Atomic Layer Deposition Reaction Chambers and Atomic Layer Deposition Reactors

Abstract

The present invention relates to an atomic layer deposition chamber (20) and a reactor (10). The reaction chamber (20) has a first end (24), a second end (26), a central longitudinal axis (X) between the first and second ends (24, 26), a length (L) of the central longitudinal axis (X), first and second side walls (27) and (28) that define a width (W) of the reaction chamber (20), and a central width axis (Y) extending perpendicular to the central longitudinal axis (X). The reaction chamber (20) has a width (W) along the central longitudinal axis (X) that increases from the first end (24) toward the central width axis (Y) and decreases from the central width axis (Y) toward the second end (26).

Description

[Technical Field]

[0001] The present invention relates to an atomic layer deposition reaction chamber, more particularly to a reaction chamber according to the preamble of claim 1. The present invention further relates to an atomic layer deposition reactor, more particularly to a reactor according to the preamble of claim 12. [Background technology]

[0002] The atomic layer deposition (ALD) process and one ALD cycle consist of four gas exchanges to produce one monolayer. Therefore, the ALD cycle time is the limiting factor for growth rate. Furthermore, the cycle time is determined by how quickly the pulsed chemicals can be distributed to the substrate surface and how quickly residual gases can be purged from the surface. To achieve good gas exchange and high quality, uniform gas flow across the entire substrate surface is necessary. Uneven gas flow across the substrate means that the gas flow is different across different parts of the substrate surface. Due to the uneven gas flow, the gas dosage during one ALD cycle must be increased, which increases the cycle time and the gas residence time in the reaction chamber. This slows down the process time, reduces efficiency, and reduces material efficiency.

[0003] Prior art reaction chambers and ALD reactors compromise uniform gas flow, short cycle times, and good material efficiency, especially when processing round substrates such as silicon wafers, where gas exchange is more pronounced at the edges than in the center.

[0004] FIG. 2 illustrates an atomic layer deposition chamber 20 of a prior art atomic layer deposition reactor 10. The reaction chamber 20 of FIG. 2 has a first end 24 and a second end 26 on opposite sides of the reaction chamber 20. The reaction chamber 20 further includes a gas inlet 30 near the first end 24 and a gas outlet 40 near the second end 26. The gas inlet 30 and the gas outlet 40 are located at the bottom 22 of the reaction chamber 20. A substrate holder 50 is positioned between the gas inlet 30 and the gas outlet 40 for supporting one or more circular substrates. Gas is supplied from the gas inlet 30 and exhausted from the gas outlet 40 to flow through the reaction chamber 20 from the gas inlet 30 to the gas outlet 40. The gas flow between the gas inlet 30 and the gas outlet 40 flows across the surface of one or more circular substrates.

[0005] In the prior art reaction chamber 20, as shown in FIG. 2, the reactor walls are linear in the direction between the first end 24 and the second end 26, or between the gas inlet 30 and the gas outlet 40. Gas molecules in the gas flow have two flow paths from the gas inlet 30 to the gas outlet: a first flow path A and a second flow path B. Gas supplied from the gas inlet 30 tends to pass through flow path A because its conductance is smaller than that of flow path B. Therefore, most of the gas molecules pass through flow path A, creating a bypass effect as gas molecules flow near the sidewalls of the reaction chamber and near the edges of the circular substrate. A small amount of gas molecules pass through flow path B. This same bypass effect also occurs in circular reaction chambers. The bypass effect is particularly problematic for circular substrates because only a small area of ​​the substrate surface is close to the sidewall of the reaction chamber between gas inlet 30 and gas outlet 40. Additionally, the reaction chamber of Figure 2 has gas pockets that slow the gas flow within reaction chamber 20.

[0006] The bypass effect of the prior art reaction chamber 20 reduces precursor gas economy because a large portion of the precursor molecules bypass the substrate surface to be coated and flow directly to the gas outlet 40. Therefore, the fact that only a small portion of the precursor molecules follow flow path B results in a precursor gas dosage deficiency in the center of the reaction chamber 20. This dosage deficiency creates further uniformity issues on the substrate surface and the coating deposited thereon. If the dosage deficiency in the center of the reaction chamber 20 is compensated for by a high excess of precursor delivered to the reaction chamber 20, purging the reaction chamber 20 takes longer because there are precursor molecules to purge. This extends the ALD cycle time, compromising not only material efficiency but also process efficiency. Summary of the Invention

[0007] It is an object of the present invention to provide an atomic layer deposition chamber and an atomic layer deposition reactor that overcomes or at least mitigates the disadvantages of the prior art.

[0008] The object of the invention is achieved by an atomic layer deposition chamber, characterized in that it is defined in independent claim 1. The object of the invention is further achieved by an atomic layer deposition reactor, characterized in that it is defined in independent claim 12.

[0009] Preferred embodiments of the invention are disclosed in the dependent claims.

[0010] The present invention is based on the idea of ​​providing an atomic layer deposition chamber having a first end, a second end opposite the first end, a longitudinal central axis extending between the first and second ends, and a length between the first and second ends in the direction of the longitudinal central axis. The reaction chamber further comprises a first sidewall extending between the first and second ends and a second sidewall opposite the first sidewall and extending between the first and second ends, the first and second sidewalls defining a width of the reaction chamber between the first and second ends, and the reaction chamber has a width central axis extending between the first and second sidewalls and perpendicular to the longitudinal central axis. The reaction chamber also comprises a gas inlet for supplying gas to the reaction chamber and a gas outlet for exhausting gas from the reaction chamber. The gas inlet and gas outlet are spaced apart along the longitudinal central axis of the reaction chamber.

[0011] According to the present invention, the reaction chamber has a width that increases along the central longitudinal axis from the first end toward the central width axis. The reaction chamber also has a width that decreases along the central longitudinal axis from the central width axis toward the second end. The length of the reaction chamber is greater than the width of the reaction chamber along the central width axis.

[0012] A reaction chamber with a width that increases and decreases in the direction between the first and second ends allows the sidewalls to be positioned at a very short distance from the substrate. Furthermore, the increasing and decreasing widths allow the sidewalls of the reaction chamber to be positioned partially along the outer edge of a circular substrate. Furthermore, the elliptical or elliptical-like shape provided by a length greater than width allows for a sufficient distance between the substrate and the gas inlet in the direction of the first and second ends so that precursor gas molecules have sufficient time and space to diffuse before contacting the substrate. Therefore, bypass effects are minimized.

