Magnetic Housing System

Abstract

To provide magnetic and electromagnetic systems and a method for controlling a density profile of plasma generated in a process volume of a PECVD chamber to affect a deposition profile of a film.SOLUTION: In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of a magnetic housing system. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between respective retaining brackets. The plurality of retaining brackets have a plurality of magnets removably disposed therein. The plurality of magnets are configured to travel in a circular path when the rotational magnetic housing is rotated around a round central opening.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] FIELD OF THE DISCLOSURE

[0001] Embodiments of the present disclosure generally relate to a magnetic housing system for controlling the properties of a generated plasma, and a plasma-enhanced deposition system having the same. [Background technology]

[0002] Plasma-enhanced chemical vapor deposition (PECVD) is generally used to deposit films on substrates, such as semiconductor wafers. Plasma etching is generally used to etch films disposed on substrates. PECVD and plasma etching are achieved by introducing one or more gases into a process volume of a processing chamber containing a substrate. The one or more gases mix in a diffuser located near the top of the chamber and are injected into the process volume through multiple holes or nozzles in the diffuser. During PECVD and plasma etching, the one or more gas mixtures in the process volume are energized (e.g., excited) to generate a plasma by applying radio frequency (RF) energy to the chamber from one or more RF sources coupled to the chamber. An electric field is generated in the process volume such that atoms of the one or more gas mixtures present in the process volume are ionized and release electrons. In PECVD, the ionized atoms are accelerated toward the substrate support to facilitate the deposition of a film on the substrate. In plasma etching, ionized atoms accelerated to the substrate support facilitate etching of a film disposed on the substrate.

[0003]

[0003] The plasma generated within the processing space has characteristics such as a density profile. A non-uniform density profile can cause non-uniform deposition or etching of a film on a substrate. In particular, the density profile of the plasma affects the deposition thickness or etching profile of a film across the surface of the substrate. Therefore, what is needed in the art is a system and method for controlling the characteristics of the plasma generated within the processing space of a PECVD chamber. Summary of the Invention

[0004] In one embodiment, a system is provided. The system includes a rotatable magnetic housing having an upper plate, an outer wall, an inner wall defining a circular central opening, and a lower plate. A plurality of retaining brackets are disposed within the rotatable magnetic housing. Each retaining bracket of the plurality of retaining brackets is disposed within the rotatable magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets have a plurality of magnets removably disposed therein. Each magnet of the plurality of magnets is held by a respective retaining bracket with a pitch p between each magnet of the plurality of magnets, and the plurality of magnets are configured to travel a circular path when the rotatable magnetic housing rotates about the circular central opening.

[0005] In another embodiment, a chamber is provided. The chamber includes a chamber body, a chamber lid having a gas distribution assembly, a substrate support disposed opposite the gas distribution assembly to define a processing space, the processing space having a central axis, a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support, and a rotatable magnetic housing system having a rotatable magnetic housing coupled to the chamber. The rotatable magnetic housing has an upper plate, an outer wall, an inner wall defining a circular central opening, and a lower plate. A plurality of retaining brackets are disposed within the rotatable magnetic housing, each retaining bracket of the plurality of retaining brackets being disposed within the rotatable magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets have a plurality of magnets removably disposed therein. Each magnet of the plurality of magnets is held by a respective retaining bracket with a pitch p between each magnet of the plurality of magnets, and the plurality of magnets are configured to travel a circular path when the rotatable magnetic housing rotates.

[0006] In yet another embodiment, a chamber is provided, the chamber including a chamber body, a chamber lid having a gas distribution assembly, and a substrate support disposed opposite the gas distribution assembly to define a processing space, the processing space having a central axis; The apparatus includes a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support, and an electromagnet magnetic housing system. The electromagnet magnetic housing system includes an electromagnet housing coupled to the chamber. The electromagnet housing has an upper plate, an outer wall, an inner wall defining a round central opening, a lower plate, and two or more conductive wires. Each of the conductive wires is wound one or more times in a respective portion of the electromagnet housing. Each of the conductive wires is operable to be individually connected to a power source.

[0007]

[0007] So that the above-mentioned features of the present disclosure can be understood in detail, a more particular description of the present disclosure briefly summarized above will be obtained by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the accompanying drawings illustrate only exemplary embodiments and therefore should not be considered as limiting the scope of the present disclosure, as other equally effective embodiments may also be permitted. [Brief explanation of the drawings]

[0008] [Figure 1A] 1 is a schematic cross-sectional view of a plasma enhanced chemical vapor deposition (PECVD) chamber having a rotating magnetic housing system with a rotating magnetic housing located outside the chamber, according to one embodiment. [Figure 1B]

[0009] 1 is a schematic top view of a rotating magnetic housing system according to one embodiment. FIG. [Figure 1C]

[0010] 1 is a schematic cross-sectional view of a PECVD chamber having an electromagnet housing system with an electromagnet magnetic housing located outside the chamber, according to one embodiment. [Figure 1D]

[0011] FIG. 1 is a schematic top view of an electromagnet housing system according to one embodiment. [Figure 1E]

[0012] 1 is a schematic cross-sectional view of a PECVD chamber having an electromagnet system according to one embodiment. [Figure 2]

