Method for manufacturing a semiconductor chip

Abstract

This semiconductor chip production method comprises, in this order: step (S1) for preparing a semiconductor chip fabrication wafer comprising a semiconductor wafer having a bump-formed surface provided with a bump, the bump-formed surface having a groove formed therein as a planned division line without reaching a back surface of the wafer; step (S2) for pressing and affixing a first curable resin (x1) onto the bump-formed surface of the semiconductor chip fabrication wafer, coating the bump-formed surface of the semiconductor chip fabrication wafer with the first curable resin (x1), and embedding the first curable resin (x1) in the groove formed in the semiconductor chip fabrication wafer; step (S3) for curing the first curable resin (x1) to obtain a semiconductor chip fabrication wafer with a first cured resin film (r1); and a step (S4) for singulating the semiconductor chip fabrication wafer with the first cured resin film (r1) along the planned division line, and obtaining a semiconductor chip in which at least the bump-formed surface and a side surface are coated with the first cured resin film (r1). The semiconductor chip production method further comprises, after step (S2) and before step (S3), after step (S3) and before step (S4), or in step (S4), a step (S-BG) for grinding the back surface of the semiconductor chip fabrication wafer.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor chip. More specifically, the present invention relates to a method for manufacturing a semiconductor chip provided with a cured resin film as a protective film.

Background Art

[0002] In recent years, semiconductor devices have been manufactured using a mounting method called the so-called face-down method. In the face-down method, a semiconductor chip having bumps on its circuit surface and a substrate for mounting the semiconductor chip are laminated such that the circuit surface of the semiconductor chip faces the substrate, thereby mounting the semiconductor chip on the substrate. Note that the semiconductor chip is usually obtained by singulating a semiconductor wafer having bumps on its circuit surface.

[0003] A protective film may be provided on a semiconductor wafer having bumps for the purpose of protecting the bonding portion between the bumps and the semiconductor wafer (hereinafter also referred to as "bump neck"). For example, in Patent Document 1 and Patent Document 2, a laminate in which a support substrate, an adhesive layer, and a thermosetting resin layer are laminated in this order is pressed against the bump formation surface of a semiconductor wafer having bumps with the thermosetting resin layer as the bonding surface, and then the thermosetting resin layer is heated and cured to form a protective film.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] In recent years, as miniaturization and thinning of IC-embedded products such as electronic devices have progressed, further thinning of semiconductor chips has been required. However, when the semiconductor chip becomes thinner, the strength of the semiconductor chip decreases. Therefore, for example, when transporting the semiconductor chip or performing post-processes such as packaging the semiconductor chip, there is a problem that the semiconductor chip is likely to be damaged. Therefore, it is conceivable to form a protective film on the bump formation surface of the semiconductor wafer to protect the bump neck and improve the strength of the semiconductor chip. However, simply forming a protective film on the bump formation surface of the semiconductor wafer is insufficient to improve the strength of the semiconductor chip. In addition, the protective film may cause film peeling.

[0006] The present invention has been made in view of such problems, and an object thereof is to provide a method for manufacturing a semiconductor chip that is excellent in strength and suppresses peeling of the protective film.

Means for Solving the Problems

[0007] The present inventors conceived that by providing a protective film provided for the purpose of protecting the bump neck also on the side surface of the semiconductor chip, the strength of the semiconductor chip can be improved, peeling of the protective film can be suppressed, and an extremely reasonable configuration can be constructed. As a result of intensive studies based on the idea, a manufacturing method capable of realizing the idea was found, and the present invention was completed.

[0008] That is, the present invention relates to the following [1] to

[14] . [1] Including the following steps (S1) to (S4) in this order, · Step (S1): A step of preparing a semiconductor chip manufacturing wafer having a bump formation surface with bumps, in which a groove portion as a planned division line is formed on the bump formation surface without reaching the back surface. · Step (S2): Press and attach a first curable resin (x1) to the bump formation surface of the wafer for manufacturing the semiconductor chip, coat the bump formation surface of the wafer for manufacturing the semiconductor chip with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the wafer for manufacturing the semiconductor chip. · Step (S3): Cure the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1). · Step (S4): Singulate the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned dividing line to obtain semiconductor chips in which at least the bump formation surface and the side surfaces are coated with the first cured resin film (r1). Furthermore, a method for manufacturing a semiconductor chip, including the following step (S-BG), after the step (S2) and before the step (S3), after the step (S3) and before the step (S4), or in the step (S4). · Step (S-BG): Grind the back surface of the wafer for manufacturing the semiconductor chip. [2] The step (S2) is carried out by pressing and attaching a first laminate (α1) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the wafer for manufacturing the semiconductor chip, with the layer (X1) as the attachment surface. The method for manufacturing a semiconductor chip according to [1] above. [3] Include the step (S-BG) after the step (S2) and before the step (S3). The step (S-BG) is carried out by grinding the back surface of the wafer for manufacturing the semiconductor chip with the first laminate (α1) attached, and then peeling the first support sheet (Y1) from the first laminate (α1). The step (S4) is carried out by cutting the portion of the first cured resin film (r1) formed in the groove of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned dividing line. The method for manufacturing a semiconductor chip according to [2] above. [4] Include the step (S-BG) after the step (S3) and before the step (S4), Perform the step (S3) without peeling the first support sheet (Y1) from the first laminate (α1), The step (S-BG) is performed by grinding the back surface of the semiconductor chip manufacturing wafer with the first laminate (α1) attached, and then peeling the first support sheet (Y1) from the first laminate (α1), The step (S4) is performed by cutting the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) formed in the groove portion along the planned division line. The method for manufacturing a semiconductor chip according to [2] above. [5] Include the step (S-BG) after the step (S3) and before the step (S4), After the step (S2) and before the step (S3), peel the first support sheet (Y1) from the first laminate (α1), The step (S-BG) is performed by attaching a back grind sheet (b-BG) to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1), grinding the back surface of the semiconductor chip manufacturing wafer with the back grind sheet (b-BG) attached, and then peeling the back grind sheet (b-BG) from the semiconductor chip manufacturing wafer with the first cured resin film (r1), The step (S4) is performed by cutting the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) formed in the groove portion along the planned division line. The method for manufacturing a semiconductor chip according to [2] above. [6] Include the step (S-BG) in the step (S4), After the step (S2) and before the step (S3), peel the first support sheet (Y1) from the first laminate (α1), The step (S4) is to cut along the planned division line in the portion of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) that is formed in the groove portion, or to form a modified region along the planned division line, and then, as the step (S-BG), attach a back grinding sheet (b-BG) to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1), and grind the back surface of the wafer for manufacturing a semiconductor chip in a state where the back grinding sheet (b-BG) is attached, which is the method for manufacturing a semiconductor chip according to [2] above. [7] The method for manufacturing a semiconductor chip according to any one of [1] to [6] above, further including the following step (T). · Step (T): A step of forming a second cured resin film (r2) on the back surface of the wafer for manufacturing a semiconductor chip. [8] The method for manufacturing a semiconductor chip according to any one of [1] to [7] above, further including the following step (U). · Step (U): A step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) attached to a part of the top of the bump to expose the top of the bump. [9] The method for manufacturing a semiconductor chip according to [8] above, wherein the step (U) is performed by a plasma etching process.

[10] When performing a strain dispersion measurement of measuring the shear elastic modulus G' of the test piece of the layer (X1) by generating a 400% strain in the test piece of the layer (X1) under the conditions of a temperature of 90°C and a frequency of 1 Hz, the shear elastic modulus G' is 5.0×10 Pa to 1.0×10 6 Pa, which is the method for manufacturing a semiconductor chip according to any one of [1] to [9] above.

[11] The method for manufacturing a semiconductor chip according to any one of [1] to

[10] above, wherein the thickness of the layer (X1) is 10 μm or more and 200 μm or less.

[12] The method for manufacturing a semiconductor chip according to any one of [1] to

[11] above, wherein the width of the groove portion is 10 μm to 2000 μm.

[13] The method for manufacturing a semiconductor chip according to any one of [1] to

[12] above, wherein the depth of the groove portion is 30 μm to 700 μm.

[14] The method for manufacturing a semiconductor chip according to any one of [1] to

[13] above, wherein the first cured resin film (r1) is transparent.

Advantages of the Invention

[0009] According to the present invention, it is possible to provide a method for manufacturing a semiconductor chip that is excellent in strength and in which peeling of the protective film is suppressed.

Brief Description of the Drawings

[0010]

Figure 1

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Figure 14

[0011] In this specification, the "active ingredient" refers to the ingredient among the ingredients contained in the target composition excluding dilution solvents such as water and organic solvents. Also, in this specification, "(meth)acrylic acid" means both "acrylic acid" and "methacrylic acid", and the same applies to other similar terms. Also, in this specification, the weight average molecular weight and the number average molecular weight are polystyrene conversion values measured by gel permeation chromatography (GPC) method. Also, in this specification, for preferable numerical ranges (for example, ranges such as content), the lower limit value and the upper limit value described stepwise can be combined independently. For example, from the description "preferably 10 to 90, more preferably 30 to 60", it is also possible to combine the "preferable lower limit value (10)" and the "more preferable upper limit value (60)" to obtain "10 to 60".

[0012] [Method for Manufacturing a Semiconductor Chip of the Present Invention] A schematic diagram of the steps of the method for manufacturing a semiconductor chip of the present invention is shown in FIG. 1. The method for manufacturing a semiconductor chip of the present invention generally includes a step (S1) of preparing a wafer for manufacturing a semiconductor chip, a step (S2) of attaching a first laminate (α1), a step (S3) of curing a first curable resin (x1), and a step (S4) of singulating, and further includes a step (S-BG) of grinding the back surface of the wafer for manufacturing a semiconductor chip.

[0013] Specifically, the method for manufacturing a semiconductor chip of the present invention includes the following steps (S1) to (S4) in this order. · Step (S1): Prepare a wafer for manufacturing semiconductor chips, having a bump formation surface with bumps, on which a groove as a planned division line is formed without reaching the back surface on the bump formation surface of the semiconductor wafer. · Step (S2): Press and attach a first curable resin (x1) to the bump formation surface of the wafer for manufacturing semiconductor chips, coat the bump formation surface of the wafer for manufacturing semiconductor chips with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the wafer for manufacturing semiconductor chips. · Step (S3): Cure the first curable resin (x1) to obtain a wafer for manufacturing semiconductor chips with a first cured resin film (r1). · Step (S4): Singulate the wafer for manufacturing semiconductor chips with the first cured resin film (r1) along the planned division line to obtain semiconductor chips at least with the bump formation surface and side surfaces coated with the first cured resin film (r1). Furthermore, after step (S2) and before step (S3), after step (S3) and before step (S4), or in step (S4), the following step (S - BG) is included. · Step (S - BG): Grind the back surface of the wafer for manufacturing semiconductor chips.

[0014] By the manufacturing method including the above steps, semiconductor chips with excellent strength and difficult to peel the first cured resin film (r1) as a protective film, in which not only the bump formation surface but also the side surfaces are coated with the first cured resin film (r1), can be obtained. Here, "coated" means that the first cured resin film (r1) is formed along the shape of the semiconductor chip on at least the bump formation surface and side surfaces of one semiconductor chip. That is, the present invention is clearly different from the encapsulation technology of confining a plurality of semiconductor chips in resin.

[0015] Hereinafter, the manufacturing method of the semiconductor chip of the present invention will be described in detail for each step. In the following description, "semiconductor chip" is also simply referred to as "chip", and "semiconductor wafer" is also simply referred to as "wafer".

[0016] [Process (S1)] Regarding an example of the semiconductor wafer prepared in process (S1), a top view is shown in FIG. 2 and a schematic cross-sectional view is shown in FIG. 3. In process (S1), a semiconductor chip manufacturing wafer 10 is prepared, in which a groove portion 13 as a planned division line is formed on the bump formation surface 11a of the semiconductor wafer 11 having the bump formation surface 11a provided with bumps 12 without reaching the back surface 11b. In addition, in FIG. 2, the bumps are not shown. Further, the figures used in the following description may show an enlarged view of the main part for the sake of easy understanding of the features of the present invention, and the dimensional ratios of each component are not necessarily the same as the actual ones.

[0017] The shape of the bump 12 is not particularly limited, and any shape may be used as long as it can be fixed by contacting an electrode or the like on a substrate for chip mounting. For example, in FIG. 3, the bump 12 is spherical, but the bump 12 may be an ellipsoid of revolution. The ellipsoid of revolution may be, for example, an ellipsoid of revolution extended in a direction perpendicular to the bump formation surface 11a of the wafer 11, or an ellipsoid of revolution extended in a horizontal direction with respect to the bump formation surface 11a of the wafer 11. Further, the bump 12 may be in the shape of a pillar.

[0018] The height of the bump 12 is not particularly limited and is appropriately changed according to the design requirements. Illustratively, it is 30 μm to 300 μm, preferably 60 μm to 250 μm, more preferably 80 μm to 200 μm. Note that the "height of the bump 12" means the height at the position that is the highest from the bump formation surface 11a when focusing on one bump.

[0019] The number of the bumps 12 is not particularly limited and is appropriately changed according to the design requirements.

[0020] The wafer 11 is, for example, a semiconductor wafer on which circuits such as wirings, capacitors, diodes, and transistors are formed on the surface. The material of the wafer is not particularly limited, and examples thereof include silicon wafers, silicon carbide wafers, compound semiconductor wafers, glass wafers, and sapphire wafers.

[0021] The size of the wafer 11 is not particularly limited, but from the viewpoint of enhancing batch processing efficiency, it is usually 8 inches (diameter 200 mm) or more, preferably 12 inches (diameter 300 mm) or more. Note that the shape of the wafer is not limited to circular, and may be, for example, a rectangular shape such as a square or a rectangle. In the case of a rectangular wafer, from the viewpoint of enhancing batch processing efficiency, the length of the longest side of the wafer 11 is preferably equal to or greater than the above size (diameter).

[0022] The thickness of the wafer 11 is not particularly limited, but from the viewpoint of easily suppressing warping due to shrinkage when curing the first curable resin (x1), and from the viewpoint of reducing the grinding amount of the back surface 11b of the wafer 11 in a subsequent process and shortening the time required for back surface grinding, it is preferably 100 μm to 1,000 μm, more preferably 200 μm to 900 μm, and still more preferably 300 μm to 800 μm.

