SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND SUBSTRATE PROCESSING PROGRAM

Abstract

A substrate processing device that processes a substrate, comprising: a retaining / rotating part that retains and rotates the substrate; a supply unit including at least one gas nozzle that supplies an inert gas to the substrate after a developing solution is supplied thereto, and at least one rinse nozzle that supplies a rinse solution to the substrate at a discharge position that is provided closer to the outer peripheral side than the position where gas is supplied by the gas nozzle; and a control unit, the control unit causing the discharge position of the rinse solution from the rinse nozzle to move from the center of the substrate toward the outer periphery of the substrate while maintaining the discharging of the inert gas from the gas nozzle, thereby causing a gas / liquid interface formed by the inert gas and the rinse solution to move from the center toward the outer periphery, and switching the direction of the rinse solution discharged from the rinse nozzle from a direction that follows the rotation direction of the substrate to a direction that follows the radial direction of the substrate when moving the rinse nozzle from the center of the substrate toward the outer periphery thereof.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a substrate processing program. [Background technology]

[0002] Patent Document 1 discloses a configuration in which, when cleaning the surface of a substrate by ejecting a cleaning liquid and nitrogen gas onto the surface, the nozzle is moved so as to reduce the difference between the distance from the ejection position of the cleaning liquid nozzle to the center of the substrate and the distance from the ejection position of the gas nozzle to the center of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-008273 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce residues on a substrate surface after the substrate is cleaned. [Means for solving the problem]

[0005] A substrate processing apparatus according to one embodiment of the present disclosure is a substrate processing apparatus for processing a substrate, and includes: a holding and rotation unit that holds and rotates the substrate; a supply unit including at least one gas nozzle that supplies an inert gas to the substrate after a developing solution has been supplied; and at least one rinse nozzle that supplies a rinse liquid to the substrate at a discharge position located on the outer periphery of the substrate relative to a gas supply position by the gas nozzle; and a control unit, wherein the control unit continues to discharge the inert gas from the gas nozzle while moving the discharge position of the rinse liquid from the rinse nozzle from the center of the substrate toward the outer periphery, thereby moving the gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery, and when the rinse nozzle moves toward the outer periphery, the direction of the rinse liquid discharged from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate when moving from the center toward the outer periphery of the substrate. [Effects of the Invention]

[0006] According to the present disclosure, a technique is provided that can reduce residues on a substrate surface after the substrate is cleaned. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic diagram showing an example of a substrate processing system. [Figure 2] FIG. 2 is a schematic diagram showing an example of a coating and developing apparatus. [Figure 3] FIG. 3 is a schematic diagram showing an example of a development unit. [Figure 4] 4(a) to 4(c) are schematic diagrams showing examples of the arrangement of gas nozzles and rinse nozzles of the developing units. [Figure 5] FIG. 5 is a block diagram illustrating an example of a hardware configuration of the control device. [Figure 6] FIG. 6 is a flow chart showing an example of a substrate processing procedure. [Figure 7] FIG. 7 is a flow chart showing an example of a procedure for removing the rinse liquid. [Figure 8] 8(a) to 8(d) are schematic diagrams showing an example of a procedure for removing the rinse liquid. [Figure 9] FIG. 9 is a flow chart showing an example of a procedure for removing the rinse liquid. [Figure 10] 10(a) to 10(d) are schematic diagrams showing an example of a procedure for removing the rinse liquid. [Figure 11] FIG. 11 is a flow chart showing an example of a procedure for removing the rinse liquid. [Figure 12] 12(a) to 12(d) are schematic diagrams showing an example of a procedure for removing the rinse liquid. DETAILED DESCRIPTION OF THE INVENTION

[0008] Various exemplary embodiments are described below.

[0009] A substrate processing apparatus according to one embodiment of the present disclosure is a substrate processing apparatus for processing a substrate, and includes: a holding and rotation unit that holds and rotates the substrate; a supply unit including at least one gas nozzle that supplies an inert gas to the substrate after a developing solution has been supplied; and at least one rinse nozzle that supplies a rinse liquid to the substrate at a discharge position located on the outer periphery of the substrate relative to a gas supply position by the gas nozzle; and a control unit, wherein the control unit continues to discharge the inert gas from the gas nozzle while moving the discharge position of the rinse liquid from the rinse nozzle from the center of the substrate toward the outer periphery, thereby moving the gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery, and when the rinse nozzle moves from the center side to the outer periphery of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate.

[0010] In the above-described substrate processing apparatus, after the developer has been supplied to the substrate, the inert gas is continuously discharged from the gas nozzle while the discharge position of the rinse liquid from the rinse nozzle is moved from the center of the substrate toward the periphery, thereby moving the gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the periphery. During this process, as the rinse nozzle moves from the center toward the periphery of the substrate, the direction of the rinse liquid discharged from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate. At the center of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is aligned with the rotation direction of the substrate when forming the gas-liquid interface, thereby suppressing the generation of residue after removal of the rinse liquid. Meanwhile, at the periphery of the substrate, the discharge direction of the rinse liquid from the rinse nozzle is aligned with the radial direction of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, by switching the discharge direction of the rinse liquid as described above when moving the gas-liquid interface toward the periphery, residue on the substrate surface after cleaning can be reduced.

[0011] The supply unit may have a first arm provided with a first rinse nozzle and a first gas nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle, wherein the direction of the rinse liquid ejected from the first rinse nozzle is along a rotation direction of the substrate, and the direction of the rinse liquid ejected from the second rinse nozzle is along a radial direction of the substrate, and the control unit may switch from a first state in which the gas-liquid interface is formed by supplying the inert gas and the rinse liquid while moving the first arm closer to the center of the substrate than a predetermined switching position, to a second state in which the gas-liquid interface is formed by supplying the inert gas and the rinse liquid while moving the second arm closer to the outer periphery of the substrate than the switching position.

[0012] With the above configuration, the generation of residue after removal of the rinse liquid is suppressed by supplying an inert gas and the rinse liquid from the first arm, whose first rinse nozzle ejects the rinse liquid in the direction along the substrate rotation direction, to form a gas-liquid interface near the center of the substrate. Meanwhile, the generation of residue after removal of the rinse liquid is suppressed by supplying an inert gas and the rinse liquid from the second arm, whose second rinse nozzle ejects the rinse liquid in the direction along the substrate's radial direction, to form a gas-liquid interface near the outer periphery of the substrate. Therefore, with the above configuration, it is possible to reduce residue on the substrate surface after cleaning the substrate.

[0013] In the first state, the control unit may also cause the second rinse nozzle to eject the rinse liquid, and in the second state, may stop ejection of the rinse liquid from the first rinse nozzle and increase the amount of the rinse liquid ejected from the second rinse nozzle compared to the first state.

[0014] With the above configuration, in the first state, the movement of the rinse liquid from near the center of the substrate toward the periphery is promoted by discharging the rinse liquid from the second rinse nozzle as well, whereas in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, and the discharge rate of the rinse liquid from the second rinse nozzle is increased to promote the movement of the rinse liquid toward the periphery.

[0015] In the second state, the control unit may stop the discharge of the gas from the first gas nozzle.

[0016] With the above configuration, the flow of gas on the substrate surface in the second state is stabilized, and disturbance of the gas-liquid interface can be prevented.

[0017] In an embodiment, the distance between the position at which the rinse liquid is ejected from the first rinse nozzle on the first arm and the position at which the gas is ejected from the first gas nozzle is smaller than the distance between the position at which the rinse liquid is ejected from the second rinse nozzle on the second arm and the position at which the gas is ejected from the second gas nozzle.

[0018] When forming an air-liquid interface on the substrate, residue can be reduced by having the rinse liquid and gas ejection positions close to each other near the center of the substrate, and by having the rinse liquid and gas ejection positions farther apart near the periphery of the substrate. As described above, by arranging the nozzles so that the ejection positions are close to each other on the first arm and so that the ejection positions are far apart on the second arm, residue after cleaning can be further reduced.

[0019] In one embodiment, the supply unit includes a gas nozzle, a first rinse nozzle, and a second rinse nozzle mounted on an arm that is movable independently of one another, the direction of the rinse liquid ejected from the first rinse nozzle is along a rotation direction of the substrate, and the direction of the rinse liquid ejected from the second rinse nozzle is along a radial direction of the substrate, and the control unit switches from a first state in which the gas-liquid interface is formed by supplying the rinse liquid from the first rinse nozzle closer to the center of the substrate than a predetermined switching position to a second state in which the gas-liquid interface is formed by supplying the rinse liquid from the second rinse nozzle closer to the outer periphery of the substrate than the switching position, and moves the gas nozzle in the outer periphery direction in response to the movement of the rinse nozzle in the outer periphery direction in the first state and the second state.

[0020] With the above configuration, the rinse liquid is supplied from the first rinse nozzle, which discharges the rinse liquid in the direction parallel to the rotational direction of the substrate, forming a gas-liquid interface near the center of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. On the other hand, the rinse liquid is supplied from the second rinse nozzle, which discharges the rinse liquid in the radial direction of the substrate, forming a gas-liquid interface near the outer periphery of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, with the above configuration, it is possible to reduce residue on the substrate surface after cleaning the substrate.

[0021] In the first state, the control unit may also cause the second rinse nozzle to eject the rinse liquid, and in the second state, may stop ejection of the rinse liquid from the first rinse nozzle and increase the amount of the rinse liquid ejected from the second rinse nozzle compared to the first state.

[0022] With the above configuration, in the first state, the movement of the rinse liquid from near the center of the substrate toward the periphery is promoted by discharging the rinse liquid from the second rinse nozzle as well, whereas in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, and the discharge rate of the rinse liquid from the second rinse nozzle is increased to promote the movement of the rinse liquid toward the periphery.

[0023] In the first state, the distance on the substrate between the position where the rinse liquid is discharged from the first rinse nozzle and the position where the gas is discharged from the gas nozzle may be smaller than the distance on the substrate between the position where the rinse liquid is discharged from the second rinse nozzle and the position where the gas is discharged from the gas nozzle in the second state.

[0024] When forming a gas-liquid interface on the substrate, residue can be reduced by discharging the rinse liquid and the gas closer to each other near the center of the substrate, whereas residue can be reduced by discharging the rinse liquid and the gas farther apart near the periphery of the substrate. As described above, by arranging the nozzle so that the discharge positions of the gas liquid and the rinse liquid are close to each other in the first state and discharging the gas and rinse liquid farther apart in the second state, residue after cleaning can be further reduced.

