Push-pull power supply for multi-mesh processing chambers

Abstract

A radio frequency (RF) power circuit for a multi-electrode cathode of a processing chamber can include an RF source and one or more inductive elements conductively coupled to the RF source. A first inductive element can be inductively coupled to the one or more inductive elements, and the first inductive element can be configured to receive a first portion of RF power transmitted from the RF source and deliver the first portion of the RF power to a first pedestal electrode of the processing chamber. A second inductive element can also be inductively coupled to the one or more inductive elements, and the second inductive element can be configured to receive a second portion of RF power transmitted from the RF source through the one or more inductive elements and deliver the second portion of RF power to a second pedestal electrode.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of and priority to U.S. Non-Provisional Application No. 17 / 068,994, entitled "PUSH-PULL POWER SUPPLY FOR MULTI-MESH PROCESSING CHAMBERS," filed October 13, 2020, the entire contents of which are incorporated herein by reference.

[0002] The present disclosure relates generally to systems and methods for regulating plasma in semiconductor substrate manufacturing processes. More specifically, the present disclosure describes systems and methods for controlling individual radio frequency (RF) voltages applied to different conductive meshes of a pedestal to uniformly control the plasma. [Background technology]

[0003] In the fabrication of integrated circuits and other electronic devices, plasma processes are often used to deposit or etch various material layers. The plasma-enhanced chemical vapor deposition (PECVD) process is a chemical process in which electromagnetic energy is applied to at least one precursor gas or vapor to convert the precursor into a reactive plasma. The plasma can be generated inside the process chamber, i.e., in situ, or it can be generated with a remote plasma generator positioned remotely from the process chamber. This process is widely used to deposit materials on substrates to produce high-quality, high-performance semiconductor devices.

[0004] Transistor structures are becoming increasingly complex and challenging as feature sizes shrink. To meet processing demands, advanced process control techniques are useful to control costs and maximize substrate and die yield. Typically, if the plasma is not uniformly controlled across the surface area of ​​the substrate, die at specific locations on the substrate will be subject to yield issues. At the substrate processing level, advances in process uniformity control are required to control the plasma, allowing for fine, localized process adjustments as well as global process adjustments across the entire substrate. Therefore, there is a need for methods and apparatus that allow for fine, localized process adjustments across the entire substrate. Summary of the Invention

[0005] In some embodiments, a radio frequency (RF) power supply circuit for a multi-electrode cathode of a processing chamber can include an RF source, one or more inductive elements conductively coupled to the RF source, and a first inductive element inductively coupled to the one or more inductive elements. The first inductive element can be configured to receive a first portion of RF power transmitted from the RF source through the one or more inductive elements and to deliver the first portion of RF power transmitted from the RF source to a first pedestal electrode of the processing chamber. The power supply circuit can also include a second inductive element inductively coupled to the one or more inductive elements. The second inductive element can be configured to receive a second portion of RF power transmitted from the RF source through the one or more inductive elements and to deliver the second portion of RF power transmitted from the RF source to a second pedestal electrode of the processing chamber.

[0006] In some embodiments, an RF power supply circuit for a multi-electrode cathode of a processing chamber can include an RF source and a first inductive element that can be configured to receive a first portion of RF power transmitted from the RF source and to deliver the first portion of the RF power transmitted from the RF source to a first pedestal electrode of the processing chamber. The power supply circuit can also include a second inductive element that can be configured to receive a second portion of the RF power transmitted from the RF source and to deliver the second portion of the RF power transmitted from the RF source to a second pedestal electrode of the processing chamber. The power supply circuit can also include a capacitive element that can isolate the first inductive element from the second inductive element.

[0007]

[0007] In some embodiments, a method of powering a multi-electrode cathode of a processing chamber may include generating RF power using an RF source, transmitting the RF power through one or more inductive elements conductively coupled to the RF source, inductively coupling a first portion of the RF power from the one or more inductive elements to the first inductive element, supplying the first portion of the RF power from the first inductive element to a first pedestal electrode of the processing chamber, inductively coupling a second portion of the RF power from the one or more inductive elements to a second inductive element, and supplying the second portion of the RF power from the second inductive element to a second pedestal electrode of the processing chamber.

[0008] Any embodiment may include, without limitation, any and / or all of the following features in any combination: The one or more inductive elements may include a third inductive element and a fourth inductive element, where the third inductive element may be inductively coupled to the first inductive element and the fourth inductive element may be inductively coupled to the second inductive element. The power supply circuit may also include a first DC source conductively coupled to the first inductive element and a second DC source conductively coupled to the second inductive element, where the capacitive element may isolate the first DC source from the second DC source. A voltage difference between the first DC source and the second DC source may represent a bipolar chuck voltage that holds the substrate on the pedestal in the processing chamber. The power supply circuit may also include a tuning circuit configured to siphon off a portion of the RF power such that the power supplied to the first pedestal electrode is different from the power supplied to the second pedestal electrode. The tuning circuit may include a parasitic inductor. The tuning circuit may include a parasitic capacitor. The first pedestal electrode may include a wire mesh. A phase difference between the RF source and the second RF source may rotate the energy transferred to the plasma in the processing chamber. The first pedestal electrode, the second pedestal electrode, the third pedestal electrode, and the fourth pedestal electrode may be located in different quadrants of the pedestal of the processing chamber. The first pedestal electrode may include a circular mesh in the center of the pedestal, and the second pedestal electrode may include a ring mesh in the outer periphery of the pedestal. The first inductive element may include an inductive value of approximately 1 μH.

