Substrate processing apparatus

Abstract

To provide a technology that can more surely prevent a substrate having liquid adhering to its lower surface from being charged into a drying treatment unit.SOLUTION: A substrate treatment apparatus includes: a substrate conveyance unit that conveys a substrate having a top face which is wet with a treatment liquid; and a drying treatment unit that dries the substrate in a state of being wet with the treatment liquid. The drying treatment unit includes: a delivery area in which the substrate is delivered to / from the substrate conveyance unit; and a drying area in which a top face of the substrate is subjected to drying treatment. In the delivery area, there are provided a substrate supporting member that supports the substrate received from the substrate conveyance unit in a horizontal posture, and a substrate lower surface drying unit that dries a lower surface of the substrate by blowing gas to the lower surface of the substrate supported by the substrate supporting member when the lower surface of the substrate is wet with the treatment liquid.SELECTED DRAWING: Figure 18A

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus.

Background Art

[0002] In the manufacture of semiconductor devices, in a liquid processing unit, liquid processing such as wet etching or cleaning is performed on a substrate using a chemical solution. In recent years, with the miniaturization of patterns, pattern collapse has become more likely to occur, and supercritical drying treatment that can effectively prevent pattern collapse has attracted attention. The supercritical drying treatment is performed, for example, in a supercritical chamber by replacing IPA (isopropyl alcohol) covering the entire surface (upper surface) of the substrate with supercritical CO2 (carbon dioxide in a supercritical state), and then removing the supercritical CO2 from the substrate by bringing the atmosphere around the substrate to normal pressure. When forming an IPA liquid film on the substrate surface in the liquid processing unit, or when transporting the substrate from the liquid processing unit to the supercritical chamber, IPA may leak around the back surface (lower surface) of the substrate. When introducing supercritical CO2 into the supercritical chamber, if the IPA adhering to the lower surface of the substrate leaks around to the upper surface of the substrate, there is a risk of generating particles on the surface of the substrate.

[0003] Patent Document 1 describes that an inert gas is blown onto the lower surface of the substrate during the transportation of the substrate by a gas supply unit provided in a substrate transportation unit that transports the substrate from a liquid processing unit (liquid processing section) to a supercritical chamber (drying processing section), thereby preventing IPA from leaking around the lower surface of the substrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a technique that can more reliably prevent a substrate with liquid adhering to its lower surface from being introduced into a drying treatment unit.

Means for Solving the Problems

[0006] A substrate processing apparatus according to an embodiment of the present disclosure includes a substrate transfer unit that transfers a substrate having an upper surface wetted with a processing liquid, and a drying treatment unit that dries the substrate in a state of being wetted with the processing liquid. The drying treatment unit has a transfer area where the substrate is transferred between the substrate transfer unit, and a drying area where the upper surface of the substrate is dried. In the transfer area, there are provided a substrate support member that supports the substrate received from the substrate transfer unit in a horizontal posture, and a substrate lower surface drying unit that dries the lower surface of the substrate supported by the substrate support member by blowing gas onto the lower surface of the substrate when the lower surface of the substrate is wetted with the processing liquid.

Effects of the Invention

[0007] According to the present disclosure, it is possible to more reliably prevent a substrate with liquid adhering to its lower surface from being introduced into a drying treatment unit.

Brief Description of the Drawings

[0008]

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Embodiments for Carrying Out the Invention

[0009] An embodiment of a substrate processing apparatus will be described with reference to the accompanying drawings.

[0010] <Overall configuration of the substrate processing system> First, the overall configuration of the substrate processing system 1 will be described. As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3.

[0011] The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C for accommodating a plurality of substrates W to be processed, for example, semiconductor wafers, in a horizontal posture at equal intervals in the vertical direction are placed on the carrier placement unit 11.

[0012] The substrate W has a surface which is a device formation surface and a back surface on the opposite side. In this substrate processing system 1, however, the substrate W is always handled such that the surface faces upward, that is, the surface becomes the upper surface. Hereinafter, in this specification, the surface will also be referred to as the upper surface, and the back surface will also be referred to as the lower surface.

[0013] Inside the transfer unit 12, a transfer device 13 and a delivery unit 14 are arranged. The transfer device 13 can transfer the substrate W between an arbitrary carrier C on the carrier placement unit 11 and the delivery unit 14. As the transfer device 13, any type of transfer robot such as an articulated robot for wafer transfer or a Cartesian robot known in the art can be used.

[0014] The processing station 3 includes a transfer block 4 and two processing blocks 5 provided on both sides of the transfer block 4.

[0015] The transfer block 4 includes a transfer area 15 and a transfer device 16 disposed within the transfer area 15. The transfer area 15 is, for example, a substantially rectangular parallelepiped region extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 can transfer the substrate W between the delivery unit 14 and the plurality of processing blocks 5.

[0016] Each processing block 5 includes a liquid processing unit 17 that performs liquid processing on the substrate W, a drying processing unit 18 that performs supercritical drying processing on the substrate W, and a processing fluid supply unit 19 that supplies a processing fluid for supercritical drying processing to the drying processing unit 18.

[0017] The substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer and includes a control unit 61 and a storage unit 62.

[0018] The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input / output ports, etc., and various circuits. The CPU of such a microcomputer reads and executes the program stored in the ROM to control the operations of the transfer device 16, the liquid processing unit 17, the drying processing unit 18, etc.

[0019] Such a program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 62 of the control device 6. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, etc.

[0020] The storage unit 62 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0021] <Transfer device> Next, with reference to FIG. 2, an example of the configuration of the transfer device 16 disposed in the transfer area 15 will be described.

[0022] The transfer device 16 includes a first holding unit 110 and a second holding unit 120 that can each hold one substrate W, a first advancing / retreating mechanism 130, a second advancing / retreating mechanism 140, a lifting mechanism 150, and a horizontal movement mechanism 160. The mechanisms 130, 140, 150, and 160 can be configured as a movement mechanism including an appropriate linear actuator such as an air cylinder or a ball screw.

