Plasma processing apparatus, annular consumable part, and method for manufacturing annular consumable part

Abstract

To repair a worn component.SOLUTION: A plasma processing apparatus includes a plasma processing vessel, and a component disposed within the plasma processing vessel, the component is repaired by carrying out a first step of measuring a wear amount of the component after plasma processing, a second step of comparing the wear amount of the component with a threshold value, and, a third step of irradiating an energy beam to the raw material of the component while supplying the raw material to the component when the wear amount of the component exceeds a threshold value in the second step.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus , Annular wasting parts and a method for manufacturing annular consumable parts Regarding. [Background technology]

[0002] In response to the demand for high aspect ratio etching and miniaturization, plasma processes that apply high-power radio frequency power for generating bias voltages are becoming more common, which increases the attraction of ions onto the substrate and realizes high aspect ratio etching and miniaturization (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2015-43470 Summary of the Invention [Problem to be solved by the invention]

[0004] However, this process increases the wear rate of silicon, quartz, silicon carbide parts and parts sprayed with these materials, shortening the lifespan of these parts. Furthermore, these parts must be replaced after a certain amount of wear. This increases the lead time for manufacturing consumable products.

[0005] In response to the above problem, one aspect of the present invention aims to repair consumable parts. [Means for solving the problem]

[0006] In order to solve the above problems, according to one aspect, there is provided a plasma processing chamber, a plasma processing chamber, and a Circular wear a component, Circular wear Parts are a reforming section made of the same material as the material constituting the annular consumable part; A plasma processing apparatus is provided. [Effects of the Invention]

[0007] According to one aspect, consumable parts can be repaired. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment. [Figure 2] FIG. 1 is a diagram showing an example of the configuration of a 3D printer according to an embodiment. [Figure 3] FIG. 1 is a diagram showing an example of the configuration of a three-dimensional scanner according to an embodiment. [Figure 4] 10 is a flowchart showing an example of a three-dimensional data generation process according to an embodiment. [Figure 5] 10 is a flowchart illustrating an example of a part repair and formation process according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0010] [Plasma processing equipment] First, an example of a plasma processing apparatus 1 will be described with reference to FIG. 1. The plasma processing apparatus 1 according to this embodiment is a parallel plate plasma processing apparatus of a capacitively coupled plasma (CCP) type. The plasma processing apparatus 1 has a plasma generating means for generating plasma for etching a wafer W. The plasma processing apparatus 1 has components disposed inside a processing chamber 10, and is an example of a substrate processing system for processing substrates. The components are formed by a process of irradiating an energy beam onto a raw material for the components while supplying the raw material according to the surface condition of the components.

[0011] The plasma processing apparatus 1 has a substantially cylindrical processing chamber 10. The inner surface of the processing chamber 10 is subjected to an alumite treatment (anodization treatment). Inside the processing chamber 10, plasma processing such as etching and film formation is performed on the wafer W using plasma.

[0012] The mounting table 20 has a base 22 and an electrostatic chuck 21. The wafer W is placed on the upper surface of the electrostatic chuck 21. The base 22 is made of, for example, Al, Ti, SiC, or the like.

[0013] An electrostatic chuck 21 is provided on a base 22. The electrostatic chuck 21 has a structure in which an electrode film 21a is sandwiched between insulators 21b. A DC power supply 25 is connected to the electrode film 21a via a switch 23. When the switch 23 is on, a DC voltage is applied from the DC power supply 25 to the electrode film 21a, and the wafer W is electrostatically attracted to the electrostatic chuck 21 by Coulomb force.

[0014] An annular edge ring 87 is placed around the periphery of the wafer W to surround the wafer W. The edge ring 87 is made of, for example, Si, and focuses plasma in the processing chamber 10 toward the surface of the wafer W, thereby improving the efficiency of the plasma processing.

[0015] The mounting table 20 is supported on the bottom of the processing vessel 10 by a support 14. A flow path 24 for passing a coolant is formed inside the base 22. A coolant such as cooling water or brine output from a chiller circulates through a coolant inlet pipe 24a → flow path 24 → coolant outlet pipe 24b → chiller. The circulating coolant removes heat from the mounting table 20 and cools it. The coolant may be a fluid or a gas.

