Power module

Abstract

To provide a power module capable of operating stably.SOLUTION: In a power module 1A, a first control layer 21 connected to a gate electrode 43 includes a first control-side bypass unit 21b that causes a conductive path to be bypassed so that a first sum and a second sum come close to each other. The first sum represents the sum of the length of a first end control-side conductive path between the gate electrode 43 and a first control terminal 53A of a first end power semiconductor element 40Aa and the length of a first end drive-side conductive path between a source electrode 42 and a first detection terminal 54A of the first end power semiconductor element 40Aa, and the second sum represents the sum of the length of a second end drive-side conductive path between the gate electrode 43 and the first control terminal 53A of a second end power semiconductor element 40Ab and the length of a second end drive-side conductive path between the source electrode 42 and the first detection terminal 54A of the second end power semiconductor element 40Ab.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present disclosure relates to a power module.

Background Art

[0002] As an example of the above power module, a power module configured as an inverter device is known (see, for example, Patent Document 1). This power module includes a power semiconductor element composed of transistors such as an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] By the way, in a power module for use in supplying a large current, there may be a case where it is configured by connecting in series a first element group in which a plurality of power semiconductor elements are connected in parallel and a second element group in which a plurality of power semiconductor elements are connected in parallel. A control voltage is supplied from one control terminal of the power module to the control terminals of the plurality of power semiconductor elements constituting the first element group, and a control voltage is supplied from another control terminal of the power module to the control terminals of the plurality of power semiconductor elements constituting the second element group. In this case, for example, due to the arrangement positions of the power semiconductor elements constituting the first element group, there is a variation in the inductance value between the control electrodes of the respective power semiconductor elements and the control terminals of the power module. As a result, the on / off timings of the plurality of power semiconductor elements vary, so that the operation may become unstable. Note that the same problem as that of the power semiconductor elements in the first element group may occur for the power semiconductor elements in the second element group.

[0005] A power module according to one aspect of the present disclosure has a substrate front surface and a substrate back surface facing opposite sides in the thickness direction, and includes a substrate having electrical insulation, a first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each formed on the substrate front surface and having conductivity. The power module further includes a first element back surface mounted on the first mounting layer and having a first drive electrode electrically connected to a first input terminal, and a first element front surface having a second drive electrode electrically connected to an output terminal and a control electrode. The power module includes a plurality of first power semiconductor elements mounted on the first mounting layer in a state of being arranged in one direction when viewed from the thickness direction. The power module further includes a second element back surface mounted on the second mounting layer and having a first drive electrode electrically connected to the output terminal, and a second element front surface having a second drive electrode electrically connected to a second input terminal and a control electrode. The power module includes a plurality of second power semiconductor elements mounted on the second mounting layer in the arranged state in the one direction. The power module further includes a plurality of first control-side connection members connecting the control electrodes of the plurality of first power semiconductor elements and the first control layer and arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements, a plurality of first drive-side connection members connecting the second drive electrodes of the plurality of first power semiconductor elements and the first drive layer and arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements, a plurality of second control-side connection members connecting the control electrodes of the plurality of second power semiconductor elements and the second control layer and arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements, and a plurality of second drive-side connection members connecting the second drive electrodes of the second power semiconductor elements and the second drive layer and arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements. The power module further includes a first control terminal electrically connected to the first control layer, a second control terminal electrically connected to the second control layer, a first detection terminal electrically connected to the first drive layer, and a second detection terminal electrically connected to the second drive layer. The plurality of first power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element at both ends in the arrangement direction of the plurality of first power semiconductor elements.The path between the control electrode and the first control terminal of the first-terminal power semiconductor device is defined as the first-terminal control-side conductive path, and the path between the second drive electrode and the first detection terminal of the first-terminal power semiconductor device is defined as the first-terminal drive-side conductive path. The sum of the length of the first-terminal control-side conductive path and the length of the first-terminal drive-side conductive path is defined as the first sum. The path between the control electrode and the first control terminal of the second-terminal power semiconductor device is defined as the second-terminal control-side conductive path, and the path between the second drive electrode and the first detection terminal of the second-terminal power semiconductor device is defined as the second-terminal drive-side conductive path. The sum of the length of the second-terminal control-side conductive path and the length of the second-terminal drive-side conductive path is defined as the second sum. At least one of the first control layer and the first drive layer has a first detour portion that detours the conductive path so that the first sum and the second sum approach each other.

Brief Description of the Drawings

[0006]

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[0007] [Detailed Description] Hereinafter, embodiments of the power module will be described with reference to the drawings. The embodiments shown below illustrate the configurations and methods for embodying the technical idea, and do not limit the materials, shapes, structures, arrangements, dimensions, etc. of each component to those described below. Various modifications can be made to the following embodiments.

[0008] [First Embodiment] With reference to FIGS. 1 to 25, the power module 1A of the first embodiment will be described. FIGS. 1 to 6 show the external shape of the power module 1A. FIG. 7 shows the internal structure of the power module 1A. In FIG. 9, for convenience, the case 80 and the terminals 50 are shown omitted.

[0009] As shown in FIGS. 1 to 7, the power module 1A mainly includes a substrate 10, a connection member 30, a power semiconductor element 40, a terminal 50, a sealing resin 60 (see FIG. 10), a heat sink 70, and a case 80 that houses these components. The power module 1A is configured to be able to supply a current of, for example, 300 A or more and 1000 A or less. In FIG. 7, for the sake of convenience, the sealing resin 60 is omitted. As shown in FIGS. 1 to 7, the substrate 10, the connection member 30, the power semiconductor element 40, and the sealing resin 60 are each housed by the heat sink 70 and the case 80 and are not exposed to the outside. On the other hand, the terminal 50 is housed in the case 80 with a part thereof exposed or protruding outside the case 80. The power module 1A is used, for example, in an inverter device. As shown in FIGS. 1, 2, and 7, when viewed from the thickness direction of the substrate 10 (hereinafter referred to as "plan view"), the shape of the power module 1A is rectangular. Here, for the sake of convenience of explanation, the direction along the thickness direction of the substrate 10 is defined as the "thickness direction Z", and the two directions orthogonal to each other among the directions orthogonal to the thickness direction Z are defined as the "lateral direction X" and the "longitudinal direction Y", respectively. In the present embodiment, the long side direction of the power module 1A is the lateral direction X, and the short side direction is the longitudinal direction Y.

[0010] FIG. 8 shows the circuit configuration of the power module 1A of the present embodiment. The power module 1A includes a first power semiconductor element group 40AT composed of a plurality of first power semiconductor elements 40A as the power semiconductor element 40, and a second power semiconductor element group 40BT composed of a plurality of second power semiconductor elements 40B. For the sake of convenience, in FIG. 8, one first power semiconductor element 40A is shown as the first power semiconductor element group 40AT, and one second power semiconductor element 40B is shown as the second power semiconductor element group 40BT.

[0011] Each first power semiconductor element 40A of the first power semiconductor element group 40AT and each second power semiconductor element 40B of the second power semiconductor element group 40BT are each used as a switching element. Each power semiconductor element 40A, 40B uses a transistor made of, for example, Si (silicon), SiC (silicon carbide), or GaN (gallium nitride), GaAs (gallium arsenide), or Ga2O3 (gallium oxide). When each power semiconductor element 40A, 40B is made of SiC, it is suitable for speeding up switching. In the present embodiment, each power semiconductor element 40A, 40B uses an N-type MOSFET made of SiC. Note that each power semiconductor element 40A, 40B is not limited to a MOSFET, and may be a transistor such as a field effect transistor including a MISFET (Metal-Insulator-Semiconductor FET) or a bipolar transistor including an IGBT. Each power semiconductor element 40A, 40B may be an N-channel type MOSFET or a P-channel type MOSFET.

[0012] Each of the power semiconductor devices 40A and 40B has a drain electrode 41, a source electrode 42, and a gate electrode 43. Each of the power semiconductor devices 40A and 40B also has a body diode 44. Although not shown in FIG. 8, a plurality of first power semiconductor devices 40A in the first power semiconductor device group 40AT are connected in parallel to each other. That is, the drain electrodes 41 of the plurality of first power semiconductor devices 40A are connected to each other, and the source electrodes 42 of the plurality of first power semiconductor devices 40A are connected to each other. Also, a plurality of second power semiconductor devices 40B in the second power semiconductor device group 40BT are connected in parallel to each other. That is, the drain electrodes 41 of the plurality of second power semiconductor devices 40B are connected to each other, and the source electrodes 42 of the plurality of second power semiconductor devices 40B are connected to each other. The first power semiconductor device group 40AT and the second power semiconductor device group 40BT are connected in series to each other. Specifically, the source electrode 42 (the source electrodes 42 of the plurality of first power semiconductor devices 40A) of the first power semiconductor device group 40AT is electrically connected to the drain electrode 41 (the drain electrodes 41 of the plurality of second power semiconductor devices 40B) of the second power semiconductor device group 40BT. Thus, in the present embodiment, the power module 1A constitutes an inverter circuit, the first power semiconductor device group 40AT constitutes the upper arm, and the second power semiconductor device group 40BT constitutes the lower arm.

[0013] The drain electrodes 41, source electrodes 42, and gate electrodes 43 of each of the plurality of first power semiconductor devices 40A in the first power semiconductor device group 40AT and the plurality of second power semiconductor devices 40B in the second power semiconductor device group 40BT are each connected to a terminal 50.

[0014] As shown in FIGS. 1, 2, and 8, the terminal 50 has a first input terminal 51A, a second input terminal 51B, a first output terminal 52A, a second output terminal 52B, a first control terminal 53A, a second control terminal 53B, a first detection terminal 54A, a second detection terminal 54B, a power supply current terminal 55, and a pair of temperature detection terminals 56. Note that since the pair of temperature detection terminals 56 are not electrically connected to the power semiconductor devices 40A and 40B, they are not shown in FIG. 8 for the sake of convenience.

[0015] The first input terminal 51A is electrically connected to the drain electrode 41 of the first power semiconductor element group 40AT. That is, the first input terminal 51A is electrically connected to each of the drain electrodes 41 of the plurality of first power semiconductor elements 40A. The second input terminal 51B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. That is, the second input terminal 51B is electrically connected to each of the source electrodes 42 of the plurality of second power semiconductor elements 40B. Each of the output terminals 52A, 52B is electrically connected to a node N1 between the source electrode 42 of the first power semiconductor element group 40AT and the drain electrode 41 of the second power semiconductor element group 40BT. That is, each of the output terminals 52A, 52B is electrically connected to the node N1 between the source electrodes 42 of the plurality of first power semiconductor elements 40A and the drain electrodes 41 of the plurality of second power semiconductor elements 40B. The first control terminal 53A is electrically connected to the gate electrode 43 of the first power semiconductor element group 40AT. That is, the first control terminal 53A is electrically connected to each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A. The second control terminal 53B is electrically connected to the gate electrode 43 of the second power semiconductor element group 40BT. That is, the second control terminal 53B is electrically connected to each of the gate electrodes 43 of the plurality of second power semiconductor elements 40B. The first detection terminal 54A is electrically connected to the source electrode 42 of the first power semiconductor element group 40AT. That is, the first detection terminal 54A is electrically connected to each of the source electrodes 42 of the plurality of first power semiconductor elements 40A. The second detection terminal 54B is electrically connected to the source electrode 42 of the second power semiconductor element group 40BT. That is, the second detection terminal 54B is electrically connected to each of the source electrodes 42 of the plurality of second power semiconductor elements 40B. The power supply current terminal 55 is electrically connected to a node N2 between the drain electrode 41 of the first power semiconductor element group 40AT and the first input terminal 51A. That is, the power supply current terminal 55 is electrically connected to the node N2 between each of the drain electrodes 41 of the plurality of first power semiconductor elements 40A and the first input terminal 51A.In this embodiment, each of the control terminals 53A and 53B, each of the detection terminals 54A and 54B, the power current terminal 55, and the pair of temperature detection terminals 56 are electrically connected to a control circuit (not shown) provided outside the power module 1A.

[0016] As shown in FIGS. 1 and 2, the terminals 51A, 51B, 52A, 52B, 53A, 53B, 54A, 54B, 55, and 56 are each provided in the case 80. As shown in FIGS. 1, 2, and 7, the case 80 is formed in a frame shape surrounding the substrate 10, the connection member 30, and the power semiconductor element 40 in a plan view. The case 80 is made of a synthetic resin having electrical insulation properties such as PPS (polyphenylene sulfide) and excellent heat resistance. The case 80 includes a pair of side walls 81A and 81B, a pair of terminal pedestals 82A and 82B, a plurality of attachment portions 83, a power terminal pedestal 84, and an output terminal pedestal 85.

[0017] As shown in FIGS. 2, 6, and 7, in a plan view, a pair of side walls 81A and 81B are arranged to be spaced apart from each other in the vertical direction Y and extend along the horizontal direction X. As shown in FIGS. 3 and 5, in a side view, each of the pair of side walls 81A and 81B extends along the thickness direction Z. As shown in FIGS. 2 and 7, inside the side wall 81A, a first control terminal 53A, a first detection terminal 54A, a power current terminal 55, and a pair of temperature detection terminals 56 are arranged. The first control terminal 53A, the first detection terminal 54A, the power current terminal 55, and the pair of temperature detection terminals 56 are each supported by the side wall 81A. As shown in FIGS. 1 and 3, the first control terminal 53A, the first detection terminal 54A, the power current terminal 55, and the pair of temperature detection terminals 56 each project from the side wall 81A in the thickness direction Z. Also, as shown in FIGS. 2 and 7, inside the side wall 81B, a second control terminal 53B and a second detection terminal 54B are arranged. The second control terminal 53B and the second detection terminal 54B are each supported by the side wall 81B. As shown in FIGS. 1 and 3, the second control terminal 53B and the second detection terminal 54B each project from the side wall 81B in the thickness direction Z. Each of the control terminals 53A and 53B, each of the detection terminals 54A and 54B, the power current terminal 55, and the pair of temperature detection terminals 56 is made of, for example, a metal bar having Cu (copper) as a constituent material. The surface of this metal bar is subjected to Sn (tin) plating. Note that nickel plating may be applied between the surface of the metal bar and the tin plating. Each of the control terminals 53A and 53B, each of the detection terminals 54A and 54B, the power current terminal 55, and the pair of temperature detection terminals 56 are, for example, of the same shape as each other, and in one example, are formed in an L shape having a first portion extending in the vertical direction Y and a second portion extending in the thickness direction Z.

[0018] As shown in Fig. 7, a pair of terminal bases 82A and 82B are connected to both ends of a pair of side walls 81A and 81B in the lateral direction X. These a pair of side walls 81A and 81B and a pair of terminal bases 82A and 82B form a frame shape surrounding the substrate 10, the connection member 30, and the power semiconductor element 40. The pair of terminal bases 82A and 82B are spaced apart from each other in the lateral direction X. A power terminal base 84 protruding outward from the terminal base 82A in the lateral direction X is connected to the terminal base 82A. An output terminal base 85 protruding outward from the terminal base 82B in the lateral direction X is connected to the terminal base 82B.

[0019] As shown in Figs. 2, 4, and 7, the power terminal base 84 has a first terminal base 84A and a second terminal base 84B. The first terminal base 84A and the second terminal base 84B are arranged in the longitudinal direction Y in a state aligned in the lateral direction X. A part of the first input terminal 51A is provided on the first terminal base 84A. The first terminal base 84A supports a part of the first input terminal 51A. A part of the second input terminal 51B is provided on the second terminal base 84B. The second terminal base 84B supports a part of the second input terminal 51B. As shown in Fig. 7, a nut 84N is provided inside the first terminal base 84A. Also, as shown in Fig. 7, a nut 84N is provided inside the second terminal base 84B in the same manner as the first terminal base 84A.

[0020] As shown in Fig. 7, in a plan view, the first input terminal 51A and the second input terminal 51B have a symmetrical shape. Each of the input terminals 51A, 51B has an exposed portion 51a exposed to the outside of the power module 1A, a connection portion 51b for electrically connecting to each of the power semiconductor elements 40A, 40B, and a connecting portion 51c connecting the exposed portion 51a and the connection portion 51b. In the present embodiment, each of the input terminals 51A, 51B is configured as a single component in which the exposed portion 51a, the connection portion 51b, and the connecting portion 51c are integrally formed. The exposed portion 51a is provided with a through hole 51d penetrating in the thickness direction Z of the exposed portion 51a. In a side view of the first input terminal 51A viewed from the longitudinal direction Y, the first input terminal 51A is formed in a stepped shape. The exposed portion 51a of the first input terminal 51A is supported by the first terminal block 84A. The exposed portion 51a of the second input terminal 51B is supported by the second terminal block 84B. As shown in Fig. 7, the through hole 51d of the exposed portion 51a of the first input terminal 51A is provided corresponding to the nut 84N of the first terminal block 84A. The through hole 51d of the exposed portion 51a of the second input terminal 51B is provided corresponding to the nut 84N of the second terminal block 84B. A plurality of connection portions 51b are provided and are arranged at intervals in the longitudinal direction Y.

[0021] As shown in Figs. 2, 5, and 7, the output terminal block 85 has a first terminal block 85A and a second terminal block 85B. The first terminal block 85A and the second terminal block 85B are arranged in the longitudinal direction Y in a state aligned in the lateral direction X. A part of the first output terminal 52A is provided on the first terminal block 85A. The first terminal block 85A supports a part of the first output terminal 52A. A part of the second output terminal 52B is provided on the second terminal block 85B. The second terminal block 85B supports a part of the second output terminal 52B. As shown in Fig. 7, a nut 85N is provided inside the first terminal block 85A. Also, as shown in Fig. 7, similar to the first terminal block 85A, a nut 85N is also provided inside the second terminal block 85B.

[0022] As shown in FIG. 7, in a plan view, the first output terminal 52A and the second output terminal 52B have a symmetrical shape. In the present embodiment, each of the output terminals 52A and 52B has the same shape as each of the input terminals 51A and 51B. Each of the output terminals 52A and 52B has an exposed portion 52a that is exposed outside the power module 1A, a connection portion 52b for electrically connecting to each of the power semiconductor elements 40A and 40B, and a connecting portion 52c that connects the exposed portion 52a and the connection portion 52b. In the present embodiment, each of the output terminals 52A and 52B is configured as a single component in which the exposed portion 52a, the connection portion 52b, and the connecting portion 52c are integrally formed. The exposed portion 52a is provided with a through hole 52d that penetrates the exposed portion 52a in the thickness direction Z. In a side view of the first output terminal 52A viewed from the longitudinal direction Y, the first output terminal 52A is formed in a stepped shape. The exposed portion 52a of the first output terminal 52A is supported by the first terminal block 85A. The exposed portion 52a of the second output terminal 52B is supported by the second terminal block 85B. As shown in FIG. 7, the through hole 52d of the exposed portion 52a of the first output terminal 52A is provided corresponding to the nut 85N of the first terminal block 85A. The through hole 52d of the exposed portion 52a of the second output terminal 52B is provided corresponding to the nut 85N of the second terminal block 85B. A plurality of connection portions 52b are provided and are arranged spaced apart in the longitudinal direction Y.

[0023] As shown in FIGS. 3 and 6, the heat sink 70 closes one end of an opening that opens in the thickness direction Z of the case 80 by being attached to the case 80. The heat sink 70 is made of, for example, Cu or a Cu alloy. In this case, nickel plating may be applied to the surface of the metal plate. As shown in FIG. 9, the heat sink 70 has a main heat dissipation surface 70s and a back heat dissipation surface 70r facing the opposite side in the thickness direction Z. The back heat dissipation surface 70r is exposed outside the power module 1A. As shown in FIG. 6, in a plan view, support holes 71 that penetrate the heat sink 70 in the thickness direction Z are provided at the four corners of the heat sink 70.

[0024] As shown in FIGS. 2 and 7, the plurality of mounting portions 83 are provided at the four corners of the case 80 in a plan view. Each mounting portion 83 is provided with a mounting hole 83a penetrating the mounting portion 83 in the thickness direction Z. When viewed from the thickness direction Z, the plurality of mounting portions 83 are arranged so as to overlap the four corners of the heat sink 70. For this reason, the plurality of mounting holes 83a correspond to the support holes 71 (see FIG. 6) of the heat sink 70. By fitting fastening members such as pins into the plurality of mounting holes 83a and the support holes 71, the heat sink 70 is supported by the case 80.

[0025] As shown in FIGS. 1 and 2, the case 80 includes a top plate 86. The top plate 86 closes the internal region of the power module 1A formed by the heat sink 70, a pair of side walls 81A, 81B, and a pair of terminal bases 82A, 82B. The top plate 86 is supported by the pair of side walls 81A, 81B in a state of being separated from the heat sink 70 and the substrate 10 in the thickness direction Z.

[0026] Next, with reference to FIGS. 7 and 9 to 19, a detailed configuration of the internal region of the power module 1A will be described. Note that the two-dot chain lines in FIGS. 15, 16, 18, and 19 are auxiliary lines for clarifying the positional relationship between each control layer and each drive layer.

[0027] As shown in FIGS. 7 and 10, the internal region of the power module 1A is an opening region surrounded by a pair of side walls 81A, 81B and a pair of terminal bases 82A, 82B of the case 80, and is a region in which one end in the thickness direction Z of the opening region is closed by the heat sink 70. A substrate 10, a connection member 30, a power semiconductor element 40, and a sealing resin 60 (not shown in FIG. 7) are accommodated in this internal region.

[0028] As shown in FIG. 10, the sealing resin 60 is made of a resin material having electrical insulation properties and is filled in the internal region closed by the heat sink 70 and the top plate 86. The sealing resin 60 seals the substrate 10, the connection member 30, and the power semiconductor element 40.

[0029] As shown in FIG. 9, the substrate 10 is joined to the main heat-radiating surface 70s of the heat sink 70 by a joining material such as Ag (silver) paste or solder. Note that the joining material is not limited to conductive joining materials such as Ag paste and solder, and an electrically insulating joining material may be used. As shown in FIG. 7, the substrate 10 includes a first substrate 11 and a second substrate 12. The first substrate 11 and the second substrate 12 are arranged spaced apart in the lateral direction X in a state aligned in the longitudinal direction Y. The first substrate 11 is arranged on the side of each of the input terminals 51A and 51B in the internal region in the lateral direction X, and the second substrate 12 is arranged on the side of each of the output terminals 52A and 52B in the internal region in the lateral direction X. As shown in FIG. 10, the first substrate 11 has a first substrate main surface 11s and a first substrate back surface 11r facing opposite sides in the thickness direction Z. The second substrate 12 has a second substrate main surface 12s and a second substrate back surface 12r facing opposite sides in the thickness direction Z.

[0030] Each of the substrates 11 and 12 is an electrically insulating member on which a mounting layer for mounting the power semiconductor element 40 and a conductive layer for electrically connecting to the power semiconductor element 40 are arranged. The constituent material of each of the substrates 11 and 12 is a ceramic having excellent thermal conductivity. Examples of such a ceramic include AlN (aluminum nitride). As each of the substrates 11 and 12, a DBC (Direct Bonding Copper) substrate having Cu foil joined to each of the substrate main surfaces 11s and 12s and each of the substrate back surfaces 11r and 12r can be used. By using a DBC substrate, the mounting layer, the conductive layer, etc. can be easily formed by patterning the copper foil joined to each of the substrate main surfaces 11s and 12s. Further, the copper foil joined to each of the substrate back surfaces 11r and 12r can be used as a heat transfer layer.

[0031] As shown in FIGS. 7 and 11, the shape of the first substrate 11 in a plan view is a substantially rectangular shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. As shown in FIG. 11, the first substrate 11 mainly has a first substrate side surface 11a, a second substrate side surface 11b, a third substrate side surface 11c, and a fourth substrate side surface 11d. The first substrate side surface 11a and the second substrate side surface 11b are surfaces facing opposite sides in the vertical direction Y and extend along the horizontal direction X. The first substrate side surface 11a is the side surface of the first substrate 11 on the side wall 81A side, and the second substrate side surface 11b is the side surface of the first substrate 11 on the side wall 81B side. The third substrate side surface 11c and the fourth substrate side surface 11d are surfaces facing opposite sides in the horizontal direction X and extend along the vertical direction Y. The third substrate side surface 11c is the side surface of the first substrate 11 on the terminal pedestal 82A side, and the fourth substrate side surface 11d is the side surface of the first substrate 11 on the terminal pedestal 82B (see FIG. 7) side.

[0032] As shown in FIG. 11, on the first substrate main surface 11s of the first substrate 11, a first mounting layer 13A, a second mounting layer 14A, a conductive layer 15A, a first control layer 21, a second control layer 25, a first driving layer 23, a second driving layer 27, and a thermistor mounting layer 16 are arranged.

[0033] The first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are arranged at intervals in the vertical direction Y. The first mounting layer 13A is arranged on the first substrate side surface 11a side of the first substrate 11 rather than the second mounting layer 14A and the conductive layer 15A in the vertical direction Y. The conductive layer 15A is arranged on the second substrate side surface 11b side of the first substrate 11 rather than the first mounting layer 13A and the second mounting layer 14A in the vertical direction Y. The second mounting layer 14A is arranged between the first mounting layer 13A and the conductive layer 15A in the vertical direction Y.

