Substrate Processing Equipment

Abstract

To provide a substrate processing device capable of suppressing process gases from being mixed in process gas supply regions.SOLUTION: A substrate processing device 300 comprises: a processing container 311; a rotation table 321 provided in the processing container rotatably; a first processing region (a material gas adsorption region P1) where a first process gas is supplied to a top face of the rotation table; a second processing region (a reaction gas supply region) which is provided so as to be separated from the first processing region in a circumferential direction of the rotation table, and to which a second process gas to be reacted with the first process gas is supplied to the top face of the rotation table; and a separation region which is provided between the first and second processing regions in the circumferential direction of the rotation table, and in which a separation gas for separating the first process gas from the second process gas is supplied to the top face of the rotation table. Partition members (cover members 315e and 315f and gap adjustment members 315g and 315h) are provided so that a gap in at least part of the separation region becomes narrower than a gap in both of the processing regions.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] An apparatus is known that forms various films on wafers by rotating a turntable on which multiple wafers are placed, causing each wafer to revolve and repeatedly pass through multiple processing gas supply regions arranged along the radial direction of the turntable (see, for example, Patent Document 1). In this apparatus, while the wafers revolve on the turntable, the wafer mounting table is rotated so that the wafers rotate on their own axis, thereby achieving uniformity of the film in the circumferential direction of the wafers. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-111758 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can prevent mixing of process gases between process gas supply regions. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure comprises a processing vessel, a turntable rotatably arranged within the processing vessel, a heater arranged below the turntable, a partition member arranged between the turntable and the heater with a gap from the underside of the turntable, separating an area where the turntable is arranged from an area where the heater is arranged, a first processing region where a first processing gas is supplied to the upper surface of the turntable, a second processing region arranged spaced apart from the first processing region in the circumferential direction of the turntable, and a second processing gas that reacts with the first processing gas is supplied to the upper surface of the turntable, and a separation region arranged between the first processing region and the second processing region in the circumferential direction of the turntable, and a separation gas that separates the first processing gas and the second processing gas is supplied to the upper surface of the turntable, wherein the partition member is arranged so that the gap in at least a portion of the separation region is narrower than the gap in the first processing region and the second processing region. [Effects of the Invention]

[0006] According to the present disclosure, mixing of process gases between process gas supply regions can be suppressed. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of a substrate processing apparatus according to an embodiment. [Figure 2] FIG. 1 is a plan view showing an example of an internal structure of a substrate processing apparatus according to an embodiment; [Figure 3] FIG. 2 is a plan view showing an example of an internal structure of the substrate processing apparatus according to the embodiment; [Figure 4] Enlarged cross-sectional view of the center of the rotary table (1) [Figure 5] Enlarged cross-sectional view of the center of the rotary table (2) [Figure 6] Enlarged cross-sectional view of the center of the rotary table (3) [Figure 7] Enlarged cross-sectional view of the center of the rotary table (4) [Figure 8] FIG. 1 is a perspective view showing an example of a storage box; [Figure 9] Cross-sectional view showing an example of a storage box [Figure 10] Figure (1) showing the simulation results [Figure 11] Figure (2) showing the simulation results [Figure 12] Figure (3) showing the simulation results [Figure 13] Figure (4) showing the simulation results DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] [Substrate Processing Apparatus] An example of a substrate processing apparatus according to an embodiment will be described with reference to FIGS. 1 to 9. FIG. 1 is a cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. FIG. 2 is a plan view showing an example of the internal structure of the substrate processing apparatus according to an embodiment, showing the substrate processing apparatus in a state where the top plate has been removed. FIG. 3 is a plan view showing an example of the internal structure of the substrate processing apparatus according to an embodiment, showing the substrate processing apparatus in a state where the top plate and turntable have been removed. FIGS. 4 to 7 are cross-sectional views showing an enlarged central portion of the turntable. FIG. 8 is a perspective view showing an example of a storage box. FIG. 9 is a cross-sectional view showing an example of a storage box.

[0010] The substrate processing apparatus 300 includes a processing section 310 , a rotation driving device 320 , and a control section 390 .