[0023] The first advancing / retreating mechanism 130 advances and retreats the first holding unit 110 in the horizontal direction (Y-axis direction). The second advancing / retreating mechanism 140 advances and retreats the second holding unit 120 along the Y-axis direction. The lifting mechanism 150 moves the first advancing / retreating mechanism 130 and the second advancing / retreating mechanism 140 along the vertical direction to lift and lower the first holding unit 110 and the second holding unit 120. The horizontal movement mechanism 160 moves the lifting mechanism 150 in the horizontal direction (X-axis direction) to move the first holding unit 110 and the second holding unit 120 in the X-axis direction.

[0024] As shown in FIG. 3, the first holding unit 110 includes a bifurcated flat base portion 111 and a plurality of support members 112 provided on the surface of the base portion 111. The first holding unit 110 horizontally holds the substrate W by supporting the substrate W from below using the plurality of support members 112.

[0025] As shown in FIGS. 4 and 5, the second holding unit 120 includes a base portion 121, a plurality of support pins 122, a plurality of chucks 123, a gas supply unit 124, and a drainage unit 125.

[0026] The base portion 121 is a plate-shaped member as a whole, and has a disk-shaped recess 121a with a diameter larger than that of the substrate W at the central portion on the upper surface side thereof. A plurality of support pins (support members) 122 project upward from the bottom surface of the recess 121a and support the peripheral portion of the substrate W from below. Each support pin 122 is vertically movable by a lifting mechanism 122a provided with an appropriate linear actuator.

[0027] A plurality of chucks (holding members) 123 are provided on the inner surface of the peripheral wall of the recess 121a. Each chuck 123 is moved along the radial direction of the substrate W to approach and separate from the substrate W by a moving mechanism 123a provided with an appropriate actuator, and can hold or release the substrate W.

[0028] The gas supply unit 124 includes a plurality of discharge ports 124a, a supply pipe 124b, a flow rate adjustment unit 124c, and a gas supply source 124d, and can discharge gas from the discharge ports 124a at a controlled flow rate. The gas supplied from the gas supply source 124d can be, for example, an inert gas, specifically, for example, nitrogen gas.

[0029] The plurality of discharge ports 124a are provided on the bottom surface of the recess 121a of the base portion 121 and are arranged at equal intervals along a circumference concentric with the substrate W. By discharging gas from the plurality of discharge ports 124a toward the peripheral portion of the lower surface of the substrate W, it is possible to suppress the liquid constituting the liquid film L on the upper surface of the substrate W from flowing around to the lower surface of the substrate W.

[0030] As shown in FIG. 5, the second holding portion 120 holds the substrate W at a height position where the upper surface of the substrate W, preferably the upper surface of the liquid film L formed on the substrate W, is lower than the upper surface of the base portion 121. Therefore, it is possible to suppress the liquid separated from the substrate W by the gas from the gas supply unit 124 from scattering outside the second holding portion 120.

[0031] The liquid drainage part 125 can be an opening provided at the center of the bottom surface of the recessed part 121a. The liquid drainage part 125 is connected to a discharge pipe 125a. When the liquid drops off from the substrate W, the liquid can be discharged to the outside of the second holding part 120 through the liquid drainage part 125 and the discharge pipe 125a.

[0032] As schematically shown in FIG. 5, a camera 128 as a substrate lower surface wetting detection part may be provided on the bottom surface of the recessed part 121a of the base part 121. The cameras 128 can be provided at equal intervals along the circumferential direction of, for example, the circular recessed part 121a. In this case, it is preferable to arrange a plurality of cameras 128 so that the entire ring-shaped peripheral region of the lower surface of the substrate W is imaged by any one of the cameras 128. For this reason, specifically, a plurality of cameras 128 can be arranged so that the imaging ranges of two adjacent cameras 128 slightly overlap.

[0033] <Liquid processing unit> Next, an example of the configuration of the liquid processing unit 17 will be described. As shown in FIG. 6, the liquid processing unit 17 is configured as a single-wafer cleaning unit that cleans the substrates W one by one.

[0034] As shown in FIG. 6, the liquid processing unit 17 includes an outer chamber 23, a substrate holding and rotating mechanism (referred to as a spin chuck) 25 provided in the outer chamber 23, and a nozzle arm 26 that holds at least one processing liquid nozzle 26a at its tip. The substrate holding and rotating mechanism 25 holds the substrate W in a horizontal posture and rotates it around a vertical axis. A processing liquid such as a chemical solution or a rinse liquid is supplied from the processing liquid nozzle 26a to the substrate W, and thereby liquid processing such as wet etching or chemical solution cleaning is performed on the upper surface of the substrate W.

[0035] Inside the rotating shaft of the substrate holding and rotating mechanism 25, a gas supply path 25a is formed to supply gas (preferably an inert gas such as nitrogen gas) to the central part of the lower surface of the substrate W.

[0036] In the liquid processing unit 17, for example, an SC1 cleaning process, a DIW (deionized water) rinse process, a DHF cleaning process, and a DIW rinse process are sequentially performed. The processing liquid used in each process is collected by the inner cup 24 and discharged from the drain port 23a or the drain port 24a. Further, the atmosphere in the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.

[0037] After the last rinse process, an IPA liquid film forming process is performed. Specifically, the liquid processing unit 17 supplies IPA (liquid) to the upper surface of the substrate W while rotating the substrate W. Thereby, the DIW remaining on the upper surface of the substrate W is replaced with IPA.

[0038] When at least the IPA liquid film forming process is being performed, a gas, preferably an inert gas, is supplied to the central portion of the lower surface of the substrate W through the gas supply path 25a. The gas supplied to the central portion of the lower surface of the substrate W flows along the lower surface of the substrate W toward the periphery of the substrate W. Thereby, when the IPA liquid film forming process is being performed, it is possible to suppress the IPA supplied to the upper surface of the substrate W from flowing around to the lower surface of the substrate W. Thereafter, the rotation of the substrate W is stopped. The film thickness of the IPA liquid film formed on the upper surface of the substrate W when the substrate W stops is determined by the IPA supply flow rate and the wafer rotation speed before the rotation of the substrate W stops.

[0039] After the completion of the IPA liquid film forming process, the substrate W is transferred to the transfer device 16 by a transfer mechanism (a lifter pin 25b described later) provided in the substrate holding and rotating mechanism 25 while a liquid film of IPA liquid is formed on its surface, and is carried out from the liquid processing unit 17.

