Substrate processing method and substrate processing apparatus

Abstract

To suppress damage to substrates when transferring substrates from a batch processing section to a single substrate processing section.SOLUTION: A substrate processing method includes the following processes: immersing a plurality of substrates in a chemical solution in a batch processing section; rinsing the substrates with a rinse solution after immersion in the chemical solution in the batch processing section; replacing at least part of the rinse solution in the substrates with IPA in the batch processing section; moving the substrates to a single substrate processing section after the rinse solution is replaced with IPA; and drying the substrates in the single substrate processing section.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The technology disclosed in this specification relates to substrate processing, and examples of substrates to be processed include semiconductor wafers, glass substrates for liquid crystal displays, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), and substrates for solar cells. [Background technology]

[0002] Batch processing apparatuses (hereinafter also referred to as batch processing apparatuses) that use phosphoric acid to etch silicon nitride films on substrates have been proposed (see, for example, Patent Document 1). Batch processing apparatuses can process multiple substrates at once, resulting in high throughput. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2016-502275 Summary of the Invention [Problem to be solved by the invention]

[0004] When a substrate that has been chemically treated in the batch processing apparatus is cleaned and then dried, if the surface pattern formed on the substrate is complex (for example, a three-dimensional structure), drying may be insufficient.

[0005] On the other hand, a single-wafer processing apparatus that processes substrates one by one (hereinafter also referred to as a single-wafer processing apparatus) has a high drying capacity, and therefore can perform the above drying appropriately.

[0006] However, when the substrates are transferred from the batch processing section to the single wafer processing section, the substrates may be unintentionally dried, which may cause problems such as damage to the surface pattern.

[0007] The technology disclosed in this specification has been made in consideration of the problems described above, and is a technology for suppressing damage to substrates when they are moved from a batch processing unit to a single-wafer processing unit. [Means for solving the problem]

[0008] A substrate processing method according to a first aspect of the technology disclosed in the present specification is a substrate processing method that performs substrate processing using a batch processing unit that processes a plurality of substrates and a single wafer processing unit that processes a single substrate, the method comprising the steps of: immersing the plurality of substrates in a chemical solution in the batch processing unit; cleaning the substrates after immersion in the chemical solution with a rinse solution in the batch processing unit; and removing the rinse solution from the substrates in the batch processing unit. One a step of replacing the rinse liquid with IPA; a step of moving the substrate after the rinse liquid has been replaced with IPA to the single wafer processing section; and a step of drying the substrate in the single wafer processing section. and a step of replacing the rinse liquid on the substrate with the IPA in the single wafer processing unit before the step of drying the substrate. .

[0009] A substrate processing method according to a second aspect of the technology disclosed in the present specification is related to the substrate processing method according to the first aspect, in which the IPA includes diluted IPA.

[0010] A substrate processing method according to a third aspect of the technology disclosed in the present specification is related to the substrate processing method according to the first or second aspect, and the step of replacing the rinse liquid on the substrate with IPA is a step of spraying the IPA in atomized form onto the substrate.

[0011] A substrate processing method that is a fourth aspect of the technology disclosed in the present specification is related to any one of the substrate processing methods from the first to third aspects, and further includes a step of changing the orientation of the substrate from a vertical orientation to a horizontal orientation after the rinse liquid has been replaced with the IPA.

[0013] The first technology disclosed in the present specification 5 The substrate processing method according to the embodiment includes the first to 4 In the substrate processing method according to any one of the above aspects, the substrate after being immersed in the chemical solution is a layered substrate having a three-dimensional surface pattern.

[0014] The first technology disclosed in the present specification 6 The substrate processing method according to the embodiment includes the first to 5 The present invention relates to a substrate processing method according to any one of the above aspects, wherein the step of replacing the rinse liquid in the substrate with IPA can be selected to be performed when the substrate is hydrophobic and not to be performed when the substrate is hydrophilic, and the step of moving the substrate to the single-wafer processing unit is a step of moving the substrate to the single-wafer processing unit after being cleaned with the rinse liquid when the substrate is hydrophilic.

[0015] The first technology disclosed in the present specification 7 The substrate processing apparatus according to the aspect of the present invention includes a batch processing section that processes a plurality of substrates, a single wafer processing section that processes one of the substrates, and a transfer section that transfers the substrate from the batch processing section to the single wafer processing section, and the batch processing section includes an immersion section that immerses the plurality of substrates in a chemical solution, a liquid cleaning section that cleans the substrates with a rinse solution after they have been immersed in the chemical solution, and a transfer section that transfers the rinse solution to the substrates. Part of a replacement unit that replaces the rinse liquid with IPA, the transfer unit transfers the substrate after the rinse liquid has been replaced with IPA to the single wafer processing unit, and the single wafer processing unit includes a drying unit that dries the substrate transferred from the batch processing unit. a nozzle for replacing the rinse liquid on the substrate with the IPA before drying the substrate transferred from the batch processing unit; Equipped with. [Effects of the Invention]

[0016] At least one of the techniques disclosed herein, 7According to this aspect, when a substrate is transferred from a batch processing unit to a single-wafer processing unit, the rinse liquid on the substrate is replaced with IPA, thereby preventing the substrate surface from drying during the transfer. Therefore, whether the substrate is hydrophilic or hydrophobic, damage (collapse) of the pattern formed on the substrate surface can be prevented during the transfer. Furthermore, because the surface tension of IPA is lower than that of water, even if the position of the liquid surface of IPA applied to the substrate surface fluctuates, the effect of the force (surface tension) on the pattern formed on the substrate surface is smaller than that of water. Therefore, damage to the pattern formed on the substrate surface can be prevented more effectively than when water is applied to the substrate during the transfer from a batch processing unit to a single-wafer processing unit.

[0017] Furthermore, objects, features, aspects, and advantages associated with the technology disclosed herein will become more apparent from the detailed description and accompanying drawings set forth below. [Brief explanation of the drawings]

[0018] [Figure 1] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Figure 2] 1A and 1B are diagrams partially and schematically illustrating an example of a three-dimensional structure formed on a substrate. [Figure 3] 1 is a flowchart illustrating an example of a processing step for a substrate according to an embodiment. [Figure 4] FIG. 2 is a diagram illustrating an example of a configuration of a batch processing unit. [Figure 5] FIG. 2 is a diagram illustrating an example of a configuration of a batch processing unit. [Figure 6] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot. [Figure 7] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot. [Figure 8] FIG. 2 is a diagram illustrating an example of the configuration of a single-wafer processing section. [Figure 9] FIG. 2 is a diagram illustrating an example of a configuration of a transport robot and its surroundings. [Figure 10] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Figure 11] 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus according to an embodiment; DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features will be shown for the purpose of explaining the technology, but these are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0020] The drawings are schematic, and for the sake of convenience, components may be omitted or simplified as appropriate. The relative sizes and positions of components shown in different drawings are not necessarily accurately depicted and may be changed as appropriate. Hatching may also be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the embodiments.

[0021] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions of them may be omitted to avoid duplication.

[0022] Furthermore, in the description given in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0023] Furthermore, although ordinal numbers such as "first" or "second" may be used in the descriptions in this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and the contents of the embodiments are not limited to the order that may result from these ordinal numbers.

[0024] Furthermore, in the description given in this specification, expressions such as "positive direction of the ... axis" or "negative direction of the ... axis" refer to the direction along the arrow of the ... axis shown in the figure as the positive direction, and the direction opposite to the arrow of the ... axis shown in the figure as the negative direction.

