Processing liquid storage container, substrate processing apparatus, and substrate processing method

Abstract

To suppress generation of particles in a processing liquid supply route.SOLUTION: The present invention relates to a processing liquid container for containing processing liquid, the processing liquid including: a container body for storing the processing liquid; and a processing liquid suction unit connected to the container body. The processing liquid suction unit includes: a hollow part; a top part opening provided in a top part of the hollow part; a bottom part opening provided in a bottom part of the hollow part; a gas supply unit provided in a side part of the hollow part, the gas supply unit supplying a gas into the hollow part; and an air discharge unit provided in the side part of the hollow part, the air discharge unit discharging air in the hollow part.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a processing liquid storage container, a substrate processing apparatus, and a substrate processing method. [Background technology]

[0002] Patent Document 1 discloses a processing liquid supplying device that supplies a processing liquid to a processing object through a processing liquid supply path and a nozzle by a liquid delivery mechanism. This processing liquid supplying device includes an opening / closing valve provided in the processing liquid supply path, a flow path adjustment unit provided in the processing liquid supply path between the opening / closing valve and the nozzle for adjusting the volume by changing the cross-sectional area of ​​a part of the processing liquid supply path, and a control unit. In order to temporarily stop the discharge of the processing liquid from the nozzle, the control unit outputs a control signal to the flow path adjustment unit so that the volume of the part of the processing liquid supply path changes from a first volume to a second volume smaller than the first volume and larger than zero, and outputs a control signal to the opening / closing valve so that the processing liquid supply path is closed before the flow of the processing liquid whose discharge has stopped is resumed after the volume of the part of the processing liquid supply path is adjusted to the second volume. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2016-139665 A Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure suppresses generation of particles in a supply path of a treatment liquid. [Means for solving the problem]

[0005] One aspect of the present disclosure is a treatment liquid storage container that contains a treatment liquid, the container comprising a container body that stores the treatment liquid, and a treatment liquid suction unit connected to the container body, the treatment liquid suction unit having a hollow portion, a top opening provided at a top of the hollow portion, a bottom opening provided at a bottom of the hollow portion, a gas supply port provided at a side of the hollow portion for supplying gas into the hollow portion, and a gas exhaust port provided at the side of the hollow portion for exhausting gas from the hollow portion. The container body has another gas supply port for supplying gas into the container body, the treatment liquid suction part has a treatment liquid suction tube for suctioning the treatment liquid, and the treatment liquid suction tube is connected to the bottom opening of the hollow part and the container body. . Effect of the Invention

[0006] According to the present disclosure, generation of particles in a supply path of a treatment liquid is suppressed. [Brief description of the drawings]

[0007] [Figure 1] 1 is a side cross-sectional view that typically illustrates an outline of the configuration of a substrate processing apparatus according to an embodiment of the present invention. [Diagram 2] FIG. 2 is an explanatory diagram for explaining functions of each part constituting the substrate processing apparatus. [Diagram 3] 1 is a perspective view showing a schematic configuration of a treatment liquid storage container according to an embodiment of the present invention; [Figure 4] 4 is an explanatory diagram of a treatment liquid storage container and a gas supply mechanism. FIG. [Diagram 5] FIG. 4 is a side cross-sectional view showing a state in which a nozzle is inserted into a hollow portion. [Figure 6] FIG. 4 is a side cross-sectional view illustrating a schematic flow of gas within a hollow portion. [Figure 7] FIG. 4 is an explanatory diagram showing an example of a circulation structure for gas supplied to a hollow portion. [Figure 8] 5A to 5C are explanatory diagrams showing a method of filling a treatment liquid storage container with a treatment liquid. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] In the manufacturing process of semiconductor devices, etc., there is a process of applying a resist liquid to a substrate to form a resist pattern. In this process, for example, a semiconductor wafer (hereinafter referred to as "wafer") held by a spin chuck is rotated, and resist liquid is discharged as a processing liquid onto the center of the wafer. The resist liquid is discharged by a nozzle, and the resist liquid discharged from the nozzle is supplied from a resist container that contains the resist liquid.

[0009] Resist patterns formed on wafers are becoming finer, and in order to keep up with the further miniaturization of resist patterns, it is necessary to reduce the amount of particles that can adhere to the wafer. In conventional coating processing equipment, for example, the amount of particles has been reduced by using highly clean parts or by suppressing the generation of particles in the process of passing the resist liquid through a nozzle that ejects the resist liquid, or in the subsequent coating processing process.