[0040] <Drying Processing Unit>

[0041] Next, an example of the configuration of the drying processing unit will be described. As shown in FIG. 1, the drying processing unit 18 includes a drying area 181 and a delivery area 182. The drying area 181 is an area where supercritical drying processing is performed, and can be regarded as an area where a processing container 31 described later is arranged. The delivery area 182 is defined as an area including a place where the substrate W is delivered between the transfer device 16 and a lifter pin 39a described later, and a place where the substrate W is delivered between the lifter pin 39a and a tray (substrate holding unit) 32 described later. In the illustrated embodiment, it can also be said that the delivery area 182 is a substantially rectangular parallelepiped area defined by the locus when the tray 32 pulled out from the processing container 31 described later is moved in the vertical direction.

[0042] As shown in FIG. 7, the drying processing unit 18 includes a processing container 31, a substrate holding unit 32, a lid 33, and a lifter (substrate lifting mechanism) 39. The substrate holding unit 32 has the form of a tray, and will be referred to as the "tray 32" hereinafter.

[0043] The processing container 31 is a pressure vessel that can withstand a high internal pressure of about 16 to 20 MPa, and is also called a supercritical chamber. The processing container 31 is arranged in the drying area 181 (see FIG. 1).

[0044] The tray 32 supports the substrate W in a horizontal posture. The tray 32 is integrally coupled to the lid 33. A moving mechanism 33a is connected to the lid 33. The moving mechanism 33a can be constituted by a suitable linear actuator such as an air cylinder. By the moving mechanism 33a, the tray 32 can move horizontally (for example, in the X direction) between the drying area 181 (specifically, inside the processing container 31) and the delivery area 182.

[0045] When the tray 32 is accommodated inside the processing container 31, the lid 33 closes the opening 34 of the processing container 31. A latch-like locking mechanism (not shown) can be provided to prevent the tray 32 from being opened by the pressure inside the processing container 31.

[0046] The drying processing unit 18 may be installed so that the tray 32 moves in the Y direction. In this case, the drying area 181 is provided on the side far from the opening 180 (see FIG. 1) for loading and unloading the substrate W, and the delivery area 182 is provided on the side close to the opening 180.

[0047] Supply ports 35A, 35B and a discharge port 36 are provided on the wall of the processing container 31. The supply ports 35A, 35B are respectively connected to supply lines 35C, 35D. The discharge port 36 is connected to a discharge line 36A.

[0048] The supply port 35A is provided on the side wall of the processing container 31 opposite to the opening 34. A fluid supply header 37A having a number of openings is connected to the supply port 35A. The number of openings formed in the fluid supply header 37A faces the opening 34.

[0049] The supply port 35B is provided on the bottom wall of the processing container 31. The supply port 35B opens into the processing container 31 so as to face the bottom surface of the tray 32 accommodated in the processing container 31. The discharge port 36 is provided below the opening 34. A fluid discharge header 38 having a number of openings is connected to the discharge port 36.

[0050] The lifter 39 includes a plurality of lifter pins 39a and a lifting drive unit 39b for raising and lowering the lifter pins 39a. The lifter pins 39a can move up and down between a delivery position (upper limit position) for delivering the substrate W to and from the transfer device 16 and a standby position (lower limit position). The standby position is a position below the tray 32 that does not interfere with the opening and closing operation of the tray 32.

[0051] As shown in FIGS. 8 and 9, the tray 32 includes a plate-like base portion 32a, a plurality of support members 32b provided on the base portion 32a, and a plurality of through holes 32d that penetrate the base portion 32a in the vertical direction. A circular recess 32a1 having a diameter larger than that of the substrate W is formed on the upper surface of the base portion 32a. The plurality of support members 32b project from the bottom surface of the recess 32a1. The substrate W is supported by the support members 32b within the recess 32a1. At this time, a gap is formed between the lower surface of the substrate W and the bottom surface of the recess 32a1.

[0052] The support members 32b are arranged in the peripheral region of the circular recess 32a1. The plurality of through holes 32d are arranged in a region radially inside the support members 32b. The plurality of through holes 32d serve as flow paths for guiding the processing fluid sprayed from the supply port 35B onto the base portion 32a of the tray 32 into the space between the lower surface of the substrate W and the upper surface of the base portion 32a. Among the plurality of through holes 32d, the three through holes 32d formed in the central region of the recess 32a1 also serve as insertion holes for the lifter pins 39a.

[0053] Here, the supercritical drying process executed in the drying unit 18 will be briefly described. In one embodiment, the supercritical drying process replaces the IPA liquid film on the substrate W with a supercritical state processing fluid, here carbon dioxide (CO2), and then vaporizes the CO2 to dry the substrate W. As is well known to those skilled in the art, according to the supercritical drying process, the substrate W can be dried while preventing pattern collapse.

[0054] The supercritical drying process includes a pressure increasing step, a circulation step, and a pressure reducing step. In the pressure increasing step, the processing fluid supplied from the supply source of the supercritical state processing fluid (supercritical CO2) is supplied into the processing vessel 31 through the supply port 35B, thereby increasing the pressure inside the processing vessel 31. When the pressure inside the processing vessel 31 rises to the critical pressure at which it is guaranteed that the fluid (CO2 + IPA) existing inside the processing vessel is maintained in the supercritical state, the process proceeds to the circulation step. In the circulation step, while maintaining the pressure inside the processing vessel 31 at a pressure equal to or higher than the critical pressure, the processing fluid is supplied from the fluid supply header 37A, and the processing fluid inside the processing vessel 31 is discharged through the fluid discharge header 38. As a result, the IPA on the substrate W is replaced with CO2. Thereafter, a pressure reducing step of reducing the pressure inside the processing vessel 31 to atmospheric pressure is carried out, whereby the supercritical state CO2 on the substrate W is vaporized and the wafer is dried.

[0055] Although not shown in the figure, a damper for adjusting the discharge amount of the processing fluid from the processing vessel 31 is provided in the discharge line 36A connected to the discharge port 36. By this damper, in each of the above steps, the pressure inside the processing vessel 31 and the flow rate of the processing fluid circulation are controlled.

[0056] The configuration of the drying processing unit 18 is not limited to the one described above. For example, any known drying processing unit can be used as long as it is designed to perform the same supercritical drying process as described above.