[0013] 1 is a flow diagram of a method for controlling a concentration profile of a plasma formed in a processing space of a PECVD chamber, according to one embodiment. [Figure 3A]

[0014] 1 is a graph illustrating a concentration profile of plasma in a processing space according to one embodiment. [Figure 3B] 1 is a graph illustrating a concentration profile of plasma in a processing space according to one embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009]

[0015] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the figures. It is envisioned that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0010]

[0016] Embodiments described herein provide magnetic and electromagnet housing systems and methods for controlling characteristics of plasma generated within a processing space of a PECVD chamber to affect film deposition characteristics. In one embodiment, a plurality of retaining brackets are disposed within a rotating magnetic housing of the magnetic housing system. Each retaining bracket of the plurality of retaining brackets is disposed within the rotating magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets have a plurality of magnets removably disposed therein. Each magnet of the plurality of magnets is held by a respective retaining bracket with a pitch p between each magnet of the plurality of magnets, and the plurality of magnets are configured to travel a circular path when the rotating magnetic housing rotates around a circular central opening.

[0011]

[0017] 1A, 1C, and 1E are schematic cross-sectional views of a plasma enhanced chemical vapor deposition (PECVD) system 100 according to various embodiments. One example of the system 100 is a PRODUCER® system manufactured by Applied Materials, Inc., located in Santa Clara, California. It should be understood that the system described below is an exemplary chamber, and that other systems, including systems from other manufacturers, may be used with or modified to implement aspects of the present disclosure. The system 100 includes a chamber 101a (e.g., a first chamber) and a chamber 101b (e.g., a second chamber). In one embodiment, which can be combined with other embodiments described herein, the chambers 101a and 101b share resources. For example, the chambers 101a and 101b may share at least one or more gas sources 144, a mounting plate 112, and a pump 150. The chambers 101a and 101b are similarly configured. However, it is also contemplated that each of the chambers 101a and 101b may have dedicated resources.

[0012]

[0018] In the embodiment of FIG. 1A, each chamber 101a, 101b has a rotating magnetic housing system 102 including a rotating magnetic housing 104 disposed outside the chamber 101a, 101b. In the embodiment of FIG. 1C, each chamber 101a, 101b has an electromagnet housing system 170 including an electromagnet housing 172 disposed outside the chamber 101a, 101b. In the embodiment of FIG. 1E, each chamber 101a, 101b has an electromagnet system 171 disposed on a spacer 114 of the chamber lid assembly 108. While aspects of chamber 101a are discussed, it should be understood that chamber 101b is similarly equipped. In FIGS. 1A, 1C, and 1E, reference numerals may be omitted on chamber 101b for purposes of clarity.

[0013]

[0019] The chambers 101a, 101b include a chamber body assembly 106 and a chamber lid assembly 108. The chamber body assembly 106 of the embodiment of Figures 1A and 1C includes a chamber body 110 coupled to a mounting plate 112. The chamber lid assembly 108 of the embodiment of Figures 1A and 1C includes a spacer 114 having a first flange 118 coupled to the mounting plate 112 and a chamber lid 116 coupled to a second flange 120 of the spacer 114. The chamber lid assembly 108 of the embodiment of Figure 1E includes a spacer 114 having a first flange 118 coupled to the chamber body 110 and a chamber lid 116 coupled to the second flange 120 of the spacer 114. The chamber lid 116 includes a gas distribution assembly 122. The gas distribution assembly 122 is disposed opposite a substrate support assembly 124 that defines a processing space 126 therebetween. 1A and 1C is further defined by the chamber lid 116, the inner wall 128 of the spacer 114, the mounting plate 112, and the chamber body 110. The processing space 126 of the embodiment of FIG. 1E is further defined by the chamber lid 116, the inner wall 128 of the spacer 114, and the chamber body 110.

[0014]

[0020] The substrate support assembly 124 is disposed within the processing space 126. The substrate support assembly 124 includes a substrate support 130 and a stem 132. The substrate support 130 has a support surface 134 for supporting a substrate 165. The substrate support 130 typically includes a heating element (not shown). The substrate support 130 is movably disposed within the processing space 126 by the stem 132 extending through the chamber body 110, where the stem 132 is coupled to a substrate support drive system 136. The substrate support drive system 136 moves the substrate support 130 between an elevated processing position (as shown) and a lowered position that facilitates substrate movement into and out of the processing space 126 through a slit valve 138 formed through the chamber body 110. In one embodiment, which can be combined with other embodiments described herein, the substrate support drive system 136 rotates the stem 132 and the substrate support 130.

[0015]

[0021] In one embodiment, which can be combined with other embodiments described herein, the gas distribution assembly 122 is configured to uniformly distribute gas within the processing space 126 of the chambers 101 a, 101 b to facilitate deposition of a film, such as an advanced patterning film, on a substrate 165 disposed on the substrate support 130 of the substrate support assembly 124. In another embodiment, which can be combined with other embodiments described herein, the gas distribution assembly 122 is configured to uniformly distribute gas within the processing space 126 of the chambers 101 a, 101 b to facilitate etching of a film, such as an advanced patterning film, disposed on a substrate 165 positioned on the substrate support 130 of the substrate support assembly 124.

