Wafer handling system

Abstract

To provide a wafer handling system.SOLUTION: A wafer handling system includes a treatment tank, a cleaning device, and a drying device. The treatment tank has a cantilever type rotation device, and a dynamic balance correction device. The cantilever type rotation device has a holding part for holding a wafer having various specification parameters, and rotating the wafer with the rotation shaft of the cantilever type rotation device as a center. The dynamic balance correction device performs dynamic balance correction corresponding to the cantilever type rotation device, on the cantilever type rotation device, and thereby the cantilever type rotation device is in a dynamic balance state when being rotated. Dynamic nozzle units of the cleaning device jet a cleaning fluid, and clean the rotated wafer. The drying device dries the rotated wafer.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a wafer handling system.

Background Art

[0002] The manufacture of semiconductors requires a considerable number of processes, and in many cases, processes such as cleaning and drying are necessary before the process is completed. However, the conventional cleaning process is slow and prone to generating waste liquid. For example, in the lithography process, if the photoresist layer is not completely cleaned and removed, the cleanliness of the subsequent process cannot be ensured. However, the conventional method mostly uses high-temperature sulfuric acid / hydrogen peroxide as a cleaning agent, and its drawback is that a large amount of waste acid is generated, which is not environmentally friendly. At present, in a certain technology, there is a test to replace the conventional photoresist remover with ozone technology, but due to the limitations of the solubility, stability, and mass transfer rate of ozone, it is difficult to efficiently remove the photoresist. In addition, semiconductor materials (such as wafers) are hard but brittle, so in processes such as cleaning and drying, problems such as defects and chips may be caused by non-uniform forces and vibration phenomena. Furthermore, as the integration degree of semiconductors becomes increasingly high, the aspect ratio of the device stack structure also becomes increasingly high, so it becomes more difficult to achieve the desired effect by the conventional cleaning process and drying process. Therefore, there is still much room for improvement in the conventional semiconductor handling technology.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The main object of the present invention is to provide a wafer handling system in which a cantilever type rotating device can rotate a wafer at a required speed, can also save members, and thus can make the inside of the processing tank cleaner.

[0004] The next object of the present invention is to provide a wafer handling system in which a cantilever type rotating device can improve the efficiency of wafer cleaning and drying by rotating the wafer obliquely, and an inclined cutoff plate can further improve the exclusion of cleaning fluid and prevent the cleaning fluid from accumulating in the processing tank.

Means for Solving the Problems

[0005] The wafer handling system according to the present invention includes a cantilever type rotating device and a dynamic balance correction device. The cantilever type rotating device includes a holding part for rotating a wafer around the rotation axis of the cantilever type rotating device by holding wafers having various specification parameters. The dynamic balance correction device performs corresponding dynamic balance correction on the cantilever type rotating device so that when the cantilever type rotating device is rotating, it has at least one processing tank in a dynamic balance state and at least one dynamic nozzle unit. The dynamic nozzle unit adjusts at least one operating parameter according to the specification parameters of the wafer, and sprays cleaning fluid onto the wafer when the cantilever type rotating device is rotating, thereby performing a cleaning process. The wafer handling system according to the present invention is characterized by at least including a drying device that performs a drying process on the wafer that has received cleaning process handling when the cantilever type rotating device is rotating.

[0006] The wafer handling system according to the present invention is characterized in that the rotation axis of the cantilever type rotating device rotates obliquely at an angle not parallel to the horizontal plane.

[0007] The wafer handling system according to the present invention is characterized in that the processing tank is provided on a platform via at least one set of vibration isolation legs, so that at least one vibration value of the processing tank is made smaller than a predetermined value.

[0008] The wafer handling system according to the present invention is characterized in that, in the dynamic balance state, when the cantilever type rotating device is rotating, the axis of the rotating shaft coincides with the center of gravity line of the cantilever type rotating device that holds the wafer.

[0009] The wafer handling system according to the present invention is characterized in that the processing tank further has a shield that surrounds the cantilever type rotating device.

[0010] The wafer handling system according to the present invention is characterized in that the inside of the shield has a cut-off plate, and the cut-off port of the cut-off plate faces in the tangential direction when the wafer rotates, thereby cutting off the cleaning fluid that has been subjected to the cleaning process on the rotating wafer.

[0011] The wafer handling system according to the present invention is characterized in that the dynamic balance correction device is provided on the holding portion and / or the rotating shaft of the cantilever type rotating device, and uses a non-contact force to perform the dynamic balance correction on the cantilever type rotating device, whereby the dynamic balance state can be maintained when the cantilever type rotating device is rotating.

[0012] The wafer handling system according to the present invention is characterized in that the dynamic balance correction device is an active magnetic bearing and is for performing the corresponding dynamic balance correction on the cantilever type rotating device.

[0013] The wafer handling system according to the present invention, wherein the dynamic balance correction device includes at least one first magnetic element and at least one second magnetic element, the first magnetic element is provided so as to surround the cantilever type rotating device, and the second magnetic element surrounds the cantilever type rotating device in a non-contact manner, and the dynamic balance correction corresponding thereto is performed on the cantilever type rotating device by a non-contact force between the first magnetic element and the second magnetic element.

[0014] The wafer handling system according to the present invention, wherein the dynamic balance correction device is a center of gravity adjustment structure provided in the cantilever type rotating device, and is for correcting the degree of coincidence between the center of gravity line of the cantilever type rotating device holding the wafer and the axis of the rotating shaft.

