Stage apparatus, lithographic apparatus, and method of manufacturing an article

Abstract

To provide a stage device advantageous for holding a substrate in high flatness.SOLUTION: A stage device for holding a substrate includes: a substrate-holding part having a holding plane for holding the substrate; a driving mechanism for passing the substrate to the holding plane; and a control part for determining a driving profile of the substrate in a height direction of the substrate by the driving mechanism so that the substrate is passed to the holding plane in such a state where the warpage of the substrate is corrected on the basis of warpage information about warpage of the substrate measured in such a state where the substrate is supported by a support plane smaller than the holding plane.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to a stage device, a lithography apparatus, and a method for manufacturing an article.

Background Art

[0002] When manufacturing various devices such as semiconductor elements and liquid crystal display elements, an exposure apparatus is used that illuminates a master plate (mask or reticle) with an illumination optical system and projects the pattern of the master plate onto a substrate (wafer) via a projection optical system. In the exposure apparatus, in order to transfer a pattern onto such a substrate while holding the substrate on a chuck (substrate holding member), it is required to reduce the distortion of the substrate when passing or sucking the substrate onto the chuck, and techniques related thereto have been proposed (see Patent Document 1). For example, Patent Document 1 discloses a technique for holding (adsorbing) such a substrate with good flatness and reducing the distortion of the substrate (in-plane) by providing a roughness absorbing member on the chuck even for a substrate with a large back surface roughness.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the prior art, when the substrate is warped, if the substrate is passed to the chuck (substrate holding member), the substrate is adsorbed in a warped state, resulting in distortion of the substrate.

[0005] In view of such problems of the prior art, an exemplary object of the present invention is to provide a stage device that is advantageous for holding a substrate with high flatness.

Means for Solving the Problems

[0006] To achieve the above object, a stage device according to one aspect of the present invention is a stage device for holding a substrate, comprising a substrate holding portion having a holding surface for holding the substrate, a drive mechanism for placing the substrate on the holding surface, and a control unit for controlling the driving of the drive mechanism in the height direction based on the warpage information regarding the warpage of the substrate measured in a state where the substrate is supported by a support surface smaller than the holding surface. to control the pressure in the space between the substrate and the holding surface and a control unit, The control unit wherein the warpage of the substrate is reduced before the substrate is placed on the holding surface. such that , controls the pressure in the space which is characterized by the above.

[0007] A further object or other aspect of the present invention will be clarified by the embodiments described below with reference to the accompanying drawings.

Advantages of the Invention

[0008] According to the present invention, for example, a stage device advantageous for holding a substrate with high flatness can be provided.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential for the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0011] FIG. 1 is a schematic diagram showing the configuration of an exposure apparatus 1 as one aspect of the present invention. The exposure apparatus 1 is a lithography apparatus used in a photolithography process which is a device manufacturing process. In the present embodiment, the exposure apparatus 1 forms a pattern on a substrate by exposing the substrate through a projection optical system. The exposure apparatus 1 includes an illumination optical system 11, a reticle stage 12, a projection optical system 13, a substrate stage 14, a substrate transfer system 15, a chuck 20, a measurement unit 24, and a control unit 25.

[0012] The illumination optical system 11 illuminates a reticle (mask or reticle) R held on the reticle stage 12 with light (exposure light) from a light source (not shown). The projection optical system 13 projects the light from the reticle R onto a substrate W held on the substrate stage 14. The substrate transfer system 15 has a function of transferring the substrate W, and includes, for example, a supply hand 16 for supplying the substrate W to the substrate stage 14 and a recovery hand 17 for recovering the substrate W from the substrate stage 14.

[0013] The substrate stage 14 is a stage that holds and is movable with the substrate W. The substrate stage 14 includes a fine movement stage 18 and a coarse movement stage 19. On the fine movement stage 18, a chuck 20 that adsorbs and holds the back surface of the substrate W is disposed. The chuck 20 is a substrate holding member having a chuck surface (holding surface) 20A for adsorbing (holding) the substrate W.

[0014] The fine stage 18 is configured to be independently movable along each of the X, Y, and Z directions and independently rotatable about axes parallel to each of the X, Y, and Z directions. Note that the X-axis, Y-axis, and Z-axis are defined in directions perpendicular to each other as shown in FIG. 1. The laser interferometer 21 and the flat mirror 22 function as measuring instruments for measuring the position of the fine stage 18. The position of the fine stage 18 can be determined from the result obtained by the laser interferometer 21 (the displacement amount of the fine stage 18). By moving the fine stage 18, the position of the substrate W can be adjusted in the direction along the optical axis AX of the projection optical system 13 (Z direction) and in the directions perpendicular to the optical axis AX (X direction and Y direction).

[0015] The pin member 23 is a holding member that is used when receiving the substrate W from the supply hand 16 or delivering the substrate W to the recovery hand 17, and adsorbs the back surface of the substrate W to hold the substrate W. The pin member 23 is disposed (fixed) on the coarse stage 19 and is provided so as to be able to protrude from the chuck 20 through a hole provided in the chuck 20 in the Z direction (the direction perpendicular to the chuck surface 20A of the chuck 20).

[0016] The coarse stage 19 is configured to be independently movable along each of the X and Y directions and rotatable about an axis parallel to the Z direction. The position of the coarse stage 19 is measured by, for example, a laser interferometer, a flat mirror, or a gap sensor, and is controlled in synchronization with the movement of the fine stage 18 via an actuator such as a linear motor. Since the pin member 23 is fixed to the coarse stage 19 as described above, it moves together with the coarse stage 19.