[0013] In one embodiment, the reaction chamber has a width that increases along the central longitudinal axis from a first end to the central longitudinal axis and a width that decreases along the central longitudinal axis from the central longitudinal axis to a second end.

[0014] Thus, the width of the reaction chamber increases from the first end toward the width central axis and decreases from the width central axis toward the second end.

[0015] In another embodiment, the reaction chamber comprises an area of ​​increased width between the first end and the central width axis, the area of ​​increased width extending from the first end to the central width axis and having an increased width along the central longitudinal axis from the first end to the central width axis. The reaction chamber further comprises an area of ​​decreased width between the central width axis and the second end, the area of ​​decreased width extending from the central width axis to the second end and having a decreased width along the central longitudinal axis from the central width axis to the second end.

[0016] Areas of increasing and decreasing width are provided in the elliptical or oval-like reaction chamber to allow for good precursor flow uniformity and fast flow between the first and second ends or between the gas inlet and gas outlet.

[0017] In one embodiment, the first and second side walls comprise wall portions of increasing width extending from the first end to the central width axis. The increasing width wall portions are planar or curved wall portions. The first and second side walls comprise wall portions of decreasing width extending from the central width axis to the second end. The decreasing width wall portions are planar or curved wall portions.

[0018] The linearly increasing and decreasing walls provide a simple reaction chamber structure.

[0019] The curved walls provide a reaction chamber shape that more closely matches the shape of the circular substrate.

[0020] In another embodiment, the first and second side walls include wall portions of increasing width within the area of ​​increasing width, the wall portions of increasing width being planar or curved. The first and second side walls include wall portions of decreasing width within the area of ​​decreasing width, the wall portions of decreasing width being planar or curved.

[0021] The linearly increasing and decreasing width area provides a simple reaction chamber structure.

[0022] The curved, expanding and contracting area provides a reaction chamber shape that more closely matches the shape of the circular substrate.

[0023] In one embodiment, the reaction chamber has a width that increases along the central longitudinal axis in a direction from the first end toward the width axis and a width that decreases along the central longitudinal axis in a direction from the width axis toward the second end. The reaction chamber further has a constant width along the central longitudinal axis from the width axis toward the first end and from the width axis toward the second end. The reaction chamber further has a constant width along the central longitudinal axis from the width axis toward the first end and from the width axis toward the second end.

[0024] The constant width between the increasing and decreasing widths can enhance the provision of a more uniform and stable gas flow. Additionally, the substrate holder can be more easily placed in the reaction chamber.

[0025] In another embodiment, the reaction chamber comprises an increasing width area between the first end and the central width axis. The increasing width area comprises an increasing width along the central longitudinal axis in a direction from the first end to the central width axis. The reaction chamber comprises a decreasing width area between the central width axis and the second end. The decreasing width area comprises a decreasing width along the central longitudinal axis in a direction from the central width axis to the second end. The reaction chamber further comprises a constant width area between the increasing width area and the decreasing width area.

[0026] The constant width area between the increasing and decreasing width areas can enhance the provision of a more uniform and stable gas flow. Additionally, the constant width area provides a structurally better location for the substrate holder.

[0027] In one embodiment, the reaction chamber includes a substrate holder positioned within the reaction chamber between a first end and a second end, and between a gas inlet and a gas outlet.

[0028] In another embodiment, the reaction chamber includes a substrate holder disposed within the reaction chamber between the first end and the second end and between the gas inlet and the gas outlet, the substrate holder being symmetrically disposed within the reaction chamber about an intersection of the central longitudinal axis and the central width axis.

[0029] Thus, the substrate holder benefits from increased width areas and decreased width areas due to the fast and uniform gas flow through the substrate holder.

[0030] In one embodiment, the substrate holder is arranged to extend in the direction of the central longitudinal axis in the areas of increased width and decreased width.

[0031] In another embodiment, the substrate holder is positioned to extend in the direction of the central longitudinal axis from the area of ​​increased width to the area of ​​decreased width.

[0032] Thus, the substrate may be positioned to extend into areas of increased width and areas of decreased width such that the sidewalls of the reaction chamber are located near the edges of the substrate.

[0033] In a further embodiment, the substrate holder is arranged to extend in the direction of the central longitudinal axis in areas of increasing width, decreasing width, and constant width.

[0034] In yet another embodiment, the substrate holder is positioned to extend in the direction of the central longitudinal axis from an area of ​​increasing width through an area of ​​constant width to an area of ​​decreasing width.

[0035] Thus, the substrate may be arranged to extend from a constant width area to an increasing width area and a decreasing width area such that the sidewalls of the reaction chamber are also located close to the edges of the substrate in the direction towards the gas inlet and gas outlet.

[0036] In one embodiment, the substrate holder has a front end opposite the first end and a rear end opposite the second end along the central longitudinal axis. The substrate holder defines a substrate zone within the reaction chamber between the front and rear ends along the central longitudinal axis. The reaction chamber also has a supply zone extending along the central longitudinal axis between the first end of the reaction chamber and the front end of the substrate holder. A gas inlet is provided in the supply zone. The reaction chamber further has a discharge zone extending along the central longitudinal axis between the second end of the reaction chamber and the rear end of the substrate holder. A gas outlet is provided in the discharge zone. An area of ​​increased width extends along the central longitudinal axis from the supply zone to the substrate zone, and an area of ​​decreased width extends along the central longitudinal axis from the discharge zone to the substrate zone.

[0037] Thus, the substrate area overlaps the width increasing area and the width decreasing area in the longitudinal direction of the central longitudinal axis, and the sidewall of the reaction chamber is therefore close to the edge of the substrate within the substrate area.

[0038] In one embodiment, the constant width area is provided in the substrate zone in the direction of the central longitudinal axis.

[0039] In another embodiment, the constant width area is provided within the substrate zone in the direction of the central longitudinal axis, the substrate zone having a length in the direction of the central longitudinal axis that is greater than the constant width area.

[0040] Therefore, a uniform gas flow within the substrate area is achieved.

[0041] In one embodiment, a first distance between the substrate holder and the first or second sidewall along the central width axis is less than a second distance between the substrate holder and the first or second end along the central longitudinal axis.

[0042] Therefore, the substrate is closer to the sidewall of the reaction chamber, allowing for a larger space and distance between the gas inlet / gas outlet and the substrate holder.

[0043] In one embodiment, the substrate holder is arranged to support one or more circular substrates or circular semiconductor wafers.

