Substrate processing apparatus and method for cleaning processing cup

Abstract

To provide a substrate processing apparatus including a cup cleaning configuration that can efficiently clean the entire circumference of the cup by a small number of cleaning nozzles.SOLUTION: A processing unit 5 has a rotary holding member 15 that rotates the substrate W around a predetermined rotation axis A1 while holding the substrate W, a cylindrical processing cup 16 that surrounds the rotary holding member 15, and a cup cleaning nozzle 28 that is installed below the rotary holding member 15 and injects cleaning solution in a fan shape toward the processing cup 16 in plan view. A plurality of cup cleaning nozzles 28 are arranged at a predetermined distance in the radial direction from the rotation axis A1 and at equal intervals in the circumferential direction around the rotation axis A1. Each of the cup cleaning nozzles 28 has the center of the cleaning solution jet facing a predetermined angle in the circumferential direction with respect to the radial direction.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus for processing substrates. The present invention also provides a method for cleaning a processing cup in the substrate processing apparatus. Substrates that can be processed by the substrate processing apparatus include, for example, semiconductor wafers, FPD (Flat Panel Display) substrates such as liquid crystal display devices and organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, photomask substrates, ceramic substrates, and solar cell substrates. [Background technology]

[0002] The following Patent Document 1 discloses a substrate processing apparatus having a cleaning liquid discharge port provided on the side surface of a spin base, and configured to clean a cup.

[0003] Patent Document 2 listed below discloses a substrate processing apparatus in which a cleaning nozzle is provided below a spin base, and a cleaning liquid is sprayed obliquely upward to clean the inner peripheral surface of a collection cup.

[0004] Patent Document 3 listed below discloses a substrate processing apparatus having a configuration in which a disk-shaped cup cleaning member is provided with a plurality of holes, and cups are cleaned through the holes. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2021-44494 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-56431 [Patent Document 3] Japanese Patent Application Publication No. 2017-92244 Summary of the Invention [Problem to be solved by the invention]

[0006] In the cup cleaning structures described in Patent Documents 1 to 3, the distance from the cleaning liquid outlet to the cup is short. Therefore, in the configuration of Patent Document 1, the spin base must be rotated to clean the entire circumference of the cup. In addition, in the configurations of Patent Documents 2 and 3, many nozzles or outlets are required to clean the entire circumference of the cup.

[0007] Therefore, one object of the present invention is to provide a substrate processing apparatus including a cup cleaning configuration that can efficiently clean the entire circumference of a cup with a small number of cleaning nozzles, and a method for cleaning a processing cup in a substrate processing apparatus. [Means for solving the problem]

[0008] One embodiment of the present invention provides a substrate processing apparatus for processing a substrate, comprising: a rotating holding member for holding a substrate and rotating the substrate around a predetermined rotation axis; a cylindrical processing cup surrounding the rotating holding member; and a cup cleaning nozzle provided below the rotating holding member and spraying a cleaning liquid in a fan shape toward the processing cup in a plan view, wherein a plurality of the cup cleaning nozzles are arranged at positions spaced a predetermined radial distance from the rotation axis and equally spaced circumferentially around the rotation axis, and the center of spray of the cleaning liquid from each cup cleaning nozzle is oriented in a direction deflected by a predetermined angle circumferentially from the radial direction.

[0009] In this substrate processing apparatus, the cup cleaning nozzle sprays cleaning liquid toward the processing cup in a fan-shaped pattern in a plan view, thereby cleaning a relatively wide area of ​​the inner surface of the processing cup. Furthermore, since multiple cup cleaning nozzles are arranged at equal circumferential intervals below the rotating holding member, the apparatus can be designed to thoroughly clean the entire inner surface of the processing cup. By orienting the spray center of each cup cleaning nozzle at a predetermined angle circumferentially relative to the radial direction in a plan view, the spray range of each cup cleaning nozzle, in other words, the cleaning area of ​​the inner surface of the processing cup, can be expanded. Therefore, a relatively small number of cup cleaning nozzles can be used to thoroughly clean the entire inner surface of the processing cup.

[0010] The processing cup of this substrate processing apparatus may include a cylindrical guard that catches liquid splashed outward from the substrate being rotated by the rotatable holding member, and a cup that collects the liquid that is caught by the cylindrical guard and guided downward. In this case, it is desirable that the multiple cup cleaning nozzles each face the inner circumferential surface of the cylindrical guard at a fixed interval (for example, facing each other horizontally). This allows the inner circumferential surface of the cylindrical guard to be cleaned without any gaps in the circumferential direction, and the cleaning liquid flows downward along the inner surface of the cylindrical guard and is caught in the cup, allowing the inner circumferential surface of the cylindrical guard to be cleaned efficiently.

[0011] The cup cleaning nozzle of this substrate processing apparatus may be a nozzle that sprays a fan-shaped jet that spreads at a predetermined angle in a plan view and a linear jet that is approximately horizontal in a side view, i.e., a nozzle that has a flat jet profile that spreads in a fan shape along the horizontal plane. By using such a nozzle, the inner surface of the processing cup (cylindrical guard) can be thoroughly cleaned using a relatively small amount of cleaning liquid.

[0012] The predetermined angle θ of the cup cleaning nozzle of this substrate processing apparatus in the circumferential direction is preferably 10°≦θ≦30°, because verification and evaluation using a prototype confirmed that the inner peripheral surface of the processing cup (cylindrical guard) can be cleaned without any gaps if 10°≦θ≦30°.

[0013] In addition, seven cup washing nozzles may be provided. In the case of seven cup washing nozzles, the washing range of each cup washing nozzle is appropriate, and the spray strength of the washing liquid is also appropriate.

[0014] Furthermore, the cleaning liquid sprayed from the cup cleaning nozzle may be DIW (Deionized Water). Use of DIW is particularly effective in washing away VOCs (Volatile Organic Compounds) from the inner surface of the treatment cup (cylindrical guard), thereby achieving a reduction in the VOC concentration in the treatment cup.

[0015] In another embodiment of the present invention, a method for cleaning a processing cup includes performing a VOC processing step using VOCs, followed by a substrate drying processing step, and cleaning the processing cup using the cup cleaning nozzle in parallel with the drying processing step.

