Monitoring equipment capable of measuring large areas

Abstract

A monitoring device capable of large-area measurement that can easily diagnose device performance in semiconductor or display processes is provided. [Solution] Alternatively, the monitoring device includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, and the monitoring device diagnoses an object to be diagnosed located outside the monitoring device by measuring at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element using the sensor, and an intaglio or embossed structure is formed on the substrate, and the intaglio structure is filled with a material having properties different from those of the substrate, or the embossed structure is formed of a material having properties different from those of the substrate.

Description

[Technical Field]

[0001] The present invention relates to a monitoring device capable of large-area measurement, and more particularly to a monitoring device capable of large-area measurement that can easily diagnose device performance in semiconductor or display processes. [Background technology]

[0002] Semiconductors and displays are being developed in line with the trend toward larger diameters. Maintaining process uniformity within semiconductor devices during semiconductor and display manufacturing is a key factor in reducing defects. Although semiconductor devices and display devices must maintain the same level of process uniformity for each process, performance can change over time due to countless cycles of temperature rise and fall, RF power on / off, and pressure rise and fall. Changes in the process conditions of semiconductor devices or display devices can cause defects in wafers or glass substrates, but there is currently no technology that can accurately monitor such changes in process conditions. Summary of the Invention [Problem to be solved by the invention]

[0003] An object of the present invention is to provide a monitoring device capable of large-area measurement that can easily diagnose the performance of devices in semiconductor or display processes. [Means for solving the problem]

[0004] In order to achieve the above-mentioned object, a monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, and the monitoring device diagnoses an object to be diagnosed located outside the monitoring device by using the sensor to measure at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element;the substrate is a printed circuit board; A recessed or embossed structure is formed on the substrate; To improve the flatness of the substrate The recessed structure is filled with a material having properties different from those of the substrate, or the recessed structure is formed of a material having properties different from those of the substrate.

[0005] The monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, and at least one electronic element arranged on the substrate, wherein the electronic element has at least one sensor, and the monitoring device diagnoses an object to be diagnosed located outside the monitoring device by using the sensor to measure at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element; the substrate is a printed circuit board; a recessed or embossed structure is formed on the protective layer; To improve the flatness of the protective layer The recessed structure is filled with a material having properties different from those of the protective layer, or the recessed structure is formed of a material having properties different from those of the protective layer.

[0006] The monitoring device of the present invention includes a protective layer, a substrate arranged in a space inside the protective layer, at least one electronic element arranged on the substrate, and a member arranged outside the protective layer to provide doubly protection for the electronic element together with the protective layer, wherein the electronic element has at least one sensor, and the monitoring device diagnoses the object to be diagnosed by using the sensor to measure at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and the distance between the object to be diagnosed located outside the monitoring device. [Effects of the Invention]

[0007] The monitoring device according to the present invention can improve the flatness of the monitoring device by forming an intaglio structure or a relief structure on a printed circuit board or a protective layer, thereby enabling a temperature sensor arranged on the printed circuit board to be in close contact with an object to be diagnosed, compensating for horizontal alignment of a vibration sensor and a displacement sensor arranged on the printed circuit board to improve measurement accuracy, preventing axial misalignment of an RF sensor arranged on the printed circuit board with an object to be diagnosed, improving the light receiving sensitivity of an optical sensor arranged on the printed circuit board, and improving the transmitting and receiving sensitivity of a wireless communication device arranged on the printed circuit board. Furthermore, it is possible to prevent the monitoring device from being misaligned from the axis of the robot device that automatically transports the monitoring device, thereby preventing damage to the monitoring device or the semiconductor device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a diagram illustrating a monitoring device installed in a chamber according to the present invention. [Figure 2] 1 is a diagram illustrating a monitoring device arranged on an electrostatic chuck of the present invention. [Figure 3] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 4] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 5] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 6] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 7] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 8] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 9] 1 is a diagram illustrating a monitoring device of the present invention. [Figure 10] 1 is a diagram illustrating problems that may occur in the structure of a large-area measurement system. [Figure 11]1 is a diagram illustrating an intaglio or embossed structure for reducing tensile and compressive stresses. [Figure 12] 1 is a diagram illustrating tensile stress or compressive stress that can occur in a large-area measuring device. [Figure 13] 10 is a diagram illustrating an example of an error occurring due to stress during robot transportation. [Figure 14] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. [Figure 15] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. [Figure 16] 1 is a diagram illustrating the degradation of measurement accuracy due to tensile stress. DETAILED DESCRIPTION OF THE INVENTION