[0011] The processing unit 310 is configured to perform a film formation process for forming a film on a substrate, and includes a processing vessel 311, a gas inlet 312, a gas outlet 313, a transfer port 314, a heating unit 315, and a cooling unit 316.

[0012] The processing vessel 311 is a vacuum vessel whose interior can be depressurized. The processing vessel 311 has a flat shape with a substantially circular planar shape. The processing vessel 311 accommodates a plurality of substrates W therein. The substrates W may be, for example, semiconductor wafers. The processing vessel 311 includes a main body 311a, a top plate 311b, a sidewall 311c, and a bottom plate 311d (FIG. 1). The main body 311a has a substantially cylindrical shape. The top plate 311b is airtightly and detachably disposed on the upper surface of the main body 311a via a seal portion 311e. The sidewall 311c is connected to the lower surface of the main body 311a and has a substantially cylindrical shape. The bottom plate 311d is airtightly disposed on the bottom surface of the sidewall 311c.

[0013] The gas inlet 312 includes a source gas nozzle 312a, a reaction gas nozzle 312b, separation gas nozzles 312c and 312d, and a purge gas inlet 312e (FIGS. 1 and 2).

[0014] The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are arranged above the turntable 321 at intervals in the circumferential direction of the processing vessel 311 (the direction indicated by arrow A in FIG. 2). In the illustrated example, the separation gas nozzle 312c, the source gas nozzle 312a, the separation gas nozzle 312d, and the reaction gas nozzle 312b are arranged in this order clockwise (the rotation direction of the turntable 321) from the transfer port 314. Gas introduction ports 312a1, 312b1, 312c1, and 312d1 (FIG. 2), which are the base ends of the source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d, are fixed to the outer peripheral wall of the main body 311a. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are introduced into the processing vessel 311 from the outer peripheral wall of the processing vessel 311 and are attached to extend horizontally along the radial direction of the main body 311a relative to the rotary table 321. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are made of, for example, quartz.

[0015] The raw material gas nozzle 312a is connected to a raw material gas supply source (not shown) via piping, a flow rate controller, etc. (neither of which are shown). The raw material gas nozzle 312a is provided with a plurality of discharge holes (not shown) that open toward the turntable 321. The plurality of discharge holes are arranged at intervals along the length of the raw material gas nozzle 312a. The raw material gas nozzle 312a discharges the raw material gas from the plurality of discharge holes toward the upper surface of the turntable 321. The region below the raw material gas nozzle 312a becomes a raw material gas adsorption region P1 for adsorbing the raw material gas onto the substrate W. Examples of the raw material gas include a silicon-containing gas and a metal-containing gas.

[0016] The reactive gas nozzle 312b is connected to a reactive gas supply source (not shown) via piping, a flow rate controller, and the like (neither of which are shown). The reactive gas nozzle 312b is provided with a plurality of discharge holes (not shown) that open toward the turntable 321. The plurality of discharge holes are arranged at intervals along the length of the reactive gas nozzle 312b. The reactive gas nozzle 312b discharges the reactive gas from the plurality of discharge holes toward the upper surface of the turntable 321. The region below the reactive gas nozzle 312b becomes a reactive gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1. Examples of the reactive gas include an oxidizing gas and a nitriding gas.

[0017] The separation gas nozzles 312c and 312d are both connected to a separation gas supply source (not shown) via piping and flow control valves (neither of which are shown). The separation gas nozzles 312c and 312d are provided with a plurality of discharge holes (not shown) that open toward the turntable 321. The plurality of discharge holes are arranged at intervals along the length of the separation gas nozzles 312c and 312d. The separation gas nozzles 312c and 312d discharge the separation gas from the plurality of discharge holes toward the upper surface of the turntable 321. Examples of the separation gas include inert gases such as Ar gas and N2 gas.

[0018] 2, two convex portions 317 are provided in the processing vessel 311. The convex portions 317, together with the separation gas nozzles 312c and 312d, form a separation region D, and are attached to the underside of the top plate 311b so as to protrude toward the turntable 321. The convex portions 317 have a fan-shaped planar shape with an arc-shaped top, and are disposed so that the inner arc is connected to the protruding portion 318 and the outer arc is aligned along the inner circumferential wall of the main body 311a of the processing vessel 311.