[0017] The coarse stage 19 can move with a long stroke in the X and Y directions within a range defined by a limit sensor (not shown). On the other hand, the fine stage 18 is supported by the coarse stage 19 and can move with a shorter stroke than the coarse stage 19 in the X and Y directions.

[0018] The measuring unit 24 measures the position of the chuck 20 in the Z direction. The measuring unit 24 is composed of, for example, a laser interferometer, a plane mirror, a gap sensor, etc., but is not limited thereto, and any configuration capable of measuring the position of the chuck 20 may be used.

[0019] The control unit 25 is composed of a computer including a CPU, a memory, etc., and controls the overall (operation) of the exposure apparatus 1 according to the program stored in the memory. In the exposure process, the control unit 25 controls each part of the exposure apparatus 1 so that the pattern of the original plate R is transferred to each shot area of the substrate W according to the exposure order and shot array defined in the recipe. Further, when the substrate W is supplied or recovered, the control unit 25 controls the process of passing the substrate W adsorbed on the chuck 20 to the pin member 23 or the process of passing the substrate W adsorbed on the pin member 23 to the chuck 20 via the fine movement stage 18.

[0020] In the exposure process of transferring the pattern of the original plate R to the substrate W, the substrate W is exposed while moving the fine movement stage 18 with the chuck 20 adsorbing the substrate W. When recovering the exposed substrate W, the fine movement stage 18 is moved downward (-Z direction) so as not to interfere with the recovery hand 17, and the substrate W adsorbed on the chuck 20 is passed to the pin member 23, and such substrate W is adsorbed by the pin member 23.

[0021] The fine movement stage 18 is provided with a ventilation line (not shown) for applying an adsorption force for adsorbing the chuck 20, and the fine movement stage 18 adsorbs the back surface of the chuck 20 to hold the chuck 20. Further, the fine movement stage 18 is also provided with a ventilation line 26 for applying an adsorption force to the substrate W placed on the chuck 20.

[0022] The ventilation line 26 is a pipe configured to communicate a vacuum pump 27 that generates negative pressure and a ventilation hole 201 provided in the chuck 20. The vacuum pump 27 discharges the gas (air) inside the ventilation line 26 to the outside, thereby making the pressure inside the ventilation line 26 lower than atmospheric pressure, that is, negative pressure. When the pressure inside the ventilation line 26 (the pressure inside) becomes negative pressure, the pressure inside the ventilation hole 201 (which communicates with the ventilation line 26) also becomes negative pressure. Due to the differential pressure between such negative pressure and atmospheric pressure acting on the surface of the substrate W placed on the chuck 20 (including the ventilation hole 201), the chuck 20 can adsorb (hold) the substrate W.

[0023] A regulator 28 for adjusting the inside of the ventilation line 26 to a predetermined pressure (vacuum pressure) is provided between the vacuum pump 27 and the ventilation hole 201. A solenoid valve 29 is provided between the regulator 28 and the ventilation hole 201. By opening and closing (switching) the solenoid valve 29, the ventilation line 26 on the side of the ventilation hole 201 from the solenoid valve 29 can be put in a state connected to the vacuum pump 27 or a state of being released to the atmosphere. The solenoid valve 29 can be controlled by the control unit 25.

[0024] A pressure sensor 30 is provided at a position branched from the ventilation line 26 between the solenoid valve 29 and the ventilation hole 201. The pressure sensor 30 measures the value of the pressure (pressure value) inside the ventilation line 26 and outputs (notifies) the measurement result to the control unit 25.

[0025] As described above, the pin member 23 is arranged on the coarse movement stage 19 and has a cylindrical shape, that is, a hollow shape. The pin member 23 is provided with a ventilation line 31 for applying an adsorption force to the substrate W placed on the pin member 23.

[0026] The ventilation line 31 is a pipe configured to communicate a vacuum pump 32 that generates a negative pressure with the inside (space) of the pin member 23. The vacuum pump 32 discharges the gas (air) inside the ventilation line 31 to the outside, thereby making the pressure inside the ventilation line 31 lower than the atmospheric pressure, that is, a negative pressure. When the pressure inside the ventilation line 31 becomes a negative pressure, the pressure inside the pin member 23 that communicates with the ventilation line 31 also becomes a negative pressure. When the differential pressure between such a negative pressure and the atmospheric pressure is applied to the surface of the substrate W placed on the pin member 23, the pin member 23 can adsorb (hold) the substrate W.

[0027] A regulator 33 for adjusting the inside of the ventilation line 31 to a predetermined pressure (vacuum pressure) is provided between the vacuum pump 32 and the pin member 23. A solenoid valve 34 is provided between the regulator 33 and the pin member 23. By opening and closing (switching) the solenoid valve 34, the ventilation line 31 on the side of the pin member 23 from the solenoid valve 34 can be put in a state connected to the vacuum pump 32 or a state of being released to the atmosphere. The solenoid valve 34 can be controlled by the control unit 25.

[0028] A pressure sensor 35 is provided at a position branched from the ventilation line 31 between the solenoid valve 34 and the pin member 23. The pressure sensor 35 measures the value of the pressure inside the ventilation line 31 (pressure value) and outputs (notifies) the measurement result to the control unit 25.

[0029] In this embodiment, the configuration in which the exposure apparatus 1 has two vacuum pumps 27 and 32 has been described as an example, but it is not limited thereto. For example, the two vacuum pumps 27 and 32 may be configured as one common vacuum pump. Further, a vacuum pump may be configured for each of the pin members 23 and each of the ventilation holes 201 of the chuck 20.

