Deflector for single crystal furnace, single crystal furnace, and processing method of deflector

Abstract

A flow guide tube (1) for a single crystal furnace (100), a single crystal furnace (100), and a processing method for the flow guide tube (1), wherein the inner contour line of the flow guide tube (1) includes a first straight line segment (11) extending in a vertical direction, a second straight line segment (13) having one end connected to the first straight line segment (11) and the other end extending upward at an incline, and a group of line segments (14), the angle α between the second straight line segment (13) and the vertical direction being ≧45°, the group of line segments (14) including a plurality of straight lines connected in sequence and having different inclination angles, and configured to transfer heat transferred from the crystal rod (5) onto the group of line segments (14) toward the water-cooled jacket (3).

Description

Cross - reference to related applications

[0001] This application is filed based on a Chinese patent application with the application number 202110320307.X and the filing date of March 25, 2021, claims the right of priority for the Chinese patent application, and the entire content of the Chinese patent application is incorporated into this application by reference.

Technical Field

[0002] This application relates to the technical field of single - crystal furnaces, and in particular, to a flow - guiding cylinder for a single - crystal furnace, a single - crystal furnace, and a processing method of the flow - guiding cylinder.

Background Art

[0003] During the growth of silicon crystals, latent heat of crystallization is generated near the solid - liquid interface. Generally, a flow - guiding cylinder around the crystal rod is provided above the crystal, and gas is introduced along the inside of the flow - guiding cylinder into the pulling - up area near the crystal rod to purge this area and remove the latent heat of crystallization. As the diameter of the single - crystal silicon rod increases, the temperature difference between the central part and the outer peripheral part of the crystal rod becomes larger, making it difficult not only to increase the crystallization rate but also excessive thermal stress is generated inside the crystal rod, resulting in defects such as holes and dislocation defects inside the crystal rod, which affects the processing quality of the crystal rod.

Summary of the Invention

Problems to be Solved by the Invention

[0004] This application provides a flow - guiding cylinder for a single - crystal furnace that can improve the processing quality of a crystal rod.

Means for Solving the Problems

[0005] This application further provides a single - crystal furnace including the above - mentioned flow - guiding cylinder for a single - crystal furnace.

[0006] This application further provides a processing method of a flow - guiding cylinder, and uses the processing method to process the above - mentioned flow - guiding cylinder for a single - crystal furnace.

[0007] According to the deflector for a single crystal furnace according to an embodiment of the present application, it includes a deflector, a furnace body, a water-cooled jacket, and a crucible. The deflector, the water-cooled jacket, and the crucible are all provided in the furnace body. A crystal rod is formed in the crucible. The deflector and the water-cooled jacket are both provided around the crystal rod, and the water-cooled jacket is located above the deflector. A plane where the axial cross-section of the crystal rod is located is defined as a reference plane. The deflector is cut by the reference plane to form a cut surface. The inner contour line located on the crystal rod side of the cut surface is a first straight line segment extending in the vertical direction. One end adjacent to the liquid level of the crucible is a first straight line segment spaced from the liquid level. One end is connected to the end of the first straight line segment departing from the crucible, and the other end is a second straight line segment extending obliquely upward in a direction departing from the crystal rod. The angle formed with the vertical direction is α, and α≥45°. It includes a plurality of straight line segments connected in sequence and having different inclination angles. One end is connected to the other end of the second straight line segment, and the other end is a line segment group extending obliquely upward in a direction departing from the crystal rod. The heat transmitted from the crystal rod to the line segment group is transmitted toward the water-cooled jacket, and is configured to prevent the heat from being transmitted back to the crystal rod by using the water-cooled jacket.

[0008] According to the deflector for a single crystal furnace according to an embodiment of the present application, by setting the second straight line segment, when the heat on the crystal rod is incident on the second straight line segment along the radial direction of the crystal rod, since the angle formed by the second straight line segment and the vertical direction is 45° or more, the incident angle of the heat at this part on the second straight line segment is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, at the second straight line segment The reflection direction of the reflected heat and the incident direction of the heatThe angle formed with [it] is 90° or more. Therefore, the heat in this part can be transmitted in a direction parallel to the outer wall surface of the crystal rod or in a direction away from the outer wall surface of the crystal rod after being reflected, and it is possible to avoid the heat in this part being reflected and returning to the crystal rod. By setting the line segment group, the heat transmitted from the crystal rod to the line segment group can be transmitted to the water-cooled jacket after being reflected by the line segment group, and the use of the water-cooled jacket can prevent the heat from being transmitted back to the crystal rod conversely. Thus, the cooling of the crystal rod can be accelerated, which is advantageous for reducing the thermal stress in the crystal rod, avoiding the occurrence of holes and dislocation defects inside the crystal rod, and improving the production quality of the crystal rod.

[0009] In some embodiments of the present application, in the radial direction of the crystal rod, one end of the second straight line segment that is away from the crystal rod is flush with the outer edge of the water-cooled jacket or is located outside the outer edge of the water-cooled jacket.

[0010] In some embodiments of the present application, α satisfies 50° ≥ α ≥ 45°.

[0011] In some embodiments of the present application, both ends of the straight line segment are defined as end A and end B respectively, the orthogonal projection of end A on the crystal rod is defined as C, the outer edge in the radial direction of the water-cooled jacket is defined as D, and the inner edge in the radial direction of the water-cooled jacket is defined as E. It satisfies that the line segment AB is perpendicular to the angular bisector of ∠EAC and the line segment AE is parallel to the line segment BD, and end A is the end adjacent to the crystal rod of the straight line segment.

[0012] In some embodiments of the present application, the number of the straight line segments included in the line segment group is X, and it satisfies 30 ≥ X ≥ 10.

[0013] In some embodiments of the present application, in the axial direction of the crystal rod, the distance between one end of the first straight line segment adjacent to the liquid surface and the liquid surface is L, and it satisfies 50 mm ≥ L ≥ 20 mm.

[0014] In some embodiments of the present application, from the inside to the outside in the radial direction of the furnace body, the distance between the bottom surface of the deflector cylinder and the liquid level gradually decreases, the angle formed by the bottom surface of the deflector cylinder and the liquid level is β, and 8° ≥ β ≥ 1° is satisfied.

[0015] In some embodiments of the present application, the liquid level forms a first arc surface with the inner peripheral wall of the crucible, and the connection location between the bottom wall of the deflector cylinder and the outer peripheral wall of the deflector cylinder forms a second arc surface set parallel to the first arc surface.

[0016] In some embodiments of the present application, the liquid level forms a third arc surface with the outer peripheral wall of the crystal bar, and the connection location between the bottom wall of the deflector cylinder and the inner peripheral wall of the deflector cylinder forms a fourth arc surface set parallel to the third arc surface.

