Composite plasma source system and separated remote plasma equipment

Abstract

The present application discloses a combined plasma source system and a separate remote plasma device, and the combined plasma source system includes a power supply device, a plasma device, a first separate plasma device, and a power distribution device. The power supply device is used to supply operating power. The first separate plasma device is connected to the plasma device. The power distribution device is used to realize at least one of the following functions: a function of supplying a first operating power to the plasma device based on the operating power to cause the plasma device to perform a first plasma process; and a function of forming a first separate remote plasma system with the power supply device and the first separate plasma device to supply a second operating power to the first separate plasma device based on the operating power to perform a second plasma process on the plasma device. By sharing the power supply, the power supply and the matching device adapted to the demand can be flexibly arranged, and the practicality can be improved while reducing the use of the power supply.

Description

Technical Field

[0001] (Cross - reference to related applications) This application claims the priority of a Chinese patent application filed with the Chinese Patent Office on June 16, 2022, with the application number 202210688694.7 and the invention title "Composite Plasma Source System and Separated Remote Plasma Equipment", and incorporates all of its contents herein by reference.

[0002] This application relates to the technical field of plasma, and particularly to a composite plasma source system and a separated remote plasma device.

Background Art

[0003] In the manufacture of electronic devices such as semiconductor devices, it is usually necessary to perform different processes on the workpiece, such as plasma processing, for example, etching, deposition, implantation, exhaust gas treatment, etc. In such plasma processing, it is common to use a remote plasma device in combination.

[0004] Currently, a remote plasma device usually includes a chamber body and a power supply. The chamber body provides an internal space as a chamber, and the power supply supplies power to the load in the remote plasma device. In a remote plasma device, the gas supplied into the chamber is converted into plasma through a plasma - forming process, for example, by passing electricity through electrodes, coils, etc. in the remote plasma device to generate a corresponding magnetic field, and then transported into another device chamber to perform a corresponding plasma process, the previous process, or the subsequent process.

[0005] However, remote plasma equipment is an integrated device with a built-in power supply and requires a relatively large internal space within the device. Also, since it is an integrated device with a built-in power supply, better safety design is required for remote plasma equipment. Furthermore, originally, the plasma system and remote plasma equipment each require an individual power supply. Therefore, in order to meet the power supply conditions, more power supplies need to be arranged at the locations where the system and the equipment operate. Also, once such remote plasma equipment is designed, the design of each functional module becomes fixed, making it difficult to adapt to different application scenarios and resulting in low practicality.

Summary of the Invention

Problems to be Solved by the Invention

[0006] An object of the present invention is to provide a composite plasma source system and a separable remote plasma device that reduce the power supply arrangement by sharing the power supply and improve the practicality of the system through a flexible arrangement of the power supply and the separable device.

Means for Solving the Problems

[0007] To achieve the above object, in a first aspect, the present application provides a composite plasma source system including a power supply device, a plasma device, a first separable plasma device, and a power distribution device. The power supply device is used to supply operating power. The first separable plasma device is connected to the plasma device. The power distribution device is electrically connected to the power supply device, the plasma device, and the first separable plasma device respectively. The power distribution device is used to realize at least one of the following functions: supplying first operating power to the plasma device based on the operating power to cause the plasma device to execute a first plasma process; forming a first separable remote plasma system with the power supply device and the first separable plasma device and supplying second operating power to the first separable plasma device based on the operating power to cause the plasma device to execute a second plasma process.

[0008] In one embodiment, the power distribution device includes a circuit switch. The circuit switch is used to electrically connect the power supply device to the plasma device to supply the first operating power to the plasma device, or to electrically connect the power supply device to the first separate plasma device to supply the second operating power to the first separate plasma device.

[0009] In one embodiment, the circuit switch includes an input node, a first output node, and a second output node, and the circuit switch is used to conduct between the input node and the first output node, or to conduct between the input node and the second output node. The plasma device includes a first matching network and a first chamber body. The first matching network is connected between the load of the first chamber body and the first output node and is used to match the impedance between the power supply device and the load of the first chamber body. The first separate plasma device includes a second chamber body and a second matching network. The second chamber body communicates with the first chamber body. The second matching network is connected between the load of the second chamber body and the second output node and is used to match the impedance between the power supply device and the load of the second chamber body.

[0010] In one embodiment, the composite plasma source system further includes a first controller electrically connected to the circuit switch. The first controller is used to control the circuit switching of the circuit switch to establish the electrical connection between the power supply device and the plasma device, or the electrical connection between the power supply device and the first separate plasma device.

[0011] In one embodiment, the hybrid plasma source system further includes a second controller electrically connected to the circuit switcher and the power supply device respectively. The second controller is used to control the circuit switcher to communicate the power supply device with the plasma device in the first mode to cause the plasma device to execute a first plasma process, and to control the power supply device to output a first operating power to the plasma device. Also, in the second mode, to execute a second plasma process on the plasma device, the second controller is used to control the circuit switcher to communicate the power supply device with the first separate plasma device, and to control the power supply device to output a second operating power to the first separate plasma device.

[0012] In one embodiment, the hybrid plasma source system further includes a second separate plasma device, which is connected to the plasma device and electrically connected to the circuit switcher. The circuit switcher further has a function of electrically connecting the power supply device to the plasma device to supply a first operating power to the plasma device, a function of electrically connecting the power supply device to the first separate plasma device to supply a second operating power to the first separate plasma device and execute a second plasma process on the plasma device, and a function of electrically connecting the power supply device to the second separate plasma device to supply a third operating power to the second separate plasma device based on the operating power, and forming a second separate remote plasma system with the power supply device and the second separate plasma device to execute a third plasma process on the plasma device. The circuit switcher is used to realize one or two of these functions.

[0013] In one embodiment, the power distribution device includes a power distributor, which is used to realize at least one of the functions of supplying a first operating power to the plasma device by distributing a first portion of the operating power to the plasma device and supplying a second operating power to the first separate plasma device by distributing a second portion of the operating power to the first separate plasma device.

[0014] In one embodiment, the composite plasma source system further includes a third controller electrically connected to the power distributor. The third controller is used to control the power distribution of the power distributor to implement at least one of the functions of distributing the power of the first part of the operating power to the plasma device and distributing the power of the second part of the operating power to the first separated plasma device.

[0015] In one embodiment, the composite plasma source system further includes a fourth controller electrically connected to the power distributor and the power supply device respectively. The fourth controller is used to control the power distributor to output the power of the first part to the plasma device in the first mode and control the power supply device to output the operating power to the power distributor in order to execute the first plasma process on the plasma device, and is used to control the power distributor to output the power of the second part to the first separated plasma device in the second mode and control the power supply device to output the operating power to the power distributor in order to execute the second plasma process on the plasma device, and is used to control the power distributor to output the power of the first part to the plasma device, control the power distributor to output the power of the second part to the first separated plasma device, and control the power supply device to output the operating power to the power distributor in the third mode in order to execute the third plasma process on the plasma device and the first separated plasma device.

[0016] In one embodiment, the hybrid plasma source system further includes a second separate plasma device, and the second separate plasma device is connected to the plasma equipment and electrically connected to the power distributor. The power distributor further functions to supply the first operating power to the plasma equipment by distributing the first portion of the operating power to the plasma equipment, supply the second operating power to the first separate plasma device by distributing the second portion of the operating power to the first separate plasma device, and form a second separate remote plasma system with the power supply device and the second separate plasma device to supply the third operating power to the second separate plasma device by distributing the third portion of the operating power to the second separate plasma device for performing a third plasma process on the plasma equipment, and is used to realize at least one of the functions.

[0017] In one embodiment, the first operating power and the second operating power include the same power parameters, or different power parameters, or partially the same power parameters.

[0018] In one embodiment, the power parameters include at least one of voltage, current, phase, frequency, and power.

[0019] In one embodiment, the hybrid plasma source system further includes a fifth controller electrically connected to the power supply device. The fifth controller is used to control the power supply device to output power according to the power parameters so as to supply at least one of the first operating power and the second operating power.

[0020] In one embodiment, the plasma device includes an intake assembly, and the intake assembly includes a first pipeline, a second pipeline, a third pipeline, and a pipeline switch. The first pipeline is used to introduce a processing gas. The second pipeline is connected to the first separated plasma device, and the second pipeline is used to introduce a processing or cleaning gas supplied by the first separated plasma device. The third pipeline is connected to the first chamber body in the plasma device. The pipeline switch is provided at the junction of the first pipeline and the second pipeline and the third pipeline, and the pipeline switch is used to connect the first pipeline and the third pipeline or to connect the second pipeline and the third pipeline.

