Substrate processing apparatus and substrate processing method

Abstract

To form a treatment film with uniform thickness on a substrate.SOLUTION: A substrate treatment device forms a treatment film on a surface of a substrate. The substrate treatment device includes a spin chuck 21 as a substrate holder that holds a substrate coated with an undried treatment liquid for forming the treatment film, and a gas feeder 40 that feeds the outer edge of the surface of the substrate held by the substrate holder with a first gas F1 at a first temperature higher than the room temperature.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 describes removing a convex portion by supplying a solvent of a coating liquid to the convex portion of a coating film formed on the peripheral edge portion of the surface of a substrate.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique for forming a processing film with a uniform film thickness on a substrate.

Means for Solving the Problems

[0005] A substrate processing apparatus according to an aspect of the present disclosure is a substrate processing apparatus that forms a processing film on the surface of a substrate, and includes a substrate holding unit that holds a substrate coated with a processing liquid before drying for forming the processing film, and a gas supply unit that includes a first nozzle unit that supplies a first gas at a first temperature higher than room temperature to the peripheral edge portion of the surface of the substrate held by the substrate holding unit.

Effects of the Invention

[0006] According to the present disclosure, a technique for forming a processing film with a uniform film thickness on a substrate is provided.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

[0008] Hereinafter, various exemplary embodiments will be described.

[0009] In one exemplary embodiment, a substrate processing apparatus is a substrate processing apparatus that forms a processing film on the surface of a substrate, and includes a substrate holding unit that holds a substrate coated with a processing liquid before drying for forming the processing film, and a gas supply unit that includes a first nozzle unit that supplies a first gas at a first temperature higher than room temperature to the peripheral edge of the surface of the substrate held by the substrate holding unit.

[0010] According to the above-described substrate processing apparatus, a first gas at a first temperature higher than room temperature is supplied to the peripheral portion of the surface of the substrate held by the substrate holding portion. By supplying the first gas, the processing liquid at the peripheral portion of the substrate dries while being in contact with the first gas, so that the formation of humps at the peripheral portion is suppressed. Therefore, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0011] The gas supply unit may be configured to intermittently supply the first gas to each position of the peripheral portion of the substrate.

[0012] By adopting a configuration in which the first gas is intermittently supplied, the formation of humps at the peripheral portion is further suppressed, and it becomes possible to form a processing film with a more uniform film thickness on the substrate.

[0013] The first nozzle unit may be configured to supply the first gas to the peripheral portion of the substrate from above the peripheral portion of the substrate.

[0014] By supplying the first gas to the peripheral portion from above the peripheral portion by the first nozzle unit, the formation of humps at the peripheral portion is further suppressed, and it becomes possible to form a processing film with a more uniform film thickness on the substrate.

[0015] The gas supply unit may be configured to alternately supply the first gas and a second gas at a second temperature lower than the first temperature to each position of the peripheral portion of the substrate.

[0016] By alternately supplying the first gas and the second gas at a second temperature lower than the first temperature to each position of the peripheral portion, the drying rate of the processing liquid at the peripheral portion is adjusted, and the formation of humps at the peripheral portion is suppressed. Therefore, it becomes possible to form a processing film with a more uniform film thickness on the substrate.

[0017] The gas supply unit may be configured to be able to simultaneously supply the first gas and the second gas to different positions on the surface of the substrate.

[0018] The gas supply unit can simultaneously supply the first gas and the second gas to different positions on the surface of the substrate, enabling the rapid supply of the first gas and the second gas to each position of the substrate.

[0019] The gas supply unit may further include a second nozzle unit that supplies the second gas and is provided above the peripheral edge of the substrate.

[0020] By having a separate second nozzle unit, the supply of the first gas and the second gas can be carried out independently.

[0021] The gas supply unit may include a plurality of first nozzle units and a plurality of second nozzle units, and above the peripheral edge of the substrate, the first nozzle units and the second nozzle units may be alternately arranged along the peripheral edge.

[0022] When the first nozzle units and the second nozzle units are alternately arranged along the peripheral edge above the peripheral edge of the substrate, a configuration for alternately supplying the first gas and the second gas can be easily realized. For example, by relatively moving the substrate along the extending direction of the peripheral edge, a configuration for alternately supplying the first gas and the second gas to each position of the peripheral edge can be realized.

[0023] The gas supply unit may include a first pipe that supplies the first gas to the first nozzle unit, a first temperature adjustment unit that adjusts the temperature of the gas flowing through the first pipe to the first temperature, a second pipe that supplies the second gas to the second nozzle unit, and a second temperature adjustment unit that adjusts the temperature of the gas flowing through the second pipe to the second temperature.

[0024] With the above configuration, the temperature adjustment of the first gas and the second gas can be carried out independently.

[0025] The first nozzle unit may alternately supply the first gas and the second gas to the surface of the substrate.

[0026] With the above configuration, the first gas and the second gas can be alternately supplied from one nozzle portion, and the first gas and the second gas can be supplied to each position of the substrate by one nozzle.

[0027] It has a pipe for supplying the gas to the first nozzle portion and a temperature adjustment portion for adjusting the temperature of the gas supplied from the first nozzle portion to the substrate. The temperature adjustment portion may be configured to adjust the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the first temperature and the second temperature.

[0028] With the above configuration, the first gas and the second gas can be prepared and supplied by temperature adjustment with one temperature adjustment portion.

[0029] The temperature adjustment portion may be configured to switch the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching the on state and the off state of the power supply of the heater that heats the gas flowing through the pipe.

[0030] Further, the temperature adjustment portion may be configured to switch the temperature of the gas flowing through the pipe between the first temperature and the second temperature by changing the setting of the heater that heats the gas flowing through the pipe.

[0031] It has a first pipe for supplying the first gas to the first nozzle portion, a second pipe for supplying the second gas to the first nozzle portion, and a temperature adjustment portion for adjusting the temperature of the gas supplied from the first nozzle portion to the substrate. The temperature adjustment portion may be configured to adjust the temperature of the gas supplied to the substrate by switching the pipe for supplying the gas to the first nozzle portion between the first pipe and the second pipe.

[0032] With the above configuration, by simply switching the pipe for supplying the gas to the first nozzle portion, the switching between the first gas and the second gas can be quickly performed.

[0033] The substrate holding unit may be a rotating mechanism that adsorbs the substrate and rotates it horizontally.

