Substrate Processing Equipment

Abstract

To provide a substrate processing apparatus capable of cleaning the back surface of a substrate with a strong pressure while suppressing damage to the substrate.SOLUTION: A substrate processing apparatus 100 includes a spin base SB, a plurality of chuck pins 37, a cleaning mechanism 10, and a lift pin 35. The cleaning mechanism 10 is arranged above the substrate W and physically cleans the back surface Wb of the substrate W. The plurality of chuck pins 37 have contact surfaces 372a and opposing surfaces 371a. The contact surface 372a contacts the substrate W when the substrate W is gripped. The opposing surface 371a extends in a direction intersecting the vertical direction from the lower end of the contact surface 372a. The opposing surface 371a faces the front surface Wa of the substrate W. The opposing surface 371a is adjacent to the upper surface Ra1 of the peripheral edge portion Ra of the spin base SB and is arranged at substantially the same height as the upper surface Ra1 of the peripheral edge portion Ra of the spin base SB. The spin base SB has a gas ejection port 33e for ejecting gas on its upper surface.SELECTED DRAWING: Figure 7

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, substrate processing apparatuses have been known that include a spin base that rotates a substrate and a brush that cleans the upper surface of the substrate (see, for example, Patent Document 1). Patent Document 1 describes a cleaning processing apparatus that includes a chuck plate that rotates the substrate, a detachment mechanism that is disposed on the periphery of the chuck plate and supports the edge of the lower surface of the substrate, and a brush that cleans the upper surface of the substrate. The chuck plate is provided with gas supply holes that supply gas between the lower surface of the substrate and the upper surface of the chuck plate. In this cleaning processing apparatus, gas is supplied between the substrate and the chuck plate to prevent rinsing liquid and the like from flowing around to the lower surface of the substrate during substrate cleaning. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-24963 Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, with the advancement of finer wiring patterns on substrates, measures to prevent defocusing have become increasingly important. Therefore, there is a growing demand for a flatter backside surface when electrostatically chucking the backside of a substrate. This requires the removal of particles and chucking marks, which were not a problem in the past, and therefore requires cleaning the backside of the substrate with stronger pressure using a brush or the like.

[0005] However, in the cleaning processing device of Patent Document 1, if the brush is pressed against the back surface of the substrate with greater pressure, the substrate may deform into a downward convex shape, causing the substrate to crack or the underside of the substrate, on which the device is formed, to come into contact with the spin base.

[0006] The present invention has been made in consideration of the above-mentioned problems, and its purpose is to provide a substrate processing apparatus that can clean the back surface of a substrate with strong pressure while suppressing damage to the substrate. [Means for solving the problem]

[0007] A substrate processing apparatus according to one aspect of the present invention includes a spin base, a plurality of chuck pins, a cleaning mechanism, and lift pins. The spin base is rotatable about a rotation axis extending vertically. The plurality of chuck pins are arranged on the periphery of the spin base. The cleaning mechanism is arranged above the substrate and physically cleans the upper surface of the substrate. The lift pins raise and lower the substrate between a first height position and a second height position lower than the first height position. The plurality of chuck pins are configured to horizontally grip the substrate at the second height position. The plurality of chuck pins have an abutment surface and an opposing surface. The abutment surface abuts against the substrate when gripping the substrate. The opposing surface extends from a lower end of the abutment surface in a direction intersecting the vertical direction. The opposing surface faces the lower surface of the substrate when the plurality of chuck pins grip the substrate. When the plurality of chuck pins grip the substrate, the facing surface is adjacent to an upper surface of the peripheral portion of the spin base and is disposed at approximately the same height as the upper surface of the peripheral portion of the spin base. The spin base has a gas outlet port on its upper surface for discharging gas.

[0008] In one aspect of the present invention, in the substrate processing apparatus, the cleaning mechanism may clean the upper surface of the substrate while the substrate is deformed into an upwardly convex shape by the gas discharged from the gas discharge port.

[0009] In one aspect of the present invention, in the substrate processing apparatus, the distance between the upper surface of the peripheral portion of the spin base and the lower surface of the substrate may be 2 mm or less.

[0010] In one aspect of the present invention, in the substrate processing apparatus, the distance between the upper surface of the peripheral portion of the spin base and the lower surface of the substrate may be 1 mm or less.

[0011] In one aspect of the present invention, in the substrate processing apparatus, the spin base may have the peripheral portion and a central portion disposed radially inward from the peripheral portion, and an upper surface of the central portion may be disposed at a position lower than an upper surface of the peripheral portion. Furthermore, an upper surface of the peripheral edge portion may be adjacent to the opposing surface on the radially inner side.

[0012] In one aspect of the present invention, in the substrate processing apparatus, an upper surface of the central portion may be a flat surface on which the gas discharge port is provided.

[0013] In one aspect of the present invention, in the substrate processing apparatus, the upper surface of the substrate may be cleaned by the cleaning mechanism while the gas is discharged from the gas discharge port at a rate of 100 liters per minute or more.