[0030] Referring to FIG. 2, the detailed configuration of the chuck 20 will be described. FIG. 2 is a plan view showing the configuration of the chuck 20 from above. The chuck 20 includes a plurality of pins for supporting the substrate W, and the substrate W is placed on such a plurality of pins. Therefore, a chuck surface 20A for holding the substrate W is defined by the plurality of pins provided on the chuck 20. The chuck 20 includes embankments 202 and 203 for preventing gas (air) from flowing out to the outside of the chuck 20 when the substrate W is (vacuum) adsorbed. The embankments 202 and 203 are configured such that their uppermost surfaces are on substantially the same plane.

[0031] With the substrate W placed on the plurality of pins provided on the chuck 20, the vacuum pump 27 is operated to make the pressure inside the ventilation line 26 communicated with the ventilation hole 201 negative pressure. Thereby, through the ventilation hole 201, in the region inside the embankment 202 and the region outside the embankment 203, the space between the substrate W and the plurality of pins becomes a vacuum state, so that the chuck 20 can adsorb the substrate W with a uniform force.

[0032] Further, as described above, the chuck 20 is provided with a hole (through hole) 204 for enabling the pin member 23 to protrude. Similarly, the fine movement stage 18 is also provided with a hole (through hole) for enabling the pin member 23 to protrude. Therefore, the fine movement stage 18 can move in the protruding direction of the pin member 23, that is, the Z direction, without interfering with the pin member 23.

[0033] In the present embodiment, a configuration having three pin members 23 has been described as an example, but the present invention is not limited thereto. As long as it is a configuration that can hold the substrate W sufficiently and stably (such as the size, material, and mass of the substrate W), the number of pin members 23 can be any number. Note that the pin member 23 has a smaller adsorption area of the substrate W compared to the chuck 20 because the area of the region for adsorbing the back surface of the substrate W (adsorption area) is the area of the region inside the embankment 203.

[0034] In addition, in this embodiment, the configuration in which the chuck 20 vacuum-sucks the substrate W has been described as an example, but the present invention is not limited thereto. For example, the chuck 20 may be configured as an electrostatic chuck that adsorbs the substrate W by the Coulomb force generated between the electrode and the substrate W by applying a voltage.

[0035] In this embodiment, as shown in FIG. 1, the exposure apparatus 1 has an acquisition unit 40 that acquires warpage information regarding the warpage of the substrate W. The substrate W is transported, for example, from a substrate loading / unloading position (handover position) such as a hooper or a coater developer, an in-line, etc. to the acquisition unit 40 via a substrate transport unit. In this embodiment, the acquisition unit 40 measures the warpage of the substrate W and acquires warpage information regarding such warpage in advance (before holding the substrate W on the substrate stage 14). Then, the substrate W is transported from the acquisition unit 40 to the substrate stage 14 via the substrate transport system 15, specifically, the supply hand 16, and is held on the substrate stage 14.

[0036] In this embodiment, as described above, the acquisition unit 40 has a function of measuring the warpage of the substrate W, and includes, for example, a stage 41, a laser displacement meter 42, and a processing unit 43.

[0037] The stage 41 has a support surface 41A that supports the substrate W, and is a support member that supports (holds) the substrate W placed on the support surface 41A. Since the support surface 41A (area) of the stage 41 is smaller than the chuck surface 20A (area) of the chuck 20, the stage 41 can support the substrate W with a smaller restraining force than the chuck 20. Therefore, the restraint state of the substrate W supported by the support surface 41A of the stage 41 becomes weaker than the restraint state of the substrate W held by the chuck surface 20A of the chuck 20.

[0038] The laser displacement meter 42 is a measuring unit that is provided above the stage 41 and measures the position in the height direction (Z direction) of the substrate W supported on the support surface 41A of the stage 41. The laser displacement meter 42 irradiates the substrate W with laser light and forms an image of the reflected light from the substrate W on the sensor, thereby determining the height level of the substrate W (its surface). In this embodiment, the position of the laser displacement meter 42 is fixed. Therefore, by rotationally driving the stage 41 with the substrate W supported on the support surface 41A with respect to the laser displacement meter 42, the overall height level of the substrate W is determined.

[0039] In this embodiment, it is assumed that a plurality of laser displacement meters 42 are provided above the stage 41, but the number of laser displacement meters 42 is not limited, and only one laser displacement meter 42 may be provided. Further, the measuring unit that measures the position in the height direction of the substrate W supported on the support surface 41A of the stage 41 is not limited to the laser displacement meter 42, and for example, it may be a line sensor. The position in the height direction of the substrate W may be measured using a contact-type measuring instrument using a dial gauge or an optical flat.

[0040] The processing unit 43 includes a CPU, a memory, etc., and is a unit for recognizing the shape of the substrate W, specifically, the warp of the substrate W. The processing unit 43 recognizes the warp of the substrate W and obtains warp information based on the position of the substrate W in the height direction measured by the laser displacement meter 42, that is, the overall height level of the substrate W. The processing unit 43 recognizes the shape and magnitude of the warp of the substrate W as the warp of the substrate W from the overall height level of the substrate W. Therefore, the warp information includes information indicating the shape of the warp of the substrate W and information indicating the magnitude of the warp of the substrate W. In addition, the shape of the warp of the substrate W includes a dome shape, a so-called downward convex shape, and an upward convex shape. The downward convex shape is a shape in which the outer peripheral portion of the substrate W warps in the +Z direction from the central portion of the substrate W, and is a shape that is convex downward with respect to the chuck surface 20A of the chuck 20. The upward convex shape is a shape in which the outer peripheral portion of the substrate W warps in the -Z direction from the central portion of the substrate W, and is a shape that is convex upward with respect to the chuck surface 20A of the chuck 20. However, the shape of the warp of the substrate W is not limited to the downward convex shape or the upward convex shape, and includes a saddle shape, a tunnel shape, and many other shapes, and the processing unit 43 can recognize any shape as the shape of the warp of the substrate W.

