Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus and a substrate processing method capable of forming a good liquid film on the surface of a substrate.SOLUTION: A substrate processing apparatus 1 includes a rotation holding unit 10 capable of rotating a substrate 100 having a hydrophobic material, a first processing liquid supply unit 24 capable of supplying an etching liquid to the surface of a rotating substrate, a hydrophilization processing unit 40 that applies hydrophilic processing to the surface of the rotating substrate, and a controller 50 that can control the hydrophilization processing unit 40. When the etching liquid is supplied to the surface of the substrate by the first processing liquid supply unit 24, the controller 50 controls the hydrophilization processing unit 40 to perform the hydrophilization processing on the surface of the substrate.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] In manufacturing processes for semiconductor devices, flat panel displays, and the like, an etching solution is supplied to a film formed on the surface of a substrate, such as a wafer or glass substrate, to form a desired pattern. A rinse solution is supplied to the surface of the etched substrate, and cleaning is performed to remove the etching solution and residues remaining on the surface of the substrate. Drying is then performed to remove the rinse solution remaining on the surface of the cleaned substrate. For example, a spin processing device rotates the substrate supported on a rotary table to spin off the rinse solution on the surface of the substrate, thereby drying the substrate.

[0003] In recent years, a phenomenon has been observed in which a pattern formed on a substrate collapses in a specific region on the substrate after the substrate has been dried.

[0004] As a result of intensive research by the inventors, the following was discovered: In recent years, materials contained locally (partially) in substrates have become hydrophobic metal materials and the like. When such substrates are subjected to an etching process, the hydrophobic material may become exposed on the surface of the substrate. The aforementioned pattern collapse occurs in the portion where this hydrophobic material is exposed.

[0005] In this case, it is also possible to form a hydrophilic film on the substrate to make the surface of the substrate hydrophilic (see, for example, Patent Document 1). However, since such a hydrophilic film is provided on the substrate before the etching process, the hydrophilic film is removed by the etching process. Therefore, there has been a demand for the development of a technology that can form a good liquid film on the surface of a substrate. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-340266 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that are capable of forming a good liquid film on the surface of a substrate. [Means for solving the problem]

[0008] The substrate processing apparatus according to the embodiment includes: a rotary holder capable of rotating a substrate having a hydrophobic material; a first processing liquid supply unit capable of supplying an etching liquid to the surface of the rotating substrate; a hydrophilic treatment section that performs hydrophilic treatment on the surface of the rotating substrate; a controller capable of controlling the spin holder, the first processing liquid supply unit, and the hydrophilization processing unit; Equipped with The controller The etching liquid is supplied to the surface of the substrate by the first processing liquid supply unit. A liquid film made of the etching liquid is formed on the surface of the substrate. , After a predetermined time has elapsed since the supply of the etching solution, a hydrophilic treatment is performed by irradiating the surface of the substrate with ultraviolet light by the hydrophilic treatment unit through a liquid film made of the etching solution supplied to the surface of the substrate; When the hydrophilic treatment is performed, the thickness of the liquid film is than before the hydrophilization treatment The rotation holder is controlled to increase the rotation speed of the substrate so as to make it thinner. [Effects of the Invention]

[0009] According to the embodiments of the present invention, a substrate processing apparatus and a substrate processing method capable of forming a good liquid film on the surface of a substrate are provided. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a schematic view illustrating a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 3A to 3C are schematic cross-sectional views illustrating the relationship between the surface properties of a substrate and the form of a liquid film. [Figure 3] 10 is a flowchart illustrating the operation of the substrate processing apparatus. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments will be illustrated with reference to the drawings. In each drawing, like components are designated by like reference numerals and detailed descriptions thereof will be omitted where appropriate. The manufacturing process of a microstructure such as a semiconductor device or a flat panel display may include a step of etching a film provided on a surface of a substrate using an etching solution, a step of cleaning the etched surface of the substrate using a rinse solution, and a step of drying the cleaned surface of the substrate. The substrate processing apparatus and substrate processing method according to the present embodiment can be used between the step of cleaning the surface of the substrate and the step of drying the surface of the substrate.

[0012] FIG. 1 is a schematic view illustrating a substrate processing apparatus 1 according to the present embodiment. As shown in FIG. 1, the substrate processing apparatus 1 includes, for example, a spin holder 10, a supply unit 20, a hydrophilization unit 40, and a controller 50.

