Temperature measurement unit, heat treatment device and temperature measurement method

Abstract

To provide a temperature measurement unit capable of simulatively measuring a temperature of a substrate when heated by a hot plate having a high temperature, a substrate processing device and a temperature measurement method.SOLUTION: A temperature measurement unit includes a measuring substrate with a sensor for measuring a temperature mounted, an information processing part for acquiring a detection result by the sensor, and a cable for connecting the sensor and the information processing part. The information processing part is configured to be freely detachably attached to a part to be attached facing a heating area provided with a hot plate, the cable is configured to move the substrate support member with the measuring substrate mounted from a non-heating area located outside the heating area to the heating area in a state with the information processing part attached to the part to be attached, and be able to follow the movement of the measuring substrate in mounting the measuring substrate on the hot plate.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present disclosure relates to a temperature measurement unit, a heat treatment apparatus, and a temperature measurement method. [Background technology]

[0002] Patent document 1 discloses a processing unit that performs a predetermined process on a substrate, a storage unit that stores a temperature-measuring substrate equipped with a temperature sensor and a memory unit that accumulates temperature measurement data measured by the temperature sensor and collects the temperature measurement data accumulated in the memory unit of the temperature-measuring substrate, a transport means that transports the substrate between the storage unit and the processing unit, and a temperature control means that controls a temperature adjustment mechanism related to the predetermined process based on the temperature measurement data collected from the temperature-measuring substrate transported to the storage unit via the processing unit so that the temperature state of the predetermined process becomes a predetermined temperature state. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-157896 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure provides a temperature measurement unit, a substrate processing apparatus, and a temperature measurement method that are capable of simulating and measuring the temperature of a substrate when heated by a high-temperature hot plate. [Means for solving the problem]

[0005] One aspect of the present disclosure is a temperature measurement unit comprising: a measurement substrate having a sensor mounted thereon for measuring temperature; an information processing unit that acquires the detection results of the sensor; and a cable that connects the sensor and the information processing unit; wherein the information processing unit is configured to be detachably attached to a mounting portion that faces a heated region where a hot plate is provided; and the cable is configured to be able to follow the movement of the measurement substrate when, with the information processing unit attached to the mounting portion, a substrate support member on which the measurement substrate is placed is moved from a non-heated region located outside the heated region to the heated region and the measurement substrate is placed on the hot plate. The information processing unit is configured to be fixed in the non-heating area at a position where the attached portion is sandwiched between the information processing unit and the measurement substrate, which is located in a removable position away from the heating area. are. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to provide a temperature measurement unit, a substrate processing apparatus, and a temperature measurement method that are capable of simulating and measuring the temperature of a substrate when heated by a high-temperature hot plate. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is an explanatory diagram showing an outline of the internal configuration of a wafer processing system equipped with a heat treatment device that performs heat treatment on wafers; [Figure 2] FIG. 2 is a diagram schematically illustrating an outline of the internal configuration of the front side of the wafer processing system. [Figure 3] FIG. 2 is a diagram schematically illustrating an outline of the internal configuration of the rear side of the wafer processing system. [Figure 4] 1 is a longitudinal sectional view schematically illustrating an outline of the configuration of a heat treatment apparatus. [Figure 5] 1 is a cross-sectional view schematically illustrating the configuration of a heat treatment apparatus. [Figure 6] FIG. 2 is a side view showing an outline of an example of a temperature measurement unit. [Figure 7] FIG. 2 is a plan view showing an outline of an example of a temperature measurement unit. [Figure 8] 10A to 10C are diagrams showing the state of the temperature measurement unit in some steps of a temperature measurement method. [Figure 9]10A to 10C are diagrams showing the state of the temperature measurement unit in some steps of a temperature measurement method. [Figure 10] 10A to 10C are diagrams showing the state of the temperature measurement unit in some steps of a temperature measurement method. [Figure 11] FIG. 10 is a side view showing an outline of another example of the temperature measurement unit. [Figure 12] FIG. 10 is a plan view showing an outline of another example of the temperature measurement unit. [Figure 13] 13A and 13B are diagrams for explaining the effect of the temperature measuring unit in the examples of FIGS. 11 and 12. FIG. [Figure 14] 13A and 13B are diagrams for explaining the effect of the temperature measuring unit in the examples of FIGS. 11 and 12. FIG. [Figure 15] 13A and 13B are diagrams for explaining the effect of the temperature measuring unit in the examples of FIGS. 11 and 12. FIG. [Figure 16] 13A and 13B are diagrams for explaining the effect of the temperature measuring unit in the examples of FIGS. 11 and 12. FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the manufacturing process of semiconductor devices, etc., predetermined processes are performed to form a resist pattern on a semiconductor wafer (hereinafter referred to as "wafer"). The predetermined processes include, for example, a resist coating process in which a resist solution is supplied onto the wafer to form a resist film, an exposure process in which the resist film is exposed to light, a PEB (Post Exposure Bake) process in which heating is performed after exposure to promote a chemical reaction in the resist film, and a development process in which the exposed resist film is developed.

[0009] The heat treatment such as the PEB treatment described above is usually performed in a heat treatment apparatus having a heating plate on which a wafer is placed and which heats the wafer. The heat treatment using this heat treatment apparatus is performed, for example, so that the temperature of the wafer is uniform across the wafer, in order to make the dimensions of the resist pattern uniform across the wafer.

[0010] As described above, in order to achieve uniform heating of the wafer surface by heat treatment in a heat treatment apparatus, conventionally, the temperature of the wafer when heated by a hot plate is simulated in advance and the amount of heat applied by the hot plate is corrected based on the results.

[0011] One technique for simulating the temperature of a wafer when heated by a hot plate is to use a temperature measurement wafer equipped with multiple temperature sensors and a memory (see Patent Document 1). In this technique, the temperature measurement wafer is heated by a hot plate in the same way as a normal wafer, and its temperature is measured by each temperature sensor and stored in memory as temperature measurement data.

