Substrate processing apparatus and substrate processing method

Abstract

This substrate processing device comprises a first substrate holding part, a cup, a processing fluid supply part, and a processing tank. The first substrate holding part suctions a lower surface center section of a substrate and holds the substrate horizontally. The cup is open in a ring shape in the vertical direction and surrounds the outer periphery of the substrate held by the first substrate holding part. The processing fluid supply part supplies a processing fluid to the substrate surrounded by the cup. The processing tank recovers the processing fluid falling from the cup. The inner wall surface of the processing tank has a side surface and a bottom surface and at least a portion of the bottom surface is a hydrophilic surface.

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 includes two suction pads, a liquid receiving cup, a spin chuck, a housing, a first cleaning unit, and a second cleaning unit. The two suction pads horizontally suction-hold the underside of the substrate. The liquid receiving cup is connected to the two suction pads. The spin chuck horizontally suction-holds the underside of the substrate received from the suction pads. The housing has an opening at its top. A drain pipe for discharging the cleaning liquid and an exhaust pipe for exhausting the airflow are provided at the bottom of the housing. The first cleaning unit cleans the upper surface of the substrate. The second cleaning unit cleans the lower surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-43156 Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides a technique for reducing particles adhering to a substrate. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes: The apparatus includes a substrate holder that holds a substrate horizontally, a first processing liquid supply unit that supplies a first processing liquid to the surface of the substrate held by the substrate holder, a second processing liquid supply unit that supplies a second processing liquid to the surface of the substrate held by the substrate holder to replace the first processing liquid, an electrometer that measures the potential of the outer periphery of the surface of the substrate held by the substrate holder, and a controller that controls the first processing liquid supply unit, the second processing liquid supply unit, and the electrometer. The controller controls the electrometer to measure measurement data regarding changes in the potential depending on the supply time of the second processing liquid and controls the measurement data to be stored in a memory unit. The controller determines the time to stop supplying the second processing liquid based on the time at which a difference between two potentials measured at a unit time interval in the measurement data stored in the memory unit reaches or falls below a threshold. [Effects of the Invention]

[0006] According to one aspect of the present disclosure, particles adhering to a substrate can be reduced. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment, and is a plan view showing an example of step S104 in FIG. [Figure 2] FIG. 2 is a cross-sectional view showing an example of step S104 in FIG. [Figure 3] FIG. 3 is a plan view showing an example of step S102 in FIG. [Figure 4] FIG. 4 is a cross-sectional view showing an example of step S102 in FIG. [Figure 5] FIG. 5 is a cross-sectional view showing an example of the operation of the relay member. [Figure 6] FIG. 6 is a cross-sectional view showing an example of the operation of the relay board, following FIG. [Figure 7] FIG. 7 is a flowchart showing a substrate processing method according to an embodiment. [Figure 8] FIG. 8 is a cross-sectional view showing an example of cleaning processing of a processing tank. [Figure 9] FIG. 9 is a cross-sectional view showing another example of the cleaning process of the processing tank. [Figure 10] FIG. 10 is a plan view showing a modified example of the first substrate holding part and the second substrate holding part. [Figure 11] FIG. 11 is a side view showing an example of the operation of the lift pins shown in FIG. 10 to receive the substrate. [Figure 12] FIG. 12 is a side view showing an example of the transfer of the substrate from the lift pins to the first substrate holding part, which is performed after the process of FIG. [Figure 13] FIG. 13 is a side view showing an example of the transfer of the substrate from the first substrate holding part to the second substrate holding part, which is performed after the process of FIG. [Figure 14] FIG. 14 is a side view showing an example of cleaning of the center portion of the lower surface of the substrate, which is performed after the process of FIG. [Figure 15] FIG. 15 is a plan view of FIG. [Figure 16] FIG. 16 is a plan view showing a modification of cleaning the central portion of the lower surface of the substrate, which is performed after the process of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each drawing, the same or corresponding components are denoted by the same reference numerals, and their description may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

[0009] An example of a substrate processing apparatus 1 will be described with reference to FIGS. 1 to 6. The substrate processing apparatus 1 processes a substrate W with a processing liquid. The substrate W is, for example, a semiconductor substrate or a glass substrate. The semiconductor substrate is, for example, a silicon wafer or a compound semiconductor wafer. A device may be formed in advance on at least one of the bottom surface and top surface of the substrate W. The device includes a semiconductor element, a circuit, a terminal, or the like.

[0010] As shown in FIG. 2, the substrate processing apparatus 1 mainly includes, for example, a first substrate holding unit 11, a second substrate holding unit 12, a rotation drive unit 13, a cup 20, a cup moving unit 25 (see FIG. 1), a processing liquid supply unit 30, a processing tank 40, a drain pipe 45, an exhaust pipe 46, an exhaust pipe cover 47, a friction body 50, a friction body moving unit 55, and a control unit 90 (see FIG. 1).