[0019] The purge gas inlet 312e introduces purge gas into an area A1 surrounded by the main body 311a, the sidewall 311c, the bottom plate 311d, the fixed shaft 315a, and the heater support 315b (FIG. 1). The purge gas inlet 312e is provided, for example, below the bottom plate 311d. However, the purge gas inlet 312e may be provided, for example, penetrating the sidewall 311c or the bottom plate 311d. Furthermore, for example, multiple purge gas inlets 312e may be provided. By introducing the purge gas into the area A1, the area A1 is maintained in a purge gas atmosphere. Furthermore, the purge gas introduced into the area A1 flows into the underside of the turntable 321 through a gap G1 between the main body 311a and the heater support 315b. This prevents the source gas and the reaction gas discharged from the source gas nozzle 312a and the reaction gas nozzle 312b, respectively, from flowing into the lower surface of the turntable 321 through the gap G1 and into the region A1. The purge gas is an inert gas such as Ar gas or N2 gas.

[0020] The gas exhaust port 313 includes a first exhaust port 313a and a second exhaust port 313b (FIG. 2). The first exhaust port 313a is formed in the bottom of the first exhaust region E1, which is in communication with the source gas adsorption region P1. The second exhaust port 313b is formed in the bottom of the second exhaust region E2, which is in communication with the reaction gas supply region P2. The first exhaust port 313a and the second exhaust port 313b are connected to an exhaust device (not shown) via exhaust piping (not shown).

[0021] The transfer port 314 is provided in a sidewall of the processing vessel 311 (FIG. 2). Through the transfer port 314, the substrate W is transferred between the rotary table 321 in the processing vessel 311 and a transfer arm 314a outside the processing vessel 311. The transfer port 314 is opened and closed by a gate valve (not shown).

[0022] The heating section 315 includes a fixed shaft 315a, a heater support section 315b, a heater 315c, a seal section 315d, cover members 315e and 315f, and gap adjustment members 315g to 315i (FIGS. 1 and 3).

[0023] The fixed shaft 315a has a cylindrical shape centered on the central axis AX of the processing vessel 311. The fixed shaft 315a is provided inside an orbital axis 323 (described later) and penetrates a bottom plate 311d of the processing vessel 311.

[0024] The heater support part 315b is installed on the fixed shaft 315a. The heater support part 315b has a disk shape and supports the heater 315c. The heater support part 315b is provided closer to the central axis AX of the processing vessel 311 than the main body 311a, with a gap G1 between it and the main body 311a. The gap G1 has an annular shape in a plan view and forms an orbit around which the rotation shaft 321b and the connection part 321d (described later) rotate. The width of the gap G1 is set so that the rotation shaft 321b and the connection part 321d do not come into contact with the main body 311a and the heater support part 315b when they rotate.

[0025] The heater 315c is provided on the main body 311a and the heater support portion 315b. The heater 315c generates heat when power is supplied from a power supply (not shown), and heats the substrate W.

[0026] The seal portion 315d is provided between the outer peripheral wall of the fixed shaft 315a and the inner peripheral wall of the revolution shaft 323. This allows the revolution shaft 323 to rotate relative to the fixed shaft 315a while maintaining an airtight state inside the processing vessel 311. The seal portion 315d includes, for example, a magnetic fluid seal.

[0027] The covering member 315e includes a side portion 315e1 and a lid portion 315e2. The side portion 315e1 is installed on and along the outer edge of the heater support portion 315b, straddling the source gas adsorption region P1, the reaction gas supply region P2, and the separation region D. The side portion 315e1 has a cylindrical shape with approximately the same outer diameter as the heater support portion 315b. The lid portion 315e2 is installed on the side portion 315e1. The lid portion 315e2 has a disk shape with approximately the same outer diameter as the side portion 315e1. The covering member 315e covers the heater 315c on the heater support portion 315b with the side portion 315e1 and the lid portion 315e2. This prevents the heater 315c on the heater support portion 315b from being exposed to the source gas and the reactive gas discharged from the source gas nozzle 312a and the reactive gas nozzle 312b, respectively, and flowing below the turntable 321.

