Substrate processing apparatus and substrate processing method

Abstract

To provide technique enabling suppression of collapse of patterns formed on a surface of a substrate.SOLUTION: A substrate processing apparatus comprises a batch processing unit, a single-wafer processing unit and a conveyance unit. The batch processing unit processes a lot including a plurality of substrates, en bloc. The single-wafer processing unit processes the substrates included in the lot one by one. The conveyance unit delivers the substrates one by one between the batch processing unit and the single-wafer processing unit. The batch processing unit includes a processing tub in which processing liquid including rinse liquid is stored. The conveyance unit includes a fluid supply section supplying a low surface tension fluid having the surface tension lower than that of the rinse liquid, to at least one of the processing tub and the substrate during the period of time that the conveyance unit receives the substrate included in the lot inside of the processing tun and delivers the substrate to the single-wafer processing unit.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Conventionally, there is a substrate processing system that includes both a single-wafer processing section (single-wafer processing section) that processes substrates such as semiconductor wafers one by one, and a batch processing section (batch processing section) that processes multiple substrates at once, and transports substrates one by one from the batch processing section to the single-wafer processing section. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 9-162157 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can prevent collapse of a pattern formed on the surface of a substrate. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a batch processing unit, a single wafer processing unit, and a transport unit. The batch processing unit processes a lot including a plurality of substrates at once. The single wafer processing unit processes the substrates included in the lot one by one. The transport unit transfers the substrates one by one between the batch processing unit and the single wafer processing unit. The batch processing unit also includes a processing tank that stores a processing liquid including a rinse liquid. The transport unit also includes a fluid supply unit that supplies a low-surface tension fluid, which has a surface tension lower than that of the rinse liquid, to at least one of the processing tank and the substrates after receiving the substrates included in the lot in the processing tank and before transferring them to the single wafer processing unit. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to prevent collapse of a pattern formed on the surface of a substrate. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a block diagram showing a schematic configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a schematic plan view of a loading area, a batch area, and an IF area in the substrate processing system according to the embodiment. [Figure 3] FIG. 3 is a schematic plan view of the IF area, the single wafer area, and the unloading area of ​​the substrate processing system according to the embodiment. [Figure 4] FIG. 4 is a block diagram showing the configuration of an etching treatment tank according to the embodiment. [Figure 5] FIG. 5 is a block diagram showing the configuration of a rinsing treatment tank according to the embodiment. [Figure 6] FIG. 6 is a schematic diagram showing the configuration of a liquid processing unit according to an embodiment. [Figure 7] FIG. 7 is a schematic diagram showing the configuration of the drying processing unit according to the embodiment. [Figure 8] FIG. 8 is a flowchart showing the procedure of the process executed by the substrate processing system according to the embodiment. [Figure 9] FIG. 9 is a diagram showing the relationship between the IPA concentration of the processing liquid and the contact angle on the wafer surface in the embodiment. [Figure 10] FIG. 10 is a diagram showing the relationship between the IPA concentration of the processing liquid and the surface tension of the wafer surface in this embodiment. [Figure 11] FIG. 11 is a diagram for explaining the liquid film forming process according to the embodiment. [Figure 12] FIG. 12 is a diagram for explaining the liquid film forming process according to the embodiment. [Figure 13] FIG. 13 is a diagram for explaining the liquid film forming process according to the embodiment. [Figure 14]FIG. 14 is a diagram for explaining the liquid film forming process according to the embodiment. [Figure 15] FIG. 15 is a diagram for explaining the liquid film forming process according to the embodiment. [Figure 16] FIG. 16 is a diagram for explaining the liquid film forming process according to the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method disclosed herein will be described in detail with reference to the accompanying drawings. Note that the present disclosure is not limited to the following embodiments. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of elements may differ from reality. Furthermore, the dimensional relationships and ratios may differ between the drawings.

[0009] Conventionally, there is a substrate processing system that includes both a single-wafer processing section (single-wafer processing section) that processes substrates such as semiconductor wafers one by one, and a batch processing section (batch processing section) that processes multiple substrates at once, and transports substrates one by one from the batch processing section to the single-wafer processing section.

[0010] In addition, in this single-wafer processing section, a drying process (hereinafter also referred to as "supercritical drying process") may be performed in which a liquid film is formed on the pattern-forming surface of the substrate and the substrate is dried using a processing fluid in a supercritical state.

[0011] However, in the above-described conventional technology, if the contact angle of the substrate surface has increased during previous substrate processing, there is a risk that at least a portion of the substrate surface (for example, the peripheral edge of the substrate) will dry out while the substrate is being transported from the batch processing unit to the single-wafer processing unit. If a portion of the substrate surface dries out, there is a risk that the pattern will collapse in that dried portion.

[0012] Therefore, there is a need for a technology that can overcome the above-mentioned problems and prevent the collapse of patterns formed on the surface of a substrate.

[0013] <Configuration of substrate processing system> First, a schematic configuration of a substrate processing system according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a block diagram showing a schematic configuration of a substrate processing system 1 according to an embodiment.

[0014] 1, the substrate processing system 1 according to the embodiment includes a loading area A1, a batch area A2, an IF (interface) area A3, a single wafer area A4, and an unloading area A5, which are arranged in this order.

[0015] In the substrate processing system 1 according to the embodiment, semiconductor wafers (hereinafter simply referred to as "wafers") are first loaded into the loading area A1. The loading area A1 is provided with a first loading part 20 (see FIG. 2) on which a carrier C (see FIG. 2) containing a plurality of wafers W (see FIG. 2) is placed.

[0016] In the carry-in area A1, processes such as taking out a plurality of wafers W from a carrier C placed on the first placement part 20 to form a lot and transferring the formed lot to the batch area are performed.

[0017] The batch area A2 is provided with a batch processing unit that processes wafers W in batches in units of lots. In the embodiment, the batch area A2 uses the batch processing unit to perform etching processes on wafers W in units of lots. The batch area A2 is also provided with a lot transfer mechanism that transfers the lots. The lot transfer mechanism transfers the lots formed in the carry-in area A1 to the batch area A2.

[0018] In the IF area A3, wafers W are transferred (transferred) from the batch area A2 to the single wafer area A4. A transfer unit for transferring wafers W one by one is provided in the IF area A3, and wafers W are transferred one by one from the batch area to the single wafer area using this transfer unit.

[0019] The single wafer area A4 is provided with a single wafer processing unit that processes wafers W one by one. In the embodiment, the single wafer area A4 is provided with a liquid processing unit 6 (see FIG. 3) to which wafers are transferred from the IF area A3, and a drying processing unit 7 (see FIG. 3) that processes wafers processed by the liquid processing unit 6. The liquid processing unit 6 and the drying processing unit 7 are examples of a single wafer processing unit.

[0020] Specifically, the liquid processing unit 6 forms a liquid film on the surface of the wafer W. The drying processing unit 7 brings the wafer W, on whose surface the liquid film has been formed, into contact with a supercritical fluid to dry the wafer.

[0021] That is, in the substrate processing system 1 according to the embodiment, the wafers W are etched in the batch area A2 in units of a lot, and then the wafers W are dried one by one in the single wafer area A4.

[0022] The unloading area A5 is provided with a second loading section 93 (see FIG. 3) on which an empty carrier C (see FIG. 3) is placed. In the unloading area A5, a process is performed in which wafers that have completed the drying process in the single wafer area A4 are stored in the carrier C placed on the second loading section 93.

[0023] Next, a specific configuration of the substrate processing system 1 according to the embodiment will be described with reference to Figures 2 and 3. Figure 2 is a schematic plan view of the loading area A1, the batch area A2, and the IF area A3 of the substrate processing system 1 according to the embodiment.

[0024] First, the configurations of the carry-in area A1, batch area A2, and IF area A3 will be described with reference to FIG.

[0025] (About the loading area) 2, the loading area A1 is equipped with a carrier loading section 2 and a lot formation section 3. The carrier loading section 2 and the lot formation section 3 are arranged in the same direction as the areas A1 to A5 (the X-axis direction). The lot formation section 3 is adjacent to the batch area A2.