[0010] However, in conventional coating processing apparatuses, valves and pumps that may generate particles are installed in the resist liquid supply path from the resist container to the nozzle, leaving room for improvement in terms of suppressing particle generation.

[0011] Therefore, the technology disclosed herein suppresses the generation of particles in the supply path of the treatment liquid.

[0012] Hereinafter, a processing liquid container, a substrate processing apparatus, and a substrate processing method according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are denoted by the same reference numerals, and duplicated descriptions will be omitted.

[0013] In describing the processing liquid storage container according to the present embodiment, a substrate processing apparatus including the processing liquid storage container will be described first. Fig. 1 is a side cross-sectional view that typically illustrates an outline of the configuration of the substrate processing apparatus according to the present embodiment.

[0014] The substrate processing apparatus in this embodiment is a resist coating apparatus 100 that coats a resist liquid as a processing liquid on a wafer W as a substrate. The resist coating apparatus 100 has a processing vessel 101, and a loading / unloading port (not shown) for the wafer W is formed on a side surface of the processing vessel 101. A spin chuck 102 as a substrate holding unit is provided inside the processing vessel 101. The spin chuck 102 holds the wafer W horizontally. The spin chuck 102 is connected to a rotating unit 103 that can be raised and lowered, and the rotating unit 103 is connected to a rotation driving unit 104 constituted by a motor or the like. Therefore, the wafer W held on the spin chuck 102 can be rotated by driving the rotation driving unit 104.

[0015] A cup 105 is disposed outside the spin chuck 102 to receive and collect the resist liquid scattered or dropped from the wafer W. An opening 106 is formed in the upper surface of the cup 105, through which the wafer W passes before and after the wafer W is transferred to and from the spin chuck 102. A drain pipe 107 and an exhaust pipe 108 are provided at the bottom of the cup 105. The exhaust pipe 108 is connected to an exhaust device 109 such as an exhaust pump.

[0016] A nozzle 110 that discharges a resist liquid toward the surface of the wafer W is disposed in the processing vessel 101. The nozzle 110 is provided on a nozzle support 111 such as an arm, and the nozzle support 111 can be moved up and down as indicated by a reciprocating arrow A shown by a dashed line in FIG. 1 and can also be moved horizontally as indicated by a reciprocating arrow B shown by a dashed line by a driving mechanism (not shown). The nozzle 110 has a configuration capable of sucking and discharging a liquid based on a control signal from a control unit 200 described later. The specific configuration of the nozzle 110 is not particularly limited as long as it is capable of sucking and discharging a liquid, and for example, a known electric micropipette can be used as the nozzle 110.

[0017] On the outside of the cup 105, there is a resist containing section 120 that contains a resist liquid, and a nozzle cleaning section 130 that cleans the nozzle 110. The resist containing section 120 and the nozzle cleaning section 130 will be described later.

[0018] The resist coating apparatus 100 includes a control unit 200. The control unit 200 is, for example, a computer including a CPU, a memory, and the like, and includes a program storage unit (not shown). The program storage unit stores programs for controlling various processes in the resist coating apparatus 100. The above programs may be recorded in a computer-readable storage medium H and installed from the storage medium H to the control unit 200. The storage medium H may be a temporary storage medium or a non-temporary storage medium. A part or all of the programs may be realized by dedicated hardware (circuit board).

[0019] 2 is an explanatory diagram for explaining the function of each part constituting the resist coating apparatus 100. The nozzle 110 is movable between the resist storage part 120, above the wafer W held by the spin chuck 102 (not shown in FIG. 2), and the nozzle cleaning part 130.

[0020] The resist containing section 120 includes a plurality of resist containing containers 1 (hereinafter, sometimes referred to as "containers 1") as processing liquid containing containers. Each container 1 may contain, for example, different types of resist liquid or the same type of resist liquid. Alternatively, each container 1 may contain a solvent such as a thinner used in a pre-wetting process of the wafer W. The type of processing liquid contained in the container 1 and the number of containers 1 are appropriately changed depending on the processing contents performed in the substrate processing apparatus.