[0013] The rotation holder 10 holds the substrate 100 and rotates the held substrate 100 . The rotating and holding unit 10 includes, for example, a rotating unit 11, a holding unit 12, and a collecting unit 13.

[0014] The rotating part 11 has, for example, a mounting part 11a, a shaft 11b, and a rotation driving part 11c. The mounting portion 11a is plate-shaped and has a recess 11a1 that opens on one surface. The shaft 11b is columnar and connected to the surface of the mounting portion 11a opposite to the side where the recess 11a1 opens. For example, the shaft 11b is formed integrally with the mounting portion 11a. The rotation drive unit 11c rotates the mounting unit 11a via the shaft 11b. The rotation drive unit 11c also controls the rotation speed and direction of the mounting unit 11a. The rotation drive unit 11c includes a control motor such as a servo motor.

[0015] The holding portion 12 has, for example, a support pin 12a and a holding pin 12b. The support pins 12a are columnar and are provided near the periphery of the surface of the mounting portion 11a where the recess 11a1 opens. A plurality of support pins 12a are provided. The tops of the support pins 12a contact the outer periphery of the back surface 100b of the substrate 100 (the surface opposite to the side where the processing liquid is supplied).

[0016] The holding pins 12b are columnar and are provided near the periphery of the surface of the mounting portion 11a where the recess 11a1 opens. The holding pins 12b are provided further outward than the support pins 12a. Multiple holding pins 12b are provided. The sides of the multiple holding pins 12b contact the sides of the substrate 100. If multiple holding pins 12b are provided, it is possible to prevent the position of the substrate 100 from shifting due to centrifugal force. The processing liquid supplied to the surface 100a of the substrate 100 by the supply portion 20 is discharged to the outside from between the multiple holding pins 12b.

[0017] The collection unit 13 includes, for example, a cup 13a and a transfer unit 13b. The cup 13a is cylindrical. The cup 13a contains a mounting portion 11a, a shaft 11b, and a holder 12. The cup 13a surrounds the mounting portion 11a. The cup 13a has an open upper end. A bottom plate is provided at the lower end of the cup 13a. The shaft 11b passes through a hole provided in the bottom plate. The lower end of the shaft 11b is provided outside the cup 13a and is connected to the rotation driver 11c. A recovery tank (not shown) is connected to the bottom plate of the cup 13a via piping. The processing liquid supplied to the surface 100a of the substrate 100 and discharged outside the substrate 100 by centrifugal force is captured by the inner wall of the cup 13a. The cup 13a is inclined inward near the upper end, thereby preventing the processing liquid from splashing outside the cup 13a. The processing liquid captured by the inner wall of the cup 13a is stored inside the cup 13a and sent to a recovery tank (not shown) via a pipe.

[0018] The moving unit 13b raises and lowers the cup 13a. The moving unit 13b is equipped with, for example, an air cylinder. For example, when placing the substrate 100 on the holder 12 or removing the substrate 100 from the holder 12, as shown in FIG. 1, the moving unit 13b lowers the cup 13a so that the holder 12 is positioned near the opening of the cup 13a. This makes it easy to transfer the substrate 100. On the other hand, when supplying a processing liquid to the surface 100a of the substrate 100, the moving unit 13b raises the cup 13a so that the substrate 100 is positioned inside the cup 13a. This makes it easy to capture the processing liquid discharged outside the substrate 100.

[0019] The supply unit 20 supplies a processing liquid to the surface 100 a of the substrate 100 held by the spin holder 10 . The supply unit 20 has, for example, a nozzle 21, an arm 22, an arm drive unit 23, a processing liquid supply unit 24 (corresponding to an example of a first processing liquid supply unit), a processing liquid supply unit 25 (corresponding to an example of a second processing liquid supply unit), and a processing liquid supply unit 26. The nozzle 21 is provided above the mounting part 11a. An outlet 21a is provided at the end of the nozzle 21 on the mounting part 11a side. A space is provided inside the nozzle 21 for guiding the processing liquid to the outlet 21a. A supply port is provided at the end of the nozzle 21 opposite to the outlet 21a side or on the side of the nozzle 21 for supplying the processing liquid into the nozzle 21.