[0026] The carrier loading section 2 includes a first placement section 20, a first transport mechanism 21, carrier stocks 22 and 23, and a carrier placement table 24.

[0027] A plurality of carriers C transferred from outside are placed on the first placement part 20. The carrier C is a container that accommodates a plurality of (e.g., 25) wafers W arranged one above the other in a horizontal position. The first transfer mechanism 21 transfers the carriers C between the first placement part 20, carrier stocks 22 and 23, and a carrier placement table 24.

[0028] The lot formation unit 3 includes a second transport mechanism 30 and a plurality of (for example, two) lot holders 31, and forms a lot consisting of a plurality of wafers W. In the embodiment, a lot is formed by combining a total of 50 wafers W accommodated in two carriers C.

[0029] The plurality of wafers W that form one lot are arranged with their main surfaces facing each other at a fixed interval (given pitch). The main surface is, for example, the pattern-formed surface of the wafer W. The given pitch is, for example, half the distance between the plurality of wafers W (for example, 25 wafers) housed in the carrier C.

[0030] In the embodiment, the given pitch is 5 mm. The number of wafers W constituting a lot is not limited to 50. For example, a lot may be composed of 100 wafers W.

[0031] The second transfer mechanism 30 transfers a plurality of wafers W between the carrier C placed on the carrier mounting table 24 and the lot holder 31. The second transfer mechanism 30 is configured, for example, by an articulated robot, and transfers a plurality of (e.g., 25) wafers W at once. The second transfer mechanism 30 can also change the posture of the plurality of wafers W from a horizontal posture to a vertical posture during transfer.

[0032] The lot holder 31 holds a plurality of wafers W for one lot in a vertical position. The second transfer mechanism 30 removes a plurality of wafers W from the carrier C placed on the carrier mounting table 24 and places them in a vertical position on the lot holder 31. For example, one lot is formed by repeating this operation twice.

[0033] (About the batch area) The batch area A2 is provided with a pre-processing unit 4_1, a plurality of (here, two) etching processing units 4_2, and a post-processing unit 4_3. The pre-processing unit 4_1, the plurality of etching processing units 4_2, and the post-processing unit 4_3 are an example of a batch processing unit.

[0034] The pre-processing unit 4_1, the etching units 4_2, and the post-processing unit 4_3 are arranged in this order along the direction in which the areas A1 to A5 are arranged (the X-axis direction). The pre-processing unit 4_1 is adjacent to the loading area A1, and the post-processing unit 4_3 is adjacent to the IF area A3.

[0035] The pretreatment section 4_1 includes a treatment bath 40 for pretreatment, a treatment bath 41 for rinsing, and a lot immersion mechanism .

[0036] Processing tank 40 and processing tank 41 can accommodate one lot of wafers W arranged in a vertical position. Processing tank 40 stores a processing liquid for pre-processing. For example, processing tank 40 stores DHF (dilute hydrofluoric acid) as a processing liquid for pre-processing, in this case for removing native oxide films. Processing tank 41 stores a processing liquid for rinsing (for example, DIW (deionized water)).

[0037] The lot immersion mechanism 42 holds a plurality of wafers W forming a lot in a vertical position with a fixed interval between them. The lot immersion mechanism 42 has a lifting mechanism that raises and lowers the held lot, and lowers the lot from above the processing tanks 40, 41 to immerse it in the processing tanks 40, 41, or raises the lot immersed in the processing tanks 40, 41 to remove it from the processing tanks 40, 41.

[0038] Furthermore, the lot immersion mechanism 42 has a horizontal movement mechanism, and can move the lot horizontally between a position above the processing tank 40 and a position above the processing tank 41. Note that, although an example is shown here in which the processing tank 40 for pre-processing is disposed on the positive side of the X-axis of the processing tank 41 for rinsing, the processing tank 40 for pre-processing may also be disposed on the negative side of the X-axis of the processing tank 41 for rinsing.

[0039] The etching processing section 4_2 includes a processing bath 43 for etching, a processing bath 44 for rinsing, and lot immersion mechanisms 45 and 46.

[0040] Processing tank 43 and processing tank 44 can accommodate one lot of wafers W arranged in a vertical position. Processing tank 43 stores a processing liquid for etching (hereinafter also referred to as an "etching liquid"). Details of processing tank 43 will be described later. Processing tank 44 stores a processing liquid for rinsing (for example, DIW, etc.).

[0041] The lot immersion mechanisms 45 and 46 hold a plurality of wafers W forming a lot in a vertical position with a fixed interval between them. The lot immersion mechanism 45 has a lifting mechanism that raises and lowers the held lot, and lowers the lot from above the processing tank 43 to immerse it in the processing tank 43, or raises the lot immersed in the processing tank 43 to remove it from the processing tank 43.

[0042] Similarly, the lot immersion mechanism 46 also has a lifting mechanism that raises and lowers the held lot, lowering the lot from above the processing tank 44 to immerse it in the processing tank 44, or raising the lot immersed in the processing tank 44 to remove it from the processing tank 44.

[0043] Here, an example is shown in which the etching treatment tank 43 is arranged on the positive side of the X-axis of the rinsing treatment tank 44, but the etching treatment tank 43 may also be arranged on the negative side of the X-axis of the rinsing treatment tank 44.

[0044] The post-treatment section 4_3 includes a treatment tank 47 for post-treatment, a treatment tank 48 for rinsing, and a lot immersion mechanism 49. The treatment tank 47 and the treatment tank 48 can accommodate wafers W for one lot arranged in a vertical position.

[0045] The processing tank 47 stores a processing liquid for post-processing. For example, the processing tank 40 stores SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water) as a processing liquid for post-processing, in this case, cleaning. The processing tank 48 stores a rinsing processing liquid L1. The rinsing processing tank 48 is adjacent to the IF area A3. The processing tank 48 will be described in detail later.

[0046] The lot immersion mechanism 49 holds a plurality of wafers W forming a lot in a vertical position with a fixed interval between them. The lot immersion mechanism 49 has a lifting mechanism that raises and lowers the held lot, and lowers the lot from above the processing baths 47, 48 to immerse it in the processing baths 47, 48, or raises the lot immersed in the processing baths 47, 48 to remove it from the processing baths 47, 48.

[0047] Furthermore, the lot immersion mechanism 49 has a horizontal movement mechanism, and can move the lot horizontally between a position above the processing bath 47 and a position above the processing bath 48 .

[0048] Here, an example is shown in which four batch processing units (a pre-processing unit 4_1, multiple etching processing units 4_2, and a post-processing unit 4_3) are arranged in the batch area A2, but the number of batch processing units is not limited to this example and may be, for example, one.

[0049] The substrate processing system 1 includes a third transport mechanism 50. The third transport mechanism 50 is disposed across the carry-in area A1 and the batch area A2, and transports a lot from the carry-in area A1 to the batch area A2.

[0050] The third transfer mechanism 50 includes a holder 51, rails 52, and a movable body 53. The holder 51 holds a lot with multiple wafers W in a vertical position. The rails 52 extend along the X-axis direction from the lot holder 31 in the loading area A1 to the processing tank 48 in the batch area A2. The movable body 53 is attached to the rails 52 and moves the holder 51 along the rails 52.

[0051] The third transport mechanism 50 uses a holder 51 to hold the lot held in the lot holder 31, and transports the held lot to the batch area A2. The third transport mechanism 50 then transports the lot through the pre-processing unit 4_1, the etching processing unit 4_2, and the post-processing unit 4_3 in this order.

[0052] (Regarding etching treatment tanks) The etching treatment tank 43 will now be described with reference to Fig. 4. Fig. 4 is a block diagram showing the configuration of the etching treatment tank 43 according to this embodiment.

[0053] In the processing tank 43, an etching process is performed using a given etching solution to selectively etch the silicon nitride film out of the silicon nitride film (SiN) and silicon oxide film (SiO2) formed on the wafer W. In this etching process, a solution in which a silicon (Si)-containing compound is added to an aqueous phosphoric acid (H3PO4) solution to adjust the silicon concentration is used as the etching solution.