[0034] The first mounting layer 13A has a strip-shaped main mounting portion 13a extending in the lateral direction X, a terminal-side connection portion 13b formed at an end of the main mounting portion 13a in the lateral direction X on the third substrate side surface 11c side of the first substrate 11, and an interlayer connection portion 13c formed at an end of the main mounting portion 13a in the lateral direction X on the fourth substrate side surface 11d side of the first substrate 11. In the present embodiment, the first mounting layer 13A is a single member in which the main mounting portion 13a, the terminal-side connection portion 13b, and the interlayer connection portion 13c are integrally formed. The terminal-side connection portion 13b extends in the longitudinal direction Y and protrudes from both sides of the main mounting portion 13a in the longitudinal direction Y. The terminal-side connection portion 13b is arranged adjacent to the terminal pedestal 82A (see FIG. 7), that is, the first input terminal 51A, in the lateral direction X. A plurality of connection portions 51b of the first input terminal 51A are connected to the terminal-side connection portion 13b. The width dimension of the main mounting portion 13a (the dimension of the main mounting portion 13a in the longitudinal direction Y) is larger than the width dimension of the first control layer 21 (the dimension in the direction orthogonal to the direction in which the first control layer 21 extends in a plan view) and larger than the width dimension of the first driving layer 23 (the dimension of the first driving layer 23 in the longitudinal direction Y). The width dimension of the main mounting portion 13a is twice or more, preferably four times or more, the width dimensions of the first control layer 21 and the first driving layer 23. In the present embodiment, the width dimension of the main mounting portion 13a is about eight times the width dimensions of the first control layer 21 and the first driving layer 23. The width dimension of the interlayer connection portion 13c (the dimension of the interlayer connection portion 13c in the longitudinal direction Y) is larger than the width dimension of the main mounting portion 13a (the dimension of the main mounting portion 13a in the longitudinal direction Y). The edge of the interlayer connection portion 13c on the first substrate side surface 11a side of the first substrate 11 in the longitudinal direction Y is aligned with the edge of the main mounting portion 13a on the first substrate side surface 11a side of the first substrate 11 in the longitudinal direction Y. Therefore, the interlayer connection portion 13c protrudes toward the second substrate side surface 11b side of the first substrate 11 with respect to the main mounting portion 13a.

[0035] The conductive layer 15A has a strip-shaped main conductive portion 15a extending in the lateral direction X, a terminal-side connection portion 15b formed at an end of the main conductive portion 15a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, and an interlayer connection portion 15c formed at an end of the main conductive portion 15a on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X. In the present embodiment, the conductive layer 15A is a single member in which the main conductive portion 15a, the terminal-side connection portion 15b, and the interlayer connection portion 15c are integrally formed. The terminal-side connection portion 15b extends in the longitudinal direction Y and protrudes from both sides of the main conductive portion 15a in the longitudinal direction Y. The width dimension of the main conductive portion 15a (the dimension of the main conductive portion 15a in the longitudinal direction Y) is equal to the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the longitudinal direction Y). The terminal-side connection portion 15b is arranged adjacent to the terminal-side connection portion 13b of the first mounting layer 13A in the longitudinal direction Y. Further, the terminal-side connection portion 15b is arranged adjacent to the terminal pedestal 82A, that is, the second input terminal 51B in the lateral direction X. A plurality of connection portions 51b of the second input terminal 51B are connected to the terminal-side connection portion 15b. The width dimension of the interlayer connection portion 15c (the dimension of the interlayer connection portion 15c in the longitudinal direction Y) is larger than the width dimension of the main conductive portion 15a (the dimension of the main conductive portion 15a in the longitudinal direction Y). The edge of the interlayer connection portion 15c on the second substrate side surface 11b side of the first substrate 11 in the longitudinal direction Y is aligned with the edge of the main conductive portion 15a on the second substrate side surface 11b side of the first substrate 11 in the longitudinal direction Y. Therefore, the interlayer connection portion 15c protrudes toward the first substrate side surface 11a side of the first substrate 11 with respect to the main conductive portion 15a.

[0036] The second mounting layer 14A is disposed closer to the fourth substrate side surface 11d of the first substrate 11 than the terminal side connection portion 13b of the first mounting layer 13A and the terminal side connection portion 15b of the conductive layer 15A in the lateral direction X. In the longitudinal direction Y, the second mounting layer 14A is disposed between the main mounting portion 13a of the first mounting layer 13A and the main conductive portion 15a of the conductive layer 15A. In the present embodiment, the second mounting layer 14A is disposed at the central portion of the first substrate 11 in the longitudinal direction Y. In the present embodiment, the edge of the second mounting layer 14A on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X, the edge of the main mounting portion 13a of the first mounting layer 13A on the fourth substrate side surface 11d side in the lateral direction X, and the edge of the main conductive portion 15a of the conductive layer 15A on the fourth substrate side surface 11d side in the lateral direction X are aligned in the longitudinal direction Y. The second mounting layer 14A has a strip-shaped main mounting portion 14a extending in the lateral direction X and an interlayer connection portion 14b formed at the end portion of the main mounting portion 14a on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X. In the present embodiment, the second mounting layer 14A is a single member in which the main mounting portion 14a and the interlayer connection portion 14b are integrally formed. The width dimension of the main mounting portion 14a of the second mounting layer 14A (the dimension of the main mounting portion 14a in the longitudinal direction Y) is larger than the width dimension of the main mounting portion 13a of the first mounting layer 13A (the dimension of the main mounting portion 13a in the longitudinal direction Y) and the width dimension of the main conductive portion 15a of the conductive layer 15A (the dimension of the main conductive portion 15a in the longitudinal direction Y). The width dimension of the interlayer connection portion 14b (the dimension of the interlayer connection portion 14b in the longitudinal direction Y) is smaller than the width dimension of the main mounting portion 14a. The interlayer connection portion 14b is formed to be recessed in the longitudinal direction Y from both edge portions of the main mounting portion 14a in the longitudinal direction Y.

[0037] The first control layer 21 and the first drive layer 23 are each arranged on the first substrate side surface 11a side of the first substrate 11 rather than the main mounting part 13a of the first mounting layer 13A in the vertical direction Y. Also, the first control layer 21 and the first drive layer 23 are each arranged on the fourth substrate side surface 11d side of the first substrate 11 rather than the terminal side connection part 13b of the first mounting layer 13A in the horizontal direction X. The first control layer 21 and the first drive layer 23 are arranged at a distance from each other in the vertical direction Y. The first drive layer 23 is arranged on the main mounting part 13a side of the first mounting layer 13A rather than the first control layer 21. In other words, the first control layer 21 is arranged on the first substrate side surface 11a side of the first substrate 11 rather than the first drive layer 23. When viewed from the vertical direction Y, the first control layer 21 overlaps with the first drive layer 23.

[0038] The second control layer 25 and the second drive layer 27 are each arranged on the second substrate side surface 11b side of the first substrate 11 rather than the main conductive part 15a of the conductive layer 15A in the vertical direction Y. Also, the second control layer 25 and the second drive layer 27 are each arranged on the fourth substrate side surface 11d side of the first substrate 11 rather than the terminal side connection part 15b of the conductive layer 15A in the horizontal direction X. The second control layer 25 and the second drive layer 27 are arranged at a distance from each other in the vertical direction Y. The second drive layer 27 is arranged on the main conductive part 15a side of the conductive layer 15A rather than the second control layer 25. In other words, the second control layer 25 is arranged on the second substrate side surface 11b side of the first substrate 11 rather than the second drive layer 27. When viewed from the vertical direction Y, the second drive layer 27 overlaps with the second control layer 25. When viewed from the vertical direction Y, the second drive layer 27 overlaps with the main conductive part 15a of the conductive layer 15A. Thus, the first mounting layer 13A, the second mounting layer 14A, and the conductive layer 15A are sandwiched in the vertical direction Y by the first control layer 21 and the first drive layer 23, and the second control layer 25 and the second drive layer 27.

[0039] The thermistor mounting layer 16 is disposed closer to the first substrate side surface 11a of the first substrate 11 than the main mounting portion 13a of the first mounting layer 13A in the vertical direction Y. Also, the thermistor mounting layer 16 is disposed so as to overlap the terminal side connection portion 13b, the first control layer 21, and the first drive layer 23 when viewed in the lateral direction X. Further, the thermistor mounting layer 16 is disposed between the first control layer 21 and the first drive layer 23 and the terminal side connection portion 13b of the first mounting layer 13A in the lateral direction X.

[0040] A thermistor 17, which is a temperature detection element, can be mounted on the thermistor mounting layer 16. In the present embodiment, the thermistor 17 is mounted on the thermistor mounting layer 16. The thermistor mounting layer 16 has a pair of regions spaced apart from each other in the vertical direction Y. The positive electrode of the thermistor 17 can be electrically connected to one region, and the negative electrode of the thermistor 17 can be electrically connected to the other region.

[0041] As shown in FIGS. 7 and 12, the shape of the second substrate 12 in a plan view is a substantially rectangular shape in which the horizontal direction X is the long side direction and the vertical direction Y is the short side direction. In the present embodiment, the shape of the second substrate 12 is a symmetric shape centered on the center line along the vertical direction Y with respect to the first substrate 11, and the sizes of the second substrate 12 in the horizontal direction X, the vertical direction Y, and the thickness direction Z are equal to the sizes of the first substrate 11 in the horizontal direction X, the vertical direction Y, and the thickness direction Z. The second substrate 12 mainly has a first substrate side surface 12a, a second substrate side surface 12b, a third substrate side surface 12c, and a fourth substrate side surface 12d. The first substrate side surface 12a and the second substrate side surface 12b are surfaces facing opposite sides in the vertical direction Y and extending along the horizontal direction X. The first substrate side surface 12a is the side surface of the second substrate 12 on the side wall 81A side, and the second substrate side surface 12b is the side surface of the second substrate 12 on the side wall 81B side. The third substrate side surface 12c and the fourth substrate side surface 12d are surfaces facing opposite sides in the horizontal direction X and extending along the vertical direction Y. The third substrate side surface 12c is the side surface of the second substrate 12 on the terminal pedestal 82A (see FIG. 7) side, and the fourth substrate side surface 12d is the side surface of the second substrate 12 on the terminal pedestal 82B (see FIG. 7) side. Note that the shape of the second substrate 12 does not have to be symmetric with the first substrate 11, and the size of the second substrate 12 may be different from the size of the first substrate 11.

[0042] As shown in FIG. 12, on the second substrate main surface 12s of the second substrate 12, a first mounting layer 13B, a second mounting layer 14B, a conductive layer 15B, a first control layer 22, a second control layer 26, a first driving layer 24, and a second driving layer 28 are arranged.

[0043] The first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are arranged at intervals in the vertical direction Y. The first mounting layer 13B is arranged on the first substrate side surface 12a side of the second substrate 12 rather than the second mounting layer 14B and the conductive layer 15B in the vertical direction Y. The conductive layer 15B is arranged on the second substrate side surface 12b side of the second substrate 12 rather than the first mounting layer 13B and the second mounting layer 14B in the vertical direction Y. The second mounting layer 14B is arranged between the first mounting layer 13B and the conductive layer 15B in the vertical direction Y.

[0044] The first mounting layer 13B has a strip-shaped main mounting portion 13d extending in the lateral direction X, a terminal-side connection portion 13e formed at an end of the main mounting portion 13d in the lateral direction X on the fourth substrate side surface 12d side of the second substrate 12, and an interlayer connection portion 13f formed at an end of the main mounting portion 13d in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. In the present embodiment, the first mounting layer 13B is a single member in which the main mounting portion 13d, the terminal-side connection portion 13e, and the interlayer connection portion 13f are integrally formed. The terminal-side connection portion 13e extends in the longitudinal direction Y and protrudes from the main mounting portion 13d toward the first substrate side surface 12a side of the second substrate 12 in the longitudinal direction Y. The width dimension of the terminal-side connection portion 13e (the dimension of the terminal-side connection portion 13e in the lateral direction X) is smaller than the width dimension of the main mounting portion 13d (the dimension of the main mounting portion 13d in the longitudinal direction Y). The width dimension of the terminal-side connection portion 13e is equal to, for example, the width dimension of the first control layer 22 (the dimension of the first control layer 22 in the longitudinal direction Y). The width dimension of the main mounting portion 13d (the dimension of the main mounting portion 13d in the longitudinal direction Y) is larger than the width dimension of the first control layer 22 (the dimension of the first control layer 22 in the longitudinal direction Y) and larger than the width dimension of the first driving layer 24 (the dimension in the direction orthogonal to the direction in which the first driving layer 24 extends in a plan view). The width dimension of the main mounting portion 13d is two times or more, preferably four times or more, the width dimensions of the first control layer 22 and the first driving layer 24. In the present embodiment, the width dimension of the main mounting portion 13d is about eight times the width dimensions of the first control layer 22 and the first driving layer 24. In the present embodiment, the width dimension of the main mounting portion 13d is equal to the width dimension of the main mounting portion 13a (see FIG. 11) of the first mounting layer 13A. The width dimension of the interlayer connection portion 13f (the dimension of the interlayer connection portion 13f in the longitudinal direction Y) is larger than the width dimension of the main mounting portion 13d (the dimension of the main mounting portion 13d in the longitudinal direction Y). The edge of the interlayer connection portion 13f on the first substrate side surface 12a side of the second substrate 12 in the longitudinal direction Y is aligned with the edge of the main mounting portion 13d on the first substrate side surface 12a side of the second substrate 12 in the longitudinal direction Y. For this reason, the interlayer connection portion 13f protrudes toward the second substrate side surface 12b side of the second substrate 12 with respect to the main mounting portion 13d.

[0045] The conductive layer 15B has a strip-shaped main conductive portion 15d extending in the lateral direction X and an interlayer connection portion 15e formed at an end of the main conductive portion 15d in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. The width dimension (the dimension in the longitudinal direction Y of the main conductive portion 15d) of the main conductive portion 15d of the conductive layer 15B is equal to the width dimension (the dimension in the longitudinal direction Y of the main mounting portion 13d) of the main mounting portion 13d of the first mounting layer 13B. The width dimension (the dimension in the longitudinal direction Y of the interlayer connection portion 15e) of the interlayer connection portion 15e is larger than the width dimension (the dimension in the longitudinal direction Y of the main conductive portion 15d) of the main conductive portion 15d. The edge of the interlayer connection portion 15e on the second substrate side surface 12b side of the second substrate 12 in the longitudinal direction Y is aligned with the edge of the main conductive portion 15d on the second substrate side surface 12b side of the second substrate 12 in the longitudinal direction Y. For this reason, the interlayer connection portion 15e protrudes toward the first substrate side surface 12a side of the second substrate 12 with respect to the main conductive portion 15d.

[0046] The second mounting layer 14B has a strip-shaped main mounting portion 14c extending in the lateral direction X, a terminal-side connection portion 14d formed at an end of the main mounting portion 14c in the lateral direction X on the fourth substrate side surface 12d side of the second substrate 12, and an interlayer connection portion 14e formed at an end of the main mounting portion 14c in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. In the present embodiment, the second mounting layer 14B is a single member in which the main mounting portion 14c, the terminal-side connection portion 14d, and the interlayer connection portion 14e are integrally formed. The main mounting portion 14c is disposed between the main mounting portion 13d of the first mounting layer 13B and the conductive layer 15B in the longitudinal direction Y. In the present embodiment, the main mounting portion 14c is disposed at the central portion of the second substrate 12 in the longitudinal direction Y. The width dimension of the main mounting portion 14c (the dimension of the main mounting portion 14c in the longitudinal direction Y) is larger than the width dimension of the main mounting portion 13d of the first mounting layer 13B and the width dimension of the main conductive portion 15d of the conductive layer 15B. The edge on the third substrate side surface 12c side of the second substrate 12 in the second mounting layer 14B in the lateral direction X, the edge on the third substrate side surface 12c side of the second substrate 12 in the first mounting layer 13B in the lateral direction X, and the edge on the third substrate side surface 12c side of the second substrate 12 in the conductive layer 15B in the lateral direction X are aligned with each other in the longitudinal direction Y. The terminal-side connection portion 14d extends in the longitudinal direction Y and protrudes from both sides of the main mounting portion 14c in the longitudinal direction Y. Thus, the shape of the second mounting layer 14B in plan view is T-shaped. Further, the terminal-side connection portion 14d is disposed on the fourth substrate side surface 12d side of the second substrate 12 rather than the first mounting layer 13B and the conductive layer 15B. The terminal-side connection portion 14d is disposed adjacent to the terminal pedestal 82B, that is, the first output terminal 52A and the second output terminal 52B in the lateral direction X. A plurality of connection portions 52b of each output terminal 52A, 52B are connected to the terminal-side connection portion 14d. The width dimension of the interlayer connection portion 14e (the dimension of the interlayer connection portion 14e in the longitudinal direction Y) is smaller than the width dimension of the main mounting portion 14c. The interlayer connection portion 14e is formed to be recessed in the longitudinal direction Y from both end edges of the main mounting portion 14c in the longitudinal direction Y.

[0047] The first control layer 22 and the first drive layer 24 are each disposed on the first substrate side surface 12a side of the second substrate 12 rather than the main mounting portion 13d of the first mounting layer 13B in the vertical direction Y. Also, the first control layer 22 and the first drive layer 24 are each disposed on the third substrate side surface 12c side of the second substrate 12 rather than the terminal side connection portion 13e of the first mounting layer 13B in the horizontal direction X. The first control layer 22 and the first drive layer 24 are spaced apart in the vertical direction Y. The first drive layer 24 is disposed on the main mounting portion 13d side of the first mounting layer 13B rather than the first control layer 22. In other words, the first control layer 22 is disposed on the first substrate side surface 12a side of the second substrate 12 rather than the first drive layer 24. When viewed from the vertical direction Y, the first drive layer 24 overlaps the first control layer 22. When viewed from the vertical direction Y, the first drive layer 24 overlaps the main mounting portion 13d of the first mounting layer 13B. When viewed from the horizontal direction X, the first control layer 22 and the first drive layer 24 each overlap the terminal side connection portion 13e of the first mounting layer 13B and the terminal side connection portion 14d of the second mounting layer 14B.

[0048] The second control layer 26 and the second drive layer 28 are each disposed on the second substrate side surface 12b side of the second substrate 12 rather than the conductive layer 15B in the vertical direction Y. Also, the second control layer 26 and the second drive layer 28 are each disposed on the third substrate side surface 12c side of the second substrate 12 rather than the terminal side connection portion 14d of the second mounting layer 14B in the horizontal direction X. The second control layer 26 and the second drive layer 28 are spaced apart in the vertical direction Y. The second drive layer 28 is disposed on the conductive layer 15B side rather than the second control layer 26. In other words, the second control layer 26 is disposed on the second substrate side surface 12b side of the second substrate 12 rather than the second drive layer 28. When viewed from the vertical direction Y, the second drive layer 28 overlaps the second control layer 26. When viewed from the vertical direction Y, the second control layer 26 overlaps the conductive layer 15B. Thus, the first mounting layer 13B, the second mounting layer 14B, and the conductive layer 15B are sandwiched in the vertical direction Y by the first control layer 22 and the first drive layer 24, and the second control layer 26 and the second drive layer 28.

[0049] As shown in FIG. 7, the main mounting portion 13a and the interlayer connection portion 13c of the first mounting layer 13A and the main mounting portion 13d and the interlayer connection portion 13f of the first mounting layer 13B are arranged spaced apart in the lateral direction X in a state aligned in the longitudinal direction Y. The main mounting portion 14a and the interlayer connection portion 14b of the second mounting layer 14A and the main mounting portion 14c and the interlayer connection portion 14e of the second mounting layer 14B are arranged spaced apart in the lateral direction X in a state aligned in the longitudinal direction Y. The main conductive portion 15a and the interlayer connection portion 15c of the conductive layer 15A and the main conductive portion 15d and the interlayer connection portion 15e of the conductive layer 15B are arranged spaced apart in the lateral direction X in a state aligned in the longitudinal direction Y.

[0050] As shown in FIG. 13, the interlayer connection portion 13c of the first mounting layer 13A and the interlayer connection portion 13f of the first mounting layer 13B are connected by a plate-like connecting member 90A which is an example of a first mounting layer connection member. The interlayer connection portion 14b of the second mounting layer 14A and the interlayer connection portion 14e of the second mounting layer 14B are connected by a plate-like connecting member 90B which is an example of a second mounting layer connection member. The interlayer connection portion 15c of the conductive layer 15A and the interlayer connection portion 15e of the conductive layer 15B are connected by a plate-like connecting member 90C.

[0051] As shown in FIG. 13, in a plan view, the shapes of the connecting members 90A to 90C are equal to each other. In one example, the connecting members 90A to 90C are each made of Cu or a Cu alloy. Each of the connecting members 90A to 90C has a pair of connecting portions 91 extending in the lateral direction X and a connecting portion 92 connecting the pair of connecting portions 91 in the longitudinal direction Y. In the present embodiment, each of the connecting members 90A to 90C is configured as a single member in which the pair of connecting portions 91 and the connecting portion 92 are integrally formed. The pair of connecting portions 91 are spaced apart from each other in the longitudinal direction Y and each extends in the lateral direction X. The connecting portion 92 is provided so as to connect the central portions in the lateral direction X of the pair of connecting portions 91. For this reason, the shapes of the connecting members 90A to 90C in a plan view are each in an H shape.

[0052] The pair of connection parts 91 of the connection member 90A are connected to the interlayer connection part 13c of the first mounting layer 13A and the interlayer connection part 13f of the first mounting layer 13B. The connection part 92 of the connection member 90A is located between the interlayer connection part 13c and the interlayer connection part 13f in the lateral direction X. In this way, the first mounting layer 13A and the first mounting layer 13B are electrically connected by the connection member 90A.

[0053] The pair of connection parts 91 of the connection member 90B are connected to the interlayer connection part 14b of the second mounting layer 14A and the interlayer connection part 14e of the second mounting layer 14B. The connection part 92 of the connection member 90B is located between the interlayer connection part 14b and the interlayer connection part 14e in the lateral direction X. In this way, the second mounting layer 14A and the second mounting layer 14B are electrically connected by the connection member 90B.

[0054] The pair of connection parts 91 of the connection member 90C are connected to the interlayer connection part 15c of the conductive layer 15A and the interlayer connection part 15e of the conductive layer 15B. The connection part 92 of the connection member 90C is located between the interlayer connection part 15c and the interlayer connection part 15e in the lateral direction X. In this way, the conductive layer 15A and the conductive layer 15B are electrically connected by the connection member 90C.

[0055] As shown in FIG. 11, a plurality (five in this embodiment) of first power semiconductor elements 40A are arranged as power semiconductor elements 40 on the main mounting part 13a of the first mounting layer 13A. The plurality of first power semiconductor elements 40A are arranged at intervals in the lateral direction X in a state aligned in the vertical direction Y. Therefore, the lateral direction X, which is the arrangement direction of the plurality of first power semiconductor elements 40A, is the first direction described in the claims. Further, in this embodiment, when viewed from the thickness direction Z, the vertical direction Y orthogonal to the lateral direction X is the second direction intersecting the first direction when viewed from the thickness direction. Each of the plurality of first power semiconductor elements 40A is arranged at the end on the side of the second mounting layer 14A in the main mounting part 13a in the vertical direction Y. In the lateral direction X, the plurality of first power semiconductor elements 40A are not arranged at the terminal-side connection part 13b and the interlayer connection part 13c.

[0056] As shown in FIGS. 9 and 10, each first power semiconductor element 40A has a device main surface 40s and a device back surface 40r facing opposite sides in the thickness direction Z. Here, the device main surface 40s of the first power semiconductor element 40A is the first device main surface described in the claims, and the device back surface 40r of the first power semiconductor element 40A is the first device back surface described in the claims. Each first power semiconductor element 40A is arranged on the first mounting layer 13A such that the device back surface 40r faces the main mounting portion 13a. The device back surface 40r is joined to the main mounting portion 13a by a conductive bonding material. An example of the conductive bonding material is Ag paste or solder. A drain electrode 41 (see FIG. 8), which is an example of a first drive electrode, is formed on the device back surface 40r. Therefore, the drain electrode 41 is electrically connected to the first mounting layer 13A. Since the first mounting layer 13A is electrically connected to the first input terminal 51A, the drain electrode 41 is electrically connected to the first input terminal 51A via the first mounting layer 13A.

[0057] As shown in FIG. 11, a source electrode 42, which is an example of a second drive electrode, and a gate electrode 43, which is an example of a control electrode, are formed on the device main surface 40s. The source electrode 42 includes a main source electrode 42A, a first source electrode 42B, and a second source electrode 42C.

