Method for joining electronic components and method for transporting large quantities of electronic components

Abstract

To provide a substrate suitable for mounting micro light-emitting diode displays, a bonding method for electronic components, and a transfer method for a large number of electronic components.SOLUTION: A bonding method includes: providing an object substrate 100 which includes a first top surface 100A including a bonding region 110 having at least one pad 120 and a first undersurface 100B facing the first top surface; providing an electronic component 200 which includes an electronic component main body 210 having a second top surface 210A and a second undersurface 210B formed on the second top surface and facing the second top surface, and having at least one electrode connected to the electronic component main body; aligning the electronic component with the bonding region of the object substrate; aligning at least one electrode with at least one pad in the bonding region and irradiate with a laser beam; and welding at least one electrode and at least one pad in the bonding region of the object substrate using a laser beam.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] The present invention discloses a method for joining electronic components and a method for transporting large quantities of electronic components. [Background technology]

[0002] Light-emitting diodes (LEDs) have advantages such as active light emission, high brightness, and energy saving, making them widely used in lighting, displays, projectors, and other technical fields. Micro LED displays are gradually becoming a new generation of display technology. A full-high-density (FHD) display has approximately 2 million pixels arranged in 1920 rows and 1080 columns, with each pixel further divided into three subpixels: red, green, and blue. Therefore, a single FHD LED display contains a total of approximately 6 million LED dies. The key technology for cutting and attaching these 6 million dies to the display panel substrate is how to accurately transfer and fix a large number of micro LEDs onto the display panel substrate.

[0003] A known method for joining electronic components is to use a reflow welding method, in which a tin paste is heated to reflow, and then the electronic component is welded to the substrate. However, reflow welding has drawbacks such as drift of the electronic component due to uneven heating during the reflow process, short circuit of the electronic component due to excessive tin paste, blank welding due to insufficient tin paste, or cold welding due to an insufficient reflow temperature.

[0004] In addition, the known methods for transferring electronic components in large quantities mainly include electrostatic transfer, magnetic transfer, micro-transfer, and fluid assembly, etc. However, these methods for transferring electronic components in large quantities need to be further improved in terms of transfer speed and yield.

[0005] Therefore, there is a strong demand in the industry for a new method for joining electronic components and a method for transporting large quantities of electronic components. Summary of the Invention

[0006] The present invention discloses a method for joining electronic components, comprising the following steps: providing a target substrate having opposing first upper and lower surfaces, the first upper surface including a joining area, the joining area including at least one pad; providing an electronic component including an electronic component body and at least one electrode, the electronic component body having opposing second upper and lower surfaces, the at least one electrode being formed on the second lower surface of the electronic component body and electrically connected to the electronic component body; aligning the electronic component with the joining area of ​​the target substrate, the at least one electrode being aligned with the at least one pad in the joining area; providing a laser beam, irradiating the laser beam toward the electronic component body from above the electronic component or irradiating the target substrate from below the target substrate, and welding the electronic component to the at least one pad in the joining area of ​​the target substrate with the laser beam using the at least one electrode.

[0007] In the above-described method for bonding electronic components, the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0008] In the method for joining electronic components as described above, the flexible printed circuit board includes a soft insulating substrate, a circuit formed on the surface of the soft insulating substrate, and an insulating layer covering the circuit, and the pad is formed on the surface of the insulating layer and electrically connected to the circuit.

[0009] In the above-described method for bonding electronic components, the electronic components are selected from the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

[0010] In the above-described method for bonding electronic components, the light emitted by the light-emitting diode is red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light.

[0011] In the above-described method for bonding electronic components, the wavelength of the laser diode is 390 nm to 1700 nm.

[0012] In the above-described method for bonding electronic components, the semiconductor device is selected from the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

[0013] In the above-described method for bonding electronic components, the material of the at least one electrode and / or the at least one pad is a metal, a metal alloy, or a metal oxide, respectively.

[0014] The method for joining electronic components as described above further includes forming solder on the at least one pad and / or the at least one electrode, bringing the at least one electrode of the electronic component into indirect contact with the at least one electrode of the target substrate by the solder, heating the solder directly or indirectly with the laser light to obtain heated solder, and joining the at least one electrode of the electronic component to the at least one pad in the joining region of the target substrate by the heated solder.

[0015] In the above-described method for bonding electronic components, the wavelength of the laser light is 190 nm to 11000 nm.

[0016] The method for joining electronic components as described above further includes providing a transparent or semi-transparent dielectric layer on the second upper surface of the electronic component body, and irradiating the electronic component body with the laser light from above the electronic component through the transparent or semi-transparent dielectric layer.

[0017] The method for bonding electronic components as described above further includes providing a transparent or semi-transparent dielectric layer on the first lower surface of the target substrate, and irradiating the laser light onto the target substrate from below through the transparent or semi-transparent dielectric layer.

[0018] The present invention further discloses a method for transferring a large amount of electronic components, the method comprising the steps of: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate, on which a plurality of electronic components are formed, each of the electronic components including an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode being formed on the second lower surface of the electronic component body and electrically connecting the electronic component body; a laser beam is provided to irradiate the temporary substrate and the electronic component body from above the temporary substrate, and the electronic component is welded to the at least one pad in the bonding area of ​​the target substrate by the laser beam, with the at least one electrode of the electronic component facing the first upper surface of the target substrate, and the at least one electrode of the electronic component is aligned with the at least one pad in the bonding area of ​​the target substrate.

[0019] In the method for transferring a large number of electronic components as described above, the target substrates are semiconductor substrates, ceramic substrates, metal substrates, glass substrates, printed circuit boards, or flexible printed circuit boards.

[0020] In the method for transferring a large amount of electronic components as described above, the flexible printed circuit board includes a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit, and the pads are formed on the surface of the insulating layer and electrically connected to the circuit.

