Substrate processing apparatus and substrate processing method

Abstract

To suppress the gas supply in the vicinity of a substrate.SOLUTION: A substrate processing apparatus includes a substrate holding unit, a processing cup surrounding the substrate holding unit, a gas supply unit that supplies gas, and an exhaust unit that exhausts the gas supplied to the processing cup, and further includes a switching unit that can switch the gas flow path between a first flow path and a second flow path when a gas flow path from the gas supply unit to the exhaust unit through the inner region surrounded by the processing cup and the substrate is defined as the first flow path, and a gas flow path from the gas supply unit to the exhaust unit through the area outside the processing cup without passing through the substrate is defined as the second flow path.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The technology disclosed herein relates to substrate processing. [Background technology]

[0002] Conventionally, in the manufacturing process of a substrate, various processes are performed on the substrate using a substrate processing apparatus. For example, a technique has been disclosed in which irradiation using atmospheric pressure plasma or a processing liquid containing active species in a liquid plasma is used to improve the wettability of the substrate or remove organic matter (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-273865 Summary of the Invention [Problem to be solved by the invention]

[0004] A gas is supplied into a chamber in which a substrate is processed to circulate the atmosphere within the chamber. However, in substrate processing that is performed by stabilizing the atmosphere near the substrate, such as the above-mentioned plasma processing, the gas supplied into the chamber for circulation may promote the outflow of the atmosphere near the substrate, thereby reducing the effectiveness of the substrate processing.

[0005] The technology disclosed in the present specification has been made in consideration of the problems described above, and is a technology for suppressing the supply of gas near the substrate. [Means for solving the problem]

[0006] A substrate processing apparatus according to a first aspect of the technology disclosed in the present specification includes a substrate holding unit that holds a substrate, a processing cup that surrounds the substrate holding unit, a gas supply unit that supplies a gas toward the processing cup, and an exhaust unit that exhausts the gas supplied to the processing cup. a plasma processing unit for performing plasma processing on the substrate; a path for supplying a carrier gas to the plasma processing unit; and a control unit. a first flow path of the gas from the gas supply unit through an inner region surrounded by the processing cup and the substrate to the exhaust unit, and a second flow path of the gas from the gas supply unit through an outer region of the processing cup to the exhaust unit without passing through the substrate, and a switching unit capable of switching the gas flow path between the first flow path and the second flow path. The processing cup has an opening provided in a sidewall of the processing cup, the switching unit is an openable and closable shutter member provided in the sidewall of the processing cup, the shutter member is positioned to open the opening and causes the gas flow path to become the second flow path, and the control unit switches the gas flow path to the second flow path when the plasma processing unit performs the plasma processing on the substrate, and supplies the carrier gas from the path to the plasma processing unit when the plasma processing unit performs the plasma processing on the substrate. do.

[0007] The substrate processing apparatus according to the second aspect of the technology disclosed in the present specification is related to the substrate processing apparatus according to the first aspect. ,before The switching unit switches the gas flow path to the second flow path when the plasma processing unit approaches the substrate holding unit.

[0009] The first technology disclosed in the present specification 3 The substrate processing apparatus according to the embodiment is a first or 2 In the substrate processing apparatus of the aspect 1, the exhaust unit exhausts the gas from an area inside the processing cup.

[0010] The first technology disclosed in the present specification 4 The substrate processing apparatus according to the embodiment includes first to 3 In the substrate processing apparatus according to any one of the above aspects, the amount of gas supplied by the gas supply unit and the amount of gas exhausted by the exhaust unit are constant before and after switching between the first flow path and the second flow path by the switching unit.

[0011] The first technology disclosed in the present specification 5 The substrate processing apparatus according to the embodiment includes: 4In the substrate processing apparatus according to any one of the above aspects, the gas supply unit has a generally flat structure and is arranged above the substrate holding unit, and a plurality of supply ports for supplying the gas are formed on the lower surface of the gas supply unit.

[0012] The first technology disclosed in the present specification 6 The substrate processing method according to the aspect of the present invention is a substrate processing method using a substrate processing apparatus including a substrate holding unit that holds a substrate and a processing cup that surrounds the substrate holding unit, the method including the steps of: supplying a gas toward the processing cup; and exhausting the gas supplied to the processing cup. performing a plasma treatment on the substrate in a plasma treatment unit; and supplying a carrier gas to the plasma treatment unit when the plasma treatment unit performs the plasma treatment on the substrate, a flow path through which the supplied gas passes through an inner region surrounded by the processing cup and the substrate and is exhausted as a first flow path, and a flow path through which the supplied gas passes through an outer region of the processing cup and is exhausted without passing through the substrate as a second flow path, and the gas flow path is switched between the first flow path and the second flow path. The processing cup has an opening provided in a sidewall of the processing cup, and the step of switching the gas flow path between the first flow path and the second flow path includes a step of placing an openable / closable shutter member provided in the sidewall of the processing cup at a position that opens the opening, and switching the gas flow path to the second flow path during the plasma processing. do. [Effects of the Invention]

[0014] At least one of the techniques disclosed in the present specification 1 of According to this aspect, the supply of gas near the substrate can be suppressed by switching the gas flow path at a specific timing while continuing the gas circulation, thereby forming an atmosphere effective for the substrate processing near the substrate according to the content of the substrate processing.