[0009]

[0009] In any embodiment, the power supply circuit may also include a second RF source, one or more second inductive elements conductively coupled to the RF source, and a third inductive element inductively coupled to the second inductive element(s), where the third inductive element may be configured to receive a first portion of RF power transmitted from the second RF source through the second inductive element(s) and supply the first portion of RF power transmitted from the second RF source to the first pedestal electrode of the processing chamber. The power supply circuit may further include a fourth inductive element inductively coupled to the second inductive element(s), where the fourth inductive element may be configured to receive a second portion of RF power transmitted from the second RF source through the second inductive element(s) and supply the second portion of RF power transmitted from the second RF source to the second pedestal electrode of the processing chamber. The third inductive element and the fourth inductive element may have the same inductance. The third inductive element and the fourth inductive element may be configured to block the RF power transmitted from the RF source. The first inductive element and the second inductive element can be configured to block RF power emitted from a second RF source, which can have a frequency of about 13 MHz and which can have a frequency of about 40 MHz.

[0010]

[0010] A further understanding of the nature and advantages of the disclosed technology may be obtained by reference to the remaining portions of the specification and the drawings, wherein like reference numerals are used throughout the several drawings to refer to like components. In some instances, a sublabel is associated with a reference numeral to indicate one of multiple similar components. When referring to a reference numeral without specifying an existing sublabel, it is intended to refer to all of such multiple similar components. [Brief explanation of the drawings]

[0011] [Figure 1] 1 illustrates a cross-sectional view of a processing chamber according to some embodiments. [Figure 2] 1A-1C illustrate configurations for two pedestal electrodes according to some embodiments. [Figure 3]10A-10C illustrate alternative configurations for multiple pedestal electrodes according to some embodiments. [Figure 4] 10A-10C illustrate configurations of pedestal electrodes used to balance RF energy between a central portion of a support assembly and an outer portion of the support assembly in accordance with some embodiments. [Figure 5] FIG. 1 illustrates a power supply circuit configuration that uses inductive coupling to isolate electrical paths between different pedestal electrodes while maintaining an equalized push-pull signal between the two pedestal electrodes, according to some embodiments. [Figure 6] FIG. 1 illustrates a power supply circuit capable of injecting two different RF signals into a pedestal electrode in accordance with some embodiments. [Figure 7] FIG. 10 illustrates a power supply circuit including a tuning circuit for skew- ing the uniformity of the RF signal sent to each pedestal electrode in accordance with some embodiments. [Figure 8] 1A and 1B illustrate concentrically arranged pedestal electrodes of a support assembly with a tuning circuit according to some embodiments. [Figure 9] 1 illustrates a power supply circuit in a four-quadrant implementation according to some embodiments. [Figure 10] 10A-B are a series of diagrams illustrating the effect of a rotating RF field in the four-electrode configuration shown in FIG. 9 according to some embodiments. [Figure 11] FIG. 1 is a flow diagram illustrating a method for powering a multi-electrode cathode of a processing chamber according to some embodiments. DETAILED DESCRIPTION OF THE INVENTION

[0012]

[0022] Described herein are embodiments for controlling plasma across the surface area of ​​a substrate. The present disclosure provides radio frequency (RF) circuits and methods for adjusting the distribution of RF power to multiple meshes embedded in a substrate support or pedestal that also functions as an electrostatic chuck. The methods and systems described herein can be applied regardless of whether the embedded mesh is the source of RF power (e.g., an electrode or electrodes) or the mesh is the destination of RF power (e.g., ground). The embodiments disclosed herein enable modulation of the uniformity of the plasma profile above the substrate. Varying the plasma distribution results in improved uniformity of film parameters on the substrate, including, for example, deposition rate, film stress, refractive index, and other parameters.

[0013]

[0023] 1 is a cross-sectional view of a processing chamber 100 according to some embodiments. As shown, processing chamber 100 may be an etch chamber suitable for etching a substrate 154. Examples of processing chambers that may be adapted to benefit from embodiments described herein may include the Producer® Etch Processing Chamber and the Precision™ Processing Chamber, both commercially available from Applied Materials, Inc., located in Santa Clara, California. It is contemplated that other processing chambers, including those from other manufacturers, may be adapted to benefit from these embodiments.

[0014]

[0024] The processing chamber 100 can be used for a variety of plasma processes. For example, the processing chamber 100 can be used to perform dry etching using one or more etchants. The processing chamber can be used to perform a variety of plasma processes, such as a precursor C x F y (where x and y represent values ​​for known compounds), O, NF, or combinations thereof. In another example, the processing chamber 100 can be used for plasma-enhanced chemical vapor deposition (PECVD) processes using one or more precursors.

[0015]

[0025] The processing chamber 100 may include a chamber body 102, a lid assembly 106, and a support assembly 104. The lid assembly 106 is positioned at an upper end of the chamber body 102. The support assembly 104 may be disposed within the chamber body 102, and the lid assembly 106 may be coupled to the chamber body 102 to enclose the support assembly 104 in a processing region 120. The chamber body 102 may include a transfer port 126, which may include a slit valve formed in a sidewall of the chamber body 102. The transfer port 126 may be selectively opened and closed to allow access to the interior of the processing region 120 by a substrate handling robot (not shown) for substrate transfer.

