Substrate processing apparatus and method for manufacturing film-formed substrate

Abstract

To provide a substrate processing apparatus and a manufacturing method of a film-formed substrate, in which a non-formation film part of a substrate to be formed is removed, a "tool trace" of a substrate to be formed is reduced, or trouble such as fastening with the substrate and a substrate holding part can be cancelled.SOLUTION: A substrate processing apparatus 1A comprises: a reaction container 10; a substrate holding part 30 that is installed into the reaction container, and holds a plurality of substrates 20 so as to be mounted; and a substrate holding part vertical mechanism 40 that contacts and separates the substrate holding part 30 and the plurality of substrates 20 while holding an interval between the adjacent substrates. Also, a manufacturing method of a film-formed substrate, is for holding the plurality of substrates 20 to the substrate holding part 30 in the reaction container so as to be mounted, and vertically moves the plurality of substrates 20 by contacting and separating the substrate holding part 30 and the plurality of substrates 20 while holding the interval of the adjacent substrates.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for uniformly depositing films of various film materials on a portion or the entirety of various substrates, particularly to an apparatus for depositing films one by one on multiple substrate holders while maintaining a distance between adjacent substrates, and a method for manufacturing a substrate with a film using the apparatus. More specifically, the present invention relates to a substrate processing apparatus that can suppress uneven film deposition, the occurrence of thin or undeposited film areas where the substrate contacts the substrate holder, so-called "jig marks," and adhesion between the substrate and the jig when depositing films of various film materials such as SiO2, Si3N4, SiC, amorphous Si, poly-Si, and single-crystal Si on a portion or the entirety of various substrates, including semiconductor substrates such as Si, SiC, GaN, GaAs, and AlN, ferroelectric substrates such as LT and LN, and ceramics such as quartz, Si3N4, AlN, and corundum, and further to a method for manufacturing a substrate with a film using the apparatus. [Background technology]

[0002] Various industrial products, especially semiconductor-related products, are made by depositing films with various functional materials on a part or all of a base substrate, which is then used to create various functional products. For this purpose, substrate processing equipment is used to perform various film deposition processes. These films are formed by supplying various source gases onto the base substrate in the substrate processing equipment, causing a chemical reaction to form the film. Equipment typically has a single-axis rotation mechanism and comes in various styles, such as horizontal types in which the substrate is placed with the axis extending horizontally, or vertical types in which the substrate is placed with the axis extending vertically. Regardless of the method, the most important factors in film formation are usually the uniformity of the film quality and the uniformity of the film thickness. The uniformity of the film quality and the uniformity of the film thickness generally depend on how uniformly and evenly the various source gases can be supplied, mixed, and dispersed around the substrate. Rotation of the deposition substrate is the most effective way to supply, mix, and distribute the source gases uniformly and evenly. However, in horizontal systems, it is difficult to rotate a wafer-shaped substrate while it is held in the substrate holder. At best, the only way to achieve this is to rotate the substrate while firmly clamping its edges. In contrast, in vertical systems, the substrate is placed on the substrate holder and the entire substrate holder is rotated using a rotation mechanism attached to the substrate holder. However, even in these cases, the area where the edge is tightly clamped in the horizontal system or the area where the substrate contacts the jig that holds the substrate on the substrate holder in the vertical system becomes dead space. In either case, it is difficult to ensure a uniform and even supply, mixing, and dispersion of the source gas. This can sometimes result in incomplete distribution of the source gas, resulting in no film formation or, if a film is formed, in a very thin film, known as a "jig mark." Conversely, areas of high source gas concentration can occur around the areas that are tightly clamped or in contact with the jig, resulting in abnormally thick film formation and "sticking" between the substrate and the substrate holder. These problems were considered unavoidable as long as there was contact between the substrate and the substrate holder. These "jig marks" or adhesions on the board can reduce the commercial value of the product, or the surrounding area or sometimes the entire board can become stuck to the jig, making it unusable, which is a major problem in manufacturing, especially in mass production.

