Substrate processing apparatus, substrate processing method, and storage medium

Abstract

To uniformize sensitivity in exposure processing in a substrate using a resist material suitable for EUV lithography in a plane.SOLUTION: A substrate processing device includes a substrate support part, a light source, a measuring part having an illuminometer, a shielding part configured so as to be shiftable between a first state of always shielding a part of irradiation light made to irradiate the center of rotation and a second state that is a state other than the first state, and a control part, wherein the control part is configured so as to execute first control of controlling the light source so as to irradiate only a partial region with irradiation light, in the state where the shielding part is in the second state, second control of determining whether or not an exposure amount in the center of rotation exceeds a predetermined threshold on the basis of illuminance of irradiation light measured by the illuminator, third control of shifting the shielding part to the first state when the exposure amount in the center of rotation is determined to exceed the threshold, and fourth control of controlling the light source so as to continue irradiation of the substrate with the irradiation light.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

Background Art

[0002] Patent Document 1 discloses an auxiliary exposure apparatus that irradiates a resist film formed on a substrate with ultraviolet light separately from an exposure process to improve the film pressure, line width accuracy, or in-plane uniformity of a resist pattern.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of making the sensitivity uniform in-plane during exposure processing of a substrate using a resist material suitable for EUV lithography.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes: a substrate support unit configured to be able to support a substrate with a resist film formed of a resist material for EUV lithography while rotating the substrate; a light source that irradiates irradiation light including vacuum ultraviolet light; a shutter that switches between a state where the irradiation light reaches the substrate and a state where it does not reach the substrate by moving between the optical path of the irradiation light and an area outside the optical path; a light-transmitting plate that transmits the irradiation light; a light-shielding plate that restricts the irradiation range of the irradiation light reaching the substrate by allowing the irradiation light to pass through only the opening portion; and a shielding unit that can be disposed at a position that blocks the irradiation light irradiated to the rotation center of the substrate supported by the substrate support unit and rotating, and the irradiation light is irradiated to a part of the surface of the substrate in a region that is continuous in the radial direction.

Effects of the Invention

[0006] According to the present disclosure, a technique is provided that can make the sensitivity uniform in-plane during an exposure process on a substrate using a resist material suitable for EUV lithography.

Brief Description of the Drawings

[0007]

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Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same reference numerals are given to the same elements or elements having the same function, and redundant descriptions are omitted.

[0009] [Configuration of Substrate Processing Apparatus] FIG. 1 is a schematic diagram (longitudinal side view) showing a first configuration example of the substrate processing apparatus according to the present embodiment. The substrate processing apparatus 1 shown in FIG. 1 irradiates the workpiece W with light for processing. For example, the substrate processing apparatus 1 is configured to irradiate light including vacuum ultraviolet light (VUV light: Vacuum Ultra Violet Light) onto a resist film or a resist pattern formed on the surface of the workpiece W. By irradiating the light including vacuum ultraviolet light by the substrate processing apparatus 1, the sensitivity of these resist films during exposure can be improved. Further, by irradiating the light including vacuum ultraviolet light, the surface roughness of the resist pattern obtained by the exposure and development processes can also be improved.

[0010] The workpiece W to be processed is, for example, a substrate, or a substrate in a state where a film, a circuit, etc. are formed by performing a predetermined process. The substrate included in the workpiece W is, as an example, a wafer containing silicon. The workpiece W (substrate) generally has a disc shape as an example, but a part of the circle may be cut out, or it may have a shape other than a circle such as a polygon. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or an intermediate obtained by performing a predetermined process on these substrates, etc.

[0011] The substrate processing apparatus 1 has a function of irradiating the surface of the workpiece W with the processing irradiation light L1. As an example, after forming a resist film on a SOC film (Silicon-on-Carbon) on a substrate and a SOG film (Silicon-on-Glass) on the SOC film, an exposure and development process is performed to form a resist pattern with a predetermined pattern. The resist pattern is a mask pattern for etching the underlying SOC film and SOG film to form a pattern on these underlying films. The substrate processing apparatus 1 has a function of improving the roughness of the surface of the resist pattern, for example, by irradiating the surface of the workpiece W on which the resist pattern is formed with the processing irradiation light L1. In the present embodiment, the case where the workpiece W before the exposure and development process is irradiated with the processing irradiation light L1 by the substrate processing apparatus 1 after the resist film is formed will be described.

[0012] In addition, in the substrate processing apparatus 1 according to the present embodiment, the case where the resist material used for forming the resist pattern is a material suitable for EUV lithography using an EUV laser as an exposure light source will be described. Note that the EUV laser (Extreme Ultraviolet) is a laser with a wavelength of 13.5 nm. The workpiece W on which the resist film is formed by the resist material is irradiated with light including the above-mentioned VUV light under predetermined conditions using the substrate processing apparatus 1. As a result, the sensitivity in the subsequent exposure process is improved. Furthermore, the roughness of the surface of the resist when the resist pattern is formed by the exposure and development process is improved. Also, the roughness of the surface of the pattern obtained as a result of etching using this resist pattern as a mask can be improved.

[0013] Each part of the substrate processing apparatus 1 will be described. As shown in FIG. 1, the substrate processing apparatus 1 includes a processing chamber 20, a light irradiation mechanism 40 (light source), a light quantity adjustment mechanism 50, a measurement unit 60, and a controller 100 (control unit).

[0014] The processing chamber 20 includes a housing 21, a transfer port 22, a rotation support portion 25 (substrate support portion), a gas supply portion 30, a gas discharge portion 32, and an atmosphere adjustment portion 34. The housing 21 is, for example, a part of a vacuum container provided in the atmospheric atmosphere, and is configured to be able to accommodate a workpiece W conveyed by a transfer mechanism (not shown). That is, the housing 21 functions as a processing container that performs processing related to the workpiece W inside.

[0015] In the substrate processing apparatus 1, processing on the workpiece W is performed in a state where the workpiece W is accommodated in the housing 21. A transfer port 22 is formed in the side wall of the housing 21. The transfer port 22 is an opening for loading and unloading the workpiece W with respect to the housing 21. The transfer port 22 is opened and closed by a gate valve 23.

[0016] The rotation support portion 25 is configured to be able to support the workpiece W while rotating it based on an instruction from the controller 100 in the housing 21. The rotation support portion 25 has, for example, a holding portion 26 and a rotation driving portion 27. The holding portion 26 supports the central portion of the workpiece W horizontally with the surface on which the resist pattern is formed facing upward, and holds the workpiece W by, for example, vacuum adsorption (holding by the differential pressure with the pressure in the chamber). Thereby, the workpiece W can be rotated at high speed. The rotation driving portion 27 has a function of rotating the holding portion 26 holding the workpiece W around a vertical axis together with the workpiece W. The rotation driving portion 27 is, for example, a rotation actuator having an electric motor as a power source. The rotation axis of the rotation driving portion 27 is provided at the rotation center A1 of the workpiece W.

[0017] The gas supply portion 30 is configured to supply an inert gas (for example, argon, nitrogen, etc.) into the housing 21 through a through hole 21a formed in the housing 21. The gas supply portion 30 includes a gas source 30a, a valve 30b, and a pipe 30c. The gas source 30a stores an inert gas and functions as a supply source of the inert gas. The valve 30b operates based on an operation signal from the controller 100 to open and close the pipe 30c. The pipe 30c connects the gas source 30a, the valve 30b, and the through hole 21a in order from the upstream side.

[0018] The gas discharge part 32 discharges the gas from the housing 21 through the through hole 21b formed in the housing 21. The gas discharge part 32 has a vacuum pump 32a and a pipe 32c. The vacuum pump 32a discharges the gas from inside the housing 21. The pipe 32c connects the through hole 21b and the vacuum pump 32a.