[0020] The arm 22 holds the nozzle 21. The arm 22 is also capable of rotating in the horizontal direction. The arm driving unit 23 rotates the arm 22. The arm driving unit 23 has, for example, an air cylinder or a control motor such as a servo motor.

[0021] For example, when supplying a processing liquid to the surface 100a of the substrate 100, the arm driving unit 23 rotates the arm 22 so that the outlet 21a of the nozzle 21 is positioned above a predetermined position on the surface 100a of the substrate 100 (for example, near the center of the surface 100a of the substrate 100). For example, when transferring the substrate 100 to the holder 12, the arm driver 23 rotates the arm 22 to retract the arm 22 and the nozzle 21 to a standby position outside the placement unit 11a.

[0022] The processing liquid supply unit 24 supplies an etching liquid 101, which is a type of processing liquid, to the nozzle 21. The temperature of the etching liquid 101 can be room temperature or a temperature higher than room temperature. Supplying an etching liquid at a temperature higher than room temperature to the surface 100a of the substrate 100 can promote a chemical reaction between the portion to be removed of the substrate 100 and the etching liquid. This can improve the etching rate, and ultimately improve productivity.

[0023] The processing liquid supply unit 24 includes, for example, a tank 24a, a supply unit 24b, a processing liquid control unit 24c, and a heating unit 24d. The tank 24a stores therein an etching solution 101. The etching solution 101 is, for example, a solution containing hydrofluoric acid and nitric acid, a solution containing hydrofluoric acid, acetic acid and nitric acid, or a solution containing phosphoric acid.

[0024] The supply unit 24b supplies the etching liquid 101 stored inside the tank 24a to the nozzle 21. The supply unit 24b is, for example, a chemical pump. The processing liquid control unit 24c is provided between the supply unit 24b and the nozzle 21. The processing liquid control unit 24c controls, for example, the flow rate and pressure of the etching liquid 101. The processing liquid control unit 24c also controls the supply and stop of the supply of the etching liquid 101.

[0025] The heating unit 24d is provided, for example, inside the tank 24a or on the outer wall of the tank 24a. The heating unit 24d is, for example, a heater that generates Joule heat when energized. In this case, the heating unit 24d changes the temperature of the etching solution 101 depending on the type of etching solution 101. For example, when the etching solution 101 is a solution containing hydrofluoric acid, acetic acid, and nitric acid, the heating unit 24d heats the etching solution 101 so that the temperature of the etching solution 101 supplied to the surface 100a of the substrate 100 becomes approximately 80°C. For example, when the etching solution 101 is a solution containing phosphoric acid, the heating unit 24d heats the etching solution 101 so that the temperature of the etching solution 101 supplied to the surface 100a of the substrate 100 becomes approximately 160°C.

[0026] At least the parts of the tank 24a, the supply unit 24b, the processing liquid control unit 24c, and the piping connecting these components that come into contact with the etching liquid 101 are made of a material with high heat resistance and chemical resistance. For example, these parts are made of fluororesin or coated with fluororesin.

[0027] The components and temperature of the etching solution 101 are not limited to those exemplified above, and can be changed as appropriate depending on the material of the portion to be removed on the surface 100a of the substrate 100. In this case, the relationship between the components and temperature of the etching solution 101 and the material of the portion to be removed can be determined in advance, for example, by conducting experiments or simulations.

[0028] The processing liquid supply unit 25 supplies a rinse liquid 102, which is a type of processing liquid, to the nozzle 21. That is, the processing liquid supply unit 25 supplies the rinse liquid 102 to the surface 100a of the substrate 100 that is rotating. The processing liquid supply unit 25 includes, for example, a tank 25a, a supply unit 25b, and a processing liquid control unit 25c. The tank 25a contains therein a rinse liquid 102. The rinse liquid 102 is, for example, pure water.

[0029] The supply unit 25b supplies the rinse liquid 102 stored inside the tank 25a to the nozzle 21. The supply unit 25b is, for example, a chemical pump. The processing liquid control unit 25c is provided between the supply unit 25b and the nozzle 21. The processing liquid control unit 25c controls, for example, the flow rate and pressure of the rinse liquid 102. The processing liquid control unit 25c also controls the supply and stop of the rinse liquid 102.