[0034] Further, a cup disposed around the substrate holding unit so as to surround the periphery of the substrate indicated by the substrate holding unit may be further provided, and the gas supply unit may supply the first gas from a supply port attached to the cup to the peripheral edge of the surface of the substrate.

[0035] Furthermore, the substrate holding unit may be a transport mechanism that transports the substrate in the horizontal direction.

[0036] In one exemplary embodiment, a substrate processing method is a substrate processing method for forming a processing film on the surface of a substrate, and includes supplying a first gas at a first temperature higher than room temperature to the peripheral edge of the surface of the substrate coated with a processing liquid before drying for forming the processing film.

[0037] According to the above substrate processing method, a first gas at a first temperature higher than room temperature is supplied to the peripheral edge of the surface of the substrate. By supplying the first gas, the processing liquid dries in a state where the processing liquid at the peripheral edge of the substrate is in contact with the first gas, so that the formation of humps at the peripheral edge is suppressed. Therefore, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0038] Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In each drawing, the same or corresponding parts will be denoted by the same reference numerals.

[0039] [Substrate Processing System]

[0040] The substrate processing system 1 shown in FIG. 1 is a system for forming a photosensitive film, exposing the photosensitive film, and developing the photosensitive film on a workpiece W. The workpiece W to be processed is, for example, a substrate, or a substrate in a state where a film, a circuit, etc. are formed by performing predetermined processing. The substrate included in the workpiece W is, as an example, a wafer containing silicon. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), etc., or an intermediate obtained by performing predetermined processing on these substrates, etc. The photosensitive film is, for example, a resist film.

[0041] The substrate processing system 1 includes a coating / developing apparatus 2, an exposure apparatus 3, and a control apparatus 100 (control unit). The exposure apparatus 3 is an apparatus for exposing the resist film (photosensitive film) formed on the workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates an energy ray to the exposed portion of the resist film by a method such as immersion exposure. The coating / developing apparatus 2 performs a process of applying a resist (processing liquid) to the surface of the workpiece W to form a resist film before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film after the exposure process.

[0042] (Substrate processing apparatus) Hereinafter, as an example of the substrate processing apparatus, the configuration of the coating / developing apparatus 2 will be described. As shown in FIGS. 1 and 2, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6.

[0043] The carrier block 4 introduces the workpiece W into the coating / developing apparatus 2 and exports the workpiece W from the coating / developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the workpiece W and incorporates a transfer device A1 including a transfer arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transfer device A1 takes out the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it into the carrier C. The processing block 5 has a plurality of processing modules 11, 12, 13, 14.

[0044] The processing module 11 incorporates an application unit U1, a heat treatment unit U2, and a transfer device A3 for transferring the workpiece W to these units. The processing module 11 forms a lower layer film on the surface of the workpiece W by the application unit U1 and the heat treatment unit U2. The application unit U1 applies a processing liquid for forming the lower layer film onto the workpiece W. The heat treatment unit U2 performs various heat treatments associated with the formation of the lower layer film.

[0045] The processing module 12 incorporates an application unit U1, a heat treatment unit U2, and a transfer device A3 for transferring the workpiece W to these units. The processing module 12 performs liquid processing including forming a resist film on the lower layer film by the application unit U1 and the heat treatment unit U2. The application unit U1 applies a processing liquid (resist) for forming the resist film onto the lower layer film. The heat treatment unit U2 performs various heat treatments associated with the formation of the film. Note that the application unit U1 has a function of forming a protective film (processing film) made of resist liquid at the periphery of the workpiece W.

[0046] The processing module 13 incorporates an application unit U1, a heat treatment unit U2, and a transfer device A3 for transferring the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film by the application unit U1 and the heat treatment unit U2. The application unit U1 applies a liquid for forming the upper layer film onto the resist film. The heat treatment unit U2 performs various heat treatments associated with the formation of the upper layer film.

[0047] The processing module 14 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 for transferring the workpiece W to these units. The processing module 14 performs development processing of the resist film subjected to exposure processing and heat treatment associated with the development processing by the coating unit U1 and the heat treatment unit U2. The coating unit U1 performs development processing of the resist film by applying a developer onto the surface of the exposed workpiece W and then flushing it with a rinse liquid. The heat treatment unit U2 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include pre-development heat treatment (PEB: Post Exposure Bake), post-development heat treatment (PB: Post Bake), etc.

[0048] A shelf unit U10 is provided on the side of the carrier block 4 within the processing block 5. The shelf unit U10 is partitioned into a plurality of cells arranged in the vertical direction. A transfer device A7 including a lifting arm is provided in the vicinity of the shelf unit U10. The transfer device A7 raises and lowers the workpiece W between the cells of the shelf unit U10.

[0049] A shelf unit U11 is provided on the side of the interface block 6 within the processing block 5. The shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.

[0050] The interface block 6 transfers the workpiece W to and from the exposure apparatus 3. For example, the interface block 6 incorporates a transfer device A8 including a transfer arm and is connected to the exposure apparatus 3. The transfer device A8 delivers the workpiece W arranged in the shelf unit U11 to the exposure apparatus 3. The transfer device A8 receives the workpiece W from the exposure apparatus 3 and returns it to the shelf unit U11.

[0051] [Coating Unit] The coating unit U1 of the processing module 12 will be described in detail. As shown in FIG. 3, the coating unit U1 of the processing module 12 includes a spin chuck 21 (substrate holding unit), a rotation driving unit 22, support pins 23, a guide ring 25, a cup 26, an exhaust pipe 28, and a drain port 29. Further, the coating unit U1 includes a processing liquid supply unit 31. The processing liquid supply unit 31 has a function of supplying a processing liquid for forming a resist film to the surface of the workpiece W. Furthermore, the coating unit U1 further has a gas supply unit 40.

[0052] The spin chuck 21 holds the workpiece W horizontally. The spin chuck 21 is connected to the rotation driving unit 22 via a shaft extending in the vertical direction (up and down direction). The rotation driving unit 22 rotates the spin chuck 21 at a predetermined rotation speed based on a control signal output from the control device 100.

[0053] The support pins 23 are pins capable of supporting the back surface of the workpiece W, and three of them are provided around the shaft of the spin chuck 21 as an example. The support pins 23 can be moved up and down by a lifting mechanism (not shown). The workpiece W is transferred between the transfer mechanism (not shown) of the workpiece W and the spin chuck 21 by the support pins 23.