[0025] Furthermore, in the explanations given in this specification, expressions indicating relative or absolute positional relationships, such as "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," or "coaxial," unless otherwise specified, include cases where the positional relationship is strictly indicated, and cases where the angle or distance is displaced within a tolerance or within a range where equivalent functionality is obtained.

[0026] Furthermore, in the description provided in this specification, terms that indicate specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," may be used, but these terms are used for convenience to facilitate understanding of the contents of the embodiments and have no relation to the positions or directions when the embodiments are actually implemented.

[0027] First Embodiment The substrate processing apparatus and the substrate processing method according to this embodiment will be described below.

[0028] <Overall configuration of the substrate processing equipment> 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 10 according to the present embodiment. In FIG. 1, the Z-axis direction is the vertically upward direction. The substrate processing apparatus 10 is an apparatus for performing wet processing on a substrate W.

[0029] The substrate W is, for example, a semiconductor substrate, and a surface pattern is formed on the surface thereof. A specific example of the surface pattern is a three-dimensional structure formed during the manufacturing process of a three-dimensional NAND (Not-AND) flash memory.

[0030] 2 is a partial schematic view showing an example of a three-dimensional structure formed on a substrate W. In the example of FIG. 2, the substrate W includes a support layer 93. The support layer 93 is, for example, a silicon layer. A laminated structure 90 is formed on the upper surface of the support layer 93.

[0031] The laminated structure 90 includes a plurality of insulating films 91 and a plurality of sacrificial films 92. The insulating films 91 and the sacrificial films 92 are alternately laminated in the Z-axis direction. The insulating films 91 are, for example, silicon dioxide films, and the sacrificial films 92 are, for example, silicon nitride films. The thicknesses of the insulating films 91 and the sacrificial films 92 are, for example, not less than 1 nm and not more than 50 nm.

[0032] Furthermore, a trench 94 is formed in the stacked structure 90. The trench 94 penetrates the stacked structure 90 in the thickness direction of the substrate W. Furthermore, a pillar (not shown) is provided in the stacked structure 90. The pillar supports the insulating film 91 when the sacrificial film 92 is removed. The width of the pillar (the width parallel to the main surface of the substrate W) is, for example, not less than 1 nm and not more than 50 nm.

[0033] Although the present embodiment describes a specific example in which the substrate processing apparatus 10 etches the sacrificial film 92, the substrate processing apparatus 10 may also perform other processes on the substrate W. Below, an example of the overall configuration of the substrate processing apparatus 10 will be outlined, and then an example of each configuration will be described in detail.

[0034] As shown in the example of FIG. 1, the substrate processing apparatus 10 includes a batch processing section 30 that processes multiple substrates W collectively (i.e., performs batch-type substrate processing), a single-wafer processing section 50 that processes substrates one by one (i.e., performs single-wafer substrate processing), an inter-batch transport section 60, and an inter-batch single-wafer transport section 70.

[0035] 1, the substrate processing apparatus 10 includes a housing 100, which houses at least a batch processing section 30, a single wafer processing section 50, an inter-batch transport section 60, and an inter-batch single wafer transport section 70. That is, in the example of FIG. 1, the substrate processing apparatus 10 is a hybrid type substrate processing apparatus in which the batch processing section 30 and the single wafer processing section 50 are mixed within the same housing 100.

[0036] 1, the substrate processing apparatus 10 is also provided with a load port 11 as a loading port into which a plurality of substrates W are loaded from outside. A portable container (hereinafter referred to as a carrier C1) for storing a plurality of substrates W is loaded into the load port 11. In the example of FIG. 1, a plurality of carriers C1 are placed in a line along the Y-axis direction on the load port 11.

[0037] The carrier C1 may be a FOUP (Front Opening Unified Pod) that stores substrates W in an enclosed space, a SMIF (Standard Mechanical Interface) pod, or an OC (Open Cassette) that exposes substrates W to the outside air. Here, multiple substrates W are stored in the carrier C1 in a horizontal position with their surfaces facing the positive direction of the Z axis and lined up in the Z axis direction. The horizontal position here means that the thickness direction of the substrates W is along the Z axis direction. The number of substrates W stored in the carrier C1 is not particularly limited, but is, for example, 25.

[0038] 1, the substrate processing apparatus 10 is also provided with an indexer transport unit 20 that transports multiple substrates W between each carrier C1 and the inter-batch transport unit 60. The indexer transport unit 20 is provided within the housing 100. The indexer transport unit 20 picks up multiple substrates W from each carrier C1 at once, converts the orientation of the substrates W from a horizontal orientation to an upright orientation (vertical orientation), and transports the multiple substrates W in the upright orientation to the inter-batch transport unit 60. The upright orientation (vertical orientation) here refers to an orientation in which the thickness direction of the substrates W is aligned with the horizontal direction.

[0039] The indexer transport section 20 transfers the plurality of substrates W to the inter-batch transport section 60 in an upright position, for example, with the surfaces of the substrates W facing in the negative direction of the Y axis.

[0040] The inter-batch transport section 60 receives a plurality of substrates W in an upright position from the indexer transport section 20 all at once, and transports the received plurality of substrates W all at once to the batch processing section 30 in sequence.

[0041] The batch processing unit 30 is a batch-type processing apparatus that performs wet processing on a plurality of substrates W in a batch. Specifically, the batch processing unit 30 includes a processing tank 31, which will be described later. A processing liquid is stored in the processing tank 31. By immersing the plurality of substrates W in the processing liquid in the processing tank 31, the batch processing unit 30 can perform processing on the plurality of substrates W in a batch according to the processing liquid.

[0042] 1, a plurality of batch processing units 30 are arranged in a line along the X-axis direction. In addition, in the example of Fig. 1, the plurality of batch processing units 30 include a batch processing unit 30a for chemical liquids, a batch processing unit 30b for rinse liquids, and a batch processing unit 30c for IPA (isopropyl alcohol), which is an organic solvent.

[0043] The processing tank 31 of the batch processing unit 30a stores a chemical solution. When the substrate processing apparatus 10 etches the sacrificial film 92 of the substrate W, the chemical solution contains an etching solution (e.g., phosphoric acid) that can remove the sacrificial film 92. By immersing a plurality of substrates W in this chemical solution, the chemical solution acts on the sacrificial film 92 through the trenches 94 of each substrate W, and can etch the sacrificial film 92.

[0044] The processing tank 31 of the batch processing unit 30b stores a rinse liquid. The rinse liquid includes, for example, pure water. After chemical processing, the substrates W are immersed in the rinse liquid to clean the substrates W, and the chemical liquid adhering to the substrates W can be replaced with the rinse liquid.

[0045] The processing tank 31 of the batch processing unit 30c stores IPA. By immersing the plurality of substrates W after the rinsing processing in IPA, at least a portion of the rinse liquid adhering to the plurality of substrates W can be replaced with IPA.

[0046] Here, the IPA in the processing tank 31 of the batch processing unit 30c may be diluted IPA. This diluted IPA may be diluted by performing IPA processing multiple times in the processing tank 31 of the batch processing unit 30c and mixing a rinse liquid (pure water) into the IPA. In other words, the IPA in the processing tank 31 of the batch processing unit 30c may be used repeatedly in multiple IPA processings as long as the concentration of the IPA does not fall below a predetermined value.

[0047] The inter-batch transport unit 60 first receives a plurality of substrates W in an upright position from the indexer transport unit 20, and transports the received plurality of substrates W to the batch processing unit 30a. The plurality of substrates W are collectively treated with a chemical solution by the batch processing unit 30a. As a result, for example, the sacrificial film 92 on each of the substrates W is removed. With the removal of the sacrificial film 92, the insulating film 91 is no longer supported by the sacrificial film 92. Therefore, the insulating film 91 becomes more susceptible to collapse.

