Substrate processing apparatus and substrate processing method

Abstract

To prevent a film from coming around to a front surface of a substrate when forming a friction-reducing film on a back surface of the substrate.SOLUTION: A substrate processing apparatus for forming a friction reduction film on a rear surface of a substrate includes: a processing vessel that accommodates the substrate and forms a sealed processing space; a heating unit that heats the rear surface of the substrate in the processing vessel; a supply unit that supplies a material for forming the friction reduction film toward the rear surface of the substrate in the processing vessel; a first gas supply unit that supplies an inert gas to a peripheral portion of the substrate from above the substrate in the processing vessel; a second gas supply unit that supplies an inert gas to a portion closer to the center of the substrate than the first gas supply unit from above the substrate in the processing vessel; and an exhaust unit that exhausts the atmosphere of the processing space from around or below the substrate in the processing vessel.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 describes a substrate processing apparatus that applies a coating liquid to the surface of a substrate and develops an exposed coating film on the surface of the substrate. Before the exposure process, the substrate processing apparatus includes a film forming unit that forms a friction reducing film on the back surface of the substrate to reduce the friction between the back surface of the substrate and the holding surface that holds the back surface of the substrate during the exposure process.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure suppresses the intrusion onto the substrate surface when forming a friction reducing film on the back surface of the substrate.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a substrate processing apparatus that forms a friction reducing film on the back surface of a substrate, including a processing container that houses the substrate and forms a sealed processing space, a heating unit inside the processing container, a supply unit that supplies a material for forming the friction reducing film toward the back surface of the substrate inside the processing container, a first gas supply unit that supplies an inert gas from above the substrate inside the processing container to the peripheral edge of the substrate, and a second gas supply unit that supplies an inert gas from above the substrate inside the processing container to the center side of the substrate closer to the substrate than the first gas supply unit. Heat the substrate And an exhaust unit that exhausts the atmosphere of the processing space. It is provided on the peripheral wall portion which is a part of the processing container, An exhaust port An exhaust port is provided.

Advantages of the Invention

[0006] According to the present disclosure, the technology according to the present disclosure can suppress the intrusion onto the substrate surface when forming a friction reduction film on the back surface of the substrate.

Brief Description of the Drawings

[0007]

Figure 1

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Figure 9

Embodiments for Carrying Out the Invention

[0008] For example, in the manufacturing process of a semiconductor device with a multilayer wiring structure, a photolithography process for forming a resist pattern is performed multiple times on, for example, a semiconductor wafer (hereinafter sometimes simply referred to as "wafer") as a substrate. In the photolithography process, a resist coating process for applying a resist solution onto the wafer to form a resist film, an exposure process for exposing the resist film to a predetermined pattern, a development process for developing the exposed resist film, etc. are performed, and a predetermined resist pattern is formed on the wafer.

[0009] Between each photolithography process, the exposure process is performed so that shots are made in the same area of the wafer. And due to the miniaturization of the resist pattern accompanying the further high integration of semiconductor devices in recent years, it is required to increase the alignment accuracy between the area where shots are made in the previous photolithography process and the area where shots are made in the subsequent photolithography process, that is, the accuracy of overlay (superposition).

[0010] Therefore, as disclosed in Patent Document 1, it has been proposed to improve the overlay by coating a friction reduction film on the back surface of the wafer to relieve the adsorption distortion when the wafer is chucked on the stage of the exposure machine.

[0011] When coating the friction reduction film on the back surface of the wafer, while evacuating the inside of the processing container from the peripheral part etc. of the wafer accommodated in the processing container, a raw material gas or vapor is supplied to the center of the back surface of the wafer.

[0012] In this case, the raw material gas or vapor supplied to the back surface side of the wafer may circulate from the peripheral edge of the wafer to the surface. In particular, when the distance between the back surface of the wafer and the raw material gas or vapor is narrowed to improve the coating efficiency, this tendency is more likely to occur. If the raw material of this type of friction reduction film, for example, a fluorine-based resin film, circulates from the peripheral edge of the wafer to the surface, it may affect the wettability of the coating film (for example, SOC or resist film) on the wafer surface and may also affect the EBR process.