[0009] As used herein, singular expressions include plural expressions unless the context clearly dictates otherwise. In this specification, terms such as "comprise" or "include" should not be interpreted as including all of the components or steps described in the specification, but should be interpreted as meaning that some components or steps may not be included, or that additional components or steps may be included. Furthermore, terms such as "unit," "module," etc. used in the specification refer to a unit that processes at least one function or operation, and may be embodied in hardware or software, or a combination of hardware and software.

[0010] The present invention relates to a monitoring device for effectively diagnosing a large-area object to be diagnosed, and is capable of detecting an abnormal state of an electrostatic chuck used in, for example, a semiconductor process or a display process. For example, the monitoring equipment may measure the temperature, electrostatic force, or degree of tilt of the electrostatic chuck. As another example, the monitoring device may measure a vibration state within the semiconductor or display device or a distance between a showerhead and an electrostatic chuck, for example, the monitoring device may measure a vibration state of a wafer when the wafer is transferred using a cassette. As yet another example, the monitoring device may measure the voltage, current, or power applied within the semiconductor or display chamber, or may measure the amount of light from the plasma within the semiconductor or display chamber. Such monitoring devices have a structure for effectively measuring a large area, specifically, an arrangement of recessed or engraved structures can be used to compensate for tensile stress, compressive stress, or thermal stress, and a microprocessor, wireless communication device, wireless charging device, sensor, etc. can be arranged on a printed circuit board, thereby effectively protecting electronic elements such as wireless communication devices and minimizing contamination of the device.

[0011] The present invention will now be described in detail with reference to the drawings. FIG. 1 is a diagram illustrating a monitoring device installed in a chamber of the present invention, and FIG. 2 is a diagram illustrating a monitoring device arranged on an electrostatic chuck of the present invention. FIG. 3 is a diagram illustrating a monitoring device of the present invention, and FIGS. 4 to 9 are diagrams illustrating monitoring devices of the present invention. FIG. 10 is a diagram illustrating problems that may occur in the structure of a large-area measurement system, FIG. 11 is a diagram illustrating an intaglio or embossed structure for reducing tensile and compressive stresses, and FIG. 12 is a diagram illustrating tensile or compressive stresses that may occur in a large-area measurement device. FIG. 13 is a diagram illustrating an example of an error caused by stress during robot transportation, and FIGS. 14 to 16 are diagrams illustrating degradation of measurement accuracy due to tensile stress.

[0012] As shown in FIG. 1, an electrostatic chuck 112 is formed at the lower end of the interior of a chamber 110 in which a plasma process is performed, and a monitoring device 100 is arranged on the upper surface of the electrostatic chuck 112 . The monitoring device 100 determines whether or not there is an abnormality in the electrostatic chuck 112 before a semiconductor or display process is started, and if it is determined that there is no abnormality in the electrostatic chuck 112, the monitoring device 100 can be removed and the actual process can be performed. For example, after the monitoring device 100 is removed, a wafer for a deposition process, an etching process, an implant process, or a photo process can be placed on the electrostatic chuck 112. The monitoring device 100 can measure the distance between the electrostatic chuck 112 and the showerhead 113 . The monitoring device 100 can measure the RF voltage, current, or power within the chamber 110 . The monitoring device 100 can also measure vibration conditions within the chamber and optically measure the characteristics of the plasma within the chamber.