[0016] As in this embodiment, by performing the cup cleaning process in parallel with the substrate drying process after the VOC treatment process, it is possible to achieve an effect of reducing the VOC concentration in the exhaust gas at the end of the substrate treatment. [Brief explanation of the drawings]

[0017] [Figure 1] FIG. 1 is a schematic plan view showing the internal configuration of a substrate processing apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a schematic vertical cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 3 is a schematic cross-sectional view for explaining an example of the configuration of a processing unit provided in the substrate processing apparatus. [Figure 4] FIG. 4 is a schematic plan view for explaining the arrangement structure of the cup washing nozzles. [Figure 5] FIG. 5 is a schematic diagram showing the spray direction of the cleaning liquid sprayed from one cup cleaning nozzle as seen from the side. [Figure 6] FIG. 6 is a schematic diagram showing, in plan view, the spray direction of the cleaning liquid sprayed from one cup cleaning nozzle. [Figure 7] FIG. 7 is a block diagram showing the electrical configuration of the main parts of the substrate processing apparatus. [Figure 8] FIG. 8 is a flowchart illustrating an example of substrate processing by the substrate processing apparatus. [Figure 9] FIG. 9 is a chart showing a list of the cylindrical guards, drainage paths, and exhaust paths that are mainly used in each processing step shown in FIG. DETAILED DESCRIPTION OF THE INVENTION

[0018] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

[0019] Fig. 1 is a schematic plan view showing the internal configuration of a substrate processing apparatus 1 according to an embodiment of the present invention, Fig. 2 is a schematic vertical cross-sectional view taken along line II-II in Fig. 1.

[0020] The substrate processing apparatus 1 includes an indexer block 2, a processing block 3 adjacent to the indexer block 2 in the lateral direction (horizontal direction), and a controller 4 (see FIG. 7 described later) that controls the substrate processing apparatus 1.

[0021] The indexer block 2 includes a plurality of (four in this embodiment) load ports LP and an indexer robot IR.

[0022] The load ports LP are arranged horizontally. Each load port LP is configured to hold one carrier CA. The carrier CA is a substrate container that accommodates a substrate W to be processed. The substrate W is, for example, a semiconductor wafer.

[0023] The indexer robot IR is configured to be able to access the carriers CA held by the multiple load ports LP, respectively, to load / unload substrates W, and transport substrates W between the processing block 3. In this embodiment, the indexer robot IR is an articulated arm robot equipped with an articulated arm.

[0024] The processing block 3 includes a plurality of (24 in this embodiment) processing units 5, a plurality of substrate placement parts 6 (a first substrate placement part 6U and a second substrate placement part 6L), and a plurality of main transport robots CR (a first main transport robot CRU and a second main transport robot CRL).

[0025] Each of the plurality of processing units 5 performs processing on the substrates W. In this embodiment, each processing unit 5 is a single-wafer processing unit that processes the substrates W one by one.

[0026] The processing units 5 are arranged on both sides of the transport space 8 along the transport space 8 through which the substrates W are transported by the main transport robots CR, and face the transport space 8. The transport space 8 extends linearly in a direction away from the indexer block 2 in a plan view.

[0027] The multiple processing units 5 make up multiple (four in this embodiment) processing towers TW. In a plan view, multiple (two in this embodiment) processing towers TW are arranged on each side of the transfer space 8. Each processing tower TW includes multiple stages (six stages in this embodiment) of processing units 5 stacked vertically. In this embodiment, 24 processing units 5 are arranged in four processing towers TW, six in each. All processing units 5 have a substrate loading / unloading entrance 5a facing the transfer space 8.

[0028] A fluid supply unit 9 and an exhaust unit 10 are disposed on the sides of each processing tower TW. The fluid supply unit 9 houses pipes for supplying processing fluids used in the multiple processing units 5 that make up the processing tower TW, and pumps for sending the fluids in the pipes. The exhaust unit 10 houses pipes for exhausting the atmosphere inside the multiple processing units 5 that make up the processing tower TW.

[0029] The processing fluid refers to a liquid (processing liquid) or gas used in the substrate processing apparatus 1. Examples of the processing liquid include a chemical liquid, a rinse liquid, and a cleaning liquid, which will be described later.

[0030] In plan view, the exhaust section 10 houses exhaust pipes 11 for directing exhaust from the multiple processing units 5 constituting the corresponding processing tower TW to exhaust equipment outside the substrate processing apparatus 1. Three exhaust pipes 11 are provided: one for exhausting acids, one for exhausting alkalis, and one for exhausting volatile organic compounds. The exhaust section 10 also houses a switching mechanism 12 that switches between the three exhaust pipes 11 depending on the type of processing (more specifically, the type of processing liquid) in the processing unit 5. Although not shown, the exhaust section 10 may also house actuators that drive the switching mechanism 12.

[0031] The multiple processing units 5 are classified as lower-tier processing units 5 or upper-tier processing units 5. In this embodiment, the processing units 5 in the bottom three tiers are lower-tier processing units 5, and the processing units 5 in the top three tiers are upper-tier processing units 5.

[0032] The first substrate platform 6U and the second substrate platform 6L are arranged side by side in the vertical direction. The first main transport robot CRU and the second main transport robot CRL are arranged side by side in the vertical direction in the transport space 8.

[0033] The first substrate platform 6U temporarily holds a substrate W to be transferred between the indexer robot IR and the first main transport robot CRU, and the second substrate platform 6L temporarily holds a substrate W to be transferred between the indexer robot IR and the second main transport robot CRL.

[0034] The first main transport robot CRU transports substrates W between the first substrate platform 6U and the upper processing unit 5. The second main transport robot CRL transports substrates W between the second substrate platform 6L and the lower processing unit 5.

[0035] The processing unit 5 includes a spin chuck 15 that rotates the substrate W around a rotation axis A1 (vertical axis) while holding the substrate W horizontally, a processing cup 16 that surrounds the spin chuck 15 in a plan view, and a processing chamber 17 that houses the spin chuck 15 and the processing cup 16. The rotation axis A1 is a vertical line that passes through the center of the substrate W. The spin chuck 15 is an example of a rotary holding member.

[0036] The processing chamber 17 includes a bottom wall 17A, a plurality of (four in this embodiment) side walls 17B, and a top wall 17C (see FIG. 3 described later), which define an internal space 101 of the processing chamber 17. The substrate loading / unloading opening 5a is formed in the side wall 17B of the processing chamber 17.

[0037] FIG. 3 is a schematic cross-sectional view for explaining an example of the configuration of the processing unit 5. As shown in FIG.

[0038] The spin chuck 15 includes a plurality of chuck pins 20, a spin base 21, a rotation shaft 22, and a spin motor 23.

[0039] The spin base 21 has a circular disk shape extending in the horizontal direction. In a plan view, the spin base 21 has a circular shape with a diameter larger than that of the substrate W. On the upper surface of the spin base 21, a plurality of chuck pins 20 for gripping the peripheral edge of the substrate W are arranged at intervals in the circumferential direction of the spin base 21. The chuck pins 20 are also called gripping pins.

[0040] The spin base 21 and the plurality of chuck pins 20 constitute a substrate holding unit that horizontally holds the substrate W. The substrate holding unit is also called a substrate holder.

[0041] The rotation shaft 22 extends vertically along the rotation axis A1. The upper end of the rotation shaft 22 is coupled to the center of the lower surface of the spin base 21. The spin motor 23 applies a rotational force to the rotation shaft 22. The rotation shaft 22 is rotated by the spin motor 23, thereby rotating the spin base 21. This causes the substrate W to rotate around the rotation axis A1. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1. In this embodiment, the substrate holding unit and the substrate rotation unit constitute a rotary holding member.