[0044] The reaction chamber of the present invention is particularly suited to circular substrates because the width can be increased or decreased to minimize the distance between the circular substrate and the sidewalls of the reaction chamber.

[0045] In some embodiments, the reaction chamber comprises a bottom wall, a top wall, first and second sidewalls, and first and second ends, the first and second sidewalls, and the first and second ends extending between the bottom wall and the top wall.

[0046] In one embodiment, the gas inlet and gas outlet are located in the bottom wall, allowing for the construction of a simple reaction chamber.

[0047] In another embodiment, the gas inlet is located on the bottom wall near the first end and the gas outlet is located on the bottom wall near the second end, which allows for a large distance between the gas inlet / gas outlet and the substrate holder or substrate while simplifying the construction of the reaction chamber.

[0048] In a further embodiment, the gas inlet is located at the first end and the gas outlet is located at the second end, which allows for a large distance between the gas inlet / gas outlet and the substrate holder or substrate.

[0049] The present invention also relates to an atomic layer deposition reactor comprising a vacuum chamber and a reaction chamber disposed within the vacuum chamber. The reaction chamber has a first end, a second end opposite the first end, a longitudinal central axis extending between the first and second ends, and a length between the first and second ends along the longitudinal central axis. The reaction chamber also has first and second sidewalls extending between the first and second ends, a width central axis extending perpendicular to the longitudinal central axis between the first and second sidewalls, and a width between the first and second sidewalls in the direction of the width central axis. The reaction chamber further comprises a gas inlet for supplying gas into the reaction chamber and a gas outlet for exhausting gas from the reaction chamber. The gas inlet and the gas outlet are spaced apart on opposite sides of the width central axis along the longitudinal central axis.

[0050] According to the present invention, the first and second side walls of the reaction chamber are arranged to define a width that increases along the central longitudinal axis in a direction from the gas inlet toward the central width axis and a width that decreases along the central longitudinal axis in a direction from the central width axis toward the gas outlet, and the length of the reaction chamber is greater than the width of the reaction chamber along the central width axis.

[0051] The increasing and decreasing widths in the direction between the gas inlet and gas outlet allow the sidewalls to be positioned at a very short distance from the outer edge of the substrate, especially for circular substrates. Furthermore, the elliptical or elliptical-like shape provided by the longer length than width allows for a sufficient distance between the substrate and the gas inlet in the direction of the longitudinal central axis so that precursor gas molecules have enough time and space to diffuse before contacting the substrate. Therefore, bypass effects are minimized.

[0052] In one embodiment, the reactor comprises at least one gas inlet connection extending from outside the vacuum chamber to the reaction chamber and connected to a gas inlet for supplying gas from outside the vacuum chamber to the reaction chamber, and at least one gas outlet connection extending from outside the vacuum chamber to the reaction chamber and connected to a gas outlet for exhausting gas from the reaction chamber to outside the vacuum chamber.

[0053] Therefore, the gas supply and exhaust to the reaction chamber are performed outside the vacuum chamber, creating a controlled and safe processing environment within the reaction chamber.

[0054] In one embodiment, the reaction chamber has a width that increases along the central longitudinal axis in a direction from the gas inlet toward the central width axis. The reaction chamber has a width that decreases along the central longitudinal axis in a direction from the central width axis toward the gas outlet. The reaction chamber further has a constant width along the central longitudinal axis in a direction from the central width axis toward the gas inlet and in a direction from the central width axis toward the gas outlet.

[0055] The reaction chamber of the reactor may be a reaction chamber as disclosed above.

[0056] An advantage of the present invention is that the increasing and decreasing widths in the direction between the gas inlet and gas outlet and along the longitudinal central axis allow the sidewalls to be positioned at very short distances from the outer edge of the substrate, especially for circular substrates. Furthermore, the longer length than width results in an elliptical or elliptical-like shape, creating a sufficient distance from the substrate to the gas inlet along the longitudinal central axis, allowing precursor gas molecules sufficient time and space to spread before contacting the substrate. Therefore, bypass effects are minimized. At the same time, favorable flow dynamics without gas pockets within the reaction chamber are achieved, eliminating the need for significant excess volume and allowing for quick reaction purging. [Brief explanation of the drawings]

[0057] The present invention will now be described in detail by means of specific embodiments with reference to the accompanying drawings.

[0058] [Figure 1] A schematic diagram of the atomic layer deposition reactor is shown. [Figure 2] 1 is a schematic diagram of a prior art atomic layer deposition reaction chamber. [Figure 3] 1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 4] 1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 5] 1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 6] 1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 7]1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 8] 1 is a schematic diagram of one embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 9] 1 is a schematic diagram of another embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 10] 1 is a schematic diagram of another embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 11] 1 is a schematic diagram of another embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 12] 1 is a schematic diagram of another embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 13] 1A and 1B are schematic diagrams illustrating further embodiments of atomic layer deposition reaction chambers according to the present invention; [Figure 14] 1A and 1B are schematic diagrams illustrating further embodiments of atomic layer deposition reaction chambers according to the present invention; [Figure 15] 1 is a schematic diagram illustrating yet another embodiment of an atomic layer deposition reaction chamber according to the present invention. FIG. [Figure 16] 1 is a schematic diagram illustrating yet another embodiment of an atomic layer deposition reaction chamber according to the present invention. FIG. [Figure 17] 1 is a schematic diagram of an alternative embodiment of an atomic layer deposition reaction chamber according to the present invention; [Figure 18] 1 is a schematic diagram of a modified atomic layer deposition reaction chamber according to the present invention; FIG. [Figure 19]1 is a schematic diagram of a modified atomic layer deposition reaction chamber according to the present invention; FIG. [Figure 20] 15 shows a schematic variation of the embodiment of FIGS. 13 and 14; DETAILED DESCRIPTION OF THE INVENTION

[0059] FIG. 1 shows a schematic diagram of an atomic layer deposition reactor 10. The reactor 10 includes a vacuum chamber 90. The vacuum chamber 90 is constructed to withstand significant pressure. A vacuum device 92 is connected to the vacuum chamber 90 and is positioned to provide a vacuum or pressure within the vacuum chamber 90. The vacuum device 92 is connected to the vacuum chamber 90 via a vacuum connection 94.

[0060] The vacuum device 92 is a device such as a vacuum pump that can create a vacuum or a pressurized state inside the vacuum chamber 90. The vacuum device 92 is disposed outside the vacuum chamber 90.