[0016]

[0022] The gas distribution assembly 122 includes a gas inlet passage 140 that supplies gas from flow controllers 142 coupled to one or more gas sources 144 through a diffuser 146 suspended from a hanger plate 148. The diffuser 146 includes a plurality of holes or nozzles (not shown) through which the gas mixture is injected into the processing space 126 during processing. A pump 150 is coupled to an outlet 152 of the chamber body 110 to control the pressure within the processing space 126 and to evacuate by-products from the processing space 126. The diffuser 146 of the gas distribution assembly 122 can be connected to an RF return (or ground) to allow RF energy applied to the substrate support 130 to generate an electric field within the processing space 126, which is used to generate a plasma for processing the substrate 165.

[0017]

[0023] The RF source 154 is coupled to an electrode 156 disposed within the substrate support 130 through a conductive rod 158 disposed through the stem 132. In one embodiment, which can be combined with other embodiments described herein, the electrode 156 is connected to the RF source 154 through a match box 163 having a matching circuit for adjusting electrical characteristics, such as voltage, current, and impedance, of the electrode 156 and a sensor for measuring the electrical characteristics. The matching circuit may facilitate adjusting the voltage, current, or impedance in response to signals from the sensor. The diffuser 146 of the gas distribution assembly 122 is connected to an RF return, and the electrode 156 facilitates the formation of a capacitive plasma coupling. The RF source 154 supplies RF energy to the substrate support 130, facilitating the generation of a capacitively coupled plasma between the substrate support 130 and the diffuser 146 of the gas distribution assembly 122. When RF power is supplied to the electrode 156, an electric field is generated between the diffuser 146 and the substrate support 130, causing atoms of the gas present in the processing space 126 between the substrate support 130 and the diffuser 146 to be ionized and release electrons. The ionized atoms accelerated to the substrate support 130 facilitate deposition or etching of a film on a substrate 165 disposed on the substrate support 130.

[0018]

[0024] 3A, the plasma has a density profile 301 within the processing space 126. The density profile 301 is defined as an ion density 302 (ions / au) at a location 304 on the horizontal plane 167 within the processing space 126. 3) The density profile 301 includes a peak 303 corresponding to a maximum value 305 of ion density and a width 307 corresponding to a diameter of the plasma. One of the rotating magnetic housing system 102, the electromagnet housing system 170, and the electromagnet system 171, and the methods described herein, provides control of the plasma density profile 301 to adjust the uniformity and properties of the deposited or etched film. In the embodiment of FIG. 1A, the magnet rotation speed, the magnet strength (Gauss), and the magnet vertical position may be adjusted to facilitate corresponding adjustments in the plasma density profile. In the embodiment of FIG. 1C, the electromagnet current flow, the electromagnet strength (Gauss), and the electromagnet vertical position may be adjusted to facilitate corresponding adjustments in the plasma density profile. In the embodiment of FIG. 1E, the electromagnet current flow and the electromagnet strength may be adjusted to facilitate corresponding adjustments in the plasma density profile. For example, adjustments may be made to one or more of the vertical position of the plasma relative to the substrate, the position of the peak of the density profile, or the value of the ion density at a particular position relative to the substrate.

[0019]

[0025] As shown in Figure 1A, a controller 164 coupled to the chambers 101a, 101b and the rotating magnetic housing system 102 is configured to control aspects of the chambers 101a, 101b and the rotating magnetic housing system 102 during processing. As shown in Figure 1C, a controller 164 coupled to the chambers 101a, 101b and the electromagnet housing system 170 is configured to control aspects of the chambers 101a, 101b and the electromagnet housing system 170 during processing. As shown in Figure 1E, a controller 164 coupled to the chambers 101a, 101b and the electromagnet system 171 is configured to control aspects of the chambers 101a, 101b and the electromagnet system 171 during processing.

[0020]

[0026] As shown in FIG. 3A , the strength of one of the magnets 143 and the core material of the electromagnet (shown in FIGS. 1C and 1E ) compresses the plasma density profile 301 in the processing space 126 and extends the plasma sheath toward the sidewall of the chamber body 110. Compressing the plasma density profile 301 results in a more uniform concentration of ions and radicals above the substrate 165 (relative height above the substrate) for a uniform deposition profile. In addition, compressing the density profile 301 extends the plasma sheath radially outward toward the sidewall of the chamber body 110. Extending the plasma sheath to the sidewall of the chamber body 110 provides a short, symmetrical path for RF energy to propagate from the sidewall to ground. The path for RF energy to propagate from the sidewall to ground improves current flow and reduces the amount of current required by the electrode 156 of the substrate support 130 through increased efficiency. Reducing the amount of current required by the electrode 156 allows for increased voltage to be supplied to the electrode 156 through increased efficiency. Increasing the voltage results in greater ionization of the plasma sheath due to increased ion or radical bombardment of the substrate 165. The increased ion or radical bombardment of the substrate 165 reduces the stress in the film being deposited or etched. Additionally, the compression of the density profile 301 and the extension of the plasma sheath provide a substantially uniform distribution of stress vectors in the deposited or etched film.

