Sputtering apparatus

Abstract

This sputtering device is provided with a cathode unit for emitting sputter particles toward a surface to be treated of a substrate on which a film is to be formed. The cathode unit has a target, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The auxiliary magnet causes magnetic field lines formed by a magnet positioned at a first oscillation end to tilt toward a second oscillation end along the magnet positioned at the first oscillation end.

Description

Technical Field

[0001] The present invention relates to a sputtering apparatus, and particularly to a technique suitable for use in film formation having a magnetron cathode. This application claims priority based on Japanese Patent Application No. 2021-192171 filed in Japan on November 26, 2021, and incorporates the content herein by reference.

Background Art

[0002] In a film forming apparatus having a magnetron cathode, a method of moving a magnet relative to a target is known for the purpose of improving the utilization efficiency of the target.

[0003] Also, as in the technique disclosed in Patent Document 1, for the purpose of improving the uniformity of a film formed by a film forming method, in addition to moving the magnet, it is also known to swing the cathode and the target relative to the substrate to be film-formed.

[0004] Also, as in the technique disclosed in Patent Document 2, it is known to swing the magnet and the cathode for the purpose of preventing the generated particles from adversely affecting film formation in the sputtering chamber.

[0005] Furthermore, as a technique for swinging the substrate to be film-formed relative to the magnet and the cathode, the present applicants have disclosed a technique such as Patent Document 3.

Prior Art Documents

Patent Documents

[0006]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0007] However, even in the technique of scanning (oscillating) a magnet with respect to a target as described above, a non-erosion region is generated. In the vicinity of the peripheral portion of the film formation region close to the edge of the oscillation region of the magnet, the non-erosion region may cause particle generation. There has been a demand to eliminate the generation of such non-erosion regions. In particular, when the boundary between the non-erosion region and the erosion region is blurred rather than the generation of the non-erosion region, it has been found that this causes particle generation problems such as the occurrence of re-sputtering of the re-deposition film (re-deposited film, sputtered film deposited on the target). In addition, when a non-erosion region is generated in the technique of scanning (oscillating) a magnet with respect to a target, in the vicinity of the peripheral portion of the film formation region close to the oscillation region of the magnet, the film thickness decreases, and unevenness occurs in the film thickness distribution and film quality distribution. Such problems have not yet been solved. Furthermore, with the increase in the size of the substrate, the demand for improving such problems has been increasing.

[0008] The present invention has been made in view of the above circumstances, and aims to achieve the following objectives. 1. Suppress the generation of a blurred region around the non-erosion generation region to reduce the cause of particle generation. 2. Stabilize the formed plasma distribution and improve the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the oscillation position of the magnet.

Means for Solving the Problems

[0009] As a result of intensive research, the inventors of the present application have succeeded in suppressing particle generation due to the non-erosion region and suppressing variations in the film thickness distribution and film quality characteristic distribution.

[0010] During sputtering, a magnetic field (magnetic field, magnetic lines of force) is generated from the magnet by the applied power. At this time, the plasma or electrons contributing to sputtering move along the magnetic lines of force generated from the magnet. Among the magnetic lines of force generated by the magnet, the magnetic lines of force contributing to plasma generation reach the S pole while forming an arc from the N pole toward the target among the two poles of the magnet arranged flush and parallel to the target. At this time, the magnetic lines of force by the magnet penetrate in the thickness direction from the N pole toward the target from the back side to the front side, are formed in an arc shape in the plasma generation space, and penetrate in the thickness direction from the front side to the back side of the target and return to the S pole.

[0011] A portion at ground potential such as an anode is arranged around the end of the target. In this state, when the magnet is scanned (oscillated) and the magnet is positioned near the oscillation end, the magnet is in a position close to this anode. Then, in the vicinity of the oscillation end of the magnet, a phenomenon may occur in which the magnetic lines of force generated from the N pole go toward the anode close to the magnetic lines of force and do not return to the S pole. Then, since the electrons are tracked (move) along the magnetic lines of force, they do not return to the plasma formation space and flow to the anode without contributing to plasma formation. This is called that the electrons are absorbed.

[0012] When the electrons are absorbed by the anode, the electron density on the front surface side of the target, that is, in the plasma generation space, decreases. Then, a phenomenon may occur in which the formed plasma density decreases or plasma is not generated. This is called that the plasma is absorbed. When such a phenomenon occurs, since the target is not sputtered by the plasma, a non-erosion region is generated, and furthermore, the non-erosion region may become larger.

[0013] Here, when electrons are absorbed by the anode, on-off of the plasma near the anode occurs due to the oscillation of the magnet or the like. As a result, on-off of sputtering by the plasma occurs. Then, the possibility of generating particles due to sputtering of the re-deposition film increases.

[0014] That is, due to the generation of the non-erosion region, particles may be generated near the peripheral portion of the film formation region close to the oscillation region of the magnet. At this time, the boundary between the non-erosion region and the erosion region becomes unclear, and an erosion-non-erosion boundary region is formed.

[0015] As described above, it has been found that when the boundary between the non-erosion region and the erosion region is blurred rather than the generation of the non-erosion region, this causes the generation of particles that become problems such as re-sputtering of the re-deposition film.

[0016] As described above, when electrons are absorbed by the anode, the magnetic field lines from the magnet are in a state of heading toward the anode, that is, in a state of being inclined outward from the thickness direction of the target toward the contour of the target.

[0017] Therefore, in order to solve such problems, the inventors of the present application have found that it is possible to reduce the amount of electrons absorbed by making the magnetic field lines generated from the magnet at the oscillation end of the magnet not head toward the anode. That is, the inventors of the present application have found that inclining the magnetic field lines generated from the magnet at one end of the oscillation end of the magnet toward the other end of the oscillation end of the magnet rather than the thickness direction of the target, that is, inclining inward from the thickness direction of the target toward the contour of the target, is effective in reducing the non-erosion region.

[0018] In the above description, the magnetic field lines are described according to the normal notation so as to reach from the N pole to the S pole, but there is no problem in understanding the phenomenon even with the reverse polarity.

[0019] Furthermore, when a non-erosion region occurs, plasma generation is suppressed. Therefore, the applied supply power becomes surplus without being consumed for plasma generation. This surplus power is redistributed to a region different from the original non-erosion region or absorbed as the overall voltage (power) fluctuation. Consequently, plasma generation conditions fluctuate like voltage fluctuations, which ultimately causes variations in the film thickness distribution and an expansion of the variations in the film quality characteristics distribution.

[0020] That is, when electrons are absorbed by the anode, variations in the film thickness distribution and variations in the film quality characteristics distribution expand due to the occurrence of a non-erosion region.

[0021] Furthermore, when a non-erosion region occurs, a non-erosion region different from the original non-erosion region may occur due to partial fluctuations in plasma generation conditions caused by voltage fluctuations or the like. In this case, particle generation and variations in the film thickness distribution, film quality characteristics distribution, etc. will expand.

[0022] Therefore, in order to solve this problem, the inventors of the present application have found that it is possible to reduce the amount of electrons absorbed by making the magnetic field lines generated from the magnet not face the anode at one end of the oscillating end of the magnet. That is, the inventors of the present application have found that inclining the magnetic field lines generated from the magnet toward the other end of the oscillating end of the magnet rather than in the thickness direction of the target, that is, inclining inward of the contour of the target rather than in the thickness direction of the target, is effective in suppressing the occurrence of variations in the film thickness distribution and film quality characteristics distribution.

[0023] In view of these, the inventors of the present application have completed the present invention as follows. A sputtering apparatus according to an aspect of the present invention includes a cathode unit that emits sputtering particles toward a surface to be processed of a substrate to be film-formed. The cathode unit includes a target in which an erosion region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit is disposed on the side opposite to the substrate to be film-formed with respect to the target and has a plurality of magnets that form the erosion region in the target. The magnet scanning unit is relatively reciprocally movable between a first swing end and a second swing end in a swing direction along the surface to be processed of the substrate to be film-formed between the magnet unit and the substrate to be film-formed. The auxiliary magnet inclines magnetic field lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end among the plurality of magnets extending in an intersecting direction intersecting the swing direction along the surface to be processed of the substrate to be film-formed. The auxiliary magnet is disposed on the side opposite to the second swing end with respect to the first swing end along the magnet located at the first swing end, and the auxiliary magnet is swingable integrally with the magnet. It is. The auxiliary magnet has the same polarity as the magnet located at the first swing end. Do. The magnetic strength of the auxiliary magnet is equal to or smaller than the magnetic strength of the magnet located at the first swing end. Yes. The auxiliary magnet has a protrusion protruding toward the target along the magnet. Do . In the sputtering apparatus according to an aspect of the present invention, the auxiliary magnet may be disposed on the side opposite to the substrate to be processed with respect to the target and attached and fixed to a yoke that forms a magnetic circuit. In a sputtering apparatus according to an aspect of the present invention, the cathode unit includes a flat yoke having a central region made of a magnetic material on its surface, an auxiliary yoke adjacent to the yoke, a central magnet portion linearly disposed in the central region of the yoke, a peripheral magnet portion provided to surround the central magnet portion, a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other, a magnetic circuit provided on the surface of the yoke, and a backing plate disposed so as to overlap the magnetic circuit. Each of the plurality of magnets constituting the magnet unit is disposed on the yoke. The auxiliary magnet is disposed parallel to the peripheral magnet portion. The auxiliary magnet is fixed to the yoke via the auxiliary yoke. The auxiliary yoke may be made of a magnetic material or a dielectric material. In a sputtering apparatus according to an aspect of the present invention, the auxiliary yoke and the auxiliary magnet may be removable from the yoke. In a sputtering apparatus according to an aspect of the present invention, the magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generation regions divided in the intersecting direction. Each of the magnetic field generation regions has a divided yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet. In the intersecting direction and the thickness direction of the yoke, the position of each of the magnetic field generation regions is adjustable. The magnet having the plurality of magnetic field generation regions whose positions are adjusted may be swingable by the magnet scanning unit.