[0015] Furthermore, objects, features, aspects, and advantages associated with the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a plan view schematically illustrating an example of the configuration of a substrate processing system according to an embodiment. [Figure 2] 2 is a diagram conceptually illustrating an example of the configuration of a control unit illustrated in FIG. 1. FIG. [Figure 3]FIG. 2 is a side view schematically illustrating an example of the configuration of a processing unit according to an embodiment. [Figure 4] FIG. 4 is a diagram illustrating in detail a portion of the configuration shown in FIG. 3. [Figure 5] 10 is a flowchart illustrating an example of an operation of the substrate processing apparatus. [Figure 6] 5A to 5C are diagrams for explaining the operation of the substrate processing apparatus according to the embodiment. [Figure 7] 5A to 5C are diagrams for explaining the operation of the substrate processing apparatus according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features will be shown for the purpose of explaining the technology, but these are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0018] The drawings are schematic, and for the sake of convenience, components may be omitted or simplified as appropriate. Furthermore, the relative sizes and positions of components shown in different drawings are not necessarily accurately depicted and may be changed as appropriate. Hatching may also be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the embodiments.

[0019] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

[0020] Furthermore, in the description given in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0021] Furthermore, in the descriptions provided in this specification, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0022] Furthermore, in the description given in this specification, expressions such as "positive direction of the ... axis" or "negative direction of the ... axis" refer to the direction along the arrow of the ... axis shown in the figure as the positive direction, and the direction opposite to the arrow of the ... axis shown in the figure as the negative direction.

[0023] Furthermore, in the descriptions in this specification, expressions indicating an equal state, such as "identical," "equal," "uniform," or "homogeneous," unless otherwise specified, include cases indicating an exact equal state, as well as cases where there is a difference within a tolerance or within a range where the same level of functionality is obtained.

[0024] Furthermore, in the descriptions provided in this specification, terms that indicate specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions when actually implemented.

[0025] Furthermore, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is used, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. In other words, for example, when it is written as "Part B provided on the upper surface of Part A," it does not preclude the presence of another component "Part C" between Part A and Part B.

[0026] <Embodiment> The substrate processing apparatus and the substrate processing method according to this embodiment will be described below.

[0027] <Configuration of the substrate processing system> 1 is a plan view schematically illustrating an example of the configuration of a substrate processing system 1 according to this embodiment. The substrate processing system 1 includes a load port 400, an indexer robot 402, a center robot 406, a control unit 90, and at least one processing unit 100 (four processing units in FIG. 1).

[0028] Each processing unit 100 is for processing a substrate W (wafer), and at least one of them corresponds to a substrate processing apparatus. The substrate processing apparatus is a single-wafer processing apparatus that can be used for substrate processing, and specifically, is an apparatus that performs processing such as removing organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used resist film. The resist film is, for example, one that has been used as an implantation mask for an ion implantation process.

[0029] Here, substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (i.e., FEDs), and substrates for solar cells.

[0030] The processing unit 100 may include a chamber 80. In this case, the atmosphere in the chamber 80 may be controlled by a control unit 90, allowing the processing unit 100 to perform processing in a desired atmosphere.

[0031] The control unit 90 can control the operation of each component in the substrate processing system 1 (such as the spin motor 10D of the spin chuck 10, the processing liquid supply source 29, the valve 25, the AC power supply 40, the nozzle moving mechanism 220, the plasma moving mechanism 230, or the shutter moving mechanism 240, which will be described later). The carrier C is a container that accommodates substrates W. The load port 400 is a container holding mechanism that holds multiple carriers C. The indexer robot 402 can transport substrates W between the load port 400 and the substrate platform 404. The center robot 406 can transport substrates W between the substrate platform 404 and the processing unit 100.

[0032] The indexer robot 402 , the substrate placement part 404 , and the center robot 406 transport the substrates W between the respective processing units 100 and the load port 400 .

[0033] The unprocessed substrate W is taken out of the carrier C by the indexer robot 402. Then, the unprocessed substrate W is transferred to the center robot 406 via the substrate placement part 404.

[0034] The center robot 406 carries the unprocessed substrate W into the processing unit 100. Then, the processing unit 100 processes the substrate W.

[0035] The substrate W that has been processed in the processing unit 100 is removed from the processing unit 100 by the center robot 406. Then, the processed substrate W passes through other processing units 100 as necessary, and is then transferred to the indexer robot 402 via the substrate placement part 404. The indexer robot 402 loads the processed substrate W into the carrier C. In this manner, the processing of the substrate W is completed.

[0036] Fig. 2 is a diagram conceptually illustrating an example of the configuration of the control unit 90 shown in Fig. 1. The control unit 90 may be configured by a general computer having electric circuits. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read-only memory (ROM) 92, a random access memory (RAM) 93, a storage device 94, an input unit 96, a display unit 97, and a communication unit 98, as well as a bus line 95 interconnecting these units.

[0037] The ROM 92 stores a basic program. The RAM 93 is used as a work area when the CPU 91 performs predetermined processing. The storage device 94 is composed of a non-volatile storage device such as a flash memory or a hard disk drive. The input unit 96 is composed of various switches or a touch panel, and receives input setting instructions such as processing recipes from an operator. The display unit 97 is composed of, for example, a liquid crystal display device and lamps, and displays various information under the control of the CPU 91. The communication unit 98 has a data communication function via a local area network (LAN), etc.