[0021]

[0027] 1B shows a schematic top view of the rotating magnetic housing system 102. Referring to FIGS. 1A and 1B, the rotating magnetic housing system 102 includes a rotating magnetic housing 104 configured to rotate about a central axis 103 of the processing space 126 to generate a static or dynamic magnetic field. The magnetic field modifies the plasma shape, ion and radical concentration, and the movement of the ion and radical concentration to control the density profile 301 of the plasma in the processing space 126.

[0022]

[0028] The rotating magnetic housing system 102, along with the rotating magnetic housing 104, is disposed outside the chambers 101a and 101b. The rotating magnetic housing system 102 includes an upper plate 105, a lower plate 107 disposed opposite the upper plate 105, an inner wall 109, an outer wall 113 disposed opposite the inner wall 109, a housing lift system 168, and a housing drive system 115. The inner side 128 defines a round central opening. In one embodiment that can be combined with other embodiments described herein, at least one of the upper plate 105, the lower plate 107, and the spacer 114 includes one or more channels (not shown) coupled to a heat exchanger (not shown) to control the temperature profile of the rotating magnetic housing 104. The outer wall 162 of the spacer 114 includes a polymer material such as PTFE (polytetrafluoroethylene). In one embodiment that can be combined with other embodiments described herein, the outer wall 162 is a sheet of a polymer material. The polymer material of the outer wall 162 of the spacer 114 allows the rotating magnetic housing 104 to rotate around the spacer 114 about the central axis 103 of the processing volume 126 .

[0023]

[0029] The rotatable magnetic housing 104 includes a plurality of retaining brackets 129. Each retaining bracket of the plurality of retaining brackets 129 is positioned within the rotatable magnetic housing 104 with a distance d between each retaining bracket 129. The plurality of retaining brackets 129 allow the plurality of magnets 143 to be placed within or removed from the rotatable magnetic housing 104. In one embodiment, each magnet 143 of the plurality of magnets 143 is held by the retaining bracket 129 with a pitch p between each magnet 143 of the plurality of magnets 143. The pitch p corresponds to the distance between adjacent magnets 143 of the plurality of magnets 143. The pitch p adjusts the magnetic field generated by rotating the rotatable magnetic housing 104. In one embodiment, which can be combined with other embodiments described herein, each of the retaining brackets 129 is coupled to a track 131. The retaining brackets 129 are operable such that each of the retaining brackets 129 slides radially along a track 131 to vary the horizontal distance 133 from each of the magnets 143 to the central axis 103 of the processing volume 126 .

[0024]

[0030] As shown in FIG. 1C , an electromagnet housing system 170 including an electromagnet housing 172 is disposed outside the chambers 101 a, 101 b. The electromagnet housing 172 includes an upper plate 173, a lower plate 174 disposed opposite the upper plate 173, an inner wall 176, an outer wall 175 disposed opposite the inner wall 176, and a housing lift system 168. The inner side 128 defines a round central opening. In one embodiment, which can be combined with other embodiments described herein, at least one of the upper plate 173, the lower plate 174, and the spacer 114 includes one or more channels (not shown) coupled to a heat exchanger (not shown) to control the temperature profile of the electromagnet housing 172. A conductive wire 178 is disposed within the electromagnet housing 172 and wrapped around the spacer 114 one or more times to form a single electromagnet surrounding the spacer 114. A power source 180 is coupled to the conductive wire 178 to pass a current in a circular path around the processing space 126. In one embodiment, which can be combined with other embodiments described herein, at least one turn of the conductive wire 178 is coupled to a track 181. The track 181 is actuated, and each turn of the conductive wire 178 coupled to one of the tracks 181 is operable to slide radially along the track 181 to vary the horizontal distance 133 from the conductive wire 178 to the central axis 103 of the processing space 126. As shown in FIG. 1E , the conductive wire 178 is disposed within the spacer 114 and is wound one or more times around the processing space 126.

[0025]

[0031] As shown in FIG. 1B , in one embodiment that can be combined with other embodiments described herein, a first half 137 (e.g., encompassing approximately 180 degrees) of the rotating magnetic housing 104 has a magnet 143 with a north pole 141 oriented toward the processing space 126, and a second half 139 (e.g., encompassing approximately 180 degrees) of the rotating magnetic housing 104 has a magnet 143 with a south pole 145 oriented away from the processing space 126. As shown in FIG. 3B , the first half 137 and second half 139 with oppositely oriented magnets 143 provide a shift in peak 303 of density profile 301. The opposite polarity of the magnets 143 distorts the magnetic field (B-field) generated through the magnets 143. The distortion of the magnetic field shifts peak 303 of density profile 301. The shift in peak 303 corresponds to a shift in the plasma sheath. The rotation of the rotating magnetic housing 104 facilitates more uniform exposure of the substrate 165 to the ions and radicals of the distorted plasma sheath.