[0003] To solve these problems, various methods have been proposed, but none have been completely successful. Patent Document 1 describes a method in which the electromagnetic force of a high-frequency coil is used to levitate the substrate and form a uniform film over the entire surface of the substrate. However, the electromagnetic force used for levitation is relatively small, the equipment is large, the power consumption is high, and the efficiency is extremely low. Patent Document 2 proposes forming microscopic irregularities on the support base using a vapor-deposited film of pyrolytic carbon or SiC, allowing a reactive gas to penetrate between the substrate and the support base, and forming a vapor-deposited film at the contact points between the substrate and the support base. However, this also has the drawback that the contact points are not completely vapor-deposited, resulting in some areas without a vapor-deposited film. Patent Document 3 discloses a method for forming a uniform film by suspending one or more substrates having a through-hole in the center of the substrate by a core rod and continuously moving the substrate. Therefore, this method requires a through-hole, and cannot be applied to semiconductor substrates, which are often used for forming various films, because these substrates do not have a through-hole, making it an extremely limited method with limited shapes. Patent Document 4 describes a method for CVD coating the entire surface of a single substrate, in which the substrate is held on the backside by a support member such as graphite with a pointed tip of about 0.5 mm, and impacts are applied intermittently with a hammer or the like to displace the contact area to some extent while depositing the film. However, because the substrate is held by an extremely thin pointed tip, the intermittent impacts gradually wear the tip as the film deposition progresses, expanding the contact area, scratching the area where a beautiful film has been deposited, or even causing the substrate to fall midway through the process, which has the disadvantage of frequently causing problems such as degrading the properties of the deposited product, lowering its commercial value, or interrupting the film deposition process. In light of the above-mentioned circumstances, current film deposition methods still require inefficient processes, such as temporarily halting film deposition, lowering the reaction temperature, cooling the entire substrate, manually replacing the contact area between the substrate placement jig and the substrate (the so-called "contact area") one by one, evacuating the deposition atmosphere as needed, reheating, confirming that the temperature is constant, and restarting the deposition process. These processes are extremely cumbersome, labor- and energy-intensive, extremely inefficient, and time-consuming, significantly increasing film deposition costs. Furthermore, repeated operations increase the likelihood of contamination of the substrate being deposited, and maintaining a clean environment requires significant effort. While this process is feasible for single or small quantities of multiple substrates, it is difficult to achieve for mass production involving multiple substrates, posing a major bottleneck to the practical application of many functional products. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 50-33184 [Patent Document 2] Japanese Patent Publication No. 124572 / 1983 [Patent Document 3] Japanese Patent Application Laid-Open No. 63-134663 [Patent Document 4] Japanese Patent Application Publication No. 8-100265 Summary of the Invention [Problem to be solved by the invention]

[0005] Therefore, the inventors conducted extensive research with the aim of solving the above problems and achieving mass productivity, in order to establish an apparatus and a film formation method in which (1) multiple substrates are placed on (2) multi-stage substrate holders and (3) films are formed simultaneously, and arrived at the present invention. [Means for solving the problem]

[0006] In order to achieve the above object, the present invention provides the following film formation apparatus. Furthermore, the present invention also establishes a film formation method using this film formation apparatus that eliminates problems such as "jig marks" and adhesion. [1] A substrate processing apparatus comprising: a reaction vessel; a substrate holding unit installed in the reaction vessel and for placing and holding a plurality of substrates; and a substrate holding unit lifting and lowering mechanism for bringing the substrate holding unit into contact with and separating the plurality of substrates from the substrate holding unit while maintaining a distance between adjacent substrates. [2] The substrate processing apparatus according to [1] above, wherein the substrate holder lifting mechanism is a substrate moving unit that places and pushes up the plurality of substrates. [3] The substrate processing apparatus according to [2] above, further comprising a drive mechanism for moving the substrate moving part up and down. [4] The substrate processing apparatus according to any one of [1] to [3] above, further comprising a vibration element that vibrates at least one member of the substrate holder and the substrate holder lifting mechanism. [5] The substrate processing apparatus according to [4], wherein the vibration element is an ultrasonic vibration element that generates vibrations at a frequency of 10 kHz or more. [6] The substrate processing apparatus according to any one of the above [1] to [5], wherein the reaction vessel is provided with a gas inlet and a gas outlet. [7] The substrate processing apparatus according to any one of the above [1] to [6], further comprising a heating device for heating the substrate. [8] The substrate processing apparatus according to any one of the above [1] to [7], further comprising a pump for reducing the pressure in the reaction vessel. [9] The substrate processing apparatus according to any one of [1] to [8] above, wherein the substrate holding unit comprises a plurality of substrate contact units arranged along a circumference centered on an axis.

[10] The substrate processing apparatus according to [9] above, wherein the axis extends in a vertical direction.

[11] The substrate processing apparatus according to [9] or

[10] above, further comprising a substrate holder rotation mechanism that rotates the substrate holder around the axis.

[12] The substrate processing apparatus according to [9] above, wherein the axis extends horizontally.