[0042] The processing unit 5 includes a plurality of processing liquid nozzles 30 and an FFU (Fan Filter Unit) 26. The processing liquid nozzles 30 are housed in a processing chamber 17.

[0043] FFU 26 is attached to opening 17a provided in upper wall 17C of processing chamber 17, and is an example of an air blowing unit that sends clean air into processing chamber 17. FFU 26 includes a fan (not shown) that generates an airflow from outside processing chamber 17 toward the inside of processing chamber 17, a filter (not shown) for removing foreign matter contained in the airflow, and an actuator (not shown) such as a motor that drives the fan.

[0044] Each processing liquid nozzle 30 is an example of a liquid supply member that supplies a liquid to the substrate W held by the spin chuck 15. The multiple processing liquid nozzles 30 include chemical liquid nozzles 31 and 34 that discharge a chemical liquid toward the upper surface of the substrate W, an upper rinse liquid nozzle 32 that discharges a rinse liquid toward the upper surface of the substrate W, a lower rinse liquid nozzle 33 that discharges a rinse liquid toward the lower surface of the substrate W, and an IPA nozzle 35 that discharges IPA (Isopropyl Alcohol) toward the upper surface of the substrate W. IPA is an example of VOCs (Volatile Organic Compounds).

[0045] The chemical nozzle 31 is connected to a chemical pipe 41 that guides the chemical to the chemical nozzle 31. A chemical valve 51 that opens and closes the flow path of the chemical pipe 41 and a chemical pump 61 that sends the chemical to the chemical nozzle 31 are installed in the chemical pipe 41. When the chemical valve 51 is opened, the chemical is discharged downward from the chemical nozzle 31 in a continuous flow.

[0046] In this embodiment, the chemical liquid nozzle 31 is a movable nozzle that is moved horizontally and vertically by the first nozzle moving unit 71. The chemical liquid nozzle 31 is configured to move horizontally between a central position and a home position (retracted position). When the chemical liquid nozzle 31 is located at the central position and the chemical liquid valve 51 is opened, the chemical liquid is supplied to a central region on the upper surface of the substrate W.

[0047] The first nozzle moving unit 71 may include an arm 71A connected to the chemical liquid nozzle 31 and extending horizontally, a rotating shaft 71B connected to the arm 71A and extending vertically, and a rotating shaft drive unit 71C that rotates and raises and lowers the rotating shaft 71B.

[0048] The rotary shaft drive unit 71C includes a drive motor (not shown) that rotates the rotary shaft 71B about a rotation axis A2 extending vertically to thereby swing the arm 71A, and an arm lifter (not shown) that moves the rotary shaft 71B up and down vertically to thereby raise and lower the arm 71A. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

[0049] Unlike this embodiment, chemical liquid nozzle 31 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

[0050] In this embodiment, the chemical liquid discharged from the chemical liquid nozzle 31 may be an acid liquid such as sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, hydrogen peroxide, or organic acid (e.g., citric acid, oxalic acid, etc.). These chemical liquids may be used as a single type of chemical liquid, or a mixture thereof may be used. An example of a mixture is SPM (sulfuric acid / hydrogen peroxide mixture).

[0051] Chemical nozzle 34 is connected to chemical pipe 47, which guides the chemical to chemical nozzle 34. Chemical pipe 47 is fitted with chemical valve 57, which opens and closes the flow path of the pipe, and chemical pump 67, which sends the chemical to chemical nozzle 34. When chemical valve 57 is opened, the chemical is discharged downward from chemical nozzle 34 in a continuous flow.

[0052] In this embodiment, the chemical nozzle 34 is a movable nozzle that is moved horizontally and vertically by the third nozzle moving unit 74. The chemical nozzle 34 is configured to move horizontally between a central position and a home position (retracted position). When the chemical nozzle 34 is located at the central position and the chemical valve 57 is opened, the chemical solution is supplied to a central region on the upper surface of the substrate W.

[0053] The third nozzle moving unit 74 may include an arm 74A connected to the chemical nozzle 34 and extending horizontally, a rotating shaft 74B connected to the arm 74A and extending vertically, and a rotating shaft drive unit 74C that rotates and raises and lowers the rotating shaft 74B.

[0054] The rotating shaft drive unit 74C includes a drive motor (not shown) that rotates the rotating shaft 74B about a rotation axis A4 extending vertically to thereby swing the arm 74A, and an arm lifter (not shown) that moves the rotating shaft 74B up and down in the vertical direction to thereby raise and lower the arm 74A. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

[0055] Unlike this embodiment, the chemical nozzle 34 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

[0056] In this embodiment, the chemical liquid discharged from the chemical liquid nozzle 34 may be an alkaline liquid such as ammonia water, hydrogen peroxide water, or organic alkali (e.g., TMAH: tetramethylammonium hydroxide). These chemical liquids may be used as a single type of chemical liquid, or a mixture thereof may be used. An example of a mixture is APM (ammonia-hydrogen peroxide mixture).

[0057] The upper rinse liquid nozzle 32 is connected to an upper rinse liquid pipe 42 that guides the rinse liquid to the upper rinse liquid nozzle 32. An upper rinse liquid valve 52 that opens and closes the flow path of the upper rinse liquid pipe 42 and an upper rinse liquid pump 62 that sends the rinse liquid to the upper rinse liquid nozzle 32 are installed in the upper rinse liquid pipe 42. When the upper rinse liquid valve 52 is opened, the rinse liquid is ejected downward from the upper rinse liquid nozzle 32 in a continuous flow.

[0058] In this embodiment, the upper rinse liquid nozzle 32 is a movable nozzle that is moved horizontally and vertically by the second nozzle moving unit 72. The upper rinse liquid nozzle 32 is configured to move horizontally between a central position and a home position (retracted position). When the upper rinse liquid nozzle 32 is located at the central position and the upper rinse liquid valve 52 is opened, the rinse liquid is supplied to a central region on the upper surface of the substrate W.

[0059] The second nozzle movement unit 72 may include an arm 72A connected to the upper rinse liquid nozzle 32 and extending horizontally, a rotating shaft 72B connected to the arm 72A and extending vertically, and a rotating shaft drive unit 72C that rotates and raises and lowers the rotating shaft 72B.

[0060] The rotary shaft drive unit 72C includes a drive motor (not shown) that rotates the rotary shaft 72B about a vertical rotation axis A3 to swing the arm 72A, and an arm lifter (not shown) that moves the rotary shaft vertically to raise and lower the arm 72A. The arm lifter is, for example, a ball screw mechanism or a rack and pinion mechanism.

[0061] Unlike this embodiment, the upper rinse liquid nozzle 32 may be a fixed nozzle whose position is fixed in the horizontal and vertical directions.

