METALLIC MATERIAL, METHOD FOR MANUFACTURING METALLIC MATERIAL, METHOD FOR PASSIVATING SEMICONDUCTOR PROCESSING EQUIPMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING FILLED CONTAINER

Abstract

A metal material of the present disclosure comprises: a metal substrate; and a film disposed on the surface of the metal substrate, and containing a fluorine-containing molybdenum compound, wherein the fluorine-containing molybdenum compound is represented by general formula MoOxFy (where x is a number of 0 to 2, and y is a number of 2 to 5).

Description

[Technical Field]

[0001] The present disclosure relates to a metallic material having a coating containing a fluorine-containing molybdenum compound formed on the surface of a metallic substrate, and further relates to a method for manufacturing the metallic material, a method for passivating semiconductor processing equipment, a method for manufacturing semiconductor devices, and a method for manufacturing filled containers. [Background technology]

[0002] MoF6 is a gas used in the manufacturing process of semiconductor devices as a Mo film-forming and etching material. Non-Patent Documents 1, 2, and Patent Document 1 disclose that metallic Mo can be produced by reactions such as MoF6 + 3H2 → Mo + 6HF.

[0003] On the other hand, Patent Document 2 discloses that MoF6 can be used as an etching material in the manufacturing process of semiconductor devices. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 49-43573 [Patent Document 2] Special Publication No. 2019-502253 [Non-patent literature]

[0005] [Non-Patent Document 1] J.Electrochem.Soc.,134,8,2061(1987) [Non-patent document 2] J.Electrochem.Soc.,135,7,1832(1988) Summary of the Invention [Problem to be solved by the invention]

[0006] However, when MoF6 is used as a Mo film-forming material, the resulting Mo film sometimes has insufficient electrical conductivity. This is thought to be because particles contained in the MoF6 gas are incorporated into the Mo film, reducing the film's crystallinity and its electrical conductivity. Furthermore, when MoF6 containing particles is used as an etching material, problems such as a reduced etching rate can occur in areas where the particles adhere, raising concerns about the production of defective semiconductor devices.

[0007] To solve the above-mentioned problems, the present disclosure aims to provide MoF6 suitable for use in the manufacturing process of semiconductor devices. [Means for solving the problem]

[0008] As a result of intensive research by the present inventors, it was found that the purity of MoF6 decreases and low-order MoF6 is formed when MoF6 reacts with metals in the storage container, piping, chamber, etc. x (x is 3, 4 or 5) is generated, and MoF x It was found that particles were formed in the gas due to the high melting point of MoF. x If these particles are taken in during film formation, they will cause film formation defects, and if they adhere to the surface of a semiconductor wafer, they will cause defects in the semiconductor device.

[0009] Therefore, the surface of the metal substrate that constitutes the metal material is pretreated with MoF6 in advance, and MoO x F y By forming a film of molybdenum fluoride or molybdenum oxyfluoride, we have discovered a method to suppress the reaction between MoF6 and metals, preventing the generation of particles and further the decrease in the purity of MoF6.

[0010] The metal material of the present disclosure comprises a metal substrate and a coating formed on the surface of the metal substrate and containing a fluorine-containing molybdenum compound, the fluorine-containing molybdenum compound being represented by the general formula MoO x F y(x is a number between 0 and 2, and y is a number between 2 and 5).

[0011] In the metallic material of the present disclosure, the metallic substrate is preferably made of at least one material selected from the group consisting of stainless steel, manganese steel, aluminum, an aluminum alloy, nickel, and a nickel alloy.

[0012] In the metallic material of the present disclosure, the thickness of the coating is preferably 1 nm or more and 20 μm or less.

[0013] In the metallic material of the present disclosure, it is preferable that the metal substrate is a pipe, a storage container, or a chamber, and the coating is provided on the inner surface of the metal substrate.

[0014] In the method for producing a metal material of the present disclosure, a surface of a metal substrate is exposed to a gas containing MoF6 at a temperature of 300°C or less, thereby forming a coating containing a fluorine-containing molybdenum compound on the surface of the metal substrate.

[0015] In the method for producing a metallic material of the present disclosure, the concentration of MoF6 in the gas is preferably 5% by volume or more and 100% by volume or less.