[0013] Therefore, the technology according to the present disclosure suppresses the intrusion of these materials from the peripheral edge to the surface of the wafer while exhausting the inside of the processing container from the periphery and below of the wafer accommodated in the processing container, and supplying vapor or gas that becomes a material for the friction reduction film to the back surface of the wafer.

[0014] Hereinafter, the configuration of the substrate processing apparatus according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0015] FIG. 1 is a side view schematically showing the outline of the configuration of a substrate processing apparatus 1 according to the present embodiment. The substrate processing apparatus 1 includes a lower member 2 and an upper member 3 that constitute a processing container C. The lower member 2 includes a disk-shaped hot plate 20 having a radius larger than the radius of a wafer W that is a substrate, and a flat cylindrical outer package portion 21 that surrounds the upper surface of the hot plate 20.

[0016] A heater 22 composed of a resistive heating element forming a heating portion is provided in the hot plate 20. The heater 22 is, for example, divided into a plurality of concentric circles centered on the center of the hot plate 20, and is configured to be able to heat the surface of the hot plate 20 with high heat uniformity. In FIG. 1, the heater 22 is depicted as being divided into two for illustration purposes.

[0017] On the surface of the hot plate 20, a plurality of, for example, eight gap pins 23 are provided along a circle having a radius shorter than the radius of the wafer W and centered on the center of the hot plate 20. The height of each gap pin 23 is set to, for example, 1 mm from the surface of the hot plate 20. For illustration purposes, only two gap pins 23 are shown in FIG. 1.

[0018] Closer to the center than the gap pins 23 in the hot plate 20, three lifting pins 24 are provided penetrating the hot plate 20 along a circle centered on the center of the hot plate 20 in the circumferential direction. The three lifting pins 24 are connected to a lifting mechanism 26 constituted by, for example, an air cylinder via a lifting member 25. For illustration purposes, only two lifting pins 24 are shown in FIG. 1.

[0019] A flow path 31 through which a material for vapor deposition, which will be described later, flows is formed to penetrate the central portion of the hot plate 20. The tip side of the flow path 31 constitutes a discharge port 32 that opens to the central portion of the hot plate 20. That is, the outlet of the flow path 31 serves as the discharge port 32, constituting a supply section. Also, the base end side of the flow path 31 penetrates the central portion of the exterior portion 21 and is connected to a raw material supply pipe 33. The raw material supply pipe 33 is connected to a raw material supply source 35 via a valve V1, a flow rate regulator 34, and a valve V2. In the raw material supply source 35, for example, vapor or mist of HMDS is prepared. The vapor or mist of HMDS flows through the raw material supply pipe 33 by means of a carrier gas, for example, nitrogen gas. Note that since the vapor or mist of HMDS is vaporized from the liquid of HMDS by a vaporizer or generated by known techniques such as bubbling, detailed description thereof is omitted. As the material for the friction reducing film according to the present disclosure, other fluorine-based resin materials including PTFE can be used.

[0020] The upper member 3 includes a flat cylindrical lid portion 41 so as to cover the upper space of the lower member 2, and the lower surface of the peripheral wall portion 42 in the lid portion 41 is formed so as to overlap the upper surface of the exterior portion 21. The lid portion 41 is configured to be able to move up and down between a position where it overlaps the lower member 2 by an elevating mechanism 4 and a position where the wafer W is transferred between an external substrate transfer mechanism (not shown), the elevating pins 24. Then, the lower surface of the outer periphery of the peripheral wall portion 42 of the lid portion 41, that is, the lower surface outside the exhaust path 5, which will be described later, and the upper surface of the exterior portion 21 are in close contact with each other, so that a processing space S is formed between the lid portion 41 and the exterior portion 21. The upper surface inside the lid portion 41 constitutes a ceiling portion 41a.

