Process chamber with side support

Abstract

To provide an improved mechanical support for reaction chambers.SOLUTION: A curved process chamber 132 includes a curved upper wall 101 extending longitudinally from a first end portion 102 of the reaction chamber to a second end portion 103 of the reaction chamber. The process chamber includes a curved lower wall 104 cooperating with the curved upper wall 101 to at least partially define an internal cavity 105, the curved lower wall 104 connected to the curved upper wall 101 from the first end portion 102 to the second end portion 103 at a first side 107 of the reaction chamber and at a second side 109 of the reaction chamber. A rail running along interfaces 106, 108 extends along an exterior surface of the process chamber from the first end portion 102 to the second end portion 103, extends along a connection between the curved upper wall 101 and the curved lower wall 104 or along the exterior surface of the reaction chamber 132 outside the internal cavity 105 near the interfaces 106, 108.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Cross - Reference to Related Applications This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 965,717, filed on January 24, 2020, the entire content of which is hereby incorporated by reference in its entirety and for all purposes.

[0002] The present disclosure generally relates to a semiconductor processing chamber having a side support, and more specifically, to the use of ribs on the outer surface of a process chamber to enhance the structural integrity of the process chamber.

Background Art

[0003] A process or reaction chamber for processing semiconductor wafers is typically made of quartz (quartz glass) or a similar material because quartz is substantially transparent to radiant energy. A radiant heater may be positioned adjacent to the outside of the chamber, and the wafers being processed within the chamber can be heated to a high temperature without heating the chamber walls to the same level. Further, quartz can withstand very high temperatures and, due to its inert properties, can withstand degradation by various process gases, which is desirable.

[0004] When positioning a flat wafer for chemical vapor deposition, when the deposition gas flows parallel to the wafer, it may be desirable for the chamber walls to be parallel to the flat surface of the wafer in order to obtain a uniform deposition on the wafer surface. However, in applications where the pressure within the quartz chamber is reduced to a value far below ambient atmospheric pressure, a rounded chamber is often preferred from a strength perspective because its curved surface can best withstand the inward force. A flat wall may collapse inward more quickly as the internal pressure decreases than a convex - outward wall of similar size and thickness.

[0005] Accordingly, there remains a continuing need for an improved mechanical support for reaction chambers.

SUMMARY OF THE INVENTION

[0006] In one embodiment, the process chamber can include a curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, curved lower walls connected to the curved upper wall from the first end to the second end at a first side surface and a second side surface of the reaction chamber, and rails extending along the outer surface of the process chamber from the first end to the second end, the rails being disposed at or near a connection between the curved upper wall and the curved lower wall.

[0007] In another embodiment, the process chamber can include a curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, curved lower walls connected to the curved upper wall from the first end to the second end at a first side surface and a second side surface of the reaction chamber, and a first plurality of first rib support structures disposed along only a portion of the curved upper wall and along only a portion of the curved lower wall at or near a connection between the curved upper wall and the curved lower wall.

[0008] In some embodiments, at least one of the curved upper wall and the curved lower wall includes a circular, elliptical, or polynomial shape. In some embodiments, at least one of the curved upper wall and the curved lower wall includes a substantially uniform thickness. In some embodiments, the curved upper wall and the curved lower wall are both welded together. In some embodiments, the curved upper wall and the curved lower wall are connected through a connector. In some embodiments, the connector is E-shaped. In some embodiments, the connector includes a top, a bottom, and a middle portion. In some embodiments, the middle portion is connected to a horizontal shelf. In some embodiments, the connector is curved. In some embodiments, the process chamber is made of a material that is substantially transparent to radiant energy. In some embodiments, the process chamber is made of quartz. In some embodiments, the side ribs are directly welded to the curved upper wall and the curved lower wall. In some embodiments, the plurality of side ribs do not contact the curved top wall and the curved bottom wall. In some embodiments, the process chamber includes at least one flange that contacts the curved upper wall and the curved lower wall at a first end and a second end. In some embodiments, at least one flange is configured to connect to an input manifold or an output manifold. In some embodiments, at least one flange includes a first flange configured to connect to an input manifold and a second flange configured to connect to an output manifold. In some embodiments, the process chamber includes at least one rail connected to the plurality of side ribs. In some embodiments, at least one rail extends along a first interface or a second interface. In some embodiments, at least one rail connects to at least one of the curved upper wall and the curved lower wall. In some embodiments, at least one rail is welded to at least one of the curved upper wall and the curved lower wall. In some embodiments, the plurality of side ribs includes a plurality of top rib support structures disposed at the top of at least one rail and a plurality of bottom rib support structures disposed at the bottom of the rail.In some embodiments, at least one rail comprises a first rail and a second rail, and the plurality of rib support structures comprises a first plurality of rib support structures connected to the first rail and a second plurality of rib support structures connected to the second rail. In some embodiments, the plurality of rib support structures are evenly spaced across the first interface or the second interface. In some embodiments, the plurality of rib support structures comprises a first plurality of side rib support structures located on the first interface and a second plurality of rib support structures located on the second interface.

