Method for manufacturing a semiconductor structure and semiconductor growth apparatus

Abstract

The present application provides a method for manufacturing a semiconductor structure and a semiconductor growth apparatus, the semiconductor growth apparatus comprising: a reaction chamber; a growth main pipeline connected to the reaction chamber at one end; a discharge main pipeline; first to Mth mixing main pipelines (M is an integer of 1 or more); first to Nth reactant gas source groups (N is an integer of 2 or more); first to Nth switching valve groups (k is an integer of 1 or more and N or less) suitable for controlling the kth switching valve group to transport gas in the kth reactant gas source group to the jth mixing main pipeline (j is an integer of 1 or more and M or less); and first to Mth growth discharge switching valves (j is an integer of 1 or more and M or less) suitable for switching the jth growth discharge switching valve to transport gas in the jth mixing main pipeline to the growth main pipeline or the discharge main pipeline. Use of the semiconductor growth apparatus is advantageous in improving the steepness of the interface during the growth of a semiconductor structure.

Description

Technical Field

[0001] This application relates to the technical field of semiconductors, and specifically to a method for manufacturing a semiconductor structure and a semiconductor growth apparatus.

[0002] This application claims the priority of a Chinese patent application filed with the Chinese Patent Office on September 9, 2021, with an application number of 202111053526.2 and an invention title of "Method for Manufacturing a Semiconductor Structure and a Semiconductor Growth Apparatus", and all of its contents are incorporated herein by reference.

Background Art

[0003] Semiconductor lasers, photodetectors, high electron mobility transistors, etc. are important optoelectronic devices and have great potential in the industrial and military fields. Such devices mainly use metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) to fabricate their epitaxial structures, and then use a wafer process to fabricate the epitaxial wafers into qualified devices. The steepness of the epitaxial heterointerface is one of the important indicators characterizing the quality of the epitaxial growth process, and the steepness of the heterointerface also has a great impact on the performance of the device.

[0004] Compared with MBE, MOCVD has many advantages such as a large adjustable range of growth rate, excellent device stability, and easy maintenance. Therefore, commercial devices often use MOCVD to grow epitaxial structures. However, compared with MBE, the steepness of the heterointerface formed by MOCVD growth is poor and has an adverse effect on the device performance to a certain extent.

Summary of the Invention

Problems to be Solved by the Invention

[0005] Therefore, the technical problem to be solved by this application is to solve the problem in the prior art that the steepness of the growth interface is poor, and to provide a method for manufacturing a semiconductor structure and a semiconductor growth apparatus.

Means for Solving the Problem

[0006] This application relates to a reaction chamber, a growth main pipeline with one end connected to the reaction chamber, an exhaust main pipeline, a first mixing main pipeline to an Mth (M is an integer greater than or equal to 1) mixing main pipeline, a first reaction gas source group to an Nth (N is an integer greater than or equal to 2) reaction gas source group, and a kth (k is an integer greater than or equal to 1 and less than or equal to N) switching valve group for controlling the gas in the kth reaction gas source group to be transported to the jth (j is an integer greater than or equal to 1 and less than or equal to M) mixing main pipeline, a first switching valve group to an Nth switching valve group suitable for this purpose, and a jth growth exhaust switching valve for switching the gas in the jth mixing main pipeline to be transported to the growth main pipeline or the exhaust main pipeline, a first growth exhaust switching valve to an Mth growth exhaust switching valve suitable for this purpose, and provides a semiconductor growth apparatus comprising the same.

[0007] Optionally, M is equal to 1, and the kth switching valve group is suitable for switching the gas in the kth reaction gas source group to be transported to the first mixing main pipeline or the exhaust main pipeline.

[0008] Optionally, it further comprises a first mixing branch pipeline group to an Nth mixing branch pipeline group all connected to the first mixing main pipeline, a first gas source connection pipeline group to an Nth gas source connection pipeline group where the kth gas source connection pipeline group is connected to the kth reaction gas source group, and a first exhaust branch pipeline group to an Nth exhaust branch pipeline group, and the kth switching valve group is suitable for switching the gas in the kth gas source connection pipeline group to be transported to the kth mixing branch pipeline group or the kth exhaust branch pipeline group.

[0009] Optionally, the kth mixing branch pipeline group comprises a first kth sub-mixing branch pipeline to a Q k th kth sub-mixing branch pipeline, the kth exhaust branch pipeline group comprises a first kth sub-exhaust branch pipeline to a Q k th kth sub-exhaust branch pipeline, and the kth gas source connection pipeline group comprises a first kth sub-gas source connection pipeline to a Q kEquipped with the k-th sub-gas source connection pipe of the n-th, the k-th switching valve group includes the first k-th sub-switching valve to Q k Equipped with the second k-th sub-switching valve of the n-th, q k (q k is an integer greater than or equal to 1 and Q k The following integer) the second k-th sub-switching valve of the n-th is q k The gas in the k-th sub-gas source connection pipe of the n-th is q k The second k-th sub-mixing branch pipe of the n-th or q k The following integer) the second k-th sub-discharge branch pipe of the n-th is suitable for switching to transport to.

[0010] Optionally, M is an integer greater than or equal to 2 and less than or equal to N, and the k-th switching valve group is suitable for switching to transport the gas in the k-th reaction gas source group to the j-th mixing main pipeline or the discharge main pipeline.

[0011] Optionally, further equipped with the first mixing branch pipe group to the N-th mixing branch pipe group, the k-th mixing branch pipe group includes Q k *M pieces of the k-th sub-mixing branch pipes, M*(q k -1)+1-th (q k is an integer greater than or equal to 1 and Q k The following integer) the k-th sub-mixing branch pipe from the (M*(q k -1)+1)-th to the M*q-th of the k-th sub-mixing branch pipes are respectively connected corresponding to the first mixing main pipeline to the M-th mixing main pipeline, the k-th discharge branch pipe group includes the first k-th sub-discharge branch pipe to Q k Equipped with the second k-th sub-discharge branch pipe of the n-th, the k-th switching valve group includes the first k-th sub-switching valve to Q k Equipped with the second k-th sub-switching valve of the n-th, q k The second k-th sub-switching valve of the n-th is q k The gas in the k-th sub-reaction gas source of the n-th is transferred to any one of the k-th sub-mixing branch pipes from the M*(q k -1)+1)-th to the M*q-th of the k-th sub-mixing branch pipes or q k The following integer) the second k-th sub-discharge branch pipe of the n-th is suitable for switching to transport to. k The second k-th sub-discharge branch pipe of the n-th is suitable for switching to transport to.