[0012] Incidentally, there are cases where a hot plate is heated to a high temperature, for example, 250°C or higher, and a wafer is heated by this hot plate. In this case, if a temperature measurement wafer such as that disclosed in Patent Document 1 is used, the memory may break down due to exposure to a high temperature environment. If this breaks down, the temperature measurement data stored in the memory cannot be used, and it is as if the temperature cannot be measured at all.

[0013] Therefore, the technology according to the present disclosure provides a temperature measurement unit, a substrate processing apparatus, and a temperature measurement method that are capable of simulating and measuring the temperature of a substrate when heated by a high-temperature hot plate.

[0014] Hereinafter, a temperature measurement unit, a heat treatment apparatus, and a temperature measurement method according to the present embodiment will be described with reference to the drawings. In this specification, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0015] <Wafer processing system> FIG. 1 is an explanatory diagram showing an outline of the internal configuration of a wafer processing system 1 equipped with a heat treatment device that performs heat treatment on wafers. FIGS. 2 and 3 are diagrams that respectively show an outline of the internal configuration on the front side and rear side of the wafer processing system 1. In the following example, the wafer processing system 1 is a coating and developing processing system that performs coating and developing processing on wafers W.

[0016] 1, the wafer processing system 1 includes a cassette station 10 into which a cassette C containing a plurality of wafers W is loaded and unloaded, and a processing station 11 equipped with a plurality of various processing devices that perform predetermined processing on the wafers W. The wafer processing system 1 has a configuration in which the cassette station 10, the processing station 11, and an interface station 13 that transfers the wafers W between the processing station 11 and an exposure device 12 adjacent to the processing station 11 are integrally connected.

[0017] The cassette station 10 is provided with a cassette mounting table 20. The cassette mounting table 20 is provided with a plurality of cassette mounting plates 21 on which the cassettes C are placed when the cassettes C are carried in and out of the wafer processing system 1.

[0018] The cassette station 10 is provided with a wafer transfer device 23 that is movable on a transfer path 22 extending in the X direction. The wafer transfer device 23 is also movable in the vertical direction and around the vertical axis (the θ direction), and can transfer wafers W between the cassettes C on each cassette mounting plate 21 and a transfer device in the third block G3 of the processing station 11, which will be described later.

[0019] The processing station 11 is provided with multiple blocks, for example, four blocks G1, G2, G3, and G4, each equipped with various devices. For example, a first block G1 is provided on the front side of the processing station 11 (the negative X-direction side in FIG. 1), and a second block G2 is provided on the back side of the processing station 11 (the positive X-direction side in FIG. 1). Furthermore, a third block G3 is provided on the cassette station 10 side of the processing station 11 (the negative Y-direction side in FIG. 1), and a fourth block G4 is provided on the interface station 13 side of the processing station 11 (the positive Y-direction side in FIG. 1).

[0020] 2, the first block G1 has a plurality of liquid processing apparatuses, such as a developing apparatus 30, a lower anti-reflection coating forming apparatus 31, a resist coating apparatus 32, and an upper anti-reflection coating forming apparatus 33, arranged in this order from bottom to top. The developing apparatus 30 develops the wafer W, and the lower anti-reflection coating forming apparatus 31 forms an anti-reflection coating (hereinafter referred to as a "lower anti-reflection coating") on the lower layer of the resist film on the wafer W. The resist coating apparatus 32 applies a resist liquid to the wafer W to form a resist film, and the upper anti-reflection coating forming apparatus 33 forms an anti-reflection coating (hereinafter referred to as an "upper anti-reflection coating") on the upper layer of the resist film on the wafer W.

[0021] For example, three developing treatment devices 30, three lower anti-reflection coating forming devices 31, three resist coating devices 32, and three upper anti-reflection coating forming devices 33 are arranged horizontally. The number and arrangement of these developing treatment devices 30, three lower anti-reflection coating forming devices 31, three resist coating devices 32, and three upper anti-reflection coating forming devices 33 can be selected arbitrarily.

[0022] In the developing treatment device 30, the lower anti-reflection coating forming device 31, the resist coating device 32, and the upper anti-reflection coating forming device 33, a predetermined treatment liquid is supplied onto the wafer W by, for example, spin coating. In the spin coating method, the treatment liquid is discharged onto the wafer W from, for example, a discharge nozzle, and the wafer W is rotated to diffuse the treatment liquid over the surface of the wafer W.

[0023] 3, the second block G2 is provided with a heat treatment device 40 that performs heat treatment such as heating and cooling of the wafer W, an adhesion device 41 that improves the fixation of the resist liquid to the wafer W, and an edge exposure device 42 that exposes the outer periphery of the wafer W. These heat treatment devices 40, adhesion devices 41, and edge exposure devices 42 are arranged vertically and horizontally, and the number and arrangement thereof can be selected as desired.

[0024] For example, in the third block G3, a plurality of transfer devices 50, 51, 52, 53, 54, and 55 are provided in this order from the bottom up, and in the fourth block G4, a plurality of transfer devices 60, 61, and 62 are provided in this order from the bottom up.

[0025] 1, a wafer transfer area D serving as a substrate transfer area is formed in an area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a wafer transfer device 70 serving as a substrate transfer device is disposed.

[0026] The wafer transfer device 70 has a transfer arm 70a that is movable in, for example, the Y direction, the X direction, the θ direction, and the up-down direction. The wafer transfer device 70 moves within the wafer transfer region D and can transfer the wafer W to predetermined devices in the surrounding first block G1, second block G2, third block G3, and fourth block G4. For example, as shown in FIG. 3, a plurality of wafer transfer devices 70 are arranged one above the other, and can transfer the wafer W to predetermined devices at approximately the same height in each of the blocks G1 to G4.

[0027] In addition, the wafer transfer region D is provided with a shuttle transfer device 80 that transfers the wafer W linearly between the third block G3 and the fourth block G4.

[0028] Shuttle transfer device 80 is movable linearly, for example, in the Y direction in Fig. 3. Shuttle transfer device 80 moves in the Y direction while supporting a wafer W, and can transfer the wafer W between delivery device 52 in the third block G3 and delivery device 62 in the fourth block G4.

