Substrate processing apparatus, substrate processing method, and program

Abstract

When a plurality of substrates are loaded into a boat and are subjected to batch processing, in order to enable improved uniformity of film thickness among the plurality of substrate as compared to prior art, a substrate processing device according to the present invention comprises: a processing container which can accommodate a substrate holder that holds processing target substrates; a gas supply part which supplies a gas to the processing container; a discharge part which evacuates the atmosphere inside the processing container; a conveyance part which conveys the processing target substrates; and a control part which, when there is a first region for distributed loading toward the center of the substrate holder and the number X of processing target substrates is smaller than the maximum loading number Y of the substrate holder, can control the conveyance part such that distributed loading of the processing target substrates from the center of the first region is performed.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, Substrate processing a method, and a program.

Background Art

[0002] As one step of the manufacturing process of a semiconductor device (device), a process of forming a film on a substrate housed in a processing chamber may be performed. As an apparatus for forming a film on this substrate, there is, for example, one described in Patent Document 1.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In recent years, with the high integration and three-dimensional structuring of semiconductor devices, their surface area has been steadily increasing. In the semiconductor manufacturing process, so-called loading effects such as film thickness variations of the film formed on the substrate, caused by the large surface area, have become serious problems, and a thin film forming technology that eliminates such effects is desired. As one method to meet such requirements, there is a method of forming a film by alternately supplying a plurality of processing gases.

[0005] The method of alternately supplying a plurality of processing gases to form a film is an effective means against the loading effect. However, in the process of a batch processing apparatus in which substrates are loaded onto a boat and a plurality of substrates are loaded and processed simultaneously, the thickness of the film formed on the substrate to be processed varies between substrates depending on the number of substrates loaded, so that its control may be difficult in some cases.

[0006] An object of the present disclosure is to provide a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program that enable improvement in the film thickness uniformity among a plurality of substrates as compared with the conventional case when a plurality of substrates are loaded into a boat and batch-processed.

Means for Solving the Problems

[0007] In the present disclosure, a substrate processing apparatus includes a processing container capable of accommodating a substrate holder holding a substrate to be processed, a gas supply unit that supplies gas to the processing container, an exhaust unit that exhausts the atmosphere in the processing container, a transfer unit that transfers the substrate to be processed, and a first region that is provided on the central side of the substrate holder and is configured to be dispersedly loaded. When the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder, the transfer unit is configured to be controllable to disperse and load the substrates to be processed from the central side of the first region.

Effects of the Invention

[0008] According to the present disclosure, when a plurality of substrates are loaded into a boat and batch-processed, the uniformity of film characteristics among the plurality of substrates can be improved as compared with the conventional case. In addition, the controllability of the film thickness of the film formed on the substrate can be improved.

Brief Description of the Drawings

[0009]

Figure 1

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Figure 9

Embodiments for Carrying Out the Invention

[0010] With the recent high integration and three-dimensional structuring of semiconductor devices, the cases of processing substrates having patterns formed on the surface by a laminate (aggregate) with a predetermined layer or film are increasing.

[0011] In a batch processing apparatus that processes a plurality of substrates simultaneously, when loading and processing a small number of large surface area substrates in a substrate holder (boat) for loading a plurality of substrates, which is less than the maximum number of substrates that can be loaded (processed), in order to simplify the substrate transfer pattern and shorten the transfer time, it is common to load them together in one area of the substrate holder (boat).

[0012] For example, when processing 25 substrates in a vertical batch processing apparatus using a substrate holder (boat) that can process 100 substrates at once, load 25 substrates continuously by loading them sequentially from the upper stage to the lower stage of the substrate holder, or load them from the lower stage to the upper stage sequentially, or load 25 substrates continuously near the central part of the substrate holder. In that case, the film thickness around the slot where the substrate is loaded may become thinner compared to the periphery of the slot where no substrate is loaded.

[0013] That is, in the region for loading 100 substrates in a substrate holder (boat), the film thickness varies depending on the location where the substrates are loaded, resulting in deterioration of the film thickness uniformity between the loading regions. Furthermore, even in the case of 25 continuously loaded substrates, when comparing the film thickness of the film formed on the substrate loaded at the end among the 25 substrates with the film thickness of the film formed on the substrate loaded at the center, the latter is thinner. That is, there is a problem that the uniformity of the film characteristics (e.g., film thickness) for each substrate in 25 continuously loaded substrates deteriorates.

[0014] Also, since the total surface area of the substrate group changes depending on the surface area of the substrate and the number of substrates loaded, the total surface area of the substrate groups loaded between batches changes. Accordingly, the average film thickness of the film formed on the substrate to be processed fluctuates between batches. Even if the same number of cycles of alternately supplying a plurality of processing gases under the same process conditions are performed, the average film thickness of the film formed on the substrate to be processed differs depending on the position loaded in the substrate holder (boat). Thus, when loading and processing substrates in a substrate holder (boat), it may be difficult to control the film thickness between substrates. Note that the substrate to be processed means a substrate (product substrate) on which a device (semiconductor device) is formed. Various patterns (a plurality of unevenness) formed in the formation process of the semiconductor device are formed on the product substrate. Due to this pattern, the product substrate has a larger surface area than a substrate on which no pattern is formed.

[0015] The present disclosure solves the above-described problems. When loading substrates less than the maximum loadable number into a substrate holder (boat), by dispersedly loading (dispersed charge) the substrates into the slots of the substrate holder, it is possible to obtain desired film characteristic (e.g., film thickness) uniformity for the films formed on the substrates loaded in any slot.

[0016] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In all the drawings for explaining this embodiment, those having the same function are denoted by the same reference numerals, and repeated explanations thereof are omitted in principle. Note that the drawings used in the following explanations are all schematic, and the dimensional relationships of each element shown in the drawings, the ratios of each element, etc. do not necessarily match the actual ones. Also, the dimensional relationships of each element and the ratios of each element do not necessarily match among a plurality of drawings.

[0017] However, the present disclosure is not to be construed as being limited to the description of the embodiments shown below. It will be easily understood by those skilled in the art that the specific configuration can be changed without departing from the spirit or gist of the present disclosure.

Example

[0018] In the example described below, when the number of substrates to be batch-processed is less than the maximum loading number of the boat, an example is shown in which the substrates are loaded so that the density of the substrates loaded in the region farther from the center is higher than that in the region closer to the center in the processing region of the boat. By configuring in this way, the difference between the exposure amount of the processing gas (at least one of the source gas and the reaction gas) to the substrates in the region closer to the center of the boat and the exposure amount of the processing gas to the substrates in the portion away from the center of the boat is reduced, and the uniformity of the processing of each substrate in the boat can be improved. In the present disclosure, the "exposure amount" means the exposure amount of the processing gas to the substrate. Also, it means the amount of gas contributing to the formation of the film. In the present disclosure, the "processing gas" may mean at least one or more of the source gas and the reaction gas. That is, the "exposure amount" means the exposure amount of the source gas, the exposure amount of the reaction gas, and the exposure amount of the source gas and the reaction gas.

[0019] That is, in the embodiments described below, an example is shown in which the density of the substrates loaded in the region including the central portion of the boat is made sparser than the density of the substrates loaded in the portion away from the central portion. By configuring in this way, the difference between the exposure amount of the processing gas to the substrates loaded in the region including the central portion and the exposure amount of the processing gas to the substrates loaded in the portion away from the central portion can be made small.

