Device, device manufacturing apparatus, and device manufacturing method

Abstract

This device is provided with a chip which is bonded via a plurality of bumps, and a substrate which faces the chip. The device is provided with: multiple through-electrodes which pass through the chip and / or the substrate, and each of which has a first end connected to one corresponding bump of the plurality of bumps, and a second end opposite of the first end; a distortion sensor which is provided on the chip and which is electrically connected to the plurality of through-electrodes; and multiple external connection electrodes which are connected to the second ends of each of the through-electrodes and which are contacted by a probe which applies a voltage to the distortion sensor.

Description

[Technical Field]

[0001] The present disclosure relates to a device, a device manufacturing apparatus, and a device manufacturing method. [Background technology]

[0002] Patent Document 1 discloses a device manufacturing method for manufacturing a device including a chip bonded via bumps and a substrate facing the chip.

[0003] The device disclosed in Patent Document 1 includes a microcircuit for measuring resistance values ​​provided on a chip, and a plurality of bumps electrically connected to the microcircuit for measuring resistance values.

[0004] In the device manufacturing method disclosed in Patent Document 1, when the chip is pressed toward the substrate by the pressure mechanism, the bonding of the chip to the substrate is completed when the resistance value measured by applying a voltage to multiple bumps exceeds a predetermined threshold.

[0005] The resistance of the bump reflects its strength in the direction of vertical strain, so measuring the resistance of the bump being pressed and properly managing the resistance value enables stable bonding of the chip to the substrate.

[0006] Voltage is applied to the bumps by probes connected to the electrode pads on the substrate to which the bumps correspond. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] Patent No. 4471746 Summary of the Invention

[0008] A device according to one embodiment of the present disclosure is a device comprising a chip joined via a plurality of bumps and a substrate facing the chip, and comprising a plurality of through electrodes that penetrate at least one of the chip and the substrate and each have a first end connected to a corresponding one of the plurality of bumps and a second end opposite the first end, a strain sensor provided on the chip and electrically connected to the plurality of through electrodes, and a plurality of external connection electrodes that are connected to the second ends of each of the plurality of through electrodes and are in contact with a probe that applies a voltage to the strain sensor.

[0009] A device manufacturing apparatus according to one embodiment of the present disclosure is a device manufacturing apparatus for manufacturing a device including a chip bonded via a plurality of bumps and a substrate facing the chip, and includes: a stage for holding the substrate; a holding unit for holding the chip; a pressure unit for pressing the chip against the substrate by driving the holding unit; and a measurement unit for measuring, when the chip is pressed against the substrate by the pressure unit, the strain of the strain sensor via probes that contact a plurality of external connection electrodes connected to the second ends of a plurality of through electrodes that are electrically connected to a strain sensor provided on the chip, penetrate at least one of the chip and the substrate, and each have a first end connected to a corresponding one of the plurality of bumps and a second end opposite the first end.

[0010] A device manufacturing method according to one embodiment of the present disclosure is a device manufacturing method for manufacturing a device including a chip bonded via a plurality of bumps and a substrate facing the chip, and includes the steps of: pressing the chip against the substrate held on a stage by driving a holding unit that holds the chip; and measuring the strain of the strain sensor when the chip is pressed against the substrate via probes that contact a plurality of external connection electrodes connected to each of the second ends of a plurality of through electrodes that are electrically connected to a strain sensor provided on the chip, penetrate at least one of the chip and the substrate, and each have a first end connected to a corresponding one of the plurality of bumps and a second end opposite the first end. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a configuration diagram of a device 11 according to a first embodiment of the present disclosure. [Figure 2] A diagram showing a circuit for measuring the strain of the strain sensor 3. [Figure 3] 1 is a configuration diagram of a device manufacturing apparatus 19 according to a first embodiment of the present disclosure. [Figure 4] Flowchart for explaining the operation of device manufacturing apparatus 19 [Figure 5] FIG. 10 is a configuration diagram of a device manufacturing apparatus 19A according to a second embodiment of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0012] In the conventional technology of Patent Document 1, when the process of pressing the chip toward the substrate begins, it is necessary to position the probes on the electrode pads on the substrate, which requires time for the positioning work. In addition, after the probes contact the electrode pads, it takes time for the contact state to stabilize. Therefore, further improvement in device productivity has been desired.

