RTV rubber for wafer plating, its preparation method and jig plating method

Abstract

To provide RTV rubber for wafer plating, a method for preparing the same, and a jig plating method.SOLUTION: The RTV rubber comprises components at concentrations of 832 to 856 g / kg of component A and 144 to 168 g / kg of component B, and after mixing the above components, the mixture is filled into a mold for a wafer plating product structure to prepare a plating jig product of precision RTV rubber for wafer plating by a production manufacturing technique for preparing a silicone pressure film. The present invention adjusts and controls hardness parameters of the RTV rubber and an addition proportion of a modified crosslinking agent to obtain processing conditions having an excellent elastic modulus range, and enhances precision and stability in preparing a RTV rubber film for wafer plating, thereby imparting superior mechanical strength and elasticity, ensuring that a sealing structure in a wafer plating region has an excellent sealing effect, and preventing occurrence of infiltration leakage of a plating solution into regions other than a plating region and diffusion infiltration metal deposition.SELECTED DRAWING: None

Description

[Technical Field]

[0001] The present invention relates to the technical field of wafer plating, and in particular to RTV rubber for wafer plating, its preparation method and jig plating method. [Background technology]

[0002] Currently, in the field of wafer plating production, defects such as leakage of plating solution into non-plated areas and the formation of diffusion-penetrated metal deposits frequently occur, seriously affecting the quality of wafer plating products. Because current transmission in integrated circuit devices tends to flow along the surface of conductors, signal distortion and defects due to reflections and standing waves occur during the high-frequency, high-speed signal transmission process in assembled semiconductor integrated circuit devices. During the wafer plating process, when RTV rubber and wafer chips are precisely overlapped and sealed, if the RTV rubber's hardness is too low, the rubber is too soft and easily deforms during compression onto the wafer, preventing the precision required for the plating area during wafer overlap. On the other hand, if the hardness is too high, the RTV rubber lacks elasticity and cannot meet the precision required for wafer compression and overlap, allowing the plating solution to penetrate into non-plated areas and failing to guarantee the wafer plating quality specifications. Therefore, how to create an optimal RTV rubber structure that combines high-precision contouring and appropriate elasticity is a key and challenging issue in the RTV rubber formulation process.

[0003] As semiconductor electronic products become smaller and more multifunctional, wafer chips are constantly being developed in the direction of finer circuitry and smaller volume, the mainstream products of which are HDI (High Density Interconnect) substrates and IC (Integrated Circuit) substrates. To meet the high density and high integration requirements of HDI and IC substrates, nano-precision manufacturing technology of electroplating has been pioneered in the wafer manufacturing industry chain.

[0004] As the requirements for nano-precision manufacturing technology for electroplating increase, innovation in the plating process for wafer RTV rubber is particularly important in this field. High-end semiconductor wafer chip products require highly strict metal plating layers with excellent density, high uniformity, and strong corrosion resistance in various harsh environments. Meeting these requirements through continuous improvement and innovation in the performance of wafer RTV rubber is an important technical indicator for evaluating the wafer deposition nano-metal plating layer manufacturing process.

[0005] The sealant film used in wafer fixtures disclosed in prior patent CN117385437A was part of research into wafer plating, which initially examined the important role that sealant films play in preventing diffusion during wafer plating. During the wafer plating process, diffusion due to poor sealing tends to increase the outer size of the plating layer on wafer-plated products, resulting in uneven plating thickness distribution and poor plating adhesion, which in turn reduces the signal transmission efficiency of semiconductor devices. However, because there are many types of wafer plating solutions, each with a different chemical composition and significantly different corrosive properties, a sealant for wafer plating must be able to perform in a variety of different plating solutions to ensure that diffusion does not occur in wafer-plated products.

[0006] In conventional wafer plating technology, Patent CN114438562A provides a plating jig and plating mechanism that completes plating in localized areas and improves the convenience and efficiency of plating processing, but fails to mention or explain the effects of plating sealants or experimental data. Utility model CN220300890U provides a wafer plating apparatus that uses a clamping mechanism inside the mounting box to clamp and process wafers of different sizes, improving the applicability of the apparatus and achieving excellent overall plating results, while failing to mention or explain anything about wafer sealants. Patent CN117089911A discloses a positive film clamping device for adjusting wafer plating film thickness uniformity, which has the advantage of minimizing the thickness difference between the center and edge plating layers, effectively improving the uniformity of the wafer surface plating layer. Similarly, this invention fails to mention or explain anything about wafer sealants. Patent CN116397291A provides a semiconductor wafer plating process and automatic plating equipment, which controls the plating formation time of various plating layers and performs plating multiple times to ensure the uniformity of the wafer plating layer and ensure that the working mode of the plating process for each wafer is similar, resulting in stable product quality and high production efficiency.Patent CN115233279A discloses an integrated wafer plating apparatus and plating method, which integrates the plating tank, plating system, wafer, and plating tank body into an integrated plating unit.This integrated apparatus maintains stable current flow to the anode plate during the plating consumption process, ensuring normal plating process, effectively avoiding the impact of air bubbles on the metal ion deposition on the wafer surface, and ensuring plating quality. Patent CN114075685A provides a wafer plating jig and wafer plating apparatus, which includes a wafer mounting table, a seal ring, a conductive ring, and a cover plate, the wafer mounting table is used to mount a wafer, the seal ring and the conductive ring are disposed between the wafer mounting table and the cover plate, the cover plate is connected to the wafer mounting table, and a first suction table is provided to adsorb and fix a first wafer to the wafer mounting table.This wafer plating jig has better sealing properties, contributing to improved plating effects and wafer plating quality. Patent CN113957500A provides a wafer plating apparatus including: a support member for providing a supporting force to the wafer along a first direction to support the wafer; and an abutting member for providing pressure to the wafer in a second direction to clamp the wafer together with the support member, the first and second directions being opposite to each other, the support member and the abutting member having opposite first and second surfaces and a notch located at the wafer's edge; a seal ring located on the surface of the support member facing the abutting member for isolating the plating area and the peripheral area of ​​the wafer's surface to be plated; and a sealing member located on the end of the abutting member facing the support member for covering the notch in the wafer and abutting the wafer. While this patent explains the functions of the seal ring and the sealing member based on the structure and principles of the apparatus, the specification does not describe any results or data verification in actual plating operations, so the sealing effect of this invention is not proven.