[0054] The guide ring 25 is provided below the workpiece W held by the spin chuck 21 and has a function of guiding the processing liquid supplied to the surface of the workpiece W toward the drain port. Further, a cup 26 for suppressing the scattering of the processing liquid is provided so as to surround the periphery of the outer periphery of the guide ring 25. The upper part of the cup 26 is open so that the workpiece W can be transferred to the spin chuck 21. Also, the upper end 26a of the cup 26 is located above the workpiece W. A space 27 serving as a liquid discharge path is formed between the side peripheral surface of the cup 26 and the outer peripheral edge of the guide ring 25. Further, below the cup 26, an exhaust pipe 28 having an exhaust port 28a and a drain port 29 for discharging the liquid moving in the space 27 are provided.

[0055] The processing liquid supply unit 31 discharges the processing liquid toward the surface of the workpiece W from above the workpiece W supported by the spin chuck 21.

[0056] The processing liquid supply unit 31 includes a nozzle 31a, a processing liquid supply source 31b, and a pipe 31c. An on-off valve controlled by the control device 100 may be provided on the pipe 31c of the processing liquid supply unit 31. By switching the open state and the closed state of the on-off valve based on a control signal from the control device 100, the supply / stop of the processing liquid may be switched. Examples of the processing liquid supplied from the processing liquid supply unit 31 include a processing liquid (e.g., a resist liquid) used when forming a protective film at the periphery of the workpiece W.

[0057] The nozzle 31a of the processing liquid supply unit 31 is attached to, for example, an arm extending in the horizontal direction and is movable in the horizontal direction. Further, the nozzle 31a is also movable in the vertical direction. That is, although not shown in FIG. 3, the coating unit U1 is provided with a moving mechanism for moving the nozzle 31a in the horizontal and vertical directions. Then, by the operation of the moving mechanism, the nozzle 31a can move between a standby position outside the cup 26 and above the workpiece W.

[0058] The gas supply unit 40 has a function of supplying gas toward the periphery of the workpiece W. The supply of gas by the gas supply unit 40 is performed for the purpose of controlling the surface shape of the processing liquid (resist liquid) supplied to the surface of the workpiece W. The gas supply unit 40 supplies a first gas F1 and a second gas F2 as two types of gases having different temperatures from each other. Therefore, the gas supply unit 40 includes a first gas supply unit 41 and a second gas supply unit 42. Let the temperature of the first gas F1 be the first temperature and the temperature of the second gas F2 be the second temperature. In the coating unit U1, the drying state of the processing liquid at the periphery of the workpiece W is adjusted by alternately supplying the first gas F1 and the second gas F2 to each position at the periphery of the surface of the workpiece W.

[0059] The first gas supply unit 41 includes a nozzle 41a (first nozzle section), a pipe 41b (first pipe), a temperature adjustment section 41c (first temperature adjustment section), an on-off valve 41d, and a gas supply source 45. The gas supply source 45 also functions as the gas supply source 45 of the second gas supply unit 42. The temperature adjustment section 41c and the on-off valve 41d are provided on the pipe 41b. The temperature adjustment section 41c introduces the gas flowing through the pipe 41b, performs temperature adjustment, and supplies the gas after the temperature adjustment to the downstream pipe 41b. The on-off valve 41d has a function of switching the supply / stop of the gas by switching between the open state and the closed state.

[0060] Regarding the second gas supply unit 42 as well, similar to the first gas supply unit 41, it includes a nozzle 42a (second nozzle section), a pipe 42b (second pipe), a temperature adjustment section 42c (second temperature adjustment section), an on-off valve 42d, and a gas supply source 45. The temperature adjustment section 42c and the on-off valve 42d are provided on the pipe 42b. The temperature adjustment section 42c introduces the gas flowing through the pipe 42b, performs temperature adjustment, and supplies the gas after the temperature adjustment to the downstream pipe 42b. The on-off valve 42d has a function of switching the supply / stop of the gas by switching between the open state and the closed state.

[0061] When supplying the same type of gas as the first gas F1 and the second gas F2, the gas supply source 45 can be shared. As the first gas F1 and the second gas F2, inert gases such as nitrogen (N2) and argon (Ar) can be used. The first gas F1 and the second gas F2 may be different gases from each other. In that case, the gas supply source of the first gas supply unit 41 and the gas supply source of the second gas supply unit 42 are prepared individually.

[0062] The temperature of the first gas F1 and the second gas F2 is different from each other when supplied to the work W. As an example, the temperature of the first gas F1 may be 50°C to 200°C (warm air), and the temperature of the second gas F2 may be 15°C to 30°C (cold air). At least, the temperature of the first gas F1 is set higher than the normal temperature (the ambient temperature in the processing space where the work W is placed is defined as the "normal temperature"). In this embodiment, the description is made on the premise that the temperature of the first gas F1 is higher than that of the second gas F2.

[0063] In FIG. 3, a state where the nozzle 42a of the second gas supply unit 42 is arranged inside the work W with respect to the nozzle 41a of the first gas supply unit 41 is schematically shown. However, the first gas F1 and the second gas F2 are alternately supplied to each position of the peripheral edge W1 (see FIG. 4) of the work W. Therefore, the actual arrangement of the nozzles 41a and 42a is different from the form shown in FIG. 3.

[0064] As an example, the nozzles 41a and 42a may be attached to, for example, an arm extending in the horizontal direction and may be movable in the horizontal direction and the vertical direction. For example, for the nozzles 41a and 42a, a moving mechanism for moving them in the horizontal direction and the vertical direction may be provided respectively. Further, by the operation of the moving mechanism, the nozzles 41a and 42a may be movable between a standby position outside the cup 26 and above the work W.

[0065] Instead of providing the nozzles 41a and 42a individually, a gas supply nozzle 50 in which the nozzles 41a and 42a are integrated may be used. FIG. 4 shows an example of the gas supply nozzle 50. Further, FIG. 5 schematically shows a configuration example in the vicinity of the discharge port of the gas supply nozzle 50.

[0066] The gas supply nozzle 50 includes an annular main body portion 51 and four nozzle portions 52a, 52b, 52c, and 52d. The nozzle portions 52a and 52c function as the nozzle 41a for supplying the first gas F1, and the nozzle portions 52b and 52d function as the nozzle 42a for supplying the second gas F2.