[0009] In another embodiment, the reaction chamber can include a curved upper wall that extends longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, and a curved lower wall that cooperates with the curved upper wall to at least partially define an internal cavity, the curved lower wall being connected to the curved upper wall at the first side and the second side of the reaction chamber from the first end to the second end, and a first rib support structure disposed on the first side of the reaction chamber near or at the connection between the curved upper wall and the curved lower wall, the first rib support structure having a first curved top fixed to the curved outer surface of the curved upper wall along only a portion of the curved upper wall and a first curved bottom fixed to the curved outer surface of the curved lower wall along only a portion of the curved lower wall.

[0010] In some embodiments, the curved lower wall is mechanically connected to the curved upper wall via an intervening connector. In some embodiments, the intervening connector is an E-shaped connector. In some embodiments, the process chamber includes a second rib support structure disposed on a second side of the reaction chamber across a second interface, the second rib support structure having a second curved top fixed to the curved upper wall and a second curved bottom fixed to the curved lower wall. In some embodiments, the process chamber includes a plurality of first rib support structures disposed on a first side of the reaction chamber and longitudinally spaced from each other, each first rib support structure of the plurality of first rib support structures having a first curved top fixed to the curved outer surface of the curved upper wall and a first curved bottom fixed to the curved outer surface of the curved lower wall. In some embodiments, the process chamber includes a plurality of second rib support structures disposed on a second side of the reaction chamber and longitudinally spaced from each other, each second rib support structure of the plurality of second rib support structures having a second curved top fixed to the curved outer surface of the curved upper wall and a second curved bottom fixed to the curved outer surface of the curved lower wall. In some embodiments, the process chamber includes a first rail extending along and mechanically fixed to the outer surface of the reaction chamber outside the internal cavity along a first interface. In some embodiments, the first curved top of each first rib support structure is disposed above the first rail, and the first curved bottom of each first rib support structure is disposed below the first rail. In some embodiments, the first curved top of each first rib support structure is welded to the upper surface of the first rail, and the first curved bottom of each first rib support structure is welded to the lower surface of the first rail. In some embodiments, the first curved top and the first curved bottom are integrally formed together. In some embodiments, the first curved top comprises a curved surface shaped to conform to the outer surface of the curved upper wall, and the first curved bottom comprises a curved surface shaped to conform to the outer surface of the curved lower wall. In some embodiments, the first curved top and the first curved bottom cooperate to define a generally C-shaped contour.In some embodiments, the curved upper wall is welded to the curved lower wall. In some embodiments, the curved upper wall and the curved lower wall contain quartz. In some embodiments, the process chamber is disposed within an internal cavity and includes a horizontal shelf configured to support a substrate.

[0011] In another embodiment, the process chamber includes a curved upper wall that extends longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, and a curved lower wall that cooperates with the curved upper wall to at least partially define an internal cavity, wherein an upper end of the curved lower wall is connected at a first side and a second side of the reaction chamber to a lower end of the curved upper wall from the first end to the second end via a junction, and a first maximum thickness of the junction is within 20% of at least one second maximum thickness of a lower end of the curved upper wall and an upper end of the curved lower wall.

[0012] In some embodiments, the junction includes an E-shaped connector welded to the curved upper and lower walls. In some embodiments, the junction includes a linear or curved base having three mechanical connection points extending from an internal portion of a first end, a second end, and a base. In some embodiments, the junction includes a welded connection between the curved upper wall and the curved lower wall. In some embodiments, the first maximum thickness is substantially the same as the second maximum thickness. In some embodiments, the junction includes a vertical sidewall extending linearly between an upper end and a lower end, and the vertical sidewall is welded to the upper and lower ends. In some embodiments, the process chamber includes a first plurality of first rib support structures disposed at or near the junction, along only a portion of the curved upper wall, and along only a portion of the curved lower wall.

Brief Description of the Drawings

[0013] Here, these and other features, aspects, and advantages of the present invention will be described with reference to the drawings of several embodiments that are intended to illustrate rather than limit the present invention.

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[0031] The following description of exemplary embodiments is merely exemplary and is intended for illustration only, and the following description is not intended to limit the scope of the present disclosure or the scope of the claims. Further, the enumeration of multiple embodiments having the described features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the described features.

[0032] The various embodiments disclosed herein provide structural support for a reaction chamber (such as a horizontal reaction chamber) in a manner that ensures a uniform or even heat distribution. In the various embodiments disclosed herein, for example, a reaction chamber (which may be formed of quartz in some embodiments) may be defined by mechanically connecting a curved upper wall to a curved lower wall. Ribs may be provided along the sides of the reaction chamber for mechanical support. In some arrangements, the ribs may extend above or below the process chamber to provide structural support. For example, in some arrangements, the ribs may extend around the entire perimeter of the reaction chamber. However, one drawback of such a design is that, although quartz is substantially transparent to radiation lamp energy, thick ribs may present regions of much thicker quartz, and thus the ribs may locally absorb more lamp energy and attenuate the lamp energy delivered to the wafer. This attenuation of energy creates cooler regions (e.g., shadows) on the wafer. Such non-uniformity of temperature on the wafer surface degrades the quality of the film that can be grown thereon, especially for processing conditions that are temperature sensitive.