[0020] Also, in the embodiments described below, an example is shown in which the density of the substrates loaded in the region including the central portion of the boat is made sparser than the density of the substrates loaded in the portion away from the central portion, and dummy substrates are loaded between the substrates. By configuring in this way, the difference between the exposure amount of the processing gas to the substrates sparsely loaded in the region including the central portion and the exposure amount of the processing gas to the substrates densely loaded in the portion away from the central portion can be made small. Here, the dummy substrate is a substrate having a smaller surface area than the product substrate, and may be a substrate on which no pattern is formed or a substrate on which a pattern is formed. Preferably, it is a substrate on which a pattern is formed and has a smaller surface area than the product substrate. In the present disclosure, the dummy substrate is referred to as a small-area substrate.

[0021] (1) Configuration of the substrate processing apparatus The configuration of the substrate processing apparatus 10 will be described with reference to FIGS. 1 to 4. As shown in FIG. 1, the substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating means (heating mechanism, heating system). The heater 207 has a cylindrical shape and is vertically installed by being supported by a heater base (not shown) as a holding plate.

[0022] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end open. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with the upper end and the lower end open.

[0023] An O-ring 220 as a seal member is provided between the upper end of the manifold 209 and the reaction tube 203. Since the manifold 209 is supported by the heater base, the reaction tube 203 is installed vertically with respect to the heater 207. Mainly, the reaction tube 203 and the manifold 209 constitute a processing container (reaction container). A processing chamber 201 is formed in the cylindrical hollow portion of the processing container. The processing chamber 201 is configured to be capable of accommodating a wafer 200 as a substrate in a state where the wafers are arranged in multiple stages in the vertical direction in a horizontal posture by a boat 217 described later.

[0024] In the processing chamber 201, nozzles 410, 336, 337 (see FIG. 2) are provided so as to penetrate the side wall of the manifold 209. A gas supply pipe 516 is connected to the nozzle 410, and a gas supply pipe 335 is connected to the nozzles 336, 337, respectively. The gas supply pipes 335, 516 function as gas supply lines. The nozzles 410, 336, 337 may be considered including in the gas supply line. The processing furnace 202 of the present embodiment is not limited to the above-described form. The number of nozzles and the like can be appropriately changed as needed.

[0025] An exhaust pipe 241 as an exhaust flow path for exhausting the atmosphere in the processing chamber 201 is provided in the reaction tube 203. A pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 242 as an exhaust valve (pressure adjustment unit) are connected to the exhaust pipe 241.

[0026] The APC valve 242 is connected to the vacuum pump 244 via the exhaust pipe 243. The APC valve 242 can perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve with the vacuum pump 244 operating. Further, with the vacuum pump 244 operating, the valve opening degree can be adjusted based on the pressure information detected by the pressure sensor 245, so that the pressure in the processing chamber 201 can be adjusted. Mainly, the exhaust system is composed of the exhaust pipes 241 and 243, the APC valve 242, and the pressure sensor 245. The vacuum pump 244 may also be considered as included in the exhaust system.

[0027] Note that the exhaust part in the present disclosure is composed of at least the exhaust pipe 241. The pressure adjustment part may be considered as a part of the exhaust part.

[0028] Below the manifold 209, a seal cap 219 is provided as a furnace port lid body that can airtightly close the lower end opening of the manifold 209. On the upper surface of the seal cap 219, an O-ring 220 is provided as a seal member that abuts against the lower end of the manifold 209. On the side of the seal cap 219 opposite to the processing chamber 201, a rotation mechanism 267 for rotating the boat 217 described later is installed.

[0029] The rotation shaft 255 of the rotation mechanism 267 penetrates the seal cap 219 and is connected to the boat 217, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be vertically lifted and lowered by a boat elevator 115 as a lifting mechanism vertically installed outside the reaction tube 203.

[0030] The boat elevator 115 is configured to be able to carry the boat 217 into and out of the processing chamber 201 by lifting and lowering the seal cap 219. The boat elevator 115 is configured as a transfer device (transfer mechanism) for transferring the boat 217, that is, the wafer 200, into and out of the processing chamber 201.

[0031] The boat 217 as a substrate support is configured to support multiple wafers 200, for example, 25 to 200 wafers, in a horizontal posture and aligned with each other at the center in a multi-stage manner in the vertical direction, that is, to load (arrange, place) them at intervals. The boat 217 is made of a heat-resistant material such as quartz or SiC, for example.

[0032] A substrate transfer unit (loader) 270 as a transfer unit for transferring, for example, 1 to 5 wafers 200 from a Front Opening Unify Pod: FOUP (not shown) to the substrate support is provided outside the processing chamber 201.

[0033] The A-A cross-section of the reaction tube 203 and the heater 207 in FIG. 1 is shown in FIG. 2. As shown in FIG. 2, a temperature sensor 263 as a temperature detector is installed in the reaction tube 203. By adjusting the energization of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature in the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is configured in an L-shape similar to the nozzles 410, 336, and 337 and is provided along the inner wall of the reaction tube 203.

[0034] The source gas used for the process inside the processing chamber 201 passes through the gas supply pipe 510 from a source gas supply source (not shown), and together with the carrier gas (inert gas) supplied from a carrier gas supply source (not shown), passes through a mass flow controller (MFC) 512. After the flow rate is adjusted, it passes through a valve 514 for turning on and off the gas flow, passes through the gas supply pipe 516, and is supplied into the processing chamber 201 from the nozzle 410 connected at the joint 5161.

[0035] Also, the reaction gas that reacts with the raw material gas inside the processing chamber 201 passes through the gas supply pipe 315 from a reaction gas supply source (not shown), and together with the carrier gas (inert gas) supplied from a carrier gas supply source (not shown), it passes through the mass flow controller (MFC) 317 and is supplied into the processing chamber 201 from the nozzle 410 connected by the joint 5161 through the gas supply pipe 516 with its flow rate adjusted. At this time, the valve 514 on the raw material gas side is in the off state, and only the reaction gas flows inside the gas supply pipe 516.

[0036] On the other hand, an inert gas such as nitrogen (N2) is supplied to the gas supply pipe 335 from an inert gas supply source (not shown), passes through the mass flow controller (MFC) 333 with its flow rate adjusted, passes through the valve 334 that turns the gas flow on and off, branches after passing through the joint 3351, and is supplied into the processing chamber 201 from the nozzles 336 and 337.

[0037] As shown in FIG. 1, the nozzle 410 is configured as an L-shaped nozzle, and its horizontal portion is provided so as to penetrate the side wall of the manifold 209 and the reaction tube 203. As shown in FIG. 2, the vertical portion of the nozzle 410 rises upward in the stacking direction of the wafer 200 along the upper part from the lower part of the inner wall of the reaction tube 203 in an annular space in a plan view between the reaction tube 203 and the wafer 200 and is provided to extend. The nozzles 336 and 337 are also arranged in the same shape as the nozzle 410.

[0038] In the configuration shown in FIG. 1, at the height corresponding to the wafer 200 loaded in the boat 217 on the side surfaces of the nozzles 410, 336, and 337 (the height corresponding to the loading area of the wafer 200), a plurality of gas supply holes 411 for supplying gas are provided at equal pitches on the side of the surface 410a facing the boat 217 as shown in FIG. 3 (view taken along the arrow B-B in FIG. 2). On the other hand, a plurality of gas supply holes 3361 are provided in the lower part of the nozzle 336, and a plurality of gas supply holes 3371 are provided in the upper part of the nozzle 337, respectively.

[0039] In this embodiment, an inert gas is supplied into the reaction tube 203 by using a nozzle 336 provided with a plurality of gas supply holes 3361 at the lower part and a nozzle 337 provided with a plurality of gas supply holes 3371 having a number smaller than that of the gas supply holes 3361 at the upper part in this manner.