[0016]

[0026] The electrode 108 may be provided as part of the lid assembly 106. The electrode 108 may also function as a gas distribution plate 112 having a plurality of openings 118 for admitting process gas into the processing region 120. Process gas may be supplied to the processing chamber 100 through a conduit 114, and the process gas may enter a gas mixing region 116 before flowing through the openings 118. The electrode 108 may be coupled to a power source, such as an RF generator, DC power, pulsed DC power, or pulsed RF. An isolator 110 may contact the electrode 108 and electrically and thermally isolate the electrode 108 from the chamber body 102. The isolator 110 may be constructed using a dielectric material, such as aluminum oxide, aluminum nitride, and / or other ceramic or metal oxides. A heater 119 may be coupled to the gas distribution plate 112. The heater 119 may also be coupled to an AC power source.

[0017]

[0027] The support assembly 104 may be coupled to a lift mechanism via a shaft 144 that extends through the bottom of the chamber body 102. The lift mechanism may be flexibly sealed to the chamber body 102 by a bellows that prevents vacuum leakage around the shaft 144. The lift mechanism may allow the support assembly 104 to be moved vertically within the chamber body 102 between a transfer position and multiple process positions to place the substrate 154 in proximity to the electrode 108.

[0018]

[0028] The support assembly 104 may be formed from a metallic or ceramic material. For example, metal oxides, nitrides, or oxide / nitride mixtures, such as aluminum, aluminum oxide, aluminum nitride, aluminum oxide / nitride mixtures, and / or other similar materials may be used. In a typical implementation, the support assembly 104 may include one or more pedestal electrodes. The one or more pedestal electrodes may be configured to supply RF energy to the plasma in the processing region 120. For example, an RF source 160 may be provided outside the chamber body 102 to supply RF energy to the one or more pedestal electrodes of the support assembly 104. The RF energy may be transferred through the one or more pedestal electrodes and through the gas distribution plate 112 (also referred to as a “showerhead”) to the gas in the processing region 120 to be deposited, generating a plasma. The plasma may be maintained above the substrate 154 to deposit a layer of material on the substrate 154. To uniformly deposit material on the substrate 154 , the energy delivered to the plasma should be maintained uniformly across the surface area of ​​the substrate 154 .

[0019]

[0029] A number of technical challenges can make maintaining this uniform plasma difficult. The first involves the size of the substrate 154, which is related to the size of the wavelength of the RF energy applied to the plasma. The RF source 160 may operate at a typical voltage, such as about 13 MHz. If the substrate 154 is about 2.0 m to 2.5 m, the size of the wavelength at 13 MHz may be a significant fraction of the diameter of the substrate 154. Inside the plasma environment, that wavelength may effectively shrink by a factor of two or three. For example, if a quarter wavelength oscillates between minimum and maximum voltages, standing waves may form across the surface of the substrate 154 as energy is transferred to the plasma in the chamber body 102. This can create significant non-uniformities in the plasma and result in non-uniform deposition of material on the substrate 154. This effect is even more pronounced at higher voltages, such as 40 MHz, where the full wavelength may be comparable to the size of the substrate 154. The oscillating waves can result in regions of maximum plasma voltage and regions of zero voltage, resulting in a highly non-uniform process. Therefore, a solution is needed to modulate the RF voltage across multiple pedestal electrodes so that non-uniformities can be averaged out over time when the standing waves generated by the pedestal electrodes rotate or otherwise move over time. As described below, RF signals can be applied to multiple electrodes at multiple points on the support assembly 104, and / or the shape of the standing wave can be modulated by adjusting the phase of different RF signals applied to different electrodes. As the standing wave pattern moves quickly across the plasma, non-uniformities can be averaged out over time, allowing the plasma to maintain a particular crystalline refractive index and remain amorphous.

[0020]

[0030] A second technical challenge involves ensuring that the RF signal supplied to each of the multiple pedestal electrodes is equal. For example, FIG. 1 illustrates the use of a method known as bipolar chucking, which uses a first pedestal electrode 172 and a second pedestal electrode 174. Bipolar chucking involves applying a DC voltage difference between the first pedestal electrode 172 and the second pedestal electrode 174. This electrostatic difference serves to hold the substrate 154 to the support assembly 104. This can be contrasted with monopolar chucking, in which only a single pedestal electrode is used or a DC voltage is applied to only a single pedestal electrode. Monopolar chucking is only effective when energy is applied to the plasma to complete the circuit. Bipolar chucking uses two separate electrical paths from the RF source 160 to each of the first pedestal electrode 172 and the second pedestal electrode 174. In the example of FIG. 1 , a first DC voltage source 162 is applied to a first electrical path of a first pedestal electrode 172. A second DC voltage source 164 is applied to a second electrical path of a second pedestal electrode 174. The first electrical path may include a first capacitor 166 to isolate the DC voltage sources 162, 164 from each other, and the second electrical path may include a second capacitor 168. In some embodiments, each capacitor 166, 168 may be relatively large, such as 50 nF, to block the DC voltage. However, splitting the output of the RF source 160 into two electrical paths may result in different amounts of RF energy being delivered to each pedestal electrode 172, 174. Therefore, a solution is needed to ensure push-pull equalization between the two pedestal electrodes 172, 174 while maintaining isolation.