[0014] In one aspect of the present invention, in the substrate processing apparatus, the cleaning mechanism may include a brush that is pressed against an upper surface of the substrate. [Effects of the Invention]

[0015] According to the present invention, it is possible to provide a substrate processing apparatus that can clean the back surface of a substrate with strong pressure while suppressing damage to the substrate. [Brief explanation of the drawings]

[0016] [Figure 1] 1 is a schematic plan view showing a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is a schematic diagram of a processing unit according to one embodiment of the present invention. [Figure 3]FIG. 2 is a cross-sectional view showing the structure around a spin base according to an embodiment of the present invention. [Figure 4] FIG. 2 is a cross-sectional view showing the structure around a spin base according to an embodiment of the present invention. [Figure 5] FIG. 1 is a perspective view showing the structure of a spin base according to an embodiment of the present invention. [Figure 6] FIG. 2 is a cross-sectional view showing the structure around a spin base according to an embodiment of the present invention. [Figure 7] FIG. 2 is a cross-sectional view showing the structure around a chuck pin according to an embodiment of the present invention. [Figure 8] 1 is a cross-sectional view showing a state in which a substrate clamped by chuck pins according to an embodiment of the present invention is deformed into an upwardly convex shape. [Figure 9] 1 is a cross-sectional view showing a state in which a brush according to an embodiment of the present invention is pressed against a substrate that has been deformed into an upwardly convex shape. [Figure 10] 1 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference symbols, and description thereof will not be repeated. For ease of understanding, the X-axis, Y-axis, and Z-axis are appropriately illustrated in the drawings. The X-axis, Y-axis, and Z-axis are mutually orthogonal, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. In addition, hatching indicating cross sections may be omitted in the drawings for ease of viewing. Furthermore, the radial direction relative to the first rotation axis AX1 of the substrate W will be referred to as the "radial direction RD," the circumferential direction relative to the first rotation axis AX1 will be referred to as the "circumferential direction CD," and the direction substantially parallel to the first rotation axis AX1 will be referred to as the "axial direction AD."

[0018] 1 to 10, a substrate processing apparatus 100 according to one embodiment of the present invention will be described. The substrate processing apparatus 100 processes a substrate W. The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. In this embodiment, the substrate W is a semiconductor wafer. The substrate W is, for example, substantially disk-shaped.

[0019] 1 is a schematic plan view showing a substrate processing apparatus 100 according to this embodiment. As shown in FIG. 1, the substrate processing apparatus 100 includes a plurality of processing units 1, a fluid cabinet 100A, a plurality of fluid boxes 100B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a control device 101.

[0020] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports the substrates W between the load port LP and the center robot CR. The center robot CR transports the substrates W between the indexer robot IR and the processing units 1. The center robot CR has a hand H that supports the lower surface of the substrate W. Each processing unit 1 supplies a processing fluid to the substrate W to process the substrate W. The fluid cabinet 100A accommodates the processing fluid.

[0021] In this embodiment, the processing fluid is a processing liquid or a processing gas. The processing fluid is not particularly limited as long as it is a fluid that comes into contact with the substrate W. The processing liquid as the processing fluid is, for example, a chemical liquid or a rinse liquid.

[0022] The chemical solution may be, for example, dilute hydrofluoric acid (DHF), hydrofluoric acid (HF), hydronitric acid (a mixture of hydrofluoric acid and nitric acid (HNO3)), buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), phosphoric acid (H3PO4), sulfuric acid, acetic acid, nitric acid, hydrochloric acid, ammonia water, hydrogen peroxide water, organic acid (e.g., citric acid, oxalic acid), organic alkali (e.g., TMAH: tetramethylammonium hydroxide), sulfuric acid hydrogen peroxide water mixture (SPM), ammonia hydrogen peroxide water mixture (SC1), hydrochloric acid hydrogen peroxide water mixture (SC2), isopropyl alcohol (IPA), surfactant, corrosion inhibitor, or hydrophobizing agent.

[0023] The rinse liquid is, for example, deionized water, carbonated water, electrolytic ionized water, hydrogen water, ozone water, or hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm).

[0024] The processing gas as the processing fluid is, for example, a reactive gas that reacts with the substrate W or an inert gas. The reactive gas is, for example, ozone gas, fluorine gas, a gas containing hydrogen fluoride, or a gas containing IPA. The inert gas is, for example, nitrogen, helium, or argon.

[0025] The multiple processing units 1 form multiple towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes multiple processing units 1 stacked vertically (three processing units 1 in FIG. 1). Each fluid box 100B corresponds to one of the multiple towers TW. The processing fluid in the fluid cabinet 100A is supplied to all processing units 1 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.

[0026] The control device 101 controls the operation of each part of the substrate processing apparatus 100. For example, the control device 101 controls the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 103.

[0027] The control unit 102 includes a processor such as a CPU (Central Processing Unit). The processor of the control unit 102 executes a computer program stored in a storage device of the storage unit 103 to control the processing unit 1.

[0028] The storage unit 103 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0029] The storage unit 103 includes a main storage device. The main storage device is, for example, a semiconductor memory. The storage unit 103 may further include an auxiliary storage device. The auxiliary storage device includes, for example, at least one of a semiconductor memory and a hard disk drive. The storage unit 103 may include removable media. The control unit 102 controls the operation of each unit of the substrate processing apparatus 100 based on the computer programs and data stored in the storage unit 103.

[0030] Next, the processing unit 1 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the processing unit 1 of this embodiment. More specifically, Fig. 2 is a schematic cross-sectional view of the processing unit 1.

[0031] As shown in FIG. 2, the processing unit 1 processes the object constituting the substrate W using a processing liquid. The processing unit 1 is configured to be able to process at least the back surface Wb of the substrate W. Below, a case where the processing unit 1 processes the back surface Wb of the substrate W will be described. The back surface Wb of the substrate W is the surface on which no devices are formed and on which the substrate body made of silicon or the like is exposed. The front surface Wa of the substrate W is the surface on which devices are formed and on which a layer made of a material different from the substrate body (for example, a silicon oxide film, a silicon nitride film, or a resist) is formed. The back surface Wb of the substrate W is the top surface of the substrate W, and the front surface Wa of the substrate W is the bottom surface of the substrate W.