[0012] Optionally, in the first gas source connection pipe group to the Nth gas source connection pipe group, the kth gas source connection pipe group includes the first kth sub-gas source connection pipe to the Q k th kth sub-gas source connection pipe, and q k th kth sub-gas source connection pipe is q k th connected to the kth sub-reaction gas source, and q k th kth sub-switching valve is such that q k the gas in the th kth sub-gas source connection pipe is transported to the M*(q k -1)+1th kth sub-mixing branch pipe to the M*q k th any one of the kth sub-mixing branch pipes or q k th kth sub-discharge branch pipe, and is suitable for switching for transportation.

[0013] Optionally, the semiconductor growth apparatus further includes a first growth connection pipe to an Mth growth connection pipe, all of which are connected to the growth main pipeline, and a first discharge connection pipe to an Mth discharge connection pipe, all of which are connected to the discharge main pipeline. The jth growth-discharge switching valve is suitable for switching the gas in the jth mixing main pipeline to be transported to the jth growth connection pipe or the jth discharge connection pipe.

[0014] Optionally, the semiconductor growth apparatus includes a metalorganic chemical vapor deposition apparatus.

[0015] In this application, for the k1-th (where k1 is an integer from 1 to N) switching valve group, the step of controlling the gas in the k1-th reaction gas source group to be transported to the j1-th main mixing pipeline so that the j1-th main mixing pipeline has the k1-th reaction mixed gas; the step of switching the j1-th growth discharge switching valve to transport the k1-th reaction mixed gas in the j1-th main mixing pipeline to the growth main pipeline; after the j1-th growth discharge switching valve is switched to transport the k1-th reaction mixed gas in the j1-th main mixing pipeline to the growth main pipeline, all of the first to M-th growth discharge switching valves are switched to communicate with the discharge main pipeline so as to perform a growth interruption process in the reaction chamber; for the k2-th (where k2 is an integer from 1 to N and k2 is not equal to k1) switching valve group, the step of controlling the gas in the k2-th reaction gas source group to be transported to the j2-th (where j2 is equal to or not equal to j1) main mixing pipeline so that the j2-th main mixing pipeline has the k2-th reaction mixed gas; after performing the growth interruption process, the step of switching the j2-th growth discharge switching valve to transport the k2-th reaction mixed gas in the j2-th main mixing pipeline to the growth main pipeline. Further provided is a method for manufacturing a semiconductor structure using the semiconductor growth apparatus of this application.

[0016] Optionally, when M equals 1, the step of controlling the k1 switching valve group to transport the gas in the k1 reaction gas source group to the j1 mixed main pipeline includes controlling the k1 switching valve group to transport the gas in the k1 reaction gas source group to the first mixed main pipeline. The step of switching the j1 growth discharge switching valve to transport the k1 reaction mixed gas in the j1 mixed main pipeline to the growth main pipeline includes switching the first growth discharge switching valve to transport the k1 reaction mixed gas in the first mixed main pipeline to the growth main pipeline. During or after the growth interruption process, the k2 switching valve group controls the gas in the k2 reaction gas source group to be transported to the j2 mixed main pipeline. The step of controlling the k2 switching valve group to transport the gas in the k2 reaction gas source group to the j2 mixed main pipeline includes controlling the k2 switching valve group to transport the gas in the k2 reaction gas source group to the first mixed main pipeline. The step of switching the j2 growth discharge switching valve to transport the k2 reaction mixed gas in the j2 mixed main pipeline to the growth main pipeline includes switching the first growth discharge switching valve to transport the k2 reaction mixed gas in the first mixed main pipeline to the growth main pipeline.

[0017] Optionally, M is 2 or more, and M equals N, j2 is not equal to j1, k1 equals j1, and k2 equals j2.

[0018] Optionally, before or after controlling the k1 switching valve group to transport the gas in the k1 reaction gas source group to the j1 mixed main pipeline, where M is 2 or more and M is smaller than N, the k3 switching valve group controls the gas in the k3 reaction gas source group to be transported to the j3 mixed main pipeline such that the j3 mixed main pipeline has the k3 reaction mixed gas (where j3 is equal to j1), and the j3 growth discharge switching valve switches to transport the k3 reaction mixed gas in the j3 mixed main pipeline to the growth main pipeline; or before or after controlling the k2 switching valve group to transport the gas in the k2 reaction gas source group to the j2 mixed main pipeline, the k3 switching valve group controls the gas in the k3 reaction gas source group to be transported to the j3 mixed main pipeline such that the j3 mixed main pipeline has the k3 reaction mixed gas (where j3 is equal to j2), and the j3 growth discharge switching valve switches to transport the k3 reaction mixed gas in the j3 mixed main pipeline to the growth main pipeline, further including that k3 is an integer from 1 to N, k3 is not equal to k1, and k3 is not equal to k2.

[0019] Optionally, the duration of the growth interruption process is 1 s to 10 s.

[0020] The present application has the following beneficial effects. In the method for manufacturing a semiconductor structure according to the technical solution of the present application, the k1th reaction mixed gas introduced into the reaction chamber is reacted to form the k1th semiconductor film, and the k2th reaction mixed gas introduced into the reaction chamber is reacted to form the k2th semiconductor film. Between the step of forming the k1th semiconductor film and the step of forming the k2th semiconductor film, it contributes to eliminating the retention of the source material remaining after the reaction of the k1th reaction mixed gas on the surface of the k1th semiconductor film, and performs an interruption process that is advantageous for the k2th reaction mixed gas to establish a stable concentration gradient in the reaction chamber. Also, the interruption process is to ensure that the k1th reaction mixed gas is sufficiently mixed in the j1th mixed main pipeline before entering the reaction chamber, so that the times for the gases in different k1th sub-reaction gas sources in the k1th reaction gas source group to enter the reaction chamber are exactly the same. As described above, the steepness of the interface between the k1th semiconductor film and the k2th semiconductor film is improved.

[0021] To more clearly explain the specific embodiments of the present application or the technical solutions of the prior art, the drawings used in the following description of the specific embodiments or the prior art will be briefly described. Obviously, the drawings described below are some embodiments of the present application, and those skilled in the art can also obtain other drawings based on these drawings without creative efforts.

Brief Description of the Drawings

[0022]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Embodiments for Carrying Out the Invention

[0023] There are many reasons for the poor abruptness of the heterointerface in MOCVD growth, including component interdiffusion due to high growth temperature, residence at the boundary layer of residual materials, variation in the time passing through the source material, variation in the decomposition temperature of the source material, and many other reasons. Taking the growth of an InGaAs / AlGaAs superlattice as an example, for InGaAs, TMGa_1 (TMGa source in the first line) and TMIN (trimethylindium) are used as group III sources, for AlGaAs, TMAl (trimethylaluminum) and TMGa_2 (TMGa source in the second line) are used as group III sources, both use AsH3 as the group V source, and the flow rate of AsH3 does not change during the growth process. FIG. 1 shows the on / off situation of the source materials during the growth process of the InGaAs / AlGaAs superlattice. Throughout the growth process, AsH3 is always introduced and the flow rate does not change. When growing InGaAs, TMIN and TMGa_1 are turned on, and TMAl and TMGa_2 are turned off. When growing AlGaAs, TMAl and TMGa_2 are turned on, and TMIN and TMGa_1 are turned off.