[0019] The atmosphere adjustment part 34 can adjust the inside of the housing 21 to the atmospheric atmosphere through the through hole 21c formed in the housing 21. The atmosphere adjustment part 34 has a valve 34b and a pipe 34c. The valve 34b operates based on the operation signal from the controller 100 and opens and closes the pipe 34c. The pipe 34c can connect the through hole 21c to the atmospheric atmosphere. That is, when the valve 34b is opened, the inside of the housing 21 is adjusted to the atmospheric atmosphere.

[0020] The light irradiation mechanism 40 has a light source part 42 that irradiates irradiation light including vacuum ultraviolet light. The light source part 42 may be housed in a housing (not shown) provided on the upper part of the housing 21. Also, the light source part 42 may be switched on and off by a switch (not shown) controlled by, for example, the controller 100. In the substrate processing apparatus 1, on the premise that the work W is rotated by the rotation support part 25, the irradiation position of the light source part 42 is configured to be divided into parts instead of the entire work W. Specifically, the optical axis center A2 of the light source part 42 is offset outward along the radial direction of the work W with respect to the rotation center A1 of the work W. In the example shown in FIG. 1, the irradiation light L1 from the light source part 42 irradiates near the center of the work W, and the optical axis center A2 is offset to such an extent that one end part (the right end part in FIG. 1) of the work W can be irradiated. In this case, since the irradiation light L1 from the light source part 42 is not irradiated to the entire surface of the work W, the distance between the light source part 42 and the work W can be made closer.

[0021] The lamp in the light source unit 42 irradiates light including light in a wavelength range of, for example, 115 nm to 400 nm. The lamp is, for example, constantly lit for the stability of the light source. As an example, the light source unit 42 irradiates light having a continuous spectrum in the range of 115 nm to 400 nm. The "light having a continuous spectrum" may include light containing at least a part (for example, a wavelength width of 10 nm or more) of continuous spectral components in a wavelength range of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet light (VUV light)).

[0022] Note that the continuous spectrum refers to a spectrum that continuously spreads in a specific wavelength range (in this embodiment, a wavelength width of 10 nm or more), and is a spectrum distinguished from a line spectrum (emission line spectrum) at a specific wavelength. As the light having a continuous spectrum including a part of the wavelength range of 100 nm to 200 nm, the light having a continuous spectrum in the wavelength range of 115 nm to 400 nm described above may be used. Note that the light emitted from the light source unit 42 does not necessarily have to be "light having a continuous spectrum" in all of the wavelength range, but is light having a continuous spectrum in at least a part of the range. As an example, the light emitted from the light source unit 42 forms a continuous spectrum in a wavelength range overlapping with the wavelength range of 100 nm to 200 nm (corresponding to the wavelength range of vacuum ultraviolet light (VUV light)), so that the action of the light irradiated from the light source unit 42 described later can be effectively exhibited.

[0023] Vacuum ultraviolet light (VUV light) is generally light in the range of 10 nm to 200 nm. However, the light emitted from the light source unit 42 can enhance the effect of the treatment by the substrate processing apparatus 1, that is, the effect of modifying the resist film, more when using light on the longer wavelength side of 100 nm or more among the VUV light. Since light on the shorter wavelength side (light having a wavelength shorter than 100 nm) hardly enters the inside of the resist film, the effect of modifying the entire resist film may hardly be exhibited.

[0024] Note that the main wavelength range of the light emitted from the light source unit 42 may be different from, for example, the wavelength of the light used for exposure of the resist film. The wavelength of the light used for exposure is, for example, an EUV laser (Extreme Ultraviolet), which is a laser with a wavelength of 13.5 nm. If light with a wavelength used for exposure of the resist film, that is, EUV light, is used in the substrate processing apparatus 1, there is a possibility that the exposure process for the workpiece W may proceed at the timing of the process by the substrate processing apparatus 1. Therefore, by setting the main wavelength range of the light emitted from the light source unit 42 to 100 nm or more, it is considered that an effect of light with a wavelength different from that of exposure by EUV light can be obtained.

[0025] In addition to VUV light, the light emitted from the light source unit 42 may also include near-ultraviolet light (near-ultraviolet rays) having a wavelength longer than that of VUV light. Also, as an example, the light from the light source unit 42 can be configured to include light in a wavelength band of 160 nm or less. Thus, the light emitted from the light source unit 42 includes at least light in a wavelength range defined as VUV light.

[0026] The lamp provided in the light source unit 42 may be, for example, a deuterium lamp and may be configured to irradiate VUV light having a wavelength of 200 nm or less. The wavelength of the peak of the continuous spectrum may be, for example, 160 nm or less, or may be 150 nm or more. Also, the light from the light source unit 42 has a peak wavelength of 248 nm or less in the spectral spectrum, so that the effect of the light in the wavelength range of VUV light contained in the light from the light source unit 42 is enhanced. The light from the light source unit 42 may be light forming a continuous spectrum having a plurality of sub-peaks. The sub-peaks may be at 248 nm or less, or may be, for example, at 160 nm or less. Note that the light from the light source unit 42 is not limited to a continuous spectrum and includes, for example, light of one or more wavelengths in the wavelength range of 115 nm to 400 nm.

[0027] Since the wavelength range of the spectrum of the light irradiated from the light source unit 42 is relatively wide, the resist film on the work W receives the energy of light of various wavelengths. As a result, various reactions occur on the surface of the resist film. Specifically, the chemical bonds at various positions in the molecules constituting the resist film are broken, thereby increasing the sensitivity of the resist film to exposure. Therefore, even with a smaller exposure amount, the exposure can be appropriately performed. In addition, since various compounds are generated by the cleavage of the above-described chemical bonds, the orientation of the molecules present in the resist film before light irradiation is eliminated. As a result, the surface free energy and the internal stress in the resist film decrease. That is, by using the light source unit 42 as the light source, the fluidity of the surface of the resist film tends to increase, and as a result, the effect of improving the roughness of the surface when forming the resist pattern can be enhanced.

[0028] In addition, when irradiating the resist film on the work W with light including VUV light from the light source unit 42, if there is a bias in the energy of the light received by the resist film on the work W, there may be a bias in the characteristics of the resist on the surface of the work W irradiated with the VUV light. Therefore, it is required that the light including the VUV light be irradiated as evenly as possible over the entire surface of the work W. Further, when attempting to adjust the characteristics of the resist film on the surface of the work W by irradiating the light from the light source unit 42, the irradiation amount of the light may be important. Therefore, in the substrate processing apparatus 1, the light amount adjustment mechanism 50 is used to adjust the light amount.

[0029] As described above, the light amount adjustment mechanism 50 has a function of adjusting the light amount of the irradiation light L1 on the optical path of the irradiation light L1 irradiated from the light source unit 42. In the example shown in FIG. 1, the light amount adjustment mechanism 50 includes a lamp shutter 51, a rotation center shutter 52 (shielding portion), a light transmissive plate 53, and a light shielding plate 54.

[0030] The lamp shutter 51 has a function of switching between a state where the irradiation light L1 from the light source unit 42 reaches the workpiece W and a state where it does not reach. The lamp shutter 51 has, for example, a shielding plate 51a (shutter) that can be disposed on the optical path of the irradiation light L1, and a support portion 51b that supports the shielding plate 51a so as to be movable (openable and closable). The shielding plate 51a is sized to be able to block all of the irradiation light L1 from the light source unit 42. Further, the support portion 51b supports the shielding plate 51a so as to be movable between the optical path and a region outside the optical path, for example, in a state where the shielding plate 51a is orthogonal to the optical axis of the irradiation light L1. By moving the shielding plate 51a by the support portion 51b, it is possible to switch between a state where the irradiation light L1 from the light source unit 42 reaches the workpiece W and a state where it does not reach. That is, the shielding plate 51a switches between a state where the irradiation light L1 reaches the workpiece W and a state where it does not reach by moving between the optical path of the irradiation light L1 and a region outside the optical path. The movement of the shielding plate 51a is controlled by, for example, the controller 100. Note that FIG. 1 shows a state where the shielding plate 51a is disposed on the optical path.