[0021]

[0031] The first pedestal electrode 172 and the second pedestal electrode 174 may be provided on the support assembly 104. The first pedestal electrode 172 and the second pedestal electrode 174 may be embedded within the support assembly 104 and / or coupled to a surface of the support assembly 104. The first pedestal electrode 172 and the second pedestal electrode 174 may be a plate, a perforated plate, a mesh, a wire screen, or any other distributed conductive arrangement. Although only two pedestal electrodes are illustrated in FIG. 1 , other embodiments may use more than two pedestal electrodes having different geometries and / or arrangements on the support assembly 104, as described in more detail below.

[0022]

[0032] 2 illustrates a configuration of two pedestal electrodes according to some embodiments. In this example, the first pedestal electrode 172 and the second pedestal electrode 174 may divide the support assembly 104 in half, with the pedestal electrodes 172, 174 each positioned to substantially occupy approximately half of the support assembly 104. For example, each pedestal electrode 172, 174 may be shaped like a "D" or semicircle, occupying approximately half of the area of ​​the support assembly 104. A gap may be maintained between the two pedestal electrodes 172, 174 at the center of the support assembly 104, allowing the pedestal electrodes 172, 174 to remain electrically isolated from each other within the support assembly 104.

[0023]

[0033] 2 illustrates each pedestal electrode 172, 174 as a wire mesh formed in a rectangular pattern. For example, the wire mesh may be formed from a material such as molybdenum that has a thermal expansion coefficient similar to that of the material used for the support assembly 104. This allows the support assembly 104 and pedestal electrodes 172, 174 to expand and contract uniformly as heat is applied to the support assembly 104 and substrate 154 during operation of the processing chamber. In some embodiments, the mesh rectangular pattern formed by the pedestal electrodes 172, 174 may include a regular rectangular pattern with a pitch of approximately 1.0 mm and wires that are approximately 0.05 mm thick.

[0024]

[0034] FIG. 3 illustrates an alternative configuration of multiple pedestal electrodes according to some embodiments. In this example, the support assembly 104 may include four pedestal electrodes 302, 304, 306, and 308 arranged in quadrants of the support assembly 104. Each electrode 302, 304, 306, and 308 may be formed using wire mesh, as described above. The wire mesh may be arranged to form a pie-shaped geometry that substantially fills a quadrant of the support assembly 104. Note that the four pedestal electrodes 302, 304, 306, and 308 illustrated in FIG. 3 are provided by way of example only and are not intended to be limiting. In other embodiments, more or fewer pedestal electrodes may be used by dividing the geometry of the support assembly 104 into any number of subdivisions. For example, eight pedestal electrodes may be used by dividing the support assembly 104 into eight octants, and the pedestal electrodes may be formed to substantially fill each of the resulting eight octants.

[0025]

[0035] 4 illustrates a pedestal electrode configuration used to balance RF energy between a central portion of the support assembly 104 and an outer portion of the support assembly 104, according to some embodiments. In this example, the first pedestal electrode 404 may form a first circular shape as a circular mesh that generally occupies the central portion of the support assembly 104. The second pedestal electrode 402 may form a ring around the first pedestal electrode 404, forming a ring mesh that substantially occupies the space remaining between the outer edge of the support assembly 104 and the outer boundary of the first pedestal electrode 404. The second pedestal electrode 402 may form concentric rings around the first pedestal electrode 404. This geometry allows a first RF signal to be applied to the central first pedestal electrode 404 and a second RF signal to be applied to the second pedestal electrode 402. Adjusting the relative phase between these two RF signals can be used to oscillate the shape of the energy generated in the plasma between the central portion of the support assembly 104 and the outer portion of the support assembly 104 .

[0026]

[0036] FIG. 5 illustrates an RF power circuit 570 configuration that uses inductive coupling to isolate electrical paths between different pedestal electrodes while maintaining equalized push-pull signals between the two pedestal electrodes, according to some embodiments. The RF power circuit 570 may include an RF source 502. The RF source may operate at a variety of frequencies, from a low-end of 350 kHz to frequencies in the very high frequency (VHF) range. For example, in some embodiments, frequencies such as 13.56 MHz, 27.12 MHz, or 40.68 MHz may be used. The RF source 502 may deliver RF power and generate an RF signal, described as emanating from the RF source 502. The RF source 502 may be coupled in series with one or more inductive elements. For example, FIG. 5 illustrates an inductive element 504 and another inductive element 506. In some embodiments, the values ​​of the inductive elements 504, 506 are approximately equal, such as about 1 μH, and may range from about 0.1 μH to about 10 μH. RF source 502, inductive element 504, and inductive element 506 may form a continuous circuit path that may be referred to as a "first" circuit path in power supply circuit 570. The one or more inductive elements may include two discrete inductive elements, such as inductive element 504 and inductive element 506. Also, the one or more inductive elements may include more or less than two inductive elements. Also, the one or more inductive elements may be conductively coupled to RF source 502 through a conductive or wired path, as shown in FIG. 5, which may be contrasted with traditional inductive coupling.

[0027]

[0037] The power supply circuit 570 may also include a second circuit path that may be conductively isolated from the first circuit path. Instead of having a direct conductive path, the second circuit path may be inductively coupled to the first circuit path. For example, the second circuit path may include an inductive element 508 and another inductive element 510. These inductive elements 508, 510 may be inductively coupled to the inductive elements 504, 506 such that an RF signal provided by the RF source 502 is transferred from the inductive elements 504, 506 to the inductive elements 508, 510. In some embodiments, the inductive elements 504 and 508 may be interleaved in a toroidal configuration to maximize the inductive coupling between the inductive elements 504, 508. The inductive elements 506 and 510 may be arranged in a similar manner.