[0054] The silicon concentration in the etching solution can be adjusted by immersing a dummy substrate in an aqueous phosphoric acid solution to dissolve silicon (seasoning), or by dissolving a silicon-containing compound such as colloidal silica in an aqueous phosphoric acid solution. Alternatively, the silicon concentration can be adjusted by adding an aqueous solution of a silicon-containing compound to the aqueous phosphoric acid solution.

[0055] As shown in FIG. 4, the etching treatment tank 43 includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank with an open top, and stores an etching solution inside. A lot formed of a plurality of wafers W is immersed in the inner tank 101. The outer tank 102 is open at the top, and is disposed around the upper portion of the inner tank 101. The etching solution that overflows from the inner tank 101 flows into the outer tank 102.

[0056] The treatment tank 43 also includes a phosphoric acid aqueous solution supply unit 103, a silicon supply unit 104, and a DIW supply unit 105. The phosphoric acid aqueous solution supply unit 103 includes a phosphoric acid aqueous solution supply source 131, a phosphoric acid aqueous solution supply line 132, and a flow rate regulator 133.

[0057] The phosphoric acid aqueous solution supply source 131 supplies an aqueous phosphoric acid solution having a desired phosphoric acid concentration. The phosphoric acid aqueous solution supply line 132 connects the phosphoric acid aqueous solution supply source 131 and the outer tank 102, and supplies the aqueous phosphoric acid solution from the phosphoric acid aqueous solution supply source 131 to the outer tank 102.

[0058] The flow rate regulator 133 is provided on the phosphoric acid aqueous solution supply line 132, and regulates the amount of the phosphoric acid aqueous solution supplied to the outer tank 102. The flow rate regulator 133 is composed of an on-off valve, a flow control valve, a flow meter, and the like.

[0059] The silicon supply unit 104 includes a silicon supply source 141 , a silicon supply line 142 , and a flow rate regulator 143 .

[0060] The silicon supply source 141 is a tank for storing an aqueous solution of a silicon-containing compound. The silicon supply line 142 connects the silicon supply source 141 and the outer bath 102, and supplies the aqueous solution of a silicon-containing compound from the silicon supply source 141 to the outer bath 102.

[0061] The flow rate regulator 143 is provided in the silicon supply line 142 and regulates the supply rate of the silicon-containing compound aqueous solution supplied to the outer bath 102. The flow rate regulator 143 is composed of an on-off valve, a flow control valve, a flow meter, etc. The supply rate of the silicon-containing compound aqueous solution is regulated by the flow rate regulator 143, thereby regulating the silicon concentration of the etching solution.

[0062] The DIW supply unit 105 has a DIW supply source 151, a DIW supply line 152, and a flow rate regulator 153. The DIW supply unit 105 supplies DIW to the outer bath 102 to replenish moisture evaporated by heating the etching solution. The DIW supply line 152 connects the DIW supply source 151 and the outer bath 102, and supplies DIW at a predetermined temperature from the DIW supply source 151 to the outer bath 102.

[0063] The flow rate regulator 153 is provided in the DIW supply line 152 and regulates the amount of DIW supplied to the outer bath 102. The flow rate regulator 153 is composed of an on-off valve, a flow control valve, a flow meter, etc. The amount of DIW supplied is adjusted by the flow rate regulator 153, thereby adjusting the temperature, phosphoric acid concentration, and silicon concentration of the etching solution.

[0064] The processing tank 43 also includes a circulation unit 106. The circulation unit 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation unit 106 includes a circulation line 161, a plurality of processing solution supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0065] The circulation line 161 connects the outer bath 102 and the inner bath 101. One end of the circulation line 161 is connected to the outer bath 102, and the other end of the circulation line 161 is connected to a plurality of processing liquid supply nozzles 162 arranged inside the inner bath 101.

[0066] A filter 163, a heater 164, and a pump 165 are provided in the circulation line 161. The filter 163 removes impurities from the etching liquid flowing through the circulation line 161. The heater 164 heats the etching liquid flowing through the circulation line 161 to a temperature suitable for the etching process.

[0067] The pump 165 sends the etching liquid in the outer tank 102 to the circulation line 161. The pump 165, heater 164, and filter 163 are provided in this order from the upstream side.

[0068] The circulation unit 106 sends the etching liquid from the outer tank 102 into the inner tank 101 via a circulation line 161 and a plurality of processing liquid supply nozzles 162. The etching liquid sent into the inner tank 101 overflows from the inner tank 101 and flows back into the outer tank 102. In this way, the etching liquid circulates between the inner tank 101 and the outer tank 102.

[0069] The circulation unit 106 may heat the etching liquid with the heater 164 to bring the etching liquid to a boiling state.

[0070] (Regarding the rinse tank) Next, the rinse treatment tank 48 will be described with reference to Fig. 5. Fig. 5 is a block diagram showing the configuration of the rinse treatment tank 48 according to the embodiment.

[0071] As shown in Fig. 5, the rinsing processing tank 48 includes an inner tank 201 and an outer tank 202. The inner tank 201 is a box-shaped tank with an open top, and stores a rinsing processing liquid L1 inside. A lot formed of a plurality of wafers W is immersed in the inner tank 201. The outer tank 202 is open at the top, and is disposed around the upper portion of the inner tank 201. The processing liquid L1 that overflows from the inner tank 201 flows into the outer tank 202.

[0072] The processing tank 48 also includes a DIW supply unit 205 and an IPA supply unit 206. The IPA supply unit 206 is an example of a fluid supply unit.

[0073] The DIW supply unit 205 includes a DIW supply source 251, a DIW supply line 252, and a flow rate regulator 253. The DIW supply source 251 supplies DIW. This DIW is an example of a rinse liquid. The DIW supply line 252 connects the DIW supply source 251 and the outer bath 202, and supplies DIW at a given temperature from the DIW supply source 251 to the outer bath 202.

[0074] The flow rate regulator 253 is provided in the DIW supply line 252 and regulates the amount of DIW supplied to the outer bath 202. The flow rate regulator 253 is composed of an on-off valve, a flow rate control valve, a flow meter, and the like.

[0075] The IPA supply unit 206 has an IPA supply source 261, an IPA supply line 262, and a flow rate regulator 263. The IPA supply source 261 supplies IPA (isopropyl alcohol). IPA is an example of a low surface tension fluid. The IPA supply line 262 connects the IPA supply source 261 and the outer bath 202 and supplies IPA at a given temperature from the IPA supply source 261 to the outer bath 202.

[0076] The flow rate regulator 263 is provided in the IPA supply line 262 and regulates the amount of IPA supplied to the outer bath 202. The flow rate regulator 263 is composed of an on-off valve, a flow rate control valve, a flow meter, and the like.

[0077] In the embodiment, the control unit 12 (see FIG. 3) controls the DIW supply unit 205 and the IPA supply unit 206 to store the processing liquid L1 having a given IPA concentration (for example, 10% or more) in the processing tank 48.

[0078] The processing tank 43 also includes a circulation unit 207. The circulation unit 207 circulates the processing liquid L1 between the inner tank 201 and the outer tank 202. The circulation unit 207 includes a circulation line 271, a plurality of processing liquid supply nozzles 272, a filter 273, a heater 274, and a pump 275.

[0079] The circulation line 271 connects the outer bath 202 and the inner bath 201. One end of the circulation line 271 is connected to the outer bath 202, and the other end of the circulation line 271 is connected to a plurality of processing liquid supply nozzles 272 arranged inside the inner bath 201.

[0080] The filter 273, the heater 274, and the pump 275 are provided in the circulation line 271. The filter 273 removes impurities from the processing liquid L1 flowing through the circulation line 271. The heater 274 heats the processing liquid L1 flowing through the circulation line 271 to a temperature suitable for the rinsing process.

[0081] The pump 275 sends the processing liquid L1 in the outer bath 202 to the circulation line 271. The pump 275, heater 274, and filter 273 are provided in this order from the upstream side.

[0082] The circulation unit 207 sends the processing liquid L1 from the outer bath 202 into the inner bath 201 via a circulation line 271 and a plurality of processing liquid supply nozzles 272. The processing liquid L1 sent into the inner bath 201 overflows from the inner bath 201 and flows out again into the outer bath 202. In this way, the processing liquid L1 circulates between the inner bath 201 and the outer bath 202.

