Double-sided display pixel package structure and manufacturing method thereof

Abstract

To provide a double-sided display pixel package structure and a manufacturing method thereof, which has a simple structure and can reduce thickness, weight, and cost. [Solution] The present invention relates to a double-sided display pixel package structure and a manufacturing method thereof. The structure includes a transparent substrate having conductive vias, a plurality of conductive bumps disposed on the respective conductive vias, a dummy diode structure and a plurality of light-emitting diode structures disposed on the respective conductive bumps, a first protective layer, a conductive layer, a second protective layer, and a half-mirror film. The first protective layer is disposed on the transparent substrate and surrounds the conductive bumps, the dummy diode structure, and the light-emitting diode structure. The conductive layer and the second protective layer are disposed, in order, on the first protective layer, the dummy diode structure, and the light-emitting diode structure. The half-mirror film is disposed on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls of the second protective layer and on the top of a portion of the second protective layer.

Description

[Technical Field]

[0001] The present invention relates to packaging technology, and in particular to a double-sided display pixel packaging structure and its manufacturing method. [Background technology]

[0002] Light-emitting diodes (LEDs) are made of semiconductor materials and can emit light in different colors, such as red, green, yellow, and blue. When an LED is in operation, it emits light by applying a forward bias to the pn junction of the semiconductor material. LEDs have the advantages of low power, high brightness, low voltage, ease of integration with integrated circuits, ease of operation, and long lifespan, making them widely used in lighting devices and various industries. Summary of the Invention [Problem to be solved by the invention]

[0003] Conventional LED packaging methods involve connecting the LED electrodes to a package substrate via wire bonding. Because the top electrodes of the LEDs are electrically connected to the package substrate via bonding wires, multiple LEDs must be wire-bonded individually. This poses problems in production speed and yield rate when packaging multiple chips. Furthermore, wire bonding makes it difficult to achieve miniaturization, has high impedance, and fails to meet requirements for lightness, thinness, compactness, and high brightness. As electronic product shapes become more diverse, dual-sided display functionality has become a feature of new-generation electronic products. However, assembling a dual-sided display requires packaging two independent single-sided displays and then assembling them back-to-back, resulting in an increase in the overall thickness, weight, and cost of the dual-sided display.

[0004] To solve the above problems, the present invention provides a double-sided display pixel package structure and a manufacturing method thereof. [Means for solving the problem]

[0005] The present invention provides a double-sided display pixel package structure and manufacturing method thereof, which has a simple structure and can reduce thickness, weight and cost.

[0006] In one embodiment of the present invention, a double-sided display pixel package structure includes a transparent substrate, a plurality of conductive bumps, dummy diode structures, a plurality of light-emitting diode structures, a first protective layer, a conductive layer, a second protective layer, and a half mirror film. The transparent substrate has a plurality of conductive vias extending therethrough. The conductive bumps are disposed on the conductive vias, respectively. The dummy diode structures and the light-emitting diode structures are disposed on the conductive bumps, respectively. The first protective layer is disposed on the transparent substrate and surrounds the conductive bumps, the dummy diode structures, and the light-emitting diode structures. The conductive layer is disposed on the first protective layer, the dummy diode structures, and the light-emitting diode structures, and electrically connects the dummy diode structures and the light-emitting diode structures. The second protective layer is disposed on the conductive layer. The half mirror film is disposed on the transparent substrate, the first protective layer, the conductive layer, and sidewalls of the second protective layer and on top of a portion of the second protective layer, exposing the second protective layer directly above the light-emitting diode structures.

[0007] In one embodiment of the present invention, each light-emitting diode structure includes a metal composite substrate, a first epitaxial layer, a second epitaxial layer, and an electrode layer. The metal composite substrate includes a first Invar layer, a first copper layer, and a second copper layer. The first copper layer and the second copper layer are located on the upper and lower surfaces of the first Invar layer, respectively. The second copper layer is located between the first Invar layer and the conductive bump. The thickness ratio of the first copper layer, the first Invar layer, and the second copper layer of the metal composite substrate is 1:2.5 to 3.5:1. The first epitaxial layer has a first conductivity type and is disposed on the first copper layer. The second epitaxial layer has a second conductivity type opposite to the first conductivity type and is disposed on the first epitaxial layer. The electrode layer is disposed on the second epitaxial layer. The first protective layer surrounds the metal composite substrate, the first epitaxial layer, the second epitaxial layer, and the electrode layer, and the conductive layer is provided on the electrode layer.