[0021] A gas flow path 43 is formed to penetrate through the central portion of the ceiling portion 41a of the lid portion 41 and opens into a processing space S formed between the lid portion 41 and the exterior portion 21. The upper end of the gas flow path 43 is connected to a purge gas supply pipe 44, and a valve V3, a flow rate adjustment portion 45, and a purge gas supply source 46 are connected to the purge gas supply pipe 44 in this order from the downstream side. In this example, an inert gas, for example, nitrogen gas is used as the purge gas. The gas flow path 43 constitutes a second gas supply portion, and the lower end opening of the gas flow path 43 constitutes a second discharge hole 43a.

[0022] A plurality of gas flow paths 51 for supplying purge gas are provided at the peripheral portion of the ceiling portion 41a of the lid portion 41 toward the peripheral edge of the wafer W accommodated in the processing container C. The gas flow path 51 constitutes a first gas supply portion. The gas flow path 51 opens into the processing space S, and its lower end opening constitutes a first discharge hole 51a.

[0023] As shown in FIG. 2, the first discharge holes 51a are provided in an annular shape at the peripheral portion of the ceiling portion 41a. That is, in this embodiment, 360 first discharge holes 51a are provided along the circumferential direction of the wafer W placed on the gap pins 23 and accommodated in the processing container C. The diameter of the first discharge hole 51a is set to, for example, 3 mm. Furthermore, as shown in FIG. 3, the interval d between adjacent first discharge holes 51a is set to, for example, 3 mm.

[0024] The upper end portions of the respective gas flow paths 51 communicate with a header portion 52. A purge gas supply pipe 53 is connected to the header portion 52. A valve V4 and a flow rate adjustment portion 54 are provided in the purge gas supply pipe 53 and are connected to the purge gas supply source 46. The header portion 52 may be provided inside the lid portion 41.

[0025] As shown in FIG. 1, inside the peripheral wall portion 42 of the lid portion 41, a plurality of exhaust passages 5 penetrating vertically are arranged along the circumferential direction of the lid portion 41. The lower surface outside the exhaust passage 5 in the peripheral wall portion 42 is in close contact with the upper surface of the exterior portion 21 as described above, but the lower surface inside the exhaust passage 5 in the peripheral wall portion 42 is not in close contact with the upper surface of the exterior portion 21. That is, the height position of the lower surface inside the exhaust passage 5 in the peripheral wall portion 42 is higher than that of the outer lower surface. As a result, an annular exhaust port 6 communicating with the exhaust passage 5 is formed between the lower surface inside the exhaust passage 5 in the peripheral wall portion 42 and the upper surface of the exterior portion 21. The exhaust port 6 constitutes an exhaust portion.

[0026] An exhaust chamber 7 is provided annularly along the circumferential direction at the peripheral edge of the upper surface of the lid portion 41, and the exhaust passage 5 communicates with this exhaust chamber 7. A plurality of exhaust pipes 8 are connected to the exhaust chamber 7 along the circumferential direction, and the downstream end of the exhaust pipe 8 is connected to an exhaust duct (not shown) to which the exhaust passages of each section in the factory are commonly connected, for example.

[0027] The substrate processing apparatus 1 having the above configuration is controlled by a control unit 100. The control unit 100 is constituted by a computer including, for example, a CPU and a memory, and has a program storage unit (not shown). A program for controlling various processes in the substrate processing apparatus 1 is stored in the program storage unit. For example, the opening and closing of the valves V1 to V4, the elevating mechanisms 4 and 26, and the flow rate adjusting units 45 and 54 are controlled by the control unit 100 based on the program. The program may be recorded on a computer-readable storage medium H and installed from the storage medium H to the control unit 100. The program may also be installed via a network. The storage medium H may be temporary or non-temporary.