[0024] In the actual growth process, when switching from InGaAs to AlGaAs or from AlGaAs to InGaAs4 during growth, there are several interference factors, which result in the InGaAs / AlGaAs heterointerface not being abrupt. One important factor is the asynchrony of the on / off of the group III sources. Ideally, the on / off of the group III sources is synchronous, that is, at the moment of switching the growth material from InGaAs to AlGaAs, the turn-off of TMIN and TMGa_1 and the turn-on of TMAl and TMGa_2 occur simultaneously. In reality, there is a certain difference in the opening and closing times of the run / vent valves that control the on / off of the four source materials, that is, there is a certain difference in the opening and closing times of the four valves, and the gas components in the run pipeline at the moment of switching become unstable. Also, the positions of the four run / vent valves in the gas pipeline are not the same. Therefore, there is a certain difference in the distance from the reaction chamber. As shown in Figure 2, the run / vent valves of TMIN, TMGa_1, TMGa_2, and TMAl have decreasing distances from the reaction chamber in this order. When turning off the sources TMIN and TMGa_1 and turning on TMAl and TMGa_2, the source materials of TMAl and TMGa_2 immediately enter the run pipeline. At this time, since the source materials of TMIN and TMGa_1 still remain in the run pipeline, the gas entering the reaction chamber contains four types of source materials and the components are unstable. Therefore, the heterointerface grown at the moment of switching is not steep. Figure 3 is a schematic diagram of the gas pipeline at the moment of switching from AlGaAs to InGaAs during growth. The time when the on / off of the group III sources is not synchronous is usually 0.1 ms to 100 ms.

[0025] Another important factor is the residence effect of the source materials on the growth surface. The source materials in the gas flow of the reaction chamber diffuse to the growth surface using the concentration gradient, but a certain amount of time is required to establish a stable concentration gradient.

[0026] In order to improve the steepness of the heterointerface, as a result of intensive research by the applicant, a method for improving the steepness of the heterointerface has been invented. The method can effectively suppress a plurality of factors that reduce the steepness of the interface, such as the variation in the time for the source materials to pass through and the residence of the residual source materials on the sample surface, and can improve the steepness of the heterointerface.

[0027] One embodiment of the present application provides a semiconductor growth apparatus that effectively eliminates the asynchrony of the on / off switching of the gas source by combining with the growth interruption time, thereby improving the steepness of the heterointerface.

[0028] Hereinafter, with reference to the drawings, the technical solutions of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of them. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor shall fall within the scope of the patent of the present application.

[0029] In the description of the present application, the orientation or positional relationship indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the illustrated orientation or positional relationship. It is only used to facilitate the description of the present application and simplify the description, and does not indicate or imply that the device or component must have a specific orientation or be configured and operated in a specific orientation. Therefore, it should not be understood as limiting the present application. Also, the terms "first", "second", "third" are only used for the purpose of description and should not be understood as indicating or suggesting relative importance.

[0030] In addition, the technical features according to various embodiments of the present application described below can be combined with each other as long as they do not conflict.

[0031] Example 1 One embodiment of the present application provides a semiconductor growth apparatus, which includes: a reaction chamber 100, a growth main pipeline 110 with one end connected to the reaction chamber 100, an exhaust main pipeline 120, a first mixing main pipeline to an Mth (M is an integer greater than or equal to 1) mixing main pipeline, a first reaction gas source group to an Nth (N is an integer greater than or equal to 2) reaction gas source group, The first switching valve group to the Nth switching valve group, which are suitable for controlling the kth (where k is an integer from 1 to N) switching valve group to transport the gas in the kth reaction gas source group to the jth (where j is an integer from 1 to M) mixing main pipeline, The first growth exhaust switching valve to the Mth growth exhaust switching valve, which are suitable for the jth growth exhaust switching valve to switch to transport the gas in the jth mixing main pipeline to the growth main pipeline or the exhaust main pipeline, are provided.

[0032] The kth reaction gas source group includes a plurality of kth sub-reaction gas sources. Specifically, the kth reaction gas source group includes Q k (Q k is an integer of 2 or more) kth sub-reaction gas sources. The Q k kth sub-reaction gas sources are respectively the first kth sub-reaction gas source to the Q k th kth sub-reaction gas source. The gases in the Q k kth sub-reaction gas sources are different.

[0033] Referring to FIG. 4, N is equal to 2, and the first reaction gas source group to the Nth reaction gas source group are respectively the first reaction gas source group 140 and the second reaction gas source group 150. The first reaction gas source group 140 includes two first sub-reaction gas sources 141, Q1 is equal to 2, and the two first sub-reaction gas sources are respectively the first first sub-reaction gas source and the second first sub-reaction gas source. The second reaction gas source group 150 includes two second sub-reaction gas sources 151, Q2 is equal to 2, and the two second sub-reaction gas sources are respectively the first second sub-reaction gas source and the second second sub-reaction gas source.

[0034] In one specific embodiment, the k-th reaction gas source group has two k-th sub-reaction gas sources. The first reaction gas source group 140 includes two first sub-reaction gas sources, and the gases in the two first sub-reaction gas sources are different. For example, one of the two first sub-reaction gas sources is a first sub-Ga gas source, and the other is a first indium gas source. The second reaction gas source group 150 includes two second sub-reaction gas sources, and the gases in the two second sub-reaction gas sources are different. For example, one of the two second sub-reaction gas sources is a second sub-Ga gas source, and the other is a second sub-Al gas source.

[0035] It should be noted that the number of the k-th sub-reaction gas sources in the k-th reaction gas source group may be two or more. The number of the k1-th (where k1 is an integer from 1 to N) sub-reaction gas sources is equal to or not equal to the number of the k2-th (where k2 is an integer from 1 to N) sub-reaction gas sources, and k2 is not equal to k1.

[0036] In the first switching valve group to the N-th switching valve group, the k-th switching valve group includes Q k individual k-th sub-switching valves. The Q k individual k-th sub-switching valves are respectively the first k-th sub-switching valve to the Q k -th k-th sub-switching valve. The number of the k-th sub-switching valves in the k-th switching valve group is equal to the number of the k-th sub-reaction gas sources in the k-th reaction gas source group, and one k-th sub-switching valve corresponds to one k-th sub-reaction gas source.

[0037] Referring to FIG. 4, when N is equal to 2, the apparatus includes a first switching valve group 160 and a second switching valve group 170. The first switching valve group 160 includes two first sub-switching valves 161, and the two first sub-switching valves are respectively the first first sub-switching valve and the second first sub-switching valve. The second switching valve group 170 includes two second sub-switching valves 171, and the two second sub-switching valves are respectively the first second sub-switching valve and the second second sub-switching valve.