[0017] According to the single crystal furnace of the embodiment of the present application, it includes a furnace body, a crucible provided in the furnace body, the crucible having a storage space inside which a crystal bar is formed, a water-cooled jacket, and the deflector cylinder for the single crystal furnace. The deflector cylinder and the water-cooled jacket are both provided in the furnace body, and the water-cooled jacket is located above the deflector cylinder.

[0018] According to the single crystal furnace of the embodiment of the present application, by setting the second line segment, when the heat on the crystal bar is incident on the second line segment along the radial direction of the crystal bar, since the angle formed by the second line segment and the vertical direction is 45° or more, the incident angle of the heat at this part to the second line segment is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, at the second line segment The reflection direction of the reflected heat and the incident direction of the heatThe angle formed with [it] is 90° or more. Therefore, the heat in this portion can be transmitted in a direction parallel to the outer wall surface of the crystal bar after being reflected, or can be transmitted in a direction away from the outer wall surface of the crystal bar, and it is possible to avoid the heat in this portion being reflected and returning to the crystal bar. By setting the line segment group, the heat transmitted from the crystal bar to the line segment group can be transmitted to the water-cooled jacket after being reflected by the line segment group, and the use of the water-cooled jacket can prevent the heat from being transmitted back to the crystal bar conversely. Thus, the cooling of the crystal bar can be accelerated, which is advantageous for reducing the thermal stress in the crystal bar, and it is possible to avoid the occurrence of holes and dislocation defects inside the crystal bar, and the production quality of the crystal bar can be improved.

[0019] In some embodiments of the present application, the water-cooled jacket is provided around the crystal bar and includes a first connecting portion extending in the axial direction of the crystal bar, and a second connecting portion connected to one end of the first connecting portion adjacent to the liquid surface and extending in the radial direction of the crystal bar.

[0020] In some embodiments of the present application, the surface of the second connecting portion adjacent to the liquid surface is formed into a first curved surface that is concave toward the first connecting portion.

[0021] In some embodiments of the present application, the surface of the second connecting portion adjacent to the crystal bar is formed into a second curved surface that is concave in a direction away from the crystal bar.

[0022] According to the processing method of the flow guide cylinder according to the embodiments of the present application, the flow guide cylinder is the flow guide cylinder for the single crystal furnace, the line segment group includes straight line segment 1 to straight line segment N that are connected in sequence and have different inclination angles, when the outer edge in the radial direction of the water-cooled jacket is defined as D and the inner edge in the radial direction of the water-cooled jacket is defined as E, the step of processing the first straight line segment, and the step of processing the second straight line segment, wherein the starting point of the second straight line segment is the upper end point of the first straight line segment, the end point of the second straight line segment is point A1, and the step that point A1 is flush with point D of the water-cooled jacket in the radial direction of the crystal bar. The step of machining the first straight line segment, wherein the starting point of the first straight line segment is A1, the ending point of the first straight line segment is B1, the orthogonal projection of point A1 onto the crystal bar is point C1, taking point A1 as the starting point, creating a first reference line that is perpendicular to the angle bisector of ∠EA1C1 and obliquely upward, translating EA1 to the position of point D to form an intersection point B1 with the first reference line, and taking A1B1 as the first straight line segment, including the step of The step of machining the second straight line segment, wherein the starting point of the second straight line segment is A2 which coincides with point B1 of the first straight line segment, the ending point of the second straight line segment is B2, the orthogonal projection of point A2 onto the crystal bar is point C2, taking point A2 as the starting point, creating a second reference line that is perpendicular to the angle bisector of ∠EA2C2 and obliquely upward, translating EA2 to the position of point D to form an intersection point B2 with the second reference line, and taking A2B2 as the second straight line segment, including the step of The step of machining the third straight line segment, wherein the starting point of the third straight line segment is A3 which coincides with point B2 of the second straight line segment, the ending point of the third straight line segment is B3, the orthogonal projection of point A3 onto the crystal bar is point C3, taking point A3 as the starting point, creating a third reference line that is perpendicular to the angle bisector of ∠EA3C3 and obliquely upward, translating EA3 to the position of point D to form an intersection point B3 with the third reference line, and taking A3B3 as the third straight line segment, including the step of In this way, finally, the step of machining the Nth straight line segment, wherein the starting point of the Nth straight line segment is An, the ending point of the Nth straight line segment is Bn, the orthogonal projection of point An onto the crystal bar is point Cn, taking point An as the starting point, creating an Nth reference line that is perpendicular to the angle bisector of ∠EAnCn and obliquely upward, translating EAn to the position of point D to form an intersection point Bn with the Nth reference line, and taking AnBn as the Nth straight line segment, including the step of, where N satisfies N > 3.

[0023] According to the method for processing the deflector tube according to the embodiment of the present application, by setting the second straight line segment, when the heat on the crystal bar is incident on the second straight line segment along the radial direction of the crystal bar, the angle formed by the second straight line segment and the vertical direction is 45° or more. Therefore, the angle of incidence of the heat in this part on the second straight line segment is also 45° or more. According to the principle that the reflection angle is equal to the angle of incidence, the angle formed by the second straight line segment and The reflection direction of the reflected heat and the incident direction of the heat is 90° or more. Therefore, the heat in this part can be transmitted in a direction parallel to the outer wall surface of the crystal bar or in a direction away from the outer wall surface of the crystal bar after being reflected, and it is possible to avoid the heat in this part being reflected and returning to the crystal bar. In addition, by setting the line segment group, the heat transmitted from the crystal bar to the line segment group can be transmitted to the water-cooled jacket after being reflected by the line segment group, and the water-cooled jacket is used to prevent the heat from being transmitted back to the crystal bar conversely. Therefore, the cooling of the crystal bar can be accelerated, which is advantageous for reducing the thermal stress in the crystal bar, avoiding the occurrence of holes and dislocation defects inside the crystal bar, and improving the production quality of the crystal bar.

[0024] Further aspects and advantages of the present application will be given in part in the following description, some will become apparent from the following description, or will be understood from the practice of the present application.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Explanation of Reference Numerals

[0026] Single crystal furnace 100, Deflector 1, first straight line segment 11, second straight line segment 13, line segment group 14, straight line segment one 141, straight line segment two 142, straight line segment three 143, straight line segment four 144, straight line segment five 145, second arc surface 15, fourth arc surface 16, furnace body 2, water-cooled jacket 3, first connecting part 31, second connecting part 32, first curved surface 321, second curved surface 322, third curved surface 323, crucible 4, first arc surface 41, third arc surface 42, crystal bar 5.

Embodiments for Carrying Out the Invention

[0027] Hereinafter, embodiments of the present application will be described in detail, and examples of the embodiments are shown in the accompanying drawings. The same or similar reference numerals from beginning to end indicate the same or similar elements, or elements having the same or similar functions. The embodiments described below with reference to the drawings are exemplary and are intended to be used for explaining the present application and should not be construed as limiting the present application.