[0028] A purge gas supply pipe (not shown) for purging the region A2 covered by the cover member 315e is provided in the region A2. A through-hole 315e3 is formed in the center of the cover member 315e2 (FIGS. 4 to 7). The purge gas supplied from the purge gas supply pipe into the region A2 increases the pressure at the center of the processing vessel 311, where the source gas adsorption region P1 and the reactive gas supply region P2 are closest. This separates the source gas and the reactive gas at the center of the processing vessel 311.

[0029] The through-hole 315e3 includes a small diameter portion 315e4 and a large diameter portion 315e5, as shown in FIG. 4, for example. The small diameter portion 315e4 has a circular shape centered on the central axis AX of the processing vessel 311 in a plan view. The large diameter portion 315e5 is formed above the small diameter portion 315e4 and has a larger circular shape centered on the central axis AX of the processing vessel 311 in a plan view. Also, as shown in FIG. 5, for example, a ring-shaped attachment 315e7 may be installed on a step 315e6 formed between the small diameter portion 315e4 and the large diameter portion 315e5 to narrow the inner diameter of the large diameter portion 315e5. Also, as shown in FIG. 6, for example, a ring-shaped attachment 315e8 may be installed on the step 315e6 to narrow the inner diameter of the large diameter portion 315e5 to make it the same as the inner diameter of the small diameter portion 315e4. 7, for example, an annular attachment 315e9 that narrows the inner diameters of the small-diameter portion 315e4 and the large-diameter portion 315e5 may be installed on the step 315e6. In this way, by changing the inner diameter of the through-hole 315e3 using the attachments 315e7 to 315e9, the flow rate of the purge gas that passes through the through-hole 315e3 and flows out of the region A2 can be adjusted. As a result, even when the process conditions are different or there is an influence due to changes over time, the source gas and the reactive gas can be prevented from accumulating at the center of the turntable 321.

[0030] The covering member 315f includes an inner portion 315f1, an outer portion 315f2, and a lid portion 315f3. The inner portion 315f1 is installed on the inner edge of the main body 311a, along the inner edge, straddling the source gas adsorption region P1, the reactive gas supply region P2, and the separation region D. The inner portion 315f1 has a cylindrical shape. The outer portion 315f2 is installed on the main body 311a outside the position where the inner portion 315f1 is installed, straddling the source gas adsorption region P1, the reactive gas supply region P2, and the separation region D. The outer portion 315f2 has a cylindrical shape with an inner diameter larger than the outer diameter of the inner portion 315f1. The lid portion 315f3 is installed on the inner portion 315f1 and the outer portion 315f2. The lid portion 315f3 has an annular plate shape with an inner diameter substantially the same as that of the inner portion 315f1 and an outer diameter larger than that of the outer portion 315f2. The covering member 315f covers the heater 315c on the main body 311a with the inner portion 315f1, the outer portion 315f2, and the lid portion 315f3. This prevents the heater 315c on the main body 311a from being exposed to the source gas and the reactive gas discharged from the source gas nozzle 312a and the reactive gas nozzle 312b, respectively, and flowing below the turntable 321.

[0031] The gap adjustment member 315g is a plate-like member installed on the lid portion 315e2 in the separation region D. The gap adjustment member 315g has a fan-shaped planar shape with an arc-shaped top, with the inner arc connected to the gap adjustment member 315i and the outer arc aligned along the outer edge of the lid portion 315e2. The gap adjustment member 315g is installed on the lid portion 315e2 to narrow the gap between the lower surface of the turntable 321 and the upper surface of the lid portion 315e2. As shown in FIG. 3, for example, the gap adjustment member 315g is installed at a position corresponding to the convex portion 317 and closer to the central axis AX of the processing vessel 311 than the gap G1. The length L1 of the gap between the upper surface of the gap adjustment member 315g and the lower surface of the turntable 321 is, for example, half or less of the length L2 of the gap between the upper surface of the lid portion 315e2 and the lower surface of the turntable 321 (FIG. 4). The gap adjusting member 315g is made of, for example, quartz.