[0032] The processing unit 1 includes a spin base SB, a plurality of chuck pins 37, a cleaning mechanism 10, and lift pins 35. Specifically, the processing unit 1 includes a chamber 2, a spin chuck 3, a spin motor unit 5, the cleaning mechanism 10, a processing liquid supply unit 20, a gas supply unit 30, and a plurality of guards 8.

[0033] The chamber 2 has a substantially box-like shape and accommodates the substrate W, the spin chuck 3, the spin motor unit 5, the cleaning mechanism 10, and part of the processing liquid supply unit 20.

[0034] The spin chuck 3 holds the substrate W horizontally. Specifically, the spin chuck 3 has a spin plate 31, a spin shaft 33, multiple lift pins 35 (see FIG. 3), and multiple chuck pins 37. The spin plate 31 is a substantially disk-shaped member. The spin plate 31 faces the front surface Wa (lower surface) of the substrate W. A spin shaft 33 is fixed to the spin plate 31, and the spin plate 31 rotates integrally with the spin shaft 33. As will be described later, the upper part of the spin shaft 33 and the spin plate 31 form a spin base SB that rotates the substrate W. Therefore, the spin base SB, which will be described later, is rotatable about a first rotation axis AX1 that extends vertically.

[0035] FIG. 3 is a cross-sectional view showing the structure around the spin base SB of this embodiment. FIG. 4 is a cross-sectional view showing the structure around the spin base SB of this embodiment. As shown in FIG. 3, a plurality of lift pins 35 are arranged along the peripheral edge of the spin plate 31. The plurality of lift pins 35 support the edge of the front surface Wa (lower surface) of the substrate W. As shown in FIG. 4, a plurality of chuck pins 37 are arranged along the peripheral edge of the spin plate 31. The plurality of chuck pins 37 grip the edge of the substrate W. In this embodiment, "gripping the substrate" means holding the substrate W by sandwiching it in the thickness direction. The detailed structure of the spin chuck 3 will be described later.

[0036] As shown in FIG. 2, the spin motor unit 5 rotates the substrate W and the spin chuck 3 together around a first rotation axis AX1. The first rotation axis AX1 is an example of the "rotation axis" in the present invention. The first rotation axis AX1 extends in the up-down direction. In this embodiment, the first rotation axis AX1 extends vertically. More specifically, the spin motor unit 5 rotates the spin shaft 33 around the first rotation axis AX1. Therefore, the spin shaft 33 and the spin plate 31 rotate around the first rotation axis AX1. As a result, the substrate W held by the multiple chuck pins 37 rotates around the first rotation axis AX1.

[0037] The cleaning mechanism 10 is disposed above the substrate W and physically cleans the back surface Wb (upper surface) of the substrate W. Specifically, the cleaning mechanism 10 has a brush 11 that is pressed against the back surface Wb (upper surface) of the substrate W. Therefore, by pressing the brush 11 against the back surface Wb (upper surface) of the substrate W, the back surface Wb (upper surface) can be easily cleaned.

[0038] The brush 11 comes into contact with the substrate W to clean the substrate W. More specifically, the brush 11 comes into contact with the rotating substrate W to clean the substrate W. Here, the brush 11 cleans the back surface Wb (upper surface) of the substrate W. The brush 11 includes, for example, a porous material. The brush 11 includes, for example, a sponge. The brush 11 may also include, for example, a resin. The brush 11 may also include, for example, polyvinyl alcohol (PVA). The brush 11 may also be configured by combining a plurality of members. The brush 11 may also include a plurality of bristles.

[0039] The cleaning mechanism 10 also has a brush moving mechanism 13. The brush moving mechanism 13 has an arm 131, a brush rotation shaft 133, and a brush drive unit 135. The arm 131 extends in a substantially horizontal direction. The arm 131 holds the brush 11. The brush 11 is held at one end of the arm 131. The brush 11 may be fixed to the arm 131, or may be rotatable relative to the arm 131. If the brush 11 is rotatable relative to the arm 131, the brush moving mechanism 13 may have a rotation drive unit (not shown) that rotates the brush 11 relative to the arm 131.

[0040] The brush driving unit 135 rotates the brush rotation shaft 133 about the second rotation axis AX2, thereby rotating the arm 131 and the brush 11 about the second rotation axis AX2. The brush driving unit 135 includes, for example, a stepping motor.

[0041] Furthermore, the brush driving unit 135 moves the brush rotation shaft 133 in the vertical direction. In this case, the brush driving unit 135 includes, for example, a ball screw mechanism and a motor that imparts a driving force to the ball screw mechanism. The brush driving unit 135 moves the brush rotation shaft 133 in the vertical direction, thereby moving the arm 131 and the brush 11 in the vertical direction. Specifically, the brush driving unit 135 moves the brush 11 between a separated position and a pressing position. The separated position is a position where the brush 11 is separated upward from the back surface Wb (top surface) of the substrate W. The pressing position is a position where the brush 11 presses the back surface Wb of the substrate W.

