Modular mainframe layout for supporting multiple semiconductor process modules or chambers

Abstract

Methods and apparatus for bonding chiplets to substrates are provided herein. In some embodiments, a multi-chamber processing tool for processing substrates includes a front-end equipment module (EFEM) having one or more load ports for receiving one or more types of substrates, and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM. Each of the plurality of automation modules includes a transfer chamber and one or more process chambers coupled to the transfer chamber. The transfer chamber includes a buffer configured to hold a plurality of the one or more types of substrates. The transfer chamber includes a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and the buffer located in adjacent automation modules of the plurality of automation modules.

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment. [Background technology]

[0002]

[0002] Substrates undergo various processes during the manufacture of semiconductor integrated circuit devices. Some of these processes include wafer dicing. In wafer dicing, a processed wafer is placed on a dicing tape and cut or separated into multiple dies or chiplets. Once the wafer is diced, the chiplets typically remain on the dicing tape until they are detached and bonded to a substrate. Conventional processing tools for cleaning, dicing, and bonding chiplets to a substrate typically include multiple tools or a single linear robot housed within a mainframe. Several chambers or process modules may be coupled to the mainframe, which may generally determine the length of the mainframe and the single linear robot. However, tools with a single linear robot housed within a mainframe have limited scalability and processing throughput.

[0003]

[0003] Accordingly, the inventors have provided an improved multi-chamber processing tool for processing substrates. Summary of the Invention

[0004]

[0004] Methods and apparatus for processing substrates herein In some embodiments, a multi-chamber processing tool for processing substrates includes a front-end equipment module (EFEM) having one or more load ports for receiving one or more types of substrates, and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM. Each of the plurality of automation modules includes a transfer chamber and one or more process chambers coupled to the transfer chamber. The transfer chamber includes a buffer configured to hold a plurality of the one or more types of substrates. The transfer chamber includes a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and the buffer located in an adjacent one of the plurality of automation modules.

[0005] In some embodiments, a multi-chamber processing tool for processing substrates includes a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM, the plurality of automation modules including one or more first load ports for receiving a first type of substrate, one or more second load ports for receiving a second type of substrate having a plurality of chiplets, an EFEM having an EFEM robot configured to transfer the first type of substrate and the second type of substrate. Each of the plurality of automation modules includes a transfer chamber and at least one of a wet clean chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonder chamber coupled to the transfer chamber. The transfer chamber includes a buffer configured to hold one or more of the first type of substrates and one or more of the second type of substrates. The transfer chamber includes a transfer chamber robot configured to transfer the first type of substrate and the second type of substrate between the buffer, one or more process chambers, and a buffer located in an adjacent automation module of the plurality of automation modules. wherein one or more process chambers of a first automation module of the plurality of automation modules include at least one of a plasma chamber or a degassing chamber and a wet cleaning chamber; a second automation module of the plurality of automation modules coupled to the first automation module includes at least one of a plasma chamber or a degassing chamber; and a third automation module of the plurality of automation modules coupled to the second automation module includes one or more bonder chambers configured to remove a plurality of chiplets from a second type of substrate and bond the plurality of chiplets onto a first type of substrate.

[0006] In some embodiments, a method for bonding a plurality of chiplets onto a substrate includes loading a first type of substrate onto a first load port of a front-end equipment module (EFEM) of a multi-chamber processing tool having a plurality of automated modules; using an EFEM robot to transfer a first type of substrate to a first buffer located in a first automation module coupled to the EFEM; Sequentially transferring the first type of substrate from the first buffer to a first wet cleaning chamber to perform a cleaning process, then to a first degassing chamber to perform a degassing process to dry the first type of substrate, then to a first plasma chamber to perform a plasma etching process to remove undesired materials from the first type of substrate, and finally to a bonder chamber; using an EFEM robot to transfer a second type of substrate having a plurality of chiplets to the first buffer; Sequentially transferring the second type of substrate from the first buffer to a second wet cleaning chamber to perform a cleaning process, then to a second degassing chamber to perform a degassing process to dry the second type of substrate, then to a second plasma chamber to perform a plasma etching process to remove undesired materials from the second type of substrate, then to an irradiation chamber to perform an irradiation process to weaken the adhesion between the plurality of chiplets and the second type of substrate, and finally to a bonder chamber; transferring at least some of the plurality of chiplets from a second type of substrate to a first type of substrate in a bonder chamber; and The method includes bonding at least some of the plurality of chiplets to a first type of substrate in a bonder chamber.

[0007] Methods and apparatus for bonding chiplets to substrates herein In some embodiments, a multi-chamber processing tool for processing substrates includes a first Equipment Front End Module (EFEM) having one or more load ports for receiving one or more types of substrates, a second EFEM having one or more load ports for receiving one or more types of substrates on an opposite side of the multi-chamber processing tool from the first EFEM, and a plurality of atmospheric modular mainframes (AMMs) coupled to each other and including a first AMM coupled to the first EFEM and a final AMM coupled to the second EFEM. Each of the plurality of AMMs includes a transfer chamber and one or more process chambers coupled to the transfer chamber. The transfer chamber includes a buffer configured to hold a plurality of one or more types of substrates. The transfer chamber includes a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and the buffer located in an adjacent AMM of the plurality of AMMs.

[0008] In some embodiments, a multi-chamber processing tool for processing a substrate comprises: a first equipment front end module (EFEM) having one or more first load ports for receiving a first type of substrate, one or more second load ports for receiving a second type of substrate having a plurality of chiplets, and an equipment front end module (EFEM) robot configured to transfer the first type of substrate and the second type of substrate; a second EFEM having one or more first load ports for receiving the first type of substrate, one or more second load ports for receiving the second type of substrate having a plurality of chiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; and and a plurality of AMMs coupled to one another, with the AMM coupled to a first EFEM and a final AMM coupled to a second EFEM, each of the plurality of AMMs including a transfer chamber and one or more process chambers including at least one of a wet clean chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonder chamber coupled to the transfer chamber, the transfer chamber including a buffer configured to hold one or more of the first type of substrates and one or more of the second type of substrates. The transfer chamber includes a transfer robot configured to transfer first type substrates and second type substrates between a buffer, one or more process chambers, and buffers located in adjacent AMMs of the plurality of AMMs, wherein the one or more process chambers of a first AMM of the plurality of AMMs include at least one of a plasma chamber or a degassing chamber and a wet clean chamber, a second AMM of the plurality of AMMs coupled to the first AMM includes at least one of a plasma chamber or a degassing chamber, and a third AMM of the plurality of AMMs coupled to the second AMM includes one or more bonder chambers configured to remove a plurality of chiplets from the second type substrate and bond the plurality of chiplets onto the first type substrate.

