Electronic component mounting device and electronic component mounting method
The electronic component mounting apparatus enhances gas purging efficiency by using a cover to form a semi-enclosed space for purge gas supply, expelling air through the gap between the substrate and cover, addressing inefficiencies and heat loss in flip-chip bonding.
Patent Information
- Application Number
- JP2024510851
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2022-03-30
- Publication Date
- 2026-01-15
- Estimated Expiration
- 2042-03-30
AI Technical Summary
Existing electronic component mounting methods using flip-chip bonding suffer from reduced gas purging efficiency due to air entrainment in the vortex of purge gas between the chip and the substrate, leading to inefficiencies and heat loss during bonding.
An electronic component mounting apparatus with a bonding head that includes a cover surrounding the holding tool, providing a semi-enclosed space for purge gas supply around the entire periphery, expelling air through the gap between the substrate and cover, and isotropic gas supply to enhance purging efficiency.
Improves gas purging efficiency by preventing air entrainment and reducing purge gas flow rate, thereby minimizing heat loss during the bonding process.
Smart Images

Figure 0007799254000001 
Figure 0007799254000002 
Figure 0007799254000003
Abstract
Description
[Technical Field]
[0001] The present invention relates to an electronic component mounting apparatus and an electronic component mounting method. [Background technology]
[0002] In a mounting device for electronic components using a flip-chip bonding method, it is required to suppress deterioration due to oxidation of solder when mounting electronic components on a substrate.
[0003] For example, Patent Document 1 discloses a chip mounting method characterized by, when bonding bumps formed on a chip to pads formed on a substrate, keeping the space between the chip and the substrate open, locally flowing purge gas toward at least the area surrounding the bumps, and bonding the bumps to the pads in the purge gas atmosphere. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-257238 Summary of the Invention [Problem to be solved by the invention]
[0005] However, according to the chip mounting method described in Patent Document 1, the purge gas is blown out from one or two directions, which can cause air to be caught in the vortex of the purge gas generated between the chip and the substrate, reducing the efficiency of gas purging.
[0006] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electronic component mounting apparatus and an electronic component mounting method with improved gas purging efficiency. [Means for solving the problem]
[0007] An electronic component mounting device according to one aspect of the present invention includes a bonding head that holds an electronic component having a mounting surface and mounts it on a substrate, the bonding head comprising a holding tool having a holding area that holds the electronic component, a cover that surrounds the periphery of the holding tool and has an opening that opens to the side of the holding area, and a gas outlet that supplies purge gas to the inside of the cover, and a purge gas supply path is provided around the entire periphery of the holding area between the cover and the holding tool.
[0008] According to this aspect, when the electronic component and the substrate are bonded, a semi-enclosed space surrounding the electronic component is formed between the substrate and the cover. By supplying purge gas to the semi-enclosed space, air remaining in the semi-enclosed space is expelled through the gap between the substrate and the cover, increasing the purge gas concentration in the semi-enclosed space. At this time, the purge gas is isotropically supplied to the mounting surface of the electronic component from the surroundings via a purge gas supply path provided around the entire circumference of the holding area between the cover and the holding tool. Therefore, compared to a configuration in which purge gas is supplied only from a specific direction to the mounting surface, it is possible to prevent air entrained in the purge gas from remaining around the mounting surface, thereby improving gas purging efficiency. This allows the flow rate of the purge gas to be reduced, thereby suppressing heat loss caused by the purge gas absorbing heat during bonding of the electronic component and the substrate.
[0009] In the above aspect, the cover may have a tip that protrudes beyond the holding area of the holding tool.
[0010] According to this aspect, the semi-enclosed space formed between the substrate and the cover is more airtight, and the gas purging efficiency can be further improved.
[0011] In the above aspect, the inner diameter of the tip portion of the cover may be smaller than the inner diameter of the periphery of the holding region of the cover.
[0012] According to this aspect, the flow direction of the purge gas can be directed toward the mounting surface, and the gas purge efficiency can be further improved.
[0013] In the above aspect, the tip of the cover may be made of a flexible material.
[0014] According to this aspect, even if the tip of the cover comes into contact with the substrate or electronic components mounted on the substrate, damage to the substrate or electronic components mounted on the substrate can be prevented, thereby reducing the occurrence of defective products. Therefore, the cover can be brought close to the substrate without avoiding contact of the tip of the cover with the substrate or electronic components mounted on the substrate, thereby improving the hermeticity of the semi-enclosed space surrounding the electronic components formed between the substrate and the cover when the electronic components are joined to the substrate. Therefore, the amount of purge gas flowing out of the semi-enclosed space after gas purging can be reduced, and the flow rate of purge gas continuously supplied after gas purging can be reduced.