[0058] The main source electrode 42A is formed in a portion of the main element surface 40s on the side of the second mounting layer 14A in the longitudinal direction Y. The shape of the main source electrode 42A in plan view is a rectangular shape with the transverse direction X being the long side direction and the longitudinal direction Y being the short side direction, occupying more than half of the area of the main element surface 40s. A first element connection member 31A is connected to the main source electrode 42A as a connection member 30. Therefore, in plan view, the plurality of first element connection members 31A are arranged spaced apart from each other in the transverse direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first element connection member 31A is formed in a strip shape extending in the longitudinal direction Y in plan view. The first element connection member 31A is made of, for example, a thin plate of Cu or a Cu alloy, or a thin plate of Al (aluminum) or an Al alloy. Further, the first element connection member 31A is connected to the second mounting layer 14A. More specifically, the first element connection member 31A is connected to an end portion of the second mounting layer 14A in the longitudinal direction Y on the side of the first mounting layer 13A. In this way, the first element connection member 31A connects the main source electrode 42A of each first power semiconductor element 40A and the second mounting layer 14A. Therefore, the source electrode 42 (see FIG. 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14A.

[0059] The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are respectively arranged at end portions of the main element surface 40s on the side of the first driving layer 23 in the longitudinal direction Y. The first source electrode 42B, the second source electrode 42C, and the gate electrode 43 are arranged spaced apart from each other in the transverse direction X in a state aligned in the longitudinal direction Y. The gate electrode 43 is arranged between the first source electrode 42B and the second source electrode 42C in the transverse direction X. The shape of the gate electrode 43 in plan view is a rectangular shape. The first source electrode 42B is arranged on the side of the fourth substrate side surface 11d of the first substrate 11 with respect to the gate electrode 43, and the second source electrode 42C is arranged on the side of the third substrate side surface 11c of the first substrate 11 with respect to the gate electrode 43. The shapes of the first source electrode 42B and the second source electrode 42C in plan view are the same as each other, and are rectangular shapes with the transverse direction X being the long side direction and the longitudinal direction Y being the short side direction.

[0060] In each of the first power semiconductor elements 40A, the first source electrode 42B and the first driving layer 23 are connected by a first driving-side connection member 33A as a connection member 30, and the gate electrode 43 and the first control layer 21 are connected by a first control-side connection member 32A as a connection member 30.

[0061] In the main mounting portion 14a of the second mounting layer 14A, a plurality (five in this embodiment) of second power semiconductor elements 40B are arranged as the power semiconductor elements 40. The plurality of second power semiconductor elements 40B are arranged at intervals in the lateral direction X (the first direction) in a state aligned in the longitudinal direction Y. Each of the plurality of second power semiconductor elements 40B is arranged at an end portion on the conductive layer 15A side of the main mounting portion 14a in the longitudinal direction Y. In the lateral direction X, the plurality of second power semiconductor elements 40B are not arranged in the interlayer connection portion 14b.

[0062] Since the configuration of each second power semiconductor element 40B is the same as the configuration of the first power semiconductor element 40A, the same reference numerals are given to the common components and the description thereof is omitted. Also, the bonding structure between each second power semiconductor element 40B and the main mounting portion 14a of the second mounting layer 14A is the same as the bonding structure between each first power semiconductor element 40A and the main mounting portion 13a of the first mounting layer 13A. For this reason, the drain electrode 41 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A. Since the second mounting layer 14A is connected to the output terminals 52A and 52B via the connecting member 90B and the second mounting layer 14B, the drain electrode 41 is electrically connected to the output terminals 52A and 52B via the second mounting layers 14A and 14B and the connecting member 90B. Also, since the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14A, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0063] A second element connection member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as a connection member 30. For this reason, in a plan view, the plurality of second element connection members 31B are arranged at intervals in the horizontal direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second element connection member 31B is formed in a strip shape extending in the vertical direction Y in a plan view. The second element connection member 31B is made of, for example, a thin plate of Cu or a Cu alloy. Further, the second element connection member 31B is connected to the conductive layer 15A. More specifically, the second element connection member 31B is connected to an end portion on the second mounting layer 14A side of the main conductive portion 15a of the conductive layer 15A in the vertical direction Y. Thus, the source electrode 42 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the conductive layer 15A. Since the conductive layer 15A is electrically connected to the second input terminal 51B, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0064] In each second power semiconductor element 40B, the first source electrode 42B and the second drive layer 27 are connected by a second drive side connection member 33B as a connection member 30, and the gate electrode 43 and the second control layer 25 are connected by a second control side connection member 32B as a connection member 30.

[0065] As shown in FIG. 12, a plurality (five in this embodiment) of first power semiconductor elements 40A are arranged as power semiconductor elements 40 in the main mounting portion 13d of the first mounting layer 13B. The plurality of first power semiconductor elements 40A are arranged at intervals in the horizontal direction X (first direction) in a state where they are aligned in the vertical direction Y. Each of the plurality of first power semiconductor elements 40A is arranged at an end portion on the second mounting layer 14B side of the main mounting portion 13d in the vertical direction Y. In the horizontal direction X, the plurality of first power semiconductor elements 40A are not arranged in the terminal side connection portion 13e and the interlayer connection portion 13f.

[0066] The drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first mounting layer 13B. Since the first mounting layer 13B is electrically connected to the first input terminal 51A via the connecting member 90A and the first mounting layer 13A, the drain electrode 41 of each first power semiconductor element 40A is electrically connected to the first input terminal 51A.

[0067] A first element connecting member 31A is connected to the main source electrode 42A of each first power semiconductor element 40A as a connecting member 30. Further, the first element connecting member 31A is connected to the second mounting layer 14B. More specifically, the first element connecting member 31A is connected to the end portion on the first mounting layer 13B side of the second mounting layer 14B in the vertical direction Y. Thus, the source electrode 42 (see FIG. 8) of each first power semiconductor element 40A is electrically connected to the second mounting layer 14B.

[0068] In each first power semiconductor element 40A, the first source electrode 42B and the first driving layer 24 are connected by a first driving side connecting member 33A as a connecting member 30, and the gate electrode 43 and the first control layer 22 are connected by a first control side connecting member 32A as a connecting member 30.

[0069] A plurality (five in this embodiment) of second power semiconductor elements 40B are arranged as power semiconductor elements 40 in the main mounting portion 14c of the second mounting layer 14B. The plurality of second power semiconductor elements 40B are arranged at intervals in the horizontal direction X in a state aligned in the vertical direction Y. Each of the plurality of second power semiconductor elements 40B is arranged at the end portion on the conductive layer 15B side of the main mounting portion 14c in the vertical direction Y. In the horizontal direction X, the plurality of second power semiconductor elements 40B are not arranged in the terminal side connecting portion 14d and the interlayer connecting portion 14e.

[0070] The drain electrode 41 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the second mounting layer 14B. Since the second mounting layer 14B is connected to the output terminals 52A and 52B, the drain electrode 41 is electrically connected to the output terminals 52A and 52B via the second mounting layer 14B. Further, since the drain electrode 41 of each second power semiconductor element 40B is electrically connected to the second mounting layer 14B, the drain electrode 41 is electrically connected to the source electrode 42 of each first power semiconductor element 40A.

[0071] A second element connection member 31B is connected to the main source electrode 42A of each second power semiconductor element 40B as a connection member 30. Further, the second element connection member 31B is connected to the conductive layer 15B. More specifically, the second element connection member 31B is connected to the end portion on the second mounting layer 14B side of the main conductive portion 15d of the conductive layer 15B in the vertical direction Y. In this way, the first element connection member 31A connects the main source electrode 42A of each first power semiconductor element 40A and the second mounting layer 14A. Therefore, the source electrode 42 (see FIG. 8) of each second power semiconductor element 40B is electrically connected to the conductive layer 15B. Since the conductive layer 15B is electrically connected to the second input terminal 51B via the connecting member 90C and the conductive layer 15A, the source electrode 42 of each second power semiconductor element 40B is electrically connected to the second input terminal 51B.

[0072] In each second power semiconductor element 40B, the first source electrode 42B and the second driving layer 28 are connected by a second driving side connection member 33B as a connection member 30, and the gate electrode 43 and the second control layer 26 are connected by a second control side connection member 32B as a connection member 30.

[0073] Next, the shapes of the control layers 21, 22, 25, 26 and the driving layers 23, 24, 27, 28, and the connection structures between the power semiconductor elements 40A, 40B and the control terminals 53A, 53B and the detection terminals 54A, 54B will be described.

[0074] As shown in FIG. 14, the side wall 81A of the case 80 is provided so as to be adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y. For this reason, the first control terminal 53A, the first detection terminal 54A, the power current terminal 55, and the pair of temperature detection terminals 56 provided on the side wall 81A are arranged so as to be adjacent to the first control layer 21, the first drive layer 24, and the thermistor mounting layer 16 in the vertical direction Y, respectively.

[0075] More specifically, the first control terminal 53A and the first detection terminal 54A are arranged on the second substrate 12 side rather than the first control layer 21 and are arranged so as to be adjacent to the first drive layer 24 in the vertical direction Y. When viewed from the vertical direction Y, the first control terminal 53A and the first detection terminal 54A are arranged so as to overlap the second substrate 12, respectively. The first control terminal 53A and the first detection terminal 54A are arranged adjacent to each other in the horizontal direction X. The first control terminal 53A and the first detection terminal 54A are arranged closer to the third substrate side surface 12c of the second substrate 12 in the horizontal direction X. In the horizontal direction X, the first detection terminal 54A is arranged closer to the terminal pedestal 82B side than the first control terminal 53A. The first control terminal 53A and the first control layer 21 are connected by a first control terminal side connection member 35A as a connection member 30. The first detection terminal 54A and the first drive layer 23 are connected by a first detection terminal side connection member 36A as a connection member 30.

[0076] Thus, the gate electrode 43 of each first power semiconductor element 40A of the first substrate 11 is electrically connected to the first control terminal 53A via the first control side connection member 32A, the first control layer 21, and the first control terminal side connection member 35A. Since the first control layer 22 is electrically connected to the first control layer 21 via the first control layer connection member 93A, the gate electrode 43 of each first power semiconductor element 40A of the second substrate 12 is electrically connected to the first control terminal 53A via the first control side connection member 32A, the first control layer 22, the first control layer connection member 93A, the first control layer 21, and the first control terminal side connection member 35A.

[0077] Further, since the first drive layer 23 is electrically connected to the first drive layer 24 via the first drive layer connection member 94A, the source electrode 42 of each first power semiconductor element 40A on the first substrate 11 is electrically connected to the first detection terminal 54A via the first drive side connection member 33A, the first drive layer 24, the first drive layer connection member 94A, the first drive layer 23, and the first detection terminal side connection member 36A. The source electrode 42 of each first power semiconductor element 40A on the second substrate 12 is electrically connected to the first detection terminal 54A via the first drive side connection member 33A, the first drive layer 23, and the first detection terminal side connection member 36A.

[0078] The power current terminal 55 is arranged on the terminal pedestal 82B side of the first control terminal 53A and the first detection terminal 54A in the lateral direction X. The power current terminal 55 is arranged adjacent to the terminal side connection portion 13e of the first mounting layer 13B in the longitudinal direction Y. The power current terminal 55 and the first mounting layer 13B are connected by the power current detection side connection member 34. The power current detection side connection member 34 is connected to the end portion on the first substrate side surface 12a side of the second substrate 12 in the longitudinal direction Y among the terminal side connection portions 13e of the first mounting layer 13B.

[0079] One of the pair of temperature detection terminals 56 is arranged on the third substrate side surface 11c side of the first substrate 11 rather than the first control layer 21, and the other is arranged so as to overlap the end portion on the third substrate side surface 11c side of the first substrate 11 in the first control layer 21 as viewed from the longitudinal direction Y. The pair of temperature detection terminals 56 is arranged adjacent to the thermistor mounting layer 16 in the longitudinal direction Y. The pair of temperature detection terminals 56 and the thermistor mounting layer 16 are connected by the thermistor side connection member 37 as the connection member 30. The thermistor side connection member 37 is composed of two wires formed by wire bonding. One wire connects one region of the pair of regions of the thermistor mounting layer 16 and one of the pair of temperature detection terminals 56. The remaining one wire connects the other region of the pair of regions of the thermistor mounting layer 16 and the other of the pair of temperature detection terminals 56. In this way, the thermistor 17 and the temperature detection terminal 56 are electrically connected by the thermistor side connection member 37.

[0080] As shown in FIG. 15, the first control layer 21 includes a first control-side wiring portion 21a, a first control-side detour portion 21b, a first control-side connection portion 21c, and a first control-side connection portion 21d. In the present embodiment, the first control layer 21 is a single member in which the first control-side wiring portion 21a, the first control-side detour portion 21b, the first control-side connection portion 21c, and the first control-side connection portion 21d are integrally formed. The first control layer 21 is made of, for example, copper foil. The shapes of the first control-side wiring portion 21a, the first control-side detour portion 21b, and the first control-side connection portion 21c in plan view are each strip-shaped.

[0081] The first control-side wiring portion 21a extends along the lateral direction X. The end portion 21e of the first control-side wiring portion 21a on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X is located on the fourth substrate side surface 11d side of the first substrate 11 more than the first power semiconductor element 40Aa, which is the most fourth substrate side surface 11d side among the plurality of first power semiconductor elements 40A, in the lateral direction X. The end portion 21e overlaps with the interlayer connection portion 13c of the first mounting layer 13A when viewed from the longitudinal direction Y. When viewed from the longitudinal direction Y, the first control-side wiring portion 21a extends in the lateral direction X so as to overlap with four first power semiconductor elements 40A other than the first power semiconductor element 40Ab, which is the most third substrate side surface 11c side among the plurality of first power semiconductor elements 40A.

[0082] The first control-side wiring portion 21a is connected to first control-side connection members 32A each connected to a respective one of a plurality of first power semiconductor elements 40A. The plurality of first control-side connection members 32A are arranged spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first control-side connection members 32A connected to the first power semiconductor elements 40A other than the first power semiconductor element 40Ab among the plurality of first power semiconductor elements 40A each extend along the longitudinal direction Y in plan view. The first control-side connection member 32A connected to the first power semiconductor element 40Ab is connected to the first control-side connection portion 21c. Since the gate electrode 43 of the first power semiconductor element 40Ab is located on the third substrate side surface 11c side of the first substrate 11 rather than the first control-side connection portion 21c in the lateral direction X, the first control-side connection member 32A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d of the first substrate 11 as it approaches the first control-side connection portion 21c.

[0083] The first control-side bypass portion 21b is arranged spaced apart from the first control-side wiring portion 21a in the longitudinal direction Y. The first control-side bypass portion 21b is arranged on the side opposite to the first drive layer 23 side with respect to the first control-side wiring portion 21a in the longitudinal direction Y. The first control-side bypass portion 21b extends along the lateral direction X. The length of the first control-side bypass portion 21b in the lateral direction X is longer than the length of the first control-side wiring portion 21a in the lateral direction X. As can be seen from FIG. 15, no first control-side connection member 32A is connected to the first control-side bypass portion 21b. That is, the first control-side connection member 32A is electrically connected to the first control-side bypass portion 21b but not physically in contact.

[0084] The first control-side connection portion 21c connects the first control-side wiring portion 21a and the first control-side detour portion 21b. More specifically, the first control-side connection portion 21c connects the end portion of the first control-side wiring portion 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X and the end portion of the first control-side detour portion 21b on the third substrate side surface 11c side in the lateral direction X. The first control-side connection portion 21c extends in the longitudinal direction Y. When viewed from the longitudinal direction Y, the first control-side connection portion 21c is arranged so as to overlap with the end portion of the first power semiconductor element 40Ab on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X.

[0085] The first control-side connection part 21d is formed at the tip of the first control-side detour part 21b. The first control-side connection part 21d is located on the fourth substrate side surface 11d side of the first substrate 11 rather than the first control-side wiring part 21a in the lateral direction X. The first control-side connection part 21d extends in the longitudinal direction Y. The width dimension of the first control-side connection part 21d (the dimension of the first control-side connection part 21d in the lateral direction X) is larger than the width dimension of the first control-side detour part 21b (the dimension of the first control-side detour part 21b in the longitudinal direction Y). The edge of the first control-side connection part 21d on the first drive layer 23 side in the longitudinal direction Y of the first control-side connection part 21d is separated from the first control-side wiring part 21a in the lateral direction X in a state where it is aligned with the edge of the first control-side wiring part 21a on the first drive layer 23 side in the longitudinal direction Y.

[0086] The first drive layer 23 extends along the lateral direction X. The shape of the first drive layer 23 in plan view is strip-shaped. In the present embodiment, the width dimension of the first drive layer 23 (the dimension of the first drive layer 23 in the longitudinal direction Y) is equal to the width dimension of the first control-side wiring part 21a in the first control layer 21 (the dimension of the first control-side wiring part 21a in the longitudinal direction Y). Also, the width dimension of the first drive layer 23 is equal to the width dimension of the first control-side detour part 21b in the first control layer 21 (the dimension of the first control-side detour part 21b in the longitudinal direction Y).

[0087] Here, if the difference between the dimension of the first driving layer 23 in the vertical direction Y and the dimension of the first control side wiring portion 21a in the first control layer 21 in the vertical direction Y is within 5% of the dimension of the first control side wiring portion 21a in the first control layer 21 in the vertical direction Y, it can be said that the width dimension of the first driving layer 23 is equal to the width dimension of the first control side wiring portion 21a in the first control layer 21. Also, if the difference between the dimension of the first driving layer 23 in the vertical direction Y and the dimension of the first control side detour portion 21b in the first control layer 21 in the vertical direction Y is within 5% of the dimension of the first control side detour portion 21b in the first control layer 21 in the vertical direction Y, it can be said that the width dimension of the first driving layer 23 is equal to the width dimension of the first control side detour portion 21b in the first control layer 21.

[0088] The length of the first driving layer 23 in the horizontal direction X is longer than the length of the first control side wiring portion 21a in the first control layer 21 in the horizontal direction X. Also, the length of the first driving layer 23 in the horizontal direction X is longer than the length of the first control side detour portion 21b in the first control layer 21 in the horizontal direction X. When viewed from the vertical direction Y, the end portion of the first driving layer 23 on the third substrate side surface 11c side of the first substrate 11 in the horizontal direction X is aligned with the first control side connection portion 21c of the first control layer 21. When viewed from the vertical direction Y, the end portion of the first driving layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the horizontal direction X is aligned with the first control side connection portion 21d of the first control layer 21. Also, when viewed from the vertical direction Y, the end portion of the first driving layer 23 on the fourth substrate side surface 11d side of the first substrate 11 and the first control side connection portion 21d of the first control layer 21 are each aligned with the interlayer connection portion 13c of the first mounting layer 13A.

[0089] Connected to the first driving layer 23 are first driving side connection members 33A each connected to a respective one of a plurality of first power semiconductor elements 40A. The plurality of first driving side connection members 33A are arranged spaced apart from each other in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first driving side connection members 33A connected to the plurality of first power semiconductor elements 40A each extend along the vertical direction Y in a plan view.

[0090] As shown in FIG. 16, the first drive layer 24 has a first drive-side wiring portion 24a, a first drive-side detour portion 24b, a first drive-side connection portion 24c, and a first drive-side connection portion 24d. In the present embodiment, the first drive layer 24 is a single member in which the first drive-side wiring portion 24a, the first drive-side detour portion 24b, the first drive-side connection portion 24c, and the first drive-side connection portion 24d are integrally formed. The first drive layer 24 is made of, for example, a copper foil. The shapes of the first drive-side wiring portion 24a, the first drive-side detour portion 24b, and the first drive-side connection portion 24c in plan view are each in a strip shape.

[0091] The first drive-side wiring portion 24a extends along the lateral direction X. An end portion 24e of the first drive-side wiring portion 24a on the third substrate side surface 12c side of the second substrate 12 among the first drive-side wiring portion 24a in the lateral direction X is located on the third substrate side surface 12c side of the second substrate 12 rather than the first power semiconductor element 40Ac closest to the third substrate side surface 12c among the plurality of first power semiconductor elements 40A in the lateral direction X.

[0092] Connected to the first drive-side wiring portion 24a are first drive-side connection members 33A each connected to a respective one of the plurality of first power semiconductor elements 40A. The plurality of first drive-side connection members 33A are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connection members 33A connected to the plurality of first power semiconductor elements 40A each extend along the longitudinal direction Y in plan view.

[0093] The first drive-side detour portion 24b is arranged spaced apart from the first drive-side wiring portion 24a in the longitudinal direction Y. The first drive-side detour portion 24b is arranged on the side opposite to the first drive-side wiring portion 24a side with respect to the first control layer 22 in the longitudinal direction Y. The first drive-side detour portion 24b extends along the lateral direction X. The length of the first drive-side detour portion 24b in the lateral direction X is slightly longer than the length of the first drive-side wiring portion 24a in the lateral direction X. As can be seen from FIG. 16, the first drive-side connection member 33A is not connected to the first drive-side detour portion 24b. That is, the first drive-side connection member 33A is electrically connected to the first drive-side detour portion 24b but is not physically in contact.

[0094] The first drive-side connecting portion 24c connects the first drive-side wiring portion 24a and the first drive-side detour portion 24b. More specifically, the first drive-side connecting portion 24c connects the end portion of the first drive-side wiring portion 24a on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X and the end portion of the first drive-side detour portion 24b on the fourth substrate side surface 12d side in the lateral direction X. The first drive-side connecting portion 24c extends in the longitudinal direction Y. In the lateral direction X, the first drive-side connecting portion 24c is arranged adjacent to the terminal-side connection portion 13e of the first mounting layer 13B. When viewed from the longitudinal direction Y, the first drive-side connecting portion 24c is arranged so as to overlap with the first power semiconductor element 40Ad, which is the first power semiconductor element closest to the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X, among the plurality of first power semiconductor elements 40A.

[0095] The first drive-side connection portion 24d is formed at the tip of the first drive-side detour portion 24b. The first drive-side connection portion 24d is located on the third substrate side surface 12c side of the second substrate 12 rather than the first drive-side wiring portion 24a in the lateral direction X. The first drive-side connection portion 24d extends in the longitudinal direction Y. In the longitudinal direction Y, the first drive-side connection portion 24d is arranged adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the dimension of the first drive-side connection portion 24d in the lateral direction X) is larger than the width dimension of the first drive-side detour portion 24b (the dimension of the first drive-side detour portion 24b in the longitudinal direction Y). The edge of the first drive-side connection portion 24d on the first mounting layer 13B side among the first drive-side connection portions 24d in the longitudinal direction Y is spaced apart from the first drive-side wiring portion 24a in the lateral direction X in a state where it is aligned with the edge of the first drive-side wiring portion 24a on the first mounting layer 13B side in the longitudinal direction Y.

[0096] The first control layer 22 extends along the lateral direction X. The shape of the first control layer 22 in plan view is strip-shaped. In the present embodiment, the width dimension of the first control layer 22 (the dimension in the longitudinal direction Y of the first control layer 22) is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24 (the dimension in the longitudinal direction Y of the first drive-side wiring portion 24a). Also, the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side detour portion 24b in the first drive layer 24 (the dimension in the longitudinal direction Y of the first drive-side detour portion 24b).

[0097] Here, if the difference between the dimension in the longitudinal direction Y of the first control layer 22 and the dimension in the longitudinal direction Y of the first drive-side wiring portion 24a in the first drive layer 24 is within 5% of the dimension in the longitudinal direction Y of the first drive-side wiring portion 24a in the first drive layer 24, for example, it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24. Also, if the difference between the dimension in the longitudinal direction Y of the first control layer 22 and the dimension in the longitudinal direction Y of the first drive-side detour portion 24b in the first drive layer 24 is within 5% of the dimension in the longitudinal direction Y of the first drive-side detour portion 24b in the first drive layer 24, for example, it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side detour portion 24b in the first drive layer 24.

[0098] The length of the first control layer 22 in the lateral direction X is slightly shorter than the length of the first drive-side wiring portion 24a in the first drive layer 24 in the lateral direction X. When viewed from the longitudinal direction Y, the end portion of the first control layer 22 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X is aligned with the end portion 24e of the first drive-side wiring portion 24a of the first drive layer 24. When viewed from the lateral direction X, the first control layer 22 overlaps with the first drive-side connection portion 24d of the first drive layer 24.

[0099] The first control layer 22 is connected to first control-side connection members 32A each connected to a plurality of first power semiconductor elements 40A on the second substrate 12. The plurality of first control-side connection members 32A are arranged at intervals in the lateral direction X which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. Among the plurality of first power semiconductor elements 40A, the first control-side connection members 32A connected to the four first power semiconductor elements 40A other than the first power semiconductor element 40Ad disposed closest to the fourth substrate side surface 12d of the second substrate 12 each extend along the longitudinal direction Y in a plan view. Since the gate electrode 43 of the first power semiconductor element 40Ad is disposed on the fourth substrate side surface 12d side of the second substrate 12 rather than the first control layer 22, the first control-side connection member 32A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c as it goes toward the first substrate side surface 12a of the second substrate 12.

[0100] As shown in FIGS. 14 to 16, a first control terminal-side connection member 35A and a first control layer connection member 93A are respectively connected to the first control-side connection portion 21d. More specifically, the first control terminal-side connection member 35A is connected to the end portion on the first substrate side surface 11a side of the first substrate 11 in the longitudinal direction Y of the first control-side connection portion 21d.