[0013] Non-limiting examples of the present disclosure contribute to providing a device, a device manufacturing apparatus, and a device manufacturing method that can further improve productivity.

[0014] According to an embodiment of the present disclosure, it is possible to provide a device, a device manufacturing apparatus, and a device manufacturing method that can further improve productivity.

[0015] Further advantages and benefits of an embodiment of the present disclosure will become apparent from the specification and drawings. Such advantages and / or benefits may be provided by some of the embodiments and features described in the specification and drawings, respectively, but not necessarily all of them may be provided to obtain one or more identical features.

[0016] Preferred embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. In this specification and the drawings, components having substantially the same functions are designated by the same reference numerals, and redundant description will be omitted. In the following drawings, the shapes, thicknesses, lengths, etc. of the components shown in each figure may differ from the actual shapes, thicknesses, lengths, etc. of the components due to the creation of the drawings. Furthermore, the materials of the components are not limited to those described in this embodiment.

[0017] [Embodiment 1] An example configuration of the device 11 according to the first embodiment of the present disclosure will be described with reference to Fig. 1. Fig. 1 is a diagram illustrating the configuration of the device 11 according to the first embodiment of the present disclosure.

[0018] The device 11 may be a device made up of electrical components including semiconductors, a device made up of electrical components not including semiconductors, etc. In this embodiment, the device 11 will be described as a device made up of electrical components including semiconductors.

[0019] The device 11 includes a plurality of bumps 4, a chip 9, and a substrate 10. The chip 9, which is bonded via the plurality of bumps 4, and the substrate 10, which faces the chip, are integrally formed by ultrasonic bonding, thermocompression bonding, or the like.

[0020] (Bump 4) The bumps 4 are wiring leads formed on the substrate 10 or protruding connection electrodes formed on the surface of the chip 9. The material of the bumps 4 is gold, silver, copper, tungsten, or the like.

[0021] The bumps 4 are provided on the surface of the chip 9 at a portion facing the substrate 10 .

[0022] (Tip 9) The chip 9 includes a chip substrate 5 , a plurality of external connection electrodes 1 , a plurality of through electrodes 2 , and a strain sensor 3 .

[0023] (Chip substrate 5) The chip substrate 5 is a plate-like member made of, for example, silicon.

[0024] (External connection electrode 1) The external connection electrodes 1 are provided on the surface of the chip substrate 5 opposite to the bump 4 side. The external connection electrodes 1 are made of a material such as gold, silver, copper, or tungsten.

[0025] (Through electrode 2) The through electrodes 2 are electrodes that extend from the external connection electrodes 1 toward the bumps 4. The material of the through electrodes 2 is gold, silver, copper, tungsten, or the like.

[0026] An end (first end) of the through electrode 2 on the bump 4 side is connected to the bump 4. An end 2a (second end) of the through electrode 2 opposite to the bump 4 side is connected to the external connection electrode 1.

[0027] The through electrode 2 is also connected to the strain sensor 3. Therefore, the strain sensor 3 is electrically connected to the external connection electrode 1 via the through electrode 2. The connection of the through electrode 2 to the strain sensor 3 will be described in detail later.

[0028] (Strain sensor 3) The strain sensor 3 is a semiconductor strain gauge formed inside the chip substrate 5 by diffusing impurities such as boron and phosphorus into silicon, for example.

[0029] The resistance value of the strain sensor 3 changes depending on the amount of mechanical strain due to the piezo-resistance effect.

[0030] For example, when a constant current is supplied to the strain sensor 3 using the known four-terminal method, the resistance value of the strain sensor 3 can be measured based on the voltage generated in the strain sensor 3 and the supplied current.