[0040] Here, an example in which the number of the gas supply holes 3361 is configured to be larger than that of the gas supply holes 3371 is shown, but a configuration in which the number of the holes is reversed may also be acceptable. Further, here, an example in which the gas supply holes are configured in a round shape is shown, but they may be configured in a slit shape or a rectangular shape. When the slit shape is adopted, the length of the slit is appropriately adjusted. Further, preferably, the position of the upper end of the gas supply hole 3361 is arranged below the processing region 338. Further, preferably, the position of the lower end of the gas supply hole 3371 is arranged above the processing region 338.

[0041] By configuring in this way, the processing gas (at least one or more of a raw material gas and a reaction gas) supplied to the processing region 338 diffuses outside the processing region 338, and the concentration of the gas supplied to each wafer 600 arranged at the position corresponding to the processing region 338 can be made uniform. In other words, dilution of the gas at at least either the upper end or the lower end of the processing region 338 can be suppressed. The number of the gas supply holes 3361 and the number of the gas supply holes 3371 are appropriately set according to the concentration of the gas supplied to the wafers 600 arranged on the upper end side and the lower end side of the processing region 338. Note that the processing region 338 corresponds to the region where the wafers 600 as product wafers are loaded in the boat 217.

[0042] Note that the gas supply part in the present disclosure is composed of at least any one of gas supply pipes. Specifically, it is composed of at least any one of a gas supply pipe 510 through which a raw material gas flows and a gas supply pipe 315 through which a reaction gas flows.

[0043] In the configuration shown in FIG. 3, a plurality of gas supply holes 411 of the nozzle 410 are provided from the lower part to the upper part of the reaction tube 203, each having the same opening area, and are provided at the same opening pitch so as to correspond to the wafer 200 loaded in the boat 217. However, the gas supply holes 411 are not limited to the above-described form. For example, the opening area may be gradually increased from the lower part (upstream side) to the upper part (downstream side) of the nozzle 410. Thereby, it becomes possible to make the flow rate of the gas supplied from the gas supply holes 411 more uniform.

[0044] As shown in FIG. 4, the controller 121, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122 configured as a touch panel or the like and an external storage device 123 are connected to the controller 121.

[0045] The storage device 121c is configured by, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions of substrate processing described later are described, and the like are stored in a readable manner.

[0046] The process recipe is a combination that causes the controller 121 to execute each procedure in the film formation process described later so as to obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. are collectively referred to simply as a program. Also, the process recipe is simply referred to as a recipe.

[0047] When the term "program" is used in this specification, it may include only a process recipe alone, only a control program alone, or a combination thereof. The RAM 121b is configured as a memory area (work area) that temporarily holds programs, data, etc. read by the CPU 121a.

[0048] The I / O port 121d is connected to the above-mentioned MFCs 317, 333, 512, pressure sensor 245, APC valve 242, vacuum pump 244, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, transfer machine 270, etc.

[0049] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like.

[0050] The CPU 121a is configured to control, in accordance with the content of the read recipe, the flow rate adjustment operations of various gases by the MFCs 317, 333, 512, the opening and closing operations of the valves 318, 334, 514, the opening and closing operation of the APC valve 242 and the pressure adjustment operation by the APC valve 242 based on the pressure sensor 245, the start and stop of the vacuum pump 244, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment operations of the boat 217 by the rotation mechanism 267, the lifting and lowering operations of the boat 217 by the boat elevator 115, the substrate transfer operation of the transfer machine 270, etc.

[0051] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a magnetic tape, a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory or a memory card) 123 into a computer.

[0052] The memory device 121c and the external memory device 123 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as recording media. When the term "recording medium" is used in this specification, it may include only the memory device 121c alone, only the external memory device 123 alone, or both of them. Note that the program may be provided to the computer without using the external memory device 123, but by using communication means such as the Internet or a dedicated line.

[0053] (2) Substrate Processing Step (Film Formation Step) Next, as an example of a step of forming a nitride film on a substrate, which is one of the manufacturing steps of a semiconductor device (device) using the substrate processing apparatus described with reference to FIGS. 1 to 4, will be described. The step of forming a nitride film on the substrate is executed using the processing furnace 202 of the substrate processing apparatus 10 described above. In the following description, the operations of each part constituting the substrate processing apparatus 10 are controlled by the controller 121.

[0054] Note that when the term "wafer" is used in this specification, it may mean "the wafer itself" or "a laminate (aggregate) of the wafer and a predetermined layer or film formed on its surface" (that is, when the wafer including a predetermined layer or film formed on the surface is referred to as a wafer). Also, when the term "surface of the wafer" is used in this specification, it may mean "the surface (exposed surface) of the wafer itself" or "the surface of a predetermined layer or film formed on the wafer, that is, the outermost surface of the wafer as a laminate". Note that when the term "substrate" is used in this specification, it has the same meaning as when the term "wafer" is used.

[0055] Hereinafter, the manufacturing method of the semiconductor device according to this embodiment will be described in detail with reference to the flowchart shown in FIG. 5.

[0056] (Process Condition Setting): S501 First, the CPU 121a of the controller 121 reads the process recipe and related databases stored in the storage device 121c and sets the process conditions. Here, at least one or more data, such as data indicating the sizes of the area 610(611) as the first area and the area 620(621) as the second area of the boat 217 described later, and data on the boat loading pattern, are read from the storage device 121c, and based on at least the number of wafers 600 to be loaded into the boat 217, either or both of the sizes of each area and the boat loading pattern are set. Note that the size of each area may specifically be data indicating the size or may be data on the number of wafers 600 to be loaded into each area.

[0057] (Wafer loading): S502 The transfer machine 270 loads a plurality of wafers 200 to be processed in the process recipe into the boat 217.

[0058] A plurality of wafers 200 are carried into the processing chamber 201 (boat load). Specifically, based on the data of the corresponding boat loading pattern for a plurality of wafers 200 (wafer 600 as a product substrate, dummy wafer 602), the transfer machine 270 is controlled to load a plurality of wafers 200 into the boat 217 (wafer charge). After loading into the boat 217, as shown in FIG. 1, the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201. In this state, the seal cap 219 closes the lower end opening of the reaction tube 203 via the O-ring 220.

[0059] (Pressure and temperature adjustment): S503 The inside of the processing chamber 201 is evacuated by the vacuum pump 244 so as to reach a desired pressure (degree of vacuum). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and based on the measured pressure information, the APC valve 242 is feedback-controlled (pressure adjustment). The vacuum pump 244 maintains a state of being constantly operated until at least the processing of the wafer 200 is completed.

[0060] Also, it is heated by the heater 207 so that the inside of the processing chamber 201 reaches a desired temperature. At this time, based on the temperature information detected by the temperature sensor 263, the energization amount to the heater 207 is feedback-controlled (temperature adjustment) so that the inside of the processing chamber 201 has a desired temperature distribution. The heating of the inside of the processing chamber 201 by the heater 207 is continuously performed until at least the processing on the wafer 200 is completed.

[0061] (Film formation step): S504 Thereafter, the raw material gas supply step, the residual gas removal step, the reaction gas supply step, and the residual gas removal step are performed a predetermined number of times in this order.