[0009] In some embodiments, a method for adhering a plurality of chiplets onto a substrate comprises: loading a first type of substrate onto a first load port of an equipment front end module (EFEM) of a multi-chamber processing tool having a plurality of AMMs; using an EFEM robot to transfer a first type of substrate to a first buffer located in a first automation module coupled to the EFEM; Sequentially transferring the first type of substrate from the first buffer to a first wet cleaning chamber to perform a cleaning process, then to a first degassing chamber to perform a degassing process to dry the first type of substrate, then to a first plasma chamber to perform a plasma etching process to remove undesired materials from the first type of substrate, and finally to a bonder chamber; using an EFEM robot to transfer a second type of substrate having a plurality of chiplets to the first buffer; Sequentially transferring the second type of substrate from the first buffer to a second wet cleaning chamber to perform a cleaning process, then to a second degassing chamber to perform a degassing process to dry the second type of substrate, then to a second plasma chamber to perform a plasma etching process to remove undesired materials from the second type of substrate, then to an irradiation chamber to perform an irradiation process to weaken the adhesion between the plurality of chiplets and the second type of substrate, and finally to a bonder chamber; transferring at least some of the plurality of chiplets from a second type of substrate to a first type of substrate in a bonder chamber; bonding at least some of the plurality of chiplets to a first type of substrate in a bonder chamber; and Loading a first type substrate having a plurality of chiplets attached thereto from a final AMM onto a load port of a second EFEM of a multi-chamber processing tool.

[0010]

[0010] Other and further embodiments of the present disclosure are described below.

[0011]

[0011] The embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments of the present disclosure as illustrated in the accompanying drawings. However, because the present disclosure may admit of other equally effective embodiments, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered limiting in scope. [Brief explanation of the drawings]

[0012] [Figure 1]

[0012] A schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate according to at least some embodiments of the present disclosure is shown. [Figure 2]

[0013] FIG. 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate, in accordance with at least some embodiments of the present disclosure. [Figure 3]

[0014] FIG. 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate, in accordance with at least some embodiments of the present disclosure. [Figure 4]

[0015] 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate arranged in a T-shaped configuration, according to at least some embodiments of the present disclosure. [Figure 5]

[0016] 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate arranged in a U-shaped configuration, according to at least some embodiments of the present disclosure. [Figure 6]

[0017] 1 illustrates a second type of substrate, according to at least some embodiments of the present disclosure. [Figure 7]

[0018] FIG. 1 illustrates an isometric view of a simplified automation module or atmospheric modular mainframe, according to at least some embodiments of the present disclosure. [Figure 8]

[0019] 1 shows a flowchart of a method for bonding chiplets to a substrate in accordance with at least some embodiments of the present disclosure. [Figure 9]

[0020] FIG. 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate, in accordance with at least some embodiments of the present disclosure. [Figure 10]

[0021] FIG. 1 shows a schematic top view of a multi-chamber processing tool for bonding chiplets to a substrate, in accordance with at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0013]

[0022] To facilitate understanding, the same reference numerals have been used, where possible, to designate identical elements common to the figures. The figures are not to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further description.

[0014]

[0023] Embodiments of a method and apparatus for processing a substrate are provided herein. The apparatus generally comprises a modular, multi-chamber processing tool including one or more front-end equipment modules (EFEMs) for transferring substrates into and out of the multi-chamber processing tool. The multi-chamber processing tool is coupled to a plurality of automation modules, also referred to as atmospheric modular mainframes (AMMs), configured to perform one or more processing steps on the substrate. The one or more processing steps may be any suitable steps in manufacturing or packaging an integrated circuit. For example, the one or more processing steps may be configured to perform one or more of the following: a bonding process for adhering multiple chiplets onto a substrate, a plasma dicing or singulation process, a substrate cleaning process, a substrate plating or coating process, etc. Multiple AMMs generally can interact with the EFEM to deliver substrates to one or more process chambers associated with each of the AMMs.

[0015]

[0024] Each of the multiple AMMs includes a transfer robot, which allows the transfer robots to work in parallel to facilitate processing of multiple substrates simultaneously, advantageously increasing processing throughput. For example, in an exemplary process of bonding multiple chiplets onto a substrate, a multi-chamber processing tool advantageously allows multiple chiplets having different sizes to be bonded onto the substrate, and allows multiple chiplets to be bonded onto the substrate in multiple layers within the multi-chamber processing tool.

[0016]

[0025] FIG. 1 illustrates a schematic top view of a multi-chamber processing tool 100 for bonding chiplets to substrates in accordance with at least some embodiments of the present disclosure. The multi-chamber process tool 100 generally includes an equipment front-end module (EFEM) 102 and multiple AMMs 110 coupled in series with the EFEM 102. The multiple AMMs 110 are configured to shuttle one or more types of substrates 112 from the EFEM 102 through the multi-chamber processing tool 100 and perform one or more processing steps on the one or more types of substrates 112. Each of the multiple AMMs 110 generally includes a transfer chamber 116 and one or more process chambers 106 coupled to the transfer chamber 116 for performing one or more processing steps. The multiple AMMs 110 are advantageously coupled to each other via their respective transfer chambers 116 to provide modular scalability and customizability of the multi-chamber processing tool 100. As shown in FIG. 1, the multiple AMMs 110 includes three AMMs. In that case, a first AMM 110a is coupled to the EFEM 102, a second AMM 110b is coupled to the first AMM 110a, and a third AMM 110c is coupled to the second AMM 110b.

[0017]

[0026] The EFEM 102 includes a plurality of load ports 114 for receiving one or more types of substrates 112. In some embodiments, the one or more types of substrates 112 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 114 includes at least one of one or more first load ports 114 a for receiving a first type of substrate 112 a or one or more second load ports 114 b for receiving a second type of substrate 112 b. In some embodiments, the first type of substrate 112 a has a different size than the second type of substrate 112 b. In some embodiments, the second type of substrate 112 b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 112 b includes a plurality of chiplets arranged on a tape frame or carrier plate. In some embodiments, the second type of substrate 112 b may hold chiplets of various types and sizes. Thus, the one or more second load ports 114b may have different sizes or may have receiving surfaces configured to load second type substrates 112b having different sizes.

