Chemical liquid supply device and chemical liquid supply method

Abstract

To provide a chemical liquid supply apparatus which is capable of highly quantitatively supplying a chemical liquid and has high safety.SOLUTION: A chemical liquid supply apparatus 10 of the invention includes: a resin drum 11 for storing a chemical liquid; a chemical liquid transfer flow path 15 for taking out the chemical liquid from the resin drum 11; and a chemical liquid supply part 18 connecting to the chemical liquid transfer flow path 15. The chemical liquid transfer flow path 15 of the chemical liquid supply apparatus 10 of the invention also includes a non-positive displacement type pump 16, and the resin drum 11 includes pressurized gas supply means 14 from which the chemical liquid can be taken out by pressurizing with gas the interior of the resin drum, and / or the chemical liquid transfer flow path 15 includes a positive displacement type pump 17 on a downstream side of the non-positive displacement type pump 16.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a chemical liquid supplying device and a chemical liquid supplying method. [Background technology]

[0002] Devices that supply chemical solutions at fixed quantities are used in various technical fields. For example, for the synthesis of pharmaceuticals, it is necessary to supply chemical solutions at highly controlled flow rates. Furthermore, for polishing slurries, cleaning solutions, plating solutions, and other chemical solutions used in semiconductor manufacturing processes, it is necessary to supply chemical solutions at fixed quantities with highly precise control of the liquid volume.

[0003] For example, with regard to polishing slurry used in semiconductor manufacturing processes and the like, Patent Document 1 discloses a polishing liquid supply device capable of supplying liquid at a very high fixed rate.

[0004] While conventional supply devices using diaphragm pumps have the problem of pulsation occurring when supplying chemical liquids, the supply device described in Patent Document 1 does not use a diaphragm pump, but instead pressurizes a drum containing the chemical liquid with an inert gas to extract the chemical liquid from the drum.A chemical supply device configured in this way can supply liquid at a highly constant rate because there is no pulsation caused by the diaphragm pump. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2021-8003 Summary of the Invention [Problem to be solved by the invention]

[0006] In the device described in Patent Document 1, the drum is pressurized with inert gas, which could lead to the drum exploding. Patent Document 1 discloses a means to prevent this risk by pressing down the drum with a top and bottom plate, but if the internal pressure of the drum becomes too high, the drum appears to be expanding, which can be dangerous.

[0007] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a chemical solution supplying device and a chemical solution supplying method that are capable of supplying a highly constant amount of chemical solution and are highly safe. [Means for solving the problem]

[0008] The present inventors have found that the above problems can be solved by the present invention, which includes the following embodiments.

[0009] In one embodiment, the chemical solution supply device of the present invention includes a resin drum for storing a chemical solution, a chemical solution transfer flow path for extracting the chemical solution from the resin drum, and a chemical solution supply unit connected to the chemical solution transfer flow path, the drug solution transport channel has a non-positive displacement pump; The resin drum has a pressurized gas supply means that can extract the chemical solution by pressurizing the inside of the drum with gas, and / or the chemical solution transfer flow path has a positive displacement pump downstream of the non-positive displacement pump.

[0010] In one embodiment, the non-positive displacement pump of the drug delivery device is a magnetically levitated centrifugal pump.

[0011] In one embodiment, the resin drum of the chemical liquid supply device has pressurized gas supply means.

[0012] In one embodiment, the drug transport channel of the drug supply device includes a positive displacement pump.

[0013] In one embodiment, the present invention relates to a chemical mechanical polishing system including a chemical liquid supply device and a chemical mechanical polishing device that uses a polishing pad and a polishing slurry containing the chemical liquid supplied by the chemical liquid supply device.

