Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing device that can improve the cleanliness of a substrate.SOLUTION: The substrate processing method includes the steps of storing diluted isopropyl alcohol (dIPA), which is isopropyl alcohol which is diluted, in a processing tank (3) (S14), and immersing a substrate (W) treated for water repellency into the diluted isopropyl alcohol (dIPA) in the processing tank (3) (S15).SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a substrate processing method and a substrate processing apparatus.

Background Art

[0002] In the process of processing a substrate such as a semiconductor wafer to manufacture a product such as a semiconductor device, there are included a chemical solution treatment step of treating the substrate with a chemical solution, a rinse step of removing the chemical solution from the surface of the substrate with a rinse solution, and a drying step of drying the substrate.

[0003] However, in the drying step, the pattern formed on the surface of the substrate may collapse. The collapse of the pattern is caused by the surface tension of the rinse solution that has penetrated into the pattern.

[0004] Therefore, in order to avoid the collapse of the pattern, a water repellent agent may be supplied to the substrate to cover the pattern with a water repellent protective film. For example, Patent Document 1 discloses a substrate processing method in which a chemical solution treatment, a pure water rinse treatment, an alcohol rinse treatment, a water repellent treatment, an alcohol rinse treatment, a pure water rinse treatment, and a drying treatment are sequentially performed on a substrate. The alcohol rinse treatment after the water repellent treatment is a treatment for replacing and removing the water repellent agent remaining on the surface of the substrate with IPA (isopropyl alcohol).

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, when an alcohol rinse treatment is performed after the water repellent treatment, the water repellent agent remaining on the surface of the substrate may react with IPA to generate particles. As a result, the cleanliness of the substrate may decrease.

[0007] The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing method and a substrate processing apparatus capable of improving the cleanliness of a substrate.

Means for Solving the Problems

[0008] According to one aspect of the present invention, a substrate processing method is a method for processing a substrate. The substrate processing method includes a step of storing diluted isopropyl alcohol (liquid diluted isopropyl alcohol), which is diluted isopropyl alcohol, in a processing tank, and an immersion step of immersing the substrate subjected to a water repellency treatment in the diluted isopropyl alcohol in the processing tank.

[0009] In an embodiment, the substrate processing method further includes a step of drying the substrate before immersing the substrate subjected to a water repellency treatment in the diluted isopropyl alcohol in the processing tank.

[0010] In an embodiment, in the immersion step, after the step of supplying the organic solvent, the substrate having a water repellent agent remaining on its surface is lowered from a position above the processing tank and immersed in the liquid diluted isopropyl alcohol in the processing tank.

[0011] In an embodiment, the substrate processing method further includes a step of supplying a vaporized water repellent agent into a sealed space containing the processing tank to perform a water repellency treatment on the substrate.

[0012] In an embodiment, in the step of supplying the organic solvent, a vaporized water repellent agent is supplied into a sealed space containing the processing tank to perform a water repellency treatment on the substrate.

[0013] In one embodiment, the substrate processing method further includes a step of immersing the substrate in the rinse liquid stored in the processing tank, a step of pulling up the substrate from the rinse liquid, and a step of draining the rinse liquid from the processing tank. The water-repellent treatment is performed after draining the rinse liquid.

[0014] In one embodiment, in the step of supplying the organic solvent, the vaporized organic solvent is supplied into the sealed space.

[0015] In one embodiment, the water-repellent treatment is performed by reducing the pressure inside the sealed space.

[0016] In one embodiment, the substrate processing method further includes a step of returning the pressure inside the sealed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank.

[0017] In one embodiment, the substrate processing method further includes a pulling-up step of pulling up the substrate from the diluted isopropyl alcohol and a drying step of drying the substrate pulled up from the diluted isopropyl alcohol.

[0018] In one embodiment, the substrate processing method further includes a step of supplying a vaporized organic solvent into the sealed space that houses the processing tank before the pulling-up step. The drying step includes a step of supplying an inert gas into the sealed space.

[0019] In one embodiment, the drying step is performed by reducing the pressure inside the sealed space that houses the processing tank.

[0020] In one embodiment, in the immersion step, the diluted isopropyl alcohol is supplied to the processing tank.

[0021] In one embodiment, in the immersion step, the substrate is vibrated.

[0022] In one embodiment, in the diluted isopropyl alcohol, the concentration of isopropyl alcohol is 0.3% or more and less than 5%.

[0023] According to another aspect of the present invention, a substrate processing apparatus processes a substrate. The substrate processing apparatus includes a processing tank, a chamber, a moving unit, and a control unit. The processing tank stores diluted isopropyl alcohol (liquid diluted isopropyl alcohol) which is diluted isopropyl alcohol. The chamber houses the processing tank. The moving unit moves the substrate between a first processing position in the processing tank and a second processing position outside the processing tank within the chamber. The control unit controls the moving unit to immerse the substrate subjected to a water-repellent treatment in the diluted isopropyl alcohol in the processing tank.

[0024] In one embodiment, the substrate processing apparatus includes a nozzle that supplies a vaporized organic solvent to the substrate subjected to a water-repellent treatment.

[0025] In one embodiment, the control unit controls the moving unit to lower the substrate having a water-repellent agent remaining on its surface from a position above the processing tank and immerse it in the liquid diluted isopropyl alcohol in the processing tank.

Effects of the Invention

[0026] According to the substrate processing method and the substrate processing apparatus according to the present invention, the cleanliness of the substrate can be improved.

Brief Description of the Drawings

[0027]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Embodiments for Carrying Out the Invention

[0028] Hereinafter, embodiments of the substrate processing method and the substrate processing apparatus according to the present invention will be described with reference to the drawings (FIGS. 1 to 16). However, the present invention is not limited to the following embodiments. Note that, in cases where the description is repetitive, the description may be omitted as appropriate. Also, in the figures, the same or corresponding parts are denoted by the same reference numerals and the description will not be repeated.

[0029] In this specification, for ease of understanding, the X-direction, Y-direction, and Z-direction that are orthogonal to each other may be described. Typically, the X-direction and Y-direction are parallel to the horizontal direction, and the Z-direction is parallel to the vertical direction. However, the definitions of these directions are not intended to limit the orientation during the execution of the substrate processing method according to the present invention and the orientation during the use of the substrate processing apparatus according to the present invention.

[0030] The "substrate" in this embodiment can be applied to various substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks. Hereinafter, the substrate processing method and substrate processing apparatus mainly used for processing disk-shaped semiconductor wafers will be taken as an example to describe this embodiment, but it is similarly applicable to the processing of various substrates exemplified above. Also, various shapes of substrates can be applied.