[0007] As can be seen from the above, there have been no literature reports on solutions to the diffusion problem in wafer plating. The existence of these scientific problems and technical difficulties in the field of wafer plating technology hinders the increasing demand for continuous innovation in high-end electronic component materials in the aerospace, new energy vehicle, and communications electronics industries, and has become a research topic that requires urgent innovation and breakthrough. Summary of the Invention [Problem to be solved by the invention]

[0008] The technical problem to be solved by the present invention is to provide an RTV rubber for wafer plating, a preparation method thereof, and a jig plating method that overcome the shortcomings of the prior art. The present invention adjusts and controls the hardness parameters of the RTV rubber and the proportion of the modified crosslinking agent added to obtain processing conditions with a good range of elastic modulus, and improves the precision and stability of the preparation of the RTV rubber film during wafer plating, thereby providing better mechanical strength and elasticity, ensuring an excellent sealing effect for the sealing structure of the wafer plating area, and preventing the plating solution from seeping into areas other than the plating area and the occurrence of diffusion and metal deposition. [Means for solving the problem]

[0009] The technical means adopted by the present invention to solve the technical problem are: A component 832~856g / kg, Contains B component at a concentration of 144-168g / kg, The A component includes A rubber mix and a platinum complex catalyst, the B component includes B rubber mix, Crosslinkers with adhesion-promoting properties , vinyl hydroxy silicone oil and methyl triethoxy silane, The aforementioned Crosslinking Agent Polyethyleneimine is used as the The rubber mixture A is polydimethyldiphenylvinylsiloxane, The B rubber mixture is polydimethyldiphenylvinylsiloxane, The concentration of the platinum complex catalyst in the component A is 20 to 34 g / kg, and the concentration of the platinum complex catalyst in the component B is The aforementioned Crosslinking Agent The RTV rubber for wafer plating is characterized in that the concentration of the above is 8 to 22 g / kg.

[0010] Furthermore, the concentration of the A rubber mix in the A component is 818 g / kg, and the concentration of the platinum complex catalyst is 14 to 38 g / kg.

[0011] Furthermore, the concentration of the B rubber mix in the B component is 76 to 132 g / kg, the concentration of the crosslinking and adhesion promoter is 12 to 22 g / kg, the concentration of the vinylhydroxysilicone oil is 13 to 26 g / kg, and the concentration of the methyltriethoxysilane is 11 to 20 g / kg.

[0012] Furthermore, the RTV rubber for wafer plating has a hardness of 10 to 100 degrees, an elastic modulus of 1.0 to 3.0 MPa, and a thickness of 2 to 10 mm.

[0013] The RTV rubber for wafers of the present invention establishes a rational crosslinking structure that combines "highly accurate contouring" and "elastic-plastic restoring force." This preparation method significantly contributes to obtaining original silicone rubber for preparing RTV rubber that combines "hardness" and "elasticity" by promoting multidimensional spatial crosslinking of the rubber mix and the crosslinking agent during the vulcanization process. The "highly accurate contouring" refers to the small degree of deformation, high hardness, strong rigidity, and ability to resist external pressure when forming RTV rubber for wafers of various shapes. The "elastic-plastic restoring force" refers to the elastic performance of RTV rubber for wafers of various shapes when subjected to force, and is generally expressed as the elastic modulus. The elastic modulus is a physical index that evaluates the difficulty of elastic deformation and refers to the ratio of stress to strain when the RTV rubber is subjected to external force. The magnitude of the elastic modulus reflects the elastic performance of the RTV rubber when subjected to force; the higher the elastic modulus, the weaker the elasticity; conversely, the lower the elastic modulus, the stronger the elasticity.

[0014] The hardness and modulus of elasticity of RTV rubber are two different physical quantities, and although there is a certain relationship between them, it is not a simple linear relationship.

[0015] Generally, RTV rubbers with higher hardness have higher modulus of elasticity. This is because the increased hardness strengthens the intermolecular interaction, which increases the overall modulus of elasticity of the RTV rubber. However, if the hardness of the RTV rubber is too high, the material may become brittle, reducing its modulus of elasticity. Furthermore, the hardness of RTV rubber is also related to its formulation, and the hardness of RTV rubber varies depending on the formulation.

[0016] Therefore, the relationship between hardness and modulus is not a simple linear relationship but depends on many factors. Therefore, it is necessary to select an RTV rubber starting material with appropriate hardness and modulus to suit the specific application environment and requirements. For example, for RTV rubber products that must withstand high pressure, a material with high hardness must be selected to enhance its rigidity and pressure resistance. For RTV rubber products that require favorable elasticity, a material with low hardness must be selected to maintain its good elastic function. Therefore, selecting the compounding conditions and method for RTV rubber with a reasonable crosslinking structure that combines high hardness and high elasticity is an important basis for ensuring the prevention of diffusion during wafer plating. In other words, it is an important core technology for resolving a series of problems with wafer plating diffusion in conventional technologies.