[0015] The wafer handling system according to the present invention, wherein the center of gravity adjustment structure performs the corresponding dynamic balance correction on the cantilever type rotating device by turning, expanding and contracting, and moving.

[0016] The wafer handling system according to the present invention, wherein the dynamic balance correction device is at least one wafer bracket of the holding portion of the cantilever type rotating device, and the wafer bracket has a non-uniform cross-sectional area along the axial direction of the rotating shaft.

[0017] The wafer handling system according to the present invention, wherein the cleaning fluid is a cleaning liquid and / or high-temperature steam.

[0018] The wafer handling system according to the present invention further includes a microwave generation unit, and the microwave generation unit generates microwaves to heat some or all of the cleaning liquid to become the high-temperature steam.

[0019] The wafer handling system according to the present invention further comprises at least one auxiliary gas supply source, and the auxiliary gas supply source supplies at least one auxiliary gas to the processing tank.

[0020] In the wafer handling system according to the present invention, the cleaning fluid contains an aqueous solution and / or high-temperature steam, and the auxiliary gas is ozone. The cleaning fluid reacts with the auxiliary gas to form an aqueous ozone solution, and the wafer is cleaned thereby.

[0021] In the wafer handling system according to the present invention, the auxiliary gas is high-temperature nitrogen gas, and the drying of the wafer is assisted thereby.

[0022] In the wafer handling system according to the present invention, the drying device comprises a heat energy supply unit and / or a gas discharge unit. The heat energy supply unit supplies heat energy to the processing tank in the drying process, and the gas discharge unit accelerates the drying of the wafer by making the pressure in the processing tank lower than 1 atm in the drying process.

[0023] In the wafer handling system according to the present invention, the specification parameters of the wafer are selected from the group consisting of quantity, weight, position, and dimension, and the operating parameters of the dynamic nozzle unit are selected from the group consisting of the injection direction of the dynamic nozzle unit, the quantity of the dynamic nozzle unit, the flow rate of the cleaning fluid, the speed of the reciprocating motion of the dynamic nozzle unit, and the cleaning time.

[0024] In the wafer handling system according to the present invention, there are a plurality of dynamic nozzle units, which cooperate with each other to clean the wafer.

[0025] The wafer handling system according to the present invention is characterized in that the dynamic nozzle unit sprays the cleaning fluid onto the wafer in a scanning manner to clean the wafer.

[0026] The wafer handling system according to the present invention is characterized in that one side of the cantilever type rotating device is a support end and the other side is a free end, and the wafer is detachably placed on the holding portion of the cantilever type rotating device via the free end.

[0027] The wafer handling system according to the present invention is characterized in that the dynamic balance correction device performs the corresponding dynamic balance correction on the cantilever type rotating device according to the specification parameters of the wafer, the operating parameters of the dynamic nozzle unit, the rotation speed and / or the vibration state of the rotating shaft.

Effects of the Invention

[0028] The wafer handling system according to the present invention has the following effects. (1) The cantilever type rotating device can rotate the wafer at a required speed and can also save components, so that the inside of the processing tank can be made cleaner.

[0029] (2) By rotating the wafer obliquely, the cantilever type rotating device can improve the cleaning and drying efficiency of the wafer. The inclined cutoff plate further improves the exclusion of the cleaning fluid and can prevent the cleaning fluid from accumulating in the processing tank.

[0030] (3) The dynamic balance correction device can keep the cantilever type rotating device holding the rotating wafer having various specification parameters in a dynamic balance state.

[0031] When performing the cleaning process with the dynamic nozzle unit, the operating parameters can be adjusted according to the specification parameters of the wafer, thereby saving the usage amount of the cleaning fluid and obtaining a better cleaning effect more quickly.

[0032] (5) The auxiliary gas from the auxiliary gas supply source can assist in cleaning the wafer and can also assist in drying the wafer.

[0033] (6) The drying device has a heat energy supply unit for raising the temperature in the processing tank and a gas discharge unit for reducing the air pressure in the processing tank. Thereby, the drying of the wafer can be accelerated.

[0034] (7) By using the anti-vibration feet made of hard materials, the vibration value can be effectively reduced.

[0035] (8) By adopting the vapor ozone stripping (VOS) technology, the effect of cleaning and removing the photoresist can be improved, and the impact on the environment, health, and safety can also be significantly reduced.

[0036] To deepen the understanding of the technical features and achievable technical effects of the present invention, better embodiments and detailed descriptions are shown below.

Brief Description of the Drawings

[0037]

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Figure 8

[0038] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The ratios of the respective members in the drawings of the embodiments of the present invention are shown for easy understanding of the description and are not actual ratios. Further, the ratio of the dimensions of the assembly shown in the figure is for explaining each component and its structure, and of course, the present invention is not limited thereto. On the other hand, for convenience of understanding, the same parts in the following embodiments will be described with the same reference numerals.

[0039] Furthermore, the terms used throughout the specification and the claims have their ordinary meanings in this field, the content disclosed in this specification, and the special content, unless otherwise specified. Some of the terms used to describe the present invention are described below or elsewhere in this specification to provide additional guidance to those skilled in the art regarding the description of the present invention.

[0040] The use of "first", "second", "third", etc. in this article does not specifically indicate order or sequence and is not used to limit the present invention. This is only used to distinguish components or operations described with the same technical term.

[0041] Next, when terms such as "including", "comprising", "having", "containing", etc. are used in this article, they are all open terms. That is, they mean including but not limited to this.

