Method for evaluating primary optical system of electron beam observation device, evaluation device used therefor, and manufacturing method thereof

Abstract

To evaluate the deviation of an electron beam trajectory in a primary optical system of an electron beam observation device.SOLUTION: An evaluation method includes irradiating an irradiation target with a primary electron beam generated by a multi-beam generation mechanism with multiple apertures, obtaining a first image including a first pattern corresponding to each of the apertures formed by a secondary electron beam from the irradiation target (S1), calculating a first deviation amount between the position of the first pattern in the first image and the target position (S2), irradiating a plurality of photoelectric conversion portions corresponding to the plurality of apertures of the multi-beam generation mechanism installed on the stage with light to obtain a second image including a second pattern corresponding to each photoelectric conversion portion formed by an electron beam from the photoelectric conversion portion (S3), calculating a second shift amount between the position of the second pattern in the second image and the target position (S4), and obtaining the deviation of the trajectory of a primary electron beam in the primary optical system on the basis of the first deviation amount and the second deviation amount (S5).SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a method for evaluating a primary optical system of an electron beam observation apparatus, an evaluation device used for the method, and a manufacturing method thereof. [Background technology]

[0002] An electron beam observation device is known that irradiates an electron beam onto a sample and observes the electron beam emitted from the sample (for example, Patent Document 1). The electron beam observation device is composed of a primary optical system that irradiates a primary electron beam onto the sample and a secondary optical system that detects a secondary electron beam generated from the sample as an image.

[0003] High throughput can be achieved by using multiple electrons in the primary electron beam in the primary optical system. In such electron beam observation systems, it is important to irradiate the primary electron beam at the correct position on the sample. If electrons are irradiated at a position that is not appropriate, image overlap and inspection omissions can occur. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2000-48755 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention makes it possible to evaluate deviations in the trajectory of an electron beam in a primary optical system of an electron beam observation device. [Means for solving the problem]

[0006] According to one aspect of the present invention, [1] A method for evaluating deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation apparatus including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: a step of irradiating an irradiation target with a primary electron beam generated by a multi-beam generating mechanism having a plurality of apertures, and acquiring a first image formed by secondary electron beams from the irradiation target, the first image including a plurality of first patterns respectively corresponding to the apertures provided in the multi-beam generating mechanism; calculating a first deviation amount between a position of the first pattern in the first image and a target position thereof; a step of irradiating light onto a plurality of photoelectric conversion units, each corresponding to a plurality of apertures provided in the multi-beam generating mechanism, which are installed on a stage of the electron beam observation device, and acquiring a second image formed by the electron beam from the photoelectric conversion units, wherein the second image includes a plurality of second patterns, each corresponding to each photoelectric conversion unit; calculating a second deviation amount between the position of the second pattern in the second image and its target position; obtaining a deviation of a trajectory of the primary electron beam in the primary optical system based on the first deviation amount and the second deviation amount.

[0007] According to one aspect of the present invention, [2] A method for evaluating deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation apparatus including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: a step of irradiating an irradiation target with primary electron beams from a plurality of electron sources and acquiring a first image formed by secondary electron beams from the irradiation target, the first image including a plurality of first patterns respectively corresponding to the arrangement of the plurality of electron sources; calculating a first deviation amount between a position of the first pattern in the first image and a target position thereof; a step of irradiating light onto a plurality of photoelectric conversion units, which are installed on a stage of the electron beam observation device and correspond respectively to the arrangement of the plurality of electron sources, and acquiring a second image formed by the electron beam from the photoelectric conversion units, the second image including a plurality of second patterns, each corresponding to each photoelectric conversion unit; calculating a second deviation amount between the position of the second pattern in the second image and its target position; obtaining a deviation of a trajectory of the primary electron beam in the primary optical system based on the first deviation amount and the second deviation amount.

[0008] [3] In the evaluation method according to [1] or [2], a position of the first pattern in the first image is deviated from a target position in accordance with a deviation of a trajectory of the primary electron beam in the primary optical system and a deviation of a trajectory of the secondary electron beam in the secondary optical system; The position of the second pattern in the second image deviates from the target position depending on the deviation of the trajectory of the secondary electron beam in the secondary optical system, but it is desirable that it does not depend on the deviation of the trajectory of the primary electron beam in the primary optical system.

[0009] [4] In the evaluation method according to any one of [1] to [3], The irradiation target may be a stage of the electron beam observation apparatus.

