Substrate Processing Apparatus and Substrate Processing Method

Abstract

To provide a technique capable of suppressing adhesion of particles to a substrate regardless of the number of processed substrates.SOLUTION: A substrate processing apparatus according to the present disclosure includes a processing tank that stores a processing liquid in which a substrate is immersed, a drying tank disposed above the processing tank for drying the substrate, a gas supply unit that supplies mixed gas containing inert gas and organic solvent vapor to the drying tank, and a control unit that controls the gas supply unit, and the control unit changes the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the state of the substrate while maintaining a constant vapor concentration of the organic solvent in the mixed gas supplied to the drying tank.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] The cleaning and drying unit described in Patent Document 1 includes a cleaning tank that stores a rinse liquid (e.g., pure water), a drying tank located above the cleaning tank, a substrate holder that holds a substrate, and a lifting mechanism that raises and lowers the substrate holder. The substrate holder holds a plurality of substrates in a standing posture and arranged horizontally. The lifting mechanism raises and lowers the substrate holder between the inside of the cleaning tank and the drying tank. The plurality of substrates are immersed in the rinse liquid stored in the cleaning tank, then lifted from the liquid surface of the rinse liquid, and dried in the drying tank.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of suppressing particle adhesion to a substrate regardless of the number of processed sheets.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a processing tank that stores a processing liquid in which a substrate is immersed, a drying tank that is disposed above the processing tank and dries the substrate, a gas supply unit that supplies a mixed gas including an inert gas and a vapor of an organic solvent to the drying tank, and a control unit that controls the gas supply unit. The control unit changes the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the state of the substrate while maintaining a constant vapor concentration of the organic solvent in the mixed gas supplied to the drying tank. Shi 、The state of the substrate includes the number of substrates. The control unit has a storage medium that stores information regarding the correlation between the number of substrates, the supply flow rate of the inert gas, and the supply flow rate of the organic solvent. The control unit uses the information to calculate the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates to be processed. 。

Advantages of the Invention

[0006] According to the present disclosure, it is possible to suppress the adhesion of particles to the substrate regardless of the number of processed sheets.

Brief Description of the Drawings

[0007]

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DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding members or components are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0009] 〔Substrate Processing Apparatus〕 With reference to FIGS. 1 to 8, an example of the substrate processing apparatus 1 will be described. The substrate processing apparatus 1 supplies a processing liquid L to the substrate W and then dries the substrate W. The substrate processing apparatus 1 includes a processing container 10, a substrate holder 20, a gas supply unit 30, a gas discharge unit 40, and a control unit 90.

[0010] The processing container 10 has a processing tank 11 for storing the processing liquid L in which the substrate W is immersed. The processing liquid L is, for example, pure water such as DIW. The processing tank 11 has, for example, an inner tank 111 for storing the processing liquid L, an outer tank 112 for recovering the processing liquid L that has overflowed from the inner tank 111, and a seal tank 113 surrounding the upper end of the outer tank 112. Inside the inner tank 111, a nozzle 51 for supplying the processing liquid L into the inner tank 111 is provided. On the bottom wall of the inner tank 111, a discharge port 52 for discharging the processing liquid L stored inside the inner tank 111 is provided.

[0011] The processing container 10 has a drying tank 12 for drying the substrate W. The drying tank 12 is disposed above the processing tank 11. The drying tank 12 includes, for example, a cylindrical side wall 121. The cylindrical side wall 121 is open upward and has a loading outlet 122 for the substrate W at its upper end. The drying tank 12 further has a lid 123 for opening and closing the loading outlet 122. The lid 123 is dome-shaped convex upward and is lifted and lowered by an opening and closing mechanism 53.

[0012] The processing container 10 has a casing 13 between the processing tank 11 and the drying tank 12. Inside the casing 13, a shutter 14 is movably arranged. The shutter 14 is moved between a communication position where the processing tank 11 and the drying tank 12 communicate with each other as shown in FIG. 1 and a blocking position where the processing tank 11 and the drying tank 12 are blocked from each other as shown in FIG. 2.