[0031] [Embodiment 1] Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 9. First, the substrate processing apparatus 100 of this embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic diagram showing the internal configuration of the substrate processing apparatus 100 of this embodiment. FIG. 2 is another schematic diagram showing the internal configuration of the substrate processing apparatus 100 of this embodiment. The substrate processing apparatus 100 of this embodiment is a batch type. Therefore, the substrate processing apparatus 100 processes a plurality of substrates W collectively. Specifically, the substrate processing apparatus 100 processes a plurality of substrates W in lots. One lot consists of, for example, 25 substrates W.

[0032] As shown in FIG. 1, the substrate processing apparatus 100 includes a processing unit 101. The processing unit 101 dries the substrate W. Specifically, the processing unit 101 includes a chamber 2, a processing tank 3, a gas supply unit 4, a liquid supply unit 5, a holding unit 50, an opening / closing unit 102, and a lifting unit 103. Hereinafter, the processing unit 101 will be referred to as the "drying processing unit 101".

[0033] The substrate W has a pattern-formed surface. The pattern is formed on the surface of the substrate W by a wet etching process. Specifically, the substrate processing apparatus 100 includes a processing unit for etching the substrate W in addition to the drying processing unit 101. The substrate W etched by this processing unit is transported (loaded) into the drying processing unit 101.

[0034] The chamber 2 houses a processing tank 3, a gas supply unit 4, and a liquid supply unit 5. Further, a holding unit 50 is housed in the chamber 2 during the processing of the substrate W. The chamber 2 has a cover 2a. The cover 2a is attached to the opening at the upper part of the chamber 2. The cover 2a is openable and closable.

[0035] The processing tank 3 stores a processing liquid. The processing liquid includes a rinse liquid and diluted IPA (isopropyl alcohol). Therefore, the processing tank 3 stores the rinse liquid and the diluted IPA. The diluted IPA indicates diluted IPA. In the present embodiment, the rinse liquid is DIW (Deionized Water). Also, the diluted IPA is IPA diluted by DIW. In other words, the diluted IPA is a mixture of IPA and DIW. Hereinafter, the diluted IPA may be described as "dIPA".

[0036] The gas supply unit 4 supplies gas into the chamber 2. Specifically, the gas supply unit 4 supplies an inert gas, vapor of an organic solvent, and vapor of a water repellent SMT into the chamber 2. In the present embodiment, the vapor of the organic solvent is the vapor of IPA.

[0037] Specifically, the gas supply unit 4 includes the first nozzle 11 to the eighth nozzle 18. The first nozzle 11 to the eighth nozzle 18 are disposed inside the chamber 2 and outside the processing tank 3. Specifically, the first nozzle 11 to the eighth nozzle 18 are disposed above the processing tank 3. As described with reference to FIG. 2, the first nozzle 11 to the sixth nozzle 16 discharge an inert gas. Further, the third nozzle 13 and the fourth nozzle 14 discharge IPA vapor. The seventh nozzle 17 and the eighth nozzle 18 discharge the vapor of the water-repellent agent SMT.

[0038] The water-repellent agent SMT is, for example, a silicon-based water-repellent agent or a metal-based water-repellent agent. The silicon-based water-repellent agent makes silicon or a compound containing silicon water-repellent (hydrophobic). The metal-based water-repellent agent makes a metal or a compound containing a metal water-repellent (hydrophobic).

[0039] The silicon-based water-repellent agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorinated hydrophobic agent. The non-chlorinated hydrophobic agent includes, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound.

[0040] The metal-based water-repellent agent includes, for example, at least one of an amine having a hydrophobic group and an organosilicon compound.

[0041] The water-repellent agent SMT may be diluted with a solvent that is miscible with the hydrophilic organic solvent. The solvent is, for example, IPA or PGMEA (propylene glycol monomethyl ether acetate).

[0042] The liquid supply unit 5 supplies the processing liquid to the processing tank 3. Specifically, the liquid supply unit 5 supplies the rinse liquid (DIW) and dIPA to the processing tank 3. More specifically, the liquid supply unit 5 includes a ninth nozzle 19 and a tenth nozzle 20. The ninth nozzle 19 and the tenth nozzle 20 are disposed inside the processing tank 3. As will be described with reference to FIG. 2, the ninth nozzle 19 and the tenth nozzle 20 discharge the rinse liquid (DIW) and dIPA.

[0043] The holding unit 50 holds a plurality of substrates W. Specifically, the holding unit 50 includes a plurality of holding bars 51 and a main body plate 52. In the present embodiment, the holding unit 50 has three holding bars 51. The main body plate 52 is a plate-shaped member extending in the vertical direction (Z direction). Each of the holding bars 51 extends in the horizontal direction (X direction) from one main surface of the main body plate 52. The lower edges of the plurality of substrates W respectively abut against the plurality (here, three) of holding bars 51. The plurality of substrates W are held in an upright posture (vertical posture) in a state of being aligned at intervals in the X direction.

[0044] The opening / closing unit 102 opens and closes the cover 2a. That is, the opening / closing unit 102 causes the cover 2a to transition between an open state and a closed state. When the cover 2a opens and closes, the opening at the upper part of the chamber 2 transitions between a closed state and an open state. The opening / closing unit 102 includes a drive source and an opening / closing mechanism, and drives the opening / closing mechanism by the drive source to open and close the cover 2a. The drive source includes, for example, a motor. The opening / closing mechanism includes, for example, a rack and pinion mechanism.

[0045] The elevating unit 103 raises and lowers the holding unit 50. When the elevating unit 103 raises and lowers the holding unit 50, the substrate W held by the holding unit 50 is raised and lowered. The elevating unit 103 includes a drive source and an elevating mechanism, and drives the elevating mechanism by the drive source to raise and lower the holding unit 50. The drive source includes, for example, a motor. The elevating mechanism includes, for example, a rack and pinion mechanism or a ball screw.

[0046] Specifically, the elevating unit 103 moves (elevates and lowers) the holding unit 50 (substrate W) between the outside and inside of the chamber 2 through the opening at the upper part of the chamber 2. That is, the elevating unit 103 carries the substrate W into the chamber 2 and carries the substrate W out of the chamber 2.

[0047] In addition, the elevating unit 103 moves (elevates and lowers) the holding unit 50 (substrate W) between the first processing position inside the processing tank 3 and the second processing position outside the processing tank 3 within the chamber 2. When the holding unit 50 moves to the first processing position, the substrate W moves into the processing tank 3. When the holding unit 50 moves to the second processing position, the substrate W moves out of the processing tank 3. Specifically, the second processing position is a position above the first processing position. When the holding unit 50 moves to the second processing position, the substrate W moves into the space above the processing tank 3. The elevating unit 103 is an example of a moving unit. Note that in FIG. 1, the holding unit 50 and the substrate W that have moved to the first processing position are shown by solid lines, and the holding unit 50 and the substrate W that have moved to the second processing position are shown by dashed lines.

