Electronics module and method for manufacturing an electronics module

Abstract

To provide a novel electronics module.SOLUTION: An electronics module (100) comprises: a metal-ceramic substrate (1) having a ceramic element (10) and a primary component metallization (21); an insulation layer (40) directly or indirectly connected to the primary component metallization (21); and a secondary component metallization (22) which is connected to a side of the insulation layer (40) facing away from the metal-ceramic substrate (1). The island-like insulation layer (40) is formed on the primary component metallization (21). At least one recess (45) is formed in the primary component metallization (21). The island-like insulation layer (40) and the secondary component metallization (22) are arranged in the recess such that the primary component metallization (21) and the secondary component metallization (22) are flush with each other.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to an electronics module and a method for manufacturing an electronics module. [Background technology]

[0002] In the prior art, particularly in power electronics, electronic modules in which metal-ceramic substrates function as printed wiring boards are known. For example, metal-ceramic substrates are known as printed wiring boards or wiring boards from the prior art (e.g., Patent Documents 1, 2, and 3). Typically, termination areas for electrical components and conductive tracks are arranged on one component side of the metal-ceramic substrate, which can be interconnected to form an electrical circuit. Essential components of a metal-ceramic substrate are an insulating layer (preferably made of a ceramic material) and at least one metal layer connected to the insulating layer. Insulating layers made of ceramic materials have proven particularly advantageous in power electronics due to their relatively high dielectric strength. Conductive tracks and / or termination areas for electrical components can be realized by patterning the metal layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] German Patent Application Publication No. 102013104739 [Patent Document 2] German Patent Invention No. 19927046 [Patent Document 3] German Patent Application Publication No. 102009033029 Summary of the Invention

[0004] The object of the present invention is to provide an electronics module which is improved compared to electronics modules known from the prior art, in particular with regard to the manufacturing effort and efficiency in the utilization of the substrate area of the metal-ceramic substrate.

[0005] This object is achieved by providing an electronics module according to claim 1 and a method according to claim 5. Further advantages and features arise from the subclaims as well as from the present description and the accompanying drawings.

[0006] According to a first aspect of the present invention, a metal-ceramic substrate serving as a carrier and having a ceramic element and a main component metallization, preferably a cooling component metallization or a backside component metallization; an insulating layer connected directly or indirectly to the primary metallization; a secondary metallization connected to a side of the insulating layer opposite the metal-ceramic substrate and separated from the primary metallization by the insulating layer, among other things; Equipped with the ceramic elements have a first size and the insulating layer has a second size, and the ratio of the second size to the first size is less than 0.8, preferably less than 0.6, and more preferably less than 0.4, thereby forming islands of insulating layer on the primary metallization; An electronics module, particularly a power electronics module, is provided.

[0007] In comparison with electronic modules known from the prior art, island-like insulating layers are provided, which in particular provide electrical insulation between the primary and secondary metallizations. This means that it is no longer necessary to pattern the primary metallization to form electrical wiring or conductive tracks; the use of insulating layers makes it possible to arrange various electrical components so that they are electrically isolated from one another, and to establish specific connections without the need for patterning the primary metallization. The insulating layers are preferably connected directly to the primary metallization.

[0008] Alternatively, for example, the insulating layer may be part of another (especially smaller) metal-ceramic substrate, which is placed on a larger metal-ceramic substrate that serves as a carrier and connected to the metal-ceramic substrate by a DCB or active soldering process or adhesive. In particular, the insulating layer is a relatively thin insulating layer made of ceramic and contributes to the electrical insulation of the secondary metallization from the primary metallization. It is particularly intended that the electronics module or the configuration of the primary and secondary metallizations is not completely embedded in an encapsulation or housing. Those skilled in the art will understand that the first size refers to the first thickness and / or first length or width and / or area of the ceramic element, and the second size refers to the second thickness and / or second length or width and / or area of the insulating layer, respectively. In this context, the insulating layer may be strip-shaped or have an oval, circular, diamond-shaped, and / or square cross section. Preferably, the insulating layer is completely surrounded by the primary metallization in a plane parallel to the main extension plane. Alternatively, it is conceivable that the insulating layer is disposed at the edges of the primary metallization, so that the insulating layer is surrounded by the primary metallization on at most three or two sides in planes extending parallel to the plane of primary extension.

[0009] Furthermore, it is particularly preferred that the insulating layer protrudes from the outermost edge of the secondary metallization, particularly in the circumferential direction, in order to prevent electrical flashover between the secondary and primary metallizations. The insulating layer preferably protrudes circumferentially along the outermost edge of the insulating layer or of the secondary metallization, in a direction parallel to the main extension plane of the metal-ceramic substrate relative to the outermost edge of the secondary metallization, by 10 μm to 500 μm, preferably 50 μm to 250 μm, and particularly preferably 100 to 150 μm. In other words, the insulating layer is formed so that its outermost edge protrudes from the secondary metallization, thereby preventing electrical flashover and forming a "pullback" that provides complete electrical isolation of the secondary metallization from the primary metallization.