[0021] In one embodiment, the composite plasma source system further includes a sixth controller electrically connected to the pipeline switch. The sixth controller is used to control the pipeline switch to connect the first pipeline and the third pipeline in the first mode, and is used to control the pipeline switch to connect the second pipeline and the third pipeline in the second mode.

[0022] In one embodiment, the plasma device includes an exhaust member, and the exhaust member includes a gas suction assembly used to introduce the exhaust gas discharged from the plasma device and a first exhaust pipeline. The first exhaust pipeline communicates with the gas suction assembly and the intake pipeline of the first separated plasma device respectively, and the intake pipeline of the first separated plasma device communicates with the second chamber body of the first separated plasma device.

[0023] In one embodiment, the second separated plasma device includes a third matching network and a third chamber body. The plasma device includes a first intake pipeline and a second exhaust pipeline. The first intake pipeline communicates with the intake pipeline of the first separated plasma device, and is used for the plasma device to introduce a processing or cleaning gas supplied by the first separated plasma device. The second exhaust pipeline communicates with the third chamber body, and is used for the plasma device to discharge the exhaust gas of the plasma device to the second separated plasma device.

[0024] In one embodiment, the plasma device includes a second intake pipeline and a third exhaust pipeline, each connected to a first separable plasma device. The second intake pipeline is used to introduce a processing or cleaning gas supplied by the first separable plasma device. The third exhaust pipeline communicates with the second chamber body of the first separable plasma device, and the third exhaust pipeline is used to discharge the exhaust gas of the plasma device to the first separable plasma device to perform exhaust gas treatment on the first separable plasma device.

[0025] In one embodiment, the composite plasma source system further includes a seventh controller electrically connected to the first separable plasma device. The seventh controller is used to control the first separable plasma device to supply a processing or cleaning gas, or to control the first separable plasma device to perform exhaust gas treatment.

[0026] In a second aspect, the present application provides a separable remote plasma device including a power supply device and a separable plasma device. The power supply device supplies operating power. The separable plasma device is electrically connected to the power supply device, and the separable plasma device includes a matching network and a chamber body. The matching network is connected to the power supply device and the load of the chamber body respectively, and is used to match the impedances of the power supply device and the load of the chamber body.

[0027] In one embodiment, the adjustable power parameter of the operating power includes at least one of voltage, current, phase, frequency, and power.

[0028] In one embodiment, the separable remote plasma device further includes a controller, which is connected to the power supply device and is used to control the power supply device to output power according to the power parameter.

[0029] In one embodiment, the separated remote plasma device further includes a first intake pipeline and a first exhaust pipeline, each connected to the chamber body. The first intake pipeline is used to introduce the source gas, and the first exhaust pipeline is used to send the source gas, which has undergone plasma treatment or cleaning, to the plasma device as a processing or cleaning gas.

[0030] In one embodiment, the separated remote plasma device further includes a second intake pipeline, a third intake pipeline, and a second exhaust pipeline, each connected to the chamber body. The second intake pipeline is used to introduce the exhaust gas sent from the plasma device. The third intake pipeline is used to introduce the source gas for performing plasma treatment on the exhaust gas. The second exhaust pipeline is used to discharge the exhaust gas after being processed by the plasma treatment.

[0031] (Beneficial effects) The beneficial effects of the present application are as follows. The present application provides a composite plasma source system including a power supply device, a plasma device, a first separable plasma device, and a power distribution device. When it is necessary to execute a first plasma process on the plasma device, the power distribution device can supply a first operating power to the plasma device. When it is necessary to execute a second plasma operation on the plasma device, the power distribution device can supply a second operating power to the first separable plasma device. When it is necessary to execute a first plasma process on the plasma device and a second plasma operation on the plasma device, the power distribution device can supply the first operating power and the second operating power simultaneously. Therefore, by providing the power distribution device, the plasma device and the first separable plasma device can share one power supply device. Further, even if the plasma device or the first separable plasma device is added, the same power supply device can still be shared in the same way. On the one hand, since the power supply device can be shared, there is no need to add an additional power supply device, and the purpose of reducing the power supply arrangement can be achieved. On the other hand, when it is necessary to apply to different application scenarios, by simply adding the plasma device or the first separable plasma device while sharing one power supply device, it can be adapted to different application scenarios, and the realization process is simple and highly practical. Also, the power supply device and the first separable plasma device are two independent devices. That is, since no power supply is provided for the first separable plasma device, the volume of the first separable plasma device can be reduced. Also, by relaxing the safety design requirements of the first separable plasma device, the design difficulty can also be reduced.

[0032] One or more embodiments are exemplarily shown by the corresponding accompanying drawings. These exemplary descriptions do not constitute a limitation on the embodiments. Elements having the same reference numerals in the accompanying drawings are the same elements. Unless otherwise specified, the images in the drawings do not constitute a limitation on the proportion.

Brief Description of the Drawings

[0033]

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Embodiments for Carrying Out the Invention

[0034] In order to more clearly illustrate the object, technical solution and advantages of the present application, hereinafter, in combination with the accompanying drawings in the embodiments of the present application, the technical solution in the embodiments of the present application will be clearly and completely described. It is obvious that the described embodiments are only some embodiments of the present application, not all embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor shall fall within the protection scope of the present application.

[0035] Referring to FIG. 1, FIG. 1 is a schematic configuration diagram of a composite plasma source system provided according to an embodiment of the present application. The composite plasma source system 10 includes a power supply device 100, a plasma device 200, a first separated plasma device 300, and a power distribution device 400.

[0036] Here, the power supply device 100 is used to supply operating power. In one embodiment, the power supply device 100 is a device that obtains energy from a power transmission and distribution network, converts it, and supplies electrical energy to one or more loads, and supplies operating power used for generating plasma by a plasma device, such as a radio frequency power supply, a high frequency power supply, an intermediate frequency power supply, a low frequency power supply, or a direct current power supply.

[0037] The plasma device 200 is used to execute a plasma process including different processes such as etching, deposition, implantation, and exhaust gas treatment in a vacuum chamber.

[0038] The first separated plasma device 300 is connected to the plasma device 200 and may have different connection methods including connection methods such as gas circuit communication, device cooperation, and electrical circuit connection in different application scenarios. The first separated plasma device 300 can execute a plasma process in cooperation with the plasma device 200, and this plasma process includes different processes such as etching, deposition, implantation, and exhaust gas treatment correspondingly.

[0039] The power distribution device 400 is electrically connected to the power supply device 100, the plasma device 200, and the first separated plasma device 300 respectively. The power distribution device 400 is used to realize at least one of the following two functions.

[0040] Function 1: To cause the plasma device 200 to execute a first plasma process, supply a first operating power to the plasma device 200 based on the operating power supplied by the power supply device 100.

[0041] Function 2: The power supply device 100 and the first separate plasma device 300 form a first separate remote plasma system, and in order to execute a second plasma process on the plasma device 200, a second operating power is supplied to the first separate plasma device 300 based on the operating power supplied by the power supply device 100.

[0042] In other words, in this embodiment, the power distribution device 400 can be realized to supply the first operating power to the plasma device 200. The power distribution device 400 can also be realized to supply the second operating power to the first separate plasma device 300. The power distribution device 400 can further supply the first operating power to the plasma device 200 and at the same time supply the second operating power to the first separate plasma device 300.

[0043] Therefore, by providing the power distribution device 400, the plasma device 200 and the first separate plasma device 300 can share one power supply device 100. Also, when it is necessary to add the plasma device 200 or the first separate plasma device 300, in the same way, by distributing power with the power distribution device 400, one power supply device 100 can continue to be shared. Thereby, it is not necessary to add an additional power supply device 100, and the purpose of reducing the power supply arrangement 100 can be achieved.

[0044] Also, when application to different application scenarios is required, since the power supply device 100 is shared, that is, it remains one power supply device, it can be adapted to different application scenarios just by adding the plasma device 200 or the first separate plasma device 300. Thereby, the process of expanding the plasma device 200 or the first separate plasma device 300 is simplified, it becomes easier to implement, and the practicality becomes higher.