[0041] In this way, the acquisition unit 40 acquires warp information regarding the warp of the substrate W measured while being supported by the support surface 41A of the stage 41 smaller than the chuck surface 20A of the chuck 20. In this embodiment, in order to determine the overall height level of the substrate W, the stage 41 that supports the substrate W on the support surface 41A is rotationally driven with respect to the laser displacement meter 42. However, the stage 41 that supports the substrate W on the support surface 41A may be driven in the X direction and the Y direction. It is also possible to determine the overall height of the substrate W by rotationally driving the laser displacement meter 42 or driving it in the X direction and the Y direction with respect to the stage 41 that supports the substrate W on the support surface 41A.

[0042] In this embodiment, the warp of the substrate W is measured while the substrate W is supported by the stage 41 (support surface 41A), but the present invention is not limited thereto. As long as the substrate W is supported (held) on a surface smaller than the chuck surface 20A of the chuck 20, for example, the warp of the substrate W may be measured while the substrate W is held by the pre-alignment unit or the supply hand 16. Further, a laser displacement meter 42 may be provided above the substrate stage 14, and the warp of the substrate W may be measured while the substrate W is held by the pin member 23.

[0043] In this embodiment, a configuration in which the warp of the substrate W is measured inside the exposure apparatus 1 to obtain warp information has been described as an example. However, the warp of the substrate W may be measured outside the exposure apparatus 1 to obtain warp information. In this case, the acquisition unit 40 acquires warp information regarding the warp of the substrate W from an external measurement device that measures the warp of the substrate W supported on a surface smaller than the chuck surface 20A of the chuck 20.

[0044] In this embodiment, in order to obtain warp information regarding the warp of the substrate W, the warp of the substrate W is actually measured. However, the warp of the substrate W may be predicted. For example, it is possible to predict the warp of the substrate W from the characteristics of the change in the suction pressure when the stage 41, the pin member 23, the stage of the external measurement device, etc. adsorb the substrate W. In this case, since a measuring instrument for measuring the warp of the substrate W becomes unnecessary, the configuration for obtaining the warp information can be made into a simple configuration. Further, when parameters indicating the shape of the warp of the substrate W have been acquired in advance, the warp information regarding the warp of the substrate W may be obtained by providing such parameters to the acquisition unit 40.

[0045] With reference to FIGS. 3(a), 3(b), 3(c), and 3(d), a process of passing the substrate W adsorbed (held) by the pin member 23 to the chuck 20 and adsorbing the substrate W with the chuck surface 20A of the chuck 20 will be described. Such a process is performed by the control unit 25 comprehensively controlling each part of the exposure apparatus 1.

[0046] First, move the substrate stage 14 in the X and Y directions (horizontal directions) to position the substrate stage 14 at a position where the supply hand 16 can supply the substrate W. Then, transfer the substrate W from the supply hand 16 to the pin member 23, and as shown in FIG. 3(a), the substrate W is adsorbed by the pin member 23.

[0047] Next, as shown in FIG. 3(b), move the fine adjustment stage 18 in the +Z direction at the first speed (raise it) so that the substrate W adsorbed by the pin member 23 is positioned near the chuck 20. In this way, the fine adjustment stage 18 functions as a drive unit that relatively drives the chuck 20 and the pin member 23 along the protruding direction (Z direction) of the pin member 23 so as to change the relative positional relationship between the chuck 20 (chuck surface 20A) and the pin member 23.

[0048] Next, move the fine adjustment stage 18 in the +Z direction at a second speed slower than the first speed until the back surface of the substrate W adsorbed by the pin member 23 contacts the chuck surface 20A of the chuck 20. Also, while moving the fine adjustment stage 18 at the second speed, from before the substrate W contacts the chuck surface 20A, make the vent hole 201 provided in the chuck 20 negative pressure to generate a negative pressure (adsorption force) between the substrate W and the chuck surface 20A.

[0049] FIG. 3(c) shows a state in which the back surface of the substrate W adsorbed by the pin member 23 is also adsorbed by the chuck surface 20A, and the substrate W is adsorbed by both the pin member 23 and the chuck 20. In this way, by simultaneously adsorbing the substrate W by both the pin member 23 and the chuck 20, it is possible to reduce (prevent) the displacement of the substrate W when transferring it from the pin member 23 to the chuck 20.

[0050] Next, as shown in FIG. 3(d), by further moving the fine adjustment stage 18 in the +Z direction, the adsorption of the substrate W by the pin member 23 is released. As a result, the substrate W is in a state of being adsorbed (held) only by the chuck 20 (chuck surface 20A), and the substrate W is transferred from the pin member 23 to the chuck 20.

[0051] In this embodiment, the substrate W is transferred from the pin member 23 to the chuck 20 by moving the fine movement stage 18 (chuck 20) in the +Z direction, but it is not limited thereto. For example, the substrate W may be transferred from the pin member 23 to the chuck 20 by moving (lowering) the pin member 23 in the -Z direction. Further, the substrate W may be transferred from the pin member 23 to the chuck 20 by relatively moving both the pin member 23 and the fine movement stage 18 (chuck 20) in the Z direction.