[0029] 1, a wafer transfer device 90 is provided adjacent to the third block G3 on the positive side in the X direction. The wafer transfer device 90 has a transfer arm 90a that is movable in, for example, the X direction, the θ direction, and the up-and-down direction. The wafer transfer device 90 moves up and down while supporting a wafer W, and can transfer the wafer W to each delivery device in the third block G3.

[0030] The interface station 13 is provided with a wafer transfer device 100 and a delivery device 101. The wafer transfer device 100 has a transfer arm 100a that is movable in, for example, the Y direction, the θ direction, and the up and down direction. The wafer transfer device 100 supports a wafer W on, for example, the transfer arm 100a, and can transfer the wafer W between each delivery device in the fourth block G4, the delivery device 101, and the exposure device 12.

[0031] The wafer processing system 1 described above is provided with a control device U as shown in FIG. 1. The control device U is configured, for example, by a computer equipped with a CPU, memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling wafer processing in the wafer processing system 1 and a program for automatically adjusting the amount of heat applied to a heating plate (described later) by a heater (described later) based on the measurement results of the temperature of a measurement wafer (described later). Note that the above programs may be recorded on a computer-readable storage medium and installed into the control device U from the storage medium. Some or all of the programs may be implemented by dedicated hardware (circuit board).

[0032] <Heat treatment equipment> Next, the configuration of the heat treatment device 40 will be described. Fig. 4 is a longitudinal sectional view that schematically shows the outline of the configuration of the heat treatment device 40. Fig. 5 is a transverse sectional view that schematically shows the outline of the configuration of the heat treatment device 40.

[0033] 4 and 5, the heat treatment apparatus 40 has a housing 120 whose interior can be closed. A loading / unloading opening 121 for the wafer W is provided on the side of the housing 120 on the wafer transfer region D side (negative side in the X direction). The loading / unloading opening 121 is provided to face an opening F1 formed in a partition wall F serving as a support member. The partition wall F surrounds the wafer transfer region D and supports the heat treatment apparatus 40, the adhesion device 41, etc. An opening / closing shutter (not shown) is provided at the loading / unloading opening 121.

[0034] Heat treatment apparatus 40 also has, within housing 120, a heating region 122 for heating wafers W and a cooling region 123 for cooling wafers W. Heating region 122 is provided on the opposite side (positive side in the X direction) from wafer transfer region D, and cooling region 123 is adjacent to heating region 122 and provided on the wafer transfer region D side (negative side in the X direction).

[0035] As shown in FIG. 4, the heating region 122 has a vertically movable lid 130 provided on the upper side, and a hot plate accommodating portion 131 that forms a processing chamber S together with the lid 130 provided on the lower side.

[0036] The lid 130 has a cylindrical shape with an open bottom surface, and covers the top surface of the wafer W placed on a heating plate 132 (described later). An exhaust section 130a is provided in the center of the top surface of the lid 130. The atmosphere inside the processing chamber S is exhausted from the exhaust section 130a.

[0037] A hot plate 132 is provided in the center of the hot plate accommodation section 131, on which a wafer W is placed and which heats the placed wafer W. The hot plate 132 has a thick, disk-like shape, and a heater 140 is provided inside the hot plate 132. The heater 140 heats the hot plate 132, specifically, the upper surface of the hot plate 132, i.e., the surface on which the wafer W is placed. For example, a resistance heater is used as the heater 140. Furthermore, for example, the upper surface of the hot plate 132 is divided into multiple regions, and the heater 140 is provided in each region, and the amount of heat generated by the heater 140 can be adjusted for each region, thereby adjusting each region to a predetermined set temperature.

[0038] The hot plate accommodating section 131 is provided with lifting pins 141 that penetrate the hot plate 132 in the thickness direction. The lifting pins 141 can be raised and lowered by a lifting drive section 142 such as a cylinder, and can protrude from the upper surface of the hot plate 132 to transfer the wafer W to and from a cooling plate 160, which will be described later.

[0039] The hot plate accommodating section 131 has, for example, as shown in FIG. 4, an annular holding member 150 that accommodates the hot plate 132 and holds the outer periphery of the hot plate 132, and a cylindrical support ring 151 that surrounds the outer periphery of the holding member 150.

[0040] The cooling region 123 is provided with a cooling plate 160 on which a wafer W is placed and which cools the placed wafer W. The cooling plate 160 has, for example, a substantially rectangular flat plate shape in a plan view, and the end face on the heating region 122 side (the positive side in the X direction) is curved in an arc shape. A cooling mechanism such as a refrigerant flow path through which a refrigerant such as cooling water flows is formed inside the cooling plate 160, and the cooling plate 160 can be adjusted to a predetermined set temperature.

[0041] 4, the cooling plate 160 is supported by a support arm 161, which is attached to a rail 162 extending in the X direction on the heating region 122 side. The cooling plate 160 can be moved on the rail 162 by a drive mechanism 163 attached to the support arm 161. This allows the cooling plate 160 to move to above the heating plate 132 on the heating region 122 side.

[0042] The cooling plate 160 has two slits 164 formed therein, for example, along the direction of movement of the cooling plate 160 (the X direction in FIG. 5 ). The slits 164 are formed from the end surface of the cooling plate 160 on the heating region 122 side to near the center of the cooling plate 160. These slits 164 prevent interference between the cooling plate 160, which has moved toward the heating region 122, and the lift pins 141 on the heating plate 132. As shown in FIG. 4 , lift pins 165 are provided below the cooling plate 160 in the cooling region 123. The lift pins 165 can be raised and lowered by a lift driver 166. The lift pins 165 rise from below the cooling plate 160, pass through the slits 164, and protrude above the cooling plate 160, allowing the wafer W to be transferred between the cooling plate 160 and the wafer transfer device 70, which enters the housing 120 from the loading / unloading port 121, for example.

[0043] Furthermore, a plurality of support pins 167 are provided on the upper surface of the cooling plate 160 to support the wafer W while separating the backside of the wafer W from the upper surface of the cooling plate 160. The support pins 167 are formed in a rod shape and are provided so as to extend upward. The height of the support pins 167 is, for example, 2 mm.

[0044] <Wafer processing> Next, wafer processing performed using the wafer processing system 1 will be described.