[0008] In one embodiment of the present invention, the dummy diode structure includes a second Invar layer, a first gold layer, and a second gold layer. The first gold layer and the second gold layer are located on the upper and lower surfaces of the second Invar layer, respectively. The second gold layer is located between the second Invar layer and the conductive bump. The thickness ratio of the first gold layer, the second Invar layer, and the second gold layer is 1.1:2.5 to 3.5:1.1.

[0009] In one embodiment of the present invention, the height of each light emitting diode structure and the dummy diode structure is the same.

[0010] In one embodiment of the present invention, the first conductivity type is P-type, and the second conductivity type is N-type.

[0011] In one embodiment of the present invention, the first conductivity type is N-type, and the second conductivity type is P-type.

[0012] In one embodiment of the present invention, the light emitting diode structure includes a green light emitting diode structure, a blue light emitting diode structure, and a red light emitting diode structure.

[0013] In one embodiment of the present invention, the transparent substrate is a glass substrate.

[0014] In one embodiment of the present invention, the conductive vias are made of copper, and the conductive bumps are made of solder.

[0015] In one embodiment of the present invention, the first protective layer and the second protective layer are insulating transparent colloids.

[0016] In one embodiment of the present invention, the thickness of the half mirror film is 20 to 70 nm.

[0017] In one embodiment of the present invention, a method for manufacturing a double-sided display pixel package structure includes: providing a transparent substrate having a plurality of conductive vias therethrough; Each of the plurality of conductive via groups has a plurality of conductive vias passing therethrough, forming a plurality of conductive bumps on the plurality of conductive vias in each conductive via group; forming a dummy diode structure and a plurality of light emitting diode structures on the plurality of conductive bumps, respectively; forming a first protective layer on a transparent substrate to surround and cover the plurality of conductive bumps, the dummy diode structure, and the plurality of light emitting diode structures; removing the first protective layer located on top of the dummy diode structure and the plurality of light emitting diode structures; forming a conductive layer on the first protective layer, the dummy diode structure, and the plurality of light emitting diode structures for electrically connecting the dummy diode structure and the plurality of light emitting diode structures; forming a second protective layer on the conductive layer; cutting the transparent substrate, the first protective layer, the conductive layer, and the second protective layer to form a plurality of diode package structures; Wherein, each diode package structure includes a set of the plurality of conductive via groups and a corresponding transparent substrate, a plurality of conductive bumps, a dummy diode structure, a plurality of light emitting diode structures, a first protective layer, a conductive layer, and a second protective layer; Mounting a plurality of diode package structures on a transient substrate via a removable double-sided adhesive layer; forming a half mirror film on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls of the second protective layer and on the top of a portion of the second protective layer of each diode package structure, so as to expose the second protective layer directly above the plurality of light emitting diode structures; removing the removable double-sided adhesive layer and the temporary substrate from the plurality of diode package structures and the half mirror film to obtain a plurality of double-sided display pixel package structures; It has.

[0018] forming a half-mirror film on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls of the second protective layer and on the top of a portion of the second protective layer of each diode package structure, and exposing the second protective layer directly above the plurality of light-emitting diode structures; placing a plurality of retainer blocks on the second protective layer directly above the plurality of light emitting diode structures, respectively; forming a half mirror film on the sidewalls of the plurality of holding blocks, the transparent substrate of each diode package structure, the first protective layer, the conductive layer, and the second protective layer and on a top of a portion of the second protective layer; removing the plurality of pressing blocks and the half mirror film thereon; It has.

[0019] In one embodiment of the present invention, the transparent substrate of each diode package structure is square, and the multiple diode package structures on the temporary substrate are arranged at equal intervals, with the distance between two adjacent diode package structures being 1.2 times the width of the square.