[0042] Refer to FIGS. 1 to 8. FIG. 1 is a front view showing the structure of the wafer handling system according to the present invention. FIG. 2 is a block diagram showing the operation of the wafer handling system according to the present invention. FIG. 3 is a side view showing a first embodiment of the wafer handling system according to the present invention. FIG. 4 is a side view showing a second embodiment of the wafer handling system according to the present invention. FIG. 5 is a side view showing a third embodiment of the wafer handling system according to the present invention. FIG. 6 is a side view showing a state where the third embodiment of the wafer handling system according to the present invention does not perform dynamic balance correction. FIG. 7 is a side view showing a fourth embodiment of the wafer handling system according to the present invention. FIG. 8 is a perspective view showing the structure of the holding part of the wafer handling system according to the present invention. In order to more clearly show the design of the structure of the present invention, FIGS. 2 to 8 show only the local structure of the present invention.

[0043] The wafer handling system 100 according to the present invention includes at least one processing tank 10, a cleaning device 40, and a drying device 60. The processing tank 10 has a cantilever type rotating device 20 and a dynamic balance correction device 30. The cantilever type rotating device 20 has a holding part 22 and a rotating shaft 24. The holding part 22 is a wafer box 90 for detachably mounting and holding a wafer 80 having each specification parameter as shown in FIGS. 2 to 8. Further, for example, as shown in FIG. 1, the wafer 80 having each specification parameter can be detachably held. The specification parameters of the wafer 80 are selected from a group composed of, for example, quantity, weight, position, and dimensions. The rotating shaft 24 rotates the holding part 22, so that the wafer 80 rotates along the rotating shaft 24 around the axis of the rotating shaft 24. For example, as shown in FIG. 1, it rotates clockwise or counterclockwise R. The rotating shaft 24 according to the present invention can rotate at each rotation speed according to actual needs, and the range of the rotation speed is, for example, from 0 rpm to about 12000 rpm, but is not limited thereto. The cleaning device 40 includes at least a fluid supply tank 43 and at least one dynamic nozzle unit 42. The fluid supply tank 43 is for storing a cleaning fluid. The dynamic nozzle unit 42 communicates with the fluid supply tank 43 and is for performing a cleaning process by spraying the cleaning fluid onto the wafer 80 when the cantilever type rotating device 20 rotates the wafer 80. The drying device 60 is for performing a drying process on the wafer 80 that has undergone the above-described cleaning process handling when the cantilever type rotating device 20 rotates the wafer 80.

[0044] After the cantilever type rotating device 20 holds wafers 80 having different quantities and weights, the position of the overall center of gravity line that was originally in a consistent state changes to different extents. Therefore, each structure (for example, the holding part 22, the rotating shaft 24, and the wafer 80) receives different degrees of centrifugal force at different positions that are at the same distance from the axis 24a of the rotating shaft 24. For this reason, the dynamic balance correction device 30 according to the present invention performs corresponding dynamic balance correction on the cantilever type rotating device 20 according to, for example, one or more of the specification parameters of the wafer 80, the operating parameters of the dynamic nozzle unit 42, the rotation speed of the rotating shaft 24, and / or the vibration state. As a result, after the cantilever type rotating device 20 holds wafers 80 having different quantities and weights, it can still be in a dynamic balance state when rotating.

[0045] The processing tank 10 forms a sealed or airtight chamber inside by having, for example, a shield 12 that surrounds the outside of the cantilever type rotating device 20. The shield 12 optionally opens and closes the chamber of the processing tank 10 by having, for example, a cover 15. When the cantilever type rotating device 20 is rotating, the processing tank 10 does not move. The cleaning device 40 and the drying device 60 are provided, for example, on the shield 12 or are located in the space between the wafer 80 and the shield 12, and perform a cleaning process and a drying process on the wafer 80, respectively. The shield 12 has, for example, a cut-off plate 14, which is located, for example, inside the shield 12 and extends upward from the bottom of the shield 12, and the cut-off opening 16 of the cut-off plate 14 faces the tangential direction when the wafer 80 is rotating, thereby cutting off the cleaning fluid (e.g., a mixed fluid such as waste liquid and / or waste gas) that has been subjected to the cleaning process on the rotating wafer 80. The cut-off plate 14 has a cross section in the shape of an arc or semicircle, and when a stop sheet is formed on the upper side, it can reduce the splash phenomenon of the cleaning fluid that occurs when cutting off the cleaning fluid, and can also prevent the cleaning fluid that has been subjected to the cleaning process from contaminating the wafer 80 being cleaned in duplicate. For this reason, in the present invention, by providing the cut-off plate 14 on the shield 12, the time required for the entire cleaning process to be performed can be shortened. Furthermore, if the cut-off plate 14 of the shield 12 is inclined (the height of the shield 12 decreases from one side to the other), i.e., if the extension direction is not parallel to the horizontal plane, a flow guiding effect can be obtained, and the cleaning fluid can be quickly and completely discharged outside the treatment tank 10 by gravity. The present invention further includes, for example, a drainage system 18, such as a pump, which is in communication with the treatment vessel 10 via an output fitting 19 (e.g., an output tube 19a and a control valve 19b) and is located on the other side lower than the cutoff plate 14.