[0033] Furthermore, providing ribs at the top of the process chamber can be difficult to manufacture consistently, increasing variability and manufacturing costs for the construction of the process chamber. For rectangular process chambers, due to the inherently weak design based on a planar top wall and a planar bottom wall, ribs can be utilized not only on the sides of the chamber but also on the top and bottom of the chamber to maintain structural stability. A curved process chamber having a curved top wall and a curved bottom wall advantageously provides a stronger structure where ribs are disposed only on the sides of the chamber, without being disposed on the curved top wall and the curved bottom wall, and can maintain structural integrity. Thus, a curved process chamber having ribs only on the sides of the chamber provides adequate structural integrity and improves thermal uniformity during processing.

[0034] Furthermore, some embodiments disclosed herein enable improved welded connections, for example, by connecting upper and lower curved walls that have substantially the same thickness as an intervening connector. Some process chambers can have side rails having a different thickness than the top and bottom walls. However, when welding materials of different thicknesses together, the welded joint can be in a poor state. Thus, in various embodiments, a curved process chamber can include a curved top wall, a curved bottom wall, and a connector intervening between the curved top wall and the curved bottom wall. The connector intervening between the curved top wall and the curved bottom wall can have substantially the same thickness at the location where the walls meet to create a better weld. Further, in some embodiments, the curved top wall and the curved bottom wall can meet at first and second interfaces that can include connectors. In other embodiments, the top wall and the bottom wall can be in direct contact with each other. The curved top wall and the curved bottom wall can have substantially the same thickness at the interface portion to create a better weld.

[0035] These solutions are demonstrated in the various embodiments disclosed in the drawings.

[0036] FIG. 1 shows a cross-sectional view of a wafer processing system as seen in FIG. 2B of U.S. Patent No. 8,067,061, issued on November 29, 2011, entitled "REACTION APPARATUS HAVING MULTIPLE ADJUSTABLE EXHAUST PORTS", the entire content of which is incorporated herein by reference. This wafer processing system includes a reactor 30 having a process chamber 32 attached to an input manifold 34 and an output manifold 36 through a contact point 50. The wafer process chamber (also referred to herein as the reaction chamber) may include a wafer holder 54, which may be a susceptor attached to a rotating stand 60. The reactor 30 includes a reaction chamber 32, an inlet manifold 34, and an outlet manifold 36. The reaction chamber 32 includes an upper wall 38, a lower wall 40, a first side wall (not shown), a second side wall opposite the first side wall (not shown), and a hollow tube 46 extending downward from the lower wall 40, thereby forming a reaction space 48 enclosed therein. In one embodiment, the reaction chamber 32 is formed of transparent quartz.

[0037] The inlet manifold 34 may be configured to introduce reactant gas into the reaction space 48. The outlet manifold 36 is operably attached to the reaction chamber 32 to draw out excess reactant gas and by-products of the reaction between the reactant gas in the reaction space 48 and the substrate or wafer 54. The excess reactant gas and by-products may be collectively referred to as the effluent gas exiting the chamber at the end of the reaction chamber 32. In one embodiment, the reaction chamber 32 includes a single outlet opening (not shown) that communicates with the outlet manifold 36. The excess reactant gas and by-products are transferred from the outlet opening of the reaction chamber 32 through the outlet manifold 36 to an exhaust system (not shown) by a single outlet port 56. In other embodiments, a plurality of outlet openings and outlet ports may be provided.

[0038] As shown in FIG. 1, the substrate or wafer 54 is supported within the reaction space 48 of the reaction chamber 32 by substrate support in the form of a susceptor 58. The susceptor 58 is operably supported by a susceptor support connected to a shaft 60 that extends downwardly, and the shaft 60 is received within the hollow tube 46 of the reaction chamber 32. The susceptor 58 is configured to receive the substrate 54 from the load lock housing such that the substrate 54 is positioned at the center of the upper surface of the susceptor 58. The shaft 60 of the susceptor 58 is operably connected to a motor (not shown) that selectively rotates the shaft 60 and the susceptor 58. Rotation of the susceptor 58 results in corresponding rotation of the substrate 54 supported thereon.

[0039] During operation, the substrate 54 is transferred onto the susceptor 58 within the reaction space 48 of the reaction chamber 32. Once the substrate 54 is securely positioned on the susceptor 58, a motor (not shown) rotates the susceptor 58 and the substrate 54 within the reaction chamber 32. As the substrate 54 rotates, reactant gas is introduced into the reaction space 48 by the inlet manifold 34. The reactant gas flows substantially linearly from the inlet manifold 34, across the upper surface of the substrate 54, through the outlet manifold 36, and out through the outlet port 56. The flow of reactant gas within the reaction chamber 32 is indicated by arrow B in FIG. 1. Although this description relates to the deposition of thin films on a substrate, those skilled in the art should understand that the distribution of gas on the surface of the substrate in other processes, such as etching, annealing, doping, oxidation, or any other process, may also be desirable. The process chambers disclosed in FIGS. 2-7B can be used in the system disclosed in FIG. 1, as well as in the system disclosed in U.S. Patent No. 8,067,061, which is hereby incorporated by reference in its entirety and for all purposes.