[0032] The gap adjustment member 315h is a plate-like member placed on the lid portion 315f3 in the separation region D. The gap adjustment member 315h has a fan-shaped planar shape with an arc-shaped top, and is disposed so that its inner arc follows the inner edge of the lid portion 315f3 and its outer arc follows the outer arc of the lid portion 315f3. By placing the gap adjustment member 315h on the lid portion 315f3, the gap between the lower surface of the turntable 321 and the upper surface of the lid portion 315f3 is narrowed. As shown in FIG. 3, for example, the gap adjustment member 315h is disposed at a position corresponding to the convex portion 317, on the outer periphery side of the gap G1. The length of the gap between the upper surface of the gap adjustment member 315h and the lower surface of the turntable 321 is, for example, half or less of the length of the gap between the upper surface of the lid portion 315f3 and the lower surface of the turntable 321. The gap adjustment members 315g and 315h are formed of, for example, quartz.

[0033] In this way, by installing the gap adjustment members 315g and 315h on the cover portions 315e2 and 315f3, respectively, the gap between the lower surface of the turntable 321 and the upper surfaces of the cover portions 315e2 and 315f3 is narrowed. As a result, the pressure in the space between the turntable 321 and the cover members 315e and 315f in the separation region D becomes higher than the pressure in the space between the turntable 321 and the cover members 315e and 315f in the source gas adsorption region P1 and the reactive gas supply region P2. Therefore, in the space between the turntable 321 and the cover members 315e and 315f, a gas flow is formed from the separation region D toward the source gas adsorption region P1 and the reactive gas supply region P2. As a result, mixing of the source gas and the reactive gas is suppressed in the space between the turntable 321 and the cover members 315e and 315f, and the generation of particles due to the reaction between the source gas and the reactive gas in the space can be suppressed.

[0034] Gap adjustment member 315g may be formed integrally with lid portion 315e2, and gap adjustment member 315h may be formed integrally with lid portion 315f3. Also, gap adjustment member 315i may be formed integrally with gap adjustment member 315g.

[0035] Cooling section 316 includes fluid flow paths 316a1-316a4, chiller units 316b1-316b4, inlet pipes 316c1-316c4, and outlet pipes 316d1-316d4. Fluid flow paths 316a1-316a4 are formed inside main body 311a, top plate 311b, bottom plate 311d, and heater support section 315b, respectively. Chiller units 316b1-316b4 output temperature-adjusted fluid. The temperature-adjusted fluid output from chiller units 316b1-316b4 circulates through inlet pipes 316c1-316c4, fluid flow paths 316a1-316a4, and outlet pipes 316d1-316d4 in this order. This adjusts the temperatures of main body 311a, top plate 311b, bottom plate 311d, and heater support section 315b. Examples of the temperature control fluid include water and fluorine-based fluids such as Galden (registered trademark).

[0036] The rotary drive device 320 includes a rotary table 321 , a storage box 322 , a revolution shaft 323 , and a motor 324 .

[0037] The rotary table 321 is provided in the processing vessel 311. The rotary table 321 rotates around the central axis AX of the processing vessel 311. The rotary table 321 has, for example, a disk shape and is made of quartz. On the upper surface of the rotary table 321, a plurality of (six in the illustrated example) mounting tables 321a are provided along the rotation direction (circumferential direction) at positions spaced apart from the rotation center of the rotary table 321. The rotary table 321 is connected to the storage box 322 via a connection portion 321d.

[0038] Each mounting table 321a has a disk shape slightly larger than the substrate W and is made of, for example, quartz. The substrate W is placed on each mounting table 321a. Each mounting table 321a is connected to a motor 321c via a rotation shaft 321b and a drive transmission mechanism 321e.