[0013] The substrate processing apparatus 1 further includes an opening / closing mechanism 54 that moves the shutter 14 between the communication position and the blocking position. The opening / closing mechanism 54 moves the shutter 14 in the horizontal direction. The opening / closing mechanism 54 may also move the shutter 14 in the vertical direction. The shutter 14 is arranged horizontally and holds a frame-shaped seal member 15 on its upper surface.

[0014] The substrate holder 20 holds each of a plurality of substrates W arranged at intervals in the horizontal direction vertically upright, as shown in FIG. 3 for example. The substrate holder 20 can also hold only one substrate W. The substrate holder 20 has, for example, a plurality (for example, four) of arms 21 extending in the horizontal direction. The plurality of arms 21 each include a groove 211 formed at an equal pitch in the extending direction. The peripheral edge of the substrate W is inserted into the groove 211. The plurality of arms 21 hold the peripheral edge of each substrate W at a plurality of points.

[0015] The substrate holder 20 has a vertical back plate 22 that supports the plurality of arms 21 in a cantilever manner, and a lifting rod 23 (see FIGS. 1 and 2) extending straight up from the back plate 22. The lifting rod 23 is inserted through a through hole of the lid 123, and a sealing mechanism is provided in the through hole. A lifting mechanism 55 is connected to the upper end of the lifting rod 23. The lifting mechanism 55 raises and lowers the substrate holder 20.

[0016] The gas supply unit 30 supplies gas into the processing container 10. The gas to be supplied is, for example, an inert gas G1 or a mixed gas of an inert gas G1 and vapor G2 of an organic solvent. The inert gas is, for example, nitrogen (N2) gas. The organic solvent is, for example, IPA (isopropyl alcohol). The gas to be supplied may be preheated from the viewpoint of being able to promote drying of the substrate W.

[0017] The gas supply unit 30 includes a nozzle 31. The nozzle 31 is provided inside the processing container 10 and supplies gas inside the processing container 10. A supply line 32 is connected to the nozzle 31. The supply line 32 has a common line 321 and a plurality of individual lines 322 to 323.

[0018] The common line 321 connects the confluence point of the plurality of individual lines 322 to 323 and the nozzle 31. A heater 33 for heating the gas to be supplied may be provided in the middle of the common line 321.

[0019] The individual line 322 supplies an inert gas G1 to the nozzle 31. The individual line 323 supplies a vapor G2 of an organic solvent to the nozzle 31. An on-off valve 34 and a flow controller 35 are provided in the middle of each of the individual lines 322 and 323.

[0020] The gas discharge unit 40 discharges gas from inside the processing container 10 to the outside. The gas discharge unit 40 includes, for example, a discharge line 41 extending from the drying tank 12. An on-off valve 42 and a flow controller 43 are provided in the middle of the discharge line 41.

[0021] The control unit 90 controls each part of the substrate processing apparatus 1. The control unit 90 is, for example, a computer and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. A program for controlling various processes executed in the substrate processing apparatus 1 is stored in the storage medium 92. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the program stored in the storage medium 92.

[0022] The CPU 91 corrects the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates W to be processed.

[0023] The storage medium 92 stores various information used when the CPU 91 calculates the supply flow rate of the inert gas and the supply flow rate of the organic solvent.

[0024] The various information may include a table T1 in which the vapor concentration of the organic solvent in the mixed gas supplied to the drying chamber 12 (hereinafter referred to as "the vapor concentration of the organic solvent"), the reference supply flow rate of the inert gas, and the reference supply flow rate of the organic solvent when the number of substrates W is the reference number are associated with each other. The reference number may be, for example, the maximum number of substrates W that the substrate holder 20 can hold. For example, as shown in FIG. 4, in the table T1, the reference number is 100, and the reference supply flow rate of the inert gas and the reference supply flow rate of the organic solvent when the vapor concentration of the organic solvent is D1 [vol%] are X1 [L / min] and Y1 "ml / sec", respectively.