[0013] Hereinafter, problems and solutions when measuring a large area of ​​a diagnostic object using such a monitoring device 100 will be discussed in detail. As shown in Fig. 12, depending on the material properties of the monitoring device, the substrate of the monitoring device may bend due to the effects of compressive stress 401 and tensile stress 402. This substrate bending phenomenon may cause the sensor 214 of the monitoring device to deviate from the desired alignment direction, as shown in Fig. 10, thereby reducing the measurement accuracy of the sensor 214, reducing the communication performance of the wireless communication device 211, and reducing the charging performance of the wireless charging device 212 for charging the power supply device 213. Also, as shown in FIG. 14, the sensor 214 may not be tightly attached to the electrostatic chuck 112 due to the bending of the substrate, which may result in a decrease in the accuracy of temperature measurement. Furthermore, when measuring the distance between the electrostatic chuck 112 and the showerhead 113, the axis of the sensor 214 may be twisted, resulting in a decrease in measurement accuracy. Furthermore, as shown in FIG. 15, the direction of RF power emission and the direction of reception of the sensor 214 may become twisted, reducing the accuracy of measuring RF voltage, current, or power. Also, as shown in FIG. 13, the monitoring device may bend while being transported using a robot 310, which may result in malfunction or damage to the monitoring device.

[0014] To solve this problem, the monitoring device 100 may have a structure that can prevent the substrate from bending. Specifically, the monitoring device 100 of this embodiment may include a printed circuit board 205 and at least one microprocessor 210, a wireless communication device 211, a wireless charging device 212, a power supply device 213, and at least one sensor 214 arranged on the printed circuit board 205. That is, multiple electronic elements may be arranged on the printed circuit board 205. The printed circuit board 205 and the electronic components may be arranged in the protective layer 201, and the printed circuit board 205 and the electronic components may be covered by the electromagnetic wave shielding layer 204 within the protective layer 201. As a result, the electromagnetic wave shielding layer 204 may be formed on the top or bottom of the printed circuit board 205 on which the electronic components are arranged. The protective layer 201 can block pollutants emitted from the monitoring device 100, prevent deterioration of the performance and quality of the monitoring device 100 due to external factors such as heat and moisture, and can mechanically strengthen the rigidity to prevent impacts and scratches. Furthermore, the protective layer 201 can adjust the flatness and roughness of the surface through mechanical processing or chemical polishing according to the measurement environment to ensure the measurement accuracy of the monitoring device 100 . The monitoring device 100 may be provided with a structure for preventing bending or improving flatness.

[0015] 3, an intaglio structure 202 is formed on a printed circuit board 205, and the intaglio structure 202 is filled with a material that exhibits an opposite stress, thereby compensating for the stress and improving the flatness of the board. For example, since the tensile strength of the printed circuit board 205 decreases as the temperature increases, the flatness of the printed circuit board 205 can be improved by filling the intaglio structure 202 with a material that can improve the tensile strength. The engraved structure 202 can be filled with a metal material such as copper, aluminum, silver, or gold, or a material such as silicon, silicon carbide, or oxide, which has a higher thermal conductivity than the printed circuit board 205, to improve tensile strength.

[0016] As shown in FIG. 4, a relief structure 203 made of materials with different heat transfer coefficients is formed on a printed circuit board 205 to improve the tensile strength and flatness of the board. 5, the flatness can be improved by forming an intaglio structure 206 on the protective layer 201 and filling the intaglio structure 206 with a material having stress characteristics opposite to those of the protective layer 201. For example, if the protective layer 201 is made of an oxide, the tensile strength is weak due to the characteristics of the oxide. Therefore, the stress can be compensated for by filling the intaglio structure 206 with a nitride, which can improve the tensile strength. Also, as shown in FIG. 6, the aspect ratio stress can be improved by forming a relief structure 207 made of a material with a different heat transfer coefficient on the protective layer 201.

[0017] 7 and 8, a member 208 for protecting the electronic elements from the external environment may be disposed on at least a portion of the protective layer 201. As a result, the electronic elements inside the monitoring device 100 may be doubly protected from the external environment. For example, the monitoring device 100 may be protected from process gases and plasma flowing into a semiconductor device or a display device. For example, the temperature measurement accuracy can be improved by forming the member 208 from a material with a thermal conductivity similar to that of silicon. As another example, when measurements are taken in a high temperature environment, the member 208 can be formed of a material with low thermal conductivity to protect electronic elements that are sensitive to heat. Additionally, as shown in FIG. 9, pockets 209 may be arranged in member 208 to protect electronic components that are sensitive to certain environments. For example, when measurements are made in a high-temperature environment, the pocket 209 can be filled with a substance having low thermal conductivity to protect electronic elements that are vulnerable to high temperatures. Furthermore, an elastic material can be arranged inside the pocket 209 to protect electronic elements that are vulnerable to vibration.