[0018]

[0027] In some embodiments, multiple load ports 114 are positioned along a common side of the EFEM 102. While Figure 1 shows a pair of first load ports 114a and a pair of second load ports 114b, the EFEM 102 may include other combinations of load ports, such as one first load port 114a and three second load ports 114b.

[0019]

[0028] In some embodiments, the EFEM 102 includes a scan station 108 having a substrate ID reader for scanning one or more types of substrates 112 for identifying information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 100 is configured to use any identification information from the scanned one or more types of substrates 112 to determine a process step based on the identification information, e.g., determining different process steps for the first type of substrates 112a and the second type of substrates 112b. In some embodiments, the scan station 108 may also be configured to rotate and move the first type of substrates 112a or the second type of substrates 112b to align them. In some embodiments, one or more of the multiple AMMs 110 include the scan station 108.

[0020]

[0029] An EFEM robot 104 is disposed within the EFEM 102 and configured to transfer a first type of substrate 112 a and a second type of substrate 112 b between a plurality of load ports 114 and the scan station 108. The EFEM robot 104 may include a substrate end effector for handling the first type of substrate 112 a and a second end effector for handling the second type of substrate 112 b. The EFEM robot 104 may rotate or may move linearly while rotating.

[0021]

[0030] FIG. 6 illustrates a second type substrate 112b according to at least some embodiments of the present disclosure. In some embodiments, the second type substrate 112b is a tape frame substrate, generally including a layer of support tape 602 surrounded by a tape frame 604. In use, a plurality of chiplets 606 may be attached to the support tape 602. The plurality of chiplets 606 is generally formed through a singulation process that dices a semiconductor wafer 610 into a plurality of chiplets 606, or dies. In some embodiments, the tape frame 604 is made of a metal, such as stainless steel. The tape frame 604 may have one or more notches 608 to facilitate alignment and handling. For a semiconductor wafer 610 having a diameter of 300 mm, the tape frame 604 may have a width of about 340 mm to about 420 mm and a length of about 340 mm to about 420 mm. The second type substrate 112b may alternatively be a carrier plate configured with a plurality of chiplets 606 coupled to the carrier plate.

[0022]

[0031] Referring back to FIG. 1 , one or more process chambers 106 may be sealably engaged with a transfer chamber 116. The transfer chamber 116 generally operates at atmospheric pressure but may be configured to operate at reduced pressure. For example, the transfer chamber 116 may be a non-reduced pressure chamber configured to operate at atmospheric pressure of about 700 Torr or greater. Furthermore, although the one or more process chambers 106 are generally depicted as being orthogonal to the transfer chamber 116, the one or more process chambers 106 may be disposed at an angle relative to the transfer chamber 116, or a combination of orthogonal and angled orientations. For example, the second AMM 110b depicts a pair of one or more process chambers 106 disposed at an angle relative to the transfer chamber 116.

[0023]

[0032] The transfer chamber 116 includes a buffer 120 configured to hold one or more first-type substrates 112a. In some embodiments, the buffer 120 is configured to hold one or more of the first-type substrates 112a and one or more second-type substrates 112b. The transfer chamber 116 includes a transfer robot 126 configured to transfer the first-type substrates 112a and the second-type substrates 112b between the buffer 120, one or more process chambers 106, and buffers located in adjacent AMMs of the plurality of AMMs 110. For example, the transfer robot 126 in the first AMM 110a is configured to transfer the first-type substrates 112a and the second-type substrates 112b between the buffer 120 in the first AMM 110a and the buffer 120 in the second AMM 110b. In some embodiments, the buffer 120 is located within the interior space of the transfer chamber 116, advantageously reducing the overall footprint of the tool. Additionally, the buffer 120 may be open to the interior space of the transfer chamber 116 for ease of access by the transfer robot 126. In some embodiments, the buffer 120 may also be configured to perform an irradiation process on the second type of substrates 112b.

[0024]

[0033] FIG. 7 shows an isometric view of a transfer chamber 116 of multiple AMMs 110, according to at least some embodiments of the present disclosure. The transfer chamber 116 is shown in simplified form to illustrate major components. The transfer chamber 116 generally includes a frame 710 covered with plates (top plate 712 shown in FIG. 7, side plates not shown) to close the transfer chamber 116. In some embodiments, the transfer chamber 116 has a width that is shorter than its length. The top plate 712 (or side plates) may include an access opening 716 that is selectively opened and closed to service the transfer chamber 116. The side plates include openings at the interface with at least one of one or more process chambers 106, the EFEM 102, or an adjacent transfer chamber. While FIG. 7 shows the transfer chamber 116 having a rectangular or box-like shape, the transfer chamber 116 may have any other suitable shape, such as a cylindrical or polygonal shape. One or more of the process chambers 106 may be orthogonally coupled to the transfer chamber 116 or may be coupled at an angle to the transfer chamber 116 .

[0025]

[0034] The transfer chamber 116 may have one or more environmental controls. For example, an opening in the transfer chamber 116 (e.g., access opening 716) may include a filter to filter airflow entering the transfer chamber 116. Other environmental controls may include one or more of humidity control, static control, temperature control, or pressure control.

[0026]

[0035] The transfer robot 126 is generally housed within a frame 710. The transfer robot 126 is configured to rotate or move linearly while rotating within the transfer chamber 116. In some embodiments, the transfer robot 126 moves linearly via rails on the floor of the transfer chamber 116 or via wheels underneath the transfer robot 126. The transfer robot 126 includes a telescoping arm 720 having one or more end effectors 730 that can extend into one or more process chambers 106 and into adjacent AMMs. In some embodiments, the one or more end effectors 730 include a substrate end effector for handling a first type of substrate 112a and a second end effector for handling a second type of substrate 112b. In some embodiments, in a transfer chamber 116 having a length of about 2.0 to about 2.5 meters, the telescoping arm 720 can have a stroke length of up to about 1.0 meter. In some embodiments, the EFEM robot 104 is the same type and configuration as the transfer robot 126 to increase commonality of parts.