[0038] Referring to FIG. 4, when M is equal to 1, the mixing main pipeline includes only the first mixing main pipeline 131.

[0039] The first mixed main pipeline 131 can select and pass the gas in the k-th reaction gas source group through the k-th switching valve group. When selecting the gas in the k1-th (k1 is an integer from 1 to N) reaction gas source group as the gas to pass through the first mixed main pipeline, the gas in the k2-th (k2 is an integer from 1 to N and k2 is not equal to k1) reaction gas source group is not passed through the first mixed main pipeline. When N is equal to 2 and the gas in the first reaction gas source group 140 is passed through the first mixed main pipeline 131, the gas in the second reaction gas source group 150 is not passed through the first mixed main pipeline 131. When the gas in the second reaction gas source group 150 is passed through the first mixed main pipeline 131, the gas in the first reaction gas source group 140 is not passed through the first mixed main pipeline 131.

[0040] Referring to FIG. 4, the k-th switching valve group is suitable for switching to transport the gas in the k-th reaction gas source group to the first mixed main pipeline 131 or the discharge main pipeline 120. The first switching valve group 160 is suitable for switching to transport the gas in the first reaction gas source group 140 to the first mixed main pipeline 131 or the discharge main pipeline 120. The second switching valve group 170 is suitable for switching to transport the gas in the second reaction gas source group 150 to the first mixed main pipeline 131 or the discharge main pipeline 120.

[0041] The semiconductor growth apparatus further includes a first mixed branch pipe group to an N-th mixed branch pipe group all connected to the first mixed main pipeline 131. The k-th mixed branch pipe group includes a plurality of k-th sub-mixed branch pipes. Specifically, the k-th mixed branch pipe group includes Q k k-th sub-mixed branch pipes, and the Q k k-th sub-mixed branch pipes are respectively the first k-th sub-mixed branch pipe to the Q k -th k-th sub-mixed branch pipe. The semiconductor growth apparatus further includes a first discharge branch pipe group to an N-th discharge branch pipe group. The k-th discharge branch pipe group includes Q kcomprises k sub-discharge branch pipes, and the k-th sub-discharge branch pipe is connected to the discharge main pipeline 120, Q k The k sub-discharge branch pipes are respectively the first k-th sub-discharge branch pipe to Q k th k-th sub-discharge branch pipe, and the k-th switching valve group is suitable for switching the gas in the k-th gas source connection pipe group to the k-th mixing branch pipe group or the k-th discharge branch pipe group, q k th (q k is an integer greater than or equal to 1 and less than or equal to Qk) of the k-th sub-switching valve, q k the gas in the q-th k-th sub-reaction gas source to q k th k-th sub-mixing branch pipe or q k th k-th sub-discharge branch pipe for transportation.

[0042] The semiconductor growth apparatus further comprises a first gas source connection pipe group to an N-th gas source connection pipe group in which the k-th gas source connection pipe group is connected to the k-th reaction gas source group. Specifically, the k-th gas source connection pipe group comprises Q k k sub-gas source connection pipes, and Q k The k sub-gas source connection pipes are respectively the first k-th sub-gas source connection pipe to Q k th k-th sub-gas source connection pipe, and Q k th k-th sub-switching valve, q k the gas in the q-th k-th sub-gas source connection pipe to q k th k-th sub-mixing branch pipe or q k th k-th sub-discharge branch pipe for transportation.

[0043] Referring to FIG. 4, the semiconductor growth apparatus includes a first mixed branch pipe group and a second mixed branch pipe group. The first mixed branch pipe group includes two first sub-mixed branch pipes 181, and the second mixed branch pipe group includes two second sub-mixed branch pipes 182. All of the first sub-mixed branch pipes 181 and the second sub-mixed branch pipes 182 are connected to the first mixed main pipeline 131. The semiconductor growth apparatus further includes a first discharge branch pipe group and a second discharge branch pipe group. The first discharge branch pipe group includes two first sub-discharge branch pipes 191, and the second discharge branch pipe group includes two second sub-discharge branch pipes 192. All of the first sub-discharge branch pipes 191 and the second sub-discharge branch pipes 192 are connected to the discharge main pipeline 120. The first sub-switching valve 161 is suitable for switching the gas in the first sub-reaction gas source 141 to be transported to the first sub-mixed branch pipe 181 or the first sub-discharge branch pipe 191. The second sub-switching valve 171 is suitable for switching the gas in the second sub-reaction gas source 151 to be transported to the second sub-mixed branch pipe 182 or the second sub-discharge branch pipe 192. Specifically, one first sub-switching valve 161 is suitable for switching the gas in one first sub-reaction gas source 141 to be transported to one first sub-mixed branch pipe 181 or one first sub-discharge branch pipe 191, and the second sub-switching valve 171 is suitable for switching the gas in the second sub-reaction gas source 151 to be transported to the second sub-mixed branch pipe 182 or the second sub-discharge branch pipe 192.

[0044] The semiconductor growth apparatus further includes a first growth connection pipe to an Mth growth connection pipe, all of which are connected to the growth main pipeline 110, and a first discharge connection pipe to an Mth discharge connection pipe, all of which are connected to the discharge main pipeline 120. The jth growth and discharge switching valve is suitable for switching the gas in the jth mixed main pipeline to be transported to the jth growth connection pipe or the jth discharge connection pipe.

[0045] Referring to FIG. 4, when M is equal to 1, in such a case, the semiconductor growth apparatus includes a first growth discharge switching valve 301, and the semiconductor growth apparatus further includes a first growth connection pipe 201 and a first discharge connection pipe 202. The first growth discharge switching valve 301 is suitable for switching to transport the gas in the first mixed main pipeline 131 to the first growth connection pipe 201 or the first discharge connection pipe 202.

[0046] Note that the gas in the first mixed main pipeline 131 is transported in the direction from the k-th sub-mixed branch pipe to the first growth discharge switching valve.

[0047] The semiconductor growth apparatus has a k-th growth branch pipe group including Q k individual k-th sub-growth branch pipes (not shown), a first growth branch pipe group to an N-th growth branch pipe group connected to the growth main pipeline 110, a k-th additional discharge branch pipe group including Q k individual k-th sub-additional discharge branch pipes, a first additional discharge branch pipe group to an N-th additional discharge branch pipe group, and a k-th additional switching valve group including Q k individual k-th sub-additional switching valves, a first additional switching valve group to an N-th additional switching valve group. The q k th k-th sub-switching valve is suitable for switching to transport the gas in the q k th k-th sub-reaction gas source to the q k th k-th sub-mixed branch pipe or the q k th k-th sub-additional discharge branch pipe 2. The q k th k-th sub-additional discharge branch pipe transports the gas to the q k th k-th sub-additional switching valve and then to the q k th k-th sub-discharge branch pipe or the q k th k-th sub-growth branch pipe.