[0020] In one embodiment of the present invention, the removable double-sided adhesive layer is an ultraviolet decomposable adhesive layer.

[0021] In the step of covering the plurality of light-emitting diode structures with the first protective layer, the difference in height between the first protective layer and the light-emitting diode structures is 4 to 8 μm.

[0022] forming a dummy diode structure and a plurality of light-emitting diode structures on the plurality of conductive bumps, A laser with an output of 1 to 5 W is irradiated onto the plurality of conductive bumps for 15 to 60 ms, thereby forming a dummy diode structure and a plurality of light-emitting diode structures on each of the plurality of conductive bumps. [Effects of the Invention]

[0023] According to the double-sided display pixel package structure and manufacturing method thereof of the present invention, the dummy diode structures and all the light-emitting diode structures of the same diode package structure are electrically connected via a conductive layer, and a half-mirror film is formed on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls and part of the top of the second protective layer of each diode package structure, thereby simplifying the structure and reducing the thickness, weight, and cost. [Brief explanation of the drawings]

[0024] [Figure 1] 1 is a structural cross-sectional view of a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 2] FIG. 10 is a structural cross-sectional view of a double-sided display pixel package structure according to another embodiment of the present invention; [Figure 3a] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3b] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3c] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3d] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3e] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3f] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3g] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3h] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3i] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3j] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3k] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3l] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 3m] 1A-1C are structural perspective views of steps for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4a] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4b] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4c] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4d] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4e] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4f] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4g] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4h] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4i] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4j] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4k] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4l] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; [Figure 4m] 1A to 1C are cross-sectional views of the structure of each step for manufacturing a double-sided display pixel package structure according to an embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0025] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings and the specification, the same reference numerals indicate the same or similar components. In the drawings, shapes and thicknesses may be exaggerated for simplification or convenience of illustration. It should be noted that elements not shown in the drawings or described in the specification are obvious to those skilled in the art. Those skilled in the art will be able to make various modifications and improvements based on the contents of the present invention.

[0026] When an element is described as being "on" another element, this generally refers to the element being directly on the other element, and other elements may be present between the two elements. In contrast, when an element is described as being "directly on" another element, other elements may not be present between the two elements. As used herein, "and / or" includes any combination of one or more of the associated listed items. In this specification, the phrases "one embodiment" or "embodiment" refer to a particular element, structure, or feature related to at least one embodiment. Therefore, the phrases "one embodiment" or "embodiment" used in this specification do not necessarily refer to the same embodiment. However, particular elements, structures, and features described in multiple embodiments can be combined as appropriate. The following content is merely illustrative, and those skilled in the art will understand that various modifications are possible and that such modifications are within the scope of the present invention. The scope of the present invention is defined by the appended claims. In the specification and claims, unless otherwise specified, the terms "a" and "the" refer to "one or at least one" element or component. Furthermore, singular articles include plural elements or components unless a plural form is clearly understood from the surrounding text. Furthermore, the term "in" also includes "in" and "on" unless otherwise specified. Terms used in the specification and claims have the same meaning as understood by those skilled in the art unless otherwise specified. Furthermore, some specific terms will be clearly defined and explained below. The terms used in the specification are merely illustrative and do not limit the scope of the present invention. The present invention is not limited to the following examples. As used herein, terms such as "comprising," "including," "involving," "having," and "containing" are intended to be open-ended, i.e., not limited to the recited items. Furthermore, it is not necessary for any embodiment or claim of the present invention to achieve all of the disclosed objects, advantages, or features. Furthermore, the abstract and title are intended to be used for searching patent documents, but are not intended to limit the scope of the claims of the present invention. Furthermore, the term "(electrical) connection" refers to both direct and indirect (electrical) connection means. For example, connecting a first device to a second device means that the first device is directly connected to the second device, or indirectly connected to the second device via another device or other connection means. Although electrical signals may be attenuated or otherwise altered during transmission, unless otherwise specified, the signal at the transmitting or providing end and the signal at the receiving end should be considered the same signal. For example, when electrical signal S is transmitted from terminal A of an electronic circuit to terminal B of the electronic circuit, a voltage drop occurs as it passes through the source and drain electrodes of a transistor switch and / or parasitic capacitance. However, unless intentionally using attenuation or other alterations during transmission to achieve a specific technical effect, electrical signal S at terminal A of the electronic circuit and electrical signal S at terminal B should be considered the same signal. Unless otherwise specified, conditional statements or words such as "can" or "may" are often intended to express features, components, or steps that are present in this embodiment but may also be interpreted as not being required. In other embodiments, these features, components, or steps may not be required. The term "embodiment" described below refers to a particular element, structure, or feature that is described in at least one embodiment, but is not limited to one embodiment, and particular elements, structures, and features described in multiple embodiments can be combined as appropriate.