[0010] [5] In the evaluation method according to any one of [1] to [3], the plurality of photoelectric conversion units are provided on a substrate, The irradiation target may be a portion of the substrate where the photoelectric conversion unit is not provided.

[0011] According to one aspect of the present invention, [6] An evaluation device used in an electron beam observation device including a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons, and a secondary optical system that detects with a detector a secondary electron beam composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the evaluation device being used to evaluate deviation of a trajectory of a primary electron beam in the primary optical system, There is provided an evaluation device including a plurality of photoelectric conversion units respectively corresponding to a plurality of apertures provided in a multi-beam generating mechanism that generates the primary electron beam.

[0012] According to one aspect of the present invention, [7] An evaluation device used in an electron beam observation device including a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons, and a secondary optical system that detects with a detector a secondary electron beam composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the evaluation device being used to evaluate deviation of a trajectory of a primary electron beam in the primary optical system, An evaluation device is provided that includes a plurality of photoelectric conversion units respectively corresponding to the arrangement of a plurality of electron sources that emit the primary electron beams.

[0013] [8] In the evaluation device according to [6] or [7], a substrate; It is desirable that the photoelectric conversion portion be disposed in a hole provided in the substrate.

[0014] [9] [6] to [8], wherein the evaluation device It is desirable that the surface of the substrate and the surface of the photoelectric conversion portion are flush with each other.

[0015] According to one aspect of the present invention,

[10] A method for manufacturing an evaluation device used to evaluate deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation device including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: forming a photoelectric conversion material film on a light-transmitting substrate; a step of patterning the formed photoelectric conversion material film to form a plurality of photoelectric conversion units respectively corresponding to a plurality of openings provided in a multi-beam generating mechanism that generates the primary electron beam; and placing the base material on which the photoelectric conversion section is formed in a hole section formed in a substrate.

[0016] According to one aspect of the present invention,

[11] A method for manufacturing an evaluation device used to evaluate deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation device including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: forming a photoelectric conversion material film on a light-transmitting substrate; a step of patterning the formed photoelectric conversion material film to form a plurality of photoelectric conversion units respectively corresponding to a plurality of electron sources that emit the primary electron beams; and placing the base material on which the photoelectric conversion section is formed in a hole section formed in a substrate. [Effects of the Invention]

[0017] It is possible to evaluate the deviation of the electron beam trajectory in the primary optical system of the electron beam observation device. [Brief explanation of the drawings]

[0018] [Figure 1A] 1 is a schematic configuration diagram of an electron beam observation apparatus according to a first embodiment. [Figure 1B] FIG. 2 is a schematic diagram of a detector 28. [Figure 1C] FIG. 1B is a schematic configuration diagram of an electron beam observation apparatus which is a modified example of FIG. 1A. [Figure 2] 2 is a schematic diagram of a multi-beam generating mechanism 12 in the electron beam observation apparatus of FIG. 1. [Figure 3A] FIG. 2 is a plan view of a sample plate 3 used in the evaluation according to the present embodiment. [Figure 3B] Cross section AA of Figure 3A. [Figure 4] 1 is a flowchart showing the procedure of an evaluation method according to the present embodiment. [Figure 5A] FIG. 4 is a diagram schematically showing an image obtained in step S1. [Figure 5B] FIG. 10 is a diagram showing the image obtained in step S1 superimposed on the target positions 61 to 64 (indicated by dashed lines) of the patterns 51 to 54. [Figure 6A] FIG. 10 is a diagram schematically showing an image obtained in step S3. [Figure 6B] FIG. 10 is a diagram showing the image obtained in step S3 and the target positions 81 to 84 of the patterns 71 to 74 superimposed on each other. [Figure 7] FIG. 10 is a schematic configuration diagram of an electron beam observation apparatus according to a second embodiment. [Figure 8] FIG. 2 is a diagram showing a schematic arrangement of electron sources 111 to 113. [Figure 9] FIG. 2 is a plan view of a sample plate 3 used in the evaluation according to the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0020] (First embodiment) 1A is a schematic diagram of an electron beam observation apparatus according to a first embodiment. This electron beam observation apparatus is, for example, a scanning electron microscope (SEM), and includes a primary optical system 1 (also called an irradiation system or a multi-beam optical system) and a secondary optical system 2 (also called an imaging system or a projection optical system).