[0015] In the above aspect, a slit or a vent hole may be formed at the tip of the cover.
[0016] According to this aspect, air remaining in the semi-enclosed space surrounding the electronic component, which is formed between the substrate and the cover when the electronic component and the substrate are joined, can be discharged through the slits or the vent holes. In addition, the airtightness of the semi-enclosed space can be adjusted by the design of the slits or the vent holes.
[0017] In the above aspect, the cover may be configured to be movable forward and backward relative to the holding tool in the axial direction of the cover.
[0018] According to this aspect, the hermeticity of the semi-enclosed space surrounding the electronic component formed between the substrate and the cover can be adjusted according to the progress of the gas purge. For example, at the beginning of the gas purge, the gap between the substrate and the cover can be widened to promote air discharge and accelerate the progress of the gas purge. At the end of the gas purge, the gap between the substrate and the cover can be narrowed to suppress the outflow of the purge gas, thereby reducing the flow rate of the purge gas and suppressing heat loss. Furthermore, by starting the supply of purge gas while the cover is advanced relative to the holding area of the holding tool before contacting the electronic component with the substrate, a semi-enclosed space can be formed between the cover and the substrate with a high purge gas concentration around the electronic component, thereby shortening the time required for gas purge. At the stage of contacting the electronic component with the substrate, the cover can be retracted relative to the holding area of the holding tool to suppress contact between the substrate and the cover. At the stage of forming the semi-enclosed space between the substrate and the cover, the position of the cover can be adjusted according to the surface shape of the substrate and the mounting status of the electronic component.
[0019] Another aspect of the present invention is an electronic component mounting method in which an electronic component having a mounting surface is held by a bonding head and mounted on a substrate, the bonding head comprising a holding tool having a holding area for holding the electronic component, a cover surrounding the periphery of the holding tool and having an opening formed on the side of the holding area, and a gas outlet for supplying purge gas to the inside of the cover, and the electronic component mounting method includes holding the electronic component by the holding tool, supplying purge gas to a purge gas supply path provided around the entire circumference of the holding area between the holding tool holding the electronic component and the cover by ejecting purge gas from the gas outlet, and mounting the electronic component held by the holding tool on a substrate while the purge gas is supplied.
[0020] According to this aspect, when the electronic component and the substrate are bonded, a semi-enclosed space surrounding the electronic component is formed between the substrate and the cover. By supplying purge gas to the semi-enclosed space, air remaining in the semi-enclosed space is expelled through the gap between the substrate and the cover, increasing the purge gas concentration in the semi-enclosed space. At this time, the purge gas is isotropically supplied to the mounting surface of the electronic component from the surroundings via a purge gas supply path provided around the entire circumference of the holding area between the cover and the holding tool. Therefore, compared to a configuration in which purge gas is supplied only from a specific direction to the mounting surface, it is possible to prevent air entrained in the purge gas from remaining around the mounting surface, thereby improving gas purging efficiency. This allows the flow rate of the purge gas to be reduced, thereby suppressing heat loss caused by the purge gas absorbing heat during bonding of the electronic component and the substrate. [Effects of the Invention]
[0021] According to the present invention, it is possible to provide an electronic component mounting apparatus and an electronic component mounting method with improved gas purging efficiency. [Brief explanation of the drawings]
[0022] [Figure 1] 1 is a diagram schematically showing the configuration of an electronic component mounting apparatus according to a first embodiment. [Figure 2] 2 is a diagram schematically showing a cross-sectional configuration of the electronic component mounting device shown in FIG. 1 taken along line II-II. [Figure 3] 3 is a flowchart schematically showing an electronic component mounting method using the electronic component mounting apparatus according to the first embodiment. [Figure 4] FIG. 4 is a diagram schematically illustrating step S120 in FIG. 3. [Figure 5] FIG. 4 is a diagram schematically illustrating step S130 in FIG. 3. [Figure 6] FIG. 4 is a diagram schematically illustrating step S140 in FIG. 3. [Figure 7] FIG. 4 is a diagram schematically illustrating step S150 in FIG. 3. [Figure 8]FIG. 10 is a diagram schematically showing the configuration of a bonding head according to a second embodiment. [Figure 9] FIG. 10 is a diagram schematically showing the configuration of a bonding head according to a third embodiment. [Figure 10] FIG. 10 is a diagram schematically showing the configuration of a bonding head according to a fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION
[0023] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The drawings of the present embodiment are merely examples, and the dimensions and shapes of each part are schematic, so the technical scope of the present invention should not be interpreted as being limited to the embodiment.