[0010] Furthermore, the ratio of the second thickness to the first thickness is 0.03 to 0.8, preferably 0.03 to 0.5, and particularly preferably 0.03 to 0.3. For example, the second thickness has a value of 500 μm to 1 mm, preferably 200 μm to 500 μm, and particularly preferably 10 μm to 200 μm. It has been found that sufficient insulating strength can be achieved using a relatively thin insulating layer. For mechanical stability, the insulating layer preferably uses a metallization-based material. The relatively thin second thickness advantageously simplifies the realization of fine patterns or separations between electrical components or insulating layers.

[0011] In particular, it is advantageous to use the smallest possible insulating layer, in particular the thinnest possible insulating layer, thereby saving insulating material. Furthermore, it is relatively easy to pattern the insulating layer, so that relatively small patterns can be realized. Furthermore, a suitable design with island-shaped insulating layers can provide an electrical module with relatively low parasitic inductance. Furthermore, it is advantageous to optimize the use of electrical components arranged over the entire surface of the metal-ceramic substrate.

[0012] Furthermore, the primary or secondary component metallization and / or the cooling component metallization are directly connected to the insulating layer, for example, using DCB, AMB, or thin-film techniques. Furthermore, the metal-ceramic substrate or another metal-ceramic substrate may comprise at least one metal layer, e.g., as part of the cooling component metallization or of the primary or secondary component metallization, substantially connected to the outer surface of the ceramic element or of the insulating layer, the metal layer and the ceramic element extending along the plane of extension and arranged one above the other along a stacking direction extending perpendicular to the plane of extension. Materials for the metallization or metal portion, i.e., the primary component metallization, the secondary component metallization, the cooling component metallization, and / or the backside metallization, may include copper, aluminum, molybdenum, and / or alloys thereof, as well as stacks of CuW, CuMo, CuAl, AlCu, and / or CuCu, and in particular copper sandwich structures having a first copper layer and a second copper layer, the grain size of the first copper layer being different from that of the second copper layer. Furthermore, at least one metallization, either the primary or secondary metallization, is preferably surface-modified, for example by using precious metals, particularly silver and / or gold, in the first or second metallization layer, or electroless nickel immersion gold (ENIG), or sealing with edge grout to inhibit crack formation or crack propagation.

[0013] Preferably, the ceramic element and / or insulating layer comprises at least one ceramic layer, including Al2O3, Si3N4, AlN, any HPSX ceramic (i.e., a ceramic with an Al2O3 matrix containing X percent ZrO2 (e.g., Al2O3 = HPS9 with 9% ZrO2 or Al2O3 = HPS25 with 25% ZrO2)), SiC, BeO, MgO, high-density MgO (greater than 90% of theoretical density), TSZ (tetragonal stabilized zirconium oxide), or ZTA. To combine various desirable properties, it is also conceivable to design the insulating layer or ceramic element as a composite or hybrid ceramic, in which several ceramic layers with different material compositions are arranged one on top of the other and connected to form an insulating layer. To achieve the lowest possible thermal resistance, it is preferable to use a ceramic material with the highest possible thermal conductivity. It is also conceivable to arrange a metal interlayer in the ceramic element or in the insulating layer between two ceramic layers.

[0014] In this case, the main component metallization and / or the cooling component metallization are preferably substantially connected to the insulating layer using AMB and / or DCB techniques.

[0015] Those skilled in the art will understand that the "DCB (direct copper bond) method" (direct copper bonding technology) or "DAB (direct aluminum bond) method" (direct aluminum bonding technology) is a type of method used to bond metal layers or sheets (e.g., copper sheets or foils or aluminum sheets or foils) to each other and / or to ceramics or ceramic layers, for example by using a metal or copper sheet or foil with a layer or coating (bonding layer) on the surface side. In this method, as described for example in U.S. Pat. No. 3,744,120 or German Patent No. 2,319,854, this layer or coating (bonding layer) forms a eutectic below the melting temperature of the metal (e.g., copper) so that they can be connected to each other by placing the foil on the ceramic and heating all layers, i.e., essentially melting the metal or copper only in the area of the bonding layer or oxide layer.

[0016] In particular, the DCB process comprises, for example, the following process steps: oxidizing the copper foil to form a uniform copper oxide layer; placing a copper foil on the ceramic layer; heating the composite to a process temperature of approximately 1025-1083°C (e.g., approximately 1071°C); Cooling to room temperature; Includes.

[0017] For example, the active soldering method for joining a metal layer or foil, particularly a copper layer or foil, to a ceramic material is specifically a method also used in the manufacture of metal-ceramic substrates. A hard solder containing an active metal in addition to a main component such as copper, silver, and / or gold is used to bond a metal foil (e.g., copper foil) to a ceramic substrate (e.g., aluminum nitride ceramic) at a temperature of 600-1000°C. The active metal is, for example, at least one element selected from the group consisting of Hf, Ti, Zr, Nb, and Ce, which forms a bond between the solder and the ceramic through a chemical reaction. On the other hand, the bond between the solder and the metal is a metal brazing bond. Alternatively, a connection using a thick film method is also possible.