[0028] Next, a process of forming a friction reduction film on the back surface of the wafer W using the substrate processing apparatus 1 having the above configuration will be described. First, the lid portion 41 is raised to open the processing container C, and the wafer W on which the semiconductor device is formed on the front surface side is transported by a substrate transport mechanism (not shown) to the upper region of the hot plate 20 and transferred from the substrate transport mechanism to the lifting pins 24. After the substrate transport mechanism retracts outside the processing container C, the lid portion 41 is lowered to close the processing container C (the state shown in FIG. 1).

[0029] The wafer W is supported by the lifting pins 24 in a state where the distance between the back surface of the wafer W and the surface of the hot plate 20 is set to, for example, 2 mm. At this time, the wafer W is supported on the lifting pins 24 so that the center of the wafer W coincides with the center of the hot plate 20, that is, the center of the second discharge hole 43a, within a predetermined allowable range.

[0030] Then, the valves V3 and V4 are opened to supply nitrogen gas as a purge gas from the purge gas supply source 46 into the processing container C. Then, the purge gas is supplied to the peripheral portion of the wafer W from a plurality of first discharge holes 51a provided in the ceiling portion 41a of the lid portion 41 facing the wafer W, and the purge gas is supplied to the central portion of the wafer W from the second discharge hole 43a located closer to the center side than the first discharge holes 51a. On the other hand, the atmosphere in the processing space S is exhausted from the peripheral portion of the wafer W through the exhaust port 6.

[0031] In this state, when the lifting pins 24 are lowered and the wafer W is supported on the gap pins 23 as shown in FIG. 4, HMDS is deposited on the back surface of the wafer W. Since the height of the gap pins 23 is set to 1 mm from the surface of the hot plate 20 as described above, the space between the back surface of the wafer W and the hot plate 20 is narrow, and HMDS is efficiently deposited on the back surface of the wafer W.

[0032] However, if the space between the back surface of the wafer W and the hot plate 20 is narrow, the vapor of HMDS will flow around the edge of the wafer W and into the surface of the wafer W. However, in the embodiment, purge gas is supplied from a plurality of first discharge holes 51a to the peripheral edge of the wafer W, and purge gas is supplied from the second discharge holes 43a located closer to the center than the first discharge holes 51a to the center of the wafer W. Therefore, such intrusion of the HMDS vapor can be suppressed.

[0033] That is, in this embodiment, not only is purge gas supplied from the first discharge holes 51a to the peripheral edge of the wafer W, but also purge gas is supplied from the second discharge holes 43a to the center of the wafer W. Therefore, such intrusion can be effectively suppressed. More specifically, even if the supply of purge gas from the first discharge holes 51a suppresses the intrusion from the peripheral edge, depending on the supply flow rate, it cannot be denied that a slight amount of intrusion to the surface may occur. However, since purge gas is also supplied to the center of the wafer W, an air flow of the purge gas from the center side to the peripheral edge can be formed on the surface of the wafer W. Therefore, it is possible to push back the HMDS vapor trying to enter from the center side to the peripheral edge by the air flow.

[0034] Regarding the magnitude of the supply flow rate from the first discharge holes 51a and the supply flow rate from the second discharge holes 43a at that time, for example, as in this embodiment, when the interval d between the plurality of first discharge holes is 3 mm, the supply flow rate from the second discharge holes 43a may be less than the supply flow rate from the first discharge holes 51a. The reason is as follows. That is, when the mutual interval d of the first discharge holes 51a is "dense" with 3 mm or less, an air curtain is formed at the peripheral edge of the wafer W by the flow of the purge gas from each first discharge hole 51a, and the intrusion to the surface can be strongly suppressed. Therefore, even if the HMDS vapor tries to flow around and enter the center side of the wafer W, the amount is extremely small.