[0039] The rotation shaft 321b extends upward from within the storage box 322, penetrating the ceiling 322b, and then extends through the gap G1 to the underside of the mounting table 321a. The upper end of the rotation shaft 321b is connected to the underside of the mounting table 321a, and the lower end is connected to the motor 321c via the drive transmission mechanism 321e. This allows the rotation shaft 321b to transmit the power of the motor 321c to the mounting table 321a. When the motor 321c rotates, the rotation shaft 321b rotates via the drive transmission mechanism 321e, and the mounting table 321a rotates relative to the turntable 321 in response to the rotation of the rotation shaft 321b, causing the substrate W to rotate. When the mounting table 321a rotates relative to the turntable 321 in this manner, the turntable 321 and the mounting table 321a may come into contact with each other as the mounting table 321a rotates, generating particles. Therefore, in order to suppress the generation of particles, a gap G2 is provided between the rotary table 321 and the mounting table 321a.

[0040] A plurality of rotation shafts 321b are provided along the circumferential direction of the turntable 321, corresponding to the mounting tables 321a. Each rotation shaft 321b rotates the corresponding mounting table 321a relative to the turntable 321. The plurality of rotation shafts 321b are arranged on the same circumference centered on the central axis AX of the processing vessel 311. A seal 326c is provided in a through-hole in the ceiling 322b of the storage box 322, thereby maintaining an airtight state inside the storage box 322. The seal 326c includes, for example, a magnetic fluid seal.

[0041] The motor 321c rotates the mounting table 321a via the rotation shaft 321b relative to the rotary table 321. The motor 321c may be, for example, a servo motor.

[0042] The connection portion 321d connects the lower surface of the turntable 321 and the upper surface of the storage box 322. A plurality of connection portions 321d are provided along the circumferential direction of the turntable 321. For example, the number of connection portions 321d is the same as the number of rotation shafts 321b (six in the illustrated example). In the illustrated example, the plurality of rotation shafts 321b and the plurality of connection portions 321d are alternately arranged on the same circumference centered on the central axis AX of the processing vessel 311.

[0043] The drive transmission mechanism 321e transmits the power of the motor 321c to the rotation shaft 321b. The drive transmission mechanism 321e includes, for example, a plurality of gears.

[0044] The storage box 322 is provided below the turntable 321 in the processing vessel 311. The storage box 322 is connected to the turntable 321 via a connection part 321d and is configured to be rotatable integrally with the turntable 321. The storage box 322 may be configured to be movable up and down within the processing vessel 311 by a lifting mechanism (not shown). When the storage box 322 is raised and lowered, the turntable 321 and the mounting table 321a are raised and lowered integrally with the storage box 322. This adjusts the distance between the substrate W placed on the mounting table 321a and the source gas nozzle 312a and the reaction gas nozzle 312b. The storage box 322 has a main body part 322a and a ceiling part 322b.

[0045] The main body portion 322a is formed in a concave shape in cross section, and is formed in a ring shape along the rotation direction of the rotary table 321.

[0046] The ceiling portion 322b is provided on the main body portion 322a so as to cover an opening of the main body portion 322a which is formed in a concave shape in cross section. As a result, the main body portion 322a and the ceiling portion 322b form a container portion 322c which is isolated from the inside of the processing vessel 311.

[0047] The accommodation unit 322c is formed in a rectangular shape in a vertical cross section, and is formed in a ring shape along the rotation direction of the turntable 321. The accommodation unit 322c accommodates a motor 321c and a drive transmission mechanism 321e. The main body 322a is formed with a communication unit 322d that communicates the accommodation unit 322c with the outside of the substrate processing apparatus 300. This allows air to be introduced into the accommodation unit 322c from the outside of the substrate processing apparatus 300, cooling the inside of the accommodation unit 322c and maintaining it at atmospheric pressure.

[0048] The revolution shaft 323 is fixed to the bottom of the storage box 322. The revolution shaft 323 is installed to penetrate a bottom plate 311d of the processing vessel 311. The revolution shaft 323 transmits the power of the motor 324 to the turntable 321 and the storage box 322, causing the turntable 321 and the storage box 322 to rotate together. A seal 311f is installed in a through-hole in the bottom plate 311d of the processing vessel 311, thereby maintaining an airtight state inside the processing vessel 311. The seal 311f includes, for example, a magnetic fluid seal.