[0024] A sputtering apparatus according to an aspect of the present invention includes a cathode unit that emits sputtering particles toward a surface to be processed of a substrate to be film-formed. The cathode unit includes a target in which an erosion region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit is disposed on the side opposite to the substrate to be film-formed with respect to the target and has a plurality of magnets that form the erosion region in the target. The magnet scanning unit is capable of relatively reciprocating between a first swing end and a second swing end in a swinging direction along the surface to be processed of the substrate to be film-formed between the magnet unit and the substrate to be film-formed. The auxiliary magnet inclines magnetic field lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end among the plurality of magnets extending in an intersecting direction intersecting the swinging direction along the surface to be processed of the substrate to be film-formed. Thereby, among the plurality of magnets, the magnetic field lines formed by the magnet located at the first swing end can be inclined using the magnetic field generated by the auxiliary magnet. Therefore, it is possible to reduce the amount of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the decrease in plasma density. As a result, the erosion-non-erosion boundary region can be effectively reduced, and the generation of particles caused by the formation of the erosion-non-erosion boundary region can be reduced. At the same time, it is possible to suppress fluctuations in the supply conversion voltage, suppress fluctuations in the plasma density due to the swinging position of the magnet, stabilize the plasma generation state, and effectively suppress variations in the film thickness distribution and film quality characteristics distribution.

[0025] In the sputtering apparatus according to an aspect of the present invention, the auxiliary magnet is disposed on the side opposite to the second swing end with respect to the first swing end along the magnet located at the first swing end, and the auxiliary magnet may be swingable integrally with the magnet. As a result, regardless of the swinging position of the magnet, a decrease in magnetic field lines from the magnet is suppressed. The plasma generation state is stabilized, and the formation of an erosion - non - erosion boundary region is suppressed. Generation of particles is suppressed, and variations in film thickness distribution and film quality characteristic distribution can be suppressed.

[0026] In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have the same polarity as the magnet located at the first swinging end. As a result, magnetic field lines from the magnet that generates plasma are repelled by magnetic field lines from the auxiliary magnet. Thereby, it becomes possible to tilt in a predetermined direction while maintaining the required magnetic strength (magnetic flux density). Therefore, without causing a decrease in plasma density, the formation of an erosion - non - erosion boundary region is suppressed. Generation of particles is suppressed, and variations in film thickness distribution and film quality characteristic distribution can be suppressed.

[0027] In the sputtering apparatus according to one aspect of the present invention, the magnetic strength of the auxiliary magnet may be equal to or less than the magnetic strength of the magnet located at the first swinging end. As a result, it becomes possible to tilt magnetic field lines from the magnet that generates plasma to a predetermined angle without excessively tilting them with magnetic field lines from the auxiliary magnet. Therefore, without causing an unnecessary decrease in plasma density and without generating an unnecessary non - erosion boundary region, the formation of an erosion - non - erosion boundary region is suppressed. Generation of particles is suppressed, and variations in film thickness distribution and film quality characteristic distribution can be suppressed.

[0028] In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have a protrusion that protrudes toward the target along the magnet. As a result, the magnetic field lines of the auxiliary magnet can be concentrated and formed from the ridges. This enables the magnetic field lines of the auxiliary magnet to efficiently incline the magnetic field lines from the magnet that generates plasma without being dispersed. Therefore, the auxiliary magnet can be miniaturized and lightened, and the magnet and the auxiliary magnet can be swung without imposing an excessive burden on the magnet scanning unit. This suppresses the formation of an erosion-non-erosion boundary region without causing a decrease in plasma density or generating an unnecessary non-erosion boundary region. Generation of particles can be suppressed, and variations in film thickness distribution and film quality characteristics distribution can be suppressed.

[0029] In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed on the side opposite to the substrate to be processed with respect to the target and attached and fixed to a yoke that forms a magnetic circuit. As a result, the auxiliary magnet can swing integrally with the magnet. Furthermore, regardless of the swing position, the auxiliary magnet can keep the inclination of the magnetic field lines with respect to the magnet located at the first swing end constant. Also, the magnetism of the auxiliary magnet can be incorporated into the magnetic circuit of the magnet formed together with the yoke, and plasma can be generated more efficiently.

[0030] In a sputtering apparatus according to one aspect of the present invention, the cathode unit includes a flat yoke having a central region made of a magnetic material on its surface, an auxiliary yoke adjacent to the yoke, a central magnet portion linearly arranged in the central region of the yoke, a peripheral magnet portion provided so as to surround the central magnet portion, a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other, a magnetic circuit provided on the surface of the yoke, and a backing plate disposed so as to overlap the magnetic circuit. Each of the plurality of magnets constituting the magnet unit is disposed on the yoke. The auxiliary magnet is disposed parallel to the peripheral magnet portion. The auxiliary magnet is fixed to the yoke via the auxiliary yoke, and the auxiliary yoke may be made of a magnetic material or a dielectric. Thereby, the magnetic pole surface of the peripheral magnet portion is disposed along a plane parallel to the film-forming substrate. The magnetic force lines of the peripheral magnet located at the first swing end in the swing direction are inclined in a direction away from the second swing end rather than in a direction orthogonal to the magnetic pole surface, at least in a direction from the magnetic pole surface toward the second swing end. Thereby, even when the magnet is in the swing position closest to the anode, the amount of electrons absorbed by the anode can be reduced. It is possible to prevent the plasma density from decreasing at the periphery in the swing direction, and to suppress the formation of an erosion-non-erosion boundary region without generating an unnecessary non-erosion boundary region. Generation of particles can be suppressed, and variations in film thickness distribution and film quality characteristics distribution can be suppressed.

[0031] In a sputtering apparatus according to one aspect of the present invention, the auxiliary yoke and the auxiliary magnet may be removable from the yoke. Thereby, when performing processing under different processing conditions in the sputtering apparatus, it is necessary to form magnetic force lines according to the processing conditions. For this purpose, it is necessary to vary the inclination angle of the magnetic force lines from the magnet at the swing end. In this case, by replacing the auxiliary magnet, it is possible to easily perform setting changes.

[0032] In the sputtering apparatus according to one aspect of the present invention, the magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generation regions divided in the crossing direction, and each of the magnetic field generation regions has a divided yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet, and in the crossing direction and the thickness direction of the yoke, the position of each of the magnetic field generation regions is adjustable, and the magnet having the plurality of magnetic field generation regions whose positions are adjusted may be swingable by the magnet scanning unit. For controlling the film formation state over the entire film formation region, for example, when adjusting the conditions of the magnetic flux density related to plasma generation in the crossing direction and the thickness direction of the yoke. According to this configuration, a plurality of magnetic field generation regions are divided, and the positions in the crossing direction and the thickness direction of the yoke in each of the plurality of magnetic field generation regions are adjustable. Therefore, it is possible to adjust the conditions of the magnetic flux density in each of the plurality of magnetic field generation regions. By adjusting each of the plurality of magnetic field generation regions in the crossing direction and the thickness direction of the yoke, in each of the plurality of magnetic field generation regions, the magnetic field lines of the peripheral magnetic poles in the magnet located at the first swing end can be inclined in a required direction by the divided auxiliary magnet. In each of the plurality of magnetic field generation regions, a state where the magnetic field lines are inclined in a required direction can be maintained.

Advantages of the Invention

[0033] According to the sputtering apparatus according to one aspect of the present invention, it is possible to maintain the plasma density by maintaining the required magnetic flux density. Further, it is possible to suppress the generation of a blurred region around the non-erosion generation region, reduce particles, and stabilize the formed plasma distribution. It is possible to achieve the effect of improving the uniformity of the film thickness distribution and the film thickness characteristic distribution regardless of the swing position of the magnet.

Brief Description of the Drawings

[0034]

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Embodiments for Carrying Out the Invention

[0035] Hereinafter, a sputtering apparatus and a sputtering method according to embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic plan view showing a sputtering apparatus according to this embodiment. In FIG. 1, reference numeral 1 denotes a sputtering apparatus.

[0036] <Sputtering apparatus 1> The sputtering apparatus 1 according to this embodiment is an example of an inter-back type vacuum processing apparatus. Such a vacuum processing apparatus is used, for example, in the manufacturing process of semiconductor devices, and in the manufacturing process of FPDs (flat panel displays) such as liquid crystal displays and organic EL displays. Specifically, in such a vacuum processing apparatus, when forming a TFT (Thin Film Transistor) on a substrate made of glass or the like, heat treatment, film formation treatment, etching treatment, etc. are performed on the substrate to be processed made of glass or resin in a vacuum environment.

[0037] In this embodiment, as the glass substrate 11 (substrate to be film-formed, transparent substrate), a substrate having a side length of about 100 mm or a rectangular substrate having a side length of 2000 mm or more can be applied. Furthermore, substrates with a thickness of 1 mm or less, substrates with a thickness of several mm, and substrates with a thickness of 10 mm or more can also be used for the glass substrate 11.

[0038] As shown in Fig. 1, the sputtering apparatus 1 includes a load / unload chamber 2 (vacuum chamber), a film formation chamber 4 (vacuum chamber), and a transfer chamber 3. The load / unload chamber 2 is for loading and unloading a substantially rectangular glass substrate 11 from and to the outside. In the film formation chamber 4, films such as ZnO-based or In2O3-based transparent conductive films, films of metals or oxides such as aluminum and silver, and other films are formed on the glass substrate 11 by sputtering. The film formation chamber 4 has pressure resistance. The transfer chamber 3 is located between the film formation chamber 4 and the load / unload chamber 2. As the sputtering apparatus 1 according to this embodiment, Fig. 1 shows a side sputtering type sputtering apparatus. A sputter-down type sputtering apparatus or a sputter-up type sputtering apparatus can also be adopted for the sputtering apparatus 1.

[0039] In addition to the above-described configuration, the sputtering apparatus 1 has a film formation chamber 4A (vacuum chamber) and a load / unload chamber 2a (vacuum chamber). The plurality of vacuum chambers 2, 2a, 4, 4A described above are arranged so as to surround the transfer chamber 3. The sputtering apparatus 1 having such vacuum chambers is configured, for example, to have two load / unload chambers (vacuum chambers) formed adjacent to each other and a plurality of processing chambers (vacuum chambers). For example, one of the load / unload chambers 2, 2a is a load chamber for loading the glass substrate 11 from the outside into the sputtering apparatus 1 (vacuum processing apparatus). The other of the load / unload chambers 2, 2a is an unload chamber for unloading the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Also, in the film formation chamber 4 and the film formation chamber 4A, a configuration in which different film formation processes are performed may be adopted.

