Substrate processing apparatus, and substrate processing method

Abstract

To provide a wafer processing device capable of precisely controlling an etching width, and a wafer processing method.SOLUTION: A photo-acid generator, which generates acid by irradiation with light, and a polymer film containing polymers are formed on a top face of a wafer W held by a spin chuck 5 by a polymer containing liquid nozzle 9. Light is emitted by a light emission member 12 and radiated to a peripheral edge of a first principal surface of the wafer W. A reflection suppression member 13 suppresses reflection of light from the reflection suppression member 13. The reflection suppression member 13 includes a first portion 70 which can be disposed at an adjacent position adjacent from the side of a central part CP of the top face of the wafer W to a radiation area RA radiated by light from the light emission member 12 at a peripheral edge of the top face of the wafer W.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus for processing a substrate and a substrate processing method for processing a substrate.

[0002] Substrates to be processed include, for example, semiconductor wafers, substrates for FPD (Flat Panel Display) such as liquid crystal display devices and organic EL (Electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, substrates for solar cells, and the like.

Background Art

[0003] The following Patent Document 1 discloses a method of etching a multilayer film formed on the upper surface of a substrate by causing an etching solution to land at a position inside by a predetermined width from the peripheral edge of the substrate and blowing the etching solution outside the substrate by a gas flow of an inert gas.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the method disclosed in Patent Document 1, an etching solution is used for etching the substrate. The etching solution that lands on the upper surface of the substrate spreads on the upper surface of the substrate. Therefore, it is difficult to precisely control the width of the region to be etched, that is, the etching width, at the peripheral edge of the upper surface of the substrate.

[0006] Therefore, one object of this invention is to provide a substrate processing apparatus and a substrate processing method capable of precisely controlling the etching width.

Means for Solving the Problems

[0007] One embodiment of the present invention provides a substrate processing apparatus for processing a substrate having a first main surface and a second main surface opposite to the first main surface. The substrate processing apparatus includes a substrate holding member that holds a substrate in a predetermined processing posture, a photoacid generator that generates an acid by irradiation with light, and a polymer film containing a polymer, and forms the polymer film on the first main surface of the substrate held by the substrate holding member. A polymer film forming member, a light emitting member that emits light and irradiates light on the peripheral edge of the first main surface of the substrate held by the substrate holding member, and the light from the light emitting member is irradiated on the peripheral edge of the first main surface of the substrate held by the substrate holding member. A reflection suppressing member including a first portion that can be disposed at an adjacent position adjacent to the central portion side of the first main surface of the substrate in the irradiation region, and the reflection suppressing member that suppresses reflection of light from the reflection suppressing member.

[0008] According to this apparatus, a polymer film containing a photoacid generator and a polymer is formed on the first main surface of the substrate by the polymer film forming member. With the polymer film formed on the first main surface of the substrate, by irradiating the light emitted from the light emitting member on the peripheral edge of the first main surface of the substrate, an acid can be generated in the polymer film. The acid generated in the polymer film etches the peripheral edge of the first main surface of the substrate. Thus, the region (irradiation region) irradiated with light at the peripheral edge of the first main surface of the substrate is etched.

[0009] Since the polymer film contains a polymer, the fluidity of the polymer film is reduced. Therefore, the acid generated in the polymer film tends to stay at the generated position. Accordingly, the width of the region (etching region) etched at the peripheral edge of the first main surface of the substrate, that is, the etching width can be precisely controlled. The etching width corresponds to the distance between the peripheral edge (tip) of the substrate and the end of the etching region on the central portion side of the first main surface.

[0010] According to this apparatus, the reflection suppression member includes a first portion that can be disposed at an adjacent position adjacent to the central portion side of the first main surface of the substrate in the irradiation region. Therefore, even when light is reflected from the irradiation region and irradiates the first portion, the reflection of light from the reflection suppression member is suppressed. Therefore, it is possible to suppress the light reflected from the irradiation region from being irradiated to a position closer to the central portion of the first main surface than the reflection suppression member. Accordingly, the etching width can be controlled more precisely by the reflection suppression member.

[0011] In one embodiment of the present invention, the substrate processing apparatus further includes a substrate rotation mechanism that rotates the substrate around a rotation axis passing through the central portion of the first main surface of the substrate held by the substrate holding member. And the light emitting member emits light toward a predetermined range in the rotation direction around the rotation axis at the peripheral portion of the first main surface of the substrate held by the substrate holding member.

[0012] According to this apparatus, light is emitted from the light emitting member toward a predetermined range in the rotation direction at the peripheral portion of the first main surface of the substrate. By irradiating the peripheral portion of the first main surface of the substrate while rotating the substrate around the rotation axis, the peripheral portion of the first main surface of the substrate can be etched over the entire circumference. Therefore, since light is irradiated to a predetermined range on the peripheral portion of the first main surface of the substrate, uneven irradiation can be reduced as compared with the case where light is irradiated to the entire area of the peripheral portion of the first main surface of the substrate at the same time. Accordingly, the etching width can be precisely controlled over the entire circumference of the substrate.

[0013] In one embodiment of the present invention, the reflection suppression member is connected to the first portion and further includes a second portion adjacent to the irradiation region from at least one of the rotation directions when the first portion is located at the adjacent position.

[0014] According to this device, when the first part is in the adjacent position, the second part of the reflection suppression member is adjacent to the irradiation region from at least one of the rotational directions. Therefore, even when light is reflected from the irradiation region and irradiates the second part, the reflection of light from the reflection suppression member is suppressed. Therefore, it is possible to suppress the light reflected from the irradiation region from being irradiated to the opposite side of the irradiation region across the reflection suppression member in the rotational direction. Thus, the etching width can be more precisely controlled by the reflection suppression member.

[0015] In one embodiment of the present invention, the first part has an annular or circular shape having a central axis, and when the first part is in the adjacent position, the central axis is located on the rotation axis. Therefore, if the first part is arranged in the adjacent position, it is possible to always suppress light from being irradiated to a position closer to the center of the first main surface than the first part throughout the entire rotational direction. Thus, it is possible to reliably suppress, over the entire circumference of the first main surface of the substrate, the light reflected from the irradiation region from being irradiated to a position closer to the center of the first main surface than the irradiation region.

[0016] In one embodiment of the present invention, the adjacent position is a shielding position where the first part shields a part of the light emitted from the light emitting member. Therefore, by controlling the position of the first part of the reflection suppression member, the size of the irradiation region can be controlled. Thereby, the etching width can be controlled.

[0017] In one embodiment of the present invention, the first part has a facing surface that faces the first main surface of the substrate in a state parallel to the first main surface of the substrate held by the substrate holding member when the first part is in the adjacent position, and an orthogonal surface that is connected to the facing surface and is orthogonal to the facing surface. Therefore, it is possible to suppress the light emitted from the light emitting member from being irradiated to a position closer to the center of the first main surface than the orthogonal surface on the first main surface. Therefore, the irradiation region can be defined along the orthogonal surface. Thus, the etching width can be precisely controlled.

[0018] In one embodiment of the present invention, when the first portion is located at the adjacent position, the first portion has a facing surface facing the first main surface of the substrate held by the substrate holding member in a state parallel to the first main surface of the substrate, and an inclined surface connected to the facing surface at an acute angle inside the first portion and inclined with respect to the facing surface.

[0019] According to this apparatus, it is possible to suppress the light emitted from the light emitting member from being irradiated at a position closer to the central portion of the first main surface than the inclined surface on the first main surface. Further, by emitting light from the light emitting member along the inclined surface, the processing target film exposed from the first main surface of the substrate can be etched obliquely. As a result, the radially outer end of the processing target film at the peripheral portion of the first main surface of the substrate can be made tapered. As a result, peeling of the unintended processing target film after substrate processing can be suppressed.

[0020] In one embodiment of the present invention, the substrate processing apparatus further includes a chamber that houses the substrate holding member and has a support wall that faces the first main surface of the substrate held by the substrate holding member and supports the light emitting member.

[0021] According to this apparatus, it is possible to irradiate the peripheral portion of the first main surface of the substrate without changing the traveling direction of the light emitted from the light emitting member. Therefore, a member for changing the traveling direction of the light can be omitted.

[0022] In one embodiment of the present invention, the substrate processing apparatus further includes a direction changing member that changes the traveling direction of the light so that the traveling direction of the light emitted from the light emitting member approaches a direction orthogonal to the first main surface of the substrate held by the substrate holding member.

[0023] According to this apparatus, even if the traveling direction of the light emitted from the light emitting member is a direction along the first main surface of the substrate, the traveling direction of the light can be made closer to a direction orthogonal to the first main surface of the substrate. Therefore, the degree of freedom in arranging the light emitting member can be improved.

[0024] In one embodiment of the present invention, the direction-changing member includes a support portion having a recess capable of accommodating the peripheral portion of the substrate held by the substrate holding member, and a reflecting portion provided at the edge of the recess for reflecting the light emitted from the light-emitting member, the reflecting portion facing both the first main surface and the second main surface of the substrate in a state where the peripheral portion of the substrate held by the substrate holding member is accommodated in the recess.

[0025] According to this apparatus, it is possible to irradiate light not only on the first main surface of the substrate but also on the second main surface using a single light source. Therefore, it is possible to etch the peripheral portion of the first main surface and at the same time etch the peripheral portion of the second main surface.

[0026] Another embodiment of the present invention provides a substrate processing method for processing a substrate having a first main surface and a second main surface opposite to the first main surface. The substrate processing method includes a substrate holding step of holding the substrate in a predetermined processing posture, a polymer film forming step of forming a polymer film containing a photoacid generator that generates an acid by irradiation with light and a polymer on the first main surface of the substrate, and a light irradiation step of irradiating light on a region on the first main surface of the substrate adjacent to the reflection suppression member from a side opposite to the central portion of the first main surface of the substrate while the reflection suppression member for suppressing light reflection faces the peripheral portion of the first main surface of the substrate.

[0027] According to this method, a polymer film containing a photoacid generator and a polymer is formed on the first main surface of the substrate. By irradiating light on the peripheral portion of the first main surface of the substrate in a state where the polymer film is formed on the first main surface of the substrate, an acid can be generated in the polymer film. The peripheral portion of the first main surface of the substrate is etched by the acid generated in the polymer film. In this way, the region (irradiation region) irradiated with light at the peripheral portion of the first main surface of the substrate is etched.

[0028] Since the polymer film contains a polymer, the fluidity of the polymer film is reduced. Therefore, the acid generated in the polymer film tends to stay at the position where it is generated. Accordingly, the width of the region (etching region) to be etched at the peripheral portion of the first main surface of the substrate, that is, the etching width can be precisely controlled. The etching width corresponds to the distance between the periphery (tip) of the substrate and the end of the etching region on the central portion side of the first main surface of the substrate.

[0029] According to this method, with the reflection suppression member for suppressing light reflection facing the peripheral portion of the first main surface of the substrate, light is irradiated onto the region on the first main surface of the substrate adjacent to the reflection suppression member from the side opposite to the central portion of the first main surface of the substrate with respect to the reflection suppression member. Therefore, even when light is reflected from the irradiation region and irradiated onto the first portion, the reflection of light from the reflection suppression member is suppressed. Therefore, it is possible to suppress the light reflected from the irradiation region from being irradiated to a position closer to the central portion of the first main surface than the reflection suppression member. Accordingly, the reflection suppression member can more precisely control the etching width.