[0040] FIG. 2 shows a perspective view of a curved process chamber 132 according to various embodiments. The curved process chamber 132 can include a curved upper wall 101 that extends longitudinally from a first end 102 of the reaction chamber to a second end 103 of the process chamber 132. The curved process chamber can include a curved lower wall 104 that, in cooperation with the curved upper wall 101, at least partially defines an internal cavity 105 that can function as a reaction space 48, and the curved lower wall 104 is connected to the curved upper wall 101, for example, in some embodiments, via connectors disposed along an interface between the walls. In some embodiments, the curved lower wall 104 can be directly connected (e.g., without connectors) to the curved upper wall 101 from the first end 102 to the second end 103 along a first interface 106 at a first side 107 of the reaction chamber and along a second interface 108 at a second side 109 of the process chamber 132. Thus, in various embodiments, the upper wall 101 and the lower wall 104 can be directly connected to each other along the interfaces 106, 108 without connectors therebetween. In other embodiments, the upper wall 101 and the lower wall 104 can be connected to each other along the interfaces 106, 108 by intervening connectors. The curved upper wall 101 can have substantially the same thickness as the curved lower wall 104 at the first interface 106 and the second interface 108.

[0041] In some embodiments, the curved lower wall 104 can be mechanically connected to the curved upper wall 101 via a connector. In some embodiments, the connector can comprise an E-shaped connector. In some embodiments, the curved upper wall 101 and the curved lower wall 104 can have a circular, elliptical, or polynomial shape. In some embodiments, the curved upper wall 101 and the curved lower wall 104 can include a substantially uniform thickness. In some embodiments, the rail can extend along the outer surface of the process chamber 132 from the first end 102 to the second end 103, and the rail can be disposed at or near the connection between the curved upper wall 101 and the curved lower wall 104. In some embodiments where the rail meets the curved upper wall 101 and the curved lower wall 104, the thickness of the rail is substantially the same as the curved upper wall 101 and the curved lower wall 104, creating a better weld. In some embodiments, the curved lower wall 104 can be mechanically connected to the curved upper wall 101 with a connector. In some embodiments, the curved lower wall 104 and the curved upper wall 101 can be welded together. In some embodiments, the process chamber 132 is made of a material that is substantially transparent to radiant energy, such as quartz.

[0042] The radii of curvature of the curved upper wall 101 and the curved lower wall 104 can be relatively small in order to achieve appropriate structural integrity while improving manufacturability. As described above, the flat shape can also improve the gas flow, and thus, a small radius of curvature can improve the gas flow and, as a result, improve the uniformity of deposition.

[0043] As shown in FIG. 2, two flanges (e.g., a front flange 110 and a rear flange 111) can be configured to mate with the input manifold 34 and the output manifold 36, respectively. (See FIG. 1). The flanges 110, 111 can contact the curved upper wall 101 and the curved lower wall 104 at the first end 102 and the second end 103.

[0044] Figures 3A - 3E show various views of the curved process chamber 132 of FIG. 2 having rib support structures 115A, 115B. The embodiments of FIGS. 3A - 3E share all the features of the embodiment of FIG. 2, and these features are not described again in relation to FIGS. 3A - 3E. FIGS. 3A - 3E show a first plurality of first rib support structures 115A disposed on the curved upper wall 101 and the curved lower wall 104 only in a portion of the curved upper wall 101 and the curved lower wall 104 near the connection between the curved upper wall 101 and the curved lower wall 104 (e.g., near interface 106). A plurality of second rib support structures 115B may be disposed on the curved upper wall 101 and the curved lower wall 104 only in a portion of the curved upper wall 101 and the curved lower wall 104 near the connection between the curved upper wall 101 and the curved lower wall 104 (e.g., near interface 108). The first rib support structure 115A may be disposed on the first side surface 107 of the chamber 132, and the second rib support structure 115B may be disposed on the second side surface 109 of the chamber 132 opposite the first side surface 107.

[0045] In some embodiments, the rib support structures 115A, 115B can be welded directly to at least one of the curved upper wall 101, the curved lower wall 104, and the connectors (e.g., along interfaces 106, 108). In some embodiments, the rib support structures 115A, 115B do not overlap with the top and bottom of the process chamber 132 and thus do not provide non - uniform heating. The plurality of rib support structures 115A, 115B can be evenly spaced across the curved upper wall 101 and the curved lower wall 104. The plurality of rib support structures can include a first plurality of first rib support structures 115A and a second plurality of rib support structures 115B disposed on opposing surfaces that run along the connectors or interfaces 106, 108.