[0083] (About the IF area) Returning to the explanation of FIG. 2, a fourth transfer mechanism 55 is disposed in the IF area A3. The fourth transfer mechanism 55 is an example of a transfer unit. The fourth transfer mechanism 55 is formed, for example, by an articulated robot, and transfers wafers W one by one. The fourth transfer mechanism 55 can also change the posture of the wafer W from a vertical posture to a horizontal posture during transfer.

[0084] The fourth transport mechanism 55 takes out one wafer W from the lot immersed in the rinsing processing tank 48 provided in the post-processing unit 4_3, changes the posture of the taken-out wafer W from a vertical posture to a horizontal posture, and then transports it into the liquid processing unit 6 in the single wafer area A4 described later.

[0085] The fourth transfer mechanism 55 is an articulated robot having an arm 55a in which multiple arm segments are rotatably connected by multiple rotation axes. A holder 55b is connected to the tip of the arm 55a. The fourth transfer mechanism 55 can change the posture of the holder 55b between a vertical posture and a horizontal posture by operating the arm 55a. The holder 55b is configured to be able to hold wafers W one by one.

[0086] (Regarding the sheet area and carry-out area) Next, the configurations of the single wafer area A4 and the unloading area A5 will be described with reference to Fig. 3. Fig. 3 is a schematic plan view of the IF area A3, the single wafer area A4, and the unloading area A5 in the substrate processing system 1 according to the embodiment. In the single wafer area A4, a liquid processing unit 6, a drying processing unit 7, and a fifth transport mechanism 8 are arranged.

[0087] The liquid processing unit 6, fifth transport mechanism 8, and drying processing unit 7 are arranged in this order along a direction (Y-axis direction) perpendicular to the arrangement direction of the areas A1 to A5. Specifically, the fifth transport mechanism 8 is disposed in the center of the single wafer area A4, and the liquid processing unit 6 is disposed on one side of the fifth transport mechanism 8 in the Y-axis direction (here, the negative Y-axis side). In addition, the drying processing unit 7 is disposed on the opposite side of the fifth transport mechanism 8 from the liquid processing unit 6.

[0088] Liquid processing section 6 performs liquid processing on wafers W transferred from processing tank 48 (see FIG. 2) by fourth transfer mechanism 55. Specifically, liquid processing section 6 forms a liquid film of a drying processing liquid on the surface of wafer W. Details of this liquid film forming process will be described later. The wafers W on which the liquid film has been formed by liquid processing section 6 are removed from liquid processing section 6 by fifth transfer mechanism 8 and transferred to drying processing section 7.

[0089] Liquid processing unit 6 has an inlet 61 and an outlet 62 for wafers W. Inlet 61 is located opposite IF area A3, and wafers W are loaded therein by fourth transfer mechanism 55. Outlet 62 is located opposite fifth transfer mechanism 8, and wafers W are unloaded therethrough. By providing inlet 61 and outlet 62 at separate locations in this manner, wafers W can be loaded and unloaded into and from liquid processing unit 6 efficiently.

[0090] The unloading port 62 may be provided at a position opposite to the delivery area 72. In this case, the distance over which the wafer W on which the liquid film has been formed is transported by the fifth transport mechanism 8 from the liquid processing unit 6 to the drying processing unit 7 is minimized, thereby preventing the liquid film from drying.

[0091] The drying processing unit 7 performs supercritical drying processing on the wafer W on which the liquid film has been formed by the liquid processing unit 6. Specifically, the drying processing unit 7 dries the wafer W by bringing the wafer W on which the liquid film has been formed into contact with a processing fluid in a supercritical state.

[0092] The drying processing unit 7 includes a processing area 71 where a supercritical drying process is performed, and a delivery area 72 where the wafer W is delivered between the fifth transfer mechanism 8 and the processing area 71.

[0093] In addition, a supply unit 73 is disposed in the single wafer area A4 at a position adjacent to the processing area 71 of the dryer 7. The supply unit 73 supplies a processing fluid to the processing area 71 of the dryer 7. The supply unit 73 includes a group of supply devices including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing that houses the group of supply devices. In this embodiment, the supply unit 73 supplies CO2 as the processing fluid to the dryer 7.

[0094] The fifth transfer mechanism 8 includes a holder that holds the wafer W. The fifth transfer mechanism 8 is capable of moving horizontally and vertically and rotating about a vertical axis, and uses the holder to transfer the wafer W. Specifically, the fifth transfer mechanism 8 transfers the wafer W from the liquid processing unit 6 to the drying processing unit 7, and from the drying processing unit 7 to a wafer mounting table 91 in the carry-out area A5, which will be described later.

[0095] (Liquid processing section) Here, the configurations of the liquid processing unit 6 and the drying processing unit 7 will be described. First, the configuration of the liquid processing unit 6 will be described with reference to Fig. 6. Fig. 6 is a schematic diagram showing the configuration of the liquid processing unit 6 according to the embodiment.

[0096] As shown in FIG. 6, liquid processing section 6 includes a chamber 520, a substrate rotating section 530, a processing liquid supplying section 540, and a collection cup 560.

[0097] The chamber 520 accommodates a substrate rotation unit 530, a processing liquid supply unit 540, and a collection cup 560. An FFU (Fan Filter Unit) 521 is provided on the ceiling of the chamber 520. The FFU 521 forms a downflow within the chamber 520.

[0098] The substrate rotation unit 530 includes a holder 531, a support 532, and a drive unit 533, and holds and rotates the wafer W. The holder 531 holds the bottom surface of the wafer W by suction, and holds the wafer W horizontally. Note that the holder 531 is not limited to holding the bottom surface of the wafer W, and may hold the edge of the wafer W.

[0099] The support part 532 is a member extending in the vertical direction, and has a base end rotatably supported by the drive part 533, and a tip end which horizontally supports the holding part 531. The drive part 533 rotates the support part 532 around the vertical axis.

[0100] The substrate rotation unit 530 rotates the support column 532 using the drive unit 533, thereby rotating the holder 531 supported by the support column 532, and thereby rotating the wafer W held by the holder 531.

[0101] The processing liquid supply unit 540 supplies DIW and IPA to the surface of the wafer W. The processing liquid supply unit 540 includes a first nozzle 541 and a second nozzle 542, arms 543 and 544 that horizontally support the first nozzle 541 and the second nozzle 542, respectively, and pivoting and lifting mechanisms 545 and 546 that pivot and lift the arms 543 and 544, respectively. The first nozzle 541 is an example of a pure water supply unit, and the second nozzle 542 is an example of an IPA supply unit.

[0102] The first nozzle 541 is connected to a DIW supply source 549 via a valve 547 and a flow regulator 548. The second nozzle 542 is connected to an IPA supply source 552 via a valve 550 and a flow regulator 551.

[0103] The first nozzle 541 discharges the DIW supplied from the DIW supply source 549 to a position designated by the control unit 12. The second nozzle 542 discharges the IPA supplied from the IPA supply source 552 to a position designated by the control unit 12.

[0104] Recovery cup 560 is disposed to surround holding part 531, and collects DIW, IPA, etc. that splash from wafer W due to rotation of holding part 531. A drain outlet 561 is formed at the bottom of recovery cup 560, and the DIW, IPA, etc. collected by recovery cup 560 are discharged from drain outlet 561 to the outside of liquid processing unit 6.

[0105] Furthermore, an exhaust port 562 for discharging the gas supplied from the FFU 521 to the outside of the liquid processing unit 6 is formed at the bottom of the collection cup 560.

[0106] (About the drying processing section) Next, the configuration of the drying processing unit 7 will be described with reference to Fig. 7. Fig. 7 is a schematic diagram showing the configuration of the drying processing unit 7 according to the embodiment.

[0107] 7, the drying processing unit 7 has a main body 601, a holding plate 602, and a lid member 603. The housing-like main body 601 has an opening 604 formed therein for loading and unloading a wafer W. The holding plate 602 holds the wafer W to be processed in a horizontal direction. The lid member 603 supports the holding plate 602 and also seals the opening 604 when the wafer W is loaded into the main body 601.

