Substrate Processing Equipment

Abstract

To suppress deposition of a process liquid to a bottom face of a substrate.SOLUTION: In a substrate holding unit 2, a gas supply section 23 feeds out a gas between a bottom face 92 of a substrate 9 and a base surface 211 of a base section 21 and forms a radially outward air current. A separation plate 26 is disposed radially outside of an outer peripheral edge of the substrate 9 on the base surface 211 of the base section 21 and encloses a periphery of the substrate 9. An inner peripheral edge of the separation plate 26 and the outer peripheral edge of the substrate 9 are opposed while being separated from each other in a radial direction. A top face 261 of the separation plate 26 is located at the same position as a top face 91 of the substrate 9 in a vertical direction or positioned at a lower side of the top face 91 of the substrate 9. An annular passage 264 is provided between a bottom face 262 of the separation plate 26 and the base surface 211 of the base section 21. The separation plate 26 is fixed to the base section 21 and rotated together with the base section 21 by a substrate rotating mechanism 33. Thus, deposition of a process liquid supplied to the top face 91 of the substrate 9 to the bottom face 92 of the substrate 9 can be suppressed.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for processing a substrate. [Background technology]

[0002] Conventionally, in the manufacturing process of semiconductor substrates (hereinafter simply referred to as "substrates"), various processes are performed on the substrates. For example, liquid processing is performed on the substrate by rotating the substrate held in a horizontal position by a substrate holder and supplying a processing liquid to the surface of the rotating substrate.

[0003] The wet etching apparatus of Patent Document 1 uses a Bernoulli chuck as a substrate holder for holding a substrate. High-pressure gas is supplied between the substrate and a support positioned below the substrate, and the negative pressure created by the gas flowing along the underside of the substrate is used to suck the substrate toward the support. The gas is supplied to the space between the substrate and the support from an annular nozzle formed on the upper surface of the support below the outer periphery of the substrate. The support is provided with an annular gas exhaust section that extends from the annular nozzle radially outward beyond the outer periphery of the substrate and is spaced downward from the substrate. An annular gas exhaust flow path is provided below the gas exhaust section, extending radially outward and downward from the annular nozzle.

[0004] In this wet etching apparatus, the etching liquid supplied to the upper surface of the substrate flows from the outer periphery of the substrate to the lower surface, filling the gap between the peripheral edge of the lower surface of the substrate and the upper surface of the gas exhaust portion of the support. This allows etching of the peripheral edge of the lower surface of the substrate. The etching liquid that flows to the lower surface of the substrate is exhausted radially outward through the gas exhaust flow path. In addition, gas supplied from the annular nozzle between the substrate and the support is also exhausted radially outward through the gas exhaust flow path. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-142818 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in liquid processing of a substrate, unlike the etching process of Patent Document 1, it is sometimes necessary to prevent the processing liquid supplied to the upper surface of the substrate from flowing over to the lower surface of the substrate. However, when a substrate is held by a Bernoulli chuck as in Patent Document 1, the negative pressure generated between the substrate and the support may cause the processing liquid, etc., supplied to the upper surface of the substrate and flowing down from the outer edge of the substrate to be sucked in and flow over to the lower surface of the substrate. Furthermore, if a protrusion such as a centering pin is provided on the substrate holder outside the outer edge of the substrate, the processing liquid splashed from the rotating substrate may collide with the protrusion, and the droplets or mist generated by the collision may flow under the substrate and adhere to the lower surface of the substrate.

[0007] The present invention has been made in view of the above-mentioned problems, and has as its object to suppress adhesion of a processing liquid to the lower surface of a substrate. [Means for solving the problem]

[0008] The invention of claim 1 is a substrate processing apparatus for processing a substrate, comprising: a substrate holding unit that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit about a central axis facing in the vertical direction; and a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate, wherein the substrate holding unit comprises a base unit that faces the lower surface of the substrate and has a base surface that extends radially outward from the outer periphery of the substrate; a plurality of support pins that are arranged in the circumferential direction on the base surface and protrude upward from the base surface and contact the outer periphery of the lower surface of the substrate; a gas supply unit that delivers gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward; and a processing liquid supply unit that delivers a gas to the upper surface of the substrate on the base surface of the base unit. The aforementionedand an annular separation plate disposed radially outward from an outer peripheral edge and surrounding the periphery of the substrate, the inner peripheral edge of the separation plate and the outer peripheral edge of the substrate facing each other while being spaced apart from each other in the radial direction, the upper surface of the separation plate being positioned at the same position as the upper surface of the substrate in the vertical direction or lower than the upper surface of the substrate, an annular flow path being provided between the lower surface of the separation plate and the base surface of the base portion, the separation plate being fixed to the base portion and being rotated together with the base portion by the substrate rotation mechanism. The base surface is located radially outward from the plurality of support pins and radially inward from the inner peripheral edge of the separation plate, below the outer peripheral edge of the substrate, and has an inclined surface that slopes downward as it extends radially outward.

[0009] The invention described in claim 2 is the substrate processing apparatus described in claim 1, wherein the substrate holding part adsorbs the substrate by causing a pressure drop in the space between the substrate and the base part due to the Bernoulli effect caused by the air flow.

[0010] A third aspect of the present invention provides the substrate processing apparatus according to the second aspect, wherein the lower surface of the separation plate is an inclined surface that slopes downward as it extends radially outward.

[0011] The invention described in claim 4 is a substrate processing apparatus described in any one of claims 1 to 3, wherein the vertical distance between the lower surface of the substrate and the base surface at a radial position where the substrate and the multiple support pins contact is smaller than the vertical distance between the lower surface of the separation plate and the base surface below the inner peripheral edge of the separation plate.