[0011] The first substrate holding unit 11 holds the substrate W horizontally by adsorbing the center of the lower surface of the substrate W. The first substrate holding unit 11 is, for example, a spin chuck, and is rotated by a rotation drive unit 13. The first substrate holding unit 11 is rotated about a vertical rotation center line. The first substrate holding unit 11 may be movable in the Z-axis direction.

[0012] A relay member 14 is arranged around the first substrate holding part 11. The relay member 14 has, for example, a plurality of lifting pins 141, which are arranged at equal intervals in the circumferential direction of the first substrate holding part 11. The relay member 14 moves up and down around the first substrate holding part 11, thereby transferring the substrate W between the first substrate holding part 11 or the second substrate holding part 12 and a transport arm (not shown).

[0013] In addition, a gas discharge ring 15 is disposed around the first substrate holding part 11. The gas discharge ring 15 surrounds the first substrate holding part 11 and forms a ring-shaped gas curtain toward the underside of the substrate W. The gas curtain prevents the processing liquid from entering from the outside to the inside, thereby protecting the first substrate holding part 11. The gas curtain also protects the relay member 14.

[0014] 3 and 4, the second substrate holding part 12 holds the substrate W horizontally by sucking the outer periphery of the lower surface of the substrate W. The second substrate holding part 12 includes a pair of suction pads 121, 122 arranged at a distance in the X-axis direction. The pair of suction pads 121, 122 are arranged to sandwich the first substrate holding part 11 in the X-axis direction. The second substrate holding part 12 is connected to the cup 20 and can move together with the cup 20 in the horizontal direction (Y-axis direction) and vertical direction.

[0015] The cup 20 is ring-shaped and open both vertically and horizontally, and surrounds the outer periphery of the substrate W held by the first substrate holding part 11 or the second substrate holding part 12. The cup 20 has a cylindrical vertical wall 21 and an upper wall 22 that protrudes radially inward from the upper end of the cylindrical vertical wall 21. The cup 20 receives the processing liquid supplied to the substrate W.

[0016] The cup moving unit 25 moves the cup 20 horizontally (in the Y-axis direction) inside the processing tank 40. The second substrate holding unit 12 is moved horizontally together with the cup 20. When viewed from above, the side surface 42 of the processing tank 40 surrounds the entire movement range of the cup 20, and the cup 20 is moved horizontally inside the processing tank 40. The cup moving unit 25 may also move the cup 20 vertically.

[0017] The processing liquid supply unit 30 supplies a processing liquid to the substrate W surrounded by the cup 20. The processing liquid includes, for example, a chemical liquid and a rinse liquid. The chemical liquid is not particularly limited, but may be, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). The chemical liquid may be a cleaning liquid that removes dirt from the substrate W, or may be an etching liquid or a stripping liquid. The rinse liquid is, for example, DIW (deionized water). The chemical liquid and the rinse liquid may be supplied to the substrate W in this order.

[0018] The processing liquid supply unit 30 has lower nozzles 31, 32 (see FIGS. 1 and 3) that supply processing liquid to the lower surface of the substrate W. The lower nozzles 31, 32 are each connected to a processing liquid supply source via piping (not shown). Valves and flow rate controllers are provided along the piping. When the valves open the flow paths of the piping, the processing liquid is ejected from the lower nozzles 31, 32. The ejection rate is controlled by the flow rate controller. On the other hand, when the valves close the flow paths of the piping, the ejection of the processing liquid is stopped.

[0019] The processing liquid supply unit 30 has an upper nozzle 33 (see FIG. 2) that supplies the processing liquid to the upper surface of the substrate W. The upper nozzle 33, like the lower nozzles 31 and 32, is connected to a processing liquid supply source via piping (not shown). The upper nozzle 33 may be a two-fluid nozzle, and the processing liquid may be atomized by a gas such as N2 gas and sprayed.

[0020] The processing liquid supply unit 30 has a nozzle movement unit 34 that moves the upper nozzle 33 in the horizontal and vertical directions. The nozzle movement unit 34 moves the upper nozzle 33 between a position where the processing liquid is supplied to the substrate W surrounded by the cup 20 (see FIG. 2) and a position where the discharge port of the upper nozzle 33 is accommodated in a nozzle bath 35 (see FIG. 4).

[0021] The nozzle bath 35 is also called a dummy dispense port. Just before supplying the processing liquid to the substrate W from the upper nozzle 33, old processing liquid (e.g., processing liquid whose temperature has dropped) accumulated in the upper nozzle 33 is ejected into the nozzle bath 35, thereby allowing new processing liquid (e.g., processing liquid whose temperature has been controlled to a desired temperature) to be supplied to the substrate W. A discharge pipe is provided on the bottom wall of the nozzle bath 35. The discharge pipe discharges the processing liquid accumulated inside the nozzle bath 35 into the processing tank 40. The discharge pipe is provided vertically. The processing liquid flows down inside the discharge pipe due to gravity. The lower end of the discharge pipe is located above the bottom surface 43 of the processing tank 40.