[0026]

[0032] The rotating magnetic housing 104 is coupled to a housing drive system 115. The housing drive system 115 includes a belt 147 and a motor 149. The rotating magnetic housing 104 includes a plurality of grooves 151 formed in the outer wall 113 of the rotating magnetic housing 104. Each groove of the plurality of grooves 151 corresponds to one of a plurality of lugs 155 of a belt 161. The belt 161 is configured to be disposed around the rotating magnetic housing 104 and is coupled to a motor 149, such as a brushless DC electric motor. The housing drive system 115 is configured to rotate the rotating magnetic housing 104 about the central axis 103 of the processing space 126 at a rotational speed. The rotational speed controls the current in the substrate 165 resulting from the modified magnetic field. In one example, it is contemplated that each of the chambers 101 a, 101 b includes an individual housing drive system 115. In another example, it is contemplated that each of the chambers 101 a, 101 b share the housing drive system 115.

[0027]

[0033] 1C and 1E , which can be combined with other embodiments described herein, the conductive wire 178 includes at least one of voids in the core material of the conductive wire 178, a varying cross-sectional area of ​​the core material, and a varying distance between each turn of the conductive wire 178. The core material of the first half of the conductive wire 204 (e.g., encompassing approximately 180 degrees) may have more voids than the second half of the conductive wire 178 (e.g., encompassing approximately 180 degrees). The core material of the first half of the conductive wire 178 may have a larger cross-sectional area than the cross-sectional area of ​​the second half of the conductive wire 178. The distance between each turn of the conductive wire 178 in the first half may be smaller than the distance between each turn of the conductive wire 178 in the second half. Adjusting at least one of the voids, cross-sectional area, and distance between each turn of the conductive wire 178 distorts the magnetic field generated via the current flowing through the conductive wire 178. The circular flow of current facilitates more uniform exposure of the substrate 165 to the ions and radicals of the distorted plasma sheath.

[0028]

[0100] 1C and 1E, which can be combined with other embodiments described herein, electromagnet housing 172 (FIG. 1C) and electromagnet system 171 (FIG. 1E) include two or more conductive wires 178. Each of the conductive wires 178 of electromagnet housing 172 is disposed in a respective portion of electromagnet housing 172. In one embodiment that can be combined with other embodiments described herein, conductive wires 178 are disposed at equal intervals from one another within electromagnet housing 172. Each of the conductive wires 178 of electromagnet system 171 is disposed in a respective portion of spacer 110. In one embodiment that can be combined with other embodiments described herein, conductive wires 178 are disposed at equal intervals from one another within spacer 110. Power sources 180 (180a, 180b, 180c, and 180d, as shown in FIG. 1D) are individually coupled to each of conductive wires 178. Electrically operable power sources 180 are connectable to controller 164. The controller 164 is operable to control the supply of power to each of the conductive wires 178 by sequentially turning on and off each of the power supplies 180 and simultaneously turning on and off each of the power supplies 180. Simultaneously turning off each of the power supplies 180 allows for shunting of the magnetic field generated by the electromagnets. In one example, a first conductive wire is wound one or more times in a semicircular shape and placed in a first half of the electromagnet housing 172 (FIG. 1C) or spacer 110 (FIG. 1E) corresponding to a first half of the processing space 126. A second conductive wire is wound one or more times in a semicircular shape and placed in a second half of the electromagnet housing 172 (FIG. 1C) or spacer 110 (FIG. 1E) corresponding to a second half of the processing space 126. The first and second electromagnets may have opposite polarities.

[0029]

[0034] 1D is a schematic top view of the electromagnet housing system 170. In one example, the first conductive wire 178a is wound one or more times in a semicircle having an angular arc of 90 degrees or less and is disposed in a first quadrant 179a of the electromagnet housing 172 corresponding to the first quadrant 126a of the processing space 126 to form a first electromagnet. The second conductive wire 178b is wound one or more times in a semicircle having an angular arc of 90 degrees or less and is disposed in a second quadrant 179b of the electromagnet housing 172 corresponding to the second quadrant 126b of the processing space 126 to form a second electromagnet. The third conductive wire 178c is wound one or more times in a semicircle having an angular arc of 90 degrees or less and is disposed in a third quadrant 179c of the electromagnet housing 172 corresponding to the third quadrant 126c of the processing space 126 to form a third electromagnet. The fourth conductive wire 178d is wound one or more times in a semicircle having an arc of 90 degrees or less and is disposed in a fourth quadrant 179d of the electromagnet housing 172 corresponding to the fourth quadrant 126d of the processing volume 126 to form a fourth electromagnet. The first, second, third, and fourth electromagnets may have alternating polarities.