[0042] The control of the pressing force of the brush 11 against the substrate W may be, for example, stroke control, or pressure or load control. Specifically, the brush driving unit 135 may lower the brush 11 a predetermined distance (for example, several hundred μm or less) after the tip (lower end) of the brush 11 comes into contact with the back surface Wb (upper surface) of the substrate W. Furthermore, the brush driving unit 135 may lower the brush 11 until the pressure or load of the brush 11 against the substrate W reaches a predetermined value.

[0043] The processing liquid supply unit 20 includes a nozzle 21 and a processing liquid supply mechanism 23. The nozzle 21 ejects the processing liquid onto the back surface Wb (upper surface) of the substrate W. Specifically, the nozzle 21 ejects the processing liquid onto the back surface Wb (upper surface) of the substrate W while it is rotating. The type of processing liquid ejected by the nozzle 21 is not particularly limited, but in this embodiment, it is a rinse liquid. The processing liquid supply mechanism 23 includes a supply pipe 231 through which the processing liquid passes and a valve 233 that opens and closes the supply pipe 231. The supply pipe 231 is a tubular member through which the processing liquid flows. The processing liquid supply unit 20 may include a drive mechanism (not shown) that moves the nozzle 21 horizontally and / or vertically.

[0044] Each of the guards 8 has a generally cylindrical shape. The guards 8 receive the processing liquid discharged from the substrate W.

[0045] The gas supply unit 30 supplies a processing gas to the space S between the upper surface 31a of the spin plate 31 and the surface Wa (lower surface) of the substrate W. In this embodiment, the gas supply unit 30 supplies nitrogen gas. In this embodiment, the gas supply unit 30 supplies the processing gas to the space S between the upper surface 31a of the spin plate 31 and the surface Wa (lower surface) of the substrate W by feeding the processing gas into the spin shaft 33. The gas supply unit 30 also has a valve 301 that can adjust the flow rate of the gas fed to the space S.

[0046] Next, the detailed structure of the spin chuck 3 will be described with reference to Fig. 3 to Fig. 7. Fig. 5 is a perspective view showing the structure of the spin base SB of this embodiment. Fig. 6 is a cross-sectional view showing the structure around the spin base SB of this embodiment. Fig. 7 is a cross-sectional view showing the structure around the chuck pin 37 of this embodiment.

[0047] 3, spin plate 31 has an insertion hole 31b. Insertion hole 31b is formed in the center of spin plate 31. A spin shaft 33 is inserted into insertion hole 31b. A portion of spin shaft 33 that is disposed within insertion hole 31b (an upper portion of spin shaft 33) and spin plate 31 form a spin base SB.

[0048] The spin shaft 33 has a shaft portion 33a and a disk-shaped plate portion 33b connected to the upper end of the shaft portion 33a. The spin shaft 33 has a through-hole 33c that passes through the shaft portion 33a in the longitudinal direction. A gas supply pipe 40 provided in the processing unit 1 is arranged inside the through-hole 33c.

[0049] The spin shaft 33 and the spin plate 31 rotate about the first axis of rotation AX1, while the gas supply pipe 40 does not rotate.

[0050] The lower end of the gas supply pipe 40 is connected to the gas supply unit 30 (see FIG. 2). The upper end of the gas supply pipe 40 extends to the plate portion 33b. The upper surface 33d of the plate portion 33b is provided with a plurality of (eight in this example) gas discharge ports 33e connected to the through holes 33c. The gas discharge ports 33e are an example of the "gas discharge port" of the present invention. The plurality of gas discharge ports 33e are arranged at equal angular intervals around the first axis of rotation AX1. The number of gas discharge ports 33e is not particularly limited and may be one or more.

[0051] Gas sent from the gas supply unit 30 to the gas supply pipe 40 passes through the gas supply pipe 40 and is discharged from the gas discharge ports 33e. That is, the gas that has passed through the gas supply pipe 40 is supplied to the space S between the upper surface 31a of the spin plate 31 and the front surface Wa (lower surface) of the substrate W. Several tens of liters or more of gas are discharged per minute from the multiple gas discharge ports 33e into the space S. It is preferable that 100 liters or more of gas be discharged per minute from the multiple gas discharge ports 33e into the space S.

[0052] Spin base SB has a seal member 39. The seal member 39 is, for example, an O-ring. The seal member 39 seals the gap between the outer circumferential surface of spin shaft 33 and the inner circumferential surface of spin plate 31. Therefore, leakage of gas supplied to space S from the gap between spin shaft 33 and spin plate 31 can be suppressed.

[0053] In this embodiment, the spin base SB has a peripheral portion Ra and a central portion Rb disposed inside the peripheral portion Ra in the radial direction RD. The peripheral portion Ra of the spin base SB is the same portion as the peripheral portion of the spin plate 31. The central portion Rb of the spin base SB is formed by the central portion of the spin plate 31 and an upper portion of the spin shaft 33.

[0054] As shown in FIGS. 3 to 5, the spin base SB has a plurality of first recesses 311 and a plurality of second recesses 313 arranged on the peripheral edge portion Ra. In this embodiment, the plurality of first recesses 311 are arranged at equal angular intervals around the first rotation axis AX1. The plurality of second recesses 313 are arranged at equal angular intervals around the second rotation axis AX2. The first recesses 311 and the second recesses 313 are arranged alternately in the circumferential direction.

[0055] The depth of the first recess 311 is greater than the depth of the second recess 313. A lift pin 35 is disposed within the first recess 311. The lift pin 35 has a support surface 35a that supports the substrate W and a protrusion 35b that protrudes upward from the support surface 35a. The support surface 35a is inclined downward toward the center of the substrate W (first rotation axis AX1). The protrusion 35b restricts the substrate W from moving outward in the radial direction RD.

