Substrate transport device and substrate transport method

Abstract

To provide a substrate transfer apparatus that can suppress the increase of exclusive floor space and weight.SOLUTION: The substrate transfer apparatus is composed of a circular tube whose tube axis extends horizontally and forms a substrate transfer area inside, a magnetic field forming section that forms a magnetic field on its surface and has a magnetic field forming surface facing the transfer area, and a transfer body that moves away from the magnetic field forming surface and in the direction of the surface of the magnetic field forming surface due to the magnetic field to transfer the substrates.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present disclosure relates to a substrate transport apparatus and a substrate transport method. [Background technology]

[0002] In the manufacturing process of semiconductor devices, semiconductor wafers (hereinafter referred to as wafers) serving as substrates are transported within an apparatus and processed. Patent Document 1 describes an apparatus having multiple vacuum modules each equipped with a wafer transport robot, which are connected to each other by vacuum tubes. A processing module is connected to each vacuum module, and the robot is configured to transport wafers. The robot is shown to have a multi-joint arm whose bottom is mounted on the floor of the vacuum module. The shape of the vacuum tube is not described. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2020-170866 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate transport device that can suppress increases in occupied floor space and weight. [Means for solving the problem]

[0005] The substrate transport device of the present disclosure includes a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with picture, the circular tube forms a part of a housing having an internally sealed space; The housing is provided with an exhaust port for exhausting air so that the sealed space becomes a vacuum atmosphere; the magnetic field generating unit divides the inside of the circular pipe into a lower space and an upper space including the transport area, the exhaust port is provided in the circular pipe and opens into the lower space, a communication passage that communicates the upper space with the lower space; a first gas supply port that supplies a first gas to the upper space to form an airflow from the upper space to the lower space; will be established. Another substrate transport device of the present disclosure includes: a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with The magnetic field generating surface includes a first inclined surface and a second inclined surface that rise from the left and right central portions of the circular tube toward one of the left and right sides and the other, respectively, when viewed in the tube axis direction; The transport body includes a first transport body that moves in a surface direction of the first inclined surface, and a second transport body that moves in a surface direction of the second inclined surface. Another substrate transport apparatus of the present disclosure includes: a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with The magnetic field generating surface is provided so as to form the inner peripheral surface of the circular tube. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to provide a substrate transport device that can suppress an increase in the occupied floor area and weight. [Brief explanation of the drawings]

[0007] [Figure 1] 1 is a plan view of a substrate processing apparatus including a substrate transfer module according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is a vertical cross-sectional side view of the vacuum transfer module taken along the tube axis of the module. [Figure 3] FIG. 3 is a vertical cross-sectional side view of the vacuum transfer module perpendicular to the tube axis. [Figure 4] FIG. 2 is a perspective view of a circular pipe constituting the vacuum transfer module. [Figure 5] FIG. 4 is a front view of a flange at the end of a circular pipe that constitutes the vacuum transfer module. [Figure 6] FIG. 2 is a perspective view of a transport body and a floor plate provided in the substrate processing apparatus. [Figure 7] FIG. 10 is an explanatory view showing an example of nitrogen gas supply in the vacuum transfer module. [Figure 8] FIG. 10 is an explanatory view showing the separation of the circular tube. [Figure 9] 10 is an explanatory diagram showing how the magnetic field generating unit is led out from the circular tube. FIG. [Figure 10] FIG. 10 is a vertical cross-sectional side view of a vacuum transfer module when a temperature adjustment mechanism is provided. [Figure 11] FIG. 10 is a vertical cross-sectional side view showing a vacuum transfer module to which a cleaning liquid supply mechanism is applied. [Figure 12] FIG. 10 is a vertical cross-sectional side view of the vacuum transfer module in a double-pipe configuration. [Figure 13] FIG. 2 is a plan view showing an example of a configuration in which the substrate processing apparatuses are connected to each other. [Figure 14] FIG. 10 is a vertical cross-sectional side view of a vacuum transfer module in which magnetic field generating surfaces are oriented in different directions. [Figure 15] FIG. 1 is a perspective view of a vacuum transfer module in which the magnetic field generating surface is a circular tube. DETAILED DESCRIPTION OF THE INVENTION

[0008] A substrate processing apparatus 1 including a substrate transfer apparatus according to one embodiment of the present disclosure is shown in Figure 1. The substrate processing apparatus 1 is installed in an atmospheric environment and includes a loader module 2, a load lock module 25, a vacuum transfer module 3, and eight processing modules 7, each of which processes a circular substrate, i.e., a wafer W, in a vacuum environment.

[0009] The loader module 2 is a module called an EFEM (Equipment Front End Module), and it loads and unloads wafers W into and from a transfer container C called a FOUP (Front Open Unified Pod) that stores the wafers W. The wafers W unloaded from the transfer container C are taken into the substrate processing apparatus 1. The loader module 2 is long horizontally, and its interior is an atmospheric and normal-pressure atmosphere. In the following description, the length direction of the loader module 2 is referred to as the X direction, and the direction perpendicular to the X direction is referred to as the Y direction. These X and Y directions are both horizontal directions. One side and the other side of the X direction will be referred to as the +X side and the -X side, respectively, and one side and the other side of the Y direction will be referred to as the +Y side and the -Y side, respectively.

[0010] On the -Y side of the loader module 2, for example, three container mounting sections 21 for mounting a transfer container C are provided side by side in the X direction. A transfer mechanism 22 is provided within the loader module 2. Unlike the transfer body 61 described below, this transfer mechanism 22 is not magnetically levitated, but is configured as an articulated arm that is freely movable up and down and in the X direction. The transfer mechanism 22 transfers wafers W between the transfer container C on the container mounting sections 21 and the load lock module 25.

[0011] A load lock module 25 is provided on the +Y side of the loader module 2, and a vacuum transfer module 3 is provided in turn on the +Y side of the load lock module 25. The load lock module 25 has a stage 26 therein on which a wafer W is placed. The stage 26 has three lift pins 27 that protrude and retract on the upper surface of the stage 26, and the wafer W can be transferred between the transfer mechanism 22 of the loader module 2 and the transfer body 61 of the vacuum transfer module 3 via the lift pins 27.

[0012] A door valve 28 and a gate valve 29 are interposed between the load lock module 25 and the loader module 2, and between the load lock module 25 and the loader module 2, respectively. The load lock module 25 can supply and exhaust N2 (nitrogen) gas to and from its interior, and with the door valve 28 and the gate valve 29 closed, the interior can be switched between a normal pressure N2 gas atmosphere and a vacuum atmosphere. The interior is set to a vacuum atmosphere when the wafer W is transferred to the vacuum transfer module 3, and to a normal pressure atmosphere when the wafer W is transferred to the loader module 2.

[0013] Next, an overview of the vacuum transfer module 3, which is a substrate transfer device, will be described with reference to the longitudinal cross-sectional views of FIGS. 2 and 3. The vacuum transfer module 3 includes a housing 31, a magnetic field generating unit 6, and a transfer body 61. The magnetic field generating unit 6 and the transfer body 61 are disposed within the housing 31. The housing 31 forms an enclosed space, which is evacuated to create a vacuum atmosphere. The transfer body 61 moves laterally while floating above the floor plate 65 due to the magnetic field generated by the floor plate 65 constituting the magnetic field generating unit 6, and transfers wafers W between the load lock module 25 and the processing modules 7, and between the processing modules 7. This floating movement prevents dust generation, keeping the interior of the vacuum transfer module 3 and the processing modules 7 clean and suppressing processing abnormalities caused by adhesion of foreign matter to the wafers W.

[0014] The housing 31 will be described in detail. The housing 31 is composed of a joining circular pipe 32, a partition wall 39, and eight side pipes 34. The joining circular pipe 32 is a straight pipe, and the tube axis P of the joining circular pipe 32 extends along the Y direction. Therefore, the tube axis P extends in the lateral direction, more specifically, in the horizontal direction. Note that Fig. 2 is a longitudinal side view taken along the tube axis P, and Fig. 3 is a longitudinal side view perpendicular to the axial direction of the tube axis P. To avoid complication of the illustration, the tube axis P is shown only in Fig. 3 out of Figs. 2 and 3.