[0025] The various information may include a table T2 in which the vapor concentration of the organic solvent, the number of substrates W, and the supply flow rate ratio of the inert gas are associated with each other. When the vapor concentration of the organic solvent is not changed from the reference concentration, the table T2 may not include the concentration of the organic solvent. The supply ratio of the inert gas is a value representing the ratio to the reference supply flow rate as a percentage. For example, as shown in FIG. 5, in the table T2, when the vapor concentration of the organic solvent is D1 [vol%] and the number of substrates W is from 1 to 10, the supply flow rate ratio of the inert gas is 44%.

[0026] The various information may include a table T3 in which the vapor concentration of the organic solvent, the number of substrates W, and the supply flow rate ratio of the organic solvent are associated with each other. When the vapor concentration of the organic solvent is not changed from the reference concentration, the table T3 may not include the concentration of the organic solvent. The supply flow rate ratio of the organic solvent is a value representing the ratio to the reference supply flow rate as a percentage. For example, as shown in FIG. 6, in the table T3, when the vapor concentration of the organic solvent is D1 [vol%] and the number of substrates W is from 1 to 10, the supply flow rate ratio of the organic solvent is 44%. Note that only one of the table T2 and the table T3 is sufficient. Since the vapor concentration of the organic solvent is controlled to be constant, if either the supply flow rate ratio of the inert gas or the supply flow rate ratio of the organic solvent is determined, the other will be automatically determined.

[0027] Various information may include a table T4 in which the vapor concentration of the organic solvent, the number of substrates W, and the supply flow rate of the inert gas are associated. The supply flow rate of the inert gas is fixed, for example, regardless of the vapor concentration of the organic solvent, and is changed only according to the number of substrates W. The supply flow rate of the vapor of the organic solvent is automatically determined from the vapor concentration of the organic solvent and the supply flow rate of the inert gas. When the vapor concentration of the organic solvent is changed in a recipe or the like, the supply flow rate of the vapor of the organic solvent is corrected based on the changed vapor concentration. When the vapor concentration of the organic solvent is not changed from the reference concentration, the table T4 may not include the concentration of the organic solvent. For example, as shown in FIG. 7, in the table T4, when the vapor concentration of the organic solvent is D1 [vol%] and the number of substrates W is 1 to 10, the supply flow rate of the inert gas is P1 [L / min].

[0028] Various information may include a table T5 in which the number of substrates W, the vapor concentration of the organic solvent, and the supply flow rate of the organic solvent are associated. For example, as shown in FIG. 8, in the table T5, when the number of substrates W is 1 to 10 and the vapor concentrations of the organic solvent are D1, D2, and D3 [vol%], the supply flow rates of the organic solvent are Q11, Q21, and Q31 [ml / sec], respectively. In the table T5, the magnitude relationship of D1, D2, and D3 is D1 < D2 < D3, and the magnitude relationship of Q11, Q21, and Q31 is Q11 < Q21 < Q31. The magnitude relationships of Q12 to Q20, Q22 to Q30, and Q31 to Q40 are the same as the magnitude relationship of Q11, Q21, and Q31.

[0029] 〔Substrate processing method〕 With reference to FIGS. 9 to 14, an example of a substrate processing method implemented in the substrate processing apparatus 1 of the embodiment will be described. The substrate processing method is implemented by the control unit 90 controlling each part of the substrate processing apparatus 1.

[0030] In step S11, the control unit 90 calculates the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates W to be processed.

[0031] For example, the control unit 90 acquires the vapor concentration of the organic solvent and the number of substrates W to be processed. The vapor concentration of the organic solvent is a value set in a recipe, for example. The number of substrates W to be processed is a value obtained by measuring the number of substrates W stored in a transport container such as a FOUP (Front Opening Unified Pod) placed on a load port, for example, before the substrates W are carried into the interior of the processing container 10. Further, the control unit 90 calculates the supply flow rate of the inert gas based on the acquired vapor concentration of the organic solvent, the acquired number of substrates W to be processed, the table T1 stored in the storage medium 92, and the table T2 stored in the storage medium 92. Further, the control unit 90 calculates the supply flow rate of the organic solvent based on the acquired vapor concentration of the organic solvent, the acquired number of substrates W to be processed, the table T1 stored in the storage medium 92, and the table T3 stored in the storage medium 92. As an example, consider the case where the vapor concentration of the organic solvent is D1 and the number of substrates W is 1 to 10. In this case, the supply flow rate of the inert gas is obtained by multiplying the supply flow rate X1 of the inert gas obtained by referring to the table T1 by the supply flow rate ratio 44% of the inert gas obtained by referring to the table T2 and dividing by 100. That is, the supply flow rate of the inert gas is calculated by (X1 × 44) / 100. Further, the supply flow rate of the organic solvent is obtained by multiplying the supply flow rate Y1 of the organic solvent obtained by referring to the table T1 by the supply flow rate ratio 44% of the organic solvent obtained by referring to the table T3 and dividing by 100. That is, the supply flow rate of the organic solvent is calculated by (Y1 × 44) / 100.