[0012] The invention described in claim 5 is a substrate processing apparatus described in any one of claims 1 to 4, wherein the substrate holding portion further includes a pin protruding upward from the base surface radially outward of the substrate, the upper end of the pin being inserted into an opening provided in the separation plate, and the upper end of the pin being positioned at the same vertical position as the area on the upper surface of the separation plate surrounding the opening or lower than the area. The invention of claim 6 is a substrate processing apparatus for processing a substrate, comprising: a substrate holding unit that holds a substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holding unit about a central axis facing in an up-down direction; and a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate, wherein the substrate holding unit comprises: a base unit that faces the lower surface of the substrate and has a base surface that extends radially outward from an outer periphery of the substrate; a plurality of support pins that are arranged in a circumferential direction on the base surface, protrude upward from the base surface, and contact the outer periphery of the lower surface of the substrate; a gas supply unit that delivers gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward; and a support pin that is arranged on the base surface of the base unit radially outward from the outer periphery of the substrate. and an annular separation plate placed on the substrate and surrounding the substrate, the inner peripheral edge of the separation plate and the outer peripheral edge of the substrate facing each other while being spaced apart radially, the upper surface of the separation plate being located at the same vertical position as the upper surface of the substrate or lower than the upper surface of the substrate, an annular flow path being provided between the lower surface of the separation plate and the base surface of the base portion, the separation plate being fixed to the base portion and rotated together with the base portion by the substrate rotation mechanism, the substrate holding portion further comprising a pin protruding upward from the base surface radially outward of the substrate, the upper end of the pin being inserted into an opening provided in the separation plate, and the upper end of the pin being located at the same vertical position as the area of ​​the upper surface of the separation plate surrounding the opening or lower than said area. [Effects of the Invention]

[0013] In the present invention, adhesion of the processing liquid to the lower surface of the substrate can be suppressed. [Brief explanation of the drawings]

[0014] [Figure 1] 1 is a plan view showing a substrate processing system according to an embodiment; [Figure 2] FIG. 2 is a side view showing the configuration of the substrate processing apparatus. [Figure 3] FIG. 2 is a diagram illustrating a configuration of a control unit. [Figure 4] FIG. 2 is a plan view showing a substrate holding part. [Figure 5] FIG. 3 is a cross-sectional view showing a part of the substrate holding part. [Figure 6] FIG. 3 is a cross-sectional view showing a part of the substrate holding part. [Figure 7] FIG. 2 is a block diagram illustrating a configuration related to the supply of gas and liquid. [Figure 8] FIG. [Figure 9] FIG. 2 is a cross-sectional view showing a substrate. [Figure 10] FIG. 1 is a diagram showing a processing flow for a substrate. DETAILED DESCRIPTION OF THE INVENTION

[0015] 1 is a schematic plan view showing the layout of a substrate processing system 10 including a substrate processing apparatus according to one embodiment of the present invention. The substrate processing system 10 processes semiconductor substrates 9 (hereinafter simply referred to as "substrates 9"). The substrate processing system 10 includes an indexer block 101 and a processing block 102 coupled to the indexer block 101.

[0016] The indexer block 101 includes a carrier holding unit 104, an indexer robot 105, and an IR movement mechanism 106. The carrier holding unit 104 holds a plurality of carriers 107, each capable of accommodating a plurality of substrates 9. The plurality of carriers 107 (e.g., FOUPs) are held by the carrier holding unit 104 while being arranged in a predetermined carrier arrangement direction. The IR movement mechanism 106 moves the indexer robot 105 in the carrier arrangement direction. The indexer robot 105 performs an unloading operation to unload the substrates 9 from the carriers 107, and a loading operation to load the substrates 9 into the carriers 107 held by the carrier holding unit 104. The substrates 9 are transported by the indexer robot 105 in a horizontal position.

[0017] The processing block 102 includes a plurality of (for example, four or more) processing units 108 that process substrates 9, and a center robot 109. The processing units 108 are arranged to surround the center robot 109 in a plan view. The processing units 108 perform various processes on the substrates 9. A substrate processing apparatus, which will be described later, is one of the processing units 108. The center robot 109 performs a loading operation to load the substrate 9 into the processing unit 108 and an unloading operation to unload the substrate 9 from the processing unit 108. Furthermore, the center robot 109 transports the substrate 9 between the plurality of processing units 108. The substrate 9 is transported in a horizontal position by the center robot 109. The center robot 109 receives the substrate 9 from the indexer robot 105 and passes the substrate 9 to the indexer robot 105.

[0018] FIG. 2 is a side view showing the configuration of the substrate processing apparatus 1. FIG. 2 depicts a cross section of a portion of the configuration of the substrate processing apparatus 1. The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates 9 one by one. The substrate processing apparatus 1 supplies a processing liquid to the substrates 9 to perform liquid processing. In this liquid processing, for example, foreign matter that has adhered to the substrates 9 during processing prior to being loaded into the substrate processing apparatus 1 is removed (i.e., cleaned). The foreign matter is, for example, residue that remains on the surface of the substrate 9 during a grinding process performed on the substrate 9. In the following description, the upper and lower sides in FIG. 2 will also be simply referred to as the "upper side" and "lower side."

[0019] The substrate processing apparatus 1 includes a substrate holding unit 2, a substrate rotation mechanism 33, a cup unit 4, a processing unit 51, a processing unit movement mechanism 52, a control unit 8, and a chamber 11. The substrate holding unit 2, the substrate rotation mechanism 33, the cup unit 4, the processing unit 51, etc. are housed in the internal space of the chamber 11. An airflow forming unit 12 is provided in the canopy of the chamber 11, and supplies gas to the internal space to form an airflow that flows downward (so-called downflow). For example, an FFU (fan filter unit) is used as the airflow forming unit 12.

[0020] The control unit 8 is disposed outside the chamber 11 and controls the substrate holder 2, the substrate rotation mechanism 33, the processing unit 51, the processing unit moving mechanism 52, and the like. As shown in FIG. 3 , the control unit 8 is, for example, a typical computer system including a processor 81, a memory 82, an input / output unit 83, and a bus 84. The bus 84 is a signal circuit connecting the processor 81, the memory 82, and the input / output unit 83. The memory 82 stores programs and various information. The processor 81 executes various processes (e.g., numerical calculations) using the memory 82 and the like in accordance with the programs and the like stored in the memory 82. The input / output unit 83 includes a keyboard 85 and a mouse 86 for receiving input from an operator, a display 87 for displaying output from the processor 81, and a transmitter (not shown) for transmitting output from the processor 81. The control unit 8 may be a programmable logic controller (PLC), a circuit board, or the like. The control unit 8 may include any combination of a computer system, a PLC, a circuit board, and the like.

[0021] The substrate holder 2 and the substrate rotation mechanism 33 are each part of a spin chuck that holds and rotates the substantially disk-shaped substrate 9. The substrate holder 2 holds the horizontally positioned substrate 9 from below. The substrate holder 2 is, for example, a Bernoulli chuck that adsorbs and holds the substrate 9 by using the Bernoulli effect. However, the substrate holder 2 may also be a chuck with a different structure.