[0067] The main body portion 51 has an annular structure with a diameter corresponding to the outer peripheral shape of the workpiece W, and is sized to overlap with the peripheral portion W1 of the workpiece W in a plan view. Inside the main body portion 51, a flow path connected to the pipe 41b related to the first gas F1 and a flow path connected to the pipe 42b related to the second gas F2 are provided. In FIG. 3, a state where the pipes 41b and 42b are connected to the upper portion of the main body portion 51 is schematically shown, but the connection positions of the gas supply nozzle 50 and the pipes 41b and 42b are not particularly limited, and the shape of the internal flow path can be changed according to the connection positions.

[0068] When supplying the first gas F1 and the second gas F2 to the workpiece W, the main body portion 51 is arranged so as to overlap the workpiece W in a plan view above the workpiece W as shown in FIG. 4. Note that, in FIG. 4, a state where the gas supply nozzle 50 and the workpiece W are separated in the vertical direction is shown, but when supplying the first gas F1 and the second gas F2, the gas supply nozzle 50 is closer to the workpiece W than the state shown in FIG. 4.

[0069] The nozzle portions 52a, 52b, 52c, and 52d are attached below the main body portion 51 and are arranged on the circumference, for example, at equal intervals along the circumferential direction such that the nozzle portions 52a, 52b, 52c, and 52d are arranged in this order. In the example shown in FIG. 4, the nozzle portions 52a and 52c are arranged to face each other with the center of the main body portion 51 (corresponding to the center of the workpiece W) in between, and the nozzle portions 52b and 52d are arranged to face each other with the center of the main body portion 51 (corresponding to the center of the workpiece W) in between. The nozzle portions 52a, 52b, 52c, and 52d all exhibit an arc shape along the annular main body portion 51. Note that the lengths of the nozzle portions 52a, 52b, 52c, and 52d along the arc shape are not particularly limited and can be appropriately changed within a range where the nozzle portions 52a, 52b, 52c, and 52d do not overlap each other.

[0070] The nozzle portions 52a, 52b, 52c, and 52d each have a shape that opens downward in order to supply the first gas F1 or the second gas F2 to the workpiece W.

[0071] Figs. 5(a) and 5(b) show examples of the opening 52x formed on the lower surface of the nozzle portion 52a. Fig. 5(a) shows an example where the opening 52x is in a slit shape extending along the longitudinal direction of the arc-shaped nozzle portion 52a. Further, Fig. 5(b) shows an example where the opening 52x is in a shape combining a plurality of small holes 52y arranged along the longitudinal direction of the arc-shaped nozzle portion 52a. The shape of the opening 52x of the nozzle portion 52a may be the slit shape shown in Fig. 5(a), or may be the shape in which a plurality of small holes shown in Fig. 5(b) are arranged, or may be a shape combining these. Note that in Fig. 5, the nozzle portion 52a is illustrated, but the nozzle portions 52b to 52d also have the same opening 52x as the nozzle portion 52a shown in Fig. 4.

[0072] In the gas supply nozzle 50, nozzle portions 52a to 52d having an opening 52x as shown in Fig. 4 are annularly arranged below the main body portion 51 as shown in Fig. 4. The gas supply systems of the first gas F1 and the second gas F2 to this gas supply nozzle 50 are independent of each other as shown in Fig. 4. Therefore, in the gas supply nozzle 50, the supply of the first gas F1 from the nozzle portions 52a and 52c and the supply of the second gas F2 from the nozzle portions 52b and 52d can be performed simultaneously.

[0073] When the work W arranged below is rotated with the nozzle portions 52a to 52d each supplying the first gas F1 or the second gas F2, each position (each point) of the peripheral portion W1 of the work W will sequentially pass below the nozzle portions 52a to 52d. The first gas F1 and the second gas F2 supplied from the gas supply nozzle 50 will come into contact alternately. This state will continue while the rotation of the work W continues.

[0074] The control device 100 controls the coating / development device 2. The control device 100 executes liquid processing on the workpiece W by the processing module 12 according to predetermined conditions. The control device 100, for example, supplies a processing liquid to the workpiece W by the processing liquid supply unit 31 based on predetermined conditions, and controls the rotation of the workpiece W and the like at that time. Further, as shown in FIG. 6, the control device 100 controls the temperature adjustment unit 41c and the on-off valve 41d of the first gas supply unit 41 and the temperature adjustment unit 42c and the on-off valve 42d of the second gas supply unit 42. For example, based on the processing conditions, each part of the first gas supply unit 41 and each part of the second gas supply unit 42 are controlled while controlling the rotation of the workpiece W and the like.

[0075] The control device 100 may be composed of a plurality of function modules for executing the above liquid processing. Each function module is not limited to being realized by the execution of a program, and may be realized by a dedicated electric circuit (for example, a logic circuit) or an integrated circuit (ASIC: Application Specific Integrated Circuit) integrating this.

[0076] The hardware of the control device 100 may be composed of, for example, one or more control computers. As shown in FIG. 7, the control device 100 includes a circuit 201 as a configuration on the hardware. The circuit 201 may be composed of electrical circuit elements (circuitry). The circuit 201 may include a processor 202, a memory 203, a storage 204, a driver 205, and an input / output port 206.

[0077] The processor 202 collaborates with at least one of the memory 203 and the storage 204 to execute a program and performs input / output of signals via the input / output port 206, thereby constituting each of the above-described functional modules. The memory 203 and the storage 204 store various types of information, programs, etc. used in the control device 100. The driver 205 is a circuit that drives each of the various devices of the coating / development device 2. The input / output port 206 performs input / output of signals between the driver 205 and each part constituting the coating / development device 2.

[0078] The substrate processing system 1 may include one control device 100, or may include a group of controllers (control units) composed of a plurality of control devices 100. When the substrate processing system 1 includes a group of controllers, for example, each of the plurality of functional modules may be realized by one different control device, or may be realized by a combination of two or more control devices 100. When the control device 100 is composed of a plurality of computers (circuits 201), each of the plurality of functional modules may be realized by one computer (circuit 201). Also, the control device 100 may be realized by a combination of two or more computers (circuits 201). The control device 100 may have a plurality of processors 202. In this case, each of the plurality of functional modules may be realized by one processor 202, or may be realized by a combination of two or more processors 202. A part of the functions of the control device 100 of the substrate processing system 1 may be provided in a device separate from the substrate processing system 1, and connected to the substrate processing system 1 via a network to realize various operations in the present embodiment. For example, if the functions of the processors 202, memories 203, and storages 204 of the plurality of substrate processing systems 1 are collectively realized by one or more separate devices, it is also possible to remotely manage and control the information and operations of the plurality of substrate processing systems 1 in a batch.

