Sensors and electronic devices containing the sensors

Abstract

To provide sensors configured to exhibit improved performance without increasing the size or number of sensors, and electronic devices including the sensors.SOLUTION: A sensor comprises: a visible light sensor 100 configured to sense light in the visible light region; a near-infrared light sensor 200 stacked on the visible light sensor and configured to sense a part of light within the near-infrared region; and an optical filter 300 arranged atop the near-infrared light sensor, the optical filter configured to selectively transmit the light in the visible light region and the part of light within the near-infrared region.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to sensors and electronic devices, and more particularly to a sensor and an electronic device including the sensor that can improve performance without increasing the size or number of sensors. [Background technology]

[0002] 2. Description of the Related Art Digital cameras and camcorders use image sensors that capture images and store them as electrical signals. The image sensor includes a sensor that separates incident light into wavelengths and converts each component into an electrical signal.

[0003] In recent years, research has been conducted into near-infrared sensors to improve the sensitivity of sensors in low-light environments or to use them as biometric recognition or authentication devices, and their development and performance improvement have become challenges. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-32983 Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention has been made in consideration of the above-mentioned problems with conventional near-infrared region sensors, and an object of the present invention is to provide a sensor that can improve performance without increasing the size or number of sensors. Another object of the present invention is to provide an electronic device including the above sensor. [Means for solving the problem]

[0006] In order to achieve the above object, a sensor according to the present invention includes a visible light sensor that senses light in the visible light region, a near-infrared light sensor that is disposed above the visible light sensor and senses a portion of light in the near-infrared region, and an optical filter that is disposed above the near-infrared light sensor and selectively transmits light in the visible light region and a portion of light in the near-infrared region, wherein the visible light sensor, the near-infrared light sensor, and the optical filter are sequentially stacked one on top of the other, and the optical filter selectively transmits light in a first wavelength region belonging to the visible light region and a second wavelength region belonging to the near-infrared region, and and blocks light in a third wavelength region falling between these two wavelength regions, the first wavelength region being between 400 nm and 700 nm, and the second wavelength region being between 750 nm and 1,000 nm, the transmission spectrum of the optical filter having a near-infrared transmission peak in the second wavelength region, with a transmittance of 50% and a width of the near-infrared transmission peak being 120 nm or less, the near-infrared transmission peak satisfying the following mathematical formulas 1 and 2, the near-infrared light sensor comprising a pair of electrodes facing each other and a near-infrared absorbing layer positioned between the pair of electrodes and absorbing a portion of light in the near-infrared region, the near-infrared absorbing layer comprising an organic light-absorbing material absorbing a portion of light in the near-infrared region, The organic light-absorbing material is a material represented by the following chemical formula A or chemical formula B: The sensor is characterized in that the second wavelength range is narrower than the absorption range of the organic light-absorbing material. (Number 1) λ2-λ1≦50 nm Formula 1 (Number 2) λ4-λ3≦50 nm Formula 2 (Here, in Formula 1 and Formula 2, λ1 is the start wavelength of the near-infrared transmission peak, λ2 is the start wavelength showing a transmittance of 50% or more at the near-infrared transmission peak, λ3 is the end wavelength showing a transmittance of 50% or more at the near-infrared transmission peak, and λ4 is the end wavelength of the near-infrared transmission peak.) [ka] [ka]

[0007] before The width of the second wavelength region is preferably 120 nm or less. The second wavelength range is preferably 760 nm to 860 nm, 800 nm to 900 nm, or 890 nm to 990 nm. stomach. before The transmission spectrum of the optical filter preferably has a transmittance of 70% and 30%, and the width of the near-infrared transmission peak is preferably 120 nm or less. stomach.

[0008] The maximum transmittance of the near-infrared transmission peak is preferably 90% or more. The third wavelength range preferably ranges from more than 700 nm to 900 nm. 。 before The half-width of the absorption spectrum of the organic light-absorbing material is preferably greater than 120 nm. The visible light sensor includes a blue sensor that senses light in a blue wavelength region, a green sensor that senses light in a green wavelength region, and a red sensor that senses light in a red wavelength region, and it is preferable that the blue sensor, the green sensor, and the red sensor are integrated on a semiconductor substrate. The visible light sensor includes a blue sensor that senses light in the blue wavelength region, a green sensor that senses light in the green wavelength region, and a red sensor that senses light in the red wavelength region, and it is preferable that two of the blue sensor, the green sensor, and the red sensor are photodiodes integrated on a semiconductor substrate, and the other of the blue sensor, the green sensor, and the red sensor is a photoelectric conversion element disposed on top of the semiconductor substrate. The photoelectric conversion element preferably includes a pair of electrodes facing each other and a visible light absorption layer located between the pair of electrodes and absorbing any one of blue, green, and red wavelength regions. It is preferable that the display device further comprises a color filter layer.

[0011] In order to achieve the above object, an electronic device according to the present invention is characterized by including the sensor according to the present invention. [Effects of the Invention]

[0012] The sensor and electronic device including the sensor according to the present invention can perform the function of a composite sensor by including two sensors that perform separate functions. In addition, by stacking two sensors that perform separate functions in each pixel, the number of pixels that can perform the function of each sensor can be doubled while maintaining the same size, thereby significantly improving sensitivity. The sensor also provides better color images by increasing the purity of the visible light that reaches the visible light sensor. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 2 is a schematic plan view showing an example of a pixel array of a sensor according to an embodiment of the present invention. [Figure 2] FIG. 2 is a schematic perspective view showing an example of a unit pixel group of the sensor of FIG. [Figure 3] 4 is a graph showing an example of a transmission spectrum of an optical filter of a sensor according to an embodiment of the present invention. [Figure 4] 1 is a graph of optical spectra showing optical characteristics of an optical filter, a near-infrared light sensor, and a visible light sensor of a sensor according to an embodiment of the present invention. [Figure 5] 1 is a cross-sectional view showing a schematic configuration of an example of a sensor according to an embodiment of the present invention. [Figure 6] FIG. 10 is a cross-sectional view showing a schematic configuration of another example of a sensor according to an embodiment of the present invention. [Figure 7] FIG. 10 is a cross-sectional view showing a schematic configuration of still another example of a sensor according to an embodiment of the present invention. [Figure 8] FIG. 10 is a cross-sectional view showing a schematic configuration of still another example of a sensor according to an embodiment of the present invention. [Figure 9] FIG. 10 is a perspective view schematically illustrating a sensor according to another embodiment of the present invention. [Figure 10] FIG. 10 is a cross-sectional view showing a schematic configuration of the sensor of FIG. [Figure 11] FIG. 10 is a perspective view schematically illustrating a sensor according to yet another embodiment of the present invention. [Figure 12] FIG. 12 is a cross-sectional view showing a schematic configuration of the sensor of FIG. [Figure 13] 1 is a block diagram showing a schematic configuration of an electronic device according to an embodiment of the present invention; [Figure 14] 1 shows the transmission spectra of the optical filter and near-infrared light sensor of the sensor according to Example 1. [Figure 15] 1 is a graph showing the external quantum efficiency as a function of wavelength of the visible light sensor of the sensor according to Example 1. [Figure 16] 10 is a graph showing the external quantum efficiency of the visible light sensor of the sensor according to Comparative Example 1 as a function of wavelength. [Figure 17] 1 shows transmission spectra of the optical filters and near-infrared light sensors of the sensors according to Examples 2 to 4. [Figure 18] 10 is a graph showing the external quantum efficiency as a function of wavelength of the visible light sensor of the sensor according to Example 2. [Figure 19] 10 is a graph showing the external quantum efficiency as a function of wavelength of the visible light sensor of the sensor according to Comparative Example 2. DETAILED DESCRIPTION OF THE INVENTION