[0022] FIG. 4 is a plan view showing the substrate holding unit 2. FIG. 5 is a cross-sectional view of the substrate holding unit 2 taken at position VV in FIG. 4. FIG. 6 is a cross-sectional view of the substrate holding unit 2 taken at position I of VI-V in FIG. 4. In FIGS. 5 and 6, the substrate 9 held by the substrate holding unit 2 is indicated by a two-dot chain line. As shown in FIGS. 4 to 6, the substrate holding unit 2 includes a base unit 21, a plurality of support pins 22, and a gas supply unit 23.

[0023] The base portion 21 is a substantially disk-shaped member centered on a central axis J1 extending in the up-down direction. The substrate 9 is disposed above the base portion 21 at a distance therefrom. An upper main surface 211 (hereinafter also referred to as the "base surface 211") of the base portion 21 faces a lower main surface (hereinafter also referred to as the "lower surface 92") of the substrate 9 in the up-down direction, at a position spaced downward from the lower main surface of the substrate 9. The base surface 211 of the base portion 21 and the lower surface 92 of the substrate 9 are substantially horizontal. The diameter of the base portion 21 is slightly larger than the diameter of the substrate 9, and the base surface 211 extends radially outward from the outer periphery of the substrate 9 all around.

[0024] The multiple support pins 22 are arranged on the outer periphery of the base surface 211 of the base portion 21, spaced apart from one another in the circumferential direction (hereinafter simply referred to as the "circumferential direction") around the central axis J1. The multiple support pins 22 are arranged on the same circumference around the central axis J1. The multiple support pins 22 are arranged, for example, at approximately equal angular intervals in the circumferential direction. In the example shown in FIG. 4, the number of the multiple support pins 22 is 30. The multiple support pins 22 are protrusions that protrude upward from the base surface 211. Each support pin 22 has, for example, an approximately hemispherical shape. The multiple support pins 22 are fixed to the base portion 21 and do not move relative to the base portion 21. In the substrate holding portion 2, the multiple support pins 22 contact the outer periphery of the lower surface 92 of the substrate 9 and support the substrate 9 from below. As a result, the substrate holder 2 contacts the outer periphery of the substrate 9 with the support pins 22, and holds the substrate 9 in a substantially horizontal state without contacting the center of the lower surface 92 of the substrate 9.

[0025] The gas supply unit 23 includes a plurality of gas outlets 232 provided in the base surface 211 of the base unit 21. The plurality of gas outlets 232 are arranged at positions overlapping with the substrate 9 in a plan view, spaced apart below the lower surface 92 of the substrate 9. The plurality of gas outlets 232 are arranged at positions radially outward from the central axis J1, spaced apart from one another in the circumferential direction. The plurality of gas outlets 232 are arranged on the same circumference about the central axis J1. The number of the plurality of gas outlets 232 is, for example, 150. The plurality of gas outlets 232 are arranged radially inward from the plurality of support pins 22. The plurality of gas outlets 232 are arranged below the outer periphery of the substrate 9. In the example shown in FIGS. 5 and 6 , the gas outlets 232 are provided on a radially inner side surface of an annular groove formed in the base surface 211 and having a substantially V-shaped cross section. The shape of the gas delivery ports 232 as viewed perpendicularly to the side surface is, for example, substantially circular. Each gas delivery port 232 is connected to a gas supply source 235 (see FIG. 7) described later via a gas flow path 231 provided inside the base portion 21.

[0026] In the gas supply unit 23, gas is delivered from a plurality of gas delivery ports 232 to a space between the lower surface 92 of the substrate 9 and the base surface 211 of the base unit 21 (hereinafter also referred to as the "lower space 90"). The gas is, for example, an inert gas such as nitrogen gas, or air. The gas is, for example, a high-pressure gas or a compressed gas. The gas delivered to the lower space 90 from the plurality of gas delivery ports 232 flows radially outward along the lower surface 92 of the substrate 9. As a result, an airflow is formed in the lower space 90 that flows radially outward from the radial center (hereinafter also simply referred to as the "center"), and a pressure drop occurs in the lower space 90 due to the Bernoulli effect of the airflow. As a result, the substrate 9 is adsorbed to the substrate holder 2. In other words, the air pressure in the lower space 90 becomes lower than the air pressure above the substrate 9 (i.e., it becomes negative pressure), and the difference in air pressure between the top and bottom of the substrate 9 presses the substrate 9 against the multiple support pins 22 of the substrate holder 2, fixing the position of the substrate 9 (i.e., holding the substrate 9). When the substrate 9 is held by the substrate holder 2, the base 21 and the multiple gas outlets 232 are spaced downward from the substrate 9 and are not in contact with the substrate 9.

[0027] 5 and 6, a portion of the gas flow path 231 provided inside the base portion 21 near the gas outlet 232 extends obliquely radially outward and upward toward the gas outlet 232. Therefore, the gas delivered from the gas outlet 232 to the lower space 90 flows radially outward and upward from the gas outlet 232, and flows radially outward approximately horizontally along the underside 92 of the substrate 9. As a result, as described above, an airflow is formed in the lower space 90 that flows radially outward from the center, and the substrate 9 supported from below by the plurality of support pins 22 is sucked downward by the Bernoulli effect and held by the substrate holder 2.

[0028] In the substrate holder 2, as the flow rate of gas delivered from the plurality of gas delivery ports 232 increases, the downward suction force acting on the substrate 9 increases. When the substrate 9 is not attached to the substrate holder 2, the substrate 9 can easily move upward away from the plurality of support pins 22, and can also move substantially horizontally while in contact with the plurality of support pins 22 (i.e., slide sideways on the plurality of support pins 22).

[0029] 4 and 6, the substrate holder 2 further includes a plurality of lift pins 24 and a plurality of centering pins 25. The plurality of lift pins 24 transfer the substrate 9 between them and the plurality of support pins 22 when the substrate 9 is carried in or out of the substrate processing apparatus 1. The plurality of centering pins 25 adjust the horizontal position of the substrate 9 by horizontally pushing the outer periphery of the substrate 9 placed on the plurality of support pins 22 and not being held by suction.