[0046] In some embodiments, the reaction chamber 132 can include a first rib support structure 115A disposed on a first side 107 of the reaction chamber 132 across the connector or interface 108, the first rib support structure 115A having a first curved top 112 fixed to the curved outer surface of the curved upper wall 101 and a first curved bottom 113 fixed to the curved outer surface of the curved lower wall 104. The reaction chamber 132 can further include a second rib support structure 115B disposed on a second side 109 of the reaction chamber 132 across the opposite connector, the second rib support structure 115B having a second curved top 112 fixed to the curved upper wall 101 and a second curved bottom 113 fixed to the curved lower wall 104. Thus, the reaction chamber 132 can include a plurality of first rib support structures 115a disposed on the first side 107 of the reaction chamber 132 and longitudinally spaced from each other, each first rib support structure 115A of the plurality of first rib support structures having a first curved top 112 fixed to the curved outer surface of the curved upper wall 101 and a first curved bottom 113 fixed to the curved outer surface of the curved lower wall 103. Thus, the reaction chamber 132 can also include a plurality of second rib support structures 115B disposed on the second side 109 of the reaction chamber 132 and longitudinally spaced from each other, each second rib support structure 115B of the plurality of second rib support structures having a second curved top 112 fixed to the curved outer surface of the curved upper wall 101 and a second curved bottom 113 fixed to the curved outer surface of the curved lower wall 104.

[0047] The rib support structures 115A, 115B can not only provide structural support to the process chamber 132 but also function as cooling fins. Those skilled in the art will understand that the minimum number of rib support structures can be used to provide adequate structural support to improve manufacturability.

[0048] FIG. 3D shows a cross-sectional view of a process chamber showing a horizontal shelf 114 disposed within an internal cavity 105 and configured to support a substrate 54 such as a semiconductor wafer. FIG. 3E shows a front cross-sectional view of a process chamber 132 showing a section where the shelf 114 runs completely across and is joined at first and second connection portions or interfaces 106, 108 between a curved upper wall 101 and a curved lower wall 104. In FIG. 3D, the shelf 114 is shown as including a first portion at a rear second end 103 of the reaction chamber 132, although of course the shelf 114 can include a second portion at a front first end 102 of the reaction chamber 132. Thus, in some embodiments, the first and second portions of the horizontal shelf 114 can be positioned as mirror images of each other such that the wafer enters a central portion of the chamber 132. In various embodiments, the shelf 114 may be symmetric with respect to the reaction chamber 132, for example, symmetric with respect to the longitudinal axis of the reaction chamber 132.

[0049] Figures 4A-4C show various views of the curved process chamber of FIG. 2 having a rib support structure attached to rails 116 that run along connections or interfaces 106, 108 between upper wall 101 and lower wall 104. The embodiments of FIGS. 4A-4C share many features of the embodiments of FIGS. 2 and 3, and the features of FIGS. 4A-4C are not described again here. Rails 116 can be attached to a plurality of rib support structures 115A, 115B, extend along at least one of first interface 106 and second interface 108, and may be mechanically fixed. Rails 116 can be directly connected to at least one of curved upper wall 101, curved lower wall 104, and the connector between upper wall 101 and lower wall 104. In some embodiments, rails 116 can be welded to at least one of curved upper wall 101, curved lower wall 104, or the connector. The plurality of rib support structures 115A, 115B can include a plurality of top rib support structures 115' located at the top of elongated rail 116 and a plurality of bottom rib support structures 115'' located at the bottom of rail 116. In some embodiments, the connectors along interfaces 106, 108, or opposing connectors can have an attendant rail 116 connected to their own plurality of rib support structures. In some embodiments, on one side of reaction chamber 132, the connector can have a plurality of rib support structures 115A or 115B without a rail directly connected to at least one of curved upper wall 101 and curved lower wall 104, while the other side can have a rail 116 connected to the plurality of rib support structures 115A or 115B.

[0050] In some embodiments, the first rail 116A may extend along and be mechanically fixed to the outer surface of the reaction chamber 132 outside the internal cavity 105 near the connection or interface 106 between the upper wall 101 and the lower wall 104. The first curved top 115’ of each first rib support structure 115A may be disposed above the first rail 116, and the first curved bottom 115’’ of each first rib support structure 115A may be disposed below the first rail 116A. The first curved top 115’ and the first curved bottom 115’’ may be integrally formed in some embodiments. The first curved top 115’ may comprise a curved surface shaped to conform to the outer surface of the curved upper wall 101, and the first curved bottom 115’’ may comprise a curved surface shaped to conform to the outer surface of the curved lower wall 104. The first curved top 115’ and the first curved bottom 115’’ may cooperate to define a generally C-shaped contour. The rail and rib structures may be disposed on opposite sides of the reaction chamber 132 as shown herein.

[0051] Figures 5A-5C show various views of an example of a curved process chamber 132 that includes a rail 116 but no rib support structures, showing the placement of the rail 116 relative to the curved upper wall 101 and the curved lower wall 104. Thus, in some arrangements, the curved process chamber 132 may include rails on opposite sides of a ribless process chamber 132.

[0052] Figures 6A and 6B show cross-sectional views of an example of a curved process chamber 132 including vertical sidewalls 117A, 117B. Figures 6A and 6B share the structural features of FIG. 3E, and these features are not repeated. However, the exemplary curved process chamber 132 of FIGS. 6A and 6B also includes substantially flat vertical sidewalls 117A, 117B at the ends of the curved upper wall 102 and the curved lower wall 104. As shown, the two end sections of the shelf 114 can be connected to the sides of the vertical sidewalls 117A, 117B. The shelf 114 may be connected to the vertical sidewalls at the middle or central portion of the vertical sidewalls 117A, 117B, or at a section of the vertical sidewalls 117A, 117B that is not the middle or central portion.