[0014] In one embodiment, the present invention is a chemical liquid supplying method for supplying a chemical liquid using a chemical liquid supplying device in which the resin drum has a pressurized gas supply means, Pressurizing the resin drum with gas to remove the chemical solution from inside the resin drum; and The chemical solution is transferred to the chemical solution supply unit using a non-positive displacement pump of the chemical solution transfer flow path. Includes:

[0015] In one embodiment, the present invention provides a chemical solution supplying method using a chemical solution supplying device, in which the chemical solution transfer flow path of the chemical solution supplying device has a positive displacement pump, removing the chemical solution from inside the resin drum using the positive displacement pump of the chemical solution transfer flow path; Stopping the operation of the positive displacement pump before the chemical solution reaches the positive displacement pump of the chemical solution transfer flow path; and transferring the chemical solution to the chemical solution supply unit using the non-positive displacement pump of the chemical solution transfer flow path; Includes:

[0016] In one embodiment, the present invention is a method for chemical mechanical polishing of a substrate, comprising supplying a chemical solution using the chemical solution supply method of the above embodiment, and polishing the substrate using a polishing pad and a polishing slurry containing the supplied chemical solution.

[0017] In one embodiment, the invention is a method for chemical mechanical polishing of a substrate, wherein the substrate is a semiconductor substrate. [Effects of the Invention]

[0018] According to the present invention, it is possible to provide a highly safe chemical liquid supplying device and a chemical liquid supplying method that can supply a highly constant amount of chemical liquid. [Brief explanation of the drawings]

[0019] [Figure 1] FIG. 1 shows one embodiment of the device of the present invention. [Figure 2] FIG. 2 shows one embodiment of a resin drum that can be used in the apparatus of the present invention. [Figure 3] FIG. 3 shows one embodiment of the chemical mechanical polishing apparatus of the present invention. [Figure 4] FIG. 4 is a diagram showing the detailed configuration of the mixing unit 50 of FIG. [Figure 5] FIG. 5 is a diagram showing the detailed configuration of the mixing unit 50 of FIG. [Figure 6] FIG. 6 is a diagram showing the control of the drum 11 of the mixing unit 50 of FIG. [Figure 7] FIG. 7 is a diagram showing a schematic configuration of a conventional CMP system. DETAILED DESCRIPTION OF THE INVENTION

[0020] 1 shows a schematic diagram of one embodiment of the device of the present invention. Chemical solution supplying device 10 of the present invention includes resin drum 11 for storing the chemical solution, chemical solution transfer flow path 15 for extracting the chemical solution from resin drum 11, and chemical solution supply unit 18 connected to chemical solution transfer flow path 15. Chemical solution transfer flow path 15 of chemical solution supplying device 10 of the present invention includes non-positive displacement pump 16, and resin drum 11 includes pressurized gas supply means 14 that can extract the chemical solution by pressurizing its interior with gas, and / or chemical solution transfer flow path 15 includes positive displacement pump 17 downstream of non-positive displacement pump 16.

[0021] In this embodiment, the presence of a non-positive displacement pump 16, such as a centrifugal pump, in the middle of supplying the chemical solution from the resin drum 11 to the chemical solution supply unit 18 eliminates the need to apply high pressure to the resin drum 11, significantly reducing the risk of the drum exploding. That is, in this embodiment, it is not necessary to apply pressure to the resin drum 11 to send the chemical solution from the resin drum 11 to the chemical solution supply unit 18; it is sufficient to apply pressure to send the chemical solution from the resin drum 11 to the non-positive displacement pump 16. In this case, the chemical solution that has reached the non-positive displacement pump 16 is sent to the chemical solution supply unit 18 by the non-positive displacement pump 16. Instead of pressurizing the resin drum 11, a positive displacement pump 17, such as a diaphragm pump, may be disposed downstream of the non-positive displacement pump 16, and the chemical solution from the resin drum 11 may be sent to the non-positive displacement pump 16 by reducing the pressure in the chemical solution transfer flow path 15 using the positive displacement pump 17.

[0022] In this specification, the chemical liquid is not particularly limited in type and can be a chemical liquid such as a polishing liquid, cleaning liquid, plating liquid, or pharmaceutical raw material, or one of its components. For example, a polishing liquid is a liquid prepared by mixing a slurry, ultrapure water, chemicals, and an oxidizing agent such as hydrogen peroxide in a predetermined ratio. Slurries include those containing abrasive grains, alkaline slurries containing SiO2, neutral slurries containing CeO2, and acidic slurries containing Al2O3. Chemicals include silica, melonic acid, and citric acid. The active ingredients of the slurry and chemicals can be determined depending on the application of the device, for example, when using the device in a polishing system, depending on the substrate to be polished, the polishing shape, etc.