[0062] (Raw material gas supply step): S5041 Open the valve 514, and flow HCDS (hexachlorodisilane) gas from the gas supply pipe 510 to 516. The HCDS gas is flow rate-adjusted by the MFC 512 and supplied to the wafer 200 from the gas supply hole 411 that opens to the nozzle 410. That is, the wafer 200 is exposed to the HCDS gas. The HCDS gas supplied from the gas supply hole 411 is exhausted from the exhaust pipe 241. At the same time, open the valve 334, and flow N2 gas as an inert gas from the gas supply pipe 335. The N2 gas is flow rate-adjusted by the MFC 333 and supplied from the gas supply hole 3361 of the nozzle 336 to the lower side of the processing chamber 201 and from the gas supply hole 3371 of the nozzle 337 to the upper side of the processing chamber 201, and is exhausted from the exhaust pipe 241.

[0063] At this time, the APC valve 242 is appropriately adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 1330 Pa, preferably 10 to 931 Pa, more preferably 20 to 399 Pa. If it is higher than 1330 Pa, the purge may not be sufficiently performed and by-products may be incorporated into the film, resulting in increased resistance. If it is lower than 1 Pa, the reaction rate of HCDS may not be obtained. In this specification, when a numerical range is described as, for example, 1 to 1000 Pa, it means 1 Pa or more and 1000 Pa or less. That is, 1 Pa and 1000 Pa are included within the numerical range. The same applies to all numerical values described in this specification, not only pressure but also flow rate, time, temperature, etc.

[0064] The supply flow rate of the HCDS gas controlled by the MFC 512 is, for example, in the range of 0.01 to 10 slm, preferably 0.1 to 5.0 slm.

[0065] The N2 gas as the carrier gas is also supplied into the processing chamber 201 from the nozzle 410 through the gas supply pipe 516 after the flow rate is adjusted by an MFC not shown in the figure. The supply flow rate of the N2 gas is, for example, in the range of 0.01 to 50 slm, preferably 0.1 to 20 slm, more preferably 0.2 to 10 slm. That is, it is, for example, in the range of 0 to 49 slm, preferably 0 to 19.3 slm, more preferably 0 to 9.5 slm. If the total flow rate is more than 50 slm, the gas may adiabatically expand and re-liquefy at the gas supply hole 411. When the supply flow rate of the HCDS gas is low with respect to the desired throughput, it is advisable to increase the supply flow rate of the N2 gas. Also, flowing the N2 gas is effective in improving the uniformity of the HCDS gas supplied from the gas supply hole 411.

[0066] The time for supplying the HCDS gas to the wafer 200 is, for example, in the range of 1 to 300 seconds, preferably 1 to 60 seconds, more preferably 1 to 10 seconds. If it is longer than 300 seconds, the throughput deteriorates and the running cost increases. If it is shorter than 1 second, the exposure amount required for film formation may not be obtained.

[0067] The heater 207 maintains the temperature of the wafer 200 at, for example, 200 to 800 °C

[0068] By supplying HCDS gas into the processing chamber 201 under the above conditions, an Si-containing layer is formed on the outermost surface of the wafer 200.

[0069] (Raw material gas exhaust step): S5042 After the Si-containing layer is formed, the valve 514 is closed to stop the supply of HCDS gas. At this time, the APC valve 242 remains open, and the inside of the processing chamber 201 is evacuated by the vacuum pump 244 to remove the unreacted HCDS gas remaining in the processing chamber 201 or the HCDS gas that contributed to the formation of the Si-containing layer from the processing chamber 201. The valve 334 is kept open to maintain the supply of N2 gas into the processing chamber 201. The N2 gas acts as a purge gas and can enhance the effect of removing the unreacted HCDS gas remaining in the processing chamber 201 or the HCDS gas that contributed to the formation of the Si-containing layer from the processing chamber 201.

[0070] (Reaction gas supply step): S5043 After removing the residual gas in the processing chamber 201, the valve 318 is opened, and NH3 gas, which is a reaction gas, is flowed through the gas supply pipe 315. The NH3 gas is flow-rate adjusted by the MFC317 and supplied from the gas supply hole 411 of the nozzle 410 to the wafer 200 in the processing chamber 201, and exhausted from the exhaust pipe 241. That is, the wafer 200 is exposed to the NH3 gas. N2 gas as a carrier gas is also flow-rate adjusted by an MFC (not shown) and then supplied from the nozzle 410 together with the NH3 gas into the processing chamber 201 through the gas supply pipe 315, and exhausted from the exhaust pipe 241.

[0071] At the same time, N2 gas as an inert gas whose flow rate is adjusted by the MFC333 is supplied from the gas supply hole 3361 of the nozzle 336 to the lower side of the processing chamber 201 and from the gas supply hole 3371 of the nozzle 337 to the upper side of the processing chamber 201 through the gas supply pipe 335, and exhausted from the exhaust pipe 241.

[0072] At this time, the APC valve 242 is properly adjusted so that the pressure in the processing chamber 201 is, for example, in the range of 1 to 13,300 Pa, preferably 10 to 2,660 Pa, more preferably 20 to 1,330 Pa. If it is higher than 13,300 Pa, it may take time for the residual gas removal step described later and the throughput may deteriorate. If it is lower than 1 Pa, it may not be possible to obtain the exposure amount required for film formation.

[0073] The supply flow rate of NH3 gas controlled by the MFC 317 is, for example, in the range of 1 to 50 slm, preferably 3 to 20 slm, more preferably 5 to 10 slm. If it is more than 50 slm, it may take time for the residual gas removal step described later and the throughput may deteriorate. If it is less than 1 slm, it may not be possible to obtain the exposure amount required for film formation.

[0074] The supply flow rate of N2 gas supplied as the carrier gas is, for example, in the range of 1 to 50 slm, preferably 3 to 20 slm, more preferably 5 to 10 slm, and is, for example, in the range of 0 to 49 slm, preferably 0 to 17 slm, more preferably 0 to 9.5 slm so that the total flow rate is within the above range. If the total flow rate is more than 50 slm, it may take time for the residual gas removal step described later and the throughput may deteriorate. If it is less than 1 slm, it may not be possible to obtain the exposure amount required for film formation.

[0075] The time for supplying NH3 gas to the wafer 200 is, for example, in the range of 1 to 120 seconds, preferably 5 to 60 seconds, more preferably 5 to 10 seconds. If it is longer than 120 seconds, the throughput deteriorates and the running cost increases. If it is shorter than 1 second, the exposure amount required for film formation may not be obtained. Other processing conditions are the same as those in the above-described raw material gas supply step.

[0076] At this time, the gas flowing in the processing chamber 201 is only NH3 gas and inert gas (N2 gas). The NH3 gas reacts with at least a part of the Si-containing layer formed on the wafer 200 in the raw material gas supply step to form a silicon nitride layer (SiN layer) containing Si and N. That is, the Si-containing layer is modified into an SiN layer.

[0077] (Reaction gas exhaust step): S5044 After the SiN layer is formed, the valve 318 is closed to stop the supply of NH3 gas. Then, in the same processing procedure as the residual gas removal step after the raw material gas supply step, while maintaining the supply of N2 gas into the processing chamber 201 with the valve 334 open, the unreacted or NH3 gas and reaction by-products remaining in the processing chamber 201 after contributing to the formation of the SiN layer are removed from the processing chamber 201.

[0078] (Performed a predetermined number of times): S5045 By performing the cycle of sequentially performing the above-mentioned raw material gas supply step, residual gas removal step, reaction gas supply step, and residual gas supply step one or more times (a predetermined number of times), an SiN film is formed on the wafer 200. The number of times of this cycle is appropriately selected according to the film thickness required for the finally formed SiN film, but it is preferable to repeat this cycle a plurality of times.

[0079] (Purge · Return to atmospheric pressure): S505 When the film formation step is completed, the valve 334 is opened, N2 gas is supplied into the processing chamber 201 from the gas supply pipe 335, and exhausted from the exhaust pipe 241. The N2 gas acts as a purge gas, and the gas and by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (after purge). Then, the atmosphere in the processing chamber 201 is replaced with N2 gas (N2 gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (return to atmospheric pressure).