[0028] The following disclosure provides a number of different embodiments or examples for implementing different configurations of the present application. Hereinafter, for the purpose of simplifying the disclosure of the present application, specific exemplary members and settings will be described. Of course, these are merely examples and do not limit the present application. It should be noted that in different examples of the present application, references to numbers and / or alphabets can be repeated. Such repetition is for the purpose of simplification and clarity and does not itself indicate the relationship between the various embodiments and / or settings being discussed. It should be noted that the present application provides examples of various specific processes and materials, but those skilled in the art can recognize the applicability of other processes and / or the use of other materials.

[0029] Hereinafter, the deflector 1 for the single crystal furnace 100 according to the embodiments of the present application will be described with reference to the drawings. The single crystal furnace 100 includes a deflector 1, a furnace body 2, a water-cooled jacket 3, and a crucible 4. The deflector 1, the water-cooled jacket 3, and the crucible 4 are all provided inside the furnace body 2. A crystal rod 5 is formed inside the crucible 4. The deflector 1 and the water-cooled jacket 3 are both provided around the crystal rod 5, and the water-cooled jacket 3 is located above the deflector 1.

[0030] For example, in an example of the present application, the crucible 4 has a storage space, and a silicon raw material for heating and melting is arranged in the storage space. A heater for heating the crucible 4 is provided inside the furnace body 2. By heating with the heater, the silicon raw material in the storage space can be melted into silicon liquid. Inside the furnace body 2, a deflector 1 and an argon gas pipe are further provided. The argon gas pipe passes through the top of the furnace body 2 and enters the furnace body 2, passes through the argon gas passage formed by the deflector 1 and the crystal rod 5, and promotes the growth of the crystal rod. Inside the furnace body 2, a water-cooled jacket 3 is further provided. The water-cooled jacket 3 is provided around the crystal rod 5 and is located above the deflector 1. It is configured to absorb the heat radiated from the crystal rod 5 and transfer it outside, thereby improving the heat dissipation efficiency of the crystal rod 5.

[0031] As shown in FIGS. 1 and 2, a plane where the axial cross-section of the crystal rod 5 is located is defined as a reference plane. The deflector 1 is cut by the reference plane to form a cut surface. The inner contour line located on the crystal rod 5 side of the cut surface includes a first straight line segment 11, a second straight line segment 13, and a line segment group 14.

[0032] Specifically, as shown in FIG. 1, the first straight line segment 11 extends in the vertical direction, and one end of the first straight line segment 11 adjacent to the liquid surface of the crucible 4 is spaced apart from the liquid surface. Thereby, an air flow path for argon can be formed between the bottom end of the first straight line segment 11 and the liquid surface of the silicon liquid. Since the first straight line segment 11 is a straight line segment having a certain distance, a stable temperature gradient can be maintained in the region close to the liquid surface, which is advantageous for the growth of the crystal bar. Note that the length of the first straight line segment 11 should be equal to or greater than the height of the shoulder ring with respect to the growth diameter of the crystal bar 5. For example, in some embodiments of the present application, when an 8-inch crystal bar is grown, the Height of the shoulder ring is about 90 mm, but the length of the first straight line segment 11 should be 90 mm or more. When a 12-inch crystal bar is grown, the Height of the shoulder ring is about 160 mm, but the length of the first straight line segment 11 should be 160 mm or more.

[0033] As shown in FIGS. 2 and 3, one end of the second straight line segment 13 is connected to one end of the first straight line segment 11 that is separated from the crucible 4, and the other end extends upward obliquely in a direction away from the crystal bar 5. The angle formed by the second straight line segment 13 and the vertical direction is α (α shown in FIG. 3), and α ≧ 45°. By setting the second straight line segment 13, when the heat on the crystal bar 5 is incident on the second straight line segment 13 along the radial direction of the crystal bar 5, since the angle formed by the second straight line segment 13 and the vertical direction is 45° or more, the incident angle of the heat of this part on the second straight line segment 13 is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, the angle formed by the second straight line segment 13 and The reflection direction of the reflected heat and the incident direction of the heat is 90° or more. Therefore, the heat of this part can be transmitted in a direction parallel to the outer wall surface of the crystal bar 5 or in a direction away from the outer wall surface of the crystal bar 5 after being reflected, and it is possible to avoid the heat of this part being reflected and returning to the crystal bar 5. Thus, the cooling of the crystal bar 5 can be accelerated, which is advantageous for reducing the thermal stress in the crystal bar 5, and it is possible to avoid the occurrence of holes and dislocation defects inside the crystal bar 5, and the production quality of the crystal bar 5 can be improved.

[0034] Specifically, in some embodiments of the present application, the angle formed by the second line segment 13 and the vertical direction may be 45°, 48°, 50°, 55°, 60°, etc. The angle formed by the second line segment 13 and the vertical direction can be specifically selected and set according to the model number and size of the single crystal furnace 100.

[0035] For example, in an example of the present application, the angle formed by the second line segment 13 and the vertical direction is 45°. When the heat on the crystal rod 5 is incident on the second line segment 13 along the radial direction of the crystal rod 5, the incident angle formed by the heat on the second line segment 13 is 45°. According to the principle that the reflection angle is equal to the incident angle, the reflection angle is also 45°. Since the second line segment 13 is set to be inclined upward, the reflected heat is transmitted vertically upward, that is, the reflected heat is transmitted along the direction parallel to the outer wall surface of the crystal rod 5, and it is possible to avoid the heat in this part being reflected and returning to the crystal rod 5.

[0036] Also, for example, in another example of the present application, the angle formed by the second line segment 13 and the vertical direction is 60°. When the heat on the crystal rod 5 is incident on the second line segment 13 along the radial direction of the crystal rod 5, the incident angle formed by the heat on the second line segment 13 is 60°. According to the principle that the reflection angle is equal to the incident angle, the reflection angle is also 60°. Since the second line segment 13 is set to be inclined upward, the reflected heat is transmitted in a direction inclined upward and away from the crystal rod 5, that is, the reflected heat is transmitted upward along the direction away from the crystal rod 5, and it is possible to avoid the heat in this part being reflected and returning to the crystal rod 5.

[0037] As shown in FIGS. 2 and 3, the line segment group 14 includes a plurality of straight line segments that are sequentially connected and have different inclination angles. One end thereof is connected to the other end of the second straight line segment 13, and the other end extends upward while inclining in a direction away from the crystal bar 5. As can be understood, the line segment group 14 includes a plurality of straight line segments that are sequentially connected, and each straight line segment extends upward while inclining in a direction away from the crystal bar 5. For example, the line segment group 14 includes five straight line segments. The first straight line segment is connected to the second straight line segment 13, the second straight line segment is connected to the first straight line segment, the third straight line segment is connected to the second straight line segment, the fourth straight line segment is connected to the third straight line segment, and the fifth straight line segment is connected to the fourth straight line segment.