[0030] The multiple lift pins 24 are arranged on the outer periphery of the base surface 211 of the base portion 21, spaced apart from one another in the circumferential direction. The multiple lift pins 24 are arranged on the same circumference centered on the central axis J1. The multiple lift pins 24 are arranged, for example, at approximately equal angular intervals in the circumferential direction. In the example shown in FIG. 4, the number of multiple lift pins 24 is six. The multiple lift pins 24 are located slightly radially outward from the multiple support pins 22. The multiple lift pins 24 protrude upward from the base surface 211. Each lift pin 24 has, for example, a substantially cylindrical shape. A radially inner portion of the upper portion of the lift pin 24 is cut out, and this upper portion contacts the lower surface 92 and the outer peripheral edge (i.e., the side surface) of the substrate 9. In other words, the radially outer portion of the lift pin 24 is located radially outward from the outer peripheral edge of the substrate 9.

[0031] The plurality of lift pins 24 are movable in the vertical direction relative to the base surface 211 of the base portion 21. The plurality of lift pins 24 receive and hold the substrate 9 above the plurality of support pins 22. The plurality of lift pins 24 then descend together with the substrate 9, thereby transferring the substrate 9 to the plurality of support pins 22. The plurality of lift pins 24 also rise from below the plurality of support pins 22 to hold the substrate 9, and by further rising, the substrate 9 is transferred from the plurality of support pins 22 to the plurality of lift pins 24.

[0032] The centering pins 25 are arranged at intervals in the circumferential direction on the outer periphery of the base surface 211 of the base portion 21. The centering pins 25 are arranged on the same circumference centered on the central axis J1. The centering pins 25 are arranged, for example, at approximately equal angular intervals in the circumferential direction. In the example shown in FIG. 4, the number of centering pins 25 is six. The centering pins 25 are positioned slightly radially outward from the support pins 22 and the lift pins 24. The centering pins 25 are also positioned radially outward from the outer periphery of the substrate 9. Each of the centering pins 25 is a pin that protrudes upward from the base surface 211.

[0033] 6, the centering pin 25 includes a substantially cylindrical pin lower portion 251 and a substantially cylindrical pin upper portion 252 that protrudes upward from the upper end of the pin lower portion 251. The pin upper portion 252 is thinner than the pin lower portion 251 (i.e., has a smaller diameter in a cross section perpendicular to the up-down direction) and is fixed to the pin lower portion 251 at a position radially eccentric from the central axis J2 of the pin lower portion 251. The pin lower portion 251 is located below the lower surface 92 of the substrate 9 in the up-down direction. The pin upper portion 252 is located at approximately the same position as the substrate 9 in the up-down direction. The pin lower portion 251 and the pin upper portion 252 are located radially outward from the outer circumferential edge of the substrate 9. A radially inner portion of the pin lower portion 251 overlaps with the substrate 9 in a plan view. The pin upper portion 252 is radially spaced apart from the outer circumferential edge of the substrate 9 and faces the outer circumferential edge in the radial direction.

[0034] The pin lower portion 251 of each centering pin 25 is connected to a pin rotation mechanism 254 via a shaft 253 that passes through the base unit 21 in the vertical direction. The pin rotation mechanism 254 is, for example, an electric rotary motor. When the shaft 253 is rotated by the pin rotation mechanism 254, the centering pin 25 rotates about a central axis J2 that extends in the vertical direction on the base surface 211 of the base unit 21. This changes the radial position of the pin upper portion 252. In the substrate holding unit 2, each of the multiple centering pins 25 rotates with the pin upper portion 252 in contact with the outer periphery of the substrate 9, causing the substrate 9 to slide horizontally on the multiple support pins 22, and adjusting the horizontal position of the substrate 9.

[0035] As shown in FIGS. 4 to 6 , the substrate holding unit 2 further includes a separation plate 26. The separation plate 26 is a substantially annular member centered on the central axis J1 and surrounds the entire periphery of the substrate 9. The separation plate 26 is disposed radially outward from the outer periphery of the substrate 9 and is fixed onto the base surface 211 of the base unit 21. The inner periphery of the separation plate 26 is located radially outward from the outer periphery of the substrate 9 over its entire periphery. In plan view, a substantially annular annular gap 263 is provided between the inner periphery of the separation plate 26 and the outer periphery of the substrate 9. The radial width of the annular gap 263 is, for example, 1 mm or more and 2 mm or less.

[0036] The inner peripheral edge of separation plate 26 and the outer peripheral edge of substrate 9 are located at approximately the same position in the vertical direction. That is, the inner peripheral edge of separation plate 26 and the outer peripheral edge of substrate 9 face each other while being spaced apart from each other in the radial direction. An upper surface 261 of separation plate 26 is located at the same position in the vertical direction as the upper main surface of substrate 9 (hereinafter also referred to as "upper surface 91"), or slightly below the upper surface 91 of substrate 9. The upper surface 261 of separation plate 26 extends approximately horizontally radially outward from the inner peripheral edge of separation plate 26, and further extends radially outward and downward to reach the outer peripheral edge of separation plate 26. The outer peripheral edge of separation plate 26 approximately overlaps with the outer peripheral edge of base portion 21 (i.e., the outer peripheral edge of base surface 211) in a plan view.

[0037] The separation plate 26 is disposed at a position spaced above the base surface 211 of the base portion 21 and is fixed to the base surface 211 of the base portion 21 via a plurality of separation plate support portions 212. Each separation plate support portion 212 is, for example, a substantially cylindrical member protruding upward from the base surface 211 and connected to the lower surface 262 of the separation plate 26 to support the separation plate 26 from below. The plurality of separation plate support portions 212 are arranged at a distance from one another in the circumferential direction on the outer periphery of the base surface 211 of the base portion 21. The plurality of separation plate support portions 212 are, for example, disposed on the same circumference centered on the central axis J1. The plurality of separation plate support portions 212 are, for example, disposed at substantially equal angular intervals in the circumferential direction. The number of the plurality of separation plate support portions 212 is, for example, six. The plurality of separation plate support portions 212 are, for example, disposed at substantially the same circumferential positions as the plurality of centering pins 25. The circumferential position of the separation plate support portion 212 does not necessarily have to be the same as the circumferential position of the centering pin 25, and may be changed as appropriate. A substantially annular gap (hereinafter also referred to as an "annular flow path 264") is provided between the lower surface 262 of the separation plate 26 and the base surface 211 of the base portion 21.