[0080] (Substrate unloading): S506 Thereafter, the seal cap 219 is lowered by the boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is unloaded (boat unloading) from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the boat 217. After the boat unloading, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). After the processed wafer 200 is unloaded to the outside of the reaction tube 203, it is taken out from the boat 217 (wafer discharge).

[0081] (3) Substrate Loading Subsequently, the dispersed loading of the wafers 200 onto the boat 217, which is performed prior to the film formation process, will be described.

[0082] In the present embodiment, dispersed loading means that when loading the wafers 200 composed of multiple pieces onto the boat 217, not all of the wafers 200 are continuously arranged in the slots of the boat 217. Instead, at least one or more slots where the wafers 200 are not loaded are intentionally provided between the wafers 200 to divide the wafers 200 and load them by dividing the loading slots of the wafers 200 into at least two or more parts. Each group of the divided wafers 200 is referred to as a wafer group. Note that the wafer groups may be continuously loaded into the loading slots. Also, the lower limit number of wafers in a wafer group may be one piece.

[0083] In the present embodiment, when loading and processing less than Y wafers 200 into a boat 217 having Y (Y ≧ 3) wafer loading regions (slots), the wafers 200 are dispersed loaded. Thereby, the distribution of the loading density of the wafers 200 in each slot of the wafer loading region is flattened to improve the film thickness uniformity between surfaces.

[0084] Next, a specific example of the present embodiment will be described with reference to FIGS. 6 to 8. First, the case of improving the film characteristics of each wafer 200 by the dispersed loading of the wafers 200 will be described. Note that the film characteristics are, for example, film thickness, film quality, etc.

[0085] FIG. 6 shows an example in which wafers 600 (corresponding to the wafers 200 in FIGS. 1 and 2) are dispersedly loaded into a boat 217 having 100 wafer loading areas in two areas 610 and 620 with different loading pitches (intervals between the wafers 600). Monitor substrates 601 for monitoring the film thickness of a film formed on a substrate are loaded at both upper and lower ends and the central part of the boat 217. Note that the area 610 corresponds to the first area of the present disclosure, and the area 620 corresponds to the second area. Also, the monitor substrate 601 and the dummy wafers 602 may not be provided. When using the dummy wafers 602, the number of dummy wafers 602 is set according to the number of product substrates (wafers 600) loaded into the area 610 as the first area. The number of dummy wafers 602 is set so as to use the dummy wafers 602 by the number of slots in the area 610 where the wafers 600 are not loaded. In FIG. 6, the processing area 640 corresponds to the area 610 as the first area and the area 620 as the second area.

[0086] In FIG. 6, in the area 610, wafers 600 to be processed are loaded on both sides of a monitor substrate 601 loaded at the central part of the boat 217, and dummy wafers 602 and wafers 600 are alternately loaded outside thereof. Also, in the area 620 near the end of the boat 217 outside the area 610 (the upper and lower parts of the area 610), the wafers 600 are continuously loaded without using the dummy wafers 602. Further, in the area 630 between the area 620 and the location where the monitor substrate 601 at the end of the boat 217 is loaded, only the dummy wafers 602 are loaded without loading the wafers 600. The size of each area (area 610, area 620, area 630) is set according to the total number of wafers 600 loaded into the boat 217.

[0087] The position of area 610 is set to be on the center side of the substrate support (processing area 640). The size of area 610 is set according to the number X of wafers 600 as product substrates. Specifically, when the number X is small, the size of area 610 is increased, and when the number X is large, the size of area 610 is decreased. That is, the size of the first area (area 610) for distributed loading is set according to the number X of wafers 600. In addition, the size of area 620 as the second area is relatively changed according to the size of area 610 as the first area. That is, based on the relationship between X and Y, the ratio of the size of area 610 as the first area and the size of area 620 as the second area is set.

[0088] Data indicating the relationship between X and Y is stored in the table data recorded in the storage device 121c. For example, when the total number X (X is an integer) of wafers 600 as product substrates is the same as the maximum loading number Y (Y is an integer) of the boat 217, the configuration is such that area 610 is not set. When X is close to Y, the size of area 610 as the first area is configured to be smaller than area 620 as the second area. That is, the area for dispersedly loading wafers 600 is configured to be smaller than the area for continuously loading wafers 600. When X is about half of Y, the size of area 610 as the first area is configured to be larger than area 620 as the second area. That is, the area for dispersedly loading wafers 600 is configured to be larger than the area for continuously loading wafers 600.

[0089] Here, the relationship between the size of region 610 and the number of wafers 600 to be loaded is determined experimentally, for example, so as to improve the uniformity of processing of each wafer 600. Table data indicating the optimal relationship between the size of region 610 and the number of wafers 600 is recorded in the storage device 121c described later. The setting of the size of region 610 is performed, for example, when the number of wafers 600 to be processed is determined. Specifically, the size of region 610 is set when the process recipe to be executed next is read from the storage device 121c (for example, in the step of process condition setting S501 described later). Regarding the relationship between the size of region 620 and the number of wafers 600, it may also be determined experimentally so as to improve the uniformity of processing of each wafer 600, and table data indicating the relationship between the size of region 620 and the number of wafers 600 may be recorded in the storage device 121c. Table data indicating the relationship between the number of wafers 600, the size of each region (region 610 and region 620), and the boat loading pattern is recorded in the storage device 121c and read from the storage device 121c in the process condition setting step S501.

[0090] FIG. 7 shows an example in which wafers 600 are dispersedly loaded in a boat 217 having a 100-wafer loading region, divided into three regions 611, 612, and 621 with different loading pitches (intervals between wafers 600). Region 611 corresponds to the first region, and region 621 corresponds to the second region. Region 612 may be set as a part of the first region or as another third region. Similar to the case of FIG. 6, monitor substrates 601 for monitoring the film thickness of the film formed on the substrate may be loaded at both upper and lower ends and the central portion of the boat 217. The processing region 641 in FIG. 7 corresponds to region 611 as the first region, region 621 as the second region, and region 612 as the third region.

[0091] In FIG. 7, in region 611, wafers 600 to be processed are loaded on both sides of monitor substrate 601 loaded in the central part of boat 217, sandwiching the monitor substrate 601, and dummy wafers 602 and wafers 600 are alternately loaded on the outside thereof. Further, in the regions outside region 611, there are regions 612 where two or more wafers 600 are continuously loaded and regions where one dummy wafer 602 is loaded and the regions are alternately arranged, region 621 where wafers 600 are continuously loaded without using dummy wafers 602 outside region 612, and further, in region 631 between region 621 and the location where monitor substrate 601 at the end of boat 217 is loaded, only dummy wafers 602 are loaded without loading wafers 600.

[0092] In this way, the loading density of wafers 600 in each region (region 611, region 612) to be dispersedly loaded is configured to gradually change. Here, an example of providing two regions to be dispersedly loaded is shown, but the present invention is not limited thereto, and three or more regions may be provided. By loading wafers 600 so that the loading density of wafers 600 in boat 217 gradually changes, the difference in the exposure amount of the processing gas to each wafer 600 can be reduced. That is, the processing uniformity for each wafer 600 can be improved. Note that the size of each region (region 611, region 612, region 631) is determined by the total number of wafers 600 loaded in boat 217.