[0046] The treatment tank 10 of the present invention is further optionally mounted on the platform 70 via at least one vibration isolating leg 72, and the shield 12 has, for example, a base 13, and at least one vibration isolating leg 72 is located between the base 13 of the shield 12 and the platform 70, so that at least one vibration value of the treatment tank 10 can be made smaller than a preset value. This preset value is about 10 mm / s. There is no limit to the number of vibration isolating legs 72, and they may be any value greater than 1 (for example, 2, 4, 6, or 8), and may be made of, for example, a hard material (for example, a metal such as stainless steel), and the stiffness coefficient (k) of the hard material is greater than, for example, about 100. In the present invention, by using the vibration damping legs 72 made of a hard material, the resonance frequency can be changed to lower the vibration value. Taking the case where the cantilever type rotating device 20 holds the wafer boxes 90 of wafers 80 each mounted with 1 to 22 GaAs materials and uses six vibration damping legs 72 as an example, when the rotational speed increases from 200 rpm to 1300 rpm, the vibration values in three directions (for example, the x-axis, y-axis, and z-axis directions, that is, two perpendicular radial directions and the axial direction perpendicular to one radial direction) obtained by the conventional metal vibration damping legs covered with rubber (rigidity coefficient is 100) increase from the original about 2 mm / s to about 6 to 25 times the vibration value respectively. However, the vibration values in the three directions obtained by the vibration damping legs 72 made of a hard material (rigidity coefficient is 412) are all less than 6 mm / s. Furthermore, when there are 22 wafers 80, the vibration values in the three directions are all maintained in the range of about 0.3 mm / s to 1.96 mm / s. Thereby, according to the vibration damping legs 72 adopting a hard material, an effect that cannot be achieved by the prior art can be obtained. In addition, the processing tank 10 according to the present invention is one or more, and a material resistant to acids and alkalis such as stainless steel is adopted, but is not limited thereto. Taking the case where a plurality (for example, two) of processing tanks 10 are located on the same platform 70 as an example, since the two processing tanks 10 press against each other, an effect of further lowering the vibration value can be obtained. The platform 70 applicable to the present invention is not particularly limited, and may be any object on which the processing tank 10 can be installed, such as a pedestal, a frame, a workbench, or a floor surface.

[0047] The rotating shaft 24 of the cantilever type rotating device 20 according to the present invention rotates in a suspended manner with a single arm and rotates obliquely at an angle not parallel to, for example, the horizontal plane. In particular, it is suitable for the conventional wafer 80 having a high aspect ratio element stacking structure that is difficult to clean and prone to residue generation. According to the present invention, a better cleaning effect can be obtained, and the residual phenomenon of the cleaning fluid can also be improved. In one embodiment, the above angle is about 10 degrees, that is, the included angle α between the axis 24a of the rotating shaft 24 and the horizontal plane is 10 degrees. However, the present invention is not limited thereto, and the range of the above angle may be, for example, about 0 degrees to about 90 degrees. Further, the rotating shaft 24 of the cantilever type rotating device 20 according to the present invention may rotate parallel or perpendicular to the horizontal plane as required in practice, for example, as shown in FIG. 7. One of the features of the present invention is to utilize the dynamic balance correction device 30 to perform dynamic balance correction on the cantilever type rotating device 20 according to the specification parameters of the wafer 80, the flow rate of the cleaning fluid, the rotation speed of the rotating shaft 24, and / or the vibration state (for example, the vibration value in all directions). That is, as shown in FIGS. 5 and 6, the degree of coincidence between the center of gravity line 24b of the cantilever type rotating device 20 holding the wafer 80 and the axis 24a of the rotating shaft 24 is corrected so that the cantilever type rotating device 20 is in a dynamic balance state when rotating. The higher the degree of coincidence between the center of gravity line 24b and the axis 24a, the closer the centrifugal forces received at different positions on the circumference of the rotating shaft 24 are. Therefore, even if the holding portion 22 holds the wafer 80 having each specification parameter, according to the present invention, the center of gravity line 24b can be made to coincide with the axis 24a of the rotating shaft 24 by using the dynamic balance correction device 30. That is, the same structure (for example, the holding portion 22, the rotating shaft 24, and the wafer 80) can receive the same degree of centrifugal force at different positions having the same distance from the axis 24a of the rotating shaft 24. Therefore, according to the present invention, when the wafer 80 is rotating, defects or breakages caused by non-uniform forces can be reduced.

[0048] The rotating shaft 24 according to the present invention is, for example, a ball bearing or a magnetic bearing. As a result, the rotating shaft 24 is driven to rotate by, for example, a contact type driving member 29 (for example, a motor) respectively, or the rotating shaft 24 is driven by a non-contact type (for example, electromagnetic force) to rotate in the air. Taking the example that the rotating shaft 24 is a magnetic bearing driven by electromagnetic force, the rotating shaft 24 is an active magnetic bearing, a passive magnetic bearing, or a hybrid magnetic bearing (composed of an active magnetic levitation member and a passive magnetic levitation member).

[0049] The cantilever type rotating device 20 according to the present invention is a single-arm rotating mechanism, that is, one side is the support end 21a and the other side is the free end 21b. Specifically described, the cantilever type rotating device 20 includes a rotating shaft 24 and a holding portion 22. One end of the rotating shaft 24 is located at the support end 21a. One end of the holding portion 22 is connected to the other end of the rotating shaft 24, and the other end is located at the free end 21b. The holding portion 22 is configured to detachably hold a wafer 80 having each specification parameter, or to detachably hold a wafer box 90 on which the wafer 80 having each specification parameter is mounted. The holding portion 22 includes, for example, a plurality of wafer brackets 23, and connection plates 25a and 25b. The connection plates 25a and 25b are located at both ends of the wafer bracket 23 respectively, thereby constituting a housing having a positioning groove 26. Since the connection plate 25b located at the free end 21b has an opening 27 communicating with the positioning groove 26, the wafer 80 is detachably placed in the positioning groove 26 of the holding portion 22 of the cantilever type rotating device 20 through the opening 27 located at the free end 21b. The shape and dimensions of the holding portion 22 and its positioning groove 26 are not particularly limited, and as long as they can hold the wafer 80 or the wafer box 90 on which the wafer 80 is placed and can prevent loosening and falling off, all can be applied to the present invention. The wafer box 90 is, for example, a commercially available wafer box having various dimensions. The wafer 80 has various dimensions, quantities, and weights, and may employ various materials (such as Si, SiC, SiGe, Ge, GaAs, GaN, and InP, etc.), and has been handled by, for example, any semiconductor process, having various weights and element stack structures. The shape and dimensions of the positioning groove 26 of the holding portion 22 correspond to the wafer 80 and the wafer box 90 on which the wafer 80 is placed.