[0049] A through hole 323a is formed inside the revolution shaft 323. The through hole 323a is connected to the communication part 322d of the housing box 322, and functions as a fluid flow path for introducing air into the housing box 322. The through hole 323a also functions as a wiring duct for introducing power lines and signal lines for driving the motor 321c into the housing box 322. The number of through holes 323a provided is, for example, the same as the number of motors 321c.

[0050] The motor 324 rotates the rotary table 321 and the storage box 322 together with respect to the fixed shaft 315a via the revolution shaft 323. The motor 324 may be, for example, a servo motor.

[0051] The control unit 390 controls each unit of the substrate processing apparatus 300. The control unit 390 may be, for example, a computer. A computer program that controls the operation of each unit of the substrate processing apparatus 300 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0052] [Evaluation results] First, in the substrate processing apparatus 300 of the embodiment, the concentration distribution of the raw material gas on the upper and lower sides of the turntable 321 when the raw material gas is supplied to the raw material gas adsorption region P1 and the separation gas is supplied to the separation region D was calculated by simulation.

[0053] 10(a) shows the source gas concentration distribution on the upper surface side of the turntable 321 when each mounting table 321a is located within one region (source gas adsorption region P1, separation region D, and reaction gas supply region P2). FIG. 10(b) shows the source gas concentration distribution on the upper surface side of the turntable 321 when each mounting table 321a is located across two adjacent regions.

[0054] 10(a), when each mounting table 321a is located in one region, it can be seen that the source gas supplied to the source gas adsorption region P1 remains within the source gas adsorption region P1 on the upper surface side of the turntable 321. Also, as shown in FIG. 10(b), when each mounting table 321a is located across two regions, it can be seen that the source gas supplied to the source gas adsorption region P1 remains within the source gas adsorption region P1 on the upper surface side of the turntable 321.

[0055] Fig. 11(a) shows the concentration distribution of the source gas on the underside of the turntable 321 when each mounting table 321a is located within one region. Fig. 11(b) shows the concentration distribution of the source gas on the underside of the turntable 321 when each mounting table 321a is located across two adjacent regions.

[0056] 11(a), when each mounting table 321a is located in one region, it can be seen that the source gas flowing from the upper surface side to the lower surface side of the turntable 321 through the gap G2 (FIG. 1) remains within the source gas adsorption region P1 on the lower surface side of the turntable 321. Also, as shown in FIG. 11(b), when each mounting table 321a is located across two regions, it can be seen that the source gas flowing from the upper surface side to the lower surface side of the turntable 321 through the gap G2 remains within the source gas adsorption region P1 on the lower surface side of the turntable 321.

[0057] Next, in the substrate processing apparatus 300 of the embodiment, the concentration distribution of the reactive gas on the upper and lower sides of the turntable 321 when the reactive gas is supplied to the reactive gas supply region P2 and the separation gas is supplied to the separation region D was calculated by simulation.

[0058] Fig. 12(a) shows the concentration distribution of the reactant gas on the upper surface side of the turntable 321 when each mounting table 321a is located within one region. Fig. 12(b) shows the concentration distribution of the reactant gas on the upper surface side of the turntable 321 when each mounting table 321a is located across two adjacent regions.

[0059] 12(a), when each mounting table 321a is located in one region, it can be seen that the reactive gas supplied to the reactive gas supply region P2 remains within the reactive gas supply region P2 on the upper surface of the turntable 321. Also, as shown in FIG. 12(b), when each mounting table 321a is located across two regions, it can be seen that the reactive gas supplied to the reactive gas supply region P2 remains within the reactive gas supply region P2 on the upper surface of the turntable 321.

[0060] Fig. 13(a) shows the concentration distribution of the reactant gas on the underside of the turntable 321 when each mounting table 321a is located within one region. Fig. 13(b) shows the concentration distribution of the reactant gas on the underside of the turntable 321 when each mounting table 321a is located across two adjacent regions.

[0061] 13(a), when each mounting table 321a is located in one region, it can be seen that the reactant gas flowing from the upper surface side to the lower surface side of the turntable 321 through the gap G2 (FIG. 1) remains within the reactant gas supply region P2 on the lower surface side of the turntable 321. Also, as shown in FIG. 13(b), when each mounting table 321a is located across two regions, it can be seen that the reactant gas flowing from the upper surface side to the lower surface side of the turntable 321 through the gap G2 remains within the reactant gas supply region P2 on the lower surface side of the turntable 321.