[0093] Here, in region 611, an example of alternately arranging wafers 600 and dummy wafers 602 is shown, but the present invention is not limited thereto, and one wafer 600 and a plurality of dummy wafers 602 may be alternately arranged so that the density of wafers 600 in region 611 is smaller than the density of wafers 600 in other regions. Here, the plurality of dummy wafers 602 are continuously loaded between wafers 600. The number of dummy wafers 602 continuously loaded is set based on the number of wafers 600 loaded in boat 217. Note that the number of dummy wafers 602 continuously loaded between wafers 600 may be, for example, two or three. The interval between wafers 600 can be widened by the number of dummy wafers 602. In other words, the loading density of wafers 600 can be reduced.

[0094] In this way, by making the density of the wafers 600 on the central side of the boat 217 smaller than the density of the wafers 600 on the outer side of the boat 217, the exposure amount of the processing gas to the wafers 600 loaded on the central side of the boat 217 can be increased. Here, an example in which the dummy wafers 602 are loaded in the region 611 is shown, but it is not limited to this, and the dummy wafers 602 may not be loaded. By loading the dummy wafers 602, the gas exposure amount of the processing gas to each wafer can be made uniform. Near the slots where the dummy wafers 602 are not loaded, the gas consumed by the dummy wafers 602 is supplied to other wafers 600, so the gas exposure amount to the wafers 600 near the slots where the dummy wafers 602 are not loaded can be increased. When this increase in the exposure amount is large, by loading the dummy wafers 602, the exposure amount can be made uniform. Note that dummy wafers 602 having different surface areas may be loaded. By loading dummy wafers 602 having different surface areas, the gas exposure amount to the wafers 600 can be adjusted. Note that the positions where the dummy wafers 602 having different surface areas are loaded may be specified for specific slots, or may be selected according to the interval between the wafers 600.

[0095] The loading pitch of the wafers 600 is set according to the number X of the wafers 600. Table data showing the relationship between the number of the wafers 600 and the loading pitch (interval between the wafers 600) is recorded in the storage device 121c, and the loading pitch data corresponding to the number X of the wafers 600 is read from the table data of the storage device 121c and set.

[0096] As shown in FIG. 7, a pattern of loading the wafers 600 with different loading pitches is preferably used when the number X of the wafers 600 is, for example, half or less of the maximum loading number Y, preferably about a dozen. When the number of wafers 600 to be processed is small, by adopting such an arrangement pattern, the processing uniformity for each wafer 600 can be improved.

[0097] Here, the number of wafers 600 loaded into area 611 and the number of wafers 600 loaded into area 612 and area 621 are experimentally determined so as to improve the uniformity of processing among the wafers 600 in each area, and are recorded in the storage device 121c so as to be readable as correspondence table data.

[0098] As shown in FIG. 6 or FIG. 7, when the wafer 600 is loaded into the boat 217 and a film is formed on the wafer 600 in the procedure as described in the above “(2) Film formation step”, the distribution of the exposure amount of the source gas (and reaction gas) to the wafer 600 according to the loading position of the wafer 600 into the boat 217 is shown as 730 in FIG. 8(a).

[0099] In FIG. 8(a), the horizontal axis indicates the loading position of the wafer 200 (wafer 600 in FIGS. 6 and 7) into each slot of the boat 701 (corresponding to the boat 217 in FIGS. 1, 6, and 7) schematically shown in FIG. 8(b), and shows the wafer loading positions in ascending order from bottom to top. In the boat 701 of FIG. 8(b), the right side corresponds to the upper side of the boat 217 shown in FIG. 6 or FIG. 7, and the left side of the boat 701 in FIG. 8(b) corresponds to the lower side of the boat 217 shown in FIG. 6 or 7.

[0100] Also, in FIG. 8(a), the vertical axis represents the exposure amount of the processing gas for each wafer loaded in the boat 701. In other words, the vertical axis means the amount of gas contributing to the formation of the film on each wafer. The larger the value on the vertical axis, the larger the exposure amount of the processing gas to the wafer 600, and the smaller the value on the vertical axis, the smaller the exposure amount of the processing gas to the wafer 600. Also, a large gas exposure amount means a large film thickness formed on the wafer 600. A small gas exposure amount means a small film thickness formed on the wafer 600. Here, the gas exposure amount in FIG. 8(a) mainly means the exposure amount of the source gas as the processing gas, but it is presumed that the exposure amount of the reaction gas also shows a similar tendency. That is, due to the difference in the exposure amount of the processing gas, at least the film thickness among the film characteristics causes a problem that there is a difference for each wafer 600. Also, due to the difference between the exposure amount of the source gas and the exposure amount of the reaction gas, a problem may occur that the film composition differs for each wafer 600.

[0101] In the data 730 of FIG. 8(a), the gas exposure amount distribution for each wafer loaded in the boat 701 according to this embodiment is shown. The data 703 showing the gas exposure amount distribution according to this embodiment is formed by a region where the wafers are loaded every other one near the center and a region adjacent to the outside thereof, as shown in 731 of FIG. 8(b), corresponding to the loading of the wafers 200 into the boat 217 described in FIG. 6. Also, the supply of the source gas, the reaction gas, and the inert gas to the processing chamber 201 was performed using the nozzles 410, 336, 337 as shown in FIG. 3.

[0102] In the graph shown in FIG. 8(a), the data 710 is, as a first comparative example with respect to the data 730 of the gas exposure amount distribution according to this embodiment, as shown in the boat loading arrangement diagram 711 of the wafers in FIG. 8(b), and shows the distribution of the exposure amount of the processing gas to the wafers at each position when the wafers are loaded adjacent to each other in the region 714. In the boat loading arrangement diagram 711 of the wafers in FIG. 8(b), 713 indicates the position where the dummy wafer for film thickness monitoring is loaded.

[0103] As shown in the boat loading arrangement diagram 711 of the wafer in FIG. 8(b), when all the wafers 200 are continuously loaded only, as shown in the data 710 of FIG. 8(a), the difference in the exposure amount of the processing gas between the peripheral portions 7101 and 7102 with respect to the exposure amount of the processing gas in the vicinity of the central portion 7103 is large. That is, as shown in the data 710 of the comparative example, when all the wafers are loaded into the boat adjacent to each other, it can be seen that the distribution of the exposure amount of the processing gas according to the loaded position is large. Specifically, the exposure amount in the vicinity of the central portion decreases, and the exposure amounts of the peripheral portions 7101 and 7102 increase. This is considered to occur because there is no wafer 600 above the peripheral portion 7102, and thus the gas that should be consumed is supplied to the wafer in the peripheral portion 7102 in the vicinity of the peripheral portion 7102. The same applies to the peripheral portion 7101. On the other hand, in the vicinity of the central portion 7103, since the density of the wafers 600 is high, it is considered that the exposure amount of the gas supplied to each wafer 600 decreases because the gas consumed by each wafer 600 increases.

[0104] Also, the data 720 in FIG. 8(a) shows a second comparative example with respect to the data 730 of the gas exposure amount distribution according to this embodiment. In the second comparative example, as in the case of this embodiment described with reference to FIG. 6, as shown in the boat loading arrangement diagram (boat loading pattern) 731 of the wafer in FIG. 8(b), wafers are loaded every other one in the vicinity of the central portion of the boat 701, and the wafers are loaded adjacent to each other in the vicinity of the peripheral portion of the boat 701. However, in the second comparative example, instead of the nozzles 336 and 337 which are the gas supply pipes in this embodiment shown in FIG. 3, an inert gas (N2 gas) of the same type as the carrier gas is supplied using a gas supply pipe 3380 provided with a large number of gas supply holes 3381 at equal pitches from top to bottom as shown in FIG. 9. Note that the data of the boat loading pattern is recorded in the storage device 121c.