[0050] The dynamic balance correction device 30 for the treatment tank 10 according to the present invention is provided, for example, on the holding part 22, the rotating shaft 24, or both the holding part 22 and the rotating shaft 24 of the cantilever type rotating device 20, so as to automatically and / or manually perform dynamic balance correction on the cantilever type rotating device 20 during rotation and / or before rotation. Thus, even when the cantilever type rotating device 20 rotates, the dynamic balance state can be maintained. The number of the dynamic balance correction devices 30 is not particularly limited, and it may be one or a plurality. As long as dynamic balance correction can be performed, all of them can be applied to the present invention.

[0051] The dynamic balance correction device 30 for the treatment tank 10 according to the present invention is a component that performs dynamic balance correction on the cantilever type rotating device 20 by using a non-contact force, such as an active magnetic bearing. Taking the active magnetic bearing as an example, the dynamic balance correction device 30 is, for example, a magnetic force correction ring-shaped member including at least one first magnetic element 32a and at least one second magnetic element 32b. As shown in FIG. 3, the first magnetic element 32a is provided so as to surround the rotating shaft 24 of the cantilever type rotating device 20, or as shown in FIGS. 5 and 6, it is provided so as to surround the holding part 22. The second magnetic element 32b is provided so as to surround the cantilever type rotating device 20 without contacting it. For example, by being provided at the seal 12 or other positions, a non-contact force between the first magnetic element 32a and the second magnetic element 32b is used to perform dynamic balance correction on the cantilever type rotating device 20. The first magnetic element 32a is a magnetic component such as an iron piece or a magnet. The second magnetic element 32b is an electromagnet whose magnetic force can be adjusted, thereby constituting a radial magnetic bearing. The radial magnetic bearing according to the present invention can be classified into, for example, 3 poles, 4 poles, 8 poles, 16 poles, or others according to the type of structure. Taking 8 poles as an example, the eight magnetic poles are divided into 4 pairs to form 4 sets of independent magnetic circuits, and each pair controls two directions. The dynamic balance correction device 30 optionally includes a position sensor 33 and a controller 35. The position sensor 33 is for sensing the radial position of the cantilever type rotating device 20 in real time. The controller 35 generates a corresponding control signal based on the sensing result of the position sensor 33 and controls the magnetic poles of the radial magnetic bearing in real time, so as to perform dynamic balance correction on the cantilever type rotating device 20 until the required dynamic balance state is achieved.

[0052] In addition, the dynamic balance correction device 30 according to the present invention is, for example, a center of gravity adjustment structure 36 such as a counterweight as shown in FIG. 4. Taking the counterweight as an example, the center of gravity adjustment structure 36 is provided on the cantilever type rotating device 20, for example, in a fixed or movable manner, and, for example, by turning, stretching or moving, corresponding dynamic balance correction is performed on the cantilever type rotating device 20. For example, the counterweight is provided on the wafer bracket 23 of the holding part 22 in a fixed manner, and the wafer bracket 23 has an unequal cross-sectional area (that is, different thicknesses) along the axial direction of the rotating shaft 24, so as to obtain the effect of achieving dynamic balance correction. The counterweight is provided on the wafer bracket 23 of the holding part 22 in a movable manner, for example, and by moving or stretching on the wafer bracket 23 along the axial direction of the rotating shaft 24, the effect of achieving dynamic balance correction can be obtained. Alternatively, the counterweight is provided on the wafer bracket 23 of the holding part 22 in a rotatable manner, for example, and by being able to rotate on the wafer bracket 23, the effect of dynamic balance correction is realized by the eccentric effect. Those having ordinary knowledge in the technical field to which the present invention pertains will be able to understand how to utilize the counterweight to achieve the above-described dynamic balance correction effect, as well as the necessary matching structure and auxiliary members, based on the above disclosure of the present invention. Therefore, the description is omitted.