[0045] First, a cassette C containing a plurality of wafers W is placed on a predetermined cassette mounting plate 21 in the cassette station 10. Thereafter, the wafers W in the cassette C are sequentially removed by the wafer transfer device 23 and transferred to, for example, the delivery device 52 in the third block G3 of the processing station 11.

[0046] Next, the wafer W is transferred by the wafer transfer device 70 to, for example, the bottom anti-reflection film forming device 31 in the first block G1, where a bottom anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 40 in the second block G2, where heat treatment is performed.

[0047] The wafer W transferred to the heat treatment apparatus 40 is first placed on the cooling plate 160. Subsequently, the cooling plate 160 is moved above the heating plate 132. Next, the lifting pins 141 are raised, and the wafer W on the cooling plate 160 is transferred to the lifting pins 141. Thereafter, the cooling plate 160 is retracted from above the heating plate 132, and the lifting pins 141 are lowered, and the wafer W is transferred onto the heating plate 132. Furthermore, the lid 130 is lowered to form the processing chamber S, and the heating process of the wafer W is started.

[0048] After the wafer W has been heated for a predetermined time, the lid 130 rises, and the lifting pins 141 also rise, moving the wafer W above the heating plate 132. The cooling plate 160 also moves above the heating plate 132. The lifting pins 141 then descend, and the wafer W is transferred to the cooling plate 160. The cooling plate 160 is then moved to the cooling region 123. The wafer W transferred to the cooling plate 160 is cooled to room temperature, for example, in the cooling region 123, and then carried out of the heat treatment apparatus 40.

[0049] After the heat treatment in the heat treatment device 40, the wafer W is transferred by the wafer transfer device 70 to the resist coating device 32, where a resist film is formed on the wafer W. The wafer W is then transferred by the wafer transfer device 70 to the heat treatment device 40, where it is pre-baked. Note that the pre-baking process is similar to the heat treatment performed after the formation of the bottom anti-reflection coating, and similar processes are also performed in the heat treatment after the formation of the anti-reflection coating, the PEB process, and the post-baking process, which will be described later. However, the heat treatment devices 40 used for each heat treatment are different from each other.

[0050] Next, the wafer W is transferred by the wafer transfer device 70 to the top anti-reflection coating forming device 33, where a top anti-reflection coating is formed on the wafer W. The wafer W is then transferred to the heat treatment device 40, where it is subjected to heat treatment. Thereafter, the wafer W is transferred by the wafer transfer device 70 to the edge exposure device 42, where it is subjected to edge exposure treatment.

[0051] Next, the wafer W is transferred to the transfer device 52 by the wafer transfer device 70, and then transferred to the transfer device 62 in the fourth block G4 by the shuttle transfer device 80. Thereafter, the wafer W is transferred to the exposure device 12 by the wafer transfer device 100 in the interface station 13, where it is exposed to a predetermined pattern. Next, the wafer W is transferred to the transfer device 60 in the fourth block G4 by the wafer transfer device 100. Thereafter, the wafer W is transferred to the heat treatment device 40 by the wafer transfer device 70, where it is subjected to PEB treatment.

[0052] Next, the wafer W is transferred by the wafer transfer device 70 to the developing treatment device 30, where the developing treatment is performed. After the developing treatment, the wafer W is transferred by the wafer transfer device 70 to the heat treatment device 40, where the wafer W is subjected to a post-bake treatment.

[0053] Next, the wafer W is transferred to the transfer device 50 in the third block G3 by the wafer transfer device 70. Thereafter, the wafer W is transferred to a cassette C on a predetermined cassette mounting plate 21 by the wafer transfer device 23 in the cassette station 10, completing a series of photolithography steps. Then, this series of photolithography steps is also performed on the subsequent wafer W in the same cassette C.

[0054] <Temperature measurement unit> Next, an example of a temperature measurement unit for simulating the temperature on the hot plate 132 of the heat treatment device 40 will be described. Fig. 6 is a side view showing an outline of an example of the temperature measurement unit, showing the state where it is attached to the heat treatment device 40, and of the heat treatment device 40, only the main parts related to temperature measurement are shown in vertical cross section. Fig. 7 is a plan view showing an outline of an example of the temperature measurement unit.

[0055] As shown in FIGS. 6 and 7, the temperature measuring unit 200 includes a measuring wafer 201 as a measuring substrate, an information processing unit 202, a mounting member 203, and a cable 204.

[0056] The measuring wafer 201 has a main body 210 formed of the same material and in the same shape as the wafer W. A plurality of temperature sensors 211 are mounted on the upper surface of the measuring wafer 201 (specifically, on the upper surface of the main body 210). In the example of FIG. 7, five temperature sensors 211 are mounted, one of which is mounted at the center of the measuring wafer 201, and the other four are mounted at equal intervals on the same circumference centered on the center of the measuring wafer 201. The temperature sensors 211 may be, for example, thermocouples. Note that the number of temperature sensors 211 mounted may be one.

[0057] The measurement wafer 201 is placed on a cooling plate 160 located in the cooling region 123, and like a normal wafer W, is transported to the heating region 122 by the cooling plate 160, and is transferred from the cooling plate 160 to the heating plate 132 and placed thereon.

[0058] The information processing unit 202 acquires at least the detection result from the temperature sensor 211 . The information processing unit 202 has a housing 220 whose outer shape is a rectangular parallelepiped. Although not shown in the figure, the housing 220 is provided with, for example, an A / D converter that performs A / D conversion of the detection result by the temperature sensor 211, a processor that performs calibration of the A / D converted detection result, a memory that stores the detection result by the temperature sensor 211 after calibration and a calibration value table used for the calibration, and a communication unit that communicates with the control device U and transmits the detection result. The communication between the communication unit and the control device U may be performed by wire or wirelessly. Inside the housing 220, there is also provided a wiring board (not shown) on which the above-mentioned A / D converter, processor, memory, and communication unit are mounted.

[0059] The mounting member 203 is a member for detachably mounting the information processing unit 202 to the partition wall F, which serves as a mounting target facing the heating region 122 and the cooling region 123 therebetween. The mounting member 203 has a hook portion 230 and a fixing portion 231 .