[13] placing and holding a plurality of substrates on a substrate holder in the reaction vessel; A method for manufacturing a film formation substrate, characterized in that the substrate holding unit and the plurality of substrates are brought into contact with and separated from each other while maintaining a distance between adjacent substrates, thereby moving the plurality of substrates up and down.

[14] The method for producing a film-formed substrate according to

[13] above, characterized in that a reaction gas is introduced into the reaction vessel and a film is formed on the surface of the substrate.

[15] The method for producing a film-formed substrate according to the above

[13] or

[14] , wherein the reaction vessel is evacuated to a reduced pressure to form the film in a reduced pressure vapor phase.

[16] A method for manufacturing a film-formed substrate according to any one of

[13] to

[15] above, characterized in that the plurality of substrates are placed on a plurality of substrate contact portions arranged along a circumference centered on an axis, and the centers of the substrates are aligned with the axis.

[17] The method for manufacturing a film-formed substrate according to

[16] above, wherein the substrate contact portion and the substrate are in contact with each other within a range of 20 mm or less from the outer peripheral edge of the substrate.

[18] The method for manufacturing a film-formed substrate according to the above

[16] or

[17] , wherein the axis extends in a vertical direction.

[19] The method for producing a film-formed substrate according to any one of the above

[16] to

[18] , wherein the substrate holder is rotated around the axis.

[20] The method for manufacturing a film-formation substrate according to the above

[16] or

[17] , wherein the axis extends horizontally. [Effects of the Invention]

[0007] According to the present invention, it is possible to eliminate uncoated portions of a substrate on which a film has been formed, reduce "jig marks" on the substrate on which a film has been formed, or eliminate problems such as adhesion between the substrate and the substrate holder. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram for explaining a substrate processing apparatus according to a first embodiment of the present invention, showing a state in which a substrate is held by a substrate moving part. [Figure 2] FIG. 2 is a diagram for explaining the substrate processing apparatus according to the first embodiment of the present invention, showing a state in which a substrate is held by a substrate holder. [Figure 3] FIG. 3 is a schematic diagram of the substrate holder. [Figure 4] FIG. 4 is a schematic diagram of the substrate mover. [Figure 5] FIG. 5 is a schematic diagram showing a state in which the substrate holding unit and the substrate moving unit are combined. [Figure 6] Figure 6(a) is a side view of a state in which a substrate is held by a substrate moving section in a substrate processing apparatus according to a first embodiment of the present invention, and Figure 6(b) is a top view of a state in which a substrate is held by a substrate moving section in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 7] Figure 7(a) is a side view of a state in which a substrate is held by a substrate contact portion in a substrate processing apparatus according to a first embodiment of the present invention, and Figure 7(b) is a top view of a state in which a substrate is held by a substrate contact portion in a substrate processing apparatus according to a first embodiment of the present invention. [Figure 8] FIG. 8 is a diagram for explaining the substrate processing apparatus according to the first embodiment of the present invention, showing an example of the layout of the lifting base. [Figure 9] FIG. 9 is a diagram for explaining a modified example of the substrate processing apparatus according to the first embodiment of the present invention, in which there are two rotation mechanisms. [Figure 10] Figure 10 is a diagram for explaining a substrate processing apparatus according to a second embodiment of the present invention, where Figure 10(a) is a diagram showing a state in which a substrate is held by a substrate holding unit, and Figure 10(b) is a diagram showing a state in which a substrate is held by a substrate moving unit. DETAILED DESCRIPTION OF THE INVENTION

[0009] [First embodiment] (Substrate processing equipment) A substrate processing apparatus according to a first embodiment of the present invention will be described with reference to Figures 1 to 7. As shown in Figures 1 and 2, a substrate processing apparatus 1A according to the first embodiment of the present invention includes a reaction vessel 10, a substrate holding unit 30 that is installed in the reaction vessel 10 and that places and holds a plurality of substrates 20, and a substrate holding unit lifting / lowering mechanism 40 that brings the substrate holding unit 30 into contact with and separates the plurality of substrates 20 while maintaining a distance between adjacent substrates. The substrate holding unit lifting / lowering mechanism 40 is preferably a substrate moving unit 40 that places and pushes up the plurality of substrates 20.

[0010] As shown in FIG. 3, the substrate holding unit 30 has a plurality of substrate contact portions 31 arranged along a circumference centered on the axis Z. The axis Z extends in the vertical direction. As shown in FIG. 4, the substrate moving unit 40 also has a plurality of substrate contact portions 41 arranged along a circumference centered on the axis Z. As shown in FIG. 5, the recesses 34 in the disc portion 33 of the substrate holding unit 30 engage with the support posts 43 of the substrate moving unit 40. As a result, when the substrate holding unit 30 is rotated around the axis Z, the substrate moving unit 40 also rotates around the axis Z. Note that the substrate contact portions 31 of the substrate holding unit 30 and the substrate contact portions 41 of the substrate moving unit 40 are omitted in FIG. 5 for clarity.