[0053] The cleaning device 40 according to the present invention includes at least one dynamic nozzle unit 42. The dynamic nozzle unit 42 adjusts at least one corresponding operating parameter automatically and / or manually according to at least one specification parameter of the wafer 80, for example, and sprays cleaning fluid onto the wafer 80 when the cantilever type rotating device 20 rotates the wafer 80 to perform a cleaning process. The dynamic nozzle unit 42 can reduce the amount of cleaning fluid required for the cleaning process by, for example, scanning (or reciprocating) and spraying the cleaning fluid onto the wafer 80 when the cantilever type rotating device 20 rotates the wafer 80 to perform the cleaning process. Those having ordinary knowledge in the technical field to which the present invention pertains will be able to understand how the dynamic nozzle unit 42 can achieve the above effects, as well as the necessary matching structure and auxiliary members, based on the above disclosure of the present invention. Therefore, the description is omitted. The specification parameters of the wafer 80 are selected from the group consisting of quantity, weight, position, and dimensions, and the operating parameters of the dynamic nozzle unit 42 are selected from the group consisting of the injection direction of the dynamic nozzle unit 42, the quantity of the dynamic nozzle unit 42, the flow rate of the cleaning fluid, the speed of the reciprocating motion of the dynamic nozzle unit 42, and the cleaning time. The dynamic nozzle units 42 are, for example, plural and are, for example, spaced apart from each other. These dynamic nozzle units 42 can operate independently of each other optionally or cooperate with each other to clean the wafer 80. The dynamic nozzle units 42 cooperate with each other to perform the cleaning process on one or more wafers 80 to be cleaned simultaneously, sequentially, or alternately in the same or complementary cleaning modes. Thereby, the cleaning effect can be improved and the usage amount of the cleaning fluid can be saved. The type of the cleaning fluid corresponds to the wafer 80 to be cleaned and is not limited to liquids and / or gases. Taking the example of cleaning a wafer 80 having a photoresist component, the cleaning fluid ejected from the dynamic nozzle unit 42 is, for example, a cleaning liquid (such as an aqueous solution like deionized water or ozone water) and / or high-temperature steam (such as evaporated water), or any fluid suitable for cleaning the photoresist, and furthermore, it may be a cleaning fluid corresponding to the substance to be cleaned or removed. According to the present invention, particularly for a wafer 80 having a high aspect ratio element stack structure that is difficult to clean in the conventional art and has a residue phenomenon, a better cleaning effect can be achieved, and the residue phenomenon of the cleaning fluid can also be improved. Also, those with ordinary knowledge in the technical field to which the present invention pertains should be able to understand that the operation mode of the dynamic nozzle unit 42 according to the present invention is not limited to the above content, and any operation mode can be applied to the present invention as long as it can achieve the effect of cleaning the wafer 80.

[0054] The wafer handling system 100 according to the present invention further includes, for example, an optional microwave generation unit 44. The microwave generation unit 44 generates microwaves to instantaneously heat a part or all of the cleaning liquid (such as water or ozone water) from the fluid supply tank 43 at high speed to become high-temperature steam, and the dynamic nozzle unit 42 injects the high-temperature steam onto the wafer 80. Similarly to the above, the wafer handling system 100 according to the present invention further includes, for example, an optional auxiliary gas supply source 46. The auxiliary gas supply source 46 is for supplying auxiliary gas to the processing tank 10 when performing the cleaning process and / or the drying process. The auxiliary gas supply source 46 is not limited to supplying auxiliary gas to the processing tank 10 together with the dynamic nozzle unit 42 that injects the cleaning fluid. The auxiliary gas supply source 46 may supply auxiliary gas to the processing tank 10, for example, via an independent dynamic nozzle unit 42, or supply auxiliary gas to the processing tank 10 through a general gas input port 17. As long as the auxiliary gas can be supplied to the processing tank 10, all of them can be applied to the present invention. The auxiliary gas supply source 46 according to the present invention includes, for example, an ozone supply source 46a and / or a high-temperature nitrogen gas supply source 46b. Similarly, the present invention is not limited to these, and any suitable method capable of providing the above-mentioned high-temperature steam and auxiliary gas can be applied to the present invention.

[0055] Taking the cleaning process as an example, when the wafer 80 to be cleaned has a photoresist component to be cleaned, the cleaning fluid ejected from the dynamic nozzle unit 42 is, for example, an aqueous solution and / or high-temperature steam. The auxiliary gas supply source 46 supplies an auxiliary gas such as ozone (O3) from the ozone supply source 46a, so that the cleaning fluid reacts with the auxiliary gas to immediately generate ozone water, thereby cleaning the wafer 80. During the process of injecting these aqueous solutions and / or high-temperature steam onto the rotating (for example, rotating obliquely at high speed) wafer 80, first, they collide with the auxiliary gas (ozone gas) from the auxiliary gas supply source 46 at high speed to generate ozone water capable of removing the photoresist (that is, the vapor ozone stripping (VOS) technology), and immediately contact the rotating wafer 80. Therefore, the thickness of the diffusion layer at the interface between the ozone water and the photoresist can be reduced, and the diffusion rate of the ozone water into the photoresist can also be accelerated. According to the present invention, when water and / or high-temperature steam collide with ozone gas at high pressure, the solubility of ozone can be significantly increased, thus greatly improving the low efficiency of the conventional immersion-type photoresist removal technology. According to the present invention, the concentration of ozone water can be effectively increased, and it can prevent the concentration of ozone water from decreasing during the process of washing the wafer 80 due to its low half-life and solubility. Further, the present invention is not limited thereto. For example, the dynamic nozzle unit 42 can directly inject ozone water or ozone gas into the processing tank 10, or supply ozone gas to the processing tank 10 by any other suitable method (for example, via the gas input port 17). Taking the drying process as an example, the auxiliary gas supply source 46, such as the high-temperature nitrogen gas supply source 46b, supplies an auxiliary gas such as high-temperature nitrogen gas (N2) to the processing tank 10 to assist in drying the wafer 80. Therefore, according to the present invention, by supplying auxiliary gases such as ozone and high-temperature nitrogen gas, the time required for performing the washing process and the drying process can be shortened.