[0040] A partition valve may be formed between each of these vacuum chambers 2, 2a, 4, 4A and the transfer chamber 3.

[0041] In the load / unload chamber 2, a positioning member may be arranged that can set the placement position of the glass substrate 11 carried in from the outside to the inside of the sputtering apparatus 1 and can perform alignment. Further, in the load / unload chamber 2, a rough evacuation device (rough evacuation device, low-vacuum evacuation device) such as a rotary pump for roughly evacuating the inside of the load / unload chamber 2 is provided.

[0042] As shown in FIG. 1, a transfer device 3a (transfer robot) is arranged inside the transfer chamber 3. In the following description, it may be referred to as the transfer robot 3a. The transfer device 3a includes a rotating shaft, a robot arm attached to this rotating shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for moving the robot hand up and down. The robot arm is composed of a first active arm, a second active arm, a first driven arm, and a second driven arm that can be bent relative to each other. The transfer device 3a can move the glass substrate 11, which is an object to be transferred, between each of the vacuum chambers 2, 2a, 4, 4A and the transfer chamber 3.

[0043] As shown in FIG. 1, in the film formation chamber 4, a cathode device 10, a substrate holding portion 13 that is a substrate holder having a mask or the like, a gas introduction device, and a high-vacuum evacuation device are provided. As shown in FIG. 1, the inside of the film formation chamber 4 is composed of a front space 41 where the surface of the glass substrate 11 is exposed during film formation and a back space 42 located on the back side of the glass substrate 11. The cathode device 10 is arranged in the front space 41.

[0044] The cathode device 10 is erected at the position farthest from the transfer port 4a connected to the transfer chamber 3 inside the film formation chamber 4. The substrate holding portion 13 (substrate holding device) is provided inside the back space 42 as shown in FIG. 1. The substrate holding portion 13 can support the glass substrate 11 carried in from the transfer port 4a.

[0045] The substrate holding part 13 holds the glass substrate 11 so that the target 23, which will be described later, and the surface to be processed 11a (film formation surface) of the glass substrate 11 face each other during film formation. During film formation, the substrate holding part 13 holds the glass substrate 11 at a position corresponding to the film formation port 4b.

[0046] The substrate holding part 13 may include a swing shaft and a holding part. The swing shaft extends substantially parallel to at least one of the transfer port 4a and the film formation port 4b, for example, at a lower position in the back space 42. The holding part is attached to the swing shaft and holds the back surface of the glass substrate 11. The gas introduction device introduces gas into the inside of the film formation chamber 4. The high vacuum evacuation device is a turbo molecular pump or the like that decompresses the inside of the film formation chamber 4 to a high vacuum state.

[0047] <Cathode device 10> FIG. 2 is a perspective view showing the cathode device 10 of the sputtering device 1 according to the present embodiment. FIG. 3 is a schematic diagram showing the positional relationship between the configuration of the glass substrate and the cathode device in the sputtering device according to the present embodiment.

[0048] In FIGS. 2 to 6 and FIGS. 8 to 11, an XYZ orthogonal coordinate system is adopted. The Z direction is the vertical direction (gravity direction). Also, the Z direction is the longitudinal direction of the glass substrate 11. The Y direction is the thickness direction of the glass substrate 11. Also, it is the thickness direction of the yoke. The X direction is the width direction of the glass substrate 11. In the following description, a plane parallel to the Z direction and the X direction may be referred to as the ZX plane. Furthermore, the X direction corresponds to the swing direction. In this case, the Z direction intersecting the X direction corresponds to the intersecting direction intersecting the swing direction. The cathode device 10 can swing the glass substrate 11 arranged at the film formation position (plasma treatment position) inside the film formation chamber 4 in the X direction.

[0049] The cathode device 10 has a cathode box 10A and one cathode unit 22. The cathode unit 22 is arranged in the cathode box 10A as shown in FIG. 2. In FIG. 2, a vertical cathode device 10 with the glass substrate 11 and the target 23 standing vertically is shown. As the cathode device 10, a down deposition type cathode device can also be used. In the down deposition type cathode device, the glass substrate 11 is disposed below the target 23 so that the glass substrate 11 faces in the horizontal direction. In this state, film formation is performed on the glass substrate 11. Here, the horizontal direction is a direction parallel to the X direction and the Y direction.

[0050] <Cathode unit 22> As shown in FIG. 3, the cathode unit 22 is disposed along the ZX plane facing the surface of the glass substrate 11. The cathode unit 22 is configured to emit sputter particles toward the surface 11a to be processed of the glass substrate 11. In the cathode unit 22, in the direction from the glass substrate 11 toward the magnet scanning unit 29 (the direction opposite to the Y direction shown in FIG. 3), the target 23, the backing plate 24, and the magnet unit MU (magnetic circuit) are arranged in this order. The magnet scanning unit 29 will be described later.

[0051] <Target 23> FIG. 4 is a front view showing the positional relationship among the glass substrate, the target, and the magnet unit in the sputtering apparatus according to the present embodiment. The target 23 is formed in a flat plate shape parallel to the ZX plane facing the glass substrate 11. The target 23 is disposed to face the glass substrate 11. In other words, the target 23 has a surface 23a facing the glass substrate 11 as shown in FIG. 3. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box 10A as shown in FIG. 2. As shown in FIGS. 3 and 4, the target 23 has a width greater than that of the glass substrate 11 in the Z direction. Further, the target 23 has a width greater than that of the glass substrate 11 in the X direction. An anode 28 is provided around the target 23. The anode 28 covers a backing plate 24 that protrudes outside the ends of the target 23 in each of the X and Z directions. In other words, in the Y direction, the anode 28 is disposed between the glass substrate 11 and the backing plate 24. The anode 28 is disposed around the entire circumference of the target 23 in the X and Z directions.

[0052] <backing plate 24> The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11. The backing plate 24 is joined to the surface of the target 23 that does not face the glass substrate 11, that is, the surface opposite to the surface 23a of the target 23. A control unit 26 having a DC power source is connected to the backing plate 24. The DC power supplied from the DC power source is supplied to the target 23 through the backing plate 24. As the power source for the cathode, a DC power source, a pulse power source, or an RF power source may be used instead of the DC power source. The cathode unit 22 has the target 23 disposed along the ZX plane facing the surface 11a to be processed of the glass substrate 11.

[0053] <magnet unit MU> The cathode unit 22 has a magnet unit MU. The magnet unit MU is composed of a plurality of magnets 25 and two auxiliary magnets 27. The magnet unit MU is disposed on the side opposite to the target 23 with respect to the backing plate 24. In other words, the glass substrate 11 is disposed on the surface side of the target 23, and the magnet unit MU is disposed on the back side of the target 23.

[0054] The magnet unit MU is a multi-pole magnet. In the magnet unit MU, a plurality of magnets 25 are arranged parallel to each other and are equally spaced in the X direction. The plurality of magnets 25 are erected in the Z direction so that the longitudinal direction of each of the plurality of magnets 25 is parallel to the Z direction. In the magnet unit MU according to the present embodiment, for example, nine magnets 25 are arranged in the X direction. Specifically, the magnet unit MU includes a first magnet 25F, a second magnet 25S, a third magnet 25T, a fourth magnet 25Y, a fifth magnet 25G, a sixth magnet 25R, a seventh magnet 25V, an eighth magnet 25E, and a ninth magnet 25N. In the present embodiment, the number of magnets 25 is nine. The number of magnets 25 can be set according to, for example, the area of the glass substrate 11, the area of the target 23, or the swing region of the magnet 25 described later. In other words, the magnet unit MU includes N magnets 25 (N is an integer of 2 or more). In this case, the magnets to which the auxiliary magnet 27 is attached among the plurality of magnets 25 are the (N - 1)-th magnet and the N-th magnet. In the cathode unit 22 in the present embodiment, the target 23 is fixed to the glass substrate 11. The cathode unit 22 is fixed to the film formation chamber 4.

[0055] Each of the nine magnets 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. Each of the nine magnets 25 is individually connected to the control unit 26. The control unit 26 can control the magnetic field state generated in each of the nine magnets 25.

[0056] <Magnetic field generation regions MG1, MG2, MG3> Each of the nine magnets 25 has three magnetic field generation regions arranged in the Z direction, namely, a first magnetic field generation region MG1, a plurality of second magnetic field generation regions MG2, and a third magnetic field generation region MG3. The first magnetic field generation region MG1 is one region in the Z direction. The third magnetic field generation region MG3 is the other region in the Z direction. The plurality of second magnetic field generation regions MG2 are regions between the first magnetic field generation region MG1 and the third magnetic field generation region MG3. In the present embodiment, the number of the plurality of second magnetic field generation regions MG2 is five. The number of the plurality of second magnetic field generation regions MG2 is not limited to the present embodiment and may be less than five or six or more. Such a plurality of magnetic field generation regions MG1, MG2, MG3 may be continuously connected in the Z direction or may be divided in the Z direction. In the present embodiment, the structure in the case where the plurality of magnetic field generation regions MG1, MG2, MG3 are connected will be described.

[0057] FIG. 5 is an enlarged front view showing an end portion of a magnet unit MU of a sputtering apparatus according to the present embodiment. FIG. 6 is an enlarged cross-sectional view showing an end portion of a magnet unit MU of a sputtering apparatus according to the present embodiment. Further, each of FIGS. 5 and 6 shows the configuration of a magnet and an auxiliary magnet constituting the magnet unit MU. In FIG. 5, a first magnet 25F, a second magnet 25S, and an auxiliary magnet 27 are shown. In FIG. 5, the first magnet 25F and the auxiliary magnet 27 are shown. FIG. 5 shows the first magnetic field generation region MG1 shown in FIG. 4 and a part of the second magnetic field generation region MG2. In the following description, the auxiliary magnet provided on the first magnet 25F will be described, and the description of the auxiliary magnet provided on the ninth magnet 25N may be omitted. When describing the structure common to the first magnet 25F to the ninth magnet 25N, the first magnet 25F to the ninth magnet 25N may be simply referred to as the magnet 25.