[0021] The primary optical system 1 focuses and irradiates a primary electron beam consisting of multiple primary electrons onto multiple locations on a sample placed on a stage 16, and is composed of an electron source 11, a multi-beam generating mechanism 12, a transfer lens 13, a beam separator 14, an objective lens 15, a stage 16, a scan deflector 17, etc.

[0022] The electron beam emitted from the electron source 11 is appropriately accelerated by an accelerator (not shown) and expanded by a lens (not shown), and then enters the multi-beam generating mechanism 12. The multi-beam generating mechanism 12 has multiple apertures (described below), and when the electron beam from the electron source 11 passes through these apertures, a primary electron beam consisting of multiple primary electrons is generated. The generated primary electron beams are individually focused by a transfer lens 13, a beam separator 14, and an objective lens 15, and are irradiated at multiple discrete points at equal intervals on a sample placed on a stage 16.

[0023] The primary electron beam is deflected by the scan deflector 17 so as to scan the sample two-dimensionally, thereby allowing the primary electron beam, which is emitted discretely, to be emitted evenly onto the sample.

[0024] The secondary optical system 2 detects, with a detector 28, a secondary electron beam made up of multiple secondary electrons emitted from a sample irradiated with the primary electron beam, and is composed of an objective lens 15, a beam separator 14, a beam bender 21, a projection lens 27, an aperture stop 26, and a detector 28. The objective lens 15 and the beam separator 14 are shared with the primary optical system 1.

[0025] The secondary electron beam from the sample is focused by an objective lens 15. Then, the secondary electron beam is bent in a direction different from that of the primary optical system 1 by a beam separator 14 that forms a superimposed field of an electric field and a magnetic field. The secondary electron beam is further bent by a beam bender 21.

[0026] The secondary electron beam is brought close to the optical axis by the projection lens 27. The aperture stop 26 is placed at a position at the center of the optical axis where the secondary electrons are closest to each other.

[0027] The aperture stop 26 has an opening, and only the secondary electron beam that passes through the opening reaches the projection lens 27. This defines the aperture angle of the secondary electron beam.

[0028] As shown in FIG. 1B, the detector 28 includes, for example, a scintillator 281, a light amplifier 282, an image sensor 283 (for example, a CMOS image sensor), a magnifying lens 284, and a half mirror 285.

[0029] Secondary electrons emitted from multiple locations on the sample form an image on a scintillator 281, and light corresponding to the number of secondary electron beams reaching the scintillator 281 is generated from the scintillator 281. Since the generated light is divergent, it is enlarged and projected using a magnifying lens 284 arranged in the light path. Part of the light that passes through the magnifying lens 284 passes through a half mirror 285 and travels through a bundle of optical fibers to an optical amplifier 282, and part of the light is reflected by the half mirror 285 and travels to an image sensor 283. The former light is converted into an electrical signal by the amplifier 282, and a scanned image (SEM image) is formed with the number of beams corresponding to the number of secondary electron beams. The latter light forms an image on the image sensor 283, and an image of the secondary electron beam is obtained.

[0030] Fig. 1C is a schematic diagram of an electron beam observation apparatus that is a modification of Fig. 1A. As shown in the figure, a first relay lens 22, a second relay lens 23, and a field lens 25 may be added to the electron beam observation apparatus of Fig. 1A. In this case, a projection lens 27 is disposed between an aperture stop 26 and a detector 28.

[0031] 1C, the first relay lens 22 and the second relay lens 23 are adjusted so that the secondary electron beam forms an image of a constant size at a constant position near the main surface of the field lens 25, regardless of the potential of the sample. By providing these first relay lens 22 and second relay lens 23, a wide range of sample potentials can be accommodated.

[0032] The field lens 25 generates an electric field or a magnetic field to adjust the trajectory of the secondary electron beam so that the multiple secondary electrons constituting the secondary electron beam are closest to each other at the center of the optical axis near the position of the aperture stop 26. In other words, the aperture stop 26 is placed at a position where the multiple secondary electrons are closest to each other at the center of the optical axis.

[0033] The projection lens 27 forms an image of the secondary electron beam that has passed through the opening of the aperture stop 26 onto a detector 28 .