[0048] Next, the inter-batch transfer unit 60 receives the plurality of chemically processed substrates W from the batch processing unit 30a and transfers the received plurality of substrates W to the batch processing unit 30b. During this transfer, the plurality of substrates W are transferred with the processing liquid (chemical liquid in this case) attached thereto. Therefore, during this transfer, collapse of the three-dimensional structure of the substrates W (for example, the insulating film 91) due to drying can be suppressed.

[0049] The plurality of substrates W transferred to the batch processing unit 30b are collectively rinsed by the batch processing unit 30b, whereby the chemical liquid adhering to each substrate W is replaced with the rinse liquid.

[0050] Next, the inter-batch transfer unit 60 receives the plurality of substrates W from the batch processing unit 30b and transfers the received plurality of substrates W to the batch processing unit 30c. During this transfer, the plurality of substrates W are transferred with the processing liquid (here, the rinse liquid) adhering to them. Therefore, during this transfer, collapse of the three-dimensional structure of the substrates W due to drying can be suppressed.

[0051] 1, the batch inter-substrate transfer unit 70 is provided in the negative Y-axis direction relative to the batch processing unit 30c. The batch inter-substrate transfer unit 70 receives the substrates W removed from the batch processing unit 30c by the inter-batch transfer unit 60, and transfers each substrate W one by one to the single-substrate processing unit 50.

[0052] The batch inter-substrate transfer section 70 takes out the substrates W with IPA attached thereto from the batch inter-substrate transfer section 60. Then, the batch inter-substrate transfer section 70 transfers each of the substrates W in the horizontal position to the single substrate processing section 50 one by one.

[0053] In the example of Fig. 1, the single-wafer processing section 50 is disposed in the negative direction of the Y-axis relative to the batch inter-wafer transport section 70. Also, in the example of Fig. 1, a plurality of single-wafer processing sections 50 are arranged in a matrix in a plan view. As a specific example, four single-wafer processing sections 50 are arranged in a matrix of two rows and two columns. The batch inter-wafer transport section 70 transports substrates W one by one to each single-wafer processing section 50.

[0054] The single-wafer processing section 50 performs at least a drying process on the substrates W. The drying process is not particularly limited, but may be, for example, spin drying. That is, the single-wafer processing section 50 may dry the substrates W by rotating the substrates W around a rotation axis Q1 that passes through the center of the substrate W and is aligned with the Z axis. Since the single-wafer processing section 50 dries the substrates W one by one, the substrates W can be dried with higher drying performance. Therefore, collapse of the three-dimensional structure of the substrates W due to drying can be suppressed.

[0055] The single wafer processing section 50 may supply pure water, IPA, or the like to the main surface of the substrate W as a process prior to the drying process.

[0056] Furthermore, the single wafer processing unit 50 may supply a processing liquid for forming a water-repellent film onto the surface of the substrate W as a pre-processing step, and then supply water, IPA, or the like. This can prevent the three-dimensional structure of the substrate W from collapsing during the drying process.

[0057] Furthermore, as a pre-processing step, the single wafer processing section 50 may supply a supercritical liquid to the surface of the substrate W. This also makes it possible to prevent the three-dimensional structure of the substrate W from collapsing during the drying process.

[0058] The batch inter-substrate transport section 70 takes out the dried substrates W from each single-substrate processing section 50 and transports the substrates W to the indexer transport section 20 via the relay unit 12. The relay unit 12 includes a storage container (not shown) that stores the substrates W in a state where the substrates W are lined up along the Z-axis direction.

[0059] The batch single-substrate transport section 70 transports the substrates W one by one from the single-substrate processing section 50 to the relay unit 12. With each transport, the number of substrates W stored in the relay unit 12 increases. When a predetermined number of substrates W (for example, 25 substrates) have been stored in the relay unit 12, the indexer transport section 20 removes the substrates W from the relay unit 12 all at once and transports the substrates W to the carrier C1 of the load port 11.

[0060] <Example of operation of substrate processing apparatus> 3 is a flowchart illustrating an example of a process for processing substrates W according to the present embodiment. As shown in the example of FIG. 3, first, a batch-type chemical liquid process is performed on a plurality of substrates W (step ST1).

[0061] Next, a batch rinse process is performed on the plurality of substrates W (step ST2).

[0062] Next, a batch IPA treatment is performed on a plurality of substrates W (step ST3).

[0063] Next, each substrate W is subjected to a single-wafer drying process (step ST4).

[0064] The substrate W dried by the single wafer processing section 50 is transported to the carrier C1 via the batch inter-substrate transport section 70, the relay unit 12 and the indexer transport section 20.

[0065] As described above, according to the substrate processing apparatus 10, the batch processing section 30 can process a plurality of substrates W collectively (steps ST1 and ST2), thereby enabling the substrates W to be processed with a high throughput.

[0066] After the batch processing, the plurality of substrates W have IPA attached thereto, and therefore, the substrates W can be prevented from drying out while being transported from the batch processing section 30c to the single wafer processing section 50. Therefore, collapse of the three-dimensional structure of the substrates W due to the drying can be prevented.

[0067] Here, the above-described mode of transporting the substrate W with IPA attached thereto is particularly desirable when the substrate W is hydrophobic. On the other hand, when the substrate W is hydrophilic, it is desirable to transport the substrate W with a rinse liquid (pure water) attached thereto.

[0068] Therefore, if the substrate W is hydrophobic, it is desirable to transport the substrate W to the batch processing unit 30c by the inter-batch transport unit 60, and then transport the substrate W with IPA adhering to the batch inter-wafer transport unit 70. On the other hand, if the substrate W is hydrophilic, it is desirable to transport the substrate W to the batch processing unit 30b by the inter-batch transport unit 60, and then transport the substrate W with rinsing liquid (pure water) adhering to the batch inter-wafer transport unit 70.

[0069] Furthermore, the substrates W are subjected to drying processing one by one by the single wafer processing unit 50 (step ST4). That is, in this embodiment, after the batch-type wet processing, a single wafer drying processing is performed instead of a batch-type drying processing. Therefore, the substrates W can be dried with high drying performance. Therefore, collapse of the three-dimensional structure of the substrates W due to drying can be suppressed.

[0070] <Specific examples of each configuration> A specific example of each configuration of the substrate processing apparatus 10 will be described below.

[0071] <About the indexer transport section> 1, the indexer transport section 20 includes a transport robot 21. The transport robot 21 is provided so as to be movable along the Y-axis direction in the positive direction of the X-axis relative to the load port 11. The transport robot 21 can stop at a position facing each of the carriers C1 placed on the load port 11 in the X-axis direction.

[0072] 1, the transport robot 21 includes a plurality of (for example, 25) hands 211 and an upright support member 212. The plurality of hands 211 are arranged side by side in the Z-axis direction. The transport robot 21 removes a plurality of unprocessed substrates W from the carrier C1 by moving the plurality of hands 211. As a result, one substrate W is placed on each hand 211.

[0073] Each hand 211 is provided with an upright support member 212 that supports the substrate W at its base. The upright support member 212 is provided to be movable in the X-axis direction, and by moving in the negative X-axis direction with the substrate W held on the hand 211, the end of the substrate W in the negative X-axis direction is clamped in its thickness direction.