[0038] The storage device 94 has preset therein a plurality of modes for controlling each component in the substrate processing system 1 of FIG. 1. When the CPU 91 executes the processing program 94P, one of the above-described modes is selected, and each component is controlled in that mode. The processing program 94P may be stored in a recording medium. By using this recording medium, the processing program 94P can be installed in the control unit 90. Furthermore, some or all of the functions executed by the control unit 90 do not necessarily have to be realized by software, but may be realized by hardware such as a dedicated logic circuit.

[0039] FIG. 3 is a side view schematically showing an example of the configuration of the processing unit 100 according to this embodiment.

[0040] 3 may be surrounded by the chamber 80 in FIG. 1. The pressure inside the chamber 80 may be approximately atmospheric pressure (for example, 0.5 atmospheres or more and 2 atmospheres or less). In other words, the plasma processing described below may be atmospheric pressure plasma processing performed at atmospheric pressure.

[0041] The processing unit 100 includes a spin chuck 10 that holds one substrate W in a substantially horizontal position and rotates the substrate W around a vertical rotation axis Z1 that passes through the center of the substrate W, a processing liquid nozzle 20 that discharges a processing liquid onto the substrate W, a nozzle movement mechanism 220 that moves the processing liquid nozzle 20, a processing liquid supply source 29 that supplies the processing liquid to the processing liquid nozzle 20, a valve 25 that switches between supplying and stopping the supply of the processing liquid from the processing liquid supply source 29 to the processing liquid nozzle 20, and a plasma processing section 30 that is disposed above the substrate W so as to cover the entire substrate W and serves as an atmospheric pressure plasma source that generates plasma under atmospheric pressure. The apparatus includes an AC power supply 40 that applies an AC voltage to the plasma processing unit 30, a support 60 made of resin (e.g., polytetrafluoroethylene (PTFE)) or the like and supporting the plasma processing unit 30, a plasma movement mechanism 230 that moves the plasma processing unit 30 and the support 60, a cylindrical processing cup 12 that surrounds the spin chuck 10 around the rotation axis Z1 of the substrate W, a shutter member 14 attached to the side wall of the processing cup 12, a shutter movement mechanism 240 that moves the shutter member 14, and an exhaust duct 50 that exhausts gas from the inner area surrounded by the processing cup 12.

[0042] Here, various liquids can be used as the processing liquid depending on the purpose of substrate processing in the processing unit 100. For example, as an etching liquid, hydrochloric acid, sulfuric acid, hydrofluoric acid, phosphoric acid, nitric acid, , sulfurThe cleaning solution can be a mixture of ammonia and hydrogen peroxide (SC1) or a mixture of hydrochloric acid and hydrogen peroxide (SC2). The cleaning solution and rinse solution can be deionized water (DIW).

[0043] In this embodiment, a process for removing a resist film formed on the upper surface of a substrate W will be mainly described. In this case, the processing liquid is sulfuric acid, sulfate, peroxosulfuric acid, and peroxosulfuric acid. salt or hydrogen peroxide water Examples of such liquids include:

[0044] When multiple types of processing liquids are expected, multiple processing liquid nozzles 20 may be provided corresponding to the respective processing liquids. The processing liquid nozzles 20 supply the processing liquid to the substrate W so that a liquid film of the processing liquid is formed on the upper surface of the substrate W.

[0045] The nozzle moving mechanism 220, for example, uses an arm mechanism to move the processing liquid nozzle 20. Specifically, the processing liquid nozzle 20 is attached to an arm member whose angle can be adjusted by an actuator or the like, so that the processing liquid nozzle 20 can swing, for example, in the radial direction of the substrate W.

[0046] The spin chuck 10 includes a disk-shaped spin base 10A facing the underside of the substrate W in a substantially horizontal position, a plurality of chuck pins 10E that clamp the substrate W from the outer periphery of the spin base 10A, a rotation shaft 10C extending downward from the center of the spin base 10A, and a spin motor 10D that rotates the rotation shaft 10C to rotate the substrate W held on the spin base 10A. The plurality of chuck pins 10E are arranged at equal intervals along the circumference of the circular substrate W. Note that a suction-type chuck that vacuum-sucks the underside of the substrate W may be used instead of the spin chuck 10.

[0047] The support part 60 is provided to cover the entire substrate W held by the spin chuck 10, and also functions as a shielding plate that shields the atmosphere above the upper surface of the substrate W from the outside. A path 60A is formed inside the support part 60, and gas supplied from a gas supply source (not shown) can flow through the path 60A to supply the gas to the plasma processing part 30. Note that the shape of the support part 60 and the path 60A shown in Fig. 3 are not limited to those shown in Fig. 3; for example, the support part 60 may be provided only in an area that overlaps a portion of the substrate W in a plan view, or the path 60A may not be formed.

[0048] The shutter member 14 can open and close an opening (not shown here) formed in the side wall of the processing cup 12 by moving along the side wall of the processing cup 12 (for example, by moving in the Z-axis direction in Figure 3).

[0049] The shutter movement mechanism 240 for moving the shutter member 14 is realized by, for example, a motor mechanism or a cylinder mechanism.

[0050] Exhaust duct 50 is provided to penetrate the side wall of processing cup 12 and the side wall of chamber 80. Exhaust duct 50 uses a vacuum pump (not shown) or the like to exhaust gas in an inner region surrounded by processing cup 12 in plan view to the outside of chamber 80.