[0016] A heat transfer gas such as helium gas (He) or argon gas (Ar) supplied from a heat transfer gas supply source is supplied through a gas supply line 28 between the upper surface of the electrostatic chuck 21 and the back surface of the wafer W. With this configuration, the wafer W is controlled to a predetermined temperature by the refrigerant circulating through the flow path 24 and the heat transfer gas supplied to the back surface of the wafer W.

[0017] The first high-frequency power supply 32 is connected to the mounting table 20 via a first matching box 33 and applies high-frequency power HF (e.g., 40 MHz) for plasma generation at a first frequency to the mounting table 20. The second high-frequency power supply 34 is connected to the mounting table 20 via a second matching box 35 and applies high-frequency power LF (e.g., 13.56 MHz) for bias voltage generation at a second frequency lower than the first frequency to the mounting table 20. In this manner, the mounting table 20 also functions as a lower electrode. Note that although the high-frequency power HF for plasma generation is applied to the mounting table 20 in this embodiment, it may also be applied to the showerhead 40.

[0018] The first matching box 33 matches the output impedance of the first high frequency power supply 32 with the load impedance on the plasma side. The second matching box 35 matches the internal impedance of the second high frequency power supply 34 with the load impedance on the plasma side.

[0019] The showerhead 40 is attached to the ceiling of the processing chamber 10 and closes the ceiling via a cylindrical shield ring 42 attached to its outer periphery. The showerhead 40 may be made of silicon. The showerhead 40 also functions as a counter electrode (upper electrode) facing the mounting table 20 (lower electrode). A top shield ring 41 made of quartz (SiO2) or the like is disposed around the showerhead 40 on the underside of the shield ring 42.

[0020] An annular cover ring 89 and an insulator ring 86 are disposed on the side surface of the mounting table 20 and around the edge ring 87. The cover ring 89 and the insulator ring 86 may be made of quartz.

[0021] A gas inlet 45 is formed in the shower head 40. A diffusion chamber 46 is provided inside the shower head 40. Gas output from the gas supply source 15 is supplied to the diffusion chamber 46 through the gas inlet 45, diffused, and supplied to the plasma processing space U in the processing vessel 10 through a large number of gas supply holes 47.

[0022] An exhaust port 55 is formed on the bottom surface of the processing vessel 10. The inside of the processing vessel 10 is evacuated and depressurized by an exhaust device 50 connected to the exhaust port 55. This allows the inside of the processing vessel 10 to be maintained at a predetermined vacuum level. A gate valve G is provided on the side wall of the processing vessel 10. The gate valve G opens and closes when a wafer W is loaded into and loaded out of the processing vessel 10.

[0023] An annular baffle plate 81 is attached to the upper part of the exhaust path 49 formed above the exhaust port 55, separating the plasma processing space U from the exhaust space D and rectifying the gas flow.

[0024] The plasma processing apparatus 1 is provided with a first control unit 60 that controls the overall operation of the apparatus. The first control unit 60 has a CPU (Central Processing Unit) 62, a ROM (Read Only Memory) 64, and a RAM (Random Access Memory) 66. The CPU 62 performs plasma processing such as etching according to a recipe stored in a storage area such as the RAM 66. The recipe contains control information for the apparatus relative to process conditions, such as process time, pressure (gas exhaust), high-frequency power and voltage, various gas flow rates, temperatures inside the processing chamber (upper electrode temperature, sidewall temperature of the processing chamber, wafer W temperature, electrostatic chuck temperature, etc.), and coolant temperature. These programs and recipes indicating the processing conditions may be stored on a hard disk or semiconductor memory. Alternatively, the recipe may be stored in a portable, computer-readable recording medium such as a CD-ROM or DVD, set at a predetermined location, and read out.

[0025] In the plasma processing apparatus 1 configured as above, when plasma processing is performed, the opening and closing of the gate valve G is controlled, the wafer W is loaded into the processing chamber 10, and the lifter pins are raised and lowered to place the wafer W on the mounting table 20. A DC voltage is applied from the DC power supply 25 to the electrode film 21a, and the wafer W is electrostatically attracted to and held by the electrostatic chuck 21.

[0026] The plasma generating means includes a gas supply source 15, a first high-frequency power supply 32, and a second high-frequency power supply 34. The gas supply source 15 outputs a processing gas and supplies it into the processing chamber 10. The first high-frequency power supply 32 applies a first high-frequency power to the mounting table 20. The second high-frequency power supply 34 applies a second high-frequency power to the mounting table 20. This causes the plasma generating means to generate plasma in the plasma processing space U. The generated plasma acts to subject the wafer W to plasma processing.