[0024] First Embodiment First, the configuration of an electronic component mounting device 1 according to a first embodiment of the present invention will be described with reference to Figures 1 and 2. Figure 1 is a diagram schematically showing the configuration of the electronic component mounting device according to the first embodiment. Figure 2 is a diagram schematically showing the cross-sectional configuration of the electronic component mounting device shown in Figure 1, taken along line II-II.
[0025] The electronic component mounting apparatus 1 is a flip-chip bonder that inverts and mounts a semiconductor chip EC on a substrate S. The semiconductor chip EC is an example of an electronic component, but is not limited thereto. The electronic component mounting apparatus 1 is not limited to a flip-chip bonder, and may also be a die bonder or a surface mounting apparatus. The electronic components mounted by the electronic component mounting apparatus 1 may be semiconductor elements such as IC packages, transistors, and diodes, or passive elements such as resistors, capacitors, and inductors. Solder that joins the substrate S and the semiconductor chip EC is provided, for example, on the bump electrodes B of the semiconductor chip EC. The solder may be provided on the electrode pads PD of the substrate S, or on both the bump electrodes B and the electrode pads PD. The electronic component mounting apparatus 1 includes a head unit 100, a control unit 10, a pickup unit 20, a transfer unit 30, and a mounting unit 40.
[0026] The head unit 100 includes a bonding head 110 and a head moving mechanism 150 .
[0027] The bonding head 110 is configured to be able to pick up a semiconductor chip EC having bump electrodes B on its mounting surface. The bonding head 110 has a holding tool 111, a heating tool 113, a cooling tool 115, a cover C1, a gas outlet P1, and a lifting mechanism 119.
[0028] The holding tool 111 holds the semiconductor chip EC. The holding tool 111 is, for example, a suction collet having suction holes 112. The holding tool 111 has a holding area 111A for holding the semiconductor chip EC, and is configured to be able to pick up the semiconductor chip EC that has come into contact with the holding area 111A.
[0029] The heating tool 113 is a heating mechanism, such as a ceramic heater, that heats the holding tool 111. The heating tool 113 is configured to be able to heat the holding area 111A of the holding tool 111 in particular and heat the semiconductor chip EC held in the holding area 111A. The heating tool 113 may be provided with a temperature sensor such as a thermocouple or a resistance temperature detector.
[0030] The cooling tool 115 is a cooling mechanism that cools the holding tool 111, and is, for example, a cooling flow path, a Peltier element, etc. The cooling tool 115 particularly reduces the temperature of the holding region 111A of the holding tool 111.
[0031] The cover C1 is provided in a cylindrical shape surrounding the periphery of the holding tool 111. When the holding area 111A of the holding tool 111 is viewed from above as shown in FIG. 2, a purge gas supply path R1 is formed between the cover C1 and the holding tool 111 along the entire periphery of the holding area 111A. For example, an isotropic gap is provided between the cover C1 and the holding tool 111. The cover C1 has an opening that opens to the holding area 111A side of the holding tool 111. That is, the cover C1 opens to the side of the bump electrodes B of the semiconductor chip EC held by the holding tool 111. The side of the cover C1 opposite to the opening is closed. The cover C1 may be provided with at least one of a slit and a vent hole for discharging gas.
[0032] The cover C1 has a tip C11 on the opening side. The tip C11 protrudes beyond the holding area 111A of the holding tool 111. The tip C11 surrounds, for example, the bump electrodes B of the semiconductor chip EC held by the holding tool 111. Alternatively, the bump electrodes B of the semiconductor chip EC held by the holding tool 111 may protrude beyond the tip C11.
[0033] The gas outlet P1 supplies a purge gas GS to the inside of the cover C1. For example, the gas outlet P1 ejects the purge gas GS toward the purge gas supply path R1. The purge gas GS may be an inert gas such as nitrogen gas or argon gas, a reducing gas, or a substitution gas (for example, a gas that can be substituted with a fluorine group on the surface of the bump electrode B). In short, the purge gas GS may be any gas that can purge a gas that forms an oxidizing atmosphere, such as air, and form a non-oxidizing atmosphere.
