Semiconductor Devices

The semiconductor device enhances heat dissipation in the central region of GaN HEMT devices by lengthening central sources and optimizing through-hole configurations, ensuring efficient heat dissipation and radio frequency performance.

JP7725733B2Active Publication Date: 2025-08-19DYNAX SEMICON
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Patent Information

Application Number
JP2024530053
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2021-12-31
Filing Date
2022-12-21
Publication Date
2025-08-19
Estimated Expiration
2042-12-21

AI Technical Summary

Technical Problem

Gallium nitride-based high electron mobility transistor (GaN HEMT) devices generate excessive heat in the central region, leading to early device burnout due to inefficient heat dissipation, which affects radio frequency characteristics when attempting to increase the heat dissipation area.

Method used

A semiconductor device design with an active region and passive region, featuring longer central sources and adjusted through-hole configurations to enhance heat dissipation while maintaining radio frequency performance by symmetrical current flow paths.

Benefits of technology

Improves heat dissipation in the central region, maintains radio frequency characteristics, and ensures symmetric current flow paths, preventing device burnout and preserving performance.

✦ Generated by Eureka AI based on patent content.

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Abstract

An embodiment of the present invention discloses a semiconductor device. The semiconductor device includes a plurality of sources, a plurality of gates, and a plurality of drains located in an active region. In the active region, the sources, gates, and drains are alternately arranged along a first direction. In the first direction, two sources are included that are closest to the ends of the arrangement. Any of the gates is located between one source and one drain. The length in the first direction of at least the source located in the center is longer than the length in the first direction of the sources located at both ends. The semiconductor device further includes multiple rows of through holes penetrating the substrate and the multi-layer semiconductor layer. The multiple rows of through holes are arranged along the first direction. The orthogonal projection of the sources onto the substrate overlaps with the orthogonal projection of the through holes onto the substrate. In the first direction, the number of rows of through holes installed corresponding to at least the source located in the center is twice the number of rows of through holes installed corresponding to the sources located at both ends. According to the technical solution of the embodiment of the present invention, the heat dissipation ability of the central region of the semiconductor device can be improved and the radio frequency characteristics of the semiconductor device can be ensured.
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Citation Information

Patent Citations

  • Semiconductor device

    JP1994310545A

  • Semiconductor device

    JP2004039657A

  • Semiconductor device with varying electrode width to allow non-uniform gate pitch and method of manufacturing same

    JP2008544548A

  • Semiconductor device and its manufacturing method

    JP2020521329A

  • Semiconductor device and method for manufacturing a semiconductor device

    JP2020535627A