[0030] In another embodiment of the present invention, the polymer film forming step includes forming the polymer film in the peripheral region including the peripheral portion on the first main surface of the substrate without forming the polymer film in the inner region on the central portion side rather than the peripheral region.

[0031] According to this method, it is possible to precisely control the etching width of the peripheral portion of the first main surface of the substrate while reducing the consumption amount of the polymer film.

[0032] In another embodiment of the present invention, the substrate processing apparatus further includes a substrate rotation step of rotating the substrate around a rotation axis passing through the central portion of the substrate. And the light irradiation step includes a step of irradiating light in a predetermined range in the rotation direction around the rotation axis at the peripheral portion of the first main surface of the substrate.

[0033] According to this method, at the peripheral portion of the first main surface of the substrate, light is emitted from the light emitting member toward a predetermined range in the rotational direction. By irradiating the peripheral portion of the upper surface of the substrate while rotating the substrate around the rotation axis, the peripheral portion of the upper surface of the substrate can be etched over the entire circumference. Therefore, since light is irradiated to a predetermined range on the peripheral portion of the first main surface of the substrate, irradiation unevenness can be reduced as compared with the case where light is irradiated to the entire area of the peripheral portion of the first main surface of the substrate at the same time. Therefore, the etching width can be precisely controlled over the entire circumference of the substrate.

[0034] In another embodiment of the present invention, the substrate processing method further includes an irradiation region adjusting step of adjusting the size of the irradiation region where light is irradiated on the first main surface of the substrate by disposing the reflection suppressing member at a shielding position that blocks a part of the light emitted from the light emitting member in the light irradiation step.

[0035] According to this method, the size of the irradiation region can be controlled by blocking a part of the light emitted from the light emitting member with the reflection suppressing member. Thereby, the etching width can be precisely controlled.

[0036] In another embodiment of the present invention, the polymer film forming step and the light irradiation step are alternately executed a plurality of times. The plurality of light irradiation steps include a first light irradiation step of emitting light toward the peripheral portion of the first main surface of the substrate, and a second light irradiation step that is executed after the first light irradiation step and emits light toward the peripheral portion of the first main surface of the substrate. The irradiation region adjusting step includes a step of moving the reflection suppressing member so that a first irradiation region where light is irradiated on the first main surface of the substrate in the first light irradiation step reaches closer to the center portion side of the first main surface of the substrate than a second irradiation region where light is irradiated on the first main surface of the substrate in the second light irradiation step.

[0037] According to this method, the reflection suppression member is moved so that the first irradiation region is located closer to the center of the first main surface of the substrate than the second irradiation region. Therefore, a part of the region etched by the first light irradiation process is not irradiated with light at the peripheral portion of the first main surface of the substrate. Therefore, a step is formed in the film to be processed so that the film to be processed becomes thinner toward the periphery (tip) of the substrate. As a result, peeling of the unintended film to be processed after substrate processing can be suppressed.

Brief Description of Drawings

[0038]

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DETAILED DESCRIPTION OF THE INVENTION

[0039] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

[0040] <Configuration of Substrate Processing Apparatus According to First Embodiment> FIG. 1 is a plan view for explaining a configuration example of a substrate processing apparatus 1 according to a first embodiment of the present invention.

[0041] The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W one by one. In this embodiment, the substrate W has a disk shape. The substrate W is a substrate such as a silicon wafer and has a pair of main surfaces. The pair of main surfaces includes a first main surface W1 (see FIG. 2 described later) and a second main surface W2 (see FIG. 2 described later) on the side opposite to the first main surface W1. Hereinafter, unless otherwise specified, an example will be described in which the upper surface (the upper main surface) is the first main surface W1 and the lower surface (the lower main surface) is the second main surface W2.

[0042] The substrate processing apparatus 1 includes a plurality of processing units 2 that process the substrate W, a load port LP (container holding unit) on which a carrier C (container) that houses a plurality of substrates W processed by the processing unit 2 is placed, a transfer robot (first transfer robot IR and second transfer robot CR) that transfers the substrate W between the load port LP and the processing unit 2, and a controller 3 that controls each member provided in the substrate processing apparatus 1.

[0043] The first transfer robot IR transfers the substrate W between the carrier C and the second transfer robot CR. The second transfer robot CR transfers the substrate W between the first transfer robot IR and the processing unit 2. Each transfer robot is, for example, an articulated arm robot.

[0044] The plurality of processing units 2 are arranged on both sides of the transfer path TR along the transfer path TR through which the substrate W is transferred by the second transfer robot CR, and are stacked and arranged in the vertical direction. The plurality of processing units 2 have, for example, the same configuration.

[0045] The plurality of processing units 2 form four processing towers TW respectively arranged at four horizontally separated positions. Each processing tower TW includes a plurality of processing units 2 stacked in the vertical direction. The four processing towers TW are arranged in pairs on both sides of a transport path TR extending from the load port LP toward the second transport robot CR.

[0046] The processing unit 2 includes a chamber 4 for accommodating a substrate W during substrate processing, and a processing cup 7 disposed in the chamber 4, and executes processing on the substrate W in the processing cup 7. The chamber 4 includes an entrance / exit (not shown) for the second transport robot CR to carry the substrate W into and out of the chamber 4, and a shutter unit (not shown) for opening and closing the entrance / exit. As the processing liquid supplied to the substrate W in the chamber 4, although details will be described later, examples include a polymer-containing liquid, a removal liquid, a rinse liquid, and the like.

[0047] <Configuration of the processing unit according to the first embodiment> FIG. 2 is a schematic diagram for explaining the configuration of the processing unit 2.

[0048] The processing unit 2 further includes a spin chuck 5 that rotates the substrate W around the rotation axis A1 while holding the substrate W in a predetermined processing posture, a plurality of processing liquid nozzles (a polymer-containing liquid nozzle 9, a removal liquid nozzle 10, and a rinse liquid nozzle 11) that discharge the processing liquid toward the upper surface of the substrate W held by the spin chuck 5, a light emitting member 12 that emits light L toward the upper surface of the substrate W held by the spin chuck 5, and a reflection suppression member 13 that suppresses the reflection of the light L.

[0049] The spin chuck 5, the plurality of processing liquid nozzles, and the reflection suppression member 13 are disposed in the chamber 4. The light emitting member 12 is disposed outside the chamber 4. The chamber 4 includes a bottom wall 4c that supports the spin chuck 5, an upper wall 4a that faces the substrate W held by the spin chuck 5, and side walls 4b that connect the bottom wall 4c and the upper wall 4a. The internal space of the chamber 4 is partitioned by the upper wall 4a, the bottom wall 4c, and the side walls 4b.

[0050] The rotation axis A1 passes through the central part CP on the upper surface of the substrate W and is orthogonal to each main surface of the substrate W held in the processing posture. In this embodiment, the processing posture is a horizontal posture in which the main surface of the substrate W is horizontal. The horizontal posture is the posture of the substrate W shown in FIG. 2. When the processing posture is the horizontal posture, the rotation axis A1 extends vertically.

[0051] The spin chuck 5 includes a spin base 18 that adsorbs to the lower surface of the substrate W and holds the substrate W in the processing posture, a rotation shaft 19 that extends along the rotation axis A1 and is coupled to the spin base 18, and a rotation drive mechanism 20 that rotates the rotation shaft 19 around the rotation axis A1.

[0052] The spin base 18 has a suction surface 18a that adsorbs to the lower surface of the substrate W. The suction surface 18a is, for example, the upper surface of the spin base 18 and is a circular surface through which the rotation axis A1 passes at its central part. The diameter of the suction surface 18a is smaller than the diameter of the substrate W. The upper end portion of the rotation shaft 19 is coupled to the spin base 18.

[0053] A suction path 21 is inserted into the spin base 18 and the rotation shaft 19. The suction path 21 has a suction port 21a that exposes from the center of the suction surface 18a of the spin base 18. The suction path 21 is connected to a suction pipe 22. The suction pipe 22 is connected to a suction device 24 such as a vacuum pump. The suction device 24 may form a part of the substrate processing apparatus 1 or may be a device separate from the substrate processing apparatus 1 provided in the facility where the substrate processing apparatus 1 is installed.

[0054] The suction pipe 22 is provided with a suction valve 23 that opens and closes the suction pipe 22. By opening the suction valve 23, the substrate W disposed on the suction surface 18a of the spin base 18 is sucked by the suction port 21a of the suction path 21. Thereby, the substrate W is sucked from below to the suction surface 18a and held in the processing posture.

[0055] When the rotary drive mechanism 20 rotates the rotary shaft 19, the spin base 18 is rotated. As a result, the substrate W is rotated about the rotation axis A1 together with the spin base 18. The rotary drive mechanism 20 is an example of a substrate rotation mechanism that rotates the substrate W held by the spin base 18 about the rotation axis A1.

[0056] The spin base 18 is an example of a substrate holding member that holds the substrate W in a horizontal posture (predetermined processing posture). The spin chuck 5 is an example of a rotary holding unit that rotates the substrate W about the rotation axis A1 while holding the substrate W in a horizontal posture (predetermined processing posture). The spin chuck 5 is also referred to as a suction rotary unit that rotates the substrate W while adsorbing the substrate W to the suction surface 18a.

[0057] The plurality of processing liquid nozzles include a polymer-containing liquid nozzle 9 that discharges a continuous flow of a polymer-containing liquid toward the upper surface of the substrate W held by the spin chuck 5, a removal liquid nozzle 10 that discharges a continuous flow of a removal liquid toward the upper surface of the substrate W held by the spin chuck 5, and a rinse liquid nozzle 11 that discharges a continuous flow of a rinse liquid toward the upper surface of the substrate W held by the spin chuck 5.

[0058] The polymer-containing liquid nozzle 9 is an example of a polymer-containing liquid supply member that supplies a polymer-containing liquid to the substrate W held by the spin chuck 5. The removal liquid nozzle 10 is an example of a removal liquid supply member that supplies a removal liquid to the substrate W held by the spin chuck 5. The rinse liquid nozzle 11 is an example of a rinse liquid supply member that supplies a rinse liquid to the substrate W held by the spin chuck 5.

[0059] The plurality of processing liquid nozzles are each moved in a direction (horizontal direction) along the upper surface of the substrate W by a plurality of nozzle drive mechanisms (the first nozzle drive mechanism 25, the second nozzle drive mechanism 26, and the third nozzle drive mechanism 27).

[0060] Each nozzle driving mechanism can move the corresponding nozzle between a central position and a retracted position. The central position is a position where the nozzle faces the central region on the upper surface of the substrate W. The central region on the upper surface of the substrate W is a region including the rotation center (central portion CP) and the portion around the rotation center on the upper surface of the substrate W. The retracted position is a position where the nozzle does not face the upper surface of the substrate W and is a position outside the processing cup 7.

[0061] Each nozzle driving mechanism includes an arm (not shown) that supports the corresponding nozzle and an arm driving mechanism (not shown) that moves the corresponding arm in a direction along the upper surface of the substrate W (horizontal direction). Each arm driving mechanism includes an actuator such as an electric motor or an air cylinder.

[0062] Each processing liquid nozzle may be a rotary nozzle that rotates around a predetermined rotation axis, or may be a linear motion nozzle that linearly moves in the direction in which the corresponding arm extends. Each processing liquid nozzle may be configured to be movable in the vertical direction as well.