[0108] The main body 601 is a container having a processing space formed therein capable of accommodating one wafer W, and its wall is provided with supply ports 605, 606 and discharge port 607. The supply ports 605, 606 and the discharge port 607 are connected to a supply flow path and a discharge flow path, respectively, for circulating a supercritical fluid in the drying processing unit 7.

[0109] Supply port 605 is connected to the side surface of housing-like main body 601 opposite to opening 604. Supply port 606 is connected to the bottom surface of main body 601. Discharge port 607 is connected to the lower side of opening 604. Note that although two supply ports 605, 606 and one discharge port 607 are illustrated in FIG. 7, the numbers of supply ports 605, 606 and discharge ports 607 are not particularly limited.

[0110] Furthermore, fluid supply headers 608, 609 and a fluid discharge header 610 are provided inside the main body 601. A plurality of supply ports are formed in the fluid supply headers 608, 609, aligned in the longitudinal direction of the fluid supply headers 608, 609, and a plurality of discharge ports are formed in the fluid discharge header 610, aligned in the longitudinal direction of the fluid discharge header 610.

[0111] The fluid supply header 608 is connected to the supply port 605 and is provided adjacent to the side surface opposite the opening 604 inside the housing-like main body 601. In addition, a plurality of supply ports formed side by side on the fluid supply header 608 face the opening 604 side.

[0112] The fluid supply header 609 is connected to the supply port 606, and is provided at the center of the bottom surface inside the housing-like main body 601. Furthermore, a plurality of supply ports formed side by side on the fluid supply header 609 face upward.

[0113] The fluid discharge header 610 is connected to the discharge port 607, and is provided inside the housing-like main body 601 adjacent to the side surface on the opening 604 side and below the opening 604. In addition, a plurality of discharge ports formed next to the fluid discharge header 610 face upward.

[0114] The fluid supply headers 608 and 609 supply the supercritical fluid into the main body 601. The fluid discharge header 610 guides the supercritical fluid in the main body 601 to the outside of the main body 601 and discharges it. The supercritical fluid discharged to the outside of the main body 601 via the fluid discharge header 610 includes IPA liquid that has been dissolved in the supercritical fluid in a supercritical state from the surface of the wafer W.

[0115] In the drying processing unit 7, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid under high pressure (for example, 16 MPa), and gradually dissolves in the supercritical fluid, gradually replacing the spaces between the patterns. Finally, the spaces between the patterns are filled only with the supercritical fluid.

[0116] After the IPA liquid is removed from between the patterns, the pressure inside the main body 601 is reduced from a high pressure state to atmospheric pressure, whereby the CO2 changes from a supercritical state to a gaseous state, and the spaces between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0117] (About the removal area) Returning to the explanation of Figure 3, a wafer mounting table 91, a sixth transport mechanism 92, and a second mounting unit 93 are arranged in the unloading area A5. The wafer mounting table 91, the sixth transport mechanism 92, and the second mounting unit 93 are arranged in this order along the arrangement direction of the areas A1 to A5 (the X-axis direction). The wafer mounting table 91 is arranged adjacent to the single wafer area A4.

[0118] A wafer W is placed in a horizontal position on the wafer placement table 91. The wafer placement table 91 is accessible by both the fifth transfer mechanism 8 and the sixth transfer mechanism 92.

[0119] The sixth transfer mechanism 92 includes a holder that holds a wafer W. The sixth transfer mechanism 92 is capable of moving in horizontal and vertical directions and rotating about a vertical axis, and uses the holder to transfer the wafer W between the wafer placement table 91 and the second placement unit 93. The second placement unit 93 is capable of placing a plurality of carriers C thereon.

[0120] (Regarding the control device) The substrate processing system 1 includes a control device 11. The control device 11 is, for example, a computer, and includes a control unit 12 and a storage unit 13. The storage unit 13 stores programs that control various processes executed in the substrate processing system 1. The control unit 12 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 13.

[0121] Such a program may be recorded on a computer-readable storage medium and installed from that storage medium into the storage unit 13 of the control device 11. Examples of computer-readable storage media include hard disks (HDs), flexible disks (FDs), compact disks (CDs), magnetic optical disks (MOs), and memory cards.

[0122] <Specific operation of the substrate processing system> Next, the procedure of the process executed by the substrate processing system 1 will be described with reference to Fig. 8 to Fig. 16. Fig. 8 is a flowchart showing the procedure of the process executed by the substrate processing system 1 according to the embodiment. Each process shown in Fig. 8 is executed under the control of the control unit 12.

[0123] As shown in FIG. 8, the substrate processing system 1 uses the second transport mechanism 30 to take out and load multiple wafers W from two carriers C, respectively, and forms a lot with multiple (e.g., 25) wafers W accommodated in each carrier C (step S101).

[0124] The process of step S101 will be described with reference to Fig. 2. First, the first transport mechanism 21 takes out the carrier C from the first receiver 20 and places it on the carrier table 24.

[0125] Then, the second transfer mechanism 30 takes out the plurality of wafers W from the carrier C placed on the carrier mounting table 24, changes the posture of the taken-out plurality of wafers W from a horizontal posture to a vertical posture, and places the plurality of wafers W on the lot holder 31. By repeating this operation twice, a lot is formed. The plurality of wafers W included in the lot are, for example, arranged with their main surfaces facing each other.

[0126] Next, the substrate processing system 1 performs pre-processing on the formed lot (step S102). Specifically, the third transfer mechanism 50 receives the lot from the lot holder 31 and transfers it to the lot immersion mechanism 42 of the pre-processing unit 4_1. Then, the lot immersion mechanism 42 immerses the received lot in DHF stored in the processing bath 40.

[0127] Thereafter, the lot immersion mechanism 42 removes the lot from the processing bath 40 and immerses it in the DIW stored in the processing bath 41. As a result, the DHF adhering to the wafer W is washed away by the DIW stored in the processing bath 41.

[0128] Subsequently, the substrate processing system 1 performs an etching process on the lot processed by the pre-processing unit 4_1 (step S103). Specifically, the third transfer mechanism 50 receives the lot from the lot immersion mechanism 42 of the pre-processing unit 4_1 and transfers it to the lot immersion mechanism 45 of the etching processing unit 4_2.

[0129] The lot immersion mechanism 45 then immerses the received lot in the etching solution stored in the processing bath 43. Thereafter, the lot immersion mechanism 45 removes the lot from the processing bath 43 and transfers it to the third transfer mechanism 50.

[0130] Next, the third transfer mechanism 50 transfers the lot received from the lot immersion mechanism 45 to the lot immersion mechanism 46. Then, the lot immersion mechanism 46 immerses the received lot in the DIW stored in the processing tank 44. As a result, the etching liquid adhering to the wafer W is washed away by the DIW stored in the processing tank 44.

[0131] Next, the substrate processing system 1 performs a cleaning process on the lot processed by the etching processing unit 4_2 (step S104). Specifically, the third transfer mechanism 50 receives the lot from the lot immersion mechanism 46 and transfers it to the lot immersion mechanism 49 of the post-processing unit 4_3. Then, the lot immersion mechanism 49 immerses the received lot in SC1 stored in the processing tank 47.

[0132] Next, the substrate processing system 1 performs a fluid supply process on the lot processed by the lot immersion mechanism 49 (step S105). Specifically, the lot immersion mechanism 49 removes the lot from the processing tank 47 and immerses it in the rinsing processing liquid L1 stored in the processing tank 48. As a result, SC1 adhering to the wafer W is washed away by the processing liquid L1 stored in the processing tank 48.

[0133] In this embodiment, the IPA supply unit 206 supplies IPA, which is a chemical liquid having a lower surface tension than DIW (hereinafter also referred to as a "low surface tension fluid"), to the rinsing treatment tank 48.

[0134] As a result, the processing tank 48 stores processing liquid L1, which is a rinse liquid (DIW) containing a low-surface tension fluid (IPA), and by immersing multiple wafers W in the processing tank 48, the low-surface tension fluid is supplied to the multiple wafers W.