[0021] The nozzle cleaning unit 130 includes a cleaning liquid spraying unit 131 that sprays a cleaning liquid onto the surface of the nozzle 110, a cleaning liquid storage unit 132 that stores the cleaning liquid, and a gas spraying unit 133 that sprays a gas onto the surface of the nozzle 110. The nozzle 110 moves to the nozzle cleaning unit 130 at a predetermined timing, for example, when changing the type of resist liquid to be discharged onto the wafer W, and is cleaned by moving in order between the cleaning liquid spraying unit 131, the cleaning liquid storage unit 132, and the gas spraying unit 133. Note that if cleaning of the nozzle 110 is not necessary, the nozzle cleaning unit 130 does not need to be provided.

[0022] In the cleaning liquid spraying section 131, a cleaning liquid such as pure water is sprayed onto the surface of the nozzle 110, thereby removing the resist liquid adhering to the surface of the nozzle 110.

[0023] In the cleaning liquid storage section 132, the nozzle 110 is immersed in a cleaning liquid such as pure water, and the inside of the nozzle 110 is cleaned by repeatedly suctioning the resist liquid and discharging it to a predetermined discharge location. The predetermined discharge location may be within the cleaning liquid storage section 132 or may be a dedicated discharge location (not shown).

[0024] In the gas blowing section 133, a gas such as air is blown onto the surface of the nozzle 110 to dry the surface of the nozzle 110.

[0025] Note that the specific configurations of the cleaning liquid spraying section 131, the cleaning liquid storage section 132, and the gas spraying section 133 are not particularly limited. For example, since gas is supplied into the hollow section 21 of the resist suction section 20 as described later, the surface of the nozzle 110 may be dried by supplying gas into the hollow section 21 with the nozzle 110 inserted into the hollow section 21. In this case, the hollow section 21 also functions as the gas spraying section 133. Also, for example, the cleaning liquid spraying section 131 may not be provided, and the surface of the nozzle 110 may be cleaned by the cleaning liquid storage section 132.

[0026] Next, an outline of the configuration of the container 1 will be described. Fig. 3 is a perspective view showing a schematic outline of the configuration of the container 1 according to this embodiment. Fig. 4 is an explanatory diagram of the container 1 and a mechanism for supplying gas to the container 1.

[0027] The container 1 includes a container body 10 for storing a resist liquid, and a resist suction part 20 connected to the container body 10.

[0028] The container body 10 is formed of, for example, a glass bottle, and a gas supply port 11 for supplying gas to the container body 10 is formed on the upper surface. One end of a gas supply pipe 140 is connected to the gas supply port 11, and the other end of the gas supply pipe 140 is connected to a gas supply unit 141 that supplies an inert gas such as nitrogen gas or argon gas. In addition, a gas filter 142 is provided in the gas supply pipe 140, and impurities in the gas flowing through the gas supply pipe 140 are removed by this gas filter 142. The flow rate of the gas flowing through the gas supply pipe 140 is adjusted by controlling the gas supply unit 141 by the control unit 200 (FIG. 1). The configuration of the supply mechanism for the gas supplied to the container body 10 is not limited to the configuration described in this embodiment, and may be any configuration that can supply a predetermined gas to the gas supply port 11.

[0029] The resist suction part 20 has a hollow part 21 which is a hollow spherical body. The hollow part 21 has a top opening 22 formed at the top of the hollow part 21 and a bottom opening 23 formed at the bottom of the hollow part 21. The top opening 22 and the bottom opening 23 may have any size as long as the nozzle 110 can pass through them. The shape of the hollow part 21 is not limited to being a sphere, but in order to suppress the generation of turbulence in the hollow part 21 when supplying gas into the hollow part 21 as described later, it is preferable that the shape of the hollow part 21 is a sphere.

[0030] The hollow portion 21 has a gas supply port 24 for supplying gas into the hollow portion 21, and a gas exhaust port 25 for exhausting the gas inside the hollow portion 21. The gas supply port 24 and the gas exhaust port 25 are each formed on a side portion of the hollow portion 21. From the viewpoint of suppressing the generation of turbulence inside the hollow portion 21, it is preferable that the gas exhaust port 25 is formed at a position opposite the gas supply port 24.

[0031] One end of a gas supply pipe 150 is connected to the gas supply port 24, and the other end of the gas supply pipe 150 is connected to a gas supply unit 151 that supplies an inert gas such as nitrogen gas or argon gas. The gas supply pipe 150 is also provided with a gas filter 152, which removes impurities from the gas flowing through the gas supply pipe 150. The flow rate of the gas flowing through the gas supply pipe 150 is adjusted by controlling the gas supply unit 151 with the control unit 200 (FIG. 1). The gas exhaust port 25 is connected to a gas exhaust pipe 153 through which the gas supplied into the hollow portion 21 is exhausted.