[0061] The reactor 10 further comprises a reaction chamber 20 disposed within the vacuum chamber 90. The substrate is processed within the reaction chamber 20.

[0062] Reaction chamber 20 has a first end 24, a second end 26 opposite first end 24, and a first sidewall 27 and a second sidewall 28 extending between first end 24 and second end 26. Reaction chamber 20 has a length between first end 24 and second end 26 and a width between first sidewall 27 and second sidewall 28.

[0063] Reaction chamber 20 further includes a bottom wall 23 and a top wall 25. A first end 24, a second end 26, a first sidewall 27, and a second sidewall 28 extend between bottom wall 23 and top wall 25.

[0064] The reaction chamber 20 has a reaction space 21 defined by walls 23, 25, 24, 26, 27, and 28.

[0065] The reaction chamber 20 is provided with gas inlets 30 through which precursor gases, purge gases, etc., are supplied into the reaction chamber 20. In some embodiments, there may be more than one gas inlet 30.

[0066] The gas inlet 30 is connected to one or more gas sources 100, such as a precursor gas source and a purge gas source. The gas source 100 is located outside the reaction chamber 20 and outside the vacuum chamber 90. The gas source 100 is connected to the gas inlet 30 for supplying gas into the reaction chamber 20. This allows gas to be supplied into the reaction chamber 20 from outside the vacuum chamber 90. The gas source 100 is connected to the gas inlet 30 via a gas supply connection 110. The gas supply connection 110 extends from the gas source 100 outside the vacuum chamber 90 to the reaction chamber 20 and the gas inlet 30. The gas source 100 may be a gas bottle or the like.

[0067] The reaction chamber 20 also includes a gas outlet 40 through which precursor gases, purge gases, etc., are exhausted from the reaction chamber 20. In some embodiments, more than one gas outlet 40 is provided.

[0068] The gas outlet 40 is connected to a discharge device 200. The discharge device 200 is located outside the reaction chamber 20 and outside the vacuum chamber 90. The discharge device 200 is connected to the gas outlet 40 for discharging gas into the reaction chamber 20. This allows the gas to be discharged from the reaction chamber 20 out of the vacuum chamber 90. The discharge device 200 is connected to the gas outlet 40 using a gas discharge connection 210. The gas discharge connection 210 extends from the discharge device 200 outside the vacuum chamber 90 to the reaction chamber 20 and the gas outlet 40.

[0069] Thus, gases such as precursor gases and purge gases flow through the reaction chamber 20 from the gas inlet 30 to the gas outlet 40. The substrate to be processed is placed within the reaction chamber 20 between the gas inlet 30 and the gas outlet 40.

[0070] The reaction chamber 20 further includes a substrate holder on which one or more substrates are positioned and supported for processing. The substrate holder is positioned between the gas inlet 30 and the gas outlet 40 such that gas flows through the substrate holder between the gas inlet 30 and the gas outlet 40, exposing the surface of the substrate to the gas.

[0071] The gas inlet 30 and the gas outlet 40 are provided near the first end 24 and the second end 26 of the bottom wall 23, respectively.

[0072] Alternatively, the gas inlet 30 and gas outlet 40 are provided in the top wall 25 near the first end 24 and second end 26, respectively.

[0073] In an alternative embodiment, gas inlet 30 and gas outlet 40 are provided at first end 24 and second end 26, respectively.

[0074] Thus, the gas inlet 30 and the gas outlet 40 are spaced apart from each other in the direction between the first end 24 and the second end 26 within the reaction chamber 20. Thus, a substrate can be disposed between the gas inlet 30 and the gas outlet 40.

[0075] In the present invention, the reaction chamber 20 has a generally elliptical or elliptical-like shape. This means that the length of the reaction chamber 20 between the first end 24 and the second end 26 is greater than the width or maximum width of the reaction chamber 20. Furthermore, the elliptical shape means that the width of the reaction chamber 20 increases along at least a portion of the length of the reaction chamber in a direction from the first end 24 to the second end 26, and that the width of the reaction chamber 20 increases along at least a portion of the length of the reaction chamber in a direction from the second end 26 to the first end 24. Thus, the width of the reaction chamber 20 increases in a direction from the first end 24 to the center of the reaction chamber 20 and from the second end 26 to the center of the reaction chamber 20. The width of the reaction chamber 20 is defined by the sidewalls of the reaction chamber 20.

[0076] The oval or oval-like shape of the reaction chamber 20 is formed between the first end 24 and the second end 26. Alternatively, the oval or oval-like shape is formed at least between the gas inlet 30 and the gas outlet 40.

[0077] In the embodiment of FIGS. 3 to 19, the gas inlet 30 and the gas outlet 40 are provided in the bottom wall 23 of the reaction chamber 20.

[0078] In alternative embodiments of the present invention, the gas inlet 30 and gas outlet 40 are located in the top wall 25 or the first end 24 and second end 26 of the reaction chamber 20, respectively. The present invention is not limited to the exact locations of the gas inlet 30 and gas outlet 40.

[0079] Further, generally, reaction chamber 20 has a length L between first end 24 and second end 26. Reaction chamber 20 also has a central longitudinal axis X that extends along the length of reaction chamber 20 and in a direction between first end 24 and second end 26.

[0080] The first and second sidewalls 27, 28 define a width W of the reaction chamber 20. In the reaction chamber 20 of the present invention, the width W of the reaction chamber 20 varies along the central longitudinal axis X. The reaction chamber 20 also includes a central width axis Y that extends in a direction between the first and second sidewalls 27, 28 and perpendicular to the central longitudinal axis X.

[0081] A central longitudinal axis X extends along the length of the reaction chamber, and a central width axis Y extends along the width of the reaction chamber.

[0082] A central longitudinal axis X bisects the reaction chamber 20 lengthwise, and a central width axis Y bisects the reaction chamber 20 widthwise.

[0083] 3 shows a top view of one embodiment of a reaction chamber 20 according to the present invention. The reaction chamber 20 has a generally oval or oval-like shape.

[0084] The reaction chamber shown in FIG. 3 comprises a first end 24, a second end 26, a first sidewall 27 extending between the first end 24 and the second end 26, and a second sidewall 28 opposite the first sidewall 27 and extending between the first end 24 and the second end 26.

[0085] In this embodiment, the gas inlet 30 and the gas outlet are provided in the bottom wall 23 .

[0086] A substrate holder 50 is disposed within reaction chamber 20 between first end 24 and second end 26, more specifically between gas inlet 30 and gas outlet 40. Substrate holder 50 is positioned to hold one or more substrates, particularly circular substrates, during processing.