[0031] The translucent plate 53 is provided below the lamp shutter 51 (on the side separated from the light source unit 42) and also has a function as a so-called partition wall that transmits the irradiation light L1. That is, the translucent plate 53 is disposed so as to partition the space inside the housing 21 into a light source unit 42 side and a workpiece W side. Thereby, the space below the translucent plate 53 becomes a closed space independent of the upper space. When the gas supply unit 30, the gas discharge unit 32, and the atmosphere adjustment unit 34 are disposed below the translucent plate 53, the atmosphere in the space where the workpiece W exists below the translucent plate 53 can be appropriately adjusted. The translucent plate 53 may be, for example, glass (for example, magnesium fluoride glass). Note that it is not necessary for the entire translucent plate 53 to be substantially 100% transmissive of the irradiation light L1, and it is sufficient if at least the optical path of the irradiation light L1 is transmissive of the irradiation light L1.

[0032] The rotation center shutter 52 is a shielding part configured to be able to transition between a first state in which it always blocks a portion of the irradiation light L1 irradiated to the rotation center A1 of the workpiece W that rotates while being supported by the holding part 26 of the rotation support part 25, and a second state which is a state other than the first state. The rotation center shutter 52 has, for example, a lid part 52a configured to be arranged so as to cover the rotation center A1 of the workpiece W, and a support part 52b that movably (openably and closably) supports the lid part 52a. Here, "arranged so as to cover the rotation center A1 of the workpiece W" means that it is arranged so as to overlap the rotation center A1 in a plan view and completely blocks the portion of the irradiation light irradiated to the rotation center A1 of the workpiece W. The support part 52b supports the lid part 52a so as to be movable, for example, between a position where the lid part 52a blocks the irradiation light L1 irradiated to the rotation center A1 (the position in the first state) and a position where it does not block (the position in the second state), with the lid part 52a being orthogonal to the optical axis of the irradiation light L1. By moving the lid part 52a by the support part 52b, the first state and the second state can be switched. The movement of the lid part 52a is controlled, for example, by the controller 100. Note that in FIG. 1, a state where the lid part 52a is arranged so as to cover the rotation center A1 of the workpiece W is shown.

[0033] The light shielding plate 54 has a function as a light shielding member that adjusts the irradiation range of the irradiation light L1 irradiated from the light source part 42 (the reach range of the irradiation light L1 on the surface of the workpiece W). The light shielding plate 54 includes an opening part 54a that allows the irradiation light L1 to pass through. The light shielding plate 54 restricts (adjusts) the irradiation range of the irradiation light L1 reaching the workpiece W by allowing only the opening part 54a to pass the irradiation light L1.

[0034] Regarding the details of the shape of the light shielding plate 54, reference is made to FIGS. 2 and 3 for description. FIG. 2(a) schematically shows the irradiation region AR of the irradiation light L1 on the workpiece W when the light shielding plate 54 is not used. As described above, the irradiation light L1 is irradiated near the center of the workpiece W while being irradiated to one end of the workpiece W (the right end in FIG. 2(a)). Here, as shown by the shading of colors in the irradiation region of FIG. 2(a), the irradiation light L1 gradually decreases in illuminance as it goes outward from the central region CA which is the center of the optical axis, and further, the illuminance increases again in the outer peripheral region OA. When the region with high illuminance in such an outer peripheral region OA overlaps with the outer peripheral portion of the workpiece W, there is a possibility that the exposure amount of only the outer peripheral portion of the workpiece W becomes excessive. In order to avoid such a situation, the irradiation region AR is set (the irradiation region AR is shifted outward) so that the outer peripheral region OA and the outer peripheral portion of the workpiece W do not overlap.

[0035] In FIG. 1, from the light source unit 42 toward the workpiece W, the shielding plate 51a, the light-transmitting plate 53, the lid portion 52a of the rotary center shutter 52, and the opening portion 54a of the light shielding plate 54 are arranged in this order. In this way, the shielding plate 51a is located closer to the light source unit 42, while the lid portion 52a is located closer to the workpiece W. Thereby, the shielding plate 51a can shield a relatively small area against the light that is not much diffused, and also, the switching operation between shielding and opening (the second state) can be performed in a relatively small space. On the other hand, since the lid portion 52a is close to the workpiece W, the boundary of the irradiation range of the workpiece W is less likely to be blurred by the diffusion of light, that is, the irradiation range of the central region of the workpiece W can be set accurately.

[0036] Further, the light-transmitting plate 53 is located closer to the light source unit 42, while the opening portion 54a is located closer to the work W. At this time, since the light-transmitting plate 53 can transmit light before the light is overly diffused and the difference in the intensity distribution between the inner and outer sides of the light is small, when the light is attenuated to a certain extent by transmission, it is possible to attenuate the overall light while keeping the bias of the intensity distribution between the inner and outer sides of the light small. Note that the point where the intensity distribution between the inner and outer sides of the light occurs at least can be understood by referring to FIG. 2 described later. On the other hand, since the opening portion 54a determines the overall boundary of the irradiation region on the work W, because it is located close to the work W, it is possible to accurately define the overall irradiation region with little influence of light diffusion.

[0037] The light-transmitting plate 53 is provided in a portion that partitions the space including the work W below it and the space including the light source unit 42 above it. For this reason, since the shielding plate 51a is provided closer to the light source unit 42 than the light-transmitting plate 53, the connection portion between the support portion 51b that switches between shielding and opening and the shielding plate 51a is located in a partitioned position from the space on the work W side, and the airtightness of the space on the work W side is easily maintained.

[0038] FIG. 2(b) schematically shows the shape of the opening portion 54a of the light shielding plate 54. When the irradiation light L1 is irradiated from the light source unit 42 while rotating the work W at a predetermined rotational speed (angular velocity) by the rotary support portion 25, the peripheral speed is higher at the periphery than near the center of the work W. Considering this point, as shown in FIG. 2(b), the shape of the opening portion 54a of the light shielding plate 54 is set so that the irradiation region extends from the center to the periphery of the work W. The opening portion 54a has a substantially fan shape and is defined by two radii 54x, 54x extending toward the periphery (one end) of the work W with the rotation center of the work W as the center and an arc 54y connecting the endpoints of the radius 54x.

[0039] Here, as described above, since the irradiation region AR is shifted outward so that the outer peripheral region OA of the irradiation light L1 does not overlap with the outer peripheral portion of the workpiece W, there is a possibility that the outer peripheral region OA of the irradiation light L1 overlaps with the rotation center of the workpiece W (see Fig. 2(b)). In this case, there is a possibility that the exposure amount at the rotation center becomes excessive. Although the exposure amount at the rotation center is adjusted by the opening and closing operation of the rotation center shutter 52 (details will be described later), it is preferable that the exposure amount be made as uniform as possible regardless of the opening and closing operation of the rotation center shutter 52.

[0040] Therefore, in the light shielding plate 54 of the substrate processing apparatus 1 according to the present embodiment, the two radii 54x, 54x are not the radii of the straight lines with respect to the arc 54y (the radii indicated by the dashed-dotted lines in Fig. 2(b)), but are shaped to be recessed inward in the circumferential direction. Such a shape recessed inward is formed at least in a portion close to the rotation center at the radii 54x, 54x. In this way, by making at least the portion close to the rotation center at the radii 54x, 54x be shaped to be recessed inward, the amount of the irradiation light passing through the light shielding plate 54 in the region close to the rotation center can be reduced. Thereby, it is possible to effectively suppress the exposure amount at the rotation center from becoming excessive.