[0030]

[0035] The housing drive system 115 and the rotating magnetic housing 104 are coupled to a housing lift system 168. Coupling the housing drive system 115 and the rotating magnetic housing 104 to the housing lift system 168 facilitates vertical adjustment of the rotating magnetic housing 104 relative to the substrate 165. Coupling the electromagnet housing 172 to the housing lift system 168 facilitates vertical adjustment of the electromagnet housing 172 relative to the substrate 165. For example, the vertical distance 135 defined by a plane formed through the center of each of the magnets 143 to the substrate 165 can be increased or decreased to adjust the characteristics of the plasma maintained in the corresponding chamber 101 a or 101 b. For example, the vertical distance 182 defined by a plane formed through the center of the conductive wire 178 can be increased or decreased to adjust the characteristics of the plasma maintained in the corresponding chamber 101 a or 101 b. The housing lift system 168 is operable to raise and lower the rotating magnetic housing 104 and the housing drive system 115 simultaneously, although individual actuation is also contemplated. Raising and lowering the vertical distance 135, 182 from the substrate 165 adjusts the distance of the plasma sheath to the substrate 165, thereby controlling the movement of ion and radical concentrations to control properties such as uniformity and stress of the deposited or etched film. To facilitate vertical actuation, the housing lift system 168 may include one or more actuators, such as an electric motor, a stepper motor, a screwdriver with a threaded rod, or the like, to facilitate vertical actuation relative to the mounting plate 112. In one embodiment, which can be combined with other embodiments described herein, the motor 149 is coupled to the housing lift system 168 by a mount 157.

[0031]

[0036] In one embodiment, which can be combined with other embodiments described herein, the outer walls 113, 175 have a thickness 159. The material and thickness 159 of the outer walls 113, 175 control the magnetic permeability of the outer walls 113, 175, thereby confining the magnetic field to the processing space 126. As shown in FIG. 1E, the material and thickness of a shield 184 aligned with the conductive wire 178 and coupled to the outer wall 162 of the spacer 114 provides confinement of the magnetic field to the processing space 126. The confinement of the magnetic field to the processing space 126 mitigates the effect of the magnetic field on nearby processing spaces of adjacent processing chambers, thus improving process uniformity. 1A and 1C, in one embodiment that can be combined with other embodiments described herein, the chambers 101 a, 101 b include an actuated shield 186 operable to raise and lower such that an opening 190 in a body 188 of the actuated shield 186 is aligned with one of the conductive wire 178 and the magnet 143. In another embodiment that can be combined with other embodiments described herein, as shown in FIG. 1E, the chambers 101 a, 101 b include a shield 192 having an opening 196 in a body 194 of the shield 192 aligned with the conductive wire. The materials and thicknesses of the actuated shield 186 and the shield 192 provide for confinement of the magnetic field to the processing space 126.

[0032]

[0037] 2 is a flow diagram of a method 200 for controlling a density profile 301 of a plasma formed in the processing space 126 of a PECVD chamber. For ease of explanation, FIG. 2 will be described with reference to FIGS. 1A-1E. However, it should be noted that PECVD systems other than system 100 may be utilized in conjunction with method 200, and magnetic housing assemblies other than rotating magnetic housing system 102 may be utilized in conjunction with method 200.

[0033]

[0038] In step 201, a substrate 165 is placed on the support surface 134 of the substrate support 130. In one embodiment, the substrate is formed through the chamber body 110 and transferred into the chambers 101a, 101b through a slit valve 138 located on the substrate support 130. The substrate support 130 is then raised by the substrate support drive system 136 to an elevated processing position within the processing space 126.

[0034]

[0039] In step 202, one or more gases are supplied into the processing space 126 of chambers 101 a, 101 b at a flow rate. In one embodiment, a flow controller 142 supplies one or more gases from one or more gas sources 144 to a diffuser 146. The one or more gases are mixed and injected into the processing space 126 through multiple holes or nozzles in the diffuser 146. In one embodiment, the one or more gases are supplied sequentially to the diffuser 146, mixed in the diffuser 146, and injected into the processing space 126. In another embodiment, a pump 150 maintains the pressure in the processing space. Although the pump 150 is shown in FIG. 1A as being coupled to both chambers 101 a, 101 b, it is contemplated that each of the chambers 101 a, 101 b may utilize a separate pump 150.

[0035]

[0040] In step 203, RF power is applied to the mixture of one or more gases. In one embodiment, the RF source 154 supplies RF energy to the substrate support 130 to facilitate generation of a capacitively coupled plasma between the substrate support 130 and the diffuser 146 of the gas distribution assembly 122. RF power is supplied to the electrode 156, which creates an electric field between the diffuser 146 and the substrate support 130, causing atoms of the gas present in the process space 126 between the substrate support 130 and the diffuser 146 to ionize and release electrons. The ionized atoms are accelerated into the substrate support 130 to facilitate deposition or etching of a film on a substrate 165 disposed on the substrate support 130.

[0036]

[0041] In step 204, a density profile 301 of the plasma formed in the processing space 126 is adjusted. In one embodiment that can be combined with other embodiments described herein, the rotating magnetic housing 104 of the rotating magnetic housing system 102 rotates about the central axis 103 of the processing space 126 at a rotational speed via the housing drive system 115. At least one of the rotational speed, the horizontal distance 133 from each of the magnets 143 to the central axis 103, and the vertical distance 135 from the center of each of the magnets 143 to the substrate 165 can be adjusted during step 204. In one embodiment that can be combined with other embodiments described herein, a current is supplied to the conductive wire 178 in a circular path. The vertical distance 135 can be adjusted by raising and lowering at least one of the rotating magnetic housing 104 and the substrate support 130. The rotating magnetic housing 104 generates a dynamic magnetic field. The magnetic field modifies the plasma shape, ion and radical concentration, and ion and radical concentration movement to control the plasma density profile 301, ion density 302, and diameter. Controlling the plasma density profile 301, ion density 302, and diameter adjusts the uniformity and properties of the deposited film. Each magnet of the multiple magnets 143 is held by a holding bracket with a pitch p between each magnet of the multiple magnets 143. The pitch p corresponds to the distance between each adjacent magnet of the multiple magnets 143. The pitch p adjusts the magnetic field generated by rotating the rotating magnetic housing 104. Adjusting the vertical distance 135 modifies the distance of the plasma sheath relative to the substrate, thus controlling the movement of ion and radical concentration and controlling properties such as uniformity and stress of the deposited film.