[0087] Arrows A and B in Figure 3 represent the flow of gas from gas inlet 30 to gas outlet 40 within reaction chamber 20. The oval or oval-like shape of reaction chamber 20 results in a uniform flow between gas inlet 30 and gas outlet 40 across reaction chamber 20 or bottom wall 23. A more uniform amount of gas molecules travels along long flow path A along side walls 27, 28 and straight flow path B from gas inlet 30 to gas outlet 40.

[0088] 4, the reaction chamber 20 has a width W that increases along the central longitudinal axis X from the first end 24 to the central width axis Y defined by the first and second side walls 27, 28. Additionally, the reaction chamber 20 has a width W that decreases along the central longitudinal axis X from the central width axis Y to the second end 26. Thus, the reaction chamber 20 has a greatest width at the central width axis Y along the central longitudinal axis X.

[0089] Thus, the reaction chamber 20 includes an area of ​​increased width G along the central longitudinal axis X from the first end 24 to the central width axis Y. Similarly, the reaction chamber 20 includes an area of ​​decreased width H between the central width axis Y and the second end 26 along the central longitudinal axis X, as shown in FIG.

[0090] FIG. 5 shows a substrate holder 50 within the reaction chamber 20. The elliptical or elliptical-like shape of the reaction chamber 20 is arranged such that there is a first distance D1 between the substrate holder 50 and the first and second sidewalls 27, 28 along the central width axis Y and a second distance D2 between the substrate holder 50 and the first and second ends 24, 26 along the central longitudinal axis X. The elliptical or elliptical-like shape of the reaction chamber 20 is arranged such that the second distance D2 is greater than the first distance D1. This eliminates the bypass effect and allows for larger sizes of the gas inlet 30 and the gas outlet 40 without increasing the first distance D1.

[0091] As shown in FIG. 6, the substrate holder 50 is positioned between the first end 24 and the second end 26 and between the gas inlet 30 and the gas outlet 40 .

[0092] The substrate holder 50 is preferably positioned in the center of the reaction chamber 20 in a cross section taken along the central longitudinal axis X and the central width axis Y.

[0093] The substrate holder 50 has a front end 54 opposite the first end 24 and a rear end 56 opposite the second end 26 along the central longitudinal axis X. The substrate holder 50 defines a substrate zone Z2 within the reaction chamber 20 between the front end 54 and the rear end 56 along the central longitudinal axis X.

[0094] The reaction chamber 20 further includes a supply zone Z1 extending along the longitudinal central axis X between the first end 24 of the reaction chamber 20 and the front end 54 of the substrate holder 50. The gas inlet 30 is provided in the supply zone Z1. The reaction chamber 20 also includes a discharge zone Z3 extending along the longitudinal central axis X between the second end 26 of the reaction chamber 20 and the rear end 56 of the substrate holder 50. The gas outlet 40 is provided in the discharge zone Z3.

[0095] The gas inlet 30 is located near the first end 24 and the gas outlet 40 is located near the second end 26 .

[0096] The reaction chamber 20 thus comprises three zones along the central longitudinal axis X: a supply zone Z1, a substrate zone Z2, and a discharge zone Z3. Gas is supplied through a gas inlet 30 in the supply zone Z1, discharged through a gas outlet 40 in the discharge zone Z3, and flows through the substrate zone Z2.

[0097] As shown in FIG. 6 , the width-increasing area G extends from the supply zone Z1 to the substrate zone Z2 in the direction of the central longitudinal axis X. Thus, the width-increasing area G and the substrate zone Z2 partially overlap. In the embodiment of FIG. 6 , the width-increasing area G and the substrate zone Z2 overlap between the front end 54 of the substrate holder 50 and the central width axis Y. Similarly, the width-decreasing area H extends from the discharge zone Z3 to the substrate zone Z2 in the direction of the central longitudinal axis X. Thus, the width-decreasing area H and the substrate zone Z2 partially overlap. In the embodiment of FIG. 6 , the width-decreasing area H and the substrate zone Z2 overlap between the central width axis Y and the rear end 56 of the substrate holder 50.

[0098] In the embodiment of Figures 3-6, the first and second side walls 27, 28 of the reaction chamber 20 are curved. The first and second side walls 27, 28 are curved and outwardly convex between the first end 24 and the second end 26.

[0099] 7 shows a cross-sectional view of the reaction chamber 20 taken along the central width axis Y looking toward the first end 24. The substrate holder 50 includes one or more substrate support surfaces or shelves 52 for supporting one or more substrates. The substrate holder 50 is positioned a first distance D1 from the first and second sidewalls 27, 28.

[0100] 8 shows another cross-sectional view of the reaction chamber 20 taken along the central longitudinal axis X and looking toward the second sidewall 28. The substrate holder 50 is positioned a second distance D2 from the first and second ends 24, 26. The reaction chamber 20 further includes a supply zone Z1, a substrate zone Z2, and a discharge zone Z3.

[0101] 9-12 show an alternative embodiment in which the first and second side walls 27, 28 are straight or planar. The first and second side walls 27, 28 include diverging wall portions 31 extending from the first end 24 to the central width axis Y. The first and second side walls 27, 28 further include converging wall portions 41 extending from the central width axis Y to the second end 26, as shown in FIG.

[0102] The diverging wall portion 31 and the converging wall portion 41 are linear or planar.

[0103] Diverging wall portion 31 defines a width W that increases along central longitudinal axis X from first end 24 to central width axis Y. Additionally, converging wall portion 41 defines a width W that decreases along central longitudinal axis X from central width axis Y to second end 26. Thus, reaction chamber 20 has a greatest width at central width axis Y along central longitudinal axis X.

[0104] Thus, reaction chamber 20 includes an area of ​​increased width G between first end 24 and central width axis Y, along longitudinal central axis X from first end 24 to central width axis Y defined by diverging wall portions 31. Similarly, reaction chamber 20 includes an area of ​​decreased width H between central width axis Y and second end 26 along longitudinal central axis X defined by converging wall portions 41, as shown in FIG.

[0105] The diverging walls 31 and converging walls 41 provide the oval or oval-like shape of the reaction chamber 20 .

[0106] 11 shows a substrate holder 50 within the reaction chamber 20. The substrate holder 50 is positioned a first distance D1 from the first and second sidewalls 27, 28 along the central width axis Y. The substrate holder 50 is also positioned a second distance D2 from the first and second ends 24, 26 along the central longitudinal axis X. The elliptical or elliptical-like shape of the reaction chamber 20 is such that the second distance D2 is greater than the first distance D1.