[0060] The hook portion 230 engages with the lower edge of the partition wall F. The hook portion 230 is provided so as to extend from the upper end of the fixing portion 231 toward the heat treatment device 40 side. The fixing portion 231 is formed in a flat plate shape extending along the partition wall F, and the information processing portion 202 is fixed to the surface opposite to the partition wall F.

[0061] The information processing unit 202 is attached to the partition F via the attachment member 203 by the engagement of the hook portion 230 with the lower edge of the opening F1 of the partition F. The information processing unit 202 can be removed from the partition F by releasing the engagement of the hook portion 230 with the lower edge of the opening F1 of the partition F.

[0062] Cable 204 electrically connects temperature sensor 211 of measuring wafer 201 to information processing unit 202 , and transmits the detection results of temperature sensor 211 to information processing unit 202 . The cable 204 includes a plurality of coated wires 240 and a flat cable 241 .

[0063] The coated wires 240 are wires made of a metal material such as nickel coated with an insulating and heat-resistant material (e.g., ceramic). One end of each coated wire 240 is connected to a corresponding temperature sensor 211, and the other end is connected to one end of a flat cable 241. A portion of the coated wires 240 located above the measuring wafer 201 is fixed to the upper surface of the main body 210 of the measuring wafer 201 with, for example, a heat-resistant adhesive.

[0064] The flat cable 241 is made of a flexible printed circuit (FPC) board using, for example, polyimide as a base material, and has a plurality of wiring patterns (not shown) inside. One end of the flat cable 241 is connected to the other end of the coated wire 240, and the other end of the flat cable 241 is connected to the information processing unit 202. Specifically, one end of each of the above wiring patterns of the flat cable 241 is connected to the other end of the corresponding coated wire 240, and the other end of each of the above wiring patterns is connected to the information processing unit 202.

[0065] Cable 204 is configured to be able to follow the movement of measurement wafer 201 when measurement wafer 201 moves with information processing unit 202 attached to partition F. Specifically, with information processing unit 202 attached to partition F, cable 204 is configured to be able to follow the movement of measurement wafer 201 when cooling plate 160 on which measurement wafer 201 is placed is moved from cooling region 123 to heating region 122, and then measurement wafer 201 is placed on heating plate 132. More specifically, cable 204 has a length and flexibility sufficient to be able to follow the movement of measurement wafer 201 with information processing unit 202 attached to partition F.

[0066] Furthermore, at least the portion of cable 204 that is located in heating area 122 when measuring wafer 201 is placed on heating plate 132 is made of coated wire 240 .

[0067] <Temperature measurement method> Next, a temperature measurement method using the above-described temperature measurement unit 200 will be described with reference to Figures 8 to 10. Figures 8 to 10 are diagrams showing the state of the temperature measurement unit 200 in some steps of the temperature measurement method.

[0068] (1. Ensuring traffic flow) First, the flow line of the worker is secured in accordance with the position of the heat treatment device 40 where the temperature measurement is to be performed (hereinafter referred to as the "target heat treatment device 40"). For example, when the target heat treatment device 40 is located on the cassette station 10 side, some or all of the delivery devices 50 to 55 of the third block G3 are removed by an operator, and the transfer arm 70a of the wafer transfer device 70 is moved to the interface station 13 side by the control device U. This allows the operator to enter the wafer transfer area D from the cassette station 10 and move in front of the target heat treatment device 40. Furthermore, when the target heat treatment apparatus 40 is located on the interface station 13 side, some or all of the delivery devices 60-62 of the fourth block G4 are removed by an operator, and the transfer arm 70a of the wafer transfer apparatus 70 is moved to the cassette station 10 side by the control device U. This allows the operator to enter the wafer transfer area D from the interface station 13 and move in front of the target heat treatment apparatus 40.

[0069] (2. Heating the hot plate) While the flow line is being secured or before the flow line is secured, heating of the hot plate 132 is started. Then, the hot plate 132 is heated to a high set temperature of 250° C. or higher, and is brought into a state where heat processing of the wafer W can be performed. Note that heating of the hot plate 132 may also be started after the flow line is secured.

[0070] (3. Installation of the information processing unit 202) Then, the worker who has entered the wafer transfer area D attaches the information processing unit 202 of the temperature measurement unit 200 to the partition F. Specifically, the worker who has entered the wafer transfer area D hooks the hook portion 230 of the attachment member 203 onto the lower edge of the opening F1 of the partition F that corresponds to the target heat treatment apparatus 40, and the hook portion 230 engages with the lower edge of the opening F1 of the partition F, thereby attaching the information processing unit 202 to the partition F via the attachment member 203. The information processing unit 202 is attached so as to be located in the wafer transfer area D.

[0071] (4. Placement of the measurement wafer 201) Next, an operator places measurement wafer 201 on cooling plate 160 located in cooling region 123. Specifically, the operator places measurement wafer 201 via support pins 167 on cooling plate 160 located in cooling region 123 at a predetermined position in a predetermined orientation. After the measurement wafer 201 is placed on the cooling plate 160, the information processing unit 202 may be attached. After installing the information processing unit 202 and placing the measurement wafer 201 , the worker leaves the wafer processing system 1 .

[0072] (5. Delivery to hot plate 132) Next, the measurement wafer 201 is moved, i.e., transported, by the cooling plate 160 to the heating region 122 and handed over to the heating plate 132. Specifically, first, the cooling plate 160 on which the measurement wafer 201 is placed is moved from the cooling region 123 to the heating region 122, as shown in FIG. 8. This movement continues until the cooling plate 160 moves above the heating plate 132. Next, as shown in FIG. 9, the lifting pins 141 are raised, whereby the measurement wafer 201 on the cooling plate 160 is handed over to the lifting pins 141 and raised, and then the cooling plate 160 is retracted from the heating region 122 to the cooling region 123. At the same time, as shown in FIG. 10, the lifting pins 141 are lowered, and the measurement wafer 201 is placed on the heating plate 132.