[0038] In the example shown in FIG. 5 , the base surface 211 of the base portion 21 extends radially outward from the central axis J1 in a substantially horizontal manner and forms an inclined surface that extends radially outward and downward at the positions where the multiple gas outlets 232 are provided. The base surface 211 extends radially outward and upward from the lower end of the inclined surface and then extends radially outward in a substantially horizontal manner at the positions where the support pins 22 are provided. The base surface 211 forms an inclined surface that extends radially outward and downward at the radially outer side of the support pins 22. The inclined surface slopes sharply downward as it extends radially outward and is located substantially vertically below the outer periphery of the substrate 9. The base surface 211 forms a horizontal surface that extends radially outward in a substantially horizontal manner from the lower end of the inclined surface and faces the annular gap 263 and the lower surface 262 of the separation plate 26 in the vertical direction at a position spaced downward from the annular gap 263 and the separation plate 26. The base surface 211 is an inclined surface that extends radially outward and downward from the radially outer end of the horizontal surface, and reaches the outer peripheral edge of the base portion 21.

[0039] The lower surface 262 of the separator plate 26 extends radially outward and downward from the inner peripheral edge of the separator plate 26 to the outer peripheral edge of the separator plate 26. In other words, the lower surface 262 of the separator plate 26 is an inclined surface that extends radially outward and downward. In the example shown in FIG. 5 , the lower surface 262 of the separator plate 26 extends radially outward and downward from the inner peripheral edge of the separator plate 26, extends substantially vertically downward at the radial center of the separator plate 26, and further extends radially outward and downward to reach the outer peripheral edge of the separator plate 26. The vertical height of the annular flow path 264 (i.e., the vertical distance between the base surface 211 and the lower surface 262 of the separator plate 26) is substantially constant between the inner peripheral edge and the radial center of the separator plate 26, decreases sharply at the radial center of the separator plate 26, and is substantially constant between the radial center and the outer peripheral edge of the separator plate 26.

[0040] In the example shown in FIG. 5 , the vertical height of the lower space 90 at the radial position where the substrate 9 and the multiple support pins 22 contact each other (i.e., the vertical distance between the base surface 211 and the lower surface 262 of the substrate 9) is smaller than the vertical height of the annular flow path 264 at the inner peripheral edge of the separation plate 26. As described above, the base surface 211 has the steeply inclined surface 213 located substantially vertically below the outer peripheral edge of the substrate 9. Therefore, the lower space 90 increases in vertical height substantially vertically below the outer peripheral edge of the substrate 9 and continues to the annular flow path 264. In other words, the lower space 90 increases in vertical height radially outward from the multiple support pins 22 and radially inward from the inner peripheral edge of the separation plate 26 (i.e., near the annular gap 263) and continues to the annular flow path 264. Note that the inclined surface 213 may be located radially outward from the multiple support pins 22 and radially inward from the outer peripheral edge of the substrate 9.

[0041] As shown in FIG. 4, substantially semicircular openings 265 (i.e., notches) are formed in the inner peripheral edge of the separation plate 26 near each centering pin 25, and the centering pins 25 are arranged to fit into the openings 265. In the example shown in FIG. 6, the upper ends of the centering pins 25 are inserted into the openings 265 of the separation plate 26. The upper ends of the centering pins 25 are located at substantially the same position in the up-down direction as the area around the openings 265 on the upper surface 261 of the separation plate 26. The upper ends of the centering pins 25 may also be located lower than the area around the openings 265 on the upper surface 261 of the separation plate 26.

[0042] The substrate rotation mechanism 33 shown in FIG. 2 is disposed below the substrate holding unit 2. The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holding unit 2 about the central axis J1. The substrate rotation mechanism 33 includes a shaft 331 and a motor 332. The shaft 331 is a substantially cylindrical member centered on the central axis J1. The shaft 331 extends in the vertical direction and is connected to the center of the lower surface of the base unit 21 of the substrate holding unit 2. The motor 332 is an electric rotary motor that rotates the shaft 331. When the motor 332 rotates the shaft 331, the base unit 21 connected to the shaft 331 and the separation plate 26 fixed to the base unit 21 are rotated together. The substrate rotation mechanism 33 may include a motor having another structure (for example, a hollow motor, etc.).

[0043] The cup unit 4 includes an annular cup 41 centered on the central axis J1. The cup 41 is disposed around the entire circumference of the substrate 9 and the substrate holding unit 2, covering the sides of the substrate 9 and the substrate holding unit 2. The cup 41 is a liquid receiving container that receives liquid such as a processing liquid that splashes toward the surroundings from the rotating substrate 9. The cup 41 is stationary in the circumferential direction and does not rotate, regardless of whether the substrate holding unit 2 is rotating or stationary. A drain port (not shown) is provided at the bottom of the cup 41 to discharge the processing liquid received in the cup 41 to the outside of the chamber 11.

[0044] The cup 41 moves up and down by an elevating mechanism (not shown). The elevating mechanism includes, for example, an electric linear motor, an air cylinder, or a ball screw and an electric rotary motor. The cup unit 4 may include multiple cups 41 stacked in the radial direction. When the cup unit 4 includes multiple cups 41, each of the multiple cups 41 can move up and down independently, and the multiple cups 41 are switched to be used to receive the processing liquid depending on the type of processing liquid splashed from the substrate 9.

[0045] The processing unit 51 shown in FIG. 2 is a processing liquid supply unit that supplies a processing liquid (e.g., a cleaning liquid) to the upper surface 91 of the substrate 9. The processing unit 51 includes an upper nozzle 511 that ejects the processing liquid toward the upper surface 91 of the substrate 9. The upper nozzle 511 is, for example, a two-fluid nozzle that mixes the processing liquid with a gas and sprays the processing liquid toward the upper surface 91 of the substrate 9. In the processing unit 51, the processing liquid is pulverized by colliding with a high-speed gas flow, and the atomized particles are sprayed at high speed against the upper surface 91 of the substrate 9. This physically cleans the upper surface 91 of the substrate 9, removing foreign matter adhering to the upper surface 91 of the substrate 9. The processing liquid is, for example, DIW or CO2 water. The gas is, for example, an inert gas such as nitrogen gas, or air. The gas is, for example, a high-pressure gas or a compressed gas.

[0046] The processing section moving mechanism 52 is a swinging mechanism that swings the upper nozzle 511 of the processing section 51 approximately horizontally in the space above the substrate 9. The processing section moving mechanism 52 includes an arm 521 and an arm rotating mechanism 522. The arm 521 is a rod-shaped member that extends approximately horizontally. The upper nozzle 511 is fixed to one end of the arm 521, and the other end is connected to the arm rotating mechanism 522 that is positioned radially outside the cup section 4. The arm rotating mechanism 522 rotates the arm 521 approximately horizontally around a rotation axis that extends in the vertical direction.