[0057] When the supercritical drying process (particularly the pressure increasing step) is carried out in a state where the liquid of the liquid film L formed on the upper surface of the substrate W adheres to the lower surface of the substrate W, there is a possibility that the liquid adhering to the lower surface of the substrate W may overflow onto the upper surface of the substrate W. The processing fluid discharged from the supply port 35B toward the tray 32 flows through the through hole 32d of the tray 32 toward the lower surface of the substrate W, and after colliding with the lower surface of the substrate W, it flows toward the periphery of the substrate W.

[0058] Due to the flow of this processing fluid, there is a risk that the liquid adhering to the lower surface of the substrate W may overflow onto the upper surface of the substrate W together with the contaminants adhering to the lower surface of the substrate W. These contaminants may remain as particles on the upper surface of the substrate W after drying. Therefore, it is desirable that no liquid adheres to the lower surface of the substrate W at the start of the supercritical drying process.

[0059] <Bottom surface drying part of substrate, liquid receiving part, wetting detection part of substrate bottom surface> To solve the above problems, as shown in FIGS. 10 and 11, in the delivery area 182 of the drying unit 18, a bottom surface drying part 200 of the substrate, a liquid receiving part 300 which is a related device thereof, and a wetting detection part 400 of the substrate bottom surface are provided. These will be described in detail below.

[0060] In the illustrated embodiment, the bottom surface drying part 200 of the substrate, the liquid receiving part 300, and the wetting detection part 400 of the substrate bottom surface are integrated to form one unit.

[0061] The liquid receiving part 300 has the form of a liquid receiving cup 302 provided directly above the tray 32 drawn out to the delivery area 182. This liquid receiving cup 302 is composed of two halves (the first part 303, the second part 304). In the illustrated example, the mating surface (split surface) of the first part 303 and the second part 304 is parallel to the YZ plane, but it may also be parallel to the XZ plane.

[0062] The first part 303 and the second part 304 can move in the X direction (horizontal direction) between an engagement position where the two parts 303, 304 engage with each other and a separation position where they are separated from each other by their respective moving mechanisms 305, 306. The moving mechanisms 305, 306 can be composed of appropriate linear actuators such as air cylinders.

[0063] When the first part 303 and the second part 304 engage and integrate with each other, they form a ring-shaped liquid receiving cup 302 as a whole. The liquid receiving cup 302 has a ring-shaped bottom wall 307 and a ring-shaped side wall 308 that rises vertically upward from the periphery of the bottom wall. At the center of the bottom wall 307, at least one hole 309 that penetrates the bottom wall 307 vertically is formed. In the illustrated embodiment, the "at least one hole 309" is a single hole 309 having a circular shape that can include a plurality (three in this example) of the aforementioned lifter pins 39a in a plan view.

[0064] The size of the single hole 309 can preferably be determined in consideration of the following requirements that are in a trade-off relationship. (1) The liquid receiving cup 302 composed of the first part 303 and the second part 304 engaged with each other can receive the liquid blown off from the substrate W without any problem (liquid capture efficiency). (2) The substrate W supported by the lifter pins 39a can pass between the first part 303 and the second part 304 separated from each other (ease of substrate passage).

[0065] If the size of the hole 309 is small, the substrate W cannot pass between the first part 303 and the second part 304 unless the distance (separation distance) between the first part 303 and the second part 304 in the separated position is set to a distance substantially corresponding to the diameter of the substrate W. By increasing the size of the hole 309, the substrate W can pass between the first part 303 and the second part 304 even if the above separation distance is reduced. If the liquid is blown radially outward from the substrate, there is no problem even if the size of the hole 309 is increased (see the description of the nozzle to be described later). On the other hand, if a space where the first part 303 and the second part 304 can be separated far apart can be secured in the drying processing unit 18, the size of the hole 309 may be small. In this case, the blown-off liquid can be recovered more reliably.

[0066] What is required for the "at least one hole 309" is to allow the passage of a plurality (three in this example) of lifter pins 39a, and not to interfere with the splitting operation of the liquid receiving cup 302 when the plurality (three in this example) of lifter pins 39a described above are passed through the hole 309. For this reason, the above-mentioned "at least one hole 309" may be one or more (for example, the same number as the number of lifter pins 39a) elongated holes extending in the direction of the splitting operation of the liquid receiving cup 302. This elongated hole extends to the splitting surface of the first part 303 and the second part 304 described above.

[0067] The substrate lower surface drying part 200 can be in the form of a nozzle 202 that blows a drying gas for drying the substrate W onto the peripheral part of the lower surface. As the drying gas, for example, a gas with low humidity and low oxygen concentration, specifically, an inert gas such as nitrogen gas can be used. Dry air may also be used as the drying gas.

[0068] The nozzle 202 is provided with a plurality of gas discharge ports 203 (only a part of which is shown in FIG. 10) formed at equal intervals along the circumferential direction of the bottom wall 307 of the liquid receiving cup 302. Inside the bottom wall 307, a gas supply path 204 is formed that extends along the circumferential direction of the bottom wall 307 and supplies gas to each gas discharge port 203.

[0069] Each gas discharge port 203 is opened obliquely upward so that the liquid adhering to the lower surface of the substrate W can be moved toward the periphery of the substrate and blown off outside the periphery of the substrate W. As schematically shown in FIG. 10, the gas supply path 204 is connected to a gas supply part 205. The gas supply part 205 can be composed of, for example, a nitrogen gas supply source as an industrial force, a pipeline that connects the nitrogen gas supply source and the gas supply path 204, and a flow control device (such as an on-off valve, a flow control valve, etc.) interposed in the pipeline.

[0070] The gas supply paths 204 of the first part 303 and the second part 304 may be configured to be connected to each other when the first part 303 and the second part 304 are engaged, or may be configured to remain separated from each other. In the former case, only one gas supply unit 205 may be provided.

[0071] Another gas discharge port (schematically indicated by the dashed arrow 206) that discharges gas toward the space below the bottom wall 307 may be provided in the liquid receiving cup 302. This another gas discharge port 206 may be connected to the gas supply path 204, or may be connected to another gas supply path formed in the bottom wall 307. Immediately below the liquid receiving cup 302, the tray 32 at the transfer position is located. By blowing gas from the another gas discharge port (as shown by the arrow 206) onto the tray 32, even if liquid (e.g., IPA) adhered to the upper surface of the tray 32 or the support pins (support members 32b), it can be removed.