[0018] At least one first electrical component is connected to each primary metallization and at least one second electrical component is connected to each secondary metallization, preferably directly adjacent to each other, such that the at least one first electrical component and the at least one second electrical component are electrically insulated from each other via the insulating layer.

[0019] Preferably, the at least one first electrical component and / or the at least one second electrical component are switchable or active or passive components, preferably wide bandgap (WBG) semiconductors, such as semiconductors made of silicon carbide, gallium nitride, and / or indium gallium nitride. Examples of electrical components are metal-oxide-semiconducting field-effect transistors (MOSFETs) or insulated-gate bipolar transistors (IGBTs).

[0020] Preferably, the at least one first electrical component and the at least one second electrical component are connected to one another by wire bonding, which is advantageous because it allows the electrical connection between the at least one first electrical component and the at least one second electrical component to be realized without using the main metallization of the metal-ceramic substrate in particular, in other words, the wire bonding connection replaces conductive tracks that would otherwise be required and that are formed by patterning the main metallization.

[0021] In particular, the primary metallization is conductively connected to the secondary metallization by through-plating or side plating. For example, recesses are integrated into the insulating layer, which are filled with a conductive medium (particularly the metal of the secondary metallization) during the formation of the secondary metallization. Alternatively, during the formation of the secondary metallization, a portion that protrudes beyond the outermost edge in a direction parallel to the main extension plane may still exist (i.e., not be removed during patterning of the secondary metallization). In other words, the secondary metallization at least partially protrudes or overhangs the outermost edge of the insulating layer. As a result, the secondary metallization extends around the insulating layer, thereby forming side plating that overlaps or bypasses the outermost edge of the insulating layer and establishes a connection to the primary metallization.

[0022] Preferably, the primary metallization of the metal-ceramic substrate is either unpatterned and does not extend to the ceramic element, or is unpatterned or does not extend to the ceramic element. This advantageously avoids otherwise expensive etching processes, particularly those that require the removal of the boundary layer between the ceramic element and the primary metallization during the "second etch." Essentially, this allows for the elimination of multiple patterns or the elimination of most of the patterning in the primary metallization, which advantageously reduces the amount of free surface area in the primary metallization compared to conventional primary metallizations and improves the primary metallization's heat dissipation or heat transport properties, since the primary metallization can be optimally designed for heat dissipation.

[0023] Alternatively, patterning of the primary metallization is conceivable. By "patterning," it is particularly understood that the primary metallization extends to the ceramic element. For example, the free surface area, i.e., the isolation trench formed by the patterning, can be filled at least partially, preferably completely, or in layers with an insulating layer and / or another insulating layer and / or a filling compound, in particular an electrically insulating filling compound. In particular, when a filling compound is used, the insulating layer bridges the formed isolation trench, and the filling compound supports or carries the insulating layer. For example, the filling compound is a plastic material or resin. Similarly, patterning allows for separation through the insulating layer in a direction perpendicular to the primary extension plane, as well as further separation of the metal parts, in particular in a plane parallel to the primary extension plane.

[0024] Preferably, at least one recess is inserted into the primary metallization, and the island-shaped insulating layer and / or secondary metallization, and / or the first and / or second electrical component are disposed in the recess. This allows the secondary metallization to be positioned flush with the primary metallization, thereby advantageously positioning the connections on the primary and secondary metallization in the same plane, particularly a plane extending parallel to the primary extension plane. This significantly improves electrical connections, especially via wire bonding. It is also possible to suppress electrical vibrations in electronic modules using vibration-damping elements, such as snubbers with resistors and capacitors. Such vibration-damping elements also have a beneficial effect on the inductance of the electronic module.

[0025] In particular, the recess may be dimensioned so that, in an assembled state, the at least one first electrical component and / or the at least one second electrical component are positioned below an upper surface of the primary metallization, or so that, in an assembled state, the upper surface of the primary metallization is positioned flush with an upper surface of the at least one first electrical component and / or the at least one second electrical component. This advantageously facilitates establishing electrical connections through the upper surfaces of the at least one first electrical component and / or the at least one second electrical component. It is also conceivable that the electronics module comprises an encapsulation in which a metal-ceramic substrate having an insulating layer and a secondary metallization is embedded. In particular, the recess may be adapted to fit the encapsulation. Furthermore, it is conceivable to incorporate through-plating into the encapsulation, for example, to enable activation of the first, second, and / or third electrical components via external metallization on the encapsulation.

[0026] For example, the recesses have a depth in the stacking direction of 50 μm to 800 μm, preferably 70 μm to 600 μm, and particularly preferably 100 μm to 400 μm. This means that most common electrical components such as chips can be built into or embedded in the recesses. The depth may also be less than 150 μm, preferably less than 100 μm, and particularly preferably less than 70 μm.