[0017] in particular, In a clean, dust-free balance room, take two clean SUS304 containers, spray absolute alcohol into the inside of the containers, then wipe them with a clean, dust-free cloth, and finally blow them dry with an oil-free, dust-free air gun (step (1)); Step (2) is to take one of the SUS304 containers cleaned in step (1) and place it on the platform of an electronic balance, first add the A rubber mixture, then add the platinum complex catalyst in small amounts several times while stirring to obtain the A component, and the concentration of the A rubber mixture in the A component is 818 g / kg and the concentration of the platinum complex catalyst is 14 to 38 g / kg; Step (3) is taken from another SUS304 container cleaned in step (1) and placed on the platform of an electronic balance, and firstly, B rubber mixture is added, and then while stirring, cross-linking and adhesion promoter, vinyl hydroxy silicone oil, and methyl triethoxy silane are added in small amounts in order several times to obtain B component, and the concentration of B rubber mixture in B component is 76 to 132 g / kg, the concentration of cross-linking and adhesion promoter is 12 to 22 g / kg, the concentration of vinyl hydroxy silicone oil is 13 to 26 g / kg, and the concentration of methyl triethoxy silane is 11 to 20 g / kg; and step (4) mixing component B obtained in step (3) with component A obtained in step (2) and stirring continuously for 10 to 15 minutes, and then injecting the compounded rubber into molds corresponding to various wafer shapes designed in accordance with RTV rubber production conditions, and performing various treatments according to the production conditions to obtain RTV rubber for wafer plating, in which the concentration of component A in the RTV rubber is 832 to 856 g / kg and the concentration of component B is 144 to 168 g / kg.

[0018] This is a method that uses the RTV rubber for wafer plating mentioned above, specifically: Step S1: Selecting a corresponding RTV rubber for wafer plating according to the shape of the wafer plating area; Step S2: selecting a manufacturing thickness of the RTV rubber for wafer plating and adjusting and controlling the optimal hardness of the RTV rubber; Step S3: adjusting and controlling the types of platinum complex catalyst and crosslinking and adhesion promoter according to the type of wafer plating solution to adjust the appropriate hardness and elastic modulus of the RTV rubber; Step S4: checking and controlling the deformation range of the RTV rubber plating area shape through production control of the hardness and elastic modulus of the RTV rubber; Step S5: Place the RTV rubber and the plated wafer workpiece on a dedicated plating jig, and check and control the deformation range of the shape of the RTV rubber plating area again. Step S6: performing processing according to the wafer plating process flow to complete the required wafer plating process; Step S7 of evaluating the plating status of the plated wafer workpiece; Step S8: determining the performance index of the wafer-plated RTV rubber based on the evaluation results; If the RTV rubber performance index determines that the wafer quality is met, steps S5 to S8 are repeated to continuously carry out the production process of the plated wafer workpiece; conversely, if the RTV rubber performance index determines that the wafer quality is not met, the wafer-plated RTV rubber is redesigned and the entire flow from step S1 is repeated in step S9 until the wafer-plated product quality is met. [Effects of the Invention]

[0019] The beneficial effects of the present invention are as follows: The present invention has a rational design and a simple preparation method, and has the following advantages: (1) The wafer-plated RTV rubber of the present invention is applicable to the special plating process of high-end precision electronically plated workpieces, and can realize the goal of plating high-end precision electronically plated workpieces to produce wafer-plated products. (2) The plating method of the present invention is easy to operate and can simply and efficiently produce wafer-plated products without diffusion and penetration, with high uniformity, excellent density, and strong corrosion resistance in various harsh environments. It also has the ability to solve problems such as the tendency for the outer size of the plating layer of wafer-plated products to increase due to diffusion and penetration caused by poor sealing, the uneven thickness distribution of the plating layer, poor adhesion of the plating layer, and reduced signal transmission efficiency of semiconductor devices, resulting in performance that does not meet standards. The plating method can provide various high-end precision electronic devices with complex shapes and can be widely applied in the fields of plating of high-end electronic products such as wafer chip manufacturing, 3D integration and device packaging, sensors, micro-nano device manufacturing, microelectromechanical systems, and components.

[0020] In order to more clearly describe the specific embodiments of the present invention or the technical means in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly described below. Of course, the drawings described below are only some embodiments of the present invention, and those skilled in the art can come up with other drawings based on these drawings without any creative effort. [Brief explanation of the drawings]

[0021] [Figure 1] 1 is a process flow chart of the jig plating method of the present invention. [Figure 2] FIG. 39 is a schematic diagram of a plated workpiece to be processed in Example 39. [Figure 3]FIG. 10 is a schematic diagram showing the RTV rubber being charged into the plated workpiece in Example 39. [Figure 4] FIG. 10 is a schematic diagram of test points in the plating area of ​​the plated workpiece of Example 39. [Figure 5] 1 is a curve graph of hardness and modulus of elasticity for Examples 1 to 13. [Figure 6] 1 is a curve graph of hardness and elastic modulus for Examples 14 to 26. DETAILED DESCRIPTION OF THE INVENTION

[0022] It should be noted that the following detailed description is all exemplary and is intended to further explain the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art.

[0023] It should be noted that the terminology used herein is for the purpose of describing specific embodiments only and is not intended to limit the exemplary embodiments according to the present application. For example, unless the context clearly dictates otherwise, the singular forms used herein also include the plural forms, and it should also be understood that the use of terms such as "comprises" and / or "includes" herein indicates the presence of features, steps, operations, devices, assemblies, and / or combinations thereof.

[0024] In the following, the technical means of the present invention will be clearly and completely described with reference to the embodiments, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and are not all of the embodiments. Based on the embodiments of the present invention, all other embodiments that can be obtained by those skilled in the art without any creative efforts shall fall within the protection scope of the present invention.

[0025] As shown in FIG. 1, this is a method using the RTV rubber for wafer plating manufactured by the present invention, specifically, Step S1: Selecting a corresponding RTV rubber for wafer plating according to the shape of the wafer plating area; Step S2: selecting a manufacturing thickness of the RTV rubber for wafer plating and adjusting and controlling the optimal hardness of the RTV rubber; Step S3: adjusting and controlling the type of modifier according to the type of wafer plating solution to adjust the hardness and elastic modulus of the RTV rubber appropriately; Step S4: checking and controlling the deformation range of the RTV rubber plating area shape through production control of the hardness and elastic modulus of the RTV rubber; Step S5: Place the RTV rubber and the plated wafer workpiece on a dedicated plating jig, and check and control the deformation range of the shape of the RTV rubber plating area again. Step S6: performing processing according to the wafer plating process flow to complete the required wafer plating process; Step S7 of evaluating the plating status of the plated wafer workpiece; Step S8: determining various performance indicators such as sealing and shielding of the wafer plating RTV rubber based on the evaluation results; This is a jig plating method that includes: if the various performance indexes of the RTV rubber indicate that the result matches the wafer quality, steps S5 to S8 are repeated to continuously carry out the production process of the plated wafer workpiece; and conversely, if the result does not match the product quality requirements, step S9 is required to redesign the wafer-plated RTV rubber and repeat all the steps from step S1 until the quality of the wafer-plated product is met.

