Semiconductor device and method for manufacturing the same

Abstract

To provide a semiconductor device capable of suppressing a tail current at the time of a recovery operation, and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device according to the present disclosure comprises a semiconductor substrate including an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a rear surface opposite to the upper surface of the semiconductor substrate. The diode region includes an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the rear surface side of the drift layer. In the drift layer, a first lifetime control region having a higher crystal defect density than that of other portions of the drift layer and proton is provided to the rear surface side with respect to the center in a thickness direction of the semiconductor substrate, and the maximum value of a donor concentration of the first lifetime control region is less than or equal to 1.0×1015 / cm3.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device. [Background technology]

[0002] Patent Document 1 discloses an insulated gate semiconductor device in which a first region and a second region are provided on a substrate so as to be adjacent to the first region. The first region operates as an IGBT (Insulated Gate Bipolar Transistor), and the second region operates as a diode. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 5103830 Summary of the Invention [Problem to be solved by the invention]

[0004] In a reverse-conducting (RC)-IGBT such as that described in Patent Document 1, heat dissipation can be improved compared to when the IGBT and diode are formed separately. This allows for a smaller effective area and a higher current density. On the other hand, an RC-IGBT has a high current density in the diode region and a high carrier density. This makes it difficult to remove carriers during recovery operation, which can result in the generation of a tail current. As a result, there is a possibility that the recovery loss Err cannot be sufficiently reduced.

[0005] The present disclosure has been made to solve the above-mentioned problems, and has an object to provide a semiconductor device and a method for manufacturing the semiconductor device that can suppress tail current during recovery operation. [Means for solving the problem]

[0006] A semiconductor device according to a first disclosure includes a semiconductor substrate having an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a back surface of the semiconductor substrate opposite to the upper surface, wherein the diode region has an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the back surface side of the drift layer, and a first lifetime control region having a crystal defect density higher than that of other portions of the drift layer and containing protons is provided on a part of the drift layer closer to the back surface side than the center in the thickness direction of the semiconductor substrate, and the first lifetime control region has a maximum donor concentration of 1.0 × 10 15 / cm 3 a position where the donor concentration of the first lifetime control region is maximum is located on the back surface side of the semiconductor substrate from the center in the thickness direction, an n-type buffer layer is provided on the back surface side of the drift layer at a position deeper from the back surface than the cathode layer, and the donor concentration of the buffer layer is 50 times or more the maximum value of the donor concentration of the first lifetime control region, and the buffer layer is formed of phosphorus. In the thickness direction of the semiconductor substrate, the distance between the peak position of the crystal defect density of the first lifetime control region and the center of the semiconductor substrate in the thickness direction is smaller than the distance between the peak position and the back surface of the semiconductor substrate. .

[0007] A semiconductor device according to a second disclosure includes a semiconductor substrate having an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a back surface of the semiconductor substrate opposite to the upper surface, the diode region having an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the back surface side of the drift layer, and a portion of the drift layer closer to the back surface than the center in the thickness direction of the semiconductor substrate has a crystal defect density higher than other portions of the drift layer and has protons. a first lifetime control region is provided, the maximum donor concentration of the first lifetime control region is 10 times or less the donor concentration of the other portions of the drift layer, the position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on the back surface side of the drift layer at a position deeper from the back surface than the cathode layer, the donor concentration of the buffer layer is 50 times or more the maximum donor concentration of the first lifetime control region, and the buffer layer is made of phosphorus. A semiconductor device according to a third disclosure includes a semiconductor substrate having an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a back surface of the semiconductor substrate opposite to the upper surface, wherein the diode region has an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the back surface side of the drift layer, and a first lifetime control region having a crystal defect density higher than that of other portions of the drift layer and containing protons is provided on a part of the drift layer closer to the back surface side than the center in the thickness direction of the semiconductor substrate, and the first lifetime control region has a maximum donor concentration of 1.0 × 10 15 / cm 3 the position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on the back surface side of the drift layer at a position deeper from the back surface than the cathode layer, and the donor concentration of the buffer layer is 50 times or more the maximum value of the donor concentration of the first lifetime control region, the buffer layer is formed of phosphorus, and the thickness of the semiconductor substrate is 180 μm or less. A semiconductor device according to a fourth disclosure includes a semiconductor substrate having an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a back surface of the semiconductor substrate opposite to the upper surface, wherein the diode region has an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the back surface side of the drift layer, and a first lifetime control region having a crystal defect density higher than that of other portions of the drift layer and containing protons is provided on a part of the drift layer closer to the back surface than the center in the thickness direction of the semiconductor substrate, and the first lifetime control region has a maximum donor concentration of 1.0 × 10 15 / cm 3 the position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on the back surface side of the drift layer at a position deeper from the back surface than the cathode layer, and the donor concentration of the buffer layer is 50 times or more the maximum value of the donor concentration of the first lifetime control region, the buffer layer is formed of phosphorus, the IGBT region has a p-type base layer on the upper surface side of the semiconductor substrate, and the anode layer has a lower acceptor concentration than the base layer. A semiconductor device according to a fifth disclosure includes a semiconductor substrate having an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate, and a second electrode provided on a back surface of the semiconductor substrate opposite to the upper surface, wherein the diode region has an n-type drift layer, a p-type anode layer provided on the upper surface side of the drift layer, and an n-type cathode layer provided on the back surface side of the drift layer, and a first lifetime control region having a crystal defect density higher than that of other portions of the drift layer and containing protons is provided on a part of the drift layer closer to the back surface side than the center in the thickness direction of the semiconductor substrate, and the first lifetime control region has a maximum donor concentration of 1.0 × 10 15 / cm 3 the position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center of the semiconductor substrate in the thickness direction, an n-type buffer layer is provided on the back surface side of the drift layer at a position deeper from the back surface than the cathode layer, and the donor concentration of the buffer layer is 50 times or more the maximum value of the donor concentration of the first lifetime control region, and the buffer layer is formed of phosphorus, and a second lifetime control region having protons and a crystal defect density higher than that of other parts of the drift layer is provided on the back surface side of the center of the semiconductor substrate in the thickness direction in the IGBT region.

[0009] A sixth disclosure relates to a method for manufacturing a semiconductor device, which includes forming a p-type base layer provided on an upper surface side of an IGBT region in an n-type semiconductor substrate, an n-type source layer provided on the upper surface side of the base layer, and a p-type anode layer provided on an upper surface side of a diode region in the semiconductor substrate, injecting protons at a first acceleration energy from a back surface side opposite to the upper surface of the diode region, heating the region into which protons are injected at the first acceleration energy at a temperature of less than 350° C. to form a lifetime control region, injecting phosphorus from the back surface side of the diode region to a depth shallower than the lifetime control region, heating the region into which phosphorus is implanted, and forming a p-type anode layer on the back surface side of the lifetime control region. an n-type buffer layer is formed; a p-type collector layer is provided on the back surface side of the IGBT region; and an n-type cathode layer is provided in the diode region on the back surface side of the buffer layer, wherein the position where the donor concentration of the lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, and the donor concentration of the buffer layer is 50 times or more the maximum value of the donor concentration of the lifetime control region; the diode region has an n-type drift layer, the anode layer provided on the upper surface side of the drift layer, and the cathode layer provided on the back surface side of the drift layer, Other The donor concentration is 10 times lower than that of the donor concentration in the [Effects of the Invention]

[0010] In the semiconductor device and the method for manufacturing the semiconductor device according to the present disclosure, the tail current during recovery operation can be suppressed by the lifetime control region. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a plan view of a semiconductor device according to a first embodiment. [Figure 2] FIG. 10 is a plan view of a semiconductor device according to a modification of the first embodiment. [Figure 3] 1 is a plan view of an IGBT region according to a first embodiment. [Figure 4]FIG. 4 is a cross-sectional view obtained by cutting FIG. 3 along the line AA. [Figure 5] FIG. 4 is a cross-sectional view obtained by cutting FIG. 3 along line BB. [Figure 6] FIG. 2 is a plan view of a diode region according to the first embodiment. [Figure 7] 7 is a cross-sectional view obtained by cutting FIG. 6 along line CC. [Figure 8] FIG. 7 is a cross-sectional view obtained by cutting FIG. 6 along the line DD. [Figure 9] 3 is a cross-sectional view showing the configuration of the boundary between the IGBT region and the diode region according to the first embodiment. FIG. [Figure 10] FIG. 2 is a cross-sectional view showing the configuration of a termination region according to the first embodiment. [Figure 11] FIG. 2 is a cross-sectional view showing the configuration of a termination region according to the first embodiment. [Figure 12] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 13] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 14] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 15] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 16] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 17] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 18] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 19] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 20] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 21] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 22] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 23] 2A to 2C are diagrams illustrating a method for manufacturing a semiconductor device according to the first embodiment. [Figure 24] FIG. 2 is a diagram illustrating a lifetime control region according to the first embodiment. [Figure 25] FIG. 3 is a diagram illustrating donor concentrations according to the first embodiment. [Figure 26] FIG. 1 is a diagram illustrating the range of protons in silicon. [Figure 27] FIG. 10 is a cross-sectional view of a diode region according to a second embodiment. [Figure 28] FIG. 10 is a diagram illustrating carrier density according to the second embodiment. [Figure 29] FIG. 11 is a cross-sectional view showing the configuration of the boundary between the IGBT region and the diode region according to the third embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] Semiconductor devices and semiconductor device manufacturing methods according to each embodiment will be described with reference to the drawings. The same or corresponding components will be assigned the same reference numerals, and repeated description may be omitted. In the following description, n and p indicate the conductivity type of the semiconductor, n- indicates an impurity concentration lower than n, and n+ indicates an impurity concentration higher than n. Similarly, p- indicates an impurity concentration lower than p, and p+ indicates an impurity concentration higher than p.