[0074] Here, the transfer robot 21 has a posture changing function that changes the posture of the plurality of substrates W from a horizontal posture to an upright posture. Specifically, the transfer robot 21 rotates the plurality of hands 211 by 90 degrees around a rotation axis along the Y-axis direction. This rotation is achieved, for example, by a motor or the like. As a result, the thickness direction of the substrate W is aligned with the X-axis direction. The transfer robot 21 also rotates the plurality of hands 211 by 90 degrees around a rotation axis along the Z-axis direction. This rotation is also achieved, for example, by a motor or the like. As a result, the thickness direction of the substrate W is aligned with the Y-axis direction. Here, the transfer robot 21 changes the posture of the substrate W so that the surface of the substrate W faces in the negative Y-axis direction. Then, while holding the plurality of substrates W, the transfer robot 21 moves to the end of its movement path in the positive Y-axis direction and hands over the plurality of substrates W to the inter-batch transfer unit 60.

[0075] As described above, the indexer transport section 20 takes out the plurality of unprocessed substrates W from the carrier C1, converts the orientation of the substrates W into an upright orientation, and transports the plurality of upright substrates W to the inter-batch transport section 60.

[0076] Furthermore, the transport robot 21 collectively removes the plurality of processed substrates W from the relay unit 12 at a predetermined position on its movement path. Then, the transport robot 21 stores the plurality of processed substrates W in the carrier C1 of the load port 11.

[0077] <About the batch processing unit> Next, a description will be given of the batch processing unit 30. In the example of Fig. 1, a plurality of batch processing units 30 are arranged in a line along the X-axis direction.

[0078] 4 is a diagram schematically illustrating an example of the configuration of the batch processing unit 30. The batch processing unit 30 includes a processing tank 31 and a lifter 32. The processing tank 31 has a box shape that opens in the positive direction of the Z axis, and stores the processing liquid.

[0079] The lifter 32 includes a plurality of holding members 33 (three in the figure) that hold a plurality of substrates W in an upright position, a base 34 that supports the holding members 33, and an elevating mechanism 35 that raises and lowers the base 34. Each holding member 33 has an elongated shape extending in the Y-axis direction, and its base end in the positive Y-axis direction is attached to the base 34. Each holding member 33 has a plurality of grooves (not shown) formed in a line in the Y-axis direction. The pitch of the grooves is equal to the pitch of the plurality of substrates W. The ends of the substrates W are inserted into the respective grooves of the holding members 33, so that the plurality of holding members 33 hold the plurality of substrates W in an upright position. The base 34 has a plate-like shape and is disposed such that its thickness direction is aligned with the Y-axis direction. The elevating mechanism 35 raises and lowers the base 34, thereby raising and lowering the plurality of substrates W held by the holding members 33. Hereinafter, the main body that is raised and lowered by the elevating mechanism 35 may be described as the lifter 32.

[0080] The lifter 32 raises and lowers the plurality of substrates W between a transfer position in the positive direction of the Z axis from the processing tank 31 and a processing position within the processing tank 31. The transfer position is a position where the plurality of substrates are transferred between the lifter 32 and the inter-batch transport section 60. In the example of Figure 4, the lifter 32 positioned at the transfer position is shown by a solid line. The processing position is a position where the plurality of substrates W are immersed in the processing liquid. The lifter 32 moves the plurality of substrates W to the processing position, whereby the plurality of substrates W are processed. In the example of Figure 4, the lifter 32 and the substrates W positioned at the processing position are schematically shown by a two-dot chain line.

[0081] The batch processing unit 30 is provided with a supply unit that supplies the processing liquid to the processing tank 31 and a discharge unit that discharges the processing liquid from the processing tank 31. If necessary, the batch processing unit 30 may also be provided with at least one of a gas supply unit that supplies gas to the processing liquid in the processing tank 31 and a circulation unit that returns the processing liquid that has overflowed from the processing tank 31 in the positive direction of the Z axis back to the processing tank 31.

[0082] In the above case, the batch processing unit 30 immerses the substrate W in a processing liquid (chemical liquid, rinse liquid, or IPA), but it may also be configured to spray a spray of the processing liquid (chemical liquid, rinse liquid, or IPA) onto the substrate W.

[0083] 5 is a diagram schematically illustrating an example of the configuration of the batch processing unit 30. The batch processing unit 330 includes a lifter 32, a tray 41, an opening / closing member 43, and a nozzle .

[0084] Vat 41 has a box-like shape. Opening and closing member 43 is provided on vat 41 and switches between a sealed state in which the internal space of vat 41 is sealed and an open state in which the internal space is connected to the external space.

[0085] 5, the vat 41 opens in the positive direction of the Z axis, and the opening / closing member 43 is provided at the end of the vat 41 in the positive direction of the Z axis. The opening / closing member 43 is a lid or a shutter. The lifter 32 raises and lowers the plurality of substrates W between a transfer position and a standby position.

[0086] The nozzle 44 is provided in the vat 41 and supplies liquid to the plurality of substrates W. The nozzle 44 may be a shower nozzle that ejects a shower of liquid onto the plurality of substrates W, or a mist nozzle that ejects a mist (atomized) of liquid onto the plurality of substrates W.

[0087] In the example of Fig. 5, the nozzles 44 are provided in the positive direction of the Z axis relative to the plurality of substrates W positioned at the standby position. Also, in the example of Fig. 5, a pair of nozzles 44 is provided. The respective nozzles 44 are provided on opposite sides of the substrates W in the X axis direction. Note that the plurality of nozzles 44 may also be arranged along the Y axis direction.

[0088] The nozzle 44 is connected to a supply source through a supply pipe 441. The supply source has a tank that stores liquid. A valve 442 is provided in the supply pipe 441. When the valve 442 is opened, the liquid is supplied from the supply source to the nozzle 44 through the supply pipe 441, and the processing liquid is discharged from the discharge port of the nozzle 44 toward the plurality of substrates W. As a result, the liquid adheres to the plurality of substrates W.

[0089] The liquid flowing down from the plurality of substrates W may be discharged to the outside through a discharge unit 45 connected to the bottom of the vat 41. The discharge unit 45 includes, for example, a discharge pipe and a valve.

[0090] Furthermore, although the nozzle 44 ejects liquid in the above example, vapor of the liquid may also be ejected. In this case, the supply source may supply vapor generated by heating the liquid to the supply pipe 441, for example. When vapor of the liquid is supplied to the substrate W, the vapor may condense on the surface of the substrate W, allowing the liquid to adhere to the substrate W. Furthermore, supplying vapor can bring the partial pressure of the vapor in the internal space of the vat 41 close to the saturated vapor pressure, thereby suppressing evaporation of the liquid on the substrate W.

[0091] 5, the vat 41 is provided with a relative displacement mechanism 46. The relative displacement mechanism 46 changes the positional relationship between the discharge port 44a of the nozzle 44 and the substrate W. For example, the relative displacement mechanism 46 raises and lowers the nozzle 44 relative to the plurality of substrates W. In this case, the relative displacement mechanism 46 has, for example, a lifting mechanism such as a ball screw mechanism including a motor, a cam mechanism, or a cylinder mechanism.

[0092] The relative displacement mechanism 46 raises and lowers the nozzle 44, thereby changing the position at which the liquid adheres to the surface of the substrate W. This allows the liquid to adhere to a wide area on the surface of the substrate W, and makes it possible to uniformly prevent the substrate W from drying.

[0093] <About the inter-batch transport section> The inter-batch transfer section 60 includes a transfer robot 65 and a transfer robot 66. In the example of FIG.

[0094] The holding members 611 are members that hold a plurality of upright substrates W. The holding members 611 are arranged side by side in the X-axis direction, and are attached to a base member (not shown) so as to be displaceable.