[0021] In the method for transferring a large amount of electronic components as described above, the electronic components are selected from the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

[0022] In the method for transporting a large amount of electronic components as described above, the light emitted by the light-emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0023] In the method for transporting a large amount of electronic components as described above, the wavelength of the laser diode is 390 nm to 1700 nm.

[0024] In the method for transferring a large amount of electronic components as described above, the semiconductor devices are selected from the group consisting of processors, memory ICs, microdevice ICs, logic ICs and analog ICs.

[0025] In the method for transferring a large amount of electronic components as described above, the material of the at least one electrode of the electronic components and / or the at least one pad of the bonding area is a metal, a metal alloy or a metal oxide, respectively.

[0026] The method for transferring a large number of electronic components as described above further includes forming solder on the at least one pad in the joining region of the target substrate and / or on at least one electrode of the electronic component, bringing the at least one electrode of the electronic component and the at least one pad in the joining region of the target substrate into indirect contact with each other using the solder, heating the solder directly or indirectly with the laser light to obtain heated solder, and joining the at least one electrode of the electronic component to the at least one pad in the joining region of the target substrate using the heated solder.

[0027] In the method for transporting a large amount of electronic components as described above, the wavelength of the laser light is 190 nm to 11000 nm.

[0028] In the method for transferring a large amount of electronic components as described above, the temporary substrate is photodecomposed or thermally decomposed when the laser light is irradiated onto the temporary substrate from above, and then removed, or the at least one electrode of the electronic component is directly peeled off and removed after being bonded to the at least one pad in the bonding region of the target substrate, respectively.

[0029] The method for transferring a large number of electronic components as described above further includes the step of providing a transparent or semi-transparent dielectric layer on the temporary substrate, and irradiating the laser light through the transparent or semi-transparent dielectric layer onto the temporary substrate and the electronic component bodies from above the electronic components.

[0030] The present invention discloses yet another method for transferring a large number of electronic components, the method comprising the steps of: providing a target substrate, the target substrate having a first upper surface and a first lower surface opposite to each other, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, the temporary substrate having a plurality of electronic components formed thereon, the electronic components each including an electronic component body and at least one electrode, the electronic component body having a second upper surface and a second lower surface opposite to each other, the at least one electrode formed on the second lower surface of the electronic component body; and electrically connected to the electronic component body, the second lower surface of the electronic component body facing the first upper surface of the target substrate, the electronic components being aligned with the bonding regions of the target substrate, and the at least one electrode of the electronic components being aligned with at least one pad of the bonding region, respectively; providing laser light and irradiating the laser light from below the target substrate toward the target substrate, and welding the electronic component to the at least one pad of the bonding region of the target substrate by the laser light, respectively.

[0031] In the method for transferring a large number of electronic components as described above, the target substrates are semiconductor substrates, ceramic substrates, metal substrates, glass substrates, printed circuit boards, or flexible printed circuit boards.

[0032] In the method for transferring a large amount of electronic components as described above, the flexible printed circuit board includes a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit, and the pads are formed on the surface of the insulating layer and electrically connected to the circuit.

[0033] In the method for transferring a large amount of electronic components as described above, the electronic components are selected from the group consisting of light-emitting diodes, laser diodes, and semiconductor elements.

[0034] In the method for transporting a large amount of electronic components as described above, the light emitted by the light-emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

[0035] In the method for transporting a large amount of electronic components as described above, the wavelength of the laser diode is 390 nm to 1700 nm.

[0036] In the method for transferring a large amount of electronic components as described above, the semiconductor devices are selected from the group consisting of processors, memory ICs, microdevice ICs, logic ICs and analog ICs.

[0037] In the method for transferring a large amount of electronic components as described above, the material of the at least one electrode of the electronic components and / or the at least one pad of the bonding area is a metal, a metal alloy or a metal oxide, respectively.

[0038] The method for transferring a large number of electronic components as described above further includes forming solder on the at least one pad in the joining region of the target substrate and / or on the at least one electrode of the electronic component, bringing the at least one electrode of the electronic component and the at least one pad in the joining region of the target substrate into indirect contact with each other using the solder, heating the solder directly or indirectly with the laser light to obtain heated solder, and joining the at least one electrode of the electronic component to the at least one pad in the joining region of the target substrate using the heated solder.

[0039] In the method for transferring a large amount of electronic components as described above, after the electronic components are bonded to the at least one pad in the bonding area of ​​the target substrate by the at least one electrode, the temporary substrate is removed after photodecomposition or thermal decomposition by irradiating the temporary substrate with a second laser beam from above the temporary substrate, or the temporary substrate is removed by directly peeling it off.

[0040] In the method for transporting a large amount of electronic components as described above, the wavelength of the laser light is 190 nm to 11000 nm.

[0041] In the method for transporting a large amount of electronic components as described above, the wavelength of the second laser light is 190 nm to 11000 nm.

[0042] The method for transferring a large number of electronic components as described above further includes providing a transparent or semi-transparent dielectric layer on the first lower surface of the target substrate, and irradiating the first laser beam onto the target substrate from below through the transparent or semi-transparent dielectric layer. [Brief explanation of the drawings]

[0043] [Figure 1A] 1A to 1C are schematic cross-sectional views of a bonding process for an electronic component according to a first embodiment of the present invention. [Figure 1B] 1A to 1C are schematic cross-sectional views of a bonding process for an electronic component according to a first embodiment of the present invention.

[0044] [Figure 2A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a second embodiment of the present invention. [Figure 2B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a second embodiment of the present invention.

[0045] [Figure 3A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a third embodiment of the present invention. [Figure 3B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a third embodiment of the present invention.

[0046] [Figure 4A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to Example 4 of the present invention. [Figure 4B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to Example 4 of the present invention.

[0047] [Figure 5A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a fifth embodiment of the present invention. [Figure 5B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a fifth embodiment of the present invention.

[0048] [Figure 6A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a sixth embodiment of the present invention. [Figure 6B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to a sixth embodiment of the present invention.