[0063] The polymer-containing liquid discharged from the polymer-containing liquid nozzle 9 contains a polymer, a photoacid generator, and a solvent.

[0064] The photoacid generator contained in the polymer-containing liquid has the property of generating an acid upon irradiation with light L. The photoacid generator is, for example, a sulfonium salt-based, iodonium salt-based, or nonionic photoacid generator. The sulfonium salt-based photoacid generator is an onium salt in which a sulfonium ion is the cationic part. The iodonium salt-based photoacid generator is an onium salt in which an iodonium ion is the cationic part. The onium salt as a photoacid generator is composed of a cationic part that absorbs the light L irradiated to the photoacid generator and an anionic part that serves as a source of the acid.

[0065] The photoacid generator contains, for example, any one of N-hydroxy-1,8-naphthalimide, 1,8-naphthalimide trifluoromethanesulfonate, and tris(4-methylphenyl)sulfonium trifluoromethanesulfonate.

[0066] The polymer contained in the polymer-containing liquid is preferably a polymer having the property of increasing the viscosity of the polymer-containing liquid. The polymer contains, for example, at least one of polyvinylpyrrolidone, polyethylene glycol, and polyacrylic acid-based polymers. The polyacrylic acid-based polymer is sodium polyacrylate, polyacrylic acid, or ammonium polyacrylate.

[0067] The solvent contained in the polymer-containing liquid has the property of dissolving the photoacid generator and the polymer. The solvent is, for example, a rinse liquid such as DIW (deionized water), an organic solvent such as IPA, or a mixture thereof.

[0068] The rinse liquid is, for example, water such as DIW (deionized water). However, the rinse liquid is not limited to DIW. The rinse liquid is not limited to DIW, and includes DIW, carbonated water, electrolyzed ionized water, hydrochloric acid water with a dilution concentration (for example, 1 ppm or more and 100 ppm or less), ammonia water with a dilution concentration (for example, 1 ppm or more and 100 ppm or less), or reduced water (water).

[0069] The organic solvent contains at least one of alcohols such as ethanol (EtOH) and isopropanol (IPA), ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether, ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate, propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE), lactate esters such as methyl lactate and ethyl lactate (EL), aromatic hydrocarbons such as toluene and xylene, and ketones such as acetone, methyl ethyl ketone, 2-heptanone, and cyclohexanone.

[0070] A polymer-containing liquid pipe 40 for guiding the polymer-containing liquid to the polymer-containing liquid nozzle 9 is connected to the polymer-containing liquid nozzle 9. A polymer-containing liquid valve 50 for opening and closing the polymer-containing liquid pipe 40 is provided in the polymer-containing liquid pipe 40. When the polymer-containing liquid valve is opened, a continuous flow of the polymer-containing liquid is discharged from the polymer-containing liquid nozzle 9.

[0071] The polymer-containing liquid valve 50 being provided in the polymer-containing liquid pipe 40 may mean that the polymer-containing liquid valve 50 is interposed in the polymer-containing liquid pipe 40. The same applies to other valves described below.

[0072] Although not shown in the figure, the polymer-containing liquid valve 50 includes a valve body having a valve seat provided therein, a valve element for opening and closing the valve seat, and an actuator for moving the valve element between an open position and a closed position. Other valves have a similar configuration.

[0073] When at least a part of the solvent evaporates from the polymer-containing liquid supplied onto the upper surface of the substrate W, the polymer-containing liquid on the substrate W changes into a semi-solid or solid polymer film. The semi-solid state means a state in which a solid component and a liquid component are mixed, or a state having a viscosity such that a certain shape can be maintained on the substrate W.

[0074] The solid state means a state in which no liquid component is contained and which is composed only of a solid component. A polymer film in which the solvent remains is referred to as a semi-solid film, and a polymer film in which the solvent has completely disappeared is referred to as a solid film. Since the polymer film is a semi-solid film or a solid film, it does not spread on the upper surface of the substrate W and remains at the position where it was formed.

[0075] The removal liquid discharged from the removal liquid nozzle 10 is a liquid for removing the polymer film from the upper surface of the substrate W. Specifically, the removal liquid removes the polymer film from the upper surface of the substrate W by at least either dissolution or decomposition of the polymer film. The polymer film remaining on the upper surface of the substrate W may be removed from the upper surface of the substrate W by being pushed out of the substrate by the energy acting from the liquid flow of the removal liquid.

[0076] The removal liquid discharged from the removal liquid nozzle 10 is, for example, a rinse liquid such as DIW, an organic solvent such as IPA, EtOH, acetone, an aqueous solution of tetramethylammonium hydroxide (TMAH solution), or a mixture thereof. The TMAH solution may be an aqueous solution of tetramethylammonium hydroxide or a methanol solution of tetramethylammonium hydroxide.

[0077] As the removal liquid, the liquids listed as the rinse liquid used as the solvent of the polymer film-containing liquid can also be used. As the removal liquid, the liquids listed as the organic solvent used as the solvent of the polymer film-containing liquid can also be used. That is, as the removal liquid, the same liquids as the solvent of the polymer film-containing liquid can be used.

[0078] A cleaning liquid pipe 41 for guiding the cleaning liquid to the cleaning liquid nozzle 10 is connected to the cleaning liquid nozzle 10. A cleaning liquid valve 51 for opening and closing the cleaning liquid pipe 41 is provided in the cleaning liquid pipe 41. When the cleaning liquid valve 51 is opened, a continuous flow of the cleaning liquid is discharged from the cleaning liquid nozzle 10.

[0079] The rinse liquid discharged from the rinse liquid nozzle 11 is, for example, water such as DIW (deionized water). As the rinse liquid discharged from the rinse liquid nozzle 11, the liquids listed as the rinse liquid used as the solvent of the polymer-containing liquid can be used.

[0080] A rinse liquid pipe 42 for guiding the rinse liquid to the rinse liquid nozzle 11 is connected to the rinse liquid nozzle 11. A rinse liquid valve 52 for opening and closing the rinse liquid pipe 42 is provided in the rinse liquid pipe 42. When the rinse liquid valve 52 is opened, a continuous flow of the rinse liquid is discharged from the rinse liquid nozzle 11.

[0081] The processing cup 7 includes a plurality (two in FIG. 2) of guards 28 for receiving the processing liquid scattered outward from the substrate W held by the spin chuck 5, a plurality (two in FIG. 2) of cups 29 for receiving the processing liquid guided downward by the plurality of guards 28, respectively, and a cylindrical outer wall member 30 surrounding the plurality of guards 28 and the plurality of cups 29.

[0082] Each guard 28 has a cylindrical form surrounding the spin chuck 5 in plan view. The upper end portion of each guard 28 is inclined inward of the guard 28. Each cup 29 has a form of an upwardly open annular groove. The plurality of guards 28 and the plurality of cups 29 are arranged coaxially.

[0083] The plurality of guards 28 are individually lifted and lowered by a guard lifting and lowering drive mechanism (not shown). The guard lifting and lowering drive mechanism includes, for example, a plurality of actuators for driving the plurality of guards 28 to be lifted and lowered, respectively. The plurality of actuators include at least one of an electric motor and an air cylinder.

[0084] The light emitting member 12 includes, for example, a light source 60 that emits light L and a housing 61 that houses the light source 60. The light emitting member 12 is supported, for example, on the upper wall 4a of the chamber 4. The upper wall 4a faces the upper surface of the substrate W held by the spin chuck 5 and is an example of a support wall that supports the light source 60. The housing 61 is attached to the upper wall 4a of the chamber 4.

[0085] The light L emitted from the light source 60 passes through the upper wall 4a of the chamber 4 and the housing 61 and is irradiated onto the peripheral portion of the upper surface of the substrate W held by the spin chuck 5 in the chamber 4. In the upper wall 4a of the chamber 4 and the housing 61, the portion through which the light L passes is formed of a transmissive member having light transmissibility such as quartz.

[0086] The light L emitted from the light source 60 is, for example, ultraviolet light having a wavelength of 1 nm or more and 400 nm or less. The light L emitted from the light source 60 is not limited to ultraviolet light and may be light that irradiates a photoacid generator to generate an acid. The light may be, for example, infrared light or visible light.

[0087] The light source 60 is, for example, a laser light source that emits laser light. The laser light source is, for example, an excimer lamp that emits excimer laser. Examples of the excimer laser include an ArF excimer laser (wavelength: 193 nm), a KrF excimer laser (wavelength: 248 nm), a XeCl excimer laser (wavelength: 308 nm), a XeF excimer laser (wavelength: 351 nm), and the like.

[0088] The light L emitted from the light source 60 is not limited to laser light. The light emitted from the light source 60 is preferably light having directivity. The light source 60 is not limited to a laser light source such as an excimer lamp and may be, for example, a xenon lamp, a mercury lamp, a deuterium lamp, an LED lamp, or the like. A power supply unit 62 such as a power source is connected to the light emitting member 12, and the light L is emitted from the light emitting member 12 by supplying power from the power supply unit 62.

[0089] The reflection suppression member 13 is formed of, for example, a light absorption material that absorbs stray light and scattered light. Therefore, the reflection suppression member 13 can be referred to as a light absorption member. The light absorption material is, for example, a carbon-based resin. The entire reflection suppression member 13 does not necessarily have to be formed of the light absorption material, and only the surface of the reflection suppression member 13 may be formed of the light absorption material.

[0090] The reflection suppression member 13 is moved by a reflection suppression member drive mechanism 31 in a direction along the upper surface of the substrate W (in the horizontal direction). The reflection suppression member drive mechanism 31 can move the reflection suppression member 13 between a peripheral position (the position shown in FIG. 3A described later) and a retracted position. The peripheral position is a position where the reflection suppression member 13 faces the peripheral portion of the upper surface of the substrate W. The retracted position is a position where the reflection suppression member 13 does not face the upper surface of the substrate W and is a position outside the processing cup 7.

[0091] The reflection suppression member drive mechanism 31 includes an arm 32 that supports the reflection suppression member 13 and an arm drive mechanism 33 that moves the reflection suppression member 13 in a direction along the upper surface of the substrate W (in the horizontal direction). The arm drive mechanism 33 includes an actuator such as an electric motor or an air cylinder.

[0092] The reflection suppression member 13 may be a rotary reflection suppression member that rotates around a predetermined rotation axis, or may be a linear motion reflection suppression member that linearly moves in the direction in which the corresponding arm extends. The reflection suppression member 13 may be configured to be movable in the vertical direction as well.

[0093] <Configuration of the reflection suppression member> FIG. 3A is a cross-sectional view taken along line IIIA-IIIA shown in FIG. 2. FIG. 3B is an enlarged view of region IIIB shown in FIG. 3A. FIG. 3C is a cross-sectional view taken along line IIIC-IIIC shown in FIG. 3B.

[0094] Hereinafter, with reference to a reference position inside the peripheral edge T as viewed from a direction orthogonal to the upper surface of the substrate W, the portion closer to the central portion CP than the reference position may be referred to as the radially inner side. Similarly, the portion closer to the peripheral edge T than the reference position may be referred to as the radially outer side. The peripheral edge T side of the substrate W is the side opposite to the central portion CP.