[0027] The double-sided display pixel package structure and its manufacturing method of the present invention electrically connects the dummy diode structures and all the light-emitting diode structures of the same diode package structure via a conductive layer, and forms a half-mirror film on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls and part of the top of the second protective layer of each diode package structure, thereby simplifying the structure and reducing the thickness, weight, and cost.

[0028] FIG. 1 is a structural cross-sectional view of a double-sided display pixel package structure according to an embodiment of the present invention. FIG. 2 is a structural cross-sectional view of a double-sided display pixel package structure according to another embodiment of the present invention. A double-sided display pixel package structure 1 will be described with reference to FIGS. 1 and 2. The double-sided display pixel package structure 1 includes a transparent substrate 10, a plurality of conductive bumps 11, dummy diode structures 12, a plurality of light-emitting diode structures 13, a first protective layer 14, a conductive layer 15, a second protective layer 16, and a half mirror film 17. The first protective layer 14, the conductive layer 15, and the second protective layer 16 are light-transmitting. The transparent substrate 10 may be, for example, a glass substrate. The transparent substrate 10 has a plurality of conductive vias 100 penetrating therethrough. The conductive vias 100 may be made of, for example, copper. The conductive bumps 11 may be made of, for example, solder. The light-emitting diode structures 13 include a green light-emitting diode structure, a blue light-emitting diode structure, and a red light-emitting diode structure. The conductive layer 15 may be, for example, an indium tin oxide layer. The first protective layer 14 and the second protective layer 16 are, for example, an insulating transparent colloid. The thickness of the half-mirror film is, for example, 20 to 70 nm. The dummy diode structure 12 and the light-emitting diode structure 13 are each provided on the conductive via 100. The first protective layer 14 is provided on the transparent substrate 10 and surrounds the conductive bump 11, the dummy diode structure 12, and the light-emitting diode structure 13. The conductive layer 15 is provided on the first protective layer 14, the dummy diode structure 12, and the light-emitting diode structure 13 and electrically connects the dummy diode structure 12 and the light-emitting diode structure 13. The second protective layer 16 is provided on the conductive layer 15. The half-mirror film 17 is provided on the transparent substrate 10, the first protective layer 14, the conductive layer 15, and the sidewalls of the second protective layer 16 and on the top of a portion of the second protective layer 16, exposing the second protective layer 16 directly above the light-emitting diode structure 13. The half mirror film 17 reflects a part of the light emitted upward from the light emitting diode structure 13 downward from the light emitting diode structure 13 while transmitting a part of the light.

[0029] In some embodiments of the present invention, each light-emitting diode structure 13 includes a metal composite substrate S, a first epitaxial layer 131, a second epitaxial layer 132, and an electrode layer 133. The metal composite substrate S includes a first Invar layer 134, a first copper layer 135, and a second copper layer 136. The first Invar layer 134 is a nickel-iron alloy layer. The first copper layer 135 and the second copper layer 136 are located on the upper and lower surfaces of the first Invar layer 134, respectively. The second copper layer 136 is located between the first Invar layer 134 and the conductive bump 11. The thickness ratio of the first copper layer 135, the first Invar layer 134, and the second copper layer 136 of the metal composite substrate S is 1:2.5 to 3.5:1. The first epitaxial layer 131 has a first conductivity type and is disposed on the first copper layer 135. The second epitaxial layer 132 has a second conductivity type opposite to the first conductivity type and is provided on the first epitaxial layer 131. When the first conductivity type is P type, the second conductivity type is N type. When the first conductivity type is N type, the second conductivity type is P type. An electrode layer 133 is provided on the second epitaxial layer 132. A first protective layer 14 surrounds the metal composite substrate S, the first epitaxial layer 131, the second epitaxial layer 132, and the electrode layer 133, and a conductive layer 15 is provided on the electrode layer 133.