[0051] The plasma moving mechanism 230 is a linear motion mechanism having an actuator, and moves the support part 60 and the plasma processing part 30 in, for example, the Z-axis direction in FIG.

[0052] In FIG. 3, the processing liquid nozzle 20 and the plasma processing unit 30 are provided separately, but the processing liquid nozzle 20 may be provided integrally with the plasma processing unit 30, and both may be supported by a support unit 60.

[0053] Fig. 4 is a diagram illustrating in detail a portion of the configuration shown in Fig. 3. As illustrated in Fig. 4, the plasma processing unit 30 includes a plate-shaped dielectric member 30A made of quartz or the like, a plurality of electrode rods 30B arranged in a comb shape on the upper surface of the dielectric member 30A, a plurality of electrode rods 30C arranged in a comb shape on the lower surface of the dielectric member 30A, a holder 30D made of a resin (e.g., polytetrafluoroethylene (PTFE)) or the like and holding the plurality of electrode rods 30B and the plurality of electrode rods 30C at one end, a dielectric tube 30E made of quartz or the like and covering each of the electrode rods 30B, a dielectric tube 30F made of quartz or the like and covering each of the electrode rods 30C, a collective electrode 30G made of aluminum or the like and connected in common to the plurality of electrode rods 30B, and a collective electrode 30H made of aluminum or the like and connected in common to the plurality of electrode rods 30C. The collection electrodes 30G and 30H are arranged, for example, so that they together form a circle in a plan view, and a plurality of electrode bars 30B and a plurality of electrode bars 30C are housed within the circle.

[0054] The electrode rods 30B and 30C are made of, for example, tungsten. Although rod-shaped electrode members are used in this embodiment, the shape of the electrode members is not limited to a rod shape. Furthermore, the plurality of electrode rods 30B and the plurality of electrode rods 30C are arranged alternately so as not to overlap in a planar view. In other words, the electrode rods 30B and the electrode rods 30C are arranged alternately in a planar view.

[0055] The dielectric tubes 30E covering the respective electrode rods 30B are held by the holding portions 30D at the ends of the electrode rods 30B that are not held by the holding portions 30D. The dielectric tubes 30F covering the respective electrode rods 30C are held by the holding portions 30D at the ends of the electrode rods 30C that are not held by the holding portions 30D.

[0056] As a result, one end of electrode rod 30B is held directly by holding portion 30D, and the other end is held by holding portion 30D via dielectric tube 30E. Similarly, one end of electrode rod 30C is held directly by holding portion 30D, and the other end is held by holding portion 30D via dielectric tube 30F.

[0057] When an AC voltage is applied between the collection electrode 30G and the collection electrode 30H by the AC power supply 40 (see FIG. 3), a creeping discharge occurs between the electrode rod 30B connected to the collection electrode 30G and the electrode rod 30C connected to the collection electrode 30H. Then, gas is converted into plasma around the discharge path of the discharge, and a plasma space is formed that spreads two-dimensionally along the surface of the dielectric member 30A separating the electrode rod 30B from the electrode rod 30C.

[0058] When the plasma space is formed, a carrier gas such as O2 (ozone gas), Ne, CO2, air, an inert gas, or a combination thereof is supplied to the plasma processing unit 30. The gas is supplied at a rate of, for example, 100 L / min. The gas is also supplied via a path 60A formed in the support unit 60. The inert gas is, for example, N2 or a rare gas. The rare gas is, for example, He or Ar.

[0059] When the plasma space is formed, the gas may also be supplied to the space below the plasma processing unit 30 (that is, the space above the substrate W).

[0060] Processing cup 12 also includes peripheral cup 12A, which is disposed surrounding spin chuck 10 in a plan view and which receives processing liquid that is discharged radially outward from substrate W, cups 12B and 12C, which are disposed between spin chuck 10 and peripheral cup 12A in a plan view, and guards 12D and 12E, which receive processing liquid that is discharged radially outward from substrate W. When viewed in a plan view, processing cup 12 has opening 112B formed therein corresponding to the position where substrate W is held.

[0061] The guards 12D and 12E can be raised and lowered by a lifting mechanism (not shown).

[0062] Cup 12B and cup 12C are cylindrical and are disposed radially inward of outer cup 12A, surrounding spin chuck 10. Cup 12C is disposed radially outward of cup 12B. Cup 12C is, for example, integral with guard 12E, and moves up and down together with guard 12E. The processing liquid guided to the bottom of cup 12B or cup 12C is recovered or discarded through a recovery pipe or a waste liquid pipe (not shown).

[0063] The guards 12D and 12E are disposed to surround the substrate W, the spin chuck 10, and the support portion 60 in a plan view.

[0064] The guard 12D includes a cylindrical portion 44A that surrounds the spin chuck 10 radially inward of the outer cup 12A, and an extension portion 44B that extends radially inward from the cylindrical portion 44A. The extension portion 44B is inclined upward relative to the horizontal direction as it extends radially inward. The extension portion 44B faces from below the extension portion of the outer cup 12A that extends radially inward.

[0065] The guard 12E includes a cylindrical portion 45A that surrounds the spin chuck 10 radially inward of the cylindrical portion 44A of the guard 12D, and an extension portion 45B that extends radially inward from the cylindrical portion 45A. The extension portion 45B faces the extension portion 44B from below.