[0032] A resist suction pipe 29 provided for sucking the resist liquid is connected to the bottom opening 23 of the hollow portion 21. The resist suction pipe 29 extends downward from the bottom opening 23 of the hollow portion 21 and is connected to the lower part of the container body 10. In this embodiment, the resist suction pipe 29 is connected between the bottom opening 23 and the bottom surface 10a of the container body 10.

[0033] The resist suction pipe 29 is provided with a resist filter 30, which removes impurities from the resist liquid passing through the resist suction pipe 29. Note that if the cleanliness of the resist liquid stored in the container body 10 is sufficiently high for use as a resist liquid to be applied to the wafer W, the resist filter 30 does not need to be provided.

[0034] A liquid level sensor 40 for detecting the liquid level of the resist liquid in the resist suction pipe 29 is provided between the hollow portion 21 and the resist filter 30. Note that the specific configuration of the liquid level sensor 40 is not particularly limited as long as it is possible to detect the liquid level.

[0035] A pressure sensor 50 is provided in the hollow portion 21 to detect the pressure inside the hollow portion 21. Note that the specific configuration of the pressure sensor 50 is not particularly limited as long as it is capable of detecting pressure.

[0036] As shown in FIG. 5, in the container 1 having the above-mentioned configuration, a top opening 22 and a bottom opening 23 are formed in the hollow portion 21, so that a nozzle 110 can be inserted into the hollow portion 21 to suck up the resist liquid from a resist suction pipe 29.

[0037] However, if the hollow portion 21 is not provided, there is a concern that particles may enter from the upper end of the resist suction pipe 29, and the cleanliness of the resist liquid in the resist suction pipe 29 and the container body 10 may decrease. On the other hand, in the container 1 according to the present embodiment, gas is supplied from the gas supply unit 151 shown in FIG. 4, and a gas flow as shown by the arrows in FIG. 6 is formed in the hollow portion 21. Therefore, particles that may enter from the top opening 22 of the hollow portion 21 are discharged from the gas exhaust port 25 by the gas flow generated in the hollow portion 21 before reaching the bottom opening 23. This makes it possible to prevent particles from entering the resist liquid in the resist suction pipe 29, and to maintain the cleanliness of the resist liquid.

[0038] In the container 1 in which gas is supplied to the hollow portion 21, the pressure inside the hollow portion 21 can be adjusted by adjusting the flow rate of the gas supplied into the hollow portion 21. The pressure inside the hollow portion 21 is preferably higher than atmospheric pressure, which can suppress volatilization of the resist liquid.

[0039] The pressure adjustment inside hollow portion 21 is preferably performed by controlling the amount of gas supplied to hollow portion 21 based on the pressure value inside hollow portion 21 measured by pressure sensor 50 (FIG. 4). For example, when the pressure inside hollow portion 21 becomes equal to or lower than atmospheric pressure, gas supply unit 151 is controlled so as to increase the amount of gas supplied into hollow portion 21, thereby making it possible to stably obtain the effect of suppressing volatilization of the resist liquid.

[0040] Furthermore, when the resist liquid in the resist suction tube 29 is sucked, the liquid level of the resist liquid in the resist suction tube 29 drops, but in the container 1 of this embodiment, the liquid level can be adjusted by supplying gas from the gas supply port 11 (FIG. 4) of the container body 10. If the liquid level of the resist liquid is maintained at a constant height, it is possible to keep the lower end position of the nozzle 110, which is lowered when sucking the resist liquid, constant. This makes it unnecessary to adjust the amount of descent of the nozzle 110 according to the liquid level of the resist liquid, and makes it possible to simplify the movement control of the nozzle 110.

[0041] The liquid level is preferably adjusted by supplying gas to the container body 10 based on the liquid level in the resist suction pipe 29 detected by the liquid level sensor 40. For example, when the liquid level sensor 40 detects a drop in the liquid level of the resist liquid, the gas supply unit 141 is controlled to supply gas to the container body 10, thereby automatically raising the liquid level to a predetermined height.