[0031] The resistance value of the strain sensor 3 changes in accordance with the amount of strain of the strain sensor 3, so by measuring the change in the resistance value, the amount of deformation of the bump 4 located near the strain sensor 3 can be estimated.

[0032] (Dimensions of strain sensor 3) It is preferable that the width of the strain sensor 3 in the vertical direction is narrower than the width of the strain sensor 3 in the direction perpendicular to the vertical direction.

[0033] For example, if the width of the strain sensor 3 in the direction perpendicular to the vertical direction is set to 10 [nm] to 900 [nm], the width of the strain sensor 3 in the vertical direction is set to 10 [nm] to 500 [nm].

[0034] By narrowing the width in the vertical direction in this way, it is possible to increase the sensitivity of the strain sensor 3 in measuring the strain that occurs when the chip 9 is pressed against the substrate 10 in the vertical direction.

[0035] The strain sensor 3 is not limited to the semiconductor strain gauge described above, but may be a metal semiconductor strain gauge.

[0036] Metallic strain gauges are generally made of Cu-Ni alloys, Ni-Cr alloys, etc. By using metallic semiconductor strain gauges made of platinum metal, nickel, etc., it is possible to improve the sensitivity of strain measurement compared to gauges made of Cu-Ni alloys, Ni-Cr alloys, etc.

[0037] Generally, semiconductor strain gauges have strain measurement sensitivity several tens of times higher than that of metal strain gauges, so it is preferable to use semiconductor strain gauges as the strain sensor 3.

[0038] Semiconductors are classified as p-type (boron, etc. diffused) or n-type (phosphorus, etc. diffused) depending on the type of impurity diffused. P-type semiconductors can measure strain in the direction perpendicular to the vertical direction, while n-type semiconductors can measure strain in the vertical direction.

[0039] Therefore, when a strain sensor 3 formed of a p-type semiconductor and a strain sensor 3 formed of an n-type semiconductor are arranged on a chip substrate 5, it becomes possible to estimate the deformation amount of the bump 4 with high accuracy.

[0040] Furthermore, by using a strain sensor 3 that uses single crystal silicon, it is possible to increase the sensitivity of strain measurement. Since single crystal silicon is a widely available material, it is also possible to reduce the manufacturing cost of the strain sensor 3.

[0041] (Substrate 10) The substrate 10 includes a substrate substrate 8 and bond pads 7 .

[0042] (Substrate base material 8) The substrate base 8 is made of glass epoxy, ceramic, silicon, or the like.

[0043] (bonding pad 7) The bonding pads 7 are electrodes formed on the surface of the substrate base 8 facing the chip 9. The bonding pads 7 are made of, for example, gold, aluminum, copper, or the like.

[0044] Next, a circuit for measuring the strain of the strain sensor 3 will be described with reference to Fig. 2. Fig. 2 is a diagram showing a circuit for measuring the strain of the strain sensor 3.

[0045] As shown in FIG. 2, the chip substrate 5 includes four internal wirings 3a, 3b, 3c, and 3d connected to the strain sensor 3, and four through electrodes 2-1, 2-2, 2-3, and 2-4, as a circuit for measuring the strain of the strain sensor 3.

[0046] This circuit is independent of the functions that chip 9 originally has, for example, the circuits that configure the arithmetic processing function of chip 9.

[0047] One end of each of the four internal wirings 3 a , 3 b , 3 c , and 3 d is connected to the strain sensor 3 .

[0048] The other end of the internal wiring 3a is connected to the through electrode 2-1, and the other end of the internal wiring 3b is connected to the through electrode 2-2.

[0049] The other end of the internal wiring 3c is connected to the through electrode 2-3, and the other end of the internal wiring 3d is connected to the through electrode 2-4.

[0050] Each of the four through electrodes 2-1, 2-2, 2-3, and 2-4 is connected to an external connection electrode 1 shown in Fig. 1. By contacting these external connection electrodes 1 with probes, which will be described later, the strain of the strain sensor 3 can be measured by the four-terminal method.