[0095] The light emitting member 12 irradiates light L onto a region (planned irradiation region) on the upper surface of the substrate W adjacent to the reflection suppressing member 13 from the radially outer side with respect to the reflection suppressing member 13. A region on the peripheral edge portion of the upper surface of the substrate W where the light L from the light emitting member 12 is irradiated is referred to as the irradiation region RA. The light L emitted from the light emitting member 12 is irradiated onto a predetermined range in the rotation direction RD at the peripheral edge portion of the upper surface of the substrate W. Therefore, the irradiation region RA is a region extending over a predetermined range in the rotation direction RD around the rotation axis A1 at the peripheral edge portion of the upper surface of the substrate W. The region extending over a predetermined range is a region that does not extend over the entire circumference in the rotation direction RD and extends over a range smaller than 360° in the rotation direction RD.

[0096] By rotating the substrate W around the rotation axis A1 while emitting the light L from the light emitting member 12, the entire circumference of the peripheral edge portion of the upper surface of the substrate W can be irradiated with the light L.

[0097] The reflection suppressing member 13 includes a first portion 70 that can be disposed at an adjacent position, and a pair of second portions 71 that are connected to the first portion 70 and are adjacent to the irradiation region RA from both sides in the rotation direction RD when the first portion 70 is located at the adjacent position. When the reflection suppressing member 13 is located at the peripheral edge position, the first portion 70 is located at the adjacent position.

[0098] The adjacent position is a position adjacent to the central portion CP side of the upper surface of the substrate W in the irradiation region RA. In other words, the adjacent position is a position adjacent to the irradiation region RA and closer to the central portion CP than the irradiation region RA. The adjacent position is, for example, a shielding position where a part of the light L emitted from the light emitting member 12 is blocked by the first portion 70. As shown by the two-dot chain line in FIG. 3C, the adjacent position may be a position where the entire light L emitted from the light emitting member 12 is irradiated onto the upper surface of the substrate W without being blocked by the first portion 70.

[0099] The first portion 70 has a facing surface 70a facing the upper surface of the substrate W in a state parallel to the upper surface of the substrate W when the first portion 70 is located at the adjacent position, and an orthogonal surface 70b connected to the facing surface 70a and orthogonal to the facing surface 70a.

[0100] <Electrical Configuration of Substrate Processing According to the First Embodiment> FIG. 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1. The controller 3 includes a microcomputer and controls the controlled objects provided in the substrate processing apparatus 1 according to a predetermined control program.

[0101] Specifically, the controller 3 includes a processor 3A (CPU) and a memory 3B in which a control program is stored. The controller 3 is configured to execute various controls for substrate processing by the processor 3A executing the control program.

[0102] In particular, the controller 3 is programmed to control the first transfer robot IR, the second transfer robot CR, the rotation drive mechanism 20, the first nozzle drive mechanism 25, the second nozzle drive mechanism 26, the third nozzle drive mechanism 27, the reflection suppression member drive mechanism 31, the energization unit 62, the suction valve 23, the polymer-containing liquid valve 50, the removal liquid valve 51, the rinse liquid valve 52, and the like.

[0103] By controlling the valves by the controller 3, the presence or absence of fluid discharge from the corresponding nozzle and the discharge flow rate of the fluid from the corresponding nozzle are controlled.

[0104] Each of the following steps is executed by the controller 3 controlling each member provided in the substrate processing apparatus 1. In other words, the controller 3 is programmed to execute each of the following steps.

[0105] Also, although typical members are illustrated in FIG. 4, it does not mean that members not illustrated are not controlled by the controller 3. The controller 3 can appropriately control each member provided in the substrate processing apparatus 1. Each modification described later and the members described in the second embodiment are also shown in FIG. 4, and these members are also controlled by the controller 3.

[0106] <An example of substrate processing> FIG. 5 is a flowchart for explaining an example of the substrate processing executed by the substrate processing apparatus 1. FIGS. 6A to 6C are schematic diagrams for explaining the state of the substrate W and its surroundings when the substrate processing is being performed.

[0107] In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 5, a substrate loading step (step S1), a polymer film forming step (step S2), a light irradiation step (step S3), a polymer film removing step (step S4), a rinse step (step S5), a spin drying step (step S6), and a substrate unloading step (step S7) are executed. Hereinafter, with reference mainly to FIGS. 2 and 5, the details of the substrate processing will be described. FIGS. 6A to 6C will be referred to as appropriate.

[0108] First, the untreated substrate W is carried into the processing unit 2 from the carrier C by the second transfer robot CR (see FIG. 1) and passed to the spin chuck 5 (substrate loading step: step S1). Thereby, the substrate W is held in the processing posture by the spin chuck 5 (substrate holding step). At this time, the substrate W is held by the spin chuck 5 such that the first main surface W1 faces upward. The substrate W continues to be held by the spin chuck 5 until the spin drying step (step S6) is completed. With the substrate W held by the spin chuck 5, the rotation drive mechanism 20 starts rotating the substrate W (substrate rotation step).

[0109] After the second transfer robot CR retreats from the chamber 4, a polymer film forming step (step S2) for forming a polymer film 100 (see FIG. 6B) on the upper surface of the substrate W is executed.

[0110] Specifically, the first nozzle drive mechanism 25 moves the polymer-containing liquid nozzle 9 to the processing position. The processing position of the polymer-containing liquid nozzle 9 is, for example, the central position. With the polymer-containing liquid nozzle 9 positioned at the processing position, the polymer-containing liquid valve 50 is opened. Thereby, as shown in FIG. 6A, the polymer-containing liquid is supplied (ejected) from the polymer-containing liquid nozzle 9 toward the central region of the upper surface of the substrate W (polymer-containing liquid supply step, polymer-containing liquid ejection step). The polymer-containing liquid ejected from the polymer-containing liquid nozzle 9 lands on the central region of the upper surface of the substrate W.

[0111] When supplying the polymer-containing liquid to the upper surface of the substrate W, the substrate W may be rotated at a low speed (for example, 10 rpm) (low-speed rotation step). Alternatively, when supplying the polymer-containing liquid to the upper surface of the substrate W, the rotation of the substrate W may be stopped. By setting the rotation speed of the substrate W to a low speed or stopping the rotation of the substrate W, the polymer-containing liquid supplied to the substrate W stays in the central region of the upper surface of the substrate W. Thereby, the amount of the polymer-containing liquid used can be reduced as compared with the case where the substrate W is rotated at a high speed to discharge the polymer-containing liquid on the upper surface of the substrate W outside the substrate W.

[0112] After supplying the polymer-containing liquid onto the upper surface of the substrate W for a predetermined period, the polymer-containing liquid valve 50 is closed to stop the discharge of the polymer-containing liquid from the polymer-containing liquid nozzle 9. After the polymer-containing liquid valve 50 is closed, the polymer-containing liquid nozzle 9 is moved to the retracted position by the first nozzle drive mechanism 25.

[0113] After the polymer-containing liquid valve 50 is closed, the rotation of the substrate W is accelerated so that the rotation speed of the substrate W becomes a predetermined spin-off speed (rotation acceleration step). The spin-off speed is, for example, 1500 rpm. The rotation of the substrate W at the spin-off speed is continued for, for example, 30 seconds.

[0114] Due to the centrifugal force caused by the rotation of the substrate W, the polymer-containing liquid remaining in the central region of the upper surface of the substrate W spreads toward the peripheral edge of the upper surface of the substrate W and is spread over the entire upper surface of the substrate W. A part of the polymer-containing liquid on the substrate W scatters out of the substrate W from the peripheral edge of the substrate W, and the liquid film of the polymer-containing liquid on the substrate W is thinned (spin-off step). The polymer-containing liquid on the upper surface of the substrate W does not need to scatter out of the substrate W, and it may be spread over the entire upper surface of the substrate W by the action of the centrifugal force of the rotation of the substrate W.

[0115] The centrifugal force caused by the rotation of the substrate W acts not only on the polymer-containing liquid on the substrate W but also on the gas in contact with the polymer-containing liquid on the substrate W. Therefore, due to the action of the centrifugal force, an air flow is formed in which the gas moves from the central portion CP side to the peripheral edge T side of the upper surface of the substrate W. By this air flow, the solvent in the gaseous state in contact with the polymer-containing liquid on the substrate W is excluded from the atmosphere in contact with the substrate W. Therefore, as shown in FIG. 6B, the evaporation (volatilization) of the solvent from the polymer-containing liquid on the substrate W is promoted to form the polymer film 100 (polymer film forming step). In this way, the polymer-containing liquid nozzle 9 functions as a polymer film forming member.

[0116] Since the polymer film 100 has a higher viscosity than the polymer-containing liquid, it remains on the substrate W without being completely removed from the substrate W even though the substrate W is rotating. In this embodiment, the polymer film 100 is formed by spreading the polymer-containing liquid remaining in the central region of the upper surface of the substrate W over the entire upper surface of the substrate W by centrifugal force. Therefore, the amount of the polymer-containing liquid used can be reduced as compared with the case where the discharge of the polymer-containing liquid from the polymer-containing liquid nozzle 9 is continued until the polymer-containing liquid spreads over the entire upper surface of the substrate W.

[0117] Note that the substrate W may be rotated at a high spin-off speed from the start of the supply of the polymer-containing liquid.

[0118] After the polymer film 100 is formed on the upper surface of the substrate W, a light irradiation step (step S3) of irradiating the peripheral portion of the upper surface of the substrate W with light L is executed. Specifically, the reflection suppression member driving mechanism 31 moves the reflection suppression member 13 to the peripheral position. As shown in FIG. 6C, with the reflection suppression member 13 positioned at the peripheral position, by supplying power from the energization unit 62 to the light emitting member 12, the peripheral portion of the upper surface of the substrate W is irradiated with the light L (irradiation step). An acid is generated in the polymer film 100 on the irradiation region RA. The generated acid etches the peripheral portion of the upper surface of the substrate W (etching step).

[0119] Note that the polymer film 100 is preferably a semi-solid film. If the polymer film 100 is a semi-solid film, the acid, which is an electrolyte, easily releases protons in the polymer film 100. Thereby, etching can be promoted.

[0120] The irradiation region RA is a region extending over a predetermined range in the rotational direction RD around the rotation axis A1. During the irradiation of the light L onto the upper surface of the substrate W, the substrate W is rotating. Therefore, the peripheral portion of the upper surface of the substrate W can be uniformly irradiated with light over the entire circumference, and the peripheral portion of the upper surface of the substrate W can be uniformly etched over the entire circumference. The region (etching region EA) etched at the peripheral portion of the upper surface of the substrate W has an annular shape in plan view (see FIG. 3A).

[0121] After irradiating the peripheral portion of the upper surface of the substrate W with light L for a predetermined period, a polymer film removing step (step S4) is performed in which a removing liquid is supplied to the upper surface of the substrate W to remove the polymer film 100 from the upper surface of the substrate W.

[0122] Specifically, the supply of power to the light emitting member 12 by the energization unit 62 is stopped, and the reflection suppressing member 13 is moved to the retracted position. Instead, the second nozzle driving mechanism 26 moves the removing liquid nozzle 10 to the processing position. The processing position of the removing liquid nozzle 10 is, for example, the central position. With the removing liquid nozzle 10 positioned at the processing position, the removing liquid valve 51 is opened. Thereby, the removing liquid is supplied (ejected) from the removing liquid nozzle 10 toward the central region of the upper surface of the substrate W (removing liquid supply step, removing liquid ejection step).

[0123] The removing liquid ejected from the removing liquid nozzle 10 lands on the central region of the upper surface of the substrate W. The removing liquid that has landed on the upper surface of the substrate W is spread over the entire upper surface of the substrate W by the action of centrifugal force. The removing liquid on the substrate W scatters outside the substrate W from the peripheral portion of the substrate W. The polymer film 100 on the substrate W is discharged outside the substrate W together with the removing liquid.