[0030] In some embodiments of the present invention, the dummy diode structure 12 includes a second Invar layer 122, a first gold layer 123, and a second gold layer 124. The second Invar layer 122 is a nickel-iron alloy layer. The first gold layer 123 and the second gold layer 124 are located on the upper and lower surfaces of the second Invar layer 122, respectively. The second gold layer 124 is located between the second Invar layer 122 and the conductive bump 11. The thickness ratio of the first gold layer 123, the second Invar layer 122, and the second gold layer 124 is 1.1:2.5 to 3.5:1.1. The first protective layer 14 surrounds the second Invar layer 122, the first gold layer 123, and the second gold layer 124. The conductive layer 15 is disposed on the first gold layer 123. In a preferred embodiment, the heights of the light-emitting diode structures 13 and the dummy diode structures 12 are the same, and the top surface of the conductive layer 15 is flat. Each light-emitting diode structure 13 is coupled to an external voltage through the conductive via 100 underneath it, and is electrically connected to the dummy diode structure 12 through the electrode layer 133 and the conductive layer 15, and is therefore coupled to an external voltage through the conductive via 100 underneath the dummy diode structure 12.

[0031] FIGS. 3a to 3m are structural overhead views of steps for fabricating a double-sided display pixel package structure according to an embodiment of the present invention. FIGS. 4a to 4m are structural cross-sectional views of steps for fabricating a double-sided display pixel package structure according to an embodiment of the present invention. FIGS. 3a to 3m correspond to FIGS. 4a to 4m, respectively. A method for fabricating a double-sided display pixel package structure will be described with reference to FIGS. 3a to 3m and 4a to 4m. First, as shown in FIGS. 3a and 4a, a transparent substrate 10 having a plurality of conductive via groups H extending therethrough is provided. Each conductive via group H has a plurality of conductive vias 100. As shown in FIGS. 3b and 4b, a plurality of conductive bumps 11 are formed on all the conductive vias 100 in each conductive via group H. The conductive bumps 11 can be formed by a printing method. As shown in FIGS. 3c and 4c, a dummy diode structure 12 and a plurality of light-emitting diode structures 13 are formed on the conductive bumps 11, respectively. For example, a laser with an output of 1 to 5 W is irradiated onto the conductive bump 11 for 15 to 60 ms to form a dummy diode structure 12 and an LED structure 13 on the conductive bump 11, respectively. As shown in FIGS. 3d and 4d, a first protective layer 14 is formed on the transparent substrate 10 by glue dispensing or spin coating to surround and cover the conductive bump 11, the dummy diode structure 12, and the LED structure 13. The difference in height between the first protective layer 14 and the LED structure 13 is, for example, 4 to 8 μm. As shown in FIGS. 3e and 4e, the first protective layer 14 located on the top of the dummy diode structure 12 and the LED structure 13 is removed by a laser or photolithography process. As shown in FIGS. 3f and 4f, a conductive layer 15 for electrically connecting the dummy diode structure 12 and the LED structure 13 is formed on the first protective layer 14, the dummy diode structure 12, and the LED structure 13. The conductive layer 15 can be formed by sputtering. As shown in Figures 3g and 4g, a second protective layer 16 is formed on the conductive layer 15 by glue dispensing or spin coating.As shown in Figures 4g, 3h, and 4h, the transparent substrate 10, the first protective layer 14, the conductive layer 15, and the second protective layer 16 are cut with a wheel to form a plurality of diode package structures 18. As shown in Figures 3a, 3c, 4g, and 4h, each diode package structure 18 includes a transparent substrate 10, a conductive bump 11, a dummy diode structure 12, a light-emitting diode structure 13, a first protective layer 14, a conductive layer 15, and a second protective layer 16 corresponding to one of the conductive via groups H. As shown in Figures 3i and 4i, the diode package structure 18 is mounted on a temporary substrate 20 via a removable double-sided adhesive layer 19. The removable double-sided adhesive layer 19 can be, for example, a UV-decomposable adhesive layer. To form a semi-transparent / semi-reflective film on the sidewalls of the diode package structures 18, the transparent substrate 10 of each diode package structure 18 is square, the diode package structures 18 are arranged on the temporary substrate 20 at equal intervals, and the distance D between two adjacent diode package structures 18 is 1.2 times the width of the square. As shown in FIGS. 3j and 4j, a hollow mask M having a plurality of pressing blocks 21 is placed on the second protective layer 16, and the pressing blocks 21 are placed on the second protective layer 16 directly above the light-emitting diode structures 13, exposing the transparent substrate 10, first protective layer 14, conductive layer 15, and second protective layer 16 of each diode package structure 18. As shown in FIGS. 3k and 4k, a vapor deposition method is used to form a half-mirror film 17 on the pressing blocks 21, the transparent substrate 10, first protective layer 14, conductive layer 15 of each diode package structure 18, the sidewalls of the second protective layer 16, and a portion of the top of the second protective layer 16. This simplifies the structure and reduces thickness, weight, and cost. As shown in Figures 4k, 3l, and 4l, the pressing block 21 and the half mirror film 17 thereon are removed. As shown in Figures 4l, 3m, and 4m, the removable double-sided adhesive layer 19 is irradiated with ultraviolet light to remove the removable double-sided adhesive layer 19 and the temporary substrate 20 from the diode package structure 18 and the half mirror film 17, thereby obtaining multiple double-sided display pixel package structures 1. For ease of understanding, Figures 3m and 4m take one double-sided display pixel package structure 1 as an example.The steps of Figures 4j, 4k, and 4l can be combined into one step. That is, the step of Figure 4l can be performed directly after the step of Figure 4i. The step of Figure 4l forms a half-mirror film 17 on the transparent substrate 10, the first protective layer 14, the conductive layer 15, and the sidewalls and part of the top of the second protective layer 16 of each diode package structure 18, thereby exposing the second protective layer 16 directly above the light-emitting diode structure 13. If substantially the same results can be achieved, it is not necessary to perform the steps in the order of Figures 4a to 4m.