[0011] As shown in FIGS. 1 and 2, the substrate processing apparatus 1A further includes a substrate holder rotation mechanism 70 that rotates the substrate holder 30 around the Z axis.

[0012] As shown in FIGS. 1 and 2, the substrate holder lifting mechanism 40 is preferably a substrate moving unit 40 that places a plurality of substrates 20 on it and pushes them up.

[0013] As shown in FIGS. 1 and 2, the substrate processing apparatus 1A includes a drive mechanism 50 that moves the substrate moving part 40 up and down.

[0014] As shown in FIGS. 1 and 2, the reaction vessel 10 is provided with a gas inlet 11 and a gas outlet 12.

[0015] As shown in FIGS. 1 and 2, the substrate processing apparatus 1A further includes a heating device 60 for heating the substrate 20.

[0016] The substrate processing apparatus 1A further includes a pump (not shown) for reducing the pressure in the reaction vessel .

[0017] The substrate processing apparatus 1A further includes a vibration element (not shown) that vibrates at least one of the substrate holder 30 and the substrate holder lifting mechanism 40. The vibration element is preferably an ultrasonic vibration element that generates vibrations at a frequency of 10 kHz or higher.

[0018] (Method of manufacturing a film-formed substrate) The method for manufacturing a film-formed substrate according to the first embodiment of the present invention is characterized in that a plurality of substrates 20 are placed and held on a substrate holding portion 30 in a reaction vessel 10, and the substrates are raised and lowered by bringing the substrate holding portion 30 into contact with and separating the plurality of substrates 20 while maintaining a distance between adjacent substrates.

[0019] In the method for manufacturing a film-formed substrate according to the first embodiment of the present invention, a reactive gas is introduced into the reaction vessel 10, and a film is formed on the surface of the substrate.

[0020] In the method for manufacturing a film-formed substrate according to the first embodiment of the present invention, the reaction vessel 10 is evacuated to a reduced pressure to perform reduced pressure vapor deposition of a film.

[0021] In the method for manufacturing a film formation substrate according to the first embodiment of the present invention, a plurality of substrates 20 are placed on a plurality of substrate contact parts 31 arranged along a circumference centered on axis Z, and the substrates 20 are aligned so that their centers are aligned with axis Z. By driving the substrate holder rotation mechanism 70, axis Z extends in the vertical direction. The substrate holders 30 are rotated around axis Z.

[0022] The substrate contact portion 31 and the substrate 20 are in contact within a range of 20 mm or less from the outer peripheral edge of the substrate 20 .

[0023] The following describes in detail the substrate processing apparatus 1A and the method for manufacturing a film-formed substrate according to the first embodiment of the present invention, taking as an example the film formation process that is a preliminary step in fabricating a GaN epitaxial substrate on an 8-inch φ AlN ceramic substrate (725 μm thick). Because AlN ceramic substrates have a thermal expansion coefficient similar to that of GaN, they are often chosen as base substrates. After sealing (described below), a seed substrate is bonded to the substrate to fabricate a GaN epitaxial substrate. However, the ceramics used for the base substrate have low purity, and if used as is, metal impurities in the ceramics will diffuse, adversely affecting the subsequent epitaxial film. To prevent this, it is essential to completely encase the AlN ceramic substrate in various films, such as SiO2 or Si3N4, to completely seal it.

[0024] As shown in FIGS. 1 and 2, the substrate processing apparatus 1A includes a reaction vessel 10 having a gas inlet 11 and a gas outlet 12, a pump (not shown), a heating device 60 capable of heating up to 1300°C, a substrate holder 30 capable of holding eight substrates 20, and a substrate moving unit 40. The substrate holder 30 is rotated at a rotational speed of 10 rpm by a substrate holder rotation mechanism 70. Meanwhile, the substrate moving unit 40 rotates in conjunction with the substrate holder 30. A vertical member 50 (driving mechanism 50) applies vertical movement to the substrate moving unit 40. Specifically, as shown in FIG. 8, the vertical member 50, which is the driving mechanism 50, can push up the substrate moving unit 40 with a convex portion 51 to load multiple substrates 20 onto the substrate moving unit 40 (see FIGS. 1 and 6), and can lower the substrate moving unit 40 with a flat portion 52 to load multiple substrates 20 onto the substrate holder 30 (see FIGS. 2 and 7). Even though the upper and lower members 50 have the convex portions 51 and the flat portions 52, the bearings 90 allow the upper and lower members 50 to rotate.