[0101] The first control layer connection member 93A is connected to the end portion on the first drive layer 23 side in the longitudinal direction Y of the first control-side connection portion 21d. Also, the first control layer connection member 93A is connected to the end portion on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X of the first control layer 22. In a plan view, the first control layer connection member 93A extends along the lateral direction X. As can be seen from FIG. 16, the first control layer connection member 93A is formed so as to straddle the first drive-side connection portion 24d of the first drive layer 24 in the lateral direction X.

[0102] The first drive-side connection portion 24d is connected to a first detection terminal-side connection member 36A and a first drive layer connection member 94A, respectively. More specifically, the first detection terminal-side connection member 36A is connected to an end portion of the first drive-side connection portion 24d in the longitudinal direction Y on the first substrate side surface 12a side of the second substrate 12.

[0103] A first drive layer connection member 94A is connected to an end portion of the first drive layer 23 in the lateral direction X on the fourth substrate side surface 11d side of the first substrate 11. The first drive layer connection member 94A is connected to an end portion of the first drive-side connection portion 24d in the longitudinal direction Y on the first mounting layer 13B side. In a plan view, the first drive layer connection member 94A extends along the lateral direction X.

[0104] As shown in FIG. 17, the side wall 81B of the case 80 is provided so as to be adjacent to the second control layer 26 and the second drive layer 27 in the longitudinal direction Y. Therefore, the second control terminal 53B and the second detection terminal 54B provided on the side wall 81B are arranged so as to be adjacent to the second control layer 26 and the second drive layer 27 in the longitudinal direction Y, respectively.

[0105] More specifically, the second control terminal 53B and the second detection terminal 54B are respectively arranged closer to the first substrate 11 than the second control layer 26 and are arranged so as to be adjacent to the second drive layer 27 in the longitudinal direction Y. When viewed from the longitudinal direction Y, the second control terminal 53B and the second detection terminal 54B are respectively arranged so as to overlap the first substrate 11. The second control terminal 53B and the second detection terminal 54B are arranged adjacent to each other in the lateral direction X. The second control terminal 53B and the second detection terminal 54B are arranged closer to the fourth substrate side surface 11d of the first substrate 11 in the lateral direction X. In the lateral direction X, the second detection terminal 54B is arranged closer to the terminal pedestal 82A than the second control terminal 53B. The second control terminal 53B and the second control layer 26 are connected by a second control terminal-side connection member 35B as a connection member 30. The second detection terminal 54B and the second drive layer 27 are connected by a second detection terminal-side connection member 36B as a connection member 30.

[0106] Thus, since the second control layer 25 is electrically connected to the second control layer 26 via the second control layer connection member 93B, the gate electrodes 43 of the second power semiconductor elements 40B on the first substrate 11 are electrically connected to the second control terminal 53B via the second control side connection member 32B, the second control layer 25, the second control layer connection member 93B, the second control layer 26, and the second control terminal side connection member 35B. The gate electrodes 43 of the second power semiconductor elements 40B on the second substrate 12 are electrically connected to the first control terminal 53A via the second control side connection member 32B, the second control layer 26, and the second control terminal side connection member 35B.

[0107] Also, the source electrodes 42 of the second power semiconductor elements 40B on the first substrate 11 are electrically connected to the second detection terminal 54B via the second drive side connection member 33B, the second drive layer 27, and the second detection terminal side connection member 36B. Further, since the second drive layer 28 is electrically connected to the second drive layer 27 via the second drive layer connection member 94B, the source electrodes 42 of the second power semiconductor elements 40B on the second substrate 12 are electrically connected to the second detection terminal 54B via the second drive side connection member 33B, the second drive layer 27, the second drive layer connection member 94B, the second drive layer 28, and the second detection terminal side connection member 36B.

[0108] As shown in FIG. 18, the second drive layer 27 has a second drive side wiring portion 27a, a second drive side detour portion 27b, a second drive side connection portion 27c, and a second drive side connection portion 27d. In the present embodiment, the second drive layer 27 is a single member in which the second drive side wiring portion 27a, the second drive side detour portion 27b, the second drive side connection portion 27c, and the second drive side connection portion 27d are integrally formed. The second drive layer 27 is made of, for example, copper foil. The shapes of the second drive side wiring portion 27a, the second drive side detour portion 27b, and the second drive side connection portion 27c in plan view are each strip-shaped.

[0109] The second drive-side wiring portion 27a extends along the horizontal direction X. In the vertical direction Y, the second drive-side wiring portion 27a is arranged adjacent to the conductive layer 15A. Among the ends 27e of the second drive-side wiring portion 27a on the fourth substrate side surface 11d side of the first substrate 11 in the horizontal direction X, in the horizontal direction X, it is located on the fourth substrate side surface 11d side of the first substrate 11 further than the second power semiconductor element 40Ba which is the closest to the fourth substrate side surface 11d among the plurality of second power semiconductor elements 40B. As viewed from the vertical direction Y, the second drive-side wiring portion 27a extends in the horizontal direction X so as to overlap all the second power semiconductor elements 40B arranged on the first substrate 11.

[0110] Connected to the second drive-side wiring portion 27a are second drive-side connection members 33B each connected to a respective one of the plurality of second power semiconductor elements 40B. The plurality of second drive-side connection members 33B are arranged spaced apart from each other in the horizontal direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second drive-side connection members 33B connected to the plurality of second power semiconductor elements 40B each extend along the vertical direction Y in a plan view.

[0111] The second drive-side bypass portion 27b is arranged spaced apart from the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side bypass portion 27b is arranged on the side opposite to the second drive-side wiring portion 27a side with respect to the second control layer 25 in the vertical direction Y. The second drive-side bypass portion 27b is arranged on the second substrate side surface 11b side of the first substrate 11 further than the second control layer 25 in the vertical direction Y. In the vertical direction Y, the second drive-side bypass portion 27b is arranged adjacent to the second substrate side surface 11b of the first substrate 11. The second drive-side bypass portion 27b extends along the horizontal direction X. The length of the second drive-side bypass portion 27b in the horizontal direction X is slightly longer than the length of the second drive-side wiring portion 27a in the horizontal direction X. As can be seen from FIG. 18, the second drive-side connection member 33B is not connected to the second drive-side bypass portion 27b. That is, the second drive-side connection member 33B is electrically connected to the second drive-side bypass portion 27b but is not physically in contact.

[0112] The second drive-side connection portion 27c connects the second drive-side wiring portion 27a and the second drive-side bypass portion 27b. More specifically, the second drive-side connection portion 27c connects the end portion of the second drive-side wiring portion 27a on the side of the third substrate side surface 11c of the first substrate 11 in the lateral direction X and the end portion of the second drive-side bypass portion 27b on the side of the third substrate side surface 11c in the lateral direction X. The second drive-side connection portion 27c extends in the longitudinal direction Y. When viewed from the longitudinal direction Y, the second drive-side connection portion 27c is arranged so as to overlap with the end portion of the second power semiconductor element 40Bb, which is the closest to the third substrate side surface 11c among the second power semiconductor elements 40B, on the side of the third substrate side surface 11c of the first substrate 11 in the lateral direction X.

[0113] The second drive-side connection portion 27d is formed at the tip of the second drive-side bypass portion 27b. The second drive-side connection portion 27d is located on the side of the fourth substrate side surface 11d of the first substrate 11 rather than the second drive-side wiring portion 27a in the lateral direction X. The second drive-side connection portion 27d extends in the longitudinal direction Y. The width dimension of the second drive-side connection portion 27d (the dimension in the lateral direction X of the second drive-side connection portion 27d) is larger than the width dimension of the second drive-side bypass portion 27b (the dimension in the longitudinal direction Y of the second drive-side bypass portion 27b). The edge of the second drive-side connection portion 27d on the side of the conductive layer 15A in the longitudinal direction Y is arranged to be separated from the second drive-side wiring portion 27a in the lateral direction X in a state where it is aligned with the edge of the second drive-side wiring portion 27a on the side of the conductive layer 15A in the longitudinal direction Y.

[0114] The second control layer 25 extends along the lateral direction X. The shape of the second control layer 25 in plan view is strip-shaped. In the present embodiment, the width dimension of the second control layer 25 (the dimension in the longitudinal direction Y of the second control layer 25) is equal to the width dimension of the second drive-side wiring portion 27a in the second drive layer 27 (the dimension in the longitudinal direction Y of the second drive-side wiring portion 27a). Also, the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side bypass portion 27b in the second drive layer 27 (the dimension in the longitudinal direction Y of the second drive-side bypass portion 27b).

[0115] Here, if the difference between the dimension of the second control layer 25 in the vertical direction Y and the dimension of the second drive-side wiring portion 27a in the second drive layer 27 in the vertical direction Y is within 5% of the dimension of the second drive-side wiring portion 27a in the vertical direction Y in the second drive layer 27, for example, it can be said that the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side wiring portion 27a in the second drive layer 27. Further, if the difference between the dimension of the second control layer 25 in the vertical direction Y and the dimension of the second drive-side detour portion 27b in the second drive layer 27 in the vertical direction Y is within 5% of the dimension of the second drive-side detour portion 27b in the vertical direction Y in the second drive layer 27, for example, it can be said that the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side detour portion 27b in the second drive layer 27.

[0116] The length of the second control layer 25 in the horizontal direction X is slightly shorter than the length of the second drive-side wiring portion 27a in the second drive layer 27 in the horizontal direction X. When viewed from the vertical direction Y, the end portion 25x on the fourth substrate side surface 11d side of the first substrate 11 of the second control layer 25 in the horizontal direction X is aligned with the end portion 27e of the second drive-side wiring portion 27a of the second drive layer 27.

[0117] Second control-side connection members 32B connected to respective ones of the plurality of second power semiconductor elements 40B are connected to the second control layer 25. The plurality of second control-side connection members 32B are arranged to be spaced apart from each other in the horizontal direction X, which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control-side connection members 32B connected to the plurality of second power semiconductor elements 40B each extend along the vertical direction Y in a plan view. A first drive-layer connection member 94A is connected to the end portion on the fourth substrate side surface 11d side of the first substrate 11 of the first drive layer 23 in the horizontal direction X.

[0118] As shown in FIG. 19, the second control layer 26 has a second control-side wiring portion 26a, a second control-side detour portion 26b, a second control-side connection portion 26c, and a second control-side connection portion 26d. In the present embodiment, the second control layer 26 is a single member in which the second control-side wiring portion 26a, the second control-side detour portion 26b, the second control-side connection portion 26c, and the second control-side connection portion 26d are integrally formed. The second control layer 26 is made of, for example, copper foil. The shapes of the second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side connection portion 26c in plan view are each strip-shaped.

[0119] The second control-side wiring portion 26a extends along the lateral direction X. An end portion 26e of the second control-side wiring portion 26a on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X is located on the third substrate side surface 12c side of the second substrate 12 further than the second power semiconductor element 40Bc which is the closest to the third substrate side surface 12c side among the plurality of second power semiconductor elements 40B in the lateral direction X.

[0120] Connected to the second control-side wiring portion 26a are second control-side connection members 32B each connected to a respective one of the plurality of second power semiconductor elements 40B. The plurality of second control-side connection members 32B are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control-side connection members 32B connected to the plurality of second power semiconductor elements 40B each extend along the longitudinal direction Y in plan view.

[0121] The second control-side detour portion 26b is arranged at a distance from the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is arranged on the side opposite to the second drive layer 28 side with respect to the second control-side wiring portion 26a in the vertical direction Y. The second control-side detour portion 26b is arranged so as to be adjacent to the second substrate side surface 12b of the second substrate 12 in the vertical direction Y. The second control-side detour portion 26b extends along the horizontal direction X. The length of the second control-side detour portion 26b in the horizontal direction X is slightly longer than the length of the second control-side wiring portion 26a in the horizontal direction X. As can be seen from FIG. 19, the second control-side connection member 32B is not connected to the second control-side detour portion 26b. That is, the second control-side connection member 32B is electrically connected to the second control-side detour portion 26b but is not physically in contact.

[0122] The second control-side connecting portion 26c connects the second control-side wiring portion 26a and the second control-side detour portion 26b. More specifically, the second control-side connecting portion 26c connects the end portion of the second control-side wiring portion 26a on the fourth substrate side surface 12d side of the second substrate 12 in the horizontal direction X and the end portion of the second control-side detour portion 26b on the fourth substrate side surface 12d side in the horizontal direction X. The second control-side connecting portion 26c extends in the vertical direction Y. In the horizontal direction X, the second control-side connecting portion 26c is arranged so as to be adjacent to the terminal-side connection portion 14d of the second mounting layer 14B. When viewed from the vertical direction Y, the second control-side connecting portion 26c is arranged so as to overlap with the second power semiconductor element 40Bd, which is the second power semiconductor element closest to the fourth substrate side surface 12d side of the second substrate 12 in the horizontal direction X, among the plurality of second power semiconductor elements 40B.

[0123] The second control-side connection portion 26d is formed at the tip of the second control-side bypass portion 26b. In the lateral direction X, the second control-side connection portion 26d is located closer to the third substrate side surface 12c of the second substrate 12 than the second control-side wiring portion 26a. The second control-side connection portion 26d extends in the longitudinal direction Y. In the longitudinal direction Y, the second control-side connection portion 26d is arranged adjacent to the second drive layer 28. The width dimension of the second control-side connection portion 26d (the dimension of the second control-side connection portion 26d in the lateral direction X) is larger than the width dimension of the second control-side bypass portion 26b (the dimension of the second control-side bypass portion 26b in the longitudinal direction Y). The edge of the second control-side connection portion 26d on the second drive layer 28 side among the second control-side connection portions 26d in the longitudinal direction Y is spaced apart from the second control-side wiring portion 26a in the lateral direction X in a state where it is aligned with the edge of the second control-side wiring portion 26a on the second drive layer 28 side in the longitudinal direction Y.

[0124] The second drive layer 28 extends along the lateral direction X. The shape of the second drive layer 28 in plan view is strip-shaped. In the present embodiment, the width dimension of the second drive layer 28 (the dimension of the second drive layer 28 in the longitudinal direction Y) is equal to the width dimension of the second control-side wiring portion 26a in the second control layer 26 (the dimension of the second control-side wiring portion 26a in the longitudinal direction Y). Also, the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side bypass portion 26b in the second control layer 26 (the dimension of the second control-side bypass portion 26b in the longitudinal direction Y).

[0125] Here, if the difference between the dimension of the second drive layer 28 in the longitudinal direction Y and the dimension of the second control-side wiring portion 26a in the second control layer 26 in the longitudinal direction Y is, for example, within 5% of the dimension of the second control-side wiring portion 26a in the second control layer 26 in the longitudinal direction Y, it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side wiring portion 26a in the second control layer 26. Also, if the difference between the dimension of the second drive layer 28 in the longitudinal direction Y and the dimension of the second control-side bypass portion 26b in the second control layer 26 in the longitudinal direction Y is, for example, within 5% of the dimension of the second control-side bypass portion 26b in the second control layer 26 in the longitudinal direction Y, it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side bypass portion 26b in the second control layer 26.

[0126] The length of the second driving layer 28 in the lateral direction X is longer than the length of the second control side wiring portion 26a in the second control layer 26 in the lateral direction X. When viewed from the longitudinal direction Y, the end portion of the second driving layer 28 on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X is aligned with the second control side connecting portion 26c of the second control layer 26. When viewed from the longitudinal direction Y, the end portion of the second driving layer 28 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X is aligned with the second control side connection portion 26d of the second control layer 26.

[0127] Connected to the second driving layer 28 are second driving side connection members 33B each connected to a respective one of a plurality of second power semiconductor elements 40B of the second substrate 12. The plurality of second driving side connection members 33B are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second driving side connection members 33B connected to the plurality of second power semiconductor elements 40B extend along the longitudinal direction Y in plan view.

[0128] As shown in FIGS. 17 to 19, connected to the second driving side detour portion 27b is a second detection terminal side connection member 36B. More specifically, the second detection terminal side connection member 36B is connected to the end portion of the second driving side detour portion 27b on the second driving side connection portion 27d side.

[0129] Connected to the second driving side connection portion 27d are second driving layer connection members 94B respectively. More specifically, the second driving layer connection member 94B is connected to the end portion of the second driving side connection portion 27d in the longitudinal direction Y on the conductive layer 15A side. Also, the second driving layer connection member 94B is connected to the end portion of the second driving layer 28 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X. In plan view, the second driving layer connection member 94B extends along the lateral direction X.

[0130] At the end 25x on the side of the fourth substrate side surface 11d of the first substrate 11 in the second control layer 25, a second control layer connection member 93B is connected. Also, the second control layer connection member 93B is connected to the second control side connection portion 26d of the second control layer 26. The second control layer connection member 93B is connected to the end on the side of the second drive layer 28 among the second control side connection portions 26d in the vertical direction Y. In a plan view, the second control layer connection member 93B extends along the lateral direction X. Also, as shown in FIG. 18, the second control layer connection member 93B is formed so as to straddle the second drive side connection portion 27d of the second drive layer 27 in the lateral direction X.

[0131] A second control terminal side connection member 35B is connected to the second control side connection portion 26d. More specifically, the second control terminal side connection member 35B is connected to the end on the side of the second substrate side surface 12b of the second substrate 12 among the second control side connection portions 26d in the vertical direction Y.

[0132] As shown in FIGS. 11 to 19, each control side connection member 32A, 32B, each drive side connection member 33A, 33B, the power current detection side connection member 34, each control terminal side connection member 35A, 35B, each detection terminal side connection member 36A, 36B, the thermistor side connection member 37, each control layer connection member 93A, 93B, and each drive layer connection member 94A, 94B are each a wire made of Au (gold), an Au alloy, Al, an Al alloy, Cu, or a Cu alloy.

[0133] (Conductive path) Next, a control side conductive path, which is a first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and a drive side conductive path, which is a second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B, will be described.

[0134] As shown in FIG. 14, the first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first control terminal 53A is constituted by the first control-side connection member 32A, the first control layer 21, and the first control-terminal-side connection member 35A. Therefore, the first control-side conductive path for the plurality of first power semiconductor elements 40A on the first substrate 11 becomes longer in order from the first power semiconductor element 40Ab toward the first power semiconductor element 40Aa. In other words, the difference in the lengths of the first control-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the first power semiconductor element 40A among the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Aa, is the longest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0135] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first detection terminal 54A is constituted by the first drive-side connection member 33A, the first drive layer 23, the first drive-layer connection member 94A, the first drive-side connection portion 24d of the first drive layer 24, and the first detection-terminal-side connection member 36A. Therefore, the first drive-side conductive path for the plurality of first power semiconductor elements 40A on the first substrate 11 becomes longer in order from the first power semiconductor element 40Aa toward the first power semiconductor element 40Ab. In other words, the difference in the lengths of the first drive-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the first power semiconductor element 40A among the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0136] The first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first control terminal 53A is constituted by a first control-side connection member 32A, a first control layer 22, a first control layer connection member 93A, a first control-side connection portion 21d of the first control layer 21, and a first control terminal-side connection member 35A. Therefore, the first control-side conductive paths for the plurality of first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac toward the first power semiconductor element 40Ad. In other words, the difference in the lengths of the first control-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ad, is the longest.

[0137] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first detection terminal 54A is constituted by a first drive-side connection member 33A, a first drive layer 24, and a first detection terminal-side connection member 36A. Therefore, the first drive-side conductive paths for the plurality of first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ad toward the first power semiconductor element 40Ac. In other words, the difference in the lengths of the first drive-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the longest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the shortest.

[0138] Thus, in this embodiment, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation among the lengths of the plurality of first power semiconductor elements 40A in the total length of the length of the first control-side conductive path and the length of the first drive-side conductive path. That is, the power module 1A of this embodiment is configured such that, by the first control-side bypass portion 21b and the first drive-side bypass portion 24b, the sum of the length of the first control-side conductive path, which is an example of the first conductive path, and the length of the first drive-side conductive path, which is an example of the second conductive path, approaches each other among the plurality of first power semiconductor elements 40A.

[0139] Also, in this embodiment, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation between the total length of the length of the first end control-side conductive path and the length of the first end drive-side conductive path and the total length of the length of the second end control-side conductive path and the length of the second end drive-side conductive path.

[0140] Note that the total length of the length of the first end control-side conductive path and the length of the first end drive-side conductive path is an example of the first sum described in the claims. Also, the total length of the length of the second end control-side conductive path and the length of the second end drive-side conductive path is an example of the second sum described in the claims. Therefore, the power module 1A of this embodiment is configured such that, by the first control-side bypass portion 21b and the first drive-side bypass portion 24b, the first sum and the second sum approach each other.

[0141] As shown in FIG. 17, the second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminal 53B is composed of a second control-side connection member 32B, a second control layer 25, a second control layer connection member 93B, a second control-side connection portion 26d of the second control layer 26, and a second control terminal-side connection member 35B. Therefore, the second control-side conductive path, which is an example of the third conductive path related to the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in the length of the second control-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bb, is the longest.

[0142] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminal 54B is composed of a second drive-side connection member 33B, a second drive layer 27, and a second detection terminal-side connection member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path related to the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in order from the second power semiconductor element 40Bb to the second power semiconductor element 40Ba. In other words, the difference in the length of the second drive-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Ba, is the longest, and the length of the fourth end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bb, is the shortest.

[0143] The second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminal 53B is constituted by the second control-side connection member 32B, the second control layer 26, and the second control-terminal-side connection member 35B. Therefore, the second control-side conductive path, which is an example of the third conductive path regarding the plurality of second power semiconductor elements 40B on the second substrate 12, becomes longer in order from the second power semiconductor element 40Bd toward the second power semiconductor element 40Bc. In other words, the difference in the lengths of the second control-side conductive paths regarding the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bc, is the longest, and the length of the fourth-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0144] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second detection terminal 54B is constituted by the second drive-side connection member 33B, the second drive layer 28, the second drive-layer connection member 94B, the second drive-side connection portion 27d of the second drive layer 27, and the second detection-terminal-side connection member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path regarding the plurality of second power semiconductor elements 40B on the second substrate 12, becomes longer in order from the second power semiconductor element 40Bc toward the second power semiconductor element 40Bd. In other words, the difference in the lengths of the second drive-side conductive paths regarding the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bd, is the longest.

[0145] Thus, in this embodiment, the second control-side detour portion 26b and the second drive-side detour portion 27b are respectively formed so as to reduce the variation among the lengths of the second power semiconductor elements 40B in the total length of the length of the second control-side conductive path and the length of the second drive-side conductive path. That is, the power module 1A of this embodiment is configured such that, by the second control-side detour portion 26b and the second drive-side detour portion 27b, the sum of the length of the second control-side conductive path, which is an example of the third conductive path, and the length of the second drive-side conductive path, which is an example of the fourth conductive path, approaches each other among the plurality of second power semiconductor elements 40B.

[0146] Also, in this embodiment, the first control-side detour portion 21b and the first drive-side detour portion 24b are respectively formed so as to reduce the variation between the total length of the length of the third-end control-side conductive path and the length of the third-end drive-side conductive path and the total length of the length of the fourth-end control-side conductive path and the length of the fourth-end drive-side conductive path.

[0147] Note that the total length of the length of the third-end control-side conductive path and the length of the third-end drive-side conductive path is an example of the third sum described in the claims. Also, the total length of the length of the fourth-end control-side conductive path and the length of the fourth-end drive-side conductive path is an example of the fourth sum described in the claims. For this reason, the power module 1A of this embodiment is configured such that, by the second control-side detour portion 26b and the second drive-side detour portion 27b, the third sum and the fourth sum approach each other.

[0148] (Operation) The operation of the power module 1A of this embodiment will be described. Note that FIG. 20 shows the internal structure of the power module 1X of the comparative example. In FIG. 20, for convenience, the case 80 is shown omitted. First, the configuration of the power module 1X of the comparative example will be described below.

[0149] As shown in FIG. 20, the power module 1X has a different configuration of each control layer and each drive layer compared to the power module 1A of the present embodiment. For convenience, in the power module 1X, an "X" is appended after the symbol for each control layer and each drive layer corresponding to each control layer 21, 22, 25, 26 and each drive layer 23, 24, 27, 28 of the power module 1A.

[0150] As shown in FIG. 21, the first control layer 21X and the first drive layer 23X are arranged spaced apart in the vertical direction Y. The first drive layer 23X is arranged on the first mounting layer 13A side with respect to the first control layer 21X. Both the first control layer 21X and the first drive layer 23X extend in the horizontal direction X. The first control layer 21X and the first control terminal 53A are electrically connected by a first control terminal side connection member 35A. The first control layer 21X and each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A on the first substrate 11 are electrically connected by a first control side connection member 32A. The first drive layer 23X and each of the source electrodes 42 of the plurality of first power semiconductor elements 40A on the first substrate 11 are electrically connected by a first drive side connection member 33A.