[0018] An electromagnetic wave shielding layer 204 may surround the electronic elements in the protective layer 201 to prevent electromagnetic waves from penetrating into the electronic elements. Positionally, at least one electromagnetic wave shielding layer 204 may be located on the top and bottom of the printed circuit board 205. The electromagnetic wave shielding layer 204 is formed of a sputtered metal material (nickel, silver, gold, etc.) or a liquid metal or metal spray method, an electromagnetic wave shielding film, or a mesh-type electromagnetic wave shielding film that protects internal electronic components from electromagnetic waves generated by plasma. Alternatively, a multi-layer printed circuit board can be used as the electromagnetic wave shielding layer 204 by forming the entire area of ​​the top and bottom layers with a material used for wiring (for example, copper, silver, gold, etc.). Furthermore, the electromagnetic wave shielding layer 204 may be made of a metal material such as copper, nickel, aluminum, gold, silver, or a plurality of alloy materials, may be made of a spray coating made of the material, may be made of a film tape made of the material, may be made of a liquid metal made of the material, may be realized by a sputtering semiconductor process, may be made of a sheet paper made of the material, and the sheet paper may be made in a form that blocks the entire surface or in a mesh form.

[0019] A portion of the electromagnetic wave shielding layer 204 corresponding to the wireless communication device 211 may be opened to facilitate wireless communication. Also, a portion of the electromagnetic wave shielding layer 204 corresponding to the electrical sensor may be opened. The protective layer 201 and member 208, which may be the surface layer of the monitoring device, may be formed of a material that can be introduced into the chamber, such as a silicon-based material, an oxide-based material, a ceramic-based material, an engineering plastic, or Teflon. The microprocessor 210 may be formed on or under the printed circuit board 205 and may control the operation of the wireless communication device 211 , the wireless charging device 212 or at least one sensor 214 . The microprocessor 210 can collect data sensed by various sensors 214 and transfer the collected data to an external device (not shown) via a wireless communication device 211 . Furthermore, the microprocessor 210 can receive user setting values ​​set by a user via the wireless communication device 211 and control the internal electronic elements according to the received user setting values.

[0020] The entire area of ​​the printed circuit board 205, excluding the wiring and element footprints, can be used as a ground plane, resulting in excellent noise reduction. In addition, this ground plane can be used as the electromagnetic wave shielding layer 204. The wireless communication device 211 is a connection path for wirelessly communicating with the external device and may be arranged on the printed circuit board 205. The wireless communication device 211 may transmit sensing data including temperature information, tilt information, vibration information, electrical information, etc. sensed by the sensor 214 to the external device. At this time, the external device may analyze the transmitted sensing data to determine whether or not there is an abnormality in the electrostatic chuck 112. The wireless charging device 212 can wirelessly charge the power supply device 213 built into the printed circuit board 205.

[0021] The sensor 214 is formed on the printed circuit board 205 and can measure the temperature, tilt, vibration, voltage and current generated by the plasma, the optical wavelength of the plasma, the distance between the upper and lower electrodes of the semiconductor device, or the DC voltage and current of the electrostatic force of the electrostatic chuck 112. The sensor 214 may be a temperature sensor for measuring temperature, a gyroscope for measuring tilt, or a vibration sensor for measuring vibration. The sensor 214 may also be a capacitor or inductor for measuring voltage and current, an electrical sensor for electrical measurements, an optical sensor for measuring the optical wavelength of the plasma, or a displacement sensor for measuring the distance between the electrodes.