[0027] The secondary metallization is preferably patterned to form a metal portion and at least one other metal portion separated from the metal portion. Because the primary metallization can be used primarily for heat dissipation, while the secondary metallization is preferably provided to insulate the metal portions from one another, the secondary metallization is preferably thinner than the primary metallization. The primary metallization is preferably more than five times, preferably ten times, and particularly preferably more than twenty times thicker than the secondary metallization. This allows, for example, a plurality of second electrical components and / or at least one third electrical component to be connected to the insulating layer or the secondary metallization, respectively.

[0028] Another object of the invention is to provide a method for manufacturing an electronics module, in particular an electronics module according to the invention, comprising the steps of: providing a metal-ceramic substrate having a ceramic element and a primary component metallization, preferably a cooling component metallization; forming insulating island layers on the primary metallization, the ceramic elements having a first size and the insulating layer having a second size, the insulating island layers formed on the primary metallization being sized such that the ratio of the second size to the first size is less than 0.8, preferably less than 0.6, and more preferably less than 0.5; forming a secondary metallization on the insulating island layer; Includes:

[0029] All advantages and features described with respect to the electronics module equally apply to the method, and vice versa. To form an island-shaped insulating layer, a layer, in particular a continuous layer made of insulating material, is connected to the main metallization and the connecting layer of insulating material is patterned; Preferably, an insulating material is patterned on the main metallization using a mask. The insulating material is preferably a ceramic-containing insulating material. For example, the patterning is performed using a laser or as part of an etching or milling process. In the context of the masking application, it is conceivable to apply the insulating material to the main metallization using a deposition process, in particular a sputtering or vapor deposition process. This allows the production of a relatively thin insulating layer that has an insulating effect and can be applied particularly material-savingly.

[0030] Preferably, a layer of metallic material is connected to a pre-composite comprising a metal-ceramic substrate and an island-like insulating layer, and the secondary metallization is formed by patterning the layer of metallic material connected to the pre-composite. For example, it is conceivable to produce an initial secondary metallization having a thickness of only a few micrometers, in particular up to 30 μm, during a vapor deposition process. This initial secondary metallization can then be expanded to achieve a secondary metallization that is thicker than the initial secondary metallization. For example, the increase in metallization thickness is performed as part of an electroplating or electrochemical process. Both the initial secondary metallization and the secondary secondary metallization have a full extent or extend over a large portion of the area outside the main metallization and the insulating layer. In particular, the insulating layer will be coated over the entire surface after the formation of the secondary metallization. For electrical isolation of subsequent component metallizations, the patterning of the component metallization or sub-component metallization is carried out in an etching process, a milling process, or a process in which metal is removed by the use of a laser, particularly in conjunction with the removal of component metallizations during the formation of the initial and preliminary sub-component metallizations.

[0031] More preferably, at least one first electrical component is connected to the primary metallization and at least one second electrical component is connected to the secondary metallization; at least one first component and / or main component metallization; Preferably, the at least one second electrical component and / or the subcomponent metallization are electrically conductively connected to one another by wire bonding. In this way, wire bonding connections can be used to advantageously replace conductive tracks that are typically provided to connect the at least one electrical component to the at least one second electrical component. This may be particularly advantageous in the manufacture and packaging of electronic modules.

[0032] Other advantages and features will become apparent from the following description of preferred embodiments of the object of the present invention, which description refers to the accompanying drawings, in which the individual features of the individual embodiments can be combined with one another within the scope of the present invention. [Brief explanation of the drawings]