[0124] After supplying the removing liquid to the upper surface of the substrate W for a predetermined period, a rinsing step (step S5) is performed in which a rinsing liquid is supplied to the upper surface of the substrate W to rinse the upper surface of the substrate W.

[0125] Specifically, the removing liquid valve 51 is closed to stop the supply of the removing liquid, and the second nozzle driving mechanism 26 retracts the removing liquid nozzle 10 to the retracted position. Instead, the third nozzle driving mechanism 27 moves the rinsing liquid nozzle 11 to the processing position. The processing position of the rinsing liquid nozzle 11 is, for example, the central position. With the rinsing liquid nozzle 11 positioned at the processing position, the rinsing liquid valve 52 is opened. Thereby, the rinsing liquid is supplied (ejected) from the rinsing liquid nozzle 11 toward the central region of the upper surface of the substrate W (rinsing liquid supply step, rinsing liquid ejection step).

[0126] The rinse liquid discharged from the rinse liquid nozzle 11 lands on the central region of the upper surface of the substrate W. The rinse liquid that has landed on the upper surface of the substrate W is spread over the entire upper surface of the substrate W by the action of centrifugal force. The rinse liquid on the substrate W scatters out of the substrate W from the peripheral portion of the substrate W. Thereby, the upper surface of the substrate W is cleaned.

[0127] Next, a spin-drying process (step S6) of rotating the substrate W at high speed to dry the upper surface of the substrate W is executed. Specifically, the rinse liquid valve 52 is closed to stop the supply of the rinse liquid to the upper surface of the substrate W, and the third nozzle drive mechanism 27 retracts the rinse liquid nozzle 11 to the retracted position. Then, the rotation drive mechanism 20 accelerates the rotation of the substrate W and rotates the substrate W at high speed (for example, 1500 rpm). Thereby, a large centrifugal force acts on the rinse liquid adhering to the substrate W, and the rinse liquid is shaken off around the substrate W.

[0128] After the spin-drying process (step S6), the rotation drive mechanism 20 stops the rotation of the substrate W. Thereafter, the second transfer robot CR enters the processing unit 2, receives the processed substrate W from the spin chuck 5, and carries it out of the processing unit 2 (substrate carry-out process: step S7). The substrate W is transferred from the second transfer robot CR to the first transfer robot IR and stored in the carrier C by the first transfer robot IR.

[0129] <Changes in the peripheral portion of the upper surface of the substrate during substrate processing> Figures 7A to 7E are schematic diagrams for explaining the changes in the peripheral portion of the upper surface of the substrate W during substrate processing.

[0130] Figure 7A shows the state of the peripheral portion of the substrate W before the start of substrate processing. The peripheral portion of the substrate W is also referred to as a bevel portion. The peripheral portion of the upper surface of the substrate W is also the upper surface of the bevel portion, and the peripheral portion of the lower surface of the substrate W is also the lower surface of the bevel portion.

[0131] As shown in FIG. 7A, the substrate W includes, for example, a semiconductor layer 101 and a film 102 to be processed formed on the semiconductor layer 101. The film 102 to be processed is exposed at least at the peripheral portion of the upper surface of the substrate W. The film 102 to be processed may be exposed over the entire upper surface of the substrate W. The film 102 to be processed is made of, for example, SiN (silicon nitride), TiN (titanium nitride), SiO2 (silicon oxide), W (tungsten), or the like.

[0132] Unlike this embodiment, instead of the semiconductor layer 101, a stacked structure composed of at least any one of a semiconductor layer, an insulator layer, and a metal layer may be provided, or a single-layer structure of a semiconductor layer, an insulator layer, or a metal layer may be provided.

[0133] FIG. 7B shows the state of the peripheral portion of the upper surface of the substrate W after the polymer film forming step (step S2). As shown in FIG. 7B, when the polymer film forming step is executed, a polymer film 100 is formed on the upper surface of the substrate W. In this substrate treatment, the polymer film 100 is formed over the entire upper surface of the substrate W. The polymer-containing liquid supplied to the upper surface of the substrate W in the polymer film forming step moves to the peripheral portion of the lower surface of the substrate W through the peripheral edge T (tip) of the substrate W. Therefore, as shown in FIG. 7B, the polymer film 100 is also formed on the peripheral portion of the lower surface of the substrate W.

[0134] FIG. 7C shows the state of the peripheral portion of the substrate W during the execution of the light irradiation step (step S3). FIG. 7C shows a state in which the reflection suppression member 13 is located at the shielding position in the light irradiation step. By disposing the reflection suppression member 13 at the shielding position, the irradiation region RA can be made smaller compared to the case where the reflection suppression member 13 is disposed at a position where a part of the light L is not blocked by the reflection suppression member 13. That is, the size of the irradiation region RA can be adjusted (irradiation region adjustment step).

[0135] FIG. 7D shows the state of the peripheral portion of the substrate W after substrate processing. By irradiating light L onto the peripheral portion of the upper surface of the substrate W, at least a part of the film 102 to be processed is dissolved (etched) by the acid generated in the polymer film 100. Therefore, the etched film 102 to be processed and the polymer film 100 are both discharged outside the substrate W by the removal liquid supplied to the upper surface of the substrate W after light irradiation. As a result, as shown in FIG. 7D, the film 102 to be processed is removed from the region (etching region EA) where the light L is irradiated on the peripheral portion of the upper surface of the substrate W.

[0136] <Summary of the First Embodiment> According to the first embodiment of the present invention, the polymer film 100 is formed on the upper surface of the substrate W by the polymer-containing liquid nozzle 9. With the polymer film 100 formed on the upper surface of the substrate W, by irradiating the light L emitted from the light emitting member 12 onto the peripheral portion of the upper surface of the substrate W, an acid can be generated in the polymer film 100. The peripheral portion of the upper surface of the substrate W is etched by the acid generated in the polymer film 100. Thus, the region (irradiation region RA) where the light L is irradiated on the peripheral portion of the upper surface of the substrate W is etched.

[0137] Since the polymer film 100 contains a polymer, the fluidity of the polymer film 100 is reduced. Therefore, the acid generated in the polymer film 100 tends to stay at the position where it is generated. Accordingly, the width of the region (etching region EA) etched at the peripheral portion of the upper surface of the substrate W, that is, the etching width EW (see FIG. 3A) can be precisely controlled. The etching width EW corresponds to the distance between the periphery T (tip) and the end portion (center side end portion) of the etching region EA on the center portion CP side. The etching width EW is, for example, 0.5 mm or more and 5 mm or less.

[0138] According to the first embodiment, the reflection suppression member 13 includes a first portion 70 that can be disposed at an adjacent position adjacent to the central portion CP side of the upper surface of the substrate W in the irradiation region RA. Therefore, even when the light L is reflected from the irradiation region RA and irradiated onto the first portion 70, the reflection of the light L from the reflection suppression member 13 is suppressed. Therefore, it is possible to suppress the light L reflected from the irradiation region RA from being irradiated to a position closer to the central portion CP of the upper surface than the reflection suppression member 13 on the upper surface of the substrate W. Therefore, the etching width EW can be controlled more precisely by the reflection suppression member 13.

[0139] According to the first embodiment, on the peripheral portion of the upper surface of the substrate W, the light L is emitted from the light emitting member 12 toward a predetermined range in the rotational direction RD. By irradiating the peripheral portion of the upper surface of the substrate W while rotating the substrate W, the peripheral portion of the upper surface of the substrate W can be etched over the entire circumference. Therefore, since the light L is irradiated to a predetermined range on the peripheral portion of the upper surface of the substrate W, the irradiation unevenness can be reduced as compared with the case where the light L is irradiated simultaneously over the entire area of the peripheral portion of the upper surface of the substrate W. Therefore, the etching width EW can be precisely controlled over the entire circumference of the substrate W.

[0140] In the first embodiment, etching is performed by irradiating the light L. Different from the first embodiment, in etching using a continuous flow of the etching solution, after the etching solution adheres to the upper surface of the substrate W, the upper surface of the substrate W spreads rapidly. Also, different from the first embodiment, in etching by heating, it is difficult to heat only a partial region of the peripheral portion of the upper surface of the substrate W.

[0141] On the other hand, in the first embodiment, by using the reflection suppression member 13, it is possible to suppress the light L reflected from the peripheral portion of the upper surface of the substrate W from being irradiated to a position closer to the central portion CP than the first portion 70 of the reflection suppression member 13. Therefore, the etching width EW can be precisely controlled as compared with etching by a continuous flow of the etching solution and etching by heating. Further, if a light emitting member configured to emit a laser beam having directivity is used as the light emitting member 12, the etching width EW can be precisely controlled.

[0142] Here, by performing substrate processing, the semiconductor layer 101 is exposed at the peripheral portion of the upper surface of the substrate W. Therefore, during dry etching that can be performed after the substrate processing by the substrate processing apparatus 1, the exposed region EX (see FIG. 7D) where the semiconductor layer 101 is exposed at the peripheral portion of the upper surface of the substrate W may be damaged. Due to the damage, unevenness may occur in the exposed region EX, and particles or the like may enter the inside of the concave portions constituting the unevenness.

[0143] According to the first embodiment, since the etching width EW can be precisely controlled by irradiating the light L, the width of the exposed region EX can be reduced. Therefore, the region damaged by dry etching can be reduced. As a result, the generation of particles can be suppressed. Note that the width of the exposed region EX corresponds to the distance between the peripheral edge T of the substrate W and the radially inner end of the exposed region EX.

[0144] According to the first embodiment, when the first portion 70 is located at the adjacent position, the pair of second portions 71 are adjacent to the irradiation region RA from both sides in the rotation direction RD. Therefore, even when the light L is reflected from the irradiation region RA and irradiates the second portion 71, the reflection of the light L from the reflection suppression member 13 is suppressed. Therefore, it is possible to suppress the light L reflected from the irradiation region RA from irradiating the opposite side of the irradiation region RA across the reflection suppression member 13 in the rotation direction RD. Therefore, the etching width EW can be more precisely controlled by the reflection suppression member 13.

[0145] According to the first embodiment, the adjacent position of the first portion 70 of the reflection suppression member 13 is a shielding position where the first portion 70 shields a part of the light L emitted from the light emitting member 12. Therefore, by controlling the position of the first portion 70, the size of the irradiation region RA can be controlled. Thereby, the etching width EW can be controlled.

[0146] According to the first embodiment, the first portion 70 of the reflection suppression member 13 has an opposing surface 70a that faces the upper surface of the substrate W in a state parallel to the upper surface of the substrate W when the first portion 70 is located at an adjacent position, and an orthogonal surface 70b that is connected to the opposing surface 70a and is orthogonal to the opposing surface 70a. Therefore, it is possible to suppress the light L emitted from the light emitting member 12 from being irradiated at a position closer to the central portion CP of the upper surface of the substrate W than the orthogonal surface 70b. Therefore, the irradiation region RA can be defined along the orthogonal surface 70b. Accordingly, the etching width EW can be precisely controlled.

[0147] According to the first embodiment, the light source 60 is supported by the upper wall 4a with respect to the upper surface of the substrate W. Therefore, the light L can be irradiated to the peripheral portion of the upper surface of the substrate W without changing the traveling direction of the light L emitted from the light source 60. Therefore, a member for changing the traveling direction of the light L can be omitted.