[0135] By performing the rinsing process with the processing liquid L1 containing a low surface tension fluid, the contact angle on the surface of the wafer W can be made smaller than when performing the rinsing process with a rinsing liquid consisting of only DIW (i.e., an IPA concentration of 0(%)), as shown in Fig. 9. Fig. 9 is a diagram showing the relationship between the IPA concentration of the processing liquid L1 and the contact angle on the surface of the wafer W in this embodiment.

[0136] As a result, in the embodiment, the wettability of the entire surface of the wafer W can be improved, and therefore, the peripheral edge of the wafer W can be prevented from drying while the wafer W is being transferred from the processing tank 48 to the liquid processing unit 6. Therefore, according to the embodiment, it is possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0137] Furthermore, in the embodiment, by performing a rinse process with the processing liquid L1, the surface tension of the wafer W surface can be reduced compared to when performing a rinse process with a rinse liquid consisting of only DIW (i.e., an IPA concentration of 0(%)), as shown in Fig. 10. Fig. 10 is a diagram showing the relationship between the IPA concentration of the processing liquid L1 and the surface tension of the wafer W surface in the embodiment.

[0138] As a result, in the embodiment, when a wet wafer W is transported from the processing tank 48 to the liquid processing unit 6, a meniscus formed between the wafer W and the holder 55b of the fourth transport mechanism 55 can be prevented from causing the wafer W to stick to the holder 55b.

[0139] That is, in the embodiment, when the wafer W is transferred from the processing tank 48 to the liquid processing unit 6 while still wet and the wafer W is placed in the loading port 61, it is possible to prevent the wafer W from sticking to the holder 55b and causing misalignment. Therefore, according to the embodiment, a good liquid film can be formed on the surface of the wafer W in the liquid processing unit 6.

[0140] In addition, in the embodiment, it is preferable that the low surface tension fluid supplied to the processing tank 48 is IPA. In this way, by modifying the surface of the wafer W using the same IPA as the liquid film formed on the surface of the wafer W in the liquid film forming process described below, adverse effects due to the use of another chemical liquid (for example, the other chemical liquid remaining as impurities) can be reduced. Therefore, according to the embodiment, it is possible to maintain a good yield of the wafers W.

[0141] In the embodiment, an example in which IPA is used as the low surface tension fluid has been shown, but the present disclosure is not limited to this example, and for example, methanol, ethanol, water-soluble glycol, etc. may also be used as the low surface tension fluid.

[0142] In addition, in the embodiment, a low surface tension fluid may be supplied into the processing tank 48, and the low surface tension fluid may be supplied to the wafers W. This allows the rinse process and the fluid supply process to be performed simultaneously on a plurality of wafers W, thereby shortening the overall processing time for the wafers W.

[0143] In the embodiment, the IPA concentration of the processing liquid L1 stored in the processing tank 48 is preferably 10% or more, which can further reduce the contact angle and surface tension on the surface of the wafer W, as shown in FIGS.

[0144] Therefore, according to the embodiment, collapse of the pattern formed on the surface of the wafer W can be further suppressed, and a better liquid film can be formed on the surface of the wafer W in the liquid processing section 6.

[0145] In this embodiment, the IPA concentration of the processing liquid L1 stored in the processing tank 48 is preferably 25% or more, and more preferably 40% or more, which can further reduce the contact angle and surface tension on the surface of the wafer W, as shown in FIGS.

[0146] In addition, in the embodiment, a concentration meter (not shown) is separately provided to measure the IPA concentration of the processing liquid L1 stored in the processing tank 48, and the control unit 12 supplies IPA from the IPA supply unit 206 to the processing tank 48 based on the IPA concentration of the processing liquid L1 measured by the concentration meter.

[0147] For example, when the IPA concentration of the processing liquid L1 stored in the processing tank 48 becomes lower than a given concentration (for example, 10(%)), the control unit 12 may operate the IPA supply unit 206 to supply IPA from the IPA supply unit 206 to the processing tank 48.

[0148] As a result, even if the IPA concentration drops due to mixing of the chemical liquid adhering to the wafer W with the processing liquid L1 in the processing tank (here, processing tank 47) in which the wafer W was processed immediately before, the IPA concentration in processing tank 48 can be maintained at a value equal to or higher than a given concentration. Therefore, according to the embodiment, IPA, which is a low surface tension fluid, can be stably supplied to the wafer W.

[0149] In the embodiment described so far, an example has been shown in which a low surface tension fluid is supplied to the wafer W by supplying the low surface tension fluid into the rinsing processing tank 48, but the present disclosure is not limited to such an example.

[0150] For example, a processing tank (not shown) separate from the rinsing processing tank 48 is provided, and only DIW is stored in the rinsing processing tank 48, while a mixed fluid of DIW and IPA (i.e., processing liquid L1) is stored in the other processing tank.

[0151] Then, after performing a rinse process on the lot in the processing tank 48, the control unit 12 may transport the lot to another processing tank and immerse the lot in the other processing tank, thereby supplying a low surface tension fluid to the wafer W.

[0152] This also reduces the contact angle and surface tension on the surface of the wafer W, thereby preventing the pattern formed on the surface of the wafer W from collapsing and enabling a good liquid film to be formed on the surface of the wafer W in the liquid processing unit 6.

[0153] Also, in this configuration, a concentration meter may be provided separately to measure the IPA concentration of the processing liquid L1 stored in another processing tank, and the control unit 12 may supply IPA from the IPA supply unit to the other processing tank based on the IPA concentration of the processing liquid L1 measured by the concentration meter.

[0154] As a result, even if the IPA concentration in the processing tank (here, processing tank 48) in which the wafer W was processed immediately before is reduced due to mixing of the rinse liquid adhering to the wafer W with the processing liquid L1, the IPA concentration in the other processing tank can be maintained at a value equal to or higher than a given concentration. Therefore, according to the embodiment, IPA, which is a low surface tension fluid, can be stably supplied to the wafer W.

[0155] In addition, in the embodiment, a nozzle (not shown) for ejecting a low surface tension fluid may be separately provided near the opening of the rinsing treatment tank 48, and only DIW may be stored in the rinsing treatment tank 48.

[0156] Then, after performing a rinse process on the lot in the processing tank 48, when the wafer W is lifted from the processing tank 48 by the holder 55b, the control unit 12 may eject the low surface tension fluid from the nozzle described above and supply the low surface tension fluid so as to spray it over the entire wafer W.

[0157] This also reduces the contact angle and surface tension on the surface of the wafer W, thereby preventing the pattern formed on the surface of the wafer W from collapsing and enabling a good liquid film to be formed on the surface of the wafer W in the liquid processing unit 6.

[0158] In addition, in an embodiment, after performing a rinse process on the lot in the processing tank 48, when the controller 12 uses the holder 55b to lift the wafer W from the processing tank 48, the controller 12 may eject a low-surface tension fluid from the nozzle described above to supply the low-surface tension fluid to the gripping portion (not shown) of the holder 55b.

[0159] This configuration also prevents the wafer W from sticking to the holder 55b of the fourth transfer mechanism 55 due to the meniscus formed between the wafer W and the holder 55b when the wafer W is transported from the processing tank 48 to the liquid processing unit 6 while still wet.

[0160] In other words, with this configuration, when the wafer W is transported from the processing tank 48 to the liquid processing unit 6 while still wet and the wafer W is placed at the loading port 61, it is possible to prevent the wafer W from sticking to the holder 55b and becoming misaligned.

[0161] Therefore, according to the embodiment, a good liquid film can be formed on the surface of the wafer W in the liquid processing section 6.

[0162] Returning to the explanation of Fig. 8, following the fluid supplying process, the substrate processing system 1 performs a liquid film forming process on the wafers W processed by the post-processing unit 4_3 (step S106). The liquid film forming process is performed on a wafer W basis, not on a lot basis.

[0163] First, the fourth transfer mechanism 55 takes out one wafer W from the lot held in the lot immersion mechanism 49 inside the processing tank 48. Then, the fourth transfer mechanism 55 changes the orientation of the wafer W from a vertical position to a horizontal position, and delivers the wafer W to the holder 531 in the liquid processing unit 6 through the loading port 61 (see FIG. 3).