[0013] Embodiment 1 FIG. 1 is a plan view of a semiconductor device 100 according to a first embodiment. FIG. 2 is a plan view of a semiconductor device 101 according to a modification of the first embodiment. The semiconductor devices 100 and 101 are RC-IGBTs. The semiconductor devices 100 and 101 include a semiconductor substrate having an IGBT region 10 and a diode region 20. In the semiconductor device 100, the IGBT region 10 and the diode region 20 are arranged in a stripe pattern. The semiconductor device 100 may be called a "striped type." The semiconductor device 101 has a plurality of diode regions 20 arranged in the vertical and horizontal directions. The IGBT region 10 is arranged around the diode region 20. The semiconductor device 101 may be called an "island type."

[0014] First, the structure of the semiconductor device 100 will be described. The semiconductor device 100 includes an IGBT region 10 and a diode region 20 within the semiconductor device. The IGBT region 10 and the diode region 20 extend from one end to the other end of the semiconductor device 100. The IGBT region 10 and the diode region 20 are alternately arranged in stripes in a direction perpendicular to the extension direction of the IGBT region 10 and the diode region 20. FIG. 1 shows three IGBT regions 10 and two diode regions. All of the diode regions 20 are sandwiched between the IGBT regions 10. The number of IGBT regions 10 may be three or more or three or less. The number of diode regions 20 may be two or more or two or less. The positions of the IGBT regions 10 and the diode regions 20 in FIG. 1 may be interchanged. That is, all of the IGBT regions 10 may be sandwiched between the diode regions 20. The IGBT regions 10 and the diode regions 20 may be adjacent to each other, one by one.

[0015] A pad region 40 is provided adjacent to the IGBT region 10 on the lower side of the paper. The pad region 40 is a region where a control pad 41 for controlling the semiconductor device 100 is provided. The IGBT region 10 and the diode region 20 are collectively called a cell region. A termination region 30 is provided around the combined region of the cell region and pad region 40 to maintain the breakdown voltage of the semiconductor device 100.

[0016] The termination region 30 may be provided with a known breakdown voltage support structure that is appropriately selected. Examples of breakdown voltage support structures include a field limiting ring (FLR) or variation of lateral doping (VLD). The FLR is composed of a p-type termination well layer provided on the upper surface of the semiconductor substrate so as to surround the cell region. The VLD is composed of a p-type well layer that surrounds the cell region and has a concentration gradient. The number of ring-shaped p-type termination well layers used in the FLR and the concentration distribution used in the VLD may be appropriately selected depending on the breakdown voltage design of the semiconductor device 100. Alternatively, a p-type termination well layer may be provided over the entire pad region 40. An IGBT cell or a diode cell may be provided in the pad region 40.

[0017] The control pads 41 include, for example, a current sense pad 41a, a Kelvin emitter pad 41b, a gate pad 41c, and temperature sense diode pads 41d and 41e. The current sense pad 41a is a control pad for detecting the current flowing in the cell region. The current sense pad 41a is electrically connected to some IGBT cells or diode cells in the cell region so that a current that is a fraction to several tens of thousands of the current flowing in the entire cell region flows through the current sense pad 41a.

[0018] The Kelvin emitter pad 41b and the gate pad 41c are control pads to which a gate drive voltage is applied for on / off control of the semiconductor device 100. The Kelvin emitter pad 41b is electrically connected to the p-type base layer and n+ type source layer of the IGBT cell. The gate pad 41c is electrically connected to the gate trench electrode of the IGBT cell. The Kelvin emitter pad 41b and the p-type base layer may be electrically connected via a p+ type contact layer.

[0019] The temperature sensing diode pads 41d and 41e are control pads electrically connected to the anode and cathode of a temperature sensing diode provided in the semiconductor device 100. The temperature sensing diode pads 41d and 41e enable measurement of the voltage between the anode and cathode of a temperature sensing diode (not shown) provided in the cell region, thereby measuring the temperature of the semiconductor device 100.

[0020] Next, the structure of the semiconductor device 101 will be described. In the semiconductor device 101, the diode region 20 is surrounded by the IGBT region 10. That is, a plurality of diode regions 20 are provided in the IGBT region 10 in an island-like manner. In FIG. 2, the diode regions 20 are provided in a matrix of four columns in the left-right direction of the page and two rows in the upper-right direction of the page. However, this is not limiting, and it is sufficient that one or a plurality of diode regions 20 are provided scattered within the IGBT region 10, and each diode region 20 is surrounded by the IGBT region 10. The structures of the pad region 40 and the termination region 30 are the same as those of the semiconductor device 100.

[0021] FIG. 3 is a plan view of the IGBT region 10 according to the first embodiment. FIG. 3 is an enlarged view of a region surrounded by a dashed line 82 shown in FIG. 1 or 2. FIG. 4 is a cross-sectional view obtained by cutting FIG. 3 along line AA. FIG. 5 is a cross-sectional view obtained by cutting FIG. 3 along line BB. As shown in FIG. 3, the IGBT region 10 has active trench gates 11 and dummy trench gates 12 arranged in a stripe pattern. In the semiconductor device 100, the active trench gates 11 and dummy trench gates 12 extend in the longitudinal direction of the IGBT region 10. The longitudinal direction of the IGBT region 10 is the longitudinal direction of the active trench gates 11 and dummy trench gates 12. On the other hand, in the semiconductor device 101, there is no distinction between the longitudinal direction and the lateral direction of the IGBT region 10. In the semiconductor device 101, the longitudinal direction of the active trench gates 11 and dummy trench gates 12 may be the left-right direction of the paper. The vertical direction of the paper may be the longitudinal direction of the active trench gate 11 and the dummy trench gate 12.

[0022] In the active trench gate 11, a gate trench electrode 11a is provided in a trench formed in the semiconductor substrate via a gate trench insulating film 11b. In the dummy trench gate 12, a dummy trench electrode 12a is provided in a trench formed in the semiconductor substrate via a dummy trench insulating film 12b. The gate trench electrode 11a of the active trench gate 11 is electrically connected to a gate pad 41c. The dummy trench electrode 12a of the dummy trench gate 12 is electrically connected to an emitter electrode 6 provided on the upper surface of the semiconductor substrate.

[0023] The n+ type source layer 13 contacts the gate trench insulating film 11b on both sides in the width direction of the active trench gate 11. The n+ type source layer 13 contains, for example, arsenic or phosphorus as an n-type impurity. The concentration of the n-type impurity in the n+ type source layer 13 is 1.0×10 17 / cm 3 ~1.0×10 20 / cm 3 The n+ type source layers 13 are alternately provided with the p+ type contact layers 14 along the extension direction of the active trench gates 11. The p+ type contact layers 14 are also provided between two adjacent dummy trench gates 12. The p+ type contact layers 14 contain, for example, boron or aluminum as p-type impurities. The concentration of the p-type impurities in the p+ type contact layers 14 is 1.0×10 15 / cm 3 ~1.0×10 20 / cm 3 The source layer may also be called the emitter layer.

[0024] As shown in FIG. 3 , in the IGBT region 10, three active trench gates 11 are lined up next to three dummy trench gates 12. Also, three active trench gates 11 are lined up next to three dummy trench gates 12. That is, in the IGBT region 10, sets of active trench gates 11 and sets of dummy trench gates 12 are lined up alternately. The number of active trench gates 11 included in one set of active trench gates 11 may be one or more. Also, the number of dummy trench gates 12 included in one set of dummy trench gates 12 may be one or more, or may be zero. That is, all of the trenches provided in the IGBT region 10 may be active trench gates 11.

