Method for creating a computer processor die, method and system for creating a test computer processor die (defect location marking of a high-power device through die surface contour formation)

Abstract

To solve the problem in which a solid immersion lens (SIL) is typically used for making direct surface contact with the backside of a DUT, further complicating the task of cooling the DUT for ultra-high resolution imaging using LSMs and PEMs.SOLUTION: A method of creating a computer processor die includes determining a warped shape of a computer processor die at a test temperature. The method also includes selectively contouring the thickness of the computer processor die at the contouring temperature by physically removing material from a surface of the computer processor die so that the surface is substantially flat at the test temperature.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to computer processors, and more particularly to device processing for testing processor designs.

Background Art

[0002] Conventional methods for testing and analyzing electronic devices such as microprocessors may involve image-based defect localization tools such as a laser scanning microscope (LSM) or a photon emission microscope (PEM). The use of LSM and PEM may involve operating the device under test (DUT) at its maximum frequency and output, so the DUT must be continuously cooled during the test. If the cooling is inadequate, thermal runaway may occur where the DUT temperature rises until the DUT fails.

Summary of the Invention

Problems to be Solved by the Invention

[0003] In addition to cooling, there must be an optically transparent path between the DUT and the microscope lens during the test so that the DUT can be observed. Unfortunately, such a path may prevent the use of common methods for heat removal such as thermal conductive materials and heat spreaders. Further, in the case of super high resolution imaging using LSM and PEM, generally, a solid immersion lens (SIL) is used to make direct surface contact with the back surface of the DUT, making the task of cooling the DUT even more complicated.

Means for Solving the Problems

[0004] According to one embodiment of the present disclosure, a method of creating a computer processor die includes determining the warped shape of the computer processor die at a test temperature. The method also includes selectively profiling the thickness of the computer processor die at a contouring temperature by physically removing material from the surface of the computer processor die such that the surface is substantially flat at the test temperature.

[0005] According to one embodiment of the present disclosure, a method of creating a test computer processor die includes heating the computer processor die to an initial temperature and attaching a shaping material to the computer processor die to maintain the shape of the computer processor die near the initial temperature. The method also includes selectively contouring the thickness of the computer processor die by physically removing material from the surface of the computer processor die and separating the computer processor die from the shaping material.

[0006] According to one embodiment of the present disclosure, a system includes a computer processor die, a laminate material connected to the computer processor die, a daughter card electrically connected to the computer processor die to energize the computer processor die, an immersion lens in contact with the back surface of the computer processor die, and a cooling plate in contact with the back surface of the computer processor die. The back surface of the computer processor die is substantially flat at the operating temperature of the computer processor die.

Brief Description of the Drawings

[0007]

Figure 1

[0008]

Figure 2A

Figure 2B

Figure 2C

Figure 2D

[0009]

Figure 3

[0010]

Figure 4

[0011]

Figure 5A

Figure 5B

Figure 5C

Figure 5D

[0012]

Figure 6A

Figure 6B

Figure 6C

Figure 6D

[0013]

Figure 7

DETAILED DESCRIPTION OF THE INVENTION

[0014] FIG. 1 is a side elevation view of a test device 100. In the illustrated embodiment, the test device 100 includes a die 102, a laminate 104, a pogo interposer 106, and a dot card 108. In the situation shown, since the die 102 is a microprocessor that is the DUT, the die 102 is electrically and structurally connected to the laminate 104 by a solder joint 110. The laminate 104 is electrically connected to the pogo interposer 106 by pogo pins 112, and the laminate 104 is structurally connected to the pogo interposer 106 by a clamping frame 114. Since the pogo interposer 106 is electrically and structurally connected to the dot card 108, the electrical components of the die 102 (not shown but located on the surface of the die 102 adjacent to the laminate 104) can be selectively energized by the dot card 108.