[0014] Next, specific examples of embodiments for implementing a sensor according to the present invention and an electronic device including the sensor will be described with reference to the drawings.

[0015] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described in detail with reference to exemplary embodiments thereof, so that those skilled in the art can easily practice the present invention. However, as the present invention may be embodied in many different forms, it is not limited to the embodiments set forth herein. In the drawings, the thickness of layers and regions is exaggerated for clarity. Like reference numerals refer to like parts throughout the specification. When a layer, film, region, plate, or other part is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when one part is said to be "directly above" another part, it means that there are no other parts in between. A sensor according to an embodiment of the present invention will now be described.

[0016] FIG. 1 is a schematic plan view showing an example of a pixel array of a sensor according to an embodiment of the present invention, and FIG. 2 is a schematic perspective view showing an example of a unit pixel group of the sensor of FIG. Referring to FIG. 1, a sensor 400 according to one embodiment of the present invention includes a plurality of pixels PX, which are arranged in a matrix array repetitively along rows and columns. A plurality of pixels PX can form a unit pixel group A consisting of, for example, "2x2". However, the pixel arrangement is not limited to this and can be variously modified. The unit pixel group A can be variously modified to be "3x3" or "4x4" in addition to "2x2".

[0017] At least some of the pixels may include multiple sensors with different functions within one pixel, and the multiple sensors may be stacked. For example, each pixel PX may include a sensor that senses light in a different wavelength range, and the sensors that sense light in different wavelength ranges may be stacked. Here, the lights in different wavelength regions may be selected from a visible light wavelength region, an infrared wavelength region including a near-infrared wavelength region, and an ultraviolet wavelength region.

[0018] Referring to FIG. 2, a sensor 400 according to an embodiment of the present invention includes a sensor 100 that detects light in the visible light range (hereinafter referred to as a 'visible light sensor'), a sensor 200 that detects light in the near-infrared range (hereinafter referred to as a 'near-infrared light sensor'), and an optical filter 300. The visible light sensor 100 and the near-infrared light sensor 200 are stacked on top of each other, for example, the near-infrared light sensor 200 is disposed on top of the visible light sensor 100 . The visible light sensor 100 and the near-infrared light sensor 200 each independently include a light-sensing element such as a photodiode or a photoelectric device.

[0019] The visible light sensor 100 is a sensor that senses at least a part of light in the visible light wavelength range of 400 nm to 700 nm. The visible light sensor 100 may be, for example, an image sensor that separates incident light into light in a blue wavelength region, a green wavelength region, and a red wavelength region, and converts each of these into a signal to realize a color image. As an example, the unit pixel group A of the visible light sensor 100 may include a blue pixel (B) that senses light in the blue wavelength region, a green pixel (G) that senses light in the green wavelength region, and a red pixel (R) that senses light in the red wavelength region, and may include, for example, two green pixels (G). For example, the blue wavelength region, the green wavelength region, and the red wavelength region may be 400 nm or more and less than 500 nm, 500 nm to 600 nm, and more than 600 nm and 700 nm or less, respectively. The visible light sensor 100 may be a structure integrated into a semiconductor substrate such as a silicon substrate, a structure stacked on a semiconductor substrate, or a combination thereof.

[0020] The near-infrared light sensor 200 is a sensor that senses a portion of light in the near-infrared wavelength region, and for example, selectively absorbs a portion of light in the near-infrared wavelength region and converts it into a signal. The near-infrared wavelength region may be, for example, more than 700 nm and not more than 3,000 nm, and within the above range, may be, for example, 750 nm to 3,000 nm, 750 nm to 1,500 nm, 750 nm to 1,100 nm, 750 nm to 1,000 nm, 760 nm to 1,000 nm, 800 nm to 1,000 nm, 760 nm to 860 nm, 800 nm to 900 nm, 850 nm to 990 nm, 870 nm to 990 nm, or 890 nm to 990 nm. The near-infrared light sensor 200 may include a near-infrared absorbing layer that selectively absorbs a portion of light in the near-infrared wavelength range, and may include, for example, a pair of electrodes facing each other and a near-infrared absorbing layer disposed between the pair of electrodes.

[0021] As an example, the near-infrared absorbing layer includes an organic light-absorbing material that absorbs a portion of the near-infrared wavelength range. The absorption characteristics of the near-infrared light sensor 200 are expressed by the absorption spectrum (transmission spectrum) of the near-infrared absorption layer, and for example, the absorption spectrum (transmission spectrum) of the near-infrared absorption layer may have a maximum absorption wavelength (minimum transmission wavelength) at 750 nm to 1,000 nm, 780 nm to 980 nm, or 800 nm to 950 nm. The half-width of the absorption spectrum (transmission spectrum) of the near-infrared absorbing layer is greater than 120 nm, and can be, for example, 150 nm or more, 180 nm or more, or 200 nm or more.

[0022] The near-infrared light sensor 200 may be, for example, a biometric sensor, such as an iris sensor, a distance sensor, a fingerprint sensor, or a vascularity sensor. Among these, an iris sensor is a sensor that identifies an individual using the characteristics of the iris, which are different for each individual. It photographs the user's eyes through the sensor within an appropriate distance from the user, processes the photographed image, and compares it with pre-stored images to perform iris recognition.

[0023] A depth sensor is a sensor that determines the shape and position of a 3D object from its information. It photographs an object through the sensor within an appropriate distance from the user, and processes the photographed image to confirm the shape and position of the object. Such a distance sensor can be used, for example, as a face recognition sensor. As an example, the unit pixel group A of the near-infrared light sensor 200 may include a plurality of near-infrared light pixels (IR) that sense light in the near-infrared wavelength region, and the plurality of near-infrared light pixels (IR) may be the same or different from each other.