[0062] The lower rinse liquid nozzle 33 is a fixed nozzle that discharges the rinse liquid toward the center of the lower surface of the substrate W. The lower rinse liquid nozzle 33 is inserted into a through-hole 21a that opens in the center of the upper surface of the spin base 21 and into an internal space 22a of the rotation shaft 22 that communicates with the through-hole 21a. The discharge port 33a of the lower rinse liquid nozzle 33 is exposed on the upper surface of the spin base 21.

[0063] The lower rinse liquid nozzle 33 is connected to a lower rinse liquid pipe 43 that guides the rinse liquid to the lower rinse liquid nozzle 33. A lower rinse liquid valve 53 that opens and closes the flow path of the lower rinse liquid pipe 43 and a lower rinse liquid pump 63 that sends the rinse liquid to the lower rinse liquid nozzle 33 are installed in the lower rinse liquid pipe 43. When the lower rinse liquid valve 53 is opened, the rinse liquid is ejected upward from the lower rinse liquid nozzle 33 in a continuous flow.

[0064] Examples of rinse solutions include DIW (Deionized Water), carbonated water, electrolytic ionized water, diluted hydrochloric acid water (e.g., about 1 ppm to 100 ppm), diluted ammonia water (e.g., about 1 ppm to 100 ppm), and reduced water (hydrogen water).

[0065] A lower gas flow path 25 is formed by the space between the lower rinse liquid nozzle 33 and the through-hole 21a of the spin base 21. The lower gas flow path 25 is connected to a lower gas pipe 44 that is inserted into the internal space 22a between the inner circumferential surface of the rotation shaft 22 and the lower rinse liquid nozzle 33. When a lower gas valve 54 installed in the lower gas pipe 44 is opened, a gas such as nitrogen gas (N2 gas) is discharged from the lower gas flow path 25 toward the space between the lower surface of the substrate W and the upper surface of the spin base 21.

[0066] The gas discharged from the lower gas flow path 25 is not limited to nitrogen gas. The gas discharged from the lower gas flow path 25 may be air. The gas discharged from the lower gas flow path 25 may also be an inert gas other than nitrogen gas. The inert gas other than nitrogen gas is, for example, argon.

[0067] The IPA nozzle 35 is held by an arm 35A. The arm 35A is connected to an arm moving unit 35B. The arm moving unit 35B can raise and lower the IPA nozzle 35 via the arm 35A and can also retract the IPA nozzle 35 to a predetermined retracted position.

[0068] A pipe 48 is connected to the IPA nozzle 35. A valve 58 is provided in the pipe 48. When the valve 58 is opened, IPA is supplied to the IPA nozzle 35 through the pipe 48, and the IPA is supplied from the IPA nozzle 35 to the central region of the upper surface of the substrate W.

[0069] A pipe 49 is further connected to the IPA nozzle 35. A valve 59 is provided in the pipe 49. When the valve 59 is opened, N2 gas is supplied to the IPA nozzle 35 through the pipe 49. The IPA nozzle 35 is provided with a discharge port that discharges the N2 gas supplied from the pipe 49, for example, downward or to the side. When the N2 gas is discharged from the IPA nozzle 35, the N2 gas contributes to drying the substrate W.

[0070] A cylindrical boss casing 27 is provided below the spin base 21, surrounding the rotating shaft 22, the spin motor 23, and the like. An inclined surface 27a is formed at the upper end of the outer circumferential surface of the boss casing 27, inclining upward and inward. The inclined surface 27a has an annular shape in plan view. A plurality of cup washing nozzles 28 are arranged on the inclined surface 27a. The cup washing nozzles 28 are preferably provided at equal intervals around the circumferential direction of the inclined surface 27a, and the number of the cup washing nozzles 28 may be, for example, seven. Each cup washing nozzle 28 may be attached to the boss casing 27 by screwing it onto the inclined surface 27a.

[0071] The cup washing nozzles 28 are connected to a washing liquid pipe 46 that guides the washing liquid to the cup washing nozzles 28. The washing liquid pipe 46 includes branch sections 46a that guide the washing liquid to each cup washing nozzle 28, and a main pipe section 46b where the multiple branch sections 46a join. A washing liquid valve 55 that opens and closes the flow path of the main pipe section 46b of the washing liquid pipe 46 and a washing liquid pump 64 that sends the washing liquid to the washing liquid pipe 46 are installed in the main pipe section 46b. When the washing liquid valve 55 is opened, the washing liquid flows from the main pipe section 46b to the multiple branch sections 46a, and the washing liquid is sprayed from each cup washing nozzle 28 at an equal flow rate.

[0072] The processing cup 16 includes a cylindrical guard 80 that catches liquid splashed outward from the substrate W held and rotating on the spin chuck 15, a cup 90 that catches liquid guided downward by the cylindrical guard 80, and an exhaust bucket 100 that surrounds the cylindrical guard 80 and the cup 90 in a plan view.

[0073] In this embodiment, an example is shown in which two cylindrical guards 80 (a first cylindrical guard 80A and a second cylindrical guard 80B) and two cups 90 (a first cup 90A and a second cup 90B) are provided. However, the number of cylindrical guards 80 may be one, or three or more. The number of cups 90 may also be one, or three or more.

[0074] The cylindrical guard 80 is made of, for example, a resin. The cylindrical guard 80 is made of a hydrophilic resin or a hydrophobic resin. The cylindrical guard 80 is preferably made of a hydrophobic resin.

[0075] The hydrophobic resin is, for example, a fluororesin. Specifically, the cylindrical guard 80 is made of one of perfluoroalkoxyalkane (PFA), polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), and ethylene chlorotrifluoroethylene copolymer (ECTFE), or a mixture containing two or more of these.

[0076] Each of the first cup 90A and the second cup 90B has the form of an upwardly opening annular groove.

[0077] The first cylindrical guard 80A and the second cylindrical guard 80B each have a substantially cylindrical shape, and the upper end of each cylindrical guard 80 is inclined inward toward the center of the cylindrical guard 80. The first cylindrical guard 80A is disposed so as to surround the substrate W held by the spin chuck 15. The second cylindrical guard 80B (inner guard) is disposed so as to surround the substrate W held by the spin chuck 15 closer to the center of the first cylindrical guard 80A than the first cylindrical guard 80A (outer guard).

[0078] The center side of the first cylindrical guard 80A (hereinafter referred to as the "inner guard side IS") is also the inside in the direction of the rotation radius of the substrate W. The opposite side of the center side of the first cylindrical guard 80A (hereinafter referred to as the "outer guard side OS") is also the outside in the direction of the rotation radius of the substrate W. The first cylindrical guard 80A and the second cylindrical guard 80B are arranged coaxially on the rotation axis A1, and the center side of the first cylindrical guard 80A is also the center side of the second cylindrical guard 80B.