[0045] Also, the power supply device 100 and the first separable plasma device 300 are two independent devices. That is, since no power supply is provided in the first separable plasma device 300, the internal design of the first separable plasma device 300 is simplified. Furthermore, if the power supply device 100 is made common, the application of the first separable plasma device 300 becomes more convenient, and the practicality can be enhanced as well.

[0046] At the same time, since no power supply is built into the first separable plasma device 300, the design difficulty can be reduced by relaxing the safety design requirements of the first separable plasma device 300.

[0047] And when the plasma equipment 200 obtains the first operating power, the plasma equipment 200 can execute the first plasma process.

[0048] When the first separable plasma device 300 obtains the second operating power, the first separable remote plasma system formed by the power supply device 100 and the first separable plasma device 300 can execute the second plasma process on the plasma equipment 200. For example, in one embodiment, the first separable plasma device 300 takes in an external gas, turns the gas into plasma to generate a processing or cleaning gas, and injects the processing or cleaning gas into the plasma equipment 200 through a pipeline, thereby executing the second plasma process on the plasma equipment 200. That is, the second plasma process includes the process by the first separable plasma device 300 and the process by the plasma equipment 200, and the second plasma process is a process jointly performed by the first separable plasma device 300 and the plasma equipment 200.

[0049] Here, both the first plasma process and the second plasma process can include different processes such as etching, deposition, implantation, and exhaust gas treatment. Also, the first plasma process and the second plasma process may be the same or different, and the embodiments of the present application do not specifically limit this.

[0050] In one embodiment, as shown in FIG. 2, the power distribution device 400 includes a circuit switch 401.

[0051] Here, the circuit switch 401 is used to electrically connect the power supply device 100 to the plasma device 200 to supply the first operating power to the plasma device 200, or to electrically connect the power supply device 100 to the first separate plasma device 300 to supply the second operating power to the first separate plasma device 300.

[0052] Specifically, when the circuit switch 401 establishes an electrical connection between the power supply device 100 and the plasma device 200, the circuit switch 401 simultaneously disconnects the electrical connection between the power supply device 100 and the first separate plasma device 300. At this time, in order to execute the first plasma process on the plasma device 200, the power supply device 100 supplies the first operating power to the plasma device 200, and the first separate plasma device 300 cannot obtain power and does not execute the plasma process.

[0053] When the circuit switch 401 establishes an electrical connection between the power supply device 100 and the first separate plasma device 300, the circuit switch 401 simultaneously disconnects the electrical connection between the power supply device 100 and the plasma device 200. At this time, the power supply device 100 supplies the second operating power to the first separate plasma device 300. After the first separate plasma device 300 executes the plasma process inside, the generated processing or cleaning gas is injected into the plasma device 200 through the pipeline, thereby executing the second plasma process on the plasma device 200.

[0054] As can be seen from the above, the circuit switch 401 can realize that the plasma device 200 or the first separate plasma device 300 shares one power supply device 100 by distributing the operating power output by the power supply device 100 to the plasma device 200 or the first separate plasma device 300.

[0055] Among these, in the corresponding circuit switched by the circuit switch 401, the operating power output by the power supply device 100 needs to be able to correspond to the plasma device 200 or the first separated plasma device 300. Also, even if it is necessary to add the plasma device 200 or the first separated plasma device 300, as long as the specifications and adjustable range of the operating power output by the power supply device 100 match the specifications of the operating power required by the added device or apparatus, the existing power supply device 100 can be shared. This reduces the difficulty of device expansion and is advantageous for quickly matching the corresponding composite plasma source system according to different application scenarios, and has high convenience and practicality.

[0056] Figure 2 further exemplarily shows a configuration of a kind of circuit switch 401. As shown in Figure 2, the circuit switch 401 includes an input node I1, a first output node O1, and a second output node O2.

[0057] The circuit switch 401 is used to conduct the input node I1 and the first output node O1. The power supply device 100 is electrically connected to the plasma device 200 through the input node I1 and the first output node O1 in sequence to supply the first operating power to the plasma device 200. In this embodiment, in order to indicate that the input node I1 and the first output node O1 are in communication, the connection between the input node I1 and the first output node O1 is a solid line, and in order to indicate that the input node I1 and the second output node O2 are not in communication, the connection between the input node I1 and the second output node O2 is a dashed line.

[0058] In some other embodiments, the circuit switch 401 is also used to connect the input node I1 and the second output node O2. As shown in FIG. 3, in order to supply the second operating power to the first separate plasma device 300, the power supply device 100 is electrically connected to the first separate plasma device 300 through the input node I1 and the second output node O2 sequentially. In this embodiment, in order to indicate that the input node I1 and the second output node O2 are in communication, a solid line is used between the input node I1 and the second output node O2, and in order to indicate that the input node I1 and the first output node O1 are not in communication, a dashed line is used between the input node I1 and the first output node O1.

[0059] Here, in actual applications, the circuit switch 401 can be realized in various ways. For example, in one embodiment, it is realized by a single-pole double-throw switch, where the fixed end of the single-pole double-throw switch corresponds to the input node I1, the first movable end of the single-pole double-throw switch corresponds to the first output node O1, and the second movable end of the single-pole double-throw switch corresponds to the second output node O2. By switching whether to connect the fixed end of the single-pole double-throw switch to the first movable end or to the second movable end, the circuit switching function of the circuit switch 401 is realized. Also, in another embodiment, it may be realized by a combination of two single-pole single-throw switches. Further, in yet another embodiment, it may be realized by any one single-pole double-throw switch of a double-pole double-throw switch.

[0060] Referring to FIG. 4, FIG. 4 exemplarily shows a configuration of a kind of plasma device 200. As shown in FIG. 4, the plasma device 200 includes a first matching network 201 and a first chamber body 202.

[0061] The first matching network 201 is connected between the load of the first chamber body 202 and the first output node O1. The first matching network 201 is used to solve the problem of impedance mismatch during power transmission by matching the impedance between the power supply device 100 and the load of the first chamber body 202, so as to obtain better power transmission performance. Here, the first output node O1 and the first matching network 201 are electrically connected, which may be directly connected or may be connected in a manner set according to the design requirements.

[0062] The first chamber body 202 may be a vacuum chamber body, that is, a container whose interior is maintained in a vacuum state, and is used to provide a vacuum environment to realize various plasma processes. For example, gas A1 is injected into the first chamber body 202 from the pipeline 203, and different plasma processes such as etching, deposition, implantation, and exhaust gas treatment are performed inside the first chamber body 202. In this embodiment, the pipeline 203 is taken as an example of being a part of the plasma device 200, but in other embodiments, the pipeline 203 may be an external pipeline detachably connected to the plasma device 200.

[0063] In any of the embodiments of the present application, the pipeline connected to each device may be a pipeline integrated with the corresponding device, or may be an external pipeline detachably connected to the corresponding device. Here, each device includes a plasma device 200, a first separable plasma device 300, and a second separable plasma device 500.

[0064] Figure 4 further exemplarily shows a configuration of the first separable plasma device 300. As shown in Figure 4, the first separable plasma device 300 includes a second matching network 301 and a second chamber body 302.

[0065] The second chamber body 302 communicates with the first chamber body 202, and the second chamber body 302 and the first chamber body 202 communicate via a gas circuit. The gas for processing or cleaning formed by being plasmaized in the second chamber body 302 can be sent into the first chamber body 202 via the gas circuit.

[0066] The second matching network 301 is connected between the load of the second chamber body 302 and the second output node O2, and is used to solve the problem of impedance mismatch during power transmission and obtain better power transmission performance by matching the impedance between the power supply device 100 and the load of the second chamber body 302. Here, the second output node O2 and the second matching network 301 are electrically connected, and may be directly connected or connected in a manner set according to the design requirements.

[0067] The second chamber body 302 may similarly be a vacuum chamber body in order to provide a vacuum environment for realizing various plasma processes. For example, gas A2 is injected into the second chamber body 302 from the pipeline 303, and different plasma processes such as etching, deposition, implantation, and exhaust gas treatment are performed in the second chamber body 302. Thereafter, the plasmaized gas may be used as the gas for processing or cleaning, and this gas for processing or cleaning is injected into the first chamber body 202 via the pipeline for performing other plasma processes. The plasmaized gas may be exhaust gas A3, and the exhaust gas A3 can be discharged via the exhaust pipeline 204.

[0068] Note that the circuit switch 401 may adopt a manual control method or an automatic control method.