[0026] Example 1 This is RTV rubber for wafer plating, and 1kg of RTV rubber is A ingredient 832g, It contains 168g of B component, Wherein, the concentration of the A rubber compound in the A component is 818g, and the concentration of the platinum complex catalyst is 14g; The concentration of B rubber mixture in component B is 126 g, the concentration of cross-linking and adhesion promoter is 18 g, the concentration of vinyl hydroxy silicone oil is 13 g, and the concentration of methyltriethoxysilane is 11 g; Among them, polydimethyldiphenylvinylsiloxane is used as the rubber compound A, with the specification number MY-120 (manufactured by Anhui Mingyi Silicon Industry Co., Ltd.), the phenyl content is 30-40wt%, and the molecular weight is 650,000-800,000; B. The rubber compound is polydimethyldiphenylvinylsiloxane, the specification number of which is MY-34 (manufactured by Anhui Mingyi Silicon Industry Co., Ltd.), the phenyl content is 5-15 wt%, and the molecular weight is 400,000-600,000; The platinum complex catalyst used is diethylenetetramethyldisiloxane platinum complex, the specification number is MY-8100 (manufactured by Anhui Mingyi Silicon Industry Co., Ltd.), and the active substance content is ≥ 20%. The polyethyleneimine SP series was used as a crosslinking and adhesion promoter, with the specification number SP-018 (a product of Nippon Shokubai Co., Ltd., sold on behalf of the manufacturer, Shanghai Le Lun New Materials Science and Technology Co., Ltd.), a molecular weight of 1800, and a viscosity of 8500-15000 mPa.s at 25°C.

[0027] (Examples 2 to 13) The concentration range of the A rubber mix in component A is 794-818g, and the concentration of the platinum complex catalyst changes correspondingly from 14-38g in Table 1; Component B was the same as in Example 1, and there were no differences.

[0028] [Table 1]

[0029] After compounding in Examples 1 to 13, the mixture was poured into molds corresponding to the various wafer shapes designed, and various treatments were carried out according to the production conditions to obtain RTV rubber for wafer plating.

[0030] The RTV rubber samples to be tested for hardness and modulus were 15 mm x 15 mm in size and 8 mm thick. The hardness of the RTV rubber was tested according to the method specified in the Chinese standard GB / T 531.1-2008. Five samples were taken for each example, and five data points were obtained through testing. The hardness was expressed in Shore A. The test results for Examples 1 to 13 are shown in Table 2, and Figure 5 was created.

[0031] [Table 2]

[0032] As can be seen from the test data shown in Table 2, as the amount of platinum complex catalyst used in Examples 1 to 13 increased, the average hardness gradually increased from 3.4 Short A to 92.8 Short A.

[0033] The elastic modulus of RTV rubber was tested in accordance with Chinese Standard GB / T 12830-2008 (Determination of shear modulus and adhesive strength of vulcanized or thermoplastic rubber to rigid plates) and Chinese Chemical Industry Standard HG / T 3321-2012 (Determination method for elastic modulus of vulcanized rubber).

[0034] The formula for calculating bulk modulus is K=p / (-dV / V), where an RTV rubber (elastomer) test sample is subjected to a total pressure p, which is called the "volumetric stress." The volumetric loss of the elastomer (-dV) divided by the original volume V is called the "volumetric strain."

[0035] Elastic modulus is an important mechanical parameter of a material, and indicates the elastic deformation that occurs when the material is subjected to force. It represents the strain per unit of material generated by a unit of stress, and is generally measured in Pascal (Pa) or Megapascal (MPa). The higher the elastic modulus, the stronger the material's ability to respond to stress and the better its deformation resistance.

[0036] The RTV rubber elastic modulus test results for Examples 1 to 13 are shown in Table 3, and FIG. 5 was prepared.

[0037] [Table 3]

[0038] As can be seen from the test data shown in Table 3, the average elastic modulus gradually increased from 101 MPa to 772 MPa as the amount of platinum complex catalyst used increased in Examples 1 to 11. When comparing 775 MPa in Example 12 with 772 MPa in Example 11, they were almost the same, but when comparing 750 MPa in Example 13 with the average value of 775 MPa in Example 12, they began to decrease.

[0039] The degree of shape change of the RTV rubber during use of the wafer plating jig directly affects the precision of the plating area. The greater the shape change, the lower its hardness, which reduces the size of the RTV rubber's plating solution nozzle and reduces the plating area, making it impossible to meet the plating specification requirements. Conversely, the smaller the shape change, the greater its hardness, which minimizes the change in the size of the RTV rubber's plating solution nozzle, ensuring that the plating area remains almost constant, thereby meeting the plating area specification requirements.

[0040] The shape change of RTV rubber is closely related to its hardness and two concepts in solid mechanics: elastic deformation and modulus of elasticity. The hardness of RTV rubber refers to the ability of a silicone material to locally resist the pressure of a hard object on its surface. In solid mechanics, elastic deformation refers to the ability of silicone to return to its original state after an external force is removed from a shape or size change that has occurred, and modulus of elasticity reflects the material's ability to resist elastic deformation due to stress. There is a close relationship between the hardness of RTV rubber and the elastic deformation and modulus of elasticity in solid mechanics.