[0041] Fig. 3 is a diagram for explaining the opening portion 54a of the light shielding plate 54. Now, when the illuminance E of the irradiation light L1 is not uniform and the illuminance E is determined according to the position, the shape of the opening portion 54a (the shape including the recessed shape of the above-described radii 54x, 54x) is adjusted so that the integral of the illuminance E along the circumferential path C is proportional to the radius r.

[0042] The irradiation light L1 emitted from the light source unit 42 passes through the light amount adjustment mechanism 50, and as a result, the light amount is suppressed and becomes weak light. In the present embodiment, "weak light" is light such that when the workpiece W is irradiated with light, the change in the temperature of the workpiece W is suppressed to less than 1°C with respect to the external temperature (the temperature outside the housing 21, room temperature). Further, the irradiation light L1 after passing through the light amount adjustment mechanism 50 can be adjusted to weak light over the entire irradiation region AR of the irradiation light L1 on the surface of the workpiece W.

[0043] Returning to FIG. 1, the measurement unit 60 includes two illuminance meters 61 and 62 (first illuminance meter, second illuminance meter) that measure the illuminance of the irradiation light L1. The illuminance meter 61 is provided at a position corresponding to the optical axis center A2 of the irradiation light L1 irradiated onto the workpiece W that is supported and rotated by the rotation support unit 25, specifically, directly below the optical axis center A2. According to such an illuminance meter 61, the illuminance at the optical axis center A2 of the irradiation light L1 can be measured, and for example, the degradation status of the lamp itself of the light source unit 42 can be appropriately specified.

[0044] As shown in FIG. 4, the illuminance meter 62 is provided on the circumference of a circle Ci (circle Ci indicated by a dashed line) centered on the optical axis center A2 and passing through the rotation center A1. That is, the illuminance meter 62 is provided at any position where the distance from the optical axis center A2 is the same as that of the rotation center A1. In the example shown in FIG. 4, the illuminance meter 62 is provided at a position symmetric to the rotation center A1 with respect to the optical axis center A2. Although details will be described later, regarding the rotation center A1, the exposure amount tends to be excessive, so the exposure amount is adjusted by the opening and closing operation of the rotation center shutter 52. In such adjustment of the exposure amount, it is important to appropriately obtain the exposure amount (real-time exposure amount) at the rotation center A1 of the workpiece W. However, since the θ-axis of the rotation drive unit 27 is provided at the rotation center A1 of the workpiece W (see FIG. 1), it is difficult to provide the illuminance meter 62. Here, the irradiation light L1 generally has the highest illuminance at the optical axis center A2, and the illuminance changes according to the distance from the optical axis center A2. Therefore, by providing the illuminance meter 62 on the circumference of the circle Ci centered on the optical axis center A2 and passing through the rotation center A1, it becomes possible to appropriately estimate the exposure amount at the rotation center A1 by the illuminance meter 62 provided in a region having an illuminance similar to that at the rotation center A1.

[0045] The controller 100 controls the rotation support unit 25, the gas supply unit 30, the gas discharge unit 32, the atmosphere adjustment unit 34, the light irradiation mechanism 40, and the light amount adjustment mechanism 50.

[0046] The controller 100 is composed of one or more control computers. For example, the controller 100 has a circuit 120 shown in FIG. 5. The circuit 120 has one or more processors 121, a memory 122, a storage 123, and an input / output port 124. The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the substrate processing apparatus 1 to execute the substrate processing procedure described later. The storage medium may be a non-volatile semiconductor memory, a removable medium such as a magnetic disk and an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation result by the processor 121. The processor 121 executes the above program in cooperation with the memory 122 to constitute each of the above-described function modules. The input / output port 124 inputs and outputs electrical signals between the controller 100 and each unit to be controlled according to a command from the processor 121.

[0047] Note that the hardware configuration of the controller 100 is not necessarily limited to one that constitutes each function module by a program. For example, each function module of the controller 100 may be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the same.

[0048] The controller 100 is configured to execute first control, second control, third control, and fourth control. The second control is implemented during the first control. The third control is implemented after the second control. The fourth control is implemented after the third control.

[0049] In the first control, with the rotary center shutter 52 in the second state, the controller 100 controls the light irradiation mechanism 40 so that the irradiation light L1 is irradiated onto the workpiece W that is supported by the holding portion 26 of the rotary support portion 25 and rotates. Specifically, the controller 100 controls the light irradiation mechanism 40 so that the irradiation light L1 is irradiated only on a partial region including the rotation center A1 of the workpiece W and the peripheral edge (one end portion) of the workpiece W. Controlling the light irradiation mechanism 40 here means, for example, adjusting the direction of the light source unit 42 so that the irradiation region of the irradiation light L1 becomes the intended region. The state where the rotary center shutter 52 is in the second state is, as described above, a state where the lid portion 52a is disposed at a position that does not block the portion of the irradiation light L1 irradiated to the rotation center A1 of the workpiece W. That is, in the first control, the controller 100 controls the support portion 52b so that the lid portion 52a is disposed at a position that does not block the irradiation light L1 irradiated to the rotation center A1 of the workpiece W.

[0050] In the second control, the controller 100 determines whether or not the exposure amount at the rotation center A1 exceeds a threshold value based on the illuminance of the irradiation light L1 measured by the illuminance meter 62 during the first control. As described above, the illuminance meter 62 is provided on the circumference of a circle Ci passing through the rotation center A1 with the optical axis center A2 as the center, and can measure an exposure amount approximating the exposure amount at the rotation center A1. FIG. 6 is a graph showing an example of the dose amount (exposure amount) for each region in the workpiece W when the workpiece W is irradiated with the irradiation light L1 by the first control. In FIG. 6, the horizontal axis indicates the position in the radial direction of the workpiece W, and the vertical axis indicates the dose amount. In the first control described above, for regions other than the rotation center A1 of the workpiece W, the region where the irradiation light L1 is continuously irradiated changes according to the rotation of the workpiece W, but the irradiation light L1 is always irradiated to the rotation center A1 of the workpiece W. As a result, as shown in FIG. 6, only the rotation center A1 of the workpiece W has excessive exposure, and as a result, there is a possibility that the sensitivity of the workpiece W becomes non-uniform in the plane during the exposure process performed after the vacuum ultraviolet light irradiation. To avoid such a situation, the controller 100 determines whether or not the exposure amount at the rotation center A1 exceeds the threshold value in the second control, and if it exceeds, performs the third control described later to prevent excessive exposure only at the rotation center A1 of the workpiece W. Such a threshold value of the exposure amount is at least a value that does not cause "excessive exposure at the rotation center A1".

[0051] In the third control, when it is determined in the second control that the exposure amount at the rotation center A1 exceeds the threshold value, the controller 100 transitions the rotation center shutter 52 to the first state. The state where the rotation center shutter 52 is in the first state is, as described above, a state in which the lid portion 52a is arranged at a position that always blocks the portion of the irradiation light L1 irradiated to the rotation center A1 of the workpiece W (the state shown in FIG. 1). That is, in the third control, the controller 100 controls the support portion 52b so that the lid portion 52a is arranged at a position that blocks the irradiation light L1 irradiated to the rotation center A1 of the workpiece W.