[0022] In summary, the monitoring device 100 of the present invention is arranged on the electrostatic chuck 112 and can diagnose abnormal conditions of the electrostatic chuck 112 by measuring the temperature, tilt, vibration, voltage or current, inter-electrode distance, etc. of the electrostatic chuck 112. The monitoring device 100 can also diagnose abnormal conditions of the RF voltage, current, power applied to the semiconductor or display chamber 100 and the plasma optical wavelength applied to the chamber. If the electrostatic chuck 112 and the chamber 110 are determined to be in an abnormal state, appropriate measures can be taken to prevent major damage. In particular, the electrostatic chuck 112 is a component that holds a wafer and is directly related to the process results, so if the designed parameters are not maintained, all wafers processed on it must be discarded. The chamber 110 is a space in which wafer processes are performed and is directly related to the process results, so if the designed parameters are not maintained, all wafers processed on it must be discarded. By diagnosing such problems in advance, major damage can be prevented. Furthermore, since the monitoring device 100 has improved flatness by controlling the tensile strength and compressive strength, a robot can be inserted into the chamber 110 and place the monitoring device 100 on the electrostatic chuck 112 to perform process diagnosis without opening the chamber 110. If the flatness of the monitoring device 100 is low, as shown in FIG. 13 , the monitoring device 100 may shift when moved by the robot and may not be able to pass through the insertion opening, which may cause a problem in which the monitoring device 100 cannot be properly aligned on the electrostatic chuck 112. However, the flatness of the monitoring device 100 can be freely controlled depending on the measurement element, measurement method, and measurement environment.

[0023] Meanwhile, in the above description, abnormal conditions of the electrostatic chuck and the semiconductor chamber or display chamber are detected, but the monitoring device 100 can also be used to diagnose the temperature, tilt, or vibration level of a baking chuck in a photo process, the temperature, tilt, voltage, or vibration level of a chuck performed in an implant device, the temperature of a high-temperature chuck performed in a deposition process, etc. The temperature of the high-temperature chuck can be measured remotely. The monitoring device 100 can also be used to measure the temperature, vibration, or tilt of a photomask used in an exposure process. In this case, the monitoring device 100 can have the same structure as described above. Additionally, the monitoring device 100 may not be in physical contact with the electrostatic chuck 112. The monitoring device 100 may be capable of contactlessly monitoring the temperature of the high temperature chuck on the lift pins of the chuck to diagnose the high temperature chuck during the deposition process. Furthermore, the monitoring device 100 can be used to diagnose an object to be diagnosed using an optical sensor that detects light or an electrical sensor that measures electrical components. In this case, the monitoring device 100 having the above-described structure is used to mount the optical sensor, but a light-receiving sensor for receiving light can be included, and a hole through which light can pass can be formed in the monitoring device 100.

[0024] In addition, in order to mount the electrical sensor, the electrical sensor may be built into the monitoring device 100, and a hole through which an electrical component can pass may be formed in the monitoring device 100. That is, as long as the monitoring device 100 uses a wafer with pockets formed therein and various elements such as sensors are mounted in the pockets, it can be used in various steps of a semiconductor process or a display process. Furthermore, an adhesive layer may be formed to attach the printed circuit board 205 and the member 208. In this case, the protective layer 201 may also function as the adhesive layer. In addition, an intaglio or embossed pattern may be formed on the member 208 to compensate for stress applied vertically and horizontally. Here, the pattern may be formed of a material capable of compensating for the thermal expansion coefficient, such as thermosetting resin, engineering plastic, ceramic, silicon, or microwire.

[0025] Meanwhile, the components of the above-described embodiments can be easily understood from a process perspective. That is, each component can be understood in terms of its own process. Furthermore, the processes of the above-described embodiments can be easily understood from the perspective of the components of the device. The above-described embodiments of the present invention have been disclosed for illustrative purposes, and those skilled in the art having ordinary skill in the art may make various modifications, changes, and additions within the spirit and scope of the present invention, and such modifications, changes, and additions should be considered to fall within the scope of the following claims. [Explanation of symbols]

[0026] 100 Monitoring Equipment 110 Chamber 112 Electrostatic Chuck 113 shower head 201 Protective layer 202 Intaglio structure 204 Electromagnetic shielding layer 205 Printed Circuit Board 206 Intaglio structure 208 Components 209 Pocket 210 Microprocessor 211 Wireless communication equipment 213 Power Supply 214 Sensors 310 Robot 401 Compressive Stress 402 Tensile Stress

Claims

1. In monitoring equipment, A protective layer; a substrate arranged in the space inside the protective layer; at least one electronic element arranged on the substrate; The electronic element has at least one sensor, and the monitoring device diagnoses the object to be diagnosed by measuring at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element of an object to be diagnosed located outside the monitoring device using the sensor; the substrate is a printed circuit board; a recessed structure or a relief structure is formed on the substrate, and the recessed structure is filled with a material having properties different from those of the substrate so as to improve the flatness of the substrate, or the relief structure is formed of a material having properties different from those of the substrate.