[0023] Resin drum 11 , within There are no particular limitations on the wall as long as it is not dissolved in the chemical solution, and at least a part of the drum may be made of metal, etc.

[0024] As shown in FIG. 2, for example, the resin drum 11 can have a top plate 31, a bottom plate 32, and a side plate 33 interposed therebetween. The interior of the resin drum 11 is airtight. Above the top plate 31 and below the bottom plate 32, there are provided drum support units, namely, a SUS plate 311, a PVC plate 312, a PVC plate 321, and a SUS plate 322. The SUS plate 311 and the PVC plate 312, which are first plates, are disposed on the top plate 31, and the PVC plate 321 and the SUS plate 322, which are second plates, are disposed below the bottom plate 32. A load cell 12 is disposed below the SUN plate 322.

[0025] The SUS plate 312 and PVC plate 311 hold down the top plate 31 from above, and the PVC plate 321 and SUS plate 322 hold down the bottom plate 32 from below, playing a role in preventing accidental explosion due to pressure inside the resin drum 11. The drum 11 is provided with an air cylinder 38. The air cylinder 38 can lift the SUS plate 312 and PVC plate 311 upward and separate them from the top plate 31.

[0026] However, the configuration of resin drum 11 as shown in FIG. 2 is not necessarily required in an embodiment in which, for example, positive displacement pump 17 is used downstream of non-positive displacement pump 16, since the risk of an accidental explosion is extremely low. In such an embodiment, a resin drum with a simpler configuration can be used.

[0027] The apparatus 10 of the present invention may be provided with a pressurized gas supply means 14. In such an embodiment, there is no need to install a positive displacement pump 17, and it is preferable because there is no need to perform the complicated control required when a positive displacement pump 17 is used.

[0028] The pressurized gas supply means 14 can apply gas pressure to the inside of the resin drum 11, thereby extracting the liquid chemical into the liquid chemical transfer flow path 15. The gas used here is usually an inert gas such as nitrogen or argon. The valve 14a of the pressurized gas supply means 14 can be controlled by a control device such as a PLC (Programmable Logic Controller), allowing gas to be supplied to the resin drum 11 at the required timing.

[0029] The chemical liquid transfer flow path 15 is a flow path for taking out the chemical liquid from the resin drum 11 and sending the chemical liquid to the chemical liquid supply unit 18 , and has a non-positive displacement pump 16 .

[0030] Examples of non-positive displacement pumps 16 include centrifugal pumps such as volute pumps and turbine pumps; propeller pumps such as axial flow pumps and mixed flow pumps; and viscous pumps such as cascade pumps. These pumps cannot reduce the pressure inside chemical transfer flow path 15 to a level sufficient to extract a large amount of chemical from resin drum 11, but once the chemical reaches the pump, they can deliver the chemical to chemical supply section 18. On the other hand, these pumps are less likely to cause cavitation in the chemical, so they can deliver the chemical without adversely affecting the entire device. It is preferable that the interiors of these pumps also have a resin surface.

[0031] Among non-positive displacement pumps 16, it is preferable to use a centrifugal pump, and in particular a magnetically levitated centrifugal pump, because there is little risk of cavitation. A magnetically levitated centrifugal pump drives the pump impeller based on the principle of magnetic levitation; specifically, the pump impeller floats in a non-contact state within a sealed casing and is driven by the rotating magnetic field of a motor. Because this pump does not have an internal rotating shaft, it can run idly even when there is no chemical solution present, and it is preferable because there is little risk of impurities being mixed into the chemical solution.

[0032] Chemical solution transfer flow path 15 may have a positive displacement pump 17 downstream of non-positive displacement pump 16. The positive displacement pump 17 reduces the pressure inside chemical solution transfer flow path 15, allowing the chemical solution to be extracted from resin drum 11. In such an embodiment, there is no need to install pressurized gas supply means 14 on resin drum 11, and there is no need to pressurize resin drum 11, making it extremely safe and therefore preferable.