[0048] The growth main pipeline 110 has a first end and a second end that face each other in the extending direction of the growth main pipeline 110. The first end is connected to the reaction chamber 100, and the second end is sealed. When there are a first growth branch pipe group to an Nth growth branch pipe group, the connection locations between the first growth branch pipe group to the Nth growth branch pipe group and the growth main pipeline 110 are all located between the first end and the second end.

[0049] The semiconductor growth apparatus includes a metalorganic chemical vapor deposition apparatus.

[0050] Example 2 Compared with the above example, in this example, M is 2 or more and M is less than or equal to N. The difference lies in that the kth switching valve group is suitable for switching the gas in the kth reaction gas source group to be transported to the jth mixed main pipeline or the discharge main pipeline.

[0051] The kth reaction gas source group includes a plurality of kth sub-reaction gas sources. Specifically, the kth reaction gas source group includes Q k (Q k is an integer of 2 or more) kth sub-reaction gas sources. The Q k kth sub-reaction gas sources are respectively the first kth sub-reaction gas source to the Q k th kth sub-reaction gas source. The gas in the Q k kth sub-reaction gas sources is different. The gas in the plurality of kth sub-reaction gas sources is different.

[0052] The kth switching valve group includes a plurality of kth sub-switching valves. Specifically, the kth switching valve group includes Q k kth sub-switching valves. The Q k kth sub-switching valves are respectively the first kth sub-switching valve to the Q k th kth sub-switching valve. The number of kth sub-switching valves in the kth switching valve group is equal to the number of kth sub-reaction gas sources in the kth reaction gas source group, and one kth sub-switching valve corresponds to one kth sub-reaction gas source.

[0053] In this embodiment, the semiconductor growth apparatus further includes a first mixed branch pipe group to an Nth mixed branch pipe group. The kth mixed branch pipe group includes a plurality of kth sub-mixed branch pipes, and any jth mixed main pipeline in the first mixed main pipeline to the Mth mixed main pipeline is connected to a part of the plurality of kth sub-mixed branch pipes. Specifically, the kth mixed branch pipe group includes Q k * M kth sub-mixed branch pipes, and the jth mixed main pipeline includes Q k connected to the kth sub-mixed branch pipes, and the kth discharge branch pipe group includes Q k kth sub-discharge branch pipes. The (M * (q k - 1) + 1)th (where q k is an integer greater than or equal to 1 and less than or equal to Q k ) kth sub-mixed branch pipes to the M * q k th kth sub-mixed branch pipes are respectively connected corresponding to the first mixed main pipeline to the Mth mixed main pipeline. Any two of the (M * (q k - 1) + 1)th to the M * q k th kth sub-mixed branch pipes are connected to different mixed main pipelines. The kth discharge branch pipe group includes the first kth sub-discharge branch pipe to the Q k th kth sub-discharge branch pipe, and the kth switching valve group includes the first kth sub-switching valve to the Q k th kth sub-switching valve. The q k th kth sub-switching valve is suitable for switching the gas in the q k th kth sub-reaction gas source to any one of the (M * (q k - 1) + 1)th to the M * q k th kth sub-mixed branch pipes or the q k th kth sub-discharge branch pipe for transportation.

[0054] The (M * (q k - 1) + 1)th to the M * q kThe fact that the k-th sub-mixing branch pipes of the n-th are respectively connected corresponding to the first mixing main pipeline to the M-th mixing main pipeline means that the (M*(q k -1)+1)-th k-th sub-mixing branch pipe is connected to the first mixing main pipeline, the (M*(q k -1)+2)-th k-th sub-mixing branch pipe is connected to the second mixing main pipeline, and the M*q k -th k-th sub-mixing branch pipe is connected to the M-th mixing main pipeline, and so on.

[0055] The semiconductor growth apparatus further includes a first gas source connection pipe group to an N-th gas source connection pipe group. The k-th gas source connection pipe group includes Q k pieces of k-th sub-gas source connection pipes. The Q k pieces of k-th sub-gas source connection pipes are respectively the first k-th sub-gas source connection pipe to the Q k -th k-th sub-gas source connection pipe. The q k -th k-th sub-gas source connection pipe is connected to the q k -th k-th sub-reaction gas source. The q k -th k-th sub-switching valve is suitable for switching the gas in the q k -th k-th sub-gas source connection pipe to be transported to any one of the (M*(q k -1)+1)-th k-th sub-mixing branch pipe to the M*q k -th k-th sub-mixing branch pipe or the q k -th k-th sub-discharge branch pipe.

[0056] Referring to FIG. 5, M is 2 or more and M is equal to N. The semiconductor growth apparatus includes a reaction chamber 100, a growth main pipeline 110, an exhaust main pipeline 120, a first reaction gas source group 140 and a second reaction gas source group 150. The first reaction gas source group 140 includes two first sub-reaction gas sources 141, Q1 is equal to 2, the two first sub-reaction gas sources are the first first sub-reaction gas source and the second first sub-reaction gas source respectively, the second reaction gas source group 150 includes two second sub-reaction gas sources 151, Q2 is equal to 2, and the two second sub-reaction gas sources are the first second sub-reaction gas source and the second second sub-reaction gas source respectively. The first reaction gas source group 140 and the second reaction gas source group 150, a first switching valve group 160 and a second switching valve group 170. The first switching valve group 160 includes two first sub-switching valves 161, the two first sub-switching valves are the first first sub-switching valve and the second first sub-switching valve respectively, the second switching valve group 170 includes two second sub-switching valves 171, and the two second sub-switching valves are the first second sub-switching valve and the second second sub-switching valve respectively. The first switching valve group 160 and the second switching valve group 170, a first mixing branch pipe group and a second mixing branch pipe group. The first mixing branch pipe group includes four first sub-mixing branch pipes 281, the four first sub-mixing branch pipes are the first first sub-mixing branch pipe, the second first sub-mixing branch pipe, the third first sub-mixing branch pipe, and the fourth first sub-mixing branch pipe respectively. The first first sub-mixing branch pipe and the second first sub-mixing branch pipe are respectively connected corresponding to the first mixing main pipeline to the second mixing main pipeline. The third first sub-mixing branch pipe and the fourth first sub-mixing branch pipe are respectively connected corresponding to the first mixing main pipeline to the second mixing main pipeline. The second mixing branch pipe group includes four second sub-mixing branch pipes 282, the four second sub-mixing branch pipes are the first second sub-mixing branch pipe, the second second sub-mixing branch pipe, the third second sub-mixing branch pipe, and the fourth second sub-mixing branch pipe respectively. The first second sub-mixing branch pipe and the second second sub-mixing branch pipe are respectively connected corresponding to the first mixing main pipeline and the second mixing main pipeline.The third second sub-mixing branch pipe and the fourth second sub-mixing branch pipe are respectively the first mixing branch pipe group and the second mixing branch pipe group connected corresponding to the first mixing main pipeline and the second mixing main pipeline, and the first discharge branch pipe group and the second discharge branch pipe group. The first discharge branch pipe group includes two first sub-discharge branch pipes 191. The two first sub-discharge branch pipes are respectively the first first sub-discharge branch pipe and the second first sub-discharge branch pipe. The second discharge branch pipe group includes two second sub-discharge branch pipes 192. The two second sub-discharge branch pipes are respectively the first second sub-discharge branch pipe and the second second sub-discharge branch pipe. The first sub-discharge branch pipe 191 and the second sub-discharge branch pipe 192 all include the first discharge branch pipe group and the second discharge branch pipe group connected to the discharge main pipeline 120. The first first sub-switching valve is suitable for switching the gas in the first first sub-reaction gas source to be transported to the first first sub-mixing branch pipe, the second first sub-mixing branch pipe or the first first sub-discharge branch pipe. The second first sub-switching valve is suitable for switching the gas in the second first sub-reaction gas source to be transported to the third first sub-mixing branch pipe, the fourth first sub-mixing branch pipe or the second first sub-discharge branch pipe. The first second sub-switching valve is suitable for switching the gas in the first second sub-reaction gas source to be transported to the first second sub-mixing branch pipe, the second second sub-mixing branch pipe or the first second sub-discharge branch pipe. The second second sub-switching valve is suitable for switching the gas in the second second sub-reaction gas source to be transported to the third second sub-mixing branch pipe, the fourth second sub-mixing branch pipe or the second second sub-discharge branch pipe.