[0053] The curved process chambers 132 of FIGS. 6A and 6B may be connected by a joint or connector with vertical sidewalls 17A, 17B. The vertical sidewalls 17A, 17B may extend linearly between the curved upper wall 101 and the curved lower wall 104. The vertical sidewalls 17A, 17B can be welded to the ends of the curved upper wall 101 and the curved lower wall 104. The curved process chamber 132 of FIG. 6A shows a mounting without a side rib structure or rails. In some embodiments, the curved process chamber 132 may include one or more side rib structures 115A, 115B as shown in FIG. 6B. These side rib structures 115A, 115B may be held together or connected to one or more rails 116A, 116B as shown in FIG. 6B. In some embodiments, the rails may be omitted as shown in the process chambers shown in FIGS. 3A - 3E.

[0054] Figures 7A and 7B show cross-sectional views of multiple examples of the curved process chamber 132. These examples can be implemented in all of the examples described above. In Figure 7A, the curved process chamber 132 includes a separate shelf 114, a separate curved upper wall 101, and a curved lower wall 104. The curved upper wall 101 and the curved lower wall 104 can be welded together to form an internal cavity 105. The curved upper wall 101 and the curved lower wall 104 meet to form a C-shaped contour. The shelf 114 can be welded to the curved upper wall 101 and the curved lower wall 104 where the curved upper wall 101 and the curved lower wall 104 meet.

[0055] Figure 7B shows the curved process chamber 132 including the shelf 114, the curved upper wall 101, the curved lower wall 104, and E-shaped connectors 118A, 118B disposed between and connected to the upper wall 101 and the lower wall 104. Thus, the curved upper wall 101 can be connected to the curved lower wall 104 via the E-shaped connectors 118A, 118B. The E-shaped connectors 118A, 118B can be connected to the ends of the walls 101, 104 in any suitable manner, for example, by welding. The E-shaped connectors 118A, 118B can also be connected to the shelf 114, for example, by welding.

[0056] In some embodiments, the curved upper wall 101 extends longitudinally from a first end 102 of the reactor chamber 132 to a second end 103 of the reaction chamber 132. The curved lower wall 104 can cooperate with the curved upper wall 101 to at least partially define an internal cavity 105. The upper end of the curved lower wall 101 can be connected at the first side 107 of the reaction chamber 132 and the second side 109 of the reaction chamber 132 to the lower end of the curved upper wall 101 extending from the first end 102 to the second end 103 by a joint (e.g., by direct bonding or welding, or by an intervening connector). The first maximum thickness of the joint can be within 20% of the second maximum thickness of at least one of the lower end of the curved upper wall 101 and the upper end of the curved lower wall 104. In various embodiments, the first maximum thickness of the joint can be within 10% or within 5% of the second maximum thickness of at least one of the lower end of the curved upper wall 101 and the upper end of the curved lower wall 104.

[0057] In some embodiments, the joint includes E-shaped connectors 118A, 118B welded to the curved upper wall 101 and lower wall 104. In some embodiments, the E-shaped connectors 118A, 118B or the joint includes a linear or curved base having three mechanical connection points extending from the first end, the second end, and the inner portion of the base. The E-shaped connectors 118A, 118B may comprise a top, a bottom, and an intermediate portion between the top and the bottom. For example, as shown in the E-shaped connectors 118A, 118B of FIG. 7B, the first connection point 119A of the connectors 118A, 118B can be connected (e.g., welded) to the lower end of the upper wall 101. The second connection point 119B can be connected (e.g., welded) to the lateral side edge of the shelf 114. The third connection point 119C can be connected (e.g., welded) to the upper end of the lower wall 104. In other embodiments, the joint includes a welded connection between the curved upper wall and the curved lower wall, such that there may be no separate intervening connector therebetween. The first maximum thickness of the joint (e.g., the maximum thickness of the E-shaped connectors 118A, 118B, or other connectors, or the maximum thickness of the direct welded joint) may be substantially the same as the second maximum thickness of the ends of the upper wall or lower wall 101, 104. In some embodiments, the joint includes vertical sidewalls 117A, 117B extending linearly between the upper and lower ends of the walls 101, 104, and the vertical sidewalls may be welded at the upper and lower ends. In some embodiments, the first plurality of first rib support structures 115A, 115B may be disposed at or near the joint, along only a portion of the curved upper wall 101, and along only a portion of the curved lower wall 104.

[0058] In the above embodiments, an apparatus, system, and method for reinforcing a curved process chamber having side ribs are described in relation to specific embodiments. However, it should be understood that the principles and advantages of the embodiments can be used in any other system, apparatus, or method.

[0059] Although described in detail above by way of illustration and example for purposes of clarity and understanding, it will be apparent to those skilled in the art that certain changes and modifications can be made. Accordingly, the description and examples are not to be construed as limiting the scope of the invention to the particular embodiments and examples described herein, but rather should include all modifications and alternatives that fall within the true scope and spirit of the invention. Further, not all of the features, aspects and advantages described above in this specification are necessarily required for practicing the invention.