[0027]

[0036] The buffer 120 is housed within the frame 710, for example, within the interior space of the frame 710. In some embodiments, the buffer 120 is configured to rotate to align the first type of substrates 112a and the second type of substrates 112b in a desired manner. In some embodiments, the buffer is configured to hold one or more types of substrates 112 in a vertical stack, advantageously reducing the footprint of the transfer chamber 116. For example, in some embodiments, the buffer 120 includes multiple shelves 722 for storing or holding one or more first type substrates 112a and one or more second type substrates 112b. In some embodiments, the multiple shelves 722 are arranged in a vertically spaced configuration. In some embodiments, the buffer 120 includes six shelves. In some embodiments, the multiple shelves include two shelves for receiving the second type of substrates 112b.

[0028]

[0037] Referring back to FIG. 1 , the one or more process chambers 106 include atmospheric chambers configured to operate under atmospheric pressure and reduced-pressure chambers configured to operate under reduced pressure. Examples of atmospheric-pressure chambers may generally include wet-cleaning chambers, radiation chambers, heating chambers, metrology chambers, bonding chambers, etc. Examples of reduced-pressure chambers may include plasma chambers. Atmospheric-pressure chambers of the types described above may also be configured to operate under reduced pressure, if desired. The one or more process chambers 106 may be any process chamber or module required to perform a bonding process, a dicing process, a cleaning process, a plating process, etc.

[0029]

[0038] In some embodiments, the one or more process chambers 106 of each of the plurality of AMMs 110 includes at least one of a wet clean chamber 122, a plasma chamber 130, a degassing chamber 132, an irradiance chamber 134, or a bonder chamber 140. The multi-chamber processing tool 100 thereby includes at least one wet clean chamber 122, at least one plasma chamber 130, at least one degassing chamber 132, at least one irradiance chamber 134, and at least one bonder chamber 140.

[0030]

[0039] The wet cleaning chambers 122 are configured to perform a wet cleaning process via a fluid, such as water, to clean one or more types of substrates 112. The wet cleaning chambers 122 may include a first wet cleaning chamber 122a for cleaning a first type of substrate 112a or a second wet cleaning chamber 122b for cleaning a second type of substrate 112b.

[0031]

[0040] The degassing chamber 132 is configured to perform a degassing process, for example via a high temperature baking process, to remove moisture from the substrates 112. In some embodiments, the degassing chamber 132 includes a first degassing chamber 132a for the first type of substrate 112a and a second degassing chamber 132b for the second type of substrate 112b.

[0032]

[0041] The plasma chamber 130 may be configured to perform an etching process to remove undesired materials (e.g., organic materials or oxides) from the first type substrate 112a or the second type substrate 112b. In some embodiments, the plasma chamber 130 includes a first plasma chamber 130a for the first type substrate 112a and a second plasma chamber 130b for the second type substrate 112b. The plasma chamber 130 may also be configured to perform an etching process to dice the substrate 112 into chiplets. In some embodiments, the plasma chamber 130 may be configured to perform a deposition process (e.g., a physical vapor deposition process, a chemical vapor deposition process, etc.) to coat the first type substrate 112a or the second type substrate 112b with a desired layer of material.

[0033]

[0042] The radiation chamber 134 is configured to perform a radiation process on the second type substrate 112b to reduce adhesion between the plurality of chiplets 606 and the support tape 602. For example, the radiation chamber 134 may be an ultraviolet radiation chamber configured to direct ultraviolet radiation at the support tape 602 or a heating chamber configured to heat the support tape 602. Reducing the adhesion between the plurality of chiplets 606 and the support tape 602 facilitates peeling of the plurality of chiplets 606 from the second type substrate 112b. In some embodiments, the radiation chamber 134 is configured to hold and process the plurality of second type substrates 112b.

[0034]

[0043] The bonder chamber 140 is configured to transfer and bond at least a portion of the plurality of chiplets 606 to one of the first type substrates 112a. The bonder chamber 140 generally includes a first support 142 for supporting one of the first type substrates 112a and a second support 144 for supporting one of the second type substrates 112b.

[0035]

[0044] In some embodiments, the one or more process chambers 106 of the first AMM 110a include at least one of a plasma chamber 130 or a degassing chamber 132, and include a wet cleaning chamber 122. In one illustrative example of FIG. 1 , the first AMM 110a includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the AMM 110a. In some embodiments, the first AMM 110a includes a first wet cleaning chamber 122a and a second wet cleaning chamber 122b on a second side opposite the first side of the first AMM 110a. In some embodiments, the second AMM includes an irradiance chamber 134 and at least one of a plasma chamber 130 or a degassing chamber 132.

[0036]

[0045] In some embodiments, the last AMM of the plurality of AMMs 110, e.g., the third AMM 110c in FIG. 1, includes one or more bonder chambers 140 (two are shown in FIG. 1). In some embodiments, a first of the two bonder chambers is configured to remove and bond chiplets having a first size, and a second of the two bonder chambers is configured to remove and bond chiplets having a second size. In some embodiments, any of the plurality of AMMs 110 includes a metrology chamber 118 configured to perform measurements on one or more types of substrates 112. In FIG. 1, the metrology chamber 118 is shown as part of the second AMM 110b coupled to the transfer chamber 116 of the second AMM 110b. However, the metrology chamber 118 may be coupled to or within any of the transfer chambers 116.

[0037]

[0046] A controller 180 controls the operation of any of the multi-chamber processing tools described herein, including the multi-chamber processing tool 100. The controller 180 may use direct control of the multi-chamber processing system 100 or, alternatively, may control by controlling a computer (or controller) associated with the multi-chamber processing tool 100. In operation, the controller 180 enables data collection and feedback from the multi-chamber processing tool 100 to optimize performance of the multi-chamber processing tool 100. The controller 180 generally includes a central processing unit (CPU) 182, memory 184, and support circuits 186. The CPU 182 may be any form of general-purpose computer processor that may be used in an industrial setting. The support circuits 186 are conventionally coupled to the CPU 182 and may include cache, clock circuits, input / output subsystems, power supplies, etc. Software routines, such as the methods described below, may be stored in the memory 184 and, when executed by the CPU 182, may transform the CPU 182 into a special-purpose computer (the controller 180). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 100 .