[0058] Each of the first magnet 25F to the ninth magnet 25N has a yoke 31, an auxiliary yoke 31d, a peripheral magnet portion 32, and a central magnet portion 33, as shown in FIGS. 4 to 6.

[0059] <The yoke 31 and the auxiliary yoke 31d> The yoke 31 is a magnet base (magnetic material) having a substantially rectangular flat plate shape when viewed in the Y direction. The yoke 31 has a central region 31C on the surface 31S of the yoke 31. The auxiliary yoke 31d is a portion adjacent to the yoke 31. The auxiliary yoke 31d is made of a magnetic material or a dielectric. Each of the plurality of magnets 25 constituting the magnet unit MU is arranged on the yoke 31.

[0060] <The peripheral magnet portion 32 and the central magnet portion 33> The peripheral magnet portion 32 is separated from the central magnet portion 33 in the plane of the yoke 31. The peripheral magnet portion 32 is a substantially oval ring magnet provided so as to surround the central magnet portion 33. The central magnet portion 33 is a composite magnet body having a linear shape. The longitudinal direction of the composite magnet body corresponds to the Z direction. The central magnet portion 33 is arranged at the central position 31CP in the X direction of the central region 31C of the yoke 31.

[0061] The central magnet portion 33 and the peripheral magnet portion 32 constitute a magnetic circuit formed on the surface 31S of the yoke 31. This magnetic circuit is arranged so as to overlap the backing plate 24. In the central portion MP in the Z direction, which is the longitudinal direction of the magnet 25, the central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other. The region where the central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other is the parallel region PR.

[0062] The central magnet portion 33 is divided into a plurality of magnets in the Z direction in which the central magnet portion 33 extends. In other words, the central magnet portion 33 is composed of a plurality of divided magnets. The central magnet portion 33 is formed by arranging the plurality of divided magnets continuously in the Z direction. Similarly, the peripheral magnet portion 32 is divided into a plurality of magnets in the Z direction in which the peripheral magnet portion 32 extends. In other words, the peripheral magnet portion 32 is composed of a plurality of divided magnets. The peripheral magnet portion 32 is formed by continuously arranging the plurality of divided magnets in the Z direction. Furthermore, as shown in FIGS. 5 and 6, the peripheral magnet portion 32 has an end peripheral magnet portion 32a located at the end in the Z direction. The end peripheral magnet portion 32a extends in the X direction. Also, the peripheral magnet portion 32 has a first peripheral magnet portion 32b. The first peripheral magnet portion 32b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first peripheral magnet portion 32b extends in the Z direction which is the longitudinal direction. The end peripheral magnet portion 32a may have a portion extending in the Z direction at a position adjacent to the first peripheral magnet portion 32b. In other words, as shown in FIG. 5, at one end of the magnet 25 in the Z direction, the end peripheral magnet portion 32a may have a substantially C-shaped configuration. Also, at the other end of the magnet 25 in the Z direction, the end peripheral magnet portion 32a may have a substantially reverse C-shaped configuration.

[0063] The peripheral magnet portion 32 has a second peripheral magnet portion 32c extending in the Z direction. The second peripheral magnet portion 32c is adjacent to the first peripheral magnet portion 32b in the longitudinal direction. The second peripheral magnet portion 32c is located on the side opposite to the end peripheral magnet portion 32a with respect to the first peripheral magnet portion 32b in the Z direction. The peripheral magnet portion 32 has a third peripheral magnet portion 32d extending in the Z direction. The third peripheral magnet portion 32d is adjacent to the second peripheral magnet portion 32c in the longitudinal direction. The third peripheral magnet portion 32d is located on the side opposite to the first peripheral magnet portion 32b with respect to the second peripheral magnet portion 32c in the Z direction. The peripheral magnet portion 32 has a fourth peripheral magnet portion 32e extending in the Z direction. The fourth peripheral magnet portion 32e is adjacent to the third peripheral magnet portion 32d in the longitudinal direction. The fourth peripheral magnet portion 32e is located on the side opposite to the second peripheral magnet portion 32c with respect to the third peripheral magnet portion 32d in the Z direction. The peripheral magnet portion 32 has a fifth peripheral magnet portion 32f extending in the Z direction. The fifth peripheral magnet portion 32f is adjacent to the fourth peripheral magnet portion 32e in the longitudinal direction. The fifth peripheral magnet portion 32f is located on the opposite side of the third peripheral magnet portion 32d with respect to the fourth peripheral magnet portion 32e in the Z direction.

[0064] Furthermore, the peripheral magnet portion 32 has a split portion (see FIG. 4) extending in the Z direction. The split portion is adjacent to the fifth peripheral magnet portion 32f. The split portion of the peripheral magnet portion 32 is located in the parallel region PR. In the peripheral magnet portion 32, each of the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e is a permanent magnet. In the peripheral magnet portion 32, each of the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e may be configured to independently generate different magnetic fields, or may be configured to generate magnetic fields of equal strength. In the peripheral magnet portion 32, the fifth peripheral magnet portion 32f and the split portion further extending in the Z direction from the fifth peripheral magnet portion 32f are permanent magnets.

[0065] As shown in FIGS. 5 and 6, the central magnet portion 33 has a first coil portion 35b. The first coil portion 35b is located at an end in the Z direction which is the longitudinal direction. The first coil portion 35b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first coil portion 35b is composed of a coil wire wound around an axis parallel to the Y direction which is perpendicular to the plane of the paper in FIG. 5. Specifically, the first coil portion 35b has a first core portion 34b parallel to the Y direction and is composed of a coil wire wound around the first core portion 34b. The first core portion 34b is located at the center of the coil. The first core portion 34b is a permanent magnet. The first coil portion 35b is arranged at a position that coincides with the first peripheral magnet portion 32b in the Z direction. The center of the first core portion 34b is arranged at a position substantially the same as the central position of the first peripheral magnet portion 32b in the Z direction. The first coil portion 35b does not contact the end peripheral magnet portion 32a and the first peripheral magnet portion 32b.

[0066] The central magnet portion 33 has a second coil portion 35c adjacent to the first coil portion 35b. The second coil portion 35c is located on the opposite side of the end peripheral magnet portion 32a with respect to the first coil portion 35b in the Z direction. The second coil portion 35c has a second core portion 34c located at the center of the second coil portion 35c. The second core portion 34c is a permanent magnet. The second coil portion 35c is disposed at a position that coincides with the second peripheral magnet portion 32c in the Z direction. The center of the second core portion 34c is disposed at a position substantially the same as the central position of the second peripheral magnet portion 32c in the Z direction. The second coil portion 35c does not contact the first coil portion 35b and the second peripheral magnet portion 32c.

[0067] The central magnet portion 33 has a third coil portion 35d adjacent to the second coil portion 35c. The third coil portion 35d is located on the opposite side of the second coil portion 35c with respect to the first coil portion 35b in the Z direction. The third coil portion 35d has a third core portion 34d located at the center of the third coil portion 35d. The third core portion 34d is a permanent magnet. The third coil portion 35d is disposed at a position that coincides with the third peripheral magnet portion 32d in the Z direction. The center of the third core portion 34d is disposed at a position substantially the same as the central position of the third peripheral magnet portion 32d in the Z direction. The third coil portion 35d does not contact the second coil portion 35c and the third peripheral magnet portion 32d.

[0068] The central magnet portion 33 has a fourth coil portion 35e adjacent to the third coil portion 35d. The fourth coil portion 35e is located on the opposite side of the third coil portion 35d with respect to the second coil portion 35c in the Z direction. The fourth coil portion 35e has a fourth core portion 34e located at the center of the fourth coil portion 35e. The fourth core portion 34e is a permanent magnet. The fourth coil portion 35e is disposed at a position that coincides with the fourth peripheral magnet portion 32e in the Z direction. The center of the fourth core portion 34e is disposed at a position substantially the same as the central position of the fourth peripheral magnet portion 32e in the Z direction. The fourth coil portion 35e does not contact the third coil portion 35d and the fourth peripheral magnet portion 32e.

[0069] The central magnet portion 33 has a fifth magnet portion 37 adjacent to the fourth coil portion 35e. The fifth magnet portion 37 is located on the opposite side of the fourth coil portion 35e from the third coil portion 35d in the Z direction. The fifth magnet portion 37 is a permanent magnet. The fifth magnet portion 37 is disposed at a position that coincides with the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is disposed substantially parallel to the fifth peripheral magnet portion 32f. As shown in FIG. 5, the fifth magnet portion 37 is disposed at substantially the same position as the first core portion 34b to the fourth core portion 34e in the X direction. In other words, the first core portion 34b to the fourth core portion 34e and the fifth magnet portion 37 are arranged side by side in the Z direction. The fifth magnet portion 37 has substantially the same length as the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 does not contact the fourth coil portion 35e and the fifth peripheral magnet portion 32f.

[0070] Furthermore, the central magnet portion 33 has a split portion extending in the Z direction. The split portion is adjacent to the fifth magnet portion 37. The split portion of the central magnet portion 33 is located in the parallel region PR. In the central magnet portion 33, each of the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e is connected to a control portion 26 (see FIG. 3) having a power supply function. That is, the control portion 26 functions as a power source. In the central magnet portion 33, current is independently supplied to each of the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e. Thereby, the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e can generate different magnetic fields from each other.

[0071] Furthermore, the central magnet portion 33 has a long core portion 36 extending in the Z direction. In the central magnet portion 33, each of the first core portion 34b, the second core portion 34c, the third core portion 34d, and the fourth core portion 34e has an end portion located on the side opposite to the yoke 31 in the Y direction. These four end portions are adjacent to the long core portion 36. The long core portion 36 is disposed at substantially the same X-direction position as the fifth magnet portion 37. In other words, the long core portion 36 and the fifth magnet portion 37 are arranged side by side in the Z direction. The long core portion 36 is a permanent magnet or a magnetic material. In the central magnet portion 33, the long core portion 36 forms a magnetic circuit with the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e of the peripheral magnet portion 32. In the central magnet portion 33, each of the first coil portion 35b to the fourth coil portion 35e is configured to be independently supplied with current. Thereby, it is possible to adjust the magnetic field strength and the distribution of the generated magnetic field in the magnetic circuit formed by the long core portion 36 and the peripheral magnet portion 32.