[0024] The optical filter 300 is disposed on the front side (light incident surface) of the sensor 400, for example, on top of the near-infrared light sensor 200. The optical filter 300 selectively transmits light in a first wavelength region that includes wavelengths sensed by the visible light sensor 100 within the visible light wavelength region, and light in a second wavelength region that includes wavelengths sensed by the near-infrared light sensor 200 within the near-infrared wavelength region, and blocks other light by reflection or absorption. The light that is blocked by reflection or absorption includes a third wavelength range that is between the first wavelength range and the second wavelength range.

[0025] For example, the first wavelength region may belong to 400 nm to 700 nm, and the second wavelength region may belong to, for example, more than 700 nm to 3,000 nm, 750 nm to 3,000 nm, 750 nm to 1,500 nm, 750 nm to 1,100 nm, 750 nm to 1,000 nm, 760 nm to 1,000 nm, 800 nm to 1,000 nm, 760 nm to 860 nm, 800 nm to 900 nm, 850 nm to 990 nm, 870 nm to 990 nm, or 890 nm to 990 nm. The width of the second wavelength region can be, for example, 150 nm or less, 120 nm or less, or 100 nm or less, for example, 50 nm to 150 nm, 50 nm to 120 nm, or 50 nm to 100 nm.

[0026] For example, the first wavelength region can be 400 nm to 700 nm, and the second wavelength region can be a region within the range of 750 nm to 1,000 nm that has a width of 150 nm or less, 120 nm or less, or 100 nm or less. The second wavelength region can be, for example, 760 nm to 860 nm, 800 nm to 900 nm, or 890 nm to 990 nm. For example, the third wavelength region may be greater than 700 nm and less than or equal to 1,000 nm, for example, greater than 700 nm and less than or equal to 900 nm. The optical characteristics of the optical filter 300 are expressed by a transmission spectrum. For example, the transmission spectrum of the optical filter 300 exhibits high transmittance in the first and second wavelength regions and low transmittance in the third wavelength region.

[0027] FIG. 3 is a graph showing an example of the transmission spectrum of an optical filter of a sensor according to an embodiment of the present invention. Referring to FIG. 3, the transmission spectrum of the optical filter 300 shows high transmittance in the first wavelength region B1 and the second wavelength region B2, and low transmittance in the third wavelength region B3 located between the first wavelength region B1 and the second wavelength region B2.

[0028] As an example, the transmission spectrum of the optical filter 300 has a visible light transmission peak P1 in a first wavelength region B1 and a near-infrared light transmission peak P2 in a second wavelength region B2. The visible light transmission peak P1 exhibits a substantially uniform transmittance across the first wavelength region B1, and the maximum transmittance of the visible light transmission peak P1 may be, for example, 85% or more, 88% or more, 90% or more, 92% or more, 93% or more, 95% or more, 97% or more, 98% or more, or 99% or more. The near-infrared transmission peak P2 exhibits a substantially uniform transmittance across the second wavelength region B2, and the maximum transmittance of the near-infrared transmission peak P2 may be, for example, 85% or more, 88% or more, 90% or more, 92% or more, 93% or more, 95% or more, 97% or more, 98% or more, or 99% or more.

[0029] The near-infrared transmission peak P2 has a steep slope, and exhibits, for example, a spectral profile that is substantially a step function. The width of the near-infrared transmission peak P2 does not vary significantly depending on the transmittance; for example, the widths (w30, w50, w70) of the near-infrared transmission peak P2 at 30%, 50%, and 70% transmittance in the transmission spectrum of the optical filter 300 do not vary significantly; for example, the difference in the widths (w30, w50, w70) of the near-infrared transmission peak P2 at 30%, 50%, and 70% transmittance may be 50 nm or less, 40 nm or less, 30 nm or less, 20 nm or less, or 10 nm or less.

[0030] As an example, the near-infrared transmission peak P2 may satisfy the following formulas 1 and 2. (Number 1) λ2-λ1≦50 nm Formula 1 (Number 2) λ4-λ3≦50 nm Formula 2 (In the above formulas 1 and 2, λ1 is the start wavelength at the near-infrared transmission peak P2, λ2 is the start wavelength at which the near-infrared transmission peak P2 exhibits a transmittance of 50% or more, λ3 is the end wavelength at which the near-infrared transmission peak P2 exhibits a transmittance of 50% or more, and λ4 is the end wavelength at the near-infrared transmission peak P2.)

[0031] Furthermore, as an example, the near-infrared transmission peak P2 may satisfy the following formula 1a and formula 2a. (Math 1a) λ2-λ1≦40 nm Formula 1a (Number 2a) λ4-λ3≦40 nm Formula 2a

[0032] Furthermore, as an example, the near-infrared transmission peak P2 may satisfy the following formula 1aa and formula 2aa. (Math 1aa) λ2-λ1≦30 nm Formula 1aa (Math 2aa) λ4-λ3≦30 nm Formula 2aa

[0033] As described above, the visible light sensor 100 includes the optical filter 300, which can effectively block light in the near-infrared wavelength region, i.e., the third wavelength region, which is adjacent to the visible light wavelength region, thereby effectively preventing or reducing damage to the color image of the visible light sensor 100 caused by light in the near-infrared wavelength region.

[0034] FIG. 4 is a graph of optical spectra showing the optical characteristics of an optical filter, a near-infrared light sensor, and a visible light sensor of a sensor according to an embodiment of the present invention. Referring to FIG. 4, the optical filter 300 disposed on the front surface (e.g., incident light side 401) selectively transmits light in a first wavelength region B1 (e.g., light 290b) and light in a second wavelength region B2 (e.g., light 290a) of the incident light 290, and near-infrared light in the second wavelength region B2 (e.g., light 290a) of the transmitted light is selectively absorbed and photoelectrically converted by the near-infrared light sensor 200 to function as a sensor, and the light in the first wavelength region B1 (e.g., light 290b) that passes through the near-infrared light sensor 200 is detected by the visible light sensor 100 to function as an image sensor.

[0035] If the optical filter 300 were not present, light in the near-infrared wavelength region of the incident light would be absorbed by the near-infrared light sensor 200. However, the light-absorbing material actually contained in the near-infrared light sensor 200 exhibits a Gaussian spectral profile that is different from the step function spectral profile of the optical filter 300, and therefore there is a limit to completely blocking the near-infrared wavelength region located adjacent to the visible light wavelength region. As a result, light in wavelength regions (B2', B2'') adjacent to the second wavelength region B2 inevitably flows into the visible light sensor 100, which may damage the color image of the visible light sensor 100.