[0049] [Figure 7A] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to Example 7 of the present invention. [Figure 7B] 10A to 10C are schematic cross-sectional views of a bonding process for an electronic component according to Example 7 of the present invention.

[0050] [Figure 8A] 10 is a cross-sectional schematic view of a bonding process for an electronic component according to Example 8 of the present invention. [Figure 8B] 10 is a cross-sectional schematic view of a bonding process for an electronic component according to Example 8 of the present invention.

[0051] [Figure 9A] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to Example 9 of the present invention. [Figure 9B] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to Example 9 of the present invention.

[0052] [Figure 10A] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to a tenth embodiment of the present invention. [Figure 10B] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to a tenth embodiment of the present invention.

[0053] [Figure 11A] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to Example 11 of the present invention. [Figure 11B] 13A to 13C are cross-sectional schematic views of a bonding process for an electronic component according to Example 11 of the present invention.

[0054] [Figure 12A] 12A to 12C are cross-sectional schematic views of a joining process for an electronic component according to Example 12 of the present invention. [Figure 12B] 12A to 12C are cross-sectional schematic views of a joining process for an electronic component according to Example 12 of the present invention.

[0055] [Figure 13A] 13A to 13C are cross-sectional schematic views of a joining process for an electronic component according to Example 13 of the present invention. [Figure 13B] 13A to 13C are cross-sectional schematic views of a joining process for an electronic component according to Example 13 of the present invention.

[0056] [Figure 14A]14 is a cross-sectional schematic view of a joining process for an electronic component according to Example 14 of the present invention. [Figure 14B] 14 is a cross-sectional schematic view of a joining process for an electronic component according to Example 14 of the present invention.

[0057] [Figure 15A] 15A to 15C are cross-sectional schematic views of a joining process for an electronic component according to a fifteenth embodiment of the present invention. [Figure 15B] 15A to 15C are cross-sectional schematic views of a joining process for an electronic component according to a fifteenth embodiment of the present invention.

[0058] [Figure 16A] 16A to 16C are cross-sectional schematic views of a joining process for an electronic component according to a sixteenth embodiment of the present invention. [Figure 16B] 16A to 16C are cross-sectional schematic views of a joining process for an electronic component according to a sixteenth embodiment of the present invention.

[0059] [Figure 17A] 17A to 17C are cross-sectional schematic views of a joining process for an electronic component according to a seventeenth embodiment of the present invention. [Figure 17B] 17A to 17C are cross-sectional schematic views of a joining process for an electronic component according to a seventeenth embodiment of the present invention.

[0060] [Figure 18A] 18 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 18 of the present invention. [Figure 18B] 18 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 18 of the present invention. [Figure 18C] 18 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 18 of the present invention.

[0061] [Figure 19A] 19 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 19 of the present invention. [Figure 19B] 19 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 19 of the present invention. [Figure 19C]19 is a cross-sectional schematic view of a process for transferring a large number of electronic components according to Example 19 of the present invention.

[0062] [Figure 20A] 20 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 20 of the present invention. [Figure 20B] 20 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 20 of the present invention. [Figure 20C] 20 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 20 of the present invention. [Figure 20D] 20 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 20 of the present invention.

[0063] [Figure 21A] 21 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 21 of the present invention. [Figure 21B] 21 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 21 of the present invention. [Figure 21C] 21 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 21 of the present invention. [Figure 21D] 21 is a cross-sectional schematic diagram of a mass transfer process of electronic components according to Example 21 of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0064] In order to provide a more detailed and complete description of the disclosure of the present invention, the following provides illustrative descriptions of embodiments and specific examples of the present invention. However, these are not the only ways to implement or operate the specific examples of the present invention. The examples disclosed below may be combined with or substituted for each other when beneficial, or may be added to one example with another example without the need for further description or explanation.

[0065] In the following description, numerous specific details are set forth in order to provide the reader with a thorough understanding of the following examples. However, embodiments of the present invention may be practiced without such specific details. In other instances, well-known structures and devices are shown in the drawings only diagrammatically to simplify the drawings.

[0066] Example

[0067] Example 1

[0068] First, refer to FIG. 1A. As shown in FIG. 1A, a target substrate 100 and an electronic component 200 are provided. The target substrate 100 has opposing first upper and lower surfaces 100A and 100B. The first upper surface 100A includes a bonding region 110, which includes at least one pad 120. The electronic component 200 includes an electronic component body 210 having opposing second upper and lower surfaces 210A and 210B, and at least one electrode 220. The at least one electrode 220 is formed on the second lower surface 210B of the electronic component body 210 and is electrically connected to the electronic component body 210. The electronic component 200 is aligned with the bonding region 110 of the target substrate 100. The at least one electrode 220 is aligned with at least one pad 120 in the bonding region 110.

[0069] According to this embodiment, the target substrate 100 may be, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0070] In this embodiment, the target substrate 100 is described as a flexible printed circuit board. The flexible printed circuit board may include a flexible insulating substrate, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit. The pads are formed on the surface of the insulating layer and are electrically connected to the circuit.

[0071] According to this embodiment, the electronic component 200 may be, for example, a light-emitting diode, a laser diode, or a semiconductor device, but is not limited thereto. The light emitted by the light-emitting diode may be, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode may be, for example, but is not limited to, 390 nm to 1700 nm. The semiconductor device may be, for example, but is not limited to, a processor, a memory IC, a microdevice IC, a logic IC, or an analog IC. The electronic component 200 of this embodiment 1 will be described using a light-emitting diode as an example.

[0072] According to this embodiment, the material of the at least one electrode 220 and / or the at least one pad 120, respectively, may be, for example, but is not limited to, a metal, a metal alloy, or a metal oxide.