[0035] On the other hand, when the mutual interval d of the first discharge holes 51a exceeds 3 mm, for example, when it is 4 mm, in the case of "sparse", it is considered that the amount of the vapor of HMDS flowing into the center side of the surface of the wafer W from the gap of the purge gas supplied from the first discharge holes 51a increases. Therefore, if the supply flow rate from the second discharge holes 43a is made larger than the supply flow rate from the first discharge holes 51a, it can be appropriately dealt with.

[0036] In the present embodiment, the supply flow rate from the first discharge holes 51a and the supply flow rate from the second discharge holes 43a can be individually controlled through independent supply systems. By utilizing this, it is also possible to intentionally control the flow of HMDS from the peripheral portion to the center side of the wafer W.

[0037] That is, by controlling the supply flow rate from the first discharge holes 51a and the supply flow rate from the second discharge holes 43a, for example, by actively causing HMDS to flow into the peripheral portion of the wafer W and depositing HMDS in a desired range from the peripheral portion, it is possible to form a friction reducing film corresponding to the subsequent processing of the wafer W on the peripheral portion of the surface of the wafer W.

[0038] The results verified by the inventors actually using the substrate processing apparatus 1 according to the embodiment will be described. In the verification, since the region where HMDS is deposited is hydrophobic, water was supplied and the water repellent width at the peripheral portion at that time was measured, and this was used as the deposition width of HMDS. Then, the supply flow rate from the first discharge holes 51a was sequentially changed every 1 [L / min] in the range of 6 to 10 [L / min], and the supply flow rate from the second discharge holes 43a was also sequentially changed every 1 [L / min] in the range of 1 to 5 [L / min].

[0039] As a result, when the supply flow rates from both the first discharge hole 51a and the second discharge hole 43a are the smallest, the vapor deposition width is the largest. When the supply flow rate from the second discharge hole 43a is kept at the minimum and the supply flow rate from the first discharge hole 51a is increased, it was confirmed that the vapor deposition width decreases accordingly. Also, when the supply flow rate from the first discharge hole 51a is kept at the minimum and the supply flow rate from the second discharge hole 43a is increased, it was also confirmed that the vapor deposition width decreases accordingly. It was also confirmed that the vapor deposition width varies slightly depending on the combination of each flow rate. From these facts, it was confirmed that by controlling the supply flow rate from the first discharge hole 51a and the supply flow rate from the second discharge hole 43a, it is possible to adjust the radial length (vapor deposition width) of the wafer W where HMDS wraps around from the peripheral edge of the wafer W.

[0040] By utilizing this, not only for the purpose of forming a friction reduction film before exposure to improve the overlay accuracy during exposure, but also, for example, by controlling the vapor deposition width before the resist liquid coating process to form a friction reduction film, it is possible to realize an appropriate substrate process considering EBR and the like for the subsequent resist film formation process.

[0041] In the above-described embodiment, all the first discharge holes 51a discharge in the vertical direction to supply purge gas to the peripheral edge of the wafer W. However, as shown in FIG. 5, the flow path may be inclined so that the purge gas supplied from the first discharge hole 51a discharges obliquely outward from the center toward the peripheral edge of the wafer W.

[0042] Furthermore, in the above-described embodiment, the second discharge hole 43a was provided closer to the center side than the first discharge hole 51a that supplies purge gas to the peripheral edge of the wafer W. However, as shown in FIG. 6, a third discharge hole 61 may be further provided between the first discharge hole 51a and the second discharge hole 43a to supply purge gas to the region between the peripheral edge and the center of the wafer W. In such a case, the supply flow rate from the third discharge hole 61 is preferably set to be less than the supply flow rates from the first discharge hole 51a and the second discharge hole 43a.

[0043] In the above-described embodiment, the first discharge holes 51a were circular holes provided in a large number in an annular shape. However, from the viewpoint of forming an air curtain and suppressing the intrusion onto the surface, as shown in FIG. 7, for example, the first discharge holes 51b may be in an annular shape. In this case, since the function as an air curtain is superior to that of the above-described embodiment, the supply flow rate from the second discharge hole 43a may be less than that of the first discharge holes 51b.