[0072] In the above-described example, the first coil portion 35b to the fourth coil portion 35e that constitute the central magnet portion 33 are electromagnets, but the configuration of the central magnet portion 33 is not limited to electromagnets. As the central magnet portion 33, a permanent magnet corresponding to the long core portion 36 can also be used. FIG. 5 shows one end of the magnet 25 in the Z direction, but at the other end of the magnet 25, a configuration equivalent to that of one end of the magnet 25 described above may be adopted.

[0073] <Magnet scanning unit 29> The cathode device 10 includes a magnet scanning unit 29. The magnet scanning unit 29 moves the magnet unit MU in a swinging direction which is one scanning direction. The swinging direction is the X direction orthogonal to the Z direction in which a plurality of magnet units MU are erected. That is, the magnet scanning unit 29 can relatively reciprocally move the magnet unit MU and the glass substrate 11. The magnet scanning unit 29 changes the position of the magnet unit MU with respect to the target 23. The magnet scanning unit 29 can swing the magnet unit MU without changing the relative positional relationship of the plurality of magnets 25 that make up the magnet unit MU. That is, the magnet unit MU can be moved (swung) parallel to the particle emission surface of the target 23 by the magnet scanning unit 29 with respect to the target 23.

[0074] The magnet scanning unit 29 is composed of, for example, a rail, a roller, a plurality of motors, etc. The rail extends in the scanning direction. The roller is attached to each of the two ends in the X direction of the cathode unit 22. The motor rotates each roller. The magnet scanning unit 29 may be composed of an LM guide or the like having a rail extending in the scanning direction. The rail of the magnet scanning unit 29 has a width equal to or larger than that of the target 23 in the scanning direction (X direction). Note that the configuration of the magnet scanning unit 29 is not limited to the above-described configuration as long as the magnet scanning unit 29 can move a plurality of magnets 25 integrally in the scanning direction. Configurations other than those having a rail, a roller, and a motor may be applied to the magnet scanning unit 29.

[0075] <Auxiliary magnet 27> As shown in FIG. 4, the two auxiliary magnets 27 are arranged at both ends of the magnet unit MU in the X direction. In other words, one auxiliary magnet 27 (first auxiliary magnet) is arranged at one end (first end) of the magnet unit MU in the X direction. The other auxiliary magnet 27 (second auxiliary magnet) is arranged at the other end (second end) of the magnet unit MU in the X direction. The auxiliary magnet 27 is arranged on the opposite side of the glass substrate 11 with respect to the target 23. The auxiliary magnet 27 is attached and fixed to the yoke 31 that forms a magnetic circuit in each of the first magnet 25F and the ninth magnet 25N.

[0076] In this embodiment, the magnet unit MU is composed of an array of nine magnets 25. A first magnet 25F is arranged at one end side (the first end side, the first array end) of the magnet unit MU in the X direction. A ninth magnet 25N is arranged at the other end side (the second end side, the second array end) of the magnet unit MU in the X direction. In this configuration, one of the auxiliary magnets 27 is provided at the end (outer edge) of the first magnet 25F on the side opposite to the second magnet 25S in the X direction. The other auxiliary magnet 27 is provided at the end (outer edge) of the ninth magnet 25N on the side opposite to the eighth magnet 25E in the X direction. In other words, one of the auxiliary magnets 27 is located at the swing end, which is one end of the magnet unit MU in the X direction. The other auxiliary magnet 27 is located at the swing end, which is the other end of the magnet unit MU in the X direction. That is, the auxiliary magnets 27 are arranged at the outer edges of the magnets located at the first swing end and the second swing end in the magnet unit MU at the end in the X direction.

[0077] That is, the auxiliary magnet 27 has a function of tilting the magnetic field lines formed by the magnet 25 located at the first swing end toward the second swing end along the magnet 25 located at the first swing end among the plurality of magnets 25. The auxiliary magnet 27 is arranged on the side opposite to the second swing end with respect to the first swing end along the magnet 27 located at the first swing end.

[0078] As shown in FIGS. 4 to 6, the auxiliary magnet 27 is a linear magnet parallel to the peripheral magnet portion 32. The auxiliary magnet 27 extends in the Z direction. The auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32 closest to the auxiliary magnet 27. That is, as shown in FIG. 6, if the peripheral magnet portion 32 is an N pole, the auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32, that is, an N pole. The auxiliary magnet 27 is located at the outermost positions at both ends of the magnet unit MU in the X direction. That is, the auxiliary magnet 27 is provided so as to be adjacent to the outermost peripheral magnet portion 32 of the first magnet 25F in the X direction. Also, the auxiliary magnet 27 is provided so as to be adjacent to the outermost peripheral magnet portion 32 of the ninth magnet 25N in the X direction. In other words, the auxiliary magnet 27 is not provided on the second magnet 25S to the eighth magnet 25E. That is, the auxiliary magnet 27 is provided only at positions corresponding to the ends of the target 23 in the X direction.

[0079] The auxiliary magnet 27 has the same length as the peripheral magnet portion 32 closest to the auxiliary magnet 27. That is, the dimension of the auxiliary magnet 27 in the Z direction is approximately equal to the dimension of each of the first magnet 25F and the ninth magnet 25N located at both ends of the magnet unit MU in the X direction in the Z direction. Here, the dimension of the auxiliary magnet 27 in the Z direction is about plus or minus 5 mm with respect to the dimension of each of the first magnet 25F and the ninth magnet 25N in the Z direction.

[0080] The auxiliary magnet 27 is a magnet having a rectangular shape in a cross-sectional view, similar to the peripheral magnet portion 32 closest to the auxiliary magnet 27. The auxiliary magnet 27 has the same cross-sectional shape as the peripheral magnet portion 32 over the entire length in the Z direction. The auxiliary magnet 27 is extremely close to the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction. Specifically, as shown in FIG. 6, the auxiliary magnet 27 is extremely close to and in contact with the peripheral magnet portion 32 closest to the auxiliary magnet 27 in the X direction, or can be separated by a predetermined distance in the X direction as described later.

[0081] The auxiliary magnet 27 has a protrusion 27a. In the present embodiment, the protrusion 27a is a portion where convex portions protruding toward the target 23 are continuous in the Z direction with respect to the ZX plane formed by the end face 30 (magnetic pole plane) of the peripheral magnet portion 32 of the magnet 25. In other words, the protrusion 27a extends in the Z direction and protrudes from the ZX plane toward the Y direction. In the following description, the end face 30 may be referred to as the magnetic pole plane 30.

[0082] Note that the tip of the protrusion 27a may protrude toward the target 23 more than the magnetic pole plane 30. The tip of the protrusion 27a may be at the same position as the magnetic pole plane 30 in the Y direction. The tip of the protrusion 27a may be separated from the target 23 more than the magnetic pole plane 30.

[0083] The auxiliary magnet 27 is inclined with respect to the magnetic pole plane 30. That is, as shown in FIG. 6, the end face serving as the magnetic pole of the auxiliary magnet 27 may be inclined by an angle θ with respect to the ZX plane. Here, the angle θ is an angle inclined with respect to the Y direction which is the normal line of the surface 23a of the target 23. In other words, the auxiliary magnet 27 is rotated by an angle θ around an axis parallel to the Z direction. This angle θ can also be referred to as the "magnet inclination angle".

[0084] The "magnet inclination angle" will be described more specifically. The auxiliary magnet 27 has a first magnetic pole face 27F and a second magnetic pole face 27S located on the side opposite to the first magnetic pole face 27F. The first magnetic pole face 27F faces the backing plate 24. In other words, the first magnetic pole face 27F is exposed in the space SP between the backing plate 24 and the magnet 25. The second magnetic pole face 27S is a face that contacts an auxiliary yoke 31d described later. The central position of the first magnetic pole face 27F, that is, the central position between the first corner C1 and the second corner C2 is indicated by reference numeral 27Q. The central position of the second magnetic pole face 27S, that is, the central position between the third corner C3 and the fourth corner C4 is indicated by reference numeral 27R. In the auxiliary magnet 27, a line that is perpendicular to the first magnetic pole surface 27F and the second magnetic pole surface 27S and passes through the central positions 27Q and 27R is the magnet inclination line 27D. In other words, a line that passes through the central position 27R and is perpendicular to the second magnetic pole surface 27S is the magnet inclination line 27D. The angle θ between the magnet inclination line 27D and the Y direction, which is the normal line of the surface 23a of the target 23, is the magnet inclination angle. The magnet inclination line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F faces the swing region SW of the magnet 25. The angle θ is within the range of 0 deg to 90 deg, more preferably within the range of 0 deg to 60 deg, further within the range of 0 deg to 45 deg, and within the range of 0 deg to 30 deg.

[0085] <Modification example of the auxiliary magnet 27> FIG. 27 shows a modification example of the auxiliary magnet 27. The auxiliary magnet 27 shown in FIG. 27 has a pentagonal shape in a cross-sectional view. The auxiliary magnet 27 has a first magnetic pole surface 27F having a vertex and a second magnetic pole surface 27S. The first magnetic pole surface 27F has two surfaces. The vertex connecting the two surfaces corresponds to the central position 27Q. The second magnetic pole surface 27S has a central position 27R. A ridge 27a is formed at the central position 27Q of the first magnetic pole surface 27F of the auxiliary magnet 27. The ridge 27a has a convex shape. In the auxiliary magnet 27 shown in FIG. 27, a line that is perpendicular to the second magnetic pole surface 27S and passes through the central positions 27Q and 27R is the magnet inclination line 27D. The angle θ between the magnet inclination line 27D and the Y direction, which is the normal line of the surface 23a of the target 23, is the magnet inclination angle. The magnet inclination line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F faces the swing region SW of the magnet 25.

[0086] The magnetic strength of the auxiliary magnet 27 is equal to or less than the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. Specifically, the magnetic strength of the auxiliary magnet 27 can be in the range of 1 / 2 to 3 / 4, or 1 / 2 to 1 / 3 of the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. The magnetic strength of the peripheral magnet portion 32 can be 1 to 1.5 times, or 1.1 to 1.4 times, for example, about 1.39 times the magnetic strength of the auxiliary magnet 27.