[0034] The lifting mechanism 119 is a lifting mechanism that raises and lowers the holding tool 111 in a direction perpendicular to the transfer surface of the transfer unit 30 or the mounting surface of the mounting unit 40 (hereinafter referred to as the "vertical direction"), and is, for example, an electric cylinder or an actuator. The lifting mechanism 119 raises and lowers the cover C1 in the vertical direction together with the holding tool 111. In the example shown in FIG. 1, the relative position of the cover C1 with respect to the holding area 111A of the holding tool 111 is fixed. Alternatively, as will be described later, the holding tool 111 and the cover C1 may be configured to be able to raise and lower independently of each other. In other words, the relative position of the cover C1 with respect to the holding area 111A of the holding tool 111 may be configured to be changeable.
[0035] The head moving mechanism 150 is a moving mechanism that moves the head unit 100 along a direction parallel to the transfer surface of the transfer unit 30 or the mounting surface of the mounting unit 40 (hereinafter referred to as the "horizontal direction"), and is, for example, a Cartesian robot or a robot manipulator.
[0036] The control unit 10 controls the lifting mechanism 119 and the head moving mechanism 150 to control the vertical and horizontal positions of the holding tool 111 of the bonding head 110. The control unit 10 also controls the suction holes 112 of the holding tool 111 to pick up or release the semiconductor chip EC. The control unit 10 also controls the heating tool 113 and cooling tool 115 of the holding tool 111 to adjust the temperature of the semiconductor chip EC via the holding area 111A. The control unit 10 also controls the gas outlet P1 of the holding tool 111 to start and stop the supply of the purge gas GS and adjust the supply amount.
[0037] Specifically, the control unit 10 picks up the semiconductor chip EC from the pickup unit 20 and transports the semiconductor chip EC from the pickup unit 20 to the transfer unit 30. Next, the control unit 10 immerses the bump electrodes B of the semiconductor chip EC in the flux FX stored in the transfer unit 30 and transports the semiconductor chip EC from the transfer unit 30 to the mounting unit 40. Next, the control unit 10 starts supplying a purge gas GS, brings the bump electrodes B of the semiconductor chip EC into contact with the electrode pads PD of the substrate S, and then heats and mounts the semiconductor chip EC on the substrate S. At this time, to suppress heat loss due to the flowing purge gas GS, the control unit 10 may change the supply amount of the purge gas GS before and after bringing the bump electrodes B into contact with the electrode pads PD. Specifically, the supply amount of the purge gas GS after bringing the bump electrodes B into contact with the electrode pads PD may be reduced compared to the supply amount of the purge gas GS before bringing the bump electrodes B into contact with the electrode pads PD. When the mounting of the semiconductor chip EC onto the substrate S is completed, the control unit 10 moves the bonding head 110 to the pickup unit 20 while cooling the holding tool 111, and starts preparations for mounting the next semiconductor chip EC.
[0038] The control unit 10 may acquire information regarding the operating status of at least one of the pickup unit 20, the transfer unit 30, and the mounting unit 40, and control the head unit 100 based on the information. The control unit 10 may also control at least one of the pickup unit 20, the transfer unit 30, and the mounting unit 40 based on the operating status of the head unit 100.
[0039] The pickup unit 20 picks up semiconductor chips EC from the wafer W. Specifically, the pickup unit 20 pushes up the semiconductor chips EC from the wafer W using a push-up mechanism 21, and then picks up the pushed-up semiconductor chips EC using a pickup head 22. The picked-up semiconductor chips EC are inverted by the pickup head 22 and then transferred to the bonding head 110. Note that the pickup unit is not limited to the above and may be a tray feeder that supplies electronic components such as semiconductor chips EC from a tray containing the semiconductor chips EC. In this case, the pickup unit may further include a holder that holds the tray, a conveyor that transports the tray, a Cartesian robot or a robot manipulator, etc. The pickup unit may also be, for example, a tape feeder.
[0040] In the transfer unit 30, the flux FX is transferred to the bump electrodes B of the semiconductor chip EC. The transfer unit 30 includes a transfer stage 31 that stores the flux FX. The flux FX is stored at a uniform depth in an immersion area 33 of the transfer stage 31. The transfer unit 30 may further include a flux pod that supplies the flux FX to the immersion area 33, a squeegee that smooths the surface of the flux FX in the immersion area 33, a temperature adjustment mechanism that adjusts the temperature of the flux FX, and an image analyzer that images the surface of the flux FX in the immersion area 33 before or after the transfer process and analyzes the transfer status of the flux FX to the bump electrodes B.