[0025] <Setting the circuit board> The inside of the reaction vessel 10 is heated in advance to a temperature close to the temperature at which the reaction process will occur by the heating device 60. The heating device 60 is disposed outside the reaction vessel 10 so as to surround the reaction vessel 10, and is controlled by commands from a control unit (not shown) so that the inside of the reaction vessel 10 will be at a constant temperature.

[0026] The substrate placement unit, which includes the heat insulating material 80, substrate holding unit 30, substrate moving unit 40, and drive mechanism 50, can be vertically separated from the reaction vessel 10. By doing so, removing the substrate placement unit from the reaction vessel 10 allows a substrate loading means (not shown) to access the substrate holding unit 30. It is also possible to manually load the substrate 20 into the substrate holding unit 30 without using the substrate loading means. While the reaction vessel 10 and the substrate placement unit are vertically separated from each other when setting the substrate, other methods are also possible, such as horizontal separation, opening and closing a door, or opening and closing a gate valve. The base of the substrate placement unit is not limited to the heat insulating material 80, and may be made of other materials such as a metal flange or a ceramic flange.

[0027] A substrate loading means (not shown) places multiple substrates 20 on the holding claws 31, which are the substrate contact portions 31 of the substrate holding unit 30, while maintaining a gap between adjacent substrates. It is preferable that the holding claws 31 and the substrate 20 come into contact within a range of 20 mm or less from the outer circumferential edge of the substrate 20. In addition to placing the substrates on the holding claws 31 of the substrate holding unit 30, the substrates can also be placed on the moving claws 41, which are the substrate contact portions 41 of the substrate moving unit 40. It is preferable that the holding claws 41 and the substrate 20 come into contact within a range of 20 mm or less from the outer circumferential edge of the substrate 20. It is also possible to place the substrates 20 on devices other than those shaped like claws. Furthermore, the position where the substrate 20 is placed is not limited to the rear edge of the plate-like substrate.

[0028] After the mounting is completed, the substrate mounting part is inserted vertically relative to the reaction vessel 10, and a reaction vessel seal part (not shown) blocks the passage of gas between the inside and outside of the reaction vessel 10.

[0029] As the temperature of the substrate 20 in the reaction vessel 10 rises to the target temperature, the reaction vessel is evacuated by a pump (not shown) until the degree of vacuum within the reaction vessel reaches the process vacuum. Examples of the pump (not shown) include a dry pump, a rotary pump, and a turbomolecular pump. The reaction vessel 10 is evacuated by using a pump and opening and closing a valve. Note that the pump does not have to be one of the above, and other means such as a combination of these or a cryopump may also be used.

[0030] The heating device 60 is not limited to being disposed outside the reaction vessel 10 so as to surround the reaction vessel 10. For example, the heating device 60 may be a heating device that heats using infrared rays or a heating device that heats using microwaves.

[0031] It should be noted that vacuum and heating are not essential for the reaction process. Other atmospheric pressure processes or ambient temperature processes are also possible. The order of pressurization and heating may be other than those described above.

[0032] <Film formation process> As described above, the vertical member 50 (drive mechanism 50) can push up the substrate moving part 40 with the convex part 51 so that multiple substrates 20 can be placed on the substrate moving part 40, and can lower the substrate moving part 40 with the flat part 52 so that multiple substrates 20 can be placed on the substrate holding part 30. The method for performing such vertical movement does not have to be the method using the vertical member 50 and bearing 90, but can also be a vertical mechanism using a cam, cylinder, vertical motor, or the like. Furthermore, the bearing 90 does not have to be spherical. Furthermore, the bearing 90 does not have to be fixed to the installation location.

[0033] <Alternating operation of the substrate support part> The substrate holder 30 is rotated by a substrate holder rotation mechanism 70 that is connected so that the substrate holder 30 rotates around the axis Z.

[0034] The support posts 43 of the substrate moving part 40 are engaged with the recesses 34 of the disk part 33 of the substrate holding part 30 (see FIGS. 5 to 7) so that the substrate moving part 40 is interlocked with the substrate holding part 30 in rotational movement about the axis Z, and is installed so that it can move back and forth relative to the substrate holding part 30 in vertical movement. Alternatively, as shown in FIG. 9, the substrate holding part 30 may be rotated by a substrate holding part rotation mechanism 70, and the substrate moving part 40 may be rotated by a substrate moving part rotation mechanism 70A and a rotation transmission mechanism 71A.