[0047] The processing unit moving mechanism 52 reciprocates the upper nozzle 511, which discharges a processing solution onto the rotating substrate 9, between a first position that vertically faces the center of the upper surface 91 of the substrate 9 and a second position that is located radially outward from the first position. The second position is preferably vertically facing the outer periphery of the upper surface 91 of the substrate 9. This allows the above-mentioned physical cleaning process to be performed over substantially the entire upper surface 91 of the substrate 9. After the cleaning process is completed, the processing unit moving mechanism 52 moves the processing unit 51 from the space above the substrate 9 to a retracted position radially outward from the outer periphery of the substrate 9. The arm rotation mechanism 522 of the processing unit moving mechanism 52 includes, for example, an electric rotary motor. The processing unit moving mechanism 52 may have another structure.

[0048] FIG. 7 is a block diagram illustrating a configuration related to the supply of gas and liquid in the substrate processing apparatus 1. Each component in FIG. 7 is conceptually depicted and does not necessarily correspond to the structure of the substrate processing apparatus 1 shown in FIGS. 2, 4 to 6. The upper nozzle 511 is connected to a processing liquid supply source 515 via a pipe 513 and a valve 514. The upper nozzle 511 is also connected to a gas supply source 518 via a pipe 516 and a valve 517. In the processing unit 51, the control unit 8 (see FIG. 2) controls the opening of the valves 514 and 517, whereby the processing liquid and gas used in the cleaning process of the substrate 9 are supplied to the upper nozzle 511, which is a two-fluid nozzle, and the atomized processing liquid is sprayed from the upper nozzle 511 onto the upper surface 91 of the substrate 9.

[0049] The gas flow path 231 of the gas supply unit 23 is connected to a gas supply source 235 via a pipe 233 and a valve 234. In the substrate holder 2, the valve 234 is opened under the control of the control unit 8, whereby the gas used for adsorbing the substrate 9 is supplied to the gas flow path 231 and ejected from a plurality of gas outlets 232.

[0050] In addition, if the gas supplied to the upper nozzle 511 and the gas supplied to the gas flow path 231 of the substrate holding part 2 are of the same type, one gas supply source may be shared as the gas supply source 518 and the gas supply source 235.

[0051] FIG. 8 is a plan view showing an example of a substrate 9 processed by the substrate processing apparatus 1. FIG. 9 is a cross-sectional view of the substrate 9 in FIG. 8 taken along line IX-IX. In FIG. 9, the thickness of the substrate 9 is depicted as being thicker than it actually is. The substrate 9 illustrated in FIGS. 8 and 9 has a peripheral edge portion 94 and a main portion 95. In FIG. 8, the boundary between the peripheral edge portion 94 and the main portion 95 is indicated by a thin line. The peripheral edge portion 94 includes the outer peripheral edge of the substrate 9 and is a substantially annular portion extending along the outer peripheral edge in a planar view. The main portion 95 is a substantially circular portion located radially inward of the peripheral edge portion 94 in a planar view. The main portion 95 extends radially inward from the inner peripheral edge of the peripheral edge portion 94. The main portion 95 is completely surrounded by the peripheral edge portion 94. For example, the diameter of the substrate 9 is 300 mm, the diameter of the main portion 95 is 290 mm or more and 296 mm or less, and the width in the radial direction of the peripheral portion 94 is 2 mm or more and 5 mm or less.

[0052] The upper surface 91 of the substrate 9 is recessed downward in the main portion 95 relative to the peripheral portion 94. The lower surface 92 of the substrate 9 is located at approximately the same position in the up-down direction in the main portion 95 and the peripheral portion 94. That is, in the substrate 9, the space above the main portion 95 is a recess. The thickness of the substrate 9 in the main portion 95 is, for example, 200 μm or less. That is, the substrate 9 is a thin substrate with a thickness of 200 μm or less at the radial center. The thickness of the substrate 9 in the main portion 95 is, for example, 10 μm or more and 200 μm or less. The thickness of the substrate 9 in the peripheral portion 94 is, for example, 600 μm or more and 1000 μm or less. The substrate 9 is formed, for example, by grinding (i.e., grinding) a portion of a substrate having a substantially uniform thickness corresponding to the main portion 95.

[0053] FIG. 10 is a diagram showing a processing flow for a substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, first, the substrate 9 is held by the substrate holding unit 2 shown in FIG. 2 (step S11). As described above, the substrate holding unit 2 contacts the outer periphery of the lower surface 92 of the substrate 9 with the support pins 22 while not contacting the central portion of the lower surface 92 of the substrate 9, and holds the substrate 9 in a horizontal position by the Bernoulli effect of the gas delivered from the gas supply unit 23. In the substrate holding unit 2, the gas in the lower space 90 shown in FIG. 5 passes below the outer periphery of the substrate 9 and flows outward in the radial direction, passes below the annular gap 263, and flows into the annular flow path 264. The gas then flows radially outward in the annular flow path 264, flows outward in the radial direction from the outer periphery of the annular flow path 264 (i.e., the outer periphery of the substrate holding unit 2), and flows into the cup portion 4 (see FIG. 2).

[0054] 2, once the substrate 9 is held by the substrate holder 2, the substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holder 2 about the central axis J1 (step S12). Then, the upper nozzle 511 starts spraying the processing liquid onto the upper surface 91 of the rotating substrate 9. The processing unit moving mechanism 52 continuously moves the upper nozzle 511 back and forth between a first position that is vertically opposed to the center of the upper surface 91 of the substrate 9, and a second position that is positioned radially outward from the first position. The second position is, for example, a position that is vertically opposed to the circumference of an imaginary circle on which the multiple support pins 22 are arranged. This results in a physical cleaning process being performed on the upper surface 91 of the substrate 9 (step S13).