[0057] Referring to FIG. 5, the semiconductor growth apparatus further includes a first gas source connection pipe group to a second gas source connection pipe group. The first gas source connection pipe group includes two first sub-gas source connection pipes, which are respectively the first first sub-gas source connection pipe and the second first sub-gas source connection pipe. The first first sub-gas source connection pipe is connected to the first first sub-reaction gas source, and the second first sub-gas source connection pipe is connected to the second first sub-reaction gas source. The second gas source connection pipe group includes two second sub-gas source connection pipes, which are respectively the first second sub-gas source connection pipe and the second second sub-gas source connection pipe. The first second sub-gas source connection pipe is connected to the first second sub-reaction gas source, and the second second sub-gas source connection pipe is connected to the second second sub-reaction gas source. The first first sub-switching valve is suitable for switching the gas in the first first sub-gas source connection pipe to be transported to the first first sub-mixing branch pipe, the second first sub-mixing branch pipe or the first first sub-discharge branch pipe. The second first sub-switching valve is suitable for switching the gas in the second first sub-gas source connection pipe to be transported to the third first sub-mixing branch pipe, the fourth first sub-mixing branch pipe or the second first sub-discharge branch pipe. The first second sub-switching valve is suitable for switching the gas in the first second sub-gas source connection pipe 9 to be transported to the first second sub-mixing branch pipe, the second second sub-mixing branch pipe or the first second sub-discharge branch pipe. The second second sub-switching valve is suitable for switching the gas in the second second sub-gas source connection pipe to be transported to the third second sub-mixing branch pipe, the fourth second sub-mixing branch pipe or the second second sub-discharge branch pipe.

[0058] The semiconductor growth apparatus further includes a first growth connection pipe to an Mth growth connection pipe, all of which are connected to the growth main pipeline, and a first discharge connection pipe to an Mth discharge connection pipe, all of which are connected to the discharge main pipeline. The jth growth-discharge switching valve is suitable for switching the gas in the jth mixing main pipeline to be transported to the jth growth connection pipe or the jth discharge connection pipe.

[0059] Referring to FIG. 5, where M is equal to 2, the semiconductor growth apparatus includes a first growth connection pipe 201 and a second growth connection pipe 203, a first discharge connection pipe 202 and a second discharge connection pipe 204, and a first growth discharge switching valve 301 and a second growth discharge switching valve 302. The j-th growth discharge switching valve is suitable for switching the gas in the j-th mixed main pipeline to be transported to the j-th growth connection pipe or the j-th discharge connection pipe. The first growth discharge switching valve 301 is suitable for switching the gas in the first mixed main pipeline 131 to be transported to the first growth connection pipe 201 or the first discharge connection pipe 202. The second growth discharge switching valve 302 is suitable for switching the gas in the second mixed main pipeline 132 to be transported to the second growth connection pipe 203 or the second discharge connection pipe 204.

[0060] The semiconductor growth apparatus has a k-th growth branch pipe group with Q k individual k-th sub-growth branch pipes (not shown), a first growth branch pipe group to an N-th growth branch pipe group connected to the growth main pipeline 110, and a k-th additional discharge branch pipe group with Q k individual k-th sub-additional discharge branch pipes, a first additional discharge branch pipe group to an N-th additional discharge branch pipe group, and a k-th additional switching valve group with Q k individual k-th sub-additional switching valves, a first additional switching valve group to an N-th additional switching valve group. Further, the q k -th k-th sub-switching valve is suitable for switching the gas in the q k -th k-th sub-reaction gas source to be transported to any one of the M*(q k -1)+1-th to M*q k -th k-th sub-mixed branch pipes or the q k -th k-th sub-additional discharge branch pipe. The q k -th k-th sub-additional discharge branch pipe is suitable for switching the gas to be transported to the q k -th k-th sub-additional switching valve and then to the q k -th k-th sub-discharge branch pipe or the q k -th k-th sub-growth branch pipe.

[0061] In this embodiment, the same content as in the previous embodiment will not be described in detail.

[0062] Note that in the above Embodiment 1 and Embodiment 2, a common gas source is further provided. The common gas source is suitable for passing through the growth main pipeline 110, and the common gas source is continuously passed before, after, and during the growth interruption process. For example, the common gas source contains AsH3.

[0063] Embodiment 3 This embodiment provides a method for manufacturing a semiconductor structure using the above semiconductor growth apparatus, and the method includes: Step S1 of controlling the gas in the k1th (k1 is an integer from 1 to N) switching valve group to be transported to the j1th mixing main pipeline so that the j1th mixing main pipeline has the k1th reaction mixed gas; Step S2 of switching the j1th growth discharge switching valve to transport the k1th reaction mixed gas in the j1th mixing main pipeline to the growth main pipeline; After the j1th growth discharge switching valve is switched to transport the k1th reaction mixed gas in the j1th mixing main pipeline to the growth main pipeline, all of the first to Mth growth discharge switching valves are switched to communicate with the discharge main pipeline so as to perform a growth interruption process in the reaction chamber. Step S3; Step S4 of controlling the gas in the k2th (k2 is an integer from 1 to N and k2 is not equal to k1) switching valve group to be transported to the j2th (j2 is equal to or not equal to j1) mixing main pipeline so that the j2th mixing main pipeline has the k2th reaction mixed gas; After performing the growth interruption process, step S5 of switching the j2th growth discharge switching valve to transport the k2th reaction mixed gas in the j2th mixing main pipeline to the growth main pipeline.