[0073] Next, refer to FIG. 1B. As shown in FIG. 1B, a laser beam is provided. The wavelength of the laser beam may be, for example, 190 nm to 11,000 nm, but is not limited thereto. The laser beam is irradiated from above the electronic component 200 toward the electronic component body 210. The laser beam is focused on the second upper surface 210A of the electronic component body 210, inside the electronic component body 210, the second lower surface 210B of the electronic component body 210, at least one electrode 220, or at least one pad 120. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 in the bonding region 110 of the target substrate 100 by the at least one electrode 220 using the laser beam.

[0074] Example 2

[0075] First, refer to Fig. 2A. As shown in Fig. 2A, a target substrate 100 and an electronic component 200 having the same configuration as those described in Example 1 are provided, and will not be described further here.

[0076] Next, refer to FIG. 2B. As shown in FIG. 2B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated toward the target substrate 100 from below the target substrate 100, so that the laser light can be focused on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, or at least one electrode 220. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and the at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 in the bonding region 110 of the target substrate 100 by the at least one electrode 220 using the laser light.

[0077] Example 3

[0078] First, refer to Fig. 3A. As shown in Fig. 3A, a target substrate 100 and an electronic component 200 having a configuration similar to that described in Example 1 are provided, but will not be described further here. Also, as shown in Fig. 3A, solder 300 is formed on at least one pad 120 and / or at least one electrode 220, and this solder 300 indirectly contacts at least one electrode 220 of the electronic component 200 with at least one electrode 120 of the target substrate 100.

[0079] Next, refer to FIG. 3B. As shown in FIG. 3B, laser light is supplied. The wavelength of this laser light is, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated from above the electronic component 200 toward the electronic component body 210. This laser light is focused on the second upper surface 210A of the electronic component body 210, the interior of the electronic component body 210, the second lower surface 210B of the electronic component body 210, at least one electrode 220, the solder 300, or at least one pad 120. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0080] Example 4

[0081] First, refer to Fig. 4A. As shown in Fig. 4A, a target substrate 100 and an electronic component 200 having a configuration similar to that described in Example 1 are provided, but will not be described further here. Also, as shown in Fig. 4A, solder 300 is formed on at least one pad 120 and / or at least one electrode 220, and this solder 300 indirectly contacts at least one electrode 220 of the electronic component 200 with at least one electrode 120 of the target substrate 100.

[0082] Next, refer to FIG. 4B. As shown in FIG. 4B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated toward the target substrate 100 from below the target substrate 100. This laser light is focused on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, solder 300, or at least one electrode 220. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one solder pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0083] Example 5

[0084] 5A and 5B. The bonding process of the electronic component disclosed in Example 5 is generally similar to that disclosed in Example 1. The difference is that Example 5 further includes providing a transparent or semi-transparent dielectric layer 400 on the second upper surface 210A of the electronic component body 210. The laser light is irradiated onto the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent dielectric layer 400. The laser light is then focused onto the second upper surface 210A of the electronic component body 210, the interior of the electronic component body 210, the second lower surface 210B of the electronic component body 210, at least one electrode 220, or at least one pad 120. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded by at least one electrode 220 to at least one pad 120 in the bonding area 110 of the target substrate 100 with laser light.

[0085] Example 6

[0086] 6A and 6B. The bonding process of the electronic component disclosed in Example 6 is generally similar to that disclosed in Example 2. The difference is that Example 6 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. Laser light is irradiated onto the target substrate 100 from below the target substrate 100 through the transparent or semi-transparent dielectric layer 400. The laser light is focused onto the first upper surface 100A of the target substrate 100, the interior of the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, or at least one electrode 220. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and the at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded by at least one electrode 220 to at least one pad 120 in the bonding area 110 of the target substrate 100 with laser light.

[0087] Example 7

[0088] 7A and 7B. The bonding process of an electronic component disclosed in Example 7 is generally similar to that disclosed in Example 3. The difference is that Example 7 further includes providing a transparent or semi-transparent dielectric layer 400 on the second upper surface 210A of the electronic component body 210. Laser light is irradiated onto the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent dielectric layer 400. The laser light is focused on the second upper surface 210A of the electronic component body 210, the interior of the electronic component body 210, the second lower surface 210B of the electronic component body 210, the solder 300, at least one electrode 220, or at least one pad 120. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one solder pad 120 of the bonding area 110 of the target substrate 100 by heated solder 300'.

[0089] Example 8

[0090] 8A-8B. The electronic component bonding process disclosed in Example 8 is generally similar to that disclosed in Example 4. The difference is that Example 8 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. Laser light is irradiated onto the target substrate 100 from below through the transparent or semi-transparent dielectric layer 400. The laser light is focused onto the first upper surface 100A of the target substrate 100, the interior of the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120, the solder 300, or at least one electrode 220. The solder 300 is then heated directly or indirectly by the laser light to obtain a heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 of the bonding area 110 of the target substrate 100 by heated solder 300'.

[0091] Example 9

[0092] First, refer to Fig. 9A. As shown in Fig. 9A, a target substrate 100, an electronic component 200, and a solder 300 having the same configuration as those described in Example 3 are provided, but will not be described further here.

[0093] Next, refer to FIG. 9B. As shown in FIG. 9B, laser light is supplied. The wavelength of this laser light is, for example, but not limited to, 190 nm to 11,000 nm. This laser light is irradiated directly onto the solder 300 from the lateral direction, directly heating the solder 300 to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one solder pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0094] Example 10

[0095] First, refer to FIG. 10A . As shown in FIG. 10A , a target substrate 100 and an electronic component 200 are provided. The configuration of this target substrate 100 is similar to that described in Example 1, and will not be further described here. The configuration of this electronic component 200 is generally similar to that described in Example 1. However, the electronic component body 210 according to Example 10 further includes a through-hole (not shown) penetrating the second upper surface 210A and the second lower surface 210B. A thermally conductive material 250 is embedded in this through-hole (not shown). The thermally conductive material 250 is connected to at least one electrode 220 of the electronic component 200. Here, the electronic component 200 is similarly aligned with the bonding region 110 of the target substrate 100. Furthermore, the at least one electrode 220 is aligned with at least one pad 120 in the bonding region 110.