[0022] The processing tank 40 collects the processing liquid that drops from the cup 20. The processing tank 40 has, for example, a box shape that is open upward. The inner wall surface 41 of the processing tank 40 has side surfaces 42 and a bottom surface 43. The bottom surface 43 has a drain port 44 through which the processing liquid is discharged. A drain pipe 45 is provided in the drain port 44. The drain pipe 45 discharges the processing liquid from the inside of the processing tank 40 to the outside. In addition to the drain pipe 45, an exhaust pipe 46 is provided in the bottom surface 43 of the processing tank 40.

[0023] The exhaust pipe 46 exhausts gas from the inside of the processing tank 40 to the outside. The exhaust pipe 46 protrudes upward from the bottom surface 43 of the processing tank 40. The upper part of the exhaust pipe 46 is covered with an exhaust pipe cover 47. The exhaust pipe cover 47 prevents droplets of the processing liquid from entering the exhaust pipe 46. The exhaust pipe cover 47 is provided below a pair of suction pads 121, 122 that make up the second substrate holding part 12.

[0024] The friction body 50 rubs the lower surface of the substrate W. The friction body 50 is a brush or a sponge. The friction body 50 is, for example, cylindrical, and the upper surface of the friction body 50 is arranged horizontally. The upper surface of the friction body 50 is smaller than the lower surface of the substrate W.

[0025] The friction body 50 is rotated by a rotary motor 51. The rotary motor 51 is provided at one end of an arm 53. A friction body moving unit 55 is provided at the other end of the arm 53. The friction body moving unit 55 moves the friction body 50 in the horizontal and vertical directions via the arm 53.

[0026] 1, the control unit 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs for controlling various processes executed in the substrate processing apparatus 1. The control unit 90 controls the operation of the substrate processing apparatus 1 by causing the CPU 91 to execute the programs stored in the storage medium 92.

[0027] Next, an example of a substrate processing method using the substrate processing apparatus 1 will be described with reference to Fig. 7. As shown in Fig. 7, the substrate processing method includes steps S101 to S106. Steps S101 to S106 are performed under the control of the control unit 90.

[0028] Step S101 involves transporting the substrate W from the outside to the inside of the substrate processing apparatus 1. First, a transport arm (not shown) transports the substrate W above the cup 20 and waits above the cup 20. At this time, as viewed from above, the centers of the substrate W, the first substrate holding unit 11, and the cup 20 are aligned, as shown in FIG. 1. Next, the relay member 14 is raised, and the relay member 14 lifts the substrate W from the transport arm (not shown) (see FIG. 5). Next, when the transport arm leaves the substrate processing apparatus 1, the cup 20 is raised and the relay member 14 is lowered, and the relay member 14 delivers the substrate W to the second substrate holding unit 12 (see FIG. 6). Next, the second substrate holding unit 12 adsorbs the outer periphery of the lower surface of the substrate W.

[0029] Step S102 includes cleaning the center of the underside of the substrate W while the second substrate holding unit 12 is holding the outer periphery of the underside of the substrate W by suction (see FIG. 4). The lower nozzles 31, 32 supply the processing liquid to the underside of the substrate W, and the frictional body moving unit 55 moves the frictional body 50 horizontally while pressing it against the center of the underside of the substrate W. In addition, the cup moving unit 25 moves the second substrate holding unit 12 together with the cup 20 horizontally. The moving direction of the frictional body 50 intersects with the moving direction of the cup 20.

[0030] Step S103 includes transferring the substrate W from the second substrate holding part 12 to the first substrate holding part 11. First, as viewed from above, as shown in Fig. 1, the cup 20 is moved horizontally to a position where the center of the substrate W, the center of the first substrate holding part 11, and the center of the cup 20 are aligned. Thereafter, the cup moving part 25 lowers the cup 20, causing the second substrate holding part 12 to transfer the substrate W to the first substrate holding part 11. The second substrate holding part 12 releases suction from the outer periphery of the lower surface of the substrate W, and the first substrate holding part 11 suctions the center of the lower surface of the substrate W.

[0031] Step S104 includes cleaning the outer periphery of the underside of the substrate W while the first substrate holding unit 11 holds the center of the underside of the substrate W by suction (see FIG. 2). The lower nozzles 31, 32 supply the processing liquid to the underside of the substrate W, and the friction body moving unit 55 moves the friction body 50 horizontally while pressing it against the outer periphery of the underside of the substrate W. In addition, the rotation drive unit 13 rotates the substrate W together with the first substrate holding unit 11.