[0064] When M is equal to 1, the step of controlling the k1 switching valve group to transport the gas in the k1 reaction gas source group to the j1 mixed main pipeline includes controlling the k1 switching valve group to transport the gas in the k1 reaction gas source group to the first mixed main pipeline. The step of switching the j1 growth discharge switching valve to transport the k1 reaction mixed gas in the j1 mixed main pipeline to the growth main pipeline includes switching the first growth discharge switching valve to transport the k1 reaction mixed gas in the first mixed main pipeline to the growth main pipeline. During or after the growth interruption process, the k2 switching valve group controls the gas in the k2 reaction gas source group to be transported to the j2 mixed main pipeline. The step of controlling the k2 switching valve group to transport the gas in the k2 reaction gas source group to the j2 mixed main pipeline includes controlling the k2 switching valve group to transport the gas in the k2 reaction gas source group to the first mixed main pipeline. The step of switching the j2 growth discharge switching valve to transport the k2 reaction mixed gas in the j2 mixed main pipeline to the growth main pipeline includes switching the first growth discharge switching valve to transport the k2 reaction mixed gas in the first mixed main pipeline to the growth main pipeline.

[0065] Taking the semiconductor growth apparatus of FIG. 4 as an example, the first switching valve group is controlled to transport the gas in the first reaction gas source group to the first mixing main pipeline, and the q1-th first sub-switching valve is controlled to transport the gas in the q1-th first sub-reaction gas source to the q1-th first sub-mixing branch pipeline. Thereby, the first mixing main pipeline has the first reaction mixed gas. The first growth discharge switching valve is switched to transport the first reaction mixed gas in the first mixing main pipeline to the growth main pipeline. Specifically, the first growth discharge switching valve is switched to transport the first reaction mixed gas in the first mixing main pipeline to the first growth connection pipeline. After the first growth discharge switching valve is switched to transport the first reaction mixed gas in the first mixing main pipeline to the growth main pipeline, the first growth discharge switching valve is switched to communicate with the discharge main pipeline so as to perform an interrupted growth process in the reaction chamber. Specifically, the first growth discharge switching valve is switched to communicate with the first discharge connection pipeline so as to perform an interrupted growth process in the reaction chamber. During or after the growth interruption process, the second switching valve group is controlled to transport the gas in the second reaction gas source group to the first mixing main pipeline. Specifically, the q2-th second sub-switching valve is controlled to transport the gas in the q2-th second sub-reaction gas source to the q2-th second sub-mixing branch pipeline. Thereby, the second mixing main pipeline has the second reaction mixed gas. After the interruption process, the first growth discharge switching valve is switched to transport the second reaction mixed gas in the first mixing main pipeline to the first growth connection pipeline.

[0066] When M is 2 or more and M is equal to N, j2 is not equal to j1, k1 is equal to j1, and k2 is equal to j2.

[0067] In other embodiments, M may be 2 or more and M may be smaller than N. In such a case, q kThe gas in the k-th sub-reaction gas source of the [[[ordinal number]]] may be mixed and transported in any of the j-th mixed main pipelines. In this case, before or after the k1 switching valve group controls the gas in the k1 reaction gas source group to be transported to the j1-th mixed main pipeline, the k3 switching valve group further includes a step of controlling the gas in the k3 reaction gas source group to be transported to the j3-th mixed main pipeline such that the j3-th mixed main pipeline has the k3 reaction mixed gas (where j3 is equal to j1), the j3 growth discharge switching valve switches to transport the k3 reaction mixed gas in the j3-th mixed main pipeline to the growth main pipeline, and an interruption growth process is installed between the step of switching the j3 growth discharge switching valve to transport the k3 reaction mixed gas in the j3-th mixed main pipeline to the growth main pipeline and the step of switching the j1 growth discharge switching valve to transport the k1 reaction mixed gas in the j1-th mixed main pipeline to the growth main pipeline. In another embodiment, before or after the k2 switching valve group controls the gas in the k2 reaction gas source group to be transported to the j2-th mixed main pipeline, the k3 switching valve group controls the gas in the k3 reaction gas source group to be transported to the j3-th mixed main pipeline such that the j3-th mixed main pipeline has the k3 reaction mixed gas (where j3 is equal to j2), the j3 growth discharge switching valve switches to transport the k3 reaction mixed gas in the j3-th mixed main pipeline to the growth main pipeline, and an interruption growth process is installed between the step of switching the j3 growth discharge switching valve to transport the k3 reaction mixed gas in the j3-th mixed main pipeline to the growth main pipeline and the step of switching the j2 growth discharge switching valve to transport the k2 reaction mixed gas in the j2-th mixed main pipeline to the growth main pipeline.

[0068] k3 is an integer from 1 to N, k3 is equal to k1, and not equal to k2.

[0069] The duration of the interruption growth process is 1 s to 10 s. In addition, during the process of performing steps 1 to 5, the common gas source is continuously passed through the growth main pipeline 110.

[0070] React the k1-th reaction mixed gas introduced into the reaction chamber to form the k1-th semiconductor film, and react the k2-th reaction mixed gas introduced into the reaction chamber to form the k2-th semiconductor film. Between the step of forming the k1-th semiconductor film and the step of forming the k2-th semiconductor film, it contributes to eliminating the retention of the residual source material after the reaction of the k1-th reaction mixed gas on the surface of the k1-th semiconductor film, and an interruption process advantageous for establishing a stable concentration gradient of the k2-th reaction mixed gas in the reaction chamber is performed. Also, the interruption process is such that the k1-th reaction gas source group is sufficiently mixed in the j1-th mixed main pipeline before the k1-th reaction mixed gas enters the reaction chamber, so that the times when the gases from different k1-th sub-reaction gas sources in the k1-th reaction gas source group enter the reaction chamber completely coincide. As described above, the steepness of the interface between the k1-th semiconductor film and the k2-th semiconductor film is improved.

[0071] Also, by reducing the growth rate of the epitaxial layer and increasing the growth interruption time, the gas stop time can be reduced, which is advantageous for establishing a faster and more stable concentration gradient.

[0072] Obviously, the above embodiments are merely examples for clear explanation and do not limit the embodiments. Those skilled in the art can make various other forms of changes or modifications based on the above description. Here, it is not necessary to cover all embodiments, nor is it possible to cover all embodiments. The obvious changes or modifications derived therefrom also belong to the patent scope of the present invention.