[0038] As shown in FIGS. 1 to 3, the line segment group 14 is configured to transfer the heat transferred from the crystal bar 5 to the line segment group 14 toward the water-cooled jacket 3, and use the water-cooled jacket 3 to prevent the heat from being transferred back to the crystal bar 5. As can be understood, the heat transferred from the crystal bar 5 to the line segment group 14 is transferred to the water-cooled jacket 3 after being reflected by the line segment group 14, and the water-cooled jacket 3 can be used to prevent the heat from being transferred back to the crystal bar 5. Therefore, the cooling of the crystal bar 5 can be accelerated, which is advantageous for reducing the thermal stress in the crystal bar 5, avoiding the occurrence of holes and dislocation defects inside the crystal bar 5, and improving the production quality of the crystal bar 5. In addition, by setting the second straight line segment 13 and the line segment group 14, the cooling of the crystal bar 5 can be accelerated, so the time in the heat dissipation stage of the crystal bar 5 in the manufacturing process can be shortened, and the production efficiency of the crystal bar 5 can be increased.

[0039] According to the deflector 1 for the single crystal furnace 100 of the embodiment of the present application, by setting the second straight line segment 13, when the heat on the crystal bar 5 is incident on the second straight line segment 13 along the radial direction of the crystal bar 5, since the angle formed by the second straight line segment 13 and the vertical direction is 45° or more, the incident angle of the heat at this part to the second straight line segment 13 is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, at the second straight line segment 13 The reflection direction of the reflected heat and the incident direction of the heatThe angle formed with [the relevant object] is 90° or more. Therefore, the heat in this part can be transmitted in a direction parallel to the outer wall surface of the crystal bar 5 or in a direction away from the outer wall surface of the crystal bar 5 after being reflected, and it is possible to avoid the heat in this part being reflected and returning to the crystal bar 5. By setting the line segment group 14, the heat transmitted from the crystal bar 5 to the line segment group 14 can be transmitted to the water-cooled jacket 3 after being reflected by the line segment group 14, and the water-cooled jacket 3 is used to prevent the heat from being transmitted back to the crystal bar 5 conversely. Thus, the cooling of the crystal bar 5 can be accelerated, which is advantageous for reducing the thermal stress in the crystal bar 5, and it is possible to avoid the occurrence of holes and dislocation defects inside the crystal bar 5, and the production quality of the crystal bar 5 can be improved.

[0040] In some embodiments of the present application, as shown in FIGS. 1 to 3, in the radial direction of the crystal bar 5, one end of the second straight line segment 13 away from the crystal bar 5 is flush with the outer edge of the water-cooled jacket 3 or is located outside the outer edge of the water-cooled jacket 3. In other words, in the radial direction of the crystal bar 5, one end of the second straight line segment 13 away from the crystal bar 5 (i.e., the upper end of the second straight line segment 13) may be flush with the outer edge of the water-cooled jacket 3, or in the radial direction of the crystal bar 5, one end of the second straight line segment 13 away from the crystal bar 5 is located outside the outer edge of the water-cooled jacket 3. Thereby, the heat reflected by the second straight line segment 13 can be reflected on the outer edge of the water-cooled jacket 3 or can be reflected outside the water-cooled jacket 3. For example, in one specific exemplary embodiment of the present application, in the radial direction of the crystal bar 5, one end of the second straight line segment 13 away from the crystal bar 5 is flush with the outer edge of the water-cooled jacket 3.

[0041] In some embodiments of the present application, as shown in FIGS. 1 to 3, α satisfies 50° ≥ α ≥ 45°. As can be understood, by setting the angle formed by the second line segment 13 and the vertical direction between 45° and 50°, on the premise of ensuring that heat returns to the crystal rod 5, the radius of the upper end of the second line segment 13 can be reduced, thereby reducing the size of the flow guide cylinder 1 and the space occupied by the flow guide cylinder 1. For example, in some illustrations of the present application, the angle formed by the second line segment 13 and the vertical direction may be 45°, 46°, 47°, 48°, 49° or 50°.

[0042] In some embodiments of the present application, both ends of the line segment are respectively defined as end A and end B, the orthographic projection of end A on the crystal rod 5 is defined as C, the outer edge in the radial direction of the water-cooled jacket 3 is defined as D, and the inner edge in the radial direction of the water-cooled jacket 3 is defined as E. Then, the line segment AB is perpendicular to the angle bisector of ∠EAC, and the line segment AE is set parallel to the line segment BD. Here, end A is the end adjacent to the crystal rod 5 of the line segment.

[0043] As can be understood, each line segment in the line segment group 14 satisfies the above situation. With the above settings, the heat incident on the line segment from the crystal rod 5 can be reflected by the line segment and then reflected to E on the inner edge of the water-cooled jacket 3. Thereby, the use of the water-cooled jacket 3 can realize the blocking of heat, and effectively avoid the heat returning to the crystal rod 5.

[0044] For example, regarding the heat at point C of the crystal rod 5, the heat in this part can be transmitted to end A of the line segment, and after being reflected at end A, it can be transmitted to point E of the water-cooled jacket 3. That is, since CA is considered the incident path of the heat in this part, the normal line of the incident surface AB is the angle bisector of ∠EAC. Therefore, the transmission path reflected by the line segment is AE. Since the reflected heat is transmitted to the inner edge of the water-cooled jacket 3, the heat returning to the crystal rod 5 can be effectively avoided. Since each line segment has the same characteristics, the heat reflected by each line segment is transmitted to E on the inner edge of the water-cooled jacket 3.

[0045] Specifically, in one specific example of the present application, the processing procedures of the second line segment 13 and the line segments 141, 142, 143, 144, ……, line segment N of the line segment group 14 are as follows.

[0046] The first step: Process the second line segment 13. The starting point of the second line segment 13 is the upper endpoint of the first line segment 11, and the ending point of the second line segment 13 is point A1. Point A1 is flush with point D of the water-cooled jacket 3 in the radial direction of the crystal bar 5. Here, the second line segment 13 extends obliquely outward along the direction of the inclination angle of 45°.

[0047] The second step: Process the first line segment 141. The starting point of the first line segment 141 is A1, and the ending point is B1. The orthogonal projection of point A1 on the crystal bar 5 is point C1. Specifically, first find the angle bisector of ∠EA1C1. Starting from point A1, create a wall surface that is perpendicular to the angle bisector of ∠EA1C1 and obliquely upward. Also, translate EA1 to the position of point D to form the intersection point B1 with the above wall surface, and set A1B1 as the first line segment 141.

[0048] The third step: Process the second line segment 142. The starting point of the second line segment 142 is A2 that coincides with point B1 in the first line segment 141, and the ending point of the second line segment 142 is B2. The orthogonal projection of point A2 on the crystal bar 5 is point C2. Specifically, first find the angle bisector of ∠EA2C2. Starting from point A2, create a wall surface that is perpendicular to the angle bisector of ∠EA2C2 and obliquely upward. Also, translate EA2 to the position of point D to form the intersection point B2 with the above wall surface, and set A2B2 as the second line segment 142.