[0087] As shown in FIG. 6, the auxiliary magnet 27 is fixed to the yoke 31 via the auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the end portion of the yoke 31 in the X direction. The auxiliary yoke 31d may be formed integrally with the yoke 31. In this case, the auxiliary yoke 31d is formed of the same material as the yoke 31. The auxiliary yoke 31d is made of a magnetic material or a dielectric. The auxiliary yoke 31d and the auxiliary magnet 27 are removable from the yoke 31. The auxiliary magnet 27 is fixed to the auxiliary yoke 31d by a fixing member 27g so that the above-described predetermined angle θ is obtained. Thereby, the second magnetic pole surface 27S of the auxiliary magnet 27 is in contact with the auxiliary yoke 31d. Thereby, a magnetic circuit is obtained in which the magnetic circuit formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31 and the magnetic circuit formed by the auxiliary magnet 27 and the auxiliary yoke 31d are combined.

[0088] In the cathode unit 22 of the present embodiment, as shown in FIGS. 3 and 4, sputtered particles are emitted from the target to form a film on the glass substrate 11. At this time, the magnet scanning unit 29 reciprocates the magnet unit MU between the swing end Revers and the swing end Forward. Here, in the present embodiment, the swing end Forward is an example of the “first swing end”. The swing end Revers is an example of the “second swing end”. Note that when the swing end Forward is the “second swing end”, the swing end Revers becomes the “first swing end”.

[0089] In the cathode unit 22, the magnet scanning unit 29 moves the magnet unit MU, which is a multi-connected magnet composed of a plurality of magnets 25, as a whole. Specifically, as shown in FIG. 3, the magnet scanning unit 29 first moves the magnet unit MU from the central position center in the swinging direction (X direction) to the swinging end Forward to the right. Then, the magnet scanning unit 29 moves the magnet unit MU from the swinging end Forward to the left through the central position center to the swinging end Revers. Then, the magnet scanning unit 29 moves the magnet unit MU from the swinging end Revers to the central position center. One scan is completed by such a series of movement operations. In the cathode unit 22, this scan is repeated a plurality of times.

[0090] At the same time, in each of the first magnet 25F to the ninth magnet 25N constituting the magnet unit MU, a current is applied from the control unit 26 that functions as a power source to the first coil unit 35b, the second coil unit 35c, the third coil unit 35d, and the fourth coil unit 35e of the central magnet unit 33 at the end in the Z direction. Thereby, the magnet 25 forms a magnetic field. At this time, a magnetic circuit is formed by the central magnet unit 33, the peripheral magnet unit 32, and the yoke 31. Further, in the first magnet 25F and the ninth magnet 25N, a magnetic circuit is also formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

[0091] Next, in the sputtering apparatus 1 according to the present embodiment, film formation on the glass substrate 11 will be described.

[0092] First, the glass substrate 11 is carried into the sputtering apparatus 1 from the outside. Next, the glass substrate 11 is placed on the positioning member in the load / unload chamber 2. Thereby, the glass substrate 11 is aligned so as to be disposed at a predetermined position on the positioning member (see FIG. 1).

[0093] Next, the glass substrate 11 placed on the positioning member of the load / unload chamber 2 is supported by the robot hand of the transfer device 3a. The glass substrate 11 is taken out from the load / unload chamber 2. Then, the glass substrate 11 is transferred to the film forming chamber 4 via the transfer chamber 3.

[0094] At this time, in the film forming chamber 4, the swing shaft of the substrate holding portion 13 is rotated by the driving portion, and the substrate holding portion 13 is arranged at the horizontal placement position. Further, by a lift pin moving portion (not shown), the lift pin is arranged at a preparation position protruding upward from the substrate holding portion 13. In this state, the glass substrate 11 that has reached the film forming chamber 4 is inserted above the substrate holding portion 13 by the transfer device 3a.

[0095] Next, as the robot hand of the transfer device 3a approaches the substrate holding portion 13, the glass substrate 11 is placed on the lift pin in a state where the glass substrate 11 is aligned at a predetermined in-plane position of the substrate holding portion 13. Then, the arm of the transfer robot 3a retreats to the transfer chamber 3. Then, the lift pin descends, and the glass substrate 11 is supported on the substrate holding portion 13.

[0096] Next, by rotating the swing shaft, in a state where the glass substrate 11 is held by the substrate holding portion 13, the glass substrate 11 rises so as to reach the vertical processing position. As a result, the film forming port 4b is substantially closed by the glass substrate 11, and the glass substrate 11 is held at the film forming position. In this state, a plasma is generated between the surface 23a of the target 23 and the glass substrate 11 by the magnetic field generated by the magnet unit MU. The target 23 is sputtered, and the material constituting the target 23 adheres to the surface of the glass substrate 11. Thereby, a film forming process is performed on the glass substrate 11.

[0097] When the film forming process is completed, by rotating the swing shaft, in a state where the glass substrate 11 is held by the substrate holding portion 13, the glass substrate 11 reaches the horizontal placement position. The glass substrate 11 on which the film formation process has been completed is taken out of the film formation chamber 4 by the transfer device 3a. Then, the glass substrate 11 is taken out from the load / unload chamber 2 via the transfer chamber 3.

[0098] Hereinafter, the operation of the auxiliary magnet 27 in the present embodiment will be described. FIG. 7 is a schematic diagram of the target surface for explaining the operation of the auxiliary magnet 27. FIG. 8 is a diagram for explaining the operation of the auxiliary magnet 27 and is a schematic diagram showing the electron tracking state when the auxiliary magnet 27 is not present. FIG. 9 is a diagram for explaining the operation of the auxiliary magnet 27 and is a schematic diagram showing the direction of the magnetic field lines when the auxiliary magnet 27 is not present. First, the case where the auxiliary magnet 27 is not present will be described.

[0099] As described above, a plasma is generated between the surface 23a of the target 23 and the glass substrate 11 by the magnetic field formed by the magnet unit MU having the plurality of magnets 25. In this state, film formation is performed on the surface of the glass substrate 11 by setting sputtering conditions to be described later.

[0100] Here, during sputtering, as shown in FIG. 9, magnetic field lines are formed from the peripheral magnet portion 32 of the N pole to the central magnet portion 33 of the S pole. A magnetic circuit is formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31. As a result, as shown in FIG. 8, electrons are tracked along the magnetic field lines.

[0101] At this time, at the position that becomes the swing end in the swing region SW of the target 23, as shown in FIG. 9, the magnetic field lines generated from the peripheral magnet portion 32 of the N pole extend toward the anode 28 close to the magnet 25. On the surface 23a of the target 23, the magnetic field line density decreases. That is, as shown in FIG. 8, the density of the tracked electrons becomes insufficient, and the plasma density becomes insufficient. As a result, as shown in FIG. 7, an erosion region is not formed on the surface 23a of the target 23, and non-erosion regions E1 are formed at both ends in the X direction. In FIG. 9, the magnetic field lines from the peripheral magnet portion 32 of the N pole are inclined leftward in the X direction and directed toward the anode 28 as they go in the Y direction.

[0102] In addition, magnetic field lines are formed from the peripheral magnet portion 32 of the N pole to the central magnet portion 33 of the S pole. Due to these magnetic field lines, electrons orbit around the central magnet portion 33 surrounded by the peripheral magnet portion 32 on the surface 23a of the target 23. At this time, at the end in the longitudinal direction of the magnet 25 in the electron movement direction, that is, in the vicinity of the region where the electrons moving in the Z direction along the central magnet portion 33 bend in the X direction along the end peripheral magnet portion 32a, their moving speed slows down and the density increases.

[0103] As a result, the density decreases at the position where the electrons bend from the end peripheral magnet portion 32a along the peripheral magnet portion 32 from the X direction to the Z direction. As a result, erosion on the surface 23a of the target 23 decreases, and a non-erosion region E2 is formed. This phenomenon occurs because in adjacent magnets 25, the directions of the electrons orbiting around the central magnet portion 33 are reversed and cancel each other out. For this reason, it appears in the two magnets 25 at both ends in the X direction. Moreover, in each of the magnets 25 located at both ends of the magnet unit MU in the X direction, the positions where the non-erosion region E2 is formed are on the opposite sides in the Z direction.

[0104] As a result, when there is no auxiliary magnet 27, as shown in FIG. 7, non-erosion regions E2 are formed at two diagonal positions among the four corners of the target 23. In FIG. 7, non-erosion regions are formed near the lower left and upper right corners. Also, when the non-erosion regions E1 and E2 are formed in this way, a non-erosion region E3 is likely to be formed in addition to the two diagonal positions. This is because when a non-erosion region is formed, the applied supply power becomes surplus without being consumed for plasma generation. This surplus power is redistributed to regions different from the two diagonal non-erosion regions, or absorbed as an overall voltage (power) fluctuation. Therefore, it is considered that the plasma generation conditions fluctuate like a voltage fluctuation.

[0105] FIG. 10 is a diagram for explaining the operation of the auxiliary magnet 27, and is a schematic diagram showing the electron tracking state when the auxiliary magnet 27 is present. FIG. 11 is a diagram for explaining the operation of the auxiliary magnet 27, and is a schematic diagram showing the direction of magnetic field lines when the auxiliary magnet 27 is present. Next, the case where the auxiliary magnet 27 is present will be described.

[0106] Here, during sputtering, as shown in FIG. 11, magnetic field lines are formed from the peripheral magnet portion 32 of the N pole to the central magnet portion 33 of the S pole. At this time, in addition to the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31, the auxiliary magnet 27 and the auxiliary yoke 31d are also included to form a magnetic circuit. As a result, as shown in FIG. 10, electrons are tracked along the magnetic field lines.

[0107] At this time, at the position that becomes the swing end in the swing region of the target 23, as shown in FIG. 11, the magnetic field lines from the peripheral magnet portion 32 of the N pole are inclined in the Y direction orthogonal to the magnetic pole plane 30, or in the rightward direction in the X direction, so as not to go toward the anode 28 by the magnetic field lines from the auxiliary magnet 27. Then, on the surface 23a of the target 23, the magnetic field line density does not decrease. That is, as shown in FIG. 10, the density of the tracked electrons is sufficiently maintained, and the plasma density is sufficiently maintained. As a result, on the surface 23a of the target 23 shown in FIG. 7, the non-erosion regions E1 formed in each of the magnets 25 located at both ends of the magnet unit MU in the X direction can be suppressed.