[0052] FIG. 7 is a diagram for explaining the operation of the lid portion 52a. Note that the irradiation region AR of the irradiation light L1 shown in FIG. 7 shows an example in which the portion around the rotation center A1 is circular due to the mask shape of the light shielding plate 54. During the first control, as shown in FIG. 7(a), the lid portion 52a is disposed at a position that does not block the portion of the irradiation light L1 irradiated to the rotation center A1. On the other hand, when it is determined in the second control that the exposure amount at the rotation center A1 exceeds the threshold value, in the third control, as shown in FIG. 7(b), the lid portion 52a is moved to a position that always blocks the portion of the irradiation light L1 irradiated to the rotation center A1.

[0053] Then, in the fourth control, the controller 100 controls the light source unit 42 of the light irradiation mechanism 40 so that the irradiation of the irradiation light L1 on the work W continues with the lid portion 52a of the rotation center shutter 52 in the first state (see FIG. 7(b)).

[0054] [Substrate Processing Method] Next, a substrate processing method including the operation in the substrate processing apparatus will be described. The substrate processing method shown in the present embodiment irradiates light including VUV light to the work W on which the resist film is formed before exposure using the substrate processing apparatus 1.

[0055] FIG. 8 shows, as a flowchart, the procedure for forming a resist pattern on the work W.

[0056] In step S01, a resist solution is applied to the surface of the work W to form a resist film. The method for forming the resist film is not particularly limited. A lower layer film or the like may be formed on the surface of the work W before forming the resist film. At this stage, the resist film is formed over the entire surface of the work W.

[0057] In step S02, light including VUV light is irradiated onto the surface of the work W on which the resist film is formed using the substrate processing apparatus 1. The irradiated light L1 from the light source unit 42 is irradiated onto the work W held in the housing 21 as VUV light. The irradiated light L1 is light including VUV light. Hereinafter, the operation of the substrate processing apparatus 1 in step S02 will be described with reference to FIG. 9.

[0058] FIG. 9 is a diagram for explaining the operation sequence related to the irradiation of VUV light. First, by the operation of the gas discharge unit 32, evacuation is performed to lower the pressure inside the housing 21 (see FIG. 9(a)). Then, with the operations of the gas supply unit 30 and the gas discharge unit 32 stopped, the work W is carried into the housing 21 by the transfer mechanism, and the work W is placed on the holding portion 26 of the rotation support portion 25 (see FIG. 9(b)). Thereafter, the valve 30b of the gas supply unit 30 is opened to perform N2 purge inside the housing 21.

[0059] Subsequently, when the N2 purge is stopped and the gate valve 23 is closed, the inside of the housing 21 is made airtight (see FIG. 9(c)). At this time, the inside of the housing 21 is set to, for example, an atmospheric atmosphere of standard atmospheric pressure. Thereafter, by the operation of the gas discharge unit 32, chamber rough evacuation is performed for about 30 seconds to lower the pressure inside the housing 21 (see FIG. 9(d)).

[0060] Thereafter, chamber main evacuation is performed for about 5 seconds, the pressure reduction progresses, and the pressure inside the housing 21 is lowered to about 0.02 Pa (see FIG. 9(e)). And the state where the pressure is lowered is continued for about 30 seconds (see FIG. 9(f)).

[0061] Then, the valve 30b of the gas supply unit 30 is opened to supply Ar gas into the housing 21 (see FIG. 9(g)). Thereby, an Ar gas atmosphere is formed inside the housing 21 and the pressure inside the housing 21 rises. Note that the pressure reduction rate and the pressure increase rate can be controlled by the operations of the gas supply unit 30 and the gas discharge unit 32. Also, the pressure reduction rate and the pressure increase rate may be constant or may vary midway.

[0062] When the pressure inside the housing 21 reaches 10,000 Pa by Ar gas, for example, with the pressure inside the housing 21 maintained, the lamp shutter 51 is set to the open state (a state where the irradiation light L1 from the light source unit 42 reaches the workpiece W) (see Fig. 9(h)).

[0063] Then, with the workpiece W rotated by the rotary support portion 25, light including VUV light is irradiated from the light source unit 42 to the workpiece W for about 31 seconds, for example (see Fig. 9(i)). If it is determined that the exposure amount at the rotation center A1 exceeds the threshold value during the process, the lid portion 52a is moved to a position where it blocks the irradiation light L1 irradiated to the rotation center A1 of the workpiece W.

[0064] When irradiation light is irradiated from the light source unit 42 for a predetermined time (for example, about 31 seconds), the light irradiation is stopped, and the lamp shutter 51 is set to the closed state (a state where the irradiation light L1 from the light source unit 42 does not reach the workpiece W) (see Fig. 9(j)). Then, the operations of the gas supply unit 30 and the gas discharge unit 32 are stopped. After that, the valve 30b of the gas supply unit 30 is opened, and N2 purge is performed inside the housing 21, and the pressure inside the housing 21 is returned to the atmospheric atmosphere (see Fig. 9(k)). Finally, the workpiece W is carried out of the housing 21 (see Fig. 9(l)). Thus, the processing of the workpiece W by the substrate processing apparatus 1 is completed.

[0065] The amount of light per unit area during the irradiation of light including VUV light (which may be referred to as the integrated irradiation amount or the dose) is made smaller compared to the case of irradiating the surface of the workpiece W with light including VUV light after irradiating the resist pattern. Specifically, it is adjusted so that the irradiation amount of the light including VUV light is 1% - 2% compared to the case of irradiating the surface of the workpiece W with light including VUV light to improve the surface roughness after forming the resist pattern by exposure and development processing. For example, when irradiating the resist pattern with light including VUV light, the amount of light of the light including VUV light is 25 mj / cm 2 ~100 mj / cm 2and can be adjusted. On the other hand, when irradiating the resist film before the exposure process with light containing VUV light, the light amount of the light containing VUV light can be adjusted to about 1 mj / cm 2 ~2 mj / cm 2 or so. Thus, when irradiating the resist film before the exposure process with light containing VUV light, the light amount of the irradiated light can be adjusted to be small.

[0066] Returning to FIG. 8, in step S03, a heat treatment is performed on the workpiece W after irradiating it with light containing VUV light. The heat treatment at this stage is a heat treatment on the non-solidified resist film and is a heat treatment called PAB (Pre Applied Bake).

[0067] In step S04, an exposure process is performed on the workpiece W after the heat treatment (PAB). In the exposure process, an energy beam is irradiated onto the exposure target portion of the resist film formed on the workpiece W using a method such as immersion exposure.

[0068] In step S05, a heat treatment is performed on the workpiece W after the exposure process. The heat treatment at this stage is a heat treatment on the non-solidified resist film and is a heat treatment called PEB (Post Exposure Bake).

[0069] In step S06, a development process is performed on the workpiece W after the heat treatment (PEB). In the development process, after applying a developer solution onto the surface of the workpiece W, it is washed away with a rinse solution. Thereby, a predetermined pattern is formed on the surface of the workpiece W. Note that a heat treatment (PB: Post Bake) may be performed again after the development process. Note that the coating process, heat treatments (PAB, PEB), exposure process, and development process described in steps S01 and S03 to S06 can be performed using, for example, a substrate processing system including known coating / development apparatuses and exposure apparatuses.

[0070] By performing the above-described series of processes, the exposure sensitivity of the resist film is improved compared to the conventional substrate processing method, and furthermore, the roughness of the resist pattern after the exposure and development processes is improved.