[0015] The joining circular pipe 32 is formed by connecting two metal circular pipes 33 so that their pipe axes overlap. Therefore, the pipe axis P of the joining circular pipe 32 is also the pipe axis of each circular pipe 33. The eight side pipes 34 are provided so that four are attached to each circular pipe 33. In FIG. 2, reference numeral 11 denotes a support pillar, and a plurality of pillars are provided at intervals in the Y direction, supporting each of the two circular pipes 33 on the floor 12 on which the substrate processing apparatus 1 is installed. The height of each circular pipe 33 supported in this manner is aligned with the height of the load lock module 25, which is supported on the floor 12 by the base 13.

[0016] By configuring the joining circular pipe 32, the circular pipe 33 forms a part of the housing 31. Referring to the perspective view of FIG. 4 , the circular pipe 33 is described with the -Y side end and the +Y side end each expanding outward to form flanges 35 and 36. Two circular openings 37 are provided in each of the +X side wall and the -X side wall of the circular pipe 33, spaced apart from each other in the Y direction. The two openings 37 on the -Y side face each other, and the two openings 37 on the +Y side face each other. Therefore, the four openings 37 are arranged in a 2 x 2 matrix in plan view.

[0017] The previously mentioned side pipes 34 are provided two on each of the -X side and +X side of the outer periphery of the circular pipe 33. Each side pipe 34 is a very short circular pipe, and one end of each of the four side pipes 34 is connected to the periphery of the opening 37. The other end of each side pipe 34 extends along the X direction in the opposite direction to the pipe axis P. The other end of each side pipe 34 widens outward from the side pipe 34 to form a flange 38.

[0018] Hereinafter, to distinguish between the two circular pipes 33, the circular pipe located on the -Y side may be referred to as 33A, and the circular pipe located on the +Y side may be referred to as 33B. Next, the connections between circular pipes 33A, 33B and other components will be described. Flange 35 of circular pipe 33A is connected to gate valve 29 described above. When gate valve 29 is open, the interior of circular pipe 33A communicates with the interior of load lock module 25, allowing wafers W to be transferred between vacuum transfer module 3 and load lock module 25. Flange 36 of circular pipe 33B is connected to partition wall 39. Partition wall 39 is provided to close the opening on the +Y side of circular pipe 33B.

[0019] Furthermore, a processing module 7 is connected to the flange 38 of each side pipe 34 from the X direction via a gate valve 71. Therefore, a wafer W transfer path formed by the side pipes 34 opens on the side of the joining circular pipe 32 so as to be spaced apart along the pipe axis P, and this transfer path is configured to be opened and closed by the gate valve 71. The eight processing modules 7 are arranged in a 2×4 matrix in a plan view. The gate valves 71 connected to the processing modules 7 are closed except when necessary for wafer W transfer, separating the atmospheres between the modules. The same applies to the door valves 28 and gate valves 29. The processing modules 7 are sometimes referred to as processing modules 7A to 7D to distinguish them from one another, and are arranged in the order of 7A, 7B, 7C, and 7D from the -Y side to the +Y side. That is, two of each processing module 7A, 7B, 7C, and 7D are provided.

[0020] To explain the configuration of the above-mentioned processing modules 7, each processing module 7 includes a processing vessel, the interior of which is evacuated to a vacuum by an exhaust mechanism (not shown). Similar to the load lock module 25, a stage 26 equipped with lift pins 27 is provided within the processing vessel. Note that the stage 26 in each processing module 7 includes a flow path through which a fluid whose temperature is adjusted by, for example, a chiller unit flows, and a heater as a temperature adjustment unit, in order to adjust the temperature of the wafer W placed thereon to a desired temperature for processing.

[0021] The processing chamber is also provided with a gas supply unit (not shown), such as a gas shower head, through which a processing gas is supplied into the processing chamber, which is maintained in a vacuum atmosphere. The wafer W, which is placed on the stage 26 and has its temperature adjusted, is exposed to the processing gas, thereby undergoing a process corresponding to the processing gas. Examples of such processes include etching, film formation, and annealing. A plasma generation mechanism may be provided so that the processing gas is converted into plasma for processing.

[0022] Next, the connection between circular pipe 33A and circular pipe 33B will be described with reference to Figure 5, which is a front view of flange 36 of circular pipe 33A as viewed from the +Y side. Flange 36 of circular pipe 33A and flange 35 of circular pipe 33B face each other, and O-rings 41 and 42 are interposed between these flanges 35 and 36 so as to fit closely to each of flanges 35 and 36. O-rings 41 and 42 are annular sealing members concentric with a point on pipe axis P, and the diameter of O-ring 41 is larger than the diameter of O-ring 42. Therefore, O-rings 41 and 42 are formed along the pipe openings of circular pipes 33A and 33B. An annular gap 43 is formed between the outer periphery of O-ring 42 and the inner periphery of O-ring 41.

[0023] The flanges 35, 36, which are connected to each other via the O-rings 41, 42, are fixed to each other with fasteners (not shown), such as bolts, and can be released by removing the fasteners. In other words, the circular pipes 33A, 33B are detachable. By making the circular pipes 33 detachable, the magnetic field generating unit 6, which will be described later, can be easily attached and detached to and from the housing 31. In addition, by making the circular pipes 33A, 33B detachable, a flow of N2 gas can be formed in the gap 43 to prevent the atmosphere outside the housing 31 from flowing into the circular pipes 33A, 33B through the flanges 35, 36.

[0024] The mechanism by which this airflow is formed will now be described. The downstream end of pipe 44 is connected to flange 36 of circular pipe 33A from the -Y side, and the downstream end of pipe 44 opens into gap 43 through hole 44A drilled in the thickness direction (Y direction) of flange 36. The upstream side of pipe 44 is connected to gas supply source 40 via flow rate adjuster 45. Gas supply source 40 supplies clean inert gas, such as N2 gas, to pipe 44. Flow rate adjuster 45 is equipped with a valve and a mass flow controller, and adjusts the amount of N2 gas supplied to pipe 44 downstream.

[0025] The upstream end of exhaust pipe 46 is connected to flange 36 from the -Y side, and the downstream end of exhaust pipe 46 opens into gap 43 through hole 46A drilled in the thickness direction (Y direction) of flange 36. The positions of hole 44A and hole 46A are 180 degrees apart when viewed from tube axis P so that N2 gas can be supplied to each part of gap 43 with high uniformity.

[0026] The downstream end of the exhaust pipe 46 is connected to an exhaust mechanism 48 via an exhaust amount adjustment unit 47. The exhaust mechanism 48 is, for example, a vacuum pump. The exhaust amount adjustment unit 47 is, for example, a valve, and adjusts the amount of air exhausted by the exhaust pipe 46. When the inside of the housing 31 is evacuated to create a vacuum atmosphere to transport the wafer W, N2 gas (second gas) is supplied to the gap 43 and air is exhausted from the gap 43, thereby forming an airflow along the circumference of the gap 43, as indicated by the dotted arrow in the figure. This airflow is constantly formed during operation of the substrate processing apparatus 1, in which the inside of the housing 31 is maintained in a vacuum atmosphere. Even if air flows into the gap 43 from outside the housing 31, it is swept away by this airflow and exhausted, preventing the air from flowing into the housing 31.

[0027] The circular pipe 33A and the circular pipe 33B are the first and second circular pipes, the flange 36 of the circular pipe 33A and the flange 35 of the circular pipe 33B are the first and second flanges, and the O-ring 41 and the O-ring 42 are the first and second sealing members, respectively. The gas flow forming mechanism is composed of the gas supply source 40, the flow rate adjusting unit 45, the exhaust amount adjusting unit 47, the piping 44, and the exhaust pipe 46.