[0016] The disclosed method for passivating a semiconductor processing apparatus includes a chamber made of a metal material and a pipe connected to the chamber, and the inner surfaces of the chamber and the pipe are exposed to a gas containing MoF6 at a temperature of 300°C or less, thereby forming a film containing a fluorine-containing molybdenum compound on the inner surface of the chamber.

[0017] In the passivation method for semiconductor processing equipment of the present disclosure, it is preferable that the pipe is made of a metal material and the coating is also formed on the inner surface of the pipe.

[0018] The method for manufacturing a semiconductor device according to the present disclosure includes the steps of: performing the passivation method for the semiconductor processing apparatus; and flowing a gas containing MoF6 through the semiconductor processing apparatus.

[0019] The method for manufacturing a filled container of the present disclosure includes the steps of forming a coating containing a fluorine-containing molybdenum compound on the inner surface of a storage container made of a metal material by exposing the inner surface of the storage container to a gas containing MoF6 at a temperature of 300°C or less, and filling the storage container with a gas containing MoF6. [Effects of the Invention]

[0020] According to the present disclosure, MoF6 suitable for use in the manufacturing process of semiconductor devices can be provided. [Brief explanation of the drawings]

[0021] [Figure 1] FIG. 1 is a schematic diagram showing an example of a semiconductor processing apparatus used in the examples and comparative examples. DETAILED DESCRIPTION OF THE INVENTION

[0022] The present disclosure will be described below. However, the present disclosure is not limited to the following configurations, and can be appropriately modified and applied within the scope of the gist of the present disclosure.

[0023] [Metal materials] The metal material of the present disclosure includes a metal substrate and a coating provided on the surface of the metal substrate and containing a fluorine-containing molybdenum compound.

[0024] In the metallic material of the present disclosure, the coating containing the fluorine-containing molybdenum compound is provided on the surface of the metal substrate, thereby suppressing the reaction between MoF6 and the metal, thereby preventing the generation of particles and the decrease in the purity of MoF6.

[0025] The metal substrate is, for example, a pipe, a storage container, a chamber, etc. In this case, the coating containing the fluorine-containing molybdenum compound is provided on the inner surface of the metal substrate.

[0026] Examples of materials constituting the metal substrate include metals such as stainless steel, manganese steel, aluminum, aluminum alloys, nickel, nickel alloys, etc. The metal substrate is preferably made of stainless steel or manganese steel.

[0027] As the stainless steel, for example, martensitic stainless steel, ferritic stainless steel, austenitic stainless steel, and other stainless steels can be used, with SUS304, SUS304L, SUS316, and SUS316L being particularly preferred.

[0028] As manganese steel, for example, SMn420, SMn433, SMn438, SMn443 specified in JIS G 4053:2016, or STH11, STH12 specified in JIS G 3429:2013, etc. can be used.

[0029] As the aluminum alloy, for example, an alloy of aluminum with copper, manganese, silicon, magnesium, zinc, nickel, etc. can be used.

[0030] As the nickel alloy, for example, Hastelloy, Inconel, etc. can be used.

[0031] The surface of the metal substrate before the coating is provided may be subjected to a mirror finish, if necessary.

[0032] The fluorine-containing molybdenum compound contained in the coating has the general formula MoO x F y (x is a number from 0 to 2, and y is a number from 2 to 5). When x is 0, the fluorine-containing molybdenum compound is a molybdenum fluoride, and when x is other than 0, the fluorine-containing molybdenum compound is a molybdenum oxyfluoride.

[0033] The composition of fluorine-containing molybdenum compounds can be confirmed by X-ray photoelectron spectroscopy (XPS). For example, by irradiating a sample with soft X-rays such as MgKα (1253.6 eV) or AlKα (1486.6 eV) and measuring the kinetic energy of the photoelectrons emitted from the sample surface, information can be obtained about the types, abundances, and chemical bonding states of the elements that make up the sample surface.

[0034] The thickness of the coating is preferably 1 nm or more, more preferably 5 nm or more, while the thickness of the coating is preferably 20 μm or less, more preferably 5 μm or less, and even more preferably 1 μm or less.

[0035] The thickness of the film can be measured by depth analysis using a combination of XPS and argon ion beam etching.

[0036] The film containing the fluorine-containing molybdenum compound is formed, for example, by exposing the surface of the metal substrate to a gas containing MoF6, as will be explained later in the section "Method for producing a metal material."