[0073] (6. Temperature detection) Then, temperature detection is performed by the temperature sensors 211. Specifically, first, the lid 130 is lowered to form the processing chamber S, and heating of the wafer W is initiated. After a predetermined time has elapsed since the start of heating, and the temperature of the test wafer 201 has stabilized, the temperature sensors 211 begin temperature detection. When temperature detection begins, each temperature sensor 211 detects the temperature of the portion of the test wafer 201 (its main body 210) where the temperature sensor 211 is mounted. The detection result is transmitted via cable 204 to the information processor 202, which is attached to the partition wall F facing the heating region 122 across the cooling region 123. The detection result is also transmitted from the information processor 202 to the control device U. Based on the detection result, the control device U calculates, i.e., measures, the temperature of the portion of the test wafer 201 where the temperature sensor 211 is mounted. The control device U also automatically adjusts the amount of heat applied to the heating plate 132 by the heater 140, based on the measurement result of the temperature of the test wafer 201. After this correction, temperature detection and temperature measurement are performed again in the same manner as described above, and automatic adjustment of the heating amount of the hot plate 132 by the heater 140, temperature detection and temperature measurement are repeated until the desired temperature measurement result is obtained. When the desired temperature measurement result is obtained, temperature detection is completed.

[0074] (7. Delivery to the cooling plate 160 located in the heating area 122) When the temperature detection is completed, measurement wafer 201 is returned to cooling plate 160. Specifically, cooling plate 160 is moved back to heating region 122, and measurement wafer 201 is placed on cooling plate 160 located in heating region 122. More specifically, lifting pins 141 first rise, and measurement wafer 201 on heating plate 132 is handed over to lifting pins 141 and then raised. Thereafter, cooling plate 160 is moved to heating region 122 and inserted between measurement wafer 201 and heating plate 132. Then, lifting pins 141 are lowered, and measurement wafer 201 is placed on cooling plate 160.

[0075] (8. Cooling of the measurement wafer 201) Next, measurement wafer 201 is cooled by cooling plate 160. Specifically, cooling plate 160 on which measurement wafer 201 is placed is moved to cooling region 123, and measurement wafer 201 is cooled by cooling plate 160 in cooling region 123. Measurement wafer 201 is cooled to, for example, room temperature.

[0076] (9. Removal) After cooling, the measuring wafer 201 is removed from the cooling plate 160 by an operator who enters the wafer transfer area D, and the information processing unit 202 is removed from the partition wall F together with the mounting member 203 .

[0077] The above steps are performed in order for each heat treatment device 40. Note that a plurality of temperature measurement units 200 may be provided so that temperature measurements for a plurality of heat treatment devices 40 may be performed in parallel.

[0078] The temperature measurement method according to this embodiment uses the temperature measurement unit 200 as described above. This temperature measurement unit 200 has a cable 204 that connects the temperature sensor 211 mounted on the test wafer 201 to the information processing unit 202 that acquires the detection results of the temperature sensor 211. The cable 204 is configured to be able to follow the movement of the test wafer 201 when the cooling plate 160 on which the test wafer 201 is placed is moved from the cooling region 123 to the heating region 122 and then the test wafer 201 is placed on the heating plate 132, with the information processing unit 202 detachably attached to the partition wall F. By using such temperature measurement unit 200, it is possible to attach information processing unit 202 to partition wall F and measure the temperature of test wafer 201 heated by heating plate 132 based on the detection result from temperature sensor 211 mounted on test wafer 201. Information processing unit 202 contains components that may malfunction or be damaged in a high-temperature environment (for example, the A / D converter, processor, memory, communication unit, and wiring board in housing 220 described above). However, because partition wall F to which information processing unit 202 is attached faces heating region 122 with cooling region 123 between them and is separated from heating region 122, these components will not malfunction or be damaged even if heating plate 132 is at a high temperature. Therefore, even when the temperature of heating plate 132 is high, it is possible to measure the temperature of test wafer 201 heated by heating plate 132. Therefore, whether the temperature of heating plate 132 is high or low, it is possible to simulate and measure the temperature of wafer W when heated by heating plate 132.

[0079] A possible temperature measurement method other than the temperature measurement method disclosed herein is one in which an operator opens a panel on the rear side of wafer processing system 1, places a test wafer similar to test wafer 201 directly on hot plate 132, measures the temperature, and then directly removes the test wafer from hot plate 132 after the measurement (hereinafter referred to as the "alternative method"). In this alternative method, if hot plate 132 is heated to a set temperature when the test wafer is placed on hot plate 132, the operator cannot work safely. Therefore, for example, when the test wafer is placed on hot plate 132, hot plate 132 is set to room temperature, and after the wafer is placed on hot plate 132, the temperature of hot plate 132 is increased from room temperature to the set temperature. Because this temperature increase takes a long time, the alternative method does not allow for safe temperature measurement in a short time.

[0080] In contrast, in the temperature measurement method according to this embodiment, an operator places test wafer 201 on cooling plate 160 located in cooling region 123, and test wafer 201 is then placed on heating plate 132 via cooling plate 160. This makes it possible to heat heating plate 132 to a set temperature before test wafer 201 is placed on heating plate 132. Therefore, this embodiment does not require the heating of heating plate 132 after test wafer 201 is placed on it, as was necessary in the alternative method, and therefore allows temperature measurement to be performed safely in a short time.

[0081] Furthermore, in the above alternative method, if the hot plate 132 and the measurement wafer are heated to a set temperature when the measurement wafer is removed, the operator cannot work safely. Therefore, for example, after the temperature measurement, the hot plate 132 and the measurement wafer are cooled to room temperature before the measurement wafer is removed from the hot plate 132. This cooling process takes a long time, and from this perspective, the above alternative method also cannot perform temperature measurement safely in a short time.

[0082] In contrast, in the temperature measurement method according to this embodiment, after test wafer 201 is cooled by cooling plate 160, the operator removes test wafer 201 from cooling plate 160 located in cooling region 123. This eliminates the need to lower the temperature of heating plate 132 after temperature measurement, which was necessary in the alternative method, and also makes it possible to lower the temperature of test wafer 201 to room temperature, i.e., cool it, in a short time. Therefore, according to this embodiment, temperature measurement can be performed safely in a short time.