[0033] [Figure 1] 1A to 1C are schematic exploded views of an electronics module according to a first exemplary embodiment of the present invention in a mounted state, an unmounted state, and an assembled state, respectively; [Figure 2] 3 illustrates schematically an electronics module according to a second exemplary embodiment of the present invention. [Figure 3] 10 schematically illustrates an electronics module according to a third exemplary embodiment of the present invention. [Figure 4] 10 schematically illustrates an electronics module according to a fourth exemplary embodiment of the present invention. [Figure 5] 10 schematically illustrates an electronics module according to a fifth exemplary embodiment of the present invention. [Figure 6a] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 6b] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 6c] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 6d] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 6e] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 6f] 1 illustrates a schematic diagram of a method for manufacturing an electronics module according to a first exemplary embodiment of the present invention; [Figure 7a] 5A and 5B illustrate a method of manufacturing an electronics module according to a second exemplary embodiment of the present invention; [Figure 7b] 5A and 5B illustrate a method of manufacturing an electronics module according to a second exemplary embodiment of the present invention; [Figure 7c] 5A and 5B illustrate a method of manufacturing an electronics module according to a second exemplary embodiment of the present invention; [Figure 7d] 5A and 5B illustrate a method of manufacturing an electronics module according to a second exemplary embodiment of the present invention; [Figure 7e] 5A and 5B illustrate a method of manufacturing an electronics module according to a second exemplary embodiment of the present invention; [Figure 8a] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 8b] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 8c] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 8d] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 8e] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 8f] 5A and 5B illustrate a method for manufacturing an electronics module according to a third exemplary embodiment of the present invention; [Figure 9a] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 9b] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 9c] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 9d] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 9e] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 9f] 10A and 10B illustrate a method for manufacturing an electronics module according to a fourth exemplary embodiment of the present invention; [Figure 10a] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 10b] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 10c] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 10d] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 10e] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 10f] 10A and 10B illustrate a method for manufacturing an electronics module according to a fifth exemplary embodiment of the present invention; [Figure 11a] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; [Figure 11b] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; [Figure 11c] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; [Figure 11d] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; [Figure 11e] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; [Figure 11f] 10A and 10B illustrate a method for manufacturing an electronics module according to a sixth exemplary embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0034] FIG. 1 shows a schematic exploded view of an electronics module 100 according to a first exemplary embodiment of the present invention in an unassembled state (top), an assembled state (middle), and a combined state (bottom). Such an electronics module 100, particularly a power electronics module, comprises a metal-ceramic substrate 1 as a carrier for at least one first electrical component 51. The metal-ceramic substrate 1 serving as a carrier comprises a ceramic element 10, to which a main component metallization 21 and a cooling component metallization 20 are connected on both sides. The main component metallization 21 and the cooling component metallization 20 are preferably connected to the ceramic element 10 by the DAB or DCB method, i.e., direct connection method, or by active soldering. The at least one electrical component 51 can be connected to the metal-ceramic substrate 1, for example, via a first solder material 31. For example, the at least one first electrical component 51 can be a chip or a microprocessor.

[0035] Typically, in the prior art, at least one electrical component 51 is arranged on a metal-ceramic substrate 1, electrically isolated from at least one second electrical component 52 by the structuring of the primary metallization 21. However, in this embodiment of the invention, an insulating layer 40 electrically insulates at least one first electrical component 51 from at least one second electrical component 52. In the exemplary embodiment shown in FIG. 1 , the insulating layer 40 forms part of a further metal-ceramic substrate 2, which is smaller in size than the carrier substrate 1. In particular, the further metal-ceramic substrate 2 is two times, preferably four times, and particularly preferably 7.5 times smaller than the carrier substrate 1. In addition to the insulating layer 40, the further metal-ceramic substrate 2 comprises a back metallization 23 and a secondary metallization 22 opposite the back metallization 23. The further metal-ceramic substrate 2 is connected to the primary metallization 21 via a bonding layer 15. In particular, the backside metallization 23 of the further metal-ceramic substrate 2 is connected to the main component metallization 21 via a bonding layer 15, which can be established by DCB or DAB direct bonding methods and / or by using adhesive and active solder material or adhesive or active solder material.

[0036] Furthermore, it is particularly preferred that at least one second electrical component 52 is connected to at least a portion of the secondary component metallization 22 via a second solder material 32. In this regard, the second solder material 32 may be the same as or different from the first solder material 31.

[0037] 1 is characterized in that the ceramic elements 10 of the metal-ceramic substrate 1 have first sizes L1, D1 and the insulating layer 40 has second sizes L2, D2, with the ratio of the second sizes L2, D2 to the first sizes L1, D1 being less than 0.8, preferably less than 0.6, particularly preferably less than 0.4, in order to form islands of the insulating layer 40 on the primary metallization 21. In particular, the insulating layer 40 prevents at least one first electrical component 51 from being electrically conductively connected to at least one second electrical component 52 via the primary metallization 21. In this context, those skilled in the art will consider the first quantities L1, D2 as the first length L1 measured along the main extension plane HSE of the metal-ceramic substrate 1 and / or the first thickness D1 of the ceramic element 10 measured perpendicular to the main extension plane HSE, and the second quantities L2, D2 as the second length L2 measured parallel to the main extension plane HSE and / or the second thickness D2 measured perpendicular to the main extension plane HSE. The second thickness D2 of the insulating layer 40 is preferably smaller than the first thickness D1 of the ceramic element 10. For example, the second thickness D2 is less than 0.8 times the first thickness D1, preferably less than 0.5 times the first thickness D1, and particularly preferably less than 0.3 times the first thickness D1.