[0055] The processing liquid supplied to the upper surface 91 of the rotating substrate 9 moves from the center of the substrate 9 toward the outer periphery due to centrifugal force. The processing liquid moves from the outer periphery of the substrate 9, passing above the annular gap 263, and above the separation plate 26, and then moves radially outward along the upper surface 261 of the separation plate 26 or passing above the upper surface 261 of the separation plate 26. This prevents the processing liquid from moving below the lower surface 92 of the substrate 9, thereby preventing the processing liquid from adhering to the lower surface 92 of the substrate 9. The processing liquid that has moved radially outward on the separation plate 26 splashes radially outward from the outer periphery of the separation plate 26 (i.e., the outer periphery of the substrate holding unit 2) and is received by the cup unit 4.

[0056] As described above, the substrate processing apparatus 1 includes the substrate holding unit 2, the substrate rotation mechanism 33, and a processing liquid supply unit (i.e., the processing unit 51). The substrate holding unit 2 holds the substrate 9 in a horizontal position. The substrate rotation mechanism 33 rotates the substrate holding unit 2 about a central axis J1 extending in the vertical direction. The processing unit 51 supplies a processing liquid to the upper surface 91 of the substrate 9. The substrate holding unit 2 includes a base unit 21, a plurality of support pins 22, a gas supply unit 23, and an annular separation plate 26. The base unit 21 has a base surface 211. The base surface 211 faces the lower surface 92 of the substrate 9 and extends radially outward from the outer periphery of the substrate 9. The plurality of support pins 22 are arranged circumferentially on the base surface 211 and protrude upward from the base surface 211. The plurality of support pins 22 contact the outer periphery of the lower surface 92 of the substrate 9. The gas supply unit 23 supplies gas between the lower surface 92 of the substrate 9 and the base surface 211 of the base portion 21 to form an airflow that flows radially outward. The separation plate 26 is disposed on the base surface 211 of the base portion 21 radially outward from the outer periphery of the substrate 9, and surrounds the periphery of the substrate 9.

[0057] The inner peripheral edge of separation plate 26 and the outer peripheral edge of substrate 9 face each other while being spaced apart from each other in the radial direction. An upper surface 261 of separation plate 26 is located at the same position in the vertical direction as an upper surface 91 of substrate 9, or is located lower than the upper surface 91 of substrate 9. An annular flow path 264 is provided between a lower surface 262 of separation plate 26 and base surface 211 of base portion 21. Separation plate 26 is fixed to base portion 21, and is rotated together with base portion 21 by substrate rotation mechanism 33.

[0058] As a result, as described above, the gas flowing out radially outward from the lower space 90 between the substrate 9 and the base portion 21 passes below the annular gap 263, flows into the annular flow path 264, and flows radially outward. On the other hand, the processing liquid supplied to the upper surface 91 of the rotating substrate 9 passes above the annular gap 263, moves above the separation plate 26, passes above the separation plate 26, and splashes radially outward. Therefore, the processing liquid on the upper surface 91 of the substrate 9 or the processing liquid splashed from the outer peripheral edge of the substrate 9 can be prevented from flowing downward below the substrate 9, and therefore adhesion of the processing liquid to the lower surface 92 of the substrate 9 can be prevented.

[0059] As described above, the substrate holding part 2 preferably suctions the substrate 9 by creating a pressure drop in the space between the substrate 9 and the base part 21 (i.e., the lower space 90) due to the Bernoulli effect caused by the airflow. In this way, in the substrate processing apparatus 1 that holds the substrate 9 by a Bernoulli chuck, the lower space 90 becomes negative pressure, which makes it easier for the processing liquid to flow around to the underside of the substrate 9. As described above, the substrate processing apparatus 1 can prevent the processing liquid from flowing around to below the substrate 9, and therefore the structure of the substrate processing apparatus 1 is particularly suitable for substrate processing apparatuses that have a Bernoulli chuck.

[0060] As described above, the lower surface 262 of the separation plate 26 is preferably an inclined surface that slopes downward as it extends radially outward. This allows gas that flows out radially outward from the lower space 90 between the substrate 9 and the base portion 21 to be guided obliquely downward from near the outer periphery of the substrate 9. As a result, the suction force of the substrate 9 due to the Bernoulli effect can be increased, allowing the substrate 9 to be firmly held.

[0061] As described above, the vertical distance between the lower surface 92 of the substrate 9 and the base surface 211 at the radial position where the substrate 9 and the plurality of support pins 22 contact each other is preferably smaller than the vertical distance between the lower surface 262 of the separation plate 26 and the base surface 211 below the inner peripheral edge of the separation plate 26. In this manner, by increasing the cross-sectional area of ​​the flow path of the gas flowing radially outward from the lower space 90 between the substrate 9 and the base portion 21 near the outer peripheral edge of the substrate 9, the flow rate of the gas can be reduced. This makes it possible to suppress a pressure drop caused by the gas flow near the outer peripheral edge of the substrate 9 (i.e., near the annular gap 263). As a result, it is possible to suppress the processing liquid passing above the annular gap 263 from being sucked below the substrate 9 through the annular gap 263 due to the pressure drop. This further suppresses adhesion of the processing liquid to the lower surface 92 of the substrate 9.

[0062] As described above, the substrate holder 2 further includes a pin (centering pin 25 in the above example) that protrudes upward from the base surface 211 radially outward from the substrate 9. The upper end of the pin is inserted into the opening 265 provided in the separation plate 26, and the upper end of the pin is preferably located at the same vertical position as the area around the opening 265 on the upper surface 261 of the separation plate 26, or below this area. This prevents the processing liquid that has splashed radially outward from the outer periphery of the substrate 9 from colliding with the pin, and prevents the processing liquid from bouncing radially inward (i.e., toward the substrate 9) due to the collision with the pin. As a result, adhesion of the processing liquid to the lower surface 92 of the substrate 9 can be further suppressed.

[0063] The above-described substrate processing apparatus 1 can be modified in various ways.

[0064] For example, the number and shape of the support pins 22 are not limited to the above example and may be variously changed. The same applies to the lift pins 24 and the centering pins 25.

[0065] The upper ends of the centering pins 25 may be located above the area around the opening 265 on the upper surface 261 of the separation plate 26. In other words, the centering pins 25 may protrude upward from the upper surface 261 of the separation plate 26.

[0066] In the substrate holding unit 2, the number, shape, and arrangement of the gas outlets 232 are not limited to the above example and may be modified in various ways. For example, the number of gas outlets 232 may be one. In this case, for example, one gas outlet 232 having a substantially circular shape in plan view may be provided on the central axis J1 at a position vertically facing the center of the lower surface 92 of the substrate 9, or one gas outlet 232 having a substantially annular shape in plan view may be provided around the central axis J1.