[0079] The first cup 90A is formed integrally with the second cylindrical guard 80B and receives the liquid guided downward by the first cylindrical guard 80A. The second cup 90B receives the liquid guided downward by the second cylindrical guard 80B. The liquid received by the first cup 90A is collected into a predetermined collection container by opening valve V1 through a first processing liquid recovery channel 901 connected to the lower end of the first cup 90A. The liquid received by the second cup 90B is collected into a predetermined collection container by opening valve V2 through a flow channel 902 and a second processing liquid recovery channel 903 connected to the lower end of the second cup 90B. Furthermore, the liquid received by the second cup 90B is collected into a predetermined collection container by opening valve V3 through a flow channel 902 and a third processing liquid recovery channel 904 connected to the lower end of the second cup 90B.

[0080] In this embodiment, as will be described later, the liquid recovered through the first treatment liquid recovery channel 901 is DHF (Dolute Hydrogen Fluoride), the liquid recovered through the second treatment liquid recovery channel 903 is an alkaline liquid, and the liquid recovered through the third treatment liquid recovery channel 904 is IPA.

[0081] The processing unit 5 includes a guard lifting unit 95 that separately raises and lowers the first cylindrical guard 80A and the second cylindrical guard 80B. The guard lifting unit 95 raises and lowers the first cylindrical guard 80A between a lower position and an upper position. The guard lifting unit 95 raises and lowers the second cylindrical guard 80B between the lower position and an upper position.

[0082] When the first cylindrical guard 80A and the second cylindrical guard 80B are both in the upper position, the second cylindrical guard 80B receives the liquid splashed from the substrate W. When the second cylindrical guard 80B is in the lower position and the first cylindrical guard 80A is in the upper position, the liquid splashed from the substrate W is received by the first cylindrical guard 80A.

[0083] When the first cylindrical guard 80A and the second cylindrical guard 80B are both positioned in the lower position, the corresponding main transport robot CR can load and unload a substrate W into and from the processing chamber 17.

[0084] The guard lifting unit 95 includes a first guard lifting unit that lifts and lowers the first cylindrical guard 80A and a second guard lifting unit that lifts and lowers the second cylindrical guard 80B. The first guard lifting unit is, for example, a first actuator (not shown) that provides driving force to a first lifting mechanism (not shown) coupled to the first cylindrical guard 80A. The first lifting mechanism is, for example, a ball screw mechanism or a rack and pinion mechanism. The second guard lifting unit is, for example, a second actuator (not shown) that provides driving force to a second lifting mechanism (not shown) coupled to the second cylindrical guard 80B. The second lifting mechanism is, for example, a ball screw mechanism or a rack and pinion mechanism.

[0085] The guard lifting unit 95 is also called a guard lifter. Similarly, the first guard lifting unit is a first guard lifter, and the second guard lifting unit is a second guard lifter.

[0086] The internal space 101 of the processing chamber 17 is divided into an in-guard space 102 located inside the guard IS relative to the first cylindrical guard 80A, and an out-guard space 103 other than the in-guard space 102. A partition plate 104 is provided on at least one of the side walls 17B of the processing chamber 17 to separate the out-guard space 103 of the processing chamber 17 into upper and lower spaces. That is, the out-guard space 103 is divided by the partition plate 104 into an upper space 103A above the partition plate 104 and a lower space 103B below the partition plate 104. The partition plate 104 is supported by the exhaust tub 100.

[0087] Upper space 103A includes a space above partition plate 104 and inside guard IS of first cylindrical guard 80A, and a space above partition plate 104 and outside guard OS of first cylindrical guard 80A.

[0088] The lower space 103B is divided into an inner lower space 105 located inside the guard IS relative to the exhaust tub 100 and an outer lower space 106 located outside the guard OS relative to the exhaust tub 100.

[0089] The atmosphere inside the processing chamber 17 is exhausted via an exhaust connection pipe 45 that penetrates the side wall 17B of the processing chamber 17 and the exhaust tub 100. The exhaust connection pipe 45 is connected to an exhaust pipe 11 (see FIG. 1) disposed in the exhaust unit 10.

[0090] The FFU 26 generates an airflow F by sending clean air into the internal space 101 of the processing chamber 17. The airflow F passes from the upper space 103A through the guard intra-space 102 or the lower space 103B and is sent to the exhaust connection pipe 45 of the exhaust unit 10. The airflow F flows into the lower space 103B through a gap G1 between the end of the partition plate 104 on the inner guard side IS and the first cylindrical guard 80A, or through a gap G2 formed at the end of the partition plate 104 on the outer guard side OS.

[0091] The airflow F1 that has flowed into the inner lower space 105 through the gap G1 flows from the inner lower space 105 into the exhaust connecting pipe 45.

[0092] The airflow F2 that flows into the outer lower space 106 through the gap G2 flows into the inner lower space 105 through the opening 100a formed in the exhaust tub 100, and then flows into the exhaust connecting pipe 45. The airflow F3 that flows into the guard intra-space 102 flows from the guard intra-space 102 into the exhaust connecting pipe 45.

[0093] The airflows F1, F2, and F3 that flow into the exhaust connection pipe 45 flow into the exhaust pipe 11 housed in the exhaust section 10 described above, and the destination of the airflow is switched by the switching mechanism 12 to an acid exhaust pipe, an alkali exhaust pipe, or an organic exhaust pipe depending on the type of exhaust.

[0094] The size of gap G1 between partition plate 104 and first cylindrical guard 80A can be adjusted by adjusting the height position of first cylindrical guard 80A. Adjusting the size of gap G1 allows adjustment of the flow rates of airflows F1 to F3.

[0095] Fig. 4 is a schematic plan view for explaining the arrangement structure of the cup washing nozzles 28. Fig. 5 is a schematic side view showing the spray direction of the cleaning liquid sprayed from one cup washing nozzle 28. Fig. 6 is a schematic plan view showing the spray direction of the cleaning liquid sprayed from one cup washing nozzle 28.

[0096] Referring to FIG. 4, inclined surface 27a formed on the upper end of the outer circumferential surface of boss casing 27 has an annular shape with a predetermined width in a plan view. Seven cup washing nozzles 28 are arranged on this annular inclined surface 27a at equal intervals in the circumferential direction around rotation axis A1. In other words, the seven cup washing nozzles 28 are arranged at equal angular intervals around rotation axis A1. More specifically, the seven cup washing nozzles 28 are arranged on inclined surface 27a, which extends annularly around rotation axis A1 in a plan view, at angular intervals of approximately 51.4°. The seven cup washing nozzles 28 are arranged at positions spaced a predetermined distance (i.e., equal distances) radially from rotation axis A1. The nozzle direction of each cup washing nozzle 28 is adjusted so that the washing liquid is sprayed outward from inclined surface 27a in a fan shape approximately horizontally.

[0097] Furthermore, the central direction of the fan-shaped jet of each cup washing nozzle 28 is directed in a direction radially from the rotation axis A1, i.e., in a direction tilted at a predetermined angle θ (see FIG. 6) in the circumferential direction of the inclined surface 27a with respect to the direction of the rotation radius. Therefore, the cleaning liquid jetted from each cup washing nozzle 28, as depicted by dots, exhibits a fan shape tilted in one direction (to the left (counterclockwise) in the illustrated example) with respect to the direction of the rotation radius when viewed from the rotation axis A1.