[0036] The optical filter 300 exhibits transmission characteristics such as a step function spectral profile as described above, thereby blocking light in the near-infrared wavelength range that inevitably flows into the visible light sensor 100, thereby increasing the purity of light reaching the visible light sensor 100. For example, the width w50 of the near-infrared transmission peak P2 at 50% transmittance of the optical filter 300 is narrower than the width v50 of the near-infrared absorption peak at 50% absorptance (50% transmittance) of the near-infrared light sensor 200, thereby allowing the optical filter 300 to pre-block light in wavelength regions (B2', B2'') adjacent to the second wavelength region B2 and prevent it from entering the visible light sensor 100. As a result, in a sensor having a stacked structure of the near-infrared light sensor 200 and the visible light sensor 100, the visible light sensor 100 reduces the influence of the near-infrared light sensor 200 using the optical filter 300, thereby achieving a good color image.

[0037] Therefore, by including two sensors that perform separate functions, sensor 400 can not only perform the function of a composite sensor, but also by stacking two sensors that perform separate functions in each pixel, the number of pixels that can perform the function of each sensor can be doubled while maintaining the same size, thereby significantly improving sensitivity. Additionally, the sensor 400 can achieve a good color image by increasing the purity of the visible light reaching the visible light sensor 100 .

[0038] FIG. 5 is a cross-sectional view showing a schematic configuration of an example of a sensor according to an embodiment of the present invention. Referring to FIG. 5, a sensor 400 according to an embodiment of the present invention includes a visible light sensor 100, a near-infrared light sensor 200, and an optical filter 300. The visible light sensor 100 is a photodiode integrated on a semiconductor substrate 110, and the near-infrared light sensor 200 is a photoelectric conversion element that absorbs near-infrared light and performs photoelectric conversion.

[0039] The visible light sensor 100 is integrated in a semiconductor substrate 110 and includes a blue sensor 100a that senses light in the blue wavelength region, a green sensor 100b that senses light in the green wavelength region, and a red sensor 100c that senses light in the red wavelength region. Blue sensors 100a are integrated into blue pixels, green sensors 100b are integrated into green pixels, and red sensors 100c are integrated into red pixels.

[0040] The semiconductor substrate 110 is, for example, a silicon substrate, and includes the visible light sensor 100, the charge reservoir 130, and a transfer transistor (not shown) integrated thereon. The visible light sensor 100 senses light in the visible wavelength range that has passed through the optical filter 300, the near-infrared light sensor 200, and the color filter layer 70, and the sensed information is transmitted by the transmission transistor. The charge reservoir 130 is electrically connected to the near-infrared light sensor 200 .

[0041] Metal wiring (not shown) and pads (not shown) are formed on the semiconductor substrate 110. The metal wiring and pads are made of a metal having low resistivity to reduce signal delay, such as, but not limited to, aluminum (Al), copper (Cu), silver (Ag), or alloys thereof. However, the present invention is not limited to the above structure, and the metal wiring and pads may be disposed under the blue sensor 100a, the green sensor 100b, and the red sensor 100c.

[0042] A lower insulating layer 60 is formed on the semiconductor substrate 110 . The lower insulating layer 60 is made of inorganic insulating materials such as silicon oxide and / or silicon nitride, or low dielectric constant (low K) materials such as SiC, SiCOH, SiCO, and SiOF.

[0043] A color filter layer 70 is formed on the lower insulating layer 60 . The color filter layer 70 includes a blue filter 70a that selectively transmits light in the blue wavelength region, a green filter 70b that selectively transmits light in the green wavelength region, and a red filter 70c that selectively transmits light in the red wavelength region. The blue filter 70a, the green filter 70b, and the red filter 70c are arranged so as to overlap the blue sensor 100a, the green sensor 100b, and the blue sensor 100c, respectively.

[0044] The blue filter 70a selectively transmits light in the blue wavelength region and transmits it to the blue sensor 100a, the green filter 70b selectively transmits light in the green wavelength region and transmits it to the green sensor 100b, and the red filter 70c selectively transmits light in the red wavelength region and transmits it to the red sensor 100c. However, without being limited thereto, at least one of the blue filter 70a, the green filter 70b, and the red filter 70c may be replaced with a yellow filter, a cyan filter, or a magenta filter. Here, the color filter layer 70 is disposed between the visible light sensor 100 and the near-infrared light sensor 200, but is not limited thereto and may be disposed above the near-infrared light sensor 200.

[0045] An upper insulating layer 80 is formed on the color filter layer 70 . The top insulating layer 80 can be, for example, a planarizing layer. The lower insulating layer 60 and the upper insulating layer 80 have a trench 85 exposing the charge reservoir 130 . The trench 85 is filled with a filling material. At least one of the lower insulating layer 60 and the upper insulating layer 80 may be omitted.

[0046] A near-infrared light sensor 200 is disposed on the upper insulating layer 80 . The near-infrared light sensor 200 includes a lower electrode 210 and an upper electrode 220 facing each other, and a near-infrared absorbing layer 230 located between the lower electrode 210 and the upper electrode 220 . Either the lower electrode 210 or the upper electrode 220 is an anode, and the other is a cathode. The lower electrode 210 and the upper electrode 220 may all be transparent electrodes. The transparent electrodes may be made of a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a thin metal film formed to a thickness of several nanometers to several tens of nanometers, or a single-layer or multi-layer thin metal film doped with metal oxide and formed to a thickness of several nanometers to several tens of nanometers.

[0047] The near-infrared absorbing layer 230 selectively absorbs light in the near-infrared wavelength region. The absorption spectrum of the near-infrared absorbing layer 230 is, for example, max ), for example, λ max ±100 nm, e.g., λ max ±90 nm, e.g., λ max ±80 nm, e.g., λ max ±70 nm, or for example, λ max It may be in the range of ±65 nm, but is not limited to this. λ max may be, for example, 750 nm to 1,000 nm, and within the above range, may be, for example, 780 nm to 980 nm or 800 nm to 950 nm. The half width of the absorption spectrum of the near-infrared absorbing layer 230 exceeds 120 nm, and can be, for example, 150 nm or more, 180 nm or more, 200 nm or more, more than 120 nm and 300 nm or less, 150 nm to 300 nm, 180 nm to 300 nm, or 200 nm to 300 nm.

[0048] The maximum absorption wavelength (λ max) may be 50% or more, 60% or more within the above range, 70% or more within the above range, 75% or more within the above range, 80% or more within the above range, 85% or more within the above range, 88% or more within the above range, 90% or more within the above range, 92% or more within the above range, 95% or more within the above range, 97% or more within the above range, 98% or more within the above range, 99% or more within the above range, 99.5% or more within the above range, 99.9% or more within the above range, or 100% within the above range.

[0049] The near-infrared absorbing layer 230 includes a p-type semiconductor and an n-type semiconductor, and the p-type semiconductor and the n-type semiconductor form a pn junction. At least one of the p-type and n-type semiconductors has a maximum absorption wavelength (λ max ) may be a light-absorbing material that selectively absorbs infrared light in a predetermined range including The p-type and n-type semiconductors can each independently comprise organic, inorganic, and / or organic-inorganic materials. At least one of the p-type and n-type semiconductors has a maximum absorption wavelength (λ max The material may include an organic material that selectively absorbs infrared light in a predetermined range, such as a crystalline silicon (SiC), a semiconductor nanocrystal such as a quantum dot, or a combination thereof.