[0083] Furthermore, in the above alternative method, the worker performs the work from the rear side of the wafer processing system 1. There is often insufficient space on the rear side of the wafer processing system 1, making work from the rear side of the wafer processing system 1 difficult to perform, and it is also difficult for the worker to move close to the target heat treatment device 40. In contrast, in the temperature measurement method according to this embodiment, the worker performs the work from the wafer transfer area D of the wafer processing system 1. Because sufficient space is secured in the wafer transfer area D, work from the wafer transfer area D is more efficient than work from the rear side, and the worker can easily move close to the target heat treatment device 40.

[0084] Furthermore, according to this embodiment, the time required for temperature measurement can be reduced by 50 hours or more compared to the alternative method. Furthermore, according to this embodiment, temperature measurement can be performed in a short time, so the time required for automatic adjustment of the heat amount of the heating plate 132 in the heat treatment device 40, including the time required for temperature measurement, can also be shortened.

[0085] <Other examples of temperature measurement units> Next, another example of the temperature measurement unit will be described. Fig. 11 is a side view showing an outline of another example of the temperature measurement unit, showing the state where it is attached to heat treatment device 40, and of heat treatment device 40, only the main parts related to temperature measurement are partially shown in vertical cross section. Note that Fig. 11 shows only a part of a guide plate 301, which will be described later, in cross section. Fig. 12 is a plan view showing an outline of another example of the temperature measurement unit. Figs. 13 to 16 are diagrams for explaining the effects of the temperature measurement units of the examples of Figs. 11 and 12.

[0086] The temperature measuring unit 300 in FIG. 11 includes a measuring wafer 201, an information processing unit 202, a mounting member 203, and a cable 204, as well as a guide plate 301 as an intervening member.

[0087] The guide plate 301 is positioned and placed on the cooling plate 160 . Measurement wafer 201 is placed on cooling plate 160 via guide plate 301. In other words, measurement wafer 201 is placed on cooling plate 160 with guide plate 301 sandwiched between measurement wafer 201 and cooling plate 160. Furthermore, measurement wafer 201 is cooled by cooling plate 160 via guide plate 301. Specifically, measurement wafer 201 is cooled by guide plate 301, which is cooled by cooling plate 160.

[0088] The guide plate 301 is positioned relative to the cooling plate 160 by fitting a notch (not shown) formed in the cooling plate 160 with a positioning protrusion (not shown) formed on the underside of the guide plate 301 and protruding downward. A plurality of combinations of the notch and the positioning protrusion may be provided. The guide plate 301 is made of a material with high thermal conductivity (for example, a metal material such as stainless steel).

[0089] As shown in FIGS. 11 and 12 , guide plate 301 has a plurality of guide pins 310 serving as guides for positioning measurement wafer 201 relative to guide plate 301. Therefore, when measurement wafer 201 is placed on cooling plate 160 via guide plate 301, measurement wafer 201 is positioned relative to cooling plate 160. Therefore, when measurement wafer 201 is transported above heating plate 132 by cooling plate 160, measurement wafer 201 can be transported to a desired position. As a result, measurement wafer 201 can be reliably placed at a desired position on heating plate 132. That is, measurement wafer 201 can be positioned relative to heating plate 132 and placed on heating plate 132. More specifically, when measurement wafer 201 is placed on heating plate 132, the horizontal deviation from the desired position can be kept within a predetermined range.

[0090] Incidentally, the hot plate 132 may be provided with a guide protrusion (not shown) for guiding the wafer W to a desired position on the hot plate 132. By providing the guide pin 310 on the guide plate 301, when the measurement wafer 201 is placed on the hot plate 132, it is possible to prevent the measurement wafer 201 from riding on the guide protrusion.

[0091] 11, guide plate 301 is formed with a plurality of through holes 311 penetrating the plate in the thickness direction. A support pin 167 is inserted into each through hole 311. When guide plate 301 is placed on cooling plate 160, the tops of support pins 167 protrude from the top surface of guide plate 301 through through holes 311. Test wafer 201 is supported by the plurality of support pins 167 with their tops protruding in this manner.

[0092] The guide plate 301 may be positioned relative to the cooling plate 160 by engaging the through holes 311 with the support pins 167 .

[0093] By using guide plate 301 having through holes 311, it is possible to reduce the amount of sagging of cable 204 from the tops of support pins 167 as shown in FIG. 13 while preventing a decrease in the cooling efficiency of cooling plate 160 for measuring wafer 201. If guide plate 301 is not provided and the amount of sagging is large as shown in FIG. 14, the portion of cable 204 hanging from the tops of support pins 167 may not be able to move upward when cooling plate 160 is moved. As a result, a large force may be applied to cable 204 from support pins 167, which may damage cable 204. In contrast, if guide plate 301 is used and the amount of sagging is small as described above, the portion of cable 204 hanging from the tops of support pins 167 moves upward when cooling plate 160 is moved, so no large force is applied to cable 204 from support pins 167, and cable 204 is not damaged.

[0094] Furthermore, if the amount of sagging is large, when cooling plate 160 is moved away from hot plate 132 with measurement wafer 201 supported by lift pins 141, cable 204 also moves with the movement of cooling plate 160, and measurement wafer 201 may move on lift pins 141. If measurement wafer 201 moves in this manner, it may not be possible to place measurement wafer 201 at a desired position on hot plate 132. In contrast, if the amount of sagging is small, when cooling plate 160 is moved in the same manner with measurement wafer 201 supported by lift pins 141, cable 204 will not move with the movement of cooling plate 160, and measurement wafer 201 will not move on lift pins 141.

[0095] Furthermore, guide plate 301 has a low heat capacity because it is thin enough to allow support pins 167 to penetrate through it. Therefore, measurement wafer 201 can be efficiently cooled by cooling plate 160 via guide plate 301.

[0096] From the viewpoint of heat capacity, guide plate 301 is preferably thinner than cooling plate 160. Specifically, the plate-shaped portion of guide plate 301 is preferably thinner than the plate-shaped portion of cooling plate 160. This reduces the heat capacity of guide plate 301. As a result, measurement wafer 201 can be efficiently cooled by cooling plate 160 via guide plate 301.