[0032] According to the above embodiment, the double-sided display pixel package structure and its manufacturing method electrically connects the dummy diode structures and all the light-emitting diode structures of the same diode package structure via the conductive layer, and forms a half-mirror film on the transparent substrate, the first protective layer, the conductive layer, and the sidewalls and part of the top of the second protective layer of each diode package structure, thereby simplifying the structure and reducing the thickness, weight, and cost.

[0033] The present invention is not limited to the above examples, and all equivalent modifications made within the scope of the claims of the present invention are included in the present invention. [Explanation of symbols]

[0034] 1. Double-sided display pixel package structure 10 Transparent substrate 100 conductive vias 11 Conductive bumps 12 Dummy diode structure 122 Second Invar Layer 123 First gold layer 124 Second gold layer 13 Light-emitting diode structure 131 First epitaxial layer 132 Second epitaxial layer 133 Electrode layer 134 First Invar Layer 135 First copper layer 136 Second copper layer 14 1st protective layer 15 Conductive layer 16 Second protective layer 17 Half mirror film 18 Diode package structure 19 Removable double-sided adhesive layers 20 Temporary board 21 Presser block S Metal composite substrate H Conductive via group D distance

Claims

1. The light-emitting diode display device includes a transparent substrate, a plurality of conductive bumps, a dummy diode structure, a plurality of light-emitting diode structures, a first protective layer, a conductive layer, a second protective layer, and a half mirror film; the transparent substrate having a plurality of conductive vias therethrough; the plurality of conductive bumps are provided on the plurality of conductive vias, respectively; the dummy diode structure and the plurality of light emitting diode structures are respectively provided on the plurality of conductive bumps; the first protective layer is disposed on the transparent substrate and surrounds the conductive bumps, the dummy diode structure, and the light-emitting diode structure; the conductive layer is disposed on the first protective layer, the dummy diode structure, and the plurality of light-emitting diode structures, and electrically connects the dummy diode structure and the plurality of light-emitting diode structures; the second protective layer is provided on the conductive layer, the half-mirror film is provided on the transparent substrate, the first protective layer, the conductive layer, and sidewalls of the second protective layer and on a top of a portion of the second protective layer, exposing the second protective layer directly above the plurality of light-emitting diode structures, and the half-mirror film reflects a portion of light emitted upward by the plurality of light-emitting diode structures downward while transmitting another portion of the light upward; Double-sided display pixel package structure.

2. Each of the light-emitting diode structures includes a metal composite substrate, a first epitaxial layer, a second epitaxial layer, and an electrode layer; The metal composite substrate has a first Invar layer, a first copper layer, and a second copper layer; the first copper layer and the second copper layer are located on the upper and lower surfaces of the first Invar layer, respectively; the second copper layer is located between the first Invar layer and the conductive bump; a thickness ratio of the first copper layer, the first Invar layer, and the second copper layer of the metal composite substrate is 1:2.5 to 3.5:1; the first epitaxial layer has a first conductivity type and is disposed on the first copper layer; the second epitaxial layer has a second conductivity type opposite to the first conductivity type and is provided on the first epitaxial layer; the electrode layer is provided on the second epitaxial layer; the first protective layer surrounds the metal composite substrate, the first epitaxial layer, the second epitaxial layer, and the electrode layer; The conductive layer is provided on the electrode layer. The double-sided display pixel package structure according to claim 1 .