[0048] Subsequently, the substrate processing apparatus 100 will be further described with reference to FIG. 1. As shown in FIG. 1, the substrate processing apparatus 100 further includes a control device 110. The control device 110 controls the operations of each part of the substrate processing apparatus 100. Specifically, the control device 110 includes a control unit 111 and a storage unit 112.

[0049] The control unit 111 has a processor. The control unit 111 has, for example, a CPU (Central Processing Unit) or an MPU (Micro Processing Unit). Alternatively, the control unit 111 may have a general-purpose arithmetic unit.

[0050] The storage unit 112 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure of the substrate W.

[0051] The storage unit 112 has a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 112 may further have an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 112 may include a removable medium. The control unit 111 controls the operations of each part of the substrate processing apparatus 100 based on the computer programs and data stored in the storage unit 112.

[0052] The control device 110 (control unit 111) controls the opening / closing unit 102 to transition the cover 2a between the open state and the closed state. Specifically, the control device 110 (control unit 111) opens the cover 2a when loading the substrate W into the chamber 2 and when unloading the substrate W from the chamber 2. When the cover 2a is in the open state, the upper opening of the chamber 2 is in an open state, enabling the loading of the substrate W into the chamber 2 and the unloading of the substrate W from the chamber 2. The control device 110 (control unit 111) closes the cover 2a during the processing of the substrate W. When the cover 2a is in the closed state, the upper opening of the chamber 2 is in a closed state. As a result, the inside of the chamber 2 becomes a sealed space. The substrate W is processed within the sealed space.

[0053] The control device 110 (control unit 111) controls the elevating unit 103 to raise and lower the holding unit 50 (substrate W). Specifically, the control device 110 (control unit 111) moves the holding unit 50 from the outside to the inside of the chamber 2 through the upper opening of the chamber 2 to load the substrate W into the chamber 2 when loading the substrate W into the chamber 2. The control device 110 (control unit 111) moves the holding unit 50 from the inside to the outside of the chamber 2 through the upper opening of the chamber 2 to unload the substrate W from the chamber 2 when unloading the substrate W from the chamber 2. The control device 110 (control unit 111) moves (raises and lowers) the holding unit 50 between the first processing position and the second processing position within the chamber 2 during the processing of the substrate W.

[0054] Next, the substrate processing apparatus 100 will be further described with reference to FIG. 2. As shown in FIG. 2, the substrate processing apparatus 100 further includes an inert gas supply source 21, an IPA supply source 22, a water-repellent agent supply source 23, a DIW supply source 24, a decompression unit 25, first to seventh pipes 31 to 37, a drain line 41, an exhaust line 42, first to eighth valves V1 to V8, a first heater H1, and a second heater H2.

[0055] The inert gas supply source 21 supplies an inert gas. The inert gas is, for example, nitrogen gas. The IPA supply source 22 supplies IPA. The water-repellent agent supply source 23 supplies the water-repellent agent SMT. The DIW supply source 24 supplies DIW.

[0056] The first pipe 31 is supplied with the inert gas from the inert gas supply source 21. The first pipe 31 circulates the inert gas supplied from the inert gas supply source 21 to the first nozzle 11 and the second nozzle 12.

[0057] The first nozzle 11 and the second nozzle 12 are hollow tubular members. A plurality of discharge holes are formed in each of the first nozzle 11 and the second nozzle 12. In the present embodiment, the first nozzle 11 and the second nozzle 12 extend in the X direction. The plurality of discharge holes of the first nozzle 11 are formed at equal intervals in the X direction. Similarly, the plurality of discharge holes of the second nozzle 12 are formed at equal intervals in the X direction.

[0058] When the inert gas is supplied to the first nozzle 11 through the first pipe 31, the inert gas is discharged from the plurality of discharge holes of the first nozzle 11 into the interior of the chamber 2. Similarly, when the inert gas is supplied to the second nozzle 12 through the first pipe 31, the inert gas is discharged from the plurality of discharge holes of the second nozzle 12 into the interior of the chamber 2.

[0059] A first valve V1 is installed in the first pipe 31. The first valve V1 is an on-off valve that opens and closes the flow path of the first pipe 31. The first valve V1 controls the flow of the inert gas flowing through the first pipe 31. Specifically, when the first valve V1 opens, the inert gas flows through the first pipe 31 to the first nozzle 11 and the second nozzle 12. As a result, the inert gas is discharged from the first nozzle 11 and the second nozzle 12. When the first valve V1 closes, the flow of the inert gas is blocked, and the discharge of the inert gas by the first nozzle 11 and the second nozzle 12 stops.

[0060] The first valve V1 also functions as a regulating valve that adjusts the flow rate of the inert gas flowing through the first pipe 31. The first valve V1 is, for example, an electromagnetic valve. The first valve V1 is controlled by a control device 110 (control unit 111).

[0061] IPA is supplied from an IPA supply source 22 to the second pipe 32. A first heater H1 is installed in the second pipe 32. The first heater H1 heats the IPA and vaporizes the IPA. That is, the first heater H1 generates vapor of the IPA. The second pipe 32 allows the vapor of the IPA to flow to the third nozzle 13 and the fourth nozzle 14.

[0062] The third nozzle 13 and the fourth nozzle 14 are arranged below the first nozzle 11 and the second nozzle 12. The configurations of the third nozzle 13 and the fourth nozzle 14 are the same as those of the first nozzle 11 and the second nozzle 12. Similar to the first nozzle 11 and the second nozzle 12, the third nozzle 13 and the fourth nozzle 14 discharge the vapor of the IPA into the chamber 2.

[0063] A second valve V2 is installed in the second pipe 32. The second valve V2 is an on-off valve that opens and closes the flow path of the second pipe 32. The second valve V2 is provided downstream of the first heater H1 with respect to the second pipe 32. Similar to the first valve V1, the second valve V2 controls the flow of the vapor of IPA flowing through the second pipe 32. The second valve V2 also functions as a regulating valve that adjusts the flow rate of the vapor of IPA flowing through the second pipe 32. The second valve V2 is, for example, a solenoid valve. The second valve V2 is controlled by the control device 110 (control unit 111).

[0064] An inert gas is supplied from the inert gas supply source 21 to the third pipe 33. The third pipe 33 is connected to the second pipe 32. That is, the third pipe 33 allows the inert gas to flow to the second pipe 32.

[0065] A third valve V3 is installed in the third pipe 33. The third valve V3 is an on-off valve that opens and closes the flow path of the third pipe 33. Similar to the first valve V1, the third valve V3 controls the flow of the inert gas flowing through the third pipe 33. The third valve V3 also functions as a regulating valve that adjusts the flow rate of the inert gas flowing through the third pipe 33. The third valve V3 is, for example, a solenoid valve. The third valve V3 is controlled by the control device 110 (control unit 111).