[0148] <Substrate processing according to the first modification> FIGS. 8A to 8C are flowcharts for explaining substrate processing according to the first modification.

[0149] The difference between the substrate processing according to the first modification shown in FIGS. 8A to 8C and the substrate processing shown in FIG. 5 is that in the substrate processing according to the first modification, the polymer film 100 is formed in the peripheral region PA without forming the polymer film 100 in the inner region IA on the central portion CP side of the upper surface of the substrate W than the peripheral region PA. The peripheral region PA on the upper surface of the substrate W is an annular region including the peripheral portion of the upper surface of the substrate W and its periphery. The inner region IA is an annular region between the central region CA and the peripheral region PA.

[0150] Hereinafter, the substrate processing according to the first modification will be described in detail. In the substrate processing according to the first modification, as shown in FIG. 8A, the first nozzle driving mechanism 25 moves the polymer-containing liquid nozzle 9 to a peripheral position facing the peripheral region PA on the upper surface of the substrate W. With the polymer-containing liquid nozzle 9 positioned at the peripheral position, the polymer-containing liquid valve 50 is opened. As a result, as shown in FIG. 8A, the polymer-containing liquid is supplied (ejected) from the polymer-containing liquid nozzle 9 toward the peripheral region PA on the upper surface of the substrate W (polymer-containing liquid supply step, polymer-containing liquid ejection step). The polymer-containing liquid supplied to the peripheral region PA on the upper surface of the substrate W moves toward the peripheral edge T side of the substrate W.

[0151] After the polymer-containing liquid valve 50 is closed, the rotation of the substrate W is accelerated so that the rotation speed of the substrate W becomes a predetermined spin-off speed (rotation acceleration step). The spin-off speed is, for example, 1500 rpm. The rotation of the substrate W at the spin-off speed is continued for, for example, 30 seconds. A part of the polymer-containing liquid on the substrate W scatters out of the substrate W from the peripheral portion of the substrate W, and the liquid film of the polymer-containing liquid on the substrate W is thinned (spin-off step). The polymer-containing liquid on the upper surface of the substrate W does not need to scatter out of the substrate W and may spread over the entire peripheral portion of the upper surface of the substrate W by the action of the centrifugal force of the rotation of the substrate W.

[0152] Due to the action of the centrifugal force caused by the rotation of the substrate W, an air flow is formed in which the gas in contact with the polymer-containing liquid on the substrate W moves from the central portion CP side to the outside on the upper surface of the substrate W. By this air flow, the gaseous solvent in contact with the polymer-containing liquid on the substrate W is excluded from the atmosphere in contact with the substrate W. Therefore, as shown in FIG. 8B, the evaporation (volatilization) of the solvent from the polymer-containing liquid on the substrate W is promoted, and the polymer film 100 is formed (polymer film forming step). The polymer film 100 has an annular shape in plan view.

[0153] Thereafter, similar to the substrate processing shown in FIG. 5, as shown in FIG. 8C, a light irradiation step (step S3) of irradiating light L onto the peripheral portion of the upper surface of the substrate W is performed. The polymer film 100 preferably reaches the center portion CP side of the substrate W rather than the irradiation region RA. In other words, it is preferable that the radially inner end of the polymer film 100 is located on the center portion CP side rather than the radially inner end of the irradiation region RA.

[0154] After the light irradiation step (step S3), a polymer film removal step (step S4) to a substrate unloading step (step S7) are performed.

[0155] By performing the substrate processing according to the first modification example, it is possible to precisely control the etching width EW of the peripheral portion of the upper surface of the substrate W while reducing the consumption amount of the polymer film 100.

[0156] <Substrate Processing According to the Second Modification Example> FIG. 9 is a flowchart for explaining the substrate processing according to the second modification example. FIGS. 10A to 10E are schematic diagrams for explaining the changes in the peripheral portion of the upper surface of the substrate W during the substrate processing according to the second modification example.

[0157] The difference between the substrate processing according to the second modification example shown in FIGS. 9 to 10E and the substrate processing shown in FIG. 5 is that in the substrate processing according to the second modification example, the polymer film formation step (step S2) to the rinse step (step S5) are performed a plurality of times. Performing the polymer film formation step (step S2) to the rinse step (step S5) a plurality of times is called cycle etching. In cycle etching, the polymer film formation step and the light irradiation step are alternately performed a plurality of times.

[0158] Hereinafter, an example in which cycle etching is performed three times will be described. The first light irradiation step is referred to as the first light irradiation step, and the light irradiation step performed after the first light irradiation step is referred to as the second light irradiation step. And the last light irradiation step is referred to as the third light irradiation step.

[0159] FIG. 10A shows the state of the peripheral portion of the upper surface of the substrate W when the first light irradiation step (step S3) is executed. The position of the reflection suppression member 13 in the first light irradiation step is referred to as the first adjacent position. The first adjacent position may be a shielding position or a position that does not block the light L emitted from the light emitting member 12. The light L emitted from the light emitting member 12 is irradiated onto the peripheral portion of the upper surface of the substrate W. In the first light irradiation step, the region on the substrate W irradiated with the light L is referred to as the first irradiation region RA1.

[0160] After the first light irradiation step (step S3), by executing the polymer film removal step (step S4), as shown in FIG. 10B, the portion of the processing target film 102 etched in the first light irradiation step is removed. Therefore, a step 104 is formed in the processing target film 102 so that the processing target film 102 becomes thinner toward the periphery T (tip) of the substrate W.

[0161] After the rinse step (step S5) and the polymer film formation step (step S2) are executed, the second light irradiation step (step S3) is executed.

[0162] FIG. 10C shows the state of the peripheral portion of the upper surface of the substrate W when the second light irradiation step (step S3) is executed. The position of the reflection suppression member 13 in the second light irradiation step is referred to as the second adjacent position.

[0163] The second adjacent position is a shielding position. The second adjacent position is a position radially outside the first adjacent position. In other words, the second adjacent position is a position closer to the periphery T than the first adjacent position. A part of the light L emitted from the light emitting member 12 is blocked by the reflection suppression member 13. In the second light irradiation step, the region on the substrate W irradiated with the light L is referred to as the second irradiation region RA2.

[0164] The radially inner end of the first irradiation region RA1 is located closer to the center CP side (radially inner side) of the upper surface of the substrate W than the radially inner end of the second irradiation region RA2. In other words, the first irradiation region RA1 reaches further radially inward than the second irradiation region RA2.

[0165] Thus, in the substrate processing according to the second modification example, an irradiation region adjustment step of moving the reflection suppression member 13 to adjust the size of the irradiation region RA is executed. Specifically, the reflection suppression member 13 is moved so that the first irradiation region RA1 reaches more radially inward than the second irradiation region RA2. More specifically, after the first light irradiation step, the reflection suppression member 13 located at the first adjacent position is moved to the retracted position, and in the second light irradiation step, it is moved to the second adjacent position.

[0166] After the second light irradiation step (step S3), by executing the polymer film removal step (step S4), as shown in FIG. 10D, the portion of the processing target film 102 etched in the second light irradiation step is removed. Since the first irradiation region RA1 reaches more radially inward than the second irradiation region RA2, a part of the region etched by the first light irradiation step at the peripheral portion of the upper surface of the substrate W is not etched. Therefore, another step 104 is formed in the processing target film 102 so that the processing target film 102 becomes thinner toward the peripheral edge T (tip) of the substrate W.

[0167] Furthermore, thereafter, by executing the polymer film formation step (step S2), the third light irradiation step (step S3), and the polymer film removal step (step S4), the processing target film 102 between a predetermined distance from the peripheral edge T (tip) of the substrate W is removed. As a result, another step 104 is formed, and the semiconductor layer 101 is exposed to form an exposed region EX. The plurality of steps 104 are located at the outer peripheral end of the processing target film 102.

[0168] Thus, by executing the substrate processing according to the second modification example, a plurality of steps 104 are formed at the outer peripheral end of the processing target film 102 so that the processing target film 102 becomes thinner toward the peripheral edge T of the substrate W. As a result, unintended peeling of the processing target film 102 after the substrate processing can be suppressed.

[0169] As shown in FIGS. 10A to 10E, an example in which cycle etching is performed three times is described. However, cycle etching may be performed four or more times, or may be performed twice. In any case, a plurality of steps 104 are formed in the processing target film 102 so that the processing target film 102 becomes thinner toward the periphery T of the substrate W and the semiconductor layer 101 is exposed. Therefore, peeling of the unintended processing target film 102 can be suppressed.

[0170] <Modification Example of Processing Unit> Next, with reference to FIGS. 11 to 14, the processing unit 2 according to the first to third modification examples will be described.

[0171] FIG. 11 is a schematic diagram for explaining the reflection suppression member 13 provided in the processing unit 2 according to the first modification example.

[0172] The reflection suppression member 13 according to the first modification example is configured to be able to adjust the width L1 of the first portion 70. The first portion 70 includes a main body portion 72 and an adjustment portion 73 fixed at a position in contact with the main body portion 72 between a pair of second portions 71. Therefore, even when the reflection suppression member driving mechanism 31 (see FIG. 2) is not provided, or when the accuracy of the movement in the direction along the upper surface of the substrate W (horizontal direction) by the reflection suppression member driving mechanism 31 is insufficient, the size of the irradiation region RA can be accurately adjusted.

[0173] FIG. 12 is a schematic diagram for explaining the reflection suppression member 13 provided in the processing unit 2 according to the second modification example. The reflection suppression member 13 according to the second modification example is not provided with a pair of second portions 71, and the reflection suppression member 13 includes a first portion 70 having a rectangular shape in plan view. If the reflection suppression member 13 has a first portion 70 that can be arranged at an adjacent position, it is possible to suppress the light L reflected from the irradiation region RA from being irradiated at a position closer to the center portion CP of the upper surface of the substrate W than the reflection suppression member 13. That is, the second portion 71 is not necessarily required. Different from FIGS. 3A and 12, only one of the second portions 71 is provided, and a configuration in which the single second portion 71 is adjacent to the irradiation region RA from one of the rotation directions RD can also be adopted.

[0174] FIG. 13 is a schematic diagram for explaining a reflection suppressing member 13 provided in the processing unit 2 according to the third modification. FIG. 14 is a cross-sectional view taken along line XIV-XIV shown in FIG. 13. The reflection suppressing member 13 according to the third modification is not provided with a pair of second portions 71, similar to the reflection suppressing member 13 according to the second modification. Further, the reflection suppressing member 13 according to the third modification includes a first portion 70 having a circular shape in plan view. Specifically, the reflection suppressing member 13 has a central axis A2, and when the first portion 70 is located at an adjacent position, the central axis A2 is located on the rotation axis A1.

[0175] Therefore, if the first portion 70 is arranged at an adjacent position, it is possible to constantly suppress the light L from being irradiated to a position closer to the central portion CP of the upper surface of the substrate W than the first portion 70 in the entire region of the rotation direction RD. Accordingly, it is possible to highly reliably suppress, over the entire circumference of the upper surface of the substrate W, the light L reflected from the irradiation region RA from being irradiated to a position closer to the central portion CP of the upper surface of the substrate W than the irradiation region RA.