[0071] [Function] In the substrate processing apparatus 1 according to the present embodiment, irradiation light L1 including vacuum ultraviolet light is irradiated only to a partial region including the rotation center A1 and the periphery (one end portion) of the rotating workpiece W. Since the workpiece W is rotating, even if the irradiation light L1 is irradiated only to a partial region of the workpiece W, the irradiation light L1 can be irradiated to substantially the entire area of the workpiece W. In the configuration in which the irradiation light L1 is irradiated only to a partial region of the workpiece W, the light source unit 42 can be arranged closer to the workpiece W compared to the configuration in which the irradiation light L1 is irradiated to all regions of the workpiece W, so that the chamber volume can be reduced. Here, in the configuration in which the irradiation light L1 is irradiated only to a partial region of the workpiece W, the region where the irradiation light L1 is continuously irradiated changes according to the rotation of the workpiece W for the regions other than the rotation center A1 of the workpiece W. On the other hand, the irradiation light L1 is always irradiated to the rotation center A1 of the workpiece W. As a result, only the exposure at the rotation center A1 of the workpiece W becomes excessive, and as a result, there is a possibility that the sensitivity of the workpiece W becomes non-uniform in-plane during the exposure process after the vacuum ultraviolet light irradiation. In this regard, in the substrate processing apparatus 1 according to the present embodiment, since the lid portion 52a can be arranged at a position that blocks the irradiation light L1 irradiated to the rotation center, it is appropriately suppressed that only the exposure at the rotation center A1 of the workpiece W becomes excessive. By this, the in-plane uniformity of the irradiation of the irradiation light L1 (light including vacuum ultraviolet light) to the workpiece W before the exposure process can be improved, and as a result, the in-plane uniformity of the sensitivity during the exposure process in the workpiece W can be improved. As described above, according to the substrate processing apparatus 1 according to the present embodiment, the sensitivity during the exposure process in the workpiece W using a resist material suitable for EUV lithography can be made uniform in-plane.

[0072] Further, in the substrate processing apparatus 1, based on the illuminance of the irradiation light L1 measured by the illuminometer 62 included in the measurement unit 60, it is determined whether the exposure amount at the rotation center A1 of the workpiece W exceeds a predetermined threshold value. When it is determined that the exposure amount exceeds the threshold value, the lid portion 52a is transitioned to the first state in which the portion of the irradiation light L1 irradiated to the rotation center is blocked, and in this first state, the irradiation of the irradiation light L1 to the workpiece W is continued. According to such a configuration, when the exposure amount at the rotation center A1 of the workpiece W exceeds a predetermined threshold value, thereafter, the irradiation light L1 is not irradiated to the rotation center A1 of the workpiece W. Thereby, it is appropriately suppressed that only the rotation center A1 of the workpiece W is overexposed. By this, the in-plane uniformity of the irradiation of the irradiation light L1 (light including vacuum ultraviolet light) to the workpiece W before the exposure process can be improved, and as a result, the in-plane uniformity of the sensitivity during the exposure process of the workpiece W can be improved.

[0073] The measurement unit 60 includes, as a plurality of illuminometers, an illuminometer 61 provided at a position corresponding to the optical axis center A2 of the irradiation light L1 irradiated in the first control, and an illuminometer 62 provided on the circumference of a circle Ci passing through the rotation center A1 centered on the optical axis center A2. Since the illuminometer 61 is provided at a position corresponding to the optical axis center A2 of the irradiation light L1, the illuminance at the center of the irradiation light L1 can be measured by the illuminometer 61, so that it is possible to appropriately specify the degradation status of the light source unit 42 itself based on the illuminance measured by the illuminometer 61. Further, as described above, it is important to appropriately obtain the exposure amount at the rotation center A1 of the workpiece W. Usually, a rotation drive unit 27 is provided at the rotation center A1 of the workpiece W, and it is difficult to provide an illuminometer. Here, the irradiation light L1 generally has the highest illuminance at the optical axis center A2, and the illuminance changes according to the separation distance from the optical axis center A2. Therefore, since the illuminometer 62 is provided on the circumference of the circle Ci passing through the rotation center A1 centered on the optical axis center A2, it is possible to appropriately estimate the exposure amount at the rotation center A1 by the illuminometer 62 provided in a region having an illuminance similar to that at the rotation center A1.

[0074] In the second control, the controller 100 determines whether or not the exposure amount at the rotation center A1 exceeds the threshold value based on the illuminance of the irradiation light L1 measured by the illuminometer 62 during the first control. According to such a configuration, it becomes possible to estimate the exposure amount at the rotation center A1 during the first control, and the above-described first control to fourth control can be performed quickly and simply.

[0075] The rotation center shutter 52 has a lid portion 52a configured to be arranged so as to cover the rotation center A1. In the first state, the controller 100 arranges the lid portion 52a at a position that blocks the irradiation light L1 irradiated to the rotation center A1. Further, in the second state, the controller 100 arranges the lid portion 52a at a position that does not block the irradiation light L1. According to the configuration in which the first state and the second state are switched by opening and closing the lid in this way, it is possible to realize the exposure amount adjustment at the optical axis center A2 with a simple configuration.

[0076] The substrate processing apparatus 1 further includes a light shielding plate 54 that restricts the irradiation range of the irradiation light L1 reaching the workpiece W by allowing only the irradiation light L1 to pass through the opening portion 54a. The opening portion 54a of the light shielding plate 54 has a substantially fan-shaped shape defined by two radii 54x, 54x extending from the rotation center A1 toward the periphery (one end) of the workpiece W and an arc 54y connecting the end points of the radius 54x. The radius 54x of the opening portion 54a has a shape that is recessed inward in the circumferential direction at least in a portion close to the rotation center A1.

[0077] As described above, the irradiation light L1 generally has the highest illuminance at the optical axis center A2, and the illuminance changes according to the separation distance from the optical axis center A2. However, there may be a region where the illuminance increases again near the outer periphery of the irradiation range. When such a portion with high illuminance near the outer periphery of the irradiation light L1 is irradiated onto the outer peripheral portion of the work W, which is the peripheral edge (one end portion) of the work W, there is a risk that the exposure amount of only the outer peripheral portion of the work W becomes excessive. In order to suppress such a situation, for example, it is conceivable to shift the irradiation range of the irradiation light L1 outward so that the region with high illuminance near the outer periphery described above is not irradiated onto the outer peripheral portion of the work W. However, in this case, by shifting the irradiation range of the irradiation light L1 outward, there is a possibility that a region with high illuminance near the outer periphery of the irradiation light L1 is located at the rotation center A1 of the work W, and the exposure amount at the rotation center A1 may become excessive, which can be a problem. In this regard, the opening portion 54a of the light shielding plate 54 has a substantially fan-shaped shape, and the portion close to the rotation center A1 at the radii 54x, 54x of the opening portion 54a is shaped to be recessed inward in the circumferential direction. Thereby, the amount of the irradiation light L1 passing through the light shielding plate 54 in the region close to the rotation center A1 can be reduced, and it is possible to effectively suppress the exposure amount at the rotation center A1 from becoming excessive.

[0078] [Modification Example] As described above, various exemplary embodiments have been described. However, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and changes may be made. Also, it is possible to combine elements in different embodiments to form other embodiments.

[0079] For example, as an example of the shielding part configured to be able to transition between the first state and the second state, the example of the rotary center shutter 52 was described, but the shielding part may have other configurations. For example, the shielding part may be the shutter part 152 shown in FIG. 10. As shown in FIG. 10(a), the shutter part 152 is disposed above the light shielding plate 54 so as to overlap the light shielding plate 54. Note that in the opening part 54a of the light shielding plate 54 shown in FIG. 10, the portion around the rotation center A1 is a circular part 54z. The shutter part 152 has a circular shape, and an opening 152a is formed in a part of the region. The opening 152a is a circular opening. The shutter part 152 is configured to be rotatable.

[0080] In such a configuration, in the first state, the controller 100 controls the shutter part 152 so as to block the irradiation light L1 that irradiates the rotation center A1 with the portion other than the opening 152a in the shutter part 152. In this case, the shutter part 152, for example, stops without rotating. On the other hand, in the second state, the controller 100 rotates the shutter part 152 as shown in FIG. 10(b). Thereby, the controller 100 controls the shutter part 152 so that the state in which the irradiation light L1 that has passed through the opening 152a irradiates the rotation center A1 and the state in which the portion other than the opening 152a blocks the irradiation light L1 that irradiates the rotation center A1 are alternately repeated.