[0066] An opening 112A is formed in the side wall of the peripheral cup 12A. The opening 112A is opened and closed by the shutter member 14 moving along the Z-axis direction as driven by the shutter movement mechanism 240 (see FIG. 3). In the example shown in FIG. 4, the shutter member 14 has moved in the positive direction of the Z-axis, so the opening 112A is open.

[0067] A fan filter unit (FFU) 16 is attached to the ceiling wall of the chamber 80 to further purify the air in the clean room where the processing units 100 are installed and supply the purified air to the processing space within the chamber 80. The FFU 16 is disposed above the spin chuck 10 and has a generally flat plate structure with generally flat upper and lower surfaces. A plurality of supply ports 16A are formed on the lower surface of the FFU 16. The FFU 16 is fixed to a partition wall (not shown) of the chamber 80 with a fixing device (not shown) so that its lower surface is generally horizontal. By arranging the FFU 16 in this manner, gas supplied from the plurality of supply ports 16A flows generally downward from the FFU 16, achieving a so-called downflow state. The FFU 16 is equipped with a fan and a filter (e.g., a high-efficiency particulate air filter (HEPA) filter) for taking in air from the clean room and sending the air to the processing cup 12 in the chamber 80.

[0068] The FFU 16 generates a downflow of clean air (see arrow 160 in FIG. 4) in the processing space within the chamber 80. The clean air is supplied at, for example, 3000 L / min. In order to uniformly distribute the clean air supplied from the FFU 16, a punched plate with a large number of blow-out holes may be provided directly below the ceiling wall of the chamber 80.

[0069] <Operation of the substrate processing apparatus> Next, the operation of the substrate processing apparatus will be described. The processing method by the substrate processing apparatus according to this embodiment includes the steps of: performing chemical processing on the substrate W transported to the processing unit 100; cleaning the substrate W after the chemical processing; drying the substrate W after the cleaning processing; and unloading the substrate W after the drying processing from the processing unit 100.

[0070] Hereinafter, the process of removing organic matter (e.g., used resist film) adhering to the substrate W during or after chemical liquid processing, which is included in the operation of the substrate processing apparatus, will be described with reference to FIGS. 5, 6 and 7 (i.e., a process belonging to the process of performing chemical liquid processing or the process of performing cleaning processing among the above processes). Here, FIG. 5 is a flowchart showing an example of the operation of the substrate processing apparatus. Also, FIGS. 6 and 7 are diagrams for explaining the operation of the substrate processing apparatus according to this embodiment.

[0071] First, the spin chuck 10 holds the substrate W (step ST01 in FIG. 5). Then, the spin chuck 10 is driven to rotate the substrate W.

[0072] At this time, the shutter member 14 is positioned (moved in the negative direction of the Z axis) to close the opening 112A provided in the side wall of the peripheral cup 12A by the control unit 90 controlling the driving of the shutter moving mechanism 240 (see FIG. 3). In this case, the clean air supplied from the FFU 16 enters the inner region surrounded by the processing cup 12 through the opening 112B formed in the upper part of the processing cup 12 and is blown onto the upper surface of the substrate W. Then, the clean air passes through the cup 12B or the cup 12C, etc., and is exhausted from the exhaust duct 50 leading to the inner region surrounded by the processing cup 12 (see arrow 160A). This flow path is referred to as the substrate-by-passing flow path. Note that the substrate-by-passing flow path may be a flow path that passes near the substrate W, and is not necessarily a flow path through which gas is blown onto the upper surface of the substrate W.

[0073] 6, the processing liquid 101 is supplied from the processing liquid supply source 29 to the processing liquid nozzle 20, and the processing liquid 101 is ejected from the processing liquid nozzle 20 onto the upper surface of the substrate W while the substrate W is rotating (step ST02 in FIG. 5). At this time, the position of the processing liquid nozzle 20 on the upper surface of the substrate W is adjusted by a nozzle arm (not shown) or the like. Note that, although the present embodiment shows a case where the processing liquid 101 is ejected while the substrate W is rotating, the substrate W does not have to be rotating, or the substrate W may be in a puddling state where it is rotating at a low speed.

[0074] 6, a liquid film 101A of the processing liquid 101 is formed on the upper surface of the substrate W (step ST03 in FIG. 5). Here, the thickness of the liquid film 101A is, for example, not less than 0.1 mm and not more than 2.0 mm, and preferably about 0.2 mm.

[0075] At this time, as described above, shutter member 14 is positioned (moved in the negative Z-axis direction) to close opening 112A provided in the side wall of peripheral cup 12A by control unit 90 controlling the driving of shutter movement mechanism 240 (see FIG. 3). Therefore, clean air supplied from FFU 16 passes through a substrate passing flow path that enters the inner region surrounded by processing cup 12 from opening 112B, and is exhausted from exhaust duct 50 (see arrow 160A).

[0076] Meanwhile, a predetermined AC voltage is applied between the collection electrodes 30G and 30H from the AC power supply 40, thereby generating plasma on the surface of the dielectric member 30A in the plasma processing unit 30 (step ST04 in FIG. 5). Specifically, a plasma space is formed that spreads two-dimensionally along the surface of the dielectric member 30A. The action of the plasma in the plasma space generates active species in the gas near the space. The active species include charged ions and electrically neutral radicals. For example, if the gas contains O2, the action of the plasma in the plasma processing unit 30 generates oxygen radicals, which are a type of active species.