[0060] Unless the context clearly requires otherwise, throughout the description and claims of this application, the terms "comprise", "comprising", "include", "including", and the like are to be construed in an inclusive sense, i.e., in the sense of "including, but not limited to". As used generally herein, the terms "coupled" or "connected" refer to two or more elements that can be directly coupled or can be coupled through one or more intermediate elements. Further, as used in this application, the terms "herein", "above", "below", and similar terms are intended to refer to the entire application rather than to any particular part of the application. Where the context permits, words in the detailed description using the singular or plural number may also include the plural or singular number respectively. The word "or" when referring to a list of two or more items is intended to cover all of the following interpretations: any of the items in the list, all of the items in the list, and any combination of the items in the list. All numerical values provided herein are intended to include similar values within the measurement error.

[0061] Furthermore, conditional language, such as “can,” “could,” “might,” “may,” “e.g.,” “for example,” “such as,” etc., used herein is generally intended to convey that a particular embodiment includes a particular feature, element, and / or state, unless otherwise specified or understood within the context in which it is used, while other embodiments do not.

[0062] The teachings of the embodiments provided herein can be applied to other systems, not necessarily the systems described above. Additional embodiments can be provided by combining the elements and operations of the various embodiments described above. The operations of the methods discussed herein can be performed in any order as needed. Furthermore, the operations of the methods discussed herein can be performed continuously or in parallel as needed.

[0063] Although specific embodiments of the invention have been described, these embodiments are presented by way of example only and are not intended to limit the scope of the disclosure. In fact, the novel methods and systems described herein may be embodied in a variety of other forms. Additionally, various omissions, substitutions, and changes in the form of the methods and systems described herein may be made without departing from the spirit of the disclosure. The appended claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosure. Accordingly, the scope of the invention is defined by reference to the claims.

Claims

**Claim 1** A process chamber, a curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, wherein an upper end of the curved lower wall is connected by a joint to a lower end of the curved upper wall at a first side of the reaction chamber and at a second side of the reaction chamber from the first end to the second end, the curved lower wall; a rail extending along an outer surface of the process chamber from the first end to the second end, the rail being disposed at or near a connection between the curved upper wall and the curved lower wall; and the joint includes a vertical side wall extending linearly between the upper end and the lower end, the process chamber. **Claim 2** A process chamber, a curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, the curved lower wall being connected to the curved upper wall from the first end to the second end at a first side of the reaction chamber and at a second side of the reaction chamber; and a first plurality of first rib support structures disposed along only a portion of the curved upper wall, excluding a top of the curved upper wall, at or near a connection between the curved upper wall and the curved lower wall, and along only a portion of the curved lower wall, excluding a bottom of the curved lower wall, at or near a connection between the curved upper wall and the curved lower wall; a process chamber comprising. **Claim 3** The process chamber according to any one of claims 1 to 2, wherein at least one of the curved upper wall and the curved lower wall has a circular, elliptical, or polynomial shape. **Claim 4** The process chamber according to any one of claims 1 to 3, wherein at least one of the curved upper wall and the curved lower wall has a substantially uniform thickness. **Claim 5** The process chamber according to any one of claims 1 to 4, wherein the curved upper wall and the curved lower wall are welded together. **Claim 6** The process chamber according to any one of claims 1 to 5, wherein the curved upper wall and the curved lower wall are connected via a connector. **Claim 7** The process chamber according to claim 6, wherein the connector is E-shaped.

8. The process chamber according to claim 7, wherein the connector includes a top portion, a bottom portion, and an intermediate portion.

9. The process chamber according to claim 8, wherein the intermediate portion is connected to a horizontal shelf.

10. The process chamber according to claim 2, wherein the curved upper wall and the curved lower wall are connected via a connector, and the connector is curved.

11. The process chamber according to any one of claims 1 to 10, wherein the process chamber is made of a material substantially transparent to radiation energy.

12. The process chamber according to claim 11, wherein the process chamber is made of quartz.

13. The process chamber according to any one of claims 1 to 12, wherein side ribs are directly welded to the curved upper wall and the curved lower wall.

14. The process chamber according to any one of claims 1 to 13, wherein a plurality of side ribs do not contact the curved top wall and the curved bottom wall.

15. The process chamber according to any one of claims 1 to 14, further comprising at least one flange in contact with the curved upper wall and the curved lower wall at the first end and the second end.

16. The process chamber according to claim 15, wherein the at least one flange is configured to connect to an input manifold or an output manifold.

17. The process chamber according to claim 15, wherein the at least one flange includes a first flange configured to connect to an input manifold and a second flange configured to connect to an output manifold.

18. The process chamber according to any one of claims 1 to 17, further comprising at least one rail connected to a plurality of side ribs.

19. The process chamber according to claim 18, wherein the at least one rail extends along a first interface or a second interface.

20. The process chamber according to claim 18, wherein the at least one rail is connected to at least one of the curved upper wall and the curved lower wall.