[0035] The substrate moving part bottom plate 50, which is one end face in the axial direction of the substrate moving part 40, functions as an upper and lower member 50 (drive mechanism 50). The substrate moving part bottom plate 50 is provided with a convex portion 51 and a flat portion 52 that are generated in the upper and lower directions of the axis Z during a partial period of rotational movement of the substrate moving part 40 along a circumference centered on the axis Z (see FIG. 8). Opposite the substrate moving part bottom plate 50, a spherical bearing 90, which is fixed in place but rotates freely by itself, is installed on a heat insulating material 80 that serves as the base of the substrate placement part.

[0036] While the substrate moving part 40 and the substrate holding part 30 engaged therewith for interlocking rotation are rotated by the substrate holding part rotation mechanism 70, the portions of the substrate moving part bottom plate 50 that contact the bearing 90 alternate between portions with convex portions 51 and portions with flat portions 52, and accordingly the substrate moving part 40 repeatedly moves up and down relative to the substrate holding part 30. In FIG. 8(b), the convex portions 51 and flat portions 52 of the substrate moving part bottom plate 50 are set so that the substrate moving part 40 rises and falls in the same amount of time. However, this is not limited to this, and the rise time can be set longer or shorter than the fall time (see FIG. 8(c)). This can be freely changed by changing the arrangement of the convex portions 51 and flat portions 52. The height of the up and down movement and the number of convex portions 51 can also be changed by changing the setting of the convex portions 51.

[0037] While the substrate moving section 40 is descending, the substrate 20 is placed on the holding claw section 31 of the substrate holding section 30, as shown in Figure 7, but while the substrate moving section 40 is ascending, the substrate 20 is transferred to the moving claw section 41 of the substrate moving section 40, as shown in Figure 6, and these periods are repeated alternately in accordance with the up and down movement of the substrate moving section 40 due to the arrangement of the convex section 51 and flat section 52 of the substrate moving section bottom plate 50.

[0038] <Reaction process (film formation)> As described above, the reaction vessel 10 is brought to the desired vacuum level and temperature, and the substrate moving unit 40 is moved up and down while rotating the substrate holding unit 30, and process gas is introduced into the reaction vessel 10.

[0039] The process gas is introduced through a gas inlet 11 so as to be distributed throughout the reaction vessel, and is discharged through a gas outlet 12. By balancing the amount of gas introduced and the amount of gas discharged, the process pressure inside the reaction vessel can be adjusted to the desired value.

[0040] The process gas is converted into precursors such as ions and radicals at high temperatures in a vacuum, and some of these precursors adhere to the surfaces of the substrates 20 placed thereon to form films.

[0041] At this time, the precursors cannot momentarily reach the substrate surface at the substrate contact portions of the holding claws 31 or moving claws 41 on which the substrate 20 is placed, and therefore cannot contribute to film formation during the period of contact at those portions. However, as the substrate holding unit 30 and the substrate moving unit 40 rotate using the substrate holding unit rotation mechanism 70, the substrate moving unit 40 moves up and down relative to the substrate holding unit 30, and the holding claws 31 and the moving claws 41 alternately come into contact with the substrate 20, allowing the precursors of the reactive gas to enter between the claw that is not in contact and the substrate, thereby contributing to film formation.

[0042] In the conventional method in which the substrate is always placed on the claws in the same place while the process gas is being introduced, no film is formed at the contact point between the substrate and the claws. However, in the substrate processing apparatus 1A of the first embodiment of the present invention, the contact point of the substrate 20 alternates between the holding claws 31 and the movable claws 41, making it possible to form a film over the entire substrate according to the cycle.

[0043] It is also possible to vibrate the substrate holding unit 30 or the substrate moving unit 40 during the film formation process. Although not shown, by applying ultrasonic vibrations to either or both of the substrate holding unit 30 and the substrate moving unit 40, a small gap can be formed between the claws 31, 41 and the substrate 20 while the holding claws 30 and the moving claws 40 are supporting the substrate, allowing the precursors of the process gas to contribute to the film formation reaction. This improves the uniformity of the film formed on the surface of the substrate 20.

[0044] The gas inlet 11 is not limited to the opening of the heat insulating material 80, but may be introduced from the middle or upper part of the reaction vessel 10 in the height direction through an inlet pipe or the like. Alternatively, the reaction vessel 10 may have a double structure, and the gas may be introduced through the gap between the double structure.