3. the dummy diode structure includes a second Invar layer, a first gold layer, and a second gold layer; the first gold layer and the second gold layer are respectively located on the upper and lower surfaces of the second Invar layer; the second gold layer is located between the second Invar layer and the conductive bump; a thickness ratio of the first gold layer, the second Invar layer, and the second gold layer is 1.1:2.5 to 3.5:1.1; The double-sided display pixel package structure according to claim 2 .

4. The height of each of the light-emitting diode structures and the dummy diode structure is the same. The double-sided display pixel package structure according to claim 3 .

5. the first conductivity type is P type, The second conductivity type is N-type. The double-sided display pixel package structure according to claim 2 .

6. the first conductivity type is N-type, The second conductivity type is P type. The double-sided display pixel package structure according to claim 2 .

7. the plurality of light emitting diode structures include a green light emitting diode structure, a blue light emitting diode structure, and a red light emitting diode structure; The double-sided display pixel package structure according to claim 1 .

8. The transparent substrate is a glass substrate. The double-sided display pixel package structure according to claim 1 .

9. the plurality of conductive vias are made of copper; the conductive bumps are made of solder; The double-sided display pixel package structure according to claim 1 .

10. the first protective layer and the second protective layer are made of an insulating transparent colloid; The double-sided display pixel package structure according to claim 1 .

11. The thickness of the half mirror film is 20 to 70 nm. The double-sided display pixel package structure according to claim 1 .

12. providing a transparent substrate having a plurality of conductive vias therethrough; Each of the plurality of conductive via groups has a plurality of conductive vias passing therethrough, forming a plurality of conductive bumps on the plurality of conductive vias in each of the conductive via groups; forming a dummy diode structure and a plurality of light emitting diode structures on the plurality of conductive bumps, respectively; forming a first protective layer on the transparent substrate to surround and cover the conductive bumps, the dummy diode structure, and the light-emitting diode structures; removing the first protective layer located on top of the dummy diode structure and the plurality of light emitting diode structures; forming a conductive layer on the first protective layer, the dummy diode structure, and the plurality of light emitting diode structures to electrically connect the dummy diode structure and the plurality of light emitting diode structures; forming a second protective layer on the conductive layer; cutting the transparent substrate, the first protective layer, the conductive layer, and the second protective layer to form a plurality of diode package structures; Wherein, each of the diode package structures includes a set of the plurality of conductive via groups and the corresponding transparent substrate, the plurality of conductive bumps, the dummy diode structure, the plurality of light emitting diode structures, the first protective layer, the conductive layer, and the second protective layer; Mounting the plurality of diode package structures on a transient substrate via a removable double-sided adhesive layer; forming a half mirror film on the transparent substrate, the first protective layer, the conductive layer, and a sidewall of the second protective layer and a top of a part of the second protective layer of each of the diode package structures, exposing the second protective layer directly above the plurality of light emitting diode structures, so that the half mirror film can reflect a part of light emitted upward by the plurality of light emitting diode structures downward and transmit another part of the light upward; removing the removable double-sided adhesive layer and the temporary substrate from the plurality of diode package structures and the half mirror film to obtain a plurality of double-sided display pixel package structures; having A method for manufacturing a double-sided display pixel package structure.