[0079] A description will be given of the processing of the workpiece W executed in the above-described substrate processing system 1. The control device 100 controls the coating / development device 2 to execute processing on the workpiece W, for example, according to the following procedure. First, the control device 100 controls the transfer device A1 to transfer the workpiece W in the carrier C to the shelf unit U10, and controls the transfer device A7 to place this workpiece W in the cell for the processing module 11.

[0080] Next, the control device 100 controls the transfer device A3 to transfer the workpiece W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of this workpiece W. Thereafter, the control device 100 controls the transfer device A3 to return the workpiece W on which the lower layer film has been formed to the shelf unit U10, and controls the transfer device A7 to place this workpiece W in the processing module 12.

[0081] Next, the control device 100 controls the transfer device A3 to transfer the workpiece W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 12. The control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower layer film of the workpiece W. An example of the liquid processing method performed in the processing module 12 will be described later. Thereafter, the control device 100 controls the transfer device A3 to return the workpiece W to the shelf unit U10, and controls the transfer device A7 to place this workpiece W in the cell for the processing module 13.

[0082] Next, the control device 100 controls the transfer device A3 to transfer the workpiece W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 13. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of this workpiece W. Thereafter, the control device 100 controls the transfer device A3 to transfer the workpiece W to the shelf unit U11.

[0083] Next, the control device 100 controls the transfer device A8 to send out the workpiece W stored in the shelf unit U11 to the exposure device 3. Then, in the exposure device 3, an exposure process is performed on the resist film formed on the workpiece W. After that, the control device 100 receives the workpiece W that has undergone the exposure process from the exposure device 3 and controls the transfer device A8 to place the workpiece W in the cell for the processing module 14 in the shelf unit U11.

[0084] Next, the control device 100 controls the transfer device A3 to transfer the workpiece W in the shelf unit U11 to the heat treatment unit U2 of the processing module 14. Then, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to perform the heat treatment associated with the development process and the development process. Thus, the control device 100 completes the substrate processing for one workpiece W.

[0085] [Substrate Processing Method] Next, an example of the substrate processing method performed in the processing module 12 will be described. Here, as the substrate processing method, a method of forming a resist film on the peripheral portion W1 of the surface of the workpiece W will be described.

[0086] FIG. 8 is a flowchart showing an example of the processing procedure for forming a resist film on the surface of the workpiece W.

[0087] As shown in FIG. 8, the control device 100 executes step S01. In step S01, the control device 100 controls the support pins 23 of the transfer device A3 and the coating unit U1 to support the workpiece W on the spin chuck 21 in the coating unit U1. Then, the control device 100 starts the rotation of the workpiece W by driving the rotation drive unit 22. As an example, the rotation speed of the workpiece W at this time is set to about 100 rpm to 2000 rpm.

[0088] Next, the control device 100 executes step S02. In step S02, the control device 100 controls the processing liquid supply unit 31 while rotating the workpiece W by driving the rotational drive unit 22, and discharges the processing liquid from the nozzle 31a toward the center of the surface of the workpiece W. The solvent supplied to the center of the surface of the workpiece W spreads in the radial direction of the workpiece W due to the rotation of the workpiece W. As a result, a state in which the processing liquid (resist liquid) is entirely attached to the surface of the workpiece W is formed. The control device 100 stops the discharge of the processing liquid from the processing liquid supply unit 31 at the timing when a predetermined amount of the processing liquid is discharged from the nozzle 31a.

[0089] Thereafter, the control device 100 executes step S03. In step S03, the control device 100 controls the first gas supply unit 41 and the second gas supply unit 42 of the gas supply unit 40, and supplies the first gas F1 (warm air) and the second gas F2 (cold air) to the peripheral portion W1 of the workpiece W. Specifically, the control device 100 causes the supply of the first gas F1 from the first gas supply unit 41 of the gas supply unit 40 and the supply of the second gas F2 from the second gas supply unit 42 to be executed while rotating the workpiece W by driving the rotational drive unit 22. As a result, the first gas F1 is supplied from the nozzle portions 52a and 52c that function as the nozzle 41a among the gas supply nozzles 50, and the second gas F2 is supplied from the nozzle portions 52b and 52d that function as the nozzle 42a. Thereby, each position of the peripheral portion W1 of the workpiece W comes into contact with the first gas F1 and the second gas F2 alternately. Note that the supply amounts of the first gas F1 and the second gas F2 in step S03 may be adjusted so that the wind speeds from the nozzle portions 52a to 52d are, for example, 0.05 m / sec to 1 m / sec. The wind speeds from the nozzle portions 52a to 52d may be different from each other.

[0090] Also, the rotational speed of the workpiece W can be adjusted such that, for example, the first gas F1 (hot air) and the second gas F2 (cold air) are alternately supplied to each position on the peripheral portion W1 of the workpiece W, for example, every 1 second to 10 seconds. As an example, supplying the first gas F1 (hot air) for about 5 seconds and supplying the second gas F2 (cold air) for about 5 seconds may be alternately repeated. Also, the supply times of the first gas F1 (hot air) and the second gas F2 (cold air) may be different from each other.

[0091] The above step S03 volatilizes the volatile components in the processing liquid supplied to the surface of the workpiece W. That is, step S03 can function as a step of drying and solidifying the processing liquid. By undergoing this process, the processing liquid supplied to the surface of the workpiece W dries, and a processing film (resist film) is formed. Step S03 can be executed until at least the surface of the processing liquid solidifies and its shape becomes stable.

[0092] Next, the control device 100 executes step S04. In step S04, the control device 100 waits in a state where the rotation of the workpiece W and the supply of gas from the gas supply unit 40 are executed until a preset predetermined time elapses. Until the predetermined time elapses (during S04-NO), the above state is continued. After the predetermined time has elapsed (S04-YES), the control device 100 terminates the rotation of the workpiece W and the supply of gas from the gas supply unit 40.

[0093] Note that step S03 (supply of the first gas F1 (hot air) and the second gas F2 (cold air)) may be performed after the process of step S02 (discharge of the processing liquid) as described above, or may be performed partially simultaneously with step S02 (discharge of the processing liquid).