[0037] [Metal material manufacturing methods] In the method for producing a metal material of the present disclosure, a surface of a metal substrate is exposed to a gas containing MoF6 at a temperature of 300°C or less, thereby forming a coating containing a fluorine-containing molybdenum compound on the surface of the metal substrate.

[0038] In the method for producing a metallic material according to the present disclosure, a film containing a fluorine-containing molybdenum compound is formed on the surface of a metallic substrate, thereby suppressing the reaction between MoF6 and the metal, thereby preventing the generation of particles and the decrease in the purity of MoF6.

[0039] First, a metal substrate is prepared, such as a pipe, a storage container, a chamber, etc. In this case, a film containing a fluorine-containing molybdenum compound is formed on the inner surface of the metal substrate.

[0040] The metal substrate may be made of any of the metals described in [Metallic Materials]. The metal substrate is preferably made of stainless steel.

[0041] In the method for producing a metal material according to the present disclosure, the surface of the metal substrate may be subjected to a mirror finish, such as electrolytic polishing, if necessary. For metal substrates such as pipes used in semiconductor manufacturing equipment, it is desirable to perform a mirror finish on the surface. By performing a mirror finish on the surface of the metal substrate, surface irregularities can be eliminated, allowing a coating containing a fluorine-containing molybdenum compound to be formed uniformly. Furthermore, eliminating the irregularities reduces the surface area of the metal substrate, thereby reducing the amount of MoF6 required to form the coating. Note that if mirror finish on the surface of the metal substrate is not required, this step need not be performed.

[0042] Next, after the surface of the metal substrate is thoroughly dried, the surface of the metal substrate is exposed to a gas containing MoF6, thereby forming a film containing a fluorine-containing molybdenum compound on the surface of the metal substrate.

[0043] The coating containing the fluorine-containing molybdenum compound has been explained in [Metallic Materials], so it will not be explained here.

[0044] By increasing the temperature during exposure to a gas containing MoF6, a coating containing a fluorine-containing molybdenum compound can be rapidly formed. However, if the temperature is too high, the metal substrate may corrode and generate particles. Therefore, the temperature during exposure to a gas containing MoF6 is preferably 300°C or less, more preferably 200°C or less, and even more preferably 150°C or less. On the other hand, the temperature during exposure to a gas containing MoF6 is, for example, 0°C or more, preferably 20°C or more, and even more preferably 40°C or more.

[0045] The gas to which the surface of the metal substrate is exposed may be a gas containing 100% by volume of MoF6, or may be a gas in which MoF6 is diluted with an inert gas such as nitrogen or argon.

[0046] The concentration of MoF6 in the gas to which the surface of the metal substrate is exposed is not particularly limited, but the higher the MoF6 concentration, the more rapidly a film containing a fluorine-containing molybdenum compound can be formed. Also, the higher the MoF6 concentration, the more stably and strongly a film containing a fluorine-containing molybdenum compound can be formed. Therefore, the concentration of MoF6 in the gas is preferably 100% by volume.

[0047] On the other hand, if the concentration of MoF6 is too low, the rate at which the film containing the fluorine-containing molybdenum compound is formed will be slow, and the time required for the film to form will be long, making it difficult to form the film efficiently. Therefore, the concentration of MoF6 in the gas is preferably 5% by volume or more.

[0048] The pressure during exposure to the gas containing MoF6 is not particularly limited, but can be set appropriately within the range of, for example, 10 kPa or more and 1 MPa or less. Note that atmospheric pressure may also be used.

[0049] The time for exposure to the gas containing MoF6 is not particularly limited, but can be set appropriately within the range of, for example, 1 minute to 72 hours.

[0050] A method for exposing the surface of a metal substrate to MoF6 includes, for example, confining a gas containing MoF6 inside a pipe, storage container, or chamber where the metal substrate is a pipe, storage container, or chamber. By confining a gas containing MoF6, a coating containing a fluorine-containing molybdenum compound can be efficiently formed. This method is also preferable because it does not require an excessive amount of MoF6.

[0051] On the other hand, when the gas containing MoF6 cannot be contained, the surface of the metal substrate can be exposed to MoF6 by passing the gas containing MoF6 over the surface of the metal substrate. In this case, it is preferable to heat the gas containing MoF6 to a predetermined temperature in advance.