[0050] By way of example, at least one of the p-type semiconductor and the n-type semiconductor may include, but is not limited to, quantum dots, quinoid metal complex compounds, polymethine compounds, cyanine compounds, phthalocyanine compounds, merocyanine compounds, naphthalocyanine compounds, immonium compounds, diimmonium compounds, triarylmethane compounds, dipyrromethene compounds, anthraquinone compounds, naphthoquinones, diquinone compounds, naphthoquinone compounds, anthraquinone compounds, squarylium compounds, rylene compounds, parylene compounds, squaraine compounds, pyrylium compounds, thiopyrylium compounds, diketopyrrolopyrrole compounds, borondipyrromethene compounds, nickel-dithiol complex compounds, croconium compounds, derivatives thereof, or combinations thereof. By way of example, the p-type semiconductor may include the compounds described above, and the n-type semiconductor may be, for example, but not limited to, a fullerene such as C60, C70, a non-fullerene, a thiophene, a derivative thereof, or a combination thereof.

[0051] The near-infrared absorbing layer 230 may be a single layer or multiple layers. The near-infrared absorbing layer 230 may be various combinations such as an intrinsic layer (I layer), a p-type layer / I layer, an I layer / n-type layer, a p-type layer / I layer / n-type layer, or a p-type layer / n-type layer. The intrinsic layer (I layer) may contain a mixture of p-type and n-type semiconductors at a volume ratio of about 1:100 to about 100:1. It may be contained at a volume ratio of about 1:50 to 50:1 within the above range, or at a volume ratio of about 1:10 to 10:1 within the above range, or at a volume ratio of about 1:1 within the above range. The composition ratio of the p-type semiconductor and the n-type semiconductor within the above range is advantageous for efficient exciton generation and pn junction formation. The p-type layer includes a p-type semiconductor, and the n-type layer includes an n-type semiconductor.

[0052] The near-infrared absorbing layer 230 can have a thickness of 1 nm to 500 nm. Within the above range, the thickness may be, for example, about 5 nm to 300 nm, and may be, for example, about 5 nm to 200 nm. The near-infrared absorbing layer 230 is formed on the entire upper surface of the sensor 400 . As a result, the maximum absorption wavelength (λ max ), and can selectively absorb infrared light in a predetermined region including the surface area, thereby increasing the light absorption area and providing high light absorption efficiency.

[0053] The near-infrared absorbing layer 230 has a maximum absorption wavelength (λ max ), infrared light in a predetermined region including the upper electrode 220 is selectively absorbed to generate excitons, and the generated excitons are then separated into holes and electrons. The separated holes move to the anode side of one of the lower electrode 210 and the upper electrode 220, and the separated electrons move to the cathode side of the other of the lower electrode 210 and the upper electrode 220, thereby achieving a photoelectric conversion effect. The separated electrons and / or holes collect in the charge reservoir 130 . An auxiliary layer (not shown) may be further included between the lower electrode 210 and the near-infrared absorbing layer 230 and / or between the upper electrode 220 and the near-infrared absorbing layer 230 . The auxiliary layer can be, but is not limited to, a charge auxiliary layer, a light absorbing auxiliary layer, or a combination thereof.

[0054] The auxiliary layer may include at least one selected from, for example, a hole injecting layer (HIL) that facilitates hole injection, a hole transporting layer (HTL) that facilitates hole transport, an electron blocking layer (EBL) that blocks electron migration, an electron injecting layer (EIL) that facilitates electron injection, an electron transporting layer (ETL) that facilitates electron transport, and a hole blocking layer (HBL) that blocks hole migration. The auxiliary layer can comprise, for example, an organic material, an inorganic material, or an organic-inorganic material. The organic material may be an organic compound having hole or electronic properties, and the inorganic material may be a metal oxide such as, but not limited to, molybdenum oxide, tungsten oxide, or nickel oxide.

[0055] The optical filter 300 is disposed above the visible light sensor 100 and the near-infrared light sensor 200 , and is disposed over the entire surface of the visible light sensor 100 and the near-infrared light sensor 200 . The specific description of the optical filter 300 is as described above. A condenser lens (not shown) may be further formed on the top or bottom of the optical filter 300 . A condenser lens can control the direction of incident light and focus it at one point. The focusing lens may be, for example, but not limited to, a cylindrical or hemispherical shape.

[0056] FIG. 6 is a cross-sectional view showing a schematic configuration of another example of a sensor according to an embodiment of the present invention. Referring to FIG. 6, a sensor 400 according to this embodiment includes the above-mentioned visible light sensor 100, near-infrared light sensor 200, and optical filter 300. However, in the sensor 400 according to this embodiment, the visible light sensor 100 is a combination of a photodiode integrated on the semiconductor substrate 110 and a photoelectric conversion element arranged on the semiconductor substrate 110, and the near-infrared light sensor 200 is a photoelectric conversion element. In this embodiment, the description overlapping with the above-described embodiment will be omitted, and the description of the same components will be the same as in the above-described embodiment.

[0057] A blue sensor 100a, a red sensor 100b, a charge reservoir 130, and a transfer transistor (not shown) are integrated on a semiconductor substrate 110. The blue sensor 100a and the red sensor 100b are photodiodes, and are arranged apart in the horizontal direction of the semiconductor substrate 110. Blue sensors 100a are integrated into blue pixels, and red sensors 100b are integrated into red pixels. A lower insulating layer 60 and a color filter layer 70 are formed on the semiconductor substrate 110 . The color filter layer 70 includes a blue filter 70a overlapping the blue sensor 100a and a red filter 70c overlapping the red sensor 100c.

[0058] An intermediate insulating layer 65 is formed on the color filter layer 70 . The lower insulating layer 60 and the intermediate insulating layer 65 have trenches 87 that expose the charge reservoirs 140 . The trench 87 is filled with a filling material. At least one of the lower insulating layer 60 and the middle insulating layer 65 may be omitted.

[0059] On top of the intermediate insulating layer 65, a green sensor 100b is formed. The green sensor 100b may be a photoelectric conversion element and is formed on the entire surface of the intermediate insulating layer 65. The green sensor 100b includes a lower electrode 101, an upper electrode 102 facing each other, and a green light absorbing layer 103 located between the lower electrode 101 and the upper electrode 102. One of the lower electrode 101 and the upper electrode 102 is an anode, and the other is a cathode. The lower electrode 101 and the upper electrode 102 may all be transparent electrodes, and the transparent electrodes may be made of a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a thin metal film formed to a thickness of several nanometers to several tens of nanometers, or a single-layer or multi-layer thin metal film doped with metal oxide and formed to a thickness of several nanometers to several tens of nanometers.