[0025] The supply unit may include a first gas nozzle whose discharge position is fixed at the center of the substrate, a first arm provided with a first rinse nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle, wherein the direction of the rinse liquid discharged from the first rinse nozzle is a direction along a rotation direction of the substrate and the direction of the rinse liquid discharged from the second rinse nozzle is a direction along a radial direction of the substrate, and the control unit may switch from a first state in which the gas-liquid interface is formed by supplying the rinse liquid from the first rinse nozzle while moving the first arm and supplying the inert gas from the first gas nozzle closer to the center of the substrate than a predetermined switching position, to a second state in which the gas-liquid interface is formed by supplying the inert gas and the rinse liquid while moving the second arm, on the outer periphery of the substrate than the switching position.

[0026] With the above configuration, the rinse liquid is supplied from the first rinse nozzle, whose discharge direction is along the rotation direction of the substrate, toward the center of the substrate, and a gas-liquid interface is formed with the first gas nozzle, whose discharge position is fixed at the center of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. Meanwhile, on the outer periphery of the substrate, an inert gas and rinse liquid are supplied from the second arm, whose discharge direction of the rinse liquid from the second rinse nozzle is along the radial direction of the substrate, thereby forming a gas-liquid interface, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, with the above configuration, it is possible to reduce residue on the substrate surface after cleaning the substrate.

[0027] In the first state, the control unit may also cause the second rinse nozzle to eject the rinse liquid, and in the second state, may stop ejection of the rinse liquid from the first rinse nozzle and increase the amount of the rinse liquid ejected from the second rinse nozzle compared to the first state.

[0028] With the above configuration, in the first state, the movement of the rinse liquid from near the center of the substrate toward the periphery is promoted by discharging the rinse liquid from the second rinse nozzle as well, whereas in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, and the discharge rate of the rinse liquid from the second rinse nozzle is increased to promote the movement of the rinse liquid toward the periphery.

[0029] In the first state, the distance on the substrate between the position where the rinse liquid is discharged from the first rinse nozzle and the position where the gas is discharged from the gas nozzle may be smaller than the distance on the substrate between the position where the rinse liquid is discharged from the second rinse nozzle and the position where the gas is discharged from the second gas nozzle in the second state.

[0030] When forming a gas-liquid interface on the substrate, residue can be reduced by discharging the rinse liquid and the gas closer to each other near the center of the substrate, whereas residue can be reduced by discharging the rinse liquid and the gas farther apart near the periphery of the substrate. As described above, by arranging the nozzle so that the discharge positions of the gas liquid and the rinse liquid are close to each other in the first state and discharging the gas and rinse liquid farther apart in the second state, residue after cleaning can be further reduced.

[0031] The supply unit may include a first gas nozzle whose discharge position is fixed at the center of the substrate, and a first arm provided with a first rinse nozzle capable of changing the direction of the rinse liquid discharged, and the control unit may be configured to gradually change the direction of the rinse liquid discharged from the first rinse nozzle from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate when the first rinse nozzle moves in the outer circumferential direction.

[0032] With the above configuration, the rinse liquid is supplied to the center of the substrate with the direction of discharge from the rinse nozzle aligned with the direction of rotation of the substrate, thereby forming a gas-liquid interface, thereby suppressing the generation of residue after removal of the rinse liquid. On the other hand, the rinse liquid is supplied to the outer periphery of the substrate with the direction of discharge from the rinse nozzle aligned with the radial direction of the substrate, thereby forming a gas-liquid interface, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, with the above configuration, it is possible to reduce residue on the substrate surface after cleaning the substrate.

[0033] A substrate processing method according to one embodiment of the present disclosure is a substrate processing method for processing a substrate, the method including: holding and rotating the substrate in a holding and rotating unit; and, while continuing to eject an inert gas from a gas nozzle onto the substrate after the developer has been supplied, moving a position of ejection of the rinse liquid from a rinse nozzle, which supplies a rinse liquid to the substrate at a ejection position located outer circumferentially of the gas supply position of the gas nozzle, from the center of the substrate toward the outer circumferential direction, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer circumferential direction, wherein, during the moving, when the rinse nozzle is moved from the center toward the outer circumferential direction of the substrate, a direction of the rinse liquid ejected from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate.

[0034] In the above substrate processing method, when the rinse nozzle moves from the center side to the outer periphery side of the substrate, the direction of the rinse liquid ejected from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate. At the center side of the substrate, when forming a gas-liquid interface, the ejection direction of the rinse liquid from the rinse nozzle is a direction along the rotation direction of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. On the other hand, at the outer periphery side of the substrate, the ejection direction of the rinse liquid from the rinse nozzle is a direction along the radial direction of the substrate, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, by switching the ejection direction of the rinse liquid as described above when moving the gas-liquid interface toward the outer periphery, it is possible to reduce residue on the substrate surface after cleaning the substrate.

[0035] A substrate processing program according to one embodiment of the present disclosure is a substrate processing program that causes a computer to execute substrate processing, the program causing the computer to hold and rotate the substrate in a holding and rotating unit, and while continuing to eject an inert gas from a gas nozzle onto the substrate after the developer has been supplied, move a position of ejection of the rinse liquid from a rinse nozzle that supplies the rinse liquid to the substrate at a ejection position that is located on the outer periphery of the gas nozzle from the center of the substrate toward the outer periphery, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery, and during the moving, when the rinse nozzle moves from the center side to the outer periphery of the substrate, a direction of the rinse liquid ejected from the rinse nozzle is switched from a direction along the rotation direction of the substrate to a direction along the radial direction of the substrate.

[0036] According to the substrate processing program, like the substrate processing method, residues on the substrate surface after cleaning the substrate can be reduced.

[0037] Illustrative Embodiments Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0038] [Substrate processing system] The substrate processing system 1 (substrate processing apparatus) shown in FIG. 1 is a system that forms a photosensitive coating on a workpiece W, exposes the photosensitive coating, and develops the photosensitive coating. The workpiece W to be processed is, for example, a substrate, or a substrate on which a film, circuit, or the like has been formed by performing a predetermined process. One example of the substrate is a silicon wafer. The workpiece W (substrate) may be circular. The workpiece W may also be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like. The photosensitive coating is, for example, a resist film.

[0039] As shown in FIGS. 1 and 2, the substrate processing system 1 includes a coating and developing apparatus 2, an exposure apparatus 3, and a control device 100. The exposure apparatus 3 exposes a resist film (photosensitive coating) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates an exposure target portion of the resist film with energy rays using a method such as immersion exposure. The energy rays are, for example, ionizing radiation or non-ionizing radiation. Ionizing radiation is radiation having sufficient energy to ionize atoms or molecules. Ionizing radiation may be extreme ultraviolet (EUV), electron beams, ion beams, X-rays, α-rays, β-rays, γ-rays, heavy particle beams, or proton beams. Non-ionizing radiation is radiation that does not have sufficient energy to ionize atoms or molecules. Non-ionizing radiation may be g-rays, i-rays, KrF excimer lasers, ArF excimer lasers, F2 excimer lasers, or the like.

[0040] The coating and developing apparatus 2 performs a process of forming a resist film by applying a resist (chemical solution) to the surface of the workpiece W before the exposure process by the exposure apparatus 3. The coating and developing apparatus 2 also develops the resist film formed on the workpiece W after the exposure process.

[0041] The coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6.

[0042] The carrier block 4 introduces the workpiece W into the coating and developing apparatus 2 and removes the workpiece W from the coating and developing apparatus 2. The carrier block 4 can support, for example, a plurality of carriers C for the workpiece W and has a built-in transport device A1 including a transfer arm. The carrier C accommodates, for example, a plurality of circular workpieces W. The transport device A1 removes the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it to the carrier C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0043] The processing module 11 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 11 forms an underlayer film on the surface of the workpiece W using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming the underlayer film onto the workpiece W. The heat processing unit U2 performs various heat treatments associated with the formation of the underlayer film.

[0044] The processing module 12 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 12 forms a resist film on the underlying film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming a resist film onto the underlying film. The liquid processing unit U1 applies a chemical liquid that can form a pattern by exposure to energy rays (e.g., i-rays) as the processing liquid for forming a resist film onto the underlying film. The heat processing unit U2 performs various heat treatments associated with the formation of the resist film.

[0045] The processing module 13 incorporates a liquid processing unit U1, a heat processing unit U2, and a transport device A3 that transports the workpiece W to these units. The processing module 13 forms an upper layer film on the resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 applies a processing liquid for forming the upper layer film onto the resist film. The heat processing unit U2 performs various heat treatments associated with the formation of the upper layer film.

[0046] The processing module 14 incorporates a developing unit U3, a thermal processing unit U4, a measurement unit U5, and a transport device A3 that transports the workpiece W to these units. The processing module 14 uses the developing unit U3 and the thermal processing unit U4 to develop the resist film that has been exposed and to perform thermal processing associated with the development. The developing unit U3 is a unit that performs liquid processing on the workpiece W using a developer. The developing unit U3 supplies the developer onto the surface of the exposed workpiece W, forming a liquid film (puddle) of the developer on the surface of the workpiece W. The developing unit U3 develops the resist film by maintaining the liquid film of the developer on the surface of the workpiece W (e.g., static development). Furthermore, after developing with the developer, the developing unit U3 rinses the developer from the surface of the workpiece W with a rinse liquid to remove any rinse liquid remaining on the surface of the workpiece W.

[0047] The thermal processing unit U4 performs various thermal processes associated with development, including a post-exposure bake (PEB) before development and a post-exposure bake (PB) after development.

[0048] A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into multiple cells lined up in the vertical direction. A transport device A7 including a lifting arm is provided near the shelf unit U10. The transport device A7 raises and lowers the workpiece W between the cells of the shelf unit U10. A shelf unit U11 is provided on the interface block 6 side within the processing block 5. The shelf unit U11 is divided into multiple cells lined up in the vertical direction.

[0049] The interface block 6 transfers the workpiece W to and from the exposure apparatus 3. The interface block 6 incorporates, for example, a transport device A8 including a transfer arm, and is connected to the exposure apparatus 3. The transport device A8 transfers the workpiece W placed on the shelf unit U11 to the exposure apparatus 3. The transport device A8 receives the workpiece W from the exposure apparatus 3 and returns it to the shelf unit U11.