[0027] After the plasma processing, a DC voltage having a polarity opposite to that applied when the wafer W was attracted is applied from the DC power supply 25 to the electrode film 21a, thereby removing the charge on the wafer W. The processed wafer W is peeled off from the electrostatic chuck 21 by raising and lowering the lifter pins, and is unloaded from the processing chamber 10 when the gate valve G is opened.

[0028] [3D printer configuration] Next, an example of the configuration of the 3D printer 100 will be described with reference to FIG. 2. FIG. 2 shows an example of the configuration of the 3D printer 100 according to one embodiment. The 3D printer 100 according to this embodiment is an example of an apparatus that is disposed in a processing chamber 10 and repairs parts (consumable parts) that are worn by plasma. However, the apparatus for repairing consumable parts is not limited to the configuration of the 3D printer 100 shown in FIG. 2.

[0029] In addition, in this embodiment, the edge ring 87 will be described as an example of a consumable part that can be repaired by the 3D printer 100. However, the consumable part is not limited to this, and may be, for example, a cover ring 89, an insulator ring 86, or a top shield ring 41. The consumable part may be any part that is arranged in the plasma processing apparatus 1 and that can be removed from the plasma processing apparatus 1.

[0030] The 3D printer 100 is capable of forming a three-dimensional object in the chamber 110. In this embodiment, the worn portion of the edge ring 87 is measured in advance, and based on the measurement results, the three-dimensional shape of the worn portion of the edge ring 87 is repaired using the 3D printer 100, and the edge ring 87 is reformed.

[0031] During repair, the edge ring 87 is placed on a mounting surface of a stage 102 provided on a table 103. The stage 102 is movable up and down, for example, so as to gradually lower the stage 102 as the repair of the edge ring 87 progresses.

[0032] In this embodiment, the raw material storage unit 107 stores SiC powder as the raw material. The raw material may be the same as the material forming the edge ring 87. For example, the edge ring 87 may be formed of quartz, Si, or tungsten. In this case, the raw material storage unit 107 stores powder of quartz, Si, or tungsten. The raw material is not limited to being in powder form, but may also be in wire form. SiC powder B shown in FIG. 2 is supplied from the raw material storage unit 107 and sprayed into the chamber 110 from the raw material supply head 105 to be used to repair worn edge ring 87. The raw material storage unit 107 and the raw material supply head 105 are preferably disposed outside the chamber 110.

[0033] An energy beam is irradiated into the chamber 110 while supplying SiC powder B, thereby melting the SiC powder B. In this embodiment, a laser beam A (optical laser) is used as the energy beam to be irradiated. The laser beam A is output from a light source 106 and irradiated onto a predetermined position positioned by a laser scanning device 104 that performs two-dimensional scanning. The light source 106 and the laser scanning device 104 are preferably disposed outside the chamber 110.

[0034] The laser scanning device 104 scans the stage 102 with laser light A in at least two dimensions (X and Y directions). For example, the laser scanning device 104 is controlled to move the irradiation spot of the laser light A on the stage 102 depending on the wear state of the edge ring 87 (wear amount, wear position (wear area), wear shape, etc.). Specifically, under the control of the second control unit 150, the laser scanning device 104 scans in two dimensions (X and Y directions) depending on the progress of repair of the edge ring 87. For example, in the example of FIG. 2, the wear state of the edge ring 87 is indicated by dotted line E. The 3D printer repairs this wear of the edge ring 87 to its original, brand new state (i.e., the state indicated by dotted line E).

[0035] At this time, laser light A scanned in two dimensions by laser scanning device 104 is irradiated onto an irradiation area on stage 102 through a laser transmission window 111 provided in the ceiling of chamber 110, for example, directly above the center of stage 102. Laser light A heats SiC powder B above edge ring 87 (see C in FIG. 2), melting and solidifying powder B to form solidified layer D. The solidified layer D is deposited on the upper surface of edge ring 87, thereby repairing and reforming edge ring 87.

[0036] The laser scanning device 104 and the raw material supply head 105 are moved to predetermined positions by the second control unit 150 driving the drive unit 108. The chamber 110 may be provided with a mechanism capable of supplying an inert gas and evacuating the chamber 110.