[0032] The upper surface of the substrate W is cleaned while the rotation drive unit 13 rotates the substrate W together with the first substrate holding unit 11. For example, the upper nozzle 33 supplies the processing liquid to the upper surface of the substrate W. The upper nozzle 33 may supply the processing liquid to the center of the upper surface of the substrate W, or may be moved in the radial direction of the substrate W to supply the processing liquid over the entire radial direction of the substrate W. A second friction body (not shown) may rub the upper surface of the substrate W. Furthermore, a third friction body (not shown) may rub the bevel of the substrate W.

[0033] Step S105 includes drying the substrate W. For example, the rotary drive unit 13 rotates the first substrate holding unit 11 at high speed to shake off the processing liquid adhering to the substrate W.

[0034] Step S106 includes unloading the substrate W from the inside of the substrate processing apparatus 1 to the outside. First, the first substrate holding unit 11 releases the suction of the substrate W, and the relay member 14 is raised, so that the relay member 14 lifts the substrate W from the first substrate holding unit 11. Next, the transport arm enters the inside of the substrate processing apparatus 1 from the outside and waits above the cup 20. Next, the relay member 14 is lowered, so that the relay member 14 hands the substrate W to the transport arm. Thereafter, the transport arm holds the substrate W and exits the substrate processing apparatus 1.

[0035] Conventionally, particles may adhere to the substrate W during processing of the substrate W, and the cleanliness of the substrate W is insufficient.

[0036] The inventors of the present application investigated the cause of the insufficient cleanliness of the substrate W and found that a mist containing particles was being stirred up from below the cup 20 due to the impact caused by the processing liquid falling from the cup 20. They then found that the particles adhering to the substrate W can be reduced by at least one of keeping the area below the cup 20 clean and mitigating the impact caused by the processing liquid being dropped. They also found that, in order to keep the area below the cup 20 clean, it is important to remove the droplets remaining on the bottom surface 43 of the processing bath 40. It is believed that the droplets remaining on the bottom surface 43 may contain particles, and that these droplets are being stirred up as mist.

[0037] The inner wall surface 41 of the treatment tank 40 has side surfaces 42 and a bottom surface 43, and at least a portion of the bottom surface 43 is a hydrophilic surface. In this specification, a hydrophilic surface refers to a surface having a contact angle of water of 60° or less at 20°C. The hydrophilic surface can be obtained, for example, by forming a hydrophilic coating film or by roughening the surface. A typical hydrophilic coating agent can be used. Roughening can be achieved by blasting, plasma treatment, or etching.

[0038] If at least a portion of the bottom surface 43 of the processing tank 40 is a hydrophilic surface, droplets of the processing liquid can easily flow along the bottom surface 43. Therefore, droplets remaining on the bottom surface 43 of the processing tank 40 can be easily removed. This can prevent mist containing particles from floating up from below the cup 20, thereby reducing particles adhering to the substrate W. It is preferable that the entire bottom surface 43 is a hydrophilic surface.

[0039] It is preferable that not only the bottom surface 43 of the processing tank 40 but also the surfaces onto which droplets of the processing liquid adhere are hydrophilic surfaces. For example, it is preferable that at least a portion of the side surface 42 of the processing tank 40 is a hydrophilic surface. It is also preferable that at least a portion of the pair of suction pads 121, 122 constituting the second substrate holding unit 12, the exhaust pipe cover 47, the arm 53 of the friction body 50, the housing of the friction body moving unit 55, or the arm (not shown) that holds the upper nozzle 33 is a hydrophilic surface.

[0040] The bottom surface 43 of the treatment tank 40 has a discharge port 44 for discharging the treatment liquid, and may have inclined surfaces 431, 432 that guide the treatment liquid resting on the bottom surface 43 to the discharge port 44 by gravity. The inclined surfaces 431, 432 are arranged on either side of the discharge port 44 and are inclined in opposite directions. The inclined surfaces 431, 432 can remove droplets remaining on the bottom surface 43 of the treatment tank 40. A horizontal surface may be provided on one side of the discharge port 44.

[0041] The surface of the arm 53 of the friction body 50, on which droplets of the processing liquid adhere, may be tilted by a cylinder, a motor, or the like. Furthermore, the method for removing droplets is not limited to using an inclined surface. For example, droplets may be removed by ejecting gas using an air nozzle or an air knife, or by suctioning droplets using a suction nozzle.

[0042] The substrate processing apparatus 1 may include a buffer member 60. The buffer member 60 is provided below the cup 20 and reduces the impact of the processing liquid dropping from the cup 20 into the processing tank 40. By reducing the impact caused by the dropping of the processing liquid, it is possible to prevent mist from floating up from below the cup 20, and reduce particles adhering to the substrate W.