[0034] Fig. 2 is a schematic diagram of the multi-beam generating mechanism 12 in the electron beam observation apparatus of Fig. 1. As shown in the figure, the multi-beam generating mechanism 12 has a plurality of (four in Fig. 2) apertures 121 to 124. By irradiating the entire surface of the multi-beam generating mechanism 12 with an electron beam from the electron source 11, a primary electron beam composed of a plurality of primary electrons that have passed through the plurality of apertures 121 to 124 is obtained.

[0035] In Figure 2 and the following description, for simplicity, a multi-beam generating mechanism 12 having four apertures 121 to 124 will be used as an example, but there is no particular limit to the number of apertures, and it may be several to 1,000 or more.

[0036] In an electron beam observation apparatus that irradiates a sample with a primary electron beam consisting of multiple electrons, it is important to irradiate the electrons at an accurate position on the sample. The optical fibers in the detector 28 are provided corresponding to the apertures 121 to 124 of the multi-beam generating mechanism 12, but if the electrons are not irradiated at the accurate position, the optical fibers may not be able to receive the electrons (leading to reduced sensitivity) or the electrons may be received by incompatible optical fibers (causing image crosstalk).

[0037] However, in the primary optical system 1, the trajectory of the primary electron beam may deviate (be distorted) from the expected path when it passes through the transfer lens 13, beam separator 14, and objective lens 15. For example, if the transfer lens 13 is positioned differently from its original position, the primary electron beam will pass through a position different from the center of the transfer lens 13, resulting in a deviation in the irradiation position. This deviation can cause overlaps or gaps in the inspection area, so adjustments must be made to achieve the required inspection accuracy.

[0038] For this reason, the primary optical system 1 is provided with an aligner (not shown) for canceling deviations in the trajectory of the primary electron beam at the transfer lens 13, the beam separator 14, and the objective lens 15. Then, in order to determine how the trajectory of the primary electron beam should be adjusted by the aligner, it is necessary to evaluate deviations in the trajectory of the primary electron beam in the primary optical system 1.

[0039] However, even in the secondary optical system 2, the trajectory of the secondary electron beam may deviate (be distorted) from the expected trajectory when the secondary electron beam passes through the objective lens 15, the beam separator 14, the beam bender 21, the first relay lens 22, the second relay lens 23, the field lens 25, and the projection lens 27. Therefore, the image obtained by the image sensor 283 is a superposition of the deviation in the primary optical system 1 and the deviation in the secondary optical system 2.

[0040] Therefore, in this embodiment, only the deviation in the primary optical system 1 is evaluated as described below.

[0041] Fig. 3A is a plan view of a sample plate 3 (evaluation device) used in the evaluation according to this embodiment. Fig. 3B is a cross-sectional view taken along line AA in Fig. 3A. This sample plate 3 is placed on the stage 16 of the electron beam observation device of Fig. 1.

[0042] The sample plate 3 has a substrate 31 made of, for example, aluminum, and a photocathode 32. As shown in Fig. 3B, a hole 31a is formed in the substrate 31, and the photocathode 32 is embedded in this hole 31a. More specifically, the substrate 31 has a shoulder 31b facing the hole 31a, and the photocathode 32 is disposed on this shoulder 31b.

[0043] The photocathode 32 has a light-transmitting base material 41 and a plurality of photoelectric conversion units 421-424. The light-transmitting base material 41 is made of, for example, glass, quartz, or sapphire (sapphire, which has high thermal conductivity, is particularly preferable), and has a thickness of approximately 3 mm to 5 mm. The photoelectric conversion units 421-424 are formed of, for example, a metal film of gold, platinum, ruthenium, or the like, and have a thickness of approximately 5 nm to 100 nm. To increase the electron generation efficiency, the photoelectric conversion units 421-424 may have, in addition to the metal film, a CsBr film or the like having a thickness of approximately 5 nm to 20 nm provided on the upper surface thereof.

[0044] The photoelectric conversion units 421-424 correspond to the openings 121-124 of the multi-beam generating mechanism 12. More specifically, the positions, shapes, and sizes of the photoelectric conversion units 421-424 correspond to the openings 121-124 of the multi-beam generating mechanism 12 shown in FIG. 2, respectively. It is desirable that the upper surface of the substrate 31 and the upper surface of the light-transmitting base material 41 of the photocathode 32 are flush with each other. If the upper surfaces of the substrate 31 and the light-transmitting base material 41 are misaligned, the electric field may become non-uniform, which may cause discharge between the objective lens 15 and the stage 16 or disturb the electron trajectory, resulting in beam position deviation or aberration. The upper surface of the substrate 31 and the upper surfaces of the photoelectric conversion units 421-424 may be misaligned.