[0069] In one embodiment, as shown in FIG. 5, the composite plasma source system 10 further includes a first controller U1. In order to realize automatic control for the circuit switch 401, the first controller U1 is electrically connected to the circuit switch 401.

[0070] Here, the first controller U1 is used to control the circuit switching of the circuit switch 401 in order to establish an electrical connection between the power supply device 100 and the plasma device 200, or an electrical connection between the power supply device 100 and the first separate plasma device 300. Specifically, the first controller U1 can be controlled to conduct the input node I1 and the first output node O1, and the power supply device 100 is electrically connected to the plasma device 200 in order to supply the first operating power to the plasma device 200. The first controller U1 can also control the power supply device 100 to be electrically connected to the first separate plasma device 300 in order to supply the second operating power to the first separate plasma device 300.

[0071] In the embodiment shown in FIG. 5, the first controller U1 is electrically connected to the circuit switch 401 in order to realize automatic control of the circuit switch 401. In other embodiments, the circuit switch 401 may be controlled using other processing modules having arithmetic processing capabilities.

[0072] In some embodiments, the first controller U1 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine), or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0073] In one embodiment, as shown in FIG. 6, the composite plasma source system 10 further includes a second controller U2, and the second controller U2 is electrically connected to the circuit switch 401 and the power supply device 100 respectively, and the second controller U2 is used to realize the automatic control of the circuit switch 401 and the power supply device 100.

[0074] Here, the second controller U2 is used to control the circuit switch 401 to communicate the power supply device 100 with the plasma device 200 in the first mode in order to cause the plasma device 200 to execute the first plasma process, and to control the power supply device 100 to output the first operating power. Also, in order to execute the second plasma process on the plasma device 200, in the second mode, the circuit switch 401 is controlled to communicate the power supply device 100 with the first separate plasma device 300, and the power supply device 100 is controlled to output the second operating power to the first separate plasma device 300.

[0075] In this embodiment, the second controller U2 can not only control the circuit switching of the circuit switch 401, but also simultaneously control whether the power supply device 100 outputs operating power. And when the second controller U2 detects abnormal power output of the power supply device 100, such as an overly high output voltage of the power supply device 100, by automatically stopping the operating power of the power supply device 100, damage to electrical equipment such as the plasma device 200 caused by the overly high voltage can be prevented, which is advantageous for improving the stability of the composite plasma source system 10.

[0076] Similarly, in the embodiment shown in FIG. 6, the second controller U2 realizes the automatic control of the circuit switch 401 and the power supply device 100. In other embodiments, other processing modules having arithmetic processing capabilities may be used to control the circuit switch 401 and the power supply device 100.

[0077] In some embodiments, the second controller U2 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine) or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0078] In addition, all the controllers in the embodiments of the present application, for example, the first controller U1 and the second controller U2, may be the same controller or different controllers, and the embodiments of the present application do not specifically limit this. In addition, when each controller is a different controller, the types of each controller may be the same or different.

[0079] In one embodiment, as shown in FIG. 7, the plasma device 200 includes an intake assembly, and the intake assembly includes a first pipeline 205, a second pipeline 206, a third pipeline 207, and a pipeline switch 208.

[0080] Among them, the first pipeline 205 is used to introduce the processing gas A2. The second pipeline 206 is connected to the first separated plasma device 300, and the second pipeline 206 is used to introduce the processing or cleaning gas supplied by the first separated plasma device 300. The third pipeline 207 is connected to the first chamber body 202 in the plasma device 200. The pipeline switch 208 is provided at the junction of the first pipeline 205 and the second pipeline 206 and the third pipeline 207, and the pipeline switch 208 is used to connect the first pipeline 205 and the third pipeline 207 or connect the second pipeline 206 and the third pipeline 207.

[0081] Specifically, when the pipeline switch 208 connects the first pipeline 205 and the third pipeline 207, the processing gas A2 passes through the first pipeline 205 and the third pipeline 207 in sequence and then is injected into the first chamber body 202, and the first plasma process is executed in the first chamber body 202. When the pipeline switch 208 connects the second pipeline 206 and the third pipeline 207, the processing or cleaning gas supplied by the first separated plasma device 300 passes through the second pipeline 206 and the third pipeline 207 in sequence and then is injected into the first chamber body 202, and different plasma processes such as etching, deposition, implantation, and exhaust gas treatment are executed on the first chamber body 202. Here, the processing or cleaning gas is the gas formed by the plasma of the gas A1 in the first separated plasma device 300.

[0082] In addition, in this embodiment, with reference to the embodiment shown in FIG. 5 or FIG. 6, by adding the first controller U1 or the second controller U2, the automatic control of the circuit switch 401 and the power supply device 100 may be realized. At the same time, this embodiment can also be realized by adopting a method of automatic control for the pipeline switch 208.

[0083] As shown in FIG. 8, the composite plasma source system 10 further includes a sixth controller U6 electrically connected to the pipeline switch 208.

[0084] Here, the sixth controller U6 is used to control the pipeline switch 208 to connect the first pipeline 205 and the third pipeline 207 in the first mode, and is used to control the pipeline switch 208 to connect the second pipeline 206 and the third pipeline 207 in the second mode.

[0085] When it is necessary to execute a first plasma process within the plasma device 200, corresponding to the first mode, the sixth controller U6 controls the pipeline switch 208 to connect the first pipeline 205 and the third pipeline 207. The processing gas A2 passes through the first pipeline 205 and the third pipeline 207 in sequence and then is injected into the first chamber body 202 to execute the first plasma process within the first chamber body 202. When it is necessary to execute a second plasma process for the plasma device 200, corresponding to the second mode, the sixth controller U6 controls the pipeline switch 208 to connect the second pipeline 206 and the third pipeline 207. The processing or cleaning gas passes through the second pipeline 206 and the third pipeline 207 in sequence and then is injected into the first chamber body 202 to execute different plasma processes such as etching, deposition, implantation, exhaust gas treatment, etc. for the first chamber body 202.

[0086] In this embodiment, an example is given where the sixth controller U6 can control the power supply device 100, the circuit switching unit 401, and the pipeline switching unit 208 simultaneously. On the other hand, in other embodiments, the sixth controller U6 controls at least one of the power supply device 100, the circuit switch 401, and the pipeline switch 208. For example, the sixth controller U6 may control only the pipeline switch 208.

[0087] In some embodiments, the sixth controller U6 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine), or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0088] In the composite plasma source system 10 shown in FIGS. 3 to 6, the case where the first separable plasma device 300 is connected to the gas intake pipeline of the plasma device 200 is taken as an example in each case. However, in some other embodiments, the first separable plasma device 300 may be connected to the gas delivery pipeline of the plasma device 200.

[0089] In one embodiment, FIG. 9 shows a schematic diagram of the first separable plasma device 300 connected to the gas delivery pipeline of the plasma device 200. Here, the plasma device 200 includes an exhaust member, and the exhaust member includes a gas suction assembly 211 and a first exhaust pipeline 212.

[0090] The gas suction assembly 211 is used to introduce the exhaust gas discharged from the plasma device 200.

[0091] The first exhaust pipeline 212 communicates with the gas suction assembly 211 and the intake pipeline of the first separable plasma device 300 respectively. The intake pipeline 304 of the first separable plasma device 300 communicates with the second chamber body 302 of the first separable plasma device 300. The first exhaust pipeline 212 is, that is, the gas delivery pipeline of the corresponding plasma device 200.

[0092] Specifically, after the plasma device 200 executes the first plasma process, the plasma device 200 discharges the unprocessed exhaust gas. In order to execute the exhaust gas treatment process in the second chamber body 302, this exhaust gas is introduced into the first exhaust pipeline 212 by the gas suction assembly 211, introduced into the second chamber body 302 through the first exhaust pipeline 212, and the processed exhaust gas 305 is discharged through the pipeline 306.

[0093] In one embodiment, in order to realize the circulation treatment process for the gas, the plasma device 200 and the first separable plasma device 300 can also be used in cooperation.

[0094] As shown in FIG. 10, the plasma device 200 includes a second intake pipeline 213 and a third exhaust pipeline 214, each of which is connected to the first separable plasma device 300.

[0095] Here, the second intake pipeline 213 is used to introduce the processing or cleaning gas supplied by the first separable plasma device 300. The third exhaust pipeline 214 communicates with the second chamber body 302 of the first separable plasma device 300, and the third exhaust pipeline 214 is used to discharge the exhaust gas of the plasma device 200 to the first separable plasma device 300 to perform exhaust gas treatment on the first separable plasma device 300.