[0052] As described above, in this embodiment, the pin member 23 and the fine movement stage 18 that moves the chuck 20 along the Z direction (i.e., functions as a driving unit that relatively drives the chuck 20 and the pin member 23) constitute a driving mechanism for transferring the substrate W to the chuck surface 20. As described above, the unit that moves the pin member 23 in the Z direction may function as a driving unit that relatively drives the chuck 20 and the pin member 23 instead of the fine movement stage 18. Further, the unit that moves the pin member 23 in the Z direction may be used in combination with the fine movement stage 18 to function as a driving unit that relatively drives the chuck 20 and the pin member 23.

[0053] Here, referring to FIGS. 4(a) and 4(b), problems that occur when transferring such a substrate W having warpage from the pin member 23 to the chuck 20 will be described. For example, as shown in FIG. 4(a), when the warpage shape of the substrate W is a downward convex shape, the chuck 20 (chuck surface 20A) starts to adsorb from the central portion of the substrate W, and then adsorbs the remaining portion of the substrate W. The substrate W is forced to be substantially flat with respect to the chuck surface 20A by the adsorption force of the chuck 20, but distortion occurs in the substrate W because the adsorption starts from the central portion of the substrate W. On the other hand, as shown in FIG. 4(b), when the warpage shape of the substrate W is an upward convex shape, the chuck 20 starts to adsorb from the outer peripheral portion of the substrate W, and then adsorbs the remaining portion of the substrate W. Therefore, distortion occurs in the substrate W as in the case where the warpage shape of the substrate W is a downward convex shape.

[0054] Also, if the substrate W has warpage, a part of the substrate W will come into contact with the chuck surface 20A of the chuck 20 first. However, since the contact area is small, the surface pressure increases, and the chuck surface 20A is likely to be worn (damaged).

[0055] When passing the substrate W from the pin member 23 to the chuck 20, a negative pressure is generated between the substrate W and the chuck 20 due to the vent hole 201 provided in the chuck 20 becoming a negative pressure. Also, a positive pressure is generated between the substrate W and the chuck 20 due to the wind pressure caused by the movement (moving speed) of the fine movement stage 18.

[0056] In this embodiment, in the control unit 25, according to the warpage information acquired by the acquisition unit 40, that is, according to the shape and size of the warpage of the substrate W, the drive profile of the substrate W by the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 is determined (controlled). For example, as the drive profile, the control unit 25 determines (changes) the speed (moving speed) of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 so that the substrate W is passed to the chuck surface 20A of the chuck 20 in a state where the warpage of the substrate W is corrected. In this way, by controlling the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 based on the warpage information regarding the warpage of the substrate W, the wind pressure generated by the movement of the fine movement stage 18 (the pressure between the substrate W and the chuck 20) is changed.

[0057] With reference to FIGS. 5(a) and 5(b), a specific example of determining the drive profile will be described such that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 is changed according to the shape of the warpage of the substrate W.

[0058] For example, as shown in Fig. 5(a), when the warped shape of the substrate W is a downward convex shape, the drive profile is determined such that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 becomes faster than a predetermined speed. Thereby, the positive pressure generated by the movement of the fine movement stage 18 becomes larger than the negative pressure due to the suction of the chuck 20 (chuck surface 20A), and the pressure between the substrate W and the chuck 20 becomes a positive pressure. Therefore, in a state where the substrate W warped in a downward convex shape is held (adsorbed) by the pin member 23, the lower side of the substrate W becomes a positive pressure, and the warping of the substrate W can be suppressed. In other words, the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is corrected. Note that the predetermined speed is the default speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 when the shape of the substrate W is flat.

[0059] On the other hand, as shown in Fig. 5(b), when the warped shape of the substrate W is an upward convex shape, the drive profile is determined such that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 becomes slower than a predetermined speed. Thereby, the positive pressure generated by the movement of the fine movement stage 18 becomes smaller than the negative pressure due to the suction of the chuck 20 (chuck surface 20A), and the pressure between the substrate W and the chuck 20 becomes a negative pressure. Therefore, in a state where the substrate W warped in an upward convex shape is held (adsorbed) by the pin member 23, the lower side of the substrate W becomes a negative pressure, and the warping of the substrate W can be suppressed. In other words, the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is corrected.

[0060] In addition to the warped shape of the substrate W, the drive profile may be determined such that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 is changed according to the magnitude of the warping of the substrate W. Thereby, it becomes possible to further suppress the warping of the substrate W, and the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is more corrected.

[0061] For example, when the warpage shape of the substrate W is a downward convex shape, the driving profile is determined such that the speed of the fine movement stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 increases as the magnitude of the warpage of the substrate W increases. Thereby, as the magnitude of the warpage of the substrate W increases, the positive pressure between the substrate W and the chuck 20 increases, so that it becomes possible to correct (suppress) the warpage of the substrate W according to the magnitude of the warpage of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warpage of the substrate W is more corrected.

[0062] On the other hand, when the warpage shape of the substrate W is an upward convex shape, the driving profile is determined such that the speed of the fine movement stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 decreases as the magnitude of the warpage of the substrate W increases. Thereby, as the magnitude of the warpage of the substrate W increases, the negative pressure between the substrate W and the chuck 20 increases, so that it becomes possible to correct (suppress) the warpage of the substrate W according to the magnitude of the warpage of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warpage of the substrate W is more corrected.