[0056] The drying device 60 according to the present invention performs a drying process on the wafer 80 that has undergone the above-described washing process handling when the cantilever-type rotating device 20 rotates the wafer 80. The drying device 60 includes, for example, an optional heat energy supply unit 62 and / or a gas discharge unit 64. The heat energy supply unit 62 can accelerate the drying of the wafer 80 by supplying heat energy to the processing tank 10 in the drying process to accelerate the volatilization of the cleaning liquid in the cleaning fluid. The thermal energy supply unit 62 is, for example, an infrared (IR) light source capable of generating infrared rays, but is not limited thereto. The infrared light source supplies thermal energy to the processing tank 10 by generating infrared rays. On the other hand, when the wavelength of the infrared rays resonates with the components of the cleaning fluid and the temperature rises, the drying process can be further accelerated. That is, according to the present invention, by rotating the cantilever type rotating device 20, the cleaning fluid on the wafer 80 can be removed by centrifugal force, and further, the drying of the wafer 80 can be accelerated by thermal energy or a pressure drop. Similarly, according to the present invention, when the cleaning process is optionally performed, the cleaning process can be accelerated by supplying thermal energy to the processing tank 10 using the thermal energy supply unit 62 (for example, an infrared light source) of the drying device 60. According to the present invention, when the drying process is optionally performed, the high-temperature nitrogen gas from the high-temperature nitrogen gas supply source 46b is output using the gas input port 17, or the high-temperature nitrogen gas from the high-temperature nitrogen gas supply source 46b is ejected using the dynamic nozzle unit 42. That is, according to the present invention, by continuously introducing and discharging the high-temperature nitrogen gas, the cleaning fluid can be separated from the surface of the wafer 80 and discharged to the outside of the processing tank 10, so that the effect of drying the wafer 80 can be realized. On the other hand, since the high-temperature nitrogen gas can accelerate the decomposition of ozone and ozone water used in the cleaning process into oxygen gas and water, a clean discharge effect can be realized.

[0057] The gas discharge unit 64 of the drying device 60 according to the present invention is, for example, a gas discharge pump and communicates with the processing tank 10 via, for example, an output pipe connector 19 (for example, an output pipe 19d and a control valve 19c). However, the method of communicating the gas discharge unit 64 with the processing tank 10 is not limited to these, and as long as the atmospheric pressure in the processing tank 10 can be reduced, all can be applied to the present invention. In the present invention, when performing the drying process, the gas discharge unit 64 discharges gas from the processing tank 10, and by lowering the atmospheric pressure in the processing tank 10 until it is lower than 1 atm (760 torr), the volatilization of the cleaning liquid in the cleaning fluid can be accelerated, and the effect of accelerating drying can be realized. And for a wafer 80 having an element stack structure with a high aspect ratio that is difficult to dry conventionally, according to the drying apparatus 60 according to the present invention, the time required for performing the drying process can be shortened. There is no limit to the degree of vacuum of the gas discharge unit 64 according to the present invention, and it can handle from low vacuum to ultra-high vacuum, and as long as the drying of the wafer 80 can be accelerated, it can all be applied to the present invention.

[0058] The wafer handling system according to the present invention has the following effects. (1) The cantilever type rotating device can rotate the wafer at the required speed and can also save members, so the inside of the processing tank can be made cleaner.

[0059] (2) By rotating the wafer obliquely, the cantilever type rotating device can improve the cleaning and drying efficiency of the wafer. With the inclined cut-off plate, the exclusion of the cleaning fluid is further improved, and the accumulation of the cleaning fluid in the processing tank can be prevented.

[0060] (3) The dynamic balance correction device can keep the cantilever type rotating device holding the rotating wafer having each specification parameter in a dynamically balanced state.

[0061] (4) When performing the cleaning process by the dynamic nozzle unit, the operating parameters can be adjusted according to the specification parameters of the wafer, whereby the amount of cleaning fluid used can be saved, and the cleaning effect can be obtained earlier.

[0062] (5) The auxiliary gas from the auxiliary gas supply source can assist in cleaning the wafer and can also assist in drying the wafer.

[0063] (6) The drying device has a heat energy supply unit for raising the temperature inside the treatment tank and a gas discharge unit for lowering the air pressure in the treatment tank. Thereby, the drying of the wafer can be accelerated.

[0064] (7) By adopting vibration-damping feet made of a hard material, the vibration value can be effectively reduced.

[0065] (8) By adopting the vapor ozone stripping (VOS) technology, the effect of cleaning and removing the photoresist can be improved, and the impact on the environment, health, and safety can also be significantly reduced.

[0066] The above description is only an example and is not limiting. Any equivalent modifications or changes made without departing from the spirit and scope of the present invention are also included in the claims.

Explanation of Reference Numerals

[0067] 10 Treatment tank 12 Shield 13 Pedestal 14 Cut-off plate 15 Cover 16 Cut-off port 17 Gas input port 18 Drainage system 19 Output pipe connector 19a, 19d Output pipe 19b, 19c Control valve 20 Cantilever type rotating device 21a Support end 21b Free end 22 Holding part 23 Wafer bracket 24 Rotating shaft 24a Axis 24b Center of gravity line 25a, 25b Connection plate 26 Positioning tank 27 Opening 29 Driving member 30 Dynamic balance correction device 32a First magnetic element 32b Second magnetic element 33 Position sensor 35 Controller 36 Center-of-gravity adjustment structure 40 Cleaning device 42 Dynamic nozzle unit 43 Fluid supply tank 44 Microwave generation unit 46 Auxiliary gas supply source 46a Ozone supply source 46b High-temperature nitrogen gas supply source 60 Drying device 62 Thermal energy supply unit 64 Gas discharge unit 70 Platform 72 Anti-vibration feet 80 Wafer 90 Wafer box 100 Wafer handling system x, y, z directions R direction α included angle