[0023] On the bump formation surface 11a of the semiconductor chip manufacturing wafer 10 prepared in step (S1), a plurality of groove portions 13 are formed in a lattice pattern as division planned lines when the semiconductor chip manufacturing wafer 10 is singulated. The plurality of groove portions 13 are cut grooves formed when applying the blade tip dicing method (Dicing Before Grinding), and are formed with a depth shallower than the thickness of the wafer 11 so that the deepest part of the groove portion 13 does not reach the back surface 11b of the wafer 11. The plurality of groove portions 13 can be formed by dicing using a conventionally known wafer dicing apparatus equipped with a dicing blade or the like. Note that the plurality of groove portions 13 can also be formed by dicing using a laser or the like instead of a blade. Note that the plurality of groove portions 13 may be formed so that the semiconductor chip to be manufactured has a desired size and shape, and the groove portions 13 do not necessarily have to be formed in a lattice shape as shown in FIG. 2. Further, the size of the semiconductor chip is usually about 0.5 mm × 0.5 mm to 1.0 mm × 1.0 mm, but is not limited to this size.

[0024] From the viewpoint of improving the embedding property of the first curable resin (x1), the width of the groove portion 13 is preferably 10 μm to 2,000 μm, more preferably 50 μm to 1,000 μm, still more preferably 100 μm to 500 μm, and even more preferably 100 μm to 300 μm.

[0025] The depth of the groove portion 13 is adjusted according to the thickness of the wafer to be used and the required chip thickness, and is preferably 30 μm to 700 μm, more preferably 60 μm to 600 μm, and still more preferably 100 μm to 500 μm.

[0026] The semiconductor chip manufacturing wafer 10 prepared in step (S1) is subjected to step (S2).

[0027] [Step (S2)] An outline of step (S2) is shown in FIG. 4. In step (S2), the first curable resin (x1) is pressed and attached to the bump formation surface 11a of the semiconductor chip manufacturing wafer 10. Here, from the viewpoint of the handleability of the first curable resin (x1), the first curable resin (x1) is preferably used by being laminated on the first support sheet (Y1). Therefore, in step (S2), it is preferable to press and attach a first laminate (α1) having a laminated structure in which the first support sheet (Y1) and the layer (X1) of the first curable resin (x1) are laminated on the bump formation surface 11a of the semiconductor chip manufacturing wafer 10 with the layer (X1) as the attachment surface. By step (S2), as shown in FIG. 4, the bump formation surface 11a of the semiconductor chip manufacturing wafer 10 is coated with the first curable resin (x1), and the first curable resin (x1) is embedded in the groove portion 13 formed in the semiconductor chip manufacturing wafer 10.

[0028] By embedding the first curable resin (x1) in the groove 13 formed in the wafer 10 for semiconductor chip fabrication, when the wafer 10 for semiconductor chip fabrication is singulated in step (S4), the portion that becomes the side surface of the semiconductor chip can be coated with the first curable resin (x1). That is, while making the strength of the semiconductor chip excellent, a coating that becomes the precursor of the first cured resin film (r1) that coats the side surface of the semiconductor chip, which is necessary to suppress peeling of the first cured resin film (r1) as a protective film, can be formed in step (S2).

[0029] Note that the pressing force when attaching the first laminate (α1) to the wafer 10 for semiconductor chip fabrication is preferably 1 kPa to 200 kPa, more preferably 5 kPa to 150 kPa, and still more preferably 10 kPa to 100 kPa from the viewpoint of making the embedding property of the first curable resin (x1) into the groove 13 good. Note that the pressing force when attaching the first laminate (α1) to the wafer 10 for semiconductor chip fabrication may be appropriately varied from the initial stage to the final stage of attachment. For example, from the viewpoint of making the embedding property of the first curable resin (x1) into the groove 13 better, it is preferable to lower the pressing force at the initial stage of attachment and gradually increase the pressing force.

[0030] Also, when attaching the first laminate (α1) to the wafer 10 for semiconductor chip fabrication, when the first curable resin (x1) is a thermosetting resin, it is preferable to perform heating from the viewpoint of making the embedding property of the first curable resin (x1) into the groove 13 better. When the first curable resin (x1) is a thermosetting resin, the first curable resin (x1) temporarily increases in fluidity by heating and cures by continuing heating. Therefore, by heating within the range where the fluidity of the first curable resin (x1) is improved, the first curable resin (x1) can easily spread throughout the groove 13, and the embedding property of the first curable resin (x1) into the groove 13 can be further improved. The specific heating temperature (attachment temperature) is preferably 50°C to 150°C, more preferably 60°C to 130°C, and still more preferably 70°C to 110°C. Note that the heat treatment performed on the first curable resin (x1) is not included in the curing treatment of the first curable resin (x1).

[0031] Furthermore, when attaching the first laminate (α1) to the semiconductor chip manufacturing wafer 10, it is preferably performed in a reduced-pressure environment. Thereby, the groove portion 13 becomes a negative pressure, and the first curable resin (x1) easily spreads over the entire groove portion 13. As a result, the embedding property of the first curable resin (x1) into the groove portion 13 becomes better. The specific pressure of the reduced-pressure environment is preferably 0.001 kPa to 50 kPa, more preferably 0.01 kPa to 5 kPa, still more preferably 0.05 kPa to 1 kPa.

[0032] Also, from the viewpoint of further improving the embedding property of the first curable resin (x1) into the groove portion 13, the thickness of the layer (X1) of the first curable resin (x1) in the first laminate (α1) is preferably 10 μm or more, more preferably 20 μm or more, still more preferably 30 μm or more, even more preferably more than 30 μm. Also, it is preferably 200 μm or less, more preferably 150 μm or less, still more preferably 130 μm or less, even more preferably 100 μm or less, and even more preferably 80 μm or less. Here, the "thickness of the layer (X1) of the first curable resin (x1)" means the thickness of the entire layer (X1). For example, the thickness of a layer (X1) composed of a plurality of layers means the total thickness of all the layers constituting the layer (X1).

[0033] Furthermore, from the viewpoint of further improving the embedding property of the first curable resin (x1) into the groove portion 13, when performing a strain dispersion measurement of measuring the shear elastic modulus G' of the test piece of the layer (X1) by generating a 400% strain in the test piece of the layer (X1) under the conditions of a temperature of 90°C and a frequency of 1 Hz, the shear elastic modulus G' is preferably 5.0×10 Pa to 1.0×10 6 Pa, more preferably 1.0×10 2 Pa to 1.0×10 5 Pa, still more preferably 1.0×10 2 Pa to 1.0×104 It is Pa. Note that the shear modulus of elasticity G' of the layer (X1) of the first curable resin (x1) is a value measured before curing the first curable resin (x1). Note that the shear modulus of elasticity G' can be adjusted by adjusting the composition etc. of the first curable resin (x1).

[0034] Here, the first support sheet (Y1) of the first laminate (α1) preferably supports the first curable resin (x1) and also has a function as a back grind sheet. In this case, when grinding the back surface 11b of the wafer 11 with the first laminate (α1) attached, the first support sheet (Y1) functions as a back grind sheet, and the back grind process can be easily carried out.

[0035] [Step (S3), Step (S4), and Step (S - BG)] By the steps up to the above step (S2), a laminate in which the first laminate (α1) is attached and laminated to the wafer 10 for manufacturing a semiconductor chip is formed. The laminate is preferably subjected to the steps according to any one of the first to fourth embodiments described below according to the timing of the implementation of step (S - BG). Hereinafter, steps (S3) and (S4) will be described while including an explanation regarding the timing of implementing step (S - BG) for the first to fourth embodiments.

[0036] [First Embodiment] In the first embodiment, as shown in FIG. 1, step (S - BG) is performed after step (S2) and before step (S3). FIG. 5 shows a schematic diagram regarding the first embodiment.

[0037] [First Embodiment: Step (S - BG)] In the first embodiment, first, step (S-BG) is carried out. Specifically, as shown in (1-a) of FIG. 5, the back surface 11b of the wafer 10 for semiconductor chip fabrication with the first laminate (α1) attached is ground. "BG" in FIG. 5 means back grind, and the same applies to the following drawings. Next, as shown in (1-b) of FIG. 5, the first support sheet (Y1) is peeled off from the first laminate (α1). The grinding amount when grinding the back surface 11b of the wafer 10 for semiconductor chip fabrication may be at least an amount such that the bottom of the groove 13 of the wafer 10 for semiconductor chip fabrication is exposed. However, further grinding may be performed to grind the first curable resin (x1) embedded in the groove 13 together with the wafer 10 for semiconductor chip fabrication. In the first embodiment, since the first support sheet (Y1) is peeled off before step (S3) is carried out, even when the first curable resin (x1) is a thermosetting resin and a heat treatment for curing is carried out in step (S3), heat resistance is not required for the first support sheet (Y1). Therefore, the degree of freedom in the design of the first support sheet (Y1) is improved.

[0038] (First embodiment: Step (S3)) After step (S-BG) is carried out, step (S3) is carried out. Specifically, as shown in (1-c) of FIG. 5, the first curable resin (x1) is cured to obtain a wafer 10 for semiconductor chip fabrication with a first cured resin film (r1). The first cured resin film (r1) formed by curing the first curable resin (x1) becomes stronger than the first curable resin (x1) at room temperature. Therefore, by forming the first cured resin film (r1), the bump neck is well protected. Also, in step (S4) shown in (1-d) of FIG. 5, by singulating the wafer 10 for semiconductor chip fabrication with the first cured resin film (r1), a semiconductor chip whose side surfaces are also covered with the first cured resin film (r1) can be obtained, and a semiconductor chip with excellent strength can be obtained. Moreover, peeling of the first cured resin film (r1) as a protective film is also suppressed.

[0039] (First embodiment: Curing method) The curing of the first curable resin (x1) can be carried out either by heat curing or by curing with irradiation of energy rays, depending on the type of curable component contained in the first curable resin (x1). In the present specification, the "energy ray" means one having energy quanta among electromagnetic waves or charged particle beams, and examples thereof include ultraviolet rays, electron beams, etc., and preferably ultraviolet rays. As conditions for heat curing, the curing temperature is preferably 90°C to 200°C, and the curing time is preferably 1 hour to 3 hours. As conditions for curing by energy ray irradiation, they are appropriately set according to the type of energy ray used. For example, when using ultraviolet rays, the illuminance is preferably 170 mw / cm 2 ~250 mw / cm 2 and the light quantity is preferably 300 mJ / cm 2 ~3,000 mJ / cm 2 is. Here, in the process of curing the first curable resin (x1) to form the first cured resin film (r1), from the viewpoint of removing bubbles or the like that may enter when embedding the groove portion 13 with the first curable resin (x1) in step (S2), the first curable resin (x1) is preferably a thermosetting resin. That is, when the first curable resin (x1) is a thermosetting resin, the first curable resin (x1) temporarily increases its fluidity by heating and cures by continuing to heat. By utilizing this phenomenon, when the fluidity of the first curable resin (x1) increases, bubbles or the like that may enter when embedding the groove portion 13 with the first curable resin (x1) are removed, and after making the embedding property of the first curable resin (x1) into the groove portion 13 in a better state, the first curable resin (x1) can be cured. Also, from the viewpoint of shortening the curing time, the first curable resin (x1) is preferably an energy ray curable resin. Details of the first curable resin (x1) for forming the first cured resin film (r1) will be described later.

[0040] (First Embodiment: Step (S4)) After performing step (S3), step (S4) is performed. Specifically, as shown in (1-d) of FIG. 5, the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion is cut along the planned division line. The cutting can be appropriately performed by adopting a conventionally known method such as blade dicing or laser dicing. Thereby, a semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), it has excellent strength. Further, since the bump formation surface 11a and the side surface are continuously covered without interruption by the first cured resin film (r1), the joint surface (interface) between the bump formation surface 11a and the first cured resin film (r1) is not exposed on the side surface of the semiconductor chip 40. Among the joint surfaces (interfaces) between the bump formation surface 11a and the first cured resin film (r1), the exposed portion exposed on the side surface of the semiconductor chip 40 is likely to be a starting point of film peeling. Since the semiconductor chip 40 of the present invention does not have such an exposed portion, film peeling from the exposed portion is less likely to occur during the process of cutting the wafer 10 for manufacturing a semiconductor chip to manufacture the semiconductor chip 40 or after manufacturing. Therefore, a semiconductor chip 40 in which peeling of the first cured resin film (r1) as a protective film is suppressed can be obtained.

[0041] In step (S4), when cutting the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) formed in the groove portion along the planned division line, it is preferable that the first cured resin film (r1) is transparent. Since the first cured resin film (r1) is transparent, the semiconductor wafer 11 can be seen through, so that the visibility of the planned division line is ensured. Therefore, it becomes easier to cut along the planned division line.

[0042] <Second Embodiment> In the second embodiment, as shown in FIG. 1, after step (S3) and before step (S4), step (S-BG) is performed. Fig. 6 shows a schematic diagram regarding the second embodiment.

[0043] (Second Embodiment: Step (S3)) In the second embodiment, first, step (S3) is carried out. Specifically, as shown in (2-a) of Fig. 6, with the first laminate (α1) attached, the first curable resin (x1) is cured to obtain a wafer 10 for manufacturing a semiconductor chip with a first cured resin film (r1). The first cured resin film (r1) formed by curing the first curable resin (x1) becomes stronger than the first curable resin (x1) at normal temperature. Therefore, by forming the first cured resin film (r1), the bump neck is well protected. Also, in step (S4), by dicing the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1), a semiconductor chip whose side surfaces are also covered with the first cured resin film (r1) can be obtained, and a semiconductor chip with excellent strength can be obtained. Moreover, peeling of the first cured resin film (r1) as a protective film is also suppressed. Examples of the curing method include the same method as the curing method described in the first embodiment. By performing a heat curing treatment without peeling the first support sheet (Y1), the flow on the surface of the first curable resin (x1) that temporarily occurs when the first curable resin (x1) is cured by the first support sheet (Y1) during heat curing can be suppressed, and the flatness of the first cured resin film (r1) on the bump formation surface can be improved. Also, before grinding the back surface 11b of the wafer 10 for manufacturing a semiconductor chip, by curing the first curable resin (x1), warping of the wafer 10 for manufacturing a semiconductor chip is suppressed.

[0044] (Second Embodiment: Step (S-BG)) After carrying out step (S3), step (S-BG) is carried out. As shown in (2-b) of Fig. 6, with the first laminate (α1) attached, the back surface 11b of the wafer 10 for manufacturing a semiconductor chip is ground. In addition, when grinding the back surface 11b of the wafer 10 for manufacturing a semiconductor chip, the grinding amount only needs to be at least an amount at which the bottom of the groove 13 of the wafer 10 for manufacturing a semiconductor chip is exposed. However, further grinding may be performed so that the first cured resin film (r1) embedded in the groove 13 is also ground together with the wafer 10 for manufacturing a semiconductor chip. Next, as shown in (2-c) of FIG. 6, the first support sheet (Y1) is peeled off from the first laminate (α1).