[0060] The green light absorbing layer 103 can selectively absorb light in the green wavelength region, and can transmit light in wavelength regions other than the green wavelength region, that is, light in the blue wavelength region and red wavelength region, as is. The green light absorbing layer 103 may include, for example, a p-type semiconductor and an n-type semiconductor, and the p-type semiconductor and the n-type semiconductor may form a pn junction. At least one of the p-type semiconductor and the n-type semiconductor selectively absorbs light in the green wavelength region, generating excitons by selectively absorbing the light in the green wavelength region, and then separating the generated excitons into holes and electrons to produce a photoelectric effect. The green light absorbing layer 103 can replace a green filter.

[0061] The p-type semiconductor and the n-type semiconductor each have an energy band gap of, for example, about 2.0 to 2.5 eV, and the p-type semiconductor and the n-type semiconductor may have a LUMO difference of, for example, about 0.2 to 0.7 eV. The green light absorbing layer 103 may be a single layer or multiple layers. The green light absorbing layer 103 may be various combinations such as an intrinsic layer (I layer), p-type layer / I layer, I layer / n-type layer, p-type layer / I layer / n-type layer, or p-type layer / n-type layer. The green light absorbing layer 103 is formed on the whole surface of the sensor 400 . This allows the entire upper surface of the sensor 400 to selectively absorb light in the green wavelength region, increasing the light area and providing high light absorption efficiency.

[0062] The green light absorption layer 103 selectively absorbs light in the green wavelength region to form excitons, and then separates the generated excitons into holes and electrons. The separated holes move to the anode side of one of the lower electrode 101 and the upper electrode 102, and the separated electrons move to the cathode side of the other of the lower electrode 101 and the upper electrode 102, thereby producing a photoelectric conversion effect. The separated electrons and / or holes collect in the charge reservoir 140 . An auxiliary layer (not shown) may be further included between the lower electrode 101 and the green light absorbing layer 103 and / or between the upper electrode 102 and the green light absorbing layer 103 . The auxiliary layer may be, but is not limited to, a charge auxiliary layer, a light absorption auxiliary layer, or a combination thereof.

[0063] Here, as an example, the case where the blue sensor 100a and the red sensor 100c are photodiodes and the green sensor 100b is a photoelectric conversion element has been described, but this is not limited to this. The blue sensor 100a and the green sensor 100b may be photodiodes and the red sensor 100c may be a photoelectric conversion element, or the green sensor 100b and the red sensor 100c may be photodiodes and the blue sensor 100a may be a photoelectric conversion element. An upper insulating layer 80 is formed on the green sensor 100b, and a near-infrared light sensor 200 and an optical filter 300 are disposed on the upper insulating layer 80. The near-infrared light sensor 200 and the optical filter 300 are as described above.

[0064] The sensor 400 according to this embodiment is a composite sensor comprising a stacked visible light sensor 100 and a near-infrared light sensor 200. The visible light sensor 100 also has a structure in which a photodiode and a photoelectric conversion element are stacked, which allows the sensor area to be further reduced, thereby enabling the sensor to be miniaturized.

[0065] FIG. 7 is a cross-sectional view showing a schematic configuration of still another example of a sensor according to an embodiment of the present invention. Referring to FIG. 7, a sensor 400 according to this embodiment includes a visible light sensor 100, a near-infrared light sensor 200, and an optical filter 300, similar to the above-described embodiments. The visible light sensor 100 includes a blue sensor 100a, a red sensor 100c, and a green sensor 100b integrated on a semiconductor substrate 110, where the blue sensor 100a and the red sensor 100c are photodiodes and the green sensor 100b is a photoelectric conversion element.

[0066] The near-infrared light sensor 200 may be a photoelectric conversion element. The green sensor 100b includes a lower electrode 101, a green light absorbing layer 103, and an upper electrode 102, and the near-infrared light sensor 200 includes a lower electrode 210, a near-infrared light absorbing layer 230, and an upper electrode 220. However, in the sensor 400 according to this embodiment, the blue sensor 100a and the red sensor 100c integrated on the semiconductor substrate 110 are stacked vertically. The blue sensor 100a and the red sensor 100c can selectively absorb and sense light in each wavelength range depending on the layer depth. That is, red sensor 100c, which absorbs red light in the long wavelength region, is located deeper from the surface of semiconductor substrate 110 than blue sensor 100a, which absorbs blue light in the short wavelength region. By separating the absorption wavelengths according to the layer depth in this way, the color filter layer 70 can be omitted.

[0067] Here, as an example, the case where the blue sensor 100a and the red sensor 100c are photodiodes and the green sensor 100b is a photoelectric conversion element has been described, but this is not limited to this. The blue sensor 100a and the green sensor 100b may be photodiodes and the red sensor 100c may be a photoelectric conversion element, or the green sensor 100b and the red sensor 100c may be photodiodes and the blue sensor 100a may be a photoelectric conversion element. The sensor 400 according to this embodiment is a composite sensor comprising a stacked visible light sensor 100 and a near-infrared light sensor 200. The visible light sensor 100 also comprises a stacked photodiode and a photoelectric conversion element, and the photodiode also has a stacked structure, which allows the sensor area to be further reduced, thereby enabling the sensor to be miniaturized. Furthermore, the sensor 400 according to this embodiment does not include a separate color filter layer, which simplifies the structure and manufacturing process.

[0068] FIG. 8 is a cross-sectional view showing a schematic configuration of still another example of a sensor according to an embodiment of the present invention. Referring to FIG. 8, the sensor 400 according to this embodiment includes a semiconductor substrate 110, a lower insulating layer 60 having a trench, a near-infrared optical sensor 200, and an optical filter 300. The semiconductor substrate 110 includes the blue, green, and red sensors (100a, 100b, 100c), a transfer transistor (not shown), and a charge reservoir 55. The near-infrared light sensor 200 is one of the near-infrared light sensors shown in FIGS.

[0069] In the sensor 400 according to this embodiment, the blue, green, and red sensors (100a, 100b, 100c) are stacked vertically, and the color filter layer 70 is omitted. The blue, green and red sensors (100a, 100b, 100c) are electrically connected to a charge reservoir (not shown). The blue, green, and red sensors (100a, 100b, and 100c) can selectively absorb light in different wavelength regions depending on the layer depth. The rest of the structure is as described above.