[0066] When the control device 110 (control unit 111) discharges the vapor of IPA from the third nozzle 13 and the fourth nozzle 14, it opens the second valve V2 and closes the third valve V3. On the other hand, when the control device 110 (control unit 111) discharges the inert gas from the third nozzle 13 and the fourth nozzle 14, it closes the second valve V2 and opens the third valve V3. When the third valve V3 opens, the inert gas flows from the third pipe 33 into the second pipe 32, and the inert gas is supplied to the third nozzle 13 and the fourth nozzle 14 through the second pipe 32. As a result, the inert gas is discharged from the third nozzle 13 and the fourth nozzle 14 into the interior of the chamber 2.

[0067] An inert gas is supplied from an inert gas supply source 21 to a fourth pipe 34. The fourth pipe 34 allows the inert gas supplied from the inert gas supply source 21 to flow to a fifth nozzle 15 and a sixth nozzle 16.

[0068] The fifth nozzle 15 and the sixth nozzle 16 are disposed below the third nozzle 13 and the fourth nozzle 14. The configurations of the fifth nozzle 15 and the sixth nozzle 16 are the same as those of the first nozzle 11 and the second nozzle 12. Similar to the first nozzle 11 and the second nozzle 12, the fifth nozzle 15 and the sixth nozzle 16 discharge an inert gas into the chamber 2.

[0069] A fourth valve V4 is interposed in the fourth pipe 34. The fourth valve V4 is an on-off valve that opens and closes the flow path of the fourth pipe 34. Similar to the first valve V1, the fourth valve V4 controls the flow of the inert gas flowing through the fourth pipe 34. The fourth valve V4 also functions as a regulating valve for adjusting the flow rate of the inert gas flowing through the fourth pipe 34. The fourth valve V4 is, for example, a solenoid valve. The fourth valve V4 is controlled by a control device 110 (control unit 111).

[0070] A water-repellent agent SMT is supplied from a water-repellent agent supply source 23 to a fifth pipe 35. A second heater H2 is interposed in the fifth pipe 35. The second heater H2 heats the water-repellent agent SMT to vaporize the water-repellent agent SMT. That is, the second heater H2 generates vapor of the water-repellent agent SMT. The fifth pipe 35 allows the vapor of the water-repellent agent SMT to flow to a seventh nozzle 17 and an eighth nozzle 18.

[0071] The seventh nozzle 17 and the eighth nozzle 18 are disposed below the fifth nozzle 15 and the sixth nozzle 16. The configurations of the seventh nozzle 17 and the eighth nozzle 18 are the same as those of the first nozzle 11 and the second nozzle 12. Similar to the first nozzle 11 and the second nozzle 12, the seventh nozzle 17 and the eighth nozzle 18 discharge the vapor of the water-repellent agent SMT into the chamber 2.

[0072] A fifth valve V5 is installed in the fifth pipe 35. The fifth valve V5 is an on-off valve that opens and closes the flow path of the fifth pipe 35. The fifth valve V5 is provided downstream of the second heater H2 with respect to the fifth pipe 35. Similar to the first valve V1, the fifth valve V5 controls the flow of the vapor of the water-repellent agent SMT flowing through the fifth pipe 35. The fifth valve V5 also functions as a regulating valve that adjusts the flow rate of the vapor of the water-repellent agent SMT flowing through the fifth pipe 35. The fifth valve V5 is, for example, a solenoid valve. The fifth valve V5 is controlled by the control device 110 (control unit 111).

[0073] DIW is supplied from the DIW supply source 24 to the sixth pipe 36. The sixth pipe 36 circulates the DIW supplied from the DIW supply source 24 to the ninth nozzle 19 and the tenth nozzle 20.

[0074] The configurations of the ninth nozzle 19 and the tenth nozzle 20 are the same as those of the first nozzle 11 and the second nozzle 12. By supplying DIW to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36, DIW is discharged from the ninth nozzle 19 and the tenth nozzle 20 into the processing tank 3.

[0075] A sixth valve V6 is installed in the sixth pipe 36. The sixth valve V6 is an on-off valve that opens and closes the flow path of the sixth pipe 36. Similar to the first valve V1, the sixth valve V6 controls the flow of the DIW flowing through the sixth pipe 36. The sixth valve V6 also functions as a regulating valve that adjusts the flow rate of the DIW flowing through the sixth pipe 36. The sixth valve V6 is, for example, a solenoid valve. The sixth valve V6 is controlled by the control device 110 (control unit 111).

[0076] IPA is supplied from the IPA supply source 22 to the seventh pipe 37. The seventh pipe 37 is connected to the sixth pipe 36. That is, the seventh pipe 37 circulates the IPA to the sixth pipe 36.

[0077] A seventh valve V7 is installed in the seventh pipe 37. The seventh valve V7 is an on-off valve that opens and closes the flow path of the seventh pipe 37. Similar to the first valve V1, the seventh valve V7 controls the flow of IPA flowing through the seventh pipe 37. The seventh valve V7 also functions as a regulating valve for adjusting the flow rate of IPA flowing through the seventh pipe 37. The seventh valve V7 is, for example, a solenoid valve. The seventh valve V7 is controlled by a control device 110 (control unit 111).

[0078] When storing DIW in the processing tank 3, the control device 110 (control unit 111) opens the sixth valve V6 and closes the seventh valve V7. As a result, DIW is discharged into the processing tank 3 from the ninth nozzle 19 and the tenth nozzle 20.

[0079] On the other hand, when storing dIPA in the processing tank 3, the control device 110 (control unit 111) opens the sixth valve V6 and the seventh valve V7. When the sixth valve V6 and the seventh valve V7 are opened, IPA flows from the seventh pipe 37 into the sixth pipe 36, and the IPA merges with the DIW flowing through the sixth pipe 36, and dIPA is generated in the sixth pipe 36. The dIPA is supplied to the ninth nozzle 19 and the tenth nozzle 20 via the sixth pipe 36. As a result, dIPA is discharged into the processing tank 3 from the ninth nozzle 19 and the tenth nozzle 20.

[0080] Further, the control device 110 (control unit 111) adjusts the opening degrees of the sixth valve V6 and the seventh valve V7 so that the concentration of IPA in the dIPA becomes a predetermined concentration. The predetermined concentration is 0.3% or more and less than 5%.