[0045] (Second Embodiment: Step (S4)) After performing step (S-BG), step (S4) is performed in the same manner as in the first embodiment. Specifically, as shown in (2-d) of FIG. 6, the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) that is formed in the groove is cut along the planned division line. The cutting can be appropriately performed by adopting a conventionally known method such as blade dicing or laser dicing. Thereby, a semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), it has excellent strength. Also, for the reasons described above, a semiconductor chip 40 in which peeling of the first cured resin film (r1) as a protective film is suppressed can be obtained.

[0046] <Third Embodiment> In the third embodiment, as shown in FIG. 1, it is common with the second embodiment in that step (S-BG) is performed after step (S3) and before step (S4). However, it is different from the second embodiment in that a back grind sheet (b-BG) is separately used. FIG. 7 shows a schematic diagram regarding the third embodiment.

[0047] (Third Embodiment: Step (S3)) In the third embodiment, first, step (S3) is performed. Before that, as shown in (3-a) of FIG. 7, the first support sheet (Y1) is peeled off from the first laminate (α1). Then, step (S3) is carried out. Specifically, as shown in (3-b) of FIG. 7, the first curable resin (x1) is cured to obtain a semiconductor chip manufacturing wafer 10 with a first cured resin film (r1). Examples of the curing method include the same method as the curing method described in the first embodiment. Since the first support sheet (Y1) is peeled off before performing step (S3), even when the first curable resin (x1) is a thermosetting resin and a heat treatment for curing is performed in step (S3), the first support sheet (Y1) does not require heat resistance. Therefore, the degree of freedom in designing the first support sheet (Y1) is improved. Also, before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, by curing the first curable resin (x1), warping of the semiconductor chip manufacturing wafer 10 is suppressed.

[0048] (Third Embodiment: Step (S-BG)) After performing step (S3), step (S-BG) is carried out. Specifically, as shown in (3-c) of FIG. 7, a back grind sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1). Next, as shown in (3-d) of FIG. 7, after grinding the back surface 11b of the semiconductor chip manufacturing wafer 10 with the back grind sheet (b-BG) attached, as shown in (3-e) of FIG. 7, the back grind sheet (b-BG) is peeled off from the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1). Since the back grind sheet (b-BG) is not used in step (S3), even when the first curable resin (x1) is a thermosetting resin and a heat treatment for curing is performed in step (S3), the back grind sheet (b-BG) does not require heat resistance. Therefore, the degree of freedom in designing the back grind sheet (b-BG) is improved. When grinding the back surface 11b of the wafer 10 for manufacturing a semiconductor chip, the grinding amount may be at least an amount by which the bottom of the groove portion 13 of the wafer 10 for manufacturing a semiconductor chip is exposed. However, further grinding may be performed so as to grind the first cured resin film (r1) embedded in the groove portion 13 together with the wafer 10 for manufacturing a semiconductor chip.

[0049] (Third Embodiment: Step (S4)) After performing step (S-BG), step (S4) is performed in the same manner as in the first and second embodiments. Specifically, as shown in (3-f) of FIG. 7, the portion of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1) that is formed in the groove portion is cut along the planned division line. The cutting can be appropriately performed by adopting a conventionally known method such as blade dicing or laser dicing. Thereby, a semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), it has excellent strength. Further, for the reasons described above, a semiconductor chip 40 in which peeling of the first cured resin film (r1) as a protective film is suppressed can be obtained.

[0050] <Fourth Embodiment> In the fourth embodiment, as shown in FIG. 1, step (S-BG) is performed in step (S4). FIG. 8 shows a schematic diagram regarding the fourth embodiment.

[0051] (Fourth Embodiment: Step (S3)) In the fourth embodiment, first, step (S3) is performed. Before that, as shown in (4-a) of FIG. 8, the first support sheet (Y1) is peeled off from the first laminate (α1). Then, step (S3) is performed. Specifically, as shown in (4-b) of FIG. 8, the first curable resin (x1) is cured to obtain a wafer 10 for manufacturing a semiconductor chip with a first cured resin film (r1). Examples of the curing method include the same method as the curing method described in the first embodiment. Before performing step (S3), since the first support sheet (Y1) is peeled off, even when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in step (S3), heat resistance is not required for the first support sheet (Y1). Therefore, the degree of freedom in designing the first support sheet (Y1) is improved. Also, before grinding the back surface 11b of the semiconductor chip manufacturing wafer 10, by curing the first curable resin (x1), warping of the semiconductor chip manufacturing wafer 10 is suppressed.

[0052] (Fourth Embodiment: Step (S4) including Step (S-BG)) After performing step (S3), as shown in (4-c) of FIG. 8, a cut is made along the division planned line in the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) that is formed in the groove portion 13. The depth of the cut is preferably set to reach the deepest part of the groove portion 13 from the viewpoint of facilitating singulation. Thereby, in step (S-BG) described later, the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) is singulated along the cut. Alternatively, although not shown, a modified region may be formed along the division planned line in the portion of the first cured resin film (r1) of the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) that is formed in the groove portion 13. The modified region can be formed by laser or plasma treatment or the like. Thereby, in step (S-BG) described later, cracks occur starting from the modified region, and the semiconductor chip manufacturing wafer 10 with the first cured resin film (r1) is singulated along the modified region. Next, step (S-BG) is performed. Specifically, as shown in (4-d) of FIG. 8, a back grind sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1). Next, as shown in (4-e) of FIG. 8, the back surface 11b of the wafer 10 for manufacturing a semiconductor chip is ground in a state where the back grind sheet (b-BG) is attached. Finally, as shown in (4-f) of FIG. 8, the back grind sheet (b-BG) is peeled off from the wafer 10 for manufacturing a semiconductor chip with the first cured resin film (r1). Thereby, the semiconductor chip 40 in which at least the bump formation surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. Note that the grinding amount when grinding the back surface 11b of the wafer 10 for manufacturing a semiconductor chip may be at least an amount at which the bottom of the groove 13 of the wafer 10 for manufacturing a semiconductor chip is exposed, but further grinding may be performed to grind the first cured resin film (r1) embedded in the groove 13 together with the wafer 10 for manufacturing a semiconductor chip. Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are covered with the first cured resin film (r1), it has excellent strength. Note that since the back grind sheet (b-BG) is not used in step (S3), when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in step (S3), the back grind sheet (b-BG) is not required to have heat resistance. Therefore, the degree of freedom in designing the back grind sheet (b-BG) is improved.

[0053] Here, in the first to fourth embodiments, the mode in which the first support sheet (Y1) or the back grind sheet (b-BG) is used in step (S-BG) has been described. However, in one aspect of the present invention, instead of the first support sheet (Y1) or the back grind sheet (b-BG), a resin layer (Z1) for back grinding may be formed. Specifically, after covering the surface of the first cured resin film (r1) with a flowable resin (z1) and also covering the bumps exposed from the first cured resin film (r1), the resin (z1) is cured to form a resin layer (Z1) for back grinding, whereby a grinding process can be performed as a substitute for the back grinding sheet. When covering the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1) with the resin (z1), by covering through a flexible resin film (z2) capable of following the unevenness of the bumps, the resin layer (Z1) for back grinding that has become unnecessary after the step (S - BG) can be easily peeled off.

[0054] [Step (T)] In one aspect of the method for manufacturing a semiconductor chip of the present invention, it is further preferable to include the following step (T). · Step (T): A step of forming a second cured resin film (r2) on the back surface of the wafer for manufacturing the semiconductor chip

[0055] According to the manufacturing method according to the above - described embodiment, a semiconductor chip 40 in which at least the bump - forming surface 11a and the side surface are covered with the first cured resin film (r1) can be obtained. However, the back surface of the semiconductor chip 40 is exposed. Therefore, from the viewpoint of protecting the back surface of the semiconductor chip 40 and further improving the strength of the semiconductor chip 40, it is preferable to perform the above - described step (T).

[0056] More specifically, the above - described step (T) preferably includes the following step (T1) to the following step (T2) in this order. · Step (T1): A step of attaching a second curable resin (x2) to the back surface of the wafer for manufacturing the semiconductor chip · Step (T2): A step of curing the second curable resin (x2) to form a second cured resin film (r2) In addition, in step (T1), it is preferable to use a second laminate (α2) having a laminated structure in which a second support sheet (Y2) and a layer (X2) of a second curable resin (x2) are laminated. Specifically, step (T1) is preferably a step of attaching, to the back surface of a wafer for manufacturing a semiconductor chip, a second laminate (α2) having a laminated structure in which a second support sheet (Y2) and a layer (X2) of a second curable resin (x2) are laminated, with the layer (X2) as the attachment surface. In this case, the timing of peeling the second support sheet (Y2) from the second laminate (α2) may be between step (T1) and step (T2), or may be after step (T2).

[0057] Here, when using the second laminate (α2) in step (T1), the second support sheet (Y2) of the second laminate (α2) preferably supports the second curable resin (x2) and also has a function as a dicing sheet. In the case of the manufacturing method according to the first to third embodiments, in step (S4), since the second laminate (α2) is attached to the back surface 11b of the semiconductor wafer 10 with the first cured resin film (r1), when performing singulation by dicing, the second support sheet (Y2) functions as a dicing sheet, making it possible to easily perform dicing.

[0058] Here, when performing step (S3) after step (S - BG) as in the manufacturing method according to the first embodiment, step (T1) may be performed before performing step (S3), and then steps (S3) and (T2) may be performed simultaneously. That is, the first curable resin (x1) and the second curable resin (x2) may be cured together at the same time. Thereby, the number of curing processes can be reduced.

[0059] Specifically, in the manufacturing method according to the first to third embodiments, step (T) includes the following step (T1 - 1) and the following step (T1 - 2) in this order. · Step (T1-1): A step of attaching a second curable resin (x2) to the back surface of a wafer for manufacturing a semiconductor chip after step (S-BG) and before step (S4). · Step (T1-2): A step of curing the second curable resin (x2) to form a second cured resin film (r2) before or after step (S4). In step (S4), when cutting the portion of the first cured resin film (r1) formed in the groove of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned division line, it is preferable to cut the second curable resin (x2) or the second cured resin film (r2) together. Also, in the manufacturing method according to the fourth embodiment, step (T) includes the following step (T2-1) and the following step (T2-2) in this order. · Step (T2-1): A step of attaching a second curable resin (x2) to the back surface of a wafer for manufacturing a semiconductor chip in a state where a back grind sheet (b-BG) is attached, after step (S-BG) and after step (S4). · Step (T2-2): A step of curing the second curable resin (x2) to form a second cured resin film (r2). Furthermore, it is preferable that step (T) includes the following step (T2-3) before or after step (T2-2). · Step (T2-3): A step of dividing the second curable resin layer (x2) or the second cured resin film (r2) along a kerf.

[0060] [Step (U)] In one aspect of the manufacturing method of the semiconductor chip of the present invention, it may further include the following step (U). · Step (U): A step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) attached to a part of the top of the bump to expose the top of the bump. Examples of the exposure process for exposing the top of the bump include etching processes such as wet etching and dry etching. Here, examples of the dry etching process include plasma etching. In addition, when the top of the bump is not exposed on the surface of the protective film, the exposure process may be performed for the purpose of retracting the protective film until the top of the bump is exposed.

[0061] Regarding the timing of performing step (U), if the first cured resin film (r1) is exposed, there is no particular limitation, and it is preferably after step (S3) and before step (S4), and in a state where the first support sheet (Y1) and the back grind sheet (b-BG) are not attached.

[0062] Next, the first laminate (α1) used in the method for manufacturing a semiconductor chip according to one aspect of the present invention will be described. In addition, the back grind sheet (b-BG) and the second laminate (α2) used in the method for manufacturing a semiconductor chip according to one aspect of the present invention will also be described.

[0063] [Configuration of the first laminate (α1)] An example of the configuration of the first laminate (α1) used in the manufacturing method according to one aspect of the present invention is shown in FIG. 9. The first laminate (α1) used in the manufacturing method according to one aspect of the present invention is provided with a layer (X1) of a first curable resin (x1) on one surface of a first support sheet (Y1), like the first laminate (α1) shown in FIG. 9. By providing the layer (X1) of the first curable resin (x1) on one surface of the first support sheet (Y1), when transporting the layer (X1) of the first curable resin (x1) as a product package or transporting the layer (X1) of the first curable resin (x1) within the process, the layer (X1) of the first curable resin (x1) is stably supported and protected.

[0064] In addition, specific examples of the configuration of the first laminate (α1) are shown in FIGS. 10 to 12. The first laminate (α1) is such that, like the first laminate (α1a) shown in FIG. 10, the first support sheet (Y1) is a base material 51, and a layer (X1) of a first curable resin (x1) is provided on one surface of the base material 51. Further, as in the first laminate (α1b) shown in FIG. 11, the first support sheet (Y1) of the first laminate (α1) is an adhesive sheet formed by laminating a base material 51 and an adhesive layer 61, and the adhesive layer 61 of the adhesive sheet and the layer (X1) of the first curable resin (x1) may be bonded together. Furthermore, as in the first laminate (α1c) shown in FIG. 12, the first support sheet (Y1) of the first laminate (α1) is an adhesive sheet formed by laminating a base material 51, an intermediate layer 71, and an adhesive layer 61 in this order, and the adhesive layer 61 of the adhesive sheet and the layer (X1) of the first curable resin (x1) may be bonded together. The adhesive sheet formed by laminating the base material 51, the intermediate layer 71, and the adhesive layer 61 in this order can be suitably used as a back grind tape. That is, since the first laminate (α1c) shown in FIG. 12 has a back grind tape as the first support sheet (Y1), after bonding the layer (X1) of the first curable resin (x1) of the first laminate (α1c) to the bump formation surface of the semiconductor chip manufacturing wafer, when the back surface of the semiconductor chip manufacturing wafer is ground and thinned, it can be suitably used.

[0065] Hereinafter, the first curable resin (x1) used for the first laminate (α1) and the first support sheet (Y1) will be described.

[0066] <The first curable resin (x1)> The first curable resin (x1) is a film-shaped resin used to cover the bump formation surface of the semiconductor chip manufacturing wafer and fill the groove formed in the semiconductor chip manufacturing wafer, and forms a first cured resin film (r1) by curing by heating or energy ray irradiation. That is, the first curable resin (x1) may be a thermosetting resin film (hereinafter, also referred to as "the first thermosetting resin film (x1-1)") that cures by heating, or an energy ray curable resin film (hereinafter, also referred to as "the first energy ray curable resin film (x1-2)") that cures by energy ray irradiation.