[0045] Furthermore, in the substrate processing apparatus 1A of the first embodiment, the holding claw portion 31 and the moving claw portion 41 that hold the substrate 20 are alternately switched by moving the substrate moving portion 40 up and down, but it is also possible to move the substrate holding portion 30 up and down, or to move both the substrate moving portion 40 and the substrate holding portion 30 up and down.

[0046] Furthermore, instead of alternately moving two jigs, the substrate moving unit 40 and the substrate holding unit 30, it is also possible to use multiple substrate holding units 30, or to arrange multiple substrate moving units 40 so that three or more claws alternately contact the substrate. In this case, the proportion of time that one claw holds the substrate is reduced, which reduces the impact of the proportion of time that the precursor does not contribute due to contact, making it possible to form a more uniform film on the substrate surface.

[0047] The source of the vibration is not limited to an ultrasonic vibrator, but may be vibration caused by the introduction of a dilution gas or physical vibration caused by a vibrator or the like.

[0048] (Modification of the first embodiment) Like the substrate moving unit, the substrate holding unit may also be configured to move up and down. For example, the moment the moving claws of the substrate moving unit come into contact with the substrate placed on the substrate holding unit, the rising of the substrate moving unit is stopped. The substrate holding unit is then lowered. After a predetermined time has elapsed, the substrate holding unit is raised, and the moment the holding claws of the substrate holding unit come into contact with the substrate placed on the substrate moving unit, the rising of the substrate holding unit is stopped. The substrate moving unit is then lowered. Even if this operation is repeated, the substrate does not move up and down but is held at the same height. This allows film formation on the substrate while the substrate is held at the same height. In this case, a substrate holding unit lifting / lowering mechanism that brings the substrate holding unit into contact with and separates the substrate while maintaining a gap between adjacent substrates is realized by a combination of the substrate holding unit and the substrate moving unit.

[0049] [Second embodiment] The substrate processing apparatus and the method for manufacturing a film-formed substrate according to the second embodiment of the present invention will be described below, focusing mainly on the differences from the substrate processing apparatus and the method for manufacturing a film-formed substrate according to the first embodiment of the present invention.

[0050] (Substrate processing equipment) In the substrate processing apparatus 1A and the method for manufacturing a film-formed substrate according to the first embodiment of the present invention, the axis Z extends vertically. However, in the substrate processing apparatus 1B and the method for manufacturing a film-formed substrate according to the second embodiment of the present invention, the axis Y extends horizontally, as shown in FIG.

[0051] The substrate processing apparatus 1B according to the second embodiment of the present invention is an example of a horizontal furnace. As shown in FIG. 10 , the substrate processing apparatus 1B according to the second embodiment of the present invention differs from the substrate processing apparatus 1A according to the first embodiment of the present invention in the way that the substrates 20 are held. The reaction vessel 10 is equipped with a source gas inlet 11, a gas outlet 12, a pump (not shown), and eight substrates 20. As shown in FIG. 10 , the lower rotation shaft 100 rotates at 3 rpm while an eccentric cam 110 alternately places and holds the substrate holders 30 and the substrate mover 40. The eccentric cam 110 of the rotation shaft 100 is a drive mechanism that operates in conjunction with the rotation shaft and alternately moves the substrate mover 40. The eccentric cam 110 alternately drives the substrate holders 30 and the substrate mover 40 as shown in FIG. 10 . Each substrate holder 30 alternately holds eight substrates 20, and the substrate holders 30 are switched by the up and down movement of the eccentric cam 110.

[0052] Compared to the substrate processing apparatus 1A of the first embodiment, the substrate processing apparatus 1B of the second embodiment has a horizontal furnace configuration, and the substrate is supported not by a claw portion but by the supports 32, 42 of the substrate holding portion 30 and the substrate moving portion 40.

[0053] Furthermore, in the substrate processing apparatus 1A of the first embodiment, the alternating movement of the substrate support section involves rotating the substrate holding section 30 and the substrate moving section 40 to raise and lower the contact position with the bearing 90 of the upper and lower member 50, thereby performing relative up and down movement to alternately switch support of the substrate 20 between the holding claw section 31 and the moving claw section 41. However, in the substrate processing apparatus 1B of the second embodiment, the up and down movement position of the substrate holding section 30 is fixed, and the substrate moving section 40 is moved up and down alternately using an eccentric cam 110 by rotating the rotation shaft caused by the drive mechanism 70B.

[0054] As a result, the substrate holder 30 and the support columns 32, 42 of the substrate moving section 40 that support the substrate 20 are alternately switched, and the same effect as that of the substrate processing apparatus 1A of the first embodiment is achieved.