[0030] The processing liquid supply unit 26 supplies a protection liquid 103, which is a type of processing liquid, to the nozzle 21. That is, the processing liquid supply unit 26 supplies the protection liquid 103 to the surface 100a of the substrate 100 that is rotating.

[0031] The processing liquid supply unit 26 includes, for example, a tank 26a, a supply unit 26b, and a processing liquid control unit 26c. The tank 26a stores therein a protection liquid 103. The protection liquid 103 is, for example, pure water with less dissolved oxygen than the rinse liquid 102. The action and effect of the protection liquid 103 will be described later.

[0032] The supply unit 26b supplies the protection liquid 103 stored inside the tank 26a to the nozzle 21. The supply unit 26b is, for example, a chemical pump. The treatment liquid control unit 26c is provided between the supply unit 26b and the nozzle 21. The treatment liquid control unit 26c controls, for example, the flow rate and pressure of the protection liquid 103. The treatment liquid control unit 26c also controls the supply and stop of the protection liquid 103.

[0033] The tanks 25a, 26a, the supply units 25b, 26b, the processing liquid control units 26c, 26c, and the piping connecting these do not necessarily need to be made of highly chemically resistant and heat resistant materials, but can be made of the same materials as in the processing liquid supply unit 24. In this way, the processing liquid supply units 24 to 26 have the same configuration, and therefore the manufacturing process of the substrate processing apparatus 1 can be simplified.

[0034] Furthermore, in the above example, the case where the processing liquid supply units 24 to 26 are connected to one nozzle 21 has been exemplified, but a plurality of nozzles 21 may also be provided. For example, a nozzle 21 may be provided for each of the processing liquid supply units 24 to 26. Alternatively, one nozzle 21 may be provided for the processing liquid supply unit 24 that supplies the etching liquid 101, and one nozzle 21 may be provided for the processing liquid supply unit 25 that supplies the rinsing liquid 102 and the processing liquid supply unit 26 that supplies the protection liquid 103. Using a nozzle 21 for multiple purposes can reduce manufacturing costs. Providing nozzles 21 according to the components of the processing liquid makes it easier to prevent deterioration of the processing liquid.

[0035] For example, in the case of a conventional silicon wafer, an oxide film is generally exposed on the surface 100a of the substrate 100. If an oxide film such as silicon oxide is present on the surface 100a of the substrate 100, the surface 100a of the substrate 100 will be hydrophilic. Here, if the surface 100a of the substrate 100 after etching with the etching solution 101 is an oxide film (highly wettable), the liquid film 102a formed on the surface 100a of the substrate 100 after cleaning with the rinse solution 102 will not be intermittent, and a good liquid film 102a can be formed.

[0036] However, in recent years, the materials contained in the substrate 100 have become more diverse, and various hydrophobic materials such as metals, inorganic substances, and resins may be exposed on the surface 100a of the substrate 100. In particular, such materials may be exposed in a partial region of the surface 100a of the substrate 100. In such cases, the surface 100a of the substrate 100 where the above-mentioned materials are exposed may not necessarily be hydrophilic. If at least a partial region of the surface 100a of the substrate 100 is not hydrophilic, the liquid film 102a may become thin, intermittent, or bead-like (see FIG. 2).

[0037] FIG. 2 is a schematic cross-sectional view illustrating the relationship between the properties of the surface 100a of the substrate 100 and the form of the liquid film 102a. In Figure 2, region A is a region with high hydrophilicity, and region B is a region with low hydrophilicity. In this specification, a highly hydrophilic region refers to, for example, a hydrophilic region or a region having hydrophilic properties. As described above, a hydrophilic region is, for example, a region where the surface 100a of the substrate 100 is formed of an oxide film. A less hydrophilic region, that is, a region having lower hydrophilic properties than region A, is, for example, a hydrophobic region. As described above, a hydrophobic region is, for example, a region where a hydrophobic material is exposed on the surface 100a of the substrate 100. Whether or not the region B with low hydrophilicity is formed depends on the components of the material exposed on the surface 100a of the substrate 100. Although Fig. 2 illustrates an example in which the region B with low hydrophilicity is formed near the periphery of the substrate 100, the region B with low hydrophilicity can be formed anywhere on the surface 100a of the substrate 100.