[0151] The first control layer 22X and the first drive layer 24X are arranged spaced apart in the vertical direction Y. The first drive layer 24X is arranged on the first mounting layer 13B side with respect to the first control layer 22X. Both the first control layer 22X and the first drive layer 24X extend in the horizontal direction X. The first control layer 22X and the first control layer 21X are electrically connected by a first control layer connection member 93A. The first drive layer 24X and the first drive layer 23X are electrically connected by a first drive layer connection member 94A. The first drive layer 24X and the first detection terminal 54A are electrically connected by a first detection terminal side connection member 36A. The first control layer 22X and each of the gate electrodes 43 of the plurality of first power semiconductor elements 40A on the second substrate 12 are electrically connected by a first control side connection member 32A. The first drive layer 24X and each of the source electrodes 42 of the plurality of first power semiconductor elements 40A on the second substrate 12 are electrically connected by a first drive side connection member 33A.

[0152] The first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first control terminal 53A is constituted by the first control-side connection member 32A, the first control layer 21X, and the first control-terminal-side connection member 35A. Therefore, the first control-side conductive paths for the plurality of first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa toward the first power semiconductor element 40Ab. In other words, the difference in the lengths of the first control-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the array direction (lateral direction X) of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0153] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first detection terminal 54A is constituted by the first drive-side connection member 33A, the first drive layer 23X, the first drive-layer connection member 94A, the first drive layer 24X, and the first detection-terminal-side connection member 36A. Therefore, the first drive-side conductive paths for the plurality of first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa toward the first power semiconductor element 40Ab. In other words, the difference in the lengths of the first drive-side conductive paths for the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the array direction (lateral direction X) of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0154] The first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first control terminal 53A is constituted by the first control-side connection member 32A, the first control layer 22X, the first control layer connection member 93A, the first control layer 21X, and the first control terminal-side connection member 35A. Therefore, the first control-side conductive paths for the plurality of first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad. In other words, the difference in the lengths of the first control-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the first power semiconductor element 40A among the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ad, is the longest.

[0155] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first detection terminal 54A is constituted by the first drive-side connection member 33A, the first drive layer 24X, and the first detection terminal-side connection member 36A. Therefore, the first drive-side conductive paths for the plurality of first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad. In other words, the difference in the lengths of the first drive-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the first power semiconductor element 40A among the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the longest.

[0156] Thus, in the power module 1X, since both the first control-side conductive paths and the first drive-side conductive paths of the plurality of first power semiconductor elements 40A on the first substrate 11 become longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab, the total variation between the first control-side conductive paths and the first drive-side conductive paths in the plurality of first power semiconductor elements 40A on the first substrate 11 is large. In particular, the length of the first control-side conductive path of the first power semiconductor element 40Aa is the shortest, and the length of the first drive-side conductive path of the first power semiconductor element 40Aa is the shortest. The length of the first control-side conductive path of the first power semiconductor element 40Ab is the longest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ab is the longest. For this reason, the variation between the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Aa and the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Ab is large.

[0157] Also, since both the first control-side conductive paths and the first drive-side conductive paths of the plurality of first power semiconductor elements 40A on the second substrate 12 become longer in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad, the total variation between the first control-side conductive paths and the first drive-side conductive paths in the plurality of first power semiconductor elements 40A on the second substrate 12 is large. In particular, the length of the first control-side conductive path of the first power semiconductor element 40Ac is the shortest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ac is the shortest. The length of the first control-side conductive path of the first power semiconductor element 40Ad is the longest, and the length of the first drive-side conductive path of the first power semiconductor element 40Ad is the longest. For this reason, the variation between the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Ac and the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path in the first power semiconductor element 40Ad is large.

[0158] As shown in FIG. 22, the second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminal 53B is constituted by the second control-side connection member 32B, the second control layer 25X, the second control layer connection member 93B, the second control layer 26X, and the second control terminal-side connection member 35B. Therefore, the second control-side conductive path for the plurality of second power semiconductor elements 40B on the first substrate 11 becomes longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in the length of the second control-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bb, is the longest.

[0159] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminal 54B is constituted by the second drive-side connection member 33B, the second drive layer 27X, and the second detection terminal-side connection member 36B. Therefore, the second drive-side conductive path for the plurality of second power semiconductor elements 40B on the first substrate 11 becomes longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in the length of the second drive-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bb, is the longest.

[0160] The second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminal 53B is constituted by the second control-side connection member 32B, the second control layer 26X, and the second control-terminal-side connection member 35B. Therefore, the second control-side conductive path for the plurality of second power semiconductor elements 40B on the second substrate 12 becomes longer in order from the second power semiconductor element 40Bc toward the second power semiconductor element 40Bd. In other words, the difference in the lengths of the second control-side conductive paths for the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the array direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bd, is the longest.

[0161] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second detection terminal 54B is constituted by the second drive-side connection member 33B, the second drive layer 28X, the second drive-layer connection member 94B, the second drive layer 27X, and the second detection-terminal-side connection member 36B. Therefore, the second drive-side conductive path for the plurality of second power semiconductor elements 40B on the second substrate 12 becomes longer in order from the second power semiconductor element 40Bc toward the second power semiconductor element 40Bd. In other words, the difference in the lengths of the second drive-side conductive paths for the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the array direction (lateral direction X) of the second power semiconductor element 40B among the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bd, is the longest.

[0162] Thus, in the power module 1X, since both the second control-side conductive paths and the second drive-side conductive paths of the plurality of second power semiconductor elements 40B on the first substrate 11 become longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb, the variation in the total length of the conductive paths, which is the sum of the second control-side conductive paths and the second drive-side conductive paths of the plurality of second power semiconductor elements 40B on the first substrate 11, is large. In particular, the length of the second control-side conductive path of the second power semiconductor element 40Ba is the shortest, and the length of the second drive-side conductive path of the second power semiconductor element 40Ba is the shortest. The length of the second control-side conductive path of the second power semiconductor element 40Bb is the longest, and the length of the second drive-side conductive path of the second power semiconductor element 40Bb is the longest. For this reason, the variation between the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Ba and the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bb is large.

[0163] Also, since both the second control-side conductive paths and the second drive-side conductive paths of the plurality of second power semiconductor elements 40B on the second substrate 12 become longer in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd, the variation in the total length of the conductive paths, which is the sum of the second control-side conductive paths and the second drive-side conductive paths of the plurality of second power semiconductor elements 40B on the second substrate 12, is large. In particular, the length of the second control-side conductive path of the second power semiconductor element 40Bc is the shortest, and the length of the second drive-side conductive path of the second power semiconductor element 40Bc is the shortest. The length of the second control-side conductive path of the second power semiconductor element 40Bd is the longest, and the length of the second drive-side conductive path of the second power semiconductor element 40Bd is the longest. For this reason, the variation between the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bc and the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path in the second power semiconductor element 40Bd is large.

[0164] As a result, as shown in FIG. 23, the total inductance value between the first power semiconductor element 40A and the first control terminal 53A and the inductance value between the first power semiconductor element 40A and the first detection terminal 54A in each first power semiconductor element 40A vary. As can be seen from FIG. 23, among the plurality of first power semiconductor elements 40A mounted on the first mounting layer 13A, the inductance value of the first power semiconductor element 40Aa is the smallest, and the inductance value of the first power semiconductor element 40Ab is the largest. That is, the variation between the inductance value of the first power semiconductor element 40Aa and the inductance value of the first power semiconductor element 40Ab is the largest. Among the plurality of first power semiconductor elements 40A mounted on the first mounting layer 13B, the inductance value of the first power semiconductor element 40Ac is the smallest, and the inductance value of the first power semiconductor element 40Ad is the largest. That is, the variation between the inductance value of the first power semiconductor element 40Ac and the inductance value of the first power semiconductor element 40Ad is the largest.

[0165] Also, the total inductance value between the second power semiconductor element 40B and the second control terminal 53B and the inductance value between the second power semiconductor element 40B and the second detection terminal 54B in each second power semiconductor element 40B vary. As can be seen from FIG. 23, among the plurality of second power semiconductor elements 40B mounted on the second mounting layer 14A, the inductance value of the second power semiconductor element 40Ba is the smallest, and the inductance value of the second power semiconductor element 40Bb is the largest. That is, the variation between the inductance value of the second power semiconductor element 40Ba and the inductance value of the second power semiconductor element 40Bb is the largest. Among the plurality of second power semiconductor elements 40B mounted on the second mounting layer 14B, the inductance value of the second power semiconductor element 40Bc is the smallest, and the inductance value of the second power semiconductor element 40Bd is the largest. That is, the variation between the inductance value of the second power semiconductor element 40Bc and the inductance value of the second power semiconductor element 40Bd is the largest.

[0166] Accordingly, when applying the gate voltage Vg to each of the first power semiconductor elements 40A and each of the second power semiconductor elements 40B, the waveform of the gate voltage Vg may fluctuate due to variations in the inductance value. In particular, in the power module 1X, when high-speed switching is performed using SiCMOSFETs as the first power semiconductor elements 40A and the second power semiconductor elements 40B, ringing may occur as shown in FIG. 24.

[0167] In view of such points, in the present embodiment, as described above, in the plurality of first power semiconductor elements 40A, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation in the total length of the first control-side conductive path and the first drive-side conductive path. Further, in the plurality of second power semiconductor elements 40B, the second control-side bypass portion 26b and the second drive-side bypass portion 27b are respectively formed so as to reduce the variation in the total length of the second control-side conductive path and the second drive-side conductive path. For this reason, as shown in FIG. 23, the variation in the total inductance value between the inductance value between the first power semiconductor element 40A and the first control terminal 53A and the inductance value between the first power semiconductor element 40A and the first detection terminal 54A in each first power semiconductor element 40A is reduced. Further, the variation in the total inductance value between the inductance value between the second power semiconductor element 40B and the second control terminal 53B and the inductance value between the second power semiconductor element 40B and the second detection terminal 54B in each second power semiconductor element 40B is reduced. Thereby, even when high-speed switching is performed using SiCMOSFETs as the first power semiconductor elements 40A and the second power semiconductor elements 40B in the power module 1A of the present embodiment, the occurrence of ringing can be suppressed as shown in FIG. 25.

[0168] (Effect) According to the power module 1A of the present embodiment, the following effects can be obtained. (1-1) The first control layer 21 has a first control-side bypass portion 21b, and the first drive layer 24 has a first drive-side bypass portion 24b. Therefore, the variation in the total length of the first control-side conductive path and the first drive-side conductive path regarding the plurality of first power semiconductor elements 40A can be suppressed, and thus the variation in the inductance value due to these lengths can be suppressed. Accordingly, the generation of ringing in the plurality of first power semiconductor elements 40A can be suppressed, and the power module 1A can operate stably.

[0169] (1-2) In a plan view, the power module 1A has a shape in which the lateral direction X is the long side direction and the longitudinal direction Y is the short side direction. The first control-side bypass portion 21b of the first control layer 21 is arranged at a distance from the first control-side wiring portion 21a in the longitudinal direction Y and extends along the lateral direction X. The first drive-side bypass portion 24b of the first drive layer 24 is arranged at a distance from the first drive-side wiring portion 24a in the longitudinal direction Y and extends along the lateral direction X. The second drive-side bypass portion 27b of the second drive layer 27 is arranged at a distance from the second drive-side wiring portion 27a in the longitudinal direction Y and extends along the lateral direction X. The second control-side bypass portion 26b of the second control layer 26 is arranged at a distance from the second control-side wiring portion 26a in the longitudinal direction Y and extends along the lateral direction X. Thus, since each bypass portion 21b, 24b, 26b, 27b extends in the lateral direction X which is the long side direction of the power module 1A, the enlargement of the power module 1A in the longitudinal direction Y can be suppressed.

[0170] (1-3) The first control layer 21 is composed of a single member in which the first control-side wiring portion 21a, the first control-side bypass portion 21b, and the first control-side connection portion 21c are integrally formed. According to this configuration, for example, compared with a configuration in which the first control-side wiring portion 21a, the first control-side bypass portion 21b, and the first control-side connection portion 21c are formed individually and the first control-side wiring portion 21a, the first control-side bypass portion 21b, and the first control-side connection portion 21c are connected by wires, it becomes easier to form the first control layer 21 on the first substrate 11.

[0171] Further, the first driving layer 24 is composed of a single member in which a first driving side wiring portion 24a, a first driving side detour portion 24b, and a first driving side connecting portion 24c are integrally formed. According to this configuration, for example, compared with a configuration in which the first driving side wiring portion 24a, the first driving side detour portion 24b, and the first driving side connecting portion 24c are formed individually and connected by wires between the first driving side wiring portion 24a, the first driving side detour portion 24b, and the first driving side connecting portion 24c, the first driving layer 24 can be more easily formed on the second substrate 12.

[0172] Also, the second driving layer 27 is composed of a single member in which a second driving side wiring portion 27a, a second driving side detour portion 27b, and a second driving side connecting portion 27c are integrally formed. According to this configuration, for example, compared with a configuration in which the second driving side wiring portion 27a, the second driving side detour portion 27b, and the second driving side connecting portion 27c are formed individually and connected by wires between the second driving side wiring portion 27a, the second driving side detour portion 27b, and the second driving side connecting portion 27c, the second driving layer 27 can be more easily formed on the first substrate 11.

[0173] Also, the second control layer 26 is composed of a single member in which a second control side wiring portion 26a, a second control side detour portion 26b, and a second control side connecting portion 26c are integrally formed. According to this configuration, for example, compared with a configuration in which the second control side wiring portion 26a, the second control side detour portion 26b, and the second control side connecting portion 26c are formed individually and connected by wires between the second control side wiring portion 26a, the second control side detour portion 26b, and the second control side connecting portion 26c, the second control layer 26 can be more easily formed on the second substrate 12.

[0174] (1-4) In the vertical direction Y, the first driving layer 23 is disposed closer to the first mounting layer 13A side than the first control layer 21. According to this configuration, the length of the first driving side connection member 33A that connects the first driving layer 23 and the source electrode 42 of each first power semiconductor element 40A of the first substrate 11 can be shortened. Therefore, the inductance caused by the first driving side connection member 33A can be reduced.

[0175] Also, in the vertical direction Y, the first drive layer 24 is disposed closer to the first mounting layer 13B side than the first control layer 22. According to this configuration, the length of the first drive side connection member 33A that connects the first drive layer 24 and the source electrode 42 of each first power semiconductor element 40A of the second substrate 12 can be shortened. Therefore, the inductance caused by the first drive side connection member 33A can be reduced.

[0176] Also, in the vertical direction Y, the second drive layer 27 is disposed closer to the conductive layer 15A side than the second control layer 25. According to this configuration, the length of the second drive side connection member 33B that connects the second drive layer 27 and the source electrode 42 of each second power semiconductor element 40B of the first substrate 11 can be shortened. Therefore, the inductance caused by the second drive side connection member 33B can be reduced.

[0177] Also, in the vertical direction Y, the second drive layer 28 is disposed closer to the conductive layer 15B side than the second control layer 26. According to this configuration, the length of the second drive side connection member 33B that connects the second drive layer 28 and the source electrode 42 of each second power semiconductor element 40B of the second substrate 12 can be shortened. Therefore, the inductance caused by the second drive side connection member 33B can be reduced.

[0178] (1-5) The first control side detour portion 21b of the first control layer 21 is disposed on the side opposite to the first drive layer 23 with respect to the first control side wiring portion 21a in the vertical direction Y. According to this configuration, the first control side detour portion 21b is disposed on the side wall 81A side of the case 80, that is, on the side closer to the first control terminal 53A in the vertical direction Y. For this reason, the length of the first control terminal side connection member 35A that connects the first control side connection portion 21d formed at the tip of the first control side detour portion 21b and the first control terminal 53A can be shortened. Therefore, the inductance caused by the first control terminal side connection member 35A can be reduced.

[0179] Further, the second control side bypass portion 26b of the second control layer 26 is disposed on the side opposite to the second drive layer 28 with respect to the second control side wiring portion 26a in the vertical direction Y. According to this configuration, the second control side bypass portion 26b is disposed on the side of the side wall 81B of the case 80, that is, on the side close to the second control terminal 53B in the vertical direction Y. For this reason, the length of the second control terminal side connection member 35B that connects the second control side connection portion 26d formed at the tip of the second control side bypass portion 26b and the second control terminal 53B can be shortened. Therefore, the inductance caused by the second control terminal side connection member 35B can be reduced.

[0180] (1-6) The first drive side bypass portion 24b of the first drive layer 24 is disposed on the side opposite to the first drive side wiring portion 24a with respect to the first control layer 22 in the vertical direction Y. According to this configuration, the first drive side bypass portion 24b is disposed on the side of the side wall 81A of the case 80, that is, on the side close to the first detection terminal 54A in the vertical direction Y. For this reason, the length of the first detection terminal side connection member 36A that connects the first drive side connection portion 24d formed at the tip of the first drive side bypass portion 24b and the first detection terminal 54A can be shortened. Therefore, the inductance caused by the first detection terminal side connection member 36A can be reduced.

[0181] Further, the second drive side bypass portion 27b of the second drive layer 27 is disposed on the side opposite to the second drive side wiring portion 27a with respect to the second control layer 25 in the vertical direction Y. According to this configuration, the second drive side bypass portion 27b is disposed on the side of the side wall 81A of the case 80, that is, on the side close to the second detection terminal 54B in the vertical direction Y. For this reason, the length of the second detection terminal side connection member 36B that connects the second drive side connection portion 27d formed at the tip of the second drive side bypass portion 27b and the second detection terminal 54B can be shortened. Therefore, the inductance caused by the second detection terminal side connection member 36B can be reduced.

[0182] (1-7) The first control side bypass portion 21b of the first control layer 21 is not connected to the first control side connection member 32A. The first control side connection member 32A is connected to the first control side wiring portion 21a. According to this configuration, the length of the first control side conductive path between the gate electrode 43 of the first power semiconductor element 40A on the first substrate 11 and the first control terminal 53A becomes longer in order from the first power semiconductor element 40Ab closest to the third substrate side surface 11c side to the first power semiconductor element 40Aa closest to the fourth substrate side surface 11d side among the plurality of first power semiconductor elements 40A on the first substrate 11. On the other hand, since the length of the first drive side conductive path between the source electrode 42 of the first power semiconductor element 40A on the first substrate 11 and the first detection terminal 54A becomes longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab, the variation in the total length of the first control side conductive path and the first drive side conductive path in the plurality of first power semiconductor elements 40A on the first substrate 11 can be suppressed.

[0183] Also, the first drive side bypass portion 24b of the first drive layer 24 is not connected to the first drive side connection member 33A. The first drive side connection member 33A is connected to the first drive side wiring portion 24a. According to this configuration, the length of the first drive side conductive path between the source electrode 42 of the first power semiconductor element 40A and the first detection terminal 54A becomes longer in order from the first power semiconductor element 40Ad closest to the fourth substrate side surface 12d side to the first power semiconductor element 40Ac closest to the third substrate side surface 12c side among the plurality of first power semiconductor elements 40A on the second substrate 12. On the other hand, since the length of the first control side conductive path between the gate electrode 43 of the first power semiconductor element 40A on the second substrate 12 and the first control terminal 53A becomes longer in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad, the variation in the total length of the first control side conductive path and the first drive side conductive path in the plurality of first power semiconductor elements 40A on the second substrate 12 can be suppressed.

[0184] Further, a second drive-side connection member 33B is not connected to the second drive-side bypass portion 27b of the second drive layer 27. The second drive-side connection member 33B is connected to the second drive-side wiring portion 27a. According to this configuration, the length of the second drive-side conductive path between the source electrode 42 of the second power semiconductor element 40B on the first substrate 11 and the second detection terminal 54B becomes longer in order from the second power semiconductor element 40Bb closest to the third substrate side surface 11c side among the plurality of second power semiconductor elements 40B on the first substrate 11 to the second power semiconductor element 40Ba closest to the fourth substrate side surface 11d side. On the other hand, since the length of the second control-side conductive path between the gate electrode 43 of the second power semiconductor element 40B on the first substrate 11 and the second control terminal 53B becomes longer in order from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb, variations in the total length of the second control-side conductive path and the second drive-side conductive path in the plurality of second power semiconductor elements 40B on the first substrate 11 can be suppressed.

[0185] Also, a second control-side connection member 32B is not connected to the second control-side bypass portion 26b of the second control layer 26. The second control-side connection member 32B is connected to the second control-side wiring portion 26a. According to this configuration, the length of the second control-side conductive path between the gate electrode 43 of the second power semiconductor element 40B on the second substrate 12 and the second control terminal 53B becomes longer in order from the second power semiconductor element 40Bd closest to the fourth substrate side surface 12d side among the plurality of second power semiconductor elements 40B on the second substrate 12 to the second power semiconductor element 40Bc closest to the third substrate side surface 12c side. On the other hand, since the length of the second drive-side conductive path between the source electrode 42 of the second power semiconductor element 40B on the second substrate 12 and the second detection terminal 54B becomes longer in order from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd, variations in the total length of the second control-side conductive path and the second drive-side conductive path in the plurality of second power semiconductor elements 40B on the second substrate 12 can be suppressed.

[0186] (1-8) The first control-side connection members 32A respectively connected to the plurality of first power semiconductor elements 40A extend along the vertical direction Y. The first drive-side connection members 33A respectively connected to the plurality of first power semiconductor elements 40A extend along the vertical direction Y. The second control-side connection members 32B respectively connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y. The second drive-side connection members 33B respectively connected to the plurality of second power semiconductor elements 40B extend along the vertical direction Y. According to these configurations, it becomes easier to form the connection members 32A, 32B, 33A, and 33B by wire bonding.

[0187] (1-9) The first control-side connection portion 21d of the first control layer 21 extends in the vertical direction Y and overlaps the first control layer 22 when viewed from the horizontal direction X. Therefore, it becomes easier to form the first control layer connection member 93A that connects the first control-side connection portion 21d and the first control layer 22 along the horizontal direction X.

[0188] Also, the first drive-side connection portion 24d of the first drive layer 24 extends in the vertical direction Y and overlaps the first drive layer 23 when viewed from the horizontal direction X. Therefore, it becomes easier to form the first drive layer connection member 94A that connects the first drive-side connection portion 24d and the first drive layer 23 along the horizontal direction X.

[0189] Also, the second drive-side connection portion 27d of the second drive layer 27 extends in the vertical direction Y and overlaps the second drive layer 28 when viewed from the horizontal direction X. Therefore, it becomes easier to form the second drive layer connection member 94B that connects the second drive-side connection portion 27d and the second drive layer 28 along the horizontal direction X.

[0190] Also, the second control-side connection portion 26d of the second control layer 26 extends in the vertical direction Y and overlaps the second control layer 25 when viewed from the horizontal direction X. Therefore, it becomes easier to form the second control layer connection member 93B that connects the second control-side connection portion 26d and the second control layer 25 along the horizontal direction X.

[0191] [Second Embodiment] Referring to FIGS. 26 to 32, the power module 1B of the second embodiment will be described. The power module 1B of this embodiment is mainly different in the configurations of the control layer and the drive layer, respectively, compared with the power module 1A of the first embodiment. Hereinafter, the differences from the power module 1A of the first embodiment will be described in detail, and the same reference numerals will be given to the components common to the power module 1A of the first embodiment, and the description thereof may be omitted. Note that the two-dot chain lines in FIGS. 28, 29, 31, and 32 are auxiliary lines for clarifying the positional relationship between the respective control layers and the respective drive layers.

[0192] As shown in FIGS. 26 to 28, the first control layer 21 includes a first control-side wiring portion 21a, a first control-side bypass portion 21b, and a first control-side connection portion 21c. In this embodiment, the first control-side wiring portion 21a, the first control-side bypass portion 21b, and the first control-side connection portion 21c are formed individually. The first control-side wiring portion 21a and the first control-side bypass portion 21b are each made of, for example, copper foil. The first control-side connection portion 21c is made of, for example, a wire formed by wire bonding. The first control-side connection portion 21c is made of, for example, Au, an Au alloy, Al, an Al alloy, Cu, or a Cu alloy.

[0193] The first control-side wiring portion 21a and the first control-side bypass portion 21b each extend in the lateral direction X. The first control-side bypass portion 21b is arranged on the side opposite to the first driving layer 23 side with respect to the first control-side wiring portion 21a in the longitudinal direction Y. The end portion of the first control-side wiring portion 21a on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X and the end portion of the first control-side bypass portion 21b on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X are aligned in the lateral direction X. These end portions are aligned with the interlayer connection portion 13c of the first mounting layer 13A when viewed from the longitudinal direction Y. That is, these end portions are located on the fourth substrate side surface 11d side of the first substrate 11 more than the first power semiconductor element 40Aa on the fourth substrate side surface 11d side of the first substrate 11 among the plurality of first power semiconductor elements 40A. The length of the first control-side wiring portion 21a in the lateral direction X is longer than the length of the first control-side bypass portion 21b in the lateral direction X. That is, the end portion of the first control-side wiring portion 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X is located on the third substrate side surface 11c side more than the end portion of the first control-side bypass portion 21b on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X.

[0194] The first control-side wiring portion 21a is formed so as to overlap with the plurality of first power semiconductor elements 40A when viewed from the longitudinal direction Y. The end portion of the first control-side wiring portion 21a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X is formed so as to overlap with the end portion on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X of the first power semiconductor element 40Ab on the third substrate side surface 11c side of the first substrate 11 among the plurality of first power semiconductor elements 40A.