[0044] Also, as shown in FIG. 8, the first discharge holes 51c may be in an arc-shaped slit form. Also in this case, by narrowing the intervals between the first discharge holes 51c, the function as an air curtain is superior to that of the above-described embodiment. Therefore, the supply flow rate from the second discharge hole 43a may be less than that of the first discharge holes 51c.

[0045] Furthermore, in all of the above examples, the second discharge hole 43a was provided at the center of the ceiling portion 41a facing the wafer W, that is, the purge gas was supplied toward the center portion of the wafer W. However, as shown in FIG. 9, the second discharge hole 43a may be provided at a position deviated from the center of the ceiling portion 41a, and the purge gas may be supplied to a position eccentric from the center of the wafer W. Also in this case, since the purge gas is supplied closer to the center portion than the first discharge holes 51a, it is possible to push back the vapor of HMDS that intrudes into the center portion toward the outer peripheral side.

[0046] For the purpose of supplying the purge gas closer to the center portion than the first discharge holes 51a as described above, the number of the second discharge holes 43a does not have to be limited to one, and two or more may be provided.

[0047] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims. Note that the following configurations belong to the technical scope of the present disclosure. (1) A substrate processing apparatus that forms a friction reduction film on the back surface of a substrate, A processing container that houses the substrate and forms a sealed processing space, inside the processing container, Heat the substrate a heating unit, a supply unit that supplies a material for forming the friction reduction film toward the back surface of the substrate inside the processing container, a first gas supply unit that supplies an inert gas from above the substrate in the processing container to the peripheral edge of the substrate, a second gas supply unit that supplies an inert gas from above the substrate in the processing container to the center side of the substrate rather than the first gas supply unit, It is provided on the peripheral wall portion which is a part of the processing container, exhausting the atmosphere of the processing space, Equipped with an exhaust port , a substrate processing apparatus. (2) The first gas supply unit has a plurality of first discharge holes, The plurality of first discharge holes are provided in the ceiling portion in the processing container along the circumferential direction of the substrate. The substrate processing apparatus according to (1). (3) The first gas supply unit has one or more slit holes, The slit holes are provided in the ceiling portion in the processing container along the circumferential direction of the substrate. The substrate processing apparatus according to (1). (4) The interval between the plurality of first discharge holes of the first gas supply unit is 3 mm or less, and the supply flow rate from the second gas supply unit is less than the supply flow rate of the first gas supply unit. The substrate processing apparatus according to (2). (5) The interval between the plurality of first discharge holes of the first gas supply unit is more than 3 mm, and the supply flow rate from the second gas supply unit is larger than the supply flow rate from the first gas supply unit. The substrate processing apparatus according to (2). (6) The supply flow rate from the second gas supply unit is less than the supply flow rate from the first gas supply unit. The substrate processing apparatus according to (3). (7) The second gas supply unit has one or more second discharge holes directed toward the center of the substrate in the ceiling portion of the processing container. The substrate processing apparatus according to any one of (1) to (6). (8) The supply flow rate from the first gas supply unit and the supply flow rate from the second gas supply unit are individually controlled. The substrate processing apparatus according to any one of (1) to (7). (9) There is no other gas supply unit between the first gas supply unit and the second gas supply unit, and the substrate processing apparatus according to any one of (1) to (8). (10) There is a third gas supply unit for supplying an inert gas to the substrate between the first gas supply unit and the second gas supply unit, and the substrate processing apparatus according to any one of (1) to (8). (11) The supply flow rate from the third gas supply unit is less than the supply flow rates from the first gas supply unit and the second gas supply unit, and the substrate processing apparatus according to (10). (12) The inert gas supplied from the first gas supply unit is discharged obliquely from the center side toward the outer side with respect to the peripheral edge of the substrate, and the substrate processing apparatus according to any one of (1) to (11). (13) A substrate processing method for forming a friction reduction film on the back surface of a substrate in a processing container, wherein the While heating the substrate material for forming the friction reduction film is supplied toward the back surface, and the substrate is exhausted from the peripheral portion of the substrate, from above the substrate toward the peripheral edge and the center of the substrate, respectively Supply an inert gas substrate processing method.