[0049] The fourth step: Process the third line segment 143. The starting point of the third line segment 143 is A3 that coincides with point B2 in the second line segment 142, and the ending point of the third line segment 143 is B3. The orthogonal projection of point A3 on the crystal bar 5 is point C3. Specifically, first find the angle bisector of ∠EA3C3. Starting from point A3, create a wall surface that is perpendicular to the angle bisector of ∠EA3C3 and obliquely upward. Also, translate EA3 to the position of point D to form the intersection point B3 with the above wall surface, and set A3B3 as the third line segment 143.

[0050] Step 5: Process line segment four 144. The starting point of line segment four 144 is A4 which coincides with point B3 in line segment three 143, the ending point of line segment four 144 is B4, and the orthogonal projection of point A4 onto the crystal bar 5 is point C4. Specifically, first find the angle bisector of ∠EA4C4. Starting from point A4, create a wall surface that is perpendicular to the angle bisector of ∠EA4C4 and slopes upward. Also, translate EA4 to the position of point D to form the intersection point B4 with the above wall surface, and set A4B4 as line segment four 144.

[0051] Step 6: Process line segment five 145. The starting point of line segment five 145 is A5 which coincides with point B4 in line segment four 144, the ending point of line segment five 145 is B5, and the orthogonal projection of point A5 onto the crystal bar 5 is point C5. Specifically, first find the angle bisector of ∠EA5C5. Starting from point A5, create a wall surface that is perpendicular to the angle bisector of ∠EA5C5 and slopes upward. Also, translate EA5 to the position of point D to form the intersection point B5 with the above wall surface, and set A5B5 as line segment five 145.

[0052] Step 7: Process line segment six. The starting point of line segment six is A6 which coincides with point B5 in line segment five 145, the ending point of line segment six is B6, and the orthogonal projection of point A6 onto the crystal bar 5 is point C6. Specifically, first find the angle bisector of ∠EA6C6. Starting from point A6, create a wall surface that is perpendicular to the angle bisector of ∠EA6C6 and slopes upward. Also, translate EA6 to the position of point D to form the intersection point B6 with the above wall surface, and set A6B6 as line segment six.

[0053] Assuming that the line segment group 14 contains 24 line segments in this way, the processing steps of line segment twenty - four are as follows.

[0054] The starting point of line segment 24 coincides with point A24 which is superimposed on point B23 in line segment 23. The ending point of line segment 24 is B24, and the orthogonal projection of point A24 onto the crystal bar 5 is point C24. Specifically, first, find the angular bisector of ∠EA24C24. Starting from point A24, create a wall surface that is perpendicular to the angular bisector of ∠EA24C24 and slopes upward. Also, translate EA24 to the position of point D to form the intersection point B24 with the above wall surface, and set A24B24 as line segment 24.

[0055] In some embodiments of the present application, as shown in FIGS. 1 to 3, the number of line segments included in the line segment group 14 is X, and 30 ≥ X ≥ 10 is satisfied. As can be understood, the number of line segments is related to the size of the draft tube 1, the relative position between the draft tube 1 and the water-cooled jacket 3, and the relative position between the draft tube 1 and the crystal bar 5. By setting the number of line segments between 10 and 30, the requirements for the number in many cases can be satisfied, and the needs of users can be better met. For example, in an example of the present application, the number of line segments included in the line segment group 14 is 10, 12, 14, 16, 18, 20, 22, 24, 26, 28, or 30.

[0056] In some embodiments of the present application, as shown in FIGS. 1 and 4, in the axial direction of the crystal bar 5, the distance between one end adjacent to the liquid surface of the first line segment 11 and the liquid surface is L (L shown in FIG. 4), and 50 mm ≥ L ≥ 20 mm is satisfied. As can be understood, the problem that the seed crystal is likely to break when shoulder-ringing can be avoided by setting the distance between one end adjacent to the liquid surface of the first line segment 11 and the liquid surface between 20 and 50 mm, because it can ensure that the temperature gradient at the position of this part does not change and the air flow does not change much either.

[0057] For example, in an example of the present application, the processing process of the crystal bar 5 is as follows. A high-purity polycrystalline silicon raw material is placed in the crucible 4 of the single crystal furnace 100, heated and melted under the protection of a low-vacuum flowing inert gas. One single crystal silicon (also referred to as a seed crystal) having a specific growth direction is placed in the seed crystal gripping device, the seed crystal is brought into contact with the silicon solution, and after adjusting the temperature of the molten silicon solution to approach the melting point temperature, the seed crystal is driven to rotate into the molten silicon solution from top to bottom, and then the seed crystal is gradually pulled up. When the seed crystal enters the growth of the cone part and the diameter of the cone approaches the target diameter, the pulling speed of the seed crystal is increased so that the diameter of the single crystal silicon does not increase further, and it enters the middle growth stage of the crystal. When the growth of the single crystal silicon approaches the end, the pulling speed of the seed crystal is increased again, and the single crystal silicon gradually detaches from the molten silicon to form a lower cone and ends the growth.

[0058] Specifically, in some exemplifications of the present application, in the axial direction of the crystal bar 5, the distance between one end adjacent to the liquid surface of the first straight line segment 11 and the liquid surface is 20 mm, 25 mm, 30 mm, 35 mm, 40 mm, 45 mm, or 50 mm.

[0059] In some embodiments of the present application, as shown in FIGS. 1 and 4, in the radial direction of the furnace body 2 from the inside to the outside, the distance between the bottom surface of the deflector cylinder 1 and the liquid surface gradually decreases, and the angle formed by the bottom surface of the deflector cylinder 1 and the liquid surface is β (β shown in FIG. 4), and 8° ≥ β ≥ 1° is satisfied. As can be understood, the temperature of the free liquid surface of the silicon liquid gradually increases as the distance from the wall of the crucible 4 decreases, and as the temperature difference increases, the Marangoni also increases, accelerating the transport of oxygen from the inner wall of the crucible 4 to the solid-liquid interface and affecting the production quality of the crystal bar 5. In the present application, in the radial direction of the furnace body 2 from the inside to the outside, by gradually decreasing the distance between the bottom surface of the deflector cylinder 1 and the liquid surface, when the argon gas flows through the passage between the bottom surface of the deflector cylinder 1 and the liquid surface, the flow rate of the argon gas is gradually increased, thereby lowering the temperature of the location near the wall of the crucible 4 and weakening the heat convection and oxygen transport.

[0060] In some embodiments of the present application, as shown in FIG. 4, the liquid surface forms the inner peripheral wall of the crucible 4 and the first arc surface 41, and the connection point between the bottom wall of the draft tube 1 and the outer peripheral wall of the draft tube 1 forms a second arc surface 15 that is set parallel to the first arc surface 41. As can be understood, by setting the second arc surface 15 parallel to the first arc surface 41 at the connection point between the bottom wall of the draft tube 1 and the outer peripheral wall of the draft tube 1, the resistance of the flow of argon gas can be reduced, thereby improving the flow rate of argon gas and weakening heat convection and oxygen transport.