[0164] Then, the control unit 12 controls the liquid processing unit 6 to form a liquid film of IPA on the surface of the wafer W. Details of the liquid film forming process will be described with reference to Figures 11 to 16. Figures 11 to 16 are views for explaining the liquid film forming process according to the embodiment.

[0165] 11, in the liquid film forming process according to the embodiment, first, the control unit 12 controls the processing liquid supply unit 540 to form a liquid film of the processing liquid L1 on the surface, and also supplies DIW from the first nozzle 541 toward the center Wa of the non-rotating wafer W. As a result, a liquid film of DIW is formed over the entire surface of the wafer W. At this time, the second nozzle 542 is in the standby position.

[0166] If the wafer W is rotated at high speed and then DIW is supplied to the wafer W, there is a risk that at least a portion of the surface of the wafer W will run out of liquid between the time the wafer W starts to rotate and the time the DIW is supplied, which may cause the pattern formed on the surface of the wafer W to collapse.

[0167] On the other hand, in the embodiment, DIW is supplied to a non-rotating (stopped) wafer W, and the wafer W is rotated after the DIW starts to be supplied to the wafer W. This makes it possible to prevent the surface of the wafer W from running out of liquid, and therefore to prevent the pattern formed on the surface of the wafer W from collapsing.

[0168] In an embodiment, the control unit 12 may manage the timing to start rotating the wafer W by time. For example, the control unit 12 may start rotating the wafer W after a given time has elapsed since the start of supplying DIW. Alternatively, the control unit 12 may set the timing to start rotating the wafer W based on the state of the liquid film on the surface of the wafer W monitored by a camera (not shown) or the like.

[0169] In the example of FIG. 11, DIW is supplied to a non-rotating wafer W, and the wafer W is rotated after the supply of DIW to the wafer W begins. However, the present disclosure is not limited to this example.

[0170] For example, simultaneously with or immediately before the first nozzle 541 starts to discharge DIW, the wafer W may be rotated at a rotation speed (for example, 30 (rpm)) at which the processing liquid L1 on the wafer W is not shaken off.

[0171] Also, simultaneously with or immediately before the first nozzle 541 starts to discharge DIW, the wafer W may be rotated at a rotational acceleration (for example, 30 (rpm / s)) that does not cause the processing liquid L1 on the wafer W to be shaken off.

[0172] These also make it possible to prevent the surface of the wafer W from running out of liquid, and therefore to prevent the pattern formed on the surface of the wafer W from collapsing.

[0173] 12, the control unit 12 continues to rotate the wafer W at a given rotation speed, and moves the first nozzle 541 that discharges DIW from above the center Wa of the wafer W to above the inner periphery in the middle part of the wafer W. Then, in parallel with the movement of the first nozzle 541, the control unit 12 moves the second nozzle 542 to above the inner periphery in the middle part of the wafer W.

[0174] 12, IPA is not discharged from the second nozzle 542. In the process of Fig. 12, the first nozzle 541 and the second nozzle 542 are disposed to face each other across the center part Wa of the wafer W.

[0175] 13, the control unit 12 supplies IPA toward the wafer W from the second nozzle 542 located above the inner periphery of the intermediate portion of the wafer W. In the process of FIG. 13, the control unit 12 continues to rotate the wafer W at a given rotation speed and continues to supply DIW to the wafer W from the first nozzle 541.

[0176] 14, the control unit 12 moves the first nozzle 541 that discharges DIW above the outer periphery of the central portion of the wafer W. In parallel with the movement of the first nozzle 541, the control unit 12 continues to rotate the wafer W at a given rotation speed and moves the second nozzle 542 that discharges IPA above the center Wa of the wafer W.

[0177] In addition, in the process of Figure 14, the control unit 12 may gradually move the supply position of DIW away from the center Wa and gradually move the supply position of IPA closer to the center Wa while keeping the distance between the first nozzle 541 and the second nozzle 542 approximately constant.

[0178] This makes it possible to prevent the liquid film from being interrupted at the center Wa of the wafer W when the processing liquid supplied to the center Wa of the wafer W is switched from DIW to IPA. Therefore, according to the embodiment, it is possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0179] 15, the control unit 12 continues to rotate the wafer W at a given rotation speed, and controls the processing liquid supply unit 540 to gradually move the first nozzle 541 that discharges DIW toward above the peripheral edge of the wafer W. At this time, the control unit 12 controls the position of the first nozzle 541 so that DIW is supplied to the end of the IPA discharged by the second nozzle 542.

[0180] This makes it possible to prevent the liquid film from being interrupted on the surface of the wafer W due to a liquid shortage (so-called Marangoni phenomenon) occurring near the end of the IPA discharged from the second nozzle 542. Therefore, according to the embodiment, it is possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0181] 16, the control unit 12 controls the processing liquid supply unit 540 to stop the supply of DIW from the first nozzle 541 that has reached the peripheral edge of the wafer W, and also stops the rotation of the wafer W. As a result, a liquid film of IPA is formed on the entire surface of the wafer W.

[0182] As described above, in the liquid film formation process according to the embodiment, the entire surface of the wafer W on which a liquid film of the processing liquid L1 has been formed is first replaced with DIW, and then the entire surface of the wafer W is replaced with IPA, forming a liquid film of IPA on the surface of the wafer W.

[0183] This makes it possible to prevent the liquid film from being interrupted on the surface of the wafer W due to a liquid shortage occurring near the end of the IPA discharged from the second nozzle 542. Therefore, according to the embodiment, it is possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0184] Returning to the description of Fig. 8, following the liquid film forming process, the substrate processing system 1 performs a drying process on the wafer W after the liquid film forming process (step S107).

[0185] Specifically, the fifth transfer mechanism 8 removes the wafer W from the liquid processing unit 6 through the removal port 62 and transfers the removed wafer W to the holding plate 602 (see FIG. 7) arranged in the delivery area 72 (see FIG. 3). Next, the drying processing unit 7 moves the holding plate 602 to the processing area 71, thereby placing the wafer W inside the main body 601.

[0186] Next, the drying unit 7 supplies the supercritical fluid into the main body 601. As a result, the pressure inside the main body 601 is increased from atmospheric pressure to a given first pressure. Here, the first pressure is a pressure equal to or higher than the critical pressure (approximately 7.2 MPa) at which CO2, which is the supercritical fluid, enters a supercritical state, and is, for example, about 16 MPa.

[0187] Therefore, by supplying the supercritical fluid into the main body 601, the supercritical fluid in the main body 601 changes in phase to a supercritical state, and the IPA on the wafer W begins to dissolve into the supercritical fluid in this supercritical state.

[0188] Thereafter, the pressure inside the main body 601 is reduced from the high pressure state to atmospheric pressure, whereby the CO2 changes from a supercritical state to a gaseous state, and the gaps between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0189] In this manner, in the embodiment, by drying the surface of the wafer W using a supercritical fluid, it is possible to prevent the pattern formed on the wafer W from collapsing due to the surface tension of the DIW during drying.

[0190] Next, the substrate processing system 1 performs an unloading process to place the dried wafer W into the carrier C (step S108).

[0191] Specifically, the drying processing unit 7 moves the holding plate 602 to the delivery area 72, and the fifth transfer mechanism 8 receives the dried wafer W from the holding plate 602. Next, the fifth transfer mechanism 8 places the received wafer W on the wafer placement table 91. Then, the sixth transfer mechanism 92 removes the wafer W from the wafer placement table 91 and stores it in the carrier C placed on the second placement unit 93.