[0032] Further, for example, when calculating the supply flow rate of the inert gas and the supply flow rate of the organic solvent, the control unit 90 may refer to table T4 stored in the storage medium 92 instead of referring to tables T1, T2, and T3. In this case, the control unit 90 calculates the supply flow rate of the inert gas and the supply flow rate of the organic solvent based on the acquired vapor concentration of the organic solvent, the acquired number of substrates W to be processed, and table T4 stored in the storage medium 92. As an example, consider the case where the vapor concentration of the organic solvent is D1 and the number of substrates W is 1 to 10. In this case, based on the supply flow rate P1 of the inert gas obtained by referring to table T4 and the vapor concentration D1 of the organic solvent, the supply flow rate of the organic solvent can be obtained by a known calculation. Also, by the same calculation, the supply flow rate of the organic solvent is calculated for each number of substrates W and vapor concentration of the organic solvent, and a table T5 in which the number of substrates W, the vapor concentration of the organic solvent, and the supply flow rate of the organic solvent are associated with each other may be generated and stored in the storage medium 92.

[0033] In step S12, the control unit 90 controls the operation of the substrate processing apparatus 1 so as to perform a drying process on the substrate W to be processed in the substrate processing apparatus 1.

[0034] First, as shown in FIG. 10(a), in the processing container 10 before the substrate W is carried in, the lid 123 has moved to the closed position. At this time, the heated inert gas G1 is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside from the discharge line 41 to adjust the temperature inside the drying tank 12. Also, the processing liquid L is supplied from the nozzle 51 into the processing tank 11.

[0035] Subsequently, as shown in FIG. 10(b), the opening / closing mechanism 53 moves the lid 123 from the closed position to the open position. Subsequently, the substrate holder 20 (see FIGS. 1 and 2; not shown in FIGS. 10 to 14) receives a plurality of substrates W from a transfer device (not shown) above the processing container 10. Note that, as described above, the substrate holder 20 can also hold only one substrate W. Subsequently, the elevating mechanism 55 (see FIGS. 1 and 2; not shown in FIGS. 10 to 14) lowers the substrate holder 20. While the elevating mechanism 55 lowers the substrate holder 20, the shutter 14 is positioned at the communication position so as not to interfere with the substrate holder 20 and the substrates W. By lowering the substrate holder 20, the elevating mechanism 55 immerses a plurality of substrates W in the processing liquid L. As a result, a plurality of substrates W are processed simultaneously. At this time, an inert gas G1 at a small flow rate (e.g., 20 L / min) is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside through the discharge line 41. Also, the processing liquid L is supplied from the nozzle 51 into the processing tank 11.

[0036] Subsequently, as shown in FIG. 10(c), the opening / closing mechanism 53 moves the lid 123 from the open position to the closed position, and closes the carry-in outlet 122 with the lid 123. At this time, an inert gas G1 at a large flow rate (e.g., 356 L / min) is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside through the discharge line 41. Also, the processing liquid L is supplied from the nozzle 51 into the processing tank 11.

[0037] Subsequently, as shown in FIG. 11(a), the elevating mechanism 55 raises the substrate holder 20 to lift a plurality of substrates W from the processing liquid L stored inside the processing tank 11, and stops the substrate holder 20 in the internal space of the drying tank 12. At this time, an inert gas G1 at a small flow rate (e.g., 30 L / min) is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside through the discharge line 41 to volatilize the droplets adhering to the substrates W and dry the substrates W. Also, the processing liquid L is supplied from the nozzle 51 into the processing tank 11.