13. forming the half mirror film on the transparent substrate, the first protective layer, the conductive layer, the sidewall of the second protective layer and the top of the part of the second protective layer of each of the diode package structures, and exposing the second protective layer directly above the plurality of light-emitting diode structures, placing a plurality of retainer blocks on the second protective layer directly above the plurality of light emitting diode structures, respectively; forming the half mirror film on the plurality of pressing blocks, the transparent substrate of each of the diode package structures, the first protective layer, the conductive layer, the sidewall of the second protective layer, and the top of the portion of the second protective layer; removing the plurality of pressing blocks and the half mirror film thereon; having The method for manufacturing the double-sided display pixel package structure according to claim 12 .

14. the transparent substrate of each of the diode package structures is square; The plurality of diode package structures on the temporary substrate are arranged at equal intervals; The distance between two adjacent diode package structures is 1.2 times the width of the square. The method for manufacturing the double-sided display pixel package structure according to claim 12 .

15. The removable double-sided adhesive layer is an ultraviolet decomposable adhesive layer. The method for manufacturing the double-sided display pixel package structure according to claim 12 .

16. Each of the light-emitting diode structures includes a metal composite substrate, a first epitaxial layer, a second epitaxial layer, and an electrode layer; The metal composite substrate has a first Invar layer, a first copper layer, and a second copper layer; the first copper layer and the second copper layer are located on the upper and lower surfaces of the first Invar layer, respectively; the second copper layer is located between the first Invar layer and the conductive bump; a thickness ratio of the first copper layer, the first Invar layer, and the second copper layer of the metal composite substrate is 1:2.5 to 3.5:1; the first epitaxial layer has a first conductivity type and is disposed on the first copper layer; a second epitaxial layer having a second conductivity type opposite to the first conductivity type and disposed on the first epitaxial layer; the electrode layer is provided on the second epitaxial layer; the first protective layer surrounds the metal composite substrate, the first epitaxial layer, the second epitaxial layer, and the electrode layer; The conductive layer is provided on the electrode layer. The method for manufacturing the double-sided display pixel package structure according to claim 12 .

17. the dummy diode structure includes a second Invar layer, a first gold layer, and a second gold layer; the first gold layer and the second gold layer are respectively located on the upper and lower surfaces of the second Invar layer; the second gold layer is located between the second Invar layer and the conductive bump; a thickness ratio of the first gold layer, the second Invar layer, and the second gold layer is 1.1:2.5 to 3.5:1.1; 17. The method for manufacturing the double-sided display pixel package structure according to claim 16.

18. In the step of covering the plurality of light-emitting diode structures with the first protective layer, a difference in height between the first protective layer and the light-emitting diode structures is 4 to 8 μm. The method for manufacturing the double-sided display pixel package structure according to claim 12 .

19. In the step of forming the dummy diode structure and the plurality of light emitting diode structures on the plurality of conductive bumps, irradiating the conductive bumps with a laser having an output of 1 to 5 W for 15 to 60 ms, thereby forming the dummy diode structure and the light-emitting diode structure on each of the conductive bumps; The method for manufacturing the double-sided display pixel package structure according to claim 12 .

20. the plurality of light emitting diode structures include a green light emitting diode structure, a blue light emitting diode structure, and a red light emitting diode structure; The method for manufacturing the double-sided display pixel package structure according to claim 12 .

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