[0081] According to such a configuration, after it is determined that the exposure amount at the rotation center A1 exceeds the threshold value, the irradiation light irradiating the rotation center A1 by the portion other than the opening 152a in the shutter part 152 is surely blocked. On the other hand, in the state (second state) where it is still determined that the exposure amount at the rotation center A1 does not exceed the threshold value, the shutter part 152 rotates. Thereby, the state in which the irradiation light L1 that has passed through the opening 152a of the shutter part 152 irradiates the rotation center A1 and the state in which the portion other than the opening 152a blocks the irradiation light L1 that irradiates the rotation center A1 are alternately repeated. By this, in the second state, it becomes possible to adjust the exposure amount at the rotation center according to the rotation speed (rotation number) of the shutter part 152, and more fine adjustment of the exposure amount becomes possible.

[0082] Further, as shown in FIG. 11(a), when the work W is not supported by the holding unit 26, the controller 100 may control the light irradiation mechanism 240 (light source) so that the portion of the irradiation light L1 irradiated to the rotation center A1 by the first control is irradiated to the illuminometer 62. Such control (fifth control) may be performed, for example, before the work W is carried in, or may be performed during so-called idle time. As shown in FIG. 11(b), the light irradiation mechanism 240 includes a light source unit 42, a motor 201, and a belt 202. The belt 202 is a member that transmits the drive from the motor 201 to the light source unit 42. The motor 201 rotates the light source unit 42 180° (changes the direction of the light source unit 42) via the belt 202 by its driving force, and changes the irradiation position of the irradiation light L1 irradiated from the light source unit 42. In such a configuration, when the first control is not performed and the work W is not supported by the holding unit 26, the motor 201 is driven to rotate the light source unit 42, so that the portion of the irradiation light L1 irradiated to the rotation center A1 by the first control is irradiated to the illuminometer 62. Then, in the second control, the controller 100 determines whether the exposure amount at the rotation center A1 exceeds a threshold value based on the illuminance of the irradiation light L1 measured by the illuminometer 62 during the fifth control and, for example, the elapsed time since the start of the first control.

[0083] As described above, the illuminance of the irradiation light L1 generally changes according to the distance from the optical axis center A2. However, even on the circumference of the circle passing through the rotation center A1 with the optical axis center A2 as the center, the illuminance is not exactly the same between the actual rotation center A1 and other points on the circumference. In this regard, in the fifth control different from the first control, the orientation of the light source unit 42 and the like are adjusted so that the portion of the irradiation light irradiated to the rotation center A1 by the first control is irradiated by the illuminometer 62. Thereby, an illuminance closer to the illuminance of the portion of the irradiation light L1 actually irradiated to the rotation center A1 by the first control can be obtained. Then, by estimating the exposure amount at the rotation center A1 based on the illuminance thus obtained, the estimation accuracy of the exposure amount can be improved, and as a result, the in-plane uniformity of the irradiation of the irradiation light L1 to the work W before the exposure process can be further improved.

[0084] Also, as shown in FIGS. 12(a) and 12(b), the light source unit 42 may be disposed at a position where the irradiation light L1 is irradiated from an oblique direction with respect to the workpiece W. According to such a configuration, compared with the case where the irradiation light L1 is disposed perpendicular to the workpiece W, the irradiation light can be irradiated to a larger area while bringing the light source unit 42 closer to the workpiece W. That is, in irradiating the necessary and sufficient area with the irradiation light L1 while reducing the chamber volume, a configuration in which the irradiation light L1 is irradiated from an oblique direction with respect to the workpiece W is suitable.

[0085] Furthermore, as shown in FIG. 12(b), the light source unit 42 may be disposed at a position where the distance to one end Wa (one end on the side where the irradiation light L1 is irradiated), which is the periphery of the workpiece W, is closer than the distance to the rotation center A1. When the light source unit 42 is disposed such that the irradiation light L1 is irradiated to the workpiece W from an oblique direction, the distance from the light source unit 42 to each region of the workpiece W does not become constant. The exposure amount increases as the distance from the light source unit 42 becomes closer. If the distance from the light source unit 42 to the rotation center A1 is made closer, the exposure amount at the rotation center, where the irradiation light L1 is always irradiated and the exposure amount is already large, will further increase. In this regard, by making the distance from the light source unit 42 to one end Wa of the workpiece W closer than the distance from the light source unit 42 to the rotation center A1, it is possible to suppress the exposure amount at the rotation center A1 from becoming excessive easily.

[0086] Also, as shown in FIG. 13(a), a plurality of light source units 542, 642, 742, 842 may be arranged as the light source unit. In such a configuration, for example, by the opening and closing operation of the lamp shutter 351, the state where the irradiation light L1 from each light source unit 542, 642, 742, 842 reaches the workpiece W and the state where it does not reach are switched. As shown in FIG. 13(b), for example, first, the irradiation light L1 is irradiated from the light source unit 542, and the irradiation light L1 that has passed through the opening portion 354a of the light shielding plate 354 is irradiated onto the workpiece W. Then, for example, when the lamp of the light source unit 542 becomes non-irradiable due to its lifespan, the light source unit that irradiates the irradiation light L1 is switched to the light source unit 642, and the irradiation light L1 irradiated by the light source unit 642 is irradiated onto the workpiece W. The lamp replacement timing is about 3 months, for example. By adopting a configuration in which a plurality of light source units are arranged and switched as in this configuration, the maintenance cycle of lamp replacement can be extended.

Explanation of Reference Numerals

[0087] 1... Substrate processing apparatus, 25... Rotational support unit (substrate support unit), 40, 240... Light irradiation mechanism (light source), 51a... Shielding plate (shutter), 52... Rotational center shutter (shielding unit), 52a... Cover portion, 53... Translucent plate, 54... Light shielding plate, 54a... Opening portion, 54x... Radius, 54y... Arc, 60... Measurement unit, 61, 62... Illuminance meters (first illuminance meter, second illuminance meter), 100... Controller (control unit), 152... Shutter unit, A1... Rotational center, A2... Optical axis center, W... Workpiece (substrate).

Claims

1. A substrate support configured to support a substrate with a resist film formed of a resist material for EUV lithography while rotating the substrate; A light source that irradiates irradiation light including vacuum ultraviolet light; A shutter that switches between a state where the irradiation light reaches the substrate and a state where it does not reach the substrate by moving between the optical path of the irradiation light and a region outside the optical path; A transparent plate that transmits the irradiation light; A light shielding plate that restricts the irradiation range of the irradiation light reaching the substrate by allowing only the irradiation light to pass through the opening portion; A shielding portion that can be disposed at a position to block the irradiation light irradiated to the rotation center of the substrate supported and rotated by the substrate support portion, and comprising: The irradiation light is irradiated to a partial region on the surface of the substrate that is a radially continuous region; A substrate processing apparatus, wherein the light source, the shutter, the transparent plate, the shielding portion, and the light shielding plate are arranged in this order from the light source toward the substrate.