[0055] In the substrate processing apparatus 1B of the second embodiment, the contact points between the substrate moving unit 40 and the substrate holding unit 30 and the substrate 20 are alternately switched, but instead of the alternating movement of the two jigs, the substrate moving unit 40 and the substrate holding unit 30, it is also possible to alternate three or more contact points by using multiple substrate holding units or arranging multiple substrate moving units. In this case, the proportion of time held at one contact point is reduced, and the influence of the proportion of time when the precursor does not contribute due to contact is reduced, making it possible to form a more uniform film on the substrate surface.

[0056] Furthermore, although the substrate processing apparatus 1B of the second embodiment is not provided with a heating device, it may be provided with a heating device in the same manner as the substrate processing apparatus 1A of the first embodiment.

[0057] The substrate processing apparatus 1A of the first embodiment of the present invention and the substrate processing apparatus 1B of the second embodiment of the present invention are examples of the substrate processing apparatus of the present invention. Therefore, the substrate processing apparatus of the present invention is not limited to the substrate processing apparatus 1A of the first embodiment of the present invention and the substrate processing apparatus 1B of the second embodiment of the present invention.

[0058] The method for manufacturing a film-formed substrate according to the first embodiment of the present invention and the method for manufacturing a film-formed substrate according to the second embodiment of the present invention are examples of the method for manufacturing a film-formed substrate according to the present invention. Therefore, the method for manufacturing a film-formed substrate according to the present invention is not limited to the method for manufacturing a film-formed substrate according to the first embodiment of the present invention and the method for manufacturing a film-formed substrate according to the second embodiment of the present invention. [Explanation of symbols]

[0059] 1A, 1B Substrate processing equipment 10 Reaction vessel 20 Substrate 30 Board holding part 31 Board contact part (holding claw part) 32,42,43 Post 33 Disc section 34 Recess 40 Substrate holder up / down mechanism (substrate moving part) 41 Circuit board contact part (moving claw part) 50 Drive mechanism (upper and lower members, substrate moving part bottom plate) 51 Convex part 52 Flat area 60 Heating device 70 Substrate holder rotation mechanism 70A Substrate moving part rotation mechanism 71,71A Rotating Seal 72A Rotation Transmission Mechanism 80 Insulation 90 bearings 100 Lower Rotating Axis 110 Eccentric Cam 120 bearing

Claims

1. a reaction vessel, a substrate holder that is installed in the reaction vessel and that holds a plurality of substrates; and a substrate holder lifting mechanism that brings the substrate holder into contact with and separates the plurality of substrates while maintaining a distance between adjacent substrates; A substrate processing apparatus comprising: the substrate holder lifting mechanism is a substrate moving unit that places and lifts up the plurality of substrates; the substrate holding portion includes a plurality of substrate contact portions arranged along a circumference centered on an axis; The substrate processing apparatus includes a substrate holder rotation mechanism that rotates the substrate holder around the axis; Further, a drive mechanism for moving the substrate moving unit up and down is provided, The substrate processing apparatus is characterized in that the drive mechanism moves the substrate moving part up and down once or a plurality of times each time the substrate holding part makes one rotation.

2. 2. The substrate processing apparatus according to claim 1, wherein the reaction vessel is provided with a gas inlet and a gas outlet.

3. 3. The substrate processing apparatus according to claim 1, further comprising a heating device for heating the substrate.

4. 4. The substrate processing apparatus according to claim 1, further comprising a pump for reducing the pressure in the reaction vessel.

5. A plurality of substrates are placed and held on a substrate holder in the reaction vessel; moving the substrates up and down by bringing the substrate holder into contact with and separating the substrates while maintaining a distance between adjacent substrates; The plurality of substrates are placed on a plurality of substrate contact portions arranged along a circumference centered on an axis line, and the centers of the substrates are aligned with the axis line; Rotating the substrate holder around the axis; A method for manufacturing a film-formed substrate, characterized in that the substrate is moved up and down once or multiple times each time the substrate holder makes one rotation.

6. 6. The method for manufacturing a film-formed substrate according to claim 5, wherein a reaction gas is introduced into the reaction vessel and a film is formed on the surface of the substrate.

7. 7. The method for manufacturing a film-formed substrate according to claim 5, wherein the reaction vessel is evacuated to a reduced pressure to form the film by vapor phase growth.

8. 8. The method for manufacturing a film-formed substrate according to claim 5, wherein the substrate contact portion and the substrate are in contact with each other within a range of 20 mm or less from the outer peripheral edge of the substrate.

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