[0015] In addition, the test device 100 includes a SIL 116 that can move along the surface of the die 102 adjacent to the laminate 104 (i.e., the "back surface" or "top surface" of the die 102, although such directional designations are used merely to refer to the orientation of the components shown in the drawing). Further, the test device 100 includes a cooling plate 118 that surrounds the SIL 116 and moves with the surface of the die 102. Thereby, the die 102 can be operated, tested, observed, and cooled within the test device 100.

[0016] Figures 2A - 2D are each a pair of side elevation views (left side) and topographic maps (right side) of die 102 (DUT) at different temperatures of 25°C, 85°C, 160°C, and 220°C. These figures are highly exaggerated so that the described properties can be seen more easily. Additionally, different contour lines are used to indicate different heights to aid in understanding the topographic maps. In order from lower to higher, the line patterns are solid line, dashes only, dash - dot, dash - dot - dot, and dots only.

[0017] In the illustrated embodiment, die 102 has a constant thickness and, together with laminate 104, has a convex shape that varies, for example, by about 85 μm from the edge to the center at 25°C (e.g., when die 102 is inactive). At 85°C (e.g., when die 102 is operating normally), die 102 and laminate 104 have less convexity and vary, for example, by about 50 μm from the edge to the center. At 160°C (e.g., when die 102 is overheated), die 102 and laminate 104 are substantially flat. Die 102 may have small ripples on its back surface due to non - uniform self - heating from internal electrical activity, but the substantial planarity can be, for example, less than about 10 μm. At 220°C (e.g., when die 102 is extremely overheated), die 102 and laminate 104 have a concave shape and vary, for example, by about 20 μm from the edge to the center.

[0018] As a result, die 102 has extremely limited contact with the cooling plate 118 at 25°C, and die 102 has limited contact with the cooling plate 118 at 85°C and 220°C. Die 102 has the most extensive contact with the cooling plate 118 at 160°C. Unfortunately, this temperature may be significantly higher than the normal operating temperature of die 102 at which the test would be most beneficial. Since the available cooling is limited at 85°C, the technology that would be used in a manufacturing device may not be available to cool die 102 in the test device 100 (shown in FIG. 1), so the temperature of die 102 may rise above 85°C even under normal operating conditions. More specifically, known industry methods of cooling the DUT within the test device 100 (such as those using LSM) involve direct contact between die 102 and the cooling plate 118. However, die 102 can be very large with complex surface topography, which may cause losses in contact cooling (i.e., conduction) with the cooling plate 118. Also, self-heating within die 102 can cause dynamic thermal warping, resulting in loss of critical contact area and subsequent loss of cooling. In addition, many direct contact cooling plate solutions (such as cooling plate 118) are not designed for ultra-high power applications and do not take into account significantly non-uniform power dissipation such as that seen in large-scale multi-core server processors.

[0019] FIG. 3 is a side elevation view of an alternative die 130 that is contoured at approximately room temperature (e.g., 25°C). In the illustrated embodiment, die 130 is connected to the laminate 104 and can be at a temperature similar to that of FIG. 2A. Die 130 is cut by a tool 132 that selectively thins and contours die 130. This is shown by the fact that the thickness T2 is thinner than the original uniform thickness T1 of die 130 before contouring. Further, the edges E1 and E2 indicate the boundaries at which the contouring operation is performed, and the outside of which is left un-contoured at thickness T1.

[0020] The laminate 104 or the tool 132 or both can be fixed or moved or both (e.g., rotated or translated or both in space) by a computer numerical control (CNC) machine (not shown) to selectively contour the back surface of the die 130. The tool 132 can be any suitable local material removal device. Although the tool 132 is shown as an end mill, the tool 132 can alternatively be, for example, a ball mill, a burr (e.g., carbide or diamond), a grinding wheel, a polishing wheel, or a polishing pad. Additionally, for example, a plurality of different tools 132 can be used successively to selectively remove material and then grind a part or all of the back surface of the die 130 to a mirror finish. Thereby, the die 130 can be shaped such that it is substantially flat at its operating temperature before testing with the test device 100 (shown in FIG. 1).