[0025] The semiconductor substrate has an n-type drift layer 1. The n-type drift layer 1 contains, for example, arsenic or phosphorus as an n-type impurity. The concentration of the n-type impurity in the n-type drift layer 1 is 1.0×10 12 / cm 3 ~1.0×10 15 / cm 3 In Figure 4, the semiconductor substrate ranges from n+ type source layer 13 and p+ type contact layer 14 to p type collector layer 16. In Figure 4, the upper ends of n+ type source layer 13 and p+ type contact layer 14 on the page are called the upper surface of the semiconductor substrate, and the lower end of p type collector layer 16 on the page are called the back surface of the semiconductor substrate. The back surface is the surface opposite to the top surface.

[0026] In the IGBT region 10, an n-type carrier accumulation layer 2 having a higher concentration of n-type impurities than the n-type drift layer 1 is provided on the upper surface side of the n-type drift layer 1. The n-type carrier accumulation layer 2 contains, for example, arsenic or phosphorus as the n-type impurity. The concentration of the n-type impurity in the n-type carrier accumulation layer 2 is 1.0×10 13 / cm3~1.0×10 17 / cm 3It is noted that the n-type carrier accumulation layer 2 may not be provided, and the n-type drift layer 1 may also be provided in the region of the n-type carrier accumulation layer 2. The n-type carrier accumulation layer 2 can reduce the current loss when a current flows through the IGBT region 10. The n-type carrier accumulation layer 2 and the n-type drift layer 1 may be collectively referred to as the drift layer.

[0027] In the method for forming the n-type carrier accumulation layer 2, first, n-type impurities are ion-implanted into a semiconductor substrate having an n-type drift layer 1. Then, annealing is performed to diffuse the implanted n-type impurities into the n-type drift layer 1. At this time, the impurity concentration may change gradually near the boundary between the n-type carrier accumulation layer 2 and the n-type drift layer 1.

[0028] A p-type base layer 15 is provided on the upper surface side of the n-type carrier accumulation layer 2. The p-type base layer 15 contains, for example, boron or aluminum as a p-type impurity. The concentration of the p-type impurity in the p-type base layer 15 is 1.0×10 12 / cm 3 ~1.0×10 19 / cm 3 The p-type base layer 15 is in contact with the gate trench insulating film 11b of the active trench gate 11. An n+ type source layer 13 is provided on the upper surface side of the p-type base layer 15 in contact with the gate trench insulating film 11b of the active trench gate 11. A p+ type contact layer 14 is provided in an area of ​​the upper surface side of the p-type base layer 15 other than the n+ type source layer 13. The n+ type source layer 13 and the p+ type contact layer 14 form the upper surface of the semiconductor substrate.

[0029] The p+ type contact layer 14 is a region having a higher concentration of p-type impurities than the p-type base layer 15. When it is necessary to distinguish between the p+ type contact layer 14 and the p-type base layer 15, they may be referred to individually. The p+ type contact layer 14 and the p-type base layer 15 may be collectively referred to as the p-type base layer.

[0030] An n-type buffer layer 3 having a higher concentration of n-type impurities than the n-type drift layer 1 is provided on the back surface side of the n-type drift layer 1. The n-type buffer layer 3 is provided to prevent punch-through of a depletion layer extending from the p-type base layer 15 to the back surface side when the semiconductor device 100 or 101 is in an off state. The n-type buffer layer 3 is formed by implanting, for example, phosphorus or protons. The n-type buffer layer 3 may also be formed by implanting both phosphorus and protons. The concentration of n-type impurities in the n-type buffer layer 3 is 1.0×10 14 / cm 3 ~1.0×10 18 / cm 3 is.

[0031] It is also possible to provide an n-type drift layer 1 in the region of the n-type buffer layer 3 shown in Fig. 4 without providing the n-type buffer layer 3. The n-type buffer layer 3 and the n-type drift layer 1 may be collectively referred to as the drift layer.

[0032] A p-type collector layer 16 is provided on the back surface side of the n-type buffer layer 3. The p-type collector layer 16 contains, for example, boron or aluminum as a p-type impurity. The concentration of the p-type impurity in the p-type collector layer 16 is 1.0×10 16 / cm 3 ~1.0×10 20 / cm 3 The p-type collector layer 16 forms the back surface of the semiconductor substrate. The p-type collector layer 16 is provided not only in the IGBT region 10 but also in the termination region 30. The portion of the p-type collector layer 16 provided in the termination region 30 is a p-type termination collector layer 16a. Furthermore, a portion of the p-type collector layer 16 may be provided so as to extend from the IGBT region 10 into the diode region 20.

[0033] The trench penetrates the p-type base layer 15 from the upper surface of the semiconductor substrate and reaches the n-type drift layer 1. In the active trench gate 11, the gate trench electrode 11a faces the n-type drift layer 1 via the gate trench insulating film 11b. In the dummy trench gate 12, the dummy trench electrode 12a faces the n-type drift layer 1 via the dummy trench insulating film 12b. The gate trench insulating film 11b is in contact with the p-type base layer 15 and the n+ type source layer 13. When a gate drive voltage is applied to the gate trench electrode 11a, a channel is formed in the p-type base layer 15 in contact with the gate trench insulating film 11b.

[0034] An interlayer insulating film 4 is provided on the gate trench electrode 11a of the active trench gate 11. A barrier metal 5 is formed on the interlayer insulating film 4 and in regions of the upper surface of the semiconductor substrate where the interlayer insulating film 4 is not provided. The barrier metal 5 is, for example, a conductor containing titanium. The barrier metal 5 may be titanium nitride or TiSi, which is an alloy of titanium and silicon. The barrier metal 5 is in ohmic contact and electrically connected to the n+ type source layer 13, the p+ type contact layer 14, and the dummy trench electrode 12a.

[0035] An emitter electrode 6 is provided on the barrier metal 5. The emitter electrode 6 is a first electrode provided on the upper surface of the semiconductor substrate. The emitter electrode 6 is formed of, for example, an aluminum alloy such as an aluminum-silicon alloy. The emitter electrode 6 may be an electrode made of a multi-layer metal film. In the multi-layer metal film, for example, a plating film formed by electroless plating or electrolytic plating is provided on an electrode made of an aluminum alloy. The plating film formed by electroless plating or electrolytic plating is, for example, a nickel plating film.

[0036] The emitter electrode 6 may not be able to fill a small area, such as between adjacent interlayer insulating films 4. In this case, tungsten, which has better filling properties than the emitter electrode 6, may be placed in the small area and the emitter electrode 6 may be formed on the tungsten. Alternatively, the emitter electrode 6 may be formed on the semiconductor substrate without providing a barrier metal 5. Alternatively, the barrier metal 5 may be provided only on an n-type semiconductor layer, such as the n+-type source layer 13. The barrier metal 5 and the emitter electrode 6 may be collectively referred to as the emitter electrode. In FIG. 4, the interlayer insulating film 4 is not provided on the dummy trench electrode 12a. The interlayer insulating film 4 may be formed on the dummy trench electrode 12a. In this case, the emitter electrode 6 and the dummy trench electrode 12a may be electrically connected in another cross section.

[0037] A collector electrode 7 is provided on the back surface side of the p-type collector layer 16. The collector electrode 7 is a second electrode provided on the back surface of the semiconductor substrate. Like the emitter electrode 6, the collector electrode 7 may be made of an aluminum alloy or an aluminum alloy and a plating film. The collector electrode 7 may also have a different structure from the emitter electrode 6. The collector electrode 7 is in ohmic contact with the p-type collector layer 16 and is electrically connected to the p-type collector layer 16.

[0038] Unlike the AA cross section shown in Figure 4, the n+ type source layer 13 is not visible in the BB cross section shown in Figure 5. In other words, the n+ type source layer 13 is selectively provided on the upper surface side of the p-type base layer. Note that the p-type base layer referred to here refers to the p-type base layer 15 and the p+ type contact layer 14 collectively.

[0039] FIG. 6 is a plan view of the diode region 20 according to the first embodiment. FIG. 6 is an enlarged view of the region surrounded by the dashed line 83 shown in FIG. 1 or 2. FIG. 7 is a cross-sectional view obtained by cutting FIG. 6 along the line CC. FIG. 8 is a cross-sectional view obtained by cutting FIG. 6 along the line DD. The diode trench gate 21 extends from one end side of the diode region 20 to the opposing other end side. In the diode trench gate 21, a diode trench electrode 21a is provided in a trench formed in a semiconductor substrate via a diode trench insulating film 21b.