[0051] Specifically, when a current is supplied from the through electrode 2-1 to the through electrode 2-4, a potential difference occurs between the through electrode 2-2 and the through electrode 2-3. By measuring this potential difference, i.e., the voltage generated between the through electrode 2-2 and the through electrode 2-3, the amount of strain in the strain sensor 3 can be measured.

[0052] In this way, by separating the circuit for measuring the strain of the strain sensor 3 from the circuit that constitutes the aforementioned arithmetic processing function, the strain of the strain sensor 3 can be measured without affecting the arithmetic processing function of the chip 9.

[0053] Furthermore, when the strain of the strain sensor 3 is measured using the four-terminal method, the influence of the resistance in the wiring and the contact resistance between the wiring, which can cause a decrease in the accuracy of the strain measurement, can be reduced, thereby improving the accuracy of the strain measurement.

[0054] The resistance in the wiring includes, for example, the resistance of the four internal wirings 3a, 3b, 3c, and 3d, the resistance of the four through electrodes 2-1, 2-2, 2-3, and 2-4, the resistance of the external connection electrodes 1 connected to each of the four through electrodes 2-1, 2-2, 2-3, and 2-4, and the resistance of the wiring 70.

[0055] The contact resistance between wirings is, for example, the contact resistance between the internal wiring 3a and the through electrode 2-1, the contact resistance between the through electrode 2-1 and the external connection electrode 1, and the like.

[0056] (Device Manufacturing Equipment 19) Next, a configuration example of device manufacturing apparatus 19 according to the first embodiment of the present disclosure will be described with reference to Fig. 3. Fig. 3 is a configuration diagram of device manufacturing apparatus 19 according to the first embodiment of the present disclosure.

[0057] The device manufacturing apparatus 19 is an apparatus that manufactures the device 11. In this embodiment, the device manufacturing apparatus 19 will be described as an apparatus that manufactures a device made up of electrical components including semiconductors.

[0058] The device manufacturing apparatus 19 includes a head 30, a stage unit 20, a measurement unit 40, and a control unit 50.

[0059] (Head 30) The head 30 includes a moving mechanism 31 that moves the chip 9 to a predetermined mounting position, a holding unit 33 that holds the chip 9, and a pressure unit 32 that applies pressure to the holding unit 33.

[0060] (Holding part 33) The holding portion 33 is formed with a through hole 34 for inserting a probe 42 therein.

[0061] (Through hole 34) The through-hole 34 extends from the surface of the holding part 33 on the pressure part 32 side to the surface of the holding part 33 on the stage 21 side.

[0062] A gap 34 a is formed between the wall surface that defines the through-hole 34 and the outer peripheral surface of the probe 42 .

[0063] (Gap 34a) The gap 34a functions as a space that generates a negative pressure between the holder 33 and the chip 9 when the holder 33 holds the chip 9 by vacuum suction.

[0064] For example, when the holding portion 33 lifts the chip 9 stored in a tray (not shown), a pump (not shown) connected to the holding portion 33 is driven to generate negative pressure in the gap 34a, thereby adsorbing the chip 9 to the holding portion 33.

[0065] In addition, taking into account the positioning accuracy of the holding portion 33 (approximately ±5 μm), it is preferable that the width of the surface of the probe 42 facing the external connection electrode 1 is approximately 10 μm smaller than the width of the surface of the external connection electrode 1 facing the probe 42.

[0066] This keeps the contact area between the external connection electrodes 1 and the probes 42 constant, thereby suppressing variations in distortion measurement that occur in each mounting process, that is, in each step of mounting one chip 9 on the substrate 10.

[0067] (Stage section 20) The stage unit 20 includes a stage 21 that holds the substrate 10, and a moving mechanism 22 that moves the substrate 10 to a predetermined position.

[0068] (Measuring part 40) The measuring section 40 includes a measuring device 41 and a probe 42 that comes into contact with the external connection electrode 1 of the chip 9 .