[0072] Instead of forming the hole or recess that forms the nozzle 202 (gas discharge port 203 + gas supply path 204) in the bottom wall 307 of the liquid receiving cup 302, a semi-circularly bent tube (not shown) having a plurality of gas discharge ports may be attached to, for example, the upper surface of the bottom wall 307 and used as the nozzle.

[0073] The liquid (IPA) adhering to the peripheral portion of the lower surface of the substrate W is blown off by the gas discharged from the gas discharge port 203 and collides with the side wall 308 of the liquid receiving cup 302 or falls onto the bottom wall 307. A liquid receiving groove 311 extends along the circumferential direction at the outermost peripheral portion of the bottom wall 307. Preferably, the bottom wall 307 is inclined so as to be lower toward the outer side in the radial direction. Therefore, the liquid that has landed on the side wall 308 or the bottom wall 307 flows into the liquid receiving groove 311.

[0074] One or more drain holes 310 are formed in the liquid receiving groove 311. The bottom surface of the liquid receiving groove 311 is preferably inclined toward each drain hole 310. A drain pipe (not shown) is connected to the drain hole 310. The drain pipe is connected to the organic liquid drainage system of the factory. Considering that the liquid (IPA) discharged from the drain hole 310 is usually in a very small amount and easily evaporates, the drain pipe may be connected to the organic exhaust system of the factory.

[0075] As schematically shown in FIG. 11, as the substrate lower surface wetting detection unit 400, a camera 402 may be provided on the bottom wall 307 of the liquid receiving cup 302. The cameras 402 can be provided at equal intervals along the circumferential direction of the liquid receiving cup 302. In this case, it is preferable to arrange a plurality of cameras 402 so that all of the ring-shaped peripheral regions of the lower surface of the substrate W are imaged by any one of the cameras 402. Specifically, a plurality of cameras 402 can be arranged such that the imaging ranges of two adjacent cameras 402 slightly overlap. A small camera such as that used in a mobile terminal may be embedded in the bottom wall 307.

[0076] The camera 402 is preferably provided at a position where droplets blown off by the gas blown out from the gas discharge port 203 do not adhere. In the example shown in FIG. 11, the camera 402 is provided at a position radially inside the gas discharge port 203.

[0077] Image analysis is performed on the imaging data of the camera 402 using the image analysis function provided in the control device 6, and it is determined whether or not liquid is adhering to the peripheral portion of the lower surface of the substrate W.

[0078] As schematically shown by the dashed line in FIG. 2, a gas discharge unit 170 may be provided above the first holding unit 110 of the transfer device 16. The gas discharge unit 170 is attached to, for example, a support column that forms part of the elevating mechanism 150 and can move together with the first holding unit 110 and the second holding unit 120. By blowing an inert gas such as nitrogen gas or dry air from the gas discharge unit 170 onto the first holding unit 110 and the second holding unit 120, the liquid (e.g., IPA) adhering to the first holding unit 110 and the second holding unit 120 can be removed.

[0079] <Operation of the substrate processing system> Next, the operation of the substrate processing system 1 will be described. Each operation described below is executed under the control of the control unit 61.

[0080] The transfer device 13 takes out the substrate W accommodated in the carrier C and places it on the delivery unit 14. Subsequently, after the transfer device 16 takes out the substrate W from the delivery unit 14, the taken-out substrate W is carried into the liquid processing unit 17.

[0081] Specifically, the transfer device 16 takes out the substrate W from the delivery unit 14 using the first holding unit 110 (see FIG. 3). Then, the transfer device 16 transports the substrate W from the delivery unit 14 to the liquid processing unit 17 while holding the substrate W by the first holding unit 110.

[0082] Next, the substrate W is subjected to liquid processing in the liquid processing unit 17. Specifically, a chemical solution is supplied to the rotating substrate W to perform wet etching or chemical solution cleaning, and then a rinse solution (e.g., pure water) is supplied to the substrate W to perform a rinse process. Thereafter, IPA is supplied to the upper surface of the substrate W to perform an IPA replacement process (IPA liquid film formation process) in which the rinse solution on the upper surface of the substrate W is replaced with IPA. At the end of the IPA replacement process, by appropriately adjusting the rotation speed of the substrate W and the supply flow rate of IPA, an IPA liquid film L of a predetermined thickness is formed on the upper surface of the substrate W.

[0083] Next, the transfer device 16 takes out the substrate W on which the film L is formed in the liquid processing unit 17. Specifically, as shown in FIG. 12, the substrate W is lifted by raising a plurality of lifter pins 25b of the substrate holding and rotating mechanism 25 of the liquid processing unit 17. Subsequently, the transfer device 16 advances the first holding unit 110 and positions the first holding unit 110 below the substrate W. Next, as shown in FIG. 13, the first holding unit 110 is lifted to remove the substrate W from the lifter pins 25b.

[0084] Next, as shown in FIG. 14, the transfer device 16 advances the second holding unit 120 and positions it below the first holding unit 110. Next, as shown in FIG. 15, the support pins 122 provided on the second holding unit 120 rise to lift the substrate W held by the first holding unit 110. Next, as shown in FIG. 16, the first holding unit 110 retreats and exits the liquid processing unit 17.

[0085] Next, when the support pins 122 descend, the substrate W is held in the recess 121a of the second holding unit 120 as shown in FIG. 5. Specifically, the support pins 122 lower the substrate W to the height of the chuck 123. Then, the chuck 123 advances toward the substrate W to firmly grip the substrate W. Next, the support pins 122 further descend and separate from the substrate W, resulting in the state shown in FIG. 5. Next, the second holding unit 120 also exits the liquid processing unit 17.

[0086] Next, the transfer device 16 transports the substrate W held by the second holding unit 120 to the drying processing unit 18. While the substrate W is held by the second holding unit 120 (including during transportation), gas is discharged from a plurality of discharge ports 124a of the gas supply unit 124 toward the outer peripheral portion of the lower surface of the substrate W. Thereby, it is prevented or at least suppressed that the liquid of the liquid film L formed on the upper surface of the substrate W flows into the lower surface of the substrate W.