[0095] The opening / closing mechanism 613 displaces the holding members 611 between their respective closed and open positions. The closed position is a position where the distance between the two holding members 611 is narrow, and the holding members 611 clamp multiple substrates W. In the example of FIG. 4, the holding members 611 positioned in the closed position are schematically shown by two-dot chain lines. The open position is a position where the distance between the two holding members 611 is wider than the distance in the closed position, and the holding members 611 release their hold on multiple substrates W. The opening / closing mechanism 613 includes, for example, a motor or an air cylinder.

[0096] The transport robot 65 is provided so as to be movable in the X-axis direction directly above the batch processing units 30a and 30b. The movement mechanism (e.g., a ball screw mechanism) of the transport robot 65 is provided further in the positive Y-axis direction than the batch processing units 30. The transport robot 65 receives a plurality of substrates W in an upright position from the indexer transport unit 20 (e.g., the transport robot 21) at the end of its movement path in the negative X-axis direction. Here, the transport robot 65 receives a plurality of substrates W in an upright position with the surfaces of the substrates W facing in the positive Y-axis direction. The transport robot 65 then transports the plurality of substrates W to the batch processing units 30a and 30b in this order.

[0097] The transfer robot 66 is provided so as to be movable along the X-axis direction directly above the batch processing unit 30b and the batch processing unit 30c. The transfer robot 66 receives a plurality of substrates W in an upright position from the batch processing unit 30b, and transfers the plurality of substrates W to the batch processing unit 30c.

[0098] Furthermore, the transfer robot 66 receives a plurality of substrates W in an upright position from the batch processing unit 30c, and converts the position of the plurality of substrates W from the upright position (vertical position) to a horizontal position.

[0099] 6 and 7 are diagrams schematically illustrating an example of the configuration of the transport robot 66. Fig. 6 illustrates the transport robot 66 when viewed along the Y-axis direction, and Fig. 7 illustrates the transport robot 66 when viewed along the Z-axis direction.

[0100] 6 and 7, the transfer robot 66 includes a pair of holding members 661, a base 662, an opening / closing mechanism 663, and a rotation mechanism 664. The holding members 661 are members that hold a plurality of substrates W.

[0101] The holding member 661 includes a contact member 6611, a support member 6612, and a rotating member 6613. Each support member 6612 has, for example, an elongated shape that is long in the Y-axis direction, and its base end in the positive Y-axis direction is attached so as to be displaceable relative to the base 662. The two support members 6612 are spaced apart from each other in the X-axis direction.

[0102] The opening / closing mechanism 663 displaces the support members 6612 between their respective open and closed positions. The closed position is a position where the two support members 6612 are spaced apart closely, and the holding members 661 support multiple substrates W. The open position is a position where the two support members 6612 are spaced apart widely, and the holding members 661 release their hold on the substrates W. The opening / closing mechanism 663 includes, for example, a motor or an air cylinder.

[0103] Each of the rotating members 6613 is attached to the support member 6612 so as to be rotatable around a rotation axis Q5. The rotation axis Q5 is an axis along the X-axis direction. The two rotating members 6613 are provided coaxially.

[0104] Contact members 6611 are provided at the ends of the rotating members 6613 that are closer to each other. That is, the contact member 6611 located in the negative X-axis direction is provided at the end of the negative X-axis rotating member 6613 at the positive X-axis direction, and the contact member 6611 located in the positive X-axis direction is provided at the end of the negative X-axis rotating member 6613 at the positive X-axis direction.

[0105] The contact members 6611 are displaced integrally with the support members 6612 and the rotating members 6613 relative to the base 662. Therefore, when the opening / closing mechanism 663 moves the support members 6612 to the closed position, the distance between the contact members 6611 narrows. In this closed position, the contact members 6611 support multiple substrates W in an upright position.

[0106] In the example of Figure 6, the contact members 6611 have an arc-like shape in which the distance between the contact members 6611 narrows toward the negative direction of the Z axis. In the closed position, the negative Z-axis direction portion of each contact member 6611 comes into contact with the side surfaces of multiple substrates W to support the multiple substrates W. In addition, multiple grooves aligned along the Y axis direction are formed on the opposing surfaces of the contact members 6611. The pitch of the grooves is equal to the pitch of the multiple substrates W. By inserting the ends of the substrates W into each groove, each substrate W is also supported in the Y axis direction by the corresponding contact member 6611. This maintains the upright posture of the substrates W.

[0107] Each groove of the contact member 6611 has a shape that allows each substrate W to be pulled out in the positive direction of the Z axis from the contact member 6611. Hereinafter, the end of the contact member 6611 in the positive direction of the Z axis in the upright posture may be referred to as the access side end.

[0108] The rotation mechanism 664 rotates the rotation member 6613 by 90 degrees around the rotation axis Q5 relative to the support member 6612. As a result, the multiple substrates W held by the contact member 6611 also rotate by 90 degrees around the rotation axis Q5, and the orientation of the substrates W is converted from an upright orientation (vertical orientation) to a horizontal orientation. Here, the rotation mechanism 664 rotates the multiple substrates W by 90 degrees so that the surfaces of the substrates W face the positive direction of the Z axis and the access side end of the contact member 6611 faces the negative direction of the Y axis.

[0109] The movement mechanism 665 moves the base 662 along the X-axis direction, thereby making it possible to move the plurality of substrates W held by the holding member 661 along the X-axis direction.

[0110] Here, the procedure for transport from the inter-batch transport unit 60 to the inter-batch wafer transport unit 70 will be described. First, the moving mechanism 665 moves the transport robot 66 to a delivery position corresponding to the batch processing unit 30c. Next, the opening / closing mechanism 663 moves the holding member 661 to the open position, and the lifter 32 raises the multiple substrates W with IPA attached. As a result, the multiple substrates W are positioned between the two holding members 661. Next, the opening / closing mechanism 663 moves the holding member 661 to the closed position. As a result, the holding member 661 holds the multiple substrates W with IPA attached. Next, the lifter 32 descends to the standby position, and the rotation mechanism 664 rotates the rotation member 6613 by 90 degrees. As a result, the surfaces of the multiple substrates W face the positive direction of the Z axis, and the access side end of the holding member 661 faces the negative direction of the Y axis.

[0111] Then, by transporting the substrate W with IPA attached to the batch inter-substrate transport section 70, the batch inter-substrate transport section 70 can further transport the substrate W in a horizontal position to each single-substrate processing section 50.

[0112] <About the Single-Wafer Processing Section> Fig. 8 is a diagram schematically illustrating an example of the configuration of the single wafer processing unit 50. The single wafer processing unit 50 includes a substrate holding unit 51. The substrate holding unit 51 holds the substrate W in a horizontal position. In the example of Fig. 8, the substrate holding unit 51 includes a stage 511 and a plurality of chuck pins 512. The stage 511 has a disk shape and is provided in the negative direction of the Z axis relative to the substrate W. The stage 511 is provided in an orientation such that its thickness direction is along the Z axis direction.

[0113] The multiple chuck pins 512 are provided on the main surface (i.e., the upper surface) of the stage 511 in the positive direction of the Z axis. Each chuck pin 512 is provided so as to be displaceable between a chucking position in contact with the peripheral edge of the substrate W and a release position away from the peripheral edge of the substrate W. When the multiple chuck pins 512 move to their respective chucking positions, the multiple chuck pins 512 hold the substrate W. When the multiple chuck pins 512 move to their respective release positions, the substrate W is released from its hold.