[0052] [Method for passivating semiconductor processing equipment] The disclosed method for passivating a semiconductor processing apparatus includes a chamber made of a metal material and a pipe connected to the chamber, and the inner surfaces of the chamber and the pipe are exposed to a gas containing MoF6 at a temperature of 300°C or less, thereby forming a film containing a fluorine-containing molybdenum compound on the inner surface of the chamber.

[0053] In the passivation method for semiconductor processing equipment of the present disclosure, it is preferable that the pipe is made of a metal material and the coating is also formed on the inner surface of the pipe.

[0054] In the passivation method for semiconductor processing equipment of the present disclosure, a film containing a fluorine-containing molybdenum compound is formed on the inner surface of a chamber or the inner surface of a pipe, thereby suppressing the reaction between MoF6 and metals, thereby preventing particle generation in the semiconductor processing equipment and further preventing a decrease in the purity of MoF6.

[0055] In the passivation method for semiconductor processing equipment of the present disclosure, the chamber is preferably made of a metal described in [Metallic Material], and is preferably made of stainless steel.

[0056] In the passivation method for semiconductor processing equipment of the present disclosure, when the piping is made of a metal material, it is preferable that the piping be made of a metal described in [Metallic Material]. In this case, the metal constituting the chamber and the metal constituting the piping may be the same or different.

[0057] In the passivation method for semiconductor processing equipment of the present disclosure, the piping may be made of a resin material, such as fluororesins such as PFA (perfluoroalkoxyalkane), PCTFE (polychlorotrifluoroethylene), and PTFE (polytetrafluoroethylene).

[0058] In the passivation method for semiconductor processing equipment of the present disclosure, the preferred conditions for exposure to a gas containing MoF6 are the same as those in the [Method for producing a metal material].

[0059] [Semiconductor device manufacturing method] The method for manufacturing a semiconductor device according to the present disclosure includes the steps of: performing the passivation method for the semiconductor processing apparatus; and flowing a gas containing MoF6 through the semiconductor processing apparatus.

[0060] The gas circulated through the semiconductor processing equipment may be a gas containing 100% by volume of MoF6, or a gas in which MoF6 is diluted with an inert gas such as nitrogen or argon. The gas circulated through the semiconductor processing equipment may be the same as or different from the gas to which the inner surface of the chamber is exposed.

[0061] By passing a gas containing MoF6 through a semiconductor processing equipment, for example, a Mo film can be formed on a substrate. Alternatively, by passing a gas containing MoF6 through a semiconductor processing equipment, for example, at least a portion of a layer such as an oxide film can be etched from a substrate on which the layer is formed. By performing these processes, a semiconductor device can be manufactured.

[0062] [Manufacturing method of filled containers] The method for manufacturing a filled container of the present disclosure includes the steps of forming a coating containing a fluorine-containing molybdenum compound on the inner surface of a storage container made of a metal material by exposing the inner surface of the storage container to a gas containing MoF6 at a temperature of 300°C or less, and filling the storage container with a gas containing MoF6.

[0063] In the method for manufacturing a filled container according to the present disclosure, a film containing a fluorine-containing molybdenum compound is formed on the inner surface of the storage container, thereby suppressing the reaction between MoF6 and metals, thereby preventing particle generation in the storage container and a decrease in the purity of MoF6.

[0064] In the method of manufacturing a filled container of the present disclosure, the storage container is preferably made of a metal as described in [Metallic Material]. The storage container is preferably made of stainless steel.

[0065] In the method for producing a filled container according to the present disclosure, the preferred conditions for exposure to a gas containing MoF6 are the same as those in the [Method for producing a metal material].

[0066] The gas filled into the storage container may be a gas containing 100% by volume of MoF6, or a gas in which MoF6 is diluted with an inert gas such as nitrogen or argon. The gas filled into the storage container may be the same as or different from the gas to which the inner surface of the storage container is exposed. [Example]

[0067] Examples that more specifically disclose the present disclosure are given below, but the present disclosure is not limited to these examples.

[0068] FIG. 1 is a schematic diagram showing an example of a semiconductor processing apparatus used in the examples and comparative examples.

[0069] 1 includes a chamber 10 and a pipe 20 connected to the chamber 10. The chamber 10 includes a stage 12 on which a thermally oxidized SiO2 wafer 11 is placed.

[0070] A storage container 30 filled with MoF6 gas is connected to the pipe 20. The MoF6 gas can be supplied to the chamber 10 by opening the valves V1 and V2.