[0050] The control device 100 (control unit) is configured to partially and entirely control the coating and developing apparatus 2. The control device 100 controls the coating and developing apparatus 2 to perform coating and developing processing, for example, in the following procedure. First, the control device 100 controls the transport device A1 to transport the workpiece W in the carrier C to the shelf unit U10, and then controls the transport device A7 to place the workpiece W in a cell for the processing module 11.

[0051] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 11. The control device 100 also controls the liquid processing unit U1 and the heat processing unit U2 to form an underlayer film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W on which the underlayer film has been formed to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 12.

[0052] Next, the control device 100 controls the transport device A3 to transport the workpiece W from the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 12. The control device 100 also controls the liquid processing unit U1 and the heat processing unit U2 to form a resist film on the surface of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport device A7 to place the workpiece W in a cell for the processing module 13.

[0053] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U10 to each unit in the processing module 13. The control device 100 also controls the liquid processing unit U1 and the heat processing unit U2 to form an upper layer film on the resist film of the workpiece W. Thereafter, the control device 100 controls the transport device A3 to transport the workpiece W to the shelf unit U11.

[0054] Next, the control device 100 controls the transport device A8 to send the workpiece W on the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 controls the transport device A8 to receive the workpiece W that has been subjected to exposure processing using energy rays (e.g., i-rays) from the exposure device 3 and place it in a cell for the processing module 14 in the shelf unit U11.

[0055] Next, the control device 100 controls the transport device A3 to transport the workpiece W on the shelf unit U11 to each unit in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to develop the resist film on the workpiece W. As the resist film is developed, a resist pattern is formed on the surface of the workpiece W.

[0056] Thereafter, the control device 100 controls the transport device A3 to return the workpiece W to the shelf unit U10, and controls the transport device A7 and the transport device A1 to return the workpiece W into the carrier C. This completes the coating and developing process for one workpiece W. The control device 100 causes the coating and developing device 2 to perform the coating and developing process for each of the subsequent multiple workpieces W in the same manner as described above.

[0057] An input / output device may be connected to the control device 100. The input / output device is a device for inputting input information indicating instructions from a user such as an operator to the control device 100 and outputting information from the control device 100 to the user. The input / output device may include a keyboard, an operation panel, or a mouse as an input device, and may include a monitor (e.g., a liquid crystal display) as an output device.

[0058] The specific configuration of the substrate processing apparatus is not limited to the above-described configuration of the substrate processing system 1. The substrate processing apparatus may be any type as long as it includes a developing unit that develops a substrate on which a resist film has been formed, and a control device that can control the developing unit.

[0059] (developing unit) 3 and 4, the developing unit U3 of the processing module 14 will be described in detail. As shown in Fig. 3, the developing unit U3 has, for example, a housing H, a holding and rotating unit 20, a developer supply unit 30, a rinsing liquid supply unit 40 (supply unit), a gas supply unit 50 (supply unit), a cover member 70, and a blower B. The housing H houses the holding and rotating unit 20, the developer supply unit 30, the rinsing liquid supply unit 40, the gas supply unit 50, the cover member 70, and the blower B.

[0060] The holding and rotating unit 20 (holding unit) holds and rotates the workpiece W. The holding and rotating unit 20 can hold the workpiece W without rotating it, and can hold the workpiece W while rotating it. The holding and rotating unit 20 includes, for example, a rotation drive unit 22, a shaft 24, and a holding unit 26. The rotation drive unit 22 operates based on an operation instruction from the control device 100, and rotates the shaft 24. The rotation drive unit 22 includes, for example, a power source such as an electric motor.

[0061] The holding unit 26 is provided at the tip of the shaft 24. The workpiece W is placed on the holding unit 26. The holding unit 26 holds the workpiece W in a substantially horizontal position, for example by suction. The holding and rotating unit 20 rotates the workpiece W around an axis (rotation axis) perpendicular to the surface Wa of the workpiece W while the workpiece W is in a substantially horizontal position. The holding unit 26 may hold the workpiece W so that the rotation axis substantially coincides with the center CP of the workpiece W (see FIG. 4(a)).

[0062] The developer supply unit 30 supplies developer L1 to the surface Wa of the workpiece W held by the holding / rotating unit 20 (holding unit 26). The developer L1 is a chemical liquid for developing a resist film (hereinafter referred to as "resist film R") formed on the surface Wa of the workpiece W. In the present disclosure, supplying a fluid such as a liquid or gas (e.g., developer L1) to the surface Wa of the workpiece W corresponds to bringing the fluid into contact with a film such as a resist film R or a liquid film formed on the surface Wa.

[0063] The developer supply unit 30 includes, for example, a liquid supply unit 32, a drive unit 34, and a developing nozzle 36. The liquid supply unit 32 sends the developer L1 stored in a container (not shown) to the developing nozzle 36 using a pump or the like (not shown) based on an operational instruction from the control device 100. The drive unit 34 moves the developing nozzle 36 in a direction (horizontal direction) along at least the surface Wa of the workpiece W based on an operational instruction from the control device 100. The developing nozzle 36 is supported by an arm or the like (not shown). The drive unit 34 moves the developing nozzle 36 by moving the arm.

[0064] The developing nozzle 36 ejects the developer L1 supplied from the liquid delivery unit 32 toward the surface Wa of the workpiece W. When the developer L1 is ejected from the developing nozzle 36, for example, toward the center of the workpiece W while the workpiece W is rotating, the developer L1 spreads over the surface Wa of the workpiece W by utilizing centrifugal force, and the developer L1 is supplied so as to cover the entire surface Wa of the workpiece W. Note that the developing nozzle 36 may be configured to eject the developer L1 while moving, for example, from the center of the workpiece W toward the periphery.

[0065] The rinse liquid supply unit 40 supplies a rinse liquid L2 to the peripheral region of the surface Wa of the workpiece W held by the holding rotation unit 20 (holding unit 26). Water (e.g., pure water) is used as the rinse liquid L2. The rinse liquid supply unit 40 includes a first rinse liquid supply unit 40A and a second rinse liquid supply unit 40B.

[0066] The first rinse liquid supply unit 40A includes, for example, a liquid supply unit 42A, a drive unit 44A, and a rinse nozzle 46A. Based on an operational instruction from the control device 100, the liquid supply unit 42A sends the rinse liquid L2 stored in a container (not shown) to the rinse nozzle 46A using a pump or the like (not shown). Based on the operational instruction from the control device 100, the drive unit 44A moves the rinse nozzle 46A. The rinse nozzle 46A is supported by, for example, an arm 47A or the like shown in FIG. 4. The drive unit 44A may move the arm 47A to move the rinse nozzle 46A.

[0067] The rinse nozzle 46A is disposed above the surface Wa of the workpiece W. As shown in FIG. 4(a), the rinse nozzle 46A of the first rinse liquid supply unit 40A extends in a direction along the rotation direction A of the workpiece W in a plan view. Also, as shown in FIG. 4(c), the rinse nozzle 46A (extension direction of the rinse nozzle 46A) is inclined with respect to the surface Wa of the workpiece W in a side view. The inclination angle of the rinse nozzle 46A with respect to the surface Wa is, for example, approximately 30° to 60°, and one example of the inclination angle is 45°. As a result, the rinse liquid L2 is discharged obliquely downward from the rinse nozzle 46A. The rinse nozzle 46A is disposed so that the discharged rinse liquid L2 is directed along the rotation direction A on the surface Wa of the workpiece W. In other words, the position of the rinse nozzle 46A is adjusted so that at the discharge position P1, where the rinse liquid L2 discharged from the rinse nozzle 46A comes into contact with the surface Wa of the workpiece W, the discharge direction of the rinse liquid L2 is perpendicular to the line connecting the discharge position P1 and the center CP of the workpiece W.

[0068] The driving unit 44A may move the rinse nozzle 46A along the direction of a straight line connecting the discharge position P1 and the center CP of the workpiece W. At this time, the driving unit 44A may move the rinse nozzle 46A so that the discharge position P1 moves on a straight line extending from the center CP of the workpiece W.

[0069] The second rinse liquid supply unit 40B includes, for example, a liquid supply unit 42B, a drive unit 44B, and a rinse nozzle 46B. Based on an operational instruction from the control device 100, the liquid supply unit 42B sends the rinse liquid L2 stored in a container (not shown) to the rinse nozzle 46B using a pump or the like (not shown). Based on an operational instruction from the control device 100, the drive unit 44B moves the rinse nozzle 46B. The rinse nozzle 46B is supported by an arm 47B shown in FIG. 4. The drive unit 44B may move the arm 47B to move the rinse nozzle 46B.

[0070] The rinse nozzle 46B is disposed above the surface Wa of the workpiece W. As shown in FIG. 4(a), the rinse nozzle 46B of the second rinse liquid supply unit 40B extends in a direction along the radial direction of the workpiece W in a plan view, and its discharge port faces outward from the workpiece W. Also, as shown in FIG. 4(b), the rinse nozzle 46B (extension direction of the rinse nozzle 46B) is inclined with respect to the surface Wa of the workpiece W in a side view. The inclination angle of the rinse nozzle 46B with respect to the surface Wa is, for example, approximately 30° to 60°, and one example of the inclination angle is 45°. As a result, the rinse liquid L2 is discharged obliquely downward from the rinse nozzle 46B. The rinse nozzle 46B is disposed so that the discharged rinse liquid L2 is directed radially from the surface Wa of the workpiece W. In other words, at the discharge position P2 where the rinse liquid L2 discharged from the rinse nozzle 46B comes into contact with the surface Wa of the workpiece W, the position of the rinse nozzle 46B is adjusted so that the discharge direction of the rinse liquid L2 extends along a straight line connecting the discharge position P2 and the center CP of the workpiece W, and is directed outward from the workpiece W.

[0071] The driving unit 44B may move the rinse nozzle 46B along the extension direction of a straight line connecting the discharge position P2 and the center CP of the workpiece W, i.e., along the radial direction. At this time, the driving unit 44B may move the rinse nozzle 46B so that the discharge position P2 moves on a straight line extending from the center CP of the workpiece W, and so that the rinse nozzle 46B itself moves on a straight line connecting the discharge position P2 and the center CP of the workpiece W.