[0040] The diode trench electrode 21a faces the n- type drift layer 1 via the diode trench insulating film 21b. A p+ type contact layer 24 and a p-type anode layer 25 are provided between two adjacent diode trench gates 21. The p+ type contact layer 24 contains, for example, boron or aluminum as a p-type impurity. The concentration of the p-type impurity in the p+ type contact layer 24 is 1.0×10 15 / cm 3 ~1.0×10 20 / cm 3 The p-type anode layer 25 contains, for example, boron or aluminum as a p-type impurity. The concentration of the p-type impurity is 1.0×10 12 / cm 3 ~1.0×10 19 / cm 3 The p+ type contact layers 24 and the p type anode layers 25 are alternately provided in the longitudinal direction of the diode trench gate 21.

[0041] The diode region 20 has an n-type drift layer 1, just like the IGBT region 10. The n-type drift layer 1 of the diode region 20 and the n-type drift layer 1 of the IGBT region 10 are continuously and integrally configured. In FIG. 7, the semiconductor substrate extends from the p+ type contact layer 24 to the n+ type cathode layer 26. In FIG. 7, the upper end of the p+ type contact layer 24 on the page is called the upper surface of the semiconductor substrate, and the lower end of the n+ type cathode layer 26 on the page is called the back surface of the semiconductor substrate. The upper surface of the diode region 20 and the upper surface of the IGBT region 10 are flush with each other. The back surface of the diode region 20 and the back surface of the IGBT region 10 are also flush with each other.

[0042] In the diode region 20, as in the IGBT region 10, an n-type carrier accumulation layer 2 is provided on the upper surface side of the n-type drift layer 1, and an n-type buffer layer 3 is provided on the back surface side of the n-type drift layer 1. The n-type carrier accumulation layer 2 and n-type buffer layer 3 in the diode region 20 have the same configuration as the n-type carrier accumulation layer 2 and n-type buffer layer 3 in the IGBT region 10. Even when the IGBT region 10 has an n-type carrier accumulation layer 2, the diode region 20 does not necessarily have to have an n-type carrier accumulation layer 2. As in the IGBT region 10, the n-type drift layer 1, n-type carrier accumulation layer 2, and n-type buffer layer 3 may be collectively referred to as the drift layer.

[0043] A p-type anode layer 25 is provided on the upper surface side of the n-type carrier accumulation layer 2. The p-type anode layer 25 is provided between the n-type drift layer 1 and the upper surface of the semiconductor substrate. The p-type anode layer 25 and the p-type base layer 15 of the IGBT region 10 may have the same concentration of p-type impurities. The p-type anode layer 25 and the p-type base layer 15 may be formed simultaneously.

[0044] A p+-type contact layer 24 is provided on the upper surface side of the p-type anode layer 25. The concentration of p-type impurities in the p+-type contact layer 24 may be the same as or different from the p-type impurities in the p+-type contact layer 14 in the IGBT region 10. The p+-type contact layer 24 forms the upper surface of the semiconductor substrate. The p+-type contact layer 24 has a higher concentration of p-type impurities than the p-type anode layer 25. When it is necessary to distinguish between the p+-type contact layer 24 and the p-type anode layer 25, they may be referred to individually. The p+-type contact layer 24 and the p-type anode layer 25 may be collectively referred to as the p-type anode layer.

[0045] In the diode region 20, an n+ type cathode layer 26 is provided on the back surface side of the n- type buffer layer 3. The n+ type cathode layer 26 is provided between the n- type drift layer 1 and the back surface of the semiconductor substrate. The n+ type cathode layer 26 contains, for example, arsenic or phosphorus as an n-type impurity. The concentration of the n-type impurity in the n+ type cathode layer 26 is 1.0×10 16 / cm 3 ~1.0×10 21 / cm 3 The n+ type cathode layer 26 is provided in part or the entirety of the diode region 20. The n+ type cathode layer 26 forms the back surface of the semiconductor substrate.

[0046] Although not shown, p-type impurities may be further selectively implanted into the region where the n+ type cathode layer 26 is formed. This results in a p+ type cathode layer being formed in a portion of the n+ type cathode layer 26. The n+ type cathode layers and p+ type cathode layers may be alternately arranged along the back surface of the semiconductor substrate. Such a diode is called an RFC (Relaxed Field of Cathode) diode.

[0047] In the diode region 20, the trench penetrates the p-type anode layer 25 from the upper surface of the semiconductor substrate and reaches the n-type drift layer 1. The diode trench electrode 21a faces the n-type drift layer 1 via the diode trench insulating film 21b.

[0048] As shown in FIG. 7 , a barrier metal 5 is provided on the diode trench electrode 21a and the p+ type contact layer 24. The barrier metal 5 is in ohmic contact with and electrically connected to the diode trench electrode 21a and the p+ type contact layer 24. The barrier metal 5 may have the same configuration as the barrier metal 5 in the IGBT region 10. An emitter electrode 6 is provided on the barrier metal 5. The emitter electrode 6 provided in the diode region 20 is formed continuously with the emitter electrode 6 provided in the IGBT region 10.

[0049] As in the case of the IGBT region 10, the diode trench electrode 21a and the p+-type contact layer 24 may be in ohmic contact with the emitter electrode 6 without providing the barrier metal 5. In FIG. 7, the interlayer insulating film 4 is not provided on the diode trench electrode 21a. However, the interlayer insulating film 4 may be formed on the diode trench electrode 21a. In this case, the emitter electrode 6 and the diode trench electrode 21a may be electrically connected at another cross section.

[0050] A collector electrode 7 is provided on the back surface side of the n+ type cathode layer 26. The collector electrode 7 of the diode region 20 is formed continuously with the collector electrode 7 provided in the IGBT region 10. The collector electrode 7 is in ohmic contact with the n+ type cathode layer 26 and is electrically connected thereto.

[0051] 7, the DD cross section shown in Fig. 8 does not show the p+ type contact layer 24. In other words, the p-type anode layer 25 forms the upper surface of the semiconductor substrate. The p+ type contact layer 24 is selectively provided on the upper surface side of the p-type anode layer 25.

[0052] 7 and 8, a lifetime control region 50 is provided in the n-type drift layer 1 of the diode region 20 on the back surface side of the center in the thickness direction of the semiconductor substrate. The lifetime control region 50 has a higher crystal defect density than other parts of the n-type drift layer 1 and contains protons. The other parts are parts of the n-type drift layer 1 that are above the region where the crystal defects V are formed. Details of the lifetime control region 50 will be described later.

[0053] FIG. 9 is a cross-sectional view showing the boundary between the IGBT region 10 and the diode region 20 according to the first embodiment. The lifetime control region 50 is omitted in FIG. 9 . FIG. 9 is a cross-sectional view obtained by cutting FIG. 1 or FIG. 2 along line GG. The p-type collector layer 16 provided in the IGBT region 10 protrudes from the boundary between the IGBT region 10 and the diode region 20 toward the diode region 20 by a distance U1. This increases the distance between the n+ type cathode layer 26 and the active trench gate 11. Therefore, when a gate drive voltage is applied to the gate trench electrode 11a during freewheel diode operation, current flow from a channel formed adjacent to the active trench gate 11 in the IGBT region 10 to the n+ type cathode layer 26 can be suppressed. The distance U1 is, for example, 100 μm. Depending on the application of the semiconductor device 100 or 101, the distance U1 may be zero or less than 100 μm.

[0054] 10 and 11 are cross-sectional views showing the configuration of termination region 30 according to the first embodiment. FIG. 10 is a cross-sectional view obtained by cutting FIG. 1 or FIG. 2 along line E-E. FIG. 11 is a cross-sectional view obtained by cutting FIG. 1 along line F-F. Termination region 30 has an n-type drift layer 1. The top and back surfaces of termination region 30 are flush with the top and back surfaces of IGBT region 10 and diode region 20, respectively. Furthermore, n-type drift layer 1 in termination region 30 has the same configuration as the n-type drift layers 1 in IGBT region 10 and diode region 20. The n-type drift layers 1 in termination region 30, IGBT region 10, and diode region 20 are continuously and integrally formed.

[0055] In the termination region 30, a p-type termination well layer 31 is provided on the upper surface side of the n-type drift layer 1. The p-type termination well layer 31 contains, for example, boron or aluminum as a p-type impurity. The concentration of the p-type impurity in the p-type termination well layer 31 is 1.0×10 14 / cm 3 ~1.0×10 19 / cm 3 The p-type termination well layer 31 surrounds the cell region. The p-type termination well layer 31 is provided in the shape of multiple rings. Furthermore, an n+ type channel stopper layer 32 is provided on the outer edge side of the p-type termination well layer 31. The n+ type channel stopper layer 32 surrounds the p-type termination well layer 31.

[0056] A p-type termination collector layer 16a is provided between the n-type drift layer 1 and the rear surface of the semiconductor substrate. The p-type termination collector layer 16a is formed continuously and integrally with the p-type collector layer 16 provided in the cell region. Therefore, the p-type collector layer 16 may be referred to as the p-type collector layer 16, including the p-type termination collector layer 16a.