[0061] In some embodiments of the present application, as shown in FIG. 1, the liquid surface forms the outer peripheral wall of the crystal bar 5 and the third arc surface 42, and the connection point between the bottom wall of the draft tube 1 and the inner peripheral wall of the draft tube 1 forms a fourth arc surface 16 that is set parallel to the third arc surface 42. As can be understood, by setting the fourth arc surface 16 parallel to the third arc surface 42 at the connection point between the bottom wall of the draft tube 1 and the inner peripheral wall of the draft tube 1, the resistance of the flow of argon gas can be reduced, thereby improving the flow rate of argon gas and being able to deprive more oxygen.

[0062] Hereinafter, the single crystal furnace 100 according to the embodiments of the present application will be described with reference to the drawings.

[0063] As shown in FIG. 1, the single crystal furnace 100 according to the embodiment of the present application includes a furnace body 2, a crucible 4, a water-cooled jacket 3, and a draft tube 1. The crucible 4 is provided in the furnace body 2. The crucible 4 has a storage space, and a crystal bar 5 is formed in the storage space. The draft tube 1 and the water-cooled jacket 3 are both provided in the furnace body 2, and the water-cooled jacket 3 is located above the draft tube 1.

[0064] According to the single crystal furnace 100 according to the embodiment of the present application, by setting the second straight line segment 13, when the heat on the crystal bar 5 is incident on the second straight line segment 13 along the radial direction of the crystal bar 5, since the angle formed by the second straight line segment 13 and the vertical direction is 45° or more, the incident angle of the heat of this part on the second straight line segment 13 is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, at the second straight line segment 13 The reflection direction of the reflected heat and the incident direction of the heatThe angle formed with [it] is 90° or more. Therefore, the heat in this part can be transmitted in a direction parallel to the outer wall surface of the crystal rod 5 or in a direction away from the outer wall surface of the crystal rod 5 after being reflected, and it is possible to avoid the heat in this part being reflected and returning to the crystal rod 5. By setting the line segment group 14, the heat transmitted from the crystal rod 5 to the line segment group 14 can be transmitted to the water-cooled jacket 3 after being reflected by the line segment group 14, and the water-cooled jacket 3 is used to prevent the heat from being transmitted back to the crystal rod 5 conversely. Thus, the cooling of the crystal rod 5 can be accelerated, which is advantageous for reducing the thermal stress in the crystal rod 5, and it is possible to avoid the occurrence of holes and dislocation defects inside the crystal rod 5, and the production quality of the crystal rod 5 can be improved.

[0065] In some embodiments of the present application, as shown in FIG. 5, the water-cooled jacket 3 includes a first connecting portion 31 and a second connecting portion 32. The first connecting portion 31 is provided around the crystal rod 5 and extends in the axial direction of the crystal rod 5. The second connecting portion 32 is connected to one end adjacent to the liquid level of the first connecting portion 31 and extends in the radial direction of the crystal rod 5. As can be understood, the cross-section located on the crystal rod 5 side of the water-cooled jacket 3 is formed in an inverted T shape. With the above design, the width of the lower edge portion of the water-cooled jacket 3 can be increased, and more heat can be blocked by the lower edge portion of the water-cooled jacket 3.

[0066] In some embodiments of the present application, as shown in FIG. 5, the surface of the side of the second connecting portion 32 adjacent to the liquid level is formed into a first curved surface 321 that is concave toward the first connecting portion 31. As can be understood, by setting the bottom surface of the second connecting portion 32 to a curved surface that is concave toward the first connecting portion 31, and since the curved surface has the advantage of having a larger area than a flat surface, more reflected heat can be blocked and absorbed, and the heat dissipation efficiency of the crystal rod 5 can be further improved.

[0067] In some embodiments of the present application, as shown in FIG. 5, the surface of the second connecting portion 32 adjacent to the crystal bar 5 is formed into a second curved surface 322 that is concave in a direction away from the crystal bar 5. As can be understood, setting the surface of the second connecting portion 32 adjacent to the crystal bar 5 to a curved surface that is concave in a direction away from the crystal bar 5 has the advantage that the curved surface has a larger area than a plane, so that more heat radiated from the crystal bar 5 to the second curved surface 322 can be obtained, more heat absorbed by using the water-cooled jacket 3 can be obtained, and the heat dissipation efficiency of the crystal bar 5 can be further improved. Specifically, in another exemplary embodiment of the present application, the surface of the second connecting portion 32 on the side away from the crystal bar 5 is formed into a third curved surface 323 that is concave toward the crystal bar 5. Of course, the present application is not limited thereto, and the surface of the second connecting portion 32 on the side away from the crystal bar 5 may be a plane.

[0068] Hereinafter, a method for processing the flow guide cylinder 1 according to an embodiment of the present application will be described with reference to the drawings.

[0069] According to the method for processing the flow guide cylinder 1 according to the embodiment of the present application, the flow guide cylinder 1 is the flow guide cylinder 1 for the single crystal furnace 100. Here, the line segment group 14 includes a plurality of line segments from line segment 141 to line segment N that are sequentially connected and have different inclination angles. Defining the outer edge in the radial direction of the water-cooled jacket 3 as D and the inner edge in the radial direction of the water-cooled jacket 3 as E, the method for processing the flow guide cylinder 1 includes a step of processing the first line segment 11 and a step of processing the second line segment 13, where the starting point of the second line segment 13 is the upper end point of the first line segment 11, the end point of the second line segment 13 is point A1, and point A1 is flush with point D of the water-cooled jacket 3 in the radial direction of the crystal bar 5. A step of processing line segment 141, where the starting point of line segment 141 is A1, the end point of line segment 141 is B1, the orthographic projection of point A1 on the crystal bar 5 is point C1, creating a first reference line that is perpendicular to the angle bisector of ∠EA1C1 and obliquely upward with point A1 as the starting point, translating EA1 to the position of point D to form an intersection point B1 with the first reference line, and taking A1B1 as line segment 141. A step of processing the second straight line segment 142, wherein the starting point of the second straight line segment 142 is A2 which coincides with the B1 point of the first straight line segment 141, the ending point of the second straight line segment 142 is B2, the orthogonal projection of the A2 point onto the crystal bar 5 is the C2 point, taking the A2 point as the starting point, creating a second reference line that is perpendicular to the angle bisector of ∠EA2C2 and obliquely upward, translating EA2 to the position of point D to form the intersection point B2 with the second reference line, and taking A2B2 as the second straight line segment 142, including the step of, A step of processing the third straight line segment 143, wherein the starting point of the third straight line segment 143 is A3 which coincides with the B2 point of the second straight line segment 142, the ending point of the third straight line segment 143 is B3, the orthogonal projection of the A3 point onto the crystal bar 5 is the C3 point, taking the A3 point as the starting point, creating a third reference line that is perpendicular to the angle bisector of ∠EA3C3 and obliquely upward, translating EA3 to the position of point D to form the intersection point B3 with the third reference line, and taking A3B3 as the third straight line segment, including the step of, Thus, finally, a step of processing the Nth straight line segment, wherein the starting point of the Nth straight line segment is An, the ending point of the Nth straight line segment is Bn, the orthogonal projection of the An point onto the crystal bar is the Cn point, taking the An point as the starting point, creating an Nth reference line that is perpendicular to the angle bisector of ∠EAnCn and obliquely upward, translating EAn to the position of point D to form the intersection point Bn with the Nth reference line, and taking AnBn as the Nth straight line segment, including the step of, including. Here, N satisfies N > 3.