[0063] In this way, by using the fine movement stage 18 to adsorb (hold) the substrate W on the chuck surface 20A of the chuck 20 in a state where the warpage of the substrate W is corrected, the distortion generated in the substrate W can be reduced. Further, it is possible to suppress the wear (damage) of the chuck surface 20A caused by a part of the substrate W coming into contact with the chuck surface 20A of the chuck 20 first.

[0064] In the present embodiment, the case where the warpage shape of the substrate W is a dome shape, that is, a downward convex shape or an upward convex shape has been described, but the present invention is not limited thereto. Even when the warpage shape of the substrate W is a saddle shape, a tunnel shape, or many other shapes, it is only necessary to appropriately determine (control) the speed of the fine movement stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 according to the shape and size thereof.

[0065] Incidentally, the relationship between the shape and size of the warp of the substrate W and the speed of the fine movement stage 18 required to correct such warp of the substrate W may be obtained in advance through experiments, simulations, etc. Further, the speed of the fine movement stage 18 when transferring the substrate W from the pin member 23 to the chuck 20 may be determined using machine learning obtained by accumulating the relationship between the shape and size of the warp of the substrate W and the speed of the fine movement stage 18 required to correct such warp of the substrate W.

[0066] Incidentally, in the present embodiment, the drive profile determines the speed of the fine movement stage 18 when transferring the substrate W from the pin member 23 to the chuck 20, but it is not limited thereto. For example, when driving the pin member 23 to transfer the substrate W from the pin member 23 to the chuck 20, the drive profile determines the speed of the pin member 23 when transferring the substrate W from the pin member 23 to the chuck 20. Further, when driving the fine movement stage 18 and the pin member 23 to transfer the substrate W from the pin member 23 to the chuck 20, the drive profile determines the respective speeds of the fine movement stage 18 and the pin member 23 when transferring the substrate W from the pin member 23 to the chuck 20.

[0067] Further, as shown in FIG. 6, the exposure apparatus 1 may further include a pump 51 that supplies gas to the ventilation line 26 in addition to a vacuum pump 27 that discharges the gas in the ventilation line 26 connected to the ventilation hole 201 provided in the chuck 20. In this case, the vacuum pump 27 functions as a suction unit that sucks gas through the chuck surface 20A of the chuck 20 in cooperation with the ventilation line 26. The pump 51 functions as a blowing unit that blows gas from the chuck surface 20A of the chuck 20 toward the substrate W to generate a positive pressure between the substrate W and the chuck 20 in cooperation with the ventilation line 26.

[0068] In the exposure apparatus 1 shown in FIG. 6, when passing the substrate W from the pin member 23 to the chuck 20, it is possible to generate a negative pressure by sucking gas from the vent hole 201 or a positive pressure by blowing out gas from the vent hole 201 between the substrate W and the chuck 20. Further, as described above, a positive pressure is generated between the substrate W and the chuck 20 due to the wind pressure caused by the movement (moving speed) of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20.

[0069] Therefore, in the control unit 25, according to the warpage information acquired by the acquisition unit 40, that is, according to the shape and size of the warpage of the substrate W, the drive profile of the substrate W by the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 is determined (controlled). Further, in the control unit 25, the vacuum pump 27 and the pump 51 are controlled so that the pressure for sucking gas or the pressure for blowing out gas from the vent hole 201 is changed according to the shape and size of the warpage of the substrate W.

[0070] For example, when the warped shape of the substrate W is a downward convex shape, as described above, the drive profile is determined such that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 becomes faster than a predetermined speed. Further, the vacuum pump 27 is controlled such that the pressure for sucking gas from the vent hole 201 provided in the chuck 20 becomes smaller than a predetermined pressure. Alternatively, instead of reducing the pressure for sucking gas from the vent hole 201 provided in the chuck 20, the pump 51 is controlled so as to blow out gas from the vent hole 201. As a result, since the combined pressure of the negative pressure due to the suction of the chuck 20 (chuck surface 20A) or the positive pressure due to the blowing out of gas and the positive pressure generated by the movement of the fine movement stage 18 becomes a positive pressure, the pressure between the substrate W and the chuck 20 becomes a positive pressure. Therefore, in a state where the substrate W warped in a downward convex shape is held (adsorbed) by the pin member 23, the lower side of the substrate W becomes a positive pressure, and the warping of the substrate W can be suppressed. In other words, in a state where the warping of the substrate W is corrected, the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20. Note that the predetermined pressure is the default pressure when sucking gas from the vent hole 201 provided in the chuck 20 when the shape of the substrate W is flat.

[0071] On the other hand, when the warping shape of the substrate W is a convex shape, as described above, the drive profile is determined so that the speed of the fine movement stage 18 when passing the substrate W from the pin member 23 to the chuck 20 becomes slower than a predetermined speed. Further, the vacuum pump 27 is controlled so that the pressure for sucking gas from the vent hole 201 provided in the chuck 20 becomes larger than a predetermined pressure. Also, the pump 51 is controlled so that gas is not blown out from the vent hole 201 provided in the chuck 20. As a result, since the pressure combining the negative pressure due to the suction of the chuck 20 (chuck surface 20A) and the positive pressure generated by the movement of the fine movement stage 18 becomes a negative pressure, the pressure between the substrate W and the chuck 20 becomes a negative pressure. Therefore, in a state where the substrate W warped in a convex shape is held (adsorbed) by the pin member 23, the lower side of the substrate W becomes a negative pressure, and the warping of the substrate W can be suppressed. In other words, the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is corrected.