[0195] The first control-side wiring portion 21a is connected to first control-side connection members 32A each connected to a corresponding one of a plurality of first power semiconductor elements 40A on the first substrate 11. The plurality of first control-side connection members 32A are arranged spaced apart from each other in the lateral direction X that is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. Among the plurality of first control-side connection members 32A connected to the four first power semiconductor elements 40A other than the first power semiconductor element 40Ab disposed closest to the third substrate side surface 11c side of the first substrate 11 among the plurality of first power semiconductor elements 40A, each extends along the longitudinal direction Y in plan view. Since the gate electrode 43 of the first power semiconductor element 40Ab is disposed on the third substrate side surface 11c side of the first substrate 11 rather than on the first control-side wiring portion 21a, the first control-side connection member 32A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d side as it goes toward the first substrate side surface 11a of the first substrate 11.

[0196] The first control-side bypass portion 21b is formed so as to overlap the first power semiconductor elements 40A other than the first power semiconductor element 40Ab when viewed from the longitudinal direction Y. That is, the end portion on the third substrate side surface 11c side of the first substrate 11 in the first control-side bypass portion 21b in the lateral direction X is located on the fourth substrate side surface 11d side of the first substrate 11 rather than the first power semiconductor element 40Ab. As can be seen from FIGS. 26 to 28, no first control-side connection member 32A is connected to the first control-side bypass portion 21b.

[0197] The first control-side connecting portion 21c connects the end portion on the third substrate side surface 11c side of the first control-side wiring portion 21a in the lateral direction X and the end portion on the third substrate side surface 11c side of the first control-side bypass portion 21b in the lateral direction X. Thereby, the first control-side wiring portion 21a and the first control-side bypass portion 21b are electrically connected. The first control-side connecting portion 21c is disposed on the third substrate side surface 11c side of the first substrate 11 rather than the first control-side connection member 32A connected to the first power semiconductor element 40Ab. The first control-side connecting portion 21c extends obliquely toward the fourth substrate side surface 11d side as it goes toward the first substrate side surface 11a of the first substrate 11.

[0198] The first drive layer 23 extends along the lateral direction X. The first drive layer 23 is arranged to be adjacent to the first mounting layer 13A in the longitudinal direction Y. In the longitudinal direction Y, the first drive layer 23 is arranged between the first control-side wiring portion 21a and the first mounting layer 13A. The length of the first drive layer 23 in the lateral direction X is longer than the length of the first control-side wiring portion 21a in the lateral direction X and the length of the first control-side detour portion 21b in the lateral direction X. The end portion of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X is aligned with the end portion of the first control-side wiring portion 21a on the fourth substrate side surface 11d side and the end portion of the first control-side detour portion 21b on the fourth substrate side surface 11d side in the longitudinal direction Y. When viewed from the longitudinal direction Y, the first drive layer 23 overlaps with a plurality of first power semiconductor elements 40A of the first substrate 11. Also, when viewed from the longitudinal direction Y, the first drive layer 23 overlaps with the thermistor mounting layer 16.

[0199] Connected to the first drive layer 23 are first drive-side connection members 33A each connected to a respective one of the plurality of first power semiconductor elements 40A of the first substrate 11. The plurality of first drive-side connection members 33A are arranged spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connection members 33A connected to four of the first power semiconductor elements 40A other than the first power semiconductor element 40Ab disposed closest to the third substrate side surface 11c side of the first substrate 11 each extend along the longitudinal direction Y in plan view. The first drive-side connection member 33A connected to the first power semiconductor element 40Ab extends obliquely toward the fourth substrate side surface 11d side as it goes toward the first substrate side surface 11a of the first substrate 11.

[0200] The thermistor mounting layer 16 is arranged with a different orientation with respect to the first substrate 11 as compared to the thermistor mounting layer 16 of the first embodiment. The thermistor mounting layer 16 is arranged so as to be in a state of being rotated 90° in the clockwise direction with respect to the thermistor mounting layer 16 of the first embodiment. When viewed from the lateral direction X, the thermistor mounting layer 16 overlaps with the first control layer 21. In the longitudinal direction Y, the thermistor mounting layer 16 is arranged closer to the first substrate side surface 11a of the first substrate 11 than the first driving layer 23.

[0201] As shown in FIGS. 27 and 29, the first driving layer 24 includes a first driving side wiring portion 24a, a first driving side detour portion 24b, a first driving side connecting portion 24c, and a first driving side connection portion 24d. In the present embodiment, the first driving side wiring portion 24a, the first driving side detour portion 24b, and the first driving side connecting portion 24c are formed individually, and the first driving side detour portion 24b and the first driving side connection portion 24d are formed integrally. The first driving side wiring portion 24a, the first driving side detour portion 24b, and the first driving side connection portion 24d are each made of, for example, copper foil. The first driving side connecting portion 24c is made of, for example, a wire formed by wire bonding. The first driving side connecting portion 24c is made of, for example, Au, an Au alloy, Al, an Al alloy, Cu, or a Cu alloy.

[0202] The first driving side wiring portion 24a and the first driving side detour portion 24b each extend in the lateral direction X. The first driving side detour portion 24b is arranged on the side opposite to the first driving layer 24 side with respect to the first driving side wiring portion 24a in the longitudinal direction Y. The end portion of the first driving side wiring portion 24a on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X and the end portion of the first driving side detour portion 24b on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X are aligned in the lateral direction X. These end portions are adjacent to the interlayer connection portion 13f of the first mounting layer 13B when viewed from the longitudinal direction Y. The length of the first driving side detour portion 24b in the lateral direction X is slightly longer than the length of the first driving side wiring portion 24a in the lateral direction X.

[0203] The first drive-side wiring portion 24a is formed so as to overlap with a plurality of first power semiconductor elements 40A when viewed from the longitudinal direction Y. The end portion of the first drive-side wiring portion 24a on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X overlaps with the end portion of the first power semiconductor element 40Ad on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X among the plurality of first power semiconductor elements 40A, which is the closest to the fourth substrate side surface 12d side of the second substrate 12.

[0204] A first drive-side connection member 33A connected to each of the plurality of first power semiconductor elements 40A of the second substrate 12 is connected to the first drive-side wiring portion 24a. The plurality of first drive-side connection members 33A are arranged at intervals from each other in the lateral direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. The first drive-side connection members 33A connected to the four first power semiconductor elements 40A other than the first power semiconductor element 40Ad among the plurality of first power semiconductor elements 40A each extend along the longitudinal direction Y in a plan view. Since the gate electrode 43 of the first power semiconductor element 40Ad is disposed on the fourth substrate side surface 12d side of the second substrate 12 rather than on the first drive-side wiring portion 24a, the first drive-side connection member 33A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c side as it goes toward the first substrate side surface 12a of the second substrate 12.

[0205] The first drive-side bypass portion 24b is formed so as to overlap with the first power semiconductor element 40A when viewed from the longitudinal direction Y. As can be seen from FIGS. 26, 27, and 29, the first drive-side connection member 33A is not connected to the first drive-side bypass portion 24b.

[0206] The first drive-side connecting portion 24c connects the portion of the first drive-side wiring portion 24a on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X and the portion of the first drive-side bypass portion 24b on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X. In a plan view, the first drive-side connecting portion 24c extends along the longitudinal direction Y. The first drive-side connecting portion 24c is formed so as to straddle the first control layer 22.

[0207] The first drive-side connection portion 24d is formed at an end of the first drive-side bypass portion 24b in the lateral direction X on the side of the third substrate surface 12c of the second substrate 12. The first drive-side connection portion 24d is located on the side of the third substrate surface 12c of the second substrate 12 rather than the first drive-side wiring portion 24a in the lateral direction X. The first drive-side connection portion 24d extends in the longitudinal direction Y. In the longitudinal direction Y, the first drive-side connection portion 24d is arranged adjacent to the interlayer connection portion 13f of the first mounting layer 13B. The width dimension of the first drive-side connection portion 24d (the dimension of the first drive-side connection portion 24d in the lateral direction X) is larger than the width dimension of the first drive-side bypass portion 24b (the dimension of the first drive-side bypass portion 24b in the longitudinal direction Y). The edge of the first drive-side connection portion 24d on the side of the first mounting layer 13B among the first drive-side connection portions 24d in the longitudinal direction Y is spaced apart from the first drive-side wiring portion 24a in the lateral direction X in a state where it is aligned with the edge of the first drive-side wiring portion 24a on the side of the first mounting layer 13B in the longitudinal direction Y.

[0208] The first control layer 22 is arranged between the first drive-side wiring portion 24a and the first drive-side bypass portion 24b in the first drive layer 24 in the longitudinal direction Y. The first control layer 22 extends along the lateral direction X. The shape of the first control layer 22 in plan view is strip-shaped. In the present embodiment, the width dimension of the first control layer 22 (the dimension of the first control layer 22 in the longitudinal direction Y) is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24 (the dimension of the first drive-side wiring portion 24a in the longitudinal direction Y). Also, the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side bypass portion 24b in the first drive layer 24 (the dimension of the first drive-side bypass portion 24b in the longitudinal direction Y).

[0209] Here, if the difference between the dimension in the vertical direction Y of the first control layer 22 and the dimension in the vertical direction Y of the first drive-side wiring portion 24a in the first drive layer 24 is within 5% of the dimension in the vertical direction Y of the first drive-side wiring portion 24a in the first drive layer 24, for example, it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side wiring portion 24a in the first drive layer 24. Further, if the difference between the dimension in the vertical direction Y of the first control layer 22 and the dimension in the vertical direction Y of the first drive-side detour portion 24b in the first drive layer 24 is within 5% of the dimension in the vertical direction Y of the first drive-side detour portion 24b in the first drive layer 24, for example, it can be said that the width dimension of the first control layer 22 is equal to the width dimension of the first drive-side detour portion 24b in the first drive layer 24.

[0210] The length of the first control layer 22 in the horizontal direction X is equal to the length of the first drive-side wiring portion 24a in the first drive layer 24 in the horizontal direction X. When viewed from the vertical direction Y, the end portion of the first control layer 22 in the first substrate 12 on the third substrate side surface 12c side in the horizontal direction X is aligned with the end portion 24e of the first drive-side wiring portion 24a of the first drive layer 24. Further, the end portion of the first control layer 22 in the first substrate 12 on the third substrate side surface 12c side in the horizontal direction X is adjacent to the interlayer connection portion 13f of the first mounting layer 13B in the horizontal direction X. When viewed from the horizontal direction X, the first control layer 22 overlaps with the first drive-side connection portion 24d of the first drive layer 24.

[0211] The first control layer 22 is connected to first control-side connection members 32A each connected to a respective one of a plurality of first power semiconductor elements 40A on the second substrate 12. The plurality of first control-side connection members 32A are arranged spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the plurality of first power semiconductor elements 40A. Among the plurality of first power semiconductor elements 40A, the first control-side connection members 32A connected to four first power semiconductor elements 40A other than the first power semiconductor element 40Ad disposed closest to the fourth substrate side surface 12d of the second substrate 12 each extend along the longitudinal direction Y in a plan view. Since the gate electrode 43 of the first power semiconductor element 40Ad is disposed on the fourth substrate side surface 12d side of the second substrate 12 rather than on the first control layer 22, the first control-side connection member 32A connected to the first power semiconductor element 40Ad extends obliquely toward the third substrate side surface 12c as it goes toward the first substrate side surface 12a of the second substrate 12.

[0212] As shown in FIGS. 26 to 29, a first control terminal-side connection member 35A is connected to a portion on the fourth substrate side surface 11d side of the first substrate 11 in the first control-side bypass portion 21b in the lateral direction X. When viewed from the longitudinal direction Y, the first control terminal-side connection member 35A is formed so as to overlap the first power semiconductor element 40Aa.

[0213] A first control layer connection member 93A is connected to an end portion on the fourth substrate side surface 11d side of the first substrate 11 in the first control-side bypass portion 21b in the lateral direction X. The first control layer connection member 93A is located on the fourth substrate side surface 11d side of the first substrate 11 rather than the first power semiconductor element 40Aa. Further, the first control layer connection member 93A is connected to an end portion on the third substrate side surface 12c side of the second substrate 12 in the first control layer 22 in the lateral direction X. Since the first control-side bypass portion 21b is located on the side wall 81A side of the case 80 rather than the first control layer 22 in the longitudinal direction Y, in a plan view, the first control layer connection member 93A extends obliquely toward the side wall 81A as it goes from the first control layer 22 toward the first control layer 21. As can be seen from FIG. 26, the first control layer connection member 93A is formed so as to straddle the first drive-side connection portion 24d of the first drive layer 24 in the lateral direction X.

[0214] A first detection terminal side connection member 36A is connected to the first drive side bypass portion 24b. More specifically, the first detection terminal side connection member 36A is connected to an end portion on the first drive side connection portion 24d side of the first drive side bypass portion 24b in the lateral direction X.

[0215] A first drive layer connection member 94A is connected to an end portion on the fourth substrate side surface 11d side of the first substrate 11 in the first drive layer 23 in the lateral direction X. The first drive layer connection member 94A is connected to an end portion on the first mounting layer 13B side of the first drive side connection portion 24d in the longitudinal direction Y. In plan view, the first drive layer connection member 94A extends along the lateral direction X.

[0216] As shown in FIGS. 30 and 31, the second drive layer 27 includes a second drive side wiring portion 27a, a second drive side bypass portion 27b, a second drive side connection portion 27c, and a second drive side connection portion 27d. In the present embodiment, the second drive side wiring portion 27a, the second drive side bypass portion 27b, and the second drive side connection portion 27c are formed individually, and the second drive side bypass portion 27b and the second drive side connection portion 27d are formed integrally. The second drive side wiring portion 27a, the second drive side bypass portion 27b, and the second drive side connection portion 27d are each made of, for example, copper foil. The second drive side connection portion 27c is a wire formed by wire bonding. The shapes of the second drive side wiring portion 27a and the second drive side bypass portion 27b in plan view are each strip-shaped.

[0217] The second drive-side wiring portion 27a extends along the lateral direction X. In the longitudinal direction Y, the second drive-side wiring portion 27a is arranged adjacent to the conductive layer 15A. Among the ends 27e of the second drive-side wiring portion 27a on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X, in the lateral direction X, it is located on the fourth substrate side surface 11d side of the first substrate 11 further than the second power semiconductor element 40Ba which is the closest to the fourth substrate side surface 11d side among the plurality of second power semiconductor elements 40B. Among the ends 27f of the second drive-side wiring portion 27a on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X, in the lateral direction X, it is located on the third substrate side surface 11c side of the first substrate 11 further than the second power semiconductor element 40Bb which is the closest to the third substrate side surface 11c side among the plurality of second power semiconductor elements 40B. That is, when viewed from the longitudinal direction Y, the second drive-side wiring portion 27a extends in the lateral direction X so as to overlap all the second power semiconductor elements 40B arranged on the first substrate 11.

[0218] Second drive-side connection members 33B, each connected to a respective one of the plurality of second power semiconductor elements 40B, are connected to the second drive-side wiring portion 27a. The plurality of second drive-side connection members 33B are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second drive-side connection members 33B connected to the plurality of second power semiconductor elements 40B each extend along the longitudinal direction Y in a plan view.

[0219] The second drive-side detour portion 27b is arranged at a distance from the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side detour portion 27b is arranged on the side opposite to the conductive layer 15A side with respect to the second drive-side wiring portion 27a in the vertical direction Y. The second drive-side detour portion 27b is arranged on the second substrate side surface 11b side of the first substrate 11 rather than the second control layer 25 in the vertical direction Y. In the vertical direction Y, the second drive-side detour portion 27b is arranged so as to be adjacent to the second substrate side surface 11b of the first substrate 11. The second drive-side detour portion 27b extends along the lateral direction X. The length of the second drive-side detour portion 27b in the lateral direction X is slightly longer than the length of the second drive-side wiring portion 27a in the lateral direction X. As can be seen from FIG. 31, the second drive-side connection member 33B is not connected to the second drive-side detour portion 27b.

[0220] The second drive-side connecting portion 27c connects the second drive-side wiring portion 27a and the second drive-side detour portion 27b. More specifically, the second drive-side connecting portion 27c connects the end portion on the third substrate side surface 11c side of the first substrate 11 of the second drive-side wiring portion 27a in the lateral direction X and the end portion on the third substrate side surface 11c side of the second drive-side detour portion 27b in the lateral direction X. The second drive-side connecting portion 27c extends in the vertical direction Y. When viewed from the vertical direction Y, the second drive-side connecting portion 27c is arranged so as to overlap with the end portion on the third substrate side surface 11c side of the first substrate 11 in the lateral direction X of the second power semiconductor element 40Bb which is the most on the third substrate side surface 11c side of the second power semiconductor element 40B. In the lateral direction X, the second drive-side connecting portion 27c is arranged on the third substrate side surface 11c side of the first substrate 11 rather than the second control-side connection member 32B and the second drive-side connection member 33B connected to the second power semiconductor element 40Bb.

[0221] The second drive-side connection portion 27d is formed at the tip of the second drive-side detour portion 27b. In the lateral direction X, the second drive-side connection portion 27d is located on the fourth substrate side surface 11d side of the first substrate 11 rather than the second drive-side wiring portion 27a. The second drive-side connection portion 27d extends in the longitudinal direction Y. The width dimension of the second drive-side connection portion 27d (the dimension in the lateral direction X of the second drive-side connection portion 27d) is larger than the width dimension of the second drive-side detour portion 27b (the dimension in the longitudinal direction Y of the second drive-side detour portion 27b). The edge of the second drive-side connection portion 27d on the conductive layer 15A side in the longitudinal direction Y is spaced apart from the second drive-side wiring portion 27a in the lateral direction X in a state where it is aligned with the edge of the second drive-side wiring portion 27a on the conductive layer 15A side in the longitudinal direction Y.

[0222] The second control layer 25 extends along the lateral direction X. The shape of the second control layer 25 in plan view is strip-shaped. In the longitudinal direction Y, the second control layer 25 is disposed between the second drive-side wiring portion 27a and the second drive-side detour portion 27b. In the present embodiment, the width dimension of the second control layer 25 (the dimension in the longitudinal direction Y of the second control layer 25) is equal to the width dimension of the second drive-side wiring portion 27a in the second drive layer 27 (the dimension in the longitudinal direction Y of the second drive-side wiring portion 27a). Also, the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side detour portion 27b in the second drive layer 27 (the dimension in the longitudinal direction Y of the second drive-side detour portion 27b).

[0223] Here, if the difference between the dimension in the longitudinal direction Y of the second control layer 25 and the dimension in the longitudinal direction Y of the second drive-side wiring portion 27a in the second drive layer 27 is, for example, within 5% of the dimension in the longitudinal direction Y of the second drive-side wiring portion 27a in the second drive layer 27, it can be said that the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side wiring portion 27a in the second drive layer 27. Also, if the difference between the dimension in the longitudinal direction Y of the second control layer 25 and the dimension in the longitudinal direction Y of the second drive-side detour portion 27b in the second drive layer 27 is, for example, within 5% of the dimension in the longitudinal direction Y of the second drive-side detour portion 27b in the second drive layer 27, it can be said that the width dimension of the second control layer 25 is equal to the width dimension of the second drive-side detour portion 27b in the second drive layer 27.

[0224] The length of the second control layer 25 in the lateral direction X is equal to the length of the second drive-side wiring portion 27a in the second drive layer 27 in the lateral direction X. In the longitudinal direction Y, both end portions of the second control layer 25 in the lateral direction X are aligned with both end portions of the second drive-side wiring portion 27a of the second drive layer 27 in the lateral direction X.

[0225] Connected to the second control layer 25 are second control-side connection members 32B each connected to a respective one of a plurality of second power semiconductor elements 40B. The plurality of second control-side connection members 32B are arranged spaced apart from each other in the lateral direction X, which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control-side connection members 32B connected to the plurality of second power semiconductor elements 40B extend along the longitudinal direction Y in a plan view. Connected to an end portion of the first drive layer 23 on the fourth substrate side surface 11d side of the first substrate 11 in the lateral direction X is a first drive layer connection member 94A.

[0226] As shown in FIGS. 30 and 32, the second control layer 26 has a second control-side wiring portion 26a, a second control-side detour portion 26b, and a second control-side connection portion 26c. In the present embodiment, the second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side connection portion 26c are formed individually. The second control-side wiring portion 26a, the second control-side detour portion 26b, and the second control-side connection portion 26d are each made of, for example, copper foil. The second control-side connection portion 26c is a wire formed by wire bonding. The shape of each of the second control-side wiring portion 26a and the second control-side detour portion 26b in a plan view is strip-shaped.

[0227] The second control-side wiring portion 26a extends along the lateral direction X. The end portion 26e on the third substrate side surface 12c side of the second substrate 12 of the second control-side wiring portion 26a in the lateral direction X is located on the third substrate side surface 12c side of the second substrate 12 closer to the third substrate side surface 12c than the second power semiconductor element 40Bc which is the closest to the third substrate side surface 12c among the plurality of second power semiconductor elements 40B in the lateral direction X. The end portion 26f on the fourth substrate side surface 12d side of the second substrate 12 of the second control-side wiring portion 26a in the lateral direction X is located on the fourth substrate side surface 12d side of the second substrate 12 closer to the fourth substrate side surface 12d than the second power semiconductor element 40Bd which is the closest to the fourth substrate side surface 12d among the plurality of second power semiconductor elements 40B in the lateral direction X.

[0228] Connected to the second control-side wiring portion 26a are second control-side connection members 32B each connected to a respective one of the plurality of second power semiconductor elements 40B. The plurality of second control-side connection members 32B are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second control-side connection members 32B connected to the plurality of second power semiconductor elements 40B extend along the longitudinal direction Y in plan view.

[0229] The second control-side bypass portion 26b is arranged spaced apart from the second control-side wiring portion 26a in the longitudinal direction Y. The second control-side bypass portion 26b is arranged on the side opposite to the second drive layer 28 side with respect to the second control-side wiring portion 26a in the longitudinal direction Y. The second control-side bypass portion 26b is arranged adjacent to the second substrate side surface 12b of the second substrate 12 in the longitudinal direction Y. The second control-side bypass portion 26b extends along the lateral direction X. The length of the second control-side bypass portion 26b in the lateral direction X is equal to the length of the second control-side wiring portion 26a in the lateral direction X. Both end portions of the second control-side bypass portion 26b in the lateral direction X are aligned with both end portions of the second control-side wiring portion 26a in the lateral direction X. As can be seen from FIG. 32, no second control-side connection member 32B is connected to the second control-side bypass portion 26b.

[0230] The second control-side connection portion 26c connects the second control-side wiring portion 26a and the second control-side detour portion 26b. More specifically, the second control-side connection portion 26c connects the end portion of the second control-side wiring portion 26a on the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X and the end portion of the second control-side detour portion 26b on the fourth substrate side surface 12d side in the lateral direction X. The second control-side connection portion 26c extends in the longitudinal direction Y. When viewed from the longitudinal direction Y, the second control-side connection portion 26c is arranged so as to overlap with the second power semiconductor element 40Bd, which is the second power semiconductor element 40B closest to the fourth substrate side surface 12d side of the second substrate 12 in the lateral direction X, among the plurality of second power semiconductor elements 40B. In the lateral direction X, the second control-side connection portion 26c is located on the fourth substrate side surface 12d side of the second substrate 12, closer to the fourth substrate side surface 12d than the second control-side connection member 32B and the second drive-side connection member 33B connected to the second power semiconductor element 40Bd.

[0231] The second drive layer 28 extends along the lateral direction X. The shape of the second drive layer 28 in plan view is a strip shape. In the longitudinal direction Y, the second drive layer 28 is arranged adjacent to the conductive layer 15B. In the present embodiment, the width dimension of the second drive layer 28 (the dimension of the second drive layer 28 in the longitudinal direction Y) is equal to the width dimension of the second control-side wiring portion 26a in the second control layer 26 (the dimension of the second control-side wiring portion 26a in the longitudinal direction Y). Also, the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side detour portion 26b in the second control layer 26 (the dimension of the second control-side detour portion 26b in the longitudinal direction Y).

[0232] Here, if the difference between the dimension of the second drive layer 28 in the longitudinal direction Y and the dimension of the second control-side wiring portion 26a in the second control layer 26 in the longitudinal direction Y is, for example, within 5% of the dimension of the second control-side wiring portion 26a in the second control layer 26 in the longitudinal direction Y, it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side wiring portion 26a in the second control layer 26. Also, if the difference between the dimension of the second drive layer 28 in the longitudinal direction Y and the dimension of the second control-side detour portion 26b in the second control layer 26 in the longitudinal direction Y is, for example, within 5% of the dimension of the second control-side detour portion 26b in the second control layer 26 in the longitudinal direction Y, it can be said that the width dimension of the second drive layer 28 is equal to the width dimension of the second control-side detour portion 26b in the second control layer 26.

[0233] The length of the second driving layer 28 in the lateral direction X is equal to the length of the second control side wiring portion 26a in the second control layer 26 in the lateral direction X. Both ends of the second driving layer 28 in the lateral direction X are aligned with both ends of the second control side wiring portion 26a of the second control layer 26 in the lateral direction X. Further, the length of the second driving layer 28 in the lateral direction X is equal to the length of the second control side detour portion 26b in the second control layer 26 in the lateral direction X. Both ends of the second driving layer 28 in the lateral direction X are aligned with both ends of the second control side detour portion 26b of the second control layer 26 in the lateral direction X.