[0072] The gas supply unit 50 supplies a predetermined gas to the surface Wa of the workpiece W. The gas supplied by the gas supply unit 50 (hereinafter referred to as "gas G") may be an inert gas, such as nitrogen gas. The gas G is used to remove the rinse liquid L2 from the surface Wa of the workpiece W. After the developer L1 present on the workpiece W is washed away by the rinse liquid L2, gas G is supplied to the center CP of the workpiece W, forming an exposed area of ​​the surface Wa of the workpiece W at the center of the surface Wa of the workpiece W. A circumferential gas-liquid interface is formed around the exposed area of ​​the surface Wa. The gas-liquid interface corresponds to the boundary between the area where the rinse liquid L2 remains and the area where the surface Wa is exposed. By continuing to supply gas G while rotating the workpiece W, the gas-liquid interface moves toward the periphery, i.e., the area where the surface Wa is exposed becomes larger. By increasing the area where the surface Wa is exposed, the rinse liquid L2 is ultimately removed from the surface Wa. In this way, the gas G is used to remove the rinse liquid L2 from the surface Wa of the workpiece W.

[0073] The gas supply unit 50 includes, for example, a gas delivery unit 52 and a gas nozzle 56. The gas delivery unit 52 delivers gas G stored in a container (not shown) to the gas nozzle 56 by a pump or the like (not shown). The gas nozzle 56 is disposed above the workpiece W, and the gas may be sprayed in various directions (radially) as the distance from the gas nozzle 56 increases. The gas nozzle 56 may be formed with, for example, multiple nozzles extending at different angles relative to the surface Wa of the workpiece W. The gas nozzle 56 may be supported by an arm 57 shown in FIG. 4. In this case, the drive unit 54 may move the gas nozzle 56 by moving the arm 57. The gas nozzle 56 may be movable, for example, radially outward from the center CP of the workpiece W.

[0074] The gas nozzle 56 may be connected (fixed) to the rinse nozzle 46A or the rinse nozzle 46B. In this case, the driving unit 44A or the driving unit 44B moves not only the rinse nozzle but also the gas nozzle 56 along the surface Wa.

[0075] The cover member 70 is provided around the holding and rotating part 20. The cover member 70 includes, for example, a cup body 72, a drainage port 74, and an exhaust port 76. The cup body 72 functions as a liquid collection container that receives the developing liquid L1 and rinsing liquid L2 supplied to the workpiece W for liquid processing of the workpiece W. The drainage port 74 is provided at the bottom of the cup body 72 and discharges the waste liquid collected by the cup body 72 to the outside of the developing unit U3. The exhaust port 76 is provided at the bottom of the cup body 72.

[0076] The developing unit U3 has exhaust units V1 and V2. The exhaust unit V1 is provided at the bottom of the housing H and operates based on operational instructions from the control device 100 to exhaust gas from the housing H. The exhaust unit V1 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the volume of exhaust from the housing H using the exhaust unit V1, the temperature, pressure, humidity, and the like inside the housing H can be controlled. The exhaust unit V1 may be controlled to constantly exhaust the inside of the housing H during liquid processing of the workpiece W.

[0077] The exhaust section V2 is provided at the exhaust port 76 and operates based on operational instructions from the control device 100 to exhaust gas from the cup body 72. The downward flow that flows around the workpiece W is exhausted to the outside of the housing H of the developing unit U3 through the exhaust port 76 and the exhaust section V2. The exhaust section V2 may be, for example, a damper whose exhaust volume can be adjusted according to its opening. By adjusting the volume of exhaust from the cup body 72 with the exhaust section V2, the temperature, pressure, humidity, and the like inside the cup body 72 can be controlled.

[0078] The blower B is disposed above the holding and rotating part 20 and the cover member 70 within the housing H of the developing unit U3. The blower B forms a downward flow toward the cover member 70 based on an operation instruction from the control device 100. The blower B may be controlled to constantly form a downward flow during the liquid treatment of the workpiece W.

[0079] (Control device) As shown in FIG. 2, the control device 100 has, as its functional components, a storage unit 102 and a control unit 104. The storage unit 102 stores a program for operating each unit of the coating and developing apparatus 2, including the developing unit U3. The storage unit 102 also stores various data (e.g., information related to signals for operating the developing unit U3) and information from sensors and the like provided in each unit. The storage unit 102 is, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a magneto-optical recording disk. The program may also be stored in an external storage device separate from the storage unit 102, or in an intangible medium such as a propagated signal. The program may be installed in the storage unit 102 from these other media, causing the storage unit 102 to store the program.

[0080] The control unit 104 controls the operation of each unit of the coating and developing apparatus 2 based on a program read from the storage unit 102. The control unit 104 is configured to at least hold and rotate the workpiece W in the holding and rotating unit 20, and move the gas-liquid interface formed by the inert gas and the rinse liquid from the center of the workpiece W toward the periphery by continuing to discharge the inert gas from the gas nozzle onto the workpiece W after the developer has been supplied thereto, while moving the discharge position of the rinse liquid from the rinse nozzle, which supplies the rinse liquid onto the workpiece W at a discharge position located on the outer periphery side of the gas supply position of the gas nozzle, from the center of the workpiece W toward the periphery.

[0081] The control device 100 is configured with one or more control computers. For example, the control device 100 has a circuit 150 shown in FIG. 5. The circuit 150 has one or more processors 152, a memory 154, a storage 156, an input / output port 158, and a timer 162. The storage 156 has a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute a substrate processing method, which will be described later. The storage medium may be a removable medium, such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 154 temporarily stores the program loaded from the storage medium of the storage 156 and the results of calculations performed by the processor 152.

[0082] The processor 152 executes the above program in cooperation with the memory 154. The input / output port 158 ​​inputs and outputs electrical signals between the holding and rotating unit 20, the developer supply unit 30, the rinse liquid supply unit 40 (first rinse liquid supply unit 40A and second rinse liquid supply unit 40B), the exhaust units V1 and V2, the blower B, etc., in accordance with commands from the processor 152. The timer 162 measures the elapsed time by, for example, counting reference pulses at a constant interval. The hardware configuration of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates such a logic circuit.

[0083] [Substrate processing method] Next, a series of processes executed by the control device 100 will be described as an example of a substrate processing method with reference to Figures 6 to 8. Figure 6 is a flow chart outlining the liquid processing performed on the workpiece W.

[0084] First, the control device 100 controls each part of the coating and developing apparatus 2 to process the workpiece W in the processing modules 11 to 13, thereby forming a resist film R on the surface Wa of the workpiece W (step S01). Next, the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the processing module 13 to the exposure device 3 by the transport device A7 or the like. Next, a control device different from the control device 100 controls the exposure device 3 to expose the resist film R formed on the surface Wa of the workpiece W with a predetermined pattern by the exposure device 3 (step S02).

[0085] Next, the control device 100 controls each part of the coating and developing apparatus 2 to transport the workpiece W from the exposure device 3 to the developing unit U3 of the processing module 14. As a result, the workpiece W is held by the holding and rotating part 20 with its surface Wa facing upward. Next, the control device 100 controls the developer supply part 30 of the developing unit U3 to supply the developer L1 to the surface Wa of the workpiece W, i.e., the upper surface of the resist film R (step S03).

[0086] In step S03, the control device 100 may control the developer supply unit 30 to supply the developer L1 from the developer nozzle 36 toward the surface Wa of the workpiece W while horizontally moving the developer nozzle 36 above the non-rotating workpiece W. Alternatively, the control device 100 may control the holding and rotating unit 20 and the developer supply unit 30 to supply the developer L1 from the developer nozzle 36 toward the surface Wa of the workpiece W while rotating the workpiece W with the holding and rotating unit 20 and horizontally moving the developer nozzle 36 above the workpiece W. In this case, the developer L1 is supplied in a spiral pattern from the center to the periphery of the workpiece W or from the periphery to the center of the workpiece W. Step S03 creates a state in which the developer L1 accumulates so as to cover the entire upper surface of the resist film R on the surface Wa of the workpiece W.

[0087] Next, the control device 100 controls the holding and rotating unit 20 and the rinse liquid supply unit 40 (first rinse liquid supply unit 40A and second rinse liquid supply unit 40B) to cause the rinse liquid supply unit 40 to supply the rinse liquid L2 to the surface Wa of the rotating workpiece W, i.e., the upper surface of the developer L1 (step S04). In step S04, the control device 100 may move the rinse nozzle 46A of the first rinse liquid supply unit 40A so that the discharge position P1 of the rinse liquid L2 from the rinse nozzle 46A approximately coincides with the center CP of the workpiece W. In this state, the rinse liquid L2 is supplied from the rinse nozzle 46A while the workpiece W is being rotated, so that the rinse liquid L2 is spread over the entire surface Wa of the workpiece W. The control device 100 may rotate the workpiece W by the holding and rotating unit 20, while moving the rinse nozzle 46A horizontally above the workpiece W, and supply the rinse liquid L2 from the rinse nozzle 46A toward the surface Wa of the workpiece W. In addition, in step S04, the control device 100 may supply the rinse liquid L2 from both the rinse nozzle 46A of the first rinse liquid supply unit 40A and the rinse nozzle 46B of the second rinse liquid supply unit 40B.

[0088] Next, the control device 100 causes the gas supply unit 50 to supply gas G from the gas nozzle 56 to the surface Wa of the rotating workpiece W, i.e., to the upper surface of the rinse liquid L2 remaining on the surface Wa, thereby removing the rinse liquid L2 (step S05). At the start of ejection of the gas G in step S05, the control device 100 may cause the drive unit 54 to move the gas nozzle 56 so that the arrival position of the gas G2 substantially coincides with the center CP of the workpiece W.

[0089] In step S05, gas G is supplied from the gas nozzle 56, and the supply of the rinse liquid L2 continues from step S04. That is, the rinse liquid L2 is removed from the surface Wa of the workpiece W while the supply of gas G and the supply of the rinse liquid L2 are simultaneously performed.

[0090] (Procedure for removing rinse liquid L2) The procedure for removing the rinse liquid L2 in step S05 will be described with reference to FIGS.