[0033] For example, when using positive displacement pump 17, valve 18a located between chemical solution transfer flow path 15 and chemical solution supply unit 18 is closed, and valve 15a located upstream of positive displacement pump 17 is opened. This reduces the pressure inside chemical solution transfer flow path 15, causing the chemical solution to be extracted from resin drum 11 and reach non-positive displacement pump 16. Once the chemical solution reaches non-positive displacement pump 16, positive displacement pump 17 is stopped, valve 15a is closed, and valve 18a is opened. This prevents the chemical solution from reaching positive displacement pump 17 while it is in operation, allowing the chemical solution to be sent to chemical solution supply unit 18. If the chemical solution enters positive displacement pump 17 while it is in operation, pulsation may occur when the chemical solution is supplied, and depending on the chemical solution, cavitation may occur. Therefore, it is preferable to control the chemical solution so that it does not enter positive displacement pump 17 while it is in operation.

[0034] During these operations, the non-positive displacement pump 16 may be operated constantly or only when necessary. These operations can be automatically controlled by a PLC connected to these devices.

[0035] Examples of the positive displacement pump 17 include reciprocating pumps such as piston pumps, plunger pumps, and diaphragm pumps; and rotary pumps such as gear pumps, screw pumps, and vane pumps, with a diaphragm pump being particularly preferred.

[0036] The chemical supply unit 18 is a part that supplies the chemical to the place where it is used, and can be, for example, a connection part to a tank for mixing the chemical with other chemicals, a connection part to a chemical preparation flow path, etc.

[0037] The chemical liquid supply method of the present invention is a method for supplying a chemical liquid using the above-described device. In one embodiment, this chemical liquid supply method supplies a chemical liquid using a chemical liquid supply device 10 in which a resin drum 11 has a pressurized gas supply means 14. This method includes pressurizing the resin drum 11 with a gas to remove the chemical liquid from inside the resin drum 11, and transferring the chemical liquid to a chemical liquid supply unit 18 using a non-positive displacement pump 16 in a chemical liquid transfer flow path 15.

[0038] In the chemical solution supply method of this embodiment, the presence of non-positive displacement pump 16 in chemical solution transfer flow path 15 eliminates the need to increase the pressure applied to resin drum 11, and therefore significantly reduces the risk of resin drum 11 exploding. In addition, there is no need to use positive displacement pump 17 in chemical solution transfer flow path 15, and the complicated control required when positive displacement pump 17 is used can be avoided.

[0039] In another embodiment, the chemical solution supplying method of the present invention supplies the chemical solution using chemical solution supplying device 10 in which chemical solution transfer flow path 15 has positive displacement pump 17. This method includes removing the chemical solution from inside resin drum 11 using positive displacement pump 17 of chemical solution transfer flow path 15, stopping the operation of positive displacement pump 17 before the chemical solution reaches positive displacement pump 17 of chemical solution transfer flow path 15, and transferring the chemical solution to chemical solution supply unit 18 using non-positive displacement pump 16 of chemical solution transfer flow path 15.

[0040] In the chemical liquid supply method of this embodiment, there is no need to install pressurized gas supply means 14 on resin drum 11, and there is no need to pressurize resin drum 11, so it is extremely safe and is therefore preferable.

[0041] The chemical solution supply method of the present invention can be implemented by detecting the state using various sensors and instruments, and then using a control device such as a PLC.

[0042] The respective components of the chemical liquid supplying device of the present invention can be referenced to the respective components described in relation to the chemical liquid supplying method of the present invention.Furthermore, the respective components of the chemical liquid supplying device of the present invention can be referenced to the respective components used in the chemical liquid supplying method of the present invention.

[0043] The chemical solution supplying device 10 of the present invention is useful in all technical fields requiring the supply of chemical solutions at a highly constant rate, and can be used to supply chemical solutions such as polishing solutions, cleaning solutions, plating solutions, and pharmaceutical raw materials. Therefore, the present invention also relates to polishing systems, cleaning systems, plating processing systems, and pharmaceutical manufacturing systems that include the chemical solution supplying device 10. For example, when the present invention is applied to a chemical mechanical polishing system for polishing substrates, the system is extremely safe and supplies the chemical solution for the polishing slurry at a highly constant rate, enabling the stable production of high-quality polished substrates, and is particularly useful when the substrate is a semiconductor substrate.

[0044] FIG. 3 shows a chemical mechanical polishing (CMP) system described in Patent Document 1, which uses a chemical liquid supply device 10 of the present invention.