[0081] The drain line 41 is connected to the bottom of the processing tank 3. An eighth valve V8 is interposed in the drain line 41. The eighth valve V8 is an on-off valve that opens and closes the flow path of the drain line 41. The eighth valve V8 is, for example, a solenoid valve. The eighth valve V8 is controlled by the control device 110 (control unit 111). When storing the processing liquid in the processing tank 3, the control device 110 (control unit 111) closes the eighth valve V8. On the other hand, when discharging the processing liquid from the processing tank 3, the control device 110 (control unit 111) opens the eighth valve V8. When the eighth valve V8 opens, the processing liquid stored in the processing tank 3 is discharged from the processing tank 3 to the outside of the chamber 2 through the drain line 41.

[0082] The decompression unit 25 reduces the pressure inside the chamber 2. That is, the decompression unit 25 decompresses the inside of the chamber 2. The decompression unit 25 includes, for example, an exhaust pump. The exhaust pump is, for example, a vacuum pump. The decompression unit 25 is controlled by the control device 110 (control unit 111). Specifically, the decompression unit 25 is connected to the chamber 2 through the exhaust line 42. When the cover 2a is in the closed state, the decompression unit 25 exhausts the gas inside the chamber 2 and decompresses the inside of the chamber 2 to less than atmospheric pressure.

[0083] Subsequently, with reference to FIGS. 1 to 9, the substrate processing apparatus 100 and the substrate processing method of the present embodiment will be described. The substrate processing method of the present embodiment is executed by the substrate processing apparatus 100 described with reference to FIGS. 1 and 2. FIGS. 3 to 9 are flowcharts showing the substrate processing method of the present embodiment. Specifically, FIGS. 3 to 9 show the processing sequence executed by the substrate processing apparatus 100. As shown in FIGS. 3 to 9, the substrate processing method (processing sequence) of the present embodiment includes steps S1 to S21.

[0084] First, as shown in FIG. 3, in step S1, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W carried into the chamber 2 in the DIW stored in the processing tank 3.

[0085] Inside chamber 2, the substrate W after the etching process (after the wet etching process) is carried in. By immersing the substrate W after the etching process in DIW, the etching solution adhering to the surface of the substrate W is rinsed with DIW.

[0086] In the present embodiment, in step S1, the control device 110 (control unit 111) discharges DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5). As a result, the etching solution is further rinsed with water.

[0087] Also, in step S1, the control device 110 (control unit 111) discharges an inert gas from the third nozzle 13 and the fourth nozzle 14. For example, the control device 110 (control unit 111) starts discharging the inert gas after immersing the substrate W in DIW. At this time, the decompression unit 25 is not driven. Therefore, the internal pressure of chamber 2 is at atmospheric pressure.

[0088] Next, in step S2, the control device 110 (control unit 111) continues to discharge the inert gas. Also, in step S2, the control device 110 (control unit 111) stops discharging DIW from the ninth nozzle 19 and the tenth nozzle 20 (liquid supply unit 5). At this time, the decompression unit 25 is not driven. Therefore, the internal pressure of chamber 2 is at atmospheric pressure.

[0089] Next, in step S3, the control device 110 (control unit 111) continues to discharge the inert gas. Also, in step S3, the control device 110 (control unit 111) drives the decompression unit 25 to exhaust the gas inside chamber 2 through the exhaust line 42. As a result, the inside of chamber 2 is decompressed to less than atmospheric pressure. At this time, the substrate W is immersed in DIW. Therefore, it is possible to avoid the substrate W from drying and the pattern from collapsing.

[0090] Next, as shown in FIG. 4, in step S4, the control device 110 (control unit 111) continues to depressurize the chamber 2. The depressurization of the chamber 2 continues until step S12 (FIG. 6). Also, in step S4, the control device 110 (control unit 111) discharges IPA vapor from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing IPA vapor is formed in the chamber 2. Note that the discharge of IPA vapor continues until step S7 (FIG. 7).

[0091] Next, in step S5, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and pulls up the substrate W from the DIW. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the IPA vapor. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

[0092] Also, in step S5, the control device 110 (control unit 111) opens the eighth valve V8 and discharges the DIW from the processing tank 3 through the drain line 41. Note that the open state of the eighth valve V8 is maintained until step S13 (FIG. 7).

[0093] According to the present embodiment, in step S5, replacement from water droplets to IPA droplets can be performed under reduced pressure. Therefore, compared with the case of performing it under atmospheric pressure, replacement from water droplets to IPA droplets can be performed in a shorter time.

[0094] Next, in step S6, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and moves the substrate W into the processing tank 3. At this time, no DIW remains in the processing tank 3.

[0095] Next, as shown in FIG. 5, in step S7, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and pulls up the substrate W from the processing tank 3. Also, in step S7, the control device 110 (control unit 111) discharges the vapor of the water-repellent agent SMT from the seventh nozzle 17 and the eighth nozzle 18. Note that the reason for discharging the vapor of IPA and the vapor of the water-repellent agent SMT in step S7 is to suppress fluctuations in the pressure inside the chamber 2.

[0096] Next, in step S8, the control device 110 (control unit 111) continues to discharge the vapor of the water-repellent agent SMT. Also, in step S8, the control device 110 (control unit 111) stops discharging the vapor of IPA. As a result, the droplets of IPA adhering to the substrate W are replaced with droplets of the water-repellent agent SMT, and a water-repellent protective film is formed on the surface of the substrate W. Therefore, the pattern formed on the substrate W is covered with the water-repellent protective film (water-repellent treatment). By covering the pattern with the water-repellent protective film, it is possible to avoid the collapse of the pattern.

[0097] Next, in step S9, the control device 110 (control unit 111) discharges the vapor of IPA from the third nozzle 13 and the fourth nozzle 14. Also, in step S9, the control device 110 (control unit 111) continues to discharge the vapor of the water-repellent agent SMT. The reason for discharging the vapor of IPA and the vapor of the water-repellent agent SMT in step S9 is to suppress fluctuations in the pressure inside the chamber 2.

[0098] Next, as shown in FIG. 6, in step S10, the control device 110 (control unit 111) stops discharging the vapor of the water-repellent agent SMT. Also, in step S10, the control device 110 (control unit 111) continues to discharge the vapor of IPA. As a result, the residue of the water-repellent agent SMT adhering to the substrate W is removed by the vapor of IPA. More specifically, the residue of the water-repellent agent SMT adhering to the substrate W is replaced with droplets of IPA.

[0099] Next, in step S11, the control device 110 (control unit 111) discharges an inert gas from the third nozzle 13 and the fourth nozzle 14.

[0100] Next, in step S12, the control device 110 (control unit 111) continues to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14, and also discharges the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16. As a result, the substrate W dries. In the present embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be increased compared to the case of drying the substrate W under atmospheric pressure. That is, the time required for drying the substrate W can be shortened.