[0096] Next, refer to FIG. 10B. As shown in FIG. 10B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated from above the electronic component 200 toward the electronic component body 210. This laser light is focused on the upper surface (not shown) of the thermally conductive material 250, inside the thermally conductive material 250, the lower surface (not shown) of the thermally conductive material 250, at least one electrode 220, or at least one pad 120. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 in the bonding region 110 of the target substrate 100 by the at least one electrode 220 using the laser light.

[0097] Example 11

[0098] First, refer to FIG. 11A. As shown in FIG. 11A, a target substrate 100 and an electronic component 200 are provided. The configuration of this electronic component 200 is similar to that described in Example 1, and will not be further described here. The configuration of this target substrate 100 is generally similar to that described in Example 1. However, the target substrate 100 of Example 11 further has a through-hole (not shown) penetrating the first upper surface 100A and the first lower surface 100B. A thermally conductive material 150 is embedded in this through-hole (not shown). The thermally conductive material 150 is connected to at least one pad 120 in the bonding region 110 of the target substrate 100. Here, the electronic component 200 is similarly aligned with the bonding region 110 of the target substrate 100. At least one electrode 220 is aligned with at least one pad 120 in the bonding region 110.

[0099] Next, refer to FIG. 11B. As shown in FIG. 11B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated toward the target substrate 100 from below the target substrate 100. This laser light is focused on the upper surface (not shown) of the thermally conductive material 150, inside the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 in the bonding region 110 of the target substrate 100 by the at least one electrode 220 using the laser light.

[0100] Example 12

[0101] First, refer to Fig. 12A. As shown in Fig. 12A, a target substrate 100 and an electronic component 200 are provided. The configurations of the target substrate 100 and the electronic component 200 are similar to those described in Example 10, and will not be further described here. Also, as shown in Fig. 12A, solder 300 is formed on at least one pad 120 and / or at least one electrode 220. This solder 300 indirectly contacts at least one electrode 220 of the electronic component 200 with at least one electrode 120 of the target substrate 100.

[0102] Next, refer to FIG. 12B. As shown in FIG. 12B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated from above the electronic component 200 toward the electronic component body 210. This laser light is then focused on the upper surface (not shown) of the thermally conductive material 250, inside the thermally conductive material 250, the lower surface (not shown) of the thermally conductive material 250, at least one electrode 220, the solder 300, or at least one solder pad 120. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0103] Example 13

[0104] First, refer to Fig. 13A. As shown in Fig. 13A, a target substrate 100 and an electronic component 200 are provided. The configurations of the target substrate 100 and the electronic component 200 are similar to those described in Example 11, and will not be described further here. Also, as shown in Fig. 13A, solder 300 is formed on at least one pad 120 and / or at least one electrode 220. At least one electrode 220 of the electronic component 200 and at least one electrode 120 of the target substrate 100 are in indirect contact with each other via this solder 300.

[0105] Next, refer to FIG. 13B. As shown in FIG. 13B, laser light is supplied. The wavelength of this laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated toward the target substrate 100 from below the target substrate 100. The laser light is then focused on the upper surface (not shown) of the thermally conductive material 150, inside the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0106] Example 14

[0107] 14A and 14B. The bonding process of the electronic component disclosed in Example 14 is generally similar to that disclosed in Example 10. The difference is that Example 14 further includes providing a transparent or semi-transparent dielectric layer 400 on the second upper surface 210A of the electronic component body 210. The laser light is irradiated onto the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent dielectric layer 400. The laser light is then focused onto the upper surface (not shown) of the thermally conductive material 150, inside the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220. A eutectic layer (not shown) is then generated between the at least one electrode 220 of the electronic component 200 and the at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded by at least one electrode 220 to at least one pad 120 in the bonding area 110 of the target substrate 100 with laser light.

[0108] Example 15

[0109] 15A and 15B. The bonding process of the electronic component disclosed in Example 15 is generally similar to that disclosed in Example 11. The difference is that Example 15 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. Here, laser light is irradiated onto the target substrate 100 from below through the transparent or semi-transparent dielectric layer 400. The laser light can be focused on the upper surface (not shown) of the thermally conductive material 150, within the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220. A eutectic layer (not shown) is formed between the at least one electrode 220 of the electronic component 200 and the at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded by at least one electrode 220 to at least one pad 120 in the bonding area 110 of the target substrate 100 with laser light.

[0110] Example 16

[0111] 16A and 16B. The bonding process of an electronic component disclosed in Example 16 is generally similar to that disclosed in Example 12. The difference is that Example 16 further includes providing a transparent or semi-transparent dielectric layer 400 on the second upper surface 210A of the electronic component body 210. Laser light is irradiated onto the electronic component body 210 from above the electronic component 200 through the transparent or semi-transparent dielectric layer 400. The laser light can be focused on the upper surface (not shown) of the thermally conductive material 250, inside the thermally conductive material 250, the lower surface (not shown) of the thermally conductive material 250, at least one electrode 220, the solder 300, or at least one solder pad 120. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one solder pad 120 of the bonding area 110 of the target substrate 100 by heated solder 300'.

[0112] Example 17

[0113] 17A and 17B. The bonding process of an electronic component disclosed in Example 17 is generally similar to that disclosed in Example 13. The difference is that Example 17 further includes a step of providing a transparent or semi-transparent dielectric layer 400 on the first lower surface 100B of the target substrate 100. Laser light is irradiated onto the target substrate 100 from below through the transparent or semi-transparent dielectric layer 400. The laser light is then focused onto the upper surface (not shown) of the thermally conductive material 150, inside the thermally conductive material 150, the lower surface (not shown) of the thermally conductive material 150, at least one pad 120, or at least one electrode 220. The solder 300 is then directly or indirectly heated by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0114] Example 18

[0115] The method for transferring a large amount of electronic components disclosed in this eighteenth embodiment will be described below with reference to FIGS. 18A to 18C.