[0045] This CMP system 1 can be used in a polishing step in a semiconductor manufacturing process, etc. The CMP system 1 includes a polishing liquid supply device 2 and a CMP polishing device 8.

[0046] The polishing liquid supplying device 2 is equipped with the chemical liquid supplying device 10 of the present invention, which is a supplying device 10 for supplying chemicals. CHM , a supply device 10 for supplying a slurry SLR , a supply device 10 for supplying hydrogen peroxide solution H2O2 It is used as.

[0047] The configuration of a CMP polishing apparatus 8 is generally similar to that of a known polishing apparatus 8 as shown in FIG. 7. As shown in FIG. 7, the CMP system comprises a polishing apparatus 8 and a polishing liquid supply apparatus 9. A wafer 88 to be polished is attached to an attachment plate 82 on the underside of a head 81 of the polishing apparatus 8. The head 81 presses the wafer 88 against a polishing pad 84 on a surface plate 83. A tank 91 of the polishing liquid supply apparatus 9 stores a polishing liquid, which is a slurry diluted with ultrapure water or chemicals. The polishing liquid in the tank 91 of the polishing liquid supply apparatus 9 is sucked out by a pump 92, and the polishing liquid is dropped onto the polishing pad 84 from the tip of a nozzle 85 while the head 81 and surface plate 83 are rotated. This polishes the surface of the wafer 88 by a mechanical action of the wafer 88 sliding on the polishing pad 84 while being pressed against the polishing pad 84, and a chemical reaction action of the wafer 88 coming into contact with the slurry in the abrasive.

[0048] 3, a liquid inlet 89 of the CMP polishing apparatus 8 is connected to a liquid outlet 79 of the polishing liquid supply apparatus 2. The CMP polishing apparatus 8 polishes a wafer 88 that is an object to be polished. The polishing liquid supply apparatus 2 supplies a polishing liquid to the CMP polishing apparatus 8.

[0049] The CMP polishing apparatus 8 includes a mixing unit 50 of the polishing liquid supply device 2. CHM , 50 SLR , and 50 H2O2 Operators are provided for setting target values ​​for the flow rate and concentration at the flow rate detection points and concentration detection points before and after the polishing liquid supply device 2. When the target values ​​for the flow rate or concentration are set in the CMP polishing device 8, the CMP polishing device 8 supplies a setting signal indicating the set flow rate or concentration to the polishing liquid supply device 2.

[0050] The polishing liquid supply device 2 includes a PLC 70, an ultrapure water inlet 29 connected to an external ultrapure water supply source, and a supply device 10 for supplying ultrapure water. DIW , supply devices for supplying chemicals 10 CHM , a supply device 10 for supplying a slurry SLR , a supply device 10 for supplying hydrogen peroxide solution H2O2The chemical supply device 10 also has a blending flow path 40 in which four types of liquid, ultrapure water, chemical, slurry, and hydrogen peroxide solution, are blended. CHM The chemicals are stored in multiple drums. CHM , drum 11 CHM Load cell 12 to detect the weight of CHM , drum 11 CHM Pressure sensor 13 to detect pressure inside CHM a slurry supply device 10 SLR and hydrogen peroxide water supply device 10 H2O2 also has a similar configuration.

[0051] The blending flow path 40 is disposed immediately before the liquid delivery port 79 leading to the CMP polishing device 8. The blending flow path 40 communicates with each supply unit 18 of each supply device 10. The blending flow path 40 is provided with a flow controller 65, flow rate sensors 61 and 63, and a concentration sensor 64 for each flow path.

[0052] Each flow controller 65 is a unit that integrates a flow sensor 62 and a flow control valve 26. Each flow controller 65 can serve as a flow control means that adjusts the flow rate of the liquid from each supply device 10 to the blend flow path 40.

[0053] Ultrapure water supply device 10 DIW The device 10 is provided with a low-pressure valve 21 (precision regulator). DIW The flow rate of ultrapure water in is kept constant (for example, 1 liter / min).