[0038]

[0047] Memory 184 may take the form of a computer-readable storage medium containing instructions that, when executed by CPU 182, facilitate operation of semiconductor processes and equipment. The instructions in memory 184 may take the form of a program product, such as a program, that implements the methods of the present principles. The program code may conform to any one of several different programming languages. In one embodiment, the present disclosure may be implemented as a program product stored on a computer-readable storage medium for use with a computer system. The program(s) in the program product define the functions of several aspects (including the methods described herein). Exemplary computer-readable storage media include, but are not limited to, non-writable storage media on which information is permanently stored (e.g., a read-only memory device in a computer, such as a CD-ROM disk readable by a CD-ROM drive, flash memory, a ROM chip, or any type of solid-state nonvolatile semiconductor memory), and writable storage media on which changeable information is stored (e.g., a floppy disk in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such computer-readable storage media, when carrying computer-readable instructions that direct the functions of the methods described herein, become aspects of the present principles.

[0039]

[0048] 2 shows a schematic top view of a multi-chamber processing tool 200 for bonding chiplets to substrates in accordance with at least some embodiments of the present disclosure. The multi-chamber processing tool 200 is similar to the multi-chamber processing tool 100, but differs in the configuration of one or more process chambers 106. The multi-chamber processing tool 200 includes three AMMs. In some embodiments, the first AMM 110a includes a first degassing chamber 132a configured to degas a first type of substrate 112a and a second degassing chamber 132b configured to degas a second type of substrate 112b on a first side of the first AMM 110a, as well as two second wet cleaning chambers 122b on a second side opposite the first side of the first AMM 110a. In some embodiments, the second side of the first AMM 110a may alternatively include two first wet cleaning chambers 122a, or one first wet cleaning chamber 122a and one second wet cleaning chamber 122b.

[0040]

[0049] In some embodiments, the second AMM 110b includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the second AMM 110b. In some embodiments, a second side of the second AMM 110b opposite the first side includes two first wet cleaning chambers 122a. In some embodiments, the second side of the second AMM 110b includes the first wet cleaning chamber 122a and a radiation chamber 134. In some embodiments, the one or more process chambers 106 of the last AMM (e.g., the third AMM 110c of FIG. 2) include two bonder chambers 140 and a radiation chamber 134. In some embodiments, the radiation chamber 134 is disposed along the width of the transfer chamber 116. By locating the radiation chamber 134 within the third AMM 110 c , the multi-chamber processing tool 200 advantageously includes two additional wet clean chambers 122 compared to the multi-chamber processing tool 100 .

[0041]

[0050] 3 shows a schematic top view of a multi-chamber processing tool 300 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. Multi-chamber processing tool 300 is similar to multi-chamber processing tool 200, except that multi-chamber processing tool 300 includes a fourth AMM 110d and a fifth AMM 110e. In some embodiments, the plurality of AMMs 110 includes one or more AMMs having one or more bonder chambers 140 disposed between the first AMM 110a and the last AMM (e.g., the fifth AMM 110e of FIG. 3).

[0042]

[0051] In some embodiments, the multi-chamber processing tool 300 includes six bonder chambers 140, which are configured to process chiplets of the same type and size or chiplets of different types and sizes. In some embodiments, the fifth AMM 110e includes a radiant chamber 134. The modular configuration of the multi-chamber processing tool 300 advantageously facilitates simultaneous bonding of additional substrates and additional types and sizes of chiplets compared to the multi-chamber processing tool 200 of FIG. 2 .

[0043]

[0052] 4 shows a schematic top view of a multi-chamber processing tool 400 for bonding chiplets to a substrate arranged in a T-shaped configuration, according to at least some embodiments of the present disclosure. The T-shaped configuration of multi-chamber processing tool 400 advantageously reduces the length of the tool compared to a rectilinear layout like multi-chamber processing tool 300, while having the same or a similar number of process chambers as multi-chamber processing tool 300.

[0044]

[0053] 4, the plurality of AMMs 110 includes a junction module 410 coupled to the AMMs on three sides of the junction module 410. In some embodiments, the plurality of AMMs 110 includes a first AMM 110a coupled to the EFEM 102 and a second AMM 110b coupled to the first AMM 110a at one end and to the junction module 410 at the opposite end. In some embodiments, a third AMM 110c and a fourth AMM 110d are coupled to the junction module 410 on either side of the junction module 410. In some embodiments, a fifth AMM 110e is coupled to the fourth AMM 110d at the end opposite the junction module 410. In some embodiments, the transfer robot 126 in the bonding module 410 is configured to transfer one or more types of substrates 112 between the buffer 120 in the bonding module 410 and the buffers in the third AMM 110c and the fourth AMM 110d. In some embodiments, the bonding module 410 includes a radiation chamber 134 on an opposite side of the bonding module 410 from the second AMM 110b.

[0045]

[0054] FIG. 5 depicts a schematic top view of a multi-chamber processing tool 500 for bonding chiplets to a substrate, arranged in a U-shaped configuration, in accordance with at least some embodiments of the present disclosure. The multi-chamber processing tool 500 includes a plurality of AMMs 110 arranged in a U-shaped configuration. As shown in FIG. 5, a first set of three AMMs 110a-110c are arranged linearly, a second set of three AMMs 110d-110f extend perpendicularly to the first set, and a third AMM 110g-110i extend perpendicularly to the second set and parallel to the first set. The U-shaped configuration of the multi-chamber processing tool 500 advantageously reduces the length of the tool compared to a linear configuration, such as the multi-chamber processing tool 300 of FIG. 3.