[0028] In the following description, flow rate adjustment units other than flow rate adjustment unit 45 are configured similarly to flow rate adjustment unit 45, and adjust the flow rate of gas downstream of the pipe in which the flow rate adjustment unit is provided. Adjusting the flow rate also includes setting the flow rate to zero (i.e., stopping the supply of gas). In the following description, exhaust volume adjustment units other than exhaust volume adjustment unit 47 are configured similarly to exhaust volume adjustment unit 47, and adjust the flow rate of gas downstream of the exhaust pipe in which the exhaust volume adjustment unit is provided.

[0029] The connection between circular pipe 33B and partition wall 39 is similar to the connection between circular pipes 33A and 33B. Specifically, partition wall 39 is detachably attached to flange 36 of circular pipe 33B via a fastener, and O-rings 41 and 42 are interposed between flange 36 and partition wall 39. N2 gas is supplied to and exhausted from gap 43 between O-rings 41 and 42 via piping 44 and exhaust pipe 46, forming an airflow along the periphery of gap 43.

[0030] Next, the transfer body 61 and the magnetic field forming unit 6 will be described with reference to FIG. 6 as well. The transfer body 61 includes a moving body 62 and a support body 63. The moving body 62 includes a magnet 64, which is, for example, a permanent magnet. The support body 63 is provided on the side of the moving body 62, and the wafer W is supported on the support body 63. In this example, the support body 63 is configured in a two-pronged fork shape so as not to interfere with the lift pins 27 when the wafer W is transferred to and from each module.

[0031] The magnetic field generating units 6 are provided within the housing 31, and are respectively arranged within the circular pipes 33A and 33B. The magnetic field generating units 6 are composed of a floor plate 65, support posts 68, and wheels 69. The floor plate 65 is configured as a flat plate, and a large number of coils 66 are embedded and distributed along its surface. Power is supplied individually to each coil 66 from a power supply unit 60. The coils 66 generate a magnetic field on a magnetic field generating surface 67, which is the main surface of the floor plate 65 and faces upward, with a strength corresponding to the supplied power. In other words, each coil 66 acts as an electromagnet. In this example, the magnetic field generating surface 67 is a horizontal plane. The magnets 64 of the transport body 61 and the energized coils 66 repel each other due to magnetic force, causing the transport body 61 to levitate from the magnetic field generating surface 67.

[0032] By switching the coils 66 to which power is supplied and adjusting the supplied power, the distribution and strength of the magnetic field on the magnetic field generating surface 67 can be controlled, allowing the transfer body 61 to move in the X and Y directions, change its orientation, remain stationary, and change its levitation height above the magnetic field generating surface 67 while remaining levitated. Note that movement in the X and Y directions here means both separate and simultaneous movements in the X and Y directions. In this way, the transfer body 61 can move between different positions on the magnetic field generating surface 67 in the direction of the magnetic field generating surface 67. Then, with the moving body 62 constituting the transfer body 61 positioned on the magnetic field generating surface 67, the support body 63 enters the module to be transferred, thereby transferring the wafer W to and from the module.

[0033] To further explain floor plate 65, which is the magnetic field generating section, floor plate 65 is configured to be long in the Y direction and has a length approximately equal to the length of circular pipe 33. Floor plate 65 of circular pipe 33A and floor plate 65 of circular pipe 33B are located at the same height and are in contact with each other. Therefore, the interior of joined circular pipe 32 is divided into upper space 51 and lower space 52 by floor plate 65 from one end to the other end in the pipe axis direction.

[0034] The lower space 52 provides a space in which various devices for operating the substrate processing apparatus 1 are installed, for example. The floor plate 65 is configured, for example, by connecting magnetic field generating plates 80, each formed in the shape of a roughly square tile in a plan view, in the Y direction. In each of FIGS. 1 to 6, the individual magnetic field generating plates 80 are omitted to avoid cluttering the illustrations, and magnetic field generating plates 80 will be shown in later examples. The side surfaces of the floor plate 65 facing the +X direction and the -X direction are spaced apart from the inner circumferential surface of the circular pipe 33, and a communication passage 50 that connects the upper space 51 and the lower space 52 is formed between the side surfaces and the inner circumferential surface (see FIG. 3).

[0035] A plurality of support pillars 68 are provided at intervals in the Y direction at each of the +X side end and the -X side end of floor plate 65 to support the +X side end and the -X side end from below. Wheels 69 are provided at the bottom end of each support pillar 68, and the wheels 69 are rotatable around an axis extending in the X direction. Magnetic field forming unit 6 is detachable from circular tube 33, and wheels 69 are used for attachment and detachment. The attachment and detachment procedure will be described later.

[0036] Next, the housing 31 will be further described. A heat shield 14, which is a heat shielding member, is provided above a floor plate 65 in the upper space 51 within the joining circular pipe 32 so as to face the floor plate 65, and is formed from one end of the upper space 51 to the other end in the Y direction. The height region between the heat shield 14 and the floor plate 65 constitutes the transfer region 15 in which the wafer W is transferred by the transfer body 61. Therefore, the magnetic field generating surface 67 of the floor plate 65 faces the transfer region 15, and the heat shield 14 is provided on the opposite side of the magnetic field generating surface 67 from the transfer region 15. The side pipe 34 described above opens into the transfer region 15 so that the transfer body 61 can transfer the wafer W to and from the processing module 7.

[0037] The heat shield 14 serves to block radiant heat from the wafer W toward the wall of the joining circular pipe 32. That is, even if a wafer W is processed in the processing module 7 and then transferred into the joining circular pipe 32 at a relatively high temperature, the heat shield 14 is provided to prevent the wall and, ultimately, the surroundings of the vacuum transfer module 3 from becoming too hot due to radiant heat from the wafer W. This prevents abnormal processing by other devices outside the substrate processing apparatus 1 and prevents workers from being unable to move or work.

[0038] A gas nozzle 53 is provided at the top of the joining tube 32, and the outlet of the gas nozzle 53 faces downward. In other words, the outlet opens into the upper space 51. As shown in FIG. 2, the gas nozzles 53 are arranged at intervals in the Y direction, and in this example, four gas nozzles 53 are provided. These gas nozzles 53 may be distinguished from one another and may be referred to as 53A, 53B, 53C, and 53D from the -Y side to the +Y side. For example, the Y-direction positions of the gas nozzles 53A, 53B, 53C, and 53D are aligned with the Y-direction positions of the processing modules 7A, 7B, 7C, and 7D, respectively.

[0039] Each gas nozzle 53 is connected to the gas supply source 40 via a pipe 54. A flow rate adjuster 55 is provided in each pipe 54, allowing the flow rate of the N2 gas discharged from each gas nozzle 53 to be individually adjusted. An exhaust port 56 opening into the lower space 52 is provided at the bottom of the joined circular pipe 32. A plurality of exhaust ports 56 are provided at intervals in the Y direction. One end of an exhaust pipe 57 is connected to each of the exhaust ports 56, and the other end of each exhaust pipe 57 is connected to the exhaust mechanism 48 via an exhaust rate adjuster 58. The discharge port of the gas nozzle 53 is a first gas supply port. Therefore, the first gas supply ports open at different positions in the axial direction of the joined circular pipe 32. The N2 gas discharged from the gas nozzle 53 is the first gas.

[0040] During operation of the substrate processing apparatus 1, exhaust is performed through the exhaust port 56, and the interior of the housing 31 is created as a vacuum atmosphere at a desired pressure. Concurrently with this exhaust, N2 gas is supplied through the gas nozzle 53, and the interior of the housing 31 is created as a desired vacuum pressure, allowing the wafer W to be transferred. The flow of N2 gas is indicated by dotted arrows in Figure 3. As shown in Figure 3, the N2 gas flowing downward through the upper space 51 flows around below the heat shield 14, then flows downward through the transfer region 15, and then flows into the lower space 52 through the connecting passage 50 and into the exhaust port 56 to be removed.