21. The process chamber according to claim 20, wherein at least one of the at least one rail is welded to at least one of the curved upper wall and the curved lower wall.

22. The process chamber according to claim 18, wherein the plurality of side ribs include a plurality of top rib support structures disposed at a top of the at least one rail and a plurality of bottom rib support structures disposed at a bottom of the rail.

23. The process chamber according to claim 18, wherein the at least one rail includes a first rail and a second rail, and the plurality of rib support structures include a first plurality of rib support structures connected to the first rail and a second plurality of rib support structures connected to the second rail.

24. The process chamber according to any one of claims 1 to 23, wherein the plurality of rib support structures are evenly spaced across a first interface or a second interface.

25. The process chamber according to any one of claims 1 to 24, wherein the plurality of rib support structures include a first plurality of side rib support structures disposed on a first interface and a second plurality of rib support structures disposed on a second interface.

26. A reaction chamber, A curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, A curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, the curved lower wall being connected to the curved upper wall from the first end to the second end on a first side of the reaction chamber and on a second side of the reaction chamber, A first rib support structure disposed on the first side of the reaction chamber at or near a connection between the curved upper wall and the curved lower wall, the first rib support structure having a first curved top fixed to a curved outer surface of the curved upper wall along only a portion of the curved upper wall excluding a top of the curved upper wall and a first curved bottom fixed to a curved outer surface of the curved lower wall along only a portion of the curved lower wall excluding a bottom of the curved lower wall.

27. The reaction chamber according to claim 26, wherein the curved lower wall is mechanically connected to the curved upper wall by an intervening connector.

28. The reaction chamber according to claim 27, wherein the intervening connector is an E-shaped connector.

29. The reaction chamber according to claim 26, further comprising a second rib support structure disposed on the second side surface of the reaction chamber across the second interface, the second rib support structure having a second curved top fixed to the curved upper wall and a second curved bottom fixed to the curved lower wall.

30. The reaction chamber according to claim 26, further comprising a plurality of first rib support structures disposed on the first side surface of the reaction chamber and longitudinally spaced from each other, each first rib support structure having a first curved top fixed to the curved outer surface of the curved upper wall and a first curved bottom fixed to the curved outer surface of the curved lower wall.

31. The reaction chamber according to claim 30, further comprising a plurality of second rib support structures disposed on the second side surface of the reaction chamber and longitudinally spaced from each other, each second rib support structure having a second curved top fixed to the curved outer surface of the curved upper wall and a second curved bottom fixed to the curved outer surface of the curved lower wall.

32. The reaction chamber according to claim 30, further comprising a first rail extending along the first interface and mechanically fixed on the outer surface of the reaction chamber outside the internal cavity.

33. The reaction chamber according to claim 32, wherein the first curved top of each first rib support structure is disposed above the first rail, and the first curved bottom of each first rib support structure is disposed below the first rail.

34. The reaction chamber according to claim 33, wherein the first curved top of each first rib support structure is welded to the upper surface of the first rail, and the first curved bottom of each first rib support structure is welded to the lower surface of the first rail.

35. The reaction chamber according to claim 26, wherein the first curved top and the first curved bottom are integrally formed.

36. The reaction chamber according to claim 26, wherein the first curved top portion comprises a curved surface shaped to conform to the outer surface of the curved upper wall, and the first curved bottom portion comprises a curved surface shaped to conform to the outer surface of the curved lower wall.

37. The reaction chamber according to claim 36, wherein the first curved top portion and the first curved bottom portion cooperate to define a generally C-shaped contour.

38. The reaction chamber according to claim 26, wherein the curved upper wall is welded to the curved lower wall.

39. The reaction chamber according to claim 26, wherein the curved upper wall and the curved lower wall comprise quartz.

40. The reaction chamber according to claim 26, further comprising a horizontal shelf disposed within the internal cavity and configured to support a substrate.

41. A process chamber, a curved upper wall extending longitudinally from a first end of the reaction chamber to a second end of the reaction chamber, and a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, wherein an upper end of the curved lower wall is connected by a joint to a lower end of the curved upper wall at a first side of the reaction chamber and at a second side of the reaction chamber from the first end to the second end, the curved lower wall and, wherein a first maximum thickness of the joint is within 20% of a second maximum thickness of at least one of the lower end of the curved upper wall and the upper end of the curved lower wall, the joint includes a vertical side wall extending linearly between the upper end and the lower end, the process chamber.

42. The process chamber according to claim 41, wherein the joint comprises an E-shaped connector welded to the curved upper wall and the lower wall.

43. The process chamber according to claim 41, wherein the joint comprises a linear base having three mechanical connection points extending from a first end, a second end, and an inner portion of the base.

44. The process chamber according to claim 41, wherein the joint includes a welded connection between the curved upper wall and the curved lower wall.

45. The process chamber according to claim 41, wherein the first maximum thickness is substantially the same as the second maximum thickness.

46. The process chamber according to claim 41, wherein the vertical side wall is welded to the upper end and the lower end.

47. The process chamber according to claim 41, further comprising a first plurality of first rib support structures disposed along only a part of the curved upper wall and only a part of the curved lower wall at or near the joint portion.

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