[0070] FIG. 9 is a perspective view schematically showing a sensor according to another embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a schematic configuration of the sensor of FIG. 9 and 10, the sensor 400 includes a semiconductor substrate 110, a photoelectric conversion element 990 disposed on the semiconductor substrate 110, and an optical filter 300. Semiconductor substrate 110 includes a transfer transistor (not shown) and a charge reservoir 55 . The photoelectric conversion element 990 includes a plurality of photoelectric conversion elements (990a, 990b, 990c, 990d), and the plurality of photoelectric conversion elements (990a, 990b, 990c, 990d) absorb light in different wavelength ranges selected from blue light, green light, red light, and near-infrared light and convert it into an electrical signal. The plurality of photoelectric conversion elements (990a, 990b, 990c, 990d) are each electrically connected to a respective charge reservoir 55 through a respective trench 85. The optical filter 300 is laminated on the photoelectric conversion element 990 .

[0071] FIG. 11 is a perspective view schematically showing a sensor according to still another embodiment of the present invention, and FIG. 12 is a cross-sectional view showing a schematic configuration of the sensor of FIG. 11 and 12, a sensor 400 according to this embodiment includes an optical filter 300 and first to fourth photoelectric conversion elements (1200a to 1200d).

[0072] The first to fourth photoelectric conversion elements (1200a to 1200d) include a near-infrared photoelectric conversion element that selectively absorbs light in the near-infrared wavelength region, a blue photoelectric conversion element that selectively absorbs light in the blue wavelength region, a green photoelectric conversion element that selectively absorbs light in the green wavelength region, and a red photoelectric conversion element that selectively absorbs light in the red wavelength region, which are stacked on top of each other. Semiconductor substrate 110 includes a transfer transistor (not shown) and a charge reservoir 55 . Insulating layers (80a to 80d) are formed between the semiconductor substrate 110 and the first to fourth photoelectric conversion elements (1200a to 1200d), respectively.

[0073] The first photoelectric conversion element 1200a is disposed on the insulating layer 80a and includes a first photoelectric conversion layer 1230a. The first photoelectric conversion layer 1230a selectively absorbs light in any one of the near-infrared wavelength region, the blue wavelength region, the green wavelength region, and the red wavelength region, and converts it into an electrical signal. For example, the first photoelectric conversion element 1200a is a blue photoelectric conversion element.

[0074] The second photoelectric conversion element 1200b is disposed on the insulating layer 80b and includes a second photoelectric conversion layer 1230b. The second photoelectric conversion layer 1230b selectively absorbs light in any one of the near-infrared wavelength region, the blue wavelength region, the green wavelength region, and the red wavelength region, and converts it into an electrical signal. The wavelength region absorbed by the second photoelectric conversion layer 1230b is different from the wavelength region absorbed by the first photoelectric conversion layer 1230a.

[0075] The third photoelectric conversion element 1200c is disposed on the insulating layer 80c and includes a third photoelectric conversion layer 1230c. The third photoelectric conversion layer 1230c selectively absorbs light in any one of the near-infrared wavelength region, the blue wavelength region, the green wavelength region, and the red wavelength region, and converts it into an electrical signal. The wavelength region absorbed by the third photoelectric conversion layer 1230c is different from the wavelength region absorbed by the first photoelectric conversion layer 1230a and the second photoelectric conversion layer 1230b.

[0076] The fourth photoelectric conversion element 1200d is disposed on the insulating layer 80d and includes a fourth photoelectric conversion layer 1230d. The fourth photoelectric conversion layer 1230d selectively absorbs light in any one of the near-infrared wavelength region, the blue wavelength region, the green wavelength region, and the red wavelength region, and converts it into an electrical signal. The wavelength region absorbed by the fourth photoelectric conversion layer 1230d is different from the wavelength region absorbed by the first photoelectric conversion layer 1230a, the second photoelectric conversion layer 1230b, and the third photoelectric conversion layer 1230c. The optical filter 300 is disposed above the fourth photoelectric conversion element 1200d, and the specific description is as described above.

[0077] FIG. 13 is a block diagram showing a schematic configuration of an electronic device according to an embodiment of the present invention. Referring to FIG. 13, an electronic device 1300 includes a processor 1320, a memory 1330, an image sensor device 1340, and a display interface 1350 electrically connected via a bus.

[0078] The image sensor device 1340 is any one of the sensors according to the above-described embodiments. The memory 1330, which is a non-transitory computer-readable medium, stores a program of instructions. The processor 1320 executes stored programs of instructions to perform one or more functions. As an example, the processor 1320 processes the electrical signals generated by the image sensor device 1340 . Processor 1320 generates output (eg, an image displayed on a display interface) based on such processing.

[0079] The above-mentioned sensor may be a composite sensor having both an image sensor function and a biometric recognition sensor function, and may be applied to various electronic devices, such as, but not limited to, mobile phones, digital cameras, biometric recognition devices, and automotive electronic components. The above-described embodiments of the present invention will be described in more detail below through examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0080] <Color simulation evaluation> Example 1 The sensor structure shown in Figures 1, 2, and 5 was designed, and the color image characteristics of the visible light sensor were confirmed. The near-infrared absorption layer of the near-infrared light sensor uses a near-infrared absorbing material represented by the chemical formula A shown below. The absorption characteristics were determined using the "Gaussian09" program, and were analyzed by DFT and TD-DFT calculation simulation (wB97X-D / 6-311G ** The evaluation was carried out using a standardized basis set. [ka]

[0081] The transmission spectra of the optical filter and the near-infrared light sensor are shown in FIG. FIG. 14 shows the transmission spectra of the optical filter and the near-infrared light sensor of the sensor according to Example 1.

[0082] Comparative Example 1 A sensor having the same structure as in Example 1, except that no optical filter was included, was set up to check the change in color image.

[0083] <Rating I> FIG. 15 is a graph showing the external quantum efficiency of the visible light sensor of the sensor according to Example 1 as a function of wavelength, and FIG. 16 is a graph showing the external quantum efficiency of the visible light sensor of the sensor according to Comparative Example 1 as a function of wavelength. Comparing Figures 15 and 16, it was confirmed that the sensor according to Example 1 exhibits clear spectral characteristics around 700 nm, which is the boundary between the visible light region and the near-infrared region, while the sensor according to Comparative Example 1 exhibits low wavelength selectivity around 700 nm. The color image characteristics of the sensor were evaluated by YSNR10 and color difference.

[0084] The YSNR10 of a sensor is the minimum amount of light (unit: lux) at which the signal-to-noise ratio (signal / noise) is 10. Here, the signal is the sensitivity of the signal obtained by color correcting the RGB raw signal calculated by the finite difference time domain method (FDTD) using a color correction matrix (CCM), and the noise is the noise generated when measuring the signal from the image sensor. The color correction stage is a process in which the RGB raw signals obtained from the sensor are subjected to image processing to reduce the difference from the actual colors. The smaller the YSNR10 value, the better the image characteristics are with less light.