[0116] First, as shown in FIG. 18A , a target substrate 100 is provided. The target substrate 100 has opposing first upper and lower surfaces 100A and 100B. The first upper surface 100A includes complex bonding regions 110. Each bonding region 110 includes at least one pad 120. Also, as shown in FIG. 18A , a temporary substrate 500 is provided above the target substrate 100. A plurality of electronic components 200 are formed on the temporary substrate 500. Each electronic component 200 includes an electronic component body 210 and at least one electrode 220. The electronic component body 210 has opposing second upper and lower surfaces 210A and 210B. The at least one electrode 220 is formed on the second lower surface 210B of the electronic component body 210 and is electrically connected to the electronic component body 210. Here, the second lower surface 210B of the electronic component body 210 faces the first upper surface 100A of the target substrate 100. The electronic components 200 are aligned with the bonding regions 110 of the target substrate 100, respectively. At least one electrode 220 of the electronic component 200 is aligned with at least one pad 120 of the bonding region 110, respectively.

[0117] According to this embodiment, the target substrate 100 may be, for example, but not limited to, a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

[0118] In this embodiment, a flexible printed circuit board is used as an example of the target substrate 100. The flexible printed circuit board includes a flexible insulating substrate formed on the surface of an insulating layer and electrically connected to a circuit, a circuit formed on the surface of the flexible insulating substrate, and an insulating layer covering the circuit.

[0119] According to this embodiment, the electronic component 200 may be, for example, a light-emitting diode, a laser diode, or a semiconductor element, but is not limited thereto. The light emitted by the light-emitting diode may be, for example, red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light, but is not limited thereto. The wavelength of the laser diode may be, for example, but is not limited to, 390 nm to 1700 nm. The semiconductor component may be, for example, but is not limited to, a processor, a memory IC, a microdevice IC, a logic IC, or an analog IC. The electronic component 200 of this embodiment 1 will be described using a light-emitting diode as an example.

[0120] According to this embodiment, the material of at least one electrode 220 of the electronic component 200 and / or at least one pad 120 of the bonding region 110 may be, for example, but is not limited to, a metal, a metal alloy, or a metal oxide, respectively.

[0121] Next, as shown in FIG. 18B , laser light is applied. The wavelength of the laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. The laser light is irradiated onto the temporary substrate 500 and each electronic component body 210 from above the temporary substrate 500. The laser light is focused on the second upper surface 210A of the electronic component body 210, inside the electronic component body 210, the second lower surface 210B of the electronic component body 210, at least one electrode 220 of each electronic component 200, or at least one pad 120 of each bonding region 110. Furthermore, a eutectic layer (not shown) is generated between the at least one electrode 220 of each electronic component 200 and the at least one pad 120 of each bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 of the bonding region 110 of the target substrate 100 by the at least one electrode 220.

[0122] 18C , the electronic components 200 can be transferred en masse from the temporary substrate 500 to the bonding region 110 of the target substrate 100. Here, the temporary substrate 500 may be removed by photolysis or thermal decomposition when a laser beam is irradiated onto the temporary substrate 500 from above, or may be removed by direct peeling after at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100.

[0123] According to other embodiments of the present invention, the electronic component bonding methods disclosed in the fifth, tenth, and fourteenth embodiments may be applied to the method for transferring a large number of electronic components disclosed in the present embodiment, if necessary. The electronic component 200 is welded to at least one pad 120 in the bonding region 110 of the target substrate 100 by means of at least one electrode 220 using a laser beam.

[0124] Example 19

[0125] The method for transferring a large amount of electronic components disclosed in the present embodiment 19 will be described below with reference to FIGS. 19A to 19C.

[0126] First, as shown in Fig. 19A, a target substrate 100 and a temporary substrate 500 shown in Example 18 are provided. The configurations thereof are similar to those described in Example 18, and will not be further described here. Also, as shown in Fig. 19A, solder 300 is formed on the pads 120 and / or electrodes 220. At least one electrode 220 of the electronic component 200 and at least one electrode 120 in the bonding region 110 of the target substrate 100 are in indirect contact with each other via the solder 300.

[0127] Next, as shown in FIG. 19B, laser light is applied. The wavelength of the laser light may be, for example, 190 nm to 11,000 nm, but is not limited thereto. This laser light is irradiated onto the temporary substrate 500 and each electronic component body 210 from above the temporary substrate 500. This laser light is focused on the second upper surface 210A of the electronic component body 210, the interior of the electronic component body 210, the second lower surface 210B of the electronic component body 210, at least one electrode 220 of each electronic component 200, and at least one solder 300 or pad 120 of each bonding region 110. The solder 300 is then heated directly or indirectly by the laser light to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 of the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0128] 19C , the electronic component 200 is transferred en masse from the temporary substrate 500 to the bonding region 110 of the target substrate 100. Here, the temporary substrate 500 may be removed by photolysis or thermal decomposition when a laser beam is irradiated onto the temporary substrate 500 from above, or may be removed by direct peeling after at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100.

[0129] According to other embodiments of the present invention, the electronic component bonding methods disclosed in the seventh, twelfth, and sixteenth embodiments may be applied to the method for transferring a large number of electronic components disclosed in the present embodiment, if necessary. The electronic component 200 is welded to at least one pad 120 in the bonding region 110 of the target substrate 100 by means of at least one electrode 220 using a laser beam.

[0130] Example 20

[0131] The method for transferring a large amount of electronic components disclosed in this twentieth embodiment will be described below with reference to FIGS. 20A to 20C.

[0132] First, as shown in Figure 20A, a target substrate 100 and a temporary substrate 500 as shown in Example 18 are provided, the configuration of which is the same as that described in Example 18, and will not be further described here.