[0101] Next, as shown in FIG. 7, in step S13, the control device 110 (control unit 111) continues to discharge the inert gas from the first nozzle 11 to the sixth nozzle 16, and stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

[0102] Next, in step S14, the control device 110 (control unit 111) stops discharging the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16, while continuing to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14.

[0103] Also, in step S14, after closing the eighth valve V8, the control device 110 (control unit 111) discharges dIPA from the ninth nozzle 19 and the tenth nozzle 20 to store dIPA in the processing tank 3. At this time, the internal pressure of the chamber 2 is atmospheric pressure. Therefore, dIPA can be easily stored in the processing tank 3.

[0104] Next, in step S15, the control device 110 (control unit 111) stops discharging dIPA. Also, in step S15, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated due to the reaction between the residue of the water-repellent agent SMT adhering to the substrate W and IPA are removed by the dIPA. Specifically, the particles generated due to the reaction between the water-repellent agent SMT and IPA dissolve in the water contained in the dIPA.

[0105] Also, in step S15, while the control device 110 (control unit 111) continues to discharge the inert gas, it drives the decompression unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure inside the chamber 2 is reduced to less than atmospheric pressure. The decompression inside the chamber 2 continues until step S19 (FIG. 9).

[0106] Note that in step S15, the control device 110 (control unit 111) may continue to discharge dIPA. By continuing to discharge dIPA, the particles generated due to the reaction between the water-repellent agent SMT and IPA can be removed more effectively.

[0107] Also, in step S15, while the substrate W is immersed in the dIPA, the control device 110 (control unit 111) may swing the holding unit 50 in the vertical direction. Thereby, the particles generated due to the reaction between the water-repellent agent SMT and IPA can be removed more effectively.

[0108] Next, as shown in FIG. 8, in step S16, the control device 110 (control unit 111) discharges the vapor of IPA from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing the vapor of IPA is formed inside the chamber 2.

[0109] Next, in step S17, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position and lifts the substrate W from the dIPA (lifting step). As a result, the droplets of dIPA adhering to the substrate W are removed by the vapor of IPA. More specifically, the droplets of dIPA adhering to the substrate W are replaced with droplets of IPA.

[0110] Also, in step S17, the control device 110 (control unit 111) opens the eighth valve V8 and discharges dIPA from the processing tank 3 through the drain line 41. Note that the open state of the eighth valve V8 is maintained until step S21 (FIG. 9).

[0111] According to the present embodiment, in step S17, the replacement of the dIPA droplets with IPA droplets can be performed under reduced pressure. Therefore, compared with the case of performing the replacement under atmospheric pressure, the replacement of the dIPA droplets with IPA droplets can be performed in a shorter time.

[0112] Next, in step S18, the control device 110 (control unit 111) discharges an inert gas from the third nozzle 13 and the fourth nozzle 14.

[0113] Next, as shown in FIG. 9, in step S19, the control device 110 (control unit 111) continues to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14, and also discharges the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16 (drying step). As a result, the substrate W is dried.

[0114] In the present embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be increased compared with the case of drying the substrate W under atmospheric pressure.

[0115] Next, in step S20, the control device 110 (control unit 111) continues to discharge the inert gas from the first nozzle 11 to the sixth nozzle 16 and stops the drive of the decompression unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

[0116] Next, in step S21, the control device 110 (control unit 111) stops discharging the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16, while continuing to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14. At this time, the internal pressure of the chamber 2 is atmospheric pressure.

[0117] The first embodiment of the present invention has been described above with reference to FIGS. 1 to 9. According to this embodiment, particles generated due to the reaction between the residue of the water repellent SMT adhering to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

[0118] Further, according to this embodiment, before discharging the vapor of the water repellent SMT, the water droplets adhering to the surface of the substrate W can be replaced with droplets of IPA. Therefore, compared with the case where water droplets adhere to the surface of the substrate W, droplets of the water repellent SMT can be more easily adhered to the surface of the substrate W.

[0119] Further, according to this embodiment, before the drying process (step S19), the droplets of dIPA adhering to the surface of the substrate W can be replaced with droplets of IPA. Since IPA has a smaller surface tension than dIPA, the surface tension of the liquid acting on the pattern during the drying process becomes smaller, and the collapse of the pattern can be further avoided.

[0120] Further, according to this embodiment, a water repellent film can be formed on the surface of the substrate W by discharging the vapor of the water repellent SMT under reduced pressure. Therefore, compared with the case of forming a water repellent film on the surface of the substrate W by discharging the vapor of the water repellent SMT under atmospheric pressure, the water repellent film can be formed more easily.

[0121] [Embodiment 2] Next, Embodiment 2 of the present invention will be described with reference to FIGS. 1, 2, 10, and 11. However, matters different from Embodiment 1 will be described, and descriptions of the same matters as those in Embodiment 1 will be omitted. Different from Embodiment 1, in Embodiment 2, the processes after the rinse treatment with dIPA are performed under atmospheric pressure.

[0122] FIGS. 10 and 11 are flowcharts showing the substrate processing method of the present embodiment. Specifically, FIGS. 10 and 11 show the processing sequence executed by the substrate processing apparatus 100. As shown in FIGS. 10 and 11, the substrate processing method (processing sequence) of the present embodiment includes steps S31 to S36.

[0123] In the present embodiment, the control device 110 (control unit 111) first executes the processes of steps S1 to S14 described in Embodiment 1. Thereafter, as shown in FIG. 10, in step S31, the control device 110 (control unit 111) stops the discharge of dIPA. Also, in step S31, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated due to the reaction between the residue of the water-repellent agent SMT adhering to the substrate W and IPA are removed by the dIPA.

[0124] Also, in step S31, the control device 110 (control unit 111) continues to discharge the inert gas in the same manner as in step S15. On the other hand, different from step S15, the control device 110 (control unit 111) does not drive the decompression unit 25. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. The internal pressure of the chamber 2 is maintained at atmospheric pressure until step S34 (FIG. 11).

[0125] Note that in step S31, the control device 110 (control unit 111) may continue to discharge dIPA in the same manner as in step S15. Also, in step S31, the control device 110 (control unit 111) may swing the holding unit 50 in the vertical direction while keeping the substrate W immersed in the dIPA in the same manner as in step S15.

[0126] Next, in step S32, the control device 110 (control unit 111) discharges IPA vapor from the third nozzle 13 and the fourth nozzle 14. As a result, an atmosphere containing IPA vapor is formed in the chamber 2.

[0127] Next, in step S33, the control device 110 (control unit 111) moves the holding unit 50 to the second processing position to lift the substrate W from the dIPA (lifting step). Also, in step S33, the control device 110 (control unit 111) opens the eighth valve V8 to discharge dIPA from the processing tank 3 through the drain line 41. Note that the open state of the eighth valve V8 is maintained until step S36 (FIG. 11).