[0054] Ultrapure water supply device 10 DIW Mixing Unit 50 CHM It is connected to the inlet F1 of the chemical supply device 10. CHM Mixing Unit 50 CHM It is connected to the inlet F2 of the mixing unit 50 CHM The outlet F3 of the slurry is mixed with the mixing unit 50 SLR It is connected to the inlet F1 of the mixing unit 50 SLRThe outlet F3 of the hydrogen peroxide mixing unit 50 H2O2 It is connected to the inlet F1 of the mixing unit 50 H2O2 The outlet F3 is connected to the liquid delivery outlet 79. Each mixing unit may be a static mixer or an in-line mixer, as shown in FIG.

[0055] FIG. 4(A) shows the mixing unit 50 CHM , 50 SLR , 50 H2O2 4(B) is a view of FIG. 4(A) as seen from the direction of arrow B. FIG. 4(C) is a view showing the inside of FIG. 4(B). FIG. 5 is a partial cross-sectional view of FIG. 4(B). CHM , 50 SLR , 50 H2O2 has a housing HZ with two inlets F1 and F2 and one outlet F3, and a stirring screw SCR housed within the housing HZ.

[0056] The body of the housing HZ is the supply device 10 DIW , 10 CHM , 10 SLR , 10 H2O2 The housing HZ is a hollow cylinder with a diameter roughly the same as or slightly larger than the piping. There is an inlet F1 at one end of the body of the housing HZ in the direction of extension, and an outlet F3 at the other end. There is an inlet F2 near the inlet F1 on the side of the body of the housing HZ. The inlet F2 is connected to the inside of the body of the housing HZ.

[0057] The inlet F1 communicates with a pipe HK1 inside the housing HZ. The tip of the pipe HK1 is connected to the stirring screw SCR. The inlet F2 communicates with a pipe HK2 inside the housing HZ. As shown in FIG. 5, two widthwise sides of the lower end of the pipe HK2 abut against the inner peripheral surface of the pipe HK1. Two liquid discharge ports HL1 and HL2 are located at the bottom of the pipe HK2 and at two positions slightly above the bottom. Within the pipe HK1, the two liquid discharge ports HL1 and HL2 face toward the stirring screw SCR.

[0058] The stirring screw SCR has N (N is a natural number greater than or equal to 2; in the example of FIG. 4(C) , N=5) twist vanes VL-k (k=1 to N) arranged at intervals on a shaft AXS. The shaft AXS is supported at the inlet F1 and outlet F3 of the housing HZ. The twist vanes VL-k are twisted half a turn (180 degrees) along the outer circumferential surface of the shaft AXS. The multiple twist vanes VL-k (k=1 to N) are arranged with a phase shift of 90 degrees, and adjacent twist vanes VL-k are shifted by 90 degrees and are perpendicular to each other. The intervals between adjacent twist vanes VL-k are equal. The intervals between adjacent twist vanes VL-k are shorter than the dimension (front-to-back width) of the twist vane VL-k itself.

[0059] Mixing Unit 50 CHM The inlet F1 and the inlet F2 of the mixing unit 50 CHM The two types of liquids (ultrapure water and chemicals) that flow into the mixing unit 50 CHM The two liquids are mixed while being stirred inside the mixing unit 50. CHM The same applies to the other mixing units.

[0060] In FIG. 3, the flow rate sensor 61 CHM The mixing unit 50 in the blending flow path 40 CHM The flow rate sensor 62 detects the flow rate per unit time of the liquid (ultrapure water) at a position immediately before the inlet F1 and outputs a flow rate detection signal. CHM The mixing unit 50 in the blending flow path 40 CHM The flow rate sensor 63 detects the flow rate per unit time of the liquid (chemical) at a position immediately before the inlet F2 and outputs a flow rate detection signal. CHM The mixing unit 50 in the blending flow path 40 CHM The concentration sensor 64 detects the flow rate per unit time of the liquid (a liquid made by mixing ultrapure water and chemicals) located immediately after the outlet F3 and outputs a flow rate detection signal. CHM The mixing unit 50 in the blending flow path 40 CHMThe turbidity of the liquid at a position immediately after the outlet F3 is detected as the concentration of the liquid, and a concentration detection signal is output. The same applies to the other flow rate sensors.