[0133] Next, as shown in FIG. 20B , a first laser beam is applied. The wavelength of the first laser beam may be, for example, 190 nm to 11,000 nm, but is not limited thereto. The first laser beam is irradiated onto the target substrate 100 from below the target substrate 100. The first laser beam is then focused on the first upper surface 100A of the target substrate 100, inside the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120 in each bonding region 110, or at least one electrode 220 of each electronic component 200. Furthermore, a eutectic layer (not shown) is generated between the at least one electrode 220 of the electronic component 200 and the at least one pad 120 in the bonding region 110 of the target substrate 100. Furthermore, the electronic component 200 is welded to the at least one pad 120 in the bonding region 110 of the target substrate 100 by the at least one electrode 220 using the first laser beam.

[0134] Next, as shown in FIG. 20C, a second laser beam is applied. The wavelength of the second laser beam may be, for example, but not limited to, 190 nm to 11,000 nm. The second laser beam is applied from above the temporary substrate 500. The temporary substrate 500 is photodecomposed or thermally decomposed and then removed. As shown in FIG. 20D, the electronic components 200 are transferred en masse from the temporary substrate 500 to the bonding region 110 of the target substrate 100.

[0135] In addition, in another embodiment of the present invention, the temporary substrate 500 may be directly peeled off and removed after at least one electrode 220 of the electronic component 200 is respectively bonded to at least one pad 120 of the bonding area 110 of the target substrate 100.

[0136] According to other embodiments of the present invention, the electronic component bonding methods disclosed in the sixth, eleventh, and fifteenth embodiments may be applied to the method for transferring a large number of electronic components disclosed in the present embodiment, if necessary. The electronic component 200 is welded to at least one pad 120 in the bonding region 110 of the target substrate 100 by means of at least one electrode 220 using a laser beam.

[0137] Example 21

[0138] First, as shown in Fig. 21A, a target substrate 100 and a temporary substrate 500 as shown in Example 18 are provided. The configurations thereof are similar to those described in Example 18, and will not be further described here. Also, as shown in Fig. 21A, solder 300 is formed on pads 120 and / or electrodes 220. This solder 300 indirectly contacts at least one electrode 220 of electronic component 200 with at least one electrode 120 in bonding region 110 of target substrate 100, respectively.

[0139] Next, as shown in FIG. 21B, a first laser beam is applied. The wavelength of the first laser beam may be, for example, 190 nm to 11,000 nm, but is not limited thereto. The first laser beam is irradiated onto the target substrate 100 from below the target substrate 100. The first laser beam is then focused on the first upper surface 100A of the target substrate 100, the interior of the target substrate 100, the first lower surface 100B of the target substrate 100, at least one pad 120 in each bonding region 110, the solder 300, or at least one electrode 220 of each electronic component 200. The solder 300 is then heated directly or indirectly by the laser beam to obtain heated solder 300'. Furthermore, at least one electrode 220 of the electronic component 200 is bonded to at least one pad 120 in the bonding region 110 of the target substrate 100 by the heated solder 300'.

[0140] Next, as shown in FIG. 21C, a second laser beam is applied. The wavelength of the second laser beam may be, for example, but is not limited to, 190 nm to 11,000 nm. The second laser beam is irradiated onto the temporary substrate 500 from above the temporary substrate 500. The temporary substrate 500 is then removed by photolysis or thermal decomposition. Then, as shown in FIG. 21D, the electronic components 200 are transferred en masse from the temporary substrate 500 to the bonding region 110 of the target substrate 100.

[0141] In addition, in another embodiment of the present invention, the temporary substrate 500 may be directly peeled off and removed after at least one electrode 220 of the electronic component 200 is respectively bonded to at least one pad 120 of the bonding area 110 of the target substrate 100.

[0142] According to another embodiment of the present invention, the electronic component bonding methods disclosed in the eighth, thirteenth, seventeenth, etc. may be applied to the method for transferring a large amount of electronic components disclosed in this embodiment. Then, the electronic component 200 is welded to at least one pad 120 in the bonding region 110 of the target substrate 100 by at least one electrode 220 using a laser beam.

[0143] Although the present invention has been disclosed as described above in the embodiments, it is not used to limit the present invention, and any person skilled in the art can make various modifications and improvements without departing from the spirit and scope of the present invention, so the protection scope of the present invention is subject to those defined by the scope of the attached patent application. [Explanation of symbols]

[0144] 100 Target board 100A First Top 100B First lower surface 110 Joint area 120 pads 200 Electronic Components 210 Electronic component body 210A Second Top 210B Second lower surface 220 electrode 150, 250 Thermal Conductive Material 300 Solder 300' heated solder 400 transparent or semi-transparent dielectric layer 500 temporary board

Claims

1. A method for joining electronic components, comprising: providing a target substrate, the target substrate having opposing first upper and first lower surfaces, the first upper surface including a bonding area, the bonding area including at least one pad; an electronic component including an electronic component body and at least one electrode, the electronic component body having opposing second upper and lower surfaces, the at least one electrode formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, the electronic component being aligned with the bonding region of the target substrate, and the at least one electrode being aligned with the at least one pad in the bonding region; providing a laser beam, and irradiating the laser beam from above the electronic component toward the electronic component body, or irradiating the laser beam from below the target substrate toward the target substrate, thereby generating a eutectic layer between the at least one electrode and the at least one pad, thereby welding the electronic component to the at least one pad via the at least one electrode; A method for joining electronic components comprising the steps of:

2. 2. The method for bonding electronic components according to claim 1, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

3. The flexible printed circuit board is a soft insulating substrate; a circuit formed on the surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, 3. The method for bonding electronic components according to claim 2, wherein the pad is formed on the surface of the insulating layer and is electrically connected to the circuit.

4. 2. The method for bonding electronic components according to claim 1, wherein the electronic component is selected from the group consisting of a light-emitting diode, a laser diode, and a semiconductor element.

5. 5. The method for bonding electronic components according to claim 4, wherein the light emitted by the light-emitting diode is red light, green light, blue light, yellow light, white light, infrared light, or ultraviolet light.