[0234] Connected to the second driving layer 28 are second driving side connection members 33B each connected to a respective one of a plurality of second power semiconductor elements 40B on the second substrate 12. The plurality of second driving side connection members 33B are arranged spaced apart from each other in the lateral direction X which is the same direction as the arrangement direction of the plurality of second power semiconductor elements 40B. The second driving side connection members 33B connected to the plurality of second power semiconductor elements 40B extend along the longitudinal direction Y in a plan view.

[0235] As shown in FIGS. 30 to 32, connected to the second driving side detour portion 27b is a second detection terminal side connection member 36B. More specifically, the second detection terminal side connection member 36B is connected to the end portion on the second driving side connection portion 27d side of the second driving side detour portion 27b in the lateral direction X.

[0236] Connected to the second driving side connection portion 27d is a second driving layer connection member 94B. More specifically, the second driving layer connection member 94B is connected to the end portion on the conductive layer 15A side of the second driving side connection portion 27d in the longitudinal direction Y. Further, the second driving layer connection member 94B is connected to the end portion on the third substrate side surface 12c side of the second substrate 12 of the second driving layer 28 in the lateral direction X. In a plan view, the second driving layer connection member 94B extends along the lateral direction X.

[0237] The second control-side bypass portion 26b is connected to a second control terminal-side connection member 35B and a second control layer connection member 93B, respectively. The second control terminal-side connection member 35B is connected to a portion of the second control-side bypass portion 26b in the lateral direction X on the third substrate side surface 12c side of the second substrate 12. The second control layer connection member 93B is connected to an end portion 26e on the third substrate side surface 12c side of the second substrate 12 of the second control-side bypass portion 26b in the lateral direction X. Further, the second control layer connection member 93B is connected to an end portion 25x on the fourth substrate side surface 11d side of the first substrate 11 of the second control layer 25 in the lateral direction X. In the longitudinal direction Y, since the end portion 26e of the second control-side bypass portion 26b is located on the second substrate side surface 12b side of the second substrate 12 rather than the end portion 25x of the second control layer 25, in plan view, the second control layer connection member 93B extends obliquely toward the second substrate side surface 12b side of the second substrate 12 as it goes from the end portion 25x of the second control layer 25 toward the end portion 26e of the second control-side bypass portion 26b. As can be seen from FIG. 32, the second control layer connection member 93B is formed so as to straddle the second drive-side connection portion 27d of the second drive layer 27.

[0238] (Conductive path) Next, the control-side conductive path, which is the first conductive path between each power semiconductor element 40A, 40B and each control terminal 53A, 53B, and the drive-side conductive path, which is the second conductive path between each power semiconductor element 40A, 40B and each detection terminal 54A, 54B, will be described.

[0239] As shown in Fig. 27, the first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first control terminal 53A is constituted by the first control-side connection member 32A, the first control layer 21, and the first control terminal-side connection member 35A. Therefore, the first control-side conductive path for the plurality of first power semiconductor elements 40A on the first substrate 11 becomes longer in order from the first power semiconductor element 40Ab to the first power semiconductor element 40Aa. In other words, the difference in the length of the first control-side conductive path for each of the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Aa, is the longest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ab, is the shortest.

[0240] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the first substrate 11 to the first detection terminal 54A is constituted by the first drive-side connection member 33A, the first drive layer 23, the first drive layer connection member 94A, the first drive-side connection portion 24d of the first drive layer 24, and the first detection terminal-side connection member 36A. Therefore, the first drive-side conductive path for the plurality of first power semiconductor elements 40A on the first substrate 11 becomes longer in order from the first power semiconductor element 40Aa to the first power semiconductor element 40Ab. In other words, the difference in the length of the first drive-side conductive path for each of the first power semiconductor element 40Aa as the first end power semiconductor element and the first power semiconductor element 40Ab as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Aa, is the shortest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ab, is the longest.

[0241] The first control-side conductive path from the gate electrode 43 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first control terminal 53A is composed of a first control-side connection member 32A, a first control layer 22, a first control layer connection member 93A, a first control layer 21, and a first control terminal-side connection member 35A. Therefore, the first control-side conductive path for the plurality of first power semiconductor elements 40A on the second substrate 12 becomes longer in order from the first power semiconductor element 40Ac to the first power semiconductor element 40Ad. In other words, the difference in the lengths of the first control-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ac, is the shortest, and the length of the second end control-side conductive path, which is the first control-side conductive path of the first power semiconductor element 40Ad, is the longest.

[0242] The first drive-side conductive path from the source electrode 42 of the plurality of first power semiconductor elements 40A on the second substrate 12 to the first detection terminal 54A is composed of a first drive-side connection member 33A, a first drive layer 24, and a first detection terminal-side connection member 36A. Therefore, the first drive-side conductive path for the plurality of first power semiconductor elements 40A on the second substrate 12 becomes longer in order from the first power semiconductor element 40Ad to the first power semiconductor element 40Ac. In other words, the difference in the lengths of the first drive-side conductive paths for the first power semiconductor element 40Ac as the first end power semiconductor element and the first power semiconductor element 40Ad as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of first power semiconductor elements 40A, becomes the largest. In this case, the length of the first end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ac, is the longest, and the length of the second end drive-side conductive path, which is the first drive-side conductive path of the first power semiconductor element 40Ad, is the shortest.

[0243] Thus, in the present embodiment, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation among the lengths of the plurality of first power semiconductor elements 40A in the total length of the length of the first control-side conductive path and the length of the first drive-side conductive path. That is, the power module 1B of the present embodiment is configured such that, by the first control-side bypass portion 21b and the first drive-side bypass portion 24b, the sum of the length of the first control-side conductive path, which is an example of the first conductive path, and the length of the first drive-side conductive path, which is an example of the second conductive path, approaches each other among the plurality of first power semiconductor elements 40A.

[0244] Also, in the present embodiment, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation between the total length of the length of the first end control-side conductive path and the length of the first end drive-side conductive path and the total length of the length of the second end control-side conductive path and the length of the second end drive-side conductive path.

[0245] Note that the total length of the length of the first end control-side conductive path and the length of the first end drive-side conductive path is an example of the first sum described in the claims. Also, the total length of the length of the second end control-side conductive path and the length of the second end drive-side conductive path is an example of the second sum described in the claims. Therefore, the power module 1B of the present embodiment is configured such that, by the first control-side bypass portion 21b and the first drive-side bypass portion 24b, the first sum and the second sum approach each other.

[0246] As shown in FIG. 30, the second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second control terminal 53B is composed of a second control-side connection member 32B, a second control layer 25, a second control layer connection member 93B, a second control-side connection portion 26d of the second control layer 26, and a second control terminal-side connection member 35B. Therefore, the second control-side conductive path, which is an example of the third conductive path related to the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in order as it goes from the second power semiconductor element 40Ba to the second power semiconductor element 40Bb. In other words, the difference in the length of the second control-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Ba, is the shortest, and the length of the fourth end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bb, is the longest.

[0247] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the first substrate 11 to the second detection terminal 54B is composed of a second drive-side connection member 33B, a second drive layer 27, and a second detection terminal-side connection member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path related to the plurality of second power semiconductor elements 40B on the first substrate 11, becomes longer in order as it goes from the second power semiconductor element 40Bb to the second power semiconductor element 40Ba. In other words, the difference in the length of the second drive-side conductive path for each of the second power semiconductor element 40Ba as the first end power semiconductor element and the second power semiconductor element 40Bb as the second end power semiconductor element, which are both ends in the arrangement direction of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Ba, is the longest, and the length of the fourth end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bb, is the shortest.

[0248] The second control-side conductive path from the gate electrode 43 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second control terminal 53B is constituted by the second control-side connection member 32B, the second control layer 26, and the second control-terminal-side connection member 35B. Therefore, the second control-side conductive path, which is an example of the third conductive path regarding the plurality of second power semiconductor elements 40B on the second substrate 12, becomes longer in order as it goes from the second power semiconductor element 40Bd to the second power semiconductor element 40Bc. In other words, the difference in the length of the second control-side conductive path regarding each of the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the arrangement direction of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bc, is the longest, and the length of the fourth-end control-side conductive path, which is the second control-side conductive path of the second power semiconductor element 40Bd, is the shortest.

[0249] The second drive-side conductive path from the source electrode 42 of the plurality of second power semiconductor elements 40B on the second substrate 12 to the second detection terminal 54B is constituted by the second drive-side connection member 33B, the second drive layer 28, the second drive-layer connection member 94B, the second drive-side connection portion 27d of the second drive layer 27, and the second detection-terminal-side connection member 36B. Therefore, the second drive-side conductive path, which is an example of the fourth conductive path regarding the plurality of second power semiconductor elements 40B on the second substrate 12, becomes longer in order as it goes from the second power semiconductor element 40Bc to the second power semiconductor element 40Bd. In other words, the difference in the length of the second drive-side conductive path regarding each of the second power semiconductor element 40Bc as the first-end power semiconductor element and the second power semiconductor element 40Bd as the second-end power semiconductor element, which are both ends in the arrangement direction of the plurality of second power semiconductor elements 40B, becomes the largest. In this case, the length of the third-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bc, is the shortest, and the length of the fourth-end drive-side conductive path, which is the second drive-side conductive path of the second power semiconductor element 40Bd, is the longest.

[0250] Thus, in this embodiment, the second control-side bypass portion 26b and the second drive-side bypass portion 27b are respectively formed so as to reduce the variation among the lengths of the second power semiconductor elements 40B in the total length of the length of the second control-side conductive path and the length of the second drive-side conductive path. That is, the power module 1B of this embodiment is configured such that, by the second control-side bypass portion 26b and the second drive-side bypass portion 27b, the sum of the length of the second control-side conductive path, which is an example of the third conductive path, and the length of the second drive-side conductive path, which is an example of the fourth conductive path, approaches each other among the plurality of second power semiconductor elements 40B.

[0251] Also, in this embodiment, the first control-side bypass portion 21b and the first drive-side bypass portion 24b are respectively formed so as to reduce the variation between the total length of the third-end control-side conductive path and the length of the third-end drive-side conductive path and the total length of the fourth-end control-side conductive path and the length of the fourth-end drive-side conductive path.

[0252] Note that the total length of the third-end control-side conductive path and the length of the third-end drive-side conductive path is an example of the third sum described in the claims. Also, the total length of the fourth-end control-side conductive path and the length of the fourth-end drive-side conductive path is an example of the fourth sum described in the claims. For this reason, the power module 1B of this embodiment is configured such that, by the second control-side bypass portion 26b and the second drive-side bypass portion 27b, the third sum and the fourth sum approach each other.

[0253] (Effect) According to the power module 1B of this embodiment, in addition to the effects similar to those of the power module 1A of the first embodiment, the following effects can be obtained.

[0254] (2-1) The first control side connection part 21c of the first control layer 21 is made of a wire. Also, the first drive side connection part 24c of the first drive layer 24 is made of a wire. According to this configuration, since it can straddle other wirings provided on the substrate 10, the degree of freedom in arranging the first control side connection part 21c and the first drive side connection part 24c is increased. Therefore, it becomes easier to design the respective layouts of the first control layer 21 and the first drive layer 24.

[0255] [Application Example of Power Module] A circuit configuration example constituted by using power modules 1A and 1B will be described. In FIGS. 33 and 34, for the sake of convenience, the body diode 44 is shown omitted.

[0256] As a first example of the above circuit configuration, FIG. 33 shows a three-phase AC inverter 200 constituted by using power modules 1A and 1B. In the three-phase AC inverter 200, the power module 1A constituting the U-phase inverter, the power module 1A constituting the V-phase inverter, and the power module 1A constituting the W-phase inverter are connected in parallel with each other. The three-phase AC inverter 200 is configured to apply a SiCMOSFET as the power semiconductor element 40 and connect a snubber capacitor C between the power supply terminal PL and the ground terminal NL. It should be noted that it is also possible to realize a three-phase AC inverter (not shown) in which an IGBT is applied as the power semiconductor element 40 and a snubber capacitor C is connected between the power supply terminal PL and the ground terminal NL. In this case, the three-phase AC inverter 200 further includes a diode connected in anti-parallel to the IGBT.

[0257] As shown in FIG. 33, when the power modules 1A and 1B are connected to the power supply E and a switching operation is performed, since the switching speed of the SiCMOSFET is fast, a large surge voltage Ldi / dt is generated by the inductance L of the connection line. For example, assuming a current change di = 300A and a time change dt = 100 nsec accompanying switching, di / dt = 3×10 9 (A / s).

[0258] Depending on the value of the inductance L, the value of the surge voltage Ldi / dt changes, and this surge voltage Ldi / dt is superimposed on the power supply E. The snubber capacitor C connected between the power supply terminal PL and the ground terminal NL can absorb this surge voltage Ldi / dt.

[0259] As a second example of the above circuit configuration, FIG. 34 shows a three-phase AC inverter 210 configured using power modules 1A and 1B. The three-phase AC inverter 210 includes a power module section 212 connected to a gate driver 211, a power supply or battery 213, and a converter 214, and controls the drive of a three-phase AC motor section 215. The power module section 212 has a U-phase inverter, a V-phase inverter, and a W-phase inverter connected corresponding to the U-phase, V-phase, and W-phase of the three-phase AC motor section 215.

[0260] The gate driver 211 is connected to the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the U-phase inverter, the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the V-phase inverter, and the gate electrodes 43 of the first power semiconductor element group 40AT and the gate electrodes 43 of the second power semiconductor element group 40BT of the power module 1A constituting the W-phase inverter, respectively. Also, the gate driver 211 is connected to the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the U-phase inverter, the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the V-phase inverter, and the source electrodes 42 of the first power semiconductor element group 40AT and the source electrodes 42 of the second power semiconductor element group 40BT of the power module 1A constituting the W-phase inverter, respectively.

[0261] The power module unit 212 is connected between the plus terminal (+) P and the minus terminal (-) N of the converter 214 to which the power supply or storage battery (E) 213 is connected, and includes each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the U-phase inverter, each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the V-phase inverter, and each power semiconductor element group 40AT, 40BT of the power module 1A that constitutes the W-phase inverter.

[0262] Freewheel diodes 216 are respectively connected in reverse parallel between the source electrode 42 and the drain electrode 41 of each power semiconductor element group 40AT, 40BT of each phase inverter.

[0263] [Modification example] The above embodiments are examples of the forms that the power module according to the present disclosure can take, and are not intended to limit the form. The power module according to the present disclosure can take a form different from the forms exemplified in the above embodiments. An example thereof is a form in which a part of the configuration of the above embodiments is replaced, changed, or omitted, or a new configuration is added to the above embodiments. In the following modification examples, parts common to the above embodiments are denoted by the same reference numerals as those in the above embodiments, and the description thereof is omitted.

[0264] ·In the first embodiment described above, the first control layer 21 and the first drive layer 23 can be interchanged, and the first control layer 22 and the first drive layer 24 can be interchanged. In one example, as shown in FIG. 35, in the first substrate 11, in the longitudinal direction Y, the first control layer 21 is arranged adjacent to the first mounting layer 13A, and the first drive layer 23 is arranged on the side opposite to the first mounting layer 13A with respect to the first control layer 21.

[0265] The first control layer 21 extends in the lateral direction X. The shape of the first control layer 21 is the same as the shape of the first drive layer 23 in the first embodiment. The first control side connection member 32A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first control layer 21.

[0266] The shape of the first drive layer 23 is the same as that of the first control layer 21 in the first embodiment. The first drive layer 23 includes a first drive-side wiring portion 23a, a first drive-side detour portion 23b, a first drive-side connection portion 23c, and a first drive-side connection portion 23d. The first drive layer 23 is a single member in which the first drive-side wiring portion 23a, the first drive-side detour portion 23b, the first drive-side connection portion 23c, and the first drive-side connection portion 23d are integrally formed. In the vertical direction Y, the first drive-side detour portion 23b is disposed on the side opposite to the first control layer 21 with respect to the first drive-side wiring portion 23a. A first drive-side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first drive-side wiring portion 23a of the first drive layer 23. As shown in FIG. 35, the first drive-side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is not connected to the first drive-side detour portion 23b. A first detection terminal-side connection member 36A and a first drive layer connection member 94A are connected to the first drive-side connection portion 23d.

[0267] Also, in the second substrate 12, in the vertical direction Y, the first control layer 22 is disposed adjacent to the first mounting layer 13B, and the first drive layer 24 is disposed on the side opposite to the first mounting layer 13B with respect to the first control layer 22.

[0268] The shape of the first control layer 22 is the same as that of the first drive layer 24 of the first embodiment. The first control layer 22 includes a first control side wiring portion 22a, a first control side detour portion 22b, a first control side connection portion 22c, and a first control side connection portion 22d. The first control layer 22 is a single member in which the first control side wiring portion 22a, the first control side detour portion 22b, the first control side connection portion 22c, and the first control side connection portion 22d are integrally formed. In the vertical direction Y, the first control side detour portion 22b is disposed on the side opposite to the first control side wiring portion 22a with respect to the first drive layer 24. A first control side connection member 32A connected to each first power semiconductor element 40A of the second substrate 12 is connected to the first control side wiring portion 22a. As shown in FIG. 35, the first control side connection member 32A connected to each first power semiconductor element 40A of the second substrate 12 is not connected to the first control side detour portion 22b. A first control terminal side connection member 35A and a first control layer connection member 93A are connected to the first control side connection portion 22d. In plan view, the first control layer connection member 93A extends in the lateral direction X.

[0269] The shape of the first drive layer 24 is the same as that of the first control layer 22 of the first embodiment. The first drive layer 24 extends in the lateral direction X. In the vertical direction Y, the first drive layer 24 is disposed between the first control side wiring portion 22a and the first control side detour portion 22b. A first drive layer connection member 94A is connected to an end of the first drive layer 24 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X. In plan view, the first drive layer connection member 94A extends in the lateral direction X.

[0270] Also, as shown in FIG. 35, the arrangement positions of the first control terminal 53A and the first detection terminal 54A in the lateral direction X may be arranged in the reverse of the above first embodiment. Thereby, in plan view, it is possible to avoid the first control terminal side connection member 35A and the first detection terminal side connection member 36A from intersecting.

[0271] ·In the above first embodiment, the second control layer 25 and the second drive layer 27 can be interchanged, and the second control layer 26 and the second drive layer 28 can be interchanged. In one example, as shown in FIG. 36, in the first substrate 11, in the vertical direction Y, the second control layer 25 is arranged adjacent to the conductive layer 15A, and the second driving layer 27 is arranged on the side opposite to the conductive layer 15A with respect to the second control layer 25.

[0272] The shape of the second control layer 25 is the same as the shape of the second driving layer 27 in the first embodiment. The second control layer 25 has a second control side wiring portion 25a, a second control side detour portion 25b, a second control side connection portion 25c, and a second control side connection portion 25d. The second control layer 25 is a single member in which the second control side wiring portion 25a, the second control side detour portion 25b, the second control side connection portion 25c, and the second control side connection portion 25d are integrally formed. In the vertical direction Y, the second control side detour portion 25b is arranged on the side opposite to the second control side wiring portion 25a with respect to the second driving layer 27. A second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is connected to the second control side wiring portion 25a. As shown in FIG. 36, the second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is not connected to the second control side detour portion 25b. A second control terminal side connection member 35B and a second control layer connection member 93B are connected to the second control side connection portion 25d.

[0273] The shape of the second driving layer 27 is the same as the shape of the second control layer 25 in the first embodiment. The second driving layer 27 extends in the horizontal direction X. In the vertical direction Y, the second driving layer 27 is arranged between the second control side wiring portion 25a and the second control side detour portion 25b in the second control layer 25. A second driving layer connection member 94B is connected to the end portion of the second driving layer 27 in the first substrate 11 on the side of the fourth substrate side surface 11d in the horizontal direction X.

[0274] Also, in the second substrate 12, in the vertical direction Y, the second control layer 26 is arranged adjacent to the conductive layer 15B, and the second driving layer 28 is arranged on the side opposite to the conductive layer 15B with respect to the second control layer 26.

[0275] The shape of the second driving layer 28 is the same as the shape of the second control layer 26 of the first embodiment. The second driving layer 28 includes a second driving side wiring portion 28a, a second driving side detour portion 28b, a second driving side connecting portion 28c, and a second driving side connection portion 28d. The second driving layer 28 is a single member in which the second driving side wiring portion 28a, the second driving side detour portion 28b, the second driving side connecting portion 28c, and the second driving side connection portion 28d are integrally formed. In the vertical direction Y, the second driving side detour portion 28b is disposed on the side opposite to the second control layer 26 with respect to the second driving side wiring portion 28a. A second driving side connection member 33B connected to each second power semiconductor element 40B of the second substrate 12 is connected to the second driving side wiring portion 28a. As shown in FIG. 36, the second driving side connection member 33B connected to each second power semiconductor element 40B of the second substrate 12 is not connected to the second driving side detour portion 28b. A second detection terminal side connection member 36B and a second driving layer connection member 94B are connected to the second driving side connection portion 28d. In plan view, the second driving layer connection member 94B extends in the lateral direction X.

[0276] The shape of the second control layer 26 is the same as the shape of the second driving layer 28 of the first embodiment. The second control layer 26 extends in the lateral direction X. In the vertical direction Y, the second control layer 26 is disposed between the second driving side wiring portion 28a and the second driving side detour portion 28b. A second control layer connection member 93B is connected to an end portion of the second driving layer 28 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X. In plan view, the second control layer connection member 93B extends in the lateral direction X.

[0277] Also, as shown in FIG. 36, the arrangement positions of the second control terminal 53B and the second detection terminal 54B in the lateral direction X may be arranged in the reverse of the first embodiment. Thereby, in plan view, it is possible to avoid the second control terminal side connection member 35B and the second detection terminal side connection member 36B from intersecting.

[0278] ·In the second embodiment, the first control layer 21 and the first driving layer 23 can be interchanged, and the first control layer 22 and the first driving layer 24 can be interchanged. In one example, as shown in FIG. 37, in the first substrate 11, in the vertical direction Y, the first control layer 21 is arranged adjacent to the first mounting layer 13A, and the first driving layer 23 is arranged on the side opposite to the first mounting layer 13A with respect to the first control layer 21.

[0279] The first control layer 21 extends in the horizontal direction X. The shape of the first control layer 21 is the same as the shape of the first driving layer 23 in the second embodiment. A first control side connection member 32A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first control layer 21.

[0280] The shape of the first driving layer 23 is the same as the shape of the first control layer 21 in the second embodiment. The first driving layer 23 has a first driving side wiring portion 23a, a first driving side detour portion 23b, and a first driving side connection portion 23c. The first driving side wiring portion 23a, the first driving side detour portion 23b, and the first driving side connection portion 23c are formed individually. The first driving side wiring portion 23a and the first driving side detour portion 23b are each made of, for example, copper foil. The first driving side connection portion 23c is a wire made of, for example, wire bonding. In the vertical direction Y, the first driving side detour portion 23b is arranged on the side opposite to the first control layer 21 with respect to the first driving side wiring portion 23a. A first driving side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is connected to the first driving side wiring portion 23a of the first driving layer 23. As shown in FIG. 37, the first driving side connection member 33A connected to each first power semiconductor element 40A of the first substrate 11 is not connected to the first driving side detour portion 23b. A first detection terminal side connection member 36A and a first driving layer connection member 94A are connected to the first driving side connection portion 23d.

[0281] Also, in the second substrate 12, in the vertical direction Y, the first control layer 22 is arranged adjacent to the first mounting layer 13B, and the first driving layer 24 is arranged on the side opposite to the first mounting layer 13B with respect to the first control layer 22.

[0282] The shape of the first control layer 22 is the same as the shape of the first drive layer 24 of the first embodiment. The first control layer 22 includes a first control side wiring portion 22a, a first control side detour portion 22b, a first control side connection portion 22c, and a first control side connection portion 22d. The first control side wiring portion 22a, the first control side detour portion 22b, the first control side connection portion 22c, and the first control side connection portion 22d are formed individually, and the first control side detour portion 22b and the first control side connection portion 22d are integrally formed. The first control side wiring portion 22a, the first control side detour portion 22b, and the first control side connection portion 22d are each made of, for example, a copper foil. The first control side connection portion 22c is a wire made of, for example, wire bonding. In the vertical direction Y, the first control side detour portion 22b is disposed on the side opposite to the first control side wiring portion 22a with respect to the first drive layer 24. A first control side connection member 32A connected to each first power semiconductor element 40A of the second substrate 12 is connected to the first control side wiring portion 22a. As shown in FIG. 37, the first control side connection member 32A connected to each first power semiconductor element 40A of the second substrate 12 is not connected to the first control side detour portion 22b. A first control terminal side connection member 35A and a first control layer connection member 93A are connected to the first control side connection portion 22d. In plan view, the first control layer connection member 93A extends in the lateral direction X.