[0105] That is, in the second comparative example, it shows the distribution of the exposure amount of the processing gas with respect to the wafers at each position when film formation is performed while supplying the inert gas substantially evenly in the vertical direction using the gas supply pipe 3380 for supplying the inert gas in which a large number of gas supply holes 3381 are formed at equal pitches.

[0106] As shown in the data 720 of the second comparative example shown in FIG. 8(a), the distribution of the exposure amount of the processing gas is improved as compared with the data 710 of the first comparative example. That is, by loading as shown in the boat loading layout diagram 731, the distribution of the gas exposure amount for each wafer can be improved. Even in this boat loading layout diagram 731, there is still a difference in the exposure amount of the processing gas between both end portions 7201 and 7202 and the vicinity of the central portion.

[0107] On the other hand, in the data 730 of the gas exposure amount distribution according to the present embodiment shown in FIG. 8(a), the difference in the exposure amount of the processing gas between both end portions 7301 and 7302 and the vicinity of the central portion is further smaller than in the case of the data 720 of the second comparative example, and the distribution of the exposure amount of the processing gas among the wafers is improved.

[0108] In the present embodiment, as shown in FIG. 3, a nozzle 336 as a second nozzle and a nozzle 337 as a first nozzle are used as supply pipes for the inert gas. A gas supply hole 3361 as a second supply hole is provided on the lower side of the nozzle 336, and a gas supply hole 3371 as a first supply hole is provided on the upper side of the nozzle 337. The first supply hole 3371 is

[0109] By adopting such a configuration, the amount of inert gas supplied to the wafers 200 loaded in the vicinity of the central portion of the boat 217 with respect to the inert gas (carrier gas) component contained in the raw material gas or reaction gas supplied from the gas supply hole 4101 of the nozzle 410 is increased compared to the amount of inert gas supplied to the wafers 200 loaded in the upper and lower portions of the boat 217.

[0110] As a result, as shown in the data 710 of the first comparative example and the data 720 of the second comparative example in FIG. 8(a), the exposure amount of the processing gas to the wafers loaded in the upper and lower peripheral portions with respect to the central portion of the boat 217 is suppressed, and the distribution of the exposure amount of the processing gas among the wafers is improved.

[0111] Although not shown in the graph of FIG. 8, even when the wafers 200 are loaded such that the control density of the wafers 200 gradually increases from a portion near the center of the boat 217 toward the outside as described in FIG. 7, by supplying a source gas, a reaction gas, and an inert gas using the nozzles 410 and 336, 337 as shown in FIG. 3, a distribution of the exposure amount of the processing gas among the wafers similar to the data 730 of the gas exposure amount distribution in FIG. 8(a) is obtained, and the distribution of the exposure amount of the processing gas among the wafers is improved as compared with the first and second comparative examples.

[0112] As described above, according to the present disclosure, in the case of processing substrates in batches, it has become possible to improve the thickness uniformity among a plurality of substrates as compared with the conventional case. In addition, it has become possible to improve the controllability of the film thickness of the film formed on the substrate.

[0113] In the above-described embodiment, as the inert gas, in addition to N2 gas, noble gases such as Ar gas, He gas, Ne gas, and Xe gas may be used.

[0114] Further, in the above-described embodiment, the configuration in which the nozzle 410 is shared for the supply of the source gas and the supply of the reaction gas to the processing chamber 201 has been described, but the configuration may be such that the nozzle for supplying the source gas and the nozzle for supplying the reaction gas are separated.

[0115] Further, in the above-described embodiment, the configuration in which the inert gas is supplied from the nozzles 336 and 337 in FIG. 3 has been shown, but the configuration may be such that at least one of the source gas and the reaction gas can be supplied instead of the inert gas. By supplying at least one of the source gas and the reaction gas from the nozzles 336 and 337, it is possible to form a film with a larger film thickness on the wafers 600 loaded on at least one of the upper and lower sides of the boat.

[0116] In the above-described embodiment, an example in which either or both of the wafer 600 and the dummy wafer 602 are loaded into all the slots of the boat 217 has been mainly described, but the present invention is not limited to this. Depending on the configuration of the substrate processing apparatus, the process recipe (substrate processing conditions), etc., the film characteristics formed on the wafer 600 loaded in a specific slot of the boat 217 may be significantly worse than the film characteristics formed on the wafer 600 loaded in other slots. For example, the gas exposure amount shown in FIG. 8(a) may be different from that of other slots. In such a case, this specific slot may be set as a slot into which the wafer 600 is not loaded, and regardless of the number of wafers 600, the configuration may be such that the wafer 600 is not loaded into this specific slot. Here, the configuration of the substrate processing apparatus refers to the shape of the nozzle for supplying gas, the shape and position of the supply holes provided in the nozzle, the position of the exhaust pipe 241, etc. The process recipe refers to the characteristics of the gas to be supplied, the supply timing, the processing temperature, the pressure, the gas flow rate, etc. Further, it may be affected by the pattern formed on the surface of the wafer 600.

[0117] In the above-described embodiment, the silicon nitride film (SiN) has been described as an example of the film formed on the wafer 600, but the present invention is not limited to this. For example, it can also be applied to a process of forming a film containing at least one or more elements such as Si, Ge, Al, Ga, In, Ti, Zr, Hf, La, Ta, Mo, W, etc. Further, in the above-described embodiment, an example of forming a nitride film has been described, but the present invention is not limited to this. For example, it may be a film containing at least one or more of oxygen (O), carbon (C), and nitrogen (N), or it may be a single-element film not containing these elements.

[0118] In the above-described embodiment, an example of forming a silicon nitride film as an insulating film has been shown as one step in the manufacturing process of a semiconductor device. However, the present invention is not limited to semiconductor devices, and it can also be applied to a step of forming a film (substrate processing) as one step in the manufacturing process of various devices such as display devices, light-emitting devices, light-receiving devices, and solar cell devices.

[0119] The recipe (a program describing processing procedures, processing conditions, etc.) used for film formation processing and cleaning processing is preferably prepared individually according to the processing content (type of film to be formed or removed, composition ratio, film quality, film thickness, processing procedure, processing conditions, etc.), and stored in the storage device 121c via a telecommunication line or an external storage device 123. When starting the processing, it is preferable that the CPU 121a appropriately selects an appropriate recipe according to the processing content from among the plurality of recipes stored in the storage device 121c. As a result, it becomes possible to reproducibly form films of various film types, composition ratios, film qualities, and film thicknesses with a single substrate processing apparatus, and appropriate processing can be performed in each case. In addition, the burden on the operator (input burden such as processing procedures and processing conditions, etc.) can be reduced, and processing can be started quickly while avoiding operation errors.

[0120] The above-mentioned recipe is not limited to the case of newly creating it, and for example, it may be prepared by changing an existing recipe already installed in the substrate processing apparatus. When changing the recipe, the changed recipe may be installed in the substrate processing apparatus via a telecommunication line or a recording medium on which the recipe is recorded. Alternatively, the input / output device 122 provided in the existing substrate processing apparatus may be operated to directly change the existing recipe already installed in the substrate processing apparatus.

[0121] (4) Effects according to this embodiment According to the above-described embodiment, one or more of the following effects can be obtained.

[0122] (a) When using a batch processing apparatus having a substrate loading area with a maximum loading number of X sheets (X ≧ 3) to load and process a large surface area substrate of less than X sheets, by dispersedly loading the large surface area substrate across the substrate loading area, it becomes possible to flatten the density distribution of the large surface area substrate between the substrate loading areas. Thereby, it becomes possible to improve the film thickness uniformity between substrate surfaces.