Claims

1. A cantilever type rotating device and a dynamic balance correction device are provided. The cantilever type rotating device includes a holding part for holding a wafer having various specification parameters and rotating the wafer about the rotation axis of the cantilever type rotating device. The dynamic balance correction device performs corresponding dynamic balance correction on the cantilever type rotating device, so that when the cantilever type rotating device is rotating, at least one processing tank in a dynamic balance state, and at least one dynamic nozzle unit. The dynamic nozzle unit adjusts at least one operating parameter according to the specification parameters of the wafer, and sprays a cleaning fluid onto the wafer when the cantilever type rotating device is rotating, thereby performing a cleaning process. and at least a drying device for performing a drying process on the wafer that has undergone the handling of the cleaning process when the cantilever type rotating device is rotating. The rotation axis of the cantilever type rotating device rotates obliquely at an angle not parallel to the horizontal plane. In the dynamic balance state, when the cantilever type rotating device is rotating, the axis of the rotation axis coincides with the center of gravity line of the cantilever type rotating device that holds the wafer. The processing tank further has a shield surrounding the cantilever type rotating device. The inside of the shield has a cutoff plate, and the cutoff port of the cutoff plate faces the tangential direction when the wafer rotates, thereby cutting off the cleaning fluid that has performed the cleaning process on the rotating wafer. A wafer handling system.

2. The processing tank is provided on a platform through at least one set of anti-vibration feet, so that at least one vibration value of the processing tank is smaller than a predetermined value. The wafer handling system according to claim 1.

3. The dynamic balance correction device is provided on the holding part and / or the rotating shaft of the cantilever type rotating device, and performs the dynamic balance correction on the cantilever type rotating device by using a non-contact force, whereby when the cantilever type rotating device is rotating, the dynamic balance state can be maintained. The wafer handling system according to claim 1.

4. The dynamic balance correction device is an active magnetic bearing and is for performing the corresponding dynamic balance correction on the cantilever type rotating device. The wafer handling system according to claim 3.

5. The dynamic balance correction device includes at least one first magnetic element and at least one second magnetic element. The first magnetic element is provided so as to surround the cantilever type rotating device, and the second magnetic element surrounds the cantilever type rotating device in a non-contact manner, and performs the corresponding dynamic balance correction on the cantilever type rotating device by the non-contact force between the first magnetic element and the second magnetic element. The wafer handling system according to claim 3.

6. The dynamic balance correction device is a center of gravity adjustment structure provided on the cantilever type rotating device, and is for correcting the degree of coincidence between the center of gravity line of the cantilever type rotating device holding the wafer and the axis of the rotating shaft. The wafer handling system according to claim 1.

7. The center of gravity adjustment structure performs the corresponding dynamic balance correction on the cantilever type rotating device by turning, expanding / contracting, and moving. The wafer handling system according to claim 6.

8. The dynamic balance correction device is at least one wafer bracket of the holding part of the cantilever type rotating device, and the wafer bracket has a non-uniform cross-sectional area along the axial direction of the rotating shaft. The wafer handling system according to claim 1 is characterized in that.

9. The cleaning fluid is cleaning liquid and / or high-temperature steam. The wafer handling system according to claim 1 is characterized in that.

10. Furthermore, a microwave generation unit is provided. The microwave generation unit generates microwaves to heat part or all of the cleaning liquid into the high-temperature steam. The wafer handling system according to claim 9 is characterized in that.

11. Furthermore, at least one auxiliary gas supply source is provided. The auxiliary gas supply source supplies at least one auxiliary gas to the processing tank. The wafer handling system according to claim 1 or 9 is characterized in that.

12. The cleaning fluid contains aqueous solution and / or high-temperature steam, and the auxiliary gas is ozone. The cleaning fluid reacts with the auxiliary gas to form an ozone aqueous solution to clean the wafer. The wafer handling system according to claim 11 is characterized in that.

13. The auxiliary gas is high-temperature nitrogen gas to assist in drying the wafer. The wafer handling system according to claim 11 is characterized in that.

14. The drying device includes a heat energy supply unit and / or a gas discharge unit. The heat energy supply unit supplies heat energy to the processing tank in the drying process, and the gas discharge unit accelerates the drying of the wafer by making the pressure in the processing tank lower than 1 atm in the drying process. The wafer handling system according to claim 11 is characterized in that.

15. The specification parameters of the wafer are selected from the group consisting of quantity, weight, position, and dimension, and the operating parameters of the dynamic nozzle unit are selected from the group consisting of the injection direction of the dynamic nozzle unit, the quantity of the dynamic nozzle units, the flow rate of the cleaning fluid, the speed of the reciprocating motion of the dynamic nozzle unit, and the cleaning time. The wafer handling system according to claim 1 is characterized in that.

16. The wafer handling system according to claim 1, wherein there are a plurality of the dynamic nozzle units, and the dynamic nozzle units cooperate with each other to clean the wafer.

17. The wafer handling system according to claim 1, wherein the dynamic nozzle unit sprays the cleaning fluid onto the wafer in a scanning manner to clean the wafer.

18. The wafer handling system according to claim 1, wherein one side of the cantilever type rotating device is a support end and the other side is a free end, and the wafer is detachably placed on the holding part of the cantilever type rotating device via the free end.

19. The wafer handling system according to claim 1, wherein the dynamic balance correction device performs the corresponding dynamic balance correction on the cantilever type rotating device according to the specification parameters of the wafer, the operating parameters of the dynamic nozzle unit, the rotation speed and / or vibration state of the rotating shaft.

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