[0067] In the substrate holder 2, the shape of the base surface 211 is not limited to the above example and may be modified in various ways. Furthermore, the shapes of the upper surface 261 and the lower surface 262 of the separation plate 26 are also not limited to the above example and may be modified in various ways. For example, the lower surface 262 of the separation plate 26 does not necessarily have to be a surface that slopes downward as it extends radially outward, but may also be a surface that extends approximately horizontally.

[0068] The height of the lower space 90 at the radial position where the substrate 9 and the plurality of support pins 22 contact each other may be equal to or greater than the height of the annular flow channel 264 below the inner peripheral edge of the separation plate .

[0069] In the substrate processing apparatus 1, when a lower nozzle is provided in the center of the base portion 21 (i.e., below the center of the substrate 9), gas may flow into the lower space 90 at a small flow rate from a gap between the lower nozzle and the base portion 21, etc., when a pressure drop occurs in the lower space 90 due to the Bernoulli effect.

[0070] In the substrate processing apparatus 1, the substrate holder 2 is not necessarily limited to a Bernoulli chuck, and may be, for example, a mechanical chuck, etc. In this case, the gas from the gas supply unit 23 is supplied to the radial center of the lower space 90, for example, to purge the lower space 90 with the gas, and forms an airflow directed radially outward.

[0071] 8 and 9, the substrate 9 processed by the substrate processing apparatus 1 does not necessarily have to be a substrate in which the main portion 95 is thinner than the peripheral portion 94, but may be, for example, a substrate whose thickness is substantially uniform over the entire surface. Furthermore, the thickness, diameter, and shape of the substrate 9 may be variously changed.

[0072] The substrate processing apparatus 1 may be used to process glass substrates used in flat panel displays such as liquid crystal displays or organic EL (Electro Luminescence) displays, or glass substrates used in other displays, in addition to semiconductor substrates. The substrate processing apparatus 1 may also be used to process substrates for optical disks, magnetic disks, magneto-optical disks, photomasks, ceramic substrates, and solar cell substrates.

[0073] The configurations in the above-described embodiment and each modification may be combined as appropriate as long as they are not mutually contradictory. [Explanation of symbols]

[0074] 1. Substrate processing equipment 2 Board holding part 9 Substrate 21 Base 22 Support pin 23 Gas supply section 25 Centering pin 26 Separation plate 33 Substrate rotation mechanism 51 Processing section 90 Downward space 91 (board) top surface 92 (board) bottom 211 base surface 252 pin top 261 (of the separation plate) upper surface 262 (of the separation plate) 264 Annular Channel 265 Opening J1 center axis

Claims

1. A substrate processing apparatus for processing a substrate, a substrate holder that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holder about a central axis facing in the vertical direction; a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate; Equipped with The substrate holder includes: a base portion having a base surface facing a lower surface of the substrate and extending radially outward from an outer peripheral edge of the substrate; a plurality of support pins arranged in a circumferential direction on the base surface, protruding upward from the base surface, and contacting an outer periphery of the lower surface of the substrate; a gas supply unit that supplies gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward; an annular separation plate disposed radially outward of the outer circumferential edge of the substrate on the base surface of the base portion and surrounding the periphery of the substrate; Equipped with an inner peripheral edge of the separation plate and the outer peripheral edge of the substrate face each other while being spaced apart from each other in the radial direction, an upper surface of the separation plate is located at the same position as the upper surface of the substrate in the vertical direction or lower than the upper surface of the substrate, an annular flow path is provided between the lower surface of the separation plate and the base surface of the base portion, the separation plate is fixed to the base portion and rotated together with the base portion by the substrate rotation mechanism, A substrate processing apparatus characterized in that the base surface is located radially outward from the plurality of support pins and radially inward from the inner peripheral edge of the separation plate, below the outer peripheral edge of the substrate, and has an inclined surface that slopes downward as it extends radially outward.

2. The substrate processing apparatus according to claim 1 , The substrate holding unit attracts the substrate by suction by generating a pressure drop in a space between the substrate and the base unit due to the Bernoulli effect caused by the airflow.

3. 3. The substrate processing apparatus according to claim 2, The substrate processing apparatus according to claim 1, wherein the lower surface of the separation plate is an inclined surface that slopes downward as it extends radially outward.

4. 4. The substrate processing apparatus according to claim 1, A substrate processing apparatus characterized in that the vertical distance between the lower surface of the substrate and the base surface at a radial position where the substrate and the multiple support pins contact is smaller than the vertical distance between the lower surface of the separation plate and the base surface below the inner peripheral edge of the separation plate.

5. 5. The substrate processing apparatus according to claim 1, the substrate holding portion further includes a pin protruding upward from the base surface radially outward of the substrate, The upper end of the pin is inserted into an opening provided in the separation plate, The substrate processing apparatus, wherein the upper ends of the pins are located at the same vertical position as a region around the opening on the upper surface of the separation plate or below the region.

6. A substrate processing apparatus for processing a substrate, comprising: a substrate holder that holds the substrate in a horizontal state; a substrate rotation mechanism that rotates the substrate holder about a central axis facing in the vertical direction; a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate; Equipped with The substrate holder includes: a base portion having a base surface facing a lower surface of the substrate and extending radially outward from an outer peripheral edge of the substrate; a plurality of support pins arranged in a circumferential direction on the base surface, protruding upward from the base surface, and contacting an outer periphery of the lower surface of the substrate; a gas supply unit that supplies gas between the lower surface of the substrate and the base surface of the base unit to form an airflow that flows radially outward; an annular separation plate disposed radially outward of the outer circumferential edge of the substrate on the base surface of the base portion and surrounding the periphery of the substrate; Equipped with an inner peripheral edge of the separation plate and the outer peripheral edge of the substrate face each other while being spaced apart from each other in the radial direction, an upper surface of the separation plate is located at the same position as the upper surface of the substrate in the vertical direction or lower than the upper surface of the substrate, an annular flow path is provided between the lower surface of the separation plate and the base surface of the base portion, the separation plate is fixed to the base portion and rotated together with the base portion by the substrate rotation mechanism, the substrate holding portion further includes a pin protruding upward from the base surface radially outward of the substrate, The upper end of the pin is inserted into an opening provided in the separation plate, The substrate processing apparatus, wherein the upper ends of the pins are located at the same vertical position as a region around the opening on the upper surface of the separation plate or below the region.

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