[0091] First, as shown in FIG. 7, the control device 100 starts (turns ON) the supply of the gas G (nitrogen gas) from the gas nozzle 56 of the gas supply unit 50. At the same time, the control device 100 starts (turns ON) the supply of the rinse liquid L2 along the rotation direction of the workpiece W from the rinse nozzle 46A of the first rinse liquid supply unit 40A and the supply of the rinse liquid L2 along the direction toward the outer periphery of the workpiece W from the rinse nozzle 46B of the second rinse liquid supply unit 40B (step S11). At this time, as shown in FIG. 8(a), the gas nozzle 56 is arranged to discharge the gas G at the center CP of the workpiece W. Further, the rinse nozzle 46A that extends along the rotation direction and discharges the rinse liquid L2 in the rotation direction is arranged such that the discharge position P1 is located at a position separated from the center CP by a distance r1 along the radial direction of the workpiece W. And the rinse nozzle 46B that extends along the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer peripheral direction along the radial direction is arranged such that the discharge position P2 is located at a position separated from the center CP by a distance r2 along the radial direction of the workpiece W. By starting the discharge of the gas G in this state, as shown in FIG. 8(a), the rinse liquid L2 is gradually removed from the center, and a dry core region D in which the surface Wa of the workpiece W is exposed is formed. Also, a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D. Note that the rinse nozzle 46A is arranged inside the rinse nozzle 46B. That is, the relationship of r1 < r2 is established. When the diameter of the workpiece W is 200 mm, the distance r1 is set to, for example, 10 to 25 mm, and the distance r2 can be set to 20 mm to 50 mm. In FIG. 8(a), a state where the distance r1 is set to 15 mm and the distance r2 is set to 30 mm is schematically shown.

[0092] In this state, the control device 100 adjusts the discharge rate of the rinse liquid L2 from the rinse nozzle 46B (discharge rate per unit time) so that it is smaller than the discharge rate of the rinse liquid L2 from the rinse nozzle 46A (discharge rate per unit time). As an example, the discharge rate of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml / min, and the discharge rate of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml / min. By setting the discharge rates in this manner, in the region from the center CP of the workpiece W at distances r1 to r2, the spiral flow of the rinse liquid L2 caused by the rinse liquid L2 from the rinse nozzle 46A being discharged in the rotational direction becomes dominant. Furthermore, in the region outer circumferentially of the workpiece W than the distance r2, the rinse liquid L2 from the rinse nozzle 46B being discharged in the outer circumferential direction is added, forming a flow of the rinse liquid L2 directed more outward.

[0093] Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46A toward the periphery while continuing to discharge the gas G and the rinse liquid L2 (step S12). FIG. 8(b) shows a state in which the gas nozzle 56 and the rinse nozzle 46A have been moved 15 mm toward the periphery of the workpiece W. By moving the rinse nozzle 46A toward the periphery, the region to which the rinse liquid L2 is supplied moves toward the periphery. Furthermore, by moving the gas nozzle 56, the region to which the gas G is supplied also moves toward the periphery. As a result, the gas-liquid interface D0, which is the boundary between the rinse liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the periphery. That is, as shown in FIG. 8(b), the dry core region D gradually expands from the center CP toward the periphery. 8(b), rinse nozzle 46A, which has moved 15 mm toward the outer periphery, and rinse nozzle 46B are both located 30 mm away from the center CP. In other words, rinse nozzle 46A has moved to the same outer periphery position as rinse nozzle 46B.

[0094] Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S13). FIG. 8(c) schematically illustrates a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A has been stopped. At this stage, the control device 100 may increase the discharge rate of the rinse liquid L2 from the rinse nozzle 46B to approximately the same as the discharge rate from the rinse nozzle 46A (e.g., 350 ml / min). As a result, in a region on the outer periphery side of the distance r2 from the center CP, the rinse liquid L2 from the rinse nozzle 46B is discharged in the outer periphery direction, forming a flow of the rinse liquid L2 toward the outer periphery.

[0095] Next, the control device 100 moves the rinse nozzle 46B in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S14). In the state shown in FIG. 8(c), the gas nozzle 56 has moved 15 mm in the outer circumferential direction from the center CP of the workpiece W. Meanwhile, the discharge position P2 of the rinse nozzle 46B is 30 mm (distance r2) away from the center CP of the workpiece W in the outer circumferential direction. Therefore, the control device 100 moves only the rinse nozzle 46B until the difference between the distance between the discharge position of the gas G and the center CP of the workpiece W and the distance between the discharge position P2 of the rinse liquid L2 and the center CP of the workpiece W becomes 30 mm. In this case, by moving only the rinse nozzle 46B in the outer circumferential direction by 15 mm, the distance between the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G becomes 30 mm. As a result, the difference in distance from the center CP between the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G on the outer periphery of the workpiece W becomes larger compared to the relationship between the discharge position P1 of the rinse nozzle 46A and the discharge position of the gas G on the center side of the workpiece W.

[0096] Next, the control device 100 moves the gas nozzle 56 and the rinse nozzle 46B toward the periphery of the workpiece W while continuing to discharge the gas G and the rinse liquid L2 (step S15). FIG. 8(d) shows a state in which the gas nozzle 56 and the rinse nozzle 46B have been moved toward the periphery of the workpiece W compared to the state shown in FIG. 8(c). From the state in step S14, the gas nozzle 56 and the rinse nozzle 46B are moved toward the periphery of the workpiece W while maintaining the distances from the center CP of the discharge position P2 of the rinse nozzle 46B and the discharge position of the gas G on the workpiece W. At this time, by moving the rinse nozzle 46B toward the periphery, the region to which the rinse liquid L2 is supplied moves toward the periphery. Furthermore, by moving the gas nozzle 56, the region to which the gas G is supplied also moves toward the periphery. As a result, the gas-liquid interface D0 of the workpiece W moves further toward the periphery. That is, as shown in FIG. 8(d), the dry core region D further expands toward the periphery, and the region where the rinse liquid L2 remains is limited to the outer periphery. From this state, when the control device 100 further moves the gas nozzle 56 and the rinse nozzle 46B in the outer circumferential direction, the gas G removes all of the rinse liquid L2, along with the dissolved resist that has dissolved in reaction with the developer L1, from the surface Wa of the workpiece W. As a result, the entire surface Wa of the workpiece W becomes a dry core region D, and the resist pattern formed by development appears.

[0097] 8(b) and step S12, there is a state in which the gas nozzle 56 and the rinse nozzle 46A move simultaneously. Therefore, the gas nozzle 56 and the rinse nozzle 46A may be configured to be movable integrally. In this case, even when the gas nozzle 56 is moved toward the periphery in step S14, the control device 100 may move the rinse nozzle 46A, from which the supply of the rinse liquid L2 has been stopped, toward the periphery together with the gas nozzle 56.

[0098] Furthermore, in the above procedure, only the rinse nozzle 46B is moved in step S14. This process is a process for increasing the difference in distance from the center CP between the discharge position P2 of the rinse nozzle 46B on the outer periphery of the workpiece W and the discharge position of gas G by the gas nozzle 56, compared to the relationship between the rinse nozzle 46A and the gas nozzle 56 on the center side of the workpiece W. On the outer periphery, moving the discharge position P2 of the rinse liquid L2 along the radial direction of the workpiece W and the discharge position of the gas G away to some extent (increasing the difference between the distance between the discharge position of gas G and the center CP of the workpiece W and the distance between the discharge position P2 of the rinse liquid L2 and the center CP of the workpiece W) can reduce the possibility of the rinse liquid L2 being splashed by the gas G discharged from the gas nozzle 56 and scattering (splashing) into the drying core region D. Therefore, as in step S14 above, by increasing the distance between the ejection position P2 of the rinse liquid L2 along the radial direction of the workpiece W and the ejection position of the gas G on the outer periphery side compared to the central side of the workpiece W, it is possible to prevent post-processing residues from remaining on the surface Wa of the workpiece W.

[0099] On the other hand, near the center of the workpiece W, if the distance between the discharge position of the rinse liquid L2 and the discharge position of the gas G along the radial direction of the workpiece W is increased, interference fringes due to the rinse liquid L2 and residues may occur on the surface Wa of the workpiece W. Furthermore, it has been confirmed that if the rinse liquid L2 is discharged in the peripheral direction, as with the rinse nozzle 46B, splashing of the rinse liquid L2 due to the gas G is likely to occur near the center of the workpiece W. Therefore, by adopting a configuration in which the rinse liquid L2 is discharged in the direction along the rotation direction of the workpiece W using the rinse nozzle 46A described above, and further by reducing the distance between the discharge position P1 of the rinse liquid L2 along the radial direction of the workpiece W and the discharge position of the gas G to a certain extent, it is possible to move the gas-liquid interface D0 toward the peripheral direction while suppressing interference fringes and splashing of the rinse liquid L2, thereby preventing residues from accumulating after processing.

[0100] In the above procedure, the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B move independently. Therefore, as shown in FIG. 4 and other figures, the three nozzles are supported by different arms and are capable of moving independently. However, as shown in FIG. 8(b) and step S12, there is a time when the gas nozzle 56 and the rinse nozzle 46A move simultaneously. Therefore, the gas nozzle 56 and the rinse nozzle 46A may be configured to move integrally. In this case, even when the gas nozzle 56 is moved in the outer circumferential direction in step S14, the control device 100 may also move the rinse nozzle 46A, from which the supply of the rinse liquid L2 has been stopped, in the outer circumferential direction together with the gas nozzle 56.

[0101] (Example 1 of modified procedure for removing rinse liquid L2) The above procedure has been described assuming that three nozzles (gas nozzle 56, rinse nozzle 46A, and rinse nozzle 46B) are supported by different arms. Therefore, after the discharge of rinse liquid L2 from rinse nozzle 46A is stopped in step S13, only rinse nozzle 46B is moved in the outer circumferential direction in step S14. That is, in step S14, the distance between the discharge position P2 of rinse liquid L2 and the discharge position of gas G along the radial direction of the workpiece W is adjusted to be large. In contrast, by preparing two gas nozzles and attaching one gas nozzle and one rinse nozzle to one arm, the positional relationship between the discharge positions of rinse liquid L2 and gas G is fixed from the beginning. When performing a procedure similar to that shown in FIGS. 7 and 8 with such a configuration including two arms, the step of moving only rinse nozzle 46B as shown in step S14 can be omitted. A specific procedure will be described below as a first modified example with reference to FIGS. 9 and 10.

[0102] First, it is assumed that the supply unit of the developing unit U3 has gas nozzles 56A and 56B (two gas nozzles). The gas nozzles 56A and 56B may be connected to gas delivery units, and may be configured to supply gas G stored in a container by a pump or the like.