Claims

1. A semiconductor growth apparatus, comprising: a reaction chamber; a growth main pipeline with one end connected to the reaction chamber; an exhaust main pipeline; a first mixing main pipeline to an Mth (M is an integer greater than or equal to 1) mixing main pipeline; a first reaction gas source group to an Nth (N is an integer greater than or equal to 2) reaction gas source group; a first switching valve group to an Nth switching valve group suitable for controlling the kth (k is an integer greater than or equal to 1 and less than or equal to N) switching valve group to transport the gas in the kth reaction gas source group to the jth (j is an integer greater than or equal to 1 and less than or equal to M) mixing main pipeline; a first growth exhaust switching valve to an Mth growth exhaust switching valve suitable for switching the jth growth exhaust switching valve to transport the gas in the jth mixing main pipeline to the growth main pipeline or the exhaust main pipeline; a first growth connection pipe to an Mth growth connection pipe all connected to the growth main pipeline; a first exhaust connection pipe to an Mth exhaust connection pipe all connected to the exhaust main pipeline, wherein the jth growth exhaust switching valve is suitable for switching to transport the gas in the jth mixing main pipeline to the jth growth connection pipe or the jth exhaust connection pipe; M is greater than or equal to 2 and less than or equal to N, and the kth switching valve group is suitable for switching to transport the gas in the kth reaction gas source group to the jth mixing main pipeline or the exhaust main pipeline; further comprising a first mixing branch pipe group to an Nth mixing branch pipe group, the kth mixing branch pipe group comprises Qk * M pieces of the kth sub-mixing branch pipes, the (M * (qk - 1) + 1)th (qk is an integer greater than or equal to 1 and less than or equal to Qk) to the M * qkth of the kth sub-mixing branch pipes are respectively connected corresponding to the first mixing main pipeline to the Mth mixing main pipeline, the kth exhaust branch pipe group comprises the first kth sub-exhaust branch pipe to the Qkth kth sub-exhaust branch pipe, and the kth switching valve group comprises the first kth sub-switching valve to the Qkth kth sub-switching valve. The qk-th k-th sub-switching valve is suitable for switching the gas in the qk-th k-th sub-reaction gas source to be transported to a k-th sub-mixing branch pipe selected from among the M*(qk - 1)+1-th to M*qk-th k-th sub-mixing branch pipes or the qk-th k-th sub-discharge branch pipe. A semiconductor growth apparatus characterized by this.

2. In the first gas source connection pipe group to the Nth gas source connection pipe group, the kth gas source connection pipe group includes the first kth sub-gas source connection pipe to the Q k th kth sub-gas source connection pipe, and q k The th kth sub-gas source connection pipe is q k th kth sub-reaction gas source, and is connected to q k The q-th k-th sub-switching valve k switches the gas in the q-th k-th sub-gas source connection pipe to any one of the k-th sub-mixing branch pipes from the M*(q k −1)+1-th k-th sub-mixing branch pipe to the M*q k -th k-th sub-mixing branch pipe or transports it to the q k -th k-th sub-discharge branch pipe, and is suitable for switching, and the semiconductor growth apparatus according to claim 1, characterized in that.

3. The semiconductor growth apparatus according to claim 1, further comprising an organometallic chemical vapor deposition apparatus.

4. A method for manufacturing a semiconductor structure using the semiconductor growth apparatus according to any one of claims 1 to 3, The k-th 1 (where k 1 is an integer from 1 to N) the switching valve group is the j-th 1 controlling to transport the gas in the k-th reaction gas source group to the j-th mixing main pipeline so that the k-th reaction mixed gas is present in the mixing main pipeline; 1 the step of controlling to transport the gas in the k-th reaction gas source group to the j-th mixing main pipeline so that the k-th reaction mixed gas is present in the mixing main pipeline; 1 the gas in the k-th reaction gas source group to the j-th 1 mixing main pipeline, the j-th 1 The growth discharge switching valve switches the k-th 1 reaction mixed gas in the mixed main pipeline to be transported to the growth main pipeline, and the j-th 1 growth discharge switching valve switches the k-th 1 reaction mixed gas in the mixed main pipeline to be transported to the j-th 1 growth connection pipeline, and a step of 1 switching the k-th reaction mixed gas in the mixed main pipeline to be transported to the j-th 1 growth connection pipeline; the j-th 1 after the growth exhaust switching valve is switched to the j-th 1 in the k-th 1 After switching to transport the reaction mixed gas to the growth main pipeline, all of the first to M-th growth exhaust switching valves are switched to communicate with the exhaust main pipeline so as to perform a growth interruption process in the reaction chamber, and each of the first to M-th growth exhaust switching valves is switched to communicate with the first to M-th exhaust connection pipes, respectively; The kth 2 (where k 2 is an integer from 1 to N, and k 2 is not equal to k 1 ), the switching valve group transports the gas from the kth 2 (where j 2 is equal to or not equal to j 1 ) reaction gas source group to the jth 2 mixed main pipeline so that the jth 2 mixed main pipeline has the kth 2 reaction mixed gas, and a control step for transporting the gas in the reaction gas source group to the mixed main pipeline, After performing the growth interruption process, the j-th 2 The growth exhaust switching valve is the j-th 2 In the mixed main pipeline, the k-th 2 Switch to transport the reaction mixed gas to the growth main pipeline, and the j-th 2 The growth exhaust switching valve is the j-th 2 In the mixed main pipeline, the k-th 2 Transport the reaction mixed gas to the j-th 2 Switching to transport to the growth connection pipeline, and including where j2 is not equal to j1, M is 2 or more, and M is smaller than N, Before or after the k1-th switching valve group controls the gas in the k1-th reaction gas source group to be transported to the j1-th mixing main pipeline, the k3-th switching valve group controls the gas in the k3-th reaction gas source group to be transported to the j3-th (j3 is equal to j1) mixing main pipeline so that the j3-th mixing main pipeline has the k3-th reaction mixed gas, and the j3-th growth discharge switching valve switches to transport the k3-th reaction mixed gas in the j3-th mixing main pipeline to the growth main pipeline, or, Before or after the k2-th switching valve group controls the gas in the k2-th reaction gas source group to be transported to the j2-th mixing main pipeline, the k3-th switching valve group controls the gas in the k3-th reaction gas source group to be transported to the j3-th (j3 is equal to j2) mixing main pipeline so that the j3-th mixing main pipeline has the k3-th reaction mixed gas, and the j3-th growth discharge switching valve switches to transport the k3-th reaction mixed gas in the j3-th mixing main pipeline to the growth main pipeline. The method for manufacturing a semiconductor structure further includes the step of where k3 is an integer from 1 to N, k3 is not equal to k1, and k3 is not equal to k2. A method for manufacturing a semiconductor structure characterized by this.

5. The duration of the growth interruption process is 1 s to 10 s. The method for manufacturing a semiconductor structure according to claim 4, characterized by this.

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