[0098] Referring to FIG. 5, the cup washing nozzle 28 may be attached by being screwed into the boss casing 27 from the inclined surface 27a. The cup washing nozzle 28 is a nozzle that sprays water linearly in a substantially horizontal direction when viewed from the side. That is, the cup washing nozzle 28 has a flat, fan-shaped spray profile that spreads horizontally and has almost no vertical spread. The horizontally linear spray of the cup washing nozzle 28 when viewed from the side may spread vertically by an angle β (0<β<20°) depending on the nozzle performance. The washing liquid pipe 46 (more specifically, its branch portion 46a) that supplies the washing liquid to the cup washing nozzle 28 is disposed inside the boss casing 27. The flow rate of the washing liquid sprayed by one cup washing nozzle 28 is desirably set to 210 ml / min or less, for example. By setting the flow rate of the cleaning liquid to the above flow rate, the flow velocity at which the cleaning liquid sprayed from the cup cleaning nozzle 28 hits the inner surface of the cylindrical guard 80 can be reduced, and the number of droplets of cleaning liquid that hit the inner surface of the cylindrical guard 80 and bounce back can be almost eliminated or made extremely small.

[0099] 6, cup washing nozzle 28 is a spray nozzle that sprays a fan-shaped spray that spreads outward at a predetermined angle 2α (120°≦2α≦140°) in a plan view. In this embodiment, the center of the spray direction of cup washing nozzle 28 (the central direction of the fan-shaped spray profile) is not directed in radial direction D1 that extends linearly outward from rotation axis A1, but in direction D2 that is tilted by a predetermined angle θ in the circumferential direction of inclined surface 27a with respect to radial direction D1. Here, verification and evaluation of a prototype confirmed that the predetermined angle θ is preferably 10°≦θ≦30°.

[0100] By directing the fan-shaped spray direction of the cup washing nozzle 28 in a plan view toward the direction D2 tilted by a predetermined angle θ in the circumferential direction of the inclined surface 27a as described above, the spray distance of the cleaning liquid increases in the tilted angular direction. That is, the distance from the cup washing nozzle 28 to the inner circumferential surface of the cylindrical guard 80 increases. Therefore, the area where the cleaning liquid hits the inner circumferential surface of the cylindrical guard 80 increases. As a result, the seven cup washing nozzles 28 can clean the entire inner circumferential surface of the cylindrical guard 80 without leaving any gaps unwashed.

[0101] 7 is a block diagram showing the electrical configuration of the main parts of the substrate processing apparatus 1. The controller 4 includes a microcomputer, and controls the controlled objects provided in the substrate processing apparatus 1 according to a predetermined control program.

[0102] Specifically, the controller 4 may be a computer including a processor (CPU) 4A and a memory 4B storing a control program. The controller 4 is configured to perform various controls for substrate processing by the processor 4A executing the control program.

[0103] The indexer robot IR and the multiple main transport robots CR are controlled by the controller 4. The controller 4 also controls actuators arranged in the exhaust unit 10, valves arranged in the fluid supply unit 9 (chemical liquid valve 51, upper rinse liquid valve 52, lower rinse liquid valve 53, lower gas valve 54, cleaning liquid valve 55), pumps (chemical liquid pump 61, upper rinse liquid pump 62, lower rinse liquid pump 63, cleaning liquid pump 64), and valves V1, V2, and V3 of the processing liquid recovery paths 901, 903, and 904.

[0104] The objects controlled by the controller 4 further include each member provided in the processing unit (spin motor 23, first nozzle moving unit 71, second nozzle moving unit 72, third nozzle moving unit 74, guard lifting unit 95, and FFU 26).

[0105] 8 is a flow chart for explaining an example of substrate processing by the substrate processing apparatus 1. In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 8, a DHF processing step (step S1), a rinsing processing step (step S2), an AMP processing step (step S3), a rinsing processing step (step S4), an IPA processing step (step S5), and an N2 drying processing and cup cleaning processing step (step S6) are performed in this order.

[0106] FIG. 9 is a chart showing a list of the cylindrical guards 80, drainage paths, and exhaust paths that are mainly used in each of the processing steps shown in FIG.

[0107] 3, 8, and 9 will be mainly referred to below. First, an unprocessed substrate W is carried from the carrier CA into the processing unit 5 by the indexer robot IR (see FIG. 1) and one of the plurality of main transport robots CR (see FIG. 1), and then handed over to the spin chuck 15. As a result, the substrate W is held horizontally by the spin chuck 15 (substrate holding step).

[0108] The spin chuck 15 continues to hold the substrate W until the N2 drying process and cup cleaning process (step S6) are completed. From the start of the substrate holding process until the N2 drying process and cup cleaning process (step S6) are completed, the guard lifting unit 95 adjusts the height positions of the first cylindrical guard 80A and the second cylindrical guard 80B so that at least one cylindrical guard 80 is positioned in the upper position. With the substrate W held by the spin chuck 15, the spin motor 23 rotates the spin base 21. This starts rotation of the substrate W held horizontally (substrate rotation process). The rotation speed of the substrate W is, for example, 600 rpm or more and 1200 rpm or less.

[0109] Then, the lower gas valve 54 is opened to discharge gas from the lower gas flow path 25 (gas discharge step). The lower gas valve 54 is maintained in an open state until the N2 drying process and the cup cleaning process step (step S6) are completed. The flow rate of gas from the lower gas flow path 25 is, for example, 50 L / min. The exhaust flow rate is adjusted by the supply of gas from the lower gas flow path 25 and the inflow of gas by the FFU 26, and the internal pressure of the processing chamber 17 is adjusted to a predetermined pressure. The exhaust flow rate is, for example, 3 m 3 In this case, the internal pressure of the processing chamber 17 is adjusted to -30 Pa.

[0110] Next, a DHF processing step (step S1) is performed in which the upper surface of the substrate W is cleaned with DHF, which is an example of a chemical solution.

[0111] Specifically, the first nozzle moving unit 71 moves the chemical liquid nozzle 31 to a processing position. The processing position of the chemical liquid nozzle 31 is, for example, the central position.

[0112] With the chemical nozzle 31 positioned at the processing position, the chemical valve 51 is opened, causing DHF to be supplied (discharged) from the chemical nozzle 31 toward the central region of the upper surface of the rotating substrate W (chemical supplying step).

[0113] The DHF supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The DHF is discharged from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is cleaned with DHF.

[0114] The DHF discharged from the upper surface of the substrate W is mainly received by the inclined surface of the first cylindrical guard 80A (Guard1). The DHF received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The DHF guided to the cylindrical surface is finally received by the corresponding cup 90A. When the valve V1 is opened, the DHF received by the cup 90A is collected into a predetermined collection container through the first processing liquid collection path 901.

[0115] During the DHF treatment step (step S1), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an acid exhaust pipe.