[0043] The buffer member 60 includes, for example, a porous material such as a sponge, or a mesh. The buffer member 60 may be provided in a ring shape around the entire inner circumference of the cup 20, or may be selectively provided in a location where droplets are likely to bounce back. The buffer member 60 may be moved together with the cup 20 inside the treatment tank 40, or may be fixed inside the treatment tank 40.

[0044] 8, the substrate processing apparatus 1 may include a valve 48. The valve 48 is provided in the drain pipe 45 and opens and closes the drain pipe 45. The control unit 90 may perform control such that the valve 48 is closed to store the processing liquid inside the processing tank 40, and then the valve 48 is opened to discharge the processing liquid from inside the processing tank 40 to the outside. By this control, particles adhering to the bottom surface 43 of the processing tank 40 can be washed away.

[0045] The control of storing the processing liquid inside the processing tank 40 and then discharging the stored processing liquid is performed, for example, after one substrate W is unloaded from inside to outside the substrate processing apparatus 1 and before another substrate W is loaded from outside to inside the substrate processing apparatus 1. In other words, this control is performed in a state where neither the first substrate holding part 11 nor the second substrate holding part 12 is holding a substrate W.

[0046] This control may be performed when cleaning cup 20 using a cleaning substrate (not shown). That is, this control may be performed while first substrate holding unit 11 or second substrate holding unit 12 is holding a cleaning substrate. The cleaning substrate has a shape different from that of substrate W so as to clean a wide area of ​​cup 20.

[0047] The control unit 90 controls the supply of the processing liquid from the upper nozzle 33 to the processing tank 40 via the nozzle bath 35. This control is performed, for example, when the valve 48 is closed to store the processing liquid inside the processing tank 40. The processing liquid can be stored using existing equipment. Note that this control may also be performed with the valve 48 open, or may be performed, for example, when the bottom surface 43 of the processing tank 40 is scrubbed by the first sweep unit 71 or the second sweep unit 73 described below. DIW is used as the processing liquid stored inside the processing tank 40, but a chemical solution such as SC1 may also be used.

[0048] As shown in FIG. 8 , the substrate processing apparatus 1 may include a cleaning nozzle 61. The cleaning nozzle 61 ejects a cleaning liquid toward the inner wall surface 41 of the processing tank 40. The cleaning nozzle 61 ejects the cleaning liquid toward, for example, a corner 49 of the inner wall surface 41. The corner 49 may be a corner between the side surface 42 and the bottom surface 43, a corner between two adjacent side surfaces 42, or a corner of three surfaces consisting of two adjacent side surfaces 42 and the bottom surface 43. The processing liquid remaining in the corner 49 can be cleaned away with the cleaning liquid. The cleaning nozzle 61 may eject the cleaning liquid toward a location other than the corner 49 of the inner wall surface 41, for example, toward a desired region of the bottom surface 43. The cleaning liquid may be the same as the processing liquid, or the cleaning nozzle 61 may be used to store the processing liquid inside the processing tank 40 by closing the valve 48.

[0049] 9, the substrate processing apparatus 1 may include a first sweep unit 71. The first sweep unit 71 is moved horizontally (in the Y-axis direction) together with the cup 20 to sweep away the processing liquid remaining on the bottom surface 43 of the processing tank 40. The first sweep unit 71 can be moved horizontally using existing equipment, i.e., the cup moving unit 25. The first sweep unit 71 is a brush, a sponge, or the like.

[0050] The substrate processing apparatus 1 may include a first lifting / lowering unit 72. The first lifting / lowering unit 72 raises and lowers the first sweeping unit 71 relative to the cup 20. The first lifting / lowering unit 72 can adjust the height of the first sweeping unit 71. For example, when processing the substrate W, the first sweeping unit 71 can be lifted from the bottom surface 43 of the processing tank 40, and when cleaning the processing tank 40, the first sweeping unit 71 can be pressed against the bottom surface 43 of the processing tank 40. The first lifting / lowering unit 72 is configured with a cylinder, a motor, or the like.

[0051] The substrate processing apparatus 1 may include a second sweep unit 73. The second sweep unit 73 is moved horizontally together with the friction body 50 to sweep away the processing liquid remaining on the bottom surface 43 of the processing tank 40. The second sweep unit 73 can be moved horizontally using existing equipment, i.e., the friction body moving unit 55. The second sweep unit 73 is a brush, a sponge, or the like.

[0052] The substrate processing apparatus 1 may include a second lifting / lowering unit 74. The second lifting / lowering unit 74 raises and lowers the second sweeping unit 73 relative to the friction body 50. The second lifting / lowering unit 74 can adjust the height of the second sweeping unit 73. For example, it is possible to lift the second sweeping unit 73 above the bottom surface 43 of the processing tank 40 when processing the substrate W, and to press the second sweeping unit 73 against the bottom surface 43 of the processing tank 40 when cleaning the processing tank 40. The second lifting / lowering unit 74 is configured with a cylinder, a motor, or the like.