[0038] Subsequently, as shown in FIG. 11(b), a mixed gas G3 of an inert gas G1 and a vapor G2 of an organic solvent is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside from the discharge line 41. The vapor G2 of the organic solvent contacts the front and back surfaces of each substrate W, condenses (dew condenses) on the front and back surfaces of each substrate W, and the processing liquid L on the front and back surfaces of each substrate W is replaced by the condensed organic solvent. Thereby, drying of the substrate W can be promoted. At this time, a mixed gas of an inert gas and a vapor of an organic solvent is supplied into the drying tank 12 at the supply flow rate of the inert gas and the supply flow rate of the organic solvent calculated in step S11. Further, the processing liquid L is supplied from the nozzle 51 into the processing tank 11.

[0039] Subsequently, as shown in FIG. 11(c), the opening / closing mechanism 54 moves the shutter 14 from the communication position to the blocking position. At this time, the supply of the mixed gas G3 into the drying tank 12, the discharge of the gas to the outside of the drying tank 12, and the supply of the processing liquid L into the processing tank 11 are continued.

[0040] Subsequently, as shown in FIG. 12(a), with the shutter 14 moved to the blocking position, the supply of the mixed gas G3 into the drying tank 12, the discharge of the gas to the outside of the drying tank 12, and the supply of the processing liquid L into the processing tank 11 are continued for a predetermined time. The predetermined time is determined, for example, by a recipe.

[0041] Subsequently, as shown in FIG. 12(b), an inert gas is supplied from the nozzle 31 into the drying tank 12 at a first flow rate (for example, 270 L / min), and the gas inside the drying tank 12 is discharged to the outside from the discharge line 41. Also, the supply of the processing liquid L from the nozzle 51 into the processing tank 11 is stopped. Thereby, the usage amount of the processing liquid L can be reduced.

[0042] Subsequently, as shown in FIG. 12(c), an inert gas is supplied from the nozzle 31 into the drying tank 12 at a second flow rate (e.g., 445 L / min) that is greater than the first flow rate, and the gas inside the drying tank 12 is discharged to the outside from the discharge line 41. Also, the supply of the processing liquid L from the nozzle 51 into the processing tank 11 is continuously stopped. Thereby, the usage amount of the processing liquid L can be reduced.

[0043] Subsequently, as shown in FIG. 13, the opening / closing mechanism 53 moves the lid 123 from the closed position to the open position to open the carry-in outlet 122. Also, the elevating mechanism 55 raises the substrate holder 20 to carry out a plurality of substrates W to the outside of the processing container 10. Thereafter, the substrate holder 20 passes the substrate W to a transfer device (not shown) above the processing container 10. At this time, an inert gas G1 at a small flow rate (e.g., 20 L / min) is supplied from the nozzle 31 into the drying tank 12, and the gas inside the drying tank 12 is discharged to the outside from the discharge line 41. Also, the supply of the processing liquid L from the nozzle 51 into the processing tank 11 is continuously stopped. Thereby, the usage amount of the processing liquid L can be reduced.

[0044] Thus, the substrate processing method of the embodiment ends.

[0045] In the above embodiment, the case where the inert gas G1 is supplied from the nozzle 31 into the drying tank 12 when pulling up a plurality of substrates W from the processing liquid L stored inside the processing tank 11 has been described, but it is not limited thereto. For example, as shown in FIGS. 14(a) and 14(b), after a plurality of substrates W are immersed in the processing liquid L and before the pulling-up starts, until the pulling-up ends, a mixed gas G3 may be supplied from the nozzle 31 into the drying tank 12. Thereby, a film of the organic solvent can be formed on the liquid surface of the processing liquid L. As a result, as each substrate W passes through the film of the organic solvent during the pulling-up, the processing liquid L on the front and back surfaces of each substrate W is replaced with the organic solvent, so that the drying of each substrate W is promoted.