[0037] The second control unit 150 has a CPU 152, a ROM 154, and a RAM 156. The second control unit 150 controls the supply of raw material powder from the raw material storage unit 107 and the raw material supply head 105, and controls the elevation of the stage 102. The second control unit 150 also controls the lighting of the light source 106, the scanning of the laser scanning device 104, and the driving unit 108. In this way, the second control unit 150 controls the repair operation of the edge ring 87.

[0038] The control program executed by the CPU 152 is stored, for example, in the ROM 154. The CPU 152 controls the repair of the edge ring 87 by executing the control program based on three-dimensional data stored, for example, in the RAM 156. The control program may be stored in a fixed recording medium, or may be stored in a removable, computer-readable recording medium such as various flash memories or optical (magnetic) disks.

[0039] Furthermore, the second control unit 150 has a display 158 and an input device 160 such as a keyboard or a pointing device. The display 158 is used to display the progress of repair of the edge ring 87. The input device 160 is used to issue commands such as starting and stopping the repair operation of the edge ring 87 and to input control parameters during setup.

[0040] The wear state of the edge ring 87 is measured by a non-contact three-dimensional scanner 200 (hereinafter simply referred to as the "three-dimensional scanner 200"). That is, the wear state of the edge ring 87 is measured by the three-dimensional scanner 200, and the measurement information is transmitted to the second control unit 150. The second control unit 150 stores the measurement information in the RAM 156 as three-dimensional data.

[0041] Next, a process of measuring the wear state of the edge ring 87, which is performed by the three-dimensional scanner 200 before the above process is performed, will be described.

[0042] [3D scanner configuration] First, an example of the configuration of the three-dimensional scanner 200 will be described with reference to Fig. 3. Fig. 3 shows an example of the configuration of the three-dimensional scanner 200 according to one embodiment. The three-dimensional scanner 200 according to this embodiment is an example of a device that measures the wear state of the edge ring 87, and is not limited to this configuration.

[0043] The three-dimensional scanner 200 has a measurement stage 203, an imaging unit 201, a driving unit 202, and a detection control unit 204. The detection control unit 204 has a storage unit 206 and a three-dimensional measurement unit 208. An edge ring 87 is placed on the mounting surface of the measurement stage 203. The worn state of the edge ring 87 is indicated by a dotted line E.

[0044] The imaging unit 201 is disposed opposite the measurement stage 203 and captures an image of the edge ring 87. The driving unit 202 moves the imaging unit 201 in the height direction or horizontal direction in response to an instruction from the detection control unit 204. The imaging unit 201 scans the wear state of the edge ring 87 three-dimensionally and captures image data.

[0045] The image data is transferred to the detection control unit 204 and stored in the storage unit 206. The three-dimensional measurement unit 208 generates three-dimensional data representing the three-dimensional wear state of the edge ring 87 (three-dimensional wear amount, wear position (wear area), wear shape, etc.) from the difference between the image data and the state of the edge ring 87 when it was new. The three-dimensional data is sent to the 3D printer 100.

[0046] [3D scanner in action] Next, an example of the operation of the three-dimensional scanner 200 will be described with reference to FIG. 4. FIG. 4 is a flowchart showing an example of a three-dimensional data generation process according to this embodiment. This process starts when plasma processing has been performed for a predetermined time in the plasma processing apparatus 1, or when the edge ring 87 arranged in the plasma processing apparatus 1 has worn down to a predetermined level. The degree of wear of the edge ring 87 may be determined from etching characteristics such as the etched shape and etching rate of the processed wafer W. The worn edge ring 87 is removed from the plasma processing apparatus 1 and carried to the three-dimensional scanner 200 (step S10).

[0047] The edge ring 87 is placed on the placement surface of the measurement stage 203. The imaging unit 201 three-dimensionally scans the edge ring 87 (step S10). Image data of the scanned edge ring 87 is transferred to the detection control unit 204.

[0048] The three-dimensional measuring unit 208 generates three-dimensional data indicating the three-dimensional wear amount, wear position, wear shape, etc. of the edge ring 87 from the difference between the image data of the edge ring 87 and the state of the edge ring 87 when new (step S12). The three-dimensional measuring unit 208 transmits the generated three-dimensional data to the 3D printer 100 (step S14), and ends this process.

[0049] This allows the 3D printer 100 to obtain three-dimensional data indicating the wear state of the edge ring 87, and based on the three-dimensional data, repair the worn portions of the edge ring 87 and reshape the edge ring 87 back to its original, brand new state.