[0094] Among the above series of processes, particularly by alternately supplying the first gas F1 (warm air) and the second gas F2 (cool air) to the peripheral portion W1 of the work W, the shape of the processing film (for example, a resist film) at the peripheral portion W1 on the surface of the work W changes. FIG. 9 is a diagram for explaining the change in the processing liquid R supplied to the peripheral portion W1 of the work W, and is an enlarged view of the vicinity of the peripheral portion of the work W. FIG. 9(a) shows an example in which, instead of supplying the first gas F1 (warm air) and the second gas F2 (cool air), the back surface of the work W is heated by a heater to volatilize the solvent component of the processing liquid R and dry the processing liquid R. The processing liquid R (resist liquid) for forming the resist film is supplied, for example, to the center of the rotating work W as described above, and is spread to the peripheral portion W1 of the work W using centrifugal force. At this time, a hump R1 made of the resist liquid may be formed at the peripheral portion W1 of the work W. The hump R1 is an extremely raised region (protrusion) with respect to other regions, and can be formed in a ring shape at the outer peripheral end of the processing liquid R spread on the work W. The hump R1 is considered to be formed by Marangoni convection in the processing liquid applied to the surface of the work W.

[0095] Marangoni convection is a flow that occurs within the processing liquid R (inside the liquid that becomes a resist film) staying on the surface of the workpiece W, and the processing liquid moves laterally (horizontally) toward the portion that forms the contour of the processing liquid R when the processing liquid evaporates. Fig. 9(a) schematically shows an example of the state in which a hump R1 is formed by Marangoni convection occurring near the peripheral portion W1 of the workpiece W. Further, when the workpiece W is heated by the heater H provided on the back surface of the workpiece W, a temperature difference occurs between the portion of the processing liquid R close to the surface of the workpiece W and the portion separated from the workpiece W, so that Marangoni convection is likely to occur. When Marangoni convection occurs in the processing liquid R on the workpiece W, the solid components constituting the processing liquid (for example, resin particles in the case of a resist liquid) move toward the portion that forms the contour of the processing liquid R along this convection. The portion that forms the contour of the processing liquid R corresponds to the peripheral portion W1 of the workpiece W. When the solid components in the processing liquid R concentrate and precipitate at the peripheral portion W1 of the workpiece W, a hump R1 having a greater thickness than other regions may be formed as shown in Fig. 9(a). When the processing liquid R dries in this state, a processing film (for example, a resist film) made of the processing liquid is formed with the hump R1 remaining. This phenomenon is also called the coffee stain phenomenon and can occur when a liquid is dried and solidified.

[0096] In contrast, in the method described in this embodiment, Marangoni convection is suppressed by changing the drying method of the processing liquid R (the method of volatilizing the solvent in the processing liquid). FIG. 9(b) schematically shows a method of alternately bringing the first gas F1 (warm air) and the second gas F2 (cool air) into contact with the processing liquid R on the work W as described in this embodiment. In this case, the generation of Marangoni convection in the processing liquid staying on the surface of the work W can be suppressed. Even if Marangoni convection occurs, at the peripheral portion W1 of the work W, the first gas F1 (warm air) and the second gas F2 (cool air) are blown from above toward the surface of the work W. Therefore, the concentration and precipitation of the solid components in the processing liquid R at the peripheral portion W1 of the work W are prevented. As a result, as shown in FIG. 9(b), the formation of the hump R1 at the peripheral portion W1 of the work W is suppressed. That is, by supplying the first gas F1 (warm air) and the second gas F2 (cool air), the shape can be adjusted so that the surface shape of the processing film formed by the processing liquid R becomes smooth.

[0097] In addition, in the above method, the first gas F1 (warm air) and the second gas F2 (cool air) are alternately supplied to each point of the peripheral portion W1. In other words, the first gas F1 (warm air) is intermittently supplied to each point of the peripheral portion W1 of the work W. By adopting such a configuration, it is possible to adjust the solidification rate of the processing liquid R.

[0098] In order to volatilize the solvent in the treatment liquid R and quickly dry the treatment liquid R in the same way as when heating the back surface of the work W with the heater H, a method of continuously supplying only the first gas F1 (warm air) to the peripheral portion W1 of the work W can be considered. Even in such a configuration, since the first gas F1 is supplied to the peripheral portion W1 from above the work W, it is possible to suppress the formation of the hump R1 due to the treatment liquid R at the peripheral portion W1 of the work W. Further, compared with the heating by the heater H, the temperature difference (temperature deviation) in the treatment liquid R becomes smaller, so the formation of the hump R1 is suppressed. However, if the first gas F1 (warm air) is continuously supplied to the surface of the work W, the drying rate of the treatment liquid R (the volatilization rate of the solvent) becomes faster. In this case, for the peripheral portion W1 of the work W, the drying of the treatment liquid R may be faster than other regions, which may affect the smoothness of the surface shape of the treatment film on the surface of the work W. Therefore, as described above, the solidification rate of the treatment liquid R may be adjusted by intermittently supplying the first gas F1 (warm air) to each point of the peripheral portion W1 of the work W.

[0099] In addition, as a method of intermittently supplying the first gas F1 (warm air), a method of not supplying the second gas F2 (cold air) may be used. That is, a configuration may be realized in which only the first gas F1 (warm air) is intermittently supplied at each position of the peripheral portion W1 of the work W without supplying the second gas F2 (cold air). As a method of realizing a configuration in which only the first gas F1 (warm air) is intermittently supplied at each position of the peripheral portion W1 of the work W using the gas supply nozzle 50, for example, supplying the first gas F1 (warm air) from all of the nozzle portions 52a to 52d can be mentioned. In this case, by adjusting the rotation speed of the work W, the first gas F1 can be intermittently supplied to each position of the peripheral portion W1 of the work W.

[0100] (Modification example) As described above, in order to suppress the formation of humps in the processing film, it is sufficient to be able to supply at least the first gas F1 (warm air) to each position of the peripheral portion W1 of the workpiece W. Further, if it is possible to intermittently supply the first gas F1 (warm air) to each position of the peripheral portion W1 of the workpiece W, the formation of humps can be further suppressed. Hereinafter, as a modification example, a modification example of a configuration in which the first gas F1 (warm air) is intermittently supplied to each position of the peripheral portion W1 of the workpiece W will be described.