[0123] (b) By increasing the number of divided substrate groups, that is, decreasing the number of substrates in each substrate group, within a range not exceeding the number of loadable slots, it becomes possible to improve the uniformity of film thickness among planes within each substrate group.

[0124] In the above-described embodiment, an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace has been described. The present disclosure is not limited to the above-described embodiment, and can also be suitably applied when forming a film using a substrate processing apparatus having a cold-wall type processing furnace. Also in these cases, the processing procedure and processing conditions can be, for example, the same as those in the above-described embodiment.

Explanation of Reference Numerals

[0125] 10 ··· Substrate processing apparatus 121 ··· Controller 200 ··· Wafer 201 ··· Processing chamber 202 ··· Processing furnace 203 ··· Reaction tube 207 ··· Heater 217 ··· Boat 241, 243 ··· Exhaust pipe 244 ··· Vacuum pump 315, 335, 510, 516 ··· Gas supply pipe 336, 337, 410 ··· Nozzle 3361, 3371, 411 ··· Gas supply hole 317, 333, 512 ··· MFC 318, 334, 514 ··· Valve.

Claims

1. A processing container capable of accommodating a substrate holder holding a substrate to be processed, a gas supply unit that supplies gas to the processing container, an exhaust unit that exhausts the atmosphere in the processing container, a transfer unit that transfers the substrate to be processed, a control unit having a first region for dispersedly loading on the central side of the substrate holder, and configured to control the transfer unit to dispersedly load the substrate to be processed from the central side of the first region when the number X of the substrates to be processed is smaller than the maximum loading number Y of the substrate holder, and having the control unit is configured to be able to control the transfer unit so that the density of the first region is smaller than the density of other regions substrate processing apparatus.

2. The control unit is configured to be able to set the size of the first region based on the X The substrate processing apparatus according to claim 1.

3. A processing container capable of accommodating a substrate holder holding a substrate to be processed, a gas supply unit that supplies gas to the processing container, an exhaust unit that exhausts the atmosphere in the processing container, a transfer unit that transfers the substrate to be processed, a control unit having a first region for dispersedly loading on the central side of the substrate holder, and configured to control the transfer unit to dispersedly load the substrate to be processed from the central side of the first region when the number X of the substrates to be processed is smaller than the maximum loading number Y of the substrate holder, and having the control unit is configured to be able to control the transfer unit to dispersedly load from the central side of the first region and change the loading density toward either or both of the upper end side and the lower end side of the first region substrate processing apparatus.

4. The control unit sets the interval between the substrates to be processed in the first region based on the X The substrate processing apparatus according to any one of claims 1 to 3.

5. A processing container capable of accommodating a substrate holder holding a substrate to be processed, a gas supply unit that supplies gas to the processing container, an exhaust unit that exhausts the atmosphere in the processing container, a transfer unit that transfers the substrate to be processed, a control unit having a first region for dispersedly loading on the central side of the substrate holder, and configured to control the transfer unit to dispersedly load the substrate to be processed from the central side of the first region when the number X of the substrates to be processed is smaller than the maximum loading number Y of the substrate holder, and having The upper end side and the lower end side of the substrate holder have a second region for continuously loading the substrate to be processed, and the control unit is configured to be able to control the transfer unit so as to continuously load the substrate to be processed into the second region. Substrate processing apparatus.

6. The control unit sets the ratio between the first region and the second region based on the relationship between X and Y. The substrate processing apparatus according to claim 5.

7. A first nozzle provided with a first supply hole for supplying gas to the upper end side of the substrate holder, and a second nozzle provided with a second supply hole for supplying gas to the lower end side of the substrate holder, and has The second region outside the first region is provided at a position close to either the first supply hole or the second supply hole. The substrate processing apparatus according to claim 5.

8. The gas supply unit is configured to be able to supply an inert gas from either or both of the first nozzle and the second nozzle. The substrate processing apparatus according to claim 7.

9. The gas supply unit is configured to be able to supply a processing gas from either or both of the first nozzle and the second nozzle. The substrate processing apparatus according to claim 7.

10. The processing gas is either or both of a raw material gas and a reaction gas. The substrate processing apparatus according to claim 9.

11. The substrate to be processed is a product substrate, and in the first region for dispersed loading, a dummy substrate is loaded between the product substrates. The substrate processing apparatus according to any one of claims 1 to 10.

12. The control unit sets the number of dummy substrates according to the number of product substrates loaded in the first region of the substrate holder. The substrate processing apparatus according to claim 11.

13. The control unit, in the first region, sets the number of consecutive loading of the dummy substrates into the first region according to the number of product substrates loaded in the substrate holder. The substrate processing apparatus according to claim 11 or 12.

14. The control unit is configured to be able to control the transfer unit so as to alternately load the product substrates and the dummy substrates in the first region. The substrate processing apparatus according to any one of claims 11 to 13.

15. The control unit sets slots in the substrate holder where the substrate to be processed is not loaded in advance, and is configured to be able to control the transfer unit so as not to load the substrate to be processed into the slots regardless of the number of the substrates to be processed. The substrate processing apparatus according to any one of claims 1 to 14.

16. When the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder having a first region for dispersedly loading at the center side, a substrate loading step of making the density of the first region smaller than the density of other regions and dispersedly loading the substrates to be processed from the center side of the first region, A step of transporting the substrate holder loaded with the substrates to be processed into a processing container, A step of supplying a processing gas into the processing container and performing processing, A substrate processing method having the above steps.

17. When the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder having a first region for dispersedly loading at the center side, a substrate loading procedure of making the density of the first region smaller than the density of other regions and dispersedly loading the substrates to be processed from the center side of the first region, A procedure of transporting the substrate holder loaded with the substrates to be processed into a processing container, A procedure of supplying a processing gas into the processing container and performing processing, A program for causing a computer to execute the above steps on a substrate processing apparatus.

18. When the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder having a first region for dispersedly loading at the center side and a second region for continuously loading at the upper end side and the lower end side, a substrate loading step of dispersedly loading the substrates to be processed from the center side of the first region and continuously loading the substrates onto the second region, A step of transporting the substrate holder loaded with the substrates to be processed into a processing container, A step of supplying a processing gas into the processing container and performing processing, A substrate processing method having the above steps.

19. When the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder having a first region for dispersedly loading at the center side, a substrate loading step of dispersedly loading the substrates to be processed from the center side of the first region and loading them so as to change the loading density toward either or both of the upper end side and the lower end side of the first region, A step of transporting the substrate holder loaded with the substrates to be processed into a processing container, A step of supplying a processing gas into the processing container and performing processing, A substrate processing method having the above steps.

20. For a substrate holder having a first region for dispersedly loading on the central side and a second region for continuously loading on the upper end side and the lower end side, when the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder, a substrate loading procedure for dispersedly loading the substrates to be processed from the central side of the first region and continuously loading the substrates on the second region, A procedure for transporting the substrate holder loaded with the substrates to be processed into a processing chamber, A procedure for supplying a processing gas into the processing chamber for processing, A program that causes a computer to execute the above in a substrate processing apparatus.

21. For a substrate holder having a first region for dispersedly loading on the central side, when the number X of substrates to be processed is smaller than the maximum loading number Y of the substrate holder, a substrate loading procedure for dispersedly loading the substrates to be processed from the central side of the first region and loading them so as to change the loading density toward either or both of the upper end side and the lower end side of the first region, A procedure for transporting the substrate holder loaded with the substrates to be processed into a processing chamber, A procedure for supplying a processing gas into the processing chamber for processing, A program that causes a computer to execute the above in a substrate processing apparatus.

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