6. 5. The method for bonding electronic components according to claim 4, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

7. 5. The method for bonding electronic components according to claim 4, wherein the semiconductor device is selected from the group consisting of a processor, a memory IC, a microdevice IC, a logic IC, and an analog IC.

8. The method for bonding electronic components according to claim 1 , wherein the material of the at least one electrode and / or the at least one pad is a metal, a metal alloy, or a metal oxide, respectively.

9. 2. The method for bonding electronic components according to claim 1, wherein the wavelength of the laser light is 190 nm to 11,000 nm.

10. A method for transporting a large number of electronic components, comprising: providing a target substrate having opposing first upper and first lower surfaces, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate, on which a plurality of electronic components are formed, each of the electronic components including an electronic component body and at least one electrode, the electronic component body having opposing second upper and lower surfaces, the at least one electrode formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, the second lower surface of the electronic component body facing the first upper surface of the target substrate, the electronic components being respectively aligned with the bonding regions of the target substrate, and the at least one electrode of each of the electronic components being respectively aligned with the at least one pad of the bonding region; providing a laser beam, and irradiating the laser beam onto the temporary substrate and the electronic component body from above the temporary substrate to form a eutectic layer between the at least one electrode and the at least one pad, thereby welding the electronic component to the at least one pad via the at least one electrode; A method for transferring a large amount of electronic components, comprising steps.

11. 11. The method for transferring a large number of electronic components according to claim 10, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

12. The flexible printed circuit board is a soft insulating substrate; a circuit formed on the surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, 12. The method for transferring a large number of electronic components according to claim 11, wherein the pads are formed on the surface of the insulating layer and electrically connected to the circuit.

13. 11. The method for transferring a large amount of electronic components according to claim 10, wherein the electronic components are selected from the group consisting of light-emitting diodes, laser diodes, and semiconductor devices.

14. 14. The method for transporting a large amount of electronic components according to claim 13, wherein the light emitted by the light-emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

15. 14. The method for transferring a large amount of electronic components according to claim 13, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

16. 14. The method of claim 13, wherein the semiconductor devices are selected from the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

17. The method for transferring a large number of electronic components according to claim 10, wherein the material of the at least one electrode of the electronic component and / or the at least one pad of the bonding area is a metal, a metal alloy or a metal oxide, respectively.

18. 11. The method for transferring a large amount of electronic components according to claim 10, wherein the wavelength of the laser light is 190 nm to 11,000 nm.

19. 11. The method for transferring a large number of electronic components according to claim 10, wherein the temporary substrate is photodecomposed or thermally decomposed when the laser light is irradiated onto the temporary substrate from above, and then removed, and the at least one electrode of the electronic component is directly peeled off and removed by the laser light after being bonded to the at least one pad in the bonding region of the target substrate by the laser light.

20. A method for transporting a large number of electronic components, comprising: providing a target substrate having opposing first upper and first lower surfaces, the first upper surface including a plurality of bonding areas, each of the bonding areas including at least one pad; providing a temporary substrate above the target substrate, a plurality of electronic components formed on the temporary substrate, each of the electronic components including an electronic component body and at least one electrode, the electronic component body having opposing second upper and lower surfaces, the at least one electrode formed on the second lower surface of the electronic component body and electrically connected to the electronic component body, the second lower surface of the electronic component body facing the first upper surface of the target substrate, the electronic components respectively aligned with the bonding areas of the target substrate, and each of the at least one electrode of the electronic components respectively aligned with at least one pad of the bonding area; providing a first laser beam, and irradiating the first laser beam from below the target substrate toward the target substrate to generate a eutectic layer between the at least one electrode and the at least one pad, thereby welding the electronic component to the at least one pad via the at least one electrode; A method for transferring a large amount of electronic components, comprising steps.

21. 21. The method for transferring a large number of electronic components according to claim 20, wherein the target substrate is a semiconductor substrate, a ceramic substrate, a metal substrate, a glass substrate, a printed circuit board, or a flexible printed circuit board.

22. The flexible printed circuit board is a soft insulating substrate; a circuit formed on the surface of the flexible insulating substrate; an insulating layer covering the circuit; Including, 22. The method for transferring a large number of electronic components according to claim 21, wherein the pads are formed on the surface of the insulating layer and electrically connected to the circuit.

23. 21. The method for transferring a large number of electronic components according to claim 20, wherein the electronic components are selected from the group consisting of light emitting diodes, laser diodes, and semiconductor devices.

24. 24. The method for transporting a large amount of electronic components according to claim 23, wherein the light emitted by the light-emitting diodes is red light, and / or green light, and / or blue light, and / or yellow light, and / or white light, and / or infrared light, and / or ultraviolet light.

25. 24. The method for transferring a large amount of electronic components according to claim 23, wherein the wavelength of the laser diode is 390 nm to 1700 nm.

26. 24. The method of claim 23, wherein the semiconductor devices are selected from the group consisting of processors, memory ICs, microdevice ICs, logic ICs, and analog ICs.

27. 21. The method for transferring a large number of electronic components according to claim 20, wherein the material of the at least one electrode of the electronic component and / or the at least one pad of the bonding area is a metal, a metal alloy or a metal oxide, respectively.

28. 21. The method for transferring a large number of electronic components according to claim 20, wherein, after the electronic components are bonded to the at least one pad in the bonding region of the target substrate by the at least one electrode using the first laser light, the temporary substrate is removed after photodecomposition or thermal decomposition of the temporary substrate by irradiating the temporary substrate with a second laser light from above the temporary substrate, or the temporary substrate is directly peeled off and removed by irradiating the temporary substrate with the second laser light from above the temporary substrate.

29. 21. The method for transferring a large number of electronic components according to claim 20, wherein the wavelength of the first laser light is 190 nm to 11,000 nm.

30. 29. The method for transferring a large number of electronic components according to claim 28, wherein the wavelength of the second laser light is 190 nm to 11,000 nm.

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