[0101] FIG. 10(a) is a diagram showing a modified example of the installation positions of the nozzles 41a and 42a. In the above embodiment, an example in which the first gas F1 and the second gas F2 are supplied using the gas supply nozzle 50 has been described, but nozzles of other shapes may be used. FIG. 10(a) shows an example in which the nozzles 41a and 42a are attached to the upper end 26a of the cup 26. Even in this case, by adjusting the arrangement of the nozzles 41a and 42a so that the gas supplied from the openings of the nozzles 41a and 42a is directed toward the peripheral portion of the workpiece W, gas can be supplied to the peripheral portion of the workpiece W in the same manner as the gas supply nozzle 50. Although only one nozzle is shown in FIG. 10(a), a plurality of nozzles may of course be provided.

[0102] FIG. 10(b) shows a gas supply nozzle 50X whose shape is modified with respect to the gas supply nozzle 50. The gas supply nozzle 50X is different from the gas supply nozzle 50 in that the nozzle portions for supplying the first gas F1 and the second gas F2 are arranged in an annular shape. That is, in the gas supply nozzle 50X, the main body functions substantially as a plurality of nozzle portions. Even in the gas supply nozzle 50X having such a shape, by adjusting the arrangement of the opening for supplying the first gas F1 and the opening for supplying the second gas F2, the supply destinations of the first gas F1 and the second gas F2 can be appropriately adjusted. As an example, as shown in FIG. 10(b), a configuration can be adopted in which the first gas F1 and the second gas F2 are alternately supplied along the peripheral portion W1 of the workpiece W. Although FIG. 10(b) shows a configuration in which the first gas F1 and the second gas F2 are each supplied from four annular locations, this number can be appropriately changed.

[0103] FIG. 11 is a diagram for explaining a configuration when the configurations of the first gas supply unit 41 and the second gas supply unit 42 are realized by one nozzle unit. In FIG. 11, an example of a configuration is shown in which the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied to the downstream nozzle using one pipe 46. In this case, by controlling the temperature adjustment unit 47 and the on-off valve 48 on the pipe 46 by the control device 100, the type of gas supplied from the nozzle provided downstream of the pipe 46 can be changed. As an example of the control of the temperature adjustment unit 47, for example, the temperature of the second gas F2 may be adjusted by turning on the heater of the temperature adjustment unit 47, and the temperature of the second gas F2 may be adjusted by turning it off. Further, the set temperature by the temperature adjustment unit 47 may be set to two types, the temperature of the first gas F1 and the temperature of the second gas F2. Thus, when the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied from one pipe 46, the temperature of the gas supplied from the nozzle may be controlled by switching the setting of one temperature adjustment unit 47.

[0104] Note that, as a configuration when the first gas F1 (warm air) and the second gas F2 (cold air) are alternately supplied from one nozzle, a method using pipes 41b and 42b corresponding to two types of gases can also be adopted. Specifically, as shown in FIG. 3, pipes 41b and 42b corresponding to two types of gases are respectively provided, and a switching valve is further provided in front of the nozzle, so that the gas supplied from the nozzle may be selected from the first gas F1 (warm air) and the second gas F2 (cold air). Thus, the method for supplying the first gas F1 (warm air) and the second gas F2 (cold air) to the peripheral portion W1 of the work W can be appropriately changed.

[0105] FIG. 12 shows an example of a modified mechanism for holding the workpiece W. In the above embodiment, the case where the disk-shaped workpiece W is horizontally held by the spin chuck 21 and gas is supplied while rotating the workpiece W has been described. In addition, as a method for drying the workpiece W after supplying the processing liquid R, there may be a case where gas is supplied while horizontally transporting the workpiece W. Specifically, as shown in FIG. 12, the workpiece W can be horizontally transported by the transport mechanism 80. In this case, as shown in FIG. 12, the nozzles 41a and 42a are arranged above the peripheral edge W1 of the transported workpiece W. Then, by supplying the first gas F1 (warm air) and the second gas F2 (cool air) from each nozzle, the first gas F1 (warm air) and the second gas F2 (cool air) can be alternately supplied to each position of the peripheral edge W1 of the workpiece W transported by the transport mechanism 80.

[0106] Note that, as shown in FIG. 12, if the nozzles 41a and 42a are alternately arranged along one peripheral edge of the workpiece W, the first gas F1 (warm air) and the second gas F2 (cool air) can be alternately supplied to each position of the peripheral edge W1 of the workpiece W. Also, as shown in FIG. 12, the nozzles 41a and 42a may be arranged so as to be elongated along the moving direction of the workpiece W. At this time, by adjusting the length in the longitudinal direction (the length of the region where the opening exists), the supply time of the first gas F1 (warm air) and the second gas F2 (cool air) to each position of the workpiece W can be adjusted. Also, the transport speed of the workpiece W by the transport mechanism 80 can be used to adjust the supply time of the first gas F1 (warm air) and the second gas F2 (cool air).

[0107] [Operation] According to the above-described substrate processing apparatus and substrate processing method, a first gas F1 at a first temperature higher than room temperature is supplied to the peripheral portion W1 of the surface of the workpiece W (substrate) held by the spin chuck 21 as the substrate holding portion. By supplying the first gas F1, the processing liquid on the peripheral portion W1 of the workpiece W dries in a state where the processing liquid is in contact with the first gas F1. Therefore, compared with the conventional method, the drying rate of the processing liquid is adjusted, and as a result, the formation of humps at the peripheral portion W1 is suppressed. Therefore, it becomes possible to form a processing film with a uniform film thickness on the substrate.

[0108] As described above, the cause of the formation of the hump R1 at the peripheral portion of the workpiece W is the temperature difference in the processing liquid on the workpiece W. On the other hand, by drying the processing liquid R while supplying the first gas F1 as described above, the temperature difference in the processing liquid R can be adjusted, and as a result, the formation of humps is suppressed. Therefore, it becomes possible to form a processing film with a uniform film thickness on the workpiece W.

[0109] In addition, when the first gas F1 is intermittently supplied, the formation of humps at the peripheral portion W1 of the workpiece W is further suppressed, and it becomes possible to form a processing film with a more uniform film thickness on the substrate.

[0110] Further, the gas supply unit 40 that supplies the first gas F1 may have a nozzle 41a (first nozzle portion) that is provided above the peripheral portion W1 and supplies the first gas F1. In this way, when the first gas F1 is supplied from above the workpiece W, the formation of humps at the peripheral portion W1 is further suppressed, and it becomes possible to form a processing film with a more uniform film thickness on the workpiece W.