[0077] Here, it is desirable that the plasma processing unit 30 waits at a predetermined waiting position (for example, a position sufficiently spaced from the substrate W in the positive Z-axis direction, as shown in FIG. 6) during the plasma generation stage as described above, and then, after a suitably uniform plasma is generated on the surface of the dielectric member 30A, moves to a processing position near the substrate W (for example, a position sufficiently close to the substrate W on the positive Z-axis side of the substrate W, as shown in FIG. 7) while supplying a carrier gas. In this embodiment, uniform processing can be performed by causing the plasma to act on the liquid film 101A on the surface of the substrate W while uniform plasma is generated. Note that a position sufficiently close to the substrate W is, for example, a position several mm away from the substrate W, and at this position, the plasma can be sufficiently applied to the thin liquid film 101A formed on the upper surface of the substrate W.

[0078] 7, activated species generated by the action of plasma 102 in plasma processing unit 30 are supplied to liquid film 101A (step ST05 in FIG. 5). That is, plasma processing is performed on substrate W by plasma processing unit 30.

[0079] The active species are supplied to the liquid film 101A, and thereby the active species in the liquid film 101A activate the processing liquid 101. For example, when the active species contain oxygen radicals, the oxidizing power of the oxygen radicals promotes removal of the resist film on the substrate W.

[0080] When the plasma processing unit 30 approaches the substrate W as described above, the control unit 90 controls the shutter movement mechanism 240 (see FIG. 3 ) to position the shutter member 14 to open the opening 112A provided in the sidewall of the peripheral cup 12A (moved in the positive direction of the Z axis). In this case, the clean air supplied from the FFU 16 passes through the outer region of the processing cup 12 in a plan view, enters the inner region of the peripheral cup 12A through the opening 112A formed in the sidewall of the processing cup 12, and is then exhausted from the exhaust duct 50 (see arrow 160B) without passing through cups 12B, 12C, and the substrate W. This flow path is referred to as a substrate bypass flow path.

[0081] Here, because opening 112B is also formed in the upper portion of processing cup 12, the clean air supplied from FFU 16 can also take a substrate-bypassing path that enters the area surrounded by processing cup 12 through opening 112B. However, the substrate-bypassing path passes through a gap between cup 12B and cylindrical portion 45A or a gap between cup 12C and cylindrical portion 44A, and has a higher pressure loss than an external path, which has fewer obstructions. Therefore, when shutter member 14 opens opening 112A, most of the clean air supplied from FFU 16 is exhausted from exhaust duct 50 via the substrate bypass path. In other words, the operation of shutter member 14 switches between the substrate-bypassing path and the substrate bypass path.

[0082] When clean air supplied from the FFU 16 flows through the substrate bypass flow path, it is possible to prevent gases other than the carrier gas from being supplied to the upper surface of the substrate W. That is, it is possible to stabilize the atmosphere in the space between the upper surface of the substrate W and the plasma processing unit 30. As a result, when the plasma processing unit 30 performs plasma processing (including the process of forming a plasma space, the operation of the plasma processing unit 30 approaching the substrate W, and the process of supplying activated species to the liquid film 101A), a sufficient concentration of carrier gas can be kept in the space, and the process can be performed effectively.

[0083] Also, via the board flow path When switching is performed between the substrate bypass flow path and the FFU 16, the flow rate of the gas supplied from the FFU 16 and the flow rate of the gas exhausted from the exhaust duct 50 are both maintained constant without significant changes. However, some fluctuations in the flow rates may occur. Therefore, the gas flow path can be changed at any timing without considering the pressure difference between the inside and outside of the chamber 80 or the difference in exhaust volume with other chambers 80 (i.e., without requiring time to control the gas supply volume or exhaust volume to adjust these).

[0084] In the above description, the operation of the processing liquid nozzle 20 is followed by the operation of the plasma processing unit 30, but the order of operations is not limited to this, and for example, the operation of the processing liquid nozzle 20 and the operation of the plasma processing unit 30 may be performed almost simultaneously.

[0085] Furthermore, in this embodiment, the plasma processing unit 30 is arranged to cover the entire upper surface of the substrate W, but if the plasma processing unit 30 is arranged to cover only a portion of the substrate W, the position of the plasma processing unit 30 on the upper surface of the substrate W may be moved in the rotational direction and radial direction of the substrate W along the upper surface of the substrate W as the substrate W rotates by a driving mechanism not shown.

[0086] Furthermore, the formation of the liquid film 101A is initiated by starting the supply of the processing liquid 101 onto the upper surface of the substrate W and is stopped by stopping the supply of the processing liquid 101 onto the upper surface of the substrate W, but the liquid film 101A can be maintained even after the supply of the processing liquid 101 from the processing liquid nozzle 20 is stopped as long as the substrate W is not rotating at a high speed (for example, when the substrate W is puddling, rotating at a low speed, or when the substrate W is not rotating). The supply of the active species to the liquid film 101A is performed after the supply of the processing liquid 101 is started and before the supply of the processing liquid 101 is stopped, but if the liquid film 101A is maintained, the active species may be supplied to the liquid film 101A after the supply of the processing liquid 101 is stopped.