[0116] Next, a rinse process (step S2) is performed to clean the substrate W with a rinse liquid. Specifically, after the chemical liquid valve 51 is closed, the first nozzle movement unit 71 moves the chemical liquid nozzle 31 to the home position. After the chemical liquid valve 51 is closed, the second nozzle movement unit 72 moves the upper rinse liquid nozzle 32 to the processing position. The processing position of the upper rinse liquid nozzle 32 is, for example, the central position.

[0117] With the upper rinse liquid nozzle 32 positioned at the processing position, the upper rinse liquid valve 52 is opened, causing the rinse liquid to be supplied (discharged) from the upper rinse liquid nozzle 32 toward the central region of the upper surface of the rotating substrate W (upper rinse liquid supply step).

[0118] The rinse liquid supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The rinse liquid is discharged from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is washed with the rinse liquid (upper-side rinsing process).

[0119] The rinse liquid discharged from the upper surface of the substrate W is mainly received by the inclined surface of the first cylindrical guard 80A (Guard1). The rinse liquid received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The rinse liquid guided to the cylindrical surface is finally received by the corresponding cup 90A. When the valve V1 is opened, the rinse liquid received by the cup 90A is collected into a predetermined collection container through the first processing liquid collection path 901.

[0120] During the rinsing process (step S2), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an acid exhaust pipe.

[0121] When supplying the rinse liquid to the upper surface of the substrate W, the lower rinse liquid valve 53 may be opened to discharge the rinse liquid from the lower rinse liquid nozzle 33 (lower rinse liquid supply step). This causes the lower surface of the substrate W to be washed with the rinse liquid (lower rinse step).

[0122] Next, an APM processing step (step S3) is performed in which the upper surface of the substrate W is cleaned with APM, which is an example of a chemical solution.

[0123] Specifically, the third nozzle moving unit 74 moves the chemical liquid nozzle 34 to a processing position. The processing position of the chemical liquid nozzle 34 is, for example, the central position.

[0124] With the chemical nozzle 34 positioned at the processing position, the chemical valve 57 is opened. As a result, the APM is supplied (discharged) from the chemical nozzle 34 toward the central region of the upper surface of the substrate W in a rotating state (chemical supplying step).

[0125] The APM supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The APM is then expelled by centrifugal force from the periphery of the upper surface of the substrate W. As a result, the entire upper surface of the substrate W is cleaned by the APM.

[0126] The APM discharged from the upper surface of the substrate W is mainly received by the inclined surface of the second cylindrical guard 80B (Guard2). The APM received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The APM guided to the cylindrical surface is finally received by the corresponding cup 90B. When valve V2 is opened, the APM received by cup 90B is collected into a predetermined collection container through flow path 902 and second processing liquid collection path 903.

[0127] During the APM treatment step (step S3), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an alkali exhaust pipe.

[0128] Next, a rinse process (step S4 (Rinse)) is performed to clean the substrate W with a rinse liquid. Specifically, after the chemical liquid valve 57 is closed, the third nozzle movement unit 74 moves the chemical liquid nozzle 34 to the home position. After the chemical liquid valve 57 is closed, the second nozzle movement unit 72 moves the upper rinse liquid nozzle 32 to the processing position. The processing position of the upper rinse liquid nozzle 32 is, for example, the central position.

[0129] With the upper rinse liquid nozzle 32 positioned at the processing position, the upper rinse liquid valve 52 is opened, causing the rinse liquid to be supplied (discharged) from the upper rinse liquid nozzle 32 toward the central region of the upper surface of the rotating substrate W (upper rinse liquid supply step).

[0130] The rinse liquid supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The rinse liquid is discharged from the periphery of the upper surface of the substrate W by centrifugal force. As a result, the entire upper surface of the substrate W is washed with the rinse liquid (upper-side rinsing process).

[0131] The rinse liquid discharged from the upper surface of the substrate W is mainly received by one of the inclined surfaces of the second cylindrical guard 80B (Guard2). The rinse liquid received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The rinse liquid guided to the cylindrical surface is finally received by the corresponding cup 90B. When the valve V2 is opened, the rinse liquid received by the cup 90B is collected into a predetermined collection container through the flow path 902 and the second processing liquid collection path 903.

[0132] During the rinsing process (step S4), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an alkali exhaust pipe.

[0133] In the rinse process step of step S4, when the rinse liquid is supplied to the upper surface of the substrate W, the lower rinse liquid valve 53 may be opened to discharge the rinse liquid from the lower rinse liquid nozzle 33 (lower rinse liquid supply step). As a result, the lower surface of the substrate W is washed with the rinse liquid (lower rinse step).

[0134] Next, an IPA treatment process (step S5) is performed to clean the upper surface of the substrate W with IPA, which is a chemical liquid. The IPA treatment process is an example of a VOC treatment process.

[0135] Specifically, the arm moving unit 35B moves the IPA nozzle 35 held by the arm 35A to a processing position. The processing position of the IPA nozzle 35 is, for example, a central position.

[0136] With the IPA nozzle 35 in the processing position, the valve 58 is opened and IPA is supplied to the IPA nozzle 35 through the pipe 48. Then, IPA is supplied (discharged) from the IPA nozzle 35 toward the central region of the upper surface of the substrate W in the rotating state.

[0137] The IPA supplied to the upper surface of the substrate W spreads radially due to centrifugal force and reaches the entire upper surface of the substrate W. The IPA is discharged by centrifugal force from the periphery of the upper surface of the substrate W. As a result, the entire upper surface of the substrate W is cleaned with IPA.

[0138] The IPA discharged from the upper surface of the substrate W is mainly received by the inclined surface of the second cylindrical guard 80B (Guard2). The IPA received by the inclined surface moves downward along the inclined surface and is guided to the cylindrical surface. The IPA guided to the cylindrical surface is finally received by the corresponding cup 90B. When the valve V3 is opened, the IPA received by the cup 90B is collected into a predetermined collection container through the flow path 902 and the third processing liquid collection path 904.

[0139] During the IPA treatment step (step S5), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to serve as an organic exhaust pipe.

[0140] Next, a drying process (step S6 (N2dry)) is performed in which the substrate W is dried using N2 gas. Specifically, the position of the IPA nozzle 35 remains the same as the process position, and the valve 58 is closed and the valve 59 is opened. As a result, N2 gas is supplied to the IPA nozzle 35 through the pipe 49 and is discharged from the IPA nozzle 35. As a result, the IPA on the surface of the substrate W is dried by the N2 gas. In the example of FIG. 9, the guard laterally facing the substrate W in the drying process is the first cylindrical guard 80A (Guard1).

[0141] During the drying process (step S6), a cup cleaning process (step S6) is carried out in parallel.