[0037]

[0042] In another embodiment, at least one of the current, power, horizontal distance 133 from the conductive wires 178 to the central axis 103, and vertical distance 182 from the center of each of the conductive wires 178 to the substrate 165 can be adjusted during step 204. The vertical distance 182 can be adjusted by raising or lowering at least one of the electromagnet housing 172 and the substrate support 130. The electromagnet housing 172 generates a dynamic magnetic field. The magnetic field modifies the plasma shape, ion and radical concentration, and ion and radical movement to control the density profile 301, ion density 302, and plasma diameter. Controlling the plasma density profile 301, ion density 302, and diameter adjusts the uniformity and properties of the deposited film. Adjusting the vertical distance 182 modifies the distance of the plasma sheath relative to the substrate, thereby controlling ion and radical movement and controlling properties such as uniformity and stress of the deposited film.

[0038]

[0043] In one embodiment that can be combined with other embodiments described herein, in step 204, the first half 137 and second half 139 of the rotating magnetic housing 104 have oppositely oriented magnets 143. In another embodiment that can be combined with other embodiments described herein, in step 204, at least one of the air gap, cross-sectional area, and distance between each turn of the conductive wire 178 can be adjusted. In another embodiment that can be combined with other embodiments described herein, in step 204, power is sequentially supplied to two or more electromagnets having opposite or alternating polarities.

[0039]

[0044] In some embodiments, the substrate support drive system 136 rotates the substrate support 130 at a rotational speed around the central axis 103 of the processing volume 126. The strength of the magnets 143 is selected to position the peak of the plasma profile at a desired radial location above the surface of the substrate being processed. In embodiments including reversely oriented magnets 143, the magnetic field generated via the magnets 143 is distorted. In embodiments including adjusting at least one of the gap, cross-sectional area, and distance between each turn of the conductive wire 178, the magnetic field generated via the flow of current through the conductive wire 178 is distorted. In embodiments including sequentially powering two or more electromagnets with opposite or alternating polarities, the magnetic field generated via the flow of current through the conductive wire 178 is distorted. The distortion of the magnetic field shifts the peak of the plasma sheath. However, during processing, the rotation of the magnets 143 and the current flowing through the conductive wire 178 in a circular path around the processing volume 126 facilitates more uniform exposure of the substrate to the ions and radicals in the distorted plasma sheath. In other embodiments, the substrate rotates, resulting in a uniform deposition profile. In contrast, conventional processes utilize plasma profiles with peaks centered over the substrate, and such configurations result in non-uniform deposition (e.g., center-heavy deposition), even with substrate rotation, due to increased ion density at the center of the substrate relative to its radially outer edges.

[0040]

[0045] It is contemplated that aspects of the present disclosure may be utilized with permanent magnets, electromagnets, or a combination thereof. Additionally, it is contemplated that the magnets may be arranged in alternating polarity configurations, or that magnets of similarly oriented polarity may be arranged in groups, such as groups encompassing approximately 180 degrees.

[0041]

[0046] In summary, magnetic and electromagnet systems and methods for controlling the density profile of plasma formed within a processing space of a PECVD chamber are described herein. In one embodiment, a rotating magnetic housing is configured to rotate about a central axis of the processing space to generate a static or dynamic magnetic field. The magnetic field modifies the plasma shape, ion and radical concentration, and ion and radical concentration movement to control the plasma density profile. Controlling the plasma density profile adjusts the uniformity and properties of the deposited or etched film.

[0042]

[0047] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope thereof, the scope of which is determined by the following claims.

Claims

1. A chamber comprising: a chamber body; a chamber lid having a gas distribution assembly over the chamber body; a substrate support positioned in the chamber body opposite the gas distribution assembly to define a processing space between the substrate support and the gas distribution assembly; a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support; an electromagnet housing system having an electromagnet housing coupled to the chamber body; and the electromagnet housing comprises: Top plate, an inner wall defining a rounded central opening; an outer wall disposed opposite the inner wall; a lower plate disposed opposite the upper plate; and Two or more conductive wires each of the conductive wires is wound one or more times around a respective portion of the electromagnet housing, and each conductive wire is wound around a chamber spacer to form an electromagnet in a respective portion of the electromagnet housing. Chamber.