[0046]

[0055] In some embodiments, the second EFEM 502 is coupled to the last AMM in the plurality of AMMs 110. For example, in FIG. 5 , the last AMM, i.e., the ninth AMM 110i, is coupled to the second EFEM 502. In some embodiments, the second EFEM 502 includes one or more load ports 514 and an EFEM robot 104. In some embodiments, the one or more load ports 514 include one or more first load ports 514a for receiving the first type substrates 112a and one or more second load ports 514b for receiving the second type substrates 112b having multiple tiplets. In some embodiments, the one or more load ports 514 include four second load ports 514b and no first load ports 514a. The addition of the second EFEM 502 advantageously adds additional load ports and additional scan stations 108 to the tool, increasing processing throughput. The addition of the second EFEM 502 also advantageously allows one or more types of substrates 112 to enter the multi-chamber processing tool 500 from one end and exit the other end without having to return to the other end, reducing handling and increasing processing throughput. Reducing handling of one or more types of substrates 112 may advantageously reduce particle generation and contamination within the multi-chamber processing tool 500. In some embodiments, the EFEM 102 and the second EFEM 502 each have two or more load ports. In some embodiments, the EFEM 102 and the second EFEM 502 together include two or more first load ports 114 a and four or more second load ports 116 b. In some embodiments, the EFEM 102 and the second EFEM 502 together include two first load ports 114 a and six second load ports 116 b. The second EFEM 502 may be added to any of the multi-chamber processing tools described herein.

[0047]

[0056] In some embodiments, one of the AMMs 110 in the plurality of AMMs 110 in a U-shaped configuration may include two buffers 120. While FIG. 5 depicts the sixth AMM 110f having two buffers 120, any of the second set of three AMMs 110d-110f may include two buffers 120. In some embodiments, the third AMM 110c and the seventh AMM 110g may include a radiation chamber 134. The configuration of the one or more process chambers 106 associated with the plurality of AMMs 110 in any of FIGS. 1-5 is exemplary, and the one or more process chambers 106 may be rearranged in any suitable manner for a desired application in any of the multi-chamber processing tools 100, 200, 300, 400, 500, 900, and 1000.

[0048]

[0057] 8 shows a flowchart of a method 800 for bonding chiplets to a substrate according to at least some embodiments of the present disclosure. At 802, the method 800 includes loading a substrate (e.g., a first type substrate 112a) onto a load port (e.g., substrate load port 114a) of an equipment front end module (EFEM) (e.g., equipment front end module 102) of a multi-chamber processing tool (e.g., multi-chamber processing tool 100, 200, 300, 400, 500, 900, 1000) having multiple AMMs (e.g., multiple AMMs 110).

[0049]

[0058] At 804, method 800 includes using an EFEM robot (e.g., EFEM robot 104) to transfer a first type of substrate to a first buffer (e.g., buffer 120) located within a first AMM (e.g., first AMM 110a) coupled to the EFEM. In some embodiments, the EFEM robot transfers the first type of substrate to a scan station (e.g., scan station 108) within the EFEM prior to transfer to the first buffer, records identification information, and determines a process step based on the identification information. For example, the identification information may include information about how many different types of chiplets are attached to the first type of substrate, how many layers of chiplets are attached to the first type of substrate, and so on. The identification information may indicate at least one of the desired placement of the chiplets when bonded to the first type of substrate or when bonded to the first type of substrate. The identification information may also indicate which pre-bonding processes (e.g., wet cleaning, plasma etching, degassing, UV process, etc.) are required and the process parameters (e.g., duration, power, temperature, etc.). The identification information may be read via a substrate ID reader, such as an OCR reader or a barcode reader.

[0050]

[0059] At 806, the method 800 includes sequentially transferring the first type of substrates from the first buffer via respective transfer robots (e.g., transfer robot 126) in each of the plurality of AMMs to a first wet cleaning chamber (e.g., first wet cleaning chamber 122a) to perform a cleaning process, to a first degassing chamber (e.g., first degassing chamber 132a) to perform a degassing process to dry the first type of substrates, to a first plasma chamber (e.g., first plasma chamber 130a) to perform a plasma etching process to remove undesired materials from the first type of substrates, and to a bonder chamber (e.g., bonder chamber 140).

[0051]

[0060] At 808, the method 800 includes using an EFEM robot to transfer a second type substrate (e.g., second type substrate 112b) having a plurality of chiplets from a second load port (e.g., one or more second load ports 114b) to a first buffer. In some embodiments, the EFEM robot is used to transfer the second type substrate to a scanning station within the EFEM prior to transfer to the first buffer, record identification information, and determine a process step based on the identification information. The identification information may be read via an OCR reader or a barcode reader.

[0052]

[0061] At 810, method 800 includes sequentially transferring the second type substrate from the first buffer via a respective transfer robot in each of the plurality of AMMs to a second wet cleaning chamber (e.g., second wet cleaning chamber 122b) to perform a cleaning process, to a second degassing chamber (e.g., second degassing chamber 132b) to perform a degassing process to dry the second type substrate, to a second plasma chamber (e.g., second plasma chamber 130b) to perform a plasma etching process to remove undesired material from the second type substrate, to a radiation chamber (e.g., radiation chamber 134) to perform a radiation process to weaken adhesive bonds between the chiplet and the second type substrate, and to a bonder chamber. In some embodiments, the radiation process is a UV radiation process. In some embodiments, the radiation process is a heating process.

[0053]

[0062] At 812, method 800 includes transferring at least some of the plurality of chiplets from a second type of substrate to a first type of substrate in the bonder chamber. At 814, method 800 includes bonding at least some of the plurality of chiplets to the first type of substrate in the bonder chamber via a suitable bonding method. In some embodiments, after at least some of the plurality of chiplets are bonded to the first type of substrate in the bonder chamber, the first type of substrate is transferred to a second bonder chamber. In some embodiments, a second one of the second type of substrates is transferred to the second bonder chamber. In some embodiments, the second one of the second type of substrates includes a plurality of second chiplets having a different size than the plurality of chiplets. In some embodiments, at least some of the plurality of second chiplets are transferred onto and bonded to the first type of substrate in the second bonder chamber. At 816, the method 800 includes loading the first type substrate having the plurality of chiplets attached thereto from the last AMM onto a load port of a second EFEM (e.g., a second EFEM) of the multi-chamber processing tool.

[0054]

[0063] In some embodiments, the first type of substrate may be transferred to a third bonder chamber to bond the plurality of chiplets and a third plurality of chiplets having a different size than the second plurality of chiplets to the first type of substrate. Thus, a multi-chamber processing tool may be configured to accommodate the N bonder chambers necessary to bond N different types or sizes of chiplets onto a given substrate. For example, the multi-chamber processing tool 400 of FIG. 4 includes six bonder chambers for receiving six different types or sizes of chiplets. Once bonding is complete, the first type of substrate is shuttled back to the first load port via the buffer and the transfer robot of the multi-chamber processing tool. Once bonding is complete, the second type of substrate may remain in the multi-chamber processing tool for subsequent processing of the subsequent first type of substrate, or alternatively, may be shuttled back to the second load port via the buffer and the transfer robot.