[0041] In the mounting unit 40, the semiconductor chips EC are mounted on the substrate S. The mounting unit 40 includes a mounting stage 41 on which the substrate S is placed. The mounting unit 40 may further include a temperature adjustment mechanism that adjusts the temperature of the substrate S to melt the solder, a conveyor that transports the substrate S, a Cartesian robot or a robot manipulator, and the like.
[0042] Next, an overview of an electronic component mounting method using the electronic component mounting apparatus 1 will be described with reference to FIGS. 3 to 7. FIG. 3 is a flowchart that schematically shows an electronic component mounting method using the electronic component mounting apparatus according to the first embodiment. FIG. 4 is a diagram that schematically shows step S120 in FIG. 3. FIG. 5 is a diagram that schematically shows step S130 in FIG. 3. FIG. 6 is a diagram that schematically shows step S140 in FIG. 3. FIG. 7 is a diagram that schematically shows step S150 in FIG. 3. In the following description, it is the control unit 10 that controls each component of the head unit 100.
[0043] First, the temperature of the bonding head 110 is controlled to a first temperature (S110). The temperature of the bonding head 110 is the temperature of the holding tool 111 controlled using the heating tool 113 or the cooling tool 115, and is the set temperature when heating or cooling the semiconductor chip EC via the holding area 111A. The first temperature is set lower than the melting point of the solder. The first temperature may also be set lower than the activation temperature of the flux FX. From the viewpoint of shortening the time required to melt the solder in step S170 (described later), the first temperature is desirably set as high as possible within a temperature range below the melting point of the solder and that does not vaporize or degrade the flux FX stored on the transfer stage 31 in step S130 (described later). The time during which the holding tool 111 holding the semiconductor chip EC approaches the transfer stage 31 to transfer the flux FX to the bump electrodes B is shorter than the time required for the flux FX on the transfer stage 31 to heat up to the first temperature. Therefore, the first temperature may be set higher than the activation temperature of the flux FX. The first temperature is preferably set to a temperature between 100° C. and 250° C., and more preferably set to a temperature of 150° C. or higher. As an example, the first temperature is about 200° C.
[0044] Next, the semiconductor chip EC is picked up from the wafer W, inverted, and handed over to the bonding head (S120). The push-up mechanism 21 pushes the semiconductor chip EC up from the resting wafer W toward the pickup head 22. At this time, the bump electrodes B of the semiconductor chip EC face upward. The pickup head 22 holds the semiconductor chip EC and inverts it to change the up-down orientation of the semiconductor chip EC. At this time, the bump electrodes B of the semiconductor chip EC face downward. As shown in FIG. 4, the head moving mechanism 150 is controlled to move the bonding head 110 horizontally to a position where it overlaps the semiconductor chip EC held by the pickup head 22 in the vertical direction. Next, the lifting mechanism 119 is controlled to lower the holding tool 111 and cover C1 vertically downward, bringing the holding area 111A into contact with the semiconductor chip EC. Next, the suction holes 112 are controlled to suction the semiconductor chip EC to the holding area 111A. Thereafter, the lifting mechanism 119 is controlled to lift the holding tool 111 and the cover C1 vertically upward while still holding the semiconductor chip EC.
[0045] Next, the flux FX is transferred to the bump electrodes B (S130). First, the head moving mechanism 150 is controlled to move the bonding head 110 horizontally to a position where it overlaps the immersion area 33 in the vertical direction. Next, as shown in FIG. 5, the lifting mechanism 119 is controlled to lower the holding tool 111 and cover C1 vertically downward, so that the bump electrodes B of the semiconductor chip EC are immersed in the flux FX. Next, the lifting mechanism 119 is controlled to raise the holding tool 111 and cover C1 vertically upward.
[0046] Next, the supply of purge gas GS is started (S140). First, the head moving mechanism 150 is controlled to move the bonding head 110 horizontally to a position vertically overlapping the planned mounting area of the substrate S. Next, as shown in FIG. 6, the purge gas GS ejected from the gas ejection port P1 fills the space inside the cover C1 and purges the oxidizing gas from the space through the purge gas supply path R1. Excess purge gas GS is also exhausted through the purge gas supply path R1, thereby suppressing the intrusion of the oxidizing gas into the space inside the cover C1. Note that the supply of purge gas GS may be started before or during the movement of the bonding head 110 vertically to a position vertically overlapping the planned mounting area of the substrate S.