[0050] [3D printer operation] Next, an example of the operation of the 3D printer 100 will be described with reference to Fig. 5. Fig. 5 is a flowchart showing an example of a part repair and formation process according to this embodiment. When this process starts, the second control unit 150 receives three-dimensional data from the three-dimensional scanner 200 (step S20).

[0051] Next, the second control unit 150 stores the three-dimensional data in a storage unit such as the RAM 156. The second control unit 150 determines whether the amount of wear of the edge ring 87 has exceeded a threshold based on the three-dimensional data (step S22). If the second control unit 150 determines that the amount of wear of the edge ring 87 has not exceeded the threshold, it determines that the wear of the edge ring 87 at this point is below a predetermined level and therefore does not need to be repaired, and ends this process.

[0052] On the other hand, if the second control unit 150 determines in step S22 that the wear amount of the edge ring 87 exceeds the threshold, it determines that the edge ring 87 needs to be repaired, and transports the edge ring 87 to the 3D printer 100 and places it on the stage 102 (step S24).

[0053] Next, the second control unit 150 controls the driving unit 108 based on the three-dimensional data to move the raw material supply head 105 and the laser scanning device 104 (step S26). Next, the second control unit 150 irradiates the laser light A while supplying the raw material SiC powder B from the raw material storage unit 107 (step S28). This melts (see C in FIG. 2) and solidifies the SiC powder B, forming a solidified layer (see D in FIG. 2) at a position corresponding to the wear state of the edge ring 87.

[0054] Next, the second control unit 150 determines whether the repair of the worn portion of the edge ring 87 is complete (step S30). If the second control unit 150 determines that the repair of the worn portion of the edge ring 87 is not complete, the process returns to step S26 and repeats the processes of steps S26 to S30. On the other hand, if the second control unit 150 determines in step S30 that the repair of the worn portion of the edge ring 87 is complete, the process ends.

[0055] As described above, the method for forming a part such as the edge ring 87 according to this embodiment includes a step of irradiating an energy beam onto the raw material for the part while supplying the raw material based on three-dimensional data indicating the wear state of the part.

[0056] This allows parts such as the edge ring 87 to be repaired. As a result, even if a part such as the edge ring 87 wears out beyond a certain level, it is no longer necessary to replace the part with a new one, and the consumption of parts can be reduced.

[0057] Furthermore, the wear state of the part to be repaired is measured using a 3D scanner 200. After the measurement, the part is repaired by irradiating it with an energy beam while supplying the raw materials for the part based on the 3D data showing the wear state of the part. This makes it possible to shorten the lead time required for manufacturing the part.

[0058] However, the method for forming a part such as the edge ring 87 according to this embodiment is not limited to irradiating the raw material of the part with an energy beam while supplying the raw material based on three-dimensional data indicating the wear state of the part. For example, when it is necessary to reshape the edge ring 87 due to reasons other than wear of the part caused by plasma, the part may be reshaped by irradiating the raw material of the part with an energy beam while supplying the raw material based on three-dimensional data indicating the surface condition of the part.

[0059] [Type of 3D printer] In this embodiment, a directed energy deposition 3D printer is used as an example of a 3D printer 100 that repairs the edge ring 87. In a directed energy deposition 3D printer, a powder or wire-like raw material is supplied, the raw material is melted with laser light in the space inside the chamber 110, and the melted raw material is deposited at a predetermined position on the part to repair the part. However, the 3D printer 100 is not limited to a 3D printer with such a configuration.

[0060] For example, a powder bed fusion 3D printer may be used. In a powder bed fusion 3D printer, powdered raw material is spread on a stage and melted with laser light or the like, and then the powdered raw material is spread again and melted with laser light or the like, repeating this process to repair the part. 3D printers other than directed energy deposition and powder bed fusion may also be used to repair the part. Examples of 3D printers other than those mentioned above include binder injection 3D printers, sheet lamination 3D printers, photopolymerization curing (stereolithography) 3D printers, and material extrusion (fused deposition modeling) 3D printers.

[0061] Furthermore, when the part material is a non-metallic material such as resin or oxide, the process of irradiating an energy beam while supplying a non-metallic raw material performed by the 3D printer uses ultraviolet light and light of other frequency bands as the energy beam. As a result, the part formation method according to this embodiment can repair not only parts made of metal, but also parts made of non-metallic materials such as resin. An example of a 3D printer for parts made of a non-metallic material is a material-jetting 3D printer that uses ultraviolet light to solidify and layer non-metallic materials sprayed from an inkjet head.