[0041] As described above, the N2 gas discharged from the gas nozzle 53 flows as a purge gas to purge the upper space 51, removing foreign matter such as particles from the upper space 51. Furthermore, even if particles are generated in the lower space 52 in which equipment (not shown) is installed as described above, the flow of the purge gas prevents them from scattering into the upper space 51. As described above, the upper space 51 and the wafers W transferred through the transfer region 15 that constitutes the upper space 51 are kept clean due to the division of the inside of the circular pipe 33 into upper and lower parts and the action of the purge gas supplied to the upper space 51.

[0042] Incidentally, it is preferable to increase the flow rate of the N2 gas toward the lower space 52 and make the pressure in the upper space 51 higher than the pressure in the lower space 52 so that the upper space 51 is more reliably cleaned. That is, it is preferable to adjust the amount of N2 gas supplied from each gas nozzle 53 and the amount of gas exhausted from each exhaust port 56 (i.e., control the operation of the flow rate adjuster 55 and the exhaust amount adjuster 58) so that such a pressure difference is created. To enable the creation of such a pressure difference, the communication passage 50 on the side of the floor plate 65 is formed to have an appropriate width (length in the X direction). Note that the difference between the pressure in the process module 7 and the pressure in the upper space 51 is set to be relatively small so as to suppress the gas flow between the inside of the process vessel of the process module 7 and the inside of the housing 31 when the gate valve 71 is open and the movement of foreign matter such as particles accompanying that flow.

[0043] As described above, each of the gas nozzles 53A to 53D is positioned relatively close to the two process modules 7 by being aligned in the Y direction. Therefore, the N2 gas discharged from the gas nozzles 53A to 53D is supplied to a region in the upper space 51 facing the gate valve 71 connected to the relatively close process module 7. The gas nozzles 53 aligned in the Y direction are associated with the gate valves 71 connected to the process modules 7, and each flow rate adjuster 55 operates to change the flow rate of the N2 gas from the corresponding gas nozzle 53 in accordance with the opening and closing of the gate valves 71.

[0044] More specifically, when the corresponding gate valves 71 are all closed, the gas nozzles 53 supply N2 gas at a first flow rate. On the other hand, when one of the two corresponding gate valves 71 is open, the gas nozzles 53 supply N2 gas at a second flow rate that is greater than the first flow rate. Therefore, the gas flow rate from a gas nozzle 53 when one of the corresponding gate valves 71 is open is greater than the gas flow rate from a gas nozzle 53 when both of the corresponding gate valves 71 are closed. FIG. 7 shows a specific example of this gas flow rate control. In this example, the gate valve 71 connected to process module 7C is open, and the gate valves 71 connected to process modules 7A, 7B, and 7D are closed. As a result, N2 gas is discharged from gas nozzles 53A, 53B, and 53D at a first flow rate, and N2 gas is discharged from gas nozzle 53C at a second flow rate.

[0045] Supplying N2 gas at the second flow rate increases the flow rate of N2 gas in the area of ​​the upper space 51 facing the open gate valve 71, thereby suppressing diffusion of the gas from the processing module 7 into the housing 31. As a result, the outflow of foreign matter into the transfer region 15 due to the diffusion of the gas is suppressed.

[0046] Because the joining pipe 32 is long in the Y direction, a plurality of gas nozzles 53 are provided as described above. If the flow rate of N2 gas from each gas nozzle 53 were constantly increased to enhance the effect of suppressing gas diffusion from the processing module 7, the amount of N2 gas consumed during operation of the substrate processing apparatus 1 would increase. However, by adjusting the flow rate of each gas nozzle 53 in response to the opening and closing of the corresponding gate valve 71, it is possible to suppress the amount of N2 gas consumed while achieving a high effect of suppressing gas diffusion from the processing module 7 to the upper space 51. The flow rate adjuster 55 that adjusts the gas flow rate to each gas nozzle 53 and the gas supply source 40 constitute a first gas supply unit.

[0047] Note that the flow rates of N gas from gas nozzles 53 other than the gas nozzle 53 discharging gas at the second flow rate may be reduced from the first flow rate, and in that case, the supply of N gas may be stopped from the gas nozzle 53. Specifically, when N gas is discharged from gas nozzle 53C at the second flow rate as shown in Fig. 7, the discharge of N gas from gas nozzles 53A, 53B, and 53D may be set to a flow rate lower than the first flow rate, or the discharge may be stopped.

[0048] Further, the exhaust ports 56 may be associated with gate valves 71 that are relatively close in position in the Y direction. When all of the corresponding gate valves 71 are closed, exhaust is performed at a first exhaust rate. When any of the corresponding gate valves 71 is opened, the operation of the exhaust rate adjustment unit 47 may be controlled so that exhaust is performed at a second exhaust rate that is greater than the first exhaust rate. This may increase the gas flow rate in the area facing the corresponding gate valve 71, thereby suppressing gas diffusion from the processing module 7 to the upper space 51. Note that the exhaust rate from the exhaust ports 56 other than the exhaust port 56 with the second exhaust rate may be set to a rate lower than the first exhaust rate. In this case, exhaust from the exhaust ports 56 other than the exhaust port 56 with the second exhaust rate may be stopped.

[0049] However, since the exhaust port 56 is configured to open into the lower space 52, which is partitioned from the upper space 51 in which the gate valve 71 is provided, there are cases in which the exhaust port 56 has little effect on the airflow in the upper space 51. Therefore, in order to more reliably obtain the gas diffusion effect from the processing module 7, it is preferable to change the gas flow rate from the gas nozzle 53 as described above, or to control the exhaust amount from each exhaust port 56 as well as changing the gas flow rate.

[0050] Next, the control unit 10 shown in FIG. 1 will be described. The control unit 10 is configured by a computer and includes a program. The program includes steps that output control signals to each component of the substrate processing apparatus 1 to control the operation of each component so that the wafer W can be transferred and processed, as described below. Specifically, the program controls the operation of the transfer mechanism 22, the operation of the transfer body 61 via power supply from the power supply unit 60 to each coil 66, the opening and closing of the door valve 28 and gate valves 29 and 71, the N2 gas flow rate adjustment operation by the flow rate adjusters 45 and 55, the exhaust rate adjustment operation by the exhaust rate adjusters 47 and 58, and the operation of each processing module 7. The program is stored in the control unit 10 in a storage medium, such as a hard disk, a compact disc, a DVD, or a memory card.

[0051] Regarding the transfer path of the wafer W in the substrate processing apparatus 1, the wafer W loaded from the transfer container C into the loader module 2 is transferred in the order of the load lock module 25 → vacuum transfer module 3. After the wafer W is processed in the processing module 7, it is transferred in the order of the vacuum transfer module 3 → load lock module 25 → loader module 2 → transfer container C. Regarding the transfer between the vacuum transfer module 3 and the processing module 7 in more detail, the apparatus may be configured so that the wafer is transferred to only one of the eight processing modules 7 and processed therein, or may be configured so that the wafer is transferred to multiple of the eight processing modules 7 in sequence and processed therein.

[0052] Incidentally, it is known to use a vacuum transfer module in which an articulated arm is mounted on the floor when transferring wafers W between the load lock module 25 and the processing module 7. In order to ensure the space necessary for the articulated arm to rotate, the housing of this vacuum transfer module is configured to be rectangular with relatively large widths in the front-to-back and left-to-right directions.

[0053] However, because such a rectangular housing has a large internal space, its footprint (occupied floor area) tends to be relatively large. Furthermore, when creating a vacuum inside a rectangular housing, the corners of the housing are subjected to a relatively large force from the surrounding atmosphere, making them prone to distortion. Increasing the strength of the corners to prevent distortion increases the weight of the housing. As a result, handling the housing, including transportation and assembly, can require relatively large costs and labor. Furthermore, manufacturing a rectangular housing requires cutting a large piece of metal base material, but the relatively large amount of cutting can make it difficult to reduce manufacturing costs and improve mass productivity.