[0283] The shape of the first drive layer 24 is the same as the shape of the first control layer 22 of the first embodiment. The first drive layer 24 extends in the lateral direction X. In the vertical direction Y, the first drive layer 24 is disposed between the first control side wiring portion 22a and the first control side detour portion 22b. A first drive layer connection member 94A is connected to an end of the first drive layer 24 on the third substrate side surface 12c side of the second substrate 12 in the lateral direction X.

[0284] Also, as shown in FIG. 37, the arrangement positions of the first control terminal 53A and the first detection terminal 54A in the lateral direction X may be arranged in the reverse of the above-described first embodiment. Thereby, in plan view, it is possible to avoid the first control terminal side connection member 35A and the first detection terminal side connection member 36A from intersecting.

[0285] ·In the above-described second embodiment, the second control layer 25 and the second drive layer 27 can be swapped, and the second control layer 26 and the second drive layer 28 can be swapped. In one example, as shown in FIG. 38, on the first substrate 11, in the vertical direction Y, the second control layer 25 is arranged adjacent to the conductive layer 15A, and the second drive layer 27 is arranged on the side opposite to the conductive layer 15A with respect to the second control layer 25.

[0286] The shape of the second control layer 25 is the same as the shape of the second drive layer 27 in the second embodiment. The second control layer 25 has a second control side wiring portion 25a, a second control side detour portion 25b, a second control side connection portion 25c, and a second control side connection portion 25d. The second control side wiring portion 25a, the second control side detour portion 25b, and the second control side connection portion 25c are formed individually, and the second control side detour portion 25b and the second control side connection portion 25d are formed integrally. In the vertical direction Y, the second control side detour portion 25b is arranged on the side opposite to the second control side wiring portion 25a with respect to the second drive layer 27. A second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is connected to the second control side wiring portion 25a. As shown in FIG. 38, the second control side connection member 32B connected to each second power semiconductor element 40B of the first substrate 11 is not connected to the second control side detour portion 25b. A second control terminal side connection member 35B and a second control layer connection member 93B are connected to the second control side connection portion 25d.

[0287] The shape of the second drive layer 27 is the same as the shape of the second control layer 25 in the second embodiment. The second drive layer 27 extends in the horizontal direction X. In the vertical direction Y, the second drive layer 27 is arranged between the second control side wiring portion 25a and the second control side detour portion 25b in the second control layer 25. A second drive layer connection member 94B is connected to the end portion of the second drive layer 27 on the fourth substrate side surface 11d side of the first substrate 11 in the horizontal direction X.

[0288] Also, on the second substrate 12, in the vertical direction Y, the second control layer 26 is arranged adjacent to the conductive layer 15B, and the second drive layer 28 is arranged on the side opposite to the conductive layer 15B with respect to the second control layer 26.

[0289] The shape of the second driving layer 28 is the same as the shape of the second control layer 26 of the second embodiment. The second driving layer 28 includes a second driving side wiring portion 28a, a second driving side detour portion 28b, and a second driving side connecting portion 28c. The second driving side wiring portion 28a, the second driving side detour portion 28b, and the second driving side connecting portion 28c are formed individually. In the vertical direction Y, the second driving side detour portion 28b is disposed on the side opposite to the second control layer 26 with respect to the second driving side wiring portion 28a. A second driving side connection member 33B connected to each second power semiconductor element 40B of the second substrate 12 is connected to the second driving side wiring portion 28a. As shown in FIG. 38, the second driving side connection member 33B connected to each second power semiconductor element 40B of the second substrate 12 is not connected to the second driving side detour portion 28b. A second detection terminal side connection member 36B and a second driving layer connection member 94B are connected to the second driving side connection portion 28d.

[0290] The shape of the second control layer 26 is the same as the shape of the second driving layer 28 of the second embodiment. The second control layer 26 extends in the horizontal direction X. In the vertical direction Y, the second control layer 26 is disposed between the second driving side wiring portion 28a and the second driving side detour portion 28b. A second control layer connection member 93B is connected to an end portion of the second driving layer 28 on the third substrate side surface 12c side of the second substrate 12 in the horizontal direction X. In plan view, the second control layer connection member 93B extends in the horizontal direction X.

[0291] Also, as shown in FIG. 38, the arrangement positions of the second control terminal 53B and the second detection terminal 54B in the horizontal direction X may be arranged in the reverse of the first embodiment. Thereby, in plan view, it is possible to avoid the second control terminal side connection member 35B and the second detection terminal side connection member 36B from intersecting.

[0292] · In the above-described second embodiment, the first control layer 21 may have a first control-side connection portion 21d as in the first embodiment. The first control-side connection portion 21d is formed at an end portion on the fourth substrate side surface 11d side of the first substrate 11 in the first control-side detour portion 21b in the lateral direction X. In this case, the length of the first control-side wiring portion 21a of the first control layer 21 in the lateral direction X is shortened. The first control-side connection portion 21d can be formed such that the first control layer connection member 93A extends along the lateral direction X in a plan view.

[0293] · In the above-described second embodiment, the second control layer 26 may have a second control-side connection portion 26d as in the first embodiment. The second control-side connection portion 26d is formed at an end portion on the third substrate side surface 12c side of the second substrate 12 in the second control-side detour portion 26b in the lateral direction X. In this case, the length of the second control-side wiring portion 26a of the second control layer 26 in the lateral direction X is shortened. The second control-side connection portion 26d can be formed such that the second control layer connection member 93B extends along the lateral direction X in a plan view.

[0294] · In the above-described second embodiment, the first control-side connection portion 21c of the first control layer 21 may be formed of a strip-shaped thin plate instead of a wire. As the material of the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy is used.

[0295] · In the above-described second embodiment, the first drive-side connection portion 24c of the first drive layer 24 may be formed of a strip-shaped thin plate instead of a wire. As the material of the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy is used.

[0296] · In the above-described second embodiment, the second control-side connection portion 26c of the second control layer 26 may be formed of a strip-shaped thin plate instead of a wire. As the material of the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy is used.

[0297] · In the above-described second embodiment, the second driving side connecting portion 27c of the second driving layer 27 may be formed of a strip-shaped thin plate instead of a wire. As the material of the strip-shaped thin plate, Cu or a Cu alloy, or Al or an Al alloy is used.

[0298] · In each of the above embodiments, at least one of the first element connection member 31A and the second element connection member 31B may be constituted by one or a plurality of wires. · In each of the above embodiments, at least one of the connecting members 90A to 90C may be constituted by one or a plurality of wires.

[0299] · In each of the above embodiments, the configuration of the power semiconductor element 40 (40A, 40B) can be arbitrarily changed. In one example, as shown in FIG. 39, a source electrode 42 and a gate electrode 43 are formed on the element main surface 40s of the first power semiconductor element 40A. The source electrode 42 is formed over most of the element main surface 40s. In the present embodiment, the source electrode 42 includes a first source electrode 42D and a second source electrode 42E. In plan view, the first source electrode 42D and the second source electrode 42E are arranged spaced apart in the lateral direction X. In plan view, the gate electrode 43 is arranged in a recess 42x formed in the source electrode 42. In FIG. 39, the first driving side connection member 33A is connected to the second source electrode 42E. Note that the first driving side connection member 33A may be connected to the first source electrode 42D. Also, the second power semiconductor element 40B can be changed as shown in FIG. 39.

[0300] · In each of the above embodiments, either the first output terminal 52A or the second output terminal 52B may be omitted. · In each of the above embodiments, the substrate 10 may be configured such that the first substrate 11 and the second substrate 12 are integrally formed. In this case, the connecting members 90A to 90C are omitted. Also, the first control layer 21 and the first control layer 22 may be integrated. In this case, the first control layer connection member 93A is omitted. Also, the first driving layer 23 and the first driving layer 24 may be integrated. In this case, the first driving layer connection member 94A is omitted. Also, the second control layer 25 and the second control layer 26 may be integrated. In this case, the second control layer connection member 93B is omitted. Also, the second driving layer 27 and the second driving layer 28 may be integrated. In this case, the second driving layer connection member 94B is omitted.

[0301] · In each of the above embodiments, either the first substrate 11 or the second substrate 12 may be omitted from the substrate 10. When the second substrate 12 is omitted from the substrate 10, the first mounting layer 13B, the second mounting layer 14B, the conductive layer 15B, the first control layer 22, the first driving layer 24, the second control layer 26, the second driving layer 28, and the power semiconductor elements 40A and 40B of the second substrate 12 are mainly omitted. Also, when the first substrate 11 is omitted from the substrate 10, the first mounting layer 13A, the second mounting layer 14A, the conductive layer 15A, the first control layer 21, the first driving layer 23, the second control layer 25, the second driving layer 27, and the power semiconductor elements 40A and 40B of the first substrate 11 are mainly omitted.

[0302] · In each of the above embodiments, the power current terminal 55 may be omitted. In this case, the power current detection side connection member 34 is omitted. · In each of the above embodiments, the thermistor 17 may be omitted. In addition, the thermistor mounting layer 16, the pair of temperature detection terminals 56, and the pair of thermistor side connection members 37 may be omitted.

[0303] · In each of the above embodiments, the power module may have a configuration including one substrate, a mounting layer, a conductive layer, a control layer, and a driving layer disposed on the main surface of the substrate, a plurality of power semiconductor devices disposed on the mounting layer, a control terminal, and a detection terminal. In this case, a detour portion is formed in at least one of the control layer and the driving layer such that the total length of the control-side conductive path and the driving-side conductive path in the plurality of power semiconductor devices approaches each other.

[0304] (Appended Note) Next, the technical ideas that can be grasped from each of the above embodiments and each of the above modification examples will be described. (Appended Note 1) A substrate having a main surface of the substrate and a back surface of the substrate facing opposite sides in the thickness direction and having electrical insulation, A mounting layer, a control layer, and a driving layer each having conductivity formed on the main surface of the substrate, A power semiconductor device mounted on the mounting layer and having an element back surface on which a first driving electrode electrically connected to the mounting layer is formed and an element main surface on which a second driving electrode and a control electrode are formed, A control-side connection member connecting the control electrode and the control layer, A driving-side connection member connecting the second driving electrode and the driving layer, A control terminal electrically connected to the control layer, A detection terminal electrically connected to the driving layer, and a power module including the same, The power semiconductor device is one of a plurality of power semiconductor devices provided on the mounting layer in a state of being arranged in one direction when viewed from the thickness direction, The control-side connection member is one of a plurality of control-side connection members corresponding to each one of the plurality of power semiconductor devices, The driving-side connection member is one of a plurality of driving-side connection members corresponding to each one of the plurality of power semiconductor devices, The path between the control electrode and the control terminal is defined as a first conductive path, and the path between the second driving electrode and the detection terminal is defined as a second conductive path. At least one of the control layer and the drive layer has a detour portion that detours so that the sum of the length of the first conductive path and the length of the second conductive path approaches each other among the plurality of power semiconductor elements. Power module.

[0305] (Appendix 2) A substrate having a substrate front surface and a substrate back surface facing opposite sides in the thickness direction and having electrical insulation, A mounting layer, a control layer, and a drive layer each having conductivity formed on the substrate front surface, Elements mounted on the mounting layer, having an element back surface on which a first drive electrode electrically connected to the mounting layer is formed, and an element front surface on which a second drive electrode and a control electrode are formed, and a plurality of power semiconductor elements mounted on the mounting layer in a state of being arranged in one direction when viewed from the thickness direction, Those connecting the control electrodes of the plurality of power semiconductor elements and the control layer, and a plurality of control-side connection members arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements, Those connecting the second drive electrodes of the plurality of power semiconductor elements and the drive layer, and a plurality of drive-side connection members arranged in the same direction as the arrangement direction of the plurality of power semiconductor elements, A control terminal electrically connected to the control layer, A power module including a detection terminal electrically connected to the drive layer, The plurality of power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element at both ends in the arrangement direction, The path between the control electrode of the first end power semiconductor element and the control terminal is defined as a first control-side conductive path, the path between the second drive electrode of the first end power semiconductor element and the detection terminal is defined as a first drive-side conductive path, and the sum of the length of the first control-side conductive path and the length of the first drive-side conductive path is defined as a first sum, The path between the control electrode and the control terminal of the second-terminal power semiconductor device is defined as a second control-side conductive path, and the path between the second drive electrode and the detection terminal of the second-terminal power semiconductor device is defined as a second drive-side conductive path. When the sum of the length of the second control-side conductive path and the length of the second drive-side conductive path is defined as a second sum, at least one of the control layer and the drive layer has a detour portion that detours the conductive path so that the first sum and the second sum approach each other. Power module.

[0306] (Appendix 3) When the one direction is defined as a first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, each of the control layer and the drive layer has a wiring portion extending in the first direction, the detour portion is arranged spaced apart from the wiring portion in the second direction and extends in the first direction. The power module according to Appendix 1 or 2.

[0307] (Appendix 4) at least one of the control layer and the drive layer has a connecting portion connecting the detour portion and the wiring portion, the wiring portion, the detour portion, and the connecting portion are formed of a single member integrally formed. The power module according to Appendix 3.

[0308] (Appendix 5) at least one of the control layer and the drive layer has a connecting portion connecting the detour portion and the wiring portion, the connecting portion is formed of a wire. The power module according to Appendix 3.

[0309] (Appendix 6) the drive layer is arranged closer to the mounting layer side than the control layer. The power module according to any one of Appendices 1 to 5.

[0310] (Appendix 7) The control layer has the bypass portion, The bypass portion is disposed on the side opposite to the drive layer with respect to the wiring portion of the control layer. The power module according to Appendix 6.

[0311] (Appendix 8) The drive layer has the bypass portion, The bypass portion is disposed on the side opposite to the mounting layer with respect to the control layer. The power module according to Appendix 6.

[0312] (Appendix 9) The control-side connection member and the drive-side connection member are not connected to the bypass portion. The power module according to any one of Appendices 1 to 8.

[0313] (Appendix 10) When the one direction is defined as the first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as the second direction, As viewed from the thickness direction, at least one of the control-side connection member and the drive-side connection member extends in the second direction. The power module according to any one of Appendices 1 to 9.

[0314] (Appendix 11) The control terminal and the control layer are electrically connected by a control-terminal-side connection member, The detection terminal and the drive layer are electrically connected by a detection-terminal-side connection member. The power module according to any one of Appendices 1 to 10.

[0315] (Appendix 12) The control layer has the bypass portion and a first connection portion formed at the tip of the bypass portion to which the control-terminal-side connection member is connected. The power module according to Appendix 11.

[0316] (Appendix 13) The drive layer has the detour portion and a second connection portion formed at the tip of the detour portion to which the detection terminal side connection member is connected. The power module according to appended note 11 or 12.

[0317] (Appended note 14) The substrate has a first substrate and a second substrate. On the main surfaces of the first substrate and the second substrate, the mounting layer, the control layer, and the drive layer are respectively arranged. On the mounting layer of the first substrate and the mounting layer of the second substrate, the plurality of power semiconductor elements are respectively arranged in the one direction. The first substrate and the second substrate are arranged to be spaced apart from each other in the one direction. The mounting layer of the first substrate and the mounting layer of the second substrate are electrically connected by a mounting layer connection member. The control layer of the first substrate and the control layer of the second substrate are electrically connected by a control layer connection member. The drive layer of the first substrate and the drive layer of the second substrate are electrically connected by a drive layer connection member. One of the control layer and the drive layer of the first substrate has the detour portion. The other of the control layer and the drive layer of the second substrate has the detour portion. The power module according to any one of appended notes 1 to 13.

[0318] (Appended note 15) When the one direction is defined as the first direction and the direction intersecting the first direction as viewed from the thickness direction is defined as the second direction, As viewed from the second direction, the control terminal and the detection terminal are respectively arranged so as to overlap the second substrate. The power module according to appended note 14.

[0319] (Appended note 16) The power semiconductor element is made of SiCMOSFET. The first drive electrode is a drain electrode, the second drive electrode is a source electrode, and the control electrode is a gate electrode. The power module according to any one of Appendices 1 to 15.

[0320] (Appendix 17) A substrate having a substrate front surface and a substrate back surface facing opposite sides in the thickness direction and having electrical insulation, and A first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer each having conductivity formed on the substrate front surface; A first power semiconductor element mounted on the first mounting layer and having a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element front surface on which a control electrode is formed; A second power semiconductor element mounted on the second mounting layer and having a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, a second drive electrode electrically connected to a second input terminal, and a second element front surface on which a control electrode is formed; A first control side connection member connecting the control electrode of the first power semiconductor element and the first control layer; A first drive side connection member connecting the second drive electrode of the first power semiconductor element and the first drive layer; A second control side connection member connecting the control electrode of the second power semiconductor element and the second control layer; A second drive side connection member connecting the second drive electrode of the second power semiconductor element and the second drive layer; A first control terminal electrically connected to the first control layer; A second control terminal electrically connected to the second control layer; A first detection terminal electrically connected to the first drive layer; A power module including a second detection terminal electrically connected to the second drive layer, The first power semiconductor device is one of a plurality of first power semiconductor devices provided on the first mounting layer in a state of being arranged in one direction when viewed from the thickness direction, The first control-side connection member is one of a plurality of first control-side connection members corresponding to one of the plurality of first power semiconductor devices, The first drive-side connection member is one of a plurality of first drive-side connection members corresponding to one of the plurality of first power semiconductor devices, A path between the control electrode of the first power semiconductor device and the first control terminal is defined as a first conductive path, and a path between the second drive electrode of the first power semiconductor device and the first detection terminal is defined as a second conductive path, At least one of the first control layer and the first drive layer has a first detour portion that detours so that the sum of the length of the first conductive path and the length of the second conductive path approaches each other among the plurality of first power semiconductor devices, Power module.

[0321] (Appendix 18) A substrate having a substrate front surface and a substrate back surface facing opposite sides in the thickness direction and having electrical insulation, A first control layer, a second control layer, a first drive layer, a second drive layer, a first mounting layer, a second mounting layer, and a conductive layer, each having conductivity, formed on the substrate front surface, One mounted on the first mounting layer, having a first element back surface formed with a first drive electrode electrically connected to a first input terminal, a second drive electrode electrically connected to an output terminal, and a first element front surface formed with a control electrode, and a plurality of first power semiconductor devices mounted on the first mounting layer in a state of being arranged in one direction when viewed from the thickness direction, One mounted on the second mounting layer, having a second element back surface formed with a first drive electrode electrically connected to the output terminal, a second drive electrode electrically connected to a second input terminal, and a second element front surface formed with a control electrode, and a plurality of second power semiconductor devices mounted on the second mounting layer in the arranged state in the one direction, It connects the control electrodes of the plurality of first power semiconductor elements and the first control layer, and includes a plurality of first control-side connection member...

Claims

1. a substrate having a main surface and a rear surface facing opposite each other in a thickness direction, the substrate having electrical insulation properties; a first control layer, a second control layer, a first driving layer, a second driving layer, a first mounting layer, a second mounting layer, and a conductive layer, each of which has electrical conductivity and is formed on a main surface of the substrate; a first element back surface on which a first drive electrode electrically connected to a first input terminal is formed, a second drive electrode electrically connected to an output terminal, and a first element main surface on which a control electrode is formed, the first power semiconductor elements being mounted on the first mounting layer in a state of being arranged in one direction as viewed from the thickness direction; a second element main surface on which a control electrode is formed and a second element back surface on which a first drive electrode electrically connected to the output terminal is formed, and a second element main surface on which a control electrode is formed and a second drive electrode electrically connected to the second input terminal is formed, and a plurality of second power semiconductor elements are mounted on the second mounting layer in a state of being arranged in the one direction; a plurality of first control side connection members that connect the control electrodes of the plurality of first power semiconductor elements and the first control layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of first drive side connection members that connect second drive electrodes of the plurality of first power semiconductor elements to the first drive layer and are arranged in the same direction as the arrangement direction of the plurality of first power semiconductor elements; a plurality of second control side connection members that connect the control electrodes of the plurality of second power semiconductor elements and the second control layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a plurality of second drive side connection members that connect second drive electrodes of the second power semiconductor elements and the second drive layer and are arranged in the same direction as the arrangement direction of the plurality of second power semiconductor elements; a first control terminal electrically connected to the first control layer; A second control terminal electrically connected to the second control layer; a first detection terminal electrically connected to the first driving layer; a second detection terminal electrically connected to the second driving layer, the plurality of first power semiconductor elements include a first end power semiconductor element and a second end power semiconductor element that are located at both ends in an arrangement direction of the plurality of first power semiconductor elements, a path between the control electrode and the first control terminal of the first-end power semiconductor element is defined as a first-end control-side conductive path, a path between the second drive electrode and the first detection terminal of the first-end power semiconductor element is defined as a first-end drive-side conductive path, and a sum of a length of the first-end control-side conductive path and a length of the first-end drive-side conductive path is defined as a first sum; A path between the control electrode and the first control terminal of the second-end power semiconductor element is defined as a second-end control side conductive path, a path between the second drive electrode and the first detection terminal of the second-end power semiconductor element is defined as a second-end drive side conductive path, and a sum of a length of the second-end control side conductive path and a length of the second-end drive side conductive path is defined as a second sum, At least one of the first control layer and the first driving layer has a first detour portion that detours a conductive path so that the first sum and the second sum approach each other. Power module.

2. When the one direction is defined as a first direction and a direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, the second mounting layer is disposed between the first mounting layer and the conductive layer in the second direction; the first control layer and the first drive layer are disposed on the opposite side of the first mounting layer from the second mounting layer, The second control layer and the second drive layer are disposed on the opposite side of the conductive layer from the second mounting layer. The power module according to claim 1 .

3. the first control layer and the first drive layer each have a first wiring portion extending in the first direction, The first detour portion is disposed apart from the first wiring portion in the second direction and extends in the first direction. The power module according to claim 2 .

4. At least one of the first control layer and the first drive layer has a first coupling portion that couples the first detour portion and the first wiring portion, The first wiring portion, the first detouring portion, and the first connecting portion are formed as a single member. The power module according to claim 3 .

5. At least one of the first control layer and the first drive layer has a first coupling portion that couples the first detour portion and the first wiring portion, The first connecting portion is made of a wire. The power module according to claim 3 .

6. When the one direction is defined as a first direction and a direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, the first driving layer is disposed adjacent to the first mounting layer in the second direction, The first control layer is disposed on the opposite side of the first drive layer from the first mounting layer. The power module according to any one of claims 1 to 5.

7. the first control layer has the first detour portion, The first detour portion is disposed on the opposite side of the first wiring portion of the first control layer to the first drive layer. The power module according to claim 6.

8. the first driving layer has the first detour portion, The first detour portion is disposed on the opposite side of the first control layer from the first mounting layer. The power module according to claim 6.

9. The first control side connecting member and the first drive side connecting member are not connected to the first detour portion. The power module according to any one of claims 1 to 8.

10. the first control terminal and the first control layer are electrically connected by a first control terminal side connecting member, The first detection terminal and the first driving layer are electrically connected by a first detection terminal side connecting member. The power module according to any one of claims 1 to 9.

11. The first control layer has the first detour portion and a first connection portion formed at a tip end portion of the first detour portion and connected to the first control terminal side connection member. The power module according to claim 10.

12. The first driving layer has the first detour portion and a second connection portion formed at a tip end portion of the first detour portion and connected to the first detection terminal side connection member. The power module according to claim 10.

13. The substrate includes a first substrate and a second substrate, the first control layer, the second control layer, the first driving layer, the second driving layer, the first mounting layer, the second mounting layer, and the conductive layer are disposed on the main substrate surfaces of the first substrate and the second substrate, respectively; the first mounting layer of the first substrate and the first mounting layer of the second substrate each include a plurality of first power semiconductor elements arranged spaced apart from each other in the one direction; the second mounting layer of the first substrate and the second mounting layer of the second substrate each include a plurality of second power semiconductor elements arranged spaced apart from each other in the one direction; The first substrate and the second substrate are arranged apart from each other in the one direction, the first mounting layer of the first substrate and the first mounting layer of the second substrate are electrically connected by a first mounting layer connection member; the first control layer of the first substrate and the first control layer of the second substrate are electrically connected by a first control layer connecting member; the first driving layer of the first substrate and the first driving layer of the second substrate are electrically connected by a first driving layer connection member; one of the first control layer and the first drive layer of the first substrate has the first detour portion, The other of the first control layer and the first drive layer of the second substrate has the first detour portion. The power module according to any one of claims 1 to 12.

14. When the one direction is defined as a first direction and a direction intersecting the first direction as viewed from the thickness direction is defined as a second direction, When viewed from the second direction, the first control terminal and the first detection terminal are each disposed so as to overlap with the second substrate.

14. The power module according to claim 13.

15. the first substrate and the second substrate are each disposed such that the first drive layer is adjacent to the first mounting layer in the second direction, and the first control layer is disposed on an opposite side of the first drive layer from the first mounting layer, the first control layer of the first substrate has the first detour portion, the first driving layer of the second substrate has the first detour portion, a length of the first detour portion of the first control layer of the first substrate is shorter than a length of the first detour portion of the first driving layer of the second substrate; The length of the first control side connecting member is longer than the length of the first drive side connecting member.

15. The power module according to claim 14.

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