[0047] Next, the bump electrodes B are brought into contact with the electrode pads PD (S150). The lifting mechanism 119 is controlled to lower the holding tool 111 and the cover C1 vertically downward, bringing the bump electrodes B into contact with the electrode pads PD. At this time, as shown in FIG. 7, a semi-enclosed space surrounding the semiconductor chip EC is formed between the substrate S and the cover C1. The gas outlet P1 continues to supply the purge gas GS, and the oxidizing gas remaining in the semi-enclosed space is discharged from the gap between the substrate S and the cover C1. As a result, a non-oxidizing atmosphere consisting of the purge gas GS is formed around the bump electrodes B.
[0048] Note that step S140 of starting the supply of the purge gas GS may be performed after step S150 of bringing the bump electrodes B into contact with the electrode pads PD.
[0049] Next, the temperature of the bonding head 110 is controlled to a second temperature (S150). The second temperature is higher than the first temperature. The second temperature is set higher than the melting point of the solder. This allows the solder to soften in a non-oxidizing atmosphere made of the purge gas GS. The second temperature is set appropriately within a temperature range in which the solder does not deteriorate. The second temperature is preferably set to a temperature between 250°C and 400°C, and more preferably to a temperature below 350°C. As an example, the second temperature is about 300°C.
[0050] Next, the bonding head 110 is cooled (S170). By lowering the temperature of the bonding head 110 below the melting point of the solder, the solder is cooled and solidified. In this way, the semiconductor chip EC is soldered to the substrate S.
[0051] Next, the semiconductor chip EC is released from the holding tool 111 (S180). First, the suction through the suction holes 112 is released to release the semiconductor chip EC from the holding area 111A. Next, the lifting mechanism 119 is controlled to lift the holding tool 111 and the cover C1 vertically upward.
[0052] Thereafter, the process returns to step S110, and the temperature of the bonding head 110 is controlled to the first temperature. Then, before step S130 is performed again, flux FX is added to the immersion area 33 of the transfer stage 31, and the surface of the flux FX supplied to the immersion area 33 is smoothed by the squeegee.
[0053] As described above, in the electronic component mounting apparatus 1 of this embodiment, the bonding head 110 comprises a holding tool 111 having a holding area 111A for holding a semiconductor chip EC, a cover C1 that surrounds the periphery of the holding tool 111 and has an opening that opens to the side of the holding area 111A, and a gas outlet P1 that supplies purge gas GS to the inside of the cover C1, and a purge gas supply path R1 is provided around the entire circumference of the holding area 111A between the cover C1 and the holding tool 111.
[0054] According to this configuration, when the semiconductor chip EC and the substrate S are bonded together, a semi-enclosed space is formed between the substrate S and the cover C1, surrounding the semiconductor chip EC. By supplying purge gas GS to the semi-enclosed space, air remaining in the semi-enclosed space is expelled through the gap between the substrate S and the cover C1, increasing the concentration of purge gas GS in the semi-enclosed space. At this time, the purge gas GS is isotropically supplied from the surroundings to the mounting surface of the semiconductor chip EC via a purge gas supply path R1 provided around the entire periphery of the holding area 111A between the cover C1 and the holding tool 111. Therefore, compared to a configuration in which purge gas GS is supplied only from a specific direction to the mounting surface, air entrained in the purge gas GS is prevented from remaining around the mounting surface, improving gas purging efficiency. Therefore, the flow rate of the purge gas GS can be reduced, thereby suppressing heat loss caused by the purge gas GS absorbing heat during bonding between the semiconductor chip EC and the substrate S.
[0055] In one embodiment, the cover C1 has a tip C11 that protrudes beyond the holding area 111A of the holding tool 111.
[0056] This increases the airtightness of the semi-enclosed space formed between the substrate S and the cover C1, thereby further improving the gas purge efficiency.
[0057] In addition, the electronic component mounting method using the electronic component mounting apparatus 1 includes holding a semiconductor chip EC by a holding tool 111, supplying purge gas GS to a purge gas supply path R1 provided around the entire circumference of a holding area 111A between the holding tool 111 holding the semiconductor chip EC and the cover C1 by ejecting purge gas GS from a gas outlet P1, and mounting the semiconductor chip EC held by the holding tool 111 on a substrate S while the purge gas GS is being supplied.