[0087] After the above-described removal process, a rinsing process (cleaning process) and a drying process are usually performed on the substrate W. For example, the rinsing process is performed by discharging deionized water (DIW) onto the substrate W, and the drying process is performed by drying with isopropyl alcohol (IPA).

[0088] <Effects of the above-described embodiments> Next, examples of effects obtained by the above-described embodiments will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the above-described embodiments, but these may be replaced with other specific configurations exemplified in the present specification as long as the same effects are obtained. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0089] According to the embodiment described above, the substrate processing apparatus includes a substrate holding unit, a processing cup 12, a gas supply unit, and an exhaust unit. Here, the substrate holding unit corresponds to, for example, the spin chuck 10. The gas supply unit corresponds to, for example, the FFU 16. The exhaust unit corresponds to, for example, the exhaust duct 50. The spin chuck 10 holds a substrate W. The processing cup 12 surrounds the spin chuck 10. The FFU 16 supplies gas toward the processing cup 12. The exhaust duct 50 exhausts the gas supplied to the processing cup 12. Here, a gas flow path from the FFU 16, through an inner region surrounded by the processing cup 12 and the substrate W, to the exhaust duct 50 is referred to as a first flow path. Here, the first flow path corresponds to, for example, a substrate-passing flow path. A gas flow path from the FFU 16, through an outer region of the processing cup 12, to the exhaust duct 50 without passing through the substrate W is referred to as a second flow path. Here, the second flow path corresponds to, for example, a substrate bypass flow path. The substrate processing apparatus includes a switching unit. Here, the switching unit corresponds to, for example, the shutter member 14. The shutter member 14 can switch the gas flow path between the substrate via flow path and the substrate bypass flow path.

[0090] With this configuration, the gas flow path can be switched at a specific timing to suppress the supply of gas near the substrate W while continuing to circulate the gas inside the processing cup 12. Therefore, an atmosphere effective for the substrate processing can be formed near the substrate W depending on the content of the substrate processing.

[0091] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0092] Furthermore, according to the embodiment described above, the substrate processing apparatus includes a plasma processing unit 30 for performing plasma processing on a substrate W. The shutter member 14 switches the gas flow path to a substrate bypass flow path when the plasma processing unit 30 approaches the spin chuck 10. With this configuration, the gas flow path can be switched to a substrate bypass flow path when the plasma processing unit 30 approaches the substrate W to perform plasma processing, thereby stabilizing the atmosphere near the substrate during plasma processing. Therefore, the carrier gas used in plasma processing can be sufficiently retained near the substrate W, thereby improving the stability and uniformity of the plasma processing.

[0093] Furthermore, according to the embodiment described above, the switching unit is an openable / closable shutter member 14 provided on the side wall of processing cup 12. With this configuration, the gas flow path can be switched by a simple configuration provided on the side wall of processing cup 12.

[0094] Furthermore, according to the embodiment described above, exhaust duct 50 exhausts gas from the region inside processing cup 12. With this configuration, gas supplied to substrate W placed in the region inside processing cup 12 can be effectively exhausted from processing cup 12.

[0095] Furthermore, according to the embodiment described above, the amount of gas supplied by the FFU 16 and the amount of gas exhausted by the exhaust duct 50 are constant before and after switching between the substrate-via flow path and the substrate-bypass flow path by the shutter member 14. With this configuration, the gas flow path can be changed without changing the amount of gas supplied from the gas supply source and the amount of gas exhausted from the exhaust duct 50. Therefore, without considering the pressure difference between the inside and outside of the chamber 80 or the difference in exhaust amount with other chambers 80 (i.e., without considering the pressure difference between the inside and outside of the chamber 80 or the difference in exhaust amount with other chambers 80 for the purpose of adjusting these), the gas supply amount or exhaust amount can be changed without considering the pressure difference between the inside and outside of the chamber 80 or the difference in exhaust amount with other chambers 80 (i.e., without considering the pressure difference between the inside and outside of the chamber 80 or the difference in exhaust amount with other chambers 80 for the purpose of adjusting these). control time required The gas flow path can be changed at any time without changing the flow path.

[0096] According to the embodiment described above, in the substrate processing method, gas is supplied toward processing cup 12. Then, the gas supplied to processing cup 12 is exhausted. Here, a flow path through which the supplied gas is exhausted via an inner region surrounded by processing cup 12 and substrate W is referred to as a substrate bypass flow path. Also, a flow path through which the supplied gas is exhausted via an outer region of processing cup 12 without passing through substrate W is referred to as a substrate bypass flow path. Then, in the substrate processing method, the gas flow path is switched between the substrate bypass flow path and the substrate bypass flow path.

[0097] With this configuration, the gas flow path can be switched at a specific timing to suppress the supply of gas near the substrate W while continuing to circulate the gas inside the processing cup 12. Therefore, an atmosphere effective for the substrate processing can be formed near the substrate W depending on the content of the substrate processing.

[0098] Unless otherwise specified, the order in which the processes are performed can be changed.

[0099] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0100] Furthermore, according to the embodiment described above, in the substrate processing method, plasma processing is performed on the substrate W. Here, the step of switching the gas flow path between the substrate via flow path and the substrate bypass flow path is a step of switching the gas flow path to the substrate bypass flow path during plasma processing. With this configuration, the plasma processing unit 30 can switch to the substrate bypass flow path when performing plasma processing, thereby stabilizing the atmosphere near the substrate during plasma processing. Therefore, the carrier gas used in plasma processing can be sufficiently retained near the substrate W, thereby improving the stability and uniformity of the plasma processing.