[0103] As shown in FIG. 10(a), the gas nozzle 56A and the rinse nozzle 46A are supported by a first arm 61, and the gas nozzle 56B and the rinse nozzle 46B are supported by a second arm 62. The gas nozzles 56A and 56B are both positioned so that they can discharge gas G toward the center CP of the workpiece W. While FIG. 10(a) shows an example in which the discharge ports of the gas nozzles 56A and 56B overlap in a plan view, the position of the two nozzles can be changed as appropriate. The rinse nozzle 46A provided on the first arm 61 is positioned so that its discharge position P1 is located at a distance r1 from the center CP in the radial direction of the workpiece W. That is, the first arm 61 is positioned so that the discharge position P1 of the gas nozzle 56A and the discharge position P1 of the rinse nozzle 46A are spaced a distance r1 from each other in the radial direction of the workpiece W. On the other hand, the rinse nozzle 46B provided on the second arm 62 is disposed so that a discharge position P2 is located at a position spaced a distance r2 from the center CP along the radial direction of the workpiece W. That is, on the second arm 62, the discharge position of the gas nozzle 56B and the discharge position P2 of the rinse nozzle 46B are disposed at a distance r2 along the radial direction of the workpiece W. Assuming such a nozzle arrangement, the control device 100 executes the following procedure.

[0104] 9, the control device 100 starts (ON) the supply of gas G (nitrogen gas) from the gas nozzle 56A of the first arm 61 and the gas nozzle 56B of the second arm 62. At the same time, the control device 100 starts (ON) the supply of rinse liquid L2 from the rinse nozzle 46A of the first arm 61 along the rotation direction of the workpiece W and the supply of rinse liquid L2 from the rinse nozzle 46B of the second arm 62 along the direction toward the outer periphery of the workpiece W (step S21). As shown in FIG. 10(a), the gas nozzles 56A and 56B are positioned to discharge gas G at the center CP of the workpiece W. Furthermore, the rinse nozzle 46A, which extends along the rotation direction and discharges rinse liquid L2 in the rotation direction, is positioned so that a discharge position P1 is located at a distance r1 from the center CP along the radial direction of the workpiece W. The rinse nozzle 46B, which extends in the radial direction of the workpiece W and discharges the rinse liquid L2 in the radially outer circumferential direction, is positioned so that a discharge position P2 is located at a position spaced a distance r2 from the center CP in the radial direction of the workpiece W. By starting to discharge the gas G in this state, a dry core region D is formed as shown in FIG. 10(a), and a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D.

[0105] In this state, the discharge rates of the rinse liquid L2 from the rinse nozzle 46B are adjusted so that they are smaller than the discharge rate of the rinse liquid L2 from the rinse nozzle 46A (amount discharged per unit time). For example, the discharge rate of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml / min, and the discharge rate of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml / min. By setting these discharge rate relationships, in the region from the center CP of the workpiece W at distances r1 to r2, the spiral flow of the rinse liquid L2 from the rinse nozzle 46A discharged in the rotational direction becomes dominant. Furthermore, in the region on the outer periphery of the workpiece W, the rinse liquid L2 from the rinse nozzle 46B discharged in the outer periphery direction is added, forming a more outward flow of the rinse liquid L2.

[0106] Next, the control device 100 moves the first arm 61 toward the periphery while continuing to discharge the gas G and the rinse liquid L2 (step S22). FIG. 10(b) shows a state in which the first arm 61 has been moved 15 mm toward the periphery of the workpiece W. By moving the first arm 61, the rinse nozzle 46A is moved toward the periphery, and the region to which the rinse liquid L2 is supplied moves toward the periphery. Furthermore, by moving the gas nozzle 56A, the region to which the gas G is supplied also moves toward the periphery. As a result, the gas-liquid interface D0, which is the boundary between the rinse liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the periphery. That is, as shown in FIG. 10(b), the dry core region D gradually expands from the center CP toward the periphery. Note that the gas nozzle 56B and the rinse nozzle 46B of the second arm 62 do not move at this stage.

[0107] Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S23). At this time, the discharge of the gas G from the gas nozzle 56A may also be stopped. FIG. 10(c) schematically illustrates a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A and the discharge of the gas G from the gas nozzle 56A have been stopped. At this stage, the discharge rate of the rinse liquid L2 from the rinse nozzle 46B is increased (UP) to approximately the same as the discharge rate from the rinse nozzle 46A (e.g., 350 ml / min). As a result, in a region on the outer periphery side of the distance r2 from the center CP, the rinse liquid L2 from the rinse nozzle 46B is discharged in the outer periphery direction, forming a flow of the rinse liquid L2 toward the outer periphery.

[0108] Next, the control device 100 moves the second arm 62 toward the periphery (step S24). FIG. 10(d) shows a state in which the second arm 62 (gas nozzle 56B and rinse nozzle 46B) has been moved toward the periphery of the workpiece W, compared to the state shown in FIG. 10(c). By moving the rinse nozzle 46B and the gas nozzle 56B toward the periphery, the regions to which the rinse liquid L2 and the gas G are supplied move toward the periphery. As a result, the gas-liquid interface D0 of the workpiece W moves toward the periphery. That is, as shown in FIG. 10(d), the dry core region D further expands toward the periphery, and the region where the rinse liquid L2 remains is limited to the outer periphery. When the second arm 62 is further moved toward the periphery from this state, the rinse liquid L2 and the dissolved resist that dissolved in the reaction with the developer L1 are all removed from the surface Wa of the workpiece W by the gas G. As a result, the entire surface Wa of the workpiece W becomes a dried core region D, and the resist pattern formed by development appears.

[0109] In this manner, in the procedure using the first arm 61 and the second arm 62, the gas nozzles 56A and 56B move in accordance with the movement of the rinse nozzles 46A and 46B, respectively, so that the distance between the rinse nozzles and the gas nozzles is maintained. That is, the rinse nozzles can be moved in the outer circumferential direction while the ejection positions of the rinse liquid L2 and the gas G are maintained in the first arm 61 and the second arm 62, respectively.

[0110] 9, in step S23, the gas nozzle and rinse nozzle involved in forming the gas-liquid interface D0 are switched from the gas nozzle 56A and rinse nozzle 46A to the gas nozzle 56B and rinse nozzle 46B. At this time, if the amount of gas G discharged from the gas nozzle is changed significantly in a short period of time, splashing of the liquid may occur due to interference with the rinse liquid L2. Therefore, the control device 100 may apply control such as gradually changing the amount of gas discharged from the gas nozzles 56A and 56B.

[0111] (Example 2 of modified procedure for removing rinse liquid L2) A second modification example of the procedure for removing the rinse liquid L2 in step S05 will be described while referring to FIGS. 11 and 12. In this modification example, the difference is that the gas nozzle 56 does not move as compared with the example described in FIGS. 7 and 8. Specifically, the gas nozzle 56 is fixed at the center CP of the workpiece W.

[0112] First, as shown in FIG. 11, the control device 100 starts (turns ON) the supply of the gas G (nitrogen gas) from the gas nozzle 56 of the gas supply unit 50. At the same time, the control device 100 starts (turns ON) the supply of the rinse liquid L2 along the rotation direction of the workpiece W from the rinse nozzle 46A of the first rinse liquid supply unit 40A and the supply of the rinse liquid L2 along the direction toward the outer periphery of the workpiece W from the rinse nozzle 46B of the second rinse liquid supply unit 40B (step S31). At this time, as shown in FIG. 12(a), the gas nozzle 56 is arranged to discharge the gas G at the center CP of the workpiece W. Further, the rinse nozzle 46A that extends along the rotation direction and discharges the rinse liquid L2 in the rotation direction is arranged such that the discharge position P1 is located at a position separated from the center CP by a distance r1 along the radial direction of the workpiece W. And the rinse nozzle 46B that extends along the radial direction of the workpiece W and discharges the rinse liquid L2 in the outer peripheral direction along the radial direction is arranged such that the discharge position P2 is located at a position separated from the center CP by a distance r2 along the radial direction of the workpiece W. By starting the discharge of the gas G in this state, as shown in FIG. 12(a), the rinse liquid L2 is gradually removed from the center, and a dry core region D where the surface Wa of the workpiece W is exposed is formed. Also, a gas-liquid interface D0 is formed at the boundary between the region where the rinse liquid L2 remains and the dry core region D. Note that the rinse nozzle 46A is arranged inside the rinse nozzle 46B. That is, the relationship of r1 < r2 is established. When the diameter of the workpiece W is 200 mm, the distance r1 can be set to, for example, 10 to 25 mm, and the distance r2 can be set to 20 mm to 50 mm. In FIG. 12(a), a state where the distance r1 is set to 15 mm and the distance r2 is set to 30 mm is schematically shown.

[0113] In this state, the control device 100 adjusts the discharge rate of the rinse liquid L2 from the rinse nozzle 46B (discharge rate per unit time) so that it is smaller than the discharge rate of the rinse liquid L2 from the rinse nozzle 46A (discharge rate per unit time). As an example, the discharge rate of the rinse liquid L2 from the rinse nozzle 46A is adjusted to 350 ml / min, and the discharge rate of the rinse liquid L2 from the rinse nozzle 46B is adjusted to 100 ml / min. By setting the discharge rates in this manner, in the region from the center CP of the workpiece W at distances r1 to r2, the spiral flow of the rinse liquid L2 caused by the rinse liquid L2 from the rinse nozzle 46A being discharged in the rotational direction becomes dominant. Furthermore, in the region outer circumferentially of the workpiece W than the distance r2, the rinse liquid L2 from the rinse nozzle 46B being discharged in the outer circumferential direction is added, forming a flow of the rinse liquid L2 directed more outward.

[0114] Next, the control device 100 moves the rinse nozzle 46A in the outer circumferential direction while continuing to discharge the gas G and the rinse liquid L2 (step S32). FIG. 12(b) shows a state in which the rinse nozzle 46A has been moved 15 mm in the outer circumferential direction of the workpiece W. By moving the rinse nozzle 46A in the outer circumferential direction, the region to which the rinse liquid L2 is supplied moves in the outer circumferential direction. As a result, the gas-liquid interface D0, which is the boundary between the rinse liquid L2 formed at the center of the workpiece W and the dry core region D, gradually moves toward the outer circumferential direction. That is, as shown in FIG. 12(b), the dry core region D gradually expands from the center CP toward the outer circumferential direction. Even when the gas nozzle 56 does not move, by moving the discharge position of the rinse liquid L2 from the rinse nozzle 46A in the outer circumferential direction, the gas-liquid interface D0 also moves toward the outer circumferential direction.

[0115] Next, the control device 100 stops (OFF) the discharge of the rinse liquid L2 from the rinse nozzle 46A (step S33). FIG. 12(c) schematically illustrates a state in which the discharge of the rinse liquid L2 from the rinse nozzle 46A has been stopped. At this stage, the control device 100 may increase the discharge rate of the rinse liquid L2 from the rinse nozzle 46B to approximately the same as the discharge rate from the rinse nozzle 46A (e.g., 350 ml / min). As a result, in a region on the outer periphery side of the distance r2 from the center CP, the rinse liquid L2 from the rinse nozzle 46B is discharged in the outer periphery direction, forming a flow of the rinse liquid L2 toward the outer periphery.