[0062] Although the component forming method and substrate processing system have been described above using the above-mentioned embodiments, the component forming method and substrate processing system according to the present invention are not limited to the above-mentioned embodiments, and various modifications and improvements are possible within the scope of the present invention. The features described in the above-mentioned embodiments can be combined within a range that does not contradict each other.

[0063] For example, in the above embodiment, a method for forming the edge ring 87 has been described that includes a step of measuring the wear state of the edge ring 87 and a step of irradiating an energy beam onto a raw material for the edge ring 87 while supplying the raw material in accordance with the measured wear state of the edge ring 87. However, the present invention is not limited to this, and may include a step of measuring the surface state of the edge ring 87 and a step of irradiating an energy beam onto the raw material for the edge ring 87 while supplying the raw material in accordance with the measured surface state of the edge ring 87.

[0064] For example, the surface condition of a component such as the edge ring 87 may include scratches or damage in addition to wear of the edge ring 87 due to plasma. Even if the surface of the component is damaged, the surface condition of the component, including the damaged area, can be measured, and the component can be repaired or re-formed based on the measurement results using the component forming method of the present invention.

[0065] The plasma processing apparatus according to the present invention can be applied to any type of plasma processing apparatus, including Capacitively Coupled Plasma (CCP), Inductively Coupled Plasma (ICP), Radial Line Slot Antenna, Electron Cyclotron Resonance Plasma (ECR), and Helicon Wave Plasma (HWP).

[0066] In this specification, a wafer W has been described as an example of a substrate, but the substrate is not limited to this and may be various substrates used in LCDs (Liquid Crystal Displays) and FPDs (Flat Panel Displays), CD substrates, printed circuit boards, etc.

[0067] The above-disclosed embodiments include, for example, the following aspects. (Appendix 1) 1. A method of forming a component for use in a plasma processing apparatus, comprising: irradiating the raw material with an energy beam while supplying the raw material according to the surface condition of the component; How the part is formed. (Appendix 2) measuring the surface condition of the component; the step of irradiating the energy beam is performed after the step of measuring the surface condition of the component is performed. 10. A method of forming a component as described in claim 1. (Appendix 3) The surface condition of the part is measured as three-dimensional data. 3. A method for forming a component according to claim 1 or 2. (Appendix 4) The three-dimensional data is measured by a non-contact three-dimensional scanner. 4. A method of forming a component as described in Appendix 3. (Appendix 5) The raw material is in powder or wire form. A method for forming a component according to any one of appendices 1 to 4. (Appendix 6) The raw material is any one of quartz, SiC, Si, and tungsten. A method for forming a component according to any one of appendices 1 to 5. (Appendix 7) The step of irradiating the energy beam involves irradiating the raw material with an optical laser or an electron beam when the raw material is a metal, and irradiating the raw material with ultraviolet light when the raw material is not a metal. A method for forming a component according to any one of appendices 1 to 6. (Appendix 8) The component is at least one of an edge ring, a cover ring, an insulator ring, and a top shield ring. A method for forming a component according to any one of appendices 1 to 7. (Appendix 9) The step of measuring the surface condition of the component includes measuring a wear state of the component, the step of irradiating the energy beam includes irradiating the raw material with the energy beam while supplying the raw material of the component in accordance with a wear state of the component; A method for forming a component according to any one of appendices 1 to 8. (Appendix 10) A processing vessel; a component disposed inside the processing vessel; The component is formed by a process of irradiating a raw material of the component with an energy beam while supplying the raw material in accordance with a surface condition of the component. (Appendix 11) the component is formed by a process of measuring a surface condition of the component, and then irradiating an energy beam onto a raw material for the component while supplying the raw material in accordance with the measured surface condition of the component. 11. The substrate processing system of claim 10. (Appendix 12) The surface condition of the part is measured as three-dimensional data. 12. The substrate processing system according to claim 10 or 11. (Appendix 13) The three-dimensional data is measured by a non-contact three-dimensional scanner. 13. The substrate processing system of claim 12. (Appendix 14) The raw material is in powder or wire form. 14. A substrate processing system according to any one of claims 10 to 13. (Appendix 15) The raw material is any one of quartz, SiC, Si, and tungsten. 15. A substrate processing system according to any one of claims 10 to 14. (Appendix 16) The step of irradiating the energy beam involves irradiating the raw material with an optical laser or an electron beam when the raw material is a metal, and irradiating the raw material with ultraviolet light when the raw material is not a metal. 16. A substrate processing system according to any one of claims 10 to 15. (Appendix 17) The component is at least one of an edge ring, a cover ring, an insulator ring, and a top shield ring. 17. A substrate processing system according to any one of claims 10 to 16. (Appendix 18) The step of measuring the surface condition of the component includes measuring a wear state of the component, the step of irradiating the energy beam includes irradiating the raw material with the energy beam while supplying the raw material of the component in accordance with a wear state of the component; 18. A substrate processing system according to any one of claims 10 to 17. [Explanation of symbols]