[0054] However, with the vacuum transfer module 3 described above, the transfer body, magnetically levitated by the magnetic field generating unit 6, moves within the housing 31 to transfer the wafer W, and the housing 31 is made up of a circular tube 33. Therefore, the weight of the housing 31 does not increase due to the corners, and there is no need to reinforce the corners. Furthermore, there is no need to increase the width of the housing 31 in the front-to-back or left-to-right directions to ensure rotation space for the articulated arm. As a result, the footprint of the vacuum transfer module 3 is reduced. Furthermore, the reduced weight makes it easy to handle. Furthermore, the circular tube 33 that constitutes the housing 31 may be, for example, an existing mass-produced tube, which reduces the manufacturing cost and effort of the vacuum transfer module 3.

[0055] Next, an example of the work process when an operator removes the magnetic field generating unit 6 and the carrier 61 from the housing 31 to perform maintenance on these will be described. First, the pressure inside the housing 31 is changed from vacuum pressure to atmospheric pressure by stopping the exhaust from the exhaust port 56 and supplying N2 gas from the gas nozzle 53. At the same time, the magnetic levitation of the carrier 61 is stopped and the carrier 61 is landed on the magnetic field generating surface 67. Thereafter, the connection between the circular pipes 33A and 33B that make up the housing 31 is released, and the circular pipes 33A and 33B are separated (FIG. 8).

[0056] Next, the magnetic field generating unit 6 is pulled in the axial direction of the circular pipe 33A through the pipe opening on the flange 36 side of the circular pipe 33A, thereby carrying the magnetic field generating unit 6 together with the carrier 61 out of the circular pipe 33A (FIG. 9). If the carrier 61 has been placed on the magnetic field generating surface 67 inside the circular pipe 33A, the carrier 61 is also carried out of the circular pipe 33A together with the magnetic field generating unit 6. The magnetic field generating unit 6 is carried out of the circular pipe 33B in the same manner as it was carried out of the circular pipe 33A, except that the magnetic field generating unit 6 is carried out through the pipe opening on the flange 35 side. The above-described carrying out of the magnetic field generating unit 6 from the circular pipes 33A and 33B can be done with relatively little force because the wheels 69 roll on the inner surfaces of the circular pipes 33A and 33B. The wheel 69 rotates about the X-axis as a rotation axis as described above, thereby forming a guide member for guiding the relative movement of the magnetic field forming unit 6 along the tube axis P with respect to the circular tubes 33A and 33B.

[0057] After maintenance is completed, when storing the magnetic field generating unit 6 and carrier 61 back into the circular pipes 33A and 33B, the procedure is reversed from that for removal. In this case, the wheels 69 allow the magnetic field generating unit 6 to be moved within the circular pipes 33A and 33B with relatively little force. In the above description, the magnetic field generating unit 6 may be transported into and out of the circular pipe 33B through the pipe opening on the flange 36 side by removing the partition wall 39 from the flange 36, instead of through the pipe opening on the flange 36 side. An inspection hatch may be provided in the wall of the circular pipe 33 so that an operator can confirm from outside the circular pipe 33 that the magnetic field generating unit 6 has been stored in the designated position within the circular pipe 33. The inspection hatch is to be closed when the device is not in use.

[0058] As described above, the circular tubes 33A, 33B that make up the housing 31 are separable, and the circular tubes 33A, 33B and the magnetic field forming unit 6 are attached and detached by moving relatively in the axial direction of the tubes via the tube openings of the circular tubes 33A, 33B. Therefore, even if the diameters of the circular tubes 33A, 33B are relatively small, maintenance of the magnetic field forming unit 6 and the conveying body 61 and manufacturing of the vacuum conveying module 3 can be easily performed. Furthermore, wheels 69 are provided to guide this relative movement, making the attachment and detachment work easy.

[0059] The guide members for guiding the above-mentioned relative movement are not limited to rolling elements such as wheels 69. For example, a guide rail (referred to as one guide rail) extending along floor plate 65 is provided below floor plate 65, and a guide rail (referred to as another guide rail) extending along pipe axis P is provided on the inner peripheral surface of circular pipe 33. The one guide rail and the other guide rail may be configured to engage with each other and be able to slide relative to each other along the length direction of the guide rails.

[0060] FIG. 10 shows an example in which a temperature-controlled cooling unit 16 is provided in the upper space 51. The cooling unit 16 is configured as a horizontal plate and includes a fluid flow path therein. The downstream end of a supply pipe 17A, which supplies fluid to the flow path, and the upstream end of a discharge pipe 17B, which discharges the fluid from the flow path, are connected to the cooling unit 16. The upstream end of the supply pipe 17A and the downstream end of the discharge pipe 17B are connected to a chiller 18 equipped with a pump and a fluid temperature control mechanism. The chiller 18, supply pipe 17A, discharge pipe 17B, and the flow path in the cooling unit 16, which are temperature control units, form a fluid circulation path. A fluid adjusted to a predetermined temperature is supplied to the flow path in the cooling unit 16, and a cooling surface 19, which is the underside of the cooling unit 16, is also maintained at the predetermined temperature. This predetermined temperature is lower than the processing temperature of the wafers W in each processing module 7. The cooling surface 19 is provided above and facing the magnetic field generating surface 67.

[0061] Then, when the transfer body 61 transfers the wafer W out of the processing module 7, the transfer body 61 moves to a position where the surface of the wafer W faces the cooling surface 19 with a gap therebetween, as shown in FIG. 10 . This causes heat exchange between the wafer W and the cooling surface 19. In other words, the wafer W is radiatively cooled by the cooling surface 19. After the wafer W is cooled by, for example, the transfer body 61 remaining stationary for a predetermined time at the position where the wafer W faces the cooling surface 19, the wafer W is transferred to its next destination (the processing module 7 where the next processing will be performed, or the load lock module 25). By providing the cooling unit 16 in this manner, it is possible to more reliably prevent the surroundings of the vacuum transfer module 3 from becoming too hot.

[0062] In the configuration example of the vacuum transfer module 3 shown in FIG. 10 , the heat shield 14 extends from the cooling unit 16 in the +Y and −Y directions, respectively, and the area below the heat shield 14 and cooling unit 16 constitutes the transfer area 15 for the wafer W. Therefore, compared to the configuration example described in FIG. 2 and other figures, the configuration example shown in FIG. 10 has a configuration in which a portion of the heat shield 14 is replaced with the cooling unit 16. The entire heat shield 14 may be replaced with the cooling unit 16, rather than only a portion of the heat shield 14. In other words, the temperature adjustment unit 5 may be formed from one end of the upper space 51 in the Y direction to the other end, without providing the heat shield 14. Regarding the heat shield 14, it may be made of a material with a relatively high heat reflectivity, such as aluminum or ceramics. In the example shown in FIG. 10 , a heat shield 59 is provided to cover the floor plate 65 from above. This heat shield 59 is made of the same material as the heat shield 14, and therefore the upper surface of this heat shield 59 has a higher reflectivity than the upper surface of the floor plate 65. The heat shield 59 acts to block the radiant heat directed downward from the wafer W on the transfer body 61, more reliably preventing the surroundings of the vacuum transfer module 3 from becoming too hot. In this example, the magnetic field is formed on the heat shield 59 by passing through the heat shield 59. Therefore, the upper surface of the heat shield 59 corresponds to the magnetic field generating surface for levitating the transfer body 61. Furthermore, the embodiment described with reference to FIG. 1 and the like can also be provided with a heat shield 59, similar to the example of FIG. 10.

[0063] The vacuum transfer module 3 may be configured to include a cleaning mechanism that removes foreign matter adhering to the inner wall of the housing 31. This cleaning is performed while the vacuum transfer module 3 is not transferring wafers W, with the housing 31 maintained in a vacuum atmosphere. The mechanism that performs cleaning can have various configurations, examples of which are listed below. For the purpose of explanation, the period during which cleaning is performed may be referred to as a cleaning period, and the period during which cleaning is not performed and wafers W can be transferred may be referred to as a normal period.