[0038] As shown in FIG. 2, the liquid film 102a on the highly hydrophilic region A is not intermittent, and a good liquid film 102a can be formed. On the other hand, the liquid film 102a1 on the less hydrophilic region becomes thinner, or the liquid film 102a2 becomes intermittent. In this case, the intermittent liquid film 102a2 may become droplet-shaped. Furthermore, the surface 100a of the substrate 100 is exposed between the thin liquid film 102a1 and the intermittent liquid film 102a2, or between the intermittent liquid films 102a2.

[0039] In the rinsing process after the etching process, a rinse liquid 102 is supplied to the surface 100a of the substrate 100, forming a liquid film 102a on the surface 100a of the substrate 100. A thin liquid film 102a1 and an intermittent liquid film 102a2 are formed in the less hydrophilic region B of the surface 100a of the substrate 100. When the intermittent liquid film 102a is formed in the less hydrophilic region B, the surface 100a of the substrate 100 is exposed, as described above. At the boundary between the portion where the liquid film 102a is formed and the exposed portion of the surface 100a of the substrate 100, some patterns contain rinse liquid, while others do not. As a result, the balance of the force exerted by the surface tension on the rinse liquid between the adjacent patterns is disrupted, and the patterns are pulled toward the side with the stronger surface tension, elastically deforming and collapsing. Furthermore, residues slightly dissolved in the rinse liquid 102 aggregate in the collapsed portions of the patterns. Furthermore, if the rinse liquid 102 is completely evaporated in the drying step after the rinsing step, the collapsed patterns will stick together, and the collapsed patterns will result in the manufactured semiconductor device or the like becoming a defective product.

[0040] Therefore, in the substrate processing apparatus 1 according to this embodiment, hydrophilization, that is, irradiation with ultraviolet rays, is performed before the rinsing process and during or during the etching process. For example, if the surface 100a of the substrate 100 after etching has a hydrophobic surface, it is assumed that pattern collapse has already occurred. Therefore, ultraviolet light is irradiated during the etching process so that the surface 100a of the substrate 100 after etching is already in a hydrophilic state. For example, as the etching target film formed on the surface 100a of the substrate 100 is etched with an etching solution, the hydrophobic material portions are gradually exposed. While the hydrophobic material portions are gradually exposed, they are irradiated with ultraviolet light. Therefore, the hydrophobic material is hydrophilized by the ultraviolet light at the stage where it is gradually exposed. As a result, after the etching process, the surface 100a of the substrate 100 is hydrophilized, and in the subsequent rinsing process, the rinsing solution 102 is not repelled by the surface 100a of the substrate 100, and a puddle of the rinsing solution 102 is formed over the entire surface 100a of the substrate 100. In other words, pattern collapse can be prevented during the rinsing process.

[0041] Therefore, the substrate processing apparatus 1 according to this embodiment is provided with a hydrophilic treatment section 40 that performs hydrophilic treatment on the surface 100a of the substrate 100. The hydrophilic treatment unit 40, for example, irradiates ultraviolet rays onto the surface 100a of the substrate 100. When the ultraviolet rays are incident on the surface 100a of the substrate 100, the surface 100a of the substrate 100 is modified, and the surface 100a of the substrate 100 becomes hydrophilic. In particular, the portions of the surface 100a of the substrate 100 where the hydrophobic material is exposed are modified to become hydrophilic. Specifically, when ultraviolet light is irradiated onto the surface 100a of the substrate 100, molecular chains in the surface layer of the portions of the surface 100a of the substrate 100 where the hydrophobic material is exposed are cut, and functional groups (OH, CHO, COOH, etc.) are generated by reaction with the cut molecules. These functional groups are generated in the portions of the surface 100a of the substrate 100 where the hydrophobic material is exposed, and the surface 100a of the substrate 100 is modified to be hydrophilic. The hydrophilic treatment unit 40 includes, for example, an ultraviolet lamp, an ultraviolet light emitting diode, etc. The wavelength of the ultraviolet light is, for example, 185 nm, 254 nm, 365 nm, etc.