[0108] In the structure including the auxiliary magnet 27, a magnetic circuit including the central magnet portion 33, the peripheral magnet portion 32, the yoke 31, the auxiliary magnet 27, and the auxiliary yoke 31d is formed. Therefore, due to the magnetic field lines directed from the N - pole peripheral magnet portion 32 to the S - pole central magnet portion 33, electrons orbit around the periphery of the central magnet portion 33 surrounded by the peripheral magnet portion 32 on the surface 23a of the target 23. At the end in the longitudinal direction of the magnet 25 in the direction of electron movement, the electrons that have moved in the Z - direction along the central magnet portion 33 bend in the X - direction along the end peripheral magnet portion 32a, but the movement speed of the electrons does not slow down, and the density increase is suppressed.

[0109] As a result, at the position where electrons bend from the end peripheral magnet portion 32a along the peripheral magnet portion 32 from the X - direction to the Z - direction, no decrease in density occurs. As a result, in the two magnets 25 located at both ends of the magnet unit MU in the X - direction, the formation of the non - erosion region E2 on the surface 23a of the target 23 is suppressed as shown in FIG. 22. That is, since the auxiliary magnet 27 is adjacent to the two magnets 25 located at both ends of the magnet unit MU in the X - direction, the formation of the diagonal non - erosion regions E2 can be suppressed. Thereby, when the voltage fluctuation is suppressed and the formation of the non - erosion regions E1 and E2 is suppressed, it is possible to suppress the tendency for the non - erosion region E3 to be formed outside the two diagonal locations.

[0110] According to the sputtering apparatus 1 according to the present embodiment, the magnetic field lines generated from the magnet 25 at the swing end of the magnet 25 by the auxiliary magnet 27 are made not to face the anode 28. Thereby, it is possible to reduce the amount of electrons absorbed by the anode 28. That is, the magnetic field lines generated from the magnet 25 can be made in the Y - direction or inclined more to the right in FIG. 10 than the Y - direction, that is, inclined inward of the target contour rather than in the thickness direction of the target. Thereby, the reduction of the non - erosion regions E1, E2, and E3 can be achieved.

[0111] That is, by reducing the occurrence of the non-erosion regions E1, E2, and E3, it becomes possible to suppress the generation of particles. That is, the boundary between the non-erosion region and the erosion region becomes unclear, and the formation of the erosion-non-erosion boundary region that causes particle generation is reduced.

[0112] Furthermore, by suppressing the occurrence of the non-erosion regions E1 to E3, the supply power is not redistributed, partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. are suppressed, and particle generation, variations in film thickness distribution, film quality characteristics distribution, etc. can be suppressed.

[0113] FIG. 12 is a graph showing the relationship between the swinging position of the magnet 25 in the present embodiment and the supply voltage (discharge voltage) from the plasma generation power source. Here, the magnet unit MU having a plurality of magnets 25 is reciprocated (scanned twice). That is, the magnet unit MU starts from the swinging end Forward shown in FIG. 12 and moves to the swinging end Reverse. Next, the magnet unit MU moves in the opposite direction and returns to the swinging end Forward. Furthermore, the magnet unit MU starts from the swinging end Forward and moves to the swinging end Reverse. Next, the magnet unit MU moves in the opposite direction and returns to the swinging end Forward. In FIG. 12, the case where the auxiliary magnet 27 is provided is shown by a solid line, and the case where the auxiliary magnet 27 is not provided is shown by a broken line.

[0114] As shown in FIG. 12, it can be seen that by providing the auxiliary magnet 27, the variation range of the up and down movement of the discharge voltage depending on the swinging position is smaller compared to the case where the auxiliary magnet 27 is not provided. Also, as shown in FIG. 12, it can be seen that by providing the auxiliary magnet 27, the spike variation of the discharge voltage is suppressed compared to the case where the auxiliary magnet 27 is not provided.

[0115] FIG. 13 shows the film thickness distribution of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering apparatus 1 according to the present embodiment. FIG. 14 shows the distribution of the film resistance value (sheet resistance value) Rs of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering apparatus 1 according to the present embodiment.

[0116] As shown in FIG. 13, by providing the auxiliary magnet 27, the film thickness distribution could be confined within a range of ±4.2% as compared with the case where the auxiliary magnet 27 was not provided. As shown in FIG. 14, by providing the auxiliary magnet 27, the distribution of the film resistance value Rs could be confined within a range of ±12.5% as compared with the case where the auxiliary magnet 27 was not provided.

[0117] On the other hand, FIGS. 15 to 20 show the cases where the sputtering film formation conditions were changed under three conditions in the case where the auxiliary magnet 27 was not provided. FIG. 15 shows the film thickness distribution under condition 1. FIG. 16 shows the film resistance value distribution under condition 1. FIG. 17 shows the film thickness distribution under condition 2. FIG. 18 shows the film resistance value distribution under condition 2. FIG. 19 shows the film thickness distribution under condition 3. FIG. 20 shows the film resistance value distribution under condition 3.

[0118] From the results of conditions 1 to 3, it can be seen that there is a trade-off relationship between the film thickness distribution and the film resistance value distribution, and as shown in FIG. 21, it was found that conventionally, a distribution below the inverse proportional line connecting the three conditions could not be achieved. On the other hand, under condition 0 corresponding to FIGS. 13 and 14 using the auxiliary magnet 27, the film thickness distribution and the film resistance value distribution could be simultaneously reduced as compared with the case where the auxiliary magnet 27 was not provided.

[0119] Hereinafter, the arrangement and dimensions of the auxiliary magnet 27 and the magnet 25 will be described.

[0120] As shown in FIG. 6, the arrangement of the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 is set. Here, let the inclination angle between the Y direction and the magnet inclination line 27D be θ. Let the distance between the auxiliary magnet 27 in the X direction and the peripheral magnet portion 32 closest to the auxiliary magnet 27 be Wx. Let the distance between the auxiliary magnet 27 in the Y direction and the magnetic pole plane 30 be Wy.

[0121] Here, the angle θ is the inclination angle of the N pole and S pole of the auxiliary magnet 27 with respect to the axial direction in the Y direction. The direction in which the magnetic force lines formed from the N pole approach the peripheral magnet portion 32 closest to them is defined as the positive direction. In other words, the magnet inclination line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F faces the swing region SW of the magnet 25. The value of the angle θ is changed from 0 deg to 90 deg.

[0122] Also, the distance Wx is the closest distance between the auxiliary magnet 27 and the peripheral magnet portion 32 closest to it in the X direction. When the auxiliary magnet 27 is inclined at an angle θ, it is the distance from the protrusion 27b where the auxiliary magnet 27 protrudes in the X direction to the peripheral magnet portion 32. The distance Wx is changed from 0 mm to 30 mm.

[0123] The distance Wy is the distance in the Y direction between the protrusion 27a where the magnetic pole surface of the N pole of the auxiliary magnet 27 protrudes most toward the target 23 and the magnetic pole plane 30. When the distance Wy is a negative value, it indicates that the protrusion 27a is separated from the magnetic pole plane 30 by a greater distance from the target 23. The distance Wy is changed from 0 mm to 50 mm.

[0124] Figures 23 to 26 show the plasma density at the surface 23a on the periphery of the target 23 close to the anode 28 when the arrangement of the magnet 25 and the auxiliary magnet 27 in the present embodiment is changed. Here, in Figures 23 to 26, symbols '×', '△', '〇', and '◎' are shown. These symbols represent, in this order, that the plasma density is high. That is, the symbol '×' indicates that the plasma density is the lowest. The symbol '◎' indicates that the plasma density is the highest and is equivalent to the plasma density at a position separated from the anode 28. The symbol '〇' indicates that it is about 80% of the plasma density of the symbol '◎'. The symbol '△' indicates that it is 50% or less of the plasma density of the symbol '◎'.

[0125] From the results shown in Figures 23 to 26, it can be seen that the plasma density does not change when the angle θ is 90 deg. Also, it can be seen that the angle θ, the distance Wx, and the distance Wy are not independent parameters from each other. In the angle θ, the distance Wx, and the distance Wy, if an inclination is obtained that presses the magnetic field lines of the closest peripheral magnet portion 32 inside the oscillation region, for example, it can be seen that the preferred range is not set only by the distance Wx.

[0126] Specifically, θ = 0 deg, -10 mm ≤ Wy ≤ 10 mm, 0 mm ≤ Wx ≤ 20 mm, θ = 30 deg, -10 mm ≤ Wy ≤ 10 mm, 0 mm ≤ Wx ≤ 30 mm, θ = 60 deg, 0 mm ≤ Wy ≤ 10 mm, 20 mm ≤ Wx ≤ 30 mm, can be set as the preferred range.

[0127] Furthermore, (θ [deg], Wx [mm], Wy [mm]) can also be (0, 0, -10)(0, 0, 0)(0, 0, 10)(0, 10, 0)(30, 0, -10)(30, 0, 0)(30, 0, 10)(30, 10, 0)(30, 10, 10)(30, 20, 0)(30, 20, 10)(30, 30, 10)(60, 30, 0) the range connecting each point of.

[0128] <Modified Examples of Magnetic Field Generation Regions MG1, MG2, and MG3> In the above-described embodiment, the structure in which the plurality of magnetic field generation regions MG1, MG2, and MG3 constituting each of the nine magnets 25 are continuously connected in the Z direction has been described. In this modified example, a divided structure in which the plurality of magnetic field generation regions MG1, MG2, and MG3 are divided in the Z direction will be described. In the divided structure, for example, the plurality of magnetic field generation regions MG1, MG2, and MG3 may be divided one by one. Alternatively, one unit region may be formed by two, three, or four magnetic field generation regions, and the plurality of unit regions may be divided from each other.