[0045] When light is irradiated from the bottom surface of the photocathode 32, electrons are generated from the photoelectric conversion sections 421 to 424 due to the photoelectric effect. On the other hand, electrons are not generated from areas other than the photoelectric conversion sections 421 to 424. The irradiated light must have a higher excitation power than the work function of the material that makes up the photoelectric conversion sections 421 to 424, and may be light having a wavelength shorter than 265 nm, laser light, an ultraviolet lamp, or a mercury lamp.

[0046] Such a photocathode 32 is manufactured by forming (e.g., vapor-depositing) a photoelectric conversion material on glass, which serves as the light-transmitting substrate 41, and then patterning the photoelectric conversion material using lithography technology to correspond to each of the openings 121 to 124 in the multi-beam generating mechanism 12.

[0047] In addition, one or more chips 33 used for other evaluations may be embedded in holes formed in the substrate 31 of the sample plate 3. In any case, it is sufficient that the sample plate 3 at least includes a plurality of photoelectric conversion units 421 to 424 corresponding to the plurality of openings 121 to 124 provided in the multi-beam generating mechanism 12, respectively.

[0048] 4 is a flowchart showing the procedure of the evaluation method according to this embodiment. Note that the procedure in the figure is an example, and the order may be changed as appropriate.

[0049] First, a primary electron beam is irradiated onto an irradiation target, and an image formed on the image sensor 283 by a secondary electron beam from the irradiation target is acquired (step S1). The irradiation target may be the surface of the stage 16 of the electron beam observation apparatus.

[0050] 5A is a diagram showing a schematic view of the image obtained in step S1. This image includes a plurality of patterns 51 to 54 corresponding to the apertures 121 to 124 in the multi-beam generating mechanism 12, respectively.

[0051] 5B is a diagram showing the image obtained in step S1 superimposed on target positions 61 to 64 (indicated by dashed lines) of the patterns 51 to 54. The target positions 61 to 64 are positions where the patterns 51 to 54 corresponding to the apertures 121 to 124 in the multi-beam generating mechanism 12, respectively, would be formed if there were no deviation of the electron beam in the primary optical system 1 and the secondary optical system 2.

[0052] As shown in the figure, patterns 51 to 54 in the image obtained in step S1 are shifted from target positions 61 to 64. This shift is caused by a shift in the trajectory of the primary electron beam in the primary optical system 1 and a shift in the trajectory of the secondary electron beam in the secondary optical system 2.

[0053] 4, the amount of deviation between the position of each pattern 51-54 in the image acquired in step S1 and its target position 61-64 is calculated (step S2). This amount of deviation includes deviation caused by deviation in the primary optical system 1 and deviation caused by deviation in the secondary optical system 2.

[0054] 5B, the deviation dx1 in the x direction and the deviation dy1 in the y direction between pattern 53 and its target position 63 are calculated. This calculation may be performed manually by an operator or by appropriate image processing. Furthermore, although it is desirable to calculate the deviations from the target positions 61-64 for all of patterns 51-54, it is also possible to calculate the deviations from the target positions 61-64 for only some of patterns 51-54.

[0055] Next, the sample plate 3 is placed on the stage 16 of the electron beam observation device. Then, light is irradiated from below the sample plate 3, causing the photoelectric conversion units 421 to 424 to generate an electron beam. This electron beam simulates a secondary electron beam emitted from the sample. Then, an image formed on the image sensor 283 by the electron beam from the photoelectric conversion units 421 to 424 is acquired (step S3).

[0056] 6A is a diagram schematically showing the image obtained in step S3. This image includes a plurality of patterns 71 to 74 corresponding to the photoelectric conversion sections 421 to 424 on the sample plate 3, respectively.

[0057] 6B is a diagram showing the image obtained in step S3 superimposed on the target positions 81 to 84 of the patterns 71 to 74. These target positions 81 to 84 are positions where the patterns 71 to 74 corresponding to the photoelectric conversion units 421 to 424 on the sample plate 3 would be formed if there was no deviation of the electron beam in the primary optical system 1 and the secondary optical system 2, and correspond to the target positions 61 to 64 in FIG.