[0042] 1, the hydrophilic treatment unit 40 can be provided, for example, on the arm 22 of the supply unit 20. The length of the hydrophilic treatment unit 40 provided on the arm 22 is set to, for example, a length that allows irradiation of the radial portion of the substrate 100. Furthermore, if the location of the substrate 100 that contains a hydrophobic material is known in advance, the position of the hydrophilic treatment unit 40 provided on the arm 22 may be set in advance so that the location is irradiated. If the hydrophilic treatment unit 40 is provided on the arm 22, the hydrophilic treatment unit 40 can move above the liquid film 102a. Note that an arm and an arm drive unit for moving the hydrophilic treatment unit 40 may be provided separately from the arm 22 and the arm drive unit 23.

[0043] Furthermore, the substrate 100 is rotated when the hydrophilic treatment is performed by the hydrophilic treatment unit 40. In this way, the hydrophilic treatment can be performed on almost the entire surface 100a of the substrate 100.

[0044] Therefore, the hydrophilic treatment unit 40 irradiates the surface 100a of the substrate 100 with ultraviolet light through a liquid film made of an etching liquid. In this way, it is possible to prevent particles contained in the atmosphere from adhering to the surface 100a of the substrate 100.

[0045] In this case, a portion of the ultraviolet light irradiated onto the liquid film made of the etching liquid is absorbed by the liquid film made of the etching liquid, thereby reducing the amount of ultraviolet light that reaches the surface 100a of the substrate 100. Reducing the thickness of the liquid film made of the etching liquid can increase the amount of ultraviolet light that reaches the surface 100a of the substrate 100. Therefore, when performing hydrophilization treatment by the hydrophilization treatment unit 40, the rotation speed of the substrate 100 can be increased to reduce the thickness of the liquid film made of the etching liquid. Note that, in order to prevent the liquid film made of the etching liquid from reducing the amount of ultraviolet light that reaches the surface 100a of the substrate 100, it is desirable to previously set the rotation speed of the substrate 100 so that the thickness of the liquid film of the etching liquid is a thickness that reduces the reduction in ultraviolet light.

[0046] The controller 50 includes, for example, a calculation unit such as a CPU (Central Processing Unit) and a storage unit such as a memory. The controller 50 is, for example, a computer. The controller 50 controls the operation of each element provided in the substrate processing apparatus 1 based on, for example, a control program stored in a storage unit.

[0047] For example, the controller 50 controls the hydrophilization unit 40 to perform the hydrophilization treatment simultaneously with the supply of the etching solution. Alternatively, the controller 50 may control the hydrophilization unit 40 to perform the hydrophilization treatment after a predetermined time has elapsed since the supply of the etching solution. Note that if the hydrophilization treatment is completed before the etching treatment, the surface of the hydrophilized hydrophobic material may be etched, exposing the hydrophobic portion (hydrophobic surface). Therefore, it is preferable to continue the hydrophilization treatment, i.e., UV irradiation, at least until the etching solution is replaced with a rinse solution. For example, the UV irradiation can be stopped when a predetermined time has elapsed since the rinse solution was supplied (when the rinse solution has been replaced).

[0048] Next, the operation of the substrate processing apparatus 1 and the substrate processing method according to this embodiment will be described. FIG. 3 is a flowchart illustrating the operation of the substrate processing apparatus 1. As shown in FIG. 3, first, the substrate 100 before processing is carried into the substrate processing apparatus 1 by a transport device (not shown) or the like (step St1). The substrate 100 that has been carried in is placed on a plurality of support pins 12a, and the substrate 100 is held by a plurality of holding pins 12b.

[0049] Next, the rotation driver 11c rotates the mounting portion 11a to rotate the substrate 100. (Step St2) The rotation speed of the substrate 100 is set to a value suitable for treatment with the etching solution 101. The rotation speed of the substrate 100 can be set to, for example, about 150 rpm to 300 rpm.

[0050] Next, the surface 100a of the substrate 100 is etched with the etching solution 101 (Step St3). For example, the processing liquid supply unit 24 supplies heated etching liquid 101 to a central region of the surface 100a of the substrate 100. The supplied etching liquid 101 spreads toward the periphery of the substrate 100 due to centrifugal force, and the surface 100a of the substrate 100 is etched by the heated etching liquid 101. The temperature of the etching liquid 101 is changed appropriately depending on the type of etching liquid 101, etc. For example, in the case of an etching liquid 101 containing hydrofluoric acid, acetic acid, and nitric acid, the etching liquid 101 is supplied at a temperature of about 80°C. For example, in the case of an etching liquid 101 containing phosphoric acid, the etching liquid 101 is supplied at a temperature of about 160°C.