[0070] For example, in one specific embodiment of the present application, the processing method of the draft tube 1 includes the following steps.

[0071] The first step: processing the first straight line segment 11, the first straight line segment 11 extends in the vertical direction, and one end of the first straight line segment 11 adjacent to the liquid level of the crucible 4 is spaced from the liquid level.

[0072] The second step: processing the second straight line segment 13, the starting point of the second straight line segment 13 is the upper endpoint of the first straight line segment 11, the ending point of the second straight line segment 13 is the A1 point, and the A1 point is flush with the D point of the water-cooled jacket 3 in the radial direction of the crystal bar 5. Here, the second straight line segment 13 extends obliquely outward along the direction of the inclination angle of 45°.

[0073] Step 3: Process line segment -141. The starting point of line segment -141 is A1, the ending point is B1, and the orthogonal projection of point A1 on the crystal bar 5 is point C1. Specifically, first find the angle bisector of ∠EA1C1. Starting from point A1, create a wall surface that is perpendicular to the angle bisector of ∠EA1C1 and slopes upward. Also, translate EA1 to the position of point D to form the intersection point B1 with the above wall surface, and set A1B1 as line segment -141.

[0074] Step 4: Process line segment two -142. The starting point of line segment two -142 is A2 which coincides with point B1 in line segment -141, the ending point is B2, and the orthogonal projection of point A2 on the crystal bar 5 is point C2. Specifically, first find the angle bisector of ∠EA2C2. Starting from point A2, create a wall surface that is perpendicular to the angle bisector of ∠EA2C2 and slopes upward. Also, translate EA2 to the position of point D to form the intersection point B2 with the above wall surface, and set A2B2 as line segment two -142.

[0075] Step 5: Process line segment three -143. The starting point of line segment three -143 is A3 which coincides with point B2 in line segment two -142, the ending point is B3, and the orthogonal projection of point A3 on the crystal bar 5 is point C3. Specifically, first find the angle bisector of ∠EA3C3. Starting from point A3, create a wall surface that is perpendicular to the angle bisector of ∠EA3C3 and slopes upward. Also, translate EA3 to the position of point D to form the intersection point B3 with the above wall surface, and set A3B3 as line segment three -143.

[0076] Step 6: Process line segment four -144. The starting point of line segment four -144 is A4 which coincides with point B3 in line segment three -143, the ending point is B4, and the orthogonal projection of point A4 on the crystal bar 5 is point C4. Specifically, first find the angle bisector of ∠EA4C4. Starting from point A4, create a wall surface that is perpendicular to the angle bisector of ∠EA4C4 and slopes upward. Also, translate EA4 to the position of point D to form the intersection point B4 with the above wall surface, and set A4B4 as line segment four -144.

[0077] Step 7: Process line segment five 145. The starting point of line segment five 145 is A5 which coincides with point B4 on line segment four 144, the ending point of line segment five 145 is B5, and the orthogonal projection of point A5 on the crystal bar 5 is point C5. Specifically, first find the angle bisector of ∠EA5C5, take point A5 as the starting point, create a wall surface perpendicular to the angle bisector of ∠EA5C5 and slanting upward, and also translate EA5 to the position of point D to form the intersection point B5 with the above wall surface, and set A5B5 as line segment five 145.

[0078] Step 8: Process line segment six. The starting point of line segment six is A6 which coincides with point B5 on line segment five 145, the ending point of line segment six is B6, and the orthogonal projection of point A6 on the crystal bar 5 is point C6. Specifically, first find the angle bisector of ∠EA6C6, take point A6 as the starting point, create a wall surface perpendicular to the angle bisector of ∠EA6C6 and slanting upward, and also translate EA6 to the position of point D to form the intersection point B6 with the above wall surface, and set A6B6 as line segment six.

[0079] Thus, assuming that the line segment group 14 includes 24 line segments, the processing steps of line segment twenty - four are as follows.

[0080] The starting point of line segment twenty - four is A24 which coincides with point B23 on line segment twenty - three, the ending point of line segment twenty - four is B24, and the orthogonal projection of point A24 on the crystal bar 5 is point C24. Specifically, first find the angle bisector of ∠EA24C24, take point A24 as the starting point, create a wall surface perpendicular to the angle bisector of ∠EA24C24 and slanting upward, and also translate EA24 to the position of point D to form the intersection point B24 with the above wall surface, and set A24B24 as line segment twenty - four.

[0081] According to the processing method of the deflector 1 according to the embodiment of the present application, by setting the second line segment 13, when the heat on the crystal bar 5 enters the second line segment 13 along the radial direction of the crystal bar 5, since the angle formed by the second line segment 13 and the vertical direction is 45° or more, the incident angle of the heat at this part to the second line segment 13 is also 45° or more. According to the principle that the reflection angle is equal to the incident angle, at the second line segment 13 The reflection direction of the reflected heat and the incident direction of the heatThe angle formed therewith is 90° or more. Therefore, the heat in this portion can be transmitted in a direction parallel to the outer wall surface of the crystal rod 5 or in a direction away from the outer wall surface of the crystal rod 5 after being reflected, and it is possible to avoid the heat in this portion being reflected and returning to the crystal rod 5. By setting the line segment group 14, the heat transmitted from the crystal rod 5 to the line segment group 14 can be transmitted to the water-cooled jacket 3 after being reflected by the line segment group 14, and the water-cooled jacket 3 is used to prevent the heat from being transmitted back to the crystal rod 5 conversely. Therefore, the cooling of the crystal rod 5 can be accelerated, which is advantageous for reducing the thermal stress in the crystal rod 5, avoiding the occurrence of holes and dislocation defects inside the crystal rod 5, and improving the production quality of the crystal rod 5.

[0082] In this specification, unless otherwise explicitly specified and limited, terms such as "implementation", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integration, may be a direct connection, may be indirectly connected through an intermediate medium, may be the internal communication of two elements, or may be the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to the situation.