[0114] In the example of FIG. 8 , the substrate holder 51 further includes a rotation mechanism 513, which rotates the substrate W around a rotation axis Q1. The rotation axis Q1 is an axis that passes through the center of the substrate W and is along the Z-axis direction. For example, the rotation mechanism 513 includes a shaft 514 and a motor 515. The end of the shaft 514 in the positive Z-axis direction (i.e., the upper end) is connected to the main surface of the stage 511 in the negative Z-axis direction (i.e., the lower surface) and extends from the lower surface of the stage 511 along the rotation axis Q1. The motor 515 rotates the shaft 514 around the rotation axis Q1, thereby rotating the stage 511 and the multiple chuck pins 512 together. This causes the substrate W held by the multiple chuck pins 512 to rotate around the rotation axis Q1. Such a substrate holder 51 may also be called a spin chuck.

[0115] The substrate holder 51 rotates the substrate W at high speed around the rotation axis Q1, thereby scattering the liquid adhering to the substrate W from the periphery of the substrate W, and drying the substrate W (so-called spin drying).

[0116] 8, the single wafer processing unit 50 also includes a guard 52. The guard 52 has a cylindrical shape and surrounds the substrate W held by the substrate holder 51. The guard 52 catches liquid splashed from the periphery of the substrate W.

[0117] 8, the single-wafer processing unit 50 also includes a nozzle 53. The nozzle 53 is used to supply pure water, isopropyl alcohol, or the like to the substrate W. The nozzle 53 is movable between a nozzle processing position and a nozzle standby position by a movement mechanism 54. The nozzle processing position is, for example, a position opposite the center of the surface of the substrate W in the Z-axis direction, and the nozzle standby position is, for example, a position radially outward from the substrate W.

[0118] The moving mechanism 54 has, for example, a mechanism such as a ball screw mechanism or an arm rotation mechanism. With the nozzle 53 positioned at the nozzle processing position, pure water, isopropyl alcohol, or the like is discharged onto the rotating substrate W. As a result, the liquid that has landed on the surface of the substrate W is subjected to centrifugal force and spreads over the entire surface of the substrate W, and is then scattered outward from the periphery of the substrate W.

[0119] <About the batch sheet transfer unit> In the example of FIG. 1, the batch inter-wafer transfer section 70 includes a transfer robot 74 and a transfer robot 73.

[0120] The transfer robot 74 is provided so as to be movable in the X-axis direction. The transfer robot 74 is movable to a position facing the batch processing unit 30c. The transfer robot 74 includes a hand 741, and by moving the hand 741, the transfer robot 74 takes out the substrate W in a horizontal position from the transfer robot 66.

[0121] The transfer robot 74 may include multiple hands 741. In this case, the transfer robot 74 may take out multiple substrates W using the hands 741. If the number of hands 741 provided is greater than the number of substrates W held by the transfer robot 66, the transfer robot 74 may take out all of the substrates W held by the transfer robot 66.

[0122] 1, the transfer robot 73 is provided with an intermediary unit 75. The intermediary unit 75 is provided in the negative Y-axis direction relative to the transfer robot 74. The intermediary unit 75 includes a stationary storage container (not shown) that stores a plurality of horizontally oriented substrates W arranged in the Z-axis direction.

[0123] The transfer robot 74 stores the plurality of substrates W in a horizontal position in a storage container of the relay unit 75 .

[0124] The transport robot 73 is provided in the negative direction of the Y axis relative to the relay unit 75. The transport robot 73 includes a hand 731, and by moving the hand 731, sequentially takes out the substrates W from the relay unit 75 and transports the substrates W to each single-wafer processing section 50. The transport robot 73 may include a plurality of hands 731.

[0125] The transport robot 73 is provided so as to be movable along the Y-axis direction, and a plurality of single wafer processing sections 50 are arranged side by side along the Y-axis direction on both sides of the transport path.

[0126] Furthermore, the transport robot 73 sequentially takes out the dried substrates W from the respective single wafer processing units 50 and transports them sequentially to the relay unit 75. As a result, all of the substrates W in the relay unit 75 will eventually be replaced with substrates W that have been dried.

[0127] The transfer robot 74 collectively takes out the plurality of dried substrates W from the relay unit 75, and transfers the plurality of substrates W to the transfer robot 21 via the relay unit 12. Then, the transfer robot 21 transfers the plurality of substrates W to the carrier C1.

[0128] <Interruption cover About the board> 9 is a diagram schematically illustrating an example of the configuration of the transfer robot 66 and its surroundings. As illustrated in FIG. 9, a shielding plate 81 may be provided in the positive direction of the Z axis from the transfer robot 66 and in the negative direction of the Z axis from the fan filter unit 80. The fan filter unit 80 is provided on top of the housing 100, and includes a fan and a filter (for example, a high efficiency particulate air filter (HEPA) filter) for taking in air from within the clean room and sending the air to the single-wafer processing unit 50 and the like within the housing 100.

[0129] The shielding plate 81 is provided at a position facing the plurality of substrates W held by the transport robot 66 in the Z axis direction, and in plan view covers the plurality of substrates W held by the transport robot 66. That is, the outline of the shielding plate 81 in plan view surrounds both the plurality of substrates W immediately before and after the attitude change.

[0130] According to this, the airflow from the fan filter unit 80 is blocked by the shielding plate 81, and it is therefore possible to prevent the airflow from acting on the plurality of substrates W held by the transport robot 66. Therefore, it is possible to prevent the drying of the substrates W caused by the airflow, and it is possible to prevent the collapse of the three-dimensional structure of the substrates W caused by drying.

[0131] The shielding plate 81 may be movable integrally with the transport robot 66. For example, the shielding plate 81 may be attached to the base 662 of the transport robot 66 via a fixing member (not shown). In this way, regardless of the position of the transport robot 66, the shielding plate 81 is positioned directly above the plurality of substrates W held by the transport robot 66, so that it is possible to reliably prevent the airflow from hitting the plurality of substrates W.

[0132] The shielding plate 81 may be fixed so as to be immovable relative to the housing 100 of the substrate processing apparatus 10. In this case, the shielding plate 81 may be provided over the entire movement area of ​​the transfer robot 66.

[0133] In this embodiment, the function of changing the posture is provided in the transport robot 66, but the transport robot 74 may have the function of changing the posture without the transport robot 66 having the function, or a configuration for changing the posture (posture changing unit) may be provided separately. The mechanism for changing the posture in the posture changing unit can be realized by a mechanism similar to the holding member 661 in the transport robot 66, for example.

[0134] When the posture change function is realized by the posture change unit, by positioning the shielding plate 81 above the posture change unit (for example, making it a lid-shaped plate that covers the top of the posture change unit), it is possible to reliably prevent the airflow from hitting multiple substrates W, as described above.

[0135] <Second embodiment> A substrate processing apparatus and a substrate processing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0136] <Configuration of the substrate processing apparatus> 10 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 10A according to the present embodiment. In FIG. 10, the Z-axis direction is the vertically upward direction. The substrate processing apparatus 10A is an apparatus for performing wet processing on substrates W.

[0137] As shown in FIG. 10, the substrate processing apparatus 10A includes a batch processing section 130, a single wafer processing section 50, an inter-batch transfer section 60, and an inter-batch single wafer transfer section .

[0138] 10, a plurality of batch processing units 130 are arranged in a line along the X-axis direction. In addition, in the example of Fig. 10, the plurality of batch processing units 130 include a batch processing unit 130a for chemical liquids and a batch processing unit 130b for both rinsing liquid and IPA.