[0087] Note that when the liquid treatment of the substrate W is completed in the liquid treatment unit 17, the liquid may already adhere to the lower surface of the substrate W. Whether the liquid adheres to the lower surface of the substrate W can be detected by, for example, a camera 128 provided on the base portion 121 of the second holding portion 120.

[0088] When arriving at the front of the drying treatment unit 18 which is the destination of conveyance, the substrate W is held by the first holding portion 110 according to a procedure reverse to the procedure from FIG. 13 to FIG. 17 described above.

[0089] Subsequently, the procedures executed in the drying treatment unit 18 will be described with reference to FIGS. 11, 12, and FIGS. 18 to 22. Note that FIGS. 18 to 22 are drawn with emphasis on the ease of viewing the drawing, showing the tray 32 of the drying treatment unit 18 moving in the Y direction. Even when the tray 32 moves in the X direction, the individual procedures are substantially the same as those shown in FIGS. 18 to 22.

[0090] First, as shown in FIG. 18, the first holding portion 110 of the transfer device 16 holding the substrate W is inserted into the drying treatment unit 18 through the opening 180 (see FIG. 1) for loading and unloading the substrate W of the drying treatment unit 18. When a shutter is provided at the opening 180, the shutter is opened when the first holding portion 110 and the second holding portion 120 of the transfer device 16 pass through the opening 180, and is closed at other times.

[0091] Next, by raising the lifter pins 39a of the drying treatment unit 18, the substrate W held by the first holding portion 110 is lifted, and the substrate W is supported by the plurality of lifter pins 39a. Instead of this, the substrate W may be supported by the plurality of lifter pins 39a which have been lifted in advance by lowering the first holding portion 110 of the transfer device 16. Next, the transfer device 16 retracts the first holding portion 110 and exits from the drying treatment unit 18 (see FIG. 19).

[0092] Next, as shown in FIG. 20, the substrate W is lowered by lowering the lifter pin 39a until it reaches the height position where the substrate W fits within the liquid receiving portion 300, and is then stopped there. As a result, as shown in FIGS. 10 and 11, the substrate W remains supported by the lifter pin 39a and fits within the liquid receiving cup 302 as the liquid receiving portion 300.

[0093] Next, the peripheral portion of the lower surface of the substrate W is photographed by the camera 402, and it is determined by image analysis whether IPA is attached to the peripheral portion of the lower surface of the substrate W. If IPA is attached, nitrogen gas is blown from the gas discharge port 203 toward the peripheral portion of the lower surface of the substrate W to blow off the IPA and dry the peripheral portion of the lower surface of the substrate W. The blown-off IPA is received by the liquid receiving portion 300. The IPA received by the liquid receiving cup 302 evaporates on the surface of the liquid receiving cup 302 or is discharged from the liquid receiving cup 302 through the liquid receiving groove 311 and the drain hole 310. When it is confirmed by image analysis that IPA is not attached, the blowing of nitrogen gas may not be performed.

[0094] Next, as shown in FIG. 21, the moving mechanisms 305 and 306 are operated to separate the first portion 303 and the second portion 304. Then, by lowering the lifter pin 39a, the substrate W is lowered through the space between the first portion 303 and the second portion 304 and placed on the tray 32. The lifter pin 39a further descends to a standby position (lower limit position) that does not interfere with the movement of the tray 32 and stops there.

[0095] Next, as shown in FIG. 22, the tray 32 supporting the substrate W is advanced and accommodated within the processing container 31.

[0096] Next, a supercritical drying process of the substrate W supported on the tray 32 is performed within the processing container 31 by a known method.

[0097] Next, the tray 32 supporting the dried substrate W is pulled out from the processing container 31. Next, the lifter pin 39a rises, whereby the substrate W on the tray 32 is lifted and passes between the first part 303 and the second part 304 of the liquid receiving part 300 in a separated state, and rises to the delivery position.

[0098] Next, in a procedure reverse to the procedure described with reference to FIGS. 18 and 19 above, the substrate W on the lifter pin 39a is held by the first holding part 110 of the transfer device 16. Thereafter, the first holding part 110 exits from the drying processing unit 18. Thereafter, the transfer device 16 places the substrate W on the delivery part 14, and then the transfer device 13 takes out the substrate W from the delivery part 14 and returns it to the carrier C. Thereby, a series of processes for one substrate W is completed.

[0099] According to the above embodiment, it is confirmed whether IPA adheres to the lower surface of the substrate W immediately before the substrate W is placed on the tray 32 (if IPA adheres, drying of IPA is also performed). For this reason, it is possible to almost eliminate the possibility that the substrate W is accommodated in the processing container 31 with IPA adhering to the lower surface of the substrate W.

[0100] It is also conceivable to provide a substrate lower surface wetness detection part (camera) and a substrate lower surface drying part (nitrogen gas nozzle) on the tray 32. However, it is not easy to provide a camera or sensors that can withstand a high-pressure environment on the tray 32, and even if it were possible, high costs would be expected. Also, it is not easy to incorporate the substrate lower surface drying part (nozzle and gas supply system) into the tray 32 so as not to be adversely affected by the supercritical processing fluid, and even if it were possible, high costs would be expected. Further, if the liquid (IPA) on the lower surface of the substrate W is blown off after the substrate W is placed on the tray 32, the tray 32 may be contaminated by the blown-off liquid. Considering the above, the configuration of the present embodiment in which wetness detection of the substrate lower surface and drying of the substrate lower surface are performed in the liquid receiving part 300 immediately before the substrate W is placed on the tray 32 is considered to be very preferable.

[0101] As a modified embodiment of the above-described embodiment, the following configurations and / or operations can be adopted.

[0102] As shown in FIG. 23, instead of the lifter pin 39a described above, a lifting shaft 39c, a lifting mechanism 39d for lifting the lifting shaft 39c, and a suction pad 39e provided at the upper end of the lifting shaft 39c may be provided. The tray 32 is provided with a through hole 32f through which the suction pad 39e can pass. In this configuration, the substrate W is lifted in a state of being vacuum-sucked by the suction pad 39e.

[0103] When using the suction pad 39e, a rotation mechanism for rotating the lifting shaft 39c may be additionally provided in the lifting mechanism 39d. In other words, a lifting and rotation mechanism may be provided instead of the lifting mechanism 39d. In this case, the substrate W may be rotated at a low speed such that the IPA forming the liquid film on its upper surface does not spill.