[0038] FIG. 2 illustrates an electronics module 100 according to a second exemplary embodiment of the present invention. Essentially, the embodiment of FIG. 2 is a complement to the embodiment of FIG. 1 in that at least one first electrical component 51 is conductively connected to a secondary metallization 22 by wire bonds 8. In other words, instead of establishing an electrical connection between the at least one first electrical component 51 and the at least one second electrical component 52 via the primary metallization 21, the wire bonds 8 create a connection between the at least one first electrical component 51 and the at least one second electrical component 52, the second electrical component 52 being electrically isolated from the primary metallization 21 via an insulating layer 40. The secondary metallization 22 is preferably patterned in such a way that separate, and particularly electrically isolated, metal portions are formed on the secondary metallization 22. Furthermore, the electronics module 100 particularly preferably includes terminal lugs 16 and / or electrical contact means for establishing electrical contact with the primary metallization 21 and / or the secondary metallization 22. For example, in the exemplary embodiment shown in Figure 2, one terminal lug 16 is for connecting a positive electrode to the primary metallization 21, another terminal lug 16 is for connecting a negative electrode to the secondary metallization 22, and additional terminals including terminal lugs 16 are provided for sensing output signals. Furthermore, it is conceivable to connect different metal portions of the secondary metallization 22 together by wire bonds 8 or additional wire bonds 8.

[0039] FIG. 3 illustrates a third exemplary embodiment of the present invention. In particular, the embodiment of FIG. 3 differs from the embodiment of FIGS. 1 and 2 in that the insulating layer 40 is directly connected to the primary metallization 21 instead of indirectly connected via the backside metallization 23 of a separate metal-ceramic substrate 2. This advantageously eliminates the need for the backside metallization 23 of the embodiment of FIGS. 1 and 2. Furthermore, the insulating layer 40 has a second thickness D2, and the ceramic element 10 has a first thickness D1, with the ratio of the second thickness D2 to the first thickness D1 being between 0.03 and 0.8, preferably between 0.03 and 0.5, and particularly preferably between 0.03 and 0.3. For example, the second thickness D2 may be between 500 μm and 1 mm, preferably between 200 μm and 500 μm, and particularly preferably between 10 μm and 200 μm.

[0040] Furthermore, the insulating layer 40 has a second length L2, measured along the main extension plane HSE of the metal-ceramic substrate 1, and the secondary metallization 22 has a third length L3, measured along the main extension plane HSE, the second length L2 being smaller than the third length L3. In particular, the ratio of the second length L2 to the third length L3 is between 0.7 and 0.9, preferably between 0.75 and 0.85, and particularly preferably between 0.78 and 0.82. The secondary metallization 22 is preferably recessed in relation to the outermost edge of the insulating layer 40 in the direction of the main extension plane HSE, in particular in the circumferential direction of the entire insulating island 40. This generates, in particular, a circumferential protrusion of the insulating layer 40 with respect to the secondary metallization 22, which prevents electrical flashover, in particular between the secondary metallization 22 and the primary metallization 21, in particular in the case of a relatively thin layer or layer thickness of the insulating layer 40, i.e., compared to the relatively thin second thickness D2. Furthermore, it is conceivable that the primary metallization 21 is not patterned, extending up to the ceramic element 10. Furthermore, the metal-ceramic substrate 1 has a first length L1, which is dimensioned parallel to the main extension plane HSE, and the ratio of the second length L2 to the first length L1 is less than 0.8, preferably less than 0.6, particularly preferably less than 0.4.

[0041] 4 shows an electronics module 100 according to a fourth preferred embodiment of the present invention. In particular, the exemplary embodiment of FIG. 4 differs from the above-described embodiments by the fact that the primary metallization 21 has recessed passages in which an insulating layer 40 is embedded or disposed or formed, i.e., it forms at least one recess 45. By inserting the insulating layer 40 in the recess 45, in particular together with the secondary metallization 22, a coplanar termination along the stacking direction S extending perpendicular to the main extension plane HSE between the primary metallization 21 and the secondary metallization 22 is achieved, thereby providing a flat surface by the primary metallization 21 and the secondary metallization 22, in particular by their respective faces opposite the ceramic element 10.

[0042] Advantageously, this provides a common connection plane, which makes it easier to realize connections between the primary metallization 21 and the secondary metallization 22 or between at least one first electrical component 51 and at least one second electrical component 52. It is also conceivable to provide a device between the primary metallization 21 and the secondary metallization 22 for damping undesired electrical oscillations. For example, this is a snubber 47. In particular, such a snubber 47 is provided between the primary metallization 21 and the secondary metallization 22 to damp electrical oscillations. For example, it is advantageous to arrange the snubber 47 on the connection plane provided jointly by the primary metallization 21 and the secondary metallization 22.

[0043] FIG. 5 illustrates an electronics module 100 according to a fifth exemplary embodiment of the present invention. In particular, in this embodiment, the insulating layer 40 supports at least one second electrical component 52 as well as at least one third electrical component 53, which may be, for example, a passive or active SMD component. In particular, the area below the electrical component 53 dissipates heat from other components (i.e., the first electrical component 51 and the second electrical component 52). The insulating layer 40 allows mounting of the third electrical component 53 in this area, especially when the amount of heat generated by the third electrical component 53 is relatively small. In this way, the top surface of the metal-ceramic substrate 1, which serves as a carrier, is used for optimal mounting as comprehensively as possible.