[0096] In this embodiment, the circulation treatment process for the gas mainly includes the following two processes.

[0097] In the first process, the first separable plasma device 300 performs plasma treatment on the introduced second type of gas 303 to generate a processing or cleaning gas, and introduces the processing or cleaning gas into the plasma device 200 through the second intake pipeline 213. Here, when the cleaning gas is generated, it is used to clean the inside of the first chamber body 202 of the plasma device 200. When the processing gas is generated, it is used to cooperate with the plasma device 200 to perform a non-cleaning plasma process.

[0098] In the second process, the plasma device 200 performs a first plasma process to generate unprocessed exhaust gas or waste gas, takes in the unprocessed exhaust gas or waste gas into the first separable plasma device 300 through the third exhaust pipeline 214, and the first separable plasma device 300 performs treatment on the unprocessed exhaust gas or waste gas, and discharges the treated exhaust gas A4 through the pipeline 304.

[0099] Among these, the first process and the second process are not usually performed simultaneously, and the timing at which each gas such as gas A1, gas A2, and gas A4 is introduced is determined by the coordinated plasma operation and is not introduced at all times. Therefore, it is necessary to set according to the actual application scenario.

[0100] In one embodiment, as shown in FIG. 11, the composite plasma source system 10 further includes a seventh controller U7 electrically connected to the first separated plasma device 300.

[0101] The seventh controller U7 is used to control the first separated plasma device 300 to supply a gas for processing or cleaning, or to control the first separated plasma device 300 to perform exhaust gas treatment. That is, the seventh controller U7 can control the first separated plasma device 300 to execute the above-mentioned first process or second process on the first separated plasma device 300.

[0102] In some embodiments, the seventh controller U7 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine), or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0103] In the above-described embodiments, various configurations of the composite plasma source system 10 including one plasma device 200 and one first separated plasma device 300 have been described. However, it is also possible to combine the technical features of different embodiments with each other. For example, in order to realize the automatic control of the power supply device 100 and the circuit switch 401, the second controller U2 may be applied to the configuration shown in FIG. 9.

[0104] Also, as can be understood from the above-described content, according to the present application, in order to meet the demands of different application scenarios, it is also possible to add electrical equipment such as the first separable plasma device 300. Hereinafter, in the embodiments of the present application, the configuration when the composite plasma source system 10 further includes a second separable plasma device will be further described.

[0105] Referring to FIG. 12, FIG. 12 exemplarily shows the configuration of a composite plasma source system 10 including a plasma device 200, a first separable plasma device 300, and a second separable plasma device 500. Here, the first separable plasma device 300 can supply a gas for processing or cleaning to the plasma device 200, and the second separable plasma device 500 can perform processing on the exhaust gas of the plasma device 200.

[0106] As shown in FIG. 12, the second separable plasma device 500 is connected to the plasma device 200 and electrically connected to a circuit switch 401. The circuit switch 401 further has a function 1 of electrically connecting the power supply device 100 to the plasma device 300 to supply a first operating power to the plasma device 200, has a function 2 of electrically connecting the power supply device 100 to the first separable plasma device 300 to supply a second operating power to the first separable plasma device 300 and perform a second plasma process on the plasma device 200, and is used to realize one or two of the functions 3 of electrically connecting the power supply device 100 to the second separable plasma device 500 to supply a third operating power to the second separable plasma device 500 based on the operating power and form a second separable remote plasma system with the power supply device 100 and the second separable plasma device 500 to perform a third plasma process on the plasma device 200.

[0107] Specifically, the circuit switch 401 can supply the first operating power to the plasma device 200, or supply the second operating power to the first separable plasma device 300, or supply the third operating power to the second separable plasma device 500, or supply the first operating power and the second operating power to the plasma device 200 and the first separable plasma device 300 respectively, or supply the first operating power and the third operating power to the plasma device 200 and the second separable plasma device 500 respectively, or supply the second operating power and the third operating power to the first separable plasma device 300 and the second separable plasma device 500 respectively.

[0108] In this embodiment, the circuit switch 401 further includes a third output node 03. The circuit switch 401 is used to connect the input node I1 to the first output node O1, or connect the input node I1 to the second output node O2, or connect the input node I1 to the third output node O3, or connect the input node I1 to the first output node O1 and the second output node O2 respectively, or connect the input node I1 to the second output node O2 and the third output node O3 respectively, or connect the input node I1 to the first output node O1 and the third output node O3 respectively.

[0109] Here, in actual applications, the circuit switch 401 can be realized in various ways. For example, in one embodiment, it is realized by a two-pole triple-throw switch. The fixed end of the two-pole triple-throw switch corresponds to the input node I1, the first movable end of the two-pole triple-throw switch corresponds to the first output node O1, the second movable end of the two-pole triple-throw switch corresponds to the second output node O2, and the third movable end of the two-pole triple-throw switch corresponds to the third output node O3. By switching the fixed end of the two-pole triple-throw switch to be connected to the second movable end and the third movable end respectively, as shown in FIG. 12, it is realized that the input node I1 is connected to the second output node O2 and the third output node 03 respectively, and the second operating power and the third operating power are supplied to the first separable plasma device 300 and the second separable plasma device 500 respectively.

[0110] Also, for example, in another embodiment, it is realized by a single-pole triple-throw switch. The fixed end of the single-pole triple-throw switch corresponds to the input node I1, the first movable end of the single-pole triple-throw switch corresponds to the first output node O1, the second movable end of the single-pole triple-throw switch corresponds to the second output node O2, and the third movable end of the single-pole triple-throw switch corresponds to the third output node O3. By switching so that the fixed end of the single-pole triple-throw switch is connected to the second movable end, it is realized that the input node I1 is electrically connected to the second output node O2, and it is realized that the second operating power is supplied to the first separation-type plasma device 300.

[0111] In one embodiment, referring continuously to FIG. 12, the second separation-type plasma device 500 includes a third matching network 501 and a third chamber body 502, and the plasma device 200 includes a first intake pipeline 215 and a second exhaust pipeline 214.

[0112] Here, the first intake pipeline 215 communicates with the intake pipeline of the first separation-type plasma device 300 and is used for the plasma device 200 to introduce the processing or cleaning gas supplied by the first separation-type plasma device 300. Here, when it is the cleaning gas, it is used to clean the inside of the first chamber body 202 of the plasma device 200. When it is the processing gas, it is used to execute a non-cleaning type plasma process in cooperation with the plasma device 200.

[0113] The second exhaust pipeline 214 communicates with the third chamber body 502 and is used for the plasma device 200 to discharge the exhaust gas of the plasma device 200 to the second separation-type plasma device 500, so that the second separation-type plasma device 500 processes this exhaust gas, and the processed exhaust gas A6 is discharged through the pipeline 504.

[0114] In this embodiment, the first separable plasma device 300 is used to supply a gas for processing or cleaning in order to execute different plasma processes such as etching, deposition, implantation, and exhaust gas treatment within the plasma equipment 200. The second separable plasma device 500 is used to receive the exhaust gas discharged from the plasma equipment 200 in order to execute the plasma process of exhaust gas treatment in the second separable plasma device 500.

[0115] Note that in this embodiment, in order to realize the automatic control process of the circuit switch 401, the circuit switch 401 may be controlled using a controller.

[0116] Also, in the above-described embodiments, all cases where the power switching device 400 includes the circuit switch 401 are taken as examples. However, the hardware configuration of the power switching device 400 as shown in FIGS. 2 to 12 is merely an example. Further, the power switching device 400 may have more or fewer components than those shown, two or more components may be combined, or it may have a different component arrangement.

[0117] For example, in some other embodiments, as shown in FIG. 13, the power switching device 400 includes a power distributor 402. The power distributor 402 is electrically connected to the plasma equipment 200 and the first separable plasma device 300, respectively. The power distributor 402 is used to realize at least one of the functions of supplying the first operating power to the plasma equipment 200 by distributing the first part of the operating power supplied by the power supply device 100 to the plasma equipment, and supplying the second operating power to the first separable plasma device 300 by distributing the second part of the operating power supplied by the power supply device 100 to the first separable plasma device 300.