[0021] FIG. 4 is a flowchart of a method 140 for contouring the die 130. In the discussion of the method 140, reference may be made to the features shown in FIGS. 1-3.

[0022] At block 142, the operating temperature of die 130 is determined. The operating temperature can be, for example, the normal operating temperature of a production processor having the same design as die 130. At block 144, the test temperature of die 130 is determined. The test temperature can be, for example, substantially the same as the operating temperature (e.g., ±10 °C), or substantially different temperatures at which die 130 is tested (e.g., to simulate startup or overheat conditions). At block 146, a precedent virtual model of die 130 without contouring is created using finite element analysis. At block 148, the precedent warpage shape of die 130 without contouring is calculated by analyzing the precedent virtual model at the test temperature. At block 150, the precedent warpage shape is virtually selectively thinned to create a subsequent virtual model that has a substantially flat back surface at the test temperature. At block 152, the subsequent warpage shape of die 130 is calculated by analyzing the subsequent virtual model at the contouring temperature (e.g., the temperature at which die 130 would be thinned at approximately room temperature). At block 154, the difference between die 130 without contouring and the subsequent warpage shape is calculated to determine the amount of material to be removed at various positions across the entire back surface of die 130.

[0023] At block 156, the unprofiled die 102 is attached to the laminate 104. At block 158, the die 102 is profiled at the profiling temperature by, for example, removing material from its back surface to create the profiled die 130 such that the die 130 conforms to the subsequent warped shape. Thereby, the die 130 comes to have the same shape as the subsequent virtual model, so that the die 130 becomes substantially flat at the test temperature. At block 160, the back surface of the die 130 is polished, for example, to a mirror finish. At block 162, the laminate 104 (having the die 130) is then fixed within the test device 100 by connecting the laminate 104 to the pogo interposer 106. Once fixed, the back surface of the die 130 is in contact with the cooling plate 118. At block 164, the die 130 is tested by energizing and operating the die 130 while observing with the SIL 116 and cooling with the cooling plate 118.

[0024] By method 140, it is possible to selectively thin the die 130 by virtually modeling the unprofiled die at a general temperature (e.g., room temperature), virtually heating the die 130, virtually modifying the die 130 to be substantially flat at a high temperature, virtually cooling the die 130, and calculating the material that would need to be removed at the general temperature. Additionally, some alternative embodiments include repeating blocks 146 - 152 one or more times as indicated by the virtual arrows. This can further improve the shape of the die 130 and enhance the contact and heat transfer between the die 130 and the cooling plate 118. In each iteration, the subsequent virtual model becomes the precedent virtual model for the next iteration.

[0025] Figures 5A-5D are each a pair of side elevation views (left side) and topographic maps (right side) of die 130 (DUT) at different temperatures of 25°C, 85°C, 160°C, and 220°C. These figures are greatly exaggerated so that the described properties can be seen more easily. Additionally, different contour lines are used to indicate different heights to aid in understanding the topographic maps. In order from lowest to highest, the line patterns are solid, dash only, dash-dot, dash-dot-dot, and dot only.

[0026] In the illustrated embodiment, die 130 has a selectively thinned thickness and, together with laminate 104, has a convex shape that varies, for example, by about 50 μm from the edge to the center at 25°C (e.g., when die 130 is inactive). At 85°C (e.g., when die 130 is operating normally), laminate 104 has less convexity and die 130 is substantially flat. Die 130 may have small ripples on its back surface due to non-uniform self-heating from internal electrical activity, but the substantial planarity can be, for example, less than about 10 μm. At 160°C (e.g., when die 130 is overheated), laminate 104 is substantially flat and die 130 has a concave shape that varies, for example, by about 40 μm from the edge to the center. At 220°C (e.g., when die 130 is extremely overheated), die 102 and laminate 104 have a concave shape that varies, for example, by about 60 μm from the edge to the center.