[0051] Simultaneously with the supply of the etching solution, or after a predetermined time has elapsed since the etching solution was supplied, ultraviolet light is irradiated onto the surface 100a of the substrate 100 to perform a hydrophilic treatment (step St4). After a predetermined time has elapsed, the supply of the etching solution 101 is stopped.

[0052] For example, the etching liquid 101 is supplied to the surface 100a of the substrate 100 by the processing liquid supply unit 24, and at the same time, the hydrophilization processing unit 40 provided on the arm 22 irradiates the surface 100a of the substrate 100 with ultraviolet light. After a predetermined time has elapsed since the supply of the etching liquid 101 was started onto the surface 100a of the substrate 100, the supply of the etching liquid 101 is stopped. At the same time as the supply of the etching liquid 101 is stopped, the irradiation of ultraviolet light by the hydrophilic treatment unit 40 is also stopped. Note that the irradiation of ultraviolet light by the hydrophilic treatment unit 40 may be stopped after a predetermined time has elapsed since the supply of the etching liquid 101 was stopped and before the supply of the rinse liquid 102 is started.

[0053] Next, the surface 100a of the substrate 100 is cleaned with the rinse liquid 102 (Step St5). When the rinse liquid 102 is supplied to the surface 100a of the substrate 100, the etching liquid 101 that has piled up on the surface 100a of the substrate 100 in the previous processing step, i.e., the etching process, is replaced with the rinse liquid 102. Note that the supply of the rinse liquid 102 is started after the supply of the etching liquid 101 is stopped, but this is not limitative, and the rinse liquid 102 may be supplied before the supply of the etching liquid 101 is stopped. For example, the processing liquid supply unit 25 supplies the rinse liquid 102 to a central region of the surface 100a of the substrate 100. The supplied rinse liquid 102 spreads toward the periphery of the substrate 100 due to centrifugal force, and the surface 100a of the substrate 100 is cleaned with the rinse liquid 102. Furthermore, a liquid film 102a containing the rinse liquid 102 is formed on the surface 100a of the substrate 100. The rotation speed of the substrate 100 can be, for example, about 150 rpm to 300 rpm. After a predetermined time has elapsed since the irradiation of ultraviolet rays has stopped, the supply of the rinse liquid 102 is stopped. Note that the irradiation of ultraviolet rays by the hydrophilic treatment unit 40 may be stopped after a predetermined time has elapsed since the supply of the rinse liquid 102 began.

[0054] Next, the substrate 100 is dried (Step St6). The substrate 100 can be dried by, for example, spin drying. For example, the rotation speed of the substrate 100 is increased to discharge the rinsing liquid 102 puddled on the surface 100a of the substrate 100 by centrifugal force, and the airflow caused by the rotation dries the surface 100a of the substrate 100. The rotation speed of the substrate 100 can be, for example, about 1500 rpm.

[0055] Next, the processed substrate 100 is carried out to the outside of the substrate processing apparatus 1 (step St7). For example, the substrate 100 is lifted above the mounting portion 11a by a lift pin (not shown). Then, an arm of a transfer device (not shown) is inserted between the substrate 100 and the mounting portion 11a, and the substrate 100 is transferred from the mounting portion 11a to the transfer device. The transfer device then carries the transferred substrate 100 out of the substrate processing apparatus 1.

[0056] As described above, the substrate processing method according to the present embodiment can include the following steps. A step of supplying an etching solution 101 to a surface 100a of a rotating substrate 100 having a hydrophobic material. A step of subjecting the surface 100a of the rotating substrate 100 to hydrophilic treatment. Then, when the etching liquid 101 is supplied to the surface 100a of the substrate 100 in the step of supplying the etching liquid 101, the surface 100a of the substrate 100 is irradiated with ultraviolet light to perform the hydrophilic treatment in the step of performing the hydrophilic treatment.

[0057] In addition, in the step of carrying out the hydrophilic treatment, ultraviolet light can be irradiated onto the surface 100a of the substrate 100 while swinging horizontally above the rotating substrate 100.