[0028]

[0038] Inductive element 508 and inductive element 510 may be separated by capacitive element 512. Capacitive element 512 may be implemented using a capacitor having a relatively large capacitance value, such as approximately 50 nF or greater. The capacitance value of capacitive element 512 may be relatively large so as to provide a low impedance to the RF signal from RF source 502 and be large enough to block any DC signals that would otherwise pass between inductive element 508 and inductive element 510. Note that when inductive element 504 and inductive element 506 are referred to as "one or more inductive elements," inductive element 508 and inductive element 510 may be referred to as first and second inductive elements, respectively.

[0029]

[0039] Power supply circuit 570 may also include first DC voltage source 162 and second DC voltage source 164. First DC voltage source 162 may be conductively coupled to inductive element 508, and second DC voltage source 164 may be conductively coupled to element 510. First DC voltage source 162 and second DC voltage source 164 may be configured such that a voltage difference may be established between first DC voltage source 162 and second DC voltage source 164. Capacitive element 512 may isolate DC signals from first DC voltage source 162 from DC signals from second DC voltage source 164 in RF power supply circuit 570. A voltage difference between these DC voltage sources 162 and 164 may be established across capacitive element 512.

[0030]

[0040] The output of the inductive element 508, which is conductively coupled to the first DC voltage source 162, may be coupled to the first pedestal electrode 172. Similarly, the output of the inductive element 510, which is conductively coupled to the second DC voltage source 164, may be conductively coupled to the second pedestal electrode 174. These RF signals may pass through two rods that provide an electrical path to the pedestal electrodes 172, 174. This arrangement enables the voltage difference between the first DC voltage source 162 and the second DC voltage source 164 to use bipolar chucking to hold the substrate 154 on the support assembly 104. Thus, the inductive element 508 may be considered a “first” inductive element that is inductively coupled to one or more inductive elements (e.g., the inductive elements 508, 510), receives a first portion of RF power transmitted from the RF source through the one or more inductive elements, and is configured to deliver the first portion of RF power transmitted from the RF source to the first pedestal electrode 172 of the processing chamber 120. Similarly, inductive element 510 can be considered a “second” inductive element that is inductively coupled to one or more inductive elements (e.g., inductive elements 508, 510), receives a second portion of the RF power transmitted from the RF source through the one or more inductive elements, and is configured to supply the second portion of the RF power transmitted from the RF source to the second pedestal electrode 174 of the processing chamber 120.

[0031]

[0041] The capacitive element 512 may function as a blocking capacitor to provide DC isolation between the two pedestal electrodes 172, 174, thereby enabling bipolar chucking and allowing RF to pass through the capacitive element 512. This arrangement also establishes a push-pull relationship between the RF signal coupled to the first pedestal electrode 172 and the RF signal coupled to the second pedestal electrode 174, resulting in the same signal at each pedestal electrode 172, 174. When an RF signal is supplied to the support assembly 104 by the pedestal electrodes 172, 174 in a push-pull relationship, the two electrode positions may each be approximately 180 degrees out of phase.

[0032]

[0042] In one implementation, the second pedestal electrode 174 may have a larger surface area than the first pedestal electrode 172. In one implementation, the second pedestal electrode 174 may have a larger diameter than the first pedestal electrode 172. The second pedestal electrode 174 may surround the first pedestal electrode 172. In one implementation, the first pedestal electrode 172 may function as a chuck electrode while functioning as a first RF electrode. The second pedestal electrode 174 may be a second RF electrode that regulates the plasma together with the first pedestal electrode 172. The first pedestal electrode 172 and the second pedestal electrode 174 may be powered at the same frequency or at different frequencies. The RF power to one or both of the first pedestal electrode 172 and the second pedestal electrode 174 can be varied to regulate the plasma. For example, a sensor (not shown) may be used to monitor RF energy from one or both of the first pedestal electrode 172 and the second pedestal electrode 174. Data from the sensor device may be transmitted and utilized to vary the power applied to the RF source of the first pedestal electrode 172 and / or the RF source 502 of the second pedestal electrode 174.

[0033]

[0043] As used herein, the terms first, second, third, fourth, fifth, etc. are used simply to distinguish between different instances of similar circuit elements. For example, a "first" inductive element 508 may be distinguished from a "second" inductive element 510. This does not imply any ordering, priority, importance, or any other substantial characteristic of these elements, but is used only to distinguish one element from another. Note also that this allows the first / second labels to be used to distinguish between any two elements. Thus, these labels are relative, not absolute.

[0034]

[0044] FIG. 6 illustrates a power supply circuit 670 that can inject two different RF signals into the pedestal electrode according to some embodiments. In this example, a second RF source 602 can be added to the power supply circuit 670. In some embodiments, a 13.56 MHz frequency can be used for the RF source 502 and a 40.68 MHz signal can be used for the second RF source 602. The frequency of the second RF source 602 can be different from the frequency of the RF source 502. The second RF source 602 can form a third circuit path including inductive elements 604, 606 arranged as described above for the first circuit path of the RF source 502. The third circuit path can be inductively coupled to the second circuit path using inductive elements 608, 610 separated by a capacitive element 612. The capacitive element 612 can be similar to the capacitive element 512 and have a relatively large capacitance, such as about 50 nF or greater, to keep the first DC voltage source 162 isolated from the second DC voltage source 164. In some cases, the values ​​of the inductive elements 604, 606, 608, 610 between the first and third circuit paths may be different than the values ​​used for the inductive elements 504, 506, 508, 510 between the first and second circuit paths. For example, the inductive elements 604, 606, 608, 610 may be configured with an inductance value that blocks the RF signal from the RF source 502 while passing the RF signal from the second RF source 602. Similarly, the inductive elements 504, 506, 508, 510 may be configured with an inductance value that passes the RF signal from the RF source 502 while blocking the RF signal from the second RF source 602.