2. The recessed structure is filled with a material capable of compensating for the tensile or compressive force of the substrate, or the recessed structure is formed of a material capable of compensating for the tensile or compressive force of the substrate; 2. The monitoring device of claim 1, wherein the flatness of the substrate is improved by compensating for the tensile or compressive force.

3. 10. The monitoring device of claim 1, wherein the different property is a coefficient of thermal expansion.

4. the material filled in the recessed structure has a thermal expansion coefficient higher than that of the substrate, and is selected from the group consisting of thermosetting resin, engineering plastic, silicon, copper, aluminum, gold, and silver; 4. The monitoring device according to claim 3, wherein the material of the relief structure is a material having a thermal expansion coefficient higher than that of the substrate, and is selected from the group consisting of thermosetting resin, engineering plastic, silicon, copper, aluminum, gold, and silver.

5. The electronic device further includes an electromagnetic wave blocking layer that surrounds the substrate and the electronic device and blocks electromagnetic waves from entering from the outside. the electronic element further includes a microprocessor, a wireless communication device, and a wireless charging device in addition to the sensor; The monitoring device of claim 1, wherein the microprocessor collects data measured by the sensor and transmits it to an external device via the wireless communication device, and the wireless charging device charges a battery within the board.

6. 10. The monitoring device of claim 1, wherein the protective layer is made of silicon, oxide, ceramic, or carbon.

7. Further comprising a member arranged outside the protective layer, The monitoring device according to claim 1, wherein the member is formed of a material having temperature characteristics or thermal conductivity characteristics different from those of the protective layer, thereby improving the accuracy of temperature measurement or protecting electronic elements that are sensitive to heat.

8. The monitoring device of claim 7, wherein a pocket is formed in the member, and the pocket is filled with a material having a thermal conductivity different from that of the member, or an elastic material is arranged inside the pocket.

9. 2. The monitoring device according to claim 1, wherein the object to be diagnosed is an electrostatic chuck, and the sensor measures the temperature, tilt, voltage, current, or vibration level of the electrostatic chuck.

10. A monitoring device as described in Claim 1, characterized in that the area of ​​the substrate excluding the wiring and the footprint of the electronic elements is used as a ground surface.

11. a wireless communication element, a light receiving sensor, or an electrical sensor is arranged on the substrate; The monitoring device according to claim 1 , wherein a hole is formed in the protective layer at a portion corresponding to the wireless communication element, the light receiving sensor, or the electrical sensor.

12. In monitoring equipment, A protective layer; a substrate arranged in the space inside the protective layer; at least one electronic element arranged on the substrate; The electronic element has at least one sensor, and the monitoring device diagnoses the object to be diagnosed by measuring at least one of temperature, tilt, light, vibration, voltage, current, power, pressure, and a distance between the object to be diagnosed and another element of an object to be diagnosed located outside the monitoring device using the sensor; the substrate is a printed circuit board; A monitoring device characterized in that an intaglio structure or a relief structure is formed on the protective layer, and the intaglio structure is filled with a material having different properties from the protective layer so as to improve the flatness of the protective layer, or the relief structure is formed of a material having different properties from the protective layer.

13. The recessed structure is filled with a material capable of compensating for the tensile or compressive force of the protective layer, or the recessed structure is formed of a material capable of compensating for the tensile or compressive force of the protective layer; 13. The monitoring device of claim 12, wherein the flatness of the protective layer is improved by compensating for the tensile or compressive force.

14. 13. The monitoring device of claim 12, wherein the material filled in the recessed structure or forming the embossed structure has stress characteristics opposite to those of the protective layer, and is selected from the group consisting of nitride, carbon material, and silicon.

15. Further comprising a member arranged outside the protective layer, The monitoring device of claim 12, wherein the member is formed of a material having temperature characteristics or thermal conductivity characteristics different from those of the protective layer, thereby improving temperature measurement accuracy or protecting electronic elements that are sensitive to heat.

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