[0042] The resist container 1 in this embodiment is configured as described above. The gas supply mechanism to the container body 10 and the gas supply mechanism to the hollow portion 21 are not limited to the configurations described in this embodiment. For example, as shown in Fig. 7, the gas supply mechanism to the hollow portion 21 may be a circulation structure that supplies gas discharged from the hollow portion 21 back to the hollow portion 21. In the example shown in Fig. 7, a gas supply pipe 150 and a gas discharge pipe 153 are connected via a gas supply unit 151 such as a blower to configure a circulation pipe.

[0043] Next, a method of filling the container body 10 with resist liquid that is not filled with resist liquid will be described. Fig. 8 is an explanatory diagram of the resist filling method.

[0044] 8(a), for example, nitrogen gas is supplied to the gas supply pipe 140 of the container body 10. At this time, the nitrogen gas supplied to the container body 10 passes through the resist suction pipe 29 and is discharged from the upper end of the resist suction pipe 29. By continuing to supply nitrogen gas here, the internal atmosphere of the container body 10 and the resist suction pipe 29 is replaced with nitrogen gas, and oxygen, carbon dioxide, moisture, and the like in the container body 10 are removed.

[0045] 8(b), resist liquid is injected into the upper end of the resist suction pipe 29. At this time, the supply of nitrogen gas to the gas supply pipe 140 is stopped, and the nitrogen gas in the container body 10 is exhausted using, for example, an exhaust pump (not shown). As a result, the resist liquid flows into the container body 10 from the bottom surface 10a of the container body 10 to which the resist suction pipe 29 is connected. Then, after a predetermined amount of resist liquid is stored in the container body 10, the injection of the resist liquid into the upper end of the resist suction pipe 29 is stopped. This completes the filling of the container body 10 with the resist liquid.

[0046] 8(c), the hollow section 21, the gas supply pipe 150, and the gas exhaust pipe 153 are attached to the resist suction pipe 29 to configure the container 1 and the gas supply mechanism as shown in Fig. 4. The container 1 in this state is placed in the processing container 101 of the resist coating apparatus 100, whereby preparations for performing the resist coating process on the wafer W are completed.

[0047] Next, a resist coating method using the resist coating apparatus 100 will be described.

[0048] First, the wafer W is placed on the spin chuck 102. Next, the nozzle 110 is moved to the resist accommodation section 120, and the nozzle 110 is inserted into the hollow section 21, as shown in Fig. 5. Then, the nozzle 110 is lowered until the lower end of the nozzle 110 is immersed in the resist liquid in the resist suction pipe 29, and then the resist liquid is sucked by the nozzle 110. Thereafter, the nozzle 110 is raised to the outside of the hollow section 21.

[0049] In the process of sucking the resist liquid, gas such as nitrogen gas or argon gas is supplied to hollow portion 21, so that particles that may enter from top opening 22 of hollow portion 21 are discharged from gas exhaust port 25 before reaching bottom opening 23. Also, when nozzle 110 is inserted into hollow portion 21, gas continues to be supplied into hollow portion 21, so that particles adhering to nozzle 110 are blown away, making it possible to reduce the amount of particles.

[0050] In addition, in the process of sucking the resist liquid, the resist liquid is sucked by the nozzle 110, thereby lowering the liquid level of the resist liquid in the resist suction pipe 29. In the container body 10 filled with the resist liquid, the supply of gas to the container body 10 is stopped, but when the liquid level sensor 40 detects a drop in the liquid level, gas is automatically supplied to the container body 10 so that the liquid level rises to a predetermined height. In other words, the liquid level that has dropped after the nozzle 110 sucks the resist liquid automatically rises to the initial liquid level.

[0051] Next, the nozzle 110 is moved above the wafer W to discharge the resist liquid onto the center of the wafer W held on the spin chuck 102, and a resist film is formed on the wafer W by rotating the spin chuck 102.

[0052] Thereafter, if necessary, the nozzle 110 is moved to the nozzle cleaning unit 130 and the nozzle 110 is cleaned.

[0053] Through the above steps, the resist coating process for the wafer W is completed.

[0054] In a conventional resist coating apparatus, a resist supply pipe is connected to the nozzle to supply resist liquid to the nozzle, and a valve, a pump, etc., which may generate particles, are installed in the supply path of the resist liquid. On the other hand, in the resist coating apparatus 100 according to the present embodiment, a nozzle 110 capable of sucking and discharging the resist liquid is used, and the resist liquid contained in the resist container 1 is sucked by the nozzle 110, so that the resist liquid can be discharged onto the wafer W.