[0071] A pipe 21 extending from an inert gas supplier 40 is connected between the valves V1 and V2. An inert gas can be supplied to the chamber 10 by opening the valves V2 and V3.

[0072] In chamber 10, means for discharging gas are provided. In FIG. 1, the gas is discharged from chamber 10 through pipe 22 by vacuum device 50. A valve V4 is provided in pipe 22 to adjust the pressure. Also, a pressure gauge PI is installed inside chamber 10.

[0073] [Example 1] In Example 1, chamber 10 and pipes 20 - 22 made of resin (PFA) were used, and storage container 30 made of stainless steel (SUS304) was used. The following pre - treatment was performed on storage container 30.

[0074] [Pre - treatment of storage container] 1. Storage container 30 was heated to 40°C, the inside of the container was replaced with inert gas (N2 / He), and then storage container 30 was evacuated.

[0075] 2. 50 kPa of 100% by volume MoF6 gas was introduced into storage container 30 and held for 24 hours.

[0076] 3. The MoF6 gas inside storage container 30 was evacuated.

[0077] When XPS analysis was performed on a test piece (a metal piece obtained by cutting SUS304 into 20 mm×20 mm) surface - treated under the same conditions as above, molybdenum and fluorine were detected on the surface, and it was confirmed that a film containing a fluorine - containing molybdenum compound was formed on the surface of the test piece. Also, etching using an argon ion beam was performed and depth analysis by XPS was carried out. As a result, the film thickness was about 85 nm.

[0078] [MoF6 flow test] The pre - treated storage container 30 was filled with 100% by volume MoF6 gas. Then, the MoF6 flow test was performed under the following conditions.

[0079] 1. The thermal oxidation SiO2 wafer 11 was placed on stage 12 inside chamber 10. The temperature of stage 12 was set to 100°C.

[0080] 2. Valves V1, V2 and V4 were opened, and the chamber 10 was evacuated by the vacuum device 50.

[0081] 3. MoF6 gas was circulated at 100 sccm from the storage container 30. At this time, the opening of the valve V4 was adjusted so that the pressure indicated by the pressure gauge PI in the chamber 10 was 10 kPa.

[0082] 4. After the MoF6 gas was passed through for 10 minutes, the atmosphere in the chamber 10 was replaced with an inert gas.

[0083] 5. The thermally oxidized SiO2 wafer 11 was removed from the chamber 10.

[0084] <Evaluation> Using a scanning electron microscope (SEM), the surface of the thermally oxidized SiO2 wafer 11 after the MoF6 flow test was observed, and the number of particles (diameter 100 nm or more) adhering to the surface of the wafer was counted.

[0085] [Comparative Example 1] A MoF6 flow test was carried out in the same manner as in Example 1, except that 100% by volume MoF6 gas was filled into a storage container 30 that had not been pretreated, and the number of particles adhering to the surface of the wafer was counted.

[0086] [Example 2] In Example 2, the chamber 10, pipes 20 to 22, and storage container 30 were made of stainless steel (SUS304). The storage container 30 was pretreated under the same conditions as in Example 1. Furthermore, the chamber 10 and pipe 20 were pretreated under the following conditions. Thereafter,

[0087] <Pretreatment of chambers and piping> 1. The chamber 10 and the pipe 20 were heated to 150°C, and the inside of the chamber 10 and the pipe 20 was replaced with an inert gas (N2 / He), and then evacuated.

[0088] 2. MoF6 gas was introduced into the chamber 10 and the piping 20 at 50 kPa and maintained for 24 hours.

[0089] 3. The MoF6 gas in the chamber 10 and the pipe 20 was evacuated.

[0090] When XPS analysis was performed on a test piece (a metal piece cut into 20mm x 20mm pieces of SUS304) that had been surface treated under the same conditions as above, molybdenum and fluorine were detected on the surface, confirming that a film containing a fluorine-containing molybdenum compound had formed on the surface of the test piece. In addition, etching was performed using an argon ion beam, and XPS depth analysis revealed that the thickness of the film was approximately 10nm.

[0091] <Evaluation> The pretreated storage container 30 was filled with 100% by volume of MoF gas. Thereafter, using the pretreated chamber 10 and piping 20, a MoF flow test was carried out under the same conditions as in Example 1, and the number of particles adhering to the surface of the wafer was counted.