[0116] Next, the control device 100 moves the rinse nozzle 46B toward the periphery of the workpiece W while continuing to discharge the gas G and the rinse liquid L2 (step S34). FIG. 12(d) shows a state in which the rinse nozzle 46B has been moved toward the periphery of the workpiece W compared to the state shown in FIG. 12(c). By moving the rinse nozzle 46B toward the periphery, the area to which the rinse liquid L2 is supplied moves toward the periphery. As a result, the gas-liquid interface D0 of the workpiece W moves further toward the periphery. That is, as shown in FIG. 12(d), the dry core region D further expands toward the periphery, and the area where the rinse liquid L2 remains is limited to the outer periphery. From this state, when the rinse nozzle 46B is further moved toward the periphery, the gas G removes all of the rinse liquid L2 from the surface Wa of the workpiece W, along with the dissolved resist that dissolved in the reaction with the developer L1. As a result, the entire surface Wa of the workpiece W becomes the dry core region D, and the resist pattern formed by development appears.

[0117] 11 and 12, the gas nozzle 56, the rinse nozzle 46A, and the rinse nozzle 46B basically operate independently. Therefore, by operating these nozzles individually, finer control may be possible.

[0118] In the above procedure, when the rinse nozzle 46B moves outward while discharging the rinse liquid L2 only from the rinse nozzle 46B in step S34, the distance from the gas nozzle 56 fixed at the center gradually increases. As the distance from the gas nozzle 56 increases, it becomes increasingly difficult to widen the dried core region D with the gas G discharged from the gas nozzle 56, which may cause disturbance of the gas-liquid interface D0. Therefore, the control device 100 may increase the amount of gas G discharged from the gas nozzle 56 as the distance between the gas nozzle 56 and the rinse nozzle 46B increases. Also, as in the first modified example shown in FIGS. 9 and 10 , the supply unit of the developing unit U3 may be configured to include a second gas nozzle that can move integrally with the rinse nozzle 46B and to operate them with a single arm. With this configuration, it is possible to maintain a constant distance between the ejection position P2 of the rinse liquid L2 and the ejection position of the gas G on the outer periphery of the workpiece W, i.e., at the stage where the gas-liquid interface D0 is formed by the rinse nozzle 46B and the gas nozzle, and the rinse liquid L2 can be effectively removed.

[0119] [Effect] In the coating and developing apparatus 2 as the substrate processing apparatus described above, after the developer has been supplied to the workpiece W, the inert gas continues to be discharged from the gas nozzle 56 while the discharge position of the rinse liquid from the rinse nozzles 46A and 46B is moved from the center of the workpiece W toward the periphery. This allows the gas-liquid interface D0 formed by the inert gas and the rinse liquid L2 to move from the center toward the periphery. At this time, as the rinse nozzles 46A and 46B move from the center of the workpiece W to the periphery, the discharge direction of the rinse liquid L2 is switched from the direction along the rotational direction of the workpiece W to the radial direction. At the center of the workpiece W, the discharge direction of the rinse liquid from the rinse nozzle is aligned with the rotational direction of the workpiece W when the gas-liquid interface is formed, thereby suppressing the generation of residue after removal of the rinse liquid. On the other hand, at the periphery of the workpiece W, the discharge direction of the rinse liquid from the rinse nozzle is aligned with the radial direction of the workpiece W, thereby suppressing the generation of residue after removal of the rinse liquid. Therefore, by configuring the gas-liquid interface D0 to be moved toward the periphery by switching the direction of the rinse liquid ejection as described above, it is possible to reduce residues on the surface of the workpiece W after cleaning the workpiece W.

[0120] As a specific method for realizing the above configuration, as shown in the first modified example, a configuration including a first arm 61 provided with a first rinse nozzle 46A and a first gas nozzle 56A and a second arm 62 provided with a second rinse nozzle 46B and a second gas nozzle 56B may be used. With this configuration, the inert gas and rinse liquid are supplied from the first arm 61, in which the direction of the rinse liquid discharged from the first rinse nozzle 46A is aligned with the rotation direction of the workpiece W, to form a gas-liquid interface D0, thereby suppressing the generation of residues after the rinse liquid is removed. On the other hand, the inert gas and rinse liquid are supplied from the second arm 62, in which the direction of the rinse liquid discharged from the second rinse nozzle 46B is aligned with the radial direction of the substrate, to form a gas-liquid interface D0, thereby suppressing the generation of residues after the rinse liquid is removed. Therefore, the above configuration can reduce residues on the surface of the workpiece W after cleaning.

[0121] As described in the above embodiment, the gas nozzle 56, the first rinse nozzle 46A, and the second rinse nozzle may be mounted on arms that can move independently of each other. In this case, the first rinse nozzle 46A may eject rinse liquid in a direction that coincides with the rotation of the workpiece W, and the second rinse nozzle 46B may eject rinse liquid in a direction that coincides with the radial direction of the workpiece W. The control device 100 switches the state to a first state in which the first rinse nozzle 46A supplies rinse liquid to form a gas-liquid interface D0 on the central side of the workpiece W relative to a predetermined switching position, and to a second state in which the second rinse nozzle 46B supplies rinse liquid to form a gas-liquid interface D0 on the outer periphery side of the workpiece W relative to the switching position. In this case, the gas nozzle 56 may be moved in the outer periphery in response to the movement of the rinse nozzles 46A and 46B in the outer periphery direction in the first and second states.

[0122] Even with the above configuration, the gas-liquid interface D0 is formed on the center side of the workpiece W by supplying the rinse liquid from the first rinse nozzle 46A, which is discharged in a direction parallel to the rotation direction of the substrate. On the other hand, the gas-liquid interface D0 is formed on the outer periphery side of the workpiece W by supplying the rinse liquid from the second rinse nozzle 46B, which is discharged in a direction parallel to the radial direction of the substrate. Therefore, with the above configuration, it is possible to reduce residue on the surface of the workpiece W after cleaning the workpiece W.

[0123] In another embodiment, the control device 100 may include a gas nozzle 56A as a first gas nozzle whose discharge position is fixed at the center of the workpiece W, a first arm provided with the first rinse nozzle 46A, and a second arm provided with a gas nozzle 56B as a second rinse nozzle 46B and a second gas nozzle. In this case, the first rinse nozzle 46A may discharge the rinse liquid in a direction that follows the rotation of the workpiece W, and the second rinse nozzle 46B may discharge the rinse liquid in a direction that follows the radial direction of the workpiece W. In this case, the control device 100 may supply the rinse liquid from the first rinse nozzle 46A while supplying an inert gas from the first gas nozzle 56A on the center side of the workpiece W from a predetermined switching position, thereby setting the state to a first state in which a gas-liquid interface D0 is formed. Furthermore, the control device 100 may switch to a second state in which an inert gas and a rinse liquid are supplied while moving the second arm on the outer periphery of the workpiece W from the switching position, thereby forming a gas-liquid interface D0.

[0124] Even with the above configuration, the gas-liquid interface D0 is formed on the center side of the workpiece W by supplying the rinse liquid from the first rinse nozzle 46A, which is discharged in a direction parallel to the rotation direction of the substrate. On the other hand, the gas-liquid interface D0 is formed on the outer periphery side of the workpiece W by supplying the rinse liquid from the second rinse nozzle 46B, which is discharged in a direction parallel to the radial direction of the substrate. Therefore, with the above configuration, it is possible to reduce residue on the surface of the workpiece W after cleaning the workpiece W.

[0125] Furthermore, the supply unit may be configured to include a first gas nozzle whose discharge position is fixed at the center of the workpiece W, and a first arm provided with a first rinse nozzle that can change the direction of the rinse liquid that is discharged. In this case, the control device 100 may gradually change the direction of the rinse liquid discharged from the first rinse nozzle from a direction along the rotation direction of the workpiece W to a direction along the radial direction of the substrate when the first rinse nozzle moves in the outer circumferential direction.

[0126] Even with the above configuration, the gas-liquid interface D0 is formed on the center side of the workpiece W by supplying the rinse liquid from the first rinse nozzle 46A, which is discharged in a direction parallel to the rotation direction of the substrate. On the other hand, the gas-liquid interface D0 is formed on the outer periphery side of the workpiece W by supplying the rinse liquid from the second rinse nozzle 46B, which is discharged in a direction parallel to the radial direction of the substrate. Therefore, with the above configuration, it is possible to reduce residue on the surface of the workpiece W after cleaning the workpiece W.

[0127] In the coating and developing apparatus 2 serving as a substrate processing apparatus, in the first state, the rinse liquid may also be discharged from the second rinse nozzle 46B. Furthermore, in the second state, the discharge of the rinse liquid from the first rinse nozzle 46A may be stopped, and the amount of rinse liquid discharged from the second rinse nozzle 46B may be increased compared to the first state. With the above configuration, in the first state, the rinse liquid is also discharged from the second rinse nozzle, thereby promoting the movement of the rinse liquid from near the center of the substrate toward the periphery. Meanwhile, in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped, and the amount of rinse liquid discharged from the second rinse nozzle is increased, thereby promoting the movement of the rinse liquid toward the periphery.

[0128] Furthermore, the control device 100 may be configured to stop the discharge of gas from the first gas nozzle 56A in the second state. By adopting the above configuration, the flow of gas on the surface of the workpiece W is stabilized in the second state, and disturbance of the gas-liquid interface D0 can be prevented.

[0129] In the first state, the distance between the position on the workpiece W where the rinse liquid is ejected from the first rinse nozzle and the position where the gas is ejected from the gas nozzle may be smaller than the distance between the position on the workpiece W where the rinse liquid is ejected from the second rinse nozzle and the position where the gas is ejected from the second gas nozzle in the second state.

[0130] To achieve the above configuration, for example, the distance between the position at which the rinse liquid is ejected from the first rinse nozzle 46A on the first arm 61 and the position at which the gas is ejected from the first gas nozzle 56A may be smaller than the distance between the position at which the rinse liquid is ejected from the second rinse nozzle 46B on the second arm 62 and the position at which the gas is ejected from the second gas nozzle 56B.