[0057] In the semiconductor device 100, the diode region 20 is adjacent to the termination region 30. In this configuration, as shown in FIG. 11, the end of the p-type termination collector layer 16a on the diode region 20 side extends into the diode region 20 by a distance U2. This increases the distance between the n+ type cathode layer 26 and the p-type termination well layer 31. This prevents the p-type termination well layer 31 from functioning as a diode anode. The distance U2 is, for example, 100 μm.

[0058] In the termination region 30, a collector electrode 7 is provided on the back surface of the semiconductor substrate. The collector electrode 7 is formed continuously and integrally from the cell region to the termination region 30. On the other hand, in the termination region 30, an emitter electrode 6 continuing from the cell region and a termination electrode 6a separated from the emitter electrode 6 are provided on the top surface of the semiconductor substrate.

[0059] The emitter electrode 6 and the termination electrode 6a are electrically connected via a semi-insulating film 33. The semi-insulating film 33 is, for example, sinSiN (semi-insulating silicon nitride). The termination electrode 6a, the p-type termination well layer 31, and the n+-type channel stopper layer 32 are electrically connected via contact holes formed in an interlayer insulating film 4 provided on the upper surface of the termination region 30. In addition, a termination protective film 34 is provided in the termination region 30, covering the emitter electrode 6, the termination electrode 6a, and the semi-insulating film 33. The termination protective film 34 is formed of, for example, polyimide.

[0060] Next, a method for manufacturing the semiconductor devices 100 and 101 will be described. Figures 12 to 23 are diagrams showing a method for manufacturing the semiconductor device according to embodiment 1. Figures 11 to 19 show steps for forming the top surface side of the semiconductor device 100 or the semiconductor device 101, and Figures 20 to 23 show steps for forming the back surface side of the semiconductor device 100 or the semiconductor device 101.

[0061] First, a semiconductor substrate having an n-type drift layer 1 is prepared as shown in FIG. 12. The semiconductor substrate may be, for example, a so-called FZ wafer produced by the FZ (Floating Zone) method or a so-called MCZ wafer produced by the MCZ (Magnetic Applied CZochralki) method. The semiconductor substrate may be any n-type wafer containing n-type impurities. The concentration of the n-type impurities contained in the semiconductor substrate is appropriately selected depending on the withstand voltage of the semiconductor device. For example, in a semiconductor device with a withstand voltage of 1200 V, the concentration of the n-type impurities is adjusted so that the resistivity of the n-type drift layer 1 is approximately 40 to 120 Ω·cm.

[0062] In the process of preparing the semiconductor substrate, the entire semiconductor substrate becomes an n-type drift layer 1. P-type or n-type impurity ions are implanted from the top or back side of the semiconductor substrate and diffused into the semiconductor substrate by heat treatment or the like, thereby forming a p-type or n-type semiconductor layer.

[0063] The semiconductor substrate includes regions that will become the IGBT region 10 and the diode region 20. Although not shown, a region that will become the termination region 30 is provided around the regions that will become the IGBT region 10 and the diode region 20. The following mainly describes a manufacturing method for the IGBT region 10 and the diode region 20. The termination region 30 may be fabricated by a well-known manufacturing method. For example, before processing the IGBT region 10 and the diode region 20, p-type impurity ions may be implanted into the termination region 30 to form an FLR as a breakdown voltage retention structure. Alternatively, when p-type impurity ions are implanted into the IGBT region 10 or the diode region 20, p-type impurity ions may be implanted into the termination region 30 at the same time.

[0064] 13, n-type impurities such as phosphorus are implanted from the upper surface side of the semiconductor substrate to form an n-type carrier accumulation layer 2. Furthermore, p-type impurities such as boron are implanted from the upper surface side of the semiconductor substrate to form a p-type base layer 15 and a p-type anode layer 25. The n-type carrier accumulation layer 2, p-type base layer 15, and p-type anode layer 25 are formed by implanting impurity ions into the semiconductor substrate and then diffusing the impurity ions by heat treatment.

[0065] The n-type impurities and p-type impurities are ion-implanted into the upper surface of the semiconductor substrate after masking. Therefore, these layers are selectively formed on the upper surface of the semiconductor substrate. The n-type carrier accumulation layer 2, p-type base layer 15, and p-type anode layer 25 are connected to the p-type termination well layer 31 in the termination region 30. During the masking process, resist is applied to the semiconductor substrate, and openings are formed in predetermined regions of the resist using photolithography. Ion implantation or etching is performed on predetermined regions of the semiconductor substrate through these openings.

[0066] The p-type base layer 15 and the p-type anode layer 25 may be formed simultaneously by ion implantation of p-type impurities. In this case, the p-type base layer 15 and the p-type anode layer 25 will have the same depth and p-type impurity concentration. Alternatively, p-type impurities may be ion implanted separately into the p-type base layer 15 and the p-type anode layer 25 using a mask process. This may result in the p-type base layer 15 and the p-type anode layer 25 having different depths or p-type impurity concentrations.

[0067] The p-type termination well layer 31 may also be formed by ion implantation of p-type impurities simultaneously with the p-type anode layer 25. In this case, the p-type termination well layer 31 and the p-type anode layer 25 have the same depth and p-type impurity concentration. The mask used to form one or both of the p-type termination well layer 31 and the p-type anode layer 25 may also be mesh-shaped. This allows the aperture ratio to be changed. Therefore, even when the p-type termination well layer 31 and the p-type anode layer 25 are formed by ion implantation simultaneously, the p-type impurity concentrations of the p-type termination well layer 31 and the p-type anode layer 25 can be made different.

[0068] Furthermore, ions may be implanted separately into the p-type termination well layer 31 and the p-type anode layer 25 using a mask process. This allows the p-type termination well layer 31 and the p-type anode layer 25 to have different depths or p-type impurity concentrations. The p-type termination well layer 31, p-type base layer 15, and p-type anode layer 25 may also be formed by simultaneous ion implantation.

[0069] Next, n-type impurities are selectively implanted into the upper surface of the p-type base layer 15 using a mask. This forms the n+ type source layer 13 as shown in FIG. 14. The implanted n-type impurities are, for example, arsenic or phosphorus. Furthermore, p-type impurities are selectively implanted into the upper surface of the p-type base layer 15 using a mask. This forms the p+ type contact layer 14. Furthermore, p-type impurities are selectively implanted into the upper surface of the p-type anode layer 25. This forms the p+ type contact layer 24. The implanted p-type impurities are, for example, boron or aluminum.

[0070] Next, as shown in FIG. 15 , trenches 8 are formed from the upper surface side of the semiconductor substrate, penetrating the p-type base layer 15 and the p-type anode layer 25 and reaching the n- type drift layer 1. The sidewalls of trenches 8 that penetrate the n+ type source layer 13 form part of the n+ type source layer 13. To form trenches 8, first, an oxide film such as SiO2 is deposited on the semiconductor substrate. Next, an opening is formed in the oxide film in the portion where trench 8 will be formed by masking. Next, the semiconductor substrate is etched using the oxide film with the opening formed as a mask.

[0071] In FIG. 15, the pitch of the trenches 8 is the same in the IGBT region 10 and the diode region 20. The pitch of the trenches 8 may be different in the IGBT region 10 and the diode region 20. The pitch of the trenches 8 can be changed as appropriate by changing the mask pattern in the mask process.

[0072] 16, the semiconductor substrate is heated in an atmosphere containing oxygen to form an oxide film 9 on the inner wall of the trench 8 and on the upper surface of the semiconductor substrate. The oxide film 9 formed in the trench 8 in the IGBT region 10 is a gate trench insulating film 11b and a dummy trench insulating film 12b. The oxide film 9 formed in the trench 8 in the diode region 20 is a diode trench insulating film 21b. The oxide film 9 formed on the upper surface of the semiconductor substrate is removed in a later process.

[0073] 17, polysilicon doped with n-type or p-type impurities is deposited in the trenches 8 by CVD (chemical vapor deposition) or the like, thereby forming gate trench electrodes 11a, dummy trench electrodes 12a, and diode trench electrodes 21a.

[0074] Next, as shown in FIG. 18, an interlayer insulating film 4 is formed on the gate trench electrode 11a. Next, the oxide film 9 formed on the upper surface of the semiconductor substrate is removed. The interlayer insulating film 4 is made of, for example, SiO2. Next, contact holes are formed in the interlayer insulating film 4 by mask processing. The contact holes are formed on the n+ type source layer 13, the p+ type contact layer 14, the p+ type contact layer 24, the dummy trench electrode 12a, and the diode trench electrode 21a.