Explanation of symbols

[0048] 1 Substrate processing apparatus 2 Lower member 3 Upper member 5 Exhaust passage 6 Exhaust port 20 Hot plate 22 Heater 41 Lid portion 41a Ceiling portion 43a Second discharge hole 44, 53 Purge gas supply pipe 45, 54 Flow rate adjustment unit 46 Purge gas supply source 51a First discharge hole 100 Control unit C Processing container S Processing space V1~V4 Valve W Wafer

Claims

1. A substrate processing apparatus for forming a friction reducing film on a rear surface of a substrate, comprising: a processing vessel that accommodates the substrate and forms a sealed processing space; a heating unit that heats the substrate in the processing chamber; a supply unit that supplies a material for forming the friction reduction film toward a rear surface of the substrate in the processing chamber; a first gas supply unit that supplies an inert gas to a peripheral portion of the substrate from above the substrate in the processing chamber; a second gas supply unit that supplies an inert gas from above the substrate in the processing chamber toward a center of the substrate relative to the first gas supply unit; The substrate processing apparatus further comprises an exhaust port provided in a peripheral wall portion that is a part of the processing vessel, the exhaust port exhausting an atmosphere in the processing space.

2. The first gas supply unit has a plurality of first discharge holes, The substrate processing apparatus according to claim 1 , wherein the first discharge holes are provided in a ceiling portion of the processing vessel along a circumferential direction of the substrate.

3. The first gas supply section has one or more slit holes, The substrate processing apparatus according to claim 1 , wherein the slit hole is provided in a ceiling portion of the processing vessel along a circumferential direction of the substrate.

4. A substrate processing apparatus as described in claim 2, wherein the spacing between the multiple first discharge holes of the first gas supply section is 3 mm or less, and the supply flow rate from the second gas supply section is less than the supply flow rate of the first gas supply section.

5. A substrate processing apparatus as described in claim 2, wherein the spacing between the multiple first discharge holes of the first gas supply section is more than 3 mm, and the supply flow rate from the second gas supply section is greater than the supply flow rate from the first gas supply section.

6. The substrate processing apparatus of claim 3, wherein the supply flow rate from the second gas supply unit is less than the supply flow rate from the first gas supply unit.

7. A substrate processing apparatus as described in any one of claims 1 to 6, wherein the second gas supply section has one or more second discharge holes in the ceiling section of the processing vessel, the second discharge holes being directed toward the center of the substrate.

8. The substrate processing apparatus according to claim 1, wherein the supply flow rate from the first gas supply unit and the supply flow rate from the second gas supply unit are individually controlled.

9. The substrate processing apparatus according to claim 1, wherein no other gas supply section is provided between the first gas supply section and the second gas supply section.

10. A substrate processing apparatus as described in any one of claims 1 to 8, wherein a third gas supply section for supplying an inert gas to the substrate is provided between the first gas supply section and the second gas supply section.

11. The substrate processing apparatus of claim 10, wherein the supply flow rate from the third gas supply unit is less than the supply flow rates from the first gas supply unit and the second gas supply unit.

12. A substrate processing apparatus as described in any one of claims 1 to 11, wherein the inert gas supplied from the first gas supply unit is discharged obliquely from the center toward the outer side toward the peripheral portion of the substrate.

13. A substrate processing method for forming a friction reduction film on a back surface of a substrate in a processing vessel, comprising the steps of: While heating the substrate in the processing vessel, a material for forming the friction reduction film is supplied toward the rear surface of the substrate, and air is exhausted from a peripheral portion of the substrate; A substrate processing method comprising: supplying an inert gas from above the substrate toward a peripheral portion and a central portion of the substrate, respectively.

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