[0041] First, the hardness of RTV rubber refers to the ability of the silicone material to locally resist the pressure of a hard object against its surface, while elastic deformation refers to the ability of an object to return to its original state after being subjected to an external force. The degree of elastic deformation of RTV rubber depends on the hardness of the material. The greater the hardness, the stronger the material's ability to resist external forces and the smaller the degree of elastic deformation. Conversely, the lower the hardness, the weaker the material's ability to resist external forces and the greater the degree of elastic deformation. From the above results, it was observed that hardness and elastic deformation are inversely proportional.

[0042] Next, the relationship between elastic deformation and elastic modulus can be analyzed at the microscopic level. In solid materials, atoms are connected by chemical bonds to form a crystalline structure. When an external force acts on the material, the bonds between these atoms elastically deform, causing the entire crystal to elastically deform. The degree of elastic deformation depends on the material's elastic modulus. The larger the elastic modulus, the stronger the material's ability to resist external forces and the smaller the degree of elastic deformation. Conversely, the smaller the elastic modulus, the weaker the material's ability to resist external forces and the greater the degree of elastic deformation. Therefore, it can be assumed that elastic deformation and elastic modulus are inversely proportional to each other.

[0043] Furthermore, the relationship between elastic deformation and elastic modulus can be analyzed from a more macroscopic perspective. Elastic deformation is closely related to the magnitude of the external force and the geometric shape of the material. In theoretical mechanics, the force-bearing state of an object is studied using a mechanical quantity, vector, which indicates the magnitude and direction of the force. When an external force acts on an object, stress is generated within the object, and according to Hooke's law, stress is directly proportional to strain. Here, strain is a geometric expression of elastic deformation. The magnitude of elastic deformation is directly related to the elastic modulus of the material; the larger the elastic modulus, the smaller the strain of the material, and the smaller the elastic modulus, the greater the strain of the material. Therefore, elastic deformation and elastic modulus are inversely proportional.

[0044] Finally, the inverse relationship between elastic deformation and modulus can be further analyzed from an application perspective. Elastic deformation and modulus are important parameters in design and processing. When designing RTV rubber, it is important to select the appropriate material and modulus to enhance product performance and lifespan. For example, when designing RTV rubber for wafer plating, a material with a high modulus must be selected to enable precise compression of the RTV rubber to the plating jig and wafer surface and prevent diffusion due to plating solution penetration.

[0045] To summarize, there is a close relationship between the hardness, modulus, and elastic deformation of RTV rubber. Whether analyzing from a microscopic or macroscopic level, the relationship between elastic deformation and modulus can be found. There is an inverse relationship between elastic deformation and modulus: the larger the modulus, the smaller the elastic deformation, and vice versa. Therefore, in practical applications, the relationship between elastic deformation and modulus also has an important impact on product design and processing. Therefore, rational selection of materials and modulus can improve product performance and lifespan.

[0046] Generally, the higher the hardness of RTV rubber, the higher the elastic modulus and the smaller the elastic deformation. Therefore, in the production and application of RTV rubber products, the hardness, elastic modulus and deformation of the rubber material can be controlled according to different needs to achieve the required performance.

[0047] As can be seen from Figure 5, Examples 12 and 13 show a gradual increase in hardness, and their modulus of elasticity begins to decline when compared with Example 11. The modulus of elasticity of RTV rubber is directly proportional to its hardness, and as hardness increases, the modulus also increases. However, when the hardness approaches a critical value, the elasticity no longer exists and the modulus drops sharply. Therefore, it can be inferred that the upper limit of the platinum complex catalyst content in the RTV rubber is Example 11.

[0048] Furthermore, the RTV rubbers of Examples 1 to 3 have a hardness lower than 10 Shore A, and if they are too soft, they cannot be used in wafer plating jigs. Therefore, it can be assumed that the lower limit of the RTV rubber compounding ratio is Example 4. Furthermore, the elastic modulus of the RTV rubbers of Examples 12 and 13 tends to decrease, and if the RTV rubber is too hard, it will lose its elasticity. After excluding the above-mentioned five Examples, the range of examples of RTV rubber for wafer plating is Examples 4 to 11, that is, the compounding range of the platinum complex catalyst used in component A of the RTV rubber was 20 to 34 g.

[0049] Furthermore, the amount of platinum complex catalyst used in Examples 1 to 13 was quantified based on the total weight of each preparation, allowing for a clearer observation of the effect of the platinum complex catalyst on the hardness and modulus of the RTV rubber. The calculation and statistical results are shown in Table 4, where the catalyst is the platinum complex catalyst and the crosslinking agent is the crosslinking and adhesion promoter.

[0050] [Table 4]

[0051] In Table 4, the catalyst occupancy ratio and crosslinking agent occupancy ratio for each of Examples 1 to 13 are calculated using the following formulas.

number

[0052] As can be seen from Table 4, when the amount of platinum complex catalyst used in Component A in Examples 4 to 11 was 20 to 34 g, the range of the catalyst occupation ratio was 2.0% to 3.4%, more preferably 2.2% to 3.20%, and most preferably 2.4% to 3.0%, under the condition that the crosslinking agent occupation ratio remained unchanged at 1.80%.

[0053] In other words, the most preferable ranges are Examples 6 to 9, where the average hardness range was 33.8 to 69.9 ShordA and the average elastic modulus range was 360 to 599 MPa.

[0054] RTV rubber is a high-molar mass polysiloxane with a Si-O (silicon-oxygen) bond structure, primarily composed of a high-molecular-weight polysiloxane. The Si-O-Si (silicon-oxygen-silicon) bond is its basic bond type, and the silicon atom is primarily linked to alkyl groups, though it can also be linked to modified alkyl groups. This gives RTV rubber superior heat resistance, electrical insulation, and chemical stability. Its surface also possesses unique water repellency, anti-stick properties, and excellent anti-penetration performance when pressed against a wafer. This prevents the plating solution from penetrating the RTV workpiece during wafer plating, ensuring that the non-plated areas of the wafer are not immersed in the plating solution, thereby achieving the goal of manufacturing high-precision semiconductor wafer electronic products.