[0139] The processing tank of the batch processing unit 130a stores a chemical solution. When the substrate processing apparatus 10A etches the sacrificial film 92 of the substrate W, the chemical solution contains an etching solution capable of removing the sacrificial film 92 (for example, phosphoric acid).

[0140] The processing tank of the batch processing unit 130b selectively stores a rinse liquid and IPA. The rinse liquid includes, for example, pure water. By immersing the substrates W after chemical processing in the rinse liquid, the chemical liquid adhering to the substrates W can be replaced with the rinse liquid. Furthermore, after the rinse process, the rinse liquid is appropriately drained and IPA is stored in the processing tank, and by immersing the substrates W in the IPA, the rinse liquid adhering to the substrates W can be replaced with IPA.

[0141] The inter-batch transport section 60 first receives the plurality of substrates W in an upright position from the indexer transport section 20, and transports the received plurality of substrates W to the batch processing section 130a. The plurality of substrates W are collectively chemically processed by the batch processing section 130a.

[0142] Next, the inter-batch transfer section 60 receives the plurality of chemically treated substrates W from the batch processing section 130a, and transfers the received plurality of substrates W to the batch processing section 130b.

[0143] The plurality of substrates W transferred to the batch processing unit 130b are collectively rinsed and then subjected to IPA processing by the batch processing unit 130b, whereby the chemical liquid adhering to each substrate W is replaced with the rinse liquid and then with IPA.

[0144] 10, the batch inter-substrate transfer unit 70 is provided in the negative Y-axis direction relative to the batch processing unit 130b. The batch inter-substrate transfer unit 70 receives the substrates W removed from the batch processing unit 130b by the inter-batch transfer unit 60, and transfers each of the substrates W to the single-substrate processing unit 50 one by one.

[0145] According to the above configuration, there is no need to move the substrate W between the rinsing process and the IPA process, so the transport time of the substrate W can be shortened and drying of the substrate W during transport can be suppressed.

[0146] <Third embodiment> A substrate processing apparatus and a substrate processing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiments will be denoted by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0147] <Configuration of the substrate processing apparatus> 11 is a plan view schematically showing an example of the configuration of a substrate processing apparatus 10B according to the present embodiment. In FIG. 11, the Z-axis direction is the vertically upward direction. The substrate processing apparatus 10B is an apparatus for performing wet processing on substrates W.

[0148] As shown in FIG. 11, the substrate processing apparatus 10B includes a batch processing section 230, a single wafer processing section 50, an inter-batch transfer section 60, and an inter-batch single wafer transfer section .

[0149] In the example of FIG. 11, the batch processing unit 230 is used for chemical liquids, rinse liquids, and IPA.

[0150] The processing tank of the batch processing unit 230 selectively stores a chemical liquid, a rinse liquid, and IPA. When the substrate processing apparatus 10B etches the sacrificial film 92 of the substrate W, the chemical liquid contains an etching liquid (e.g., phosphoric acid) that can remove the sacrificial film 92. The rinse liquid contains, for example, pure water. After the chemical processing, the chemical liquid is appropriately drained and a rinse liquid is stored in the processing tank. By immersing the multiple substrates W in the rinse liquid, the chemical liquid adhering to the multiple substrates W can be replaced with the rinse liquid. Furthermore, after the rinse processing, the rinse liquid is appropriately drained and IPA is stored in the processing tank. By immersing the multiple substrates W in the IPA, the rinse liquid adhering to the multiple substrates W can be replaced with IPA.

[0151] The inter-batch transport section 60 receives the plurality of substrates W in an upright position from the indexer transport section 20, and transports the received plurality of substrates W to the batch processing section 230. The plurality of substrates W are collectively subjected to chemical liquid processing by the batch processing section 230.

[0152] The plurality of substrates W in the batch processing unit 230 are then subjected to a rinsing process all at once, followed by an IPA process, whereby the chemical liquid adhering to each substrate W is replaced with the rinse liquid and then with IPA.

[0153] 11, the batch inter-substrate transfer section 70 is provided in the negative direction of the Y axis relative to the batch processing section 230. The batch inter-substrate transfer section 70 receives the plurality of substrates W removed from the batch processing section 230 by the inter-batch transfer section 60, and transfers each of the substrates W to the single-substrate processing section 50 one by one.

[0154] According to the above configuration, there is no need to move the substrate W between the chemical treatment, rinse treatment, and IPA treatment, so the transport time of the substrate W can be shortened and drying of the substrate W during transport can be suppressed.

[0155] <Effects of the above-described embodiments> Next, examples of effects obtained by the above-described embodiments will be described. Note that in the following description, the effects will be described based on the specific configurations exemplified in the above-described embodiments, but these may be replaced with other specific configurations exemplified in the present specification as long as the same effects are obtained. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0156] Furthermore, the replacement may be made across multiple embodiments, i.e., configurations illustrated in different embodiments may be combined to produce the same effect.

[0157] According to the embodiment described above, the substrate processing method includes the steps of immersing a plurality of substrates W in a chemical solution in the batch processing unit 30, cleaning the substrates W after immersion in the chemical solution with a rinse solution in the batch processing unit 30, replacing at least a portion of the rinse solution on the substrates W with IPA in the batch processing unit 30, moving the substrates W after the rinse solution has been replaced with IPA to the single-wafer processing unit 50, and drying the substrates W in the single-wafer processing unit 50.

[0158] According to this configuration, when the substrate W is moved from the batch processing unit 30 to the single-wafer processing unit 50, the rinse liquid on the substrate W is replaced with IPA, and therefore drying of the surface of the substrate W is suppressed during the movement. Therefore, whether the substrate W is hydrophilic or hydrophobic, damage (collapse) of the pattern formed on the surface of the substrate W can be suppressed during the movement. Furthermore, since the surface tension of IPA is smaller than that of water, even if the position of the liquid surface of IPA applied to the surface of the substrate W fluctuates, the effect of the force (surface tension) on the pattern formed on the surface of the substrate W is smaller than that of water. Therefore, damage to the pattern formed on the surface of the substrate W can be suppressed more effectively than when water is applied to the substrate W during the movement of the substrate W from the batch processing unit 30 to the single-wafer processing unit 50.

[0159] Unless otherwise specified, the order in which the processes are performed can be changed.

[0160] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0161] In the above-described embodiment, the IPA includes diluted IPA. With this configuration, even if the used IPA has been diluted in the process of replacing the rinse liquid with IPA, the IPA can be reused in the process of replacing the rinse liquid with IPA as long as the concentration of the IPA does not fall below a predetermined value.

[0162] Furthermore, according to the embodiment described above, the step of replacing the rinse liquid on the substrate W with IPA is a step of spraying atomized IPA onto the substrate W. With this configuration, the rinse liquid on the substrate W can be replaced with IPA by a highly flexible method that is not limited to immersing the substrate W in IPA.

[0163] Furthermore, according to the embodiment described above, the substrate processing method includes a step of changing the orientation of the substrate W after the rinsing liquid has been replaced with IPA from a vertical orientation to a horizontal orientation. With this configuration, the orientation of the substrate W is changed from the vertical orientation in which the substrate W is processed in the batch processing unit 30 to the horizontal orientation in which the substrate W is processed in the single-wafer processing unit 50, which lengthens the time it takes to move from the batch processing unit 30 to the single-wafer processing unit 50. However, since the rinsing liquid on the substrate W remains replaced with IPA even during this movement, drying of the surface of the substrate W during this movement is effectively suppressed.