[0064] The cleaning mechanism can be a gas supply mechanism that supplies gas during the cleaning period in a manner different from that during the normal period. Specifically, for example, a piping system is configured so that cleaning gas can be discharged from the gas nozzles 53 during the cleaning period instead of N2 gas. More specifically, a gas supply mechanism constituting the cleaning mechanism includes a piping connecting a cleaning gas supply source to the gas nozzles 53 and a flow rate regulator 55 installed in the piping, allowing each gas nozzle 53 to selectively supply either N2 gas or cleaning gas. The cleaning gas is a different type of gas from N2 gas, such as highly purified air known as clean dry air. When the cleaning gas is supplied to the wall surfaces within the housing 31, foreign matter adhering to the wall surfaces is peeled off and flows into the exhaust port 56 for removal.

[0065] Furthermore, the flow rate of the gas discharged during the cleaning period may be set to be greater than the flow rate of the gas discharged during the normal period. As described above, when N2 gas is discharged from each gas nozzle 53 at the first flow rate or the second flow rate during the normal period, the cleaning gas is discharged from each gas nozzle 53 at a third flow rate that is greater than the first flow rate and the second flow rate.

[0066] It should be noted that the type of gas used may not be changed between the normal period and the cleaning period, i.e., N2 gas may be used as the gas discharged at the third flow rate during the cleaning period. When the flow rate of N2 gas is changed between the normal period and the cleaning period in this way, the gas supply mechanism constituting the cleaning mechanism is configured with flow rate adjustment unit 55. Furthermore, when the gas supplied into housing 31 is switched between N2 gas and cleaning gas, each gas is discharged from gas nozzle 53 in the above description. However, a gas nozzle dedicated to cleaning gas may be provided in housing 31, and the cleaning gas may be discharged from this dedicated gas nozzle.

[0067] The cleaning mechanism may be a mechanism for supplying a cleaning liquid into the housing 31. An example of the configuration of a vacuum transfer module 3 to which such a cleaning liquid supply mechanism is applied is shown in FIG. 11. Note that some components, such as the exhaust port 56 and the heat shield 14, are omitted from the illustration to avoid complicating the illustration. For example, a plurality of cleaning liquid nozzles 72 are provided at intervals in the Y direction on the upper part of the joining circular pipe 32, and the cleaning liquid supplied from a cleaning liquid supply source 73 is discharged downward. These cleaning liquid nozzles 72 and cleaning liquid supply source 73 constitute the cleaning mechanism (cleaning liquid supply mechanism). A cleaning liquid that is unlikely to volatilize in a vacuum atmosphere is appropriately selected.

[0068] The cleaning liquid discharged from the cleaning liquid nozzle 72 is supplied to the portion of the inner circumferential surface of the joined circular pipe 32 that forms the upper space 51, and flows downward along that portion. The cleaning liquid then flows through the communicating passage 50 to the portion of the inner circumferential surface of the joined circular pipe 32 that forms the lower space 52, and toward the bottom of the joined circular pipe 32. In this example, multiple cleaning liquid nozzles 72 are provided at intervals in the Y direction. Note that the dotted arrows in Figure 11 indicate the flow of the cleaning liquid.

[0069] The joined circular pipe 32 shown in FIG. 11 is inclined, and is supported by the support 11 so that the +Y side (one end in the tube axis direction) is lower than the −Y side (the other end in the tube axis direction). Therefore, the tube axis P shown by the dashed line extends horizontally but is inclined with respect to the horizontal plane L shown by the solid line. This inclination of the tube axis P is intentionally formed so that the cleaning liquid at the bottom of the joined circular pipe 32 flows down the inner surface of the joined circular pipe 32 to the +Y side when the cleaning liquid is discharged toward the drain port 74 described below. Since this inclination is formed for the purpose of causing the cleaning liquid to flow down and is not an unavoidable inclination in manufacturing the device, the angle θ between the tube axis P and the horizontal plane L is set, for example, to 3° or more and 10° or less. To ensure high conveyance accuracy for the conveyance body 61, the magnetic field generating surface 67 of the floor plate 65 is set horizontally, as in the previous examples.

[0070] A drain port 74 is open at the bottom on the +Y side of the connecting circular pipe 32, and a drain pipe 75 is connected to the drain port 74. Valves 76 and 77 are sequentially disposed downstream of the drain pipe 75, and the downstream end of the drain pipe 75 is connected to a drain path (not shown) that is provided in the atmosphere. During the cleaning period, the opening and closing of the valves 76 and 77 is controlled so that only one of them is open. This opening and closing will be described in detail. First, valve 76 is open and valve 77 is closed, and cleaning liquid is stored in the portion of drain pipe 75 between the valves 76 and 77. Thereafter, valve 76 is closed and valve 77 is opened, and the cleaning liquid in the portion is discharged into the drain path.

[0071] Note that cleaning may be performed by supplying the cleaning liquid so that the cleaning liquid fills the entire interior of the housing 31. During the cleaning period performed using the cleaning liquid supply mechanism as described above, the valve constituting the exhaust amount adjustment unit 47 is kept closed so as to prevent the cleaning liquid from being supplied to the exhaust mechanism 48, which is a vacuum pump, via the exhaust port 56. In addition, the discharge of N2 gas from the gas nozzle 53 is also stopped.

[0072] In the vacuum transfer module 3 in which the cleaning liquid supply mechanism is thus applied as a cleaning mechanism, the housing 31 is formed from the circular pipe 33, so that the cleaning liquid supplied to the inner circumferential surface of the circular pipe 33 flows by its own weight along the inner circumferential surface to the bottom of the housing 31 where the drain port 74 is opened. This makes it possible to quickly remove the cleaning liquid from inside the housing 31 after cleaning is completed. Furthermore, as described above, in the example shown in Figure 11, the joining circular pipe 32 is provided with an inclined pipe axis P, so that the cleaning liquid flows toward the drain port 74 and is removed, thereby enabling the cleaning liquid to be removed more quickly.

[0073] Furthermore, a mechanism for ultrasonically vibrating the housing 31 may be provided as a cleaning mechanism. This ultrasonic vibration mechanism is composed of a vibrator and an oscillator that supplies power to the vibrator. The vibrator is provided on the outside of the housing 31 or on the support 11 that supports the housing 31, and vibrates the housing 31 during the cleaning period. Foreign matter adhering to the wall surface inside the housing 31 is peeled off from the wall surface by the vibration, and is carried into the exhaust port 56 by the exhaust flow inside the housing 31 and removed. Note that cleaning by this ultrasonic vibration mechanism may be used in combination with cleaning by the gas supply mechanism or cleaning liquid supply mechanism described above.

[0074] Next, a vacuum transfer module 3A, which is a variation of the vacuum transfer module 3, will be described with reference to the longitudinal side view of Figure 12, focusing on the differences from the vacuum transfer module 3. An outer pipe 81, which is a circular pipe, is provided to surround the joined circular pipe 32 of the vacuum transfer module 3A. The length of the outer pipe 81 is greater than the length of the joined circular pipe 32. The pipe axis of the outer pipe 81 is parallel to the pipe axis P of the joined circular pipe 32. Therefore, the outer pipe 81 and the joined circular pipe 32 are configured as a double pipe, and the joined circular pipe 32 forms an inner pipe. To explain the pipe axis in more detail, the pipe axis of the outer pipe 81 overlaps with the pipe axis P. In other words, the outer pipe 81 and the joined circular pipe 32 are coaxial.

[0075] The inside of the joining circular pipe 32 is configured similarly to the vacuum module 3, and therefore the magnetic field generating unit 6 is provided inside the joining circular pipe 32. The inner circumferential surface of the outer pipe 81 and the outer circumferential surface of the joining circular pipe 32 are separated from each other, forming a cylindrical gap 82 between them. Although not shown, the joining circular pipe 32 is locally supported against the inner circumferential surface of the outer pipe 81 via a support member. To ensure that the gap 82 is an airtight space, one axial end of the outer pipe 81 is connected to the load lock module 25, and the opening of the other axial end of the outer pipe 81 is blocked by a partition wall (not shown). Therefore, in this example, the circular pipes are the outer pipe 81 and the joining circular pipe 32, and the outer pipe 81 and the partition wall blocking the end of the outer pipe constitute the housing of the vacuum transfer module 3A.