[0055]

[0064] In some embodiments, a plurality of chiplets are arranged along a first layer of chiplets on a first type of substrate. In some embodiments, the first type of substrate having the first layer of chiplets is transferred to a first plasma chamber of a multi-chamber processing tool to perform an auxiliary plasma etching process to remove undesired material. In some embodiments, the first type of substrate is then transferred to a bonding chamber or a second bonding chamber. In the bonding chamber or the second bonding chamber, a plurality of chiplets from a second type of substrate or a plurality of second chiplets from one of the second type of substrates is transferred onto the first layer along with the second layer of chiplets. The second layer of chiplets may include chiplets of the same type and size as the first layer of chiplets. Alternatively, the second layer of chiplets may include at least one of chiplets of a different type or size from the first layer of chiplets.

[0056]

[0065] In some embodiments, a first type of substrate and a second type of substrate are processed simultaneously in a multi-chamber processing tool. In some embodiments, a plurality of first type of substrates and a plurality of second type of substrates are processed simultaneously in a multi-chamber processing tool to advantageously increase processing throughput. The multi-chamber processing tool may include a second EFEM (e.g., second EFEM 502) or a third EFEM to provide additional load ports and scan stations to advantageously increase processing capacity. For example, at least one of a first one of the first type of substrates or a first one of the second type of substrates may undergo a wet cleaning process, while a second one of the first type of substrates is undergoing a degassing process and a third one of the first type of substrates and a second one of the second type of substrates is undergoing a bonding process. In another example, a first one of the first type of substrates and a second one of the first type of substrates may undergo a wet cleaning process. Meanwhile, a third one of the first type substrates is undergoing a degassing process, and a fourth one of the first type substrates and a fifth one of the first type substrates are undergoing a bonding process with a first one of the second type substrates and a second one of the second type substrates, respectively. These are non-limiting examples of how a plurality of first type substrates and second type substrates may be processed in a multi-chamber processing tool.

[0057]

[0066] In some embodiments, a multi-chamber processing tool may be configured to perform a plasma dicing or singulation process using a plasma chamber of the multi-chamber processing tool prior to bonding the chiplets to the first type of substrate. In some embodiments, a multi-chamber processing tool may be configured to perform an additional cleaning or substrate plating process before or after bonding the chiplets to the first type of substrate. Multiple AMMs generally interact with the EFEM to deliver substrates to one or more process chambers associated with each of the AMMs. Thus, a desired throughput of processed substrates can be tailored using an appropriate number of AMMs and associated process chambers.

[0058]

[0067] FIG. 9 depicts a schematic top view of a multi-chamber processing tool for bonding chiplets to substrates, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 900 is similar to the multi-chamber processing tool 200. However, the multi-chamber processing tool 900 includes a fourth AMM 110d and a second EFEM 502 coupled to the fourth AMM 110d on an opposite side from the EFEM 102. In some embodiments, the radiation chamber 134 is coupled to the fourth AMM 110d, and the second EFEM 502 is coupled to the radiation chamber 134. Such an arrangement advantageously allows the first type substrate 112a and the second type substrate 112b to enter the multi-chamber processing tool 900 from the EFEM 102 and exit the second EFEM 502, improving throughput. The second EFEM 502 may be incorporated into any of the tools disclosed herein.

[0059]

[0068] In some embodiments, one or more of the transfer chambers 116 may include a pre-aligner 910 configured to rotate and align the first type substrate 112 a or the second type substrate 112 b to a desired orientation. The pre-aligner 910 may be separate from the buffer 120. In some embodiments, the transfer chamber 116 associated with the AMMs 110 having the bonder chamber 140 may include the pre-aligner 910. In some embodiments, the radiation chamber 134 may be configured to rotate one or more types of substrates 112 disposed therein.

[0060]

[0069] FIG. 10 shows a schematic top view of a multi-chamber processing tool 1000 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 1000 is similar to the multi-chamber processing tool 900. However, the multi-chamber processing tool 1000 includes multiple EFEMs 102. In some embodiments, any of the multi-chamber processing tools disclosed herein may include multiple EFEMs 102 at one end of the tool and a second EFEM at the other end of the tool, as shown, for example, in FIG. 10 . Multiple EFEMs 102 advantageously allow for increased capacity of one or more load ports, thus improving throughput. Multiple EFEMs 102 advantageously provide additional load ports to facilitate additional die types. For example, one EFEM 102 may include two load ports for a first type of substrate 112a and two load ports for a second type of substrate 112b, while another one of the EFEMs 102 may include four load ports for the second type of substrate 112b, which may include different die types and sizes.

[0061]

[0070] In some embodiments, a transfer chamber 116 may be disposed between each of the EFEMs 102 and the first AMM 110a. In some embodiments, the transfer chamber 116 may include one or more shelves 1010 configured to hold and rotate one or more types of substrates 112. In some embodiments, the transfer chamber may include one or more of the one or more shelves 1010 on either side of a transfer robot 126 disposed within the transfer chamber 116. The transfer robot 126 may be configured to transfer the substrates 112 from the one or more shelves 1010 to the first AMM 110a.

[0062]

[0071] While the forgoing is directed to several embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A multi-chamber processing tool for processing a substrate, comprising: a front-end equipment module (EFEM) having one or more load ports for receiving one or more types of substrates; and a plurality of automation modules coupled to each other and having a first automation module coupled to the EFEM; each of the plurality of automation modules includes a transfer chamber and one or more process chambers coupled to the transfer chamber, the transfer chamber including a buffer configured to hold a plurality of the one or more types of substrates, the transfer chamber including a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and a buffer located in an adjacent automation module of the plurality of automation modules; the one or more load ports include one or more first load ports configured to receive a first type of substrate and one or more second load ports configured to receive a second type of substrate having a plurality of chiplets; The one or more process chambers of each of the plurality of automated modules include at least one of a wet cleaning chamber, a plasma chamber, a degassing chamber for performing a degassing process to dry the substrate, or a bonder chamber, whereby the multi-chamber processing tool includes at least one wet cleaning chamber, at least one plasma chamber, at least one degassing chamber, and at least one bonder chamber.