[0129] In each of the second magnet 25S to the eighth magnet 25E, each of the plurality of magnetic field generation regions MG1, MG2, and MG3 has a divided yoke, a divided peripheral magnet portion, and a divided central magnet portion. Furthermore, in each of the first magnet 25F and the ninth magnet 25N, each of the plurality of magnetic field generation regions MG1, MG2, and MG3 has a divided yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet. Here, the divided yoke corresponds to the yoke 31 described above. The divided peripheral magnet portion corresponds to the peripheral magnet portion 32 described above. The divided central magnet portion corresponds to the central magnet portion 33 described above. The divided auxiliary magnet corresponds to the auxiliary magnet 27 described above.

[0130] Regarding each of the nine magnets 25, the positions of each of the plurality of magnetic field generation regions MG1, MG2, and MG3 are adjustable in the Z direction and the Y direction. The magnet 25 having the plurality of magnetic field generation regions MG1, MG2, and MG3 whose positions are adjusted is swingable by the magnet scanning unit 29.

[0131] For controlling the film formation state over the entire film formation region, for example, in the Z direction and the Y direction, the conditions of the magnetic flux density related to plasma generation are adjusted. According to this modification, since the plurality of magnetic field generation regions MG1, MG2, and MG3 are divided, the positions of the plurality of magnetic field generation regions MG1, MG2, and MG3 in the Z direction and the Y direction can be adjusted. Therefore, it is possible to adjust the conditions of the magnetic flux density in each of the plurality of magnetic field generation regions MG1, MG2, and MG3. By adjusting each of the plurality of magnetic field generation regions MG1, MG2, and MG3 in the Z direction and the Y direction, in each of the plurality of magnetic field generation regions, the magnetic field lines of the peripheral magnets in the magnet 25 located at the first swing end can be inclined in the required direction by the split auxiliary magnet. In each of the plurality of magnetic field generation regions MG1, MG2, and MG3, the state in which the magnetic field lines are inclined in the required direction can be maintained.

Example

[0132] Hereinafter, examples according to the present invention will be described.

[0133] Here, a confirmation test performed as a specific example of film formation by sputtering in the present invention will be described. Here, confirmation of the non-eroded region in the target 23, measurement of the film thickness distribution, and measurement of the sheet resistance value distribution were performed.

[0134] <Experimental Example 1> Using the sputtering apparatus 1 having the auxiliary magnet 27 shown in the embodiment, the swing width was set to 82.5 mm from the center. That is, half of the swing distance in the X direction from the swing end Revers to the swing end Forward is 82.5 mm.

[0135] Here, the specifications in film formation are shown. ·Condition 0 Target composition: ITO (Indium Tin Oxide: indium tin oxide) Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film formation thickness: 80 nm Supply power (plasma formation power): 15 kW Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm Atmospheric pressure: 0.2 Pa Film formation time: 53 sec

[0136] Width dimension of the auxiliary magnet 27 in the X direction (width of the magnetic pole surface): 185 mm Angle θ: 30° Wx: 17 mm Wy: 20 mm Auxiliary yoke 31d: SUS430 As a result, as shown in FIGS. 13, 14, and 21, film formation characteristics with a film thickness distribution within 4.2% and a sheet resistance distribution within 12.5% were obtained.

[0137] <Experimental Examples 2 to 4> An ITO film was formed in the same manner without using the auxiliary magnet 27. ·Condition 1 Target composition: ITO Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film formation thickness: 80 nm Supply power (plasma formation power): 30 kW Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm Atmospheric pressure: 0.2 Pa Film formation time: 65 sec

[0138] As a result, as Condition 1, as shown in FIGS. 15, 16, and 21, film formation characteristics with a film thickness distribution of 7.9% and a sheet resistance distribution of 11.5% were obtained.

[0139] ·Condition 2 Target composition: ITO Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film formation thickness: 80 nm Supply power (plasma formation power): 30 kW Bias power: Not used Supply gas and gas flow rate: H2O 0.5 sccm, Ar 120 sccm Atmospheric pressure: 0.5 Pa Film formation time: 74 sec

[0140] As a result, as condition 2, as shown in FIGS. 17, 18, and 21, film formation characteristics with a film thickness distribution of 5.5% and a sheet resistance distribution of 21.3% were obtained.

[0141] ·Condition 3 Target composition: ITO Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm Film composition: ITO Film formation thickness: 80 nm Supply power (plasma formation power): 60 kW Bias power: Not used Supply gas and gas flow rate: H2O 0.5 sccm, Ar 360 sccm Atmospheric pressure: 0.3 Pa Film formation time: 86 sec

[0142] As a result, as condition 3, as shown in FIGS. 19, 20, and 21, film formation characteristics with a film thickness distribution of 4.2% and a sheet resistance distribution of 26.6% were obtained.

[0143] <Experimental Example 5> Sputtering was performed without providing the auxiliary magnet 27, and the target surface was visually observed. Target composition: Aluminum Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm

[0144] As a result, as the dimensions of the non - erosion region E1 shown in FIG. 7, 11 mm, 17 mm, 8 mm, 11 mm, etc. were measured. As the dimensions of the non - erosion region E2 shown in FIG. 7, 19 mm and 20 mm were measured. As the dimensions of the non - erosion region E3 shown in FIG. 7, 10 mm, 5 mm, 8 mm, 10 mm, etc. were measured. At the same time, the boundary region was observed, and its dimension was measured to be 15 mm or the like.

[0145] <Experimental Example 6> Sputtering was performed using the auxiliary magnet 27, and the target surface was visually observed. Target composition: Aluminum Substrate dimensions (X direction × Z direction): 1500 mm × 1800 mm

[0146] Width dimension of the auxiliary magnet 27 in the X direction (width of the magnetic pole surface): 185 mm Angle θ: 30° Wx: 17 mm Wy: 20 mm Auxiliary yoke 31d: SUS430 As a result, as the dimension of the non - erosion region E1 shown in FIG. 22, 22 mm was obtained. However, the boundary region was not observed.

[0147] <Experimental Example 7> Using the auxiliary magnet 27, (θ [deg], Wx [mm], Wy [mm]) were changed as shown in FIGS. 23 to 26, and the plasma density was measured. The results are shown in FIGS. 23 to 26. From this, it was found that, as described above, it is necessary to satisfy a predetermined relationship in terms of the angle θ, the distance Wx, and the distance Wy.

[0148] Furthermore, in Experimental Example 6 using the auxiliary magnet 27, the surface of the target 23 after the sputtering process was confirmed. The image of the corner at this time is shown in FIG. 28. From this result, it can be seen that the boundary of the non - erosion region is clear and not blurred, the plasma has not disappeared on the non - erosion region during the process, and the boundary region has not been observed.

[0149] Similarly, in Experimental Example 5 without using the auxiliary magnet 27, the surface of the target 23 after the sputtering process was confirmed. The image of the corner at this time is shown in FIG. 29. From this result, it can be seen that the boundary of the non - erosion region is blurred, the plasma has disappeared on the non - erosion region during the process, and the boundary region has been observed.

[0150] From these results, it can be seen that by pushing the magnetic field lines away from the anode 28 by the auxiliary magnet 27, the boundary region between the erosion region and the non-erosion region is reduced, enabling particle reduction, and at the same time, it is possible to improve the film thickness distribution and the sheet resistance distribution.

Explanation of Signs

[0151] 1…Sputtering apparatus 4…Film formation chamber (vacuum chamber) 10…Cathode apparatus 10A…Cathode box 11…Glass substrate (substrate to be coated, transparent substrate) 13…Substrate holding part 22…Cathode unit 23…Target 24…Backing plate 25…Magnet (magnetic circuit) 26…Control unit 27…Auxiliary magnet 27a…Ridge 28…Anode 29…Magnet scanning part 31…Yoke 31d…Auxiliary yoke 32…Peripheral magnet part 33…Central magnet part 33a…End magnet part 33b…First coil part 41…Front space 42…Back space MU…Magnet unit (magnetic circuit)

Claims

1. A sputtering apparatus comprising a cathode unit that emits sputtering particles toward a surface to be treated of a substrate to be coated, wherein the cathode unit has a target in which an erosion region is formed, a magnet unit having a plurality of magnets arranged on the side opposite to the substrate to be coated with respect to the target and forming the erosion region in the target, a magnet scanning unit that can relatively reciprocate between a first swing end and a second swing end in a swing direction along the surface to be treated of the substrate to be coated between the magnet unit and the substrate to be coated, an auxiliary magnet that inclines the magnetic field lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end among the plurality of magnets extending in an intersecting direction intersecting the swing direction along the surface to be treated of the substrate to be coated, and has the auxiliary magnet is arranged on the side opposite to the second swing end with respect to the first swing end along the magnet located at the first swing end, the auxiliary magnet can swing integrally with the magnet, the auxiliary magnet has the same polarity as the magnet located at the first swing end, the magnetic strength of the auxiliary magnet is equal to or smaller than the magnetic strength of the magnet located at the first swing end, the auxiliary magnet has a protrusion protruding toward the target along the magnet, a sputtering apparatus.

2. The auxiliary magnet is arranged on the side opposite to the substrate to be coated with respect to the target and is attached and fixed to a yoke forming a magnetic circuit, The sputtering apparatus according to claim 1.

3. The cathode unit has a flat yoke having a central region made of a magnetic material on its surface, an auxiliary yoke adjacent to the yoke, a central magnet portion linearly arranged in the central region of the yoke, a peripheral magnet portion provided so as to surround the central magnet portion, a parallel region where the central magnet portion and the peripheral magnet portion are parallel to each other, a magnetic circuit provided on the surface of the yoke, a backing plate arranged overlapping the magnetic circuit, and has each of the plurality of magnets constituting the magnet unit is arranged on the yoke, the auxiliary magnet is arranged parallel to the peripheral magnet portion, The auxiliary magnet is fixed to the yoke via the auxiliary yoke, The auxiliary yoke is made of a magnetic material or a dielectric, The sputtering apparatus according to claim 1 or claim 2.

4. The auxiliary yoke and the auxiliary magnet are removable from the yoke, The sputtering apparatus according to claim 3.

5. The magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generation regions divided in the crossing direction, Each of the magnetic field generation regions has a divided yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet, In the crossing direction and the thickness direction of the yoke, the position of each of the magnetic field generation regions is adjustable, The magnet having the plurality of magnetic field generation regions whose positions are adjusted is swingable by the magnet scanning unit, The sputtering apparatus according to claim 4.

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