[0104] By inspecting the lower surface of the substrate W while rotating the substrate W, for example, even if the number of cameras 402 is one, the entire circumference of the peripheral portion of the lower surface of the substrate W can be inspected. If a drying process is performed on the lower surface of the substrate W while rotating the substrate W, uniform drying can be achieved even if the number of gas discharge ports 203 is reduced. Further, by separating the camera 402 and the gas discharge port 203 (by arranging them at different circumferential positions), it is possible to prevent the liquid blown off by the gas from directly adhering to the camera 402.

[0105] As the substrate bottom wetting detection unit 400, for example, as schematically shown in FIG. 24, a reflection type detection unit 403 may be provided. The reflection type detection unit 403 includes a number of detection elements arranged in a circumferential array below the peripheral edge of the substrate W. Each detection element has a light irradiation unit that irradiates inspection light from below the substrate W to the peripheral edge of the lower surface of the substrate W, and a light receiving unit that receives the inspection light reflected by the lower surface of the substrate W. The reflection type detection unit 403 is divided into two or more (two in the illustrated example) so that the lifting of the substrate W is not obstructed by the detection unit 403, and can be moved closer to and away from each other by a drive mechanism 404. The points of division and the points where they can be moved closer to and away from each other are the same as those of the liquid receiving unit 300 described above.

[0106] The light receiving unit of the reflection type detection unit 403 transmits, for example, a signal corresponding to the intensity of the received light. Based on this signal, data analysis is performed by, for example, the control device 6, and it is determined whether or not liquid is attached to the peripheral edge of the lower surface of the substrate W.

[0107] The reflection type detection unit 403 may be an inspection device such as a laser displacement meter. When there are IPA droplets at the peripheral edge of the lower surface of the substrate W, for example, the detection distance becomes locally smaller at the location of the droplets. By utilizing this, the presence of the droplets can be detected.

[0108] As the substrate bottom wetting detection unit 400, for example, as schematically shown in FIG. 25, a transmission type detection unit may be provided. The transmission type detection unit has a light irradiation unit 405 arranged above the peripheral edge of the substrate W and a light receiving unit 406 arranged below the peripheral edge of the substrate W. The light receiving unit 406 has a number of light receiving elements arranged in a circumferential array below the peripheral edge of the substrate W. The configuration of the light irradiation unit 405 is arbitrary as long as light with a uniform intensity can be irradiated over the entire circumference of the peripheral edge of the upper surface of the substrate W. Each of the light irradiation unit 405 and the light receiving unit 406 is divided into two or more (two in the illustrated example) so as not to obstruct the lifting of the substrate W, and can be moved closer to and away from each other by drive mechanisms 407 and 408. The points of division and the points where they can be moved closer to and away from each other are the same as those of the liquid receiving unit 300 described above.

[0109] The light receiving part 406 of the transmissive detection part transmits a signal according to, for example, the intensity of the received light. Based on this signal, data analysis is performed by, for example, the control device 6, and it is determined whether or not liquid is adhering to the peripheral part of the lower surface of the substrate W.

[0110] Since the lower surface wetting detection part 400 shown in FIGS. 24 and 25 needs to have the reflective detection part 403 and the light receiving part 406 provided directly below the periphery of the substrate W, it is preferably provided separately from the lower surface drying part 200 and the liquid receiving part 300. The lower surface wetting detection part 400 shown in FIG. 24 can be provided, for example, above the liquid receiving part 300 at a distance from the liquid receiving part 300. By doing so, the liquid blown off by the lower surface drying part 200 will not wet the reflective detection part 403 and the light receiving part 406. In this case, the lower surface wetting detection part 400 first inspects whether or not liquid is adhering to the lower surface of the substrate W. And when liquid is adhering, the substrate W is accommodated in the liquid receiving part 300 with the lower surface drying part 200, and the lower surface of the substrate W is dried. When no liquid is adhering, the liquid receiving part 300 can be separated into two, and the substrate W can be passed through the liquid receiving part 300 and placed on the tray 32.

[0111] If countermeasures against liquid adhesion to the lower surface wetting detection part 400 (for example, nitrogen gas purge, etc.) are taken, the lower surface wetting detection part 400 shown in FIGS. 24 and 25 may be incorporated into the liquid receiving part 300. When incorporating the lower surface wetting detection part 400 shown in FIGS. 24 and 25 into the liquid receiving part 300, the reflective detection part 403 and the light receiving part 406 can be installed on or embedded in the upper surface of the bottom wall 307 of the liquid receiving cup 302. The light irradiation part 405 can be attached, for example, to the upper end part of the side wall 308 of the liquid receiving cup 302. In this case, the drive mechanisms 404, 407, 408 are not necessary.

[0112] As shown in FIG. 26, the liquid receiving portion 300 may be provided at a height position lower than that of the tray 32. In this case, as shown in FIG. 27, one or more slits 32e can be provided in the tray 32 so that the opening and closing of the tray 32 (advancing and retreating with respect to the processing container 31) is not obstructed by the lifter pin 39a.

[0113] The procedure until the substrate W is accommodated in the processing container 31 when the configuration of FIG. 26 is adopted will be briefly described below.

[0114] First, the first holding portion 110 of the transfer device 16 that has entered the drying processing unit 18 places the substrate W on the lifter pin 39a at the upper limit position (the height position shown in FIG. 26) and exits from the liquid processing unit 17. Next, the lifter pin 39a descends and accommodates the substrate W in the liquid receiving portion 300. At this time, the tray 32 is retracted to the retracted position (the horizontal position shown in FIG. 26) so as not to obstruct the descent of the substrate W. Whether or not liquid adheres to the lower surface of the substrate W is inspected by the substrate lower surface wetness detection unit 400 in the liquid receiving portion 300, and if liquid adheres, the liquid is removed by the substrate lower surface drying unit 200.

[0115] Next, the lifter pin 39a raises the substrate W to a height position slightly higher than that of the tray 32, and then the tray 32 advances toward the processing container 31. As a result, the lifter pin 39a passes through the slit 32e. Next, the lifter pin 39a descends and places the substrate W at a predetermined position on the tray 32. The lifter pin 39a further descends to the lower limit position, whereby the lifter pin 39a escapes from the slit 32e. Next, the tray 32 further advances, whereby the tray 32 on which the substrate W is placed is accommodated in the processing container 31.