[0069] One end of a wire 70 is connected to the measuring device 41. The other end of the wire 70 is connected to a probe 42.

[0070] The measuring device 41 measures the resistance value of the strain sensor 3 in real time using the four-terminal method described above, and transmits data indicating the measured resistance value to the control unit 50.

[0071] (control unit 50) The control unit 50 includes a processing unit 51 , a pressure control unit 52 , and a memory 53 .

[0072] (Processing unit 51) The processing unit 51 receives data indicating the resistance value transmitted from the measurement unit 40, and calculates the amount of strain of the strain sensor 3 based on the data. The processing unit 51 generates a control command for controlling the pressure unit 32 based on the calculated amount of strain of the strain sensor 3.

[0073] (Pressure control unit 52) The pressure applying unit 32 is controlled based on a control command sent from the processing unit 51 .

[0074] (Memory 53) In the memory 53, for example, the initial value of the distortion amount calculated by the processing unit 51 is recorded.

[0075] The control unit 50 may be configured to include a control circuit for controlling the movement of the stage 21.

[0076] Next, the operation of device manufacturing apparatus 19 will be described with reference to Fig. 4. Fig. 4 is a flowchart for explaining the operation of device manufacturing apparatus 19.

[0077] In step S1, the substrate 10 is moved to the stage 21 and placed on the stage 21, and then the process of step S2 is executed.

[0078] In step S2, the holder 33 holds the chip 9 stored in a tray (not shown) by vacuum suction.

[0079] At this time, the probes 42 inserted into the through holes 34 of the holder 33 are held so as to come into contact with the external connection electrodes 1 of the chip 9 .

[0080] As a result, the probe 42, the external connection electrode 1, the through electrode 2, and the strain sensor 3 are electrically connected.

[0081] In step S3, the chip 9 is aligned with respect to the substrate 10 by the moving mechanism 31 and the moving mechanism 22. Thereafter, the process of step S4 is executed.

[0082] In step S4 , the processing unit 51 calculates an initial value of the amount of strain of the strain sensor 3 , and stores the calculated initial value of the amount of strain in the memory 53 .

[0083] In step S5, the pressure control unit 52 controls the pressure unit 32, so that the chip 9 descends toward the substrate 10.

[0084] After the bumps 4 on the descending chip 9 come into contact with the bonding pads 7 on the substrate 10, the pressure unit 32 further presses the chip 9 toward the substrate 10, thereby advancing the metal bonding between the bumps 4 and the bonding pads 4.

[0085] The metal bonding develops, and the chip 9 is firmly connected to the substrate 10 .

[0086] In addition to applying pressure, the pressure control unit 52 may also apply ultrasonic vibration, heat, or the like to improve the bonding strength between the chip 9 and the substrate 10.

[0087] In step S6, the processing unit 51 receives data indicating the resistance value measured in real time by the measuring device 41 while the chip 9 is being pressed against the substrate 10, that is, during the mounting process.

[0088] The processing unit 51 calculates the amount of strain of the bump 4 based on the received data indicating the resistance value, using a known method for calculating the amount of strain. Thereafter, the process of step S7 is executed.

[0089] In step S7, processing unit 51 determines whether or not the bonding strength between chip 9 and substrate 10 has reached a desired bonding strength.

[0090] For example, if correspondence information that associates the initial value of the amount of distortion, the amount of change in the amount of distortion, and the bonding strength is stored in memory 53, processing unit 51 refers to the correspondence information during the mounting process and reads out the bonding strength that corresponds to the calculated amount of distortion of bump 4.

[0091] The processing unit 51 determines whether the read bonding strength reaches a desired bonding strength, thereby ensuring the bonding quality of the bumps 4 to the bonding pads 7 required during the mounting process.

[0092] If the bonding strength does not reach the desired bonding strength, the processing unit 51 determines that the bonding is not completed. In this case (step S7, NO), the processing of step S8 is executed.