[0072] Further, not only the warping shape of the substrate W but also the magnitude of the warping of the substrate W, the vacuum pump 27 and the pump 51 may be controlled so that the pressure for sucking gas or the pressure for blowing out gas is changed from the vent hole 201. Thereby, it becomes possible to further suppress the warping of the substrate W, and the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is more corrected.

[0073] For example, when the warping shape of the substrate W is a concave shape, the pressure for sucking gas or the pressure for blowing out gas is controlled so that the positive pressure between the substrate W and the chuck 20 becomes larger as the magnitude of the warping of the substrate W is larger than when the magnitude of the warping of the substrate W is smaller. As a result, since the positive pressure between the substrate W and the chuck 20 becomes larger as the magnitude of the warping of the substrate W is larger, it becomes possible to correct (suppress) the warping of the substrate W according to the magnitude of the warping of the substrate W. In other words, the substrate W can be passed from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is more corrected.

[0074] On the other hand, when the warping shape of the substrate W is a convex shape, the pressure for sucking gas is controlled so that the negative pressure between the substrate W and the chuck 20 becomes larger as the warping size of the substrate W is larger than when the warping size of the substrate W is smaller. As a result, as the warping size of the substrate W is larger, the negative pressure between the substrate W and the chuck 20 becomes larger, so that it is possible to correct (suppress) the warping of the substrate W according to the warping size of the substrate W. In other words, the substrate W can be transferred from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is more corrected.

[0075] As described above, in addition to the fine movement stage 18, by using the vacuum pump 27 and the pump 51, the distortion generated in the substrate W can be reduced by adsorbing (holding) the substrate W on the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is corrected. Further, it is possible to suppress the wear (damage) of the chuck surface 20A caused by a part of the substrate W coming into contact with the chuck surface 20A of the chuck 20 first.

[0076] The relationship between the warping shape and size of the substrate W and the speed of the fine movement stage 18, the pressure for sucking gas from the vent hole 201, and the pressure for blowing out gas required to correct the warping of the substrate W may be obtained in advance through experiments, simulations, etc.

[0077] According to the present embodiment, even when the substrate W has warping, the substrate W can be transferred from the pin member 23 to the chuck surface 20A of the chuck 20 in a state where the warping of the substrate W is corrected. Therefore, the distortion generated in the substrate W when holding (adsorbing) the substrate W on the chuck surface 20A of the chuck 20 can be reduced, and the substrate W can be held with high flatness.

[0078] In the present embodiment, the exposure apparatus 1 has been described as an example, but a stage apparatus having a substrate stage 14 (fine movement stage 18 and coarse movement stage 19), a pin member 23, a control unit 25, a ventilation line 26, a vacuum pump 27, a pump 51, etc. also constitutes one aspect of the present invention.

[0079] The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an article such as a device (semiconductor element, magnetic storage medium, liquid crystal display element, etc.). Such a manufacturing method includes a step of forming a pattern on a substrate using an exposure apparatus 1, a step of processing the substrate on which the pattern is formed, and a step of manufacturing an article from the processed substrate. Further, such a manufacturing method may include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the prior art.

[0080] Note that the present invention is not limited to an exposure apparatus as a lithographic apparatus, and can also be applied to, for example, an imprint apparatus. The imprint apparatus brings an imprint material supplied (disposed) on a substrate into contact with a mold (master), and forms a pattern of a cured product in which the pattern of the mold is transferred by applying energy for curing to the imprint material.

[0081] The invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

Explanation of Reference Numerals

[0082] 1: Exposure apparatus 18: Fine movement stage 20: Chuck 20A: Chuck surface 23: Pin member 25: Control unit 40: Acquisition unit

Claims

1. A stage device for holding a substrate, comprising: a substrate holding part having a holding surface for holding the substrate; a drive mechanism for placing the substrate on the holding surface; a control unit that controls the pressure in the space between the substrate and the holding surface by controlling the drive of the drive mechanism in the height direction based on the warpage information of the substrate measured in a state where the substrate is supported by a support surface smaller than the holding surface; The control unit controls the pressure in the space so that the warpage of the substrate is reduced before the substrate is placed on the holding surface. The stage device is characterized by this.

2. Further comprising an acquisition unit for acquiring the warpage information; The control unit controls the pressure in the space between the substrate and the holding surface to a positive pressure or a negative pressure by controlling the drive of the drive mechanism in the height direction based on the warpage information. The stage device according to claim 1 is characterized by this.

3. The acquisition unit includes: a support member having the support surface; a measurement unit for measuring the position of the substrate supported on the support surface in the height direction; a processing unit for obtaining the warpage information based on the position measured by the measurement unit; The stage device according to claim 2 is characterized by including these.

4. The acquisition unit acquires the warpage information from an external measurement device that measures the warpage of the substrate supported on the support surface. The stage device according to claim 2 is characterized by this.

5. The drive mechanism includes: a holding member provided so as to be able to project from the holding surface through a hole provided in the substrate holding part and for holding the substrate; a drive part for driving the substrate holding part and the holding member relatively along the projecting direction of the holding member; including; The control unit controls the speed when driving the substrate holding part and the holding member relatively through the drive part to place the substrate on the holding surface from the holding member. The stage device according to any one of claims 1 to 4 is characterized by this.

6. The warpage information includes information indicating the shape of the warpage of the substrate; The control unit controls the drive of the drive mechanism so that the speed when placing the substrate on the holding surface from the holding member is changed according to the shape of the warpage of the substrate. The stage device according to claim 5 is characterized by this.