[0046] In the above-described embodiment, the case where a mixed gas of the inert gas G1 and the vapor G2 of the organic solvent is supplied from the nozzle 31 into the drying tank 12 at a constant flow rate has been described, but the present invention is not limited thereto. For example, while maintaining the vapor concentration of the organic solvent constant, the flow rate of the mixed gas G3 of the inert gas G1 and the vapor G2 of the organic solvent supplied from the nozzle 31 into the drying tank 12 may be changed midway. As an example, while maintaining the vapor concentration of the organic solvent constant, the mixed gas G3 may be first supplied at the same flow rate as the flow rate of the mixed gas in the above-described embodiment, and then the mixed gas G3 may be supplied at a flow rate larger than the flow rate of the mixed gas in the above-described embodiment. As another example, while maintaining the vapor concentration of the organic solvent constant, the mixed gas G3 may be first supplied at a flow rate larger than the flow rate of the mixed gas in the above-described embodiment, and then the mixed gas G3 may be supplied at the same flow rate as the flow rate of the mixed gas in the above-described embodiment. By adding to supply the mixed gas G3 at a flow rate larger than the flow rate of the mixed gas in the above-described embodiment in this way, the vapor G2 of the organic solvent easily reaches the lower end of each substrate W, so that the replacement of the droplets of the processing liquid L remaining at the lower end of the substrate W by the organic solvent is promoted.

[0047] Referring to FIG. 15, when drying the substrate W of the second number (for example, 3 sheets) less than the first number while controlling the supply flow rate of the inert gas and the supply flow rate of the organic solvent to the values for the first number (for example, 50 sheets to 80 sheets), the reason for the adhesion of particles to the substrate W will be described. In this case, the amount of the vapor of the organic solvent becomes excessive inside the drying tank 12. As a result, the vapor of the organic solvent condenses on the inner wall surface of the drying tank 12, the surface of the substrate holder 20, etc., in addition to the front and back surfaces of the substrate W. Therefore, when an inert gas is supplied into the drying tank 12 following the supply of the mixed gas, the inert gas suspends the condensed organic solvent OS in a mist form on the inner wall surface of the drying tank 12, the surface of the substrate holder 20, etc. As a result, as indicated by the dashed arrow in FIG. 15, the organic solvent OS suspended in a mist form reattaches to the substrate W and becomes particles.

[0048] Referring to FIG. 16, when drying a substrate W of a third number of sheets (e.g., 100 sheets) which is larger than the first number of sheets while controlling the supply flow rate of the inert gas and the supply flow rate of the organic solvent to the values for the first number of sheets (e.g., 50 to 80 sheets), the reason for particles adhering to the substrate W will be explained. In this case, as indicated by the solid arrow in FIG. 16, the vapor of the organic solvent easily flows into the wide space between the substrate W held at one end and the other end of the substrate holder 20 and the inner wall surface of the drying chamber 12. As a result, in the substrate W held at one end and the other end of the substrate holder 20, more vapor of the organic solvent condenses on the surface on the inner wall surface side of the drying chamber 12 than on the surface on the side of the other substrate W. Therefore, before the vapor of the organic solvent condenses on the surface on the side of the other substrate W, the temperature of the substrate W rises due to the heat of condensation of the condensed organic solvent OS on the surface on the inner wall surface side of the drying chamber 12. Therefore, the condensation of the vapor of the organic solvent on the surface on the side of the other substrate W becomes insufficient. As a result, droplets of the processing liquid L remain at the lower end of the surface on the side of the other substrate W of the substrate W held at one end and the other end of the substrate holder 20, and when the droplets evaporate, the residues in the droplets become particles.

[0049] On the other hand, in the substrate processing apparatus 1 of the embodiment, the control unit 90 changes the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates W while maintaining the vapor concentration of the organic solvent in the mixed gas supplied to the drying chamber 12 constant.

[0050] For example, when the number of substrates W is the second number of sheets, the control unit 90 makes the supply flow rate of the inert gas and the supply flow rate of the organic solvent smaller than when the number of substrates W is the first number of sheets while maintaining the vapor concentration of the organic solvent constant. Thereby, it is possible to prevent the amount of the vapor of the organic solvent from becoming excessive inside the drying chamber 12. Therefore, the amount of the vapor of the organic solvent condensed on the inner wall surface of the drying chamber 12, the surface of the substrate holder 20, etc. can be reduced. As a result, it is possible to suppress the adhesion of particles to the substrate W.