[0055] That is, the resist coating apparatus 100 according to the present embodiment has a different basic structure of a mechanism for supplying resist liquid to a nozzle from that of a conventional resist coating apparatus, and does not require components such as valves and pumps that are used in the supply path of resist liquid in a conventional resist coating apparatus. Therefore, by using the resist container 1 when performing resist coating processing on the wafer W, it is possible to suppress the generation of particles in the supply path of the resist liquid, and the cleanliness of the resist liquid can be improved compared to conventional methods.

[0056] In this embodiment, the resist coating apparatus 100 is provided with one nozzle 110, but the resist coating apparatus 100 may have a plurality of nozzles 110. For example, two nozzles 110 and two spin chucks 102 may be provided in the processing vessel 101, and one nozzle 110 may be assigned to one spin chuck 102 to coat the wafer W with resist liquid. In the resist coating apparatus 100 having this configuration, for example, a resist accommodation unit 120 and a nozzle cleaning unit 130 are disposed between the two spin chucks 102.

[0057] In the above embodiment, the liquid level of the resist liquid in the resist suction pipe 29 is adjusted by supplying gas to the container body 10, but if the resist liquid can be sucked without adjusting the liquid level, a configuration for adjusting the liquid level is not necessary. For example, if the container body 10 is a low-height container and the lower end of the nozzle 110 can be positioned near the bottom of the container body 10 when sucking the resist liquid, the resist liquid can be sucked without adjusting the liquid level of the resist liquid in the container body 10. In this case, the container 1 is configured by connecting, for example, the bottom opening 23 of the hollow portion 21 and the gas supply port 11 of the container body 10 with a pipe or the like.

[0058] In the above embodiment, an example in which one nozzle 110 sucks and discharges the resist liquid has been described. However, for example, one nozzle 110 may suck and discharge the pre-wet liquid (organic solvent such as thinner) and the resist liquid. Specifically, a pre-wet liquid storage section (not shown) is provided near the resist storage section 120, and the nozzle 110 sucks the resist liquid from the resist storage section 120 and then sucks the pre-wet liquid from the pre-wet liquid storage section. At this time, inside the nozzle 110, a liquid layer of the resist liquid and a liquid layer of the pre-wet liquid are formed by overlapping each other, and the liquid layer of the pre-wet liquid exists on the tip side of the nozzle 110. Then, the nozzle 110 in this state is moved above the wafer W to discharge the pre-wet liquid onto the surface of the wafer W, and then the resist liquid is discharged. In this way, the nozzle 110 sequentially sucks the resist liquid, sucks the pre-wet liquid, discharges the pre-wet liquid, and discharges the resist liquid, so that the pre-wet process and the resist coating process for the wafer W can be performed continuously.

[0059] In addition, the processing liquid container and the substrate processing apparatus according to the present disclosure can be applied to processing apparatuses for processing substrates other than semiconductor wafers, for example, FPD (flat panel display) substrates.

[0060] The embodiments disclosed herein should be considered as illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0061] 1 Resist container 10 Container body 20 Resist suction unit 21 Hollow part 22 Top opening 23 Bottom opening 24 Gas supply port 25 Gas outlet 100 Resist coating device 110 Nozzle 141 Gas supply section 151 Gas supply section 200 Control section W wafer

Claims

1. A processing liquid storage container for storing a processing liquid, A container body that stores the treatment liquid; a treatment liquid suction unit connected to the container body, The processing liquid suction unit includes: A hollow portion; a top opening provided at a top of the hollow portion; a bottom opening provided at a bottom of the hollow portion; a gas supply port provided on a side of the hollow portion for supplying a gas into the hollow portion; a gas exhaust port provided on a side of the hollow portion for exhausting gas within the hollow portion; the container body has another gas supply port for supplying gas into the container body, the treatment liquid suction unit has a treatment liquid suction tube for suctioning the treatment liquid, The processing liquid suction tube is connected to the bottom opening of the hollow portion and the container body.

2. The treatment liquid storage vessel according to claim 1 , wherein the hollow portion is a spherical body.

3. The treatment liquid storage container according to claim 1 , wherein the gas exhaust port is formed at a position opposite to the gas supply port.