[0093] In step S8, processing unit 51 determines whether or not a bonding abnormality has occurred due to damage to bonding pad 7. For example, the amount of strain of the strain sensor and the strength of the bonding pad (limit strain amount of the bonding pad) are linked in advance to set a threshold value, and if the amount of strain of the strain sensor exceeds the set threshold value during bonding, processing unit 51 determines that the bonding pad has been destroyed, and that a bonding abnormality has occurred.

[0094] If no abnormal bonding has occurred (step S8, NO), the processes from step S5 onwards are repeated.

[0095] If a bonding abnormality has occurred (YES in step S8), the process of step S9 is executed.

[0096] In step S9, an error mark indicating that a bonding abnormality has occurred is applied to the chip 9. The mark is applied by a marking mechanism (not shown), and then the series of processes is completed.

[0097] By adding an error mark to the chip 9, it is possible to identify the chip 9 with the error mark during shipping inspection, thereby preventing chips 9 with bonding abnormalities from being released onto the market.

[0098] Returning to step S7, if the bonding strength reaches the desired bonding strength, the processing unit 51 determines that the bonding is complete. In this case (step S7, YES), the processing unit 51 executes the process of step S10.

[0099] In step S10, the processing unit 51 sends an instruction signal to the pressure control unit 52 to instruct the completion of the mounting process.

[0100] Upon receiving the instruction signal, the pressure control unit 52 stops the pressing operation of the pressure unit 32 against the chip 9 and further raises the holding unit 33. This ends the mounting process, and then the processing of step S11 is executed.

[0101] In step S11, the substrate 10 on which the chip 9 is mounted is transported from the stage 21. This completes the series of processes.

[0102] In step S4, when calculating the initial value of the distortion amount, processing unit 51 may be configured to inspect the state of the circuit that constitutes the function that chip 9 originally has, using probe 42. This allows only chips 9 whose functions are normal to be mounted on substrate 10, thereby reducing loss of substrate 10 due to the mounting of chips 9 whose functions are abnormal.

[0103] It is preferable that the device manufacturing equipment 19 extracts features such as the time required to complete bonding during the mounting process from step S1 to step S11, and manages the state of the device manufacturing equipment 19 using known statistical quality control (e.g., Xbar-R control chart) for these features.

[0104] This makes it possible to detect deterioration over time, sudden failures, etc. of device manufacturing equipment 19 and notify an alarm to the worker. Furthermore, when device manufacturing equipment 19 detects deterioration over time, sudden failures, etc. of device manufacturing equipment 19, it automatically optimizes the mounting conditions, thereby suppressing deterioration in bonding quality and reducing loss of substrates 10. Furthermore, it is possible to suppress an increase in the number of steps required for periodic status checks of device manufacturing equipment 19.

[0105] As described above, the device manufacturing apparatus 19 according to the first embodiment of the present disclosure is configured to ensure the quality of bonding of the bumps 4 to the bonding pads 7 by calculating the amount of strain of the strain sensors 3 provided on the chip 9 during the mounting process of bonding the chip 9 to the substrate 10.

[0106] This configuration can prevent the joining operation from ending even though the joining is insufficient, and can provide a stable joining strength.

[0107] Furthermore, device manufacturing apparatus 19 can prevent excessive bonding operations, thereby suppressing damage to bonding pads 7.

[0108] Furthermore, the device manufacturing apparatus 19 according to this embodiment measures the initial value of the distortion when picking up or positioning the chip 9, thereby enabling distortion measurement during the mounting process and the bonding quality of the bumps 4 to the bonding pads 7 without reducing the productivity of the device 11.

[0109] Furthermore, device 11 according to this embodiment does not use a microcircuit for measuring resistance value as in the prior art, and therefore it is possible to shorten the path from probe 42 to chip substrate 5. Therefore, noise generated in the mounting process of device manufacturing equipment 19 is less likely to infiltrate into this path, and a decrease in the accuracy of measuring the amount of distortion due to noise can be suppressed.

[0110] Furthermore, in device manufacturing apparatus 19, when chip 9 is mounted on substrate 10 by ultrasonic mounting, if holder 33 vibrates at a vibration frequency of, for example, 60 kHz, the temperature of holder 33 rises.