7. A stage device for holding a substrate, comprising: a substrate holding part having a holding surface for holding the substrate; A drive mechanism for placing the substrate on the holding surface; A control unit that controls the driving of the drive mechanism in the height direction based on the warp information of the substrate measured in a state where the substrate is supported by a support surface smaller than the holding surface; and The warp of the substrate is reduced before the substrate is placed on the holding surface; The drive mechanism includes: A holding member that is provided so as to be able to protrude from the holding surface through a hole provided in the substrate holding portion and holds the substrate; A drive unit that relatively drives the substrate holding portion and the holding member along the protruding direction of the holding member; and The control unit controls the speed when the substrate holding portion and the holding member are relatively driven via the drive unit to place the substrate from the holding member on the holding surface; The warp information includes information indicating the shape of the warp of the substrate; The control unit controls the driving of the drive mechanism so that the speed when placing the substrate from the holding member on the holding surface is changed according to the shape of the warp of the substrate; The control unit When the shape of the warp of the substrate is convex downward with respect to the holding surface, controls the driving of the drive mechanism so that the speed when placing the substrate from the holding member on the holding surface becomes faster than a predetermined speed; A stage device, wherein when the shape of the warp of the substrate is convex upward with respect to the holding surface, the driving of the drive mechanism is controlled so that the speed when placing the substrate from the holding member on the holding surface becomes slower than the predetermined speed.

8. The stage device according to claim 7, wherein the predetermined speed is the speed when the substrate holding portion and the holding member are relatively driven via the drive unit to place the substrate from the holding member on the holding surface when the shape of the substrate is flat.

9. The warp information includes information indicating the magnitude of the warp of the substrate; The stage device according to any one of claims 5 to 8, wherein the control unit controls the driving of the drive mechanism so that the speed when placing the substrate from the holding member on the holding surface is changed according to the magnitude of the warp of the substrate.

10. A stage device for holding a substrate, comprising: A substrate holding portion having a holding surface for holding the substrate; A drive mechanism for placing the substrate on the holding surface; A control unit that controls the driving of the driving mechanism in the height direction based on the warpage information regarding the warpage of the substrate measured in a state where the substrate is supported by a support surface smaller than the holding surface, and the warpage of the substrate is reduced before the substrate is placed on the holding surface, the driving mechanism includes a holding member that is provided so as to be able to protrude from the holding surface through a hole provided in the substrate holding portion and holds the substrate, a driving portion that relatively drives the substrate holding portion and the holding member along the protruding direction of the holding member, and includes the control unit controls the speed when placing the substrate from the holding member onto the holding surface by relatively driving the substrate holding portion and the holding member via the driving portion, the warpage information includes information indicating the magnitude of the warpage of the substrate, the control unit controls the driving of the driving mechanism so that the speed when placing the substrate from the holding member onto the holding surface is changed according to the magnitude of the warpage of the substrate, the control unit when the shape of the warpage of the substrate is a shape convex downward with respect to the holding surface, controls the driving of the driving mechanism so that the greater the magnitude of the warpage of the substrate, the faster the speed when placing the substrate from the holding member onto the holding surface, A stage device, characterized in that when the shape of the warpage of the substrate is a shape convex upward with respect to the holding surface, the driving of the driving mechanism is controlled so that the greater the magnitude of the warpage of the substrate, the slower the speed when placing the substrate from the holding member onto the holding surface.

11. the warpage information includes information indicating the shape of the warpage of the substrate, further includes a suction portion that sucks gas through the holding surface, The stage device according to any one of claims 1 to 10, wherein the control unit controls the suction portion so that the pressure for sucking the gas is changed according to the shape of the warpage of the substrate.

12. the control unit when the shape of the warpage of the substrate is a shape convex downward with respect to the holding surface, controls the suction portion so that the pressure for sucking the gas becomes smaller than a predetermined pressure, The stage device according to claim 11, characterized in that when the shape of the warpage of the substrate is a shape convex upward with respect to the holding surface, the suction portion is controlled so that the pressure for sucking the gas becomes greater than the predetermined pressure.

13. The stage device according to claim 12, wherein the predetermined pressure is the pressure when sucking the gas when the shape of the substrate is flat.

14. The warpage information includes information indicating the magnitude of the warpage of the substrate, The stage device according to any one of claims 11 to 13, wherein the control unit controls the suction unit such that the pressure for sucking the gas is changed according to the magnitude of the warpage of the substrate.

15. The warpage information includes information indicating the shape of the warpage of the substrate, The stage device further includes a blowing unit that blows gas from the holding surface toward the substrate, The control unit, When the shape of the warpage of the substrate is convex downward with respect to the holding surface, controls the blowing unit to blow the gas, The stage device according to any one of claims 1 to 14, wherein when the shape of the warpage of the substrate is convex upward with respect to the holding surface, controls the blowing unit not to blow the gas.

16. The warpage information includes information indicating the shape of the warpage of the substrate, The stage device further includes a blowing unit that blows gas from the holding surface toward the substrate, The stage device according to any one of claims 1 to 14, wherein the control unit controls the blowing unit such that the pressure for blowing the gas is changed according to the shape of the warpage of the substrate.

17. A lithography apparatus for forming a pattern on a substrate, The lithography apparatus, comprising the stage device according to any one of claims 1 to 16 for holding the substrate.

18. The lithography apparatus according to claim 17, further comprising a projection optical system that projects a pattern of a reticle onto the substrate.

19. A step of forming a pattern on a substrate using the lithography apparatus according to claim 17 or 18, A step of processing the substrate on which the pattern is formed in the step, A step of manufacturing an article from the processed substrate, A method for manufacturing an article, comprising the steps.

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