[0067] The physical properties of the first curable resin (x1) can be adjusted by adjusting either or both of the type and amount of the components contained in the first curable resin (x1).

[0068] Hereinafter, the first thermosetting resin film (x1-1) and the first energy ray curable resin film (x1-2) will be described.

[0069] <<First thermosetting resin film (x1-1)>> The first thermosetting resin film (x1-1) contains a polymer component (A) and a thermosetting component (B). The first thermosetting resin film (x1-1) is formed, for example, from a first thermosetting resin composition (x1-1-1) containing a polymer component (A) and a thermosetting component (B). The polymer component (A) is a component that can be regarded as being formed by a polymerization reaction of a polymerizable compound. Further, the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction using heat as a trigger for the reaction. The curing (polymerization) reaction includes a polycondensation reaction. In the following description of this specification, the "content of each component in the total amount of the active ingredients of the first thermosetting resin composition (x1-1-1)" is synonymous with the "content of each component of the first thermosetting resin film (x1-1) formed from the first thermosetting resin composition (x1-1-1)".

[0070] (Polymer component (A)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain a polymer component (A). The polymer component (A) is a polymer compound for imparting film-forming properties, flexibility, etc. to the first thermosetting resin film (x1-1). The polymer component (A) may be used alone or in combination of two or more. When the polymer component (A) is used in combination of two or more, their combination and ratio can be arbitrarily selected.

[0071] Examples of the polymer component (A) include acrylic resins (resins having a (meth)acryloyl group), polyvinyl acetals, polyesters, urethane resins (resins having a urethane bond), acrylic urethane resins, silicone resins (resins having a siloxane bond), rubber resins (resins having a rubber structure), phenoxy resins, and thermosetting polyimides. Among these, acrylic resins and polyvinyl acetals are preferred.

[0072] Examples of the acrylic resin include known acrylic polymers. From the viewpoint of more easily exhibiting the effects of the present invention, the weight average molecular weight (Mw) of the acrylic resin is preferably from 10,000 to 2,000,000, more preferably from 300,000 to 1,500,000, and still more preferably from 500,000 to 1,000,000. When the weight average molecular weight of the acrylic resin is at least the above lower limit value, it is easy to improve the shape stability (aging stability during storage) of the first thermosetting resin film (x1-1). Further, when the weight average molecular weight of the acrylic resin is at most the above upper limit value, the first thermosetting resin film (x1-1) easily follows the uneven surface of the adherend, and for example, it is easy to suppress the generation of voids or the like between the adherend and the first thermosetting resin film (x1-1). Therefore, not only the covering property of the bump formation surface 11a of the semiconductor wafer 11 but also the embedding property into the groove portion 13 are easily improved.

[0073] From the viewpoint of more easily exhibiting the effects of the present invention, the glass transition temperature (Tg) of the acrylic resin is preferably from -60 to 70°C, more preferably from -40 to 50°C, and still more preferably from -30 to 30°C. When the glass transition temperature (Tg) of the acrylic resin is at or above the above lower limit value, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, and the peelability of the first support sheet (Y1) is improved. Further, when the glass transition temperature (Tg) of the acrylic resin is at or below the above upper limit value, the adhesive force between the first thermosetting resin film (x1-1) and the first cured resin film (r1) and the adherend is improved. Therefore, it is easier to further suppress the film peeling of the first cured resin film (r1) as the protective film.

[0074] Examples of the acrylic resin include polymers of one or more (meth)acrylic acid esters; copolymers of two or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, and the like.

[0075] Examples of the (meth)acrylic acid ester constituting the acrylic resin include (meth)acrylic acid methyl, (meth)acrylic acid ethyl, (meth)acrylic acid n-propyl, (meth)acrylic acid isopropyl, (meth)acrylic acid n-butyl, (meth)acrylic acid isobutyl, (meth)acrylic acid sec-butyl, (meth)acrylic acid tert-butyl, (meth)acrylic acid pentyl, (meth)acrylic acid hexyl, (meth)acrylic acid heptyl, (meth)acrylic acid 2-ethylhexyl, (meth)acrylic acid isooctyl, (meth)acrylic acid n-octyl, (meth)acrylic acid n-nonyl, (meth)acrylic acid isononyl, (meth)acrylic acid decyl, (meth)acrylic acid undecyl, (meth)acrylic acid dodecyl ((meth)acrylic acid lauryl), (meth)acrylic acid tridecyl, (meth)acrylic acid tetradecyl ((meth)acrylic acid myristyl), (meth)acrylic acid pentadecyl, (meth)acrylic acid hexadecyl ((meth)acrylic acid palmityl), (meth)acrylic acid heptadecyl, and (meth)acrylic acid octadecyl ((meth)acrylic acid stearyl), etc., (meth)acrylic acid alkyl esters in which the alkyl group constituting the alkyl ester has a chain structure with 1 to 18 carbon atoms; (Meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; (Meth)acrylic acid aralkyl esters such as benzyl (meth)acrylate; (Meth)acrylic acid cycloalkenyl esters such as dicyclopentenyl (meth)acrylate; (Meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyl oxyethyl (meth)acrylate; (Meth)acrylic acid imide; Glycidyl group-containing (meth)acrylic acid esters such as glycidyl (meth)acrylate; Hydroxyl group-containing (meth)acrylic acid esters such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; Examples thereof include substituted amino group-containing (meth)acrylic acid esters such as N-methylaminoethyl (meth)acrylate. In the present specification, the "substituted amino group" means a group in which one or two hydrogen atoms of the amino group are substituted with a group other than a hydrogen atom. Among these, from the viewpoint of more easily exhibiting the effects of the present invention, a copolymer obtained by combining a (meth)acrylic acid alkyl ester in which the alkyl group constituting the alkyl ester has a chain structure having 1 to 18 carbon atoms, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester is preferable, a copolymer obtained by combining a (meth)acrylic acid alkyl ester in which the alkyl group constituting the alkyl ester has a chain structure having 1 to 4 carbon atoms, a glycidyl group-containing (meth)acrylic acid ester, and a hydroxyl group-containing (meth)acrylic acid ester is more preferable, and a copolymer obtained by combining butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate is even more preferable.

[0076] The acrylic resin may be formed by copolymerizing, for example, in addition to (meth)acrylate esters, one or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, and the like.

[0077] The monomers constituting the acrylic resin may be a single type or two or more types. When there are two or more monomers constituting the acrylic resin, their combinations and ratios can be arbitrarily selected.

[0078] The acrylic resin may have a functional group capable of bonding to other compounds such as a vinyl group, (meth)acryloyl group, amino group, hydroxyl group, carboxyl group, and isocyanate group. The functional group of the acrylic resin may be bonded to other compounds via a crosslinking agent (F) described later, or may be directly bonded to other compounds without using the crosslinking agent (F). When the acrylic resin is bonded to other compounds through the functional group, the reliability of the package obtained using the first thermosetting resin film (x1-1) tends to improve.

[0079] Examples of the polyvinyl acetal in the polymer component (A) include known ones. Among them, preferred polyvinyl acetals include, for example, polyvinyl formal, polyvinyl butyral, etc., and polyvinyl butyral is more preferred. Examples of polyvinyl butyral include those having structural units represented by the following formulas (i)-1, (i)-2, and (i)-3.

[0080]

Chemical formula

[0081] The weight average molecular weight (Mw) of the polyvinyl acetal is preferably from 5,000 to 200,000, more preferably from 8,000 to 100,000. When the weight average molecular weight of the polyvinyl acetal is at least the above lower limit value, it is easy to improve the shape stability (aging stability during storage) of the first thermosetting resin film (x1-1). Further, when the weight average molecular weight of the polyvinyl acetal is at most the above upper limit value, the first thermosetting resin film (x1-1) easily follows the uneven surface of the adherend, and for example, it is easy to suppress the generation of voids or the like between the adherend and the first thermosetting resin film (x1-1). Therefore, not only the coatability of the bump formation surface 11a of the semiconductor wafer 11 but also the embeddability into the groove portion 13 are easily improved.

[0082] The glass transition temperature (Tg) of the polyvinyl acetal is preferably from 40 to 80°C, more preferably from 50 to 70°C. When the Tg of the polyvinyl acetal is at least the above lower limit value, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, and the peelability of the first support sheet (Y1) is improved. Further, when the Tg of the polyvinyl acetal is at most the above upper limit value, the adhesive force between the first thermosetting resin film (x1-1) and the first cured resin film (r1) and the adherend is improved. Therefore, it is easier to further suppress the film peeling of the first cured resin film (r1) as the protective film.

[0083] The ratio of three or more kinds of monomers constituting the polyvinyl acetal can be arbitrarily selected.

[0084] Here, in one aspect of the present invention, as the polymer component (A), a thermoplastic resin other than an acrylic resin and polyvinyl acetal (hereinafter, may be simply abbreviated as "thermoplastic resin") may be used alone without using both the acrylic resin and polyvinyl acetal, or may be used in combination with one or both of the acrylic resin and polyvinyl acetal. By using a thermoplastic resin, the peelability of the first cured resin film (r1) from the first support sheet (Y1) can be improved, the first thermosetting resin film (x1-1) can more easily follow the uneven surface of the adherend, and the generation of voids and the like between the adherend and the first thermosetting resin film (x1-1) can be more suppressed. Therefore, not only the covering property of the bump formation surface 11a of the semiconductor wafer 11 but also the embedability into the groove portion 13 can be easily improved.

[0085] The weight average molecular weight of the thermoplastic resin is preferably from 1,000 to 100,000, and more preferably from 3,000 to 80,000.

[0086] The glass transition temperature (Tg) of the thermoplastic resin is preferably from -30 to 150°C, and more preferably from -20 to 120°C.

[0087] Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

[0088] The thermoplastic resin may be used alone or in combination of two or more. When there are two or more thermoplastic resins, their combination and ratio can be arbitrarily selected.

[0089] The content of the polymer component (A) is preferably 5 to 85% by mass, and more preferably 5 to 80% by mass, based on the total amount of the active ingredients of the first thermosetting resin composition (x1-1-1).

[0090] The polymer component (A) may also correspond to the thermosetting component (B). In the present invention, when the first thermosetting resin composition (x1-1-1) contains a component that corresponds to both the polymer component (A) and the thermosetting component (B), the first thermosetting resin composition (x1-1-1) is regarded as containing both the polymer component (A) and the thermosetting component (B).

[0091] (Thermosetting component (B)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain a thermosetting component (B). The thermosetting component (B) is a component for curing the first thermosetting resin film (x1-1) to form a hard first cured resin film (r1). The thermosetting component (B) may be used alone or in combination of two or more. When there are two or more thermosetting components (B), their combinations and ratios can be arbitrarily selected.

[0092] Examples of the thermosetting component (B) include epoxy-based thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins. Among these, epoxy-based thermosetting resins are preferred.

[0093] The epoxy-based thermosetting resin consists of an epoxy resin (B1) and a curing agent (B2). The epoxy-based thermosetting resin may be used alone or in combination of two or more. When there are two or more epoxy-based thermosetting resins, their combinations and ratios can be arbitrarily selected.

[0094] · Epoxy resin (B1) Examples of the epoxy resin (B1) include known ones, such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolak epoxy resin, dicyclopentadiene type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, etc., and epoxy compounds with two or more functional groups. Among these, from the viewpoint of more easily exhibiting the effects of the present invention, it is preferable to use polyfunctional epoxy resins, dicyclopentadiene type epoxy resins, and bisphenol F type epoxy resins. Among the polyfunctional epoxy resins, polyfunctional aromatic type epoxy resins are preferred.

[0095] As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group may be used. The epoxy resin having an unsaturated hydrocarbon group has higher compatibility with the acrylic resin than the epoxy resin having no unsaturated hydrocarbon group. Therefore, by using the epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using the first thermosetting resin film (x1-1) is improved.

[0096] Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a part of the epoxy groups of a polyfunctional epoxy resin is converted into a group having an unsaturated hydrocarbon group. Such compounds can be obtained, for example, by subjecting an epoxy group to an addition reaction with (meth)acrylic acid or a derivative thereof. Further, examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin. The unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include an ethenyl group (vinyl group), a 2-propenyl group (allyl group), a (meth)acryloyl group, and a (meth)acrylamide group. Among these, an acryloyl group is preferable.

[0097] The number average molecular weight of the epoxy resin (B1) is not particularly limited, but from the viewpoints of the curability of the first thermosetting resin film (x1-1) and the strength and heat resistance of the first cured resin film (r1) after curing, it is preferably 300 to 30,000, more preferably 400 to 10,000, and still more preferably 500 to 3,000. The epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1,000 g / eq, and more preferably 300 to 800 g / eq.

[0098] The epoxy resin (B1) may be used alone or in combination of two or more. When two or more epoxy resins (B1) are used in combination, their combination and ratio can be arbitrarily selected.

[0099] ·Thermosetting agent (B2) The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1). Examples of the thermosetting agent (B2) include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and a group in which an acid group is anhydrified, etc. It is preferably a phenolic hydroxyl group, an amino group, or a group in which an acid group is anhydrified, and more preferably a phenolic hydroxyl group or an amino group.

[0100] Among the thermosetting agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenol, novolak-type phenolic resins, dicyclopentadiene-based phenolic resins, and aralkylphenol resins, etc. Among the thermosetting agents (B2), examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter, may be abbreviated as "DICY"), etc. Among these, from the viewpoint of more easily exhibiting the effects of the present invention, a phenolic curing agent having a phenolic hydroxyl group is preferable, and a novolak-type phenolic resin is more preferable.

[0101] The thermosetting agent (B2) may have an unsaturated hydrocarbon group. Examples of the thermosetting agent (B2) having an unsaturated hydrocarbon group include compounds in which a part of the hydroxyl groups of a phenolic resin is substituted with a group having an unsaturated hydrocarbon group, or compounds in which a group having an unsaturated hydrocarbon group is directly bonded to the aromatic ring of a phenolic resin, etc. The unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having an unsaturated hydrocarbon group described above.

[0102] When a phenolic curing agent is used as the thermosetting agent (B2), from the viewpoint of easily improving the peelability of the first cured resin film (r1) from the first support sheet (Y1), it is preferable that the thermosetting agent (B2) has a high softening point or glass transition temperature.