[0111] In addition, the gas supply unit 40 may alternately supply the first gas F1 and a second gas F2 at a second temperature lower than the first temperature to each position of the peripheral portion W1 of the workpiece W. By adopting such a configuration, the drying rate of the processing liquid at the peripheral portion W1 is adjusted, and the formation of humps at the peripheral portion W1 is suppressed. Therefore, it becomes possible to form a processing film with a more uniform film thickness on the workpiece W.

[0112] Note that the gas supply unit 40 may be capable of simultaneously supplying the first gas F1 and the second gas F2 to different positions on the surface of the workpiece W. In the case of such a configuration, the first gas and the second gas can be quickly supplied to each position of the substrate.

[0113] Further, it may further include a nozzle 42a (second nozzle portion) for supplying the second gas. By separately providing the second nozzle portion, the supply of the first gas F1 and the second gas F2 can be performed independently.

[0114] Further, a plurality of first nozzle portions and second nozzle portions may be provided, and the first nozzle portion and the second nozzle portion may be alternately arranged along the peripheral edge above the peripheral edge of the substrate. In this case, as described in the above embodiment, by relatively moving the substrate along the extending direction of the peripheral edge W1 (for example, rotating the workpiece W), a configuration in which the first gas and the second gas are alternately supplied to each position of the peripheral edge W1 can be realized.

[0115] As described above, various exemplary embodiments have been described. However, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and changes may be made. Further, it is possible to form other embodiments by combining elements in different embodiments.

[0116] For example, in the above embodiment, the so-called spin coating method of applying the treatment liquid from the center while rotating the circular workpiece W has been described. However, the method described above can be applied regardless of the method of applying the treatment liquid to the workpiece W. That is, it can also be applied when the treatment liquid is applied to the workpiece W using the so-called squeegee method.

[0117] From the above description, it will be understood that the various embodiments of the present disclosure are described in this specification for the purpose of explanation, and various changes can be made without departing from the scope and gist of the present disclosure. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and gist are indicated by the appended claims.

Description of Symbols

[0118] 1... Substrate processing system, 2... Coating / development apparatus, 3... Exposure apparatus, 11 - 14... Processing modules, 21... Spin chuck, 22... Rotation drive unit, 26... Cup, 26a... Upper end, 31... Processing liquid supply unit, 40... Gas supply unit, 41... First gas supply unit, 41a... Nozzle, 41b... Pipe, 41c... Temperature adjustment unit, 41d... On-off valve, 42... Second gas supply unit, 42a... Nozzle, 42b... Pipe, 42c... Temperature adjustment unit, 42d... On-off valve, 45... Gas supply source, 46... Pipe, 47... Temperature adjustment unit, 48... On-off valve, 50, 50X... Gas supply nozzles, 51... Main body part, 52a - 52d... Nozzle parts, 80... Conveying mechanism, 100... Control device.

Claims

1. A substrate processing apparatus for forming a processing film on the surface of a substrate, comprising: a substrate holding unit that holds a substrate coated with a processing liquid before drying for forming the processing film; a gas supply unit including a first nozzle unit that supplies a first gas at a first temperature higher than room temperature to the peripheral edge of the surface of the substrate held by the substrate holding unit; and the gas supply unit alternately supplies the first gas and a second gas at a second temperature lower than the first temperature to each position of the peripheral edge of the substrate. A substrate processing apparatus.

2. The substrate processing apparatus according to claim 1, wherein the gas supply unit intermittently supplies the first gas to each position of the peripheral edge of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein the first nozzle unit supplies the first gas to the peripheral edge of the substrate from above the peripheral edge of the substrate.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein the gas supply unit can simultaneously supply the first gas and the second gas to different positions on the surface of the substrate.

5. The substrate processing apparatus according to claim 4, wherein the gas supply unit further includes a second nozzle unit that supplies the second gas provided above the peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 5, comprising a plurality of the first nozzle units and the second nozzle units, and the first nozzle units and the second nozzle units are alternately arranged along the peripheral edge above the peripheral edge of the substrate.

7. a first pipe that supplies the first gas to the first nozzle unit; a first temperature adjustment unit that adjusts the temperature of the gas flowing through the first pipe to the first temperature; a second pipe that supplies the second gas to the second nozzle unit; a second temperature adjustment unit that adjusts the gas flowing through the second pipe to the second temperature; and the substrate processing apparatus according to claim 5 or 6.

8. The substrate processing apparatus according to any one of claims 1 to 3, wherein the first nozzle unit alternately supplies the first gas and the second gas to the surface of the substrate.

9. a pipe that supplies the gas to the first nozzle unit; a temperature adjustment unit that adjusts the temperature of the gas supplied from the first nozzle unit to the substrate; and The substrate processing apparatus according to claim 8, wherein the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the first temperature and the second temperature.

10. The substrate processing apparatus according to claim 9, wherein the temperature adjusting unit switches the temperature of the gas flowing through the pipe between the first temperature and the second temperature by switching between an on state and an off state of the power supply of a heater that heats the gas flowing through the pipe.

11. The substrate processing apparatus according to claim 9, wherein the temperature adjusting unit switches the temperature of the gas flowing through the pipe to the first temperature and the second temperature by changing the setting of a heater that heats the gas flowing through the pipe.

12. A first pipe that supplies the first gas to the first nozzle unit, A second pipe that supplies the second gas to the first nozzle unit, A temperature adjusting unit that adjusts the temperature of the gas supplied from the first nozzle unit to the substrate, comprising: The substrate processing apparatus according to claim 8, wherein the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching the pipe that supplies the gas to the nozzle unit between the first pipe and the second pipe.

13. The substrate processing apparatus according to any one of claims 1 to 12, wherein the substrate holding unit is a rotating mechanism that adsorbs the substrate and rotates it horizontally.

14. Further comprising a cup disposed around the substrate holding unit so as to surround the periphery of the substrate supported by the substrate holding unit, The substrate processing apparatus according to claim 13, wherein the gas supply unit supplies the first gas to the peripheral edge of the surface of the substrate from a supply port attached to the cup.

15. The substrate processing apparatus according to any one of claims 1 to 12, wherein the substrate holding unit is a transport mechanism that transports the substrate in a horizontal direction.

Images