[0076] An opening 83 is formed in the side wall of the outer pipe 81 at a position overlapping the opening 37 of the joining circular pipe 32. The side pipe 34 is provided on the outer peripheral surface of the outer pipe 81 instead of being attached to the joining circular pipe 32, and extends in the X direction from the periphery of the opening 83. A flange 38 at the end of the side pipe 34 is connected to the gate valve 71, similar to the flange 38 in the vacuum transfer module 3. With this configuration, the gap 82 is also filled with a vacuum atmosphere when the joining circular pipe 32 is evacuated.

[0077] In the vacuum transfer module 3A, even if the joining circular pipe 32 is heated by radiant heat from the wafer W transferred out of the processing module 7, the joining circular pipe 32 and the outer pipe 81 are in contact only at a localized position as described above. Furthermore, the gap 82 provides a vacuum insulation effect, suppressing heating of the outer pipe 81 through the joining circular pipe 32. Therefore, the vacuum transfer module 3A suppresses an increase in the ambient temperature. The vacuum transfer module 3A shown in FIG. 12 does not include the heat shield 14 and cooling unit 16 for suppressing an increase in the ambient temperature outside the module, but these may be provided to further suppress the increase in the ambient temperature.

[0078] The outer pipe 81 is also a circular pipe like the joining circular pipe 32. Therefore, the vacuum transfer module 3A also achieves the effect of the housing having no corners, as described in the description of the vacuum transfer module 3.

[0079] Next, a description will be given of the substrate processing apparatus 8 shown in Fig. 13. In the substrate processing apparatus 8, the two substrate processing apparatuses 1 described above are arranged side by side in the X direction. The vacuum transfer modules 3 of the two substrate processing apparatuses 1 are connected to each other via a vacuum transfer module 3B that is configured in a similar manner to the vacuum transfer module 3. For convenience, the two substrate processing apparatuses 1 will be referred to as 1A and 1B.

[0080] The vacuum transfer module 3B differs from the vacuum transfer module 3 in that the joining circular pipes 32 at both ends thereof are provided to extend in the X direction, and each of the pipe openings in the X direction is closed by a partition wall 39. In addition, two side pipes 34 are provided spaced apart in the X direction, and are each formed to face the +Y side.

[0081] The +Y side flange 36 of each vacuum transfer module 3 of the substrate processing apparatuses 1A and 1B does not have a partition wall 39, and this flange 36 is connected to the flange 38 of the side pipe 34 of the vacuum transfer module 3B. The floor plate 65 of each of the substrate processing apparatuses 1A and 1B extends into the housing 31 of the vacuum transfer module 3B and is connected to the floor plate 65 of the vacuum transfer module 3B. Connecting the floor plates 65 in this manner allows the transfer body 61 to move between the housing 31 of the substrate processing apparatus 1A and the housing 31 of the substrate processing apparatus 1B via the vacuum transfer module 3B. Therefore, the substrate processing apparatus 8 is configured such that the wafers W are transferred and processed sequentially between the process module 7 of the substrate processing apparatus 1A and the process module 7 of the substrate processing apparatus 1B without transferring the wafers W to the atmosphere.

[0082] As mentioned above, the circular pipe 33 of the substrate processing apparatus 1 (1A, 1B) can be a prefabricated one, and it is possible to use a prefabricated one that complies with a predetermined standard. Therefore, in the vacuum transfer module 3A, the flange 38 of the side pipe 34 connected to the circular pipe 33 can be made to conform to the specified standard. This facilitates the manufacture of the vacuum transfer module 3B. In other words, by constructing the housing 31 of the vacuum transfer module 3 from the circular pipe 33, it is possible to facilitate the manufacture of not only the housing 31 itself but also the modules to which it is connected. This also facilitates the manufacture of an apparatus in which apparatuses equipped with vacuum transfer modules 3 are connected to each other, as shown in FIG. 13.

[0083] Although the circular pipe forming the housing 31 has been illustrated as a joined circular pipe 32 in which two circular pipes 33A and 33B are connected in the axial direction, it may be formed of a single circular pipe, or three or more circular pipes connected to each other in the axial direction. When multiple circular pipes are joined together, as in joined circular pipe 32, the joined circular pipes can also be considered as a single circular pipe. Therefore, it is assumed that each of the circular pipes 33A and 33B forming the joined circular pipe 32 is provided with a side pipe 34 (substrate transport path). In this case, rather than viewing the circular pipe as having only one transport path, it is assumed that the circular pipe has multiple substrate transport paths, and the transport paths are formed at different positions in the axial direction.

[0084] Next, the vacuum transfer module 3C shown in Fig. 14 will be described. The difference from the vacuum transfer module 3 is that two floor plates 65 are provided for one circular pipe 33, and the two floor plates 65 are arranged in a V-shape when viewed in the axial direction. More specifically, the magnetic field generating surface 67 of one of the two floor plates 65 rises from the center of the left and right sides of the circular pipe 33 when viewed in the axial direction, toward the left, while the magnetic field generating surface 67 of the other floor plate 65 rises from the center of the left and right sides toward the right. In this way, the two magnetic field generating surfaces 67 are inclined relative to the horizontal plane so as to face in different directions, forming a first inclined surface and a second inclined surface.

[0085] A transfer body 61 is provided for each magnetic field generating surface 67. That is, two transfer bodies 61 are provided so that they levitate and move in the plane direction relative to the magnetic field generating surface 67, which forms the first inclined surface, and the magnetic field generating surface 67, which forms the second inclined surface. In this vacuum transfer module 3C, power is supplied to some of the many coils 66 on the floor plate 65 so that they exert a repulsive effect on the magnets 64 of the transfer body 61, and to other coils so that they exert an attractive effect on the magnets 64 of the transfer body 61. By maintaining a balance between this repulsive effect and attractive effect, the transfer body 61 can move freely in the plane direction of the magnetic field generating surface 67, which is an inclined surface, while remaining spaced apart from the magnetic field generating surface 67. The inclination of the magnetic field generating surface 67 is set to a degree that prevents the wafer W from falling off the transfer body 61. With the above configuration, it is possible to prevent the circular tube 33 from becoming larger, while improving throughput by performing transfers in parallel using two transfer bodies 61 (first transfer body and second transfer body).

[0086] Next, the vacuum transfer module 3D shown in FIG. 15 will be described. In this example, a large number of magnetic field generating plates 80, which are components of the floor plate 65, are provided so as to cover the inner circumferential surface of the circular tube 33. The magnetic field generating surface 67 of each magnetic field generating plate 80 is oriented toward the tube axis P. By providing the magnetic field generating plates 80 as described above, the magnetic field generating surface 67 of each magnetic field generating plate 80 is configured as a curved surface. When viewed collectively, the magnetic field generating surfaces 67 are formed in a circular tube shape, and the area on the inner surface of this circular tube forms the transfer region 15 for the wafer W. In other words, the transfer region 15 is also formed in a circular tube shape. Note that by providing the magnetic field generating plates 80 as described above, when the circular tube 33 and the magnetic field generating plates 80 are viewed collectively as a circular tube, the inner circumferential surface of the circular tube is the magnetic field generating surface 67.

[0087] In this vacuum transfer module 3D, the balance between the repulsive and attractive forces is maintained, allowing the transfer body 61 to move freely along the surface of the magnetic field generating surface 67 while remaining spaced apart. In other words, the transfer body 61 can move in both the circumferential and axial directions on the magnetic field generating surface 67, which is a circular tube. Although only one transfer body 61 is shown in the figure, multiple transfer bodies 61 may be provided and moved without interfering with each other. The transfer body 61 supporting the wafer W moves with the supporting surface for the wafer W facing upward to prevent the wafer W from falling. Meanwhile, the transfer body 61 not supporting the wafer W may move with the supporting surface facing upward, downward, or to the side. The vacuum transfer module 3D does not necessarily require the circular tube 33. In other words, the circular tube may be formed only by the magnetic field generating plate 80.