[0103] Among the thermosetting agent (B2), for example, the number average molecular weight of resin components such as polyfunctional phenol resin, novolak type phenol resin, dicyclopentadiene-based phenol resin, and aralkyl phenol resin is preferably 300 to 30,000, more preferably 400 to 10,000, and even more preferably 500 to 3,000. Among the thermosetting agent (B2), for example, the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably, for example, 60 to 500.

[0104] The thermosetting agent (B2) may be used alone or in combination of two or more. When there are two or more thermosetting agents (B2), their combination and ratio can be arbitrarily selected.

[0105] In the first thermosetting resin composition (x1-1-1), the content of the thermosetting agent (B2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, based on 100 parts by mass of the content of the epoxy resin (B1). When the content of the thermosetting agent (B2) is at least the above lower limit value, the curing of the first thermosetting resin film (x1-1) is more likely to proceed. Also, when the content of the thermosetting agent (B2) is at most the above upper limit value, the moisture absorption rate of the first thermosetting resin film (x1-1) is reduced, and the reliability of the package obtained using the first thermosetting resin film (x1-1) is further improved.

[0106] In the first thermosetting resin composition (x1-1-1), the content of the thermosetting component (B) (total content of the epoxy resin (B1) and the thermosetting agent (B2)) is preferably 50 to 1000 parts by mass, more preferably 100 to 900 parts by mass, and even more preferably 150 to 800 parts by mass, based on 100 parts by mass of the content of the polymer component (A). When the content of the thermosetting component (B) is within such a range, the adhesive force between the first cured resin film (r1) and the first support sheet (Y1) is suppressed, and the peelability of the first support sheet (Y1) is improved.

[0107] (Curing accelerator (C)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a curing accelerator (C). The curing accelerator (C) is a component for adjusting the curing rate of the first thermosetting resin composition (x1-1-1). Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; imidazoles such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (imidazole in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphine in which one or more hydrogen atoms are substituted with organic groups); and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Among these, from the viewpoint of more easily exhibiting the effects of the present invention, imidazoles are preferred, and 2-phenyl-4,5-dihydroxymethylimidazole is more preferred.

[0108] The curing accelerator (C) may be used alone or in combination of two or more. When there are two or more curing accelerators (C), their combinations and ratios can be arbitrarily selected.

[0109] In the first thermosetting resin composition (x1-1-1), when a curing accelerator (C) is used, the content of the curing accelerator (C) is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, based on 100 parts by mass of the content of the thermosetting component (B). When the content of the curing accelerator (C) is at least the above lower limit value, the effect of using the curing accelerator (C) can be more easily obtained significantly. Further, when the content of the curing accelerator (C) is at most the above upper limit value, for example, the effect of suppressing the migration and segregation of a highly polar curing accelerator (C) to the adhesion interface side with the adherend in the first thermosetting resin film (x1-1) under high temperature and high humidity conditions is enhanced, and the reliability of the package obtained using the first thermosetting resin film (x1-1) is further improved.

[0110] (Filler (D)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a filler (D). By containing the filler (D), it becomes easier to adjust the thermal expansion coefficient of the first cured resin film (r1) obtained by curing the first thermosetting resin film (x1-1) to an appropriate range, and the reliability of the package obtained using the first thermosetting resin film (x1-1) is further improved. Further, by the first thermosetting resin film (x1-1) containing the filler (D), the moisture absorption rate of the first cured resin film (r1) can be reduced, or the heat dissipation property can be improved.

[0111] The filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler. Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride; beads obtained by spheroidizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers and the like. Among these, from the viewpoint of more easily exerting the effects of the present invention, the inorganic filler is preferably silica or alumina.

[0112] The filler (D) may be used alone or in combination of two or more kinds. When there are two or more kinds of the filler (D), their combination and ratio can be arbitrarily selected.

[0113] When using the filler (D), the content of the filler (D) is preferably 5 to 80% by mass, more preferably 7 to 60% by mass, based on the total amount of the active ingredients of the first thermosetting resin composition (x1-1-1). When the content of the filler (D) is within such a range, the adjustment of the above thermal expansion coefficient becomes easier.

[0114] The average particle diameter of the filler (D) is preferably 5 nm to 1000 nm, more preferably 5 nm to 500 nm, and still more preferably 10 nm to 300 nm. The above average particle diameter is obtained by measuring the outer diameter of one particle at several places and calculating the average value.

[0115] (Coupling agent (E)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a coupling agent (E). By using a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound, it is easy to improve the adhesiveness and the adhesion of the first thermosetting resin film (x1-1) and the first cured resin film (r1) to the adherend. Therefore, it is easier to suppress the film peeling of the first cured resin film (r1) as the protective film. Further, by using the coupling agent (E), the first cured resin film (r1) obtained by curing the first thermosetting resin film (x1-1) is less likely to impair the heat resistance and is likely to improve the water resistance.

[0116] The coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional groups possessed by the polymer component (A), the thermosetting component (B), etc., and more preferably a silane coupling agent. Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silane, etc.

[0117] The coupling agent (E) may be used alone or in combination of two or more. When there are two or more coupling agents (E), their combination and ratio can be arbitrarily selected.

[0118] In the first thermosetting resin composition (x1-1-1), when using the coupling agent (E), the content of the coupling agent (E) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and still more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the total content of the polymer component (A) and the thermosetting component (B). When the content of the coupling agent (E) is at least the above lower limit value, effects due to using the coupling agent (E), such as improvement in the dispersibility of the filler (D) in the resin and improvement in the adhesiveness of the first thermosetting resin film (x1-1) to the adherend, can be obtained more significantly. Also, when the content of the coupling agent (E) is at most the above upper limit value, generation of outgas is more suppressed.

[0119] (Crosslinking agent (F)) When using, as the polymer component (A), those having functional groups such as vinyl groups, (meth)acryloyl groups, amino groups, hydroxyl groups, carboxyl groups, or isocyanate groups that can bind to other compounds, such as the above-mentioned acrylic resins, the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a crosslinking agent (F) for bonding and crosslinking the functional groups with other compounds. By crosslinking using the crosslinking agent (F), the initial adhesive strength and cohesive strength of the first thermosetting resin film (x1-1) can be adjusted.

[0120] Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group).

[0121] Examples of the organic polyvalent isocyanate compound include, for example, aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, and alicyclic polyvalent isocyanate compounds (hereinafter, these compounds may be collectively abbreviated as "aromatic polyvalent isocyanate compounds, etc."); trimers, isocyanurate bodies, and adduct bodies of the aromatic polyvalent isocyanate compounds, etc.; terminal isocyanate urethane prepolymers obtained by reacting the aromatic polyvalent isocyanate compounds, etc. with polyol compounds, and the like. The "adduct body" means a reaction product of the aromatic polyvalent isocyanate compound, aliphatic polyvalent isocyanate compound, or alicyclic polyvalent isocyanate compound with a low-molecular active hydrogen-containing compound such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil, and examples thereof include xylylene diisocyanate adducts of trimethylolpropane, and the like.

[0122] More specifically, examples of the organic polyvalent isocyanate compound include, for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; compounds in which any one or more of tolylene diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are added to all or some of the hydroxyl groups of polyols such as trimethylolpropane; lysine diisocyanate, and the like.

[0123] Examples of the organic polyvalent imine compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, tetramethylolmethane-tri-β-aziridinylpropionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide) triethylenemelamine.

[0124] When an organic polyvalent isocyanate compound is used as the crosslinking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A). When the crosslinking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, a crosslinked structure can be easily introduced into the first thermosetting resin film (x1-1) by the reaction between the crosslinking agent (F) and the polymer component (A).

[0125] The crosslinking agent (F) may be used alone or in combination of two or more. When there are two or more crosslinking agents (F), their combinations and ratios can be arbitrarily selected.

[0126] In the first thermosetting resin composition (x1-1-1), when the crosslinking agent (F) is used, the content of the crosslinking agent (F) is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and still more preferably 0.5 to 5 parts by mass with respect to 100 parts by mass of the content of the polymer component (A). When the content of the crosslinking agent (F) is at least the lower limit value, the effect of using the crosslinking agent (F) can be obtained more significantly. Also, when the content of the crosslinking agent (F) is at most the upper limit value, excessive use of the crosslinking agent (F) is suppressed.

[0127] (Energy ray curable resin (G)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain an energy ray curable resin (G). Since the first thermosetting resin film (x1-1) contains the energy ray curable resin (G), its properties can be changed by irradiation with energy rays.

[0128] The energy ray curable resin (G) is obtained by polymerizing (curing) an energy ray curable compound. Examples of the energy ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

[0129] Examples of the acrylate compound include chain aliphatic skeleton-containing (meth)acrylates such as trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, and 1,6-hexanediol di(meth)acrylate; cyclic aliphatic skeleton-containing (meth)acrylates such as dicyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylate; urethane (meth)acrylate oligomer; epoxy-modified (meth)acrylate; polyether (meth)acrylate other than the above polyalkylene glycol (meth)acrylate; and itaconic acid oligomer.

[0130] The weight average molecular weight of the energy ray curable compound is preferably 100 to 30,000, and more preferably 300 to 10,000.

[0131] The energy ray curable compound used for polymerization may be used alone or in combination of two or more. When two or more energy ray curable compounds are used for polymerization, their combinations and ratios can be arbitrarily selected.

[0132] When using the energy ray-curable resin (G), the content of the energy ray-curable resin (G) is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and still more preferably 10 to 85% by mass based on the total amount of the active ingredients of the first thermosetting resin composition (x1-1-1).

[0133] (Photoinitiator (H)) When the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain the energy ray-curable resin (G), in order to efficiently advance the polymerization reaction of the energy ray-curable resin (G), the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a photoinitiator (H).

[0134] Examples of the photoinitiator (H) include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoate, benzoin benzoate methyl, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyl diphenylphosphine oxide, and 2-chloroanthraquinone, etc.

[0135] The first photoinitiator (H) may be used alone or in combination of two or more. When there are two or more photoinitiators (H), their combinations and ratios can be arbitrarily selected.

[0136] In the first thermosetting resin composition (x1-1-1), the content of the photopolymerization initiator (H) is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and still more preferably 2 to 5 parts by mass with respect to 100 parts by mass of the energy ray curable resin (G).

[0137] (General-purpose additive (I)) The first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) may contain a general-purpose additive (I) within a range that does not impair the effects of the present invention. The general-purpose additive (I) may be a known one, can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred general-purpose additives (I) include, for example, rheology control agents, surfactants, silicone oils, plasticizers, antistatic agents, antioxidants, and gettering agents.

[0138] The general-purpose additive (I) may be used alone or in combination of two or more. When there are two or more general-purpose additives (I), their combinations and ratios can be arbitrarily selected. The content of the general-purpose additive (I) is not particularly limited and may be appropriately selected according to the purpose.

[0139] The first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) may contain other components that do not fall under any of the above polymer component (A), thermosetting component (B), curing accelerator (C), filler (D), coupling agent (E), crosslinking agent (F), energy ray curable resin (G), photopolymerization initiator (H), and additive (I) within a range that does not impair the effects of the present invention. The above-mentioned other components contained in the first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) may be only one kind or two or more kinds. When there are two or more kinds, their combinations and ratios can be arbitrarily selected. The content of the other components of the first thermosetting resin composition (x1-1-1) and the first thermosetting resin film (x1-1) is not particularly limited and may be appropriately selected according to the purpose.

[0140] (Solvent) The first thermosetting resin composition (x1-1-1) preferably further contains a solvent. The first thermosetting resin composition (x1-1-1) containing a solvent has good handleability. The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone. The solvent may be used alone or in combination of two or more. When there are two or more solvents, their combination and ratio can be arbitrarily selected. The solvent is preferably methyl ethyl ketone or the like in terms of being able to mix the components contained in the first thermosetting resin composition (x1-1-1) more uniformly.

[0141] (Preparation method of the first thermosetting resin composition (x1-1-1)) The first thermosetting resin composition (x1-1-1) is prepared by blending each component for constituting it. The addition order at the time of blending each component is not particularly limited, and two or more components may be added simultaneously. When using a solvent, the solvent may be used by mixing it with any one of the blending components other than this solvent to dilute this blending component in advance, or the solvent may be used by mixing it with these blending components without diluting any one of the blending components other than the solvent in advance. The method of mixing the respective components during compounding is not particularly limited, and a known method may be appropriately selected, such as a method of mixing by rotating a stir bar or stirring blade, etc.; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves. The temperature and time during the addition and mixing of the respective components are not particularly limited as long as the respective compounding components do not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30°C.

[0142] <First energy ray curable resin film (x1-2)> The first energy ray curable resin film (x1-2) contains an energy ray curable component (a). The first energy ray curable resin film (x1-2) is formed, for example, from a first energy ray curable resin composition (x1-2-1) containing an energy ray curable component (a). The energy ray curable component (a) is preferably uncured, preferably has adhesiveness, and more preferably is uncured and has adhesiveness. In the following description of this specification, "the content of each component based on the total amount of the active ingredients of the first energy ray curable resin composition (x1-2-1)" is synonymous with "the content of each component of the first energy ray curable resin film (x1-2) formed from the first energy ray curable resin composition (x1-2-1)".

[0143] (Energy ray curable component (a)) The energy ray curable component (a) is a component that cures upon irradiation with energy rays, and is also a component for imparting film-forming properties, flexibility, etc. to the first energy ray curable resin film (x1-2). Examples of the energy ray curable component (a) include a polymer (a1) having an energy ray curable group and a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy ray curable group and a molecular weight of 100 to 80,000. The polymer (a1) may be at least partially crosslinked by a crosslinking agent or may not be crosslinked.

[0144] (Polymer (a1)) Examples of the polymer (a1) having an energy ray curable group and a weight average molecular weight of 80,000 to 2,000,000 include an acrylic polymer (a11) having a functional group capable of reacting with a group possessed by another compound, an energy ray curable compound (a12) having a group that reacts with the functional group and an energy ray curable group such as an energy ray curable double bond, and an acrylic resin (a1-1) formed by polymerization thereof.

[0145] Examples of the functional group capable of reacting with a group possessed by another compound include a hydroxyl group, a carboxy group, an amino group, a substituted amino group (a group in which one or two hydrogen atoms of the amino group are substituted with a group other than a hydrogen atom), and an epoxy group. However, in terms of preventing corrosion of circuits such as semiconductor wafers and semiconductor chips, the functional group is preferably a group other than a carboxy group. Among these, the functional group is preferably a hydroxyl group.