[0055] Example 14 This is RTV rubber for wafer plating, and 1kg of RTV rubber is A ingredient 846g, It contains 154g of component B, Wherein, the mass of the rubber compound A in component A is 818 g, and the mass of the platinum complex catalyst is 28 g; In the B component, the mass of the B rubber mix was 128 g, the mass of the crosslinking and adhesion promoter was 2 g, the mass of the vinyl hydroxy silicone oil was 13 g, and the mass of the methyltriethoxysilane was 11 g.

[0056] (Examples 15 to 26) The range of the B rubber mix in component B was 104 to 126 g, and the crosslinking and adhesion promoter changed correspondingly from 4 to 26 g in Table 5, but there were no differences other than the same as in Example 14.

[0057] [Table 5]

[0058] After compounding in Examples 14 to 26, the mixtures were poured into molds corresponding to the various wafer shapes designed, and various treatments were carried out according to the production conditions to obtain RTV rubbers for wafer plating.

[0059] The RTV rubber samples to be tested for hardness and modulus were 15 mm x 15 mm in size and 8 mm thick. The hardness of the RTV rubber was tested according to the method specified in Chinese standard GB / T 531.1-2008. Five samples were taken for each example, and five data points were obtained. The hardness was expressed in Shore A units. The test results for Examples 14 to 26 are shown in Table 6. The RTV rubber elastic modulus test results for Examples 14 to 26 are shown in Table 7, and Table 6 and Table 7 are also plotted in Figure 6.

[0060] [Table 6]

[0061] [Table 7]

[0062] As can be seen from Figure 6, Examples 25 and 26 show a gradual increase in hardness, and their modulus results begin to show a downward trend when compared with Example 24. The modulus of RTV rubber is directly proportional to its hardness; as hardness increases, the modulus also increases. However, when the hardness approaches a critical value, the elasticity no longer exists and the modulus drops sharply. Therefore, it can be inferred that the upper limit of the crosslinking and adhesion promoter content in the RTV rubber formulation is Example 24.

[0063] Furthermore, the RTV rubbers of Examples 14 to 16 had hardnesses lower than 10 Shore A, and if they were too soft, they could not be used in wafer plating jigs. Therefore, it can be inferred that the lower limit of the RTV rubber compounding ratio is Example 17. Furthermore, the elastic modulus of the RTV rubbers of Examples 25 and 26 tended to decrease, and if the RTV rubber was too hard, it would lose its elasticity. After excluding the above-mentioned five Examples, the range of examples of RTV rubber for wafer plating was Examples 17 to 24, that is, the range of use of crosslinking and adhesion promoter in component B of the RTV rubber was 8 to 22 g.

[0064] Furthermore, by quantifying the amount of crosslinking agent used in Examples 14 to 26 based on the total weight of each preparation recipe, the influence of the amount of crosslinking agent used on the hardness and elastic modulus of the RTV rubber could be more clearly observed, and the calculation statistics results are shown in Table 8.

[0065] [Table 8]

[0066] As can be seen from Table 8, when the amount of crosslinking and adhesion promoter used in component B in Examples 17 to 24 was 8 to 22 g, the range of the crosslinking agent proportion was 0.8% to 2.2%, a more preferred range was 1.2% to 2.2%, and the most preferred range was 1.4% to 2.0%, under the condition that the catalyst proportion remained unchanged at 2.8%.

[0067] In other words, the most preferable ranges are Examples 20 to 23, where the average hardness range was 46.3 to 77.4.Shord A and the average elastic modulus range was 425 to 675 MPa.

[0068] Furthermore, the performance of Examples 6 to 9 and Examples 20 to 23, which fall within the most preferable ranges, was calculated, and the results are shown in Table 9.

[0069] [Table 9]

[0070] As can be seen from Table 9, under the conditions where the amount of catalyst used in component A in Examples 6 to 9 and Examples 20 to 23 was 24 to 30 g and the amount of crosslinking agent used in component B was 14 to 20 g, i.e., the catalyst occupancy ratio was 2.4% to 3.0% and the crosslinking agent occupancy ratio range was 1.4% to 2.0%, the hardness range of the RTV rubber was 33.8 to 77.4 Shoed A and its elastic modulus range was 360 to 675 MPa.

[0071] The most preferred example ranges provide a solid basis for formulating RTV rubbers for wafer plating applications of the present invention. Further, RTV rubbers may be formulated within the most preferred ranges for various wafer plating applications.

[0072] RTV rubbers for wafer plating were prepared and compounded, specifically as shown in Examples 27 to 32.

[0073] Example 27 RTV rubber prepared in Example 7: 600 g. RTV rubber prepared in Example 21: 400 g. Mass ratio of RTV rubbers of Example 7 and Example 21: 3:2.

[0074] The component blending ratios of Examples 28 to 32 are shown in Table 10.

[0075] [Table 10]

[0076] In Examples 27 to 32, the compounding ratios of the example components in Table 10 were used, and the corresponding wafer RTV rubbers and test samples were prepared in the same manner as in Example 1, and tested in the same manner to obtain the RTV rubber hardness and elastic modulus. The results are shown in Tables 11 and 12.

[0077] [Table 11]

[0078] As can be seen from Table 11, Example 27 was prepared by mixing Example 7 and Example 21 in a 3:2 ratio, with Example 7 having an average hardness of 45.6 Shore A and Example 21 having an average hardness of 58.3 Shore A. After preparation and compounding as Example 27, the average hardness was 52.1 Shore A. Therefore, by compounding two rubbers of different hardnesses in the appropriate ratio, it is possible to obtain a rubber of any hardness between the original two different hardnesses.

[0079] [Table 12]

[0080] As can be seen from Table 12, Example 27 was prepared by mixing Example 7 and Example 21 in a 3:2 ratio, with Example 7 having an average modulus of 441 MPa and Example 21 having an average modulus of 490 MPa. After preparation and compounding as Example 27, its average modulus was 474 MPa. Therefore, by compounding two rubbers with different moduli in the appropriate ratio, it is possible to obtain a rubber with any modulus between the original two different moduli.