[0051] For example, when the number of substrates W is the third number, the control unit 90 increases the supply flow rate of the inert gas and the supply flow rate of the organic solvent while maintaining the vapor concentration of the organic solvent constant, compared to the case where the number of substrates W is the first number. As a result, the vapor of the organic solvent is more likely to be supplied between adjacent substrates W. Therefore, the difference in the amount of the vapor of the organic solvent condensed between the surface on the other substrate W side of the substrates W held at one end and the other end of the substrate holder 20 and the surface on the inner wall surface side of the drying chamber 12 becomes smaller, and the vapor of the organic solvent is sufficiently condensed on both surfaces. As a result, it is possible to suppress the adhesion of particles to the substrate W.

[0052] 〔Example〕 In the substrate processing apparatus 1 according to the embodiment, an example will be described in which a drying process is performed under the following four conditions A to D in which the number of substrates W, the supply flow rate of the inert gas, and the supply flow rate of the organic solvent are changed, and then the number of particles attached to the substrate W is measured. In the example, IPA was used as the organic solvent and nitrogen gas was used as the inert gas. In the example, in order to confirm the reproducibility, the evaluation in which the drying process and the measurement of the number of particles are sequentially performed under each of the conditions A to D was performed three times.

[0053] Conditions A and B are conditions in which the supply flow rate of the inert gas and the supply flow rate of the organic solvent are fixed. In other words, the supply flow rate of the inert gas and the supply flow rate of the organic solvent are not changed according to the number of substrates W. Specifically, in condition A, the number of substrates W was set to 3, the supply flow rate of the inert gas was set to 79%, and the supply flow rate of the organic solvent was set to 79%. In condition B, the number of substrates W was set to 100, the supply flow rate of the inert gas was set to 79%, and the supply flow rate of the organic solvent was set to 79%.

[0054] Conditions C and D are conditions in which the supply flow rate of the inert gas and the supply flow rate of the organic solvent are deflected according to the number of substrates W. Specifically, in condition C, the number of substrates W was set to 3, the supply flow rate of the inert gas was set to 44%, and the supply flow rate of the organic solvent was set to 44%. In condition D, the number of substrates W was set to 100, the supply flow rate of the inert gas was set to 100%, and the supply flow rate of the organic solvent was set to 100%.

[0055] In addition, under Conditions A to D, the vapor concentration of the organic solvent supplied to the drying tank 12 is constant.

[0056] FIG. 17 is a diagram showing the results of measuring the number of particles adhering to the substrate W, and shows the results of measuring the number of particles of 40 nm or more adhering to one substrate W for each condition. In FIG. 17, "one end", "center", and "the other end" respectively show the results of the substrate W located at one end, the center, and the other end of the substrate holder 20. Also, "first time", "second time", and "third time" respectively show the results of the first time, the second time, and the third time among the three evaluations performed.

[0057] As shown in FIG. 17, it can be seen that under Conditions C and D, the number of particles is small regardless of the position of the substrate W. Specifically, under Condition C, in the three evaluations performed, the number of particles was 0 to 10. Under Condition D, in the three evaluations performed, the number of particles was 1 to 12.

[0058] On the other hand, it can be seen that under Conditions A and B, the number of particles is larger than under Conditions C and D. Specifically, under Condition A, in the three evaluations performed, the number of particles was 9 to 70. Under Condition B, in the three evaluations performed, the number of particles was 1 to 46. Also, under Condition B, the number of particles was larger on the substrate W located at one end and the other end of the substrate holder 20 than on the substrate W located at the center of the substrate holder 20.

[0059] From these results, it was shown that when the number of substrates W is small, by reducing the supply flow rate of the inert gas and the supply flow rate of the organic solvent while maintaining a constant vapor concentration of the organic solvent, it is possible to suppress the adhesion of particles to the substrate W. On the other hand, when the number of substrates W is large, it was shown that by increasing the supply flow rate of the inert gas and the supply flow rate of the organic solvent while maintaining a constant vapor concentration of the organic solvent, it is possible to suppress the adhesion of particles to the substrate W. That is, it was shown that by changing the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates W while maintaining a constant vapor concentration of the organic solvent, it is possible to suppress the adhesion of particles to the substrate W.