[0146] ·Acrylic polymer (a11) having a functional group Examples of the acrylic polymer (a11) having a functional group include those formed by copolymerization of an acrylic monomer having a functional group and an acrylic monomer having no functional group, and those in which a monomer other than an acrylic monomer (non-acrylic monomer) is further copolymerized in addition to these monomers. The acrylic polymer (a11) may be a random copolymer or a block copolymer.

[0147] Examples of the acrylic monomer having a functional group include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.

[0148] Examples of the hydroxyl group-containing monomer include hydroxyalkyl (meth)acrylates such as hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and non-(meth)acrylic unsaturated alcohols (unsaturated alcohols having no (meth)acryloyl skeleton) such as vinyl alcohol and allyl alcohol.

[0149] Examples of the carboxyl group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth)acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids (dicarboxylic acids having an ethylenically unsaturated bond) such as fumaric acid, itaconic acid, maleic acid, and citraconic acid; anhydrides of the ethylenically unsaturated dicarboxylic acids; and carboxyalkyl esters of (meth)acrylic acid such as 2-carboxyethyl methacrylate.

[0150] The acrylic monomer having a functional group is preferably a hydroxyl group-containing monomer or a carboxyl group-containing monomer, and more preferably a hydroxyl group-containing monomer.

[0151] The acrylic monomer having a functional group constituting the acrylic polymer (a11) may be used alone or in combination of two or more. When two or more acrylic monomers having a functional group constitute the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

[0152] Examples of acrylic monomers having no functional group include alkyl esters such as methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (stearyl (meth)acrylate), in which the alkyl group constituting the alkyl ester has a chain structure with 1 to 18 carbon atoms, such as alkyl (meth)acrylates.

[0153] Examples of acrylic monomers having no functional group also include alkoxyalkyl group-containing (meth)acrylic esters such as methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, ethoxymethyl (meth)acrylate, and ethoxyethyl (meth)acrylate; (meth)acrylic esters having an aromatic group, including aryl (meth)acrylates such as phenyl (meth)acrylate; non-crosslinkable (meth)acrylamides and their derivatives; and (meth)acrylic esters having a non-crosslinkable tertiary amino group such as N,N-dimethylaminoethyl (meth)acrylate and N,N-dimethylaminopropyl (meth)acrylate.

[0154] The acrylic monomer without a functional group that constitutes the acrylic polymer (a11) may be used alone or in combination of two or more. When there are two or more acrylic monomers without a functional group that constitute the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

[0155] Examples of the non-acrylic monomer include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like.

[0156] The non-acrylic monomer that constitutes the acrylic polymer (a11) may be used alone or in combination of two or more. When there are two or more non-acrylic monomers that constitute the acrylic polymer (a11), their combination and ratio can be arbitrarily selected.

[0157] In the acrylic polymer (a11), the ratio (content) of the amount of the structural unit derived from the acrylic monomer having a functional group to the total mass of the structural units constituting it is preferably 0.1 to 50% by mass, more preferably 1 to 40% by mass, and still more preferably 3 to 30% by mass. When the ratio is within such a range, in the acrylic resin (a1-1) obtained by copolymerizing the acrylic polymer (a11) and the energy ray curable compound (a12), the content of the energy ray curable group can be easily adjusted to a preferable range in the curing degree of the first cured resin film (r1).

[0158] The acrylic polymer (a11) that constitutes the acrylic resin (a1-1) may be used alone or in combination of two or more. When there are two or more acrylic polymers (a11) that constitute the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

[0159] The content of the acrylic resin (a1-1) is preferably 1 to 60% by mass, more preferably 3 to 50% by mass, and still more preferably 5 to 40% by mass based on the total amount of the active ingredients of the first energy ray curable resin composition (x1-2-1).

[0160] · Energy ray curable compound (a12) The energy ray curable compound (a12) preferably has one or more selected from the group consisting of an isocyanate group, an epoxy group, and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11), and more preferably has an isocyanate group as the group. When the energy ray curable compound (a12) has an isocyanate group as the group, for example, this isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.

[0161] The energy ray curable compound (a12) preferably has 1 to 5 energy ray curable groups in one molecule, and more preferably has 1 to 2.

[0162] Examples of the energy ray curable compound (a12) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl)ethyl isocyanate; acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate; acryloyl monoisocyanate compounds obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and hydroxyethyl (meth)acrylate, and the like. Among these, the energy ray curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.

[0163] The energy ray curable compound (a12) that constitutes the acrylic resin (a1-1) may be used alone or in combination of two or more. When there are two or more energy ray curable compounds (a12) that constitute the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

[0164] In the acrylic resin (a1-1), the ratio of the content of the energy ray curable group derived from the energy ray curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) is preferably 20 to 120 mol%, more preferably 35 to 100 mol%, and still more preferably 50 to 100 mol%. When the ratio of the content is within such a range, the adhesive strength of the first cured resin film (r1) after curing becomes greater. Therefore, it is easier to further suppress the film peeling of the first cured resin film (r1) as the protective film. When the energy ray curable compound (a12) is a monofunctional (having 1 such group in 1 molecule) compound, the upper limit value of the ratio of the content is 100 mol%, but when the energy ray curable compound (a12) is a polyfunctional (having 2 or more such groups in 1 molecule) compound, the upper limit value of the ratio of the content may exceed 100 mol%.

[0165] The weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, and more preferably 300,000 to 1,500,000.

[0166] When at least a part of the polymer (a1) is crosslinked by a crosslinking agent, the polymer (a1) does not correspond to any of the above-described monomers described as constituting the acrylic polymer (a11), and a monomer having a group that reacts with the crosslinking agent may polymerize and be crosslinked at the group that reacts with the crosslinking agent, or may be crosslinked at the group that reacts with the functional group derived from the energy ray curable compound (a12).

[0167] The polymer (a1) may be used alone or in combination of two or more. When there are two or more polymers (a1), their combinations and ratios can be arbitrarily selected.

[0168] (Compound (a2)) Examples of the energy ray-curable group of the compound (a2) having an energy ray-curable group and a weight average molecular weight of 100 to 80,000 include groups containing an energy ray-curable double bond, and preferred examples include (meth)acryloyl group, vinyl group, and the like.

[0169] The compound (a2) is not particularly limited as long as it satisfies the above conditions, and examples include low molecular weight compounds having an energy ray-curable group, epoxy resins having an energy ray-curable group, and phenolic resins having an energy ray-curable group.

[0170] Among the compounds (a2), examples of the low molecular weight compound having an energy ray curable group include polyfunctional monomers or oligomers, etc., and acrylate compounds having a (meth)acryloyl group are preferred. Examples of the acrylate compounds include 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)phenyl]fluorene, 2,2-bis[4-((meth)acryloxypolypropoxy)phenyl]propane, tricyclodecane dimethanol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloxyethoxy)phenyl]propane, neopentyl glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 2-hydroxy-1,3-di(meth)acryloxypropane and other bifunctional (meth)acrylates;Tris(2-(meth)acryloxyethyl) isocyanurate, ε-caprolactone-modified tris-(2-(meth)acryloxyethyl) isocyanurate, ethoxylated glycerol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol poly(meth)acrylate, dipentaerythritol hexa(meth)acrylate and other polyfunctional (meth)acrylates; polyfunctional (meth)acrylate oligomers such as urethane (meth)acrylate oligomers and the like can be mentioned.

[0171] Among the compounds (a2), as the epoxy resin having an energy ray-curable group and the phenol resin having an energy ray-curable group, for example, those described in paragraph 0043 of "Japanese Patent Application Laid-Open No. 2013-194102" and the like can be used.

[0172] The compound (a2) preferably has a weight average molecular weight of 100 to 30,000, more preferably 300 to 10,000.

[0173] The compound (a2) may be used alone or in combination of two or more. When there are two or more kinds of the compound (a2), their combinations and ratios can be arbitrarily selected.

[0174] (Polymer (b) having no energy ray-curable group) When the first energy ray-curable resin composition (x1-2-1) and the first energy ray-curable resin film (x1-2) contain the compound (a2) as the energy ray-curable component (a), it is further preferable to contain a polymer (b) having no energy ray-curable group. The polymer (b) having no energy ray-curable group may be at least partially crosslinked by a crosslinking agent or may not be crosslinked.

[0175] Examples of the polymer (b) having no energy ray curable group include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, and acrylic urethane resins. Among these, the polymer (b) is preferably an acrylic polymer (hereinafter sometimes abbreviated as "acrylic polymer (b-1)").

[0176] The acrylic polymer (b-1) may be a known one. For example, it may be a homopolymer of one type of acrylic monomer or a copolymer of two or more types of acrylic monomers. Further, the acrylic polymer (b-1) may be a copolymer of one or more types of acrylic monomers and one or more types of monomers other than acrylic monomers (non-acrylic monomers).

[0177] Examples of the acrylic monomer constituting the acrylic polymer (b-1) include (meth)acrylic acid alkyl esters, (meth)acrylic acid esters having a cyclic skeleton, glycidyl group-containing (meth)acrylic acid esters, hydroxyl group-containing (meth)acrylic acid esters, and substituted amino group-containing (meth)acrylic acid esters.

[0178] Examples of the (meth)acrylic acid alkyl ester include (meth)acrylic acid alkyl esters in which the alkyl group constituting the alkyl ester has a chain structure with 1 to 18 carbon atoms, such as methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (myristyl (meth)acrylate), pentadecyl (meth)acrylate, hexadecyl (meth)acrylate (palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (stearyl (meth)acrylate).

[0179] Examples of the (meth)acrylic acid ester having a cyclic skeleton include (meth)acrylic acid cycloalkyl esters such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate; (meth)acrylic acid aralkyl esters such as benzyl (meth)acrylate; (meth)acrylic acid cycloalkenyl esters such as dicyclopentenyl (meth)acrylate; and (meth)acrylic acid cycloalkenyloxyalkyl esters such as dicyclopentenyl oxyethyl (meth)acrylate.

[0180] Examples of the glycidyl group-containing (meth)acrylic acid ester include glycidyl (meth)acrylate and the like. Examples of the hydroxyl group-containing (meth)acrylic acid ester include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate. Examples of the substituted amino group-containing (meth)acrylic acid ester include N-methylethylamino (meth)acrylate and the like.

[0181] Examples of the non-acrylic monomer constituting the acrylic polymer (b-1) include olefins such as ethylene and norbornene; vinyl acetate; styrene and the like.

[0182] Examples of the polymer (b) having no energy ray-curable group and at least partially crosslinked by a crosslinking agent include those in which the reactive functional groups in the polymer (b) have reacted with the crosslinking agent. The reactive functional group may be appropriately selected according to the type of the crosslinking agent and the like, and is not particularly limited. For example, when the crosslinking agent is a polyisocyanate compound, examples of the reactive functional group include a hydroxyl group, a carboxy group, and an amino group, etc. Among these, a hydroxyl group having high reactivity with an isocyanate group is preferable. Further, when the crosslinking agent is an epoxy compound, examples of the reactive functional group include a carboxy group, an amino group, and an amide group, etc. Among these, a carboxy group having high reactivity with an epoxy group is preferable. However, from the viewpoint of preventing corrosion of the circuits of semiconductor wafers and semiconductor chips, the reactive functional group is preferably a group other than a carboxy group.

[0183] Examples of the polymer (b) having a reactive functional group and not having an energy ray-curable group include those obtained by polymerizing at least a monomer having a reactive functional group. In the case of the acrylic polymer (b-1), as either one or both of the acrylic monomers and non-acrylic monomers listed as the monomers constituting this, those having a reactive functional group may be used. For example, examples of the polymer (b) having a hydroxyl group as a reactive functional group include those obtained by polymerizing a hydroxyl group-containing (meth)acrylate, and in addition to this, in the above-mentioned acrylic monomers or non-acrylic monomers, those obtained by polymerizing a monomer in which one or more hydrogen atoms are substituted with the reactive functional group are also included.

[0184] In the polymer (b) having a reactive functional group, the ratio (content) of the amount of the structural unit derived from the monomer having a reactive functional group to the total mass of the structural units constituting this is preferably 1 to 20% by mass, and more preferably 2 to 10% by mass. When the ratio is within such a range, in the polymer (b), the degree of crosslinking becomes a more preferable range.

[0185] The weight average molecular weight (Mw) of the polymer (b) not having an energy ray-curable group is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000, from the viewpoint that the film-forming property of the first energy ray-curable resin composition (x1-2-1) becomes better.

[0186] The polymer (b) not having an energy ray-curable group may be used alone or in combination of two or more. When there are two or more polymers (b) not having an energy ray-curable group, their combination and ratio can be arbitrarily selected.

[0187] Examples of the first energy ray-curable resin composition (x1-2-1) include those containing either one or both of the polymer (a1) and the compound (a2). When the first energy ray-curable resin composition (x1-2-1) contains the compound (a2), it is preferably further contained with a polymer (b) having no energy ray-curable group. In this case, it is also preferable to further contain the polymer (a1). Also, the first energy ray-curable resin composition (x1-2-1) may not contain the compound (a2) and may contain both the polymer (a1) and the polymer (b) having no energy ray-curable group.

[0188] When the first energy ray-curable resin composition (x1-2-1) contains the polymer (a1), the compound (a2), and the polymer (b) having no energy ray-curable group, the content of the compound (a2) is preferably 10 to 400 parts by mass, more preferably 30 to 350 parts by mass, based on 100 parts by mass of the total content of the polymer (a1) and the polymer (b) having no energy ray-curable group.

[0189] The total content of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and still more preferably 20 to 70% by mass, based on the total amount of the active ingredients of the first energy ray-curable resin composition (x1-2-1). When the content of the energy ray-curable component is within such a range, the energy ray-curability of the first energy ray-curable resin film (x1-2) becomes better.

[0190] In addition to the energy ray-curable component, the first energy ray-curable resin composition (x1-2-1) may contain one or more selected from the group consisting of a thermosetting component, a curing accelerator, a photopolymerization initiator, a filler, a coupling agent, a crosslinking agent, and a general-purpose additive, depending on the purpose. For example, by using a first energy ray curable resin composition (x1-2-1) containing an energy ray curable component and a thermosetting component, the first energy ray curable resin film (x1-2) formed thereby has an improved adhesive force to an adherend by heating, and the strength of the first cured resin film (r1) formed from this first energy ray curable resin film (x1-2) is also improved.

[0191] Examples of the thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general-purpose additive in the first energy ray curable resin composition (x1-2-1) include the same ones as the thermosetting component (B), curing accelerator (C), photopolymerization initiator (H), filler (D), coupling agent (E), crosslinking agent (F), and general-purpose additive (I) in the first thermosetting resin composition (x1-1-1).