[0053] The substrate processing apparatus 1 may include a third sweep unit 75. The third sweep unit 75 is moved horizontally together with the cup 20 to sweep away processing liquid remaining on the upper surface of the exhaust pipe cover 47. The third sweep unit 75 can be moved horizontally using existing equipment, i.e., the cup moving unit 25. The third sweep unit 75 is a brush, a sponge, or the like.

[0054] The substrate processing apparatus 1 may include a third lifting unit 76. The third lifting unit 76 raises and lowers the third sweep unit 75 relative to the cup 20. The third lifting unit 76 can adjust the height of the third sweep unit 75. For example, the third sweep unit 75 can be raised above the upper surface of the exhaust pipe cover 47 when processing the substrate W, and can be pressed against the upper surface of the exhaust pipe cover 47 when cleaning the processing tank 40. The third lifting unit 76 is configured with a cylinder, a motor, or the like.

[0055] The first sweep section 71 or the second sweep section 73 sweeps away the processing liquid remaining on the bottom surface 43 of the processing tank 40 when the valve 48 is opened and the processing liquid is drained from the inside of the processing tank 40, but it may also remove particles adhering to the bottom surface 43 of the processing tank 40 by rubbing the bottom surface 43 of the processing tank 40 when the valve 48 is closed and the processing liquid is stored inside the processing tank 40.

[0056] Similarly, the third sweep section 75 sweeps away the processing liquid remaining on the upper surface of the exhaust pipe cover 47 when the valve 48 is opened and the processing liquid is drained from the inside of the processing tank 40, but it may also remove particles adhering to the upper surface of the exhaust pipe cover 47 by rubbing the upper surface of the exhaust pipe cover 47 when the valve 48 is closed and the processing liquid is stored inside the processing tank 40.

[0057] Next, modified examples of the first substrate holding part 11 and the second substrate holding part 12 will be described with reference to Figs. 10 to 15. The first substrate holding part 11, like the above embodiment, attracts the center of the lower surface of the substrate W (see Fig. 12). The first substrate holding part 11 is formed of, for example, a spin chuck. On the other hand, unlike the above embodiment, the second substrate holding part 12 mechanically holds the outer periphery of the substrate W at multiple locations (see Figs. 14 and 15). The second substrate holding part 12 has, for example, multiple (for example, four) rotating tops 123. Below, differences from the above embodiment will be mainly described.

[0058] The rotating top 123 is composed of a horizontal disk. A wedge-shaped groove is formed on the outer circumferential surface of the disk over the entire circumferential direction. The wedge-shaped groove holds the outer periphery of the substrate W by sandwiching it in the vertical direction. The rotating top 123 is provided on each of a pair of arms 124.

[0059] The pair of arms 124 are disposed with the substrate W sandwiched therebetween and are moved in directions to approach or move away from each other. As a mechanism for moving the pair of arms 124, for example, a motor or an air cylinder is used.

[0060] By bringing the pair of arms 124 closer to each other, the multiple rotating tops 123 vertically sandwich and hold the outer periphery of the substrate W in their respective grooves. In this state, the multiple rotating tops 123 are caused to rotate on their respective axes, thereby rotating the substrate W. Thereafter, by stopping the rotation of the substrate W and moving the pair of arms 124 away from each other, the mechanical holding of the substrate W by the multiple rotating tops 123 is released.

[0061] Next, with reference again to FIGS. 10 to 15, a substrate processing method using first substrate holding part 11 and second substrate holding part 12 according to this modified example (steps S101 to S106 shown in FIG. 7) will be described.

[0062] 11, a plurality of (e.g., three) lift pins 141 receive the substrate W from a transport arm (not shown). The lift pins 141 are inserted into through holes that pass through the first substrate holding part 11 in the vertical direction, and receive the substrate W above the first substrate holding part 11.

[0063] 12, the lift pins 141 are lowered, and the substrate W is transferred from the lift pins 141 to the first substrate holding part 11. At this time, the substrate W only needs to be placed on the first substrate holding part 11, and does not need to be adsorbed to the first substrate holding part 11.

[0064] 13, the pair of arms 124 are moved closer to each other, and the plurality of rotating tops 123 vertically sandwich and hold the outer periphery of the substrate W in their respective grooves. Thereafter, the first substrate holding part 11 is lowered, and the substrate W is transferred from the first substrate holding part 11 to the second substrate holding part 12.

[0065] In step S102, as shown in Figures 14 and 15, while the second substrate holding part 12 mechanically holds the outer periphery of the substrate W at multiple points, the friction body 50 is pressed against the center of the underside of the substrate W to clean the center of the underside of the substrate W.