[0044] 6a-6f illustrate a method for manufacturing an electronics module 100 according to a preferred embodiment of the present invention. In particular, a metal-ceramic substrate 1 is prepared in a step not shown. Then, an insulating layer 40 is formed at least partially, preferably over the entire surface, by applying a ceramic material in the form of a thin film. By targeted local removal in specific areas of the upper surface of the metal-ceramic substrate 1, the entire insulating layer 40 is reduced to islands of insulating layer 40, the second length L2 of which is smaller than the first length L1 of the metal-ceramic substrate 1 or the first ceramic element 10. For example, laser light 55 provided by a laser source 56 is used to remove or partially remove the insulating layer 40 (see FIG. 6b). FIG. 6c illustrates a preliminary composite free of unwanted areas of the insulating layer 40. After the removal of the insulating layer 40, an initial secondary metallization 22′ is applied. In particular, this initial secondary metallization 22′ is applied as part of a deposition process, in particular a chemical or physical vapor deposition process, such as sputtering, PVD, CVD, PECVD, or other thin-film process. As a result, an initial minor metallization 22' is continuously formed over the entire surface of the major metallization 21 and the insulating island 40. This is shown in Figure 6d.

[0045] After forming the thin film of initial minor metallization 22', the thickness of initial minor metallization 22' is increased, for example by electroplating or an electrochemical process, to form a pre-minor metallization 22'' that extends over the entire extent of major metallization 21. This stage of the manufacturing process is shown in Figure 6e.

[0046] 6f shows the electronics module 100 after patterning, in particular after removal of a portion of the preliminary secondary metallization 22″ for the purpose of forming a secondary metallization 22 of second thickness D2, which preferably has patterning paths on the insulating layer 40 when different metal parts electrically isolated from each other by the insulating layer 40 are formed on the insulating layer 40. For example, such patterning is performed as part of a laser ablation process or as part of an etching and / or machining process.

[0047] 7a to 7e illustrate a method according to a second exemplary embodiment of the present invention. In particular, the manufacturing method of FIGS. 7a to 7e essentially differs from the method of FIGS. 6a to 6f in that, instead of applying a patterned insulating layer 40 over the entire surface and then partially removing it, the application of the insulating layer 40 to the main metallization 21 is performed only partially from the beginning using a masking 61. This advantageously avoids the removal of partial areas of the insulating layer 40 that has been applied over the entire surface. The method steps illustrated in FIGS. 7c to 7e essentially correspond to the method steps illustrated in FIGS. 6e and 6f.

[0048] 8a to 8f illustrate a method for manufacturing an electronics module 100 according to a third exemplary embodiment of the present invention. In particular, the embodiment of Figures 8a to 8f differs from the embodiment of Figures 6a to 6e in that in the subsequent metallization of the insulating layer 40, in particular in the initial minor component metallization 22' and the preliminary minor component metallization 22'' to form the minor component metallization 22 and in the multi-stage metallization described in Figures 6a to 6e, the insulating layer 40 is patterned (steps 8b and 8c) in such a way that recesses narrower than 1000 μm, in particular narrower than 500 μm, and particularly preferably narrower than 250 μm, are achieved, in particular in the direction parallel to the main extension plane HSE, and that the filling of said recesses forms or allows for through plating 26.

[0049] 9a-9f illustrate a method for manufacturing an electronics module 100 according to a fourth exemplary embodiment of the present invention. In particular, the embodiment of FIGS. 9a-9f differs from the embodiment of FIGS. 6a-6e in that, in the patterning of the metallization to form the minor metallization 22 (steps 9e and 9f), the preliminary minor metallization 22'' is patterned to form a side plating 27. The side plating 27 extends beyond the edge of the insulating layer 20 and establishes a conductive connection with the major metallization 21 below the portion of the minor metallization 22 that protrudes from the outermost edge of the insulating layer 40.

[0050] 10a-10f illustrate a method for manufacturing an electronics module 100 according to a fifth exemplary embodiment of the present invention. In particular, the embodiment of FIGS. 10a-10f differs from the embodiment of FIGS. 6a-6e in that the primary metallization 21 is patterned or provided in a patterned state. As a result, an isolation trench or gap region is formed in the primary metallization 21 between two metal portions of the primary metallization 21 arranged next to each other in a direction parallel to the primary extension plane HSE. Furthermore, the insulating layer 40 extends through the isolation trench (i.e., the insulating layer 40 covers both the metal portions of the primary metallization 21 and the isolation trench (i.e., the upper surface of the ceramic element 10), as well as, in particular, the side or etched side of the metal portions of the primary metallization 21). This allows, for example, metal portions of the primary metallization 21 arranged relatively close to each other to be effectively electrically insulated from each other. In particular, the possibility of flashover between the metal portions of the primary metallization 21 is eliminated. It is further contemplated that the secondary component metallization 22 (preferably fabricated using the initial component metallization 22' and the preliminary component metallization 22'') may be patterned to extend over the entire area of the insulating layer 40 that extends within or through the insulating trench.