[0056] The processing unit 1 further includes a pin lifting mechanism 50, which raises and lowers the lift pins 35. For example, one pin lifting mechanism 50 may be provided for all the lift pins 35, or one may be provided for each lift pin 35. The pin lifting mechanism 50 includes, for example, a ball screw mechanism and a motor that applies a driving force to the ball screw mechanism. Specifically, the pin lifting mechanism 50 raises and lowers the lift pins 35, causing the lift pins 35 to raise and lower the substrate W between a first height position P1 (position in FIG. 3 ) and a second height position P2 (position in FIG. 6 ). The second height position P2 is lower than the first height position P1. When the substrate W is positioned at the first height position P1, the hand H of the center robot CR can be inserted into the gap (space S) between the substrate W and the spin base SB. On the other hand, when the substrate W is positioned at the second height position P2, the hand H cannot be inserted into the gap (space S) between the substrate W and the spin base SB. As described below, the lift pins 35 are separated from the surface Wa (lower surface) of the substrate W placed at the second height position P2 with the lower surfaces 35c of the lift pins 35 in contact with the bottom surface 311a of the first recess 311.

[0057] As shown in FIG. 4, a plurality of chuck pins 37 are disposed in the second recess 313. The plurality of chuck pins 37 are configured to horizontally grip the substrate W at the second height position P2. As shown in FIG. 7, the plurality of chuck pins 37 have a contact surface 372a that contacts the substrate W when gripping the substrate W, and an opposing surface 371a that extends substantially horizontally from the lower end of the contact surface 372a. Specifically, the chuck pin 37 has a pin body 371 disposed in the second recess 313 and a protrusion 372 that protrudes upward from the pin body 371. The pin body 371 is formed in a substantially cylindrical shape. Therefore, the pin body 371 is rotatable within the second recess 313. The pin body 371 has an opposing surface 371a. The opposing surface 371a is the upper surface of the pin body 371. The facing surface 371a faces the front surface Wa (lower surface) of the substrate W when the substrate W is gripped by the plurality of chuck pins 37.

[0058] The protrusion 372 protrudes upward from the opposing surface 371a. The protrusion 372 has an abutment surface 372a that abuts against the peripheral edge of the substrate W. The shape of the abutment surface 372a is not particularly limited as long as it is capable of gripping the substrate W, but in this embodiment, it is formed in a dogleg shape (also referred to as a V-shape). Specifically, the abutment surface 372a has an upper surface 372b that presses the substrate W from above downward, and a lower surface 372c that presses the substrate W from below upward. The upper surface 372b is inclined upward toward the center of the substrate W. The lower surface 372c is inclined downward toward the center of the substrate W.

[0059] The processing unit 1 further includes a pin rotation mechanism 60 (see FIG. 4). The pin rotation mechanism 60 rotates the chuck pins 37 about the third rotation axis AX3. For example, one pin rotation mechanism 60 may be provided for all the chuck pins 37, or one may be provided for each chuck pin 37. The pin rotation mechanism 60 includes, for example, a stepping motor. The protrusions 372 are disposed at positions offset from the third rotation axis AX3, and when the chuck pins 37 are rotated, the protrusions 372 move slightly in the radial direction RD of the substrate W. The chuck pins 37 are formed such that the protrusions 372 are spaced apart from the substrate W when the chuck pins 37 are not gripping the substrate W. The chuck pins 37 are formed such that the protrusions 372 come into contact with the substrate W when gripping the substrate W. The chuck pins 37 are also formed such that the contact surfaces 372a face inward in the radial direction RD of the substrate W when gripping the substrate W.

[0060] Next, the detailed structures of the spin base SB and the chuck pins 37 will be further described with reference to Fig. 7 to Fig. 9. Fig. 8 is a cross-sectional view showing a state in which the substrate W clamped by the chuck pins 37 of this embodiment is deformed into an upwardly convex shape. Fig. 9 is a cross-sectional view showing a state in which the brush 11 of this embodiment is pressed against the substrate W deformed into an upwardly convex shape.

[0061] 7, when the chuck pins 37 grip the substrate W, the facing surface 371a is adjacent to the upper surface Ra1 of the peripheral portion Ra of the spin base SB and is disposed at approximately the same height as the upper surface Ra1 of the peripheral portion Ra of the spin base SB. The facing surface 371a extends approximately horizontally from the lower end of the abutting surface 372a, so that the gap between the facing surface 371a and the surface Wa (lower surface) of the substrate W is small. Furthermore, because the upper surface Ra1 of the peripheral portion Ra is disposed at approximately the same height as the facing surface 371a, the gap between the upper surface Ra1 of the peripheral portion Ra and the surface Wa (lower surface) of the substrate W is also small. Therefore, the gas supplied from the gas discharge port 33e to the space S between the upper surface 31a of the spin plate 31 and the surface Wa (lower surface) of the substrate W is unlikely to be exhausted to the outside of the space S. This increases the gas pressure in the space S. Therefore, even when the brush 11 is pressed strongly against the back surface Wb (upper surface) of the substrate W, it is possible to prevent the substrate W from being deformed into a downward convex shape. This makes it possible to prevent the substrate W from cracking and the front surface Wa (lower surface), which is the device formation surface of the substrate W, from coming into contact with the spin base SB.