[0060] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and spirit of the appended claims.

[0061] In the above embodiment, the case where the supply flow rate of the inert gas and the supply flow rate of the organic solvent are changed according to the number of substrates W while maintaining a constant vapor concentration of the organic solvent was described, but the present disclosure is not limited thereto. That is, the state of the substrate W is not limited to the number of substrates W. While maintaining a constant vapor concentration of the organic solvent, the supply flow rate of the inert gas and the supply flow rate of the organic solvent may be changed according to the arrangement pitch of the plurality of substrates W held by the substrate holder 20. In this case, the narrower the arrangement pitch of the substrates W, the more the supply flow rate of the inert gas and the supply flow rate of the organic solvent are increased, thereby suppressing the adhesion of particles to the substrates W. Further, for example, while maintaining a constant vapor concentration of the organic solvent, the supply flow rate of the inert gas and the supply flow rate of the organic solvent may be changed according to both the number of substrates W and the arrangement pitch of the substrates W.

Explanation of Reference Numerals

[0062] 1 Substrate processing apparatus 11 Processing tank 12 Drying tank 30 Gas supply unit 90 Control unit W Substrate

Claims

1. A processing tank for storing a processing liquid into which a substrate is immersed; A drying tank disposed above the processing tank for drying the substrate; A gas supply unit for supplying a mixed gas containing an inert gas and vapor of an organic solvent to the drying tank; A control unit for controlling the gas supply unit; which has while maintaining the vapor concentration of the organic solvent in the mixed gas supplied to the drying tank constant, the control unit changes the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the state of the substrate, the state of the substrate includes the number of the substrates, the control unit has a storage medium for storing information on the correlation between the number of the substrates, the supply flow rate of the inert gas, and the supply flow rate of the organic solvent, the control unit calculates the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of the substrates to be processed by using the information, A substrate processing apparatus.

2. the control unit increases the supply flow rate of the inert gas and the supply flow rate of the organic solvent as the number of the substrates to be processed increases, The substrate processing apparatus according to claim 1.

3. the control unit measures the number of the substrates to be processed before the substrate is carried into the drying tank, The substrate processing apparatus according to claim 1 or 2.

4. the control unit changes the supply flow rate of the organic solvent during the supply of the mixed gas to the drying tank, The substrate processing apparatus according to any one of claims 1 to 3.

5. the control unit supplies the mixed gas to the drying tank after the substrate is immersed in the processing liquid and before the substrate is lifted from the processing liquid, and then supplies the mixed gas to the drying tank when the substrate is lifted from the processing liquid, The substrate processing apparatus according to any one of claims 1 to 4.

6. Immersing the substrate in the processing liquid stored in the processing tank, Supplying a mixed gas containing an inert gas and vapor of an organic solvent to a drying tank disposed above the processing tank to dry the substrate, having, drying the substrate includes changing the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the state of the substrate while maintaining a constant vapor concentration of the organic solvent in the mixed gas supplied to the drying tank, the state of the substrate includes the number of the substrates, storing information regarding the correlation between the number of the substrates, the supply flow rate of the inert gas, and the supply flow rate of the organic solvent, calculating the supply flow rate of the inert gas and the supply flow rate of the organic solvent according to the number of substrates to be processed using the information, A substrate processing method having.

7. drying the substrate includes increasing the supply flow rate of the inert gas and the supply flow rate of the organic solvent as the number of substrates to be processed increases, The substrate processing method according to claim 6.

8. measuring the number of substrates to be processed before the substrate is carried into the drying tank, The substrate processing method according to claim 6 or 7.

9. having a step of changing the supply flow rate of the organic solvent during the supply of the mixed gas to the drying tank, The substrate processing method according to any one of claims 6 to 8.

10. supplying the mixed gas to the drying tank after the substrate is immersed in the processing liquid and before the substrate is lifted from the processing liquid, and then supplying the mixed gas to the drying tank when the substrate is lifted from the processing liquid, The substrate processing method according to any one of claims 6 to 9.

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