[0027] Since die 130 has an operating temperature of 85°C, die 130 is selectively thinned to be substantially flat at 85°C. However, if different operating temperatures are desired or predicted, method 140 can be run again using the new temperature. Thereby, die 130 can be made substantially flat at the new temperature, which is not possible with known methods such as having a die of a constant thickness (as shown in FIGS. 2A-2D) or simply flattening the die at room temperature (not shown).

[0028] Figures 6A - 6D are a series of side elevation views of die 102 that are formed on mount 172 and converted into die 170. Mount 172 includes stud 174 and shaper 176 and is connected to laminate 104. Stud 174 is a rigid plate made of, for example, steel or aluminum.

[0029] In the illustrated embodiment, shaper 176 is a material that can be formed at a relatively low temperature but is solid at room temperature. More specifically, shaper 176 can solidify, dry, or cure or a combination thereof at a temperature similar to the operating temperature of die 170 (e.g., ±10°C), so shaper 176 is solid at the contour forming temperature but can hold the shape of die 170 at or near the die's operating temperature. Thus, shaper 176 can comprise, for example, a thermosetting polymer material (e.g., resin) or a thermoplastic polymer material (e.g., wax).

[0030] To affix mount 172 to laminate 104, laminate 104 and die 170 can be heated (e.g., by the operation of die 170 or by an external source such as an oven) and placed in proximity to stud 174. Next, shaper 176 in liquid form can be injected between stud 174 and laminate 104. Next, shaper 176 solidifies, dries, or cures or a combination thereof to adhere laminate 104 to stud 174. In an alternative embodiment, shaper 176 is shaped as a solid that closely matches the shape of laminate 104 at the operating temperature of die 170. Next, shaper 176 is adhered to stud 174 and the heated laminate 104 is adhered to shaper 176. The adhesion of laminate 104 to shaper 176 can be achieved, for example, by pressing laminate 104 onto shaper 176 to locally melt the surface of shaper 176. In another example, a thin layer of adhesive (e.g., glue) (not shown) is added between shaper 176 and laminate 104 to adhere them to each other.

[0031] Referring to FIG. 6B, die 170 is cut in a planar shape by tool 178. This operation selectively thins and contours die 170 such that it is substantially flat at the operating temperature of die 170. Since die 170 is physically constrained to a shape that it would be at the operating temperature, this operation can be performed at approximately room temperature. In the illustrated embodiment, stud 174 or tool 178 or both can be fixed or moved or both (e.g., rotated or translated or both in space) by a computer numerical control (CNC) machine (not shown) to selectively contour the back surface of die 170. The tool can be any suitable local or planar material removal device. Tool 178 is shown as a grinding tool, but tool 132 can alternatively be, for example, an end mill, a fly cutter, a burr (e.g., carbide or diamond), a grinding wheel, or a polishing wheel. Additionally, a plurality of different tools 178 can be used successively, for example, to selectively remove material and then polish a part or all of the back surface of die 170 to a mirror finish.

[0032] Referring to FIG. 6C, after die 170 is contoured, mount 172 is removed from laminate 104, for example, by removing shaper 176. In some embodiments, shaper 176 is removed by a chemical process (e.g., dissolution), a thermal process (e.g., heating), or a mechanical process (e.g., cutting), or a combination thereof. After mount 172 is separated, laminate 104 and die 170 assume their natural shapes, which can be more convex at room temperature than at the test temperature.

[0033] The difference in die 170 between before and after contour formation is shown in FIG. 6D due to the thickness T3 being thinner than the thickness T1 (shown by the phantom line). Further, the edges E3 and E4 indicate the boundaries where the contour formation operation is performed, and outside of which is left unformed with the thickness T1. Thus, the contoured shape of die 170 enables the die to exhibit the same or similar behavior as die 150 (shown in FIGS. 5A - 5D).