[0062] In this embodiment, the opposing surface 371a being disposed at approximately the same height as the upper surface Ra1 means that the difference in height between the opposing surface 371a and the upper surface Ra1 is 0.3 mm or less. The difference in height between the opposing surface 371a and the upper surface Ra1 is preferably 0.2 mm or less, and more preferably 0.1 mm or less.

[0063] 8 and 9, the cleaning mechanism 10 cleans the back surface Wb (upper surface) of the substrate W while the substrate W is deformed into an upwardly convex shape. Therefore, even if the brush 11 is pressed with a strong pressure against the back surface Wb (upper surface) of the substrate W, it is possible to further prevent the substrate W from cracking or the front surface Wa (lower surface) of the substrate W from coming into contact with the spin base SB.

[0064] In this embodiment, the back surface Wb (upper surface) of the substrate W is cleaned by the cleaning mechanism 10 while supplying gas at 100 liters per minute or more from the gas discharge ports 33e. By supplying gas at 100 liters per minute or more from the gas discharge ports 33e in this manner, the substrate W is deformed into an upwardly convex shape. Therefore, even if the brush 11 is pressed against the back surface Wb (upper surface) of the substrate W with a strong pressure, it is possible to easily prevent the substrate W from cracking or the front surface Wa (lower surface) of the substrate W from coming into contact with the spin base SB.

[0065] As shown in FIG. 7, when the chuck pins 37 grip the substrate W, the distance L1 between the upper surface Ra1 of the peripheral portion Ra of the spin base SB and the surface Wa (lower surface) of the substrate W is 2 mm or less. When the chuck pins 37 grip the substrate W, the distance L1 is preferably 1 mm or less. In this embodiment, when the chuck pins 37 grip the substrate W, the distance L1 is approximately 0.5 mm. By setting the distance L1 between the upper surface Ra1 of the peripheral portion Ra of the spin base SB and the surface Wa (lower surface) of the substrate W to 2 mm or less, the gas supplied from the gas discharge port 33e to the space S can be easily prevented from being discharged to the outside of the space S. This makes it easy to increase the air pressure in the space S. Furthermore, by setting the distance L1 to 1 mm or less, the gas supplied from the gas discharge port 33e to the space S can be even more prevented from being discharged to the outside of the space S. This makes it possible to further increase the air pressure in the space S.

[0066] In this embodiment, the upper surface Rb1 of the central portion Rb of the spin base SB is located at a position lower than the upper surface Ra1 of the peripheral portion Ra. Therefore, even if the substrate W is warped in a downward convex shape, the front surface Wa of the substrate W can be prevented from coming into contact with the spin plate 31 (spin base SB).

[0067] Specifically, the peripheral edge portion Ra has an upper surface Ra1 that extends substantially horizontally and an inclined surface Ra2. As shown in Fig. 7, in a cross section passing through the first axis of rotation AX1 and the third axis of rotation AX3, the length LRa1 of the upper surface Ra1 is preferably 0.5 mm or more, and more preferably 1 mm or more. In this embodiment, the length LRa1 is 1 mm or more and 2 mm or less.

[0068] The inclined surface Ra2 connects the upper surface Ra1 and the upper surface Rb1 of the central portion Rb. The inclination angle θRa2 of the inclined surface Ra2 with respect to the horizontal plane is not particularly limited, but is preferably 45 degrees or less. By setting the inclination angle θRa2 to 45 degrees or less, gas in the space S flows smoothly into the gap between the upper surface Ra1 of the peripheral portion Ra and the surface Wa of the substrate W. Furthermore, the inclination angle θRa2 is preferably 20 degrees or more. By setting the inclination angle θRa2 to 20 degrees or more, the central portion Rb can be brought closer to the peripheral edge of the substrate W. In other words, the upper surface 31a of the spin plate 31 (spin base SB) can be recessed from a portion close to the peripheral edge of the substrate W. Therefore, even if the substrate W has a downwardly convex warp, the surface Wa of the substrate W can be effectively prevented from contacting the spin plate 31 (spin base SB).

[0069] 3 and 5, in this embodiment, the upper surface Rb1 of the central portion Rb is a flat surface on which the gas discharge ports 33e are provided. In other words, the upper surface 31a of the spin plate 31 and the upper surface 33d of the plate portion 33b of the spin shaft 33 are flush with each other, and the upper surface 33d of the plate portion 33b is provided with the gas discharge ports 33e. By making the upper surface Rb1 of the central portion Rb a flat surface on which the gas discharge ports 33e are provided, it is possible to prevent the front surface Wa (lower surface) of the substrate W from coming into contact with the central portion Rb, compared to, for example, a case in which the gas discharge ports 33e are formed above the upper surface Rb1.

[0070] 7, when the chuck pins 37 grip the substrate W, the distance L2 between the upper surface Rb1 of the central portion Rb of the spin base SB and the surface Wa (lower surface) of the substrate W is 3 mm or less. When the chuck pins 37 grip the substrate W, the distance L2 is preferably 2 mm or less. In this embodiment, when the chuck pins 37 grip the substrate W, the distance L2 is approximately 1.0 m.

[0071] Next, a substrate processing method according to this embodiment will be described with reference to Fig. 10. In the description of the substrate processing method, Figs. 1 to 9 will also be referred to as appropriate. The substrate processing method is performed by a substrate processing apparatus 100. Fig. 10 is a flowchart showing the substrate processing method according to this embodiment. As shown in Fig. 10, the substrate processing method includes steps S1 to S13.