[0085] Sensor color difference (ΔE * ab) is a quantification of the difference between two colors, expressed as a distance in the CIELAB color space, and is expressed by the following equation 1. (Number 1) In the relational expression, ΔE * ab is the color difference, and L * is the brightness, and a * is the hue and chroma to red and green direction, and b * is a chromaticity diagram in the hue and chroma to blue and yellow direction.

[0086] The YSNR10 and color difference of the sensor are as shown in Table 1 below. [Table 1] Referring to Table 1 above, it can be seen that the sensor according to Example 1 has lower YSNR10 and color difference than the sensor according to Comparative Example 1, which suggests that the color image characteristics of the sensor are improved.

[0087] Examples 2 to 4 The sensor structure shown in Figures 1, 2, and 5 was designed, and the color image change of the visible light sensor was confirmed. The near-infrared absorbing layer was made of a near-infrared absorbing material represented by the following chemical formula B. The absorption characteristics were measured using the Gaussian09 program, and DFT and TD-DFT calculation simulations (wB97X-D / 6-311G ** The evaluation was carried out using a standardized basis set. [ka]

[0088] The transmission spectra of the optical filter and the near-infrared light sensor are shown in FIG. FIG. 17 shows the transmission spectra of the optical filters and near-infrared optical sensors of the sensors according to Examples 2 to 4.

[0089] Comparative Example 2 A sensor having the same structure as in Example 2, except that it does not include an optical filter, is set up to check the color image change.

[0090] <Evaluation II> FIG. 18 is a graph showing the external quantum efficiency of the visible light sensor of the sensor according to Example 2 as a function of wavelength, and FIG. 19 is a graph showing the external quantum efficiency of the visible light sensor of the sensor according to Comparative Example 2 as a function of wavelength. Comparing Figures 18 and 19, it was confirmed that the sensor according to Example 2 exhibits clear spectral characteristics around 700 nm, which is the boundary between the visible light region and the near-infrared region, while the sensor according to Comparative Example 2 exhibits low wavelength selectivity around 700 nm.

[0091] The YSNR10 and color difference of the sensor are shown in Table 2 below. [Table 2] Referring to Table 2 above, it can be seen that the sensors according to Examples 2 to 4 exhibited lower YSNR10 and equivalent or lower color difference than the sensor according to Comparative Example 2, which suggests that the color image characteristics of the sensor of the present invention are improved.

[0092] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the technical scope of the present invention. [Explanation of symbols]

[0093] 60 Lower insulating layer 65 Intermediate insulating layer 70 color filter layers 70a blue filter 70b green filter 70c red filter 80 Upper insulating layer 85 Trench 100 Visible Light Sensor 100a Blue Sensor 100b green sensor 100c red sensor 101, 210 Lower electrode 102, 220 upper electrode 103, 230 Green light absorbing layer 110 Semiconductor substrate 130, 140 Charge reservoir 200 Near-infrared light sensor 230 Near-infrared absorbing layer 290(290a, 290b, 290c) light 300 Optical Filters 400 sensors

Claims

1. a visible light sensor that detects light in the visible light region; a near-infrared light sensor disposed above the visible light sensor and detecting a portion of light in the near-infrared region; an optical filter disposed above the near-infrared light sensor and selectively transmitting light in the visible light region and part of light in the near-infrared region; the visible light sensor, the near-infrared light sensor, and the optical filter are stacked in order, the optical filter selectively transmits light in a first wavelength range belonging to the visible light range and light in a second wavelength range belonging to the near-infrared light range; blocking light in a third wavelength region between the first wavelength region and the second wavelength region; the first wavelength range is from 400 nm to 700 nm; the second wavelength range is from 750 nm to 1,000 nm; the transmission spectrum of the optical filter has a near-infrared transmission peak in the second wavelength region, and the width of the near-infrared transmission peak is 120 nm or less at a transmittance of 50%; The near-infrared transmission peak satisfies the following formulas 1 and 2: The near-infrared light sensor comprises: A pair of electrodes facing each other; a near-infrared absorbing layer located between the pair of electrodes and absorbing a portion of light in the near-infrared region; the near-infrared absorbing layer includes an organic light-absorbing material that absorbs part of light in the near-infrared region; The organic light-absorbing material is a material represented by the following chemical formula A or chemical formula B: The sensor, wherein the second wavelength range is narrower than the absorption range of the organic light-absorbing material. (Equation 1) λ ２ -λ １ ≤50 nm... Equation 1 (Equation 2) λ ４ -λ ３ ≤50 nm... Equation 2 (Here, in Equation 1 and Equation 2, λ １ is the starting wavelength at the near-infrared transmission peak, and λ ２ is the starting wavelength at which the near-infrared transmittance peak exhibits a transmittance of 50% or more, and λ ３ is the end wavelength at which the near-infrared transmission peak exhibits a transmittance of 50% or more, and λ ４ is the end wavelength of the near-infrared transmission peak. 【Chemistry 1】 【Chemistry 2】

2. 2. The sensor of claim 1, wherein the width of the second wavelength region is 120 nm or less.

3. 2. The sensor of claim 1, wherein the second wavelength range is 760 nm to 860 nm, 800 nm to 900 nm, or 890 nm to 990 nm.

4. 2. The sensor according to claim 1, wherein the transmission spectrum of the optical filter has a transmittance of 70% and a transmittance of 30%, and the width of the near-infrared transmission peak is 120 nm or less.

5. 2. The sensor according to claim 1, wherein the maximum transmittance of the near-infrared transmission peak is 90% or more.

6. The sensor of claim 1 , wherein the third wavelength range is greater than 700 nm and less than or equal to 900 nm.

7. 2. The sensor of claim 1, wherein the half-width of the absorption spectrum of the organic light-absorbing material is greater than 120 nm.

8. the visible light sensor includes a blue sensor that senses light in a blue wavelength region, a green sensor that senses light in a green wavelength region, and a red sensor that senses light in a red wavelength region; The sensor of claim 1 , wherein the blue sensor, the green sensor, and the red sensor are integrated on a semiconductor substrate.

9. the visible light sensor includes a blue sensor that senses light in a blue wavelength region, a green sensor that senses light in a green wavelength region, and a red sensor that senses light in a red wavelength region; two of the blue sensor, the green sensor, and the red sensor are photodiodes integrated on a semiconductor substrate; The sensor according to claim 1 , wherein the other of the blue sensor, the green sensor, and the red sensor is a photoelectric conversion element disposed on the semiconductor substrate.

10. The photoelectric conversion element includes a pair of electrodes facing each other, 10. The sensor of claim 9, further comprising: a visible light absorbing layer positioned between the pair of electrodes and absorbing light in any one of a blue wavelength region, a green wavelength region, and a red wavelength region.

11. 10. The sensor of claim 1 further comprising a color filter layer.

12. An electronic device comprising a sensor according to any one of claims 1 to 11.

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