[0101] <Modifications of the above-described embodiments> In the embodiment described above, the plasma processing unit 30 has a structure in which the dielectric member 30A is sandwiched between the electrode rods 30B and 30C in the Z-axis direction, but the present invention is not limited to such a structure.

[0102] Furthermore, in the embodiment described above, a shutter member 14 was used as a configuration for switching the gas flow path, but the means for switching the gas flow path is not limited to this configuration, and may be, for example, a mechanism in which the pressure loss in the flow path passing through the inside of the processing cup 12 changes as the processing cup 12 moves in the Z-axis direction, resulting in a change in the magnitude relationship between the pressure losses in the flow paths inside and outside the processing cup 12.

[0103] In addition, in the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may also be described, but these are merely examples in all aspects and are not limiting.

[0104] Thus, numerous variations and equivalents not shown are contemplated within the scope of the technology disclosed herein, including, for example, the modification, addition, or omission of at least one component.

[0105] Furthermore, in the embodiments described above, when a material name is mentioned without any particular specification, it is assumed that the material may contain other additives, such as an alloy, unless a contradiction arises. [Explanation of symbols]

[0106] 1. Substrate Processing System 10 Spin chuck 10A Spin Base 10C Rotational Axis 10D Spin Motor 10E zipper pin 12 Processing Cups 12A Peripheral Cup 12B, 12C cup 12D, 12E Guard 14 Shutter parts 16 FFU 16A supply port 20 Processing liquid nozzle 25 valves 29 Processing liquid supply source 30 Plasma processing section 30A Dielectric Material 30B,30C electrode rod 30D holding part 30E, 30F Dielectric tube 30G,30H collective electrode 40 AC power supply 44A, 45A cylindrical part 44B,45B extension part 50 Exhaust duct 60 Support part Route 60A 80 Chamber 90 Control Unit 91 CPU 92 ROM 93 RAM 94 Storage device 94P Processing Program 95 Bus Line 96 Input section 97 Display section 98 Communications Department 100 processing units 101 Processing liquid 101A Liquid film 102 Plasma 112A,112B opening 160, 160A, 160B arrows 220 Nozzle movement mechanism 230 Plasma Transfer Mechanism 240 Shutter movement mechanism 400 Loading Port 402 Indexer Robot 404 Substrate placement section 406 Center Robot

Claims

1. a substrate holder that holds a substrate; a processing cup surrounding the substrate holder; a gas supply unit that supplies gas toward the processing cup; an exhaust unit that exhausts the gas supplied to the processing cup; a plasma processing unit for performing plasma processing on the substrate; a path for supplying a carrier gas to the plasma treatment unit; a control unit; a first flow path of the gas that extends from the gas supply unit through an inner region surrounded by the processing cup and the substrate to the exhaust unit; a second flow path of the gas that extends from the gas supply unit through an area outside the processing cup and reaches the exhaust unit without passing through the substrate; a switching unit that can switch the gas flow path between the first flow path and the second flow path; the processing cup has an opening in a sidewall of the processing cup; the switching unit is an openable and closable shutter member provided on a side wall of the processing cup, the shutter member is disposed at a position where it opens the opening, thereby causing the gas flow path to become the second flow path; the control unit switches the gas flow path to the second flow path when the plasma processing unit performs the plasma processing on the substrate, and supplies the carrier gas to the plasma processing unit from the path when the plasma processing unit performs the plasma processing on the substrate. Substrate processing equipment.

2. The substrate processing apparatus according to claim 1, the switching unit switches the gas flow path to the second flow path when the plasma processing unit approaches the substrate holding unit. Substrate processing equipment.

3. 3. The substrate processing apparatus according to claim 1, The exhaust unit exhausts the gas from an area inside the processing cup. Substrate processing equipment.

4. 4. The substrate processing apparatus according to claim 1, a supply amount of the gas supplied by the gas supply unit and a discharge amount of the gas discharged by the discharge unit are constant before and after switching between the first flow path and the second flow path by the switching unit. Substrate processing equipment.

5. 5. The substrate processing apparatus according to claim 1, the gas supply unit has a substantially flat structure and is disposed above the substrate holding unit; A plurality of supply ports for supplying the gas are formed on the lower surface of the gas supply unit. Substrate processing equipment.

6. A substrate processing method using a substrate processing apparatus including a substrate holding unit that holds a substrate and a processing cup that surrounds the substrate holding unit, supplying a gas toward the processing cup; exhausting the gas supplied to the processing cup; performing plasma treatment on the substrate in a plasma treatment unit; supplying a carrier gas to the plasma processing unit when the plasma processing unit performs the plasma processing on the substrate; a flow path through which the supplied gas passes through an inner region surrounded by the processing cup and the substrate and is exhausted is defined as a first flow path; a second flow path through which the supplied gas passes through an area outside the processing cup and is exhausted without passing through the substrate; further comprising switching the gas flow path between the first flow path and the second flow path; the processing cup has an opening in a sidewall of the processing cup; the step of switching the gas flow path between the first flow path and the second flow path is a step of placing an openable / closable shutter member provided on a side wall of the processing cup at a position to open the opening, and switching the gas flow path to the second flow path during the plasma processing. Substrate processing method.

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