[0107] As shown in FIG. 9, the substrate holder 50 is positioned between the first end 24 and the second end 26 and between the gas inlet 30 and the gas outlet 40 .

[0108] The substrate holder 50 is preferably positioned in the center of the reaction chamber 20 in a cross section taken along the central longitudinal axis X and the central width axis Y.

[0109] The reaction chamber 20 further includes a supply zone Z1 extending along the longitudinal central axis X between the first end 24 of the reaction chamber 20 and the front end 54 of the substrate holder 50. The gas inlet 30 is provided in the supply zone Z1. The reaction chamber 20 also includes a discharge zone Z3 extending along the longitudinal central axis X between the second end 26 of the reaction chamber 20 and the rear end 56 of the substrate holder 50. The gas outlet 40 is provided in the discharge zone Z3. The substrate zone Z2 is provided between the front end 54 and the rear end 56 of the substrate holder 50.

[0110] The gas inlet 30 is located near the first end 24 and the gas outlet 40 is located near the second end 26 .

[0111] The reaction chamber 20 thus comprises three zones along the central longitudinal axis X: a supply zone Z1, a substrate zone Z2, and a discharge zone Z3. Gas is supplied through a gas inlet 30 in the supply zone Z1, discharged through a gas outlet 40 in the discharge zone Z3, and flows through the substrate zone Z2.

[0112] As shown in FIG. 12 , the width-increasing area G extends in the direction of the longitudinal central axis X from the supply zone Z1 to the substrate zone Z2. Thus, the width-increasing area G and the substrate zone Z2 partially overlap. In the embodiment of FIG. 12 , the width-increasing area G and the substrate zone Z2 overlap between the front end 54 of the substrate holder 50 and the width central axis Y. Similarly, the width-decreasing area H extends in the direction of the longitudinal central axis X from the discharge zone Z3 to the substrate zone Z2. Thus, the width-decreasing area H and the substrate zone Z2 partially overlap. In the embodiment of FIG. 6 , the width-decreasing area H and the substrate zone Z2 overlap between the width central axis Y and the rear end 56 of the substrate holder 50.

[0113] Figures 13 and 14 show a variation of the embodiment of Figures 3 to 6. In the embodiment of Figures 13 and 14, the reaction chamber 20 has a generally oval or oval-like shape.

[0114] The reaction chamber of FIG. 13 comprises a first end 24, a second end 26, a first sidewall 27 extending between the first end 24 and the second end 26, and a second sidewall 28 opposite the first sidewall 27 and extending between the first end 24 and the second end 26.

[0115] In this embodiment, the gas inlet 30 and the gas outlet are provided in the bottom wall 23 .

[0116] Reaction chamber 20 includes a substrate holder 50 positioned between first end 24 and second end 26, more specifically between gas inlet 30 and gas outlet 40. Substrate holder 50 is positioned to hold one or more substrates, particularly circular substrates, during processing.

[0117] 13 and 14, the first and second side walls 27, 28 include a diverging wall portion 31 extending from the first end 24 toward the central width axis Y. The diverging wall portion 31 defines an increasing width W of the reaction chamber 20.

[0118] The first and second side walls 27, 28 further include parallel wall portions 35 that extend parallel to one another and define a constant width W along the central longitudinal axis X.

[0119] The parallel wall portions 35 extend in the direction of the longitudinal central axis X. The parallel wall portions 35 are linear or planar.

[0120] The parallel wall portion 35 extends from the branch wall portion 31 toward the second end portion 26. The parallel wall portion 35 extends from the widthwise central axis Y toward the first end portion 24 and the second end portion 26.

[0121] The first and second side walls 27, 28 include a converging wall portion 41 that extends from the parallel wall portion 35 to the second end 26. The converging wall portion 41 defines a decreasing width W of the reaction chamber 20.

[0122] The branching wall portion 31 and the converging wall portion 41 are curved wall portions. The branching wall portion 31 and the converging wall portion 41 have an outwardly convex curved shape.

[0123] The reaction chamber 20 includes an area of ​​increased width G along the central longitudinal axis X between the first end 24 and the parallel wall portion 35. The area of ​​increased width G is defined by the diverging wall portion 31. The reaction chamber 20 further includes a constant width area F extending from the area of ​​increased width G toward the second end 26 along the central longitudinal axis X. The constant width area F is defined by the parallel wall portion 35. The reaction chamber 20 further includes an area of ​​decreased width H along the central longitudinal axis X between the constant width area F and the second end 26, as shown in FIG. 14 .

[0124] The constant width area F is disposed between the increasing width area G and the decreasing width area H.

[0125] Also in this embodiment, the substrate holder 50 is located a first distance D1 from the first and second side walls 27, 28 and a second distance D2 from the first and second ends 24, 26. The oval or oval-like shape of the reaction chamber 20 is positioned such that the second distance D2 is greater than the first distance D1.

[0126] As shown in FIG. 14, the constant width area F is provided in the center of the reaction chamber 20 and extends from the widthwise central axis Y toward the first and second ends 24, 26.

[0127] The substrate holder 50 is disposed between the first end 24 and the second end 26 and between the gas inlet 30 and the gas outlet 40 .

[0128] The substrate holder 50 is preferably positioned in the center of the reaction chamber 20 in a cross section taken along the central longitudinal axis X and the central width axis Y.

[0129] The reaction chamber 20 comprises a supply zone Z1, a substrate zone Z2, and a discharge zone Z3.

[0130] As shown in FIG. 14 , the width-increasing area G extends in the direction of the longitudinal central axis X from the supply zone Z1 to the substrate zone Z2. Thus, the width-increasing area G and the substrate zone Z2 partially overlap. In the embodiment of FIG. 14 , the width-increasing area G and the substrate zone Z2 overlap between the front end 54 of the substrate holder 50 and the constant width area F. Similarly, the width-decreasing area H extends in the direction of the longitudinal central axis X from the discharge zone Z3 to the substrate zone Z2. Thus, the width-decreasing area H and the substrate zone Z2 partially overlap. In the embodiment of FIG. 14 , the width-decreasing area H and the substrate zone Z2 overlap between the constant width area F and the rear end 56 of the substrate holder 50.

[0131] Furthermore, within the substrate zone Z2, a constant width area F is provided in the direction of the longitudinal center axis X.