[0192] In the first energy ray curable resin composition (x1-2-1), the thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general-purpose additive may each be used alone or in combination of two or more. When used in combination of two or more, their combinations and ratios can be arbitrarily selected. The contents of the thermosetting component, photopolymerization initiator, filler, coupling agent, crosslinking agent, and general-purpose additive in the first energy ray curable resin composition (x1-2-1) may be appropriately adjusted according to the purpose and are not particularly limited.

[0193] Since the handleability of the first energy ray curable resin composition (x1-2-1) is improved by dilution, it is preferably further contained with a solvent. Examples of the solvent contained in the first energy ray curable resin composition (x1-2-1) include the same ones as the solvent in the first thermosetting resin composition (x1-1-1). The solvent contained in the first energy ray curable resin composition (x1-2-1) may be used alone or in combination of two or more. When used in combination of two or more, their combinations and ratios can be arbitrarily selected.

[0194] (Other components) The first energy ray-curable resin composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may contain other components that do not fall under any of the above-described components, as long as the effects of the present invention are not impaired. The above-described other components contained in the first energy ray-curable resin composition (x1-2-1) and the first energy ray-curable resin film (x1-2) may be only one type, or may be two or more types. When there are two or more types, their combinations and ratios can be arbitrarily selected. The content of the above-described other components in the first energy ray-curable resin composition (x1-2-1) and the first energy ray-curable resin film (x1-2) is not particularly limited, and may be appropriately selected according to the purpose.

[0195] (Method for producing the first energy ray-curable resin composition (x1-2-1)) The first energy ray-curable resin composition (x1-2-1) can be obtained by blending each component for constituting the same. The addition order at the time of blending each component is not particularly limited, and two or more components may be added simultaneously. When using a solvent, the solvent may be used by mixing it with any one of the blending components other than this solvent to dilute this blending component in advance, or without diluting any one of the blending components other than the solvent in advance, and mixing the solvent with these blending components. The method for mixing each component at the time of blending is not particularly limited, and may be appropriately selected from known methods such as a method of rotating a stirrer or a stirring blade to mix; a method of mixing using a mixer; a method of adding ultrasonic waves to mix. The temperature and time at the time of adding and mixing each component are not particularly limited as long as each blending component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.

[0196] <First support sheet (Y1)> The first support sheet (Y1) functions as a support for supporting the first curable resin (x1). As shown in FIG. 10, the first support sheet (Y1) may be composed of only the base material 51, or may be a laminate of the base material 51 and the adhesive layer 61 as shown in FIG. 11, or may be a laminate in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are laminated in this order as shown in FIG. 12. A laminate in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are laminated in this order is suitable for use as a back grind sheet (b - BG).

[0197] Hereinafter, the base material of the first support sheet (Y1), the adhesive layer and the intermediate layer that the first support sheet (Y1) may have will be described.

[0198] (Base material) The base material is in the form of a sheet or film, and examples of its constituent materials include the following various resins. Examples of the resin constituting the base material include polyethylene such as low - density polyethylene (LDPE), linear low - density polyethylene (LLDPE), and high - density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin; ethylene - based copolymers (copolymers obtained using ethylene as a monomer) such as ethylene - vinyl acetate copolymer, ethylene - (meth) acrylic acid copolymer, ethylene - (meth) acrylic acid ester copolymer, and ethylene - norbornene copolymer; vinyl chloride - based resins (resins obtained using vinyl chloride as a monomer) such as polyvinyl chloride and vinyl chloride copolymer; polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene - 2,6 - naphthalene dicarboxylate, and wholly aromatic polyesters in which all constituent units have an aromatic cyclic group; copolymers of two or more of the above polyesters; poly (meth) acrylic acid ester; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; polyether ketone, etc. In addition, examples of the resin constituting the base material include polymer alloys such as a mixture of the polyester and other resins. The polymer alloy of the polyester and other resins preferably has a relatively small amount of resin other than the polyester. In addition, examples of the resin constituting the base material include crosslinked resins in which one or more of the resins exemplified so far are crosslinked; and modified resins such as ionomers using one or more of the resins exemplified so far.

[0199] The resin constituting the base material may be used alone or in combination of two or more. When there are two or more resins constituting the base material, their combination and ratio can be arbitrarily selected.

[0200] The base material may be only one layer (single layer) or may be a plurality of layers of two or more layers. When the base material is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0201] The thickness of the base material is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, still more preferably 15 μm to 300 μm, and even more preferably 20 μm to 150 μm. Here, the "thickness of the base material" means the thickness of the entire base material. For example, the thickness of a base material composed of a plurality of layers means the total thickness of all the layers constituting the base material.

[0202] The base material preferably has high thickness accuracy, that is, the thickness variation is suppressed regardless of the site. Among the above-described constituent materials, examples of materials with high thickness accuracy that can be used to constitute such a base material include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, and the like.

[0203] In addition to the main constituent materials such as the resin, the base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

[0204] The base material may be transparent, opaque, colored according to the purpose, or another layer may be vapor-deposited thereon. Further, when the first curable resin film (x1) is the first energy ray curable resin film (x1-2) and the adhesive layer is an energy curable adhesive layer, it is preferable that the base material transmits energy rays.

[0205] The base material can be manufactured by a known method. For example, a base material containing a resin can be manufactured by molding a resin composition containing the resin.

[0206] (Adhesive layer) The adhesive layer is in the form of a sheet or film and contains an adhesive. Examples of the adhesive include acrylic resins (adhesives composed of resins having a (meth)acryloyl group), urethane resins (adhesives composed of resins having a urethane bond), rubber resins (adhesives composed of resins having a rubber structure), silicone resins (adhesives composed of resins having a siloxane bond), epoxy resins (adhesives composed of resins having an epoxy group), and adhesive resins such as polyvinyl ether and polycarbonate. Among these, acrylic resins are preferred.

[0207] In the present invention, the "adhesive resin" is a concept including both a resin having adhesiveness and a resin having adhesivity. For example, it includes not only a resin having adhesiveness by itself, but also a resin showing adhesiveness by combination with other components such as additives, and a resin showing adhesivity by the presence of a trigger such as heat or water.

[0208] The adhesive layer may be only one layer (single layer) or may be two or more layers. When the adhesive layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0209] The thickness of the adhesive layer is preferably from 1 μm to 1000 μm, more preferably from 5 μm to 500 μm, and still more preferably from 10 μm to 100 μm. Here, the "thickness of the adhesive layer" means the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of a plurality of layers means the total thickness of all the layers constituting the adhesive layer.

[0210] The adhesive layer may be formed using an energy ray curable adhesive or may be formed using a non-energy ray curable adhesive. An adhesive layer formed using an energy ray curable adhesive can easily adjust the physical properties before and after curing.

[0211] <Intermediate layer> The intermediate layer is in the form of a sheet or a film, and the constituent material thereof may be appropriately selected according to the purpose and is not particularly limited. For example, when the purpose is to suppress the deformation of the first cured resin film (r1) due to the reflection of the shape of the bumps present on the semiconductor surface on the protective film covering the semiconductor surface, preferred constituent materials of the intermediate layer include urethane (meth)acrylate and the like from the viewpoint of high unevenness followability and further improvement in the adhesiveness of the intermediate layer.

[0212] The intermediate layer may be only one layer (single layer) or may be two or more layers. When the intermediate layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0213] The thickness of the intermediate layer can be appropriately adjusted according to the height of the bumps on the surface of the semiconductor to be protected. However, from the viewpoint that the influence of bumps with relatively high height can also be easily absorbed, it is preferably 50 μm to 600 μm, more preferably 70 μm to 500 μm, and even more preferably 80 μm to 400 μm. Here, the "thickness of the intermediate layer" means the thickness of the entire intermediate layer. For example, in the case of an intermediate layer composed of multiple layers, the thickness of the intermediate layer means the total thickness of all the layers constituting the intermediate layer.

[0214] Next, a method for manufacturing the first laminate (α1) will be described.

[0215] [Method for manufacturing the first laminate (α1)] The first laminate (α1) can be manufactured by sequentially laminating the above-mentioned respective layers so as to have the corresponding positional relationship. For example, when manufacturing the first support sheet (Y1), in the case of laminating an adhesive layer or an intermediate layer on a substrate, an adhesive composition or an intermediate layer-forming composition is applied on the substrate and, if necessary, dried or irradiated with energy rays to laminate the adhesive layer or the intermediate layer. Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a roll knife coating method, a blade coating method, a die coating method, a gravure coating method, and the like.

[0216] On the other hand, for example, when further laminating the first curable resin film (x1) on the adhesive layer laminated on the substrate, it is possible to directly form the first curable resin (x1) by applying the first thermosetting resin composition (x1-1-1) or the first energy ray curable resin composition (x1-2-1) on the adhesive layer. Similarly, when further laminating an adhesive layer on the intermediate layer laminated on the substrate, it is possible to directly form the adhesive layer by applying an adhesive composition on the intermediate layer.

[0217] Thus, when forming a continuous two-layer laminated structure using any of the compositions, it is possible to further apply the composition on the layer formed from the composition to newly form a layer. However, for the layer to be laminated later out of these two layers, the composition should be pre-formed on another release film in advance, and the exposed surface on the side opposite to the side in contact with the release film of this pre-formed layer is preferably bonded to the exposed surface of the remaining already formed layer to form a continuous two-layer laminated structure. At this time, the composition is preferably applied to the release-treated surface of the release film. The release film can be removed as needed after the formation of the laminated structure.

[0218] [Second laminate (α2)] The second laminate (α2) is not particularly limited as long as it can form a protective film on the back surface of the semiconductor wafer. For example, the same configuration as that of the first laminate (α1) can be adopted. Therefore, the second curable resin (x2) of the second laminate (α2) may have the same material and configuration as the above-mentioned first curable resin (x1).

[0219] (Colorant (J)) Here, from the viewpoint of improving the visibility of the printing formed by laser marking, and from the viewpoint of making the grinding marks on the back surface of the semiconductor chip less visible to improve the designability of the semiconductor chip, etc., the second curable resin (x2) and the composition for forming the second curable resin for forming the second curable resin (x2) preferably contain a colorant (J). Examples of the colorant (J) include known ones such as inorganic pigments, organic pigments, and organic dyes. Examples of the organic pigments and organic dyes include, for example, ammonium-based dyes, cyanine-based dyes, merocyanine-based dyes, croconium-based dyes, squarium-based dyes, azulenium-based dyes, polymethine-based dyes, naphthoquinone-based dyes, pyrylium-based dyes, phthalocyanine-based dyes, naphthalocyanine-based dyes, naphtholactam-based dyes, azo-based dyes, condensed azo-based dyes, indigo-based dyes, perinone-based dyes, perylene-based dyes, dioxazine-based dyes, quinacridone-based dyes, isoindolinone-based dyes, quinophthalone-based dyes, pyrrole-based dyes, thioindigo-based dyes, metal complex-based dyes (metal complex salts), dithiol metal complex-based dyes, indole phenol-based dyes, triallylmethane-based dyes, anthraquinone-based dyes, naphthol-based dyes, azomethine-based dyes, benzimidazolone-based dyes, pyranthrone-based dyes, and threne-based dyes. Examples of the inorganic pigments include, for example, carbon black, cobalt-based dyes, iron-based dyes, chromium-based dyes, titanium-based dyes, vanadium-based dyes, zirconium-based dyes, molybdenum-based dyes, ruthenium-based dyes, platinum-based dyes, ITO (indium tin oxide)-based dyes, ATO (antimony tin oxide)-based dyes, and the like.

[0220] The colorant (J) contained in the second curable resin (x2) and the composition for forming the second curable resin (x2) for forming the second curable resin (x2) may be only one kind or two or more kinds. When there are two or more kinds of the colorant (J), their combinations and ratios can be arbitrarily selected. When using the colorant (J), the content of the colorant (J) in the second curable resin film (x2) may be appropriately adjusted according to the purpose. For example, as described above, the second cured resin film (r2), which is a cured product formed by curing the second curable resin (x2), may be printed by laser irradiation. By adjusting the content of the colorant (J) in the second curable resin (x2) and adjusting the light transmittance of the protective film, the print visibility can be adjusted. In addition, by adjusting the content of the colorant (J), the design property of the protective film can be improved, and the grinding marks on the back surface of the semiconductor wafer can be made less visible. Considering these points, in the composition for forming the second curable resin for forming the second curable resin film (x2), the ratio of the content of the colorant (J) to the total content of all components other than the solvent (also referred to as the total mass of the solid content of the composition for forming the second curable resin film), that is, the content of the colorant (J) in the second curable resin (x2) is preferably 0.1 to 10% by mass, more preferably 0.1 to 7.5% by mass, and particularly preferably 0.1 to 5% by mass. When the content of the colorant (J) is equal to or higher than the lower limit value, the effect of using the colorant (J) can be obtained more significantly. In addition, when the content of the colorant (J) is equal to or lower than the upper limit value, an excessive decrease in the light transmittance of the second curable resin (x2) is suppressed.

[0221] In addition, in the above-described first curable resin (x1) and the composition for forming the first curable resin, the colorant (J) may be contained. However, from the viewpoint of ensuring the visibility of the planned dividing line of the wafer for manufacturing the semiconductor chip, the content of the colorant (J) is preferably an amount within the range that ensures the transparency at a level that can ensure the visibility of the planned dividing line.

[0222] Further, the second support sheet (Y2) of the second laminate (α2) may have the same configuration as the above-described first support sheet (Y1). Specifically, the second support sheet (Y2) may consist only of the base material 51 as shown in FIG. 10, similar to the first support sheet (Y1), or may be an adhesive sheet in which the base material 51 and the adhesive layer 61 are laminated as shown in FIG. 11, or may be an adhesive sheet in which the base material 51, the intermediate layer 71, and the adhesive layer 61 are laminated as shown in FIG. 12. The base material, the intermediate layer, and the adhesive layer of the second support sheet (Y2) may have the same configuration and material as the base material, the intermediate layer, and the adhesive layer of the first support sheet (Y1).

Example

[0223] The present invention will be specifically described by the following examples, but the present invention is not limited to the following examples.

[0224] 1. Preparation of Wafer for Manufacturing Semiconductor Chip As a wafer for manufacturing a semiconductor chip, a 12-inch silicon wafer (wafer thickness: 775 μm) with a half-cut dividing line was used. The width of the half-cut portion (width of the groove portion) of the silicon wafer was 200 μm, and the depth of the groove was 200 μm.