[0088] In the above-described substrate processing apparatus 1 and other devices, the transfer body 61 moves within the housing 31, which is in a vacuum atmosphere. However, the apparatus may be configured so that the transfer body 61 moves within the housing 31 in an atmospheric atmosphere. When the housing 31 is in an atmospheric atmosphere, the atmosphere within the processing module 7, which is connected to the housing 31 and to which the wafer W is transferred by the transfer body 61, may also be an atmospheric atmosphere. Furthermore, the substrates transferred in this technology are not limited to circular ones, but may also be rectangular. Furthermore, while the circular tubes constituting the housing 31 have been described as having a perfect circle as viewed in the axial direction, those having an elliptical wall may also be used. Furthermore, although N2 gas is described as being supplied into the housing 31, this is not limiting, and any other inert gas, such as argon, may also be used.

[0089] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive, and various omissions, substitutions, modifications, and / or combinations may be made to the above-described embodiments without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0090] P tube shaft W wafer 15 Conveying area 3 Vacuum Transfer Module 33 Circular tube 61 Carrier 67 Magnetic Field Forming Surface

Claims

1. a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with the circular tube forms a part of a housing having an internally sealed space; The housing is provided with an exhaust port for exhausting air so that the sealed space becomes a vacuum atmosphere; the magnetic field generating unit divides the inside of the circular pipe into a lower space and an upper space including the transport area, the exhaust port is provided in the circular pipe and opens into the lower space, a communication passage that communicates the upper space with the lower space; a first gas supply port that supplies a first gas to the upper space to form an airflow from the upper space to the lower space; A substrate transport device provided with:

2. 2. The substrate transfer apparatus according to claim 1, wherein the first gas is supplied and exhausted from the exhaust port so that the pressure in the upper space is higher than the pressure in the lower space.

3. In order to attach and detach the magnetic field generating unit to and from the circular pipe through a pipe opening of the circular pipe, 3. The substrate transport device according to claim 1, wherein the magnetic field generating unit and the circular tube are configured to be capable of moving relatively along the tube axis.

4. 4. The substrate transfer apparatus according to claim 3, further comprising a guide member for guiding the relative movement.

5. the first gas supply ports are provided at different positions in the axial direction of the circular pipe, the substrate transport paths, each opened and closed by a valve, open at different positions on the side surface of the circular pipe in the axial direction of the circular pipe; 5. The substrate transfer device according to claim 1, further comprising a first gas supply unit configured to supply the first gas to each of the first gas supply ports so that a flow rate of the first gas from a first gas supply port corresponding to an open valve among the plurality of valves is greater than a flow rate of the first gas from a first gas supply port corresponding to a closed valve among the plurality of valves.

6. The circular pipes include a first circular pipe and a second circular pipe each having a first flange and a second flange at an end thereof, the first flange and the second flange face each other, a first seal member and a second seal member are provided which are in close contact with the first flange and the second flange and are formed in an annular shape along the respective pipe openings of the first circular pipe and the second circular pipe, 6. A substrate transport device according to claim 1, further comprising an air flow forming unit for supplying a second gas to a gap between the first seal member and the second seal member to form an air flow along the periphery of the gap.

7. The circular pipe is a double pipe including an inner pipe and an outer pipe having an inner circumferential surface spaced apart from the outer circumferential surface of the inner pipe and surrounding the inner pipe, 7. The substrate transport device according to claim 1, wherein the magnetic field generating unit is provided inside the inner tube, and a vacuum atmosphere is formed between the inner tube and the outer tube.

8. the magnetic field generating surface is provided on the opposite side of the conveying region within the circular pipe, 8. The substrate transport device according to claim 1, further comprising a heat insulating member for blocking radiant heat from the substrate supported by the transport body to a wall of the circular pipe.

9. a cooling unit that faces the substrate supported by the transport body and adjusts the temperature by a temperature adjustment mechanism so as to cool the substrate; 9. The substrate transfer device according to claim 1, wherein the cooling unit is provided inside the circular pipe on an opposite side of the magnetic field generating surface with respect to the transfer region.

10. the circular tube forms a part of a housing having an internally sealed space; The housing is provided with an exhaust port for exhausting air so that the sealed space becomes a vacuum atmosphere; 10. The substrate transfer device according to claim 1, further comprising a cleaning mechanism for cleaning the inside of the housing, which is in a vacuum atmosphere.

11. The substrate transfer apparatus according to claim 10 , wherein the cleaning mechanism includes a gas supply mechanism that supplies gas into the housing at a flow rate greater than that during transfer of the substrate, or that supplies a different type of gas.

12. 11. The substrate transfer apparatus according to claim 10, wherein the cleaning mechanism is a cleaning liquid supply mechanism that supplies a cleaning liquid into the housing.

13. The circular pipe is inclined so that one end side in the pipe axis direction is lower than the other end side, 13. The substrate transfer device according to claim 12, wherein a drain port for discharging the cleaning liquid is formed in the bottom of the circular pipe at the one end side.

14. 14. The substrate transfer apparatus according to claim 10, wherein the cleaning mechanism includes a vibration mechanism that vibrates the housing.

15. a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with the magnetic field generating surface includes a first inclined surface and a second inclined surface that rise from the left and right central portions of the circular tube toward one of the left and right sides and the other, respectively, when viewed in the tube axis direction; The substrate transport device includes a first transport body that moves in a surface direction of the first inclined surface and a second transport body that moves in a surface direction of the second inclined surface.

16. a circular tube having a tube axis extending laterally and forming a substrate transport area therein; a magnetic field forming unit that forms a magnetic field on a surface and has a magnetic field forming surface facing the transport area; a transport body that is moved away from the magnetic field generating surface and in a direction toward the magnetic field generating surface by the magnetic field, and transports the substrate; Equipped with The substrate transport device is configured such that the magnetic field generating surface forms the inner peripheral surface of the circular pipe.

17. a step of forming a magnetic field on a magnetic field forming surface facing the transport area in a magnetic field forming unit provided in a circular tube having a tube axis extending laterally and forming a transport area for substrates therein; a step of moving a transport body in a plane direction of the magnetic field generating surface while being separated from the magnetic field generating surface by the magnetic field, thereby transporting the substrate; Equipped with the circular tube forms a part of a housing having an internally sealed space; a step of exhausting the air from an exhaust port provided in the housing to create a vacuum atmosphere in the sealed space; the magnetic field generating unit divides the inside of the circular pipe into a lower space and an upper space including the transport area, the exhaust port is provided in the circular pipe and opens into the lower space, a communication passage is provided to communicate the upper space with the lower space, A substrate transfer method comprising the steps of supplying a first gas from a first gas supply port to the upper space and forming an airflow from the upper space to the lower space.

18. a step of forming a magnetic field on a magnetic field forming surface facing the transport area in a magnetic field forming unit provided in a circular tube having a tube axis extending laterally and forming a transport area for substrates therein; a step of moving a transport body in a plane direction of the magnetic field generating surface while being separated from the magnetic field generating surface by the magnetic field, thereby transporting the substrate; Equipped with the magnetic field generating surface includes a first inclined surface and a second inclined surface that rise from the left and right central portions of the circular tube toward one of the left and right sides and the other, respectively, when viewed in the tube axis direction; the carrier comprises a first carrier and a second carrier; moving the first transport body in a plane direction of the first inclined surface; moving the second transport body in a plane direction of the second inclined surface; A substrate transport method comprising:

19. a step of forming a magnetic field on a magnetic field forming surface facing the transport area in a magnetic field forming unit provided in a circular tube having a tube axis extending laterally and forming a transport area for substrates therein; a step of moving a transport body in a plane direction of the magnetic field generating surface while being separated from the magnetic field generating surface by the magnetic field, thereby transporting the substrate; Equipped with The magnetic field generating surface is provided to form the inner peripheral surface of the circular pipe.

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