[0035]

[0045] This arrangement allows two different frequencies to be injected simultaneously into the pedestal electrodes 172, 174. Note that the use of two pedestal electrodes 172, 174 is provided for illustrative purposes only and is not meant to be limiting. In other embodiments, any number of pedestal electrodes can be used by replicating the circuit elements shown in FIG. 6. Similarly, the use of two different frequencies is provided for illustrative purposes only and is not meant to be limiting. In other embodiments, any number of different frequencies can be injected into the pedestal electrodes by replicating the circuit path shown in FIG. 6 using RF sources having different frequencies and corresponding inductance values.

[0036]

[0046] FIG. 7 illustrates a power supply circuit 770 including a tuning circuit for skewing the uniformity of the RF signal delivered to each pedestal electrode 172, 174 according to some embodiments. The power supply circuit 770 of FIG. 7 is similar to the RF power supply circuit 570 of FIG. 5, except that a tuning circuit has been added to the input of the first pedestal electrode 172. The tuning circuit may include a parasitic inductor 702 and / or a parasitic capacitor 704 to siphon current from the RF signal before it is delivered to the first pedestal electrode 172. This results in an asymmetric RF signal delivered by the first pedestal electrode 172 and the second pedestal electrode 174. This can be used to compensate for irregularities in the processing chamber. While an ideal processing chamber can benefit from a purely symmetric RF output, many processing chambers (especially small chambers) may experience inherent anomalies in the plasma based on the electrical and / or physical characteristics of the processing chamber. The tuning circuit can be used to adjust the output of one side of the power supply circuit 772 to compensate for the anomalies in the processing chamber. For example, adjusting the RF power of the first pedestal electrode 172 using the parasitic capacitor 704 and / or the parasitic inductor 702 can be used to skew the RF waveform generated in the plasma from one side to the other.

[0037]

[0047] FIG. 8 illustrates concentrically arranged pedestal electrodes 802, 804 on a support assembly 104 with a tuning circuit according to some embodiments. The power supply circuit 770 in FIG. 8 may be the same as the power supply circuit 770 in FIG. 7. However, the first pedestal electrode 802 may form a circular wire mesh in the center of the support assembly 104, and the second pedestal electrode 804 may form concentric rings around the periphery of the support assembly 104. For example, the first pedestal electrode 802 and the second pedestal electrode 804 may be arranged as shown in FIG. 4. The tuning circuit, as described above, can be used to compensate for process chamber anomalies by skewing the RF waveform generated in the plasma relative to center-to-edge non-uniformities caused by the process chamber.

[0038]

[0048] 9 illustrates a power supply circuit 970 for a four-quadrant implementation according to some embodiments. The first pedestal electrode 910 and the second pedestal electrode 916 may occupy opposing quadrants of the support assembly 104, as shown in FIG. 4. Similarly, the third pedestal electrode 912 and the fourth pedestal electrode 914 may also occupy opposing quadrants. The circuitry of the power supply circuit 970 that drives the first / second pedestal electrodes 910, 916 (e.g., RF source 502, inductive elements 504, 506, 508, 510, capacitive element 512, etc.) can be replicated to individually power the third / fourth pedestal electrodes 912, 914 (e.g., RF source 902, inductive elements 904, 906, 908, 910, capacitive element 913, tuning circuit capacitor 915, and tuning inductor 999).

[0039]

[0049] This configuration creates a rotating push-pull circuit that rotates the oscillating field in a circular fashion around the plasma. In some embodiments, the frequency difference between RF source 502 and RF source 902 can control the speed at which the field rotates in the plasma. For example, the frequency difference can be from about 1 kHz to about 100 kHz. With a 1 kHz difference, rotation around the plasma can take about 1 millisecond, and with a 100 kHz difference, rotation around the plasma can take about 10 microseconds. Generally, a rotation speed within this range is desirable so that the movement of the field in the plasma is sufficient to average out any instantaneous non-uniformities over time. In some embodiments, the frequency difference can be kept above 5 kHz to avoid issues with reflected power fluctuations that can make it difficult for RF source 502 to generate stable power.

[0040]

[0050] FIG. 10 is a series of diagrams illustrating the effect of a rotating RF field on the four-electrode configuration shown in FIG. 9 according to some embodiments. In this example, the mesh can be subdivided into four paired quadrants on the support assembly 104. When operating in a push-pull drive configuration, standing waves can both oscillate and rotate around the plasma. When the push-pull pairs operate at slightly different frequencies, the overall push-pull across the diameter of the plasma can smoothly rotate at a rate equal to the frequency difference, alternating between different mesh combinations. Tuning elements can be added as shown in FIG. 9, or a push-pull phase difference offset from 180 degrees can be introduced to add a center-to-edge component that also rotates.