[0034] FIG. 7 is a flowchart of an alternative method 190 for contouring die 170. In the discussion of method 190, reference may be made to the features shown in FIGS. 1, 2, 5A - 5D, and 6A - 6C.

[0035] At block 192, die 170 is attached to laminate 104. At block 194, the operating temperature of die 170 is determined. The operating temperature can be, for example, the normal operating temperature of a production processor having the same design as die 170. At block 196, the test temperature of die 170 is determined. The test temperature can be, for example, substantially the same as the operating temperature (e.g., ±10°C), or substantially different temperatures at which die 170 is tested (e.g., to simulate startup or overheat conditions).

[0036] In block 198, heat die 170 to its initial temperature, for example, by operating die 170 or by using an external heat source (e.g., an oven). The initial temperature can be the same as or similar to (e.g., ±10 °C) the operating temperature of die 170. The initial temperature can also be the same as or similar to (e.g., ±10 °C) the solidification, drying, or curing temperature of shaper 176 or any adhesive used to bond shaper 176 to laminate 104 at a temperature similar to the operating temperature of die 170 (e.g., ±10 °C) or a combination thereof. In block 200, bond laminate 104 to stud 174 and shaper 176. Block 200 can be performed, for example, by injecting liquid shaper 176 between laminate 104 and stud 174 and causing shaper 176 to solidify, dry, cure, or a combination thereof while holding die 170 at or near its operating temperature. In another example, block 200 can be performed by applying an adhesive to stud 174, shaper 176, or laminate 104, or a combination thereof, and causing the adhesive to solidify, dry, cure, or a combination thereof while maintaining die 170 at or near its operating temperature. Thereby, block 200 can include heating shaper 176 above its solidification temperature and / or mixing multiple chemical portions that dry and / or cure over time.

[0037] At block 202, after the shaper 176 has solidified, dried, cured, or both, for example, the unprofiled die 170 is profiled at the profiling temperature by removing material from its back surface such that the profiled die 170 is substantially flat. The die 170 is flattened at the profiling temperature, but since the die 170 is warped by the shaper 176, the die 170 will be substantially flat at the test temperature. At block 204, the back surface of the die 170 is polished, for example, to a mirror finish. At block 206, the mount 172 is separated from the laminate 104 by a chemical process (e.g., dissolution), a thermal process (e.g., heating), or a mechanical process (e.g., cutting), or a combination thereof, performed on the shaper 176. At block 208, the laminate 104 (having the die 170) is then secured within the test device 100 by connecting the laminate 104 to the pogo interposer 106. Once secured, the back surface of the die 170 is in contact with the cooling plate 118. At block 210, the die 170 is tested by energizing and operating the die 170 while observing with the SIL 116 and cooling with the cooling plate 118.

[0038] By method 190, it is possible to selectively thin the die 170 by bringing the die 170 to or near its operating temperature, holding the die 170 in its warped shape using the shaper 176, cooling the die 170 to the profiling temperature (e.g., room temperature), flattening the die 170, and releasing the die 170 and the laminate from the shaper 176. Thereby, method 190 can profile the die 170 and improve the contact and heat transfer between the die 170 and the cooling plate 118.

[0039] In the illustrated embodiment, since die 170 has an operating temperature of 85°C, die 170 is selectively thinned to be substantially flat at 85°C. However, if different operating temperatures are desired or predicted, different shapers 176 can be used, for example, those having different curing, drying or hardening temperatures or combinations thereof, or those having different shapes. Thereby, die 170 can be made substantially flat at the new temperature, which is impossible by known methods such as having a die of a certain thickness (as shown in FIGS. 2A-2D) or simply flattening the die at room temperature (not shown).