[0075] Next, as shown in FIG. 19, a barrier metal 5 is formed on the upper surface of the semiconductor substrate and on the interlayer insulating film 4. Furthermore, an emitter electrode 6 is formed on the barrier metal 5. The barrier metal 5 is made of titanium nitride. VD It is formed by depositing a film using physical vapor deposition (CVD) or CVD.

[0076] The emitter electrode 6 is formed by depositing an aluminum-silicon alloy on the barrier metal 5 by, for example, PVD, such as sputtering or vapor deposition. A nickel alloy may also be formed on the aluminum-silicon alloy by electroless plating or electrolytic plating. The plating process for forming the nickel alloy may be performed after processing the back side of the semiconductor substrate. Plating makes it easy to form a thick metal film as the emitter electrode 6. This increases the heat capacity of the emitter electrode 6, improving its heat resistance.

[0077] 20, the back surface of the semiconductor substrate is ground to thin the semiconductor substrate to a designed thickness. The thickness of the semiconductor substrate after grinding is, for example, 80 μm to 200 μm. The thickness of the semiconductor substrate may be determined depending on the breakdown voltage of the semiconductor device.

[0078] 21 , n-type impurities are implanted from the back surface side of the semiconductor substrate to form an n-type buffer layer 3. Furthermore, p-type impurities are implanted from the back surface side of the semiconductor substrate to form a p-type collector layer 16. The n-type buffer layer 3 may be formed in the IGBT region 10, the diode region 20, and the termination region 30. The n-type buffer layer 3 may also be formed only in the IGBT region 10 or the diode region 20.

[0079] The n-type buffer layer 3 is formed by implanting, for example, phosphorus ions. The n-type buffer layer 3 may also be formed by implanting protons. The n-type buffer layer 3 may also be formed by implanting both protons and phosphorus. Protons can be implanted deep into the rear surface of the semiconductor substrate with low acceleration energy. The proton implantation depth can also be easily changed by changing the acceleration energy. When forming the n-type buffer layer 3 with protons, the protons may be implanted multiple times while changing the acceleration energy. This allows the formation of an n-type buffer layer 3 that is wider in the thickness direction of the semiconductor substrate than when the n-type buffer layer 3 is formed with phosphorus.

[0080] Furthermore, phosphorus can have a higher activation rate as an n-type impurity than protons. By forming the n-type buffer layer 3 with phosphorus, punch-through of the depletion layer can be reliably suppressed even in a thinned semiconductor substrate. To further thin the semiconductor substrate, it is preferable to form the n-type buffer layer 3 by implanting both protons and phosphorus. In this case, protons are implanted deeper from the back surface than phosphorus.

[0081] The p-type collector layer 16 is formed by implanting, for example, boron. The p-type collector layer 16 is also formed in the termination region 30 as a p-type termination collector layer 16a. After ion implantation from the back surface side of the semiconductor substrate, the back surface is irradiated with a laser for laser annealing, thereby activating the implanted boron. This forms the p-type collector layer 16. At the same time, phosphorus for the n-type buffer layer 3, which has been implanted shallowly from the back surface of the semiconductor substrate, is also activated.

[0082] On the other hand, protons are activated at low annealing temperatures of 350 to 500°C. Therefore, after proton implantation, care must be taken to ensure that the entire semiconductor substrate does not exceed a temperature of 350 to 500°C, except during the process of activating the protons. Laser annealing can heat only the area near the back surface of the semiconductor substrate to a high temperature. Therefore, it can be used to activate n-type or p-type impurities even after proton implantation.

[0083] Next, as shown in FIG. 22 , an n+ type cathode layer 26 is formed in the diode region 20. The n+ type cathode layer 26 is formed by implanting, for example, phosphorus. The phosphorus is selectively implanted from the back surface side using a mask process. As a result, the boundary between the p-type collector layer 16 and the n+ type cathode layer 26 is set at a position a distance U1 toward the diode region 20 from the boundary between the IGBT region 10 and the diode region 20. The amount of n-type impurity implanted to form the n+ type cathode layer 26 is greater than the amount of p-type impurity implanted to form the p-type collector layer 16.

[0084] In Figure 22, the p-type collector layer 16 and the n+ type cathode layer 26 have the same depth from the back surface. In reality, the depth of the n+ type cathode layer 26 is greater than or equal to the depth of the p-type collector layer 16. In the region where the n+ type cathode layer 26 is formed, it is necessary to implant n-type impurities into the region where the p-type impurities have been implanted to turn it into an n-type semiconductor. For this reason, the concentration of the implanted n-type impurities is made higher than the concentration of the p-type impurities in all regions where the n+ type cathode layer 26 is formed.

[0085] 21 and 22 omits the step of forming the lifetime control region 50. The method of forming the lifetime control region 50 will be described later.

[0086] Next, as shown in FIG. 23 , a collector electrode 7 is formed on the back surface of the semiconductor substrate. The collector electrode 7 is formed over the entire back surface of the IGBT region 10, the diode region 20, and the termination region 30. Alternatively, the collector electrode 7 may be formed over the entire back surface of an n-type wafer, which is the semiconductor substrate. The collector electrode 7 is formed by depositing an aluminum-silicon alloy, titanium, or the like by physical vapor deposition (PVD), such as sputtering or vapor deposition. The collector electrode 7 may also be formed by stacking multiple metals, such as an aluminum-silicon alloy, titanium, nickel, or gold. Alternatively, the collector electrode 7 may be formed by stacking a metal film by electroless plating or electrolytic plating on a metal film formed by PVD.

[0087] The semiconductor device 100 or the semiconductor device 101 is manufactured by the above-described process. A plurality of semiconductor devices 100 or 101 are manufactured in a matrix on a single n-type wafer. The wafer is cut into individual semiconductor devices by laser dicing or blade dicing, thereby completing the semiconductor device 100 or the semiconductor device 101.

[0088] Next, the lifetime control region 50 according to this embodiment will be described. Fig. 24 is a diagram illustrating the lifetime control region 50 according to the first embodiment. The lifetime control region 50 is provided on the back surface side of the center M1 in the thickness direction of the semiconductor substrate in the diode region 20. The density of crystal defects V per unit volume in the lifetime control region 50 is higher than in parts of the n-type drift layer 1 other than the lifetime control region 50. The crystal defects V are also called carrier traps.

[0089] Figure 24 shows the proton density d1 and defect density d2 versus depth in the diode region. The n-type drift layer 1 has protons, i.e., hydrogen ions, in a region 51 in the depth direction. Crystal defects V are formed by implanting protons from the backside of the semiconductor substrate. Region 51 corresponds to the region where the protons stopped when they were implanted. On the other hand, the proton density d1 in the region where the protons passed is almost zero. Furthermore, as shown by defect density d2, crystal defects V are formed in both the region 51 where the protons stopped and the region where they passed.

[0090] FIG. 24 also shows the carrier density versus depth in the diode region 20. C0 indicates the carrier density when there is no lifetime control region 50. C1 indicates the carrier density when there is a lifetime control region 50. The lifetime control region 50 reduces the carriers accumulated in the region from the back surface of the semiconductor substrate to the center M1 in the thickness direction of the n-type drift layer 1 during forward operation of the diode. This makes it easier for the depletion layer to extend during recovery operation in diodes built into RC-IGBTs with high current density and carrier density. Therefore, the tail current during recovery operation can be effectively reduced, and the recovery loss Err can be reduced.

[0091] As described above, proton implantation forms crystal defects V in the semiconductor substrate. When the crystal defects V are activated by heat treatment, that is, when they become donors, they combine with oxygen O and hydrogen H to form VOH complex defects. The VOH complex defects function as n-type. Therefore, the region into which protons are implanted by heat treatment functions as an n-type semiconductor layer.

[0092] That is, if the crystal defects V are left without being converted into donors, the crystal defects V fulfill the function of lifetime control. If the crystal defects V are converted into donors, the crystal defects V lose their function of lifetime control. The crystal defects V that have become donors function as an n-type layer, and can therefore function as an n-type buffer layer 3. The n-type buffer layer 3 is provided on the back surface side of the n- type drift layer 1, at a position deeper than the n+ type cathode layer 26. The n-type buffer layer 3 suppresses the extension of a depletion layer from the PN junction between the p-type anode layer 25 and the n- type drift layer 1 toward the n+ type cathode layer 26.

[0093] The maximum donor concentration in n-type drift layer 1 is 1.0×10 12 / cm 3 ~1.0×10 15 / cm 3 The maximum donor concentration in the lifetime control region 50 is 1.0×10 15 / cm 3 The maximum donor concentration of the n-type buffer layer 3 is 1.0×10 14 / cm 3 ~1.0×10 18 / cm 3 These concentrations are those after activation by heat treatment.