[0132] Therefore, a constant width area F is provided in the substrate zone Z2 in the direction of the longitudinal central axis X, and the substrate zone Z2 is longer than the constant width area F in the direction of the longitudinal central axis X.

[0133] Figures 15 and 16 disclose an embodiment corresponding to that of Figures 13 and 14. In the embodiment of Figures 15 and 16, the diverging walls 31 and converging walls 41 are provided as straight or planar walls.

[0134] FIG. 17 discloses an embodiment that is a variation of the embodiment of FIGS.

[0135] The embodiment of FIG. 17 includes a first end constant width area J extending from the first end 24 toward the second end 26 along the longitudinal central axis X. The first end constant width area J is located between the first end 24 and the width increasing area G. The first end constant width area J is defined by the first end parallel sidewall portion 32.

[0136] The first end parallel sidewall portion 32 extends parallel to the longitudinal center axis X.

[0137] 17, the gas inlet 30 is disposed in the first end constant width area J. This allows the distance between the gas inlet 30 and the substrate holder 50 or the front end 54 to be increased.

[0138] The first end constant width area J is provided in the supply zone Z1 of the reaction chamber 20.

[0139] The substrate zone Z2 and the width-increasing area G overlap in the direction of the central longitudinal axis X. The substrate zone Z2 therefore extends up to the width-increasing area G.

[0140] The embodiment of FIG. 17 further includes a second end constant width area K extending from second end 26 toward first end 24 in the direction of longitudinal central axis X. Second end constant width area K is provided between second end 25 and width-reducing area H. Second end constant width area K is defined by second end parallel sidewall portion 42.

[0141] The second end parallel sidewall portion 42 extends parallel to the longitudinal center axis X.

[0142] 17, the gas outlet 40 is arranged in the second end constant width area K. This allows the distance between the gas outlet 40 and the substrate holder 50 or the rear end 56 to be increased.

[0143] The second end constant width area K is provided in the discharge zone Z3 of the reaction chamber 20.

[0144] The substrate zone Z2 and the width-reduced area H overlap in the direction of the longitudinal central axis X. The substrate zone Z2 therefore extends up to the width-reduced area H.

[0145] The constant width area F is located between the increasing width area G and the decreasing width area H within the substrate zone Z2.

[0146] Figure 18 shows a variation of the embodiment of Figures 3 to 6. The reaction chamber 20 is provided with a supply flow guide 60 located in the supply zone Z1. The supply flow guide 60 is positioned to guide gas flow from the gas inlet 30 to flow path A and flow path B.

[0147] The supply flow guide 60 is arranged in the width increasing area G.

[0148] The supply flow guide 60 is disposed so as to be substantially parallel to the branch wall portion 31. At least one supply flow guide 60 is present on the opposite side of the longitudinal center axis X.

[0149] The reaction chamber 20 further includes a discharge flow guide 62 disposed in the discharge zone Z3. The discharge flow guide 62 is positioned to guide the gas flows from the flow paths A and B to the gas outlet 40.

[0150] The discharge flow guide 62 is disposed in the reduced width area H.

[0151] The discharge flow guides 62 are arranged to be substantially parallel to the converging converging wall portions 41. At least one discharge flow guide 62 is located on the opposite side of the central longitudinal axis X.

[0152] Figure 19 shows a further variation on the embodiment of Figures 3 to 6. Reaction chamber 20 is provided with supply flow guide 60 arranged to extend from supply zone Z1 to substrate zone Z2. Supply flow guide 60 is arranged to guide gas flow from gas inlet 30 to flow path A and flow path B.

[0153] The supply flow guide 60 is arranged in the width increasing area G.

[0154] The supply flow guide 60 is disposed so as to be substantially parallel to the branch wall portion 31. At least one supply flow guide 60 is present on the opposite side of the longitudinal central axis X.

[0155] The reaction chamber 20 further includes a discharge flow guide 62 extending from the discharge zone Z3 to the substrate zone Z2. The discharge flow guide 62 is positioned to guide the gas flows from flow path A and flow path B to the gas outlet 40.

[0156] The discharge flow guide 62 is disposed in the reduced width area H.

[0157] The discharge flow guides 62 are arranged to be substantially parallel to the converging converging wall portions 41. At least one discharge flow guide 62 is located on the opposite side of the central longitudinal axis X.

[0158] In some embodiments, the discharge flow guide 62 may be omitted and only the supply flow guide 60 is present.

[0159] The supply flow guide 60 and the discharge flow guide 62 are plate-shaped or vane-shaped.

[0160] Figure 20 shows a variation of the embodiment of Figures 13 and 14. In the embodiment of Figure 20, the reaction chamber 20 has a generally oval or oval-like shape.

[0161] Within reaction chamber 20 is a longitudinal substrate holder 50 positioned between first end 24 and second end 26, more specifically between gas inlet 30 and gas outlet 40. Substrate holder 50 is positioned to hold one or more substrates, particularly circular substrates, during processing.

[0162] The longitudinal substrate holder 50 is arranged to hold or support two or more substrates, such as circular substrates, in succession or series between the gas inlet 30 and the gas outlet 40. The successive substrates are arranged at the same level or height from the bottom wall 23 of the reaction chamber 20. The longitudinal substrate holder 50 may also be configured to hold or support two or more substrates on top of each other, as shown in Figures 7 and 8.

[0163] A longitudinal substrate holder 50 is disposed between the first end 24 and the second end 26 and between the gas inlet 30 and the gas outlet 40 .

[0164] Preferably, the longitudinal substrate holder 50 is positioned centrally within the reaction chamber 20 in a cross section taken along the central longitudinal axis X and central width axis Y.

[0165] The longitudinal substrate holder 50 extends from an area of ​​increasing width G through an area of ​​constant width F to an area of ​​decreasing width H.

[0166] In an alternative embodiment, the constant width area F may be omitted and the longitudinal substrate holder 50 extends from the area of ​​increasing width G to the area of ​​decreasing width H.

[0167] Although the present invention has been described with reference to the illustrated embodiments, it is to be understood that the invention is not limited to these examples but can be modified within the scope of the claims.