[0176] Unlike the third modification, the first portion 70 may have an annular shape in plan view. Further, the first portion 70 may have an annular or circular shape in plan view, and a second portion 71 adjacent to the irradiation region RA may be provided from at least one of the rotation directions RD. For example, the reflection suppressing member 13 may be configured to be able to face the entire upper surface of the substrate W except for the irradiation region RA.

[0177] <Configuration of the substrate processing apparatus according to the second embodiment> FIG. 15 is a schematic diagram for explaining the configuration of the processing unit 2 provided in the substrate processing apparatus 1A according to the second embodiment. In FIG. 15, for the configurations equivalent to those shown in FIGS. 1 to 14 described above, the same reference numerals as those in FIG. 1 and the like are given and the description thereof is omitted. The same applies to FIGS. 16A and 16B described later.

[0178] The main difference between the substrate processing apparatus 1A according to the second embodiment and the substrate processing apparatus 1 according to the first embodiment is that the processing unit 2 further includes a direction changing member 14 that changes the traveling direction of the light L so as to approach the orthogonal direction (for example, the vertical direction) with respect to the first main surface of the substrate W.

[0179] The light emitting member 12 provided in the processing unit 2 according to the second embodiment is supported by the side wall 4b of the chamber 4. The housing 61 is attached to the side wall 4b from the outside of the chamber 4. Therefore, the light L emitted from the light emitting member 12 is in a direction inclined with respect to the vertical direction. The light emitted from the light source 60 passes through the side wall 4b of the chamber 4 and the housing 61 and is irradiated onto the peripheral portion of the upper surface of the substrate W held by the spin chuck 5 in the chamber 4. In the side wall 4b of the chamber 4 and the housing 61, the portion through which the light L passes is formed of a transmissive member having light transmissivity such as quartz.

[0180] The direction changing member 14 includes, for example, a reflection mirror that reflects the light L. In relation to the direction changing member 14, the processing unit 2 includes a rotation support shaft 80 that rotatably supports the direction changing member 14, and a rotation support shaft drive mechanism 81 that rotates the direction changing member 14 via the rotation support shaft 80. The rotation support shaft drive mechanism 81 includes an actuator such as an electric motor or an air cylinder. The rotation support shaft 80 is fixed to the chamber 4 in a rotatable state. The rotation support shaft 80 may be fixed to the side wall 4b or may be fixed to the upper wall 4a.

[0181] By using the substrate processing apparatus 1A according to the second embodiment, the same substrate processing as the substrate processing according to the first embodiment (for example, the substrate processing shown in FIG. 5 and the substrate processing shown in FIG. 9) can be executed. The substrate processing shown in FIGS. 8A to 8C can of course also be executed.

[0182] FIGS. 16A and 16B are schematic diagrams for explaining the peripheral portion of the substrate W and the state around it when the substrate processing is being performed by the substrate processing apparatus 1A according to the second embodiment.

[0183] In the light irradiation step (step S2) of substrate processing by the substrate processing apparatus 1A according to the second embodiment, as shown in FIG. 16A, the traveling direction of the light L emitted from the light emitting member 12 is changed by the direction changing member 14. The light L whose traveling direction has been changed by the direction changing member 14 is irradiated onto the peripheral portion of the upper surface of the substrate W (irradiation step). As shown in FIG. 16B, the processing target film 102 is removed from the region (etching region EA) on the upper surface of the substrate W where the light L is irradiated.

[0184] According to the second embodiment, even if the traveling direction of the light L emitted from the light emitting member 12 is a direction along the upper surface of the substrate W (for example, the horizontal direction), the traveling direction of the light L can be made closer to the direction perpendicular to the upper surface of the substrate W (for example, the vertical direction). Therefore, the degree of freedom in arranging the light emitting member 12 can be improved. Further, by rotating the rotation support shaft 80, the position of the irradiation region RA on the substrate W can be adjusted.

[0185] <Configuration of the processing unit according to the first modification of the second embodiment> Next, with reference to FIGS. 17A to 22, the processing unit 2 according to the first to fourth modifications of the second embodiment will be described.

[0186] FIGS. 17A and 17B are schematic diagrams for explaining the configuration of the processing unit 2 according to the first modification of the second embodiment.

[0187] As shown in FIG. 17A, the first portion 70 of the reflection suppression member 13 according to the first modification of the second embodiment has a facing surface 70a and an inclined surface 70c that is connected to the facing surface 70a inside the first portion 70 so as to form an acute angle with the facing surface 70a and is inclined with respect to the facing surface 70a.

[0188] According to the first modification of the second embodiment, it is possible to suppress the light L emitted from the light emitting member 12 from being irradiated at a position closer to the central portion CP than the inclined surface 70c. Further, as shown in FIG. 17A, by emitting the light L from the light emitting member 12 along the inclined surface 70c, the processing target film 102 can be etched obliquely on the upper surface of the substrate W. As a result, as shown in FIG. 17B, the radially outer end of the processing target film 102 at the peripheral portion of the upper surface of the substrate W can be formed into a tapered shape. As a result, peeling of the processing target film 102 can be suppressed after substrate processing.

[0189] FIG. 18 is a schematic diagram for explaining the configuration of the processing unit 2 according to the second modification of the second embodiment. As shown in FIG. 18, the direction changing member 14 according to the second modification of the second embodiment may be supported by the arm 32. Therefore, the direction changing member 14 can move with respect to the substrate W together with the reflection suppressing member 13.

[0190] FIG. 19 is a schematic diagram for explaining the configuration of the processing unit 2 according to the third modification of the second embodiment. As shown in FIG. 19, the processing unit 2 according to the third modification of the second embodiment includes a lower light emitting member 15, a lower reflection suppressing member 16, and a lower direction changing member 17.

[0191] The lower light emitting member 15 emits the light L and irradiates the light L to the peripheral portion of the lower surface of the substrate W. The lower direction changing member 17 changes the traveling direction of the light L emitted from the lower light emitting member 15 so that the traveling direction of the light L approaches the direction orthogonal to the first main surface of the substrate W (for example, the vertical direction). According to the second modification of the second embodiment. The lower reflection suppressing member 16 faces the lower surface of the substrate W and suppresses the reflection of the light L from the lower reflection suppressing member 16.

[0192] The lower light-emitting member 15 includes, for example, a lower light source 64 that emits light L and a lower housing 65 that houses the lower light source 64. The lower light-emitting member 15 is supported, for example, by the side wall 4b of the chamber 4. The lower light-emitting member 15 is disposed outside the chamber 4. The lower housing 65 is attached to the side wall 4b from the outside of the chamber 4.

[0193] As the lower light source 64, a light source having the same configuration as the light source 60 can be adopted. Therefore, a detailed description of the lower light source 64 is omitted. The light emitted from the lower light source 64 passes through the side wall 4b of the chamber 4 and the lower housing 65, and finally irradiates the peripheral portion of the upper surface of the substrate W held by the spin chuck 5 in the chamber 4. In the side wall 4b of the chamber 4 and the lower housing 65, the portion through which the light L passes is composed of a transmissive member having light transmissivity such as quartz.

[0194] A lower power supply unit 66 such as a power supply is connected to the lower light-emitting member 15, and the light L is emitted from the lower light-emitting member 15 by supplying power from the lower power supply unit 66.

[0195] The lower direction-changing member 17 includes, for example, a reflection mirror that reflects the light L. In relation to the lower direction-changing member 17, the processing unit 2 includes a lower rotation support shaft 82 that rotatably supports the lower direction-changing member 17 and a lower rotation support shaft drive mechanism 83 that rotates the lower direction-changing member 17 via the lower rotation support shaft 82. The lower rotation support shaft drive mechanism 83 includes an actuator such as an electric motor or an air cylinder.

[0196] As the lower reflection suppressing member 16, a reflection suppressing member having the same configuration as the reflection suppressing member 13 can be adopted. Therefore, a detailed description of the lower reflection suppressing member 16 is omitted. The lower reflection suppressing member 16 is disposed in the chamber 4 and may be fixed, for example, at a position facing the lower surface of the substrate W.

[0197] According to the third modification of the second embodiment, light L is irradiated to both the peripheral portion of the upper surface of the substrate W and the peripheral portion of the lower surface of the substrate W. For example, when the processing target film 102 extends to the peripheral portion of the lower surface of the substrate W, it is necessary to irradiate light L to the peripheral portions of both surfaces (upper surface and lower surface) of the substrate W. By adopting the configuration of the third modification of the second embodiment in such a case, the number of members required for irradiating the light L can be reduced.

[0198] FIG. 20 is a schematic diagram for explaining the configuration of the processing unit 2 according to the fourth modification of the second embodiment. FIG. 21 is a cross-sectional view taken along line XXI-XXI. FIG. 22 is a perspective view of the direction changing member 14 provided in the processing unit 2 according to the fourth modification of the second embodiment.

[0199] The direction changing member 14 provided in the processing unit 2 according to the fourth modification includes a support portion 91 having a recess 90 capable of accommodating the peripheral portion of the substrate W, and a reflecting portion 92 provided at the edge of the recess 90 for reflecting light.

[0200] The reflecting portion 92 faces both the upper surface and the lower surface of the substrate W in a state where the peripheral portion of the substrate W is accommodated in the recess 90. The light L emitted from the light emitting member 12 is irradiated to both the upper surface and the lower surface of the substrate W by the reflecting portion 92 reflecting the light L emitted from the light emitting member 12.

[0201] The direction changing member 14 is moved in a direction (horizontal direction) along the upper surface of the substrate W by a direction changing member driving mechanism 93. The direction changing member driving mechanism 93 can move the direction changing member 14 between a housing position (the position shown in FIG. 22) and a retracted position. The housing position is a position where the peripheral portion of the substrate W is accommodated in the recess 90 of the support portion 91. The retracted position is a position where the peripheral portion of the substrate W is detached from the recess 90. When the direction changing member 14 is located at the housing position, the direction changing member 14 is located between the pair of second portions 71 (see FIG. 21).

[0202] The direction-changing member driving mechanism 93 includes an arm 94 that supports the direction-changing member 14 and an arm driving mechanism 95 that moves the direction-changing member 14 in a direction (horizontal direction) along the upper surface of the substrate W. The arm driving mechanism 95 includes an actuator such as an electric motor or an air cylinder.

[0203] The direction-changing member 14 may be a rotary direction-changing member that rotates around a predetermined rotation axis, or may be a linear motion direction-changing member that linearly moves in the direction in which the corresponding arm extends. The direction-changing member 14 may be configured to be movable in the vertical direction as well.

[0204] According to the fourth modification of the second embodiment, the light L is irradiated to both the peripheral portion of the upper surface of the substrate W and the peripheral portion of the lower surface of the substrate W. Therefore, the processing target film 102 can be removed from both the peripheral portion of the upper surface of the substrate W and the peripheral portion of the lower surface of the substrate W. Further, the light L can be irradiated to the peripheral portions of both surfaces of the substrate W using a single light source 60 and a single direction-changing member 14. Therefore, when it is necessary to irradiate the light L to the peripheral portions of both surfaces of the substrate W, by adopting the configuration of the fourth modification of the second embodiment, the number of members required for irradiating the light L can be reduced.

[0205] <Other Embodiments> The present invention is not limited to the embodiments described above, and can be implemented in other forms.

[0206] (1) In each of the above-described embodiments, a plurality of processing liquids are configured to be discharged from a plurality of processing liquid nozzles. However, the mode of discharging the processing liquid is not limited to each of the above-described embodiments. For example, different from the above-described embodiments, the processing liquid may be discharged from a fixed nozzle whose position in the chamber 4 is fixed, or all the processing liquids may be configured to be discharged from a single nozzle.