[0094] 25 is a diagram illustrating the donor concentration according to the first embodiment. The horizontal axis of FIG. 25 represents the depth from the rear surface of the semiconductor substrate. The maximum value of the donor concentration in the lifetime control region 50 is 1.0×10 15 / cm 3or less. Furthermore, the maximum donor concentration in the lifetime control region 50 is preferably 10 times or less the donor concentration in the portion of the n-type drift layer 1 other than the lifetime control region 50. Here, the portion of the n-type drift layer 1 other than the lifetime control region 50 refers to the portion of the n-type drift layer 1 above the region in which the crystal defects V are formed. Under these conditions, the donor concentration in the lifetime control region 50 is sufficiently low, and lifetime control can be performed sufficiently. In other words, in this embodiment, the function of the lifetime control region 50 can be fully exhibited by suppressing the conversion of protons to donors and leaving the crystal defects V.

[0095] Furthermore, the donor concentration of the n-type buffer layer 3 is preferably 50 times or more the maximum donor concentration of the lifetime control region 50. In this case, the donor concentration of the n-type buffer layer 3 is sufficiently high, and the extension of the depletion layer can be sufficiently suppressed. In other words, the n-type buffer layer 3 can function as a field stop layer. In this case, the lifetime control region 50 of the n-type drift layer 1 does not function as a field stop layer. The concentration of each layer can be freely changed within the above concentration range.

[0096] Next, a method for forming the lifetime control region 50 and the n-type buffer layer 3 will be described. As described above, the method for manufacturing the semiconductor device 100 or 101 first performs a step of forming the upper surface of the semiconductor substrate. Here, a p-type base layer 15 is formed on the upper surface side of the IGBT region 10 of the n-type semiconductor substrate, an n+-type source layer 13 is formed on the upper surface side of the p-type base layer 15, and a p-type anode layer 25 is formed on the upper surface side of the diode region 20 of the semiconductor substrate. These layers are formed by injecting donor impurities or acceptor impurities from the upper surface side of the semiconductor substrate and heating.

[0097] Next, a formation process for the back side of the semiconductor substrate is performed. First, protons are implanted from the back side of the diode region 20 with a first acceleration energy. Next, protons are implanted from the back side of the diode region 20 with a second acceleration energy that is smaller than the first acceleration energy. Next, the region into which protons are implanted with the first acceleration energy is heated at a temperature less than 350°C to form the lifetime control region 50. This heating is called the first heating. Next, the region into which protons are implanted with the second acceleration energy is heated at a temperature equal to or higher than 350°C to form the n-type buffer layer 3. This heating is called the second heating. The n-type buffer layer 3 is formed between the n+ type cathode layer 26 and the lifetime control region 50 in the thickness direction of the semiconductor substrate.

[0098] It is preferable to use an electric furnace for the first heating. The lifetime control region 50 is heated in the electric furnace at a temperature of less than 350°C. Protons are activated by heating at a temperature of 350°C to 500°C. By heating at a low temperature where protons are not activated, it is possible to suppress changes in electrical characteristics due to self-heating when current is applied.

[0099] Laser annealing is preferably used for the second heating. In order to suppress the extension of the depletion layer in the n-type buffer layer 3, the implanted protons are activated. At this time, only the surface layer on the back surface of the semiconductor substrate is locally heated to prevent heat from being conducted to the protons implanted in the lifetime control region 50. Laser annealing enables localized heating. The irradiation time and temperature of the laser annealing are adjusted according to the depth to which the protons are implanted in the n-type buffer layer 3. This makes it possible to activate the protons in the n-type buffer layer 3 without activating the protons in the lifetime control region 50.

[0100] The order of the first heating and the second heating may be freely changed. In addition, the order of the proton implantation into the lifetime control region 50 and the n-type buffer layer 3 may also be freely changed. Furthermore, the proton implantation into the lifetime control region 50 and the n-type buffer layer 3 does not need to be performed consecutively. The second heating may be performed after the proton implantation into the n-type buffer layer 3, and then the protons may be implanted into the lifetime control region 50 and the first heating may be performed. Furthermore, the first heating step may be omitted if necessary.

[0101] In the proton implantation step, protons may also be implanted into the IGBT region 10. This allows the lifetime control region 50 and the n-type buffer layer 3 to be formed in the IGBT region 10 as well. Alternatively, only the n-type buffer layer 3 may be formed in the IGBT region 10 without forming the lifetime control region 50.

[0102] Next, a p-type collector layer 16 is formed on the back surface of the IGBT region 10, and an n+ type cathode layer 26 is formed on the back surface of the n-type buffer layer 3 in the diode region 20. The p-type collector layer 16 is formed by implanting acceptor impurities and heating. The n+ type cathode layer 26 is formed by implanting donor impurities and heating. The order of implanting and heating the p-type collector layer 16, n+ type cathode layer 26, n-type buffer layer 3, and lifetime control region 50 can be freely changed.

[0103] For manufacturing reasons, it is desirable to form the n-type buffer layer 3 by implanting protons, as with the lifetime control region 50. However, as described above, it is also possible to implant donors from the back surface side of the diode region 20 shallower than the lifetime control region 50, and then heat the region into which the donors are implanted to form the n-type buffer layer 3 on the back surface side of the lifetime control region 50. The donor impurity for forming the n-type buffer layer 3 is, for example, phosphorus.

[0104] As a first modification of this embodiment, the distance in the thickness direction of the semiconductor substrate between the peak position of the crystal defect density in the lifetime control region 50 and the center M1 of the semiconductor substrate in the thickness direction may be smaller than the distance between the peak position of the crystal defect density and the back surface of the semiconductor substrate. By designing the peak position of the crystal defect density in the lifetime control region 50 to be close to the center M1 of the semiconductor substrate in the thickness direction, crystal defects V can be formed over a wide range. Therefore, the recovery loss Err can be further reduced.

[0105] The peak position of the crystal defect density can be adjusted by changing the proton injection position. The proton injection position can be adjusted by changing the acceleration voltage during proton injection. For example, the higher the acceleration voltage, the deeper the protons can be injected from the backside.

[0106] As a second modification of this embodiment, the thickness of the semiconductor substrate may be 180 μm or less. FIG. 26 is a diagram illustrating the range of protons in silicon. FIG. 26 shows calculated values ​​of the range of protons in silicon versus the acceleration energy of the protons. When protons are implanted into silicon with an acceleration energy of 2000 keV using a typical implantation device, the distance from the back surface of the semiconductor substrate to the peak position of the protons is approximately 45 μm at most. In this case, if the thickness of the semiconductor substrate is 180 μm or less, an effective lifetime control region 50 can be formed. The thickness of the semiconductor substrate can be adjusted by changing the amount of cutting of the back surface.

[0107] As a third modification of this embodiment, the semiconductor substrate may be formed of a wide bandgap semiconductor. The wide bandgap semiconductor may be, for example, silicon carbide, a gallium nitride-based material, or diamond. According to this embodiment, the semiconductor substrate is formed of a wide bandgap semiconductor, and the tail current during recovery operation can be effectively reduced even when operating at high temperatures.

[0108] These modifications can be applied as appropriate to the semiconductor devices and semiconductor device manufacturing methods according to the following embodiments. Note that the semiconductor devices and semiconductor device manufacturing methods according to the following embodiments have many points in common with the first embodiment, so the following description will focus on the differences from the first embodiment.

[0109] Embodiment 2 FIG. 27 is a cross-sectional view of a diode region according to the second embodiment. In this embodiment, the p-type anode layer 25 has a lower acceptor concentration than the p-type base layer 15. The other configurations are the same as those of the first embodiment. FIG. 28 is a diagram illustrating carrier density according to the second embodiment. FIG. 28 shows carrier density versus position in the depth direction of the diode region 20a. Compared to carrier density C2 when the p-type anode layer 25 has a high concentration, carrier density C3 when the p-type anode layer 25 has a low concentration is lower on the upper surface side.

[0110] In this embodiment, the amount of holes injected into the diode region 20a during diode operation can be reduced. Therefore, the carrier density on the upper surface side of the diode region 20a is lower than in the first embodiment. Therefore, the recovery loss Err can be further reduced. Note that, as shown in FIG. 27, the n-type carrier accumulation layer 2 does not necessarily have to be provided.

[0111] By making the acceptor concentration implanted into the p-type base layer 15 lower than the acceptor concentration implanted into the p-type anode layer 25, the acceptor concentration of the p-type anode layer 25 after activation can be made lower than that of the p-type base layer 15. Both the p-type base layer 15 and the p-type anode layer 25 are far from the upper surface of the semiconductor substrate. For this reason, activation by heating in an electric furnace is preferred.