[0058] According to this configuration, when the semiconductor chip EC and the substrate S are bonded together, a semi-enclosed space is formed between the substrate S and the cover C1, surrounding the semiconductor chip EC. By supplying purge gas GS to the semi-enclosed space, air remaining in the semi-enclosed space is expelled through the gap between the substrate S and the cover C1, increasing the concentration of purge gas GS in the semi-enclosed space. At this time, the purge gas GS is isotropically supplied from the surroundings to the mounting surface of the semiconductor chip EC via a purge gas supply path R1 provided around the entire periphery of the holding area 111A between the cover C1 and the holding tool 111. Therefore, compared to a configuration in which purge gas GS is supplied only from a specific direction to the mounting surface, air entrained in the purge gas GS is prevented from remaining around the mounting surface, improving gas purging efficiency. Therefore, the flow rate of the purge gas GS can be reduced, thereby suppressing heat loss caused by the purge gas GS absorbing heat during bonding between the semiconductor chip EC and the substrate S.
[0059] Although the gas outlets P1 according to this embodiment are provided facing vertically downward, they may be provided facing vertically upward, horizontally inward, or horizontally outward. There are, for example, two gas outlets P1, but the number may be one, or three or more.
[0060] Other embodiments will be described below. Note that the same or similar components as those in the first embodiment are denoted by the same or similar reference numerals, and their description will be omitted as appropriate. Furthermore, similar effects and advantages resulting from similar components will not be mentioned one after another.
[0061] Second Embodiment The configuration of a bonding head 210 according to the second embodiment will be described with reference to Fig. 8. Fig. 8 is a diagram schematically showing the configuration of a bonding head according to the second embodiment.
[0062] The cover C2 according to the second embodiment is provided so that the horizontal dimension decreases toward the tip, and the inner wall of the tip portion C21 is tapered. The inner diameter of the tip portion C21 of the cover C2 is smaller than the inner diameter of the periphery of the holding area 111A of the cover C2.
[0063] This allows the flow of the purge gas GS to be directed toward the bump electrodes B, further improving the gas purge efficiency.
[0064] The inner wall of the tip of the cover is not limited to being tapered, as long as it is possible to direct the flow of the purge gas GS toward the bump electrode B. The inner wall of the tip of the cover may have a protrusion that protrudes inward, and the tip of the cover may be L-shaped or T-shaped.
[0065] <Third embodiment> The configuration of a bonding head 310 according to the third embodiment will be described with reference to Fig. 9. Fig. 9 is a diagram schematically showing the configuration of a bonding head according to the third embodiment.
[0066] The tip portion C31 of the cover C3 according to the third embodiment is made of flexible rubber. The tip portion C31 is configured to be deformable when it comes into contact with the substrate S or another semiconductor chip EC already mounted on the substrate S. The tip portion C31 is provided with a slit SL extending in the vertical direction. The slit SL is used to exhaust gas and also makes the tip portion C31 more easily deformable.
[0067] As described above, the tip portion C31 of the cover C3 according to this embodiment is made of a flexible material.
[0068] This makes it possible to prevent damage to the substrate S or the semiconductor chip EC mounted on the substrate S even if the tip portion C31 of the cover C3 comes into contact with the substrate S or the semiconductor chip EC already mounted on the substrate S, thereby suppressing the occurrence of defective products. Therefore, the cover C3 can be brought close to the substrate S without avoiding the tip portion C31 of the cover C3 coming into contact with the substrate S or the semiconductor chip EC already mounted on the substrate S, thereby improving the hermeticity of the semi-enclosed space surrounding the semiconductor chip EC formed between the substrate S and the cover C3 when the semiconductor chip EC and the substrate S are bonded. Therefore, it is possible to suppress the amount of purge gas that flows out of the semi-enclosed space after gas purging, and to suppress the flow rate of purge gas that is continuously supplied after gas purging.
[0069] Furthermore, a slit may be formed in the tip portion C31 of the cover C3 according to this embodiment.
[0070] According to this embodiment, it is possible to exhaust air remaining in the semi-enclosed space surrounding the semiconductor chip EC, which is formed between the substrate S and the cover C3 when the semiconductor chip EC is bonded to the substrate S, through the slits SL. In addition, the airtightness of the semi-enclosed space can be adjusted by the design of the slits SL.
[0071] The tip of the cover may have a vent hole instead of a slit. The material of the tip of the cover is not limited to rubber as long as it is flexible. The tip of the cover may be made of sponge such as urethane foam, cloth, or the like.
[0072] <Fourth embodiment> The configuration of a bonding head 410 according to the fourth embodiment will be described with reference to Fig. 10. Fig. 10 is a diagram schematically showing the configuration of the bonding head according to the fourth embodiment.
[0073] The bonding head 410 according to the fourth embodiment includes an elevating mechanism 419 that raises and lowers the holding tool 111 in the vertical direction, and an elevating mechanism 429 that raises and lowers the cover C4 in the vertical direction. The holding tool 111 and the cover C4 can be raised and lowered independently of each other.