2. A multi-chamber processing tool as described in claim 1, wherein the one or more process chambers of each of the plurality of automated modules include a radiation chamber.

3. 10. The multi-chamber processing tool of claim 1, wherein the one or more process chambers of a first automated module include at least one of a plasma chamber or a degassing chamber and include a wet clean chamber, and a last automated module of the plurality of automated modules includes one or more bonder chambers configured to detach the plurality of chiplets from the second type substrate and bond the plurality of chiplets onto the first type substrate.

4. 10. The multi-chamber processing tool of claim 1, wherein the at least one wet clean chamber comprises a first wet clean chamber for cleaning the first type of substrates and a second wet clean chamber for cleaning the second type of substrates, the at least one plasma chamber comprises a first plasma chamber for processing the first type of substrates and a second plasma chamber for processing the second type of substrates, and the at least one degassing chamber comprises a first degassing chamber for processing the first type of substrates and a second degassing chamber for processing the second type of substrates.

5. the transfer chamber is a non-vacuum chamber; or the EFEM includes a scan station having a substrate ID reader; 10. The multi-chamber processing tool of claim 1, wherein at least one of:

6. 10. The multi-chamber processing tool of claim 1, wherein the plurality of automated modules includes one or more automated modules having one or more bonder chambers disposed between the first automated module and a last automated module.

7. 7. The multi-chamber processing tool of claim 1, wherein the plurality of automation modules include a first automation module coupled to the EFEM, a second automation module coupled to the first automation module at one end and to a bonding module at an opposite end, a third automation module and a fourth automation module coupled to the bonding module on either side of the bonding module, and a fifth automation module coupled to the fourth automation module at an opposite end from the bonding module, the bonding modules including a buffer and a transfer robot.

8. 7. The multi-chamber processing tool of claim 1, further comprising a second EFEM coupled to a last automation module of the plurality of automation modules, the plurality of automation modules being arranged in a linear configuration.

9. 7. The multi-chamber processing tool of claim 1, further comprising a second EFEM coupled to a last automation module of the plurality of automation modules, the second EFEM including a plurality of load ports and an EFEM robot, the plurality of automation modules being arranged in a U-shaped configuration.

10. the one or more load ports include one or more first load ports configured to receive a first type of substrate and one or more second load ports configured to receive a second type of substrate having a plurality of tiplets, and the EFEM includes an EFEM robot configured to transfer the first type of substrate and the second type of substrate; 10. The multi-chamber processing tool of claim 1, wherein the one or more process chambers of a first automated module of the plurality of automated modules include at least one of a plasma chamber or a degassing chamber and a wet clean chamber; a second automated module of the plurality of automated modules coupled to the first automated module includes at least one of a plasma chamber or a degassing chamber; and a third automated module of the plurality of automated modules coupled to the second automated module includes one or more bonder chambers configured to detach the plurality of chiplets from the second type of substrate and bond the plurality of chiplets onto the first type of substrate.

11. 11. The multi-chamber processing tool of claim 10, wherein the third automated module includes two bonder chambers, a first of the two bonder chambers configured to remove and bond chiplets having a first size, and a second of the two bonder chambers configured to remove and bond chiplets having a second size.

12. the buffer is configured to rotate to align the second type of substrate; or the transfer robot is configured for rotational and linear movement within the transfer chamber.

12. The multi-chamber processing tool of claim 10, wherein at least one of:

13. 12. The multi-chamber processing tool of claim 10 or 11, wherein the EFEM robot and the transfer robot include a first end effector for handling the first type of substrate and a second end effector for handling the second type of substrate.

14. 12. The multi-chamber processing tool of claim 10 or 11, further comprising a second EFEM coupled to a last automation module of the plurality of automation modules.

15. 1. A method for bonding a plurality of chiplets onto a substrate, comprising: loading a first type of substrate onto a first load port of a front end equipment module (EFEM) of a multi-chamber processing tool having a plurality of automated modules; using an EFEM robot to transfer the first type of substrate to a first buffer located in a first automation module coupled to the EFEM; Sequentially transferring the first type of substrate from the first buffer to a first wet cleaning chamber to perform a cleaning process, then to a first degassing chamber to perform a degassing process to dry the first type of substrate, then to a first plasma chamber to perform a plasma etching process to remove undesired materials from the first type of substrate, and finally to a bonder chamber; using the EFEM robot to transfer a second type of substrate having a plurality of chiplets to the first buffer; sequentially transferring the second type substrate from the first buffer to a second wet cleaning chamber to perform a cleaning process, then to a second degassing chamber to perform a degassing process to dry the second type substrate, then to a second plasma chamber to perform a plasma etching process to remove undesired materials from the second type substrate, then to a radiation chamber to perform a radiation process to weaken the bond between the plurality of chiplets and the second type substrate, and finally to a bonder chamber; transferring at least some of the plurality of chiplets from the second type substrate to the first type substrate in the bonder chamber; and bonding the at least some of the plurality of chiplets to the first type substrate in the bonder chamber.

16. 16. The method of claim 15, further comprising using the EFEM robot to transfer the first type substrate and the second type substrate to a scan station within the EFEM prior to transfer to the first buffer, recording identification information, and determining a process step based on the identification information.

17. The method of claim 15 , wherein the first type of substrate and the second type of substrate are processed simultaneously.

18. 16. The method of claim 15, wherein a plurality of substrates of a first type and a plurality of substrates of a second type are processed simultaneously in the multi-chamber processing tool.

19. transferring the first type substrate to a second bonder chamber; transferring a second substrate of the second type of substrates to the second bonder chamber, the second substrate of the second type of substrates including a second plurality of chiplets having a different size than the plurality of chiplets; and 19. The method of claim 15, further comprising transferring at least some of the second plurality of chiplets onto the first type substrate.

20. The plurality of chiplets are arranged along a first layer of chiplets on the first type substrate, and the method includes: transferring the first type substrate having the first layer of the chiplets to the first plasma chamber to perform an auxiliary plasma etching process to remove undesired material; transferring the first type substrate to the bonder chamber or a second bonder chamber; and 19. The method of claim 15, further comprising transferring the plurality of chiplets from the second type of substrate or a second plurality of chiplets from a second one of the second type of substrates onto the first layer of chiplets in the bonder chamber or the second bonder chamber.

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