[0097] 11, a plurality of upwardly projecting convex portions 312 may be formed on the upper surface of guide plate 301, and measuring wafer 201 may be supported by these convex portions 312. As shown in FIG. In this way, by supporting measurement wafer 201 with multiple protrusions 312 or with multiple support pins 167 protruding from the top surface of guide plate 301 via through holes 311, it is possible to reduce the contact area between guide plate 301 and measurement wafer 201. This makes it possible to prevent measurement wafer 201, which has been heated by heating plate 132, from being rapidly cooled by guide plate 301 and damaged.

[0098] The height of the protrusion 312 is set so that the amount of hanging of the cable 204 from the top of the protrusion 312 is smaller than the amount of hanging of the cable 204 from the top of the support pin 167 when the guide plate 301 is not used. For example, the height of the protrusion 312 is set so that the top of the protrusion 312 is approximately the same height as the top of the support pin 167.

[0099] 11 and 12, a barb 314 may be provided as an entrapment prevention part at the end of the guide plate 301 on the heating region 122 side. The barb 314 is continuous with the upper surface of the guide plate 301 and has a slope 314a that extends obliquely downward from one end of the guide plate 301.

[0100] 15, when the cooling plate 160 is inserted between the measurement wafer 201 supported by the lifting pins 141 and the heating plate 132, the cable 204, which is hanging down due to its own weight or the like, may become entangled between the cooling plate 160 and the heating plate 132. If the cable 204 or other components of the temperature measuring unit 300 are entangled in this way, the cable 204 or other components of the temperature measuring unit 300 may be damaged, or the inside of the housing 120 of the heat treatment apparatus 40 may be contaminated.

[0101] 16, when guide plate 301 having barbs 314 is used, even if cable 204 is hanging down (see dotted line) when cooling plate 160 is inserted between test wafer 201 and heating plate 132, cable 204 rises along inclined surface 314a (see solid line) as cooling plate 160 is inserted. Therefore, cable 204 will not be entangled between cooling plate 160 and heating plate 132. This makes it possible to prevent damage to temperature measurement unit 300 and contamination inside housing 120 of heat treatment apparatus 40, which may be caused by entanglement of cable 204.

[0102] The barbs 314 are formed as follows: That is, the barbs 314 are formed so that when the guide plate 301 is placed on the cooling plate 160, the lower ends of the barbs 314 are positioned above the lower surface of the cooling plate 160. This prevents the barbs 314 from colliding with the heating plate 132 and the like when the cooling plate 160 is moved to the heating region. Furthermore, the barbs 314 are formed so that the lower ends of the barbs 314 are positioned below the upper surface of the cooling plate 160 when the guide plate 301 is placed on the cooling plate 160. This more reliably prevents the cable 204 from getting tangled between the cooling plate 160 and the hot plate 132.

[0103] When using guide plate 301, for example, by placing guide plate 301 on which measurement wafer 201 is placed on cooling plate 160, measurement wafer 201 is placed on cooling plate 160 via the guide plate.

[0104] The guide plate 301 may be provided with a gripping portion that can be gripped by an operator. By providing the gripping portion in this manner, the operator can easily place the guide plate 301 on the cooling plate 160 from the wafer transfer area D through the opening F1 and the loading / unloading port 121.

[0105] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0106] 40 Heat treatment equipment 122 Heating area 123 Cooling area 132 Hot plate 160 Cooling plate 200, 300 Temperature Measurement Unit 201 Measurement wafer 202 Information Processing Department 204 Cable 211 Temperature Sensor F Bulkhead W wafer

Claims

1. a measurement board equipped with a sensor for measuring temperature; an information processing unit that acquires a detection result by the sensor; a cable connecting the sensor and the information processing unit, the information processing unit is configured to be detachably attached to a mounting portion facing a heating region where a hot plate is provided, the cable is configured to be able to follow the movement of the measurement substrate when, with the information processing unit attached to the attachment portion, a substrate support member on which the measurement substrate is placed is moved from a non-heated region located outside the heating region to the heating region and the measurement substrate is placed on the hot plate; The information processing unit is configured to be fixed in a position in the non-heated area where the mounting portion is sandwiched between the information processing unit and the measurement substrate, which is located in a removable position away from the heated area.

2. The temperature measuring unit according to claim 1 , wherein the mounting portion is fixed independently without following the movement of the substrate support member.

3. 3. The temperature measuring unit according to claim 1, further comprising an attachment member to which the information processing unit is fixed and which has a fixing portion for detachably attaching the information processing unit to the attachment portion.

4. 4. The temperature measuring unit according to claim 1, wherein the cable is formed of a flat cable and has flexibility.

5. an interposition member that defines the position of the measurement substrate relative to the substrate support member; 5. The temperature measurement unit according to claim 1, wherein the interposing member has a guide for positioning the measurement substrate relative to the interposing member.

6. A heat treatment apparatus for heat treating a substrate, comprising: A hot plate and a temperature measurement unit; The temperature measurement unit a measurement board equipped with a sensor for measuring temperature; an information processing unit that acquires the detection results of the sensor; a cable connecting the sensor and the information processing unit, the information processing unit is configured to be detachably attached to a mounting portion facing the heating region where the hot plate is provided, the cable is configured to be able to follow the movement of the measurement substrate when, with the information processing unit attached to the attachment portion, a substrate support member on which the measurement substrate is placed is moved from a non-heated region located outside the heating region to the heating region and the measurement substrate is placed on the hot plate; The heat treatment apparatus is configured so that the information processing unit is fixed in a position in the non-heating area where the attachment portion is sandwiched between the information processing unit and the measurement substrate, which is located in a removable position away from the heating area.

7. The heat treatment apparatus according to claim 6 , wherein the mounting portion is fixed independently without following the movement of the substrate support member.

8. 8. The heat treatment apparatus according to claim 6, further comprising an attachment member to which the information processing section is fixed and which has a fixing section for detachably attaching the information processing section to the attachment section.

Images