[0068] 1. Plasma processing equipment 10 Processing container 15 Gas supply source 20 Mounting table 21 Electrostatic chuck 21a Electrode membrane 22 Foundation 25 DC power supply 26 Heater 32 1st high frequency power supply 34 2nd high frequency power supply 40 shower head 41 Top Shield Ring 42 Shield Ring 49 Exhaust duct 50 Exhaust system 60 First Control Section 81 Baffle plate 87 Edge Ring 86 Insulator ring 89 Covering 100 3D printers 110 Chamber 102 Stages 104 Laser Scanner 105 Raw material supply head 106 Light source 107 Raw material storage area 150 Second Control Section U Plasma treatment space D Exhaust space

Claims

1. a plasma treatment vessel; an annular consumable part disposed within the plasma processing vessel; the annular consumable part includes a reforming portion made of the same material as the material that constitutes the annular consumable part; The reformed portion is a solidified layer formed by melting and solidifying the raw material by irradiation with an optical laser or an electron beam if the raw material is a metal, or by irradiation with ultraviolet light if the raw material is other than the metal. Plasma processing equipment.

2. The reformed portion is formed on a worn portion of the annular consumable part after plasma treatment. The plasma processing apparatus according to claim 1 .

3. The annular consumable part including the reshaped portion after the plasma treatment is The annular consumable part has the same shape as that of the annular consumable part before the plasma treatment. The plasma processing apparatus according to claim 2 .

4. The raw material constituting the annular consumable part is any one of quartz, SiC, Si, and tungsten. The plasma processing apparatus according to any one of claims 1 to 3.

5. the annular consumable part is at least one of an edge ring, a cover ring, an insulator ring, and a top shield ring; The plasma processing apparatus according to any one of claims 1 to 4.

6. An annular consumable part for a plasma processing apparatus that is disposed in a plasma processing vessel, a reforming section made of the same material as the material that constitutes the annular consumable part; The reformed portion is a solidified layer formed by melting and solidifying the raw material by irradiation with an optical laser or an electron beam if the raw material is a metal, or by irradiation with ultraviolet light if the raw material is other than the metal. Annular wear parts.

7. The reformed portion is formed on a worn portion of the annular consumable part after plasma treatment.

7. The component of claim 6.

8. The annular consumable part including the reshaped portion after the plasma treatment is The annular consumable part has the same shape as that of the annular consumable part before the plasma treatment.

8. The component of claim 7.

9. The raw material constituting the annular consumable part is any one of quartz, SiC, Si, and tungsten. The component according to any one of claims 6 to 8.

10. the annular consumable part is at least one of an edge ring, a cover ring, an insulator ring, and a top shield ring; The component according to any one of claims 6 to 9.

11. 1. A method for manufacturing an annular consumable part including a remodeling portion for a plasma processing apparatus, comprising: and irradiating an energy beam onto a surface of the annular consumable part while supplying the raw material constituting the annular consumable part to the surface of the annular consumable part based on three-dimensional data of the annular consumable part. A method for manufacturing annular consumable parts.

12. and acquiring three-dimensional data of the annular consumable part after consumption. The method for manufacturing an annular consumable part according to claim 11.

13. comparing the amount of wear of the annular consumable part with a threshold value; When the amount of wear exceeds the threshold, an energy beam is irradiated onto the raw material constituting the annular consumable part while supplying the raw material to the surface of the annular consumable part. The method for manufacturing an annular consumable part according to claim 11 or 12.

14. the three-dimensional data includes at least one of a wear amount, a wear position, and a wear shape of the annular consumable part; The method for manufacturing the annular consumable part according to any one of claims 11 to 13.

15. the three-dimensional data is three-dimensional data of the annular consumable part after plasma treatment; The method for manufacturing the annular consumable part according to any one of claims 11 to 14.

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