[0072] In step S1, the control unit 102 controls the indexer robot IR and the center robot CR to load the substrate W from the load port LP into the processing unit 1. As a result, the substrate W is loaded from the load port LP into the processing unit 1. At this time, the lower surface (here, the front surface Wa) of the substrate W is supported by the hand H of the center robot CR.

[0073] Next, in step S2, the control unit 102 controls the center robot CR and the lift pins 35 so that the lift pins 35 support the substrate W. Specifically, with the lift pins 35 positioned at a raised position, the hand H is lowered from above the spin base SB. Then, the lower surface of the substrate W is placed on the support surfaces 35a of the lift pins 35, and the hand H is separated from the lower surface of the substrate W. As a result, the substrate W is supported by the lift pins 35. The substrate W is transferred from the hand H to the lift pins 35 at the first height position P1 (see FIG. 3).

[0074] Next, in step S3, the control unit 102 controls the lift pins 35 and the chuck pins 37 so that the chuck pins 37 clamp the substrate W. Specifically, the lift pins 35 are lowered while supporting the substrate W (see FIG. 6). At this time, the lift pins 35 stop lowering when the substrate W reaches the second height position P2. In this state, the chuck pins 37 are rotated about the third rotation axis AX3. As a result, the contact surfaces 372a of the chuck pins 37 contact the peripheral edges of the substrate W, and the chuck pins 37 clamp the substrate W (see FIG. 4). Then, the lift pins 35 are further lowered slightly. As a result, the support surfaces 35a of the lift pins 35 are separated from the substrate W. The substrate W is clamped by the chuck pins 37 at the second height position P2.

[0075] Next, in step S4, the control unit 102 controls the gas supply unit 30 to supply gas to the space S between the spin base SB and the substrate W. Specifically, the valve 301 of the gas supply unit 30 opens the gas flow path. This causes 100 liters or more of gas per minute to be discharged into the space S. Then, the gas pressure in the space S increases, and the substrate W is deformed into an upwardly convex shape (see FIG. 8).

[0076] Next, in step S5, the control unit 102 controls the spin motor unit 5 to start rotating the substrate W. As a result, the spin chuck 3 rotates while holding the substrate W.

[0077] Next, in step S6, the control unit 102 controls the processing liquid supply unit 20 to supply the rinse liquid to the back surface Wb (upper surface) of the substrate W. Specifically, the valve 233 of the processing liquid supply mechanism 23 opens the supply pipe 231. This causes the rinse liquid to be discharged from the nozzle 21 to the back surface Wb (upper surface) of the substrate W. At this time, the gas in the space S is discharged outward in the radial direction RD from between the front surface Wa (lower surface) of the substrate W and the facing surfaces 371a of the chuck pins 37 and from between the front surface Wa (lower surface) of the substrate W and the upper surface Ra1 of the peripheral portion Ra, thereby preventing the rinse liquid from getting around to the front surface Wa (lower surface) of the substrate W.

[0078] Next, in step S7, the control unit 102 controls the brush moving mechanism 13 so that the brush 11 presses against the back surface Wb (upper surface) of the substrate W. Specifically, the brush moving mechanism 13 lowers the brush 11 from above the substrate W, and presses the brush 11 against the back surface Wb (upper surface) of the substrate W (see FIG. 9). This cleans the back surface Wb (upper surface) of the substrate W. When the brush 11 has been pressing against the substrate W for a predetermined time, the process proceeds to step S8.

[0079] Next, in step S8, the control unit 102 controls the brush moving mechanism 13 to release the brush 11 from pressing against the substrate W. Specifically, the brush moving mechanism 13 raises the brush 11 and moves the brush 11 away from the substrate W.

[0080] Next, in step S9, the control unit 102 controls the processing liquid supply unit 20 to stop the supply of the rinsing liquid to the substrate W. Specifically, the valve 233 of the processing liquid supply mechanism 23 closes the supply pipe 231. This stops the discharge of the rinsing liquid from the nozzle 21 to the substrate W.

[0081] Next, in step S10, the control unit 102 controls the spin motor unit 5 to stop the rotation of the substrate W. As a result, the rotation of the spin chuck 3 and the substrate W stops.

[0082] Next, in step S11, the control unit 102 controls the gas supply unit 30 to stop the supply of gas to the space S. Specifically, the valve 301 of the gas supply unit 30 closes the gas flow path. This stops the supply of gas to the space S.

[0083] Next, in step S12, the control unit 102 controls the lift pins 35 and the chuck pins 37 so that the lift pins 35 support the substrate W. Specifically, the lift pins 35 are slightly raised. As a result, the lift pins 35 come into contact with the front surface Wa (lower surface) of the substrate W or approach the front surface Wa (lower surface) of the substrate W. Then, the chuck pins 37 are rotated about the third rotation axis AX3. As a result, the substrate W is released from the clamping by the chuck pins 37, and the substrate W is supported by the support surfaces 35a of the lift pins 35. In other words, the lift pins 35 support the substrate W.

[0084] Next, in step S13, the control unit 102 controls the lift pins 35, the center robot CR, and the indexer robot IR so as to unload the substrate W from the processing unit 1. Specifically, the lift pins 35 are raised while holding the substrate W. At this time, the lift pins 35 stop raising when the substrate W reaches the first height position P1. Then, the hand H of the center robot CR is inserted between the substrate W and the spin base SB. Thereafter, the hand H is raised, and the substrate W is transferred from the lift pins 35 to the hand H. Then, the substrate W is moved to the load port LP via the center robot CR and the indexer robot IR.