[0111] By forming the aforementioned gap 34a, heat from the holding portion 33 is less likely to be transmitted to the probe 42, thereby preventing fluctuations in the resistance value measured by the measuring portion 40 due to an increase in the temperature of the probe 42.

[0112] [Embodiment 2] Next, a configuration example of a device manufacturing apparatus 19A according to the second embodiment of the present disclosure will be described with reference to FIG.

[0113] FIG. 5 is a configuration diagram of a device manufacturing apparatus 19A according to the second embodiment of the present disclosure.

[0114] The device manufacturing apparatus 19A includes a device 11A, a stage part 20A, and a head 30A, instead of the device 11, the stage part 20, and the head 30 described above.

[0115] (Device 11A) Device 11A includes, instead of chip 9 and substrate 10, chip 9A and substrate 10A.

[0116] (Chip 9A) The chip 9A includes a chip substrate 5 and a strain sensor 3. The strain sensor 3 is electrically connected to the chip substrate 5 via an internal line (not shown).

[0117] (Substrate 10A) The substrate 10A includes a substrate base 8 and bonding pads 7, as well as a plurality of through electrodes 12 and a plurality of external connection electrodes 13.

[0118] (Through electrode 12) The through electrode 12 is an electrode that extends from the bonding pad 7 toward the external connection electrode 13. An end (first end) of the through electrode 12 on the bonding pad 7 side is connected to the bonding pad 7.

[0119] An end 12a (second end) of the through electrode 12 opposite to the bonding pad 7 side is connected to the external connection electrode 13. The material of the through electrode 12 is gold, silver, copper, tungsten, or the like.

[0120] (External connection electrode 13) The external connection electrodes 13 are provided on the surface of the substrate base 8 facing the stage 21A. The external connection electrodes 13 are made of a material such as gold, silver, copper, or tungsten.

[0121] The external connection electrodes 13 are electrically connected to the strain sensor 3 via the through electrodes 12 , the bonding pads 7 , and the bumps 4 .

[0122] The head 30A has a holding portion 33A instead of the holding portion 33. The through-hole 34 shown in FIG. 3 is omitted from the holding portion 33A.

[0123] The stage section 20A includes a stage 21A instead of the stage 21. A through hole 23 for inserting a probe 42 is formed in the stage 21A.

[0124] The through-hole 23 extends from the surface of the stage 21A on the moving mechanism 22 side toward the surface of the stage 21A on the holding part 33A side.

[0125] The probe 42 inserted into the through hole 23 is in contact with the external connection electrode 13 of the chip 9A.

[0126] A gap 23 a is formed between the wall surface forming the through-hole 23 and the outer peripheral surface of the probe 42 .

[0127] In the device manufacturing apparatus 19A configured as described above, the substrate 10A is placed on the stage part 20A so that the probes 42 come into contact with the external connection electrodes 13.

[0128] As a result, the probe 42 is electrically connected to the strain sensor 3 via the external connection electrode 13, the through electrode 12, and the bonding pad 7. Therefore, the measuring unit 40 connected to the probe 42 can measure the resistance value of the strain sensor 3.

[0129] In device manufacturing apparatus 19A configured as described above, when chip 9A is mounted on substrate 10A by ultrasonic mounting, holding portion 33A vibrates at a vibration frequency of, for example, 60 kHz.

[0130] In device manufacturing apparatus 19A, probe 42 is provided on stage 21A, so even if such high-frequency vibration is applied to holder 33A, no friction occurs between probe 42 and external connection electrode 13. Therefore, wear of probe 42 can be prevented.

[0131] Furthermore, in device manufacturing equipment 19A, when chips 9A are mounted on substrate 10A by local reflow bonding, rapid heating and cooling of holder 33A is repeated for each chip 9A.

[0132] In device manufacturing apparatus 19A, probe 42 is provided on stage 21A, so that the thermal shock caused by this rapid temperature increase and cooling is not transmitted to probe 42, and deterioration of probe 42 can be suppressed.