[0083] In the description of this specification, the description referring to terms such as "one embodiment", "several embodiments", "illustration", "specific illustration", or "several illustrations" means that the specific features, structures, materials, or features described in combination with the embodiment or illustration are included in at least one embodiment or illustration of this application. In this specification, the schematic expressions of the above terms do not necessarily have to be directed to the same embodiment or illustration. Furthermore, the specific features, structures, materials, or features described can be combined in a suitable manner in any one or more embodiments or illustrations. It should be noted that those skilled in the art can combine and combine different embodiments or illustrations described in this specification, as well as the features of different embodiments or illustrations, without contradiction.

[0084] Although the embodiments of the present application have been illustrated and described, those skilled in the art can make various changes, modifications, substitutions, and variations to these embodiments without departing from the principle and spirit of the present application, and it can be understood that the scope of the present application is limited by the claims and their equivalents.

Claims

1. A single crystal furnace, comprising a deflector, a furnace body, a water-cooled jacket, and a crucible, wherein the deflector, the water-cooled jacket, and the crucible are all provided in the furnace body, the crucible has a storage space, a crystal rod is formed in the storage space, the deflector and the water-cooled jacket are both provided around the crystal rod, and the water-cooled jacket is located above the deflector. Defining the plane where the axial cross-section of the crystal rod is located as a reference plane, the deflector is cut by the reference plane to form a cut surface, The inner contour line located on the crystal rod side of the cut surface is, A first straight line segment extending in the vertical direction, one end adjacent to the liquid level of the crucible being a first straight line segment spaced from the liquid level, A second straight line segment having one end connected to the end of the first straight line segment away from the crucible and the other end extending upward in a direction away from the crystal rod and inclined at an angle α with the vertical direction, and satisfying α≧45°, Including a plurality of straight line segments connected in sequence and having different inclination angles, and a line segment group having one end connected to the other end of the second straight line segment and the other end extending upward in a direction away from the crystal rod, configured to transfer the heat transmitted from the crystal rod to the line segment group toward the water-cooled jacket and prevent the heat from being transmitted back to the crystal rod by using the water-cooled jacket, The water-cooled jacket is, A first connecting portion provided around the crystal rod and extending in the axial direction of the crystal rod, A single crystal furnace including a second connecting portion connected to one end of the first connecting portion adjacent to the liquid level and extending in the radial direction of the crystal rod.

2. In the radial direction of the crystal rod, the end of the second straight line segment away from the crystal rod is flush with the outer edge of the water-cooled jacket or located outside the outer edge of the water-cooled jacket. The single crystal furnace according to claim 1.

3. The single crystal furnace according to claim 1, wherein α satisfies 50°≧α≧45°.

4. Defining both ends of the straight line segment of the line segment group as end A and end B respectively, defining the orthographic projection of end A on the crystal rod as C, defining the outer edge in the radial direction of the water-cooled jacket as D, and defining the inner edge in the radial direction of the water-cooled jacket as E, the line segment AB is perpendicular to the angle bisector of ∠EAC, and the line segment AE is set parallel to the line segment BD, and end A is the end adjacent to the crystal rod of the straight line segment. The single crystal furnace according to claim 2.

5. The number of straight line segments in the line segment group included in the line segment group is X, and the single crystal furnace according to claim 2, satisfying 30 ≥ X ≥ 10.

6. In the axial direction of the crystal rod, the distance between one end adjacent to the liquid surface of the first straight line segment and the liquid surface is L, and the single crystal furnace according to any one of claims 1 to 5, satisfying 50 mm ≥ L ≥ 20 mm.

7. From the inside to the outside in the radial direction of the furnace body, the distance between the bottom surface of the deflector and the liquid surface gradually decreases, the angle formed by the bottom surface of the deflector and the liquid surface is β, and the single crystal furnace according to any one of claims 1 to 6, satisfying 8° ≥ β ≥ 1°.

8. The liquid surface forms a first arc surface with the inner peripheral wall of the crucible, and the connection portion between the bottom wall of the deflector and the outer peripheral wall of the deflector forms a second arc surface set parallel to the first arc surface, the single crystal furnace according to any one of claims 1 to 7.

9. The liquid surface forms a third arc surface with the outer peripheral wall of the crystal rod, and the connection portion between the bottom wall of the deflector and the inner peripheral wall of the deflector forms a fourth arc surface set parallel to the third arc surface, the single crystal furnace according to any one of claims 1 to 7.

10. The surface on the side adjacent to the liquid surface of the second connecting portion is formed into a first curved surface concave toward the first connecting portion, or the surface on the side adjacent to the crystal rod of the second connecting portion is formed into a second curved surface concave in a direction away from the crystal rod, the single crystal furnace according to claim 1.

11. A processing method of a deflector which is the single crystal furnace according to any one of claims 1 to 9, The line segment group includes a plurality of straight line segments from straight line segment 1 to straight line segment N that are sequentially connected and have different inclination angles. Defining the outer edge in the radial direction of the water-cooled jacket as D and the inner edge in the radial direction of the water-cooled jacket as E, The step of processing the first straight line segment, The step of processing the second straight line segment, wherein the starting point of the second straight line segment is the upper end point of the first straight line segment, the end point of the second straight line segment is point A1, and the step of making point A1 flush with point D of the water-cooled jacket in the radial direction of the crystal rod, The step of processing straight line segment 1, wherein the starting point of straight line segment 1 is A1, the end point of straight line segment 1 is B1, and the orthogonal projection of point A1 onto the crystal rod is point C1, Taking point A1 as the starting point, creating a first reference line perpendicular to the angle bisector of ∠EA1C1 and obliquely upward, Translate EA1 to the position of point D to form an intersection point B1 with the first reference line, and use A1B1 as the first line segment, including the steps of: The step of processing the second line segment, wherein the starting point of the second line segment is A2 that coincides with the B1 point of the first line segment, the ending point of the second line segment is B2, and the orthogonal projection of the A2 point onto the crystal bar is point C2; Taking the A2 point as the starting point, creating a second reference line that is perpendicular to the angle bisector of ∠EA2C2 and obliquely upward; Translate EA2 to the position of point D to form an intersection point B2 with the second reference line, and use A2B2 as the second line segment, including the steps of: The step of processing the third line segment, wherein the starting point of the third line segment is A3 that coincides with the B2 point of the second line segment, the ending point of the third line segment is B3, and the orthogonal projection of the A3 point onto the crystal bar is point C3; Taking the A3 point as the starting point, creating a third reference line that is perpendicular to the angle bisector of ∠EA3C3 and obliquely upward; Translate EA3 to the position of point D to form an intersection point B3 with the third reference line, and use A3B3 as the third line segment, including the steps of: In this way, Finally, the step of processing the Nth line segment, wherein the starting point of the Nth line segment is An, the ending point of the Nth line segment is Bn, and the orthogonal projection of the An point onto the crystal bar is point Cn; Taking the An point as the starting point, creating an Nth reference line that is perpendicular to the angle bisector of ∠EAnCn and obliquely upward; Translate EAn to the position of point D to form an intersection point Bn with the Nth reference line, and use AnBn as the Nth line segment, where N satisfies N > 3, including the steps of: A method for processing a draft tube.

Images