Claims

1. a first end (24), a second end (26) opposite the first end (24), and a longitudinal central axis (X) extending between the first end (24) and the second end (26), and having a length (L) between the first end (24) and the second end (26) along the longitudinal central axis (X); the reaction chamber (20) has a first sidewall (27) extending between a first end (24) and a second end (26), and a second sidewall (28) opposite the first sidewall (27) and extending between the first end (24) and the second end (26), the first sidewall (27) and the second sidewall (28) defining a width (W) of the reaction chamber (20) between the first end (24) and the second end (26), and the reaction chamber (20) has a width central axis (Y) extending perpendicular to the longitudinal central axis (X) between the first sidewall (27) and the second sidewall (28); a gas inlet (30) for supplying gas into the reaction chamber (20); a gas outlet (40) for discharging gas from the reaction chamber (20); 1. An atomic layer deposition reaction chamber (20), wherein the gas inlet (30) and the gas outlet (40) are spaced apart along a central longitudinal axis (X) of the reaction chamber (20), The reaction chamber (20) has a width (W) that increases along a central longitudinal axis (X) from the first end (24) toward a central width axis (Y); The reaction chamber (20) has a width (W) along a central longitudinal axis (X) that decreases in a direction from a central width axis (Y) toward the second end (26); The length (L) of the reaction chamber (20) is greater than the width (W) of the reaction chamber (20) along the central width axis (Y); The reaction chamber (20) has a constant width (W) along the central longitudinal axis (X) in a direction from the central width axis (Y) toward the first end (24) and in a direction from the central width axis (Y) toward the second end (26); The reaction chamber (20) comprises a substrate holder (50) disposed within the reaction chamber (20) between a first end (24) and a second end (26) and between a gas inlet (30) and a gas outlet (40); The substrate holder (50) is arranged to extend in the direction of the longitudinal central axis (X) from the increasing width area (G) through the constant width area (F) to the decreasing width area (H); An atomic layer deposition reaction chamber (20).

2. 2. The atomic layer deposition reaction chamber (20) of claim 1, comprising: the reaction chamber (20) has a width (W) that increases along a central longitudinal axis (X) in a direction from the first end (24) toward the central width axis (Y); the reaction chamber (20) has a width (W) that decreases along the central longitudinal axis (X) in a direction from the central width axis (Y) toward the second end (26); The reaction chamber (20) comprises an area of ​​increasing width (G) disposed between the first end (24) and a central width axis (Y), the area of ​​increasing width (G) having a width (W) that increases along the central longitudinal axis (X) in a direction from the first end (24) toward the central width axis (Y); The reaction chamber (20) comprises a width-reducing area (H) disposed between the width central axis (Y) and the second end (26), the width-reducing area (H) having a width (W) that decreases along the longitudinal central axis (X) in a direction from the width central axis (Y) toward the second end (26); The reaction chamber (20) comprises a constant width area (F) disposed between an increasing width area (G) and a decreasing width area (H). An atomic layer deposition reaction chamber (20).

3. 2. The atomic layer deposition reaction chamber (20) of claim 1, wherein the reaction chamber (20) comprises a bottom wall (23), a top wall (25), first and second side walls (27, 28), and first and second ends (24, 26), the first and second side walls (27, 28) and the first and second ends (24, 26) extending between the bottom wall (123) and the top wall (25), A gas inlet (30) and a gas outlet (40) are provided in the bottom wall (23); or a gas inlet (30) provided in the bottom wall (23) near the first end (24) and a gas outlet (40) provided in the bottom wall (23) near the second end (26); or A gas inlet (30) is provided at the first end (24) and a gas outlet (40) is provided at the second end (26); An atomic layer deposition reaction chamber (20).

4. a vacuum chamber (90); a reaction chamber (20) disposed within the vacuum chamber (90); The reaction chamber (20) comprises: The device has a first end (24), a second end (26) opposite the first end (24), and a longitudinal central axis (X) extending between the first end (24) and the second end (26), and the distance between the first end (24) and the second end (26) on the longitudinal central axis (X) is a length (L); The container has a first side wall (27) and a second side wall (28) extending between a first end (24) and a second end (26), and a width central axis (Y) extending perpendicular to a longitudinal central axis (X) between the first and second side walls (27, 28), wherein the width (W) is the distance between the first and second side walls (27, 28) along the width central axis (Y); a gas inlet (30) for supplying gas to the reaction chamber (20); a gas outlet (40) for discharging gas from the reaction chamber (20); The gas inlet (30) and the gas outlet (40) are spaced apart on opposite sides of the central longitudinal axis (X) from the central width axis (Y); An atomic layer deposition reactor (10), comprising: the first and second side walls (27, 28) of the reaction chamber (20) are arranged to define a width (W) that increases along the central longitudinal axis (X) at the central width axis (Y) from the gas inlet (30) and a width (W) that decreases along the central longitudinal axis (X) in a direction from the central width axis (Y) toward the gas outlet (40); The length (L) of the reaction chamber (20) is greater than the width (W) of the reaction chamber (20) along the central width axis (Y); The reaction chamber (20) has a constant width (W) along the central longitudinal axis (X) in a direction from the central width axis (Y) toward the gas inlet (30) and in a direction from the central width axis (Y) toward the gas outlet (40); The reaction chamber (20) comprises a substrate holder (50) disposed within the reaction chamber (20) between a first end (24) and a second end (26) and between a gas inlet (30) and a gas outlet (40); The substrate holder (50) is arranged to extend in the direction of the longitudinal central axis (X) from the increasing width area (G) through the constant width area (F) to the decreasing width area (H); Atomic Layer Deposition Reactor (10).

5. 5. An atomic layer deposition reactor (10) according to claim 4, comprising: The reactor (10) comprises: at least one gas inlet connection (110) extending from outside the vacuum chamber (90) to the reaction chamber (20) and connected to a gas inlet (30) for supplying gas from outside the vacuum chamber (90) to the reaction chamber (20); and at least one gas outlet connection (210) extending from outside the vacuum chamber (90) to the reaction chamber (20) and connected to a gas outlet (40) for discharging gas from the reaction chamber (20) to outside the vacuum chamber (90). Atomic Layer Deposition Reactor (10).

6. 5. An atomic layer deposition reactor (10) according to claim 4, comprising: the reaction chamber (20) has a width (W) that increases along a central longitudinal axis (X) in a direction from the gas inlet (30) toward the central width axis (Y); The reaction chamber (20) has a width (W) that decreases along the central longitudinal axis (X) in a direction from the central width axis (Y) toward the gas outlet (40). Atomic Layer Deposition Reactor (10).

7. An atomic layer deposition reactor (10) according to any one of claims 4 to 6, comprising: Equipped with an atomic layer deposition reaction chamber (20) according to claim 1 or 2, Atomic Layer Deposition Reactor (10).

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