[0040] The description of the various embodiments of the present disclosure has been presented for purposes of illustration, but is not intended to be exclusive or to limit the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the disclosed embodiments. The terminology used herein has been selected to best explain the principles of the embodiments, the practical application, or the technical improvement found in the marketplace, or to enable those skilled in the art to understand the embodiments disclosed herein. (Other possible items) [Item 1] A method of creating a computer processor die, comprising: determining a first warpage shape of the computer processor die at a test temperature; selectively profiling the thickness of the computer processor die at a contouring temperature by physically removing material from the surface such that the surface of the computer processor die is substantially flat at the test temperature; A method comprising the steps of: [Item 2] further comprising determining an operating temperature of the computer processor die, The method according to claim 1, wherein the test temperature is within 10 ° C of the operating temperature. [Item 3] testing the computer processor die at the test temperature by operating the computer processor die; The method according to claim 1 or 2, further comprising the steps of: [Item 4] contacting the surface of the computer processor die with a cooling plate; cooling the computer processor die using the cooling plate during the test of the computer processor die; The method according to claim 3, further comprising the steps of: [Item 5] The method according to any one of claims 1 to 4, wherein the profiling of the thickness of the computer processor die is selectively performed based on the first warpage shape. [Item 6] The step of determining the first warpage shape is creating a first virtual model of the computer processor die using finite element analysis; selectively profiling the first virtual model such that a virtual surface of a second virtual model is substantially flat at the test temperature to create the second virtual model; The method according to any one of claims 1 to 5, comprising: [Item 7] determining a second warpage shape of the second virtual model at the test temperature; selectively thinning or thickening or both the second virtual model such that the virtual surface is substantially flat at the test temperature to create a third virtual model; The method according to claim 6, further comprising the steps of: [Item 8] The method according to claim 7, wherein the profiling of the thickness of the computer processor die is selectively performed based on the third virtual model. [Item 9] A method of creating a test computer processor die, comprising: heating the computer processor die to an initial temperature; adhering a shaping material to the computer processor die to maintain the shape of the computer processor die near the initial temperature; selectively profiling the thickness of the computer processor die by physically removing material from the surface of the computer processor die; separating the computer processor die from the shaping material. A method comprising the above steps. [Item 10] Further comprising the step of determining the operating temperature of the computer processor die, wherein the initial temperature is within 10 °C of the operating temperature. The method according to claim 9. [Item 11] Further comprising testing the computer processor die at a test temperature by operating the computer processor die. The method according to claim 9 or 10. [Item 12] contacting the surface of the computer processor die with a cooling plate; cooling the computer processor die using the cooling plate during the test of the computer processor die. The method according to claim 11. [Item 13] The step of adhering the shaping material to the computer processor die comprises: injecting the shaping material between a stud and the computer processor die; solidifying, drying, curing, or a combination thereof, the shaping material. The method according to any one of claims 9 to 12. [Item 14] Further comprising heating the shaping material above the solidification temperature of the shaping material. The method according to claim 13. [Item 15] The method according to claim 14, wherein the heated shaping material heats the computer processor die to the initial temperature. [Item 16] The method according to any one of claims 9 to 15, wherein the computer processor die is heated to the initial temperature by operating the computer processor die. [Item 17] The step of selectively profiling the thickness of the computer processor die by physically removing material from the surface of the computer processor die comprises the step of flattening the surface. [Item 18] The method according to any one of claims 9 to 17, wherein the step of separating the computer processor die from the shaping material comprises at least one of the group consisting of heating the shaping material and melting the shaping material. [Item 19] The method according to any one of claims 9 to 18, wherein the shaping material is wax. [Item 20] A computer processor die, A laminate material connected to the computer processor die, A daughter card electrically connected to the computer processor die for energizing the computer processor die, A solid immersion lens in contact with the back surface of the computer processor die, And a cooling plate in contact with the back surface of the computer processor die Comprising: The back surface of the computer processor die is substantially flat at the operating temperature of the computer processor die. System.

Claims

1. A method of creating a computer processor die, comprising: determining a first warpage shape of the computer processor die at a test temperature; selectively contouring the thickness of the computer processor die at a contouring temperature by physically removing material from the surface such that the surface of the computer processor die is substantially flat at the test temperature; and A method comprising the above steps.