[0051] 11a to 11f illustrate a method for manufacturing an electronics module 100 according to a sixth exemplary embodiment of the present invention. In particular, the embodiment of FIGS. 11a to 11f differs from the embodiment of FIGS. 6a to 6e in that the primary metallization 21 is patterned. Furthermore, the recesses or corresponding isolation trenches formed by the patterning are filled with a filling material 29. In particular, the recesses or isolation trenches are completely filled. In a subsequent metallization process, a secondary metallization 22 is formed, particularly according to the embodiment of FIGS. 6a to 6e, extending across the recesses or isolation trenches. This advantageously allows for greater design freedom in the formation of metal parts that are insulated from one another.

[0052] The embodiment of Figures 8a-11f may also be implemented using the method of the exemplary embodiment of Figures 7a-7e. [Explanation of symbols]

[0053] 1 Metal-ceramic substrate 2. Different metal-ceramic substrates 8. Wire Bonding 10 Ceramic Elements 15 Bonding layer 16 terminal lugs 20 Cooling Component Metallization 21 Main Component Metallization 22 Subcomponent Metallization 22' Initial Subcomponent Metallization 22'' Preliminary Subcomponent Metallization 23 Backside Metallization 26 Through-hole plating 27 Side plating 29 Filling material 31 First solder material 32 Second solder material 40 insulating layer 45 recess 47 Snubber 51 First Electrical Part 52 Second Electrical Parts 53 Third Electrical Parts 55 Laser light 56 Laser Source 61 Masking 100 Electronics Modules HSE main stretching plane S Stacking direction L1 First length L2 Second length L3 Third length D1 First thickness D2 Second thickness

Claims

1. An electronics module (100), in particular a power electronics module, comprising: a metal-ceramic substrate (1) which acts as a carrier and has a ceramic element (10) and a main component metallization (21), preferably a cooling component metallization (20); an insulating layer (40) connected directly or indirectly to the primary metallization (21), the primary metallization (21) of the metal-ceramic substrate (1) being at least one of unpatterned and having no patterning extending to the ceramic element (10); a secondary metallization (22) connected to the surface of the insulating layer (40) opposite the metal-ceramic substrate (1) and separated from the primary metallization (21) by the insulating layer (40); Equipped with The ceramic element (10) has a first size (L1, D1), the insulating layer (40) has a second size (L2, D2), and the ratio of the second size (L2, D2) to the first size (L1, D1) is less than 0.4, thereby forming an island-shaped insulating layer (40) on the main component metallization (21); At least one recess (45) is formed in the primary metallization (21), and the island-shaped insulating layer (40) and the secondary metallization (22) are arranged in the recess so that the primary metallization (21) and the secondary metallization (22) are flush with each other.

2. 2. The electronics module (100) of claim 1, wherein at least one first electrical component (51) is connected to the primary component metallization (21) and at least one second electrical component (52) is connected to the secondary component metallization (22), in particular connected directly adjacent to each other.

3. 3. The electronics module (100) according to claim 1, wherein the primary metallization (21) is conductively connected to the secondary metallization (22) by through plating (26) or side plating (27).

4. The electronics module (100) of any one of claims 1 to 3, wherein at least one of at least one first electrical component (51) and at least one second electrical component (52) is disposed on the secondary component metallization (22).

5. A method for manufacturing an electronic module (100) according to any one of claims 1 to 4, comprising: Providing a metal-ceramic substrate (1) having a ceramic element (10) and a main component metallization (21), preferably having a cooling component metallization (20); forming an island-shaped insulating layer (40) on the main metallization (21), wherein the ceramic element (10) has a first size (L1, D1), the insulating layer (40) has a second size (L2, D2), the formed insulating layer (40) has a second size (L2, D2), and the island-shaped insulating layer (40) formed on the main metallization (21) is dimensioned such that the ratio of the second size (L2, D2) to the first size (L1, D1) is less than 0.4; forming the secondary metallization (22) on the insulating layer (40) in the form of islands; A method comprising:

6. 6. The method of claim 5, wherein the insulating layer (40) is formed in an island shape by: a layer, in particular a continuous layer and / or a planar layer made of insulating material, is connected to said main metallization (21), said connecting layer of insulating material being patterned; an insulating material is patterned (61) on the main metallization (21) using a mask; The method of claim 1, further comprising at least one of:

7. 7. The method according to claim 5 or 6, wherein a layer of metallic material is connected to a pre-composite comprising the metal-ceramic substrate (10) and the insulating layer (40) in the form of islands, and the secondary component metallization (22) is formed by patterning the layer of metallic material connected to the pre-composite.

8. 8. The method according to claim 5, wherein at least one first component (51) is connected to the primary metallization (21) and at least one second component (52) is connected to the secondary metallization (22), The method, wherein the at least one first electrical component (51) and the secondary metallization (22) are electrically conductively connected to each other by wire bonding (8).

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