[0066] In step S102, the plurality of rotating tops 123 are rotated on their respective axes, thereby rotating the substrate W. Also in step S102, the friction body 50 is moved horizontally while rotating on its axis. This allows a wide range to be cleaned.

[0067] Although the second substrate holding part 12 does not move horizontally after receiving the substrate W from the first substrate holding part 11, it may move horizontally as shown in Fig. 16. In the latter case, the first substrate holding part 11 and the lifting pins 141 are not located directly below the center of the lower surface of the substrate W, so that the center of the lower surface of the substrate W can be easily cleaned with the friction body 50.

[0068] In step S103, the substrate W is transferred from the second substrate holding part 12 to the first substrate holding part 11. Specifically, first, as shown in Fig. 13, the first substrate holding part 11 is raised and adsorbs the centre of the lower surface of the substrate W. Next, as shown in Fig. 12, the pair of arms 124 are moved in directions away from each other, and the mechanical holding of the substrate W by the multiple rotating tops 123 is released.

[0069] In step S104, while the first substrate holding unit 11 is holding the center of the underside of the substrate W by suction, the friction body 50 is pressed against the outer periphery of the underside of the substrate W to clean the outer periphery of the underside of the substrate W. At this time, the first substrate holding unit 11 is driven to rotate, thereby rotating the substrate W. In addition, the friction body 50 is moved horizontally while rotating on its axis.

[0070] In step S105, the substrate W is dried. For example, the first substrate holding part 11 is rotated at high speed to shake off the processing liquid adhering to the substrate W. In step S106, the substrate W is carried out.

[0071] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These changes also naturally fall within the technical scope of the present disclosure.

[0072] This application claims priority based on Patent Application No. 2022-063102, filed with the Japan Patent Office on April 5, 2022, and the entire contents of Patent Application No. 2022-063102 are incorporated herein by reference. [Explanation of symbols]

[0073] 1. Substrate processing equipment 11 First board holding part 12 Second board holding part 20 cups 30 Processing liquid supply unit 40 Treatment tank 41 Inner wall surface 42 Side 43 bottom W substrate

Claims

1. a first substrate holding part that holds the substrate horizontally by suction at the center of the lower surface of the substrate; a ring-shaped cup that is open in both the top and bottom directions and surrounds the outer periphery of the substrate held by the first substrate holding part; a processing liquid supply unit that supplies a processing liquid to the substrate surrounded by the cup; a processing tank for collecting the processing liquid dropping from the cup; a second substrate holding portion that holds the substrate horizontally by suction on the outer periphery of the lower surface of the substrate; a cup moving unit that is connected to the second substrate holding unit and that moves the cup in a horizontal direction, the cup surrounding the outer periphery of the substrate held by the second substrate holding unit; a first sweep unit that is moved horizontally together with the cup and sweeps away the processing liquid remaining on the bottom surface of the processing tank; A substrate processing apparatus comprising:

2. A substrate processing apparatus as described in claim 1, wherein the inner wall surface of the processing tank has a side surface and a bottom surface, and at least a portion of the bottom surface is a hydrophilic surface.

3. The substrate processing apparatus according to claim 1 , further comprising a buffer member below the cup for buffering an impact of the processing liquid dropping from the cup into the processing bath.

4. a drain pipe for discharging the treatment liquid from the inside of the treatment tank to the outside, a valve provided in the drain pipe, and a control unit for controlling the valve; The substrate processing apparatus according to claim 1 , wherein the control unit performs control to close the valve to store the processing liquid inside the processing tank, and then open the valve to discharge the processing liquid from inside the processing tank to outside.

5. the processing liquid supply unit includes a nozzle that discharges the processing liquid, and a nozzle movement unit that moves the nozzle in horizontal and vertical directions; the nozzle moving unit moves the nozzle between a position where the processing liquid is supplied to the substrate surrounded by the cup and a position where an outlet of the nozzle is accommodated in a nozzle bath; The substrate processing apparatus according to claim 1 , further comprising a control unit that controls supply of the processing liquid from the nozzle to the processing bath through the nozzle bath.

6. The substrate processing apparatus according to claim 1 , further comprising a cleaning nozzle that discharges a cleaning liquid onto an inner wall surface of the processing tank.

7. a first substrate holding part that holds the substrate horizontally by suction at the center of the lower surface of the substrate; a ring-shaped cup that is open in both the top and bottom directions and surrounds the outer periphery of the substrate held by the first substrate holding part; a processing liquid supply unit that supplies a processing liquid to the substrate surrounded by the cup; a processing tank for collecting the processing liquid dropping from the cup; a friction body that rubs the lower surface of the substrate inside the cup; a friction body moving unit that moves the friction body in horizontal and vertical directions; a second sweep unit that is moved horizontally together with the friction body and sweeps away the processing liquid remaining on the bottom surface of the processing tank; A substrate processing apparatus comprising:

8. The substrate processing apparatus according to claim 7 , further comprising a buffer member below the cup for buffering an impact of the processing liquid dropping from the cup into the processing bath.