[0041]

[0051] 11 is a flow diagram 1100 illustrating a method for powering a multi-electrode cathode of a processing chamber according to some embodiments. The method may include generating 1102 RF power using an RF source. The RF source may use any of the frequencies described above and may be integrated into a power supply circuit, as illustrated by RF source 502 in FIGS. 5-9 above.

[0042]

[0052] The method may also include transmitting 1104 RF power through one or more inductive elements conductively coupled to the RF source. The one or more inductive elements may include one or more inductors, such as inductive elements 504, 506 shown in Figures 5-9 above. Note that a single inductive element may be used, or two or more inductive elements may be used in different embodiments.

[0043]

[0053] The method may additionally include inductively coupling 1106 a first portion of RF power from one or more inductive elements to a first inductive element. For example, the first portion of RF power may be the portion of RF power from RF source 502 that is inductively coupled from inductive element 504 to inductive element 508 in FIGS. 5-9 above.

[0044]

[0054] The method may further include supplying 1108 a first portion of RF power from a first inductive element to a first pedestal electrode of the processing chamber. For example, this first portion of RF power may be supplied from inductive element 508 to first pedestal electrode 172, as shown in Figures 5-9 above.

[0045]

[0055] The method may also include inductively coupling 1110 a second portion of RF power from one or more inductive elements to a second inductive element. For example, the second portion of RF power may be the portion of RF power from RF source 502 that is inductively coupled from inductive element 506 to inductive element 510 in FIGS. 5-9 above.

[0046]

[0056] The method may additionally include supplying 1112 a second portion of the RF power from a second inductive element to a second pedestal electrode of the processing chamber. For example, this second portion of the RF power may be supplied from inductive element 510 to second pedestal electrode 174, as shown in Figures 5-9 above.

[0047]

[0057] It should be understood that the specific steps illustrated in FIG. 11 provide a particular method for powering a multi-electrode cathode of a processing chamber according to various embodiments. Other sequences of steps may be performed by alternative embodiments. For example, alternative embodiments may perform the steps outlined above in a different order. Furthermore, individual steps illustrated in FIG. 11 may include multiple sub-steps that may be performed in various orders as appropriate for the individual step. Furthermore, additional steps may be added or removed depending on the particular application. Many variations, modifications, and alternatives are also within the scope of the present disclosure.

[0048]

[0058] The term "about" throughout this disclosure may be used to describe values ​​that occur within a range of -15% to +15% of the stated value. For example, a capacitance of about 100 nF may fall within a range of 85 nF to 115 nF.

[0049]

[0059] In the above description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments. However, it will be apparent to one skilled in the art that some embodiments may be practiced without some of these specific details. In other instances, well-known structures and devices are shown in block diagram form.

[0050]

[0060] The foregoing description provides exemplary embodiments only and is not intended to limit the scope, applicability, or configuration of the present disclosure. Rather, the foregoing description of various embodiments provides one of ordinary skill in the art with an enabling disclosure for implementing at least one embodiment. It should be understood that various changes can be made in the function and arrangement of elements without departing from the spirit and scope of the several embodiments as set forth in the appended claims.

[0051]

[0061] In the foregoing description, specific details are provided to provide a thorough understanding of the embodiments. However, those skilled in the art will understand that the embodiments may be practiced without these specific details. For example, circuits, systems, networks, processes, and other components may be shown as components in block diagram form so as not to obscure the embodiments in unnecessary detail. In other instances, well-known circuits, processes, algorithms, structures, and techniques may be shown without unnecessary detail so as not to obscure the embodiments.

[0052]

[0062] It should also be noted that the particular embodiments may be described as a process that is illustrated as a flowchart, a flow diagram, a data flow diagram, a structure diagram, or a block diagram. While a flowchart may depict steps as a sequential process, many of the steps may be performed in parallel or simultaneously. Moreover, the order of steps may be rearranged. A process ends when the step is completed, but may have additional steps not included in the diagram. A process may correspond to a method, a function, a procedure, a subroutine, a subprogram, etc. When a process corresponds to a function, its termination may correspond to a return of the function to the calling function or the main function.

[0053]

[0063] In the foregoing specification, features have been described with reference to specific embodiments thereof, but it should be recognized that all embodiments are not limited thereto. Various features and aspects of the several embodiments may be used individually or jointly. Moreover, the embodiments may be utilized in any number of environments and applications beyond those described herein without departing from the broader spirit and scope of the specification. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims

1. 1. A radio frequency (RF) power supply circuit for a multi-electrode cathode of a processing chamber, comprising: an RF source; and one or more inductive elements conductively coupled to the RF source; a first inductive element inductively coupled to the one or more inductive elements, the first inductive element configured to receive a first portion of RF power transmitted from the RF source through the one or more inductive elements and to deliver the first portion of RF power transmitted from the RF source to a first pedestal electrode of the processing chamber; a second inductive element inductively coupled to the one or more inductive elements, the second inductive element configured to receive a second portion of the RF power transmitted from the RF source through the one or more inductive elements and to deliver the second portion of the RF power transmitted from the RF source to a second pedestal electrode of the processing chamber; a capacitive element isolating the first inductive element from the second inductive element; An RF power supply circuit comprising:

2. 2. The RF power circuit of claim 1, wherein the one or more inductive elements include a third inductive element and a fourth inductive element, the third inductive element being inductively coupled to the first inductive element, and the fourth inductive element being inductively coupled to the second inductive element.