[0131] When forming a gas-liquid interface D0 on the workpiece W, residue can be reduced by having the rinse liquid ejection position and the gas ejection position closer to each other near the center of the workpiece W, and by having the rinse liquid ejection position and the gas ejection position farther apart near the periphery of the workpiece W. As described above, residue after cleaning can be further reduced by arranging the first rinse nozzle so that the ejection positions are closer to the gas nozzle, and by arranging the second rinse nozzle so that the ejection positions are farther apart from the gas nozzle.

[0132] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0133] For example, in the above embodiment, a case has been described in which a rinse liquid is supplied to the workpiece W after the developer has been supplied, and the rinse liquid is then removed. However, the process described in the above embodiment can also be applied to processes using other chemicals.

[0134] In the above embodiment, the case where the discharge rates of the rinse liquid L2 and the gas G are intermittently switched has been described. However, the discharge rates of the rinse liquid L2 and the gas G may be changed stepwise or continuously. As described above, the generation of residues can be suppressed by gently forming the gas-liquid interface D0 and gradually moving it toward the outer periphery of the workpiece W. Therefore, to achieve this state, the discharge rates of the rinse liquid L2 and the gas G may be appropriately adjusted. Furthermore, the rotation speed of the workpiece W, etc. may also be appropriately adjusted.

[0135] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0136] 1...substrate processing system, 2...coating and developing apparatus, 3...exposure apparatus, 20...holding and rotating unit, 36...developing nozzle, 40...rinsing liquid supply unit, 40A...first rinsing liquid supply unit, 40B...second rinsing liquid supply unit, 46...rinsing nozzle, 46A...rinsing nozzle (first rinsing nozzle), 46B...rinsing nozzle (second rinsing nozzle), 47A, 47B...arm, 50...gas supply unit, 56...gas nozzle, 56A...gas nozzle (first gas nozzle), 56B...gas nozzle (second gas nozzle), 57...arm, 61...first arm, 62...second arm, 100...control device.

Claims

1. A substrate processing apparatus for processing a substrate, a holding and rotating unit that holds and rotates the substrate; a supply unit including at least one gas nozzle configured to supply an inert gas to the substrate, and at least one rinse nozzle configured to supply a rinse liquid to the substrate at a discharge position provided on the outer periphery side of a gas supply position by the gas nozzle; A control unit; Equipped with the control unit performs a removal process on the substrate in a state in which the rinse liquid has been supplied at least to the center of the substrate after the developer has been supplied to the substrate; The removal process includes: starting the supply of the inert gas from the gas nozzle so that the discharge position of the inert gas is at the center of the substrate; and moving the discharge position of the rinse liquid from the rinse nozzle from a position on the outer periphery side of the center of the substrate toward the outer periphery while continuing to discharge the inert gas from the gas nozzle, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery, while maintaining a state in which the discharge position of the rinse liquid from the rinse nozzle is located on the outer periphery side of a gas supply position by the gas nozzle, In the substrate processing apparatus, when the rinse nozzle moves from the center side to the outer periphery side of the substrate, the control unit switches the direction of the rinse liquid ejected from the rinse nozzle from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate.

2. the supply unit includes a first arm provided with a first rinse nozzle and a first gas nozzle, and a second arm provided with a second rinse nozzle and a second gas nozzle; the first rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to the center thereof, and the direction of the rinse liquid discharged from the first rinse nozzle is along a rotation direction of the substrate; the second rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to a center thereof, and the direction of the rinse liquid discharged from the second rinse nozzle is along a radial direction of the substrate; 2. The substrate processing apparatus according to claim 1, wherein the control unit switches, in the removal process, from a first state in which the gas-liquid interface is formed by supplying the inert gas and the rinse liquid while moving the first arm closer to the center of the substrate than a predetermined switching position, to a second state in which the gas-liquid interface is formed by supplying the inert gas and the rinse liquid while moving the second arm closer to the outer periphery of the substrate than the switching position.

3. The control unit In the first state, the rinse liquid is also discharged from the second rinse nozzle; 3. The substrate processing apparatus according to claim 2, wherein in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped and the discharge amount of the rinse liquid from the second rinse nozzle is increased compared to the first state.

4. The substrate processing apparatus according to claim 3 , wherein the control unit stops the discharge of the inert gas from the first gas nozzle in the second state.

5. 5. The substrate processing apparatus according to claim 2, wherein a distance between a position where the rinse liquid is discharged from the first rinse nozzle on the first arm and a position where the inert gas is discharged from the first gas nozzle is smaller than a distance between a position where the rinse liquid is discharged from the second rinse nozzle on the second arm and a position where the inert gas is discharged from the second gas nozzle.

6. the supply unit includes a gas nozzle, a first rinse nozzle, and a second rinse nozzle, which are provided on an arm that is movable independently of one another; the first rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to the center thereof, and the direction of the rinse liquid discharged from the first rinse nozzle is along a rotation direction of the substrate; the second rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to a center thereof, and the direction of the rinse liquid discharged from the second rinse nozzle is along a radial direction of the substrate; 2. The substrate processing apparatus according to claim 1, wherein the control unit switches, in the removal process, from a first state in which the gas-liquid interface is formed by supplying the rinse liquid from the first rinse nozzle closer to the center of the substrate than a predetermined switching position, to a second state in which the gas-liquid interface is formed by supplying the rinse liquid from the second rinse nozzle closer to the outer periphery of the substrate than the switching position, and moves the gas nozzle in the outer periphery direction in response to movements of the first rinse nozzle and the second rinse nozzle in the outer periphery direction in the first state and the second state.

7. The control unit In the first state, the rinse liquid is also discharged from the second rinse nozzle; 7. The substrate processing apparatus according to claim 6, wherein in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped and the discharge amount of the rinse liquid from the second rinse nozzle is increased compared to the first state.

8. 8. The substrate processing apparatus according to claim 6, wherein in the first state, a distance between a position on the substrate where the rinse liquid is discharged from the first rinse nozzle and a position on the substrate where the inert gas is discharged from the gas nozzle is smaller than a distance between a position on the substrate where the rinse liquid is discharged from the second rinse nozzle and a position on the substrate where the inert gas is discharged from the gas nozzle in the second state.

9. the supply unit includes a first gas nozzle whose discharge position is fixed at the center of the substrate, a first arm provided with a first rinse nozzle, and a second arm provided with a second rinse nozzle; the first rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to the center thereof, and the direction of the rinse liquid discharged from the first rinse nozzle is along a rotation direction of the substrate; the second rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to a center thereof, and the direction of the rinse liquid discharged from the second rinse nozzle is along a radial direction of the substrate; 2. The substrate processing apparatus according to claim 1, wherein the control unit switches, in the removal process, from a first state in which the gas-liquid interface is formed by supplying the rinse liquid from the first rinse nozzle while moving the first arm and supplying the inert gas from the first gas nozzle at a position closer to the center of the substrate than a predetermined switching position, to a second state in which the gas-liquid interface is formed by supplying the rinse liquid from the second rinse nozzle while moving the second arm and continuing to supply the inert gas at a position closer to the outer periphery of the substrate than the switching position.

10. The control unit In the first state, the rinse liquid is also discharged from the second rinse nozzle; 10. The substrate processing apparatus according to claim 9, wherein in the second state, the discharge of the rinse liquid from the first rinse nozzle is stopped and the discharge amount of the rinse liquid from the second rinse nozzle is increased compared to the first state.

11. The second arm is further provided with a second gas nozzle, the control unit continues supplying the inert gas by supplying the inert gas from at least the second gas nozzle in the second state; 11. The substrate processing apparatus according to claim 9, wherein in the first state, a distance between a position on the substrate where the rinse liquid is discharged from the first rinse nozzle and a position on the substrate where the inert gas is discharged from the first gas nozzle is smaller than a distance between a position on the substrate where the rinse liquid is discharged from the second rinse nozzle and a position on the substrate where the inert gas is discharged from the second gas nozzle in the second state.

12. the supply unit has a first arm provided with a first rinse nozzle capable of changing the direction of the rinse liquid to be discharged, the first rinse nozzle is configured to discharge the rinse liquid toward an outer periphery of the substrate relative to the center thereof, 2. The substrate processing apparatus according to claim 1, wherein the control unit gradually changes a direction of the rinse liquid ejected from the first rinse nozzle from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate when the first rinse nozzle moves in the outer circumferential direction during the removal process.

13. A substrate processing method for processing a substrate, comprising: holding and rotating the substrate in a holding and rotating unit; and performing a removal process on the substrate in a state in which a rinse liquid has been supplied to at least the center of the substrate after the developer has been supplied to the substrate, The removal process includes: starting the supply of the inert gas from the gas nozzle so that the discharge position of the inert gas from the gas nozzle is at the center of the substrate; while continuing to discharge the inert gas from the gas nozzle, a discharge position of the rinse liquid from a rinse nozzle that supplies the rinse liquid to the substrate at a discharge position provided on the outer periphery side of a gas supply position by the gas nozzle is moved from a position on the outer periphery side of the center of the substrate toward the outer periphery while maintaining the discharge position of the rinse liquid from the rinse nozzle at a discharge position provided on the outer periphery side of a gas supply position by the gas nozzle, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery; Including, a substrate processing method in which, during the movement of the rinse nozzle from the center side toward the outer periphery side of the substrate, a direction of the rinse liquid ejected from the rinse nozzle is switched from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate.

14. A substrate processing program for causing a computer to execute substrate processing, holding and rotating the substrate in a holding and rotating unit; After the developer is supplied to the substrate, a rinsing liquid is supplied to at least the center of the substrate, and then a removal process is performed on the substrate; causing the computer to execute The removal process includes: starting the supply of the inert gas from the gas nozzle so that the discharge position of the inert gas from the gas nozzle is at the center of the substrate; while continuing to discharge the inert gas from the gas nozzle, a discharge position of the rinse liquid from a rinse nozzle that supplies the rinse liquid to the substrate at a discharge position provided on the outer periphery side of a gas supply position by the gas nozzle is moved from a position on the outer periphery side of the center of the substrate toward the outer periphery while maintaining the discharge position of the rinse liquid from the rinse nozzle at a discharge position provided on the outer periphery side of a gas supply position by the gas nozzle, thereby moving a gas-liquid interface formed by the inert gas and the rinse liquid from the center toward the outer periphery; Including, a substrate processing program for switching, during the movement of the rinse nozzle from a center side to an outer periphery side of the substrate, a direction of the rinse liquid ejected from the rinse nozzle from a direction along a rotation direction of the substrate to a direction along a radial direction of the substrate.

Images