4. A substrate processing apparatus, comprising: a processing liquid storage container for storing a processing liquid; a gas supply unit that supplies a gas to the treatment liquid storage container; a nozzle capable of suctioning and discharging the treatment liquid; A control unit that controls the operation of the gas supply unit and the nozzle, The processing liquid storage container includes: A container body that stores the treatment liquid; a treatment liquid suction unit connected to the container body, The processing liquid suction unit includes: A hollow portion; a top opening provided at a top of the hollow portion; a bottom opening provided at a bottom of the hollow portion; a gas supply port provided on a side of the hollow portion for supplying a gas into the hollow portion; a gas exhaust port provided on a side of the hollow portion for exhausting gas within the hollow portion, The control unit is configured to execute control to supply gas to the gas supply port while passing the nozzle through the top opening and the bottom opening to aspirate the processing liquid in the container body and eject the aspirated processing liquid onto a substrate.

5. The substrate processing apparatus according to claim 4 , wherein the control unit is configured to execute control for adjusting an amount of gas supplied to the gas supply port so that a pressure in the hollow portion becomes higher than atmospheric pressure.

6. The substrate processing apparatus according to claim 4 , wherein the hollow portion is a spherical body.

7. 7. The substrate processing apparatus according to claim 4, wherein the gas exhaust port is formed at a position opposite to the gas supply port.

8. the container body has another gas supply port for supplying gas into the container body, the treatment liquid suction unit has a treatment liquid suction tube for suctioning the treatment liquid, the processing liquid suction tube is connected to the bottom opening of the hollow portion and to the container body; The substrate processing apparatus according to any one of claims 4 to 7, wherein the control unit is configured to execute control to supply gas to the other gas supply port so that the liquid level of the processing liquid in the processing liquid suction tube becomes a predetermined height.

9. a circulation pipe connecting the gas supply port and the gas exhaust port; The substrate processing apparatus according to any one of claims 4 to 8, wherein the gas supply unit is configured to supply gas to the circulation pipe.

10. A nozzle cleaning unit that cleans the nozzle is provided, The nozzle cleaning unit has a cleaning liquid storage unit that stores a cleaning liquid, The substrate processing apparatus of any one of claims 4 to 9, wherein the control unit is configured to execute control to suck the cleaning liquid in the cleaning liquid storage unit with the nozzle and to discharge the sucked cleaning liquid to a predetermined discharge location.

11. The substrate processing apparatus according to claim 10 , wherein the nozzle cleaning unit includes a cleaning liquid spraying unit that sprays a cleaning liquid onto a surface of the nozzle.

12. The substrate processing apparatus according to claim 10 , wherein the nozzle cleaning unit has a gas blowing unit that blows gas onto a surface of the nozzle.

13. A method for processing a substrate, comprising: A container body for storing a processing liquid; a treatment liquid suction unit connected to the container body, The processing liquid suction unit has a hollow portion and a top opening provided at a top of the hollow portion; a bottom opening provided at a bottom of the hollow portion; a gas supply port provided on a side of the hollow portion for supplying a gas into the hollow portion; a gas exhaust port provided on a side portion of the hollow portion for exhausting gas within the hollow portion; a step of passing a nozzle capable of sucking and discharging the treatment liquid through the top opening and the bottom opening while supplying gas to the gas supply port, thereby sucking the treatment liquid in the container body; and discharging the sucked processing liquid onto the substrate.

14. 14. The substrate processing method according to claim 13, wherein in the step of sucking the processing liquid, an amount of gas supplied to the gas supply port is adjusted so that a pressure in the hollow portion becomes higher than atmospheric pressure.

15. The substrate processing method according to claim 13 or 14, wherein the hollow portion is a spherical body.

16. The substrate processing method according to any one of claims 13 to 15, wherein the gas exhaust port is formed at a position opposite to the gas supply port.

17. the treatment liquid suction unit has a treatment liquid suction tube for suctioning the treatment liquid, the processing liquid suction tube is connected to the bottom opening of the hollow portion and to the container body; The substrate processing method according to any one of claims 13 to 16, wherein in the step of suctioning the processing liquid, a gas is supplied to the container body so that a liquid level of the processing liquid in the processing liquid suction tube is kept constant.

18. 18. The substrate processing method according to claim 13, wherein in the step of sucking the processing liquid, the gas in the hollow portion discharged from the gas exhaust port is supplied to the gas supply port, thereby circulating the gas to be supplied into the hollow portion.

19. The substrate processing method according to any one of claims 13 to 18, further comprising a nozzle cleaning step of cleaning the nozzle by sucking a cleaning liquid through the nozzle and discharging the sucked cleaning liquid to a predetermined discharge location.

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