3. A radio frequency (RF) power supply circuit for a multi-electrode cathode of a processing chamber, comprising: an RF source; and one or more inductive elements conductively coupled to the RF source; a first inductive element inductively coupled to the one or more inductive elements, the first inductive element configured to receive a first portion of RF power transmitted from the RF source through the one or more inductive elements and to deliver the first portion of RF power transmitted from the RF source to a first pedestal electrode of the processing chamber; a second inductive element inductively coupled to the one or more inductive elements, the second inductive element configured to receive a second portion of the RF power transmitted from the RF source through the one or more inductive elements and to deliver the second portion of the RF power transmitted from the RF source to a second pedestal electrode of the processing chamber; a second RF source; and a second one or more inductive elements conductively coupled to the RF source; a third inductive element inductively coupled to the second one or more inductive elements, the third inductive element configured to receive a first portion of RF power transmitted from the second RF source through the second one or more inductive elements and to deliver the first portion of RF power transmitted from the second RF source to a first pedestal electrode of the processing chamber; a fourth inductive element inductively coupled to the second one or more inductive elements, the fourth inductive element configured to receive a second portion of RF power transmitted from the second RF source through the second one or more inductive elements and to deliver the second portion of RF power transmitted from the second RF source to a second pedestal electrode of the processing chamber; An RF power supply circuit comprising:

4. 4. The RF power circuit of claim 3, wherein the third inductive element and the fourth inductive element have the same inductance.

5. The RF power supply circuit of claim 3 , wherein the third inductive element and the fourth inductive element are configured to block RF power emitted from the RF source.

6. The RF power circuit of claim 5 , wherein the first inductive element and the second inductive element are configured to block RF power emitted from the second RF source.

7. 4. The RF power circuit of claim 3, wherein the RF source has a frequency of about 13 MHz and the second RF source has a frequency of about 40 MHz.

8. 1. An RF power supply circuit for a multi-electrode cathode of a processing chamber, comprising: an RF source; and a first inductive element configured to receive a first portion of RF power transmitted from the RF source and to deliver the first portion of RF power transmitted from the RF source to a first pedestal electrode of the processing chamber; a second inductive element configured to receive a second portion of the RF power transmitted from the RF source and to deliver the second portion of the RF power transmitted from the RF source to a second pedestal electrode of the processing chamber; a capacitive element isolating the first inductive element from the second inductive element; An RF power supply circuit comprising:

9. a first DC source conductively coupled to the first inductive element; a second DC source conductively coupled to the second inductive element; and 9. The RF power circuit of claim 8, further comprising: a capacitive element isolating the first DC source from the second DC source.

10. 10. The RF power circuit of claim 9, wherein an electrostatic force due to a voltage difference between the first DC source and the second DC source holds a substrate to a pedestal in the processing chamber.

11. a tuning circuit configured to siphon off a portion of the RF power such that the power supplied to the first pedestal electrode is different from the power supplied to the second pedestal electrode; The RF power circuit of claim 8 further comprising:

12. The RF power circuit of claim 11 , wherein the tuning circuit includes a parasitic inductor.

13. The RF power circuit of claim 11 , wherein the tuning circuit includes a parasitic capacitor.

14. The RF power circuit of claim 8 , wherein the first pedestal electrode comprises a wire mesh.

15. 1. A method of powering a multi-electrode cathode in a processing chamber, comprising: generating RF power with an RF source; transmitting RF power through one or more inductive elements conductively coupled to the RF source; inductively coupling a first portion of the RF power from the one or more inductive elements to a first inductive element; delivering a first portion of the RF power from the first inductive element to a first pedestal electrode of the processing chamber; inductively coupling a second portion of the RF power from the one or more inductive elements to a second inductive element; delivering a second portion of the RF power from the second inductive element to a second pedestal electrode of the processing chamber; isolating the first inductive element from the second inductive element with a capacitive element; A method comprising:

16. A method of powering a multi-electrode cathode in a processing chamber, comprising: generating RF power with an RF source; transmitting RF power through one or more inductive elements conductively coupled to the RF source; inductively coupling a first portion of the RF power from the one or more inductive elements to a first inductive element; delivering a first portion of the RF power from the first inductive element to a first pedestal electrode of the processing chamber; inductively coupling a second portion of the RF power from the one or more inductive elements to a second inductive element; delivering a second portion of the RF power from the second inductive element to a second pedestal electrode of the processing chamber; generating a second RF power using a second RF source; transmitting the second RF power through a second one or more inductive elements conductively coupled to the second RF source; inductively coupling a first portion of the second RF power from the second one or more inductive elements to a third inductive element; delivering a first portion of the RF power from the third inductive element to a third pedestal electrode of the processing chamber; inductively coupling a second portion of the second RF power from the second one or more inductive elements to a fourth inductive element; supplying a second portion of the second RF power from the fourth inductive element to a fourth pedestal electrode of the processing chamber; A method comprising:

17. 17. The method of claim 16, wherein a phase difference between an RF source and the second RF source rotates the energy transferred to the plasma in the processing chamber.

18. 17. The method of claim 16, wherein the first pedestal electrode, the second pedestal electrode, the third pedestal electrode, and the fourth pedestal electrode are each located in a different quadrant of a pedestal of the processing chamber.

19. 16. The method of claim 15, wherein the first pedestal electrode comprises a circular mesh at a center of the pedestal and the second pedestal electrode comprises a ring mesh at a periphery of the pedestal.

20. 16. The method of claim 15, wherein the first inductive element comprises an inductive value of about 1 μH.

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