[0092] Comparative Example 2 A MoF6 flow test was carried out in the same manner as in Example 2, except that the chamber 10 and the piping 20 were not pretreated, and the number of particles adhering to the wafer surface was counted.

[0093] Comparative Example 3 A MoF6 flow test was carried out in the same manner as in Example 2, except that the chamber 10 and the pipe 20 were heated to 400° C. when pre-treatment was carried out, and the number of particles adhering to the wafer surface was counted.

[0094] Table 1 shows the pretreatment conditions and evaluation results.

[0095] [Table 1]

[0096] From Example 1 and Comparative Example 1, it can be seen that the generation of particles can be suppressed by performing pretreatment using MoF6 on the storage container 30 made of stainless steel.

[0097] From Example 2 and Comparative Example 2, it is found that even for the chamber 10 and the piping 20 made of stainless steel, the generation of particles can be suppressed by performing pretreatment using MoF6.

[0098] In Comparative Example 3, the stainless steel was corroded by the pretreatment with MoF6 at 400°C, and particles were generated.

[0099] This application claims priority under the Paris Convention or the laws of countries that have adopted it, based on Japanese Patent Application No. 2020-000352 filed on January 6, 2020. The contents of that application are incorporated herein by reference in their entirety. [Explanation of symbols]

[0100] 1. Semiconductor processing equipment 10 chambers 11 Thermally oxidized SiO2 wafer 12 stages 20, 21, 22 Piping 30 storage container 40 Inert gas supply 50 Vacuum equipment PI pressure gauge V1, V2, V3, V4 valves

Claims

1. A metal substrate; a coating provided on the surface of the metal substrate and containing a fluorine-containing molybdenum compound, The fluorine-containing molybdenum compound is represented by the general formula MoO ｘ F ｙ (x is a number from 0 to 2, y is a number from 2 to 5), and the thickness of the coating is 1 nm or more and 20 μm or less.

2. 2. The metal material for use in the manufacturing process of semiconductor devices according to claim 1, wherein the metal substrate is made of at least one material selected from the group consisting of stainless steel, manganese steel, aluminum, an aluminum alloy, nickel, and a nickel alloy.

3. the metal substrate is a pipe, a storage vessel, or a chamber; 3. The metal material for use in the manufacturing process of semiconductor devices according to claim 1, wherein the coating is provided on the inner surface of the metal substrate.

4. The surface of the metal substrate is treated with MoF at a temperature of 300°C or less. ６ a coating containing a fluorine-containing molybdenum compound is formed on the surface of the metal substrate by exposing the metal substrate to a gas containing the compound, the coating having a thickness of 1 nm to 20 μm, and the fluorine-containing molybdenum compound is represented by the general formula MoO x F y (x is a number from 0 to 2, and y is a number from 2 to 5).

5. MoF in the gas ６ 5. The method for producing a metal material for use in the manufacturing process of semiconductor devices according to claim 4, wherein the concentration of is 5% by volume or more and 100% by volume or less.

6. A passivation method for a semiconductor processing apparatus including a chamber made of a metal material and a pipe connected to the chamber, comprising: The inner surfaces of the chamber and the piping are treated with MoF at a temperature of 300°C or less. ６ a coating containing a fluorine-containing molybdenum compound is formed on the inner surface of the chamber by exposing the chamber to a gas containing the compound, the coating having a thickness of 1 nm to 20 μm, and the fluorine-containing molybdenum compound is represented by the general formula MoO x F y (x is an integer of 0 to 2, and y is an integer of 2 to 5).

7. The piping is made of a metal material, 7. The method for passivating a semiconductor processing apparatus according to claim 6, wherein the coating is also formed on the inner surface of the pipe.

8. A step of performing the passivation method for semiconductor processing equipment according to claim 6 or 7; The semiconductor processing equipment includes: MoF ６ and passing a gas containing the compound.

9. The inner surface of a storage container for semiconductor device manufacturing processes, which is made of a metal material, is coated with MoF ６ forming a film containing a fluorine-containing molybdenum compound on the inner surface of the storage container by exposing the storage container to a gas containing The storage container contains MoF ６ and filling the container with a gas containing the compound, wherein the coating has a thickness of 1 nm or more and 20 μm or less, and the fluorine-containing molybdenum compound is represented by the general formula MoO x F y (x is a number from 0 to 2, and y is a number from 2 to 5).

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