2. further comprising determining an operating temperature of the computer processor die, The method according to claim 1, wherein the test temperature is within 10 °C of the operating temperature.

3. testing the computer processor die at the test temperature by operating the computer processor die; and The method according to claim 1 or 2, further comprising the above step.

4. contacting the surface of the computer processor die with a cooling plate; and cooling the computer processor die using the cooling plate during the test of the computer processor die. The method according to claim 3, further comprising the above steps.

5. The method according to any one of claims 1 to 4, wherein the contouring of the thickness of the computer processor die is selectively performed based on the first warpage shape.

6. The step of determining the first warpage shape comprises: creating a first virtual model of the computer processor die using finite element analysis; and creating a second virtual model by selectively contouring the first virtual model such that a virtual surface of the second virtual model is substantially flat at the test temperature. The method according to any one of claims 1 to 5, having

7. Determining a second warping shape of the second virtual model at the test temperature; Creating a third virtual model by selectively thinning or thickening or both of the second virtual model so that the virtual surface is substantially flat at the test temperature; The method according to claim 6, further comprising

8. The method according to claim 7, wherein the profiling of the thickness of the computer processor die is selectively performed based on the third virtual model.

9. The profiling temperature is room temperature. The method according to any one of claims 1 to 8.

10. A method for creating a computer processor die for testing, comprising: Heating the computer processor die to an initial temperature; Attaching a shaping material to the computer processor die to maintain the shape of the computer processor die in the warping shape near the initial temperature; Selectively profiling the thickness of the computer processor die at a profiling temperature by physically removing material from the surface of the computer processor die so that the computer processor die is substantially flat at the initial temperature; Separating the computer processor die from the shaping material; and

11. Further comprising determining an operating temperature of the computer processor die, wherein the initial temperature is within 10 °C of the operating temperature. The method according to claim 10.

12. Testing the computer processor die at a test temperature by operating the computer processor die. The method according to claim 10 or 11, further comprising **Claim 13** contacting the surface of the computer processor die with a cooling plate; during the testing of the computer processor die, using the cooling plate to cool the computer processor die; The method according to claim 12, further comprising **Claim 14** wherein the step of attaching the shaping material to the computer processor die comprises injecting the shaping material between a stud and the computer processor die; solidifying, drying, or curing the shaping material, or a combination thereof; The method according to any one of claims 10 to 13, having **Claim 15** heating the shaping material above the solidification temperature of the shaping material; The method according to claim 14, further comprising **Claim 16** The method according to claim 15, wherein the heated shaping material heats the computer processor die to the initial temperature. **Claim 17** The method according to any one of claims 10 to 16, wherein the computer processor die is heated to the initial temperature by operating the computer processor die. **Claim 18** The method according to any one of claims 10 to 17, wherein the step of separating the computer processor die from the shaping material comprises at least one of heating the shaping material and dissolving the shaping material. **Claim 19** The method according to any one of claims 10 to 18, wherein the shaping material is wax. **Claim 20** a computer processor die; A laminate material connected to the computer processor die, A daughter card electrically connected to the computer processor die for energizing the computer processor die, An immersion lens in contact with the back surface of the computer processor die, A cooling plate in contact with the back surface of the computer processor die and comprising, The back surface of the computer processor die is configured to selectively profile the thickness of the computer processor die at a profiling temperature so that the back surface of the computer processor die is substantially flat at a test temperature. System. **Claim 21**: The test temperature is the temperature at which the amount of material of the computer processor die to be removed from the back surface of the unprofiled computer processor die is determined when profiling the thickness of the computer processor die to substantially flatten the back surface of the computer processor die at the test temperature. The profiling temperature is the temperature at which the thickness of the computer processor die is profiled by removing material of the computer processor die from the back surface of the computer processor die to substantially flatten the back surface of the computer processor die at the test temperature, according to the system of claim 20.

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