[0207] (2) In each of the above embodiments, a continuous flow of the polymer-containing liquid is supplied onto the upper surface of the substrate W, and the polymer-containing liquid is spread by centrifugal force to form the polymer film 100. The method of supplying the polymer-containing liquid is not limited to the methods shown in FIGS. 6A and 6B. For example, a continuous flow of the polymer-containing liquid may be supplied onto the upper surface of the substrate W without changing the rotational speed of the substrate W. Further, while supplying the polymer-containing liquid onto the upper surface of the substrate W, the polymer-containing liquid nozzle 9 may be moved in a direction along the upper surface of the substrate W.

[0208] Furthermore, different from the above embodiments, the polymer film 100 may be formed on the upper surface of the substrate W by applying the polymer-containing liquid onto the upper surface of the substrate W. Specifically, the polymer film 100 may be formed by moving a bar-shaped coating member having the polymer-containing liquid adhering to its surface along the upper surface of the substrate W while bringing it into contact with the upper surface of the substrate W.

[0209] (3) In each of the above embodiments, the light L emitted from the light emitting member 12 is irradiated in a predetermined range in the rotational direction RD at the peripheral portion of the upper surface of the substrate W. However, the light L emitted from the light emitting member 12 may be irradiated onto the entire upper surface of the substrate W at once. In that case, in order to precisely control the etching width EW, it is preferable to use the reflection suppressing member 13 including the circular first portion 70 shown in FIGS. 13 and 14.

[0210] (4) In each of the above embodiments, the configuration in which the polymer film 100 is formed on the upper surface of the substrate W and the light L is irradiated to the peripheral portion of the upper surface of the substrate W has been described. However, the polymer film 100 may be formed on the lower surface of the substrate W and the light may be irradiated to the peripheral portion of the lower surface of the substrate W. In that case, the lower surface of the substrate W corresponds to the first main surface W1, and the upper surface of the substrate W corresponds to the second main surface W2.

[0211] (5) In each of the above embodiments, the rinsing step (step S5) is executed after the polymer film removing step (step S4). However, when a rinsing liquid is used as the removing liquid, the same kind of liquid is also supplied onto the upper surface of the substrate W in the rinsing step. Therefore, it is also possible to omit the rinsing step.

[0212] (6) A shutter (not shown) for blocking the light L emitted from the light source 60 and a shutter opening / closing mechanism (not shown) for opening and closing the shutter may be provided. The shutter moves between a closed position (blocking position) for blocking the light L emitted from the light source 60 and an open position (irradiation position) for emitting the light from the light source 60. The same applies to the lower light source 64.

[0213] (7) As shown by the two-dot chain line in FIG. 2, the light emitting member 12 may be disposed in the chamber 4. Further, the light source 60 may be disposed outside the chamber 4, and the tip of an optical fiber (not shown) for passing the light L emitted from the light source 60 may be disposed in the chamber 4. Although not shown, in the second embodiment as well, the light source 60 can be disposed in the chamber 4, or an optical fiber can be used. The same applies to the lower light emitting member 15.

[0214] (8) The position of the light emitting member 12 with respect to the upper wall 4a or the side wall 4b of the chamber 4 does not need to be fixed, and the light emitting member 12 may be configured to be movable with respect to the chamber 4. The same applies to the lower light emitting member 15.

[0215] (9) A condenser lens (not shown) for condensing the light L emitted from the light emitting member 12 in one direction may be provided between the light emitting member 12 and the peripheral edge portion of the first main surface of the substrate W. The irradiation area RA can be reduced by the condenser lens. Further, by using a polarizing plate (not shown) to narrow the width of the light L emitted from the light emitting member 12 passing through the polarizing plate, the size of the irradiation area RA can be adjusted.

[0216] (10) In each of the above-described embodiments, the controller 3 controls the entire substrate processing apparatus 1. However, the controllers for controlling the respective members of the substrate processing apparatus 1 may be distributed at a plurality of locations. Further, the controller 3 does not need to directly control each member, and the signal output from the controller 3 may be received by a slave controller that controls each member of the substrate processing apparatus 1.

[0217] (11) Different from each of the above embodiments, the substrate W does not necessarily have to be held in a horizontal posture by the spin chuck 5, and may be held in a vertical posture, or may be held in a posture in which the main surface of the substrate W is inclined with respect to the horizontal plane.

[0218] (12) Also, in the above embodiments, the substrate processing apparatuses 1 and 1A include a transfer robot (first transfer robot IR and second transfer robot CR), a plurality of processing units 2, and a controller 3. However, the substrate processing apparatuses 1 and 1A may be configured by a single processing unit 2 and a controller 3 and may not include a transfer robot. Alternatively, the substrate processing apparatuses 1 and 1A may be configured by only a single processing unit 2. In other words, the processing unit 2 may be an example of the substrate processing apparatus.

[0219] (13) In the above embodiments, expressions such as "along", "horizontal", "vertical", and "cylindrical" are used, but it is not necessary to be strictly "along", "horizontal", "vertical", or "cylindrical". That is, each of these expressions allows for deviations in manufacturing accuracy, installation accuracy, etc.

[0220] (14) Also, although each configuration may be schematically shown in blocks, the shape, size, and positional relationship of each block do not indicate the shape, size, and positional relationship of each configuration.

[0221] In addition, various changes can be made within the scope described in the claims.

Explanation of Reference Numerals

[0222] 1: Substrate processing apparatus 1A: Substrate processing apparatus 4: Chamber 4a: Upper wall (support wall) 9: Polymer-containing liquid nozzle (polymer film forming member) 12: Light emitting member 13: Reflection suppressing member 14: Direction-changing member 18: Spin base (substrate holding member) 20: Rotation drive mechanism (substrate rotation mechanism) 70: First part 70a: Opposing surface 70b: Orthogonal surface 70c: Inclined surface 71: Second part 90: Recess 91: Support part 92: Reflective part 100: Polymer film A1: Rotation axis A2: Central axis CP: Central part IA: Inner region L: Light PA: Peripheral region RA: Irradiation region RA1: First irradiation region RA2: Second irradiation region RD: Rotation direction W: Substrate W1: First main surface W2: Second main surface

Claims

1. A substrate processing apparatus for processing a substrate having a first main surface and a second main surface opposite to the first main surface, comprising: a substrate holding member for holding the substrate in a predetermined processing posture; a polymer film forming member for forming a polymer film containing a photoacid generator that generates an acid upon irradiation with light and a polymer on the first main surface of the substrate held by the substrate holding member; a light emitting member for emitting light and irradiating the peripheral portion of the first main surface of the substrate held by the substrate holding member with light; a reflection suppression member including a first portion that can be disposed at an adjacent position adjacent to the central portion side of the first main surface of the substrate in an irradiation region where the light from the light emitting member is irradiated at the peripheral portion of the first main surface of the substrate held by the substrate holding member, the reflection suppression member suppressing the reflection of light from the reflection suppression member.

2. further comprising a substrate rotation mechanism for rotating the substrate about a rotation axis passing through the central portion of the first main surface of the substrate held by the substrate holding member; The light emitting member emits light toward a predetermined range in the rotational direction about the rotation axis at the peripheral portion of the first main surface of the substrate held by the substrate holding member. The substrate processing apparatus according to claim 1.

3. The reflection suppression member is connected to the first portion, and further includes a second portion adjacent to the irradiation region from at least one of the rotational directions when the first portion is located at the adjacent position. The substrate processing apparatus according to claim 2.

4. The first portion has an annular or circular shape having a central axis, and the central axis is located on the rotation axis when the first portion is located at the adjacent position. The substrate processing apparatus according to claim 2 or 3.

5. The adjacent position is a shielding position where a part of the light emitted from the light emitting member is shielded by the first portion. The substrate processing apparatus according to any one of claims 1 to 4.

6. The first portion is a facing surface facing the first main surface of the substrate in a state parallel to the first main surface of the substrate when the first portion is located at the adjacent position; and an orthogonal surface connected to the facing surface and orthogonal to the facing surface. The substrate processing apparatus according to any one of claims 1 to 5.

7. The first portion is a facing surface facing the first main surface of the substrate in a state parallel to the first main surface of the substrate when the first portion is located at the adjacent position; The substrate processing apparatus according to any one of claims 1 to 5, further comprising an inclined surface that is connected to the opposing surface so as to form an acute angle with the opposing surface inside the first portion and is inclined with respect to the opposing surface.

8. The substrate processing apparatus according to any one of claims 1 to 7, further comprising a chamber that houses the substrate holding member, the chamber having a support wall that faces a first main surface of a substrate held by the substrate holding member and supports the light emitting member.

9. The substrate processing apparatus according to any one of claims 1 to 8, further comprising a direction changing member that changes a traveling direction of light so that the traveling direction of the light emitted from the light emitting member approaches a direction orthogonal to a first main surface of a substrate held by the substrate holding member.

10. The direction changing member includes a support portion having a recess capable of accommodating a peripheral portion of a substrate held by the substrate holding member, and a reflection portion provided at an edge of the recess and reflecting light emitted from the light emitting member, the reflection portion facing both a first main surface and a second main surface of the substrate in a state where the peripheral portion of the substrate held by the substrate holding member is accommodated in the recess. The substrate processing apparatus according to claim 9.

11. A substrate processing method for processing a substrate having a first main surface and a second main surface opposite to the first main surface, comprising a substrate holding step of holding the substrate in a predetermined processing posture, a polymer film forming step of forming a polymer film containing a photoacid generator that generates an acid by irradiation with light and a polymer on the first main surface of the substrate, and a light irradiation step of irradiating light onto a region on the first main surface of the substrate adjacent to the reflection suppressing member from a side opposite to the central portion of the first main surface of the substrate while a reflection suppressing member that suppresses light reflection faces a peripheral portion of the first main surface of the substrate. The substrate processing method.

12. The polymer film forming step according to claim 11, including a step of forming the polymer film in the peripheral region of the first main surface of the substrate without forming the polymer film in an inner region closer to the central portion than a peripheral region including the peripheral portion on the first main surface of the substrate.

13. further comprising a substrate rotation step of rotating the substrate around a rotation axis passing through the central portion of the substrate, wherein the light irradiation step includes a step of irradiating light in a predetermined range in a rotation direction around the rotation axis at a peripheral portion of the first main surface of the substrate. The substrate processing method according to claim 11 or 12.

14. In the light irradiation step, by disposing the reflection suppression member at a shielding position that blocks a part of the light emitted from the light emitting member, an irradiation area adjustment step of adjusting the size of the irradiation area irradiated with light on the first main surface of the substrate is further included. The substrate processing method according to any one of claims 11 to 13.

15. The polymer film forming step and the light irradiation step are alternately executed a plurality of times. The plurality of light irradiation steps include a first light irradiation step of emitting light toward the peripheral edge of the first main surface of the substrate, and a second light irradiation step that is executed after the first light irradiation step and emits light toward the peripheral edge of the first main surface of the substrate. The irradiation area adjustment step includes a step of moving the reflection suppression member so that a first irradiation area irradiated with light on the first main surface of the substrate in the first light irradiation step reaches closer to the center of the first main surface of the substrate than a second irradiation area irradiated with light on the first main surface of the substrate in the second light irradiation step. The substrate processing method according to claim 14.

Images