[0164] Furthermore, according to the embodiment described above, the substrate processing method includes a step of replacing the rinse liquid on the substrate W with IPA in the single wafer processing unit 50 before the step of drying the substrate W. With this configuration, even if the process of replacing the rinse liquid with IPA in the batch processing unit 30 is insufficient (i.e., if unsubstituted chemical liquid or rinse liquid remains), the process of replacing the rinse liquid with IPA can be performed again before the drying process in the single wafer processing unit 50, thereby enabling a rapid and appropriate drying process.

[0165] Furthermore, according to the embodiment described above, the substrate W after immersion in the chemical solution is a layered substrate having a three-dimensional surface pattern. With such a configuration, the aspect ratio of the pattern formed on the surface of the substrate W becomes large, making the substrate W more susceptible to damage due to drying. However, when the substrate W is moved from the batch processing unit 30 to the single-wafer processing unit 50, the rinse liquid on the substrate W is replaced with IPA, thereby suppressing drying on the surface of the substrate W. As a result, damage due to drying is effectively suppressed.

[0166] Furthermore, according to the embodiment described above, the step of replacing the rinse liquid on the substrate W with IPA can be selected to be performed when the substrate W is hydrophobic, and not to be performed when the substrate W is hydrophilic. Furthermore, the step of moving the substrate W to the single wafer processing unit 50 is a step of moving the substrate W to the single wafer processing unit 50 after being cleaned with the rinse liquid, when the substrate W is hydrophilic. With this configuration, the liquid to be applied to the substrate W when the substrate W is moved from the batch processing unit 30 to the single wafer processing unit 50 can be selected depending on the properties of the substrate W.

[0167] According to the embodiment described above, the substrate processing apparatus includes a batch processing unit 30 that processes multiple substrates W, a single-wafer processing unit 50 that processes a single substrate W, and a transfer unit that transfers the substrate W from the batch processing unit 30 to the single-wafer processing unit 50. Here, the transfer unit corresponds to, for example, the batch single-wafer transfer unit 70. The batch processing unit 30 includes an immersion unit that immerses multiple substrates W in a chemical solution, a liquid cleaning unit that cleans the substrates W after immersion in the chemical solution with a rinse solution, and a replacement unit that replaces the rinse solution in the substrates W with IPA. Here, the immersion unit, the liquid cleaning unit, and the replacement unit correspond to, for example, the processing baths 31 in the batch processing units 30a, 30b, and 30c, respectively. The batch single-wafer transfer unit 70 transfers the substrates W after the rinse solution has been replaced with IPA to the single-wafer processing unit 50. The single-wafer processing unit 50 also includes a drying unit that dries the substrates W transferred from the batch processing unit 30. Here, the drying unit corresponds to, for example, the substrate holding unit 51 that holds and rotates the substrate W.

[0168] According to this configuration, when the substrate W is moved from the batch processing unit 30 to the single-wafer processing unit 50, the rinse liquid on the substrate W is replaced with IPA, and therefore drying of the surface of the substrate W is suppressed during the movement. Therefore, whether the substrate W is hydrophilic or hydrophobic, damage (collapse) of the pattern formed on the surface of the substrate W can be suppressed during the movement. Furthermore, since the surface tension of IPA is smaller than that of water, even if the position of the liquid surface of IPA applied to the surface of the substrate W fluctuates, the effect of the force (surface tension) on the pattern formed on the surface of the substrate W is smaller than that of water. Therefore, damage to the pattern formed on the surface of the substrate W can be suppressed more effectively than when water is applied to the substrate W during the movement of the substrate W from the batch processing unit 30 to the single-wafer processing unit 50.

[0169] Furthermore, even if other configurations shown as examples in this specification are appropriately added to the above configuration, that is, even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be achieved.

[0170] <Modifications of the above-described embodiments> In the embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may also be described, but these are merely examples in all aspects and are not limiting.

[0171] Therefore, countless modifications and equivalents not shown as examples are contemplated within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component in at least one embodiment and combining it with a component in another embodiment.

[0172] Furthermore, in the embodiments described above, when a material name is mentioned without any particular specification, it is assumed that the material may contain other additives, such as an alloy, unless a contradiction arises. [Explanation of symbols]

[0173] 10, 10A, 10B Substrate processing equipment 11 Loading Port 12,75 Relay unit 20 Indexer transport section 21,65,66,73,74 Transport robot 30, 30a, 30b, 30c, 130, 130a, 130b, 230, 330 Batch processing unit 31 Treatment tank 32 Lifter 33,611,661 Retaining member 34,662 bases 35 Lifting mechanism 41 Bat 43 Opening and closing member 44,53 nozzle 44a Discharge port 45 Discharge section 46 Relative displacement mechanism 50 Single-Wafer Processing Unit 51 Board holding part 52 Guard 54,665 Moving mechanism 60 Batch transfer section 70 Batch sheet-to-sheet transfer section 80 Fan filter unit 81 Shielding plate 90 Laminated structure 91 Insulating film 92 Sacrificial film 93 Support layer 94 Trench 100 cabinets 211,731,741 hands 212 Standing support member 441 Supply pipe 442 Valve 511 Stage 512 zipper pin 513,664 Rotating mechanism 514 Shaft 515 Motor 613,663 Opening and closing mechanism 6611 Contact member 6612 Support member 6613 Rotating members

Claims

1. A substrate processing method using a batch processing unit that processes a plurality of substrates and a single substrate processing unit that processes a single substrate, immersing a plurality of the substrates in a chemical solution in the batch processing unit; in the batch processing unit, cleaning the substrate after immersion in the chemical solution with a rinse solution; replacing a portion of the rinse liquid on the substrate with IPA in the batch processing unit; moving the substrate after the rinsing liquid has been replaced with the IPA to the single wafer processing unit; drying the substrate in the single wafer processing section; and replacing the rinse liquid on the substrate with the IPA in the single wafer processing section before the step of drying the substrate. Substrate processing method.

2. 2. The substrate processing method according to claim 1, The IPA includes diluted IPA. Substrate processing method.

3. 3. The substrate processing method according to claim 1, the step of replacing the rinse liquid on the substrate with the IPA is a step of spraying the IPA in atomized form onto the substrate; Substrate processing method.

4. 4. A substrate processing method according to claim 1, The method further includes a step of changing the orientation of the substrate from a vertical orientation to a horizontal orientation after the rinsing liquid is replaced with the IPA. Substrate processing method.

5. 5. A substrate processing method according to claim 1, The substrate after immersed in the chemical solution is a laminated substrate having a three-dimensional surface pattern. Substrate processing method.

6. 6. A substrate processing method according to claim 1, the step of replacing the rinse liquid on the substrate with IPA can be selected to be performed when the substrate is hydrophobic and not to be performed when the substrate is hydrophilic; When the substrate is hydrophilic, the step of transferring the substrate to the single-wafer processing section is a step of transferring the substrate after being cleaned with the rinse liquid to the single-wafer processing section. Substrate processing method.

7. a batch processing unit that processes a plurality of substrates; a single-substrate processing section for processing one substrate; a transfer unit that transfers the substrate from the batch processing unit to the single wafer processing unit, The batch processing unit an immersion unit for immersing the plurality of substrates in a chemical solution; a liquid cleaning unit that cleans the substrate with a rinse liquid after immersion in the chemical solution; a replacement unit that replaces a portion of the rinse liquid on the substrate with IPA, the transfer unit transfers the substrate after the rinsing liquid has been replaced with the IPA to the single wafer processing unit; The single wafer processing section includes: a drying section that dries the substrates transferred from the batch processing section; a nozzle for replacing the rinse liquid on the substrate with the IPA before drying the substrate transferred from the batch processing unit. Substrate processing equipment.

Images