[0225] 2. Attachment of First Curing Resin (x1) On the surface side (half-cut formation surface) of the wafer for manufacturing a semiconductor chip, a first laminate (α1) in which a back grind tape (manufactured by Lintec Corporation, product name "E-8510HR") as the first support sheet (Y1) and a layer (X1) of the first curing resin (x1) with a thickness of 90 μm were laminated was attached while pressing under the following conditions with the first curing resin (x1) side as the attachment surface. · Attachment device: Fully automatic bonding machine (manufactured by Lintec Corporation, product name "RAD-3510") · Roller pressure: 0.5 MPa · Roller height: -400 μm · Attachment speed: 5 mm / sec · Attachment temperature: 90 °C

[0226] The shear modulus of elasticity G’ of layer (X1) was 1,000 Pa. The shear modulus of elasticity G’ was measured by the following method. Regarding the first curable resin (x1), ten sheets of the first curable resin (x1) with a thickness of 100 μm were laminated to prepare a layer (X1) of the first curable resin (x1) with a thickness of 1 mm. Next, this first curable resin (x1) was cut into a disc shape with a diameter of 8 mm to obtain a test piece of the layer (X1) of the first curable resin (x1). Then, the installation location of the test piece of the shear viscosity measuring device: dynamic viscoelasticity measuring device (ARES; manufactured by TA Instruments) was preheated at 90 °C in advance. The test piece was placed at this installation location, and a measuring jig was pressed against the upper surface of the test piece to fix and install the test piece at the said installation location. Next, under the conditions of a temperature of 90 °C and a measurement frequency of 1 Hz, a strain of 400% was generated in the test piece, and the shear modulus of elasticity G’ of the test piece was measured.

[0227] The first curable resin (x1) was produced using the first thermosetting resin composition (x1-1-1). The components used for preparing the first thermosetting resin composition (x1-1-1) are shown below. · Polymer component Polymer component (A)-1: An acrylic resin obtained by copolymerizing butyl acrylate (hereinafter abbreviated as “BA”) (55 parts by mass), methyl acrylate (hereinafter abbreviated as “MA”) (10 parts by mass), glycidyl methacrylate (hereinafter abbreviated as “GMA”) (20 parts by mass), and 2-hydroxyethyl acrylate (hereinafter abbreviated as “HEA”) (15 parts by mass); weight average molecular weight 800,000, glass transition temperature -28 °C. · Epoxy resin Epoxy resin (B1)-1: Liquid bisphenol F type epoxy resin (“YL983U” manufactured by Mitsubishi Chemical Corporation); weight average molecular weight = 340 Epoxy resin (B1)-2: Polyfunctional aromatic type epoxy resin (“EPPN-502H” manufactured by Nippon Kayaku Co., Ltd.); weight average molecular weight = 1,000 Epoxy resin (B1)-3: Dicyclopentadiene type epoxy resin ("EPICLON HP-7200" manufactured by DIC Corporation); weight average molecular weight = 600 ·Thermosetting agent Thermosetting agent (B2)-1: Novolac type phenol resin ("BRG-556" manufactured by Showa Denko K.K.) ·Curing accelerator Curing accelerator (C)-1: 2-Phenyl-4,5-dihydroxymethylimidazole ("Curezol 2PHZ-PW" manufactured by Shikoku Kasei Kogyo Co., Ltd.) ·Filler Filler (D)-1: Spherical silica modified with epoxy groups ("Admanano YA050C-MKK" manufactured by Admatechs Co., Ltd.); 0.05 μm (average particle size); 19 mass% (content in the first thermosetting resin composition (x1-1-1))

[0228] 100 parts by mass of polymer component (A)-1, 135 parts by mass of epoxy resin (B1)-1, 90 parts by mass of epoxy resin (B1)-2, 150 parts by mass of epoxy resin (B1)-3, 180 parts by mass of thermosetting agent (B2)-1, 1 part by mass of curing accelerator (C)-1, and 160 parts by mass of filler (D)-1 were dissolved or dispersed in methyl ethyl ketone and stirred at 23°C to prepare a first thermosetting resin composition (x1-1-1) having a solid content concentration of 55 mass%.

[0229] The first thermosetting resin composition (x1-1-1) obtained above was coated on the release-treated surface of a release film (manufactured by Lintec Corporation, "SP-PET381031", thickness 38 μm) in which one side of a polyethylene terephthalate film was release-treated by silicone treatment, and dried at 100°C for 2 minutes to produce a first thermosetting resin film (x1-1) having a thickness of 90 μm and thermosetting properties as the first curable resin (x1). Next, the exposed surface of the first curable resin (x1) was bonded to the exposed surface of the adhesive layer of the back grind tape to obtain a first laminate (α1) in which the back grind tape, the first curable resin (x1), and the release film were laminated in this order in their thickness directions. When attaching this first laminate (α1) to a wafer for manufacturing a semiconductor chip, the release film was peeled off from the first laminate (α1) to expose the first curable resin (x1) for use.

[0230] 3. Evaluation The wafer for manufacturing a semiconductor chip with the first curable resin (x1) attached was heated at 160°C for 1 hour to cure it into the first cured resin film (r1). Then, back grinding was performed to grind the back surface to 625 μm, and after making the thickness of the wafer for manufacturing a semiconductor chip 150 μm, back surface observation and cross-section polishing observation were carried out. The cross-section polishing observation was performed with an optical microscope ("VHX-1000" manufactured by Keyence Corporation).

[0231] 4. Results The back surface observation results are shown in FIG. 13, and the cross-section polishing observation results are shown in FIG. 14. From both results, it was confirmed that the embeddability of the first cured resin film (r1) into the groove portion 13 was good. Also, from the cross-section polishing observation results, it was confirmed that the coverage of the first cured resin film (r1) on the wafer surface was also good. From these results, it was confirmed that it is possible to obtain a semiconductor chip in which the bump formation surface and the side surface are well covered with the first cured resin film (r1) by the manufacturing method of the present invention.

Explanation of Signs

[0232] 10 Wafer for manufacturing a semiconductor chip 11 Wafer 11a Bump formation surface 11b Back surface 12 Bump 13 Groove portion 40 Semiconductor chip x1 First curable resin r1 First cured resin film X1 Layer Y1 First support sheet α1 First laminate x2 Second curable resin r2 Second cured resin film X2 Layer Y2 Second support sheet α2 Second laminate 51 Base material 61 Adhesive layer 71 Intermediate layer

Claims

1. including the following steps (S1) to (S4) in this order, ・ Step (S1): Prepare a semiconductor chip manufacturing wafer having a bump formation surface with bumps, on which a groove as a planned division line is formed without reaching the back surface. ・ Step (S2): Press and attach a first curable resin (x1) to the bump formation surface of the semiconductor chip manufacturing wafer, coat the bump formation surface of the semiconductor chip manufacturing wafer with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the semiconductor chip manufacturing wafer. ・ Step (S3): Cure the first curable resin (x1) to obtain a semiconductor chip manufacturing wafer with a first cured resin film (r1). ・ Step (S4): Singulate the semiconductor chip manufacturing wafer with the first cured resin film (r1) along the planned division line to obtain semiconductor chips in which at least the bump formation surface and the side surfaces are coated with the first cured resin film (r1). Furthermore, after the step (S2) and before the step (S3), a method for manufacturing a semiconductor chip including the following step (S - BG), ・ Step (S - BG): Grind the back surface of the semiconductor chip manufacturing wafer. The step (S2) is carried out by pressing and attaching a first laminate (α1) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the semiconductor chip manufacturing wafer, with the layer (X1) as the attachment surface. The step (S - BG) is carried out by peeling the first support sheet (Y1) from the first laminate (α1) after grinding the back surface of the semiconductor chip manufacturing wafer with the first laminate (α1) attached. The step (S4) is carried out by cutting the portion of the first cured resin film (r1) formed in the groove in the first cured resin film (r1) of the semiconductor chip manufacturing wafer with the first cured resin film (r1) along the planned division line. A method for manufacturing a semiconductor chip.

2. including the following steps (S1) to (S4) in this order, ・ Step (S1): Prepare a semiconductor chip manufacturing wafer having a bump formation surface with bumps, on which a groove as a planned division line is formed without reaching the back surface. - Step (S2): Press and attach a first curable resin (x1) to the bump formation surface of the wafer for manufacturing the semiconductor chip, coat the bump formation surface of the wafer for manufacturing the semiconductor chip with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the wafer for manufacturing the semiconductor chip. - Step (S3): Cure the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1). - Step (S4): Singulate the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned dividing line to obtain semiconductor chips in which at least the bump formation surface and the side surfaces are coated with the first cured resin film (r1). Furthermore, a method for manufacturing a semiconductor chip, including the following step (S-BG) after the step (S3) and before the step (S4), - Step (S-BG): Grind the back surface of the wafer for manufacturing the semiconductor chip. The step (S2) is carried out by pressing and attaching a first laminate (α1) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the wafer for manufacturing the semiconductor chip, with the layer (X1) as the attachment surface. The step (S3) is carried out without peeling the first support sheet (Y1) from the first laminate (α1). The step (S-BG) is carried out by peeling the first support sheet (Y1) from the first laminate (α1) after grinding the back surface of the wafer for manufacturing the semiconductor chip with the first laminate (α1) attached. The step (S4) is carried out by cutting the portion of the first cured resin film (r1) formed in the groove in the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned dividing line. A method for manufacturing a semiconductor chip.

3. Including the following steps (S1) to (S4) in this order, - Step (S1): Prepare a wafer for manufacturing a semiconductor chip in which a groove as a planned dividing line is formed on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps, without reaching the back surface. - Step (S2): Press and attach the first curable resin (x1) to the bump formation surface of the wafer for manufacturing the semiconductor chip, coat the bump formation surface of the wafer for manufacturing the semiconductor chip with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the wafer for manufacturing the semiconductor chip. - Step (S3): Cure the first curable resin (x1) to obtain a wafer for manufacturing a semiconductor chip with a first cured resin film (r1). - Step (S4): Singulate the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned division line to obtain semiconductor chips at least the bump formation surface and side surfaces of which are coated with the first cured resin film (r1). Furthermore, a method for manufacturing a semiconductor chip, including the following step (S-BG) after the step (S3) and before the step (S4), - Step (S-BG): Grind the back surface of the wafer for manufacturing the semiconductor chip. The step (S2) is carried out by pressing and attaching a first laminate (α1) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the wafer for manufacturing the semiconductor chip, with the layer (X1) as the attachment surface. After the step (S2) and before the step (S3), the first support sheet (Y1) is peeled off from the first laminate (α1). The step (S-BG) is carried out by attaching a back grinding sheet (b-BG) to the surface of the first cured resin film (r1) of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1), grinding the back surface of the wafer for manufacturing the semiconductor chip with the back grinding sheet (b-BG) attached, and then peeling the back grinding sheet (b-BG) from the wafer for manufacturing a semiconductor chip with the first cured resin film (r1). The step (S4) is carried out by cutting the portion of the first cured resin film (r1) formed in the groove of the wafer for manufacturing a semiconductor chip with the first cured resin film (r1) along the planned division line. A method for manufacturing a semiconductor chip.

4. Including the following steps (S1) to (S4) in this order, - Step (S1): Prepare a wafer for manufacturing semiconductor chips, on the bump formation surface of a semiconductor wafer having a bump formation surface with bumps, where a groove as a planned division line is formed without reaching the back surface. - Step (S2): Press and attach a first curable resin (x1) to the bump formation surface of the wafer for manufacturing semiconductor chips, coat the bump formation surface of the wafer for manufacturing semiconductor chips with the first curable resin (x1), and embed the first curable resin (x1) in the groove formed in the wafer for manufacturing semiconductor chips. - Step (S3): Cure the first curable resin (x1) to obtain a wafer for manufacturing semiconductor chips with a first cured resin film (r1). - Step (S4): Singulate the wafer for manufacturing semiconductor chips with the first cured resin film (r1) along the planned division line to obtain semiconductor chips at least with the bump formation surface and side surfaces coated with the first cured resin film (r1). Furthermore, in the step (S4), a method for manufacturing semiconductor chips, including the following step (S - BG), - Step (S - BG): Grind the back surface of the wafer for manufacturing semiconductor chips. The step (S2) is implemented by pressing and attaching a first laminate (α1) having a laminated structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the wafer for manufacturing semiconductor chips, with the layer (X1) as the attachment surface. After the step (S2) and before the step (S3), peel the first support sheet (Y1) from the first laminate (α1). The step (S4) is implemented by making a cut along the planned division line in a portion of the first cured resin film (r1) formed in the groove of the wafer for manufacturing semiconductor chips with the first cured resin film (r1), or forming a modified region along the planned division line, and then, as the step (S - BG), attaching a back grinding sheet (b - BG) to the surface of the first cured resin film (r1) of the wafer for manufacturing semiconductor chips with the first cured resin film (r1), and grinding the back surface of the wafer for manufacturing semiconductor chips with the back grinding sheet (b - BG) attached. A method for manufacturing semiconductor chips.

5. Furthermore, a method for manufacturing a semiconductor chip according to any one of claims 1 to 4, including the following step (T). - Step (T): A step of forming a second cured resin film (r2) on the back surface of the wafer for manufacturing the semiconductor chip

6. The method for manufacturing a semiconductor chip according to any one of claims 1 to 5, further including the following step (U). - Step (U): A step of removing the first cured resin film (r1) covering the top of the bump or the first cured resin film (r1) attached to a part of the top of the bump to expose the top of the bump

7. The method for manufacturing a semiconductor chip according to claim 6, wherein the step (U) is performed by a plasma etching process.

8. When performing strain dispersion measurement to measure the shear modulus G' of the test piece of the layer (X1) by generating a strain of 400% in the test piece of the layer (X1) under the conditions of a temperature of 90° C. and a frequency of 1 Hz, the shear modulus G' is 5.0×10 Pa to 1.0×10 ６ Pa, and the method for manufacturing a semiconductor chip according to any one of claims 1 to 7.

9. The method for manufacturing a semiconductor chip according to any one of claims 1 to 8, wherein the thickness of the layer (X1) is 10 μm or more and 200 μm or less.

10. The method for manufacturing a semiconductor chip according to any one of claims 1 to 9, wherein the width of the groove portion is 10 μm to 2000 μm.

11. The method for manufacturing a semiconductor chip according to any one of claims 1 to 10, wherein the depth of the groove portion is 30 μm to 700 μm.

12. The method for manufacturing a semiconductor chip according to any one of claims 1 to 11, wherein the first cured resin film (r1) is transparent.

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