[0085] In this manner, the cleaning process for the back surface Wb (upper surface) of the substrate W is completed.

[0086] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be implemented in various forms without departing from the spirit of the present invention. Furthermore, the components disclosed in the above embodiments can be modified as appropriate. For example, some of the components shown in one embodiment may be added to the components of another embodiment, or some of the components shown in one embodiment may be deleted from the embodiment.

[0087] Furthermore, the drawings mainly show each component in a schematic manner to facilitate understanding of the invention, and the thickness, length, number, spacing, etc. of each component shown in the drawings may differ from the actual ones due to the convenience of creating the drawings. Furthermore, the configuration of each component shown in the above embodiment is merely an example and is not particularly limited, and it goes without saying that various modifications are possible within a range that does not substantially deviate from the effects of the present invention.

[0088] For example, in the above embodiment, an example was shown in which the top surface Rb1 of the center portion Rb of the spin base SB is a flat surface, but the present invention is not limited to this. The top surface Rb1 of the center portion Rb of the spin base SB does not have to be a flat surface. For example, it may be further recessed toward the inside in the radial direction RD.

[0089] In the above embodiment, the peripheral portion Ra of the spin base SB is positioned higher than the central portion Rb, but the present invention is not limited to this. The peripheral portion Ra and the central portion Rb of the spin base SB may be formed flush with each other.

[0090] In the above embodiment, the opposing surface 371a of the chuck pin 37 extends substantially horizontally, but the present invention is not limited to this. The opposing surface 371a does not have to extend substantially horizontally, and may, for example, be inclined downward toward the inside in the radial direction RD.

[0091] In the above embodiment, the cleaning mechanism 10 for physically cleaning the substrate W includes the brush 11, but the present invention is not limited to this. For example, the cleaning mechanism 10 for physically cleaning the substrate W may be one that cleans the substrate W by spraying high-pressure cleaning water, thereby cleaning the substrate W by physical impact or water pressure.

[0092] Furthermore, in the above embodiment, an example has been shown in which the same amount of gas is supplied to the space S when the brush 11 is pressed against the substrate W (step S7) and when the rinsing liquid is discharged onto the substrate W without pressing the brush 11 (steps S6 and S8), but the present invention is not limited to this. For example, the amount of gas supplied when the rinsing liquid is discharged onto the substrate W without pressing the brush 11 (steps S6 and S8) may be less than the amount of gas supplied when the brush 11 is pressed against the substrate W (step S7). In this case as well, it is possible to prevent the rinsing liquid from getting around to the front surface Wa (lower surface) of the substrate W in steps S6 and S8. [Industrial Applicability]

[0093] The present invention relates to a substrate processing apparatus and has industrial applicability. [Explanation of symbols]

[0094] 10: Cleaning mechanism 11: Brush 33e: Gas outlet (gas outlet) 35: Lift pin 37: Zipper pin 100: Substrate processing apparatus 371a: Opposite surface 372a: Contact surface AX1: First rotation axis (rotation axis) L1: distance P1: First height position P2: Second height position Ra: Periphery Ra1:Top surface Rb: central part Rb1:Top surface SB: Spin base W: Substrate Wa: Surface (bottom surface) Wb: Back side (top side)

Claims

1. a spin base provided rotatably about a rotation axis extending vertically; a plurality of chuck pins disposed on a periphery of the spin base; a cleaning mechanism disposed above the substrate and configured to physically clean the upper surface of the substrate; lift pins that raise and lower the substrate between a first height position and a second height position that is lower than the first height position; Equipped with the plurality of chuck pins are configured to horizontally grip the substrate at the second height; the plurality of chuck pins each have a contact surface that contacts the substrate when gripping the substrate, and an opposing surface that extends from a lower end of the contact surface in a direction intersecting with a vertical direction, the facing surface faces a lower surface of the substrate when the plurality of chuck pins grip the substrate, when the plurality of chuck pins grip the substrate, the facing surface is adjacent to an upper surface of the peripheral portion of the spin base and is disposed at approximately the same height as the upper surface of the peripheral portion of the spin base; the spin base has a gas discharge port on an upper surface thereof for discharging gas; the spin base has the peripheral portion and a central portion disposed radially inward from the peripheral portion, an upper surface of the central portion is located at a position lower than an upper surface of the peripheral portion; The upper surface of the peripheral portion is adjacent to the opposing surface on the inner side in the radial direction.

2. The substrate processing apparatus according to claim 1 , wherein the cleaning mechanism cleans the upper surface of the substrate in a state in which the substrate is deformed into an upwardly convex shape by the gas discharged from the gas discharge port.

3. 3. The substrate processing apparatus according to claim 1, wherein the distance between the upper surface of the peripheral portion of the spin base and the lower surface of the substrate is 2 mm or less.

4. The substrate processing apparatus according to claim 3 , wherein the distance between the upper surface of the peripheral portion of the spin base and the lower surface of the substrate is 1 mm or less.

5. The substrate processing apparatus according to claim 4 , wherein an upper surface of the central portion is a flat surface on which the gas discharge port is provided.

6. 6. The substrate processing apparatus according to claim 1, wherein the cleaning mechanism cleans the upper surface of the substrate while discharging the gas from the gas discharge port at a rate of 100 liters per minute or more.

7. The substrate processing apparatus according to claim 1 , wherein the cleaning mechanism includes a brush that is pressed against an upper surface of the substrate.

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