[0133] Although the present disclosure has been fully described in connection with the preferred embodiments with reference to the accompanying drawings, various changes and modifications will be apparent to those skilled in the art. Such changes and modifications should be understood to be included within the scope of the present disclosure as defined by the appended claims, unless they depart therefrom. Furthermore, changes in the combination and order of elements in the embodiments may be made without departing from the scope and spirit of the present disclosure. [Industrial Applicability]

[0134] An embodiment of the present disclosure is suitable for a device, a device manufacturing apparatus, and a device manufacturing method. [Explanation of symbols]

[0135] 1 External connection electrode 2 Through electrode 2-1 Through electrode 2-2 Through electrode 2-3 Through electrode 2-4 Through electrode 2a end 3 Strain Sensor 3a internal wiring 3b Internal wiring 3c internal wiring 3d internal wiring 4. Bump 5 Chip substrate 7 Bonding Pads 8 Substrate 9 chips 9A chip 10 Substrate 10A board 11 Devices 11A Device 12 Through electrode 12a end 13 External connection electrode 19 Device manufacturing equipment 19A Device manufacturing equipment 20 Stage Section 20A Stage Section 21 Stages Stage 21A 22 Moving mechanism 23 through hole 23a Gap 30 heads 30A head 31 Moving mechanism 32 Pressure section 33 Holding part 33A Holding part 34 Through hole 34a Gap 41 Measuring instruments 42 Probe 50 control section 51 Processing section 52 Pressure control section 53 Memory 70 Wiring

Claims

1. A device for a product including a chip bonded via bumps and a substrate facing the chip, a through electrode that penetrates at least one of the chip and the substrate; a strain gauge provided on the chip and electrically connected to the through electrode; a plurality of external connection electrodes connected to ends of the through electrodes opposite to the bump side and contacting probes that apply voltage to the strain gauges; Equipped with the probe is inserted into a through-hole formed in a holder for holding the chip or a stage for holding the substrate of a device manufacturing apparatus, thereby contacting the external connection electrode; When the holding portion is driven to press the chip against the substrate, a voltage is applied to the strain gauge via the external connection electrode, thereby making it possible to measure the bonding strength of the bump. Device equipment.

2. The device according to claim 1 , comprising four of the external connection electrodes.

3. 1. A device manufacturing apparatus for manufacturing a device for a product including a chip bonded via bumps and a substrate facing the chip, a stage for holding the substrate; a holder for holding the chip; a pressure unit that presses the chip against the substrate by driving the holding unit; a measuring unit that, when the chip is pressed against the substrate by the pressure unit, measures the bonding strength of the bump by applying a voltage to the strain gauge via probes that are in contact with a plurality of external connection electrodes connected to ends of through electrodes that are electrically connected to the strain gauges provided on the chip and that penetrate at least one of the chip and the substrate, on the opposite side from the bump side; Equipped with The probe is inserted into a through-hole formed in at least one of the stage and the holder, and thereby comes into contact with the external connection electrode. Device manufacturing equipment.

4. 4. The device manufacturing apparatus according to claim 3, wherein a gap is formed between a surface of the probe and a wall surface defining the through-hole.

5. 1. A device manufacturing method for manufacturing a device for a product including a chip bonded via bumps and a substrate facing the chip, comprising: a first step of holding the substrate on a stage and holding the chip by a holder; a second step of pressing the chip against the substrate held by the stage by driving the holder that holds the chip; a third step of measuring the bonding strength of the bumps by applying a voltage to the strain gauges via probes that contact a plurality of external connection electrodes connected to ends of through electrodes that are electrically connected to strain gauges provided on the chip and that penetrate at least one of the chip and the substrate, the ends being opposite to the bump side, when the chip is pressed against the substrate; Including, In the first step, the probe is inserted into a through-hole formed in at least one of the stage and the holder, thereby contacting the external connection electrode. Device manufacturing methods.

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