[0118] Here, the power distributor 402 may be a device that divides one input energy into two or more parts and outputs equal or unequal energy. Specifically, the power distributor 402 divides the operating power supplied by the power supply device 100 into a plurality of partial powers in advance according to the devices that require power, and supplies the power required for operation to each device. Thus, when the devices using power include the plasma device 200 and the first separated plasma device 300, the operating power supplied by the power supply device 100 can be distributed into at least two partial powers including at least a first partial power and a second partial power. In other words, the sum of the first partial power and the second partial power is less than or equal to the operating power supplied by the power supply device 100. Then, when the plasma device 200 needs to execute a first plasma process, the power distributor 402 inputs the first partial power to the plasma device 200 to supply the first operating power to the plasma device 200. When the first separated plasma device 300 needs to obtain power to execute a second plasma process on the plasma device 200, the power distributor 402 inputs the second partial power to the first separated plasma device 300 to supply the second operating power to the first separated plasma device 300.

[0119] Similarly, the power distributor 402 may adopt a manual control method or an automatic control method.

[0120] In one embodiment, as shown in FIG. 14, the composite plasma source system 10 further includes a third controller U3. To achieve automatic control of the power distributor 402, the third controller U3 is electrically connected to the power distributor 402.

[0121] The third controller U3 is used to control the power distribution of the power distributor 402 in order to implement at least one of the functions of distributing the power of the first part of the operating power to the plasma device 200 and distributing the power of the second part of the operating power to the first separate plasma device 300. Specifically, the third controller U3 can control the power distributor 402 to implement distributing the power of the first part to the plasma device 200, or distributing the power of the second part to the first separate plasma device 300, or simultaneously distributing the power of the first part and the power of the second part to the plasma device 200 and the first separate plasma device 300.

[0122] In this embodiment, the third controller U3 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine) or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0123] In one embodiment, as shown in FIG. 15, the composite plasma source system 10 further includes a fourth controller U4, and the fourth controller U4 is electrically connected to the power distributor 402 and the power supply device 100 respectively.

[0124] The fourth controller U4 is used to control the power distributor 402 to output the power of the first part to the plasma device 200 in the first mode to cause the plasma device 200 to execute the first plasma process, and control the power supply device 100 to output the operating power to the power distributor 402. To execute the second plasma process on the plasma device 200, in the second mode, control the power distributor 402 to output the power of the second part to the first separated plasma device 300, and control the power supply device 100 to output the operating power to the power distributor 402. And to cause the plasma device 200 and the first separated plasma device 300 to execute the third plasma process, in the third mode, control the power distributor 402 to output the power of the first part to the plasma device 200, control the power distributor 402 to output the power of the second part to the first separated plasma device 300, and control the power supply device 100 to output the operating power to the power distributor 402.

[0125] In this embodiment, the fourth controller U4 can not only control the power distribution of the power distributor 402 in the same way as the third controller U3, but also control whether the power supply device 100 outputs the operating power at the same time. Thereby, when an abnormality occurs in the power supply device 100, in order to prevent damage to electrical equipment such as the plasma device 200 due to the abnormality of the operating power, the output of the operating power by the power supply device 100 can be stopped in a timely manner, which is advantageous for improving the stability of the operation of electrical equipment such as the plasma device 200, that is, the stability of the composite plasma source system 10.

[0126] Here, the fourth controller U4 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine), or other programmable logic devices, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0127] In one embodiment, referring to FIG. 16, FIG. 16 shows a configuration in which the power switching device 400 includes a power distributor 402, and the composite plasma source system 10 further includes a second separate plasma device 500.

[0128] The second separate plasma device 500 is connected to the plasma device 200 and may have different connection methods including connection methods such as gas circuit communication, device cooperation, and electrical circuit connection in different application scenarios. The second separate plasma device 500 is electrically connected to the power distributor 402.

[0129] The power distributor 402 further Function 1 of supplying the first operating power to the plasma device 200 by distributing the first part of the operating power to the plasma device 200, Function 2 of supplying the second operating power to the first separate plasma device 300 by distributing the second part of the operating power to the first separate plasma device 300, Function 3 of supplying the third operating power to the second separate plasma device 500 by forming a second separate remote plasma system with the power supply device 100 and the second separate plasma device 500 and distributing the third part of the operating power to the second separate plasma device 500 to execute a third plasma process on the plasma device 200, is used to realize at least one of the functions.

[0130] Specifically, the power distributor 402 can supply the first operating power to the plasma device 200, or supply the second operating power to the first separable plasma device 300, or supply the third operating power to the second separable plasma device 500, or supply the first operating power and the second operating power to the plasma device 200 and the first separable plasma device 300 respectively, or supply the first operating power and the third operating power to the plasma device 200 and the second separable plasma device 500 simultaneously, or supply the second operating power and the third operating power to the first separable plasma device 300 and the second separable plasma device 500 simultaneously, or supply the first operating power, the second operating power and the third operating power to the plasma device 200, the first separable plasma device 300 and the second separable plasma device 500 simultaneously.

[0131] Note that, in order to realize the automatic control process of the power distributor 402, the power distributor 402 in this embodiment may also be controlled using a controller.

[0132] Meanwhile, in the embodiments shown in FIGS. 13 to 16, for the specific configurations and actual application processes of the plasma device 200, the first separable plasma device 200, and the second separable plasma device 500, reference may be made to the descriptions in FIGS. 4 to 12, and the descriptions are omitted here.

[0133] For example, by referring to the configurations and connection methods of the plasma device 200 and the first separable plasma device 300 shown in FIG. 4 and combining them with the configuration of the composite plasma source system 10 shown in FIG. 13, the configuration of the composite plasma source system 10 shown in FIG. 17 can be obtained.

[0134] Furthermore, for example, by referring to the configurations and connection methods of the plasma device 200 and the first separable plasma device 300 shown in FIG. 7 and combining them with the configuration of the composite plasma source system 10 shown in FIG. 13, the configuration of the composite plasma source system 10 shown in FIG. 18 can be obtained.

[0135] Furthermore, for example, by referring to the configuration and connection method of the plasma device 200 shown in FIG. 9 and the first separated plasma device 300, and combining the configuration of the composite plasma source system 10 shown in FIG. 13, the configuration of the composite plasma source system 10 shown in FIG. 19 can be obtained.

[0136] Furthermore, for example, by referring to the configuration and connection method of the plasma device 200 shown in FIG. 10 and the first separated plasma device 300, and combining the configuration of the composite plasma source system 10 shown in FIG. 13, the configuration of the composite plasma source system 10 shown in FIG. 20 can be obtained.

[0137] Furthermore, for example, by referring to the configuration and connection method of the plasma device 200 shown in FIG. 12 and the first separated plasma device 300, and combining the configuration of the composite plasma source system 10 shown in FIG. 16, the configuration of the composite plasma source system 10 shown in FIG. 21 can be obtained.

[0138] In addition, in the embodiments using the power distributor 402, any one of the plasma processes in the embodiments of the present application can be similarly executed. Also, depending on the connection between the first separated plasma device 300 and the plasma device 200, the power distributor 402 can supply the first operating power to the plasma device 200 by distributing the first part of the operating power to the plasma device 200, supply the second operating power to the first separated plasma device 300 by distributing the second part of the operating power to the first separated plasma device 300, and supply the third operating power to the second separated plasma device 500 by distributing the third part of the operating power to the second separated plasma device 500, and at least one of the functions can be realized simultaneously.

[0139] In some embodiments, the first operating power and the second operating power in any one of the embodiments of the present application include the same power parameters, or different power parameters, or partially the same power parameters.

[0140] That is, the first operating power and the second operating power either include exactly the same power parameters, or include completely different power parameters, or include partially different power parameters.

[0141] Here, in one embodiment, the power parameters of the first operating power include at least one of voltage, current, phase, frequency, and power, and the power parameters of the second operating power include at least one of voltage, current, phase, frequency, and power.

[0142] For example, the fact that the power parameters of the first operating power and the second operating power both include voltage and current corresponds to the first operating power and the second operating power including exactly the same power parameters. The fact that the power parameters of the first operating power include voltage and the power parameters of the second operating power include current corresponds to the first operating power and the second operating power including completely different power parameters. The fact that the power parameters of the first operating power include voltage and frequency and the power parameters of the second operating power include current and frequency corresponds to the first operating power and the second operating power including partially the same power parameters.

[0143] In one embodiment, in order to realize automatic control of the output power parameters of the power supply device 100, similarly, it can be realized by adding a controller.

[0144] Referring to FIG. 22 in relation to FIG. 1, as shown in FIG. 22, the composite plasma source system 10 further includes a fifth controller U5 electrically connected to the power supply device 100.

[0145] The fifth controller U5 is used to control the power supply device 100 to output power according to the power parameters so as to supply at least one of the first operating power and the second operating power.

[0146] The fifth controller U5 may be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine), or other programmable logic device, discrete gate or transistor logic, discrete hardware assembly, or any combination of these components.

[0147] In this embodiment, taking the case where the composite plasma source system 10 includes the plasma device 200 and the first separate plasma device 300 as an example, the power supply device 100 only needs to supply at least one of the first operating power and the second operating power. On the other hand, when the composite plasma source system 10 further includes other electrical equipment, such as the second separate plasma device 500, the fifth controller U5 may control the power supply device 100 to output at least one of the first operating power, the second operating circuit, and the third operating power. In short, depending on the electrical equipment, the fifth controller U5 can control the power supply device 100 to automatically supply the power corresponding to the corresponding electrical equipment.

[0148] Referring to FIG. 23, FIG. 23 is a schematic configuration diagram of the separate remote plasma device 20 provided by the embodiment of the present application.

[0149] As shown in FIG. 23, in the second aspect, the separate remote plasma device 20 includes a power supply device 1000 and a separate plasma device 2000.

[0150] Among them, the power supply device 1000 supplies operating power. Here, since the power supply device 1000 has a similar actual application process to the power supply device 100 in the above-described embodiment, the description is omitted. For example, in one embodiment, the adjustable power parameter of the operating power includes at least one of voltage, current, phase, frequency, and power.

[0151] The separable plasma device 2000 is electrically connected to the power supply device 1000, and the separable plasma device 2000 includes a matching network 2001 and a chamber body 2002.

[0152] The matching network 2001 is connected to the power supply device 1000 and the load of the chamber body 2002 respectively, and is used to solve the problem of impedance mismatch during power transmission and obtain better power transmission performance by matching the impedances of the power supply device 1000 and the load of the chamber body 2002.

[0153] The chamber body 2002 may be a vacuum chamber body to provide a vacuum environment for the separable plasma device 2000 to realize various plasma processes. For example, gas is injected into the chamber body 2002 from a pipeline, and different plasma processes such as etching, deposition, implantation, and exhaust gas treatment are performed inside the chamber body 2002.

[0154] In this embodiment, the power supply device 1000 and the separable plasma device 2000 are two independent devices. On the one hand, since no power supply is provided in the separable plasma device 2000, it contributes to the simplification of the internal space design of the separable plasma device 2000. On the other hand, when it is necessary to add a separable plasma device 2000 for another application scenario, the power supply device 1000 can be shared, that is, with one power supply device 1000 remaining unchanged, only by adding a separable plasma device 2000, it can adapt to different application scenarios. Thereby, the process of expanding the separable plasma device 2000 is simplified, it becomes easier to implement, and the practicality is higher.

[0155] In one embodiment, as shown in FIG. 24, the separable remote plasma device 20 further includes a controller 3000, the controller 3000 is connected to the power supply device 1000, and the controller 3000 is used to control the power supply device 1000 to output power according to power parameters.

[0156] The controller 3000 may be a general-purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a one-chip computer, an ARM (Acorn RISC Machine) or other programmable logic device, discrete gates or transistor logic, discrete hardware assemblies, or any combination of these components.

[0157] In one embodiment, as shown in FIG. 25, the remote plasma device 20 further includes a first intake pipeline 2003 and a first exhaust pipeline 2004, which are respectively connected to the chamber body 2002.

[0158] Among these, the first intake pipeline 2003 is used to introduce the source gas A10, and the first exhaust pipeline 2004 is used to send the gas for processing or cleaning formed by the source gas A10 through the plasma operation to a plasma device (not shown) for performing different plasma processes such as etching, deposition, implantation, and exhaust gas treatment on the plasma device.

[0159] In one embodiment, as shown in FIG. 26, the remote plasma device 20 further includes a second intake pipeline 2005, a third intake pipeline 2006, and a second exhaust pipeline 2007, which are respectively connected to the chamber body 2002.

[0160] Among these, the second intake pipeline 2005 is used to introduce the exhaust gas A12 sent from a plasma device (not shown), the third intake pipeline 2006 is used to introduce the source gas A11 for performing the plasma operation to convert it into the exhaust gas A12, and the second exhaust pipeline 2007 is used to discharge the exhaust gas A13 after passing through the treatment by the plasma operation.

[0161] Here, in the embodiments of FIGS. 25 and 26, the plasma operations include different plasma processes such as etching, deposition, implantation, exhaust gas treatment, etc. For the plasma device 200, since the description of the plasma device 200 in the above-described embodiments can be referred to, the description is omitted here.

[0162] Note that for the configuration of the separable plasma device 2000, since a more specific description of the first separable plasma device 300 in the above-described embodiments can be further referred to, for the sake of brevity, the description is omitted here.

[0163] Finally, the above embodiments do not limit the technical means of the present application and are only used for explanation. Under the concept of this specification, the technical features in the above embodiments or different embodiments may be combined with each other, the steps may be realized in any order, and there may be many other changes as described above in different aspects of this specification, but for the sake of brevity, details are not provided. Although this specification has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical means described in each of the foregoing embodiments can be modified, or some of its technical features can be replaced by equivalents, and these modifications or replacements do not deviate from the essence of the corresponding technical solution from the scope of the technical solutions of each embodiment of the present application.

[0164] Finally, the above embodiments do not limit the technical means of the present application and are only used for explanation. Under the concept of this specification, the technical features in the above embodiments or different embodiments may be combined with each other, the steps may be realized in any order, and there may be many other changes as described above in different aspects of this specification, but for the sake of brevity, details are not provided. Although this specification has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical means described in each of the foregoing embodiments can be modified, or some of its technical features can be replaced by equivalents, and these modifications or replacements do not deviate from the essence of the corresponding technical solution from the scope of the technical solutions of each embodiment of the present application.

Claims

1. A power supply device used to supply operating power, a plasma device, a first separable plasma device connected to the plasma device, and a power distribution device electrically connected to the power supply device, the plasma device, and the first separable plasma device respectively, wherein the power distribution device, for causing the plasma device to execute a first plasma process, has a function of supplying first operating power to the plasma device based on the operating power; for forming a first separable remote plasma system with the power supply device and the first separable plasma device, and causing the plasma device to execute a second plasma process, has a function of supplying second operating power to the first separable plasma device based on the operating power; is used to realize at least one of the functions, the power distribution device includes a circuit switcher, the circuit switcher is used to electrically connect the power supply device to the plasma device to supply the first operating power to the plasma device, or to electrically connect the power supply device to the first separable plasma device to supply the second operating power to the first separable plasma device, further includes a second separable plasma device, the second separable plasma device is connected to the plasma device and electrically connected to the circuit switcher, the circuit switcher further, for supplying the first operating power to the plasma device, has a function of electrically connecting the power supply device to the plasma device; for supplying the second operating power to the first separable plasma device and causing the plasma device to execute the second plasma process, has a function of electrically connecting the power supply device to the first separable plasma device; for supplying third operating power to the second separable plasma device based on the operating power and forming a second separable remote plasma system with the power supply device and the second separable plasma device, and causing the plasma device to execute a third plasma process, has a function of electrically connecting the power supply device to the second separable plasma device; is used to realize one or two of the functions, characterized in that it is a composite plasma source system.

2. The circuit switcher includes an input node, a first output node, and a second output node. It is used to connect the input node to the first output node or to connect the input node to the second output node. The plasma device includes a first matching network and a first chamber body. The first matching network is connected between the load of the first chamber body and the first output node and is used to match the impedance between the power supply device and the load of the first chamber body. The first separable plasma device includes a second chamber body and a second matching network. The second chamber body communicates with the first chamber body. The second matching network is connected between the load of the second chamber body and the second output node and is used to match the impedance between the power supply device and the load of the second chamber body. The composite plasma source system according to claim 1, characterized in that.

3. It further includes a first controller electrically connected to the circuit switch. The first controller is used to control the circuit switching of the circuit switch to establish an electrical connection between the power supply device and the plasma device or an electrical connection between the power supply device and the first separable plasma device. The composite plasma source system according to claim 1, characterized in that.

4. It further includes a second controller electrically connected to the circuit switch and the power supply device respectively. The second controller In a first mode, it is used to control the circuit switch to connect the power supply device and the plasma device so as to execute the first plasma process on the plasma device, and to control the power supply device to output the first operating power to the plasma device. And In a second mode, it is used to control the circuit switch to connect the power supply device and the first separable plasma device so as to execute the second plasma process on the plasma device, and to control the power supply device to output the second operating power to the first separable plasma device. The composite plasma source system according to claim 1, characterized in that.

5. A power supply device used to supply operating power, A plasma device, A first separable plasma device connected to the plasma device, A power distribution device electrically connected to the power supply device, the plasma device, and the first separable plasma device, respectively, wherein the power distribution device is used to supply a first operating power to the plasma device based on the operating power in order to cause the plasma device to execute a first plasma process; is used to supply a second operating power to the first separable plasma device based on the operating power in order to form a first separable remote plasma system with the power supply device and the first separable plasma device and execute a second plasma process on the plasma device; is used to realize at least one of the above functions, wherein the power distribution device includes a power distributor, and the power distributor is used to supply the first operating power to the plasma device by distributing a first part of the operating power to the plasma device; is used to supply the second operating power to the first separable plasma device by distributing a second part of the operating power to the first separable plasma device; is used to realize at least one of the above functions, further includes a second separable plasma device, wherein the second separable plasma device is connected to the plasma device and electrically connected to the power distributor, and the power distributor further is used to supply the first operating power to the plasma device by distributing a first part of the operating power to the plasma device; is used to supply the second operating power to the first separable plasma device by distributing a second part of the operating power to the first separable plasma device; is used to supply a third operating power to the second separable plasma device by distributing a third part of the operating power to the second separable plasma device in order to form a second separable remote plasma system with the power supply device and the second separable plasma device and execute a third plasma process on the plasma device; is used to realize at least one of the above functions A composite plasma source system characterized by the above. **Claim 6** further includes a third controller electrically connected to the power distributor, wherein the third controller is used to distribute a first part of the operating power to the plasma device A function of distributing power of a second part of the operating power to the first separated plasma device, for realizing at least one of the functions of, used to control the power distribution of the power distributor The composite plasma source system according to claim 5, characterized in that.

7. Further including a fourth controller electrically connected to the power distributor and the power supply device respectively, The fourth controller, In a first mode, in order to cause the plasma equipment to execute the first plasma process, the power distributor is controlled to output the power of the first part to the plasma equipment, and is used to control the power supply device to output the operating power to the power distributor, and In a second mode, in order to execute the second plasma process on the plasma equipment, the power distributor is controlled to output the power of the second part to the first separated plasma device, and is used to control the power supply device to output the operating power to the power distributor, and In a third mode, in order to cause the plasma equipment and the first separated plasma device to execute a third plasma process, the power distributor is controlled to output the power of the first part to the plasma equipment, the power distributor is controlled to output the power of the second part to the first separated plasma device, and is used to control the power supply device to output the operating power to the power distributor The composite plasma source system according to claim 5, characterized in that.

8. The first operating power and the second operating power include the same power parameters, or different power parameters, or partially the same power parameters The composite plasma source system according to claim 1 or 5, characterized in that.

9. The power parameters include at least one of voltage, current, phase, frequency, and power The composite plasma source system according to claim 8, characterized in that.

10. Further including a fifth controller electrically connected to the power supply device, The fifth controller is used to control the power supply device to output power according to the power parameters so as to supply at least one of the first operating power and the second operating power The composite plasma source system according to claim 8, characterized in that.

11. The plasma device includes an intake assembly, The intake assembly is A first pipeline used to introduce a processing gas, A second pipeline connected to the first separated plasma device and used to introduce a processing or cleaning gas supplied by the first separated plasma device, A third pipeline connected to the first chamber body in the plasma device, A pipeline switch provided at the junction of the first pipeline, the second pipeline, and the third pipeline, and used to conduct the first pipeline and the third pipeline, or to conduct the second pipeline and the third pipeline, The composite plasma source system according to claim 1 or 5, characterized in that it includes the above.

12. It further includes a sixth controller electrically connected to the pipeline switch, The sixth controller is In the first mode, it is used to control the pipeline switch to conduct the first pipeline and the third pipeline, and In the second mode, it is used to control the pipeline switch to conduct the second pipeline and the third pipeline The composite plasma source system according to claim 11, characterized in that.

13. A power supply device used to supply operating power, A plasma device, A first separated plasma device connected to the plasma device, Including a power distribution device electrically connected to the power supply device, the plasma device, and the first separated plasma device respectively, The power distribution device is For causing the plasma device to execute a first plasma process, a function of supplying a first operating power to the plasma device based on the operating power, Forming a first separated remote plasma system with the power supply device and the first separated plasma device, and for causing the plasma device to execute a second plasma process, a function of supplying a second operating power to the first separated plasma device based on the operating power, Used to realize at least one of the above functions, The plasma device includes an exhaust member, The exhaust member includes a gas suction assembly used to introduce exhaust gas discharged from the plasma device and a first exhaust pipeline, The first exhaust pipeline communicates with the gas suction assembly and the intake pipeline of the first separable plasma device respectively. The intake pipeline of the first separable plasma device communicates with the second chamber body of the first separable plasma device. A composite plasma source system characterized by the above.

14. The second separable plasma device includes a third matching network and a third chamber body. The plasma equipment includes a first intake pipeline and a second exhaust pipeline. The first intake pipeline communicates with the intake pipeline of the first separable plasma device, and is used for the plasma equipment to introduce the processing or cleaning gas supplied by the first separable plasma device. The second exhaust pipeline communicates with the third chamber body, and is used for the plasma equipment to discharge the exhaust gas of the plasma equipment to the second separable plasma device. The composite plasma source system according to claim 1 or 5, characterized by the above.

15. A power supply device used to supply operating power, Plasma equipment, A first separable plasma device connected to the plasma equipment, A power distribution device electrically connected to the power supply device, the plasma equipment, and the first separable plasma device respectively. The power distribution device is used to supply the plasma equipment with a first operating power based on the operating power to execute a first plasma process on the plasma equipment; form a first separable remote plasma system with the power supply device and the first separable plasma device, and supply the first separable plasma device with a second operating power based on the operating power to execute a second plasma process on the plasma equipment. It is used to realize at least one of the above functions. The plasma equipment includes a second intake pipeline and a third exhaust pipeline respectively connected to the first separable plasma device. The second intake pipeline is used to introduce the processing or cleaning gas supplied by the first separable plasma device. The third exhaust pipeline communicates with the second chamber body of the first separable plasma device, and is used to discharge the exhaust gas of the plasma equipment to the first separable plasma device to execute exhaust gas treatment on the first separable plasma device. A composite plasma source system characterized by the above.

16. Further comprising a seventh controller electrically connected to the first separable plasma device, wherein the seventh controller is used to control the first separable plasma device to supply the gas for processing or cleaning, or to control the first separable plasma device to perform the exhaust gas treatment The composite plasma source system according to claim 15, characterized in that.

17. A power supply device for supplying operating power, and a separable plasma device electrically connected to the power supply device, wherein the separable plasma device includes a matching network and a chamber body, the matching network is connected to the power supply device and the load of the chamber body respectively, and is used to match the impedances of the power supply device and the load of the chamber body, further comprising a second intake pipeline, a third intake pipeline, and a second exhaust pipeline respectively connected to the chamber body, wherein the second intake pipeline is used to introduce the exhaust gas sent out from the plasma equipment, the third intake pipeline is used to introduce the source gas for performing plasma operation on the exhaust gas, and the second exhaust pipeline is used to discharge the exhaust gas after being processed by the plasma operation The separable remote plasma equipment is characterized in that.

18. The adjustable power parameter of the operating power includes at least one of voltage, current, phase, frequency, and power The separable remote plasma equipment according to claim 17, characterized in that.

19. A controller connected to the power supply device, which is used to control the power supply device to output power according to the power parameter The separable remote plasma equipment according to claim 18, further comprising.

20. Further comprising a first intake pipeline and a first exhaust pipeline respectively connected to the chamber body, wherein the first intake pipeline is used to introduce the source gas, and the first exhaust pipeline is used to send the gas for processing or cleaning formed by the source gas through plasma operation to the plasma equipment The separable remote plasma equipment according to claim 17, characterized in that.

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