[0058] The method further includes a step of supplying a rinse liquid 102 to the surface 100a of the rotating substrate 100. The step of performing the hydrophilic treatment continues until the supply of the etching liquid 101 in the step of supplying the etching liquid 101 is stopped and the supply of the rinse liquid 102 in the step of supplying the rinse liquid 102 is started.

[0059] Although the embodiments have been described above, the present invention is not limited to these descriptions. With respect to the above-described embodiments, those skilled in the art may add, delete, or modify components as appropriate, or add, omit, or change processes or conditions as appropriate, and these modifications are also within the scope of the present invention as long as they retain the characteristics of the present invention.

[0060] For example, the shape, size, material, arrangement, etc. of each element provided in the substrate processing apparatus 1 are not limited to those exemplified, and can be changed as appropriate. Furthermore, the elements of each of the above-described embodiments can be combined to the greatest extent possible, and such combinations are also included within the scope of the present invention as long as they include the features of the present invention. [Explanation of symbols]

[0061] 1 substrate processing apparatus, 10 spinning holder, 20 supply unit, 25 processing liquid supply unit, 26 processing liquid supply unit, 40 hydrophilic processing unit, 50 controller, 100 substrate, 100a surface, 102 rinse liquid, 103 protection liquid

Claims

1. a rotary holder capable of rotating a substrate having a hydrophobic material; a first processing liquid supply unit capable of supplying an etching liquid to the surface of the rotating substrate; a hydrophilic treatment section that performs hydrophilic treatment on the surface of the rotating substrate; a controller capable of controlling the spin holder, the first processing liquid supply unit, and the hydrophilization processing unit; Equipped with The controller supplying the etching liquid to the surface of the substrate by the first processing liquid supply unit to form a liquid film made of the etching liquid on the surface of the substrate; After a predetermined time has elapsed since the supply of the etching solution, a hydrophilic treatment is performed by irradiating the surface of the substrate with ultraviolet light by the hydrophilic treatment unit through a liquid film made of the etching solution supplied to the surface of the substrate; The substrate processing apparatus controls the rotation holder to increase the rotation speed of the substrate when the hydrophilic treatment is performed so that the thickness of the liquid film becomes thinner than before the hydrophilic treatment.

2. the hydrophilic treatment unit is provided, and the hydrophilic treatment unit further includes an arm that can rotate horizontally above the substrate; 2. The substrate processing apparatus according to claim 1, wherein the controller causes the hydrophilic treatment section to irradiate the ultraviolet light toward the surface of the substrate while swinging the arm.

3. the first processing liquid supply unit supplies the etching liquid to the substrate through a nozzle; 3. The substrate processing apparatus according to claim 2, wherein the nozzle is held by the arm on which the hydrophilic treatment section is provided.

4. a second processing liquid supply unit capable of supplying a rinse liquid to the surface of the rotating substrate; 4. The substrate processing apparatus according to claim 1, wherein the controller continues the hydrophilization processing by the hydrophilization processing unit until the first processing liquid supply unit stops supplying the etching liquid and the second processing liquid supply unit starts supplying the rinse liquid.

5. supplying an etching solution to a rotating surface of a substrate having a hydrophobic material; a step of subjecting the surface of the rotating substrate to hydrophilic treatment after a predetermined time has elapsed since the supply of the etching solution; Equipped with In the step of supplying the etching liquid, the etching liquid is supplied onto the surface of the substrate to form a liquid film made of the etching liquid on the surface of the substrate; In the step of performing the hydrophilic treatment, the surface of the substrate is subjected to the hydrophilic treatment by irradiating the surface of the substrate with ultraviolet light through a liquid film made of the etching liquid supplied to the surface of the substrate, and the rotation speed of the substrate is increased so that the thickness of the liquid film becomes thinner than before the hydrophilic treatment is performed.

6. 6. The substrate processing method according to claim 5, wherein in the step of performing the hydrophilic treatment, the ultraviolet light is irradiated onto the surface of the substrate while a device is oscillated horizontally above the rotating substrate.

7. The method further comprises the step of supplying a rinse liquid to the surface of the rotating substrate, 7. The substrate processing method according to claim 5, wherein the hydrophilization process is continued until the supply of the etching liquid in the etching liquid supplying process is stopped and the supply of the rinse liquid in the rinse liquid supplying process is started.

Images