2. A substrate support configured to support a substrate with a resist film formed of a resist material for EUV lithography while rotating the substrate; A light source that irradiates irradiation light including vacuum ultraviolet light; A shutter that switches between a state where the irradiation light reaches the substrate and a state where it does not reach the substrate by moving between the optical path of the irradiation light and a region outside the optical path; A transparent plate that transmits the irradiation light; A light shielding plate that restricts the irradiation range of the irradiation light reaching the substrate by allowing only the irradiation light to pass through the opening portion; A shielding portion that can be disposed at a position to block the irradiation light irradiated to the rotation center of the substrate supported and rotated by the substrate support portion, and comprising: The irradiation light is irradiated to a partial region on the surface of the substrate that is a radially continuous region; A measurement unit having one or more illuminance meters for measuring the illuminance of the irradiation light; A control unit, and further comprising: The shielding portion is configured to be capable of transitioning between a first state in which the portion of the irradiation light irradiated to the rotation center of the substrate is always blocked and a second state which is a state other than the first state; The control unit, In a state where the shielding portion is in the second state, a first control for controlling the light source so that the irradiation light is irradiated only to a partial region including the rotation center of the substrate and one end portion of the substrate with respect to the substrate supported and rotated by the substrate support portion; Second control for determining whether the exposure amount at the rotation center exceeds a predetermined threshold based on the illuminance of the irradiation light measured by the illuminance meter, and is configured to execute the second control. The measurement unit includes, as the plurality of illuminance meters, a first illuminance meter provided at a position corresponding to the optical axis center of the irradiation light irradiated in the first control, and a second illuminance meter provided on the circumference of a circle passing through the rotation center centered on the optical axis center. In the second control, the control unit determines whether the exposure amount at the rotation center exceeds the threshold based on the illuminance of the irradiation light measured by the second illuminance meter during the first control. A substrate processing apparatus.

3. A substrate support portion configured to be able to support a substrate with a resist film formed of a resist material for EUV lithography while rotating the substrate. A light source that irradiates irradiation light including vacuum ultraviolet light. A shutter that switches between a state where the irradiation light reaches the substrate and a state where it does not reach the substrate by moving between the optical path of the irradiation light and an area outside the optical path. A light transmissive plate that transmits the irradiation light. A light shielding plate that restricts the irradiation range of the irradiation light reaching the substrate by allowing only the irradiation light to pass through the opening portion. A shielding portion that can be disposed at a position that blocks the irradiation light irradiated to the rotation center of the substrate supported and rotated by the substrate support portion. The irradiation light is irradiated to a partial area on the surface of the substrate that is a radially continuous area. A measurement unit having one or more illuminance meters for measuring the illuminance of the irradiation light. Further comprising a control unit. The shielding portion is configured to be able to transition between a first state in which the portion of the irradiation light irradiated to the rotation center of the substrate is always blocked and a second state that is a state other than the first state. The control unit. First control for controlling the light source so that the irradiation light is irradiated only to a partial area including the rotation center of the substrate and one end portion of the substrate with respect to the substrate supported and rotated by the substrate support portion in a state where the shielding portion is in the second state. Second control for determining whether the exposure amount at the rotation center exceeds a predetermined threshold based on the illuminance of the irradiation light measured by the illuminance meter. Third control for transitioning the shielding portion to the first state when it is determined in the second control that the exposure amount at the rotation center exceeds the threshold. configured to execute a fourth control for controlling the light source so that the irradiation of the irradiation light on the substrate is continued with the shielding portion in the first state; The measurement unit includes, as the plurality of illuminance meters, a first illuminance meter provided at a position corresponding to the optical axis center of the irradiation light irradiated in the first control, and a second illuminance meter provided on the circumference of a circle passing through the rotation center centered on the optical axis center; In the second control, the control unit determines whether or not the exposure amount at the rotation center exceeds the threshold value based on the illuminance of the irradiation light measured by the second illuminance meter during the first control. A substrate processing apparatus.

4. A substrate support portion configured to be able to support a substrate on which a resist film made of a resist material for EUV lithography is formed while rotating; A light source that irradiates irradiation light including vacuum ultraviolet light; A shutter that switches between a state where the irradiation light reaches the substrate and a state where it does not reach the substrate by moving between the optical path of the irradiation light and a region outside the optical path; A transparent plate that transmits the irradiation light; A light shielding plate that restricts the irradiation range of the irradiation light reaching the substrate by allowing only the irradiation light to pass through the opening portion; A shielding portion that can be disposed at a position that blocks the irradiation light irradiated to the rotation center of the substrate supported and rotated by the substrate support portion; The irradiation light is irradiated to a partial region on the surface of the substrate, which is a radially continuous region; A measurement unit having one or more illuminance meters for measuring the illuminance of the irradiation light; Further comprising a control unit; The shielding portion is configured to be able to transition between a first state in which the portion of the irradiation light irradiated to the rotation center of the substrate is always blocked and a second state which is a state other than the first state; The control unit a first control for controlling the light source so that the irradiation light is irradiated only to a partial region including the rotation center of the substrate and one end portion of the substrate with respect to the substrate supported and rotated by the substrate support portion with the shielding portion in the second state; a second control for determining whether or not the exposure amount at the rotation center exceeds a predetermined threshold value based on the illuminance of the irradiation light measured by the illuminance meter; a third control for transitioning the shielding portion to the first state when it is determined in the second control that the exposure amount at the rotation center exceeds the threshold value; configured to execute fourth control for controlling the light source so that the irradiation light on the substrate continues to be irradiated with the shielding portion in the first state; The measurement unit includes, as the plurality of illuminance meters, a first illuminance meter provided at a position corresponding to the optical axis center of the irradiation light irradiated in the first control, and a second illuminance meter provided on the circumference of a circle passing through the rotation center centered on the optical axis center. The control unit In a state where the substrate is not supported by the substrate support unit, the control unit further executes fifth control for controlling the light source so that a portion of the irradiation light irradiated to the rotation center in the first control is irradiated to the second illuminance meter. In the second control, based on the illuminance of the irradiation light measured by the second illuminance meter during the fifth control, it is determined whether the exposure amount at the rotation center exceeds the threshold value, a substrate processing apparatus.

5. The substrate processing apparatus according to any one of claims 2 to 4, wherein the shutter, the light-transmitting plate, the shielding portion, and the light-shielding plate are arranged in this order from the light source toward the substrate.

6. The shielding portion has a lid portion configured to be arranged so as to cover the rotation center. The control unit arranges the lid portion at a position that blocks the irradiation light irradiated to the rotation center in the first state, and arranges the lid portion at a position that does not block the irradiation light in the second state. The substrate processing apparatus according to any one of claims 2 to 5.

7. The shielding portion has a shutter portion configured to have an opening and be rotatable. In the first state, the control unit arranges the shutter portion so that a portion other than the opening in the shutter portion blocks the irradiation light irradiated to the rotation center. In the second state, by rotating the shutter portion, a state in which the irradiation light passing through the opening is irradiated to the rotation center and a state in which a portion other than the opening blocks the irradiation light irradiated to the rotation center are alternately repeated. The substrate processing apparatus according to any one of claims 2 to 5, which controls the shutter portion.

8. The substrate processing apparatus according to any one of claims 1 to 7, wherein the light source is arranged at a position where the irradiation light is irradiated from an oblique direction with respect to the substrate.

9. The substrate processing apparatus according to claim 8, wherein the light source is disposed at a position where the distance to one end of the substrate is closer than the distance to the rotation center.

10. Performing first control of irradiating light only on a partial region including the rotation center of the substrate and one end of the substrate with respect to a rotating substrate on which a resist film made of a resist material for EUV lithography is formed; Performing second control of determining whether or not an exposure amount at the rotation center exceeds a predetermined threshold based on the illuminance of the irradiated light measured by an illuminometer provided on the circumference of a circle passing through the rotation center centered on the optical axis center of the irradiated light during the first control; When it is determined that the exposure amount at the rotation center exceeds the threshold, arranging a shielding portion so as to shield a portion of the irradiated light irradiated to the rotation center; A substrate processing method including continuing irradiation of the irradiated light on the substrate in a state where the shielding portion is arranged.

11. A computer-readable storage medium storing a program for causing an apparatus to execute the substrate processing method according to claim 10.

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