2. The chamber of claim 1 , wherein the two or more conductive wires have alternating polarities.

3. A chamber, a chamber body; a chamber lid having a gas distribution assembly; a substrate support positioned opposite the gas distribution assembly to define a processing space having a central axis; a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support; an electromagnet magnetic housing system having an electromagnet housing coupled to the chamber; and the electromagnet housing comprises: Top plate, outer wall, an inner wall defining a rounded central opening; a lower plate, and Two or more conductive wires each of the conductive wires is wound one or more times around a respective portion of the electromagnet housing, and each of the conductive wires is operable to be individually connected to a power source; The two or more conductive wires a first conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a first quadrant of the electromagnet housing corresponding to a first quadrant of the processing space; a second conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a second quadrant of the electromagnet housing corresponding to a second quadrant of the processing volume; a third conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a third quadrant of the electromagnet housing corresponding to a third quadrant of the processing space; and a fourth conductive wire wound one or more times in a semicircular shape having an arc of about 90 degrees or less and disposed in a fourth quadrant of the electromagnet housing corresponding to a fourth quadrant of the processing space; wherein the first, second, third and fourth conductive wires have alternating polarities.

4. The chamber of claim 1 , wherein the electromagnet housing is coupled to a housing lift system operable to raise and lower the electromagnet housing.

5. 10. The chamber of claim 1, further comprising an actuation shield operable to raise and lower such that openings in the actuation shield are aligned with the two or more conductive wires.

6. A chamber, a chamber body; a chamber lid having a gas distribution assembly; a substrate support positioned opposite the gas distribution assembly to define a processing space having a central axis; a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support; an electromagnet magnetic housing system having an electromagnet housing coupled to the chamber; and the electromagnet housing comprises: Top plate, outer wall, an inner wall defining a rounded central opening; a lower plate, and Two or more conductive wires each of the conductive wires is wound one or more times around a respective portion of the electromagnet housing, and each of the conductive wires is operable to be individually connected to a power source; The chamber, wherein the conductive wire is coupled to a track, the conductive wire being actuatable along the track.

7. The inner wall of the electromagnet housing is coupled to an outer wall of the chamber spacer, the chamber spacer comprising: a first flange coupled to a mounting plate of the chamber body; and a second flange connected to the chamber lid; The chamber of claim 1 , comprising:

8. A chamber comprising: a chamber body; a chamber lid having a gas distribution assembly over the chamber body; a substrate support positioned within the chamber body opposite the gas distribution assembly to define a processing space; a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support; an electromagnet magnetic housing system having an electromagnet housing coupled to the chamber; and the electromagnet housing comprises: Top plate, an inner wall defining a rounded central opening; an outer wall disposed opposite the inner wall; a lower plate disposed opposite the upper plate; a first conductive wire wound in a semicircular shape and disposed in a first half of the electromagnet housing corresponding to the first half of the processing space; and a second conductive wire wound in a semicircular shape and disposed in a second half of the electromagnet housing corresponding to a second half of the processing space; wherein the first conductive wire and the second conductive wire have opposite polarities.

9. The chamber of claim 8 , wherein the electromagnet housing is coupled to a housing lift system operable to raise and lower the electromagnet housing.

10. 10. The chamber of claim 8, further comprising an actuation shield operable to raise and lower such that openings in the actuation shield are aligned with the first and second conductive wires.

11. 9. The chamber of claim 8, wherein the first conductive wire and the second conductive wire are coupled to a track and are actuatable along the track.

12. The inner wall of the electromagnet housing is coupled to an outer wall of a chamber spacer, the chamber spacer comprising: a first flange coupled to a mounting plate of the chamber body; and a second flange connected to the chamber lid; 9. The chamber of claim 8, comprising:

13. A chamber comprising: a chamber body; a chamber lid having a gas distribution assembly; a substrate support positioned opposite the gas distribution assembly to define a processing space having a central axis; a radio frequency (RF) source operable to be coupled to an electrode disposed within the substrate support; an electromagnet magnetic housing system having an electromagnet housing coupled to the chamber; and the electromagnet housing comprises: Top plate, outer wall, an inner wall defining a rounded central opening; Lower plate, a first conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a first quadrant of the electromagnet housing corresponding to a first quadrant of the processing space; a second conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a second quadrant of the electromagnet housing corresponding to a second quadrant of the processing volume; a third conductive wire wound in a semicircular shape having an arc of about 90 degrees or less and disposed in a third quadrant of the electromagnet housing corresponding to a third quadrant of the processing space; and a fourth conductive wire wound one or more times in a semicircular shape having an arc of about 90 degrees or less and disposed in a fourth quadrant of the electromagnet housing corresponding to a fourth quadrant of the processing space; wherein the first, second, third and fourth conductive wires have alternating polarity and are operable to be individually connected to a power source.

14. The chamber of claim 13 , wherein the electromagnet housing is coupled to a housing lift system operable to raise and lower the electromagnet housing.

15. 14. The chamber of claim 13, further comprising an actuation shield operable to raise and lower such that openings in the actuation shield are aligned with the first, second, third, and fourth conductive wires.

16. 14. The chamber of claim 13, wherein the first, second, third, and fourth conductive wires are coupled to and actuatable along a track.

17. The inner wall of the electromagnet housing is coupled to an outer wall of a chamber spacer, the chamber spacer comprising: a first flange coupled to a mounting plate of the chamber body; and a second flange connected to the chamber lid; 14. The chamber of claim 13, comprising:

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