[0061] The PLC 70 is a device that serves as a control means for the polishing liquid supply device 2. The PLC 70 controls the flow rate of the liquid in the preparation flow path 40 by controlling the flow rate and concentration of the liquid. CHM , 65 SLR , 65 H2O2 a first controller for controlling the operation of the drums 11 for each type of liquid; CHM , 11 SLR , 11 H2O2 Depending on the storage volume, drum 11 CHM , 11 SLR , 11 H2O2 and supply device 10 CHM , 10 SLR , 10 H2O2 The PLC 70 may be common to the PLCs of the devices shown in FIG. 1, or may be provided separately.

[0062] More specifically, in the first control, the PLC 70 controls the flow controller 65 CHM Flow control valve 26 CHM The opening of the flow sensor 61 CHM , 62 CHM , 63 CHM and the target value of the flow rate indicated by the setting signal given from the CMP polishing device 8, and the concentration sensor 64 CHM The opening is determined based on the relationship between the detection signal and the target value of the concentration indicated by the setting signal given from the CMP polishing device 8, and the flow rate sensor 61 CHM , 62 CHM , 63 CHM and the concentration sensor 64 CHM flow control valve 26 based on the detection signal CHM Correct the opening of the valve.

[0063] Specifically, the PLC 70 includes a flow sensor 61 CHM , 62 CHM , 63 CHMIf the flow rate indicated by the detection signal is greater than the target value of the flow rate and the difference is equal to or greater than a predetermined value, the flow rate adjusting valve 26 CHM The flow controller 65 outputs a control signal to instruct the flow controller 65 to reduce the opening of the valve 65. CHM The PLC 70 also supplies the flow rate sensor 61 CHM , 62 CHM , 63 CHM If the flow rate indicated by the detection signal is smaller than the target value and the difference is equal to or greater than a predetermined value, the flow rate adjusting valve 26 CHM The flow controller 65 CHM Supply to.

[0064] In addition, the PLC70 is equipped with a concentration sensor 64 CHM When the concentration indicated by the detection signal is greater than the target concentration and the difference is equal to or greater than a predetermined value, the flow rate adjusting valve 26 CHM The flow controller 65 outputs a control signal to instruct the flow controller 65 to reduce the opening of the valve 65. CHM The PLC 70 also supplies the concentration sensor 64 CHM If the concentration indicated by the detection signal is smaller than the target value and the difference is equal to or greater than a predetermined value, the flow rate adjusting valve 26 CHM The control signal is supplied to increase the opening of the valve.

[0065] In the same manner, the PLC 70 corrects the opening degree of the flow rate adjustment valve of the other flow controllers.

[0066] In the second control, the PLC 70 controls a plurality of drums 11 in which chemicals are stored. CHM Pressure Sensor 13 CHM Based on the detection signal, drum 11 CHM The pressure of the load cell 12 CHM Based on the detection signal, drum 11 CHM As shown in FIG. 6, the PLC 70 calculates the amount of chemical stored in a plurality of drums 11. CHM Of which, chemical supply equipment 10 CHM Drum 11 communicating with CHM When the amount of liquid stored in the drum (drum 1 in the example of Figure 6) reaches a predetermined value TH LQWhen it falls below 1, that drum 11 CHM The valve of the first tube is closed to supply the chemicals to the chemical supply device 10. CHM and release the communication with drum 11. CHM The valve of the second tube is closed to discharge the water into the drum 11. CHM At this time, the pressure of the other drum 11 is stopped. CHM The amount of liquid stored exceeds a predetermined amount, and the internal pressure exceeds a predetermined value TH PR Drum 1 is over 11 CHM (In the example in Figure 5, select Drum 2, and then select Drum 11. CHM The valve of the first tube is opened to supply the chemicals to the chemical supply device 10. CHM At this time, another drum 11 CHM The amount of liquid stored exceeds a predetermined amount, and the internal pressure exceeds a predetermined value TH PR Drum 11 not reached 1 CHM (In the example in Figure 6, select Drum 3, and then select Drum 11. CHM The valve of the second tube is opened to discharge the drum 11 CHM pressurized gas supply means 14 CHM Nitrogen is discharged from drum 11 CHM Pressurization begins.