[0058] 4, the amount of deviation between the position of each pattern 71-74 in the image acquired in step S3 and its target position 81-84 is calculated (step S4). This amount of deviation does not depend on the deviation of the trajectory of the primary electron beam in the primary optical system 1, but is caused by the deviation of the trajectory of the secondary electron beam in the secondary optical system 2.

[0059] 6B, the deviation dx2 in the x direction and the deviation dy2 in the y direction between pattern 73 and its target position 83 are calculated. This calculation may be performed manually by an operator or by appropriate image processing. Furthermore, although it is desirable to calculate the deviations from the target positions 81-84 for all of patterns 71-74, it is also possible to calculate the deviations from the target positions 81-84 for only some of patterns 71-74.

[0060] Then, the deviation of the trajectory of the primary electron beam in the primary optical system 1 is obtained from the deviation amount calculated in step S2 and the deviation amount calculated in step S4 (step S5). As a specific example, the difference between both deviation amounts (dx1-dx2 and dy1-dy2) becomes the deviation of the trajectory of the primary electron beam in the primary optical system 1.

[0061] In step S1, the sample plate 3 may be placed on the stage 16 in advance, and the portions of the sample plate 3 on which the photoelectric conversion units 421 to 424 are not formed may be targeted for irradiation.

[0062] As described above, according to this embodiment, an image formed by an electron beam that has passed through the primary optical system 1 and the secondary optical system 2 is compared with an image formed by an electron beam that has passed only through the secondary optical system 2, so that deviation of the electron beam trajectory in the primary optical system 1 can be evaluated. Then, deviation of the electron beam trajectory in the primary optical system 1 can be canceled by the aligner in the primary optical system 1. This makes it possible to realize a primary optical system 1 that can irradiate a primary electron beam with high precision, which can lead to, for example, the independent manufacture and sale of the primary optical system 1 alone.

[0063] (Second embodiment) In the first embodiment described above, a primary electron beam composed of a plurality of primary electrons is generated using a multi-beam generating mechanism 12 having a plurality of apertures. In contrast, in the second embodiment described below, a primary electron beam is generated by a plurality of electron sources 11 instead of the multi-beam generating mechanism 12. Below, explanations of the points in common with the first embodiment will be omitted or simplified, and differences will be mainly described.

[0064] 7 is a schematic diagram of an electron beam observation apparatus according to a second embodiment. This electron beam observation apparatus does not have the multi-beam generating mechanism 12 of FIG. 1A, but instead has multiple electron sources 111-113. Each of the electron sources 111-113 emits one electron beam. This generates a primary electron beam composed of multiple primary electrons.

[0065] 7, three electron sources 111 to 113 are schematically depicted, but there is no particular limit to the number, and the number may be from several to 1000 or more. Furthermore, multiple electron sources 111 to 113 may be provided instead of the multi-beam generating mechanism 12 of the electron beam observation apparatus shown in FIG. 1C.

[0066] FIG. 8 is a schematic diagram of the electron sources 111 to 113 as viewed from below. As shown in the figure, the three electron sources 111 to 113 are arranged in a row. In this embodiment, the sample plate 3 (FIG. 3A) described in the first embodiment can be used. However, as shown in FIG. 9, the photoelectric conversion units 521 to 523 of the sample plate 3 correspond to the arrangement of the electron sources 111 to 113, respectively. For example, if the three electron sources 111 to 113 are arranged in a row as shown in FIG. 8, the photoelectric conversion units 521 to 523 of the sample plate 3 are also arranged in a row as shown in FIG. 9.

[0067] The procedure of the evaluation method in this embodiment may be the same as that shown in FIG. 4, and will be briefly explained below.

[0068] First, a primary electron beam is irradiated onto an irradiation target, and an image formed on the image sensor 283 by a secondary electron beam from the irradiation target is acquired (step S1). The irradiation target may be the surface of the stage 16 of the electron beam observation apparatus. The image acquired here includes a plurality of patterns corresponding to the arrangement of the electron sources 111 to 113, respectively.

[0069] Next, the amount of deviation between the position of each pattern in the image acquired in step S1 and its target position is calculated (step S2). This amount of deviation includes deviation caused by deviation in the primary optical system 1 and deviation caused by deviation in the secondary optical system 2.

[0070] Next, the sample plate 3 is placed on the stage 16 of the electron beam observation device. Then, light is irradiated from below the sample plate 3, causing the photoelectric conversion units 521 to 523 to generate an electron beam. This electron beam simulates a secondary electron beam emitted from the sample. Then, an image formed on the image sensor 283 by the electron beam from the photoelectric conversion units 521 to 523 is acquired (step S3).