[0142] In the cup cleaning process, the cleaning liquid pump 64 is driven, the cleaning liquid valve 55 is opened, and a cleaning liquid such as DIW is supplied to multiple, specifically seven, cup cleaning nozzles 28 through the cleaning liquid piping 46. At this time, the supply power of the cleaning liquid pump 64 is controlled, and the flow rate of the DIW flowing through the cleaning liquid piping 46 (specifically, its main pipe section 46b) is set to, for example, 1500 ml / min. As a result, the flow rate of the DIW supplied to each of the seven cup cleaning nozzles 28, in other words, the flow rate of the DIW supplied to each cup cleaning nozzle 28, is approximately 210 ml / min.

[0143] Each of the seven cup cleaning nozzles 28 sprays in a fan-shaped pattern in a plan view as described above, and sprays over a wide area in a direction in which the spray center is tilted at a predetermined angle θ in the circumferential direction. As a result, the IPA adhering mainly to the inner circumferential surface of the second cylindrical guard 80B (inner guard: Guard2) of the cylindrical guard 80 is cleaned with DIW. The cleaning liquid (a mixture of IPA and DIW) is then collected in the cup 90B. When the valve V3 is opened, the cleaning liquid collected in the cup 90B is collected into a predetermined collection container via the flow path 902 and the third processing liquid collection path 904.

[0144] During the IPA processing step (step S5) and the N2 drying processing step and cup cleaning processing step (step S6), the exhaust pipe 11 connected to the exhaust connection pipe 45 is switched by the switching mechanism 12 to become a pipe for exhausting organic compounds.

[0145] As in this embodiment, when the N2 drying process (step S6) is performed, the cup cleaning process is performed in parallel, thereby achieving an effect of reducing the IPA concentration in the exhaust gas at the end of the recipe.

[0146] This is because, in the IPA processing step (step S5), IPA remains on the cylindrical guard 80, which causes a problem that the IPA concentration in the exhaust gas does not decrease by the time the recipe is completed. In this embodiment, a cup cleaning process is performed in parallel with the N2 drying process to clean the IPA remaining on the cylindrical guard 80, thereby suppressing or preventing IPA from remaining on the cylindrical guard 80. Therefore, the IPA concentration in the exhaust gas at the time the recipe is completed is reduced.

[0147] <Other embodiments> The present invention is not limited to the above-described embodiment, and can be embodied in other forms.

[0148] For example, in the above-described embodiment, two cylindrical guards 80 (first cylindrical guard 80A and second cylindrical guard 80B) are provided. However, unlike the above-described embodiment, only one of the cylindrical guards 80 may be provided.

[0149] In the above embodiment, the N2 drying process (step S6) using N2 gas is performed. However, the drying process of the substrate W may be performed by, for example, a spin dry process without using N2 gas. Even in this case, the IPA concentration in the exhaust gas at the end of the recipe can be reduced by performing a cup cleaning process in parallel with the spin dry process.

[0150] In the above-described embodiment, the partition plate 104 is provided. However, unlike the above-described embodiment, the partition plate 104 may not be provided, and the outer-guard space 103 may not be divided into upper and lower sections. In this case, the exhaust connection pipe 45 opens to the side wall 17B of the processing chamber 17.

[0151] In the above-described embodiment, the substrate processing apparatus 1 is provided with a plurality of processing units 5, together with a plurality of substrate mounting parts 6, an indexer robot IR, a plurality of main transport robots CR, and a controller 4. However, the substrate processing apparatus may be configured with only a single processing unit 5. In other words, the processing unit 5 may be an example of the substrate processing apparatus.

[0152] In the above-described embodiment, expressions such as "along," "horizontal," and "vertical" are used, but they do not necessarily have to be strictly "along," "horizontal," "vertical," etc. In other words, these expressions allow for deviations in manufacturing precision, installation precision, etc.

[0153] In this specification, when numerical ranges are indicated using "to" they include both endpoints unless otherwise specified.

[0154] In addition, various modifications can be made within the scope of the claims. [Explanation of symbols]

[0155] 1: Substrate processing equipment 4: Controller 5: Processing unit 9:Fluid supply section 15: Spin chuck 16: Processing cup 20: Zipper pin 21: Spin Base 22: Rotation axis 23: Spin motor 27: Boss Casing 27a: Inclined surface 28: Cup cleaning nozzle 30: Processing liquid nozzle 31, 34: Chemical nozzle 32: Upper rinse nozzle 33: Lower rinse nozzle 35: IPA nozzle 41, 47: Chemical liquid piping 42: Upper rinse liquid piping 43: Lower rinse liquid piping 44: Lower gas piping 45: Exhaust connection pipe 46: Cleaning liquid piping 48, 49: Piping 51, 57: Chemical valve 52: Upper rinse liquid valve 53: Lower rinse liquid valve 54: Lower gas valve 55: Cleaning solution valve 58, 59: Valve 61, 67: Chemical pump 62: Upper rinse pump 63: Lower rinse pump 64: Cleaning liquid pump 80, 80A, 80B: Cylindrical guard 90, 90A, 90B: Cup 95: Guard lifting unit 901, 903, 904: Processing liquid recovery passage 902: Flow path A1: Rotation axis W: Substrate

Claims

1. A substrate processing apparatus for processing a substrate, a rotary holding member that holds a substrate and rotates the substrate around a predetermined rotation axis; a cylindrical processing cup surrounding the rotary holding member; a cup cleaning nozzle provided below the rotating holding member and configured to spray a cleaning liquid toward the processing cup in a fan shape in a plan view; a plurality of the cup washing nozzles are arranged at positions spaced a predetermined distance radially from the rotation axis at equal intervals in a circumferential direction around the rotation axis, In the substrate processing apparatus, each of the cup cleaning nozzles has a cleaning liquid ejection center facing in a direction that is tilted at a predetermined angle in the circumferential direction with respect to the radial direction.

2. the processing cup includes a cylindrical guard that receives liquid splashed outward from the substrate rotated by the rotary holding member, and a cup that receives liquid guided downward by the cylindrical guard; The substrate processing apparatus according to claim 1 , wherein each of the cup cleaning nozzles faces the inner circumferential surface of the cylindrical guard at a fixed interval.

3. 3. The substrate processing apparatus according to claim 1, wherein the cup cleaning nozzle is a nozzle that sprays a fan-shaped jet that spreads at a predetermined angle in a plan view and sprays a linear jet in a substantially horizontal direction in a side view.

4. 4. The substrate processing apparatus according to claim 1, wherein the predetermined angle θ of the cup cleaning nozzle swung in the circumferential direction satisfies 10°≦θ≦30°.

5. The substrate processing apparatus according to claim 4 , wherein seven of the cup cleaning nozzles are provided.

6. 6. The substrate processing apparatus according to claim 1, wherein the cleaning liquid sprayed by the cup cleaning nozzle includes deionized water (DIW).

7. A method for cleaning a processing cup in a substrate processing apparatus according to any one of claims 1 to 6, comprising: A method for cleaning a processing cup in a substrate processing apparatus, in which a VOC processing step using VOCs (volatile organic compounds) is performed, followed by a substrate drying processing step, and the processing cup is cleaned using the cup cleaning nozzle in parallel with the drying processing step.

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