[0067] Similarly, the PLC70 is a pressure sensor 13 SLR , load cell 12 SLR Based on the detection signal, the drum 11 in which the slurry is stored is SLR and a slurry supply device 10 SLR and pressure sensor 13 H2O2 , load cell 12 H2O2 Based on the detection signal, the drum 11 in which the hydrogen peroxide solution is stored is H2O2 and hydrogen peroxide supply device 10 H2O2 Controls communication with [Explanation of symbols]

[0068] 1. Chemical Mechanical Polishing System 2 Polishing liquid supply device 8 Chemical mechanical polishing equipment 11 Drums 14 Pressurized gas supply means 15 Chemical transport channel 16 Non-positive displacement pump 17 positive displacement pump 18 Chemical Solution Supply Unit 14a, 15a, 18a valves 21 Low pressure valve 26 Flow control valve 29 Ultrapure water inlet 31 Top plate 32 Bottom plate 33 Side panel 38 Air Cylinder 40 Mixing channel 50 Mixing Unit 61, 62, 63 Flow sensors 64 Concentration sensor 65 Flow Controller 70 PLC 79 Outlet 81 head 83 Surface Plate 84 Polishing Pad 85 nozzles 88 wafers 89 Liquid inlet 91 Tank 92 Pump 311 312 321 322 board

Claims

1. A chemical mechanical polishing system including a chemical mechanical polishing apparatus using a polishing pad and a polishing slurry containing a chemical liquid supplied from a chemical liquid supply unit of a chemical liquid supply apparatus, The chemical solution supply device includes: A chemical liquid supply device comprising: a resin drum for storing a chemical liquid; a chemical liquid transfer flow path for extracting the chemical liquid from the resin drum and sending the chemical liquid to a chemical liquid supply unit; and a chemical liquid supply unit connected to the chemical liquid transfer flow path, the drug solution transport channel has a non-positive displacement pump; the resin drum has a pressurized gas supply means for drawing the chemical liquid to the non-positive displacement pump through the chemical liquid transfer flow path by pressurizing the interior of the resin drum with gas, and the non-positive displacement pump of the chemical liquid transfer flow path is a non-positive displacement pump for sending the chemical liquid drawn to the non-positive displacement pump to the chemical liquid supply unit; Chemical mechanical polishing system.

2. The chemical mechanical polishing system of claim 1 , wherein the non-positive displacement pump is a magnetically levitated centrifugal pump.

3. 2. The chemical mechanical polishing system of claim 1, wherein the resin drum has a top plate, a bottom plate, and side plates interposed therebetween, and has plates above the top plate and below the bottom plate to prevent accidental explosion due to pressure.

4. A method for chemical mechanical polishing of a substrate, comprising: supplying a chemical solution from a chemical solution supply unit by the following chemical solution supply method; and polishing the substrate with a polishing pad and a polishing slurry containing the supplied chemical solution, The chemical solution supply method includes: a chemical supply device including a resin drum for storing the chemical, a chemical transfer flow path for extracting the chemical from the resin drum and sending the chemical to the chemical supply part, and the chemical supply part connected to the chemical transfer flow path, and supplying the chemical from the resin drum to the chemical supply part; the drug solution transport channel has a non-positive displacement pump; the resin drum has a pressurized gas supply means for drawing the chemical liquid through the chemical liquid transfer flow path to the non-positive displacement pump by pressurizing the interior of the resin drum with gas, the non-positive displacement pump of the chemical liquid transfer flow path is a non-positive displacement pump for sending the chemical liquid drawn to the non-positive displacement pump to the chemical liquid supply unit, and Pressurizing the resin drum with gas using the pressurized gas supply means, and extracting the chemical solution from the top plate side of the resin drum through the chemical solution transfer flow path to the non-positive displacement pump; and The chemical solution is transferred to the chemical solution supply unit using a non-positive displacement pump of the chemical solution transfer flow path. Including, Chemical mechanical polishing method.

5. 5. The chemical mechanical polishing method according to claim 4, wherein the resin drum is pressurized to a pressure sufficient to pump the chemical solution to the non-positive displacement pump but lower than the pressure required to pump the chemical solution to the chemical solution supply section.

6. The chemical mechanical polishing method of claim 4 , wherein the substrate is a semiconductor substrate.

Images