[0071] The image acquired here includes a plurality of patterns corresponding to the photoelectric conversion sections 521 to 523 on the sample plate 3, respectively.

[0072] Then, the amount of deviation between the position of each pattern in the image acquired in step S3 and its target position is calculated (step S4). This amount of deviation does not depend on the deviation of the trajectory of the primary electron beam in the primary optical system 1, but is caused by the deviation of the trajectory of the secondary electron beam in the secondary optical system 2.

[0073] Then, the deviation of the trajectory of the primary electron beam in the primary optical system 1 is obtained from the deviation amount calculated in step S2 and the deviation amount calculated in step S4 (step S5). As a specific example, the difference between the two deviation amounts becomes the deviation of the trajectory of the primary electron beam in the primary optical system 1.

[0074] In step S1, the sample plate 3 may be placed on the stage 16 in advance, and the portions of the sample plate 3 on which the photoelectric conversion sections 521 to 523 are not formed may be targeted for irradiation.

[0075] According to the second embodiment, even in an electron source observation device that generates a primary electron beam using multiple electron sources 111 to 113, a primary optical system 1 that can irradiate a primary electron beam with high precision can be realized, which can lead to, for example, the independent manufacture and sale of the primary optical system 1 alone.

[0076] Based on the above description, a person skilled in the art may be able to conceive additional effects and various modifications of the present invention, but the aspects of the present invention are not limited to the individual embodiments described above. Various additions, modifications, and partial deletions are possible within the scope of the conceptual idea and spirit of the present invention, which is derived from the content defined in the claims and their equivalents.

[0077] For example, what is described in this specification as a single device (or component, the same applies hereinafter) (including what is depicted as a single device in the drawings) may be realized by multiple devices. Conversely, what is described in this specification as multiple devices (including what is depicted as multiple devices in the drawings) may be realized by a single device. Alternatively, some or all of the means or functions included in one device may be included in another device.

[0078] Furthermore, not all of the features described in this specification are essential requirements. In particular, features described in this specification but not included in the claims can be considered optional additional features.

[0079] It should be noted that the applicant is merely aware of the inventions disclosed in the documents listed in the "Prior Art Documents" section of this specification, and the present invention does not necessarily aim to solve the problems of the disclosed inventions. The problem that the present invention aims to solve should be determined by taking into consideration the entire specification. For example, if this specification states that a specific configuration achieves a certain effect, it can also be said that the present invention solves a problem that is the reverse of that effect. However, it is not necessarily intended that such a specific configuration be an essential requirement. [Explanation of symbols]

[0080] 1 Multi-beam optical system 11,111~113 Electron source 12 Multi-beam generation mechanism 121~124 aperture 13 Transfer lens 14 Beam separator 15 Objective Lens 16 stages 17 Scan deflector 2 Projection optical system 21 Beam Bender 22 First relay lens 23 Second relay lens 25 Field Lens 26 Aperture diaphragm 27 Projection Lens 28 detectors 281 Scintillator 282 Optical Amplifier 283 Image Sensor 284 Half Mirror 284 Magnifying Lens 285 Half Mirror 3 Sample Plate 31 PCB 31a Hole 31b Shoulder 32 Photocathode 41 Light-transparent base material 421~424, 521~523 Photoelectric conversion unit 51~54,71~74 patterns 61~64,81~84 Target position

Claims

1. A method for evaluating deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation apparatus including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: a step of irradiating an irradiation target with a primary electron beam generated by a multi-beam generating mechanism having a plurality of apertures, and acquiring a first image formed by secondary electron beams from the irradiation target, the first image including a plurality of first patterns respectively corresponding to the apertures provided in the multi-beam generating mechanism; a step of calculating a first deviation amount between a position of the first pattern in the first image and a first target position thereof, the first target position being a position where the first pattern would be formed if no deviation of the electron beam occurs in the primary optical system and the secondary optical system; a step of irradiating light onto a plurality of photoelectric conversion units, each corresponding to a plurality of apertures provided in the multi-beam generating mechanism, which are installed on a stage of the electron beam observation device, and acquiring a second image formed by the electron beam from the photoelectric conversion units, the second image including a plurality of second patterns respectively corresponding to each photoelectric conversion unit; calculating a second deviation amount between a position of the second pattern in the second image and a second target position thereof, the second target position being a position where the second pattern would be formed if no deviation of the electron beam occurs in the primary optical system and the secondary optical system; obtaining a deviation of a trajectory of the primary electron beam in the primary optical system based on the first deviation amount and the second deviation amount.