[0081] In the actual production process of RTV rubber for wafer plating, two existing rubber materials with different hardnesses can be used to compound the required RTV rubber for wafer plating with any hardness between the two different hardnesses by using the preparation and compounding method of the present invention.

[0082] In practice, this reduces unnecessary compounding work, increases efficiency, and allows RTV rubber for wafer plating to be compounded in one step. The present invention provides a method for estimating the required compounding data for RTV rubber for wafer plating from the data of two rubber materials with different hardnesses, and the estimation formula is as shown below.

number

[0083] As can be seen from the above formula, the required hardness of the wafer-plated RTV rubber can be obtained by practical calculation using one known high-hardness rubber material and one known low-hardness rubber material. The calculation results for Examples 27 to 32 are shown in Table 13.

[0084] [Table 13]

[0085] [Table 14]

[0086] As can be seen from the results in Tables 13 and 14, the empirical calculation method for the hardness of RTV rubber for wafer plating of the present invention is characterized by being very convenient, flexible, and highly efficient. In particular, based on the actually detected hardness, the error range of the RTV rubber hardness obtained by the empirical calculation method is only -2.7% to 2.3%, proving that the compounding methods for RTV rubber for wafer plating of Examples 27 to 32 and the empirical calculation method for quickly determining the required hardness are very effective and reliable practical tools.

[0087] Furthermore, the compounding requirements for RTV Compounding Example 33, which are simpler and more straightforward in actual RTV rubber compounding operations, were an RTV rubber target hardness of 50 Shore A and a required weight of 800 grams.

[0088] First, appropriate high-hardness rubber and low-hardness rubber were selected. Example 22, which has a hardness higher than 50 Shore A in Table 6, was used as the high-hardness rubber material, with a hardness of 70.3 Shore A. Example 6, which has a hardness lower than 50 Shore A, was used as the low-hardness rubber material, with a hardness of 33.8 Shore A.

[0089] Weight of low hardness rubber = (high hardness power - target hardness power) ÷ (high hardness power - low hardness power) × required weight =(70.3-50)÷(70.3-33.8)×800 =20.3÷36.5×800 = 445 grams Weight of high hardness rubber = required weight - weight of low hardness rubber =800-444.9 = 355 grams

[0090] (Examples 34 to 38) Using the same method as in Example 33, the hardness and required compounding weight of the wafer-plated RTV rubber of Examples 34 to 38 were determined, and then the results for the high-hardness rubber material and the low-hardness rubber material were calculated and shown in Table 15.

[0091] [Table 15]

[0092] As can be seen from Table 15, in preparing the RTV rubber for wafer plating, the weights of the high and low hardness rubbers to be used can be determined very easily by simply determining the required target hardness and compounding weight. According to the above preparation and compounding method, an RTV rubber for wafer plating can be obtained, and used in a wafer plating jig to plate semiconductor wafer electronic products.

[0093] Example 39 FIG. 2 shows the plated wafer workpiece 10 to be processed. The RTV rubber and plated wafer workpiece shown in FIG. 3 were placed in a dedicated plating jig. Here, the silicone compounded in Example 36 was used as the RTV rubber, and after plating, the effect of the plated wafer workpiece was verified and a film thickness test was performed. The gold plating standard film thickness of the plated workpiece sample was 780 nm or more, and the test points are shown in FIG. 4.

[0094] In the film thickness test of the plated wafer workpiece 10 in Example 39, the coordinates of the central black dots ● of each wafer plating area unit 11 I to VII of the plated wafer workpiece 10 in Figure 4 were as follows: Column I: 4 (3.24 mm, 15.62 mm), 8 (3.24, 12), 12 (3.24, 8.32), 16 (3.24, 4.64); Column II: 3 (5.55, 16.54), 7 (5.55, 12.86), 13 (5.55, 7.43), 17 (5.55, 3.80); Column III: 2 (7.86 mm, 17.46 mm), 6 (7.86, 18.38), 10 (7.86, 10.16), 14 (7.86, 6.52), 18 (7.86, 2.89). Row IV: 1 (10.16 mm, 18.35 mm), 5 (10.16 mm, 14.71 mm), 9 (10.16 mm, 11.07 mm), 11 (10.16 mm, 9.25 mm), 15 (10.16 mm, 5.61 mm), and 19 (10.16 mm, 1.97 mm). Row V: 4 (12.47 mm, 15.62 mm), 8 (12.47 mm, 12 mm), 12 (12.47 mm, 8.36 mm), and 16 (12.47 mm, 4.72 mm). Row VI: 3 (14.78 mm, 16.54 mm), 7 (14.78 mm, 12.90 mm), 13 (12.47 mm, 7.44 mm), and 17 (12.47 mm, 3.80 mm). 6 (14.78 mm, 18.38 mm), 10 (17.09, 10.16), and 14 (17.09, 6.52) in column VII.

[0095] In a film thickness test of the prepared plated wafer workpiece 10 of Example 39, automatic detection was performed using a FischerSCOPE X-RAY XDV-SDD detector manufactured by Fischer, according to the test position of the plated wafer workpiece 10 shown in FIG. 4, and the detected gold plating film thickness test data Max, Min, Ave., and Max-Min values ​​are shown in Table 16.

[0096] [Table 16]

[0097] As can be seen from the data in Table 16, to meet the gold plating thickness specification of ≥ 780nm, the minimum value Min range of 783nm meets the specification requirement, while the Max range of 831nm of film thickness around the edge of the plated workpiece has a high distribution, the Max-Min difference data is in the range of 48nm, and the film thickness error is only 6.1% for the target plating layer thickness of 780nm. Here, the film thickness error is calculated using the following formula.

number

[0098] Therefore, in wafer plating, when the RTV rubber of the present invention is used as a masking jig for the plating area, it is possible not only to prevent the penetration of the plating solution and the diffusion and penetration of the plated workpiece, but also to achieve a plating effect with a very uniform gold plating film thickness distribution over the entire plated workpiece.