[0062] The above simulation results show that, according to the substrate processing apparatus 300 of the embodiment, the source gas remains in the source gas adsorption region P1 and the reactive gas remains in the reactive gas supply region P2 on both the upper and lower sides of the turntable 321. From these results, it can be said that mixing of the source gas and the reactive gas is suppressed on both the upper and lower sides of the turntable 321.

[0063] In the above embodiment, the source gas is an example of a first process gas, and the source gas adsorption region P1 is an example of a first process region. The reactive gas is an example of a second process gas, and the reactive gas supply region P2 is an example of a second process region. The cover members 315e and 315f and the gap adjustment members 315g, 315h, and 315i are an example of a partition member that partitions the region where the turntable 321 is provided from the region where the heater 315c is provided.

[0064] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0065] In the above embodiment, the case where six mounting tables 321a are provided on the turntable 321 is described, but the present disclosure is not limited to this. For example, the number of mounting tables 321a may be five or less, or seven or more.

[0066] In the above embodiment, the processing unit 310 includes the processing vessel 311, the gas inlet 312, the gas outlet 313, the transfer port 314, the heating unit 315, and the cooling unit 316. However, the present disclosure is not limited to this. For example, the processing unit 310 may further include a plasma generating unit that generates plasma for activating various gases supplied into the processing vessel 311. [Explanation of symbols]

[0067] 300 Substrate processing equipment 311 Processing vessel 315c heater 315e, 315f Covering member 315g~315i Gap adjustment material 321 Rotating Table P1 Source gas adsorption region P2 Reaction gas supply area D separation area

Claims

1. A processing vessel; a rotary table rotatably provided within the processing vessel; a heater provided below the rotary table; a partition member provided between the turntable and the heater with a gap from the lower surface of the turntable, the partition member separating an area where the turntable is provided from an area where the heater is provided; a first processing region to which a first processing gas is supplied onto an upper surface of the rotary table; a second processing region provided at a distance from the first processing region in a circumferential direction of the turntable, to which a second processing gas that reacts with the first processing gas is supplied onto the upper surface of the turntable; a separation region provided between the first processing region and the second processing region in the circumferential direction of the turntable, to which a separation gas for separating the first processing gas and the second processing gas is supplied onto the upper surface of the turntable; Equipped with the partition member is provided so that the gap in at least a part of the separation region is narrower than the gaps in the first processing region and the second processing region. Substrate processing equipment.

2. The partition member is a cover member that is provided across the first processing region, the second processing region, and the separation region and covers the heater; a gap adjusting member disposed on the covering member in the separation region and narrowing the gap; Including, The substrate processing apparatus according to claim 1 .

3. a gap between the upper surface of the gap adjustment member and the lower surface of the rotary table is equal to or less than half of a gap between the upper surface of the cover member and the lower surface of the rotary table; The substrate processing apparatus according to claim 2 .

4. The gap adjustment member has a fan-shaped planar shape. The substrate processing apparatus according to claim 2 or 3.

5. The gap adjustment member is made of quartz. The substrate processing apparatus according to claim 2 .

6. a convex portion protruding toward the rotary table is provided on the lower surface of the top plate of the processing vessel in the separation region; The substrate processing apparatus according to claim 1 .

7. the rotating table is configured to revolve a substrate placed on a mounting table provided on an upper surface side thereof; the rotary table is provided with a rotation shaft on the underside of the rotary table so as to revolve together with the rotary table, the rotation of which rotates the mounting table so that the substrate rotates about its axis; The substrate processing apparatus according to claim 1 .

8. an inert gas is introduced from below the partition member toward the underside of the mounting table during the revolution orbit of the rotation axis; The substrate processing apparatus according to claim 7 .

9. an inert gas is introduced from below the partition member toward the bottom surface of the turntable at the center of the turntable; The substrate processing apparatus according to claim 7 or 8.

Images