9. a first substrate holding part that holds the substrate horizontally by suction at the center of the lower surface of the substrate; a ring-shaped cup that is open in both the top and bottom directions and surrounds the outer periphery of the substrate held by the first substrate holding part; a processing liquid supply unit that supplies a processing liquid to the substrate surrounded by the cup; a processing tank for collecting the processing liquid dropping from the cup; a second substrate holding portion that holds the substrate horizontally by suction on the outer periphery of the lower surface of the substrate; a cup moving unit that is connected to the second substrate holding unit and that moves the cup in a horizontal direction, the cup surrounding the outer periphery of the substrate held by the second substrate holding unit; an exhaust pipe provided on the bottom surface of the treatment tank; and an exhaust pipe cover covering an upper part of the exhaust pipe. a third sweep unit that is moved horizontally together with the cup and sweeps away the processing liquid remaining on the upper surface of the exhaust pipe cover; A substrate processing apparatus comprising:

10. The substrate processing apparatus according to claim 9 , further comprising a buffer member below the cup for buffering an impact of the processing liquid dropping from the cup into the processing bath.

11. holding the substrate horizontally with a first substrate holding part that sucks the center of the lower surface of the substrate; surrounding an outer periphery of the substrate held by the first substrate holding part with a ring-shaped cup that is open both upward and downward; supplying a processing liquid to the substrate surrounded by the cup; collecting the processing liquid dropping from the cup in a processing tank; holding the substrate horizontally with a second substrate holding part that adsorbs the outer periphery of the lower surface of the substrate; Surrounding an outer periphery of the substrate held by the second substrate holding part with the cup; moving the cup connected to the second substrate holder in a horizontal direction; sweeping away the processing solution remaining on the bottom surface of the processing tank with a first sweep unit that is moved horizontally together with the cup; A substrate processing method comprising:

12. A substrate processing method as described in claim 11, wherein the inner wall surface of the processing tank has a side surface and a bottom surface, and at least a portion of the bottom surface of the processing tank is a hydrophilic surface.

13. 12. The substrate processing method according to claim 11, further comprising: cushioning the impact of the processing liquid dropping from the cup into the processing bath by a buffer member provided below the cup.

14. 12. The substrate processing method according to claim 11, further comprising: closing a valve provided midway in a drain pipe that discharges the processing liquid from the inside of the processing tank to the outside to store the processing liquid inside the processing tank; and then opening the valve to discharge the processing liquid from the inside of the processing tank to the outside.

15. a nozzle for discharging the processing liquid being moved between a position where the processing liquid is supplied to the substrate surrounded by the cup and a position where a discharge port of the nozzle is accommodated in a nozzle bath; The substrate processing method according to claim 11 , further comprising supplying the processing liquid from the nozzle to the processing bath via the nozzle bath.

16. The substrate processing method according to claim 11 , further comprising discharging a cleaning liquid toward an inner wall surface of the processing tank.

17. holding the substrate horizontally with a first substrate holding part that sucks the center of the lower surface of the substrate; surrounding an outer periphery of the substrate held by the first substrate holding part with a ring-shaped cup that is open both upward and downward; supplying a processing liquid to the substrate surrounded by the cup; collecting the processing liquid dropping from the cup in a processing tank; rubbing the lower surface of the substrate with a friction body inside the cup; moving the friction body in horizontal and vertical directions; sweeping away the processing liquid remaining on the bottom surface of the processing tank with a second sweep unit that is moved horizontally together with the friction body; A substrate processing method comprising:

18. 18. The substrate processing method according to claim 17, further comprising: cushioning the impact of the processing liquid dropping from the cup into the processing bath by a buffer member provided below the cup.

19. holding the substrate horizontally with a first substrate holding part that sucks the center of the lower surface of the substrate; surrounding an outer periphery of the substrate held by the first substrate holding part with a ring-shaped cup that is open both upward and downward; supplying a processing liquid to the substrate surrounded by the cup; collecting the processing liquid dropping from the cup in a processing tank; holding the substrate horizontally with a second substrate holding part that adsorbs the outer periphery of the lower surface of the substrate; Surrounding an outer periphery of the substrate held by the second substrate holding part with the cup; moving the cup connected to the second substrate holder in a horizontal direction; sweeping away the processing liquid remaining on an upper surface of an exhaust pipe cover that covers an upper portion of an exhaust pipe provided on the bottom surface of the processing tank with a third sweep unit that is moved horizontally together with the cup; A substrate processing method comprising:

20. 20. The substrate processing method according to claim 19, further comprising: cushioning the impact of the processing liquid dropping from the cup into the processing bath by a buffer member provided below the cup.

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