[0099] To sum up, the present invention has a rational design, a simple preparation method, and the following advantages: (1) The wafer-plated RTV rubber of the present invention is applicable to the special plating process of high-end precision electronically plated workpieces, and can achieve the goal of plating high-end precision electronically plated workpieces to produce wafer-plated products. (2) The plating method of the present invention is easy to operate and can simply and efficiently produce wafer-plated products without diffusion, with high uniformity, excellent density, and strong corrosion resistance in various harsh environments. It also has the ability to solve problems such as the tendency for the outer size of the plating layer of wafer-plated products to increase due to diffusion caused by poor sealing, the uneven thickness distribution of the plating layer, poor adhesion of the plating layer, and reduced signal transmission efficiency of semiconductor devices, resulting in performance that does not meet standards. The plating method can be widely applied to the plating of various high-end precision electronic devices with complex shapes, such as wafer chip manufacturing, 3D integration and device packaging, sensors, micro-nano device manufacturing, microelectromechanical systems, components, and other high-end electronic products.

[0100] Finally, it should be noted that the above embodiments are merely for explaining the technical means of the present invention and are not intended to limit the same, and although the present invention has been described in detail with reference to the above embodiments, it is possible to modify the technical means described in the above embodiments or to implement equivalent replacements for part or all of the technical features, and it is obvious to those skilled in the art that such modifications or replacements will not deviate from the scope of the technical means of the embodiments of the present invention. [Explanation of symbols]

[0101] 10.Plated wafer work 11.Wafer plating area unit 20. RTV rubber for wafer plating 21. Through-hole unit in wafer plating area of ​​RTV rubber

Claims

1. A component 832-856g / kg, Contains a concentration of component B of 144 to 168 g / kg, The A component comprises A kneaded rubber and a platinum complex catalyst, and the B component comprises B kneaded rubber, a crosslinking agent having adhesion promoting properties, vinyl hydroxy silicone oil and methyl triethoxy silane, wherein the crosslinking agent is polyethyleneimine; The rubber mixture A is polydimethyldiphenylvinylsiloxane, The B rubber mixture is polydimethyldiphenylvinylsiloxane, An RTV rubber for wafer plating, characterized in that the concentration of the platinum complex catalyst in the component A is 20 to 34 g / kg, and the concentration of the crosslinking agent in the component B is 8 to 22 g / kg.

2. The RTV rubber for wafer plating according to claim 1, characterized in that the concentration of the A rubber mix in the A component is 818 g / kg, and the concentration of the platinum complex catalyst is 20 to 34 g / kg.

3. The RTV rubber for wafer plating according to claim 1, characterized in that the concentration of the B rubber mix in the B component is 76 to 132 g / kg, the concentration of the crosslinking agent is 12 to 22 g / kg, the concentration of vinylhydroxysilicone oil is 13 to 26 g / kg, and the concentration of methyltriethoxysilane is 11 to 20 g / kg.

4. 2. The RTV rubber for wafer plating according to claim 1, characterized in that it has a hardness of 10 to 100 degrees, an elastic modulus of 1.0 to 3.0 MPa, and a thickness of 2 to 10 mm.

5. Step (1) of taking two clean SUS304 containers in a clean, dust-free balance room, spraying absolute alcohol into the inside of the containers, then wiping them with a clean, dust-free cloth, and finally blowing them dry with an oil-free, dust-free air gun; Step (2) is to take one of the SUS304 containers cleaned in step (1), place it on the platform of an electronic balance, first add the A rubber mix, and then add the platinum complex catalyst in small amounts several times while stirring to obtain the A component, the concentration of the A rubber mix in the A component being 818 g / kg, and the concentration of the platinum complex catalyst being 20 to 34 g / kg; Step (3) takes another SUS304 container cleaned in step (1) and places it on the platform of an electronic balance, first adds the B rubber mixture, then adds the crosslinking agent with adhesion promoting properties, vinyl hydroxysilicone oil, and methyltriethoxysilane in small amounts in order several times while stirring to obtain component B, in which the concentration of the B rubber mixture in component B is 76-132 g / kg, the concentration of the crosslinking agent is 12-22 g / kg, the concentration of the vinyl hydroxysilicone oil is 13-26 g / kg, and the concentration of the methyltriethoxysilane is 11-20 g / kg; and step (4) of mixing the B component obtained in step (3) with the A component obtained in step (2), stirring for 10 to 15 minutes, and then injecting the compounded rubber into a mold corresponding to the various wafer shapes designed and curing it at room temperature to obtain an RTV rubber for wafer plating, wherein the concentration of the A component in the RTV rubber is 832 to 856 g / kg and the concentration of the B component is 144 to 168 g / kg.

6. A method employing the RTV rubber for wafer plating according to any one of claims 1 to 4, Step S1: Selecting a corresponding RTV rubber for wafer plating according to the shape of the wafer plating area; Step S2: selecting the manufacturing thickness of the RTV rubber for wafer plating and adjusting and controlling the optimum hardness of the RTV rubber; Step S3: adjusting and controlling the types of platinum complex catalyst and cross-linking agent having adhesion promoting properties according to the type of wafer plating solution to adjust the appropriate hardness and elastic modulus of the RTV rubber; Step S4: checking and controlling the deformation range of the shape of the RTV rubber plating area through production control of the hardness and elastic modulus of the RTV rubber; Step S5: Place the RTV rubber and the plated wafer workpiece on a dedicated plating jig, and check and control the deformation range of the shape of the RTV rubber plating area again. Step S6: performing processing according to the wafer plating process flow to complete the required wafer plating process; Step S7 of evaluating the plating status of the plated wafer workpiece; Step S8: determining the performance index of the wafer-plated RTV rubber based on the evaluation results; If the performance index of the RTV rubber indicates that the result matches the wafer quality, steps S5 to S8 are repeated to continuously carry out the production process of the plated wafer workpiece; conversely, if the result does not match the product quality requirements, step S9 is performed to redesign the wafer-plated RTV rubber and repeat all the steps from step S1 until the quality of the wafer-plated product is met.

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