[0128] Next, as shown in FIG. 11, in step S34, the control device 110 (control unit 111) continues to discharge IPA vapor. As a result, the droplets of dIPA adhering to the substrate W are removed by the IPA vapor.

[0129] Next, in step S35, the control device 110 (control unit 111) drives the decompression unit 25 to exhaust the gas in the chamber 2 through the exhaust line 42. As a result, the pressure in the chamber 2 is reduced to less than atmospheric pressure. Also, in step S35, the control device 110 (control unit 111) discharges an inert gas from the third nozzle 13 and the fourth nozzle 14 to dry the substrate W (drying step).

[0130] In this embodiment, the substrate W is dried under reduced pressure. By drying the substrate W under reduced pressure, the drying efficiency can be increased compared to the case where the substrate W is dried under atmospheric pressure.

[0131] Next, in step S36, the control device 110 (control unit 111) continues to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14, and also discharges the inert gas from the first nozzle 11, the second nozzle 12, the fifth nozzle 15, and the sixth nozzle 16. Further, in step S36, the control device 110 (control unit 111) stops driving the pressure reducing unit 25. As a result, the internal pressure of the chamber 2 returns to atmospheric pressure.

[0132] According to the present embodiment, by discharging the inert gas from the first nozzle 11 to the sixth nozzle 16, the internal pressure of the chamber 2 can be efficiently returned to atmospheric pressure.

[0133] As described above, the second embodiment of the present invention has been described with reference to FIGS. 1, 2, 10, and 11. According to the present embodiment, particles generated due to the reaction between the residue of the water repellent SMT attached to the substrate W and IPA can be removed by dIPA. Therefore, the cleanliness of the substrate W can be improved.

[0134] [Embodiment 3] Subsequently, the third embodiment of the present invention will be described with reference to FIGS. 1, 2, and 12 to 15. However, matters different from those in the first and second embodiments will be described, and descriptions of the same matters as those in the first and second embodiments will be omitted. Different from the first and second embodiments, the third embodiment performs the treatment under atmospheric pressure.

[0135] FIGS. 12 to 15 are flowcharts showing the substrate processing method of the present embodiment. Specifically, FIGS. 12 to 15 show the processing sequence executed by the substrate processing apparatus 100. As shown in FIGS. 12 to 15, the substrate processing method (processing sequence) of the present embodiment includes steps S41 to S52.

[0136] First, as shown in FIG. 12, in steps S41 and S42, the control device 110 (control unit 111) performs the same processes as steps S1 and S2 described in Embodiment 1. Since the processes of steps S41 and S42 are the same as those of steps S1 and S2 described in Embodiment 1, the description thereof is omitted.

[0137] Next, in step S43, the control device 110 (control unit 111) continues to discharge the inert gas from the third nozzle 13 and the fourth nozzle 14 in the same manner as in step S3 described in Embodiment 1. On the other hand, in step S43, unlike step S3 described in Embodiment 1, the control device 110 (control unit 111) does not drive the pressure reducing unit 25. Therefore, the internal pressure of the chamber 2 is maintained at atmospheric pressure. The internal pressure of the chamber 2 is maintained at atmospheric pressure until step S52 (FIG. 15).

[0138] Next, as shown in FIG. 13, in steps S44 and S45, the control device 110 (control unit 111) performs the same processes as steps S4 and S5 described in Embodiment 1. Since the processes of steps S44 and S45 are the same as those of steps S4 and S5 described in Embodiment 1 except that they are performed under atmospheric pressure, the description thereof is omitted. Note that the control device 110 (control unit 111) opens the eighth valve V8 in step S45 to discharge DIW from the processing tank 3 through the drain line 41. The open state of the eighth valve V8 is maintained until step S50 (FIG. 15).

[0139] Next, in step S46, the control device 110 (control unit 111) continues to discharge the vapor of IPA and maintains the position of the holding unit 50 at the second processing position. As a result, the water droplets (DIW droplets) adhering to the substrate W are removed by the vapor of IPA. More specifically, the water droplets adhering to the substrate W are replaced with IPA droplets.

[0140] Next, as shown in FIG. 14, in steps S47 to S49, the control device 110 (control unit 111) performs the same processing as steps S7 to S9 described in Embodiment 1. Since the processing in steps S47 to S49 is the same as that in steps S7 to S9 described in Embodiment 1 except that it is performed under atmospheric pressure, the description thereof is omitted.

[0141] Next, as shown in FIG. 15, in step S50, the control device 110 (control unit 111) performs the same processing as step S10 described in Embodiment 1. Since the processing in step S50 is the same as that in step S10 described in Embodiment 1 except that it is performed under atmospheric pressure, the description thereof is omitted.

[0142] Next, in step S51, the control device 110 (control unit 111) continues to discharge the vapor of IPA. Also, in step S51, after closing the eighth valve V8, the control device 110 (control unit 111) discharges dIPA from the ninth nozzle 19 and the tenth nozzle 20 to store dIPA in the processing tank 3. At this time, the internal pressure of the chamber 2 is atmospheric pressure. Therefore, dIPA can be easily stored in the processing tank 3.

[0143] Next, in step S52, the control device 110 (control unit 111) stops discharging dIPA. Also, in step S52, the control device 110 (control unit 111) moves the holding unit 50 to the first processing position and immerses the substrate W in the dIPA stored in the processing tank 3 (immersion step). As a result, the particles generated due to the reaction between the residue of the water repellent SMT attached to the substrate W and IPA are removed by the dIPA. Also, in step S52, the control device 110 (control unit 111) continues to discharge the vapor of IPA.

[0144] Thereafter, the control device 110 (control unit 111) executes the processing of steps S33 to S36 described in Embodiment 2.

[0145] Note that in step S52, the control device 110 (control unit 111) may continue to discharge dIPA in the same manner as in step S15. Further, in step S52, the control device 110 (control unit 111) may swing the holding unit 50 in the vertical direction while maintaining the state in which the substrate W is immersed in dIPA, in the same manner as in step S15.

[0146] As described above, Embodiment 3 of the present invention has been described with reference to FIGS. 1, 2, and 12 to 15. According to this embodiment, similarly to Embodiments 1 and 2, the cleanliness of the substrate W can be improved. Further, according to this embodiment, in order to maintain the internal pressure of the chamber 2 at atmospheric pressure, after removing the residue of the water repellent SMT adhering to the substrate W with the vapor of IPA (after step S50), dIPA can be supplied into the treatment tank 3 without performing the drying process (steps S11 to S13 described in Embodiment 1).