[0116] As shown in FIG. 28, the drying processing unit 18 may not include the movable tray 32. In this case, a substrate holding structure 31a (substrate holding portion) is provided in the processing container 31, and the first holding portion 110 of the transfer device 16 directly places the substrate W on the substrate holding structure. Instead of the lid 33 connected to the tray 32, a lid 33b is provided on the processing container 31.

[0117] In the embodiment of FIG. 28, first, the first holding portion 110 of the transfer device 16 that has entered the drying processing unit 18 places the substrate W on the lifter pin 39a at the upper limit position (the height position shown in FIG. 28), and exits from the liquid processing unit 17. Next, the lifter pin 39a descends, and the substrate W is accommodated in the liquid receiving portion 300. In the liquid receiving portion 300, it is inspected by the lower surface wetness detection portion 400 of the substrate whether or not liquid is attached to the lower surface of the substrate W. If liquid is attached, the liquid is removed by the lower surface drying portion 200 of the substrate.

[0118] Next, the lifter pin 39a that supports the substrate W rises to the upper limit position, and the first holding portion 110 of the transfer device 16 that has entered the drying processing unit 18 again receives the substrate W from the lifter pin 39a. Then, the first holding portion 110 carries the substrate W into the processing container 31, places the substrate W on the substrate holding structure 31a (substrate holding portion) provided in the processing container 31, and then exits from the liquid processing unit 17. Next, the processing container 31 is sealed by the lid body 33b.

[0119] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and gist of the appended claims.

[0120] The substrate is not limited to a semiconductor wafer, and may be other types of substrates used in the manufacture of semiconductor devices such as glass substrates and ceramic substrates.

Explanation of Reference Numerals

[0121] W Substrate 16 Substrate transfer unit (transfer device) 18 Drying processing unit 181 Drying area 182 Delivery area 39a, 39c, 39e Substrate support member 200 Substrate lower surface drying unit

Claims

1. A substrate transfer unit that transfers a substrate with its upper surface wetted with a processing liquid, A drying unit that dries the substrate wetted with the processing liquid, Comprising, The drying unit, A transfer area where the substrate is transferred between the substrate transfer unit, A drying area where the upper surface of the substrate is dried, and has, In the transfer area, A substrate support member that supports the substrate received from the substrate transfer unit in a horizontal posture, A substrate lower surface drying unit that dries the lower surface of the substrate by blowing gas onto the lower surface of the substrate supported by the substrate support member, A liquid receiving unit that receives the processing liquid detached from the lower surface of the substrate during drying of the lower surface of the substrate by the substrate lower surface drying unit, Is provided, a substrate processing apparatus.

2. Further provided with a substrate lower surface wetting detection unit provided in the transfer area for detecting whether the lower surface of the substrate carried into the transfer area by the substrate transfer unit is wet, When the lower surface of the substrate is wet with the processing liquid, the substrate lower surface drying unit blows gas onto the lower surface of the substrate supported by the substrate support member, the substrate processing apparatus according to claim 1.

3. The substrate processing apparatus according to claim 2, wherein the liquid receiving unit integrates the substrate lower surface wetting detection unit and the substrate lower surface drying unit.

4. A substrate transfer unit that transfers a substrate with its upper surface wetted with a processing liquid, A drying unit that dries the substrate wetted with the processing liquid, Comprising, The drying unit, A transfer area where the substrate is transferred between the substrate transfer unit, A drying area where the upper surface of the substrate is dried, and has, In the transfer area, A substrate support member that supports the substrate received from the substrate transfer unit in a horizontal posture, A substrate lower surface drying unit that dries the lower surface of the substrate by blowing gas onto the lower surface of the substrate supported by the substrate support member, Is provided, Further provided with a lifting mechanism for lifting and lowering the substrate support member, whereby the substrate support member can be lifted and lowered within the transfer area while supporting the substrate, a substrate processing apparatus.

5. The drying unit has a processing container in which the drying process of the substrate is performed, and a substrate holding unit that supports the substrate in the processing container, The substrate holding unit is movable horizontally between an outer position outside the processing container and within the transfer area and an inner position within the processing container. The substrate holding portion has a through hole that penetrates the substrate holding portion in the vertical direction. The substrate support member is located above the substrate holding portion, and is movable in the vertical direction between a first height position where the substrate is transferred between the substrate support member and the substrate transfer portion, and a second height position below the substrate holding portion. The substrate lower surface drying portion is provided so as to be able to dry the lower surface of the substrate supported by the substrate support member at a third height position between the first height position and the second height position. The substrate processing apparatus according to claim 4.

6. The substrate processing apparatus according to claim 5, further comprising a liquid receiving portion that is provided in the transfer area and receives the processing liquid detached from the lower surface of the substrate supported by the substrate support member at the third height position when the substrate is dried by the substrate lower surface drying portion.

7. The substrate processing apparatus according to claim 6, wherein the liquid receiving portion has a through hole that penetrates the liquid receiving portion in the vertical direction and through which the substrate support member can pass.

8. The substrate processing apparatus according to claim 6 or 7, wherein the liquid receiving portion has a first portion and a second portion that can be separated and engaged, and when the first portion and the second portion are separated, the substrate support member supporting the substrate can pass through the gap formed between the first portion and the second portion in the vertical direction.

9. The substrate processing apparatus according to claim 8, wherein the liquid receiving portion has a ring shape in plan view or has a cup shape as a whole.

10. The substrate processing apparatus according to any one of claims 4 to 9, wherein the substrate support member includes a plurality of lift pins that can be lifted and lowered, and each lift pin supports the lower surface of the substrate by its upper end.

11. The substrate processing apparatus according to any one of claims 4 to 9, wherein the substrate support member has a lift shaft that can be lifted and lowered, and a suction pad provided at the upper end of the lift shaft, and the suction pad supports the substrate by sucking the lower surface of the substrate.

12. The substrate processing apparatus according to claim 11, further comprising a rotation mechanism that rotates the lift shaft around a vertical axis.

13. The substrate processing apparatus according to any one of claims 1 to 12, wherein the drying processing unit is configured to remove the processing liquid from the substrate using a processing fluid in a supercritical state to dry the substrate.

Images