[0192] The substrate processing apparatus (substrate processing system 1) according to the embodiment includes a batch processing unit (pre-processing unit 4_1, etching processing unit 4_2, post-processing unit 4_3), a single wafer processing unit (liquid processing unit 6, drying processing unit 7), and a transfer unit (fourth transfer mechanism 55). The batch processing unit (pre-processing unit 4_1, etching processing unit 4_2, post-processing unit 4_3) processes a lot including a plurality of substrates (wafers W) at once. The single wafer processing unit (liquid processing unit 6, drying processing unit 7) processes each substrate (wafer W) included in the lot. The transfer unit (fourth transfer mechanism 55) transfers each substrate (wafer W) between the batch processing unit (pre-processing unit 4_1, etching processing unit 4_2, post-processing unit 4_3) and the single wafer processing unit (liquid processing unit 6, drying processing unit 7). The batch processing unit (pre-processing unit 4_1, etching processing unit 4_2, post-processing unit 4_3) includes a processing tank 48 that stores a processing liquid L1 including a rinse liquid. The transfer unit (fourth transfer mechanism 55) also has a fluid supply unit (IPA supply unit 206). The fluid supply unit (IPA supply unit 206) supplies a low-surface tension fluid, which has a lower surface tension than the rinse liquid, to at least one of the processing tank 48 and the substrate (wafer W) after receiving the substrate (wafer W) included in the lot in the processing tank 48 and before transferring it to the single-wafer processing unit. This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0193] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the fluid supply unit (IPA supply unit 206) supplies a low surface tension fluid to the processing bath 48. This can shorten the overall processing time for the wafers W.

[0194] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the low surface tension fluid is IPA, and the processing liquid L1 stored in the processing tank 48 has an IPA concentration of 10% or more. This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing, and also makes it possible to form a better liquid film on the surface of the wafer W in the liquid processing unit 6.

[0195] The substrate processing apparatus (substrate processing system 1) according to the embodiment further includes a concentration meter that measures the IPA concentration of the processing liquid L1 stored in the processing tank 48, and a control unit 12 that controls each unit. Based on the IPA concentration of the processing liquid L1 measured by the concentration meter, the control unit 12 supplies IPA from the fluid supply unit (IPA supply unit 206) to the processing tank 48. This allows IPA, which is a low-surface tension fluid, to be stably supplied to the wafer W.

[0196] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, the fluid supply unit has a nozzle that ejects a low surface tension fluid onto the substrate (wafer W) when the substrate (wafer W) is pulled up from the processing bath 48. This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0197] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the transport unit (fourth transport mechanism 55) has a gripping unit that grips the peripheral edge of the substrate (wafer W), and the fluid supply unit supplies the low surface tension fluid toward the gripping unit. This allows a good liquid film to be formed on the surface of the wafer W in the liquid processing unit 6.

[0198] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the low surface tension fluid is IPA, which makes it possible to maintain a good yield of wafers W.

[0199] The substrate processing apparatus (substrate processing system 1) according to the embodiment further includes a control unit 12 that controls each unit. The single-wafer processing unit includes a liquid processing unit 6 that includes a holder 531 that rotatably holds a substrate (wafer W), a pure water supply unit (first nozzle 541) that supplies pure water to the substrate (wafer W), and an IPA supply unit (second nozzle 542) that supplies IPA to the substrate (wafer W). The control unit 12 replaces the surface of the substrate (wafer W) held by the holder 531 with pure water, and then replaces the surface of the substrate (wafer W) with IPA. This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0200] Furthermore, in the substrate processing apparatus (substrate processing system 1) according to the embodiment, when supplying pure water to the substrate (wafer W), the control unit 12 adjusts the rotation speed of the substrate (wafer W) to a rotation speed that prevents the processing liquid L1 from being shaken off from the substrate (wafer W). This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0201] In the substrate processing apparatus (substrate processing system 1) according to the embodiment, the single wafer processing section has a drying section 7 that dries the substrate (wafer W). The drying section 7 brings the substrate (wafer W) with a wet surface into contact with a processing fluid in a supercritical state to dry the substrate (wafer W). This makes it possible to prevent the pattern formed on the surface of the wafer W from collapsing.

[0202] The substrate processing method according to the embodiment includes a batch processing step, a single-wafer processing step, and a transfer step. The batch processing step processes a lot including a plurality of substrates (wafers W) at once. The single-wafer processing step processes each substrate (wafer W) included in the lot. The transfer step transfers each substrate (wafer W) between the batch processing step and the single-wafer processing step. The batch processing step also includes an immersion step in which the lot is immersed in a processing tank 48 that stores a processing liquid L1 including a rinse liquid. The transfer step also includes a fluid supply step. The fluid supply step supplies a low-surface-tension fluid, which has a surface tension lower than that of the rinse liquid, to at least one of the processing tank 48 and the substrate (wafer W) after the substrate (wafer W) included in the lot is received in the processing tank 48 and before it is transferred to the single-wafer processing step. This prevents the pattern formed on the surface of the wafer W from collapsing.

[0203] Although the embodiments of the present disclosure have been described above, the present disclosure is not limited to the above-described embodiments, and various modifications are possible without departing from the spirit of the present disclosure.

[0204] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0205] W wafer (an example of a substrate) 1. Substrate processing system (an example of a substrate processing device) 4_1 Preprocessing section (example of batch processing section) 4_2 Etching processing section (example of batch processing section) 4_3 Post-processing section (example of batch processing section) 6 Liquid processing unit (example of single wafer processing unit) 7 Drying processing section (example of single wafer processing section) 12 Control Unit 48 Treatment tank 55 Fourth conveying mechanism (an example of a conveying unit) 206 IPA supply unit (an example of a fluid supply unit) 531 Holding part 541 Nozzle No. 1 (an example of a pure water supply unit) 542 Second nozzle (an example of an IPA supply unit)

Claims

1. a batch processing unit that processes a lot including a plurality of substrates at once; a single-substrate processing section that processes the substrates included in the lot one by one; a transport unit that transfers the substrates one by one between the batch processing unit and the single wafer processing unit; a control unit that controls each unit; Equipped with The batch processing unit a processing tank for storing a processing liquid containing a rinse liquid and IPA and having a surface tension lower than that of the rinse liquid; a concentration meter for measuring an IPA concentration of the processing liquid stored in the processing tank; and The single wafer processing section includes: a liquid processing section including a holder that rotatably holds the substrate, a pure water supply section that supplies pure water to the substrate, and an IPA supply section that supplies IPA to the substrate; a drying processing unit that dries the substrate, The control unit the plurality of substrates immersed in the processing solution in the processing bath are lifted one by one by the transport unit and transported to the holder; Thereafter, the surface of the substrate held by the holder is replaced with pure water; Thereafter, the surface of the substrate is replaced with IPA, Thereafter, the substrate whose surface is wet with IPA is brought into contact with a processing fluid in a supercritical state to dry the substrate; IPA is supplied from a fluid supply unit to the processing tank so that the IPA concentration of the processing liquid stored in the processing tank and measured by the concentration meter is 10% or more and lower than the concentration of IPA supplied to the surface of the substrate held by the holding unit. Substrate processing equipment.

2. The conveying unit is a nozzle for discharging IPA onto the substrate when the substrate is lifted from the processing tank; The substrate processing apparatus according to claim 1 .

3. The conveying unit is a gripping portion for gripping a peripheral edge portion of the substrate; The nozzle is IPA is supplied toward the gripping portion. The substrate processing apparatus according to claim 2 .

4. The control unit When supplying the pure water to the substrate, the rotation speed of the substrate is set to a rotation speed at which the processing liquid on the substrate is not shaken off. The substrate processing apparatus according to any one of claims 1 to 3.

5. a batch processing step for processing a lot including a plurality of substrates at once; a single-wafer processing step of processing the substrates included in the lot one by one; a transport step of transferring the substrates one by one between the batch processing step and the single wafer processing step; Including, The batch treatment step comprises: an immersion step of immersing the lot in a processing tank storing a processing liquid containing a rinse liquid and IPA and having a surface tension lower than that of the rinse liquid; The transporting step includes: the plurality of substrates immersed in the treatment liquid in the immersion step are lifted up one by one and transported to a holder that rotatably holds the substrates; The single wafer processing step includes: a pure water substitution step of substituting pure water for the surface of the substrate held by the holder; an IPA replacement step of replacing the surface of the substrate with IPA after the pure water replacement step; a drying step of contacting the substrate, the surface of which is wet with IPA, with a processing fluid in a supercritical state to dry the substrate after the IPA replacement step; The batch treatment step comprises: an IPA supplying step of supplying IPA from a fluid supply unit to the processing tank so that the IPA concentration of the processing liquid stored in the processing tank is 10% or more and is lower than the concentration of IPA supplied to the surface of the substrate held by the holding unit. Substrate processing method.

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