[0112] Embodiment 3 FIG. 29 is a cross-sectional view showing the configuration of the boundary between the IGBT region 10 and the diode region 20 according to the third embodiment. In this embodiment, a lifetime control region 50 is provided in the IGBT region 10 on the back side of the center M1 in the thickness direction of the semiconductor substrate. In the IGBT region 10, the lifetime control region 50 also has a higher crystal defect density than the portion of the n-type drift layer 1 other than the lifetime control region 50, and contains protons. The other configurations are the same as those in the first embodiment. Note that, as shown in FIG. 29, the n-type carrier accumulation layer 2 is provided in the IGBT region 10, and does not necessarily have to be provided in the diode region 20.

[0113] In this embodiment, it is possible to reduce the residual carriers that are discharged when the depletion layer in the IGBT region 10 expands when the semiconductor device is turned off, and therefore the turn-off loss Eoff can also be reduced.

[0114] The technical features described in each embodiment may be used in appropriate combination. [Explanation of symbols]

[0115] 1 n-type drift layer, 2 n-type carrier accumulation layer, 3 n-type buffer layer, 4 interlayer insulating film, 5 barrier metal, 6 emitter electrode, 6a termination electrode, 7 collector electrode, 8 trench, 9 oxide film, 10 IGBT region, 11 active trench gate, 11a gate trench electrode, 11b gate trench insulating film, 12 dummy trench gate, 12a dummy trench electrode, 12b dummy trench insulating film, 13 n+ type source layer, 14 p+ type contact layer, 15 p-type base layer, 16 p-type collector layer, 16a p-type termination collector layer, 20 diode region, 20a diode region, 21 diode trench gate, 21a diode trench electrode, 21b diode trench insulating film, 24 p+ type contact layer, 25 p-type anode layer, 26 n+ type cathode layer, 30 termination region, 31 p-type termination well layer, 32 n+ type channel stopper layer, 33 semi-insulating film, 34 termination protection film, 40 pad region, 41 control pad, 41a current sense pad, 41b Kelvin emitter pad, 41c gate pad, 41d temperature sense diode pad, 50 lifetime control region, 51 region, 100 semiconductor device, 101 semiconductor device, V crystal defect

Claims

1. a semiconductor substrate having an IGBT region and a diode region; a first electrode provided on an upper surface of the semiconductor substrate; a second electrode provided on a back surface opposite to the top surface of the semiconductor substrate; Equipped with The diode region is an n-type drift layer; a p-type anode layer provided on an upper surface side of the drift layer; an n-type cathode layer provided on the back surface side of the drift layer; and a first lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on a back surface side of the center of the semiconductor substrate in a thickness direction of the drift layer; the maximum value of the donor concentration in the first lifetime control region is 1.0×10 / cm or less, a position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on a rear surface side of the drift layer at a position deeper from the rear surface than the cathode layer; a donor concentration in the buffer layer is 50 times or more the maximum value of the donor concentration in the first lifetime control region, the buffer layer is formed of phosphorus; A semiconductor device characterized in that, in the thickness direction of the semiconductor substrate, the distance between the peak position of the crystal defect density of the first lifetime control region and the center of the thickness direction of the semiconductor substrate is smaller than the distance between the peak position and the back surface of the semiconductor substrate.

2. a semiconductor substrate having an IGBT region and a diode region; a first electrode provided on an upper surface of the semiconductor substrate; a second electrode provided on a back surface opposite to the top surface of the semiconductor substrate; Equipped with The diode region is an n-type drift layer; a p-type anode layer provided on an upper surface side of the drift layer; an n-type cathode layer provided on the back surface side of the drift layer; and a first lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on a back surface side of the center of the semiconductor substrate in a thickness direction of the drift layer; a maximum value of the donor concentration in the first lifetime control region is 10 times or less the donor concentration in the other portion of the drift layer, a position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on a rear surface side of the drift layer at a position deeper from the rear surface than the cathode layer; a donor concentration in the buffer layer is 50 times or more the maximum value of the donor concentration in the first lifetime control region, The semiconductor device is characterized in that the buffer layer is formed of phosphorus.

3. 3. The semiconductor device according to claim 2, wherein the distance between the peak position of the crystal defect density of the first lifetime control region and the center of the semiconductor substrate in the thickness direction of the semiconductor substrate is smaller than the distance between the peak position and the back surface of the semiconductor substrate.

4. a semiconductor substrate having an IGBT region and a diode region; a first electrode provided on an upper surface of the semiconductor substrate; a second electrode provided on a back surface opposite to the top surface of the semiconductor substrate; Equipped with The diode region is an n-type drift layer; a p-type anode layer provided on an upper surface side of the drift layer; an n-type cathode layer provided on the back surface side of the drift layer; and a first lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on a back surface side of the center of the semiconductor substrate in a thickness direction of the drift layer; the maximum value of the donor concentration in the first lifetime control region is 1.0×10 / cm or less, a position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on a rear surface side of the drift layer at a position deeper from the rear surface than the cathode layer; a donor concentration in the buffer layer is 50 times or more the maximum value of the donor concentration in the first lifetime control region, the buffer layer is formed of phosphorus; The semiconductor device is characterized in that the thickness of the semiconductor substrate is 180 μm or less.

5. a semiconductor substrate having an IGBT region and a diode region; a first electrode provided on an upper surface of the semiconductor substrate; a second electrode provided on a back surface opposite to the top surface of the semiconductor substrate; Equipped with The diode region is an n-type drift layer; a p-type anode layer provided on an upper surface side of the drift layer; an n-type cathode layer provided on the back surface side of the drift layer; and a first lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on a back surface side of the center of the semiconductor substrate in a thickness direction of the drift layer; the maximum value of the donor concentration in the first lifetime control region is 1.0×10 / cm or less, a position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on a rear surface side of the drift layer at a position deeper from the rear surface than the cathode layer; a donor concentration in the buffer layer is 50 times or more the maximum value of the donor concentration in the first lifetime control region, the buffer layer is formed of phosphorus; the IGBT region has a p-type base layer on the upper surface side of the semiconductor substrate, The semiconductor device is characterized in that the anode layer has a lower acceptor concentration than the base layer.

6. a semiconductor substrate having an IGBT region and a diode region; a first electrode provided on an upper surface of the semiconductor substrate; a second electrode provided on a back surface opposite to the top surface of the semiconductor substrate; Equipped with The diode region is an n-type drift layer; a p-type anode layer provided on an upper surface side of the drift layer; an n-type cathode layer provided on the back surface side of the drift layer; and a first lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on a back surface side of the center of the semiconductor substrate in a thickness direction of the drift layer; the maximum value of the donor concentration in the first lifetime control region is 1.0×10 / cm or less, a position where the donor concentration of the first lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, an n-type buffer layer is provided on a rear surface side of the drift layer at a position deeper from the rear surface than the cathode layer; a donor concentration in the buffer layer is 50 times or more the maximum value of the donor concentration in the first lifetime control region, the buffer layer is formed of phosphorus; a second lifetime control region having a higher crystal defect density than other portions of the drift layer and containing protons is provided on the back side of the IGBT region relative to the center in the thickness direction of the semiconductor substrate.

7. 7. The semiconductor device according to claim 1, wherein the semiconductor substrate is made of a wide bandgap semiconductor.

8. 8. The semiconductor device according to claim 7, wherein the wide band gap semiconductor is silicon carbide, a gallium nitride-based material, or diamond.

9. forming a p-type base layer provided on an upper surface side of an IGBT region of an n-type semiconductor substrate, an n-type source layer provided on an upper surface side of the base layer, and a p-type anode layer provided on an upper surface side of a diode region of the semiconductor substrate; Injecting protons into the diode region from a back surface side opposite to the top surface at a first acceleration energy; heating the region into which protons have been implanted at the first acceleration energy at a temperature less than 350°C to form a lifetime control region; Phosphorus is implanted from the back surface side of the diode region to a depth shallower than the lifetime control region; heating the phosphorus-implanted region to form an n-type buffer layer on the back surface side of the lifetime control region; forming a p-type collector layer provided on a rear surface side of the IGBT region and an n-type cathode layer provided on a rear surface side of the buffer layer in the diode region; a position where the donor concentration in the lifetime control region is maximum is on the back surface side of the center in the thickness direction of the semiconductor substrate, a donor concentration in the buffer layer is 50 times or more the maximum donor concentration in the lifetime control region, the diode region includes an n-type drift layer, the anode layer provided on an upper surface side of the drift layer, and the cathode layer provided on a back surface side of the drift layer; 2. A method for manufacturing a semiconductor device, wherein the maximum value of the donor concentration in the lifetime control region is 10 times or less the donor concentration in other portions of the drift layer.

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