[0074] As described above, the cover C4 according to this embodiment is configured to be able to move forward and backward relative to the holding tool 111 in the axial direction of the cover C4.
[0075] This allows the hermeticity of the semi-enclosed space surrounding the semiconductor chip EC formed between the substrate S and the cover C4 to be adjusted according to the progress of the gas purge. For example, at the beginning of the gas purge, the gap between the substrate S and the cover C4 can be widened to promote air discharge and accelerate the progress of the gas purge. At the end of the gas purge, the gap between the substrate S and the cover C4 can be narrowed to suppress the outflow of the purge gas GS, thereby reducing the flow rate of the purge gas GS and suppressing heat loss. Furthermore, by starting the supply of the purge gas GS with the cover C4 advanced relative to the holding area of the holding tool 111 before the semiconductor chip EC and the substrate S are brought into contact with each other, a semi-enclosed space can be formed between the cover C4 and the substrate S with a high concentration of the purge gas GS around the semiconductor chip EC, thereby shortening the time required for the gas purge. At the stage of bringing the semiconductor chip EC and the substrate S into contact with each other, the cover C4 can be retracted relative to the holding area of the holding tool 111 to suppress contact between the substrate S and the cover C4. In the step of forming a semi-closed space between the substrate S and the cover C4, the position of the cover C4 can be adjusted depending on the surface shape of the substrate S and the mounting state of the semiconductor chip EC.
[0076] As described above, according to one aspect of the present invention, it is possible to provide an electronic component mounting apparatus and an electronic component mounting method with improved gas purging efficiency.
[0077] The above-described embodiments are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The elements of the embodiments, as well as their arrangement, materials, conditions, shapes, sizes, etc., are not limited to those illustrated and can be modified as appropriate. Furthermore, configurations shown in different embodiments can be partially substituted or combined with each other. [Explanation of symbols]
[0078] 1...Electronic component mounting device 10...Control unit 100...Head unit 110...Bonding head 111...Holding tool 113...Heating tool 115...Cooling tool 119...Lifting mechanism 150...Head movement mechanism 20...Pickup unit 21...Push-up mechanism 22...Pickup head 30...Transfer unit 31...transcription stage 33...Soaking area 40...Mounting unit 41...Implementation stage C1...Cover C11…Tip P1...Gas outlet R1: Purge gas supply route FX…Flux W...wafer EC...semiconductor chips B...Bump electrode S...Substrate
Claims
1. a bonding head that holds an electronic component having a mounting surface and mounts it on a substrate; The bonding head includes: a holding tool having a holding area for holding the electronic component; a cover that surrounds the holding tool and has an opening that opens to the holding area; a gas outlet for supplying a purge gas to the inside of the cover; Equipped with a purge gas supply path is provided between the cover and the holding tool over the entire periphery of the holding area; the tip of the cover is made of a flexible material; A slit or a vent hole is formed in the tip of the cover. Electronic component mounting equipment.
2. The cover forms a semi-enclosed space between the substrate and the bonding head. The electronic component mounting device according to claim 1 .
3. an inner diameter of the tip portion of the cover is smaller than an inner diameter of the periphery of the holding area of the cover; The electronic component mounting device according to claim 2 .
4. The cover is configured to be movable forward and backward relative to the holding tool in an axial direction of the cover. The electronic component mounting device according to claim 1 .
5. 1. An electronic component mounting method for mounting an electronic component having a mounting surface on a substrate by using a bonding head, comprising: The bonding head includes: a holding tool having a holding area for holding the electronic component; a cover that surrounds the holding tool and has an opening that opens to the holding area; a gas outlet for supplying a purge gas to the inside of the cover; Equipped with the tip of the cover is made of a flexible material; A slit or a vent hole is formed in the tip of the cover, The electronic component mounting method includes: holding the electronic component with the holding tool; supplying the purge gas to a purge gas supply path provided around the entire circumference of the holding area between the holding tool holding the electronic component and the cover by ejecting the purge gas from the gas ejection port; mounting the electronic component held by the holding tool onto the substrate while the purge gas is being supplied; Including, Electronic component mounting method.
Citation Information
Patent Citations
Sielding member for welding underwater stud
JP1988049370A
Bonding method of ic and bonding head
JP1994124980A
Component bonding method and device and dispenser used for it
JP1997223868A
Bonding head with inert gas supply mechanism
JP1998214864A
Anisotropically conductive connection component and manufacturing method therefor
JP2001156114A