2. A method for evaluating deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation apparatus including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: a step of irradiating an irradiation target with primary electron beams from a plurality of electron sources and acquiring a first image formed by secondary electron beams from the irradiation target, the first image including a plurality of first patterns respectively corresponding to the arrangement of the plurality of electron sources; a step of calculating a first deviation amount between a position of the first pattern in the first image and a first target position thereof, the first target position being a position where the first pattern would be formed if no deviation of the electron beam occurs in the primary optical system and the secondary optical system; a step of irradiating light onto a plurality of photoelectric conversion units, which are installed on a stage of the electron beam observation device and correspond respectively to an arrangement of the plurality of electron sources, and acquiring a second image formed by the electron beam from the photoelectric conversion units, the second image including a plurality of second patterns, which respectively correspond to each photoelectric conversion unit; calculating a second deviation amount between a position of the second pattern in the second image and a second target position thereof, the second target position being a position where the second pattern would be formed if no deviation of the electron beam occurs in the primary optical system and the secondary optical system; obtaining a deviation of a trajectory of the primary electron beam in the primary optical system based on the first deviation amount and the second deviation amount.

3. a position of the first pattern in the first image is deviated from a first target position in accordance with a deviation of a trajectory of the primary electron beam in the primary optical system and a deviation of a trajectory of the secondary electron beam in the secondary optical system; 3. The evaluation method according to claim 1, wherein the position of the second pattern in the second image is shifted from the second target position depending on a deviation of the trajectory of the secondary electron beam in the secondary optical system, but is not dependent on a deviation of the trajectory of the primary electron beam in the primary optical system.

4. 3. The evaluation method according to claim 1, wherein the irradiation target is a stage of the electron beam observation device.

5. the plurality of photoelectric conversion units are provided on a substrate, The evaluation method according to claim 1 , wherein the irradiation target is a portion of the substrate where the photoelectric conversion unit is not provided.

6. An evaluation device used in an electron beam observation device including a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons, and a secondary optical system that detects with a detector a secondary electron beam composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the evaluation device being used to evaluate deviation of a trajectory of a primary electron beam in the primary optical system, an evaluation device comprising a plurality of photoelectric conversion units respectively corresponding to a plurality of apertures provided in a multi-beam generating mechanism that generates the primary electron beam;

7. An evaluation device used in an electron beam observation device including a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons, and a secondary optical system that detects with a detector a secondary electron beam composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the evaluation device being used to evaluate deviation of a trajectory of a primary electron beam in the primary optical system, an evaluation device including a plurality of photoelectric conversion units respectively corresponding to the arrangement of a plurality of electron sources that emit the primary electron beams;

8. a substrate; The evaluation device according to claim 6 , wherein the photoelectric conversion unit is disposed in a hole formed in the substrate.

9. The evaluation device according to claim 8 , wherein the surface of the substrate and the surface of the photoelectric conversion portion are flush with each other.

10. A method for manufacturing an evaluation device used to evaluate deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation device including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: forming a photoelectric conversion material film on a light-transmitting substrate; a step of patterning the formed photoelectric conversion material film to form a plurality of photoelectric conversion units respectively corresponding to a plurality of openings provided in a multi-beam generating mechanism that generates the primary electron beam; and placing the base material on which the photoelectric conversion section is formed in a hole section formed in a substrate.

11. A method for manufacturing an evaluation device used to evaluate deviation of a trajectory of a primary electron beam in a primary optical system in an electron beam observation device including: a primary optical system that irradiates a sample with a primary electron beam composed of a plurality of primary electrons; and a secondary optical system that detects, with a detector, a secondary electron beam that is composed of a plurality of secondary electrons emitted from the sample irradiated with the primary electron beam, the method comprising: forming a photoelectric conversion material film on a light-transmitting substrate; a step of patterning the formed photoelectric conversion material film to form a plurality of photoelectric conversion units respectively corresponding to a plurality of electron sources that emit the primary electron beams; and placing the base material on which the photoelectric conversion section is formed in a hole section formed in a substrate.

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