[0147] As described above, the embodiments of the present invention have been described with reference to the drawings (FIGS. 1 to 15). However, the present invention is not limited to the above embodiments, and can be implemented in various aspects without departing from the gist thereof. Further, the plurality of components disclosed in the above embodiments can be modified as appropriate. For example, a certain component among all the components shown in a certain embodiment may be added to the components of another embodiment, or some of the components among all the components shown in a certain embodiment may be deleted from the embodiment.

[0148] The drawings schematically show each component mainly for easy understanding of the invention, and the thickness, length, number, interval, etc. of each illustrated component may be different from the actual ones for convenience of drawing creation. Further, the configuration of each component shown in the above embodiment is an example and is not particularly limited, and it goes without saying that various changes can be made without substantially departing from the effects of the present invention.

[0149] For example, in the embodiment described with reference to FIGS. 1 to 15, the rinsing process of the etching solution by DIW was performed in the processing tank 3 of the drying processing unit 101. However, the rinsing process of the etching solution by DIW may be performed in the processing tank of a processing unit different from the drying processing unit 101. For example, the rinsing process of the etching solution by DIW may be performed in the processing tank of the processing unit for etching the substrate W.

[0150] Also, in the embodiment described with reference to FIGS. 1 to 15, the water repellency treatment was performed in the chamber 2 of the drying processing unit 101. However, the water repellency treatment may be performed in the chamber of a processing unit different from the drying processing unit 101.

[0151] Also, in the embodiment described with reference to FIGS. 1 to 15, when the substrate W was immersed in dIPA, the substrate W was swung in the vertical direction. However, the direction in which the substrate W is swung is not limited to the vertical direction. No matter in which direction the substrate W is swung, the removal of particles can be promoted. For example, when the substrate W is immersed in dIPA, the substrate W may be swung in the horizontal direction.

[0152] Also, in the embodiment described with reference to FIGS. 1, 2, and 12 to 15 (Embodiment 3), after step S52, the processes of steps S33 to S36 described in Embodiment 2 were executed. However, as shown in FIG. 16, the process after step S52 may be performed under reduced pressure. Hereinafter, another embodiment of the present invention will be described with reference to FIG. 16.

[0153] Also, in the embodiment (Embodiment 3) described with reference to FIGS. 1, 2, and 12 to 15, after step S52, the processes of steps S33 to S36 described in Embodiment 2 were executed. However, as shown in FIG. 16, the process after step S52 may be performed under reduced pressure. Hereinafter, another embodiment of the present invention will be described with reference to FIG. 16.

[0154] FIG. 16 is a flowchart showing a substrate processing method according to another embodiment of the present invention. As shown in FIG. 16, the substrate processing method (processing sequence) of the present embodiment includes step S52 and step S61.

[0155] As shown in FIG. 16, after executing the processes of steps S41 to S52 described in Embodiment 3, the control device 110 (control unit 111) may exhaust the gas in the chamber 2 through the exhaust line 42 by driving the decompression unit 25 while continuing to discharge the vapor of IPA in step S61. As a result, the pressure inside the chamber 2 is reduced to less than atmospheric pressure. In other embodiments, after step S61, the processes of steps S17 to S21 described in Embodiment 1 are executed.

Industrial Applicability

[0156] The present invention is useful for a method and an apparatus for processing a substrate.

Explanation of Reference Numerals

[0157] 2: Chamber 3: Processing tank 4: Gas supply unit 5: Liquid supply unit 21: Inert gas supply source 22: IPA supply source 23: Water repellent agent supply source 24: DIW supply source 25: Decompression unit 100: Substrate processing apparatus 101: Processing unit (drying processing unit) 103: Lifting unit 110: Control device 111: Control unit 112: Storage unit W: Substrate

Claims

1. A substrate processing method for processing a substrate, comprising: a step of storing liquid diluted isopropyl alcohol, which is diluted isopropyl alcohol, in a processing tank; a step of supplying a vaporized organic solvent to the water-repellent treated substrate; an immersion step of, after the step of supplying the organic solvent, lowering the substrate having a water-repellent agent remaining on its surface from a position above the processing tank and immersing it in the liquid diluted isopropyl alcohol in the processing tank A substrate processing method comprising:

2. The substrate processing method according to claim 1, further comprising a step of drying the substrate before immersing the water-repellent treated substrate in the diluted isopropyl alcohol in the processing tank.

3. The substrate processing method according to claim 1 or claim 2, wherein in the step of supplying the organic solvent, a vaporized water-repellent agent is supplied into a sealed space accommodating the processing tank to perform a water-repellent treatment on the substrate.

4. a step of immersing the substrate in a rinse liquid stored in the processing tank; a step of pulling up the substrate from the rinse liquid; a step of draining the rinse liquid from the processing tank further comprising: The substrate processing method according to claim 3, wherein the water-repellent treatment is performed after draining the rinse liquid.

5. The substrate processing method according to claim 3 or claim 4, wherein in the step of supplying the organic solvent, a vaporized organic solvent is supplied into the sealed space.

6. The substrate processing method according to any one of claims 3 to 5, wherein the water-repellent treatment is performed by reducing the pressure in the sealed space.

7. The substrate processing method according to claim 6, further comprising a step of returning the pressure in the sealed space to atmospheric pressure before storing the diluted isopropyl alcohol in the processing tank.

8. a pulling-up step of pulling up the substrate from the diluted isopropyl alcohol; a drying step of drying the substrate pulled up from the diluted isopropyl alcohol further comprising: The substrate processing method according to any one of claims 1 to 7.

9. The step of supplying the organic solvent is performed before the pulling-up step, The substrate processing method according to claim 8, wherein the drying step includes a step of supplying an inert gas into a sealed space accommodating the processing tank.

10. The substrate processing method according to claim 8 or claim 9, wherein the drying step is performed by reducing the pressure in a sealed space accommodating the processing tank.

11. The substrate processing method according to any one of claims 1 to 10, wherein in the immersion step, the diluted isopropyl alcohol is supplied to the processing tank.

12. The substrate processing method according to any one of claims 1 to 11, wherein in the immersion step, the substrate is vibrated.

13. The substrate processing method according to any one of claims 1 to 12, wherein in the diluted isopropyl alcohol, the concentration of isopropyl alcohol is 0.3% or more and less than 5%.

14. A substrate processing apparatus for processing a substrate, a processing tank for storing a liquid diluted isopropyl alcohol which is a diluted isopropyl alcohol, a chamber for housing the processing tank, a moving unit for moving the substrate between a first processing position in the processing tank and a second processing position outside the processing tank in the chamber, a nozzle for supplying a vaporized organic solvent to the substrate subjected to the water-repellent treatment, a control unit for controlling the moving unit to lower the substrate having a water-repellent agent remaining on its surface from a position above the